CN103674112A - Method for preparing integrated silicon piezoresistive type sensor chip preparing and sensor chip - Google Patents
Method for preparing integrated silicon piezoresistive type sensor chip preparing and sensor chip Download PDFInfo
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- CN103674112A CN103674112A CN201310652636.XA CN201310652636A CN103674112A CN 103674112 A CN103674112 A CN 103674112A CN 201310652636 A CN201310652636 A CN 201310652636A CN 103674112 A CN103674112 A CN 103674112A
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- support frame
- pyrex
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Abstract
The invention provides a method for preparing an integrated silicon piezoresistive type sensor chip and a sensor chip prepared according to the method. According to the method, a pressure sensor and an acceleration sensor are integrated on the same surface of monocrystalline silicon in an integration mode, so that the size of the chip is decreased to the greatest extent.
Description
Technical field
The present invention relates to silicon micromachining technique field, relate to the preparation method of integrated piezoresistive silicon sensor chip, the method can realize the accurate measurement of absolute pressure and acceleration.
Background technology
Along with the submission of China's living standard, automobile is as the daily vehicles, and its recoverable amount improves year by year, and people are also constantly improved to traffic hazard prevention awareness.According to statistics, the traffic hazard occurring on China Expressway has 70% owing to blowing out, to cause, and blow out be generally pressure due to each tire unbalanced due to, so realize, the real-time monitoring of automotive tire pressure is become to an important topic, be also a wide market.By facts have proved, utilize the pressure transducer being arranged on each tire can realize the real-time monitoring to tire pressure, and acceleration sensor module is installed simultaneously, whether check automobile travels, and realizes the automatic operation of Vehicular tyre pressure monitoring system.
Existing tire pressure monitors that it is generally to introduce from chip upper surface that the pressure source adopting with sensor is introduced mode, can cause the pollution of sensor upper surface like this.For example Chinese patent ZL200820041991.8 provides a kind of encapsulating structure of automobile tyre pressure sensor, the encapsulating structure of described automobile tyre pressure sensor comprises pressure sensor chip, digital signal processing unit chip, it also comprises lead frame, the tow sides of described lead frame are respectively arranged with installs island, be positioned at the installation island in described lead frame front to described lead frame inner side depression, described digital signal processing unit chip plastic packaging is in the installation island of described framework reverse side, described pressure sensor chip is installed in the island of the positive described depression of described lead frame and also uses capping involution.
And, if acceleration transducer and pressure transducer on same surface, pressure source can act on acceleration transducer equally, can impact the damping capacity of acceleration transducer, affects acceleration detection result.For avoiding above impact, must encapsulate in a vacuum on degree of will speed up sensor two sides, make chip package process complicated, increase manufacturing cost.So the tire pressure that exploitation pressure source is introduced from chip back monitors to be very necessary with sensor.
Summary of the invention
The preparation method who the object of this invention is to provide integrated piezoresistive silicon sensor chip, the method make pressure transducer and acceleration transducer integration system standby, solved the problem that pressure source is introduced from chip back, realized the accurate measurement of tire pressure and acceleration, meet volume little, can realize the requirement of low-cost volume production.
The preparation method of described integrated piezoresistive silicon sensor chip comprises the following steps:
The method of step 1, employing diffusion, forms voltage dependent resistor (VDR) bar and ohmic contact regions at monocrystalline silicon piece upper surface, then makes surface passivation layer;
The method of step 2, employing wet etching, simultaneously the impulse chamber of mineralization pressure sensor and the mass of acceleration transducer;
The method of step 4, use dry etching, discharges single-axis acceleration sensors chip structure, forms both sides four girder constructions;
Another object of the present invention is to provide the integrated piezoresistive silicon sensor chip that the preparation method of integrated piezoresistive silicon sensor chip prepares.
Integrated piezoresistive silicon sensor chip, makes pressure transducer and acceleration transducer integrated on the same surface of monocrystalline silicon.
Described pressure transducer comprises support frame, the described support frame side of being provided with diaphragm, the voltage dependent resistor (VDR) bar being provided with in square diaphragm border, Pyrex bottom and support frame bottom surface bonding, on bottom, there is manhole, Pyrex upper cover and support frame upper surface bonding, be provided with cavity upper covering.
