CN204964093U - Difference capacitanc MEMS pressure sensor - Google Patents
Difference capacitanc MEMS pressure sensor Download PDFInfo
- Publication number
- CN204964093U CN204964093U CN201520363881.3U CN201520363881U CN204964093U CN 204964093 U CN204964093 U CN 204964093U CN 201520363881 U CN201520363881 U CN 201520363881U CN 204964093 U CN204964093 U CN 204964093U
- Authority
- CN
- China
- Prior art keywords
- support portion
- public
- fixed electorde
- lower fixed
- fixed electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The utility model discloses a difference capacitanc MEMS pressure sensor, sensitive structural layer include public sensitivity portion and are located the public supporting part at public sensitivity portion edge that the thickness of just public supporting part is greater than the thickness of public sensitivity portion, include for sensitive structural layer longitudinal symmetry be used for form the fixed electrode structure layer of going up of difference electric capacity, fix the electrode structure layer down with public sensitivity portion. The utility model discloses a MEMS pressure sensor through difference electric capacity structure, has strengthened the suppression of chip to the common -mode signal, has improved output signal's SNR, and simultaneously, the utility model discloses an altogether the thickness of supporting part is greater than the thickness of public sensitivity, and this just makes the public supporting part of outlying can shield meeting an emergency that temperature and stress arouses to greatly reduced because temperature and variation of stresses transmission meeting an emergency on the public sensitivity, improved the temperature stability and the stress stability of chip.
Description
Technical field
The utility model relates to sensor field, more specifically, relates to a kind of MEMS pressure sensor of differential capacitance type.
Background technology
In existing technical scheme, MEMS pressure sensor mainly contains condenser type and pressure resistance type two kinds, and wherein, capacitive MEMS pressure transducer comprises pressure sensitive film, substrate and contact.Pressure sensitive film and substrate form the vacuum chamber sealed, and the capacitor plate that pressure sensitive film is formed can be made a response in pressure change to external world; When the air pressure change in the external world, the pressure sensitive film be in above vacuum chamber can bend, thus the capacitance that pressure sensitive film and substrate are formed can change, and then reads the change of this electric capacity by ASIC circuit, characterizes extraneous pressure change.
Above-mentioned capacitive MEMS pressure transducer detects ambient pressure change by single electric capacity, and in general, the capacitance change caused by ambient pressure change is all very little, and the error adopting single electric capacity to carry out detecting is very large.In addition, except the pressure change in the external world can cause capacitance variations, other undesired signal also can cause the change of electric capacity, as stress, temperature and other common-mode signal, capital affects the changing value of electric capacity, these harmful signals can not be decayed or filtering, but export in the lump with pressure signal, and then affect the precision and stability of pressure detection.
Utility model content
An object of the present utility model is to provide a kind of new solution of differential capacitance type MEMS pressure sensor.
According to first aspect of the present utility model, provide a kind of differential capacitance type MEMS pressure sensor, comprising:
Sensitive structure layer, comprise the public responsive portion being positioned at middle part, and be positioned at the common support portion at edge, public responsive portion, described public responsive portion is connected on the sidewall in common support portion, and the thickness in common support portion is greater than the thickness in public responsive portion, make the cross section entirety of sensitive structure layer in dumbbell shape;
Upper fixed electorde structural sheet, comprises and to be suspended at above public responsive portion and to form the upper fixed electorde of capacitance structure with public responsive portion, fixed electrode is provided with corrosion hole;
Lower fixed electorde structural sheet, consistent with upper fixed electorde structural sheet structure, the two is symmetrical up and down along sensitive structure layer, and described lower fixed electorde structural sheet comprises and to be suspended at below public responsive portion and to form the lower fixed electorde of capacitance structure with public responsive portion; Described lower fixed electorde is provided with corrosion hole;
For the substrate supported, between described substrate and public responsive portion, define vacuum chamber.
Preferably, the position that described common support portion is connected with public responsive portion has the public inclined-plane of transition, and this public inclined-plane comprises the first inclined-plane being positioned at common support portion upper surface, and is positioned at the second inclined-plane of common support lower surface.
Preferably, fixed electrode structure layer comprises the upper fixed electrode support portion connecting upper fixed electorde edge, and fixed electrode supporting portion is connected by the upper surface of insulation course with common support portion;
Described lower fixed electorde structural sheet comprises the lower fixed electrode support portion connecting lower fixed electorde edge, and described lower fixed electrode support portion is connected with by the upper surface of insulation course with common support portion.
