CN1523360A - Minisize heat flow accelerometer and method for making same - Google Patents
Minisize heat flow accelerometer and method for making same Download PDFInfo
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- CN1523360A CN1523360A CNA031432875A CN03143287A CN1523360A CN 1523360 A CN1523360 A CN 1523360A CN A031432875 A CNA031432875 A CN A031432875A CN 03143287 A CN03143287 A CN 03143287A CN 1523360 A CN1523360 A CN 1523360A
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Abstract
The invention discloses a micro heat flow accelerometer, namely a micro sensor, and making method, composed of sealed monocrystal silicon wafer, heater wire, temperature sensor, inner and outer cavities, detecting circuit and so on. It uses gas as sensitive medium and using the theory that gas's natural convection changes under the action of acceleration to measure the acceleration in the direction of one or two coordinate axes. The heater wire and temperature sensor are suspended and fixed on the silicon cavity. The heat field produced by the heater wire changes when accelerated, the detecting circuit detects the temperature change of the temperature sensor so as to measure the acceleration value. It has no detecting mass block, elastic or strain beam, etc, so having reliable performance, simple and ripe technique, low making cost and so on, and it is specially applied to intelligent cannonball, car, toy, etc.
Description
Technical field
The present invention relates to a kind of miniature heat-flow accelerometer and manufacture method thereof in the sensor field, be specially adapted to make acceleration transducer in the occasions such as intelligent projectile, automobile, toy.
Background technology
Because accelerometer can be measured physical quantitys such as acceleration, speed, displacement and degree of tilt, it is widely used in numerous areas such as inertial guidance, micro-satellite, control automatically, navigation, GPS, automobile safety system and virtual game machine.Some machineries and electron device can both carry out the measurement of acceleration, and as piezoelectric type, pressure resistance type, condenser type, tunnel effect type, yet people still wish to provide than lower, the more reliable accelerometer of current device cost.
MEMS (micro electro mechanical system) (MEMS) is meant the micro-system that integrates parts such as micromechanics and microelectronics with technique for manufacturing batch manufacturings such as microelectronics, it can be divided into a plurality of independent functional units, the physics or the chemical signal of input are converted to electric signal by sensor, through after the signal Processing, by actuator and external influence.The characteristics of MEMS and advantage are conspicuous: volume is little, in light weight, stable performance, by technologies such as worker C can produce in batches, cost is low, consistency of performance good, low in energy consumption, resonance frequency is high, the response time is short, comprehensive integration degree height, added value height, have the effect of functions such as multiple Conversion of energy, transmission etc.
In the existing accelerometer, piezoelectric accelerometer comprises the piezoelectricity or the crystalline material that produce electromotive force when quickening, and it generally is used for measuring vibrations, is unsuitable for the measurement of constant acceleration usually.Piezoresistive accelerometer constitutes by can produce the mechanical material that stretches under acceleration, it is placed on a piezoresistance and produces the position that stretches, thereby obtain because the electric signal that acceleration produced, this accelerometer can be measured constant high acceleration under suitable cost, yet it only can use in the finite temperature scope, and is also quite responsive to environment temperature.Capacitive accelerometer utilize two parallel flats quicken mutually near and produce capacitance variations and realize its function, changes in capacitance can be measured by electronic circuit, that can do is very little, but needs the electronic circuit of the tiny signal of detection and measurement.
Summary of the invention
The objective of the invention is to avoid the weak point in the above-mentioned background technology and a kind of miniature heat-flow accelerometer and manufacture method thereof that adopts micromachined technology to be made into movable mass block part simple in structure, no is provided, and the present invention also has characteristics such as volume is little, in light weight, cost is low, processed finished products rate height, dependable performance, strong shock resistance.
The object of the present invention is achieved like this, and manufacture method of the present invention comprises step:
1. on monocrystalline silicon piece 2, adopt low-pressure chemical vapor phase deposition technology or plasma reinforced chemical vapour deposition technology deposit one deck silicon nitride film or silicon dioxide film 8;
2. on silicon nitride film or silicon dioxide film 8, be coated with one deck photoresist 13, adopt the photoetching process photoetching to form the electric resistance structure figure of heater strip 6, temperature sensor 7;
3. use magnetron sputtering technique sputter ground floor chromium or titanium adhesion layer, second layer metal thermo-sensitive resistor, the 3rd layer of gold layer 14 successively on photoresist 13, silicon nitride film or silicon dioxide film 8;
4. monocrystalline silicon 2 is put into the alcohol container, adopt ultrasonic stripping technology to peel off adhesion layer, second layer metal thermo-sensitive resistor, the 3rd layer of gold layer 14 such as ground floor chromium beyond the electric resistance structure figure of heater strip 6 and temperature sensor 7 or titanium, form heater strip 6, temperature sensor 7 electric resistance structure figures;
5. adopt photoetching process and potassium iodide wet corrosion technique, erode the gold layer on heater strip 6, the temperature sensor 7 electric resistance structure figures, form heater strip 6, temperature sensor 7 thermo-sensitive resistor structures;
6. adopt anisotropic silicon wet corrosion technique corrosion monocrystalline silicon piece 2, monocrystalline silicon piece 2 corrosion processing form inner chamber body 1 structure, heater strip 6 on silicon nitride film or the silicon dioxide film 8, temperature sensor 7 form tube core structure by silicon nitride film or silicon dioxide film 8 unsettled being fixed on the inner chamber body 1;
7. tube core structure on shell 4 bottom surfaces, forms outer chamber 3 with conductive adhesive between monocrystalline silicon piece 2 and shell 4 and the shell cap 5;
8. with store energy welding shell cap 5 is encapsulated on the shell 4, during encapsulating shell cap 5, fills working gas in inner chamber body 1 and the outer chamber 3, finish the processing of miniature heat-flow accelerometer.