Described acceleration transducer comprises support frame, described support frame is provided with mass, semi-girder connects support frame and mass, in semi-girder end, be distributed with voltage dependent resistor (VDR) bar, the bottom surface bonding of Pyrex bottom and support frame, the surface of Pyrex bottom has position limiting structure, Pyrex upper cover and support frame upper surface bonding, and Pyrex upper cover has manhole.
Great advantage of the present invention be pressure transducer and acceleration transducer integrated on the same surface of monocrystalline silicon, reduced chip volume.Especially be applicable to tire pressure and monitor use.
Accompanying drawing explanation
Fig. 1 is the cut-open view of integrated piezoresistive silicon sensor chip in the embodiment of the present invention;
Fig. 2 is the front view of integrated piezoresistive silicon sensor chip in the embodiment of the present invention.
In figure, each description of reference numerals is as follows:
1-silicon/glass electrostatic bonding structure; 2-manhole;
3-bottom; 4-back of the body chamber
5-gap; 6-support frame;
7-insulation course; 8-aluminium lamination;
9-vacuum reference cavity; 10-voltage dependent resistor (VDR) bar;
11-square diaphragm; 12-impulse chamber;
13-upper cover; 14-fairlead;
15-heavily doped region; 16-mass;
17-semi-girder; 18-BCB material;
20-through hole.
Embodiment
Provide preferred embodiment of the present invention below, these embodiment unrestricted content of the present invention.
embodiment
Ask for an interview shown in Fig. 1 and Fig. 2, the present embodiment specifically describes the preparation method of integrated piezoresistive silicon sensor chip, and the method comprises the following steps:
1, use the method for thermal oxide, at monocrystalline silicon piece two sides growth silicon dioxide (SiO
2) thin layer;
2, at silicon chip side's diaphragm 11, carry out photoetching with semi-girder 17 design districts, form light boron voltage dependent resistor (VDR) bar diffusion region;
3, etch away the SiO of light boron voltage dependent resistor (VDR) bar diffusion region
2thin layer;
4, use method of diffusion, form light boron voltage dependent resistor (VDR) bar 10;
5, etch away SiO
2thin layer;
6, use the method for thermal oxide, at silicon chip two sides growth SiO
2thin layer;
7, at silicon chip upper surface, carry out photoetching, form dense boron resistance ohmic contact regions;
8, etch away the SiO of dense boron resistance ohmic contact regions
2thin layer;
9, use the method for diffusion, form heavily doped region 15;
10, etch away SiO
2thin layer;
11, the method for using low-pressure chemical vapor deposition, deposits two-layer SiO on silicon chip two sides
2/ silicon nitride (Si
3n
4) thin layer;
12, use the method for photoetching, form back of the body chamber 4 and impulse chamber 12 bottom SiO
2/ Si
3n
4film etching pattern;
13, etch away the SiO of 12He Bei chamber, impulse chamber 4 bottom ground floors
2/ Si
3n
4thin layer;
14, use photoetching method, form the SiO of back of the body chamber 4, mass 16 and 12 bottoms, impulse chamber
2/ Si3N
4film etching pattern;
15, etch away the ground floor SiO of mass 16 bottoms
2/ Si
3n
4thin layer and the second layer SiO that carries on the back chamber 4 and 12 bottoms, impulse chamber
2/ Si
3n
4thin layer;
16, use potassium hydroxide (KOH) corrosion, form back of the body chamber 4 and impulse chamber 12;
17, use the method for photoetching and etching, remove mass bottom second layer SiO
2/ Si
3n
4the ground floor SiO of thin layer and support frame 6 bottoms
2/ Si
3n
4thin layer;
18, using KOH etching mass 16, back of the body chamber 4 and impulse chamber 12, make its integral thickness reduce 5 microns, make mass 16 and Pyrex upper surface retention gap 5, is the vibration formation air damping of acceleration transducer mass, retention gap;
19, etch away the second layer SiO of support frame bottom
2/ Si
3n
4thin layer;
20, positive etching Si
3n
4/ SiO
2/ Si
3n
4thin layer, only retains individual layer SiO
2thin layer, as insulation course 7;
21, at silicon chip upper surface, use the method for photoetching and etching, form fairlead 14;
22, front plating aluminium lamination 8;
23, use the method for photoetching and etching, form aluminium lamination lead-in wire and electrode district, make the light boron voltage dependent resistor (VDR) bar 10 on pressure transducer 100 and acceleration transducer 200, each self-forming Hui Sitong full-bridge circuit;
24, use the method for etching, discharge mass block structure, form semi-girder 17;
25, use the method for AOE, etching Pyrex bottom 3, at the position limiting structure of five glass cylinder projections of bottom 3 upper surfaces formation;
26, the method for using laser boring forms manhole 2 on Pyrex bottom 3;
27, adopt the method that forms silicon/glass electrostatic bonding structure 1, make chip support frame 6 and bottom 3 bondings;
28, use the method for AOE, etching Pyrex upper cover 13, at the lower surface formation cavity of upper cover 13;
29, use the method for laser boring, at upper cover 13, form manhole 20;
30,, by BCB material 18, under vacuum condition, make upper cover 13 and chip support frame 6 upper surface bondings, the gas introduction passage of the vacuum reference cavity 9 of mineralization pressure sensor top and acceleration transducer top;
31, scribing completes the preparation of integrated piezoresistive silicon sensor chip.