Preferably, fixed electrode structure layer also comprises in skewed upper fixed electorde connecting portion, fixed electrode is connected with upper fixed electrode support portion by upper fixed electorde connecting portion, and fixed electrode connecting portion is positioned at the top on the first inclined-plane, and with the first inclined-plane, there is identical gradient;
Described lower fixed electorde structural sheet also comprises in skewed lower fixed electorde connecting portion, described lower fixed electorde is connected with lower fixed electrode support portion by lower fixed electorde connecting portion, and described lower fixed electorde connecting portion is in the below on the second inclined-plane, and with the second inclined-plane, there is identical gradient.
Preferably, insulation course is respectively equipped with between fixed electrode connecting portion and the first inclined-plane, between described lower fixed electorde connecting portion and the second inclined-plane.
Preferably, described lower fixed electrode support portion is provided with conductive part, this conductive part runs through insulation course, common support portion and upper fixed electrode support portion and links together, and in upper fixed electrode support portion isolation formed under the first conductive contact of fixed electorde;
Described common support portion is provided with conductive part, and this conductive part runs through insulation course and upper fixed electrode support portion links together, and isolation forms second conductive contact in public responsive portion in upper fixed electrode support portion;
Fixed electrode supporting portion is also provided with the 3rd conductive contact of fixed electorde.
Preferably, described substrate is connected in the lower fixed electrode support portion of lower fixed electorde structural sheet by insulation course.
Preferably, described substrate is connected in the common support portion of sensitive structure layer by insulation course, and described lower fixed electorde structural sheet is suspended in vacuum chamber.
MEMS pressure sensor of the present utility model, upper fixed electorde, public responsive portion, lower fixed electorde constitute differential capacitance structure, thus enhance the suppression of chip to common-mode signal, improve the signal to noise ratio (S/N ratio) of output signal; Simultaneously, the thickness in the utility model common support portion is greater than the thickness in public responsive portion, make the cross section entirety of sensitive structure layer in dumbbell shape, this just makes peripheral common support portion can shield strain caused by temperature and stress, thus greatly reduce due to temperature and STRESS VARIATION be delivered to strain in public responsive portion, improve temperature stability and the stress stability of chip.
Inventor of the present utility model finds, in the prior art, the error adopting single electric capacity to carry out detecting is very large, in addition, except the pressure change in the external world can cause capacitance variations, other undesired signal also can cause the change of electric capacity, as stress, temperature and other common-mode signal, all can affect the changing value of electric capacity, these harmful signals can not be decayed or filtering, but export in the lump with pressure signal, and then affect the precision and stability of pressure detection.Therefore, the technical assignment that the utility model will realize or technical matters to be solved are that those skilled in the art never expect or do not anticipate, therefore the utility model is a kind of new technical scheme.
By referring to the detailed description of accompanying drawing to exemplary embodiment of the present utility model, further feature of the present utility model and advantage thereof will become clear.
Accompanying drawing explanation
In the description combined and the accompanying drawing forming a part for instructions shows embodiment of the present utility model, and illustrate that one is used from and explains principle of the present utility model together with it.
Fig. 1 is the structural representation of the utility model MEMS pressure sensor.
Fig. 2 to Figure 13 is the process chart of the utility model MEMS pressure sensor manufacture method.
Figure 14 is the schematic diagram of another enforcement structure of the utility model MEMS pressure sensor.
Embodiment
Various exemplary embodiment of the present utility model is described in detail now with reference to accompanying drawing.It should be noted that: unless specifically stated otherwise, otherwise positioned opposite, the numerical expression of the parts of setting forth in these embodiments and step and numerical value do not limit scope of the present utility model.
Illustrative to the description only actually of at least one exemplary embodiment below, never as any restriction to the utility model and application or use.
May not discuss in detail for the known technology of person of ordinary skill in the relevant, method and apparatus, but in the appropriate case, described technology, method and apparatus should be regarded as a part for instructions.
In all examples with discussing shown here, any occurrence should be construed as merely exemplary, instead of as restriction.Therefore, other example of exemplary embodiment can have different values.
It should be noted that: represent similar terms in similar label and letter accompanying drawing below, therefore, once be defined in an a certain Xiang Yi accompanying drawing, then do not need to be further discussed it in accompanying drawing subsequently.
With reference to figure 1, a kind of differential capacitance type MEMS pressure sensor that the utility model provides, it sensitive structure layer 2 comprising substrate 1 and support on substrate 1, upper fixed electorde structural sheet 3, lower fixed electorde structural sheet 4, wherein, upper fixed electorde structural sheet 3 is positioned at the top of sensitive structure layer 2, itself and sensitive structure layer 2 can form the first Detection capacitance, lower fixed electorde structural sheet 4 is positioned at the below of sensitive structure layer 2, itself and sensitive structure layer 2 can form the second Detection capacitance, sensitive structure layer 2 is as the public responsive pole plate of two Detection capacitances, and upper fixed electorde structural sheet 3, lower fixed electorde structural sheet 4 is symmetrical relative to sensitive structure layer 2, the first Detection capacitance and the second Detection capacitance is made to constitute differential capacitance structure, thus improve the detectability of small capacitance, enhance the suppression of chip to common-mode signal, improve the signal to noise ratio (S/N ratio) of output signal.