Miniature heat-flow accelerometer of the present invention, it comprises monocrystalline silicon piece 2, shell 4, shell cap 5, it is characterized in that also comprising: inner chamber body 1, outer chamber 3, heater strip 6,1 to 4 couple of temperature sensor 7-1 to 7-4, silicon nitride film or silicon dioxide film 8, testing circuit 9, wherein monocrystalline silicon piece 2 surfaces are gone up and are adopted low-pressure chemical vapor phase deposition technology or plasma reinforced chemical vapour deposition technology deposit processing one deck silicon nitride film or silicon dioxide film 8, adopt photoetching process on silicon nitride film or silicon dioxide film 8, to be processed to form heater strip 6,1 to 4 pair of temperature sensor 7-1 to 7-4 electric resistance structure figure, with magnetron sputtering technique sputter ground floor chromium or titanium adhesion layer successively on silicon nitride film or silicon dioxide film 8, the second layer metal thermo-sensitive resistor, the 3rd layer of gold layer 14, peel off heater strip 6 with ultrasonic stripping technology, adhesion layers such as ground floor chromium beyond 1 to 4 pair of temperature sensor 7-1 to the 7-4 electric resistance structure figure or titanium, the second layer metal thermo-sensitive resistor, the 3rd layer of gold layer 14, form heater strip 6, temperature sensor 7 electric resistance structure figures, fall heater strip 6 with potassium iodide wet etching solution corrosion, the 3rd layer of gold layer on temperature sensor 7 resistance patterns, form heater strip 6, temperature sensor 7 thermo-sensitive resistor structures, adopt anisotropic silicon wet etching monocrystalline silicon piece 2 to be processed to form inner chamber body 1 structure, heater strip 6, temperature sensor 7 thermo-sensitive resistor structures are by silicon nitride film or silicon dioxide film 8 unsettled being fixed on above the cavity 1, form tube core structure, tube core structure uses conductive adhesive on shell 4 bottom surfaces, form outer chamber 3 structures between monocrystalline silicon piece 2 and shell 4 and the shell cap 5, sealing cap 5 and shell 4 usefulness store energy weldings sealing are bonding; Fill working gas in the inner chamber body 1 that forms between shell 4 and the shell cap 5, the outer chamber 3, testing circuit 9 is connected with 1 to 4 couple of temperature sensor 7-1 to 7-4 by lead, and heater strip 6 is connected with constant pressure source by lead.
Testing circuit 9 of the present invention connects into bridge circuit by 1 to 4 couple of temperature sensor 7-1 to 7-4, differential amplifier 10, constant pressure source 11, constant current source 12 constitutes, wherein two pairs of temperature sensors 7 constitute one group of bridge circuit, constant pressure source 11 two ends are connected to form thermal field with heater strip 6 two ends respectively, constant current source 12 1 ends and temperature sensor 7-1 go into to hold 1 pin or temperature sensor 7-3 to go into to hold 5 pin and temperature sensor 7-2 to go into to hold 12 pin or temperature sensor 7-4 to go into end 13 pin and connect, constant current source 12 other ends and temperature sensor 7-1 go into to hold 3 pin or temperature sensor 7-3 to go into to hold 7 pin and temperature sensor 7-2 to go into to hold 10 pin or temperature sensor 7-4 to go into end 15 pin and connect, temperature sensor 7-1 goes into end 4 pin or temperature sensor 7-3 and goes into end 8 pin and temperature sensor 7-2 and go into end 11 pin or temperature sensor 7-4 and go into end 14 pin and go into to hold 2 pin with differential amplifier 10 and connect, temperature sensor 7-2 goes into end 9 pin or temperature sensor 7-4 and goes into end 16 pin and temperature sensor 7-1 and go into end 2 pin or temperature sensor 7-3 and go into end 6 pin and go into end 1 pin with differential amplifier 10 and connect, and differential amplifier 10 goes out to hold 3 pin external-connected port A, go into end 4 pin earth terminals, go into to hold 5 pin to connect power supply and go into end+V voltage end.
The present invention compares background technology and has following advantage:
1. the present