Integrated piezoresistive silicon sensor chip in figure, makes pressure transducer 100 and acceleration transducer 200 integrated on the same surface of monocrystalline silicon.
Described pressure transducer 100 comprises support frame 6, described support frame 6 side's of being provided with diaphragms 11, the voltage dependent resistor (VDR) bar 10 being provided with in square diaphragm 11 borders, Pyrex bottom 3 and support frame 6 bottom surface bondings, on bottom 3, there is manhole 2, Pyrex upper cover 13 and support frame 6 upper surface bondings.
Described acceleration transducer 200 comprises support frame 6, described support frame 6 is provided with mass 16, semi-girder 17 connects support frame 6 and mass 16, in semi-girder 17 ends, be distributed with voltage dependent resistor (VDR) bar 10, the bottom surface bonding of Pyrex bottom 3 and support frame 6, the surface of Pyrex bottom 3 has position limiting structure, Pyrex upper cover 13 and support frame 6 upper surface bondings, and Pyrex upper cover 13 has manhole 20.
The feature of integrated piezoresistive silicon sensor chip provided by the invention is:
1, the semi-girder of acceleration transducer adopts both sides four girder constructions, and eight voltage dependent resistor (VDR) bar reasonable layouts, on semi-girder, form Hui Sitong full-bridge circuit, two resistance of each bridge route are in series, improve electric bridge resistance, reduce chip operation electric current, realize low-power consumption.
2, the consistency of thickness of the thickness of the square diaphragm of pressure transducer and the semi-girder of acceleration transducer, simplifies step of preparation process.
3, the position limiting structure below mass is five glass cylinder projections, and effect is in acceleration overload situation, prevents that mass displacement is excessive, avoids semi-girder generation phenomenon of rupture, protection sensor chip.
4, the manhole effect on Pyrex bottom is that pressure source can be introduced by impulse chamber, chip back, overcome conventional chip front side and introduced the impacts such as the caused pollution of pressure source, surface oxidation, and avoided the impact of pressure source on acceleration chip damping capacity, simplified core body packaging technology.
5, BCB(benzocyclobutene) material has advantages of that solidification temperature is lower, when chip and Pyrex upper cover bonding, does not affect the bonding performance of chip and Pyrex bottom; BCB material is insulating material, does not affect the lead-in wire of device and circuit in bonding process; BCB material water-intake rate is low, is conducive to air-tight packaging, can keep for a long time vacuum state.Use BCB material bonding, simplified Pyrex and chip bonding process.
6, Pyrex upper cover, under vacuum condition, with chip upper surface bonding, forms absolute pressure reference cavity, realizes absolute pressure force measurement; The lower surface of Pyrex upper cover has cavity in addition, can the side's of making diaphragm and the lower surface of upper cover keep enough distance, the side's of avoiding diaphragm and upper cover are attached together in bonding process, affect the test performance of pressure.
7, the principle of acceleration transducer is the kinematic system consisting of mass-spring-damping, completes the measurement of acceleration.The bonding under vacuum condition due to Pyrex upper cover and chip, so the Pyrex upper cover of acceleration transducer must be through-hole structure, after chip and Pyrex upper cover bonding, gas can pass into acceleration transducer, forms air damping.