Particularly, with reference to figure 1, sensitive structure layer 2 of the present utility model, it comprises the public responsive portion 22 being positioned at middle part, and being positioned at the common support portion 20 at edge, public responsive portion 22, this public responsive portion 22 and common support portion 20 can be one, adopt single crystal silicon material to make.Public responsive portion 22 is the movable plate of capacitance structure, and under the pressure effect in the external world, this public responsive portion 22 occurs bending and deformation.Common support portion 20 is mainly public responsive portion 22 and provides support, and makes public responsive portion 22 remain on preposition.The edge conjunction in public responsive portion 22 is on the sidewall in common support portion 20, and preferably its link position is positioned at the middle part of common support portion 20 sidewall, makes public responsive portion 22 surrounded by common support portion 20.Wherein, the thickness in described common support portion 20 is greater than the thickness in public responsive portion 22, makes the cross section entirety of sensitive structure layer 2 in dumbbell shape.
Upper fixed electorde structural sheet 3 of the present utility model, comprise the upper fixed electorde 32 be suspended at above public responsive portion 22, upper fixed electorde 32 supports by mode well-known to those skilled in the art and is suspended at the top in public responsive portion 22, makes this public responsive portion 22 can form one with upper fixed electorde 32 and can be used for the first Detection capacitance that detected pressures changes.
In the embodiment that the utility model one is concrete, fixed electrode structure layer 3 also comprises the upper fixed electrode support portion 30 being positioned at fixed electorde 32 edge, on this, fixed electorde 32 and upper fixed electrode support portion 30 can be one, adopt polycrystalline silicon material to make.Upper fixed electrode support portion 30 is mainly fixed electorde 32 and provides support, and fixed electorde 32 is remained on preposition.Edge and the upper fixed electrode support portion 30 of upper fixed electorde 32 link together, and make fixed electorde 32 surrounded by upper fixed electrode support portion 30.Wherein, upper fixed electrode support portion 30 is supported on the upper surface in the common support portion 20 of sensitive structure layer 2 by insulation course 5, makes fixed electorde 32 can be suspended at the top in public responsive portion 22, leaves the space 23 for the first Detection capacitance work therebetween.
Lower fixed electorde structural sheet 4 of the present utility model is positioned at the below of sensitive structure layer 2, and it is consistent with the structure of upper fixed electorde structural sheet 3, and the two is symmetrical along sensitive structure layer about 2.Comprise the lower fixed electorde 42 be suspended at below public responsive portion 22, lower fixed electorde 42 supports by mode well-known to those skilled in the art and is suspended at the below in public responsive portion 22, makes this public responsive portion 22 can form one with lower fixed electorde 42 and can be used for the second Detection capacitance that detected pressures changes.
In the embodiment that the utility model one is concrete, described lower fixed electorde structural sheet 4 also comprises the lower fixed electrode support portion 40 being positioned at lower fixed electorde 42 edge, this lower fixed electorde 42 and lower fixed electrode support portion 40 can be one, adopt polycrystalline silicon material to make.Lower fixed electrode support portion 40 is mainly lower fixed electorde 42 and provides support, and lower fixed electorde 42 is remained on preposition.Edge and the lower fixed electrode support portion 40 of lower fixed electorde 42 link together, and make lower fixed electorde 42 surrounded by lower fixed electrode support portion 40.Wherein, lower fixed electrode support portion 40 is connected on the lower surface in common support portion 20 of sensitive structure layer 2 by insulation course 5, makes lower fixed electorde 42 can be suspended at the below in public responsive portion 22, leaves the space for the second Detection capacitance work therebetween.
In the embodiment that the utility model one is concrete, can by lower fixed electrode support portion 40 by insulation course bonding on substrate 1, and make to form a vacuum chamber 7 between substrate 1 and lower fixed electorde 42.Now, occuring bending and deformation to make public responsive portion 22 can respond to ambient pressure change, fixed electrode 32 being provided with multiple corrosion hole 33, by the plurality of corrosion hole 33, public responsive portion 22 can being in communication with the outside.The utility model one preferred embodiment in, described lower fixed electorde 42 is also provided with multiple corrosion hole 43, now, can regard as, vacuum chamber 7 is surrounded by public responsive portion 22 and substrate 1, thus improve the volume of vacuum chamber 7, make the deformation dynamics in public responsive portion 22 more can reflect the dynamics of ambient pressure change.
In another concrete embodiment of the utility model, with reference to Figure 14, described substrate 1 is bonded in the common support portion 20 of sensitive structure layer 2 by insulation course, and this just makes described lower fixed electorde structural sheet 4 entirety be suspended in vacuum chamber 7.Lower fixed electorde structural sheet 4 is separated with the bond area of substrate 1, can prevent bonding technology from causing damage to lower fixed electorde structural sheet 4.In addition, contributive partial etching can also do not had to fall sensitivity by upper and lower fixed electorde, reduce the stray capacitance of upper and lower fixed electorde to public responsive portion 22, to play the object of restraint speckle.The method of this reduction stray capacitance belongs to the common practise of those skilled in the art, no longer illustrates at this.
MEMS pressure sensor of the present utility model, upper fixed electorde, public responsive portion, lower fixed electorde constitute differential capacitance structure, thus enhance the suppression of chip to common-mode signal, improve the signal to noise ratio (S/N ratio) of output signal; Simultaneously, the thickness in the utility model common support portion is greater than the thickness in public responsive portion, make the cross section entirety of sensitive structure layer in dumbbell shape, this just makes peripheral common support portion can shield strain caused by temperature and stress, thus greatly reduce due to temperature and STRESS VARIATION be delivered to strain in public responsive portion, improve temperature stability and the stress stability of chip.
The utility model one preferred embodiment in, the position that described common support portion 20 is connected with public responsive portion 22 has the public inclined-plane of transition, this public inclined-plane comprises the first inclined-plane 21 being positioned at common support portion 20 upper surface, and be positioned at the second inclined-plane 24 of common support portion 20 lower surface, public responsive portion 22 is connected with the public inclined-plane in common support portion 20, makes public responsive portion 22, groove that the public inclined-plane in common support portion 20 defines approximate isosceles trapezoid; Simultaneously, by the public inclined-plane arranged, when making fixed electorde structural sheet 3, lower fixed electorde structural sheet 4 on making, upper fixed electorde structural sheet 3, lower fixed electorde structural sheet 4 are deposited on to be had on the sensitive structure layer 2 of the ladder gradient, greatly can reduce the internal stress of film.
In order to be mapped with sensitive structure layer 2, fixed electrode structure layer 3 also comprises in skewed upper fixed electorde connecting portion 31, fixed electrode 32 is connected with upper fixed electrode support portion 30 by upper fixed electorde connecting portion 31, wherein, upper fixed electorde connecting portion 31 has the identical gradient of angle with the first inclined-plane 21, makes fixed electorde connecting portion 31 completely parallel with the first inclined-plane 21.Select whole upper fixed electorde structural sheet 3 to have homogeneous thickness, that is, the structure trend of whole upper fixed electorde structural sheet 3 is completely the same with the structure of sensitive structure layer 2 upper surface.Wherein, upper fixed electrode support portion 30 is supported on the top in common support portion 20 abreast by insulation course 5, fixed electrode connecting portion 31, upper fixed electorde 32 support the top being suspended at the first inclined-plane 21, public responsive portion 22 respectively abreast by upper fixed electrode support portion 30.Further preferably, also can arrange insulation course between upper fixed electorde connecting portion 31 and the first inclined-plane 21, the insulation course 5 between the insulation course of this position and upper fixed electrode support portion 30, common support portion 20 is one.
Lower fixed electorde structural sheet 4, upper fixed electorde structural sheet 3 are symmetrical relative to sensitive structure layer about 2, in order to be mapped with sensitive structure layer 2, described lower fixed electorde structural sheet 4 also comprises in skewed lower fixed electorde connecting portion 41, and described lower fixed electorde 42 is connected with lower fixed electrode support portion 40 by lower fixed electorde connecting portion 41.Wherein, lower fixed electorde connecting portion 41 has the identical gradient of angle with the second inclined-plane 24, makes lower fixed electorde connecting portion 41 completely parallel with the first inclined-plane 21.Select whole lower fixed electorde structural sheet 4 to have homogeneous thickness, that is, the structure trend of whole lower fixed electorde structural sheet 4 is completely the same with the structure of sensitive structure layer 2 lower surface.Wherein, lower fixed electrode support portion 40 is connected to the below in common support portion 20 abreast by insulation course 5, described lower fixed electorde connecting portion 41, lower fixed electorde 42 are suspended at the below in the second inclined-plane 24, public responsive portion 22 respectively abreast by lower fixed electrode support portion 40.Further preferably, also can arrange insulation course between lower fixed electorde connecting portion 41 and the second inclined-plane 24, the insulation course 5 between the insulation course of this position and lower fixed electrode support portion 40, common support portion 20 is one.