Claims (3)
1. the preparation method of integrated piezoresistive silicon sensor chip, is characterized in that comprising the following steps:
The method of step 1, employing diffusion, forms voltage dependent resistor (VDR) bar and ohmic contact regions at monocrystalline silicon piece upper surface, then makes surface passivation layer;
The method of step 2, employing wet etching, simultaneously the impulse chamber of mineralization pressure sensor and the mass of acceleration transducer;
Step 3, making fairlead, and at monocrystalline silicon piece upper surface aluminium coated, method formation lead-in wire and electrode by chemical wet etching, couple together the voltage dependent resistor (VDR) bar on pressure transducer and acceleration transducer, forms respectively Hui Sitong full-bridge circuit and electrode;
The method of step 4, use dry etching, discharges single-axis acceleration sensors chip structure, forms both sides four girder constructions;
Step 5, at the upper surface of Pyrex bottom, with acceleration transducer mass correspondence position and pressure transducer side's diaphragm correspondence position, be processed to form respectively position limiting structure and manhole;
Step 6, by the method for electrostatic bonding, make the Pyrex bottom processed through step 5 and the support frame bonding of sensor chip, fixation of sensor chip;
Step 7, at the lower surface of Pyrex upper cover, with pressure transducer side's diaphragm correspondence position and acceleration transducer mass correspondence position, be processed to form respectively cavity and manhole;
Step 8, make the Pyrex upper cover processed through step 7 and the upper surface bonding of sensor chip support frame, complete the making of whole core body.
2. the sensor chip that prepared by the preparation method of integrated piezoresistive silicon sensor chip as claimed in claim 1, it is characterized in that, integrated piezoresistive silicon sensor chip, makes pressure transducer and acceleration transducer integrated on the same surface of monocrystalline silicon.
3. sensor chip as claimed in claim 2, it is characterized in that, described pressure transducer comprises support frame, the described support frame side of being provided with diaphragm, the voltage dependent resistor (VDR) bar being provided with in square diaphragm border, Pyrex bottom and support frame bottom surface bonding, have manhole on bottom, Pyrex upper cover and support frame upper surface bonding, be provided with cavity upper covering; Described acceleration transducer comprises support frame, described support frame is provided with mass, semi-girder connects support frame and mass, in semi-girder end, be distributed with voltage dependent resistor (VDR) bar, the bottom surface bonding of Pyrex bottom and support frame, the surface of Pyrex bottom has position limiting structure, Pyrex upper cover and support frame upper surface bonding, and Pyrex upper cover has manhole.
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Cited By (6)
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| CN104062059A (en) * | 2014-06-13 | 2014-09-24 | 浙江工业大学 | MEMS piezoresistive pressure sensor and manufacturing method thereof |
| CN104236628A (en) * | 2014-09-16 | 2014-12-24 | 武汉大学 | Four-degree-of-freedom combined sensor |
| CN105181011A (en) * | 2015-08-12 | 2015-12-23 | 中国电子科技集团公司第三十八研究所 | Pressure and acceleration two-in-one sensor of packaging structure and preparation method thereof |
| CN105776122A (en) * | 2014-11-13 | 2016-07-20 | 财团法人工业技术研究院 | Micro-electromechanical device with multiple airtight cavities and manufacturing method thereof |
| CN107032290A (en) * | 2016-01-21 | 2017-08-11 | 台湾积体电路制造股份有限公司 | Semiconductor devices and forming method thereof |
| CN108627287A (en) * | 2018-06-06 | 2018-10-09 | 上海天沐自动化仪表有限公司 | Integrated piezoresistive silicon sensor chip |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104062059A (en) * | 2014-06-13 | 2014-09-24 | 浙江工业大学 | MEMS piezoresistive pressure sensor and manufacturing method thereof |
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| CN104236628A (en) * | 2014-09-16 | 2014-12-24 | 武汉大学 | Four-degree-of-freedom combined sensor |
| CN105776122A (en) * | 2014-11-13 | 2016-07-20 | 财团法人工业技术研究院 | Micro-electromechanical device with multiple airtight cavities and manufacturing method thereof |
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| CN107032290A (en) * | 2016-01-21 | 2017-08-11 | 台湾积体电路制造股份有限公司 | Semiconductor devices and forming method thereof |
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| CN107032290B (en) * | 2016-01-21 | 2022-01-04 | 台湾积体电路制造股份有限公司 | Semiconductor device and method of forming the same |
| CN108627287A (en) * | 2018-06-06 | 2018-10-09 | 上海天沐自动化仪表有限公司 | Integrated piezoresistive silicon sensor chip |
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Application publication date: 20140326 |