MEMS pressure sensor of the present utility model, is needed the electric signal of upper fixed electorde 32, public responsive portion 22, lower fixed electorde 42 to draw, is obtained the numerical value of the first Detection capacitance, the second Detection capacitance by circuit.At this, by mode well-known to those skilled in the art, the signal of above-mentioned three pole plates is drawn.In the embodiment that the utility model one is concrete, with reference to figure 1, described lower fixed electrode support portion 40 is provided with conductive part, the lower end of this conductive part is connected with lower fixed electrode support portion 40, insulation course 5, common support portion 20 are run through in its upper end, link together with upper fixed electrode support portion 30, and the first conductive contact 80 of fixed electorde 42 under being formed in upper fixed electrode support portion 30.
Described common support portion 20 also can be provided with conductive part, and this conductive part runs through insulation course 5 and links together with upper fixed electrode support portion 30, and on the relevant position in upper fixed electrode support portion 30, form second conductive contact 81 in public responsive portion 22; Fixed electrode supporting portion 30 is also provided with the 3rd conductive contact 82 of fixed electorde 32.Three conductive contacts are all arranged in fixed electrode support portion 30, in order to insulation each other, graphical treatment can be carried out in upper fixed electrode support portion 30, form isolated area 9, thus the region of three conductive contacts in upper fixed electrode support portion 30 is isolated from each other.
Above-mentioned conductive part plays the effect conducted, and it can be any conductive material well-known to those skilled in the art, and it can be metal material, also can be polycrystalline silicon material.Be applied in the technical solution of the utility model, conductive part between common support portion 20 and upper fixed electrode support portion 30 also can adopt polycrystalline silicon material, it adopts identical material with upper fixed electrode support portion 30, at this, can be understood as this conductive part and upper fixed electrode support portion 30 is one.Conductive part between lower fixed electrode support portion 40 and upper fixed electrode support portion 30, comprise the metal section 6 being arranged in common support portion 20, wherein the upper/lower terminal of metal section 6 links together respectively by electrical connection section and upper fixed electrode support portion 30, lower fixed electrode support portion 40; This electrical connection section can be polycrystalline silicon material, it adopts identical material with in upper fixed electrode support portion 30, lower fixed electrode support portion 40, at this, can be understood as these two conductive parts is one respectively with upper fixed electrode support portion 30, lower fixed electrode support portion 40.
The utility model additionally provides a kind of manufacture method of above-mentioned MEMS pressure sensor, comprises the following steps:
A) at the through hole at etching its upper and lower two ends through, one end of sensitive structure layer 2, on the hole wall of through hole, grow insulation course 5 afterwards, and in through hole, fill polycrystalline silicon material or metal section 6, with reference to figure 2; Sensitive structure layer 2 can adopt single crystal silicon material, keeps insulating by insulation course 5 and the polycrystalline silicon material in through hole or metal section 6;
B) carry out etching or corroding at the upper surface of sensitive structure layer 2, form the lower surface in the lower surface in common support portion 20, the second inclined-plane 24 and public responsive portion 22, with reference to figure 3; By the method for anisotropic etch, form the groove in isosceles trapezoid at the upper surface of sensitive structure layer 2, the bottom of this groove is the lower surface in public responsive portion 22, and its sidewall is second inclined-plane 24 in common support portion 20;
C) grow a layer insulating 5 at the upper surface of whole sensitive structure layer 2, make this insulation course 5 cover the whole upper surface of sensitive structure layer 2; Insulation course 5 is graphically etched, the insulation course 5 be positioned at above polycrystalline silicon material or metal section 6 is etched away, form etched hole 60, thus the end face of polycrystalline silicon material or metal section 6 is exposed, with reference to figure 4;
D) fixed electorde structural sheet 4 under the upper surface deposition of insulation course 5, this lower fixed electorde structural sheet 4 can be polycrystalline silicon material, it has homogeneous thickness, after this lower fixed electorde structural sheet 4 is deposited on insulation course 5, define lower fixed electrode support portion 40, lower fixed electorde connecting portion 41, lower fixed electorde 42; And lower fixed electrode support portion 40 is deposited in etched hole 60, link together, with reference to figure 5 with polycrystalline silicon material or metal section 6;
E) on lower fixed electorde 42, etching forms multiple corrosion hole 43, with reference to figure 6;
F) by corrosion hole 43, the insulation course 5 between lower fixed electorde 42 and public responsive portion 22 is eroded, thus lower fixed electorde 42 is come from public responsive portion 22 release, between lower fixed electorde 42 and public responsive portion 22, there is certain space 23, make lower fixed electorde 42 and public responsive portion 22 can be configured for the electric capacity detected, with reference to figure 7;
G) whole sensitive structure layer 2, lower fixed electorde structural sheet 4 are overturn, bonding on substrate 1, and defines the vacuum chamber 7 between substrate 1 and public responsive portion 22, with reference to figure 8; In this step, by lower fixed electrode support portion 40 by insulation course bonding on substrate 1, also change structure can be passed through, by common support portion 20 by insulation course bonding on substrate 1;
H) after said structure upset, the another side of sensitive structure layer 2 is processed, with reference to the direction of figure 9, to step b) similar, carry out etching or corroding at sensitive structure layer 2 upper surface, form the upper surface in the upper surface in common support portion 20, the first inclined-plane 21 and public responsive portion 22; By the method for anisotropic etch, form the groove in isosceles trapezoid at the upper surface of sensitive structure layer 2, the bottom of this groove is the upper surface in public responsive portion 22, and its sidewall is first inclined-plane 21 in common support portion 20; Wherein, before this step, as required, step sensitive structure layer 2 being thinned to predetermined thickness is also comprised;
I) at the upper surface growth insulation course 5 of whole sensitive structure layer 2, this insulation course 5 is made to cover the whole upper surface of sensitive structure layer 2, and insulation course 5 is graphically etched, the insulation course 5 be positioned at above polycrystalline silicon material or metal section 6 is etched away, form etched hole 800, the end face of polycrystalline silicon material or metal section 6 is exposed; The insulation course 5 being positioned at precalculated position above common support portion 20 is etched away simultaneously, form etched hole 810, part common support portion 20 is exposed, with reference to Figure 10;
J) fixed electorde structural sheet 3 in the upper surface deposition of insulation course 5, to steps d) similar, on this, fixed electorde structural sheet 3 can be polycrystalline silicon material, it has homogeneous thickness, after fixed electorde structural sheet 3 is deposited on insulation course 5 on this, define fixed electrode support portion 30, upper fixed electorde connecting portion 31, upper fixed electorde 32; And upper fixed electrode support portion 30 is deposited in etched hole 800,810, link together with polycrystalline silicon material or metal section 6, common support portion 20 respectively, with reference to Figure 11;
K) the first conductive contact 80, second conductive contact 81, the 3rd conductive contact 82 is made in the relevant position in upper fixed electrode support portion 30, with reference to Figure 12, particularly, the first conductive contact 80 is positioned at directly over etched hole 800, and the second conductive contact 81 is positioned at directly over etched hole 810;
L) on upper fixed electorde 32, etching forms corrosion hole 33; And etch in upper fixed electrode support portion 30, form isolated area 9, by the first conductive contact 80, second conductive contact 81, the 3rd conductive contact 82 is mutually isolated opens, with reference to Figure 13;
M) by corrosion hole 33, the insulation course 5 between upper fixed electorde 32 and public responsive portion 22 is eroded, thus upper fixed electorde 32 is come from public responsive portion 22 release, between upper fixed electorde 32 and public responsive portion 22, there is certain space 23, make fixed electorde 32 and public responsive portion 22 can be configured for the electric capacity detected, with reference to figure 1.
Manufacture method of the present utility model, the formation of sensitive structure layer be by thereon, the corrosion of lower surface or etching come, and reduces the processing cost of chip; Meanwhile, adopt monocrystalline silicon to make sensitive structure layer, greatly can reduce the stress of its remnants, improve the stability of chip; The polysilicon layer of upper fixed electorde structural sheet, lower fixed electorde structural sheet, on the surface with the ladder gradient of sensitive structure layer, can reduce the internal stress of film greatly.
Although be described in detail specific embodiments more of the present utility model by example, it should be appreciated by those skilled in the art, above example is only to be described, instead of in order to limit scope of the present utility model.It should be appreciated by those skilled in the art, when not departing from scope and spirit of the present utility model, above embodiment can be modified.Scope of the present utility model is limited by claims.
Claims (8)
1. a differential capacitance type MEMS pressure sensor, is characterized in that, comprising:
Sensitive structure layer (2), comprise the public responsive portion (22) being positioned at middle part, and be positioned at the common support portion (20) at public responsive portion (22) edge, described public responsive portion (22) is connected on the sidewall of common support portion (20), and the thickness of common support portion (20) is greater than the thickness of public responsive portion (22), make the cross section entirety of sensitive structure layer (2) in dumbbell shape;
Upper fixed electorde structural sheet (3), comprise and be suspended at public responsive portion (22) top and form the upper fixed electorde (32) of capacitance structure with public responsive portion (22), fixed electrode (32) is provided with corrosion hole (33);
Lower fixed electorde structural sheet (4), consistent with upper fixed electorde structural sheet (3) structure, the two is symmetrical up and down along sensitive structure layer (2), and described lower fixed electorde structural sheet (4) comprises and is suspended at public responsive portion (22) below and forms the lower fixed electorde (42) of capacitance structure with public responsive portion (22); Described lower fixed electorde (42) is provided with corrosion hole (43);
For the substrate (1) supported, between described substrate (1) and public responsive portion (22), define vacuum chamber (7).
2. MEMS pressure sensor according to claim 1, it is characterized in that: the upper position be connected with public responsive portion (22) of described common support portion (20) has the public inclined-plane of transition, this public inclined-plane comprises the first inclined-plane (21) being positioned at common support portion (20) upper surface, and is positioned at second inclined-plane (24) of common support portion (20) lower surface.
3. MEMS pressure sensor according to claim 2, is characterized in that:
Fixed electrode structure layer (3) comprises the upper fixed electrode support portion (30) connecting upper fixed electorde (32) edge, and fixed electrode supporting portion (30) is connected by the upper surface of insulation course (5) with common support portion (20);
Described lower fixed electorde structural sheet (4) comprises the lower fixed electrode support portion (40) connecting lower fixed electorde (42) edge, and described lower fixed electrode support portion (40) is connected with by the upper surface of insulation course (5) with common support portion (20).
4. MEMS pressure sensor according to claim 3, is characterized in that:
Fixed electrode structure layer (3) also comprises in skewed upper fixed electorde connecting portion (31), fixed electrode (32) is connected with upper fixed electrode support portion (30) by upper fixed electorde connecting portion (31), and fixed electrode connecting portion (31) is positioned at the top of the first inclined-plane (21), and with the first inclined-plane (21), there is identical gradient;
Described lower fixed electorde structural sheet (4) also comprises in skewed lower fixed electorde connecting portion (41), described lower fixed electorde (42) is connected with lower fixed electrode support portion (40) by lower fixed electorde connecting portion (41), and described lower fixed electorde connecting portion (41) is positioned at the below of the second inclined-plane (24), and with the second inclined-plane (24), there is identical gradient.
5. MEMS pressure sensor according to claim 4, is characterized in that: be respectively equipped with insulation course (5) between fixed electrode connecting portion (31) and the first inclined-plane (21), between described lower fixed electorde connecting portion (41) and the second inclined-plane (24).
6. MEMS pressure sensor according to claim 3, is characterized in that:
Described lower fixed electrode support portion (40) is provided with conductive part, this conductive part runs through insulation course, common support portion (20) and upper fixed electrode support portion (30) link together, and under the upper isolation of upper fixed electrode support portion (30) is formed first conductive contact (80) of fixed electorde (42);
Described common support portion (20) is provided with conductive part, this conductive part runs through insulation course and upper fixed electrode support portion (30) links together, and forms second conductive contact (81) of public responsive portion (22) in the upper isolation of upper fixed electrode support portion (30);
Fixed electrode supporting portion (30) is also provided with the 3rd conductive contact (82) of upper fixed electorde (32).
7. MEMS pressure sensor according to claim 3, is characterized in that: described substrate (1) is connected on the lower fixed electrode support portion (40) of lower fixed electorde structural sheet (4) by insulation course.
8. MEMS pressure sensor according to claim 3, it is characterized in that: described substrate (1) is connected in the common support portion (20) of sensitive structure layer (2) by insulation course, described lower fixed electorde structural sheet (4) is suspended in vacuum chamber (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520363881.3U CN204964093U (en) | 2015-05-29 | 2015-05-29 | Difference capacitanc MEMS pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520363881.3U CN204964093U (en) | 2015-05-29 | 2015-05-29 | Difference capacitanc MEMS pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204964093U true CN204964093U (en) | 2016-01-13 |
Family
ID=55059149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520363881.3U Withdrawn - After Issue CN204964093U (en) | 2015-05-29 | 2015-05-29 | Difference capacitanc MEMS pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204964093U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105067178A (en) * | 2015-05-29 | 2015-11-18 | 歌尔声学股份有限公司 | Differential-capacitive MEMS pressure sensor and manufacturing method thereof |
| CN108426658A (en) * | 2018-03-26 | 2018-08-21 | 温州大学 | Ring contacts high range condenser type micropressure sensor |
| CN111122020A (en) * | 2019-12-31 | 2020-05-08 | 中国科学院微电子研究所 | Capacitive pressure detection device and sensor |
| CN112673243A (en) * | 2018-09-14 | 2021-04-16 | 芬兰国家技术研究中心股份公司 | Pressure sensor |
| CN115235655A (en) * | 2022-08-02 | 2022-10-25 | 北京智芯传感科技有限公司 | Differential capacitance pressure sensor |
-
2015
- 2015-05-29 CN CN201520363881.3U patent/CN204964093U/en not_active Withdrawn - After Issue
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105067178A (en) * | 2015-05-29 | 2015-11-18 | 歌尔声学股份有限公司 | Differential-capacitive MEMS pressure sensor and manufacturing method thereof |
| WO2016192360A1 (en) * | 2015-05-29 | 2016-12-08 | 歌尔声学股份有限公司 | Differential capacitive mems pressure sensor and manufacturing method thereof |
| CN105067178B (en) * | 2015-05-29 | 2018-01-19 | 歌尔股份有限公司 | A kind of differential capacitance type MEMS pressure sensor and its manufacture method |
| US10495535B2 (en) | 2015-05-29 | 2019-12-03 | Goertek.Inc | Differential capacitive MEMS pressure sensor and manufacturing method thereof |
| CN108426658A (en) * | 2018-03-26 | 2018-08-21 | 温州大学 | Ring contacts high range condenser type micropressure sensor |
| CN108426658B (en) * | 2018-03-26 | 2020-05-19 | 温州大学 | Ring contact high-range capacitance type micro-pressure sensor |
| CN112673243A (en) * | 2018-09-14 | 2021-04-16 | 芬兰国家技术研究中心股份公司 | Pressure sensor |
| US11767218B2 (en) | 2018-09-14 | 2023-09-26 | Teknologian Tutkimuskeskus Vtt Oy | Microelectromechanical capacitive pressure sensor having a valve portion being operable to close first output and open second output to equalize pressure |
| CN111122020A (en) * | 2019-12-31 | 2020-05-08 | 中国科学院微电子研究所 | Capacitive pressure detection device and sensor |
| CN115235655A (en) * | 2022-08-02 | 2022-10-25 | 北京智芯传感科技有限公司 | Differential capacitance pressure sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105067178A (en) | Differential-capacitive MEMS pressure sensor and manufacturing method thereof | |
| CN204964093U (en) | Difference capacitanc MEMS pressure sensor | |
| US10551263B2 (en) | MEMS pressure sensing element | |
| US10407300B2 (en) | Integrated structure of mems pressure sensor and mems inertia sensor | |
| CN104848982A (en) | Quasi-differential-capacitor type MEMS pressure sensor and manufacturing method thereof | |
| CN104883652A (en) | MEMS microphone and pressure sensor integrated structure and manufacture method thereof | |
| CN105307092A (en) | MEMS microphone and environmental sensor integrated structure and integrated manufacturing method | |
| EP1898196A2 (en) | Method for fabricating capacitive pressure sensor and capacitive pressure sensor fabricated thereby | |
| KR20170036061A (en) | Suspended membrane for capacitive pressure sensor | |
| CN105181217B (en) | MEMS pressure sensor and its manufacturing method | |
| CN104677528A (en) | Capacitive pressure sensor and preparation method thereof | |
| CN105444931A (en) | SOI pressure-sensitive chip based on sacrificial layer technology, and manufacturing method thereof | |
| CN105181186A (en) | Pressure sensing element and manufacturing method thereof | |
| CN101481084A (en) | Micro-inertial sensor with variable pitch capacitor and method for producing the same | |
| CN104062044A (en) | Micro mechanical differential capacitive pressure gauge | |
| CN105036054A (en) | MEMS pressure sensor and manufacturing method thereof | |
| CN103991836B (en) | The manufacture method of MEMS sensor | |
| CN104634832B (en) | CMOS MEMS capacitive humidity sensors and preparation method thereof | |
| CN205179361U (en) | MEMS microphone, environmental sensor's integrated morphology | |
| WO2019019843A1 (en) | Double-film capacitive pressure sensor and manufacturing method | |
| CN113551812A (en) | Cross beam membrane stress concentration micro-pressure sensor chip and preparation method thereof | |
| US20130126994A1 (en) | Capacitive pressure sensor and method for manufacturing same | |
| CN103837290B (en) | High-precision capacitance pressure transducer, | |
| CN204681590U (en) | MEMS microphone, pressure sensor integrated morphology | |
| CN108037183B (en) | Ultrasonic array gas sensor based on capacitance type bridge structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160113 Effective date of abandoning: 20180119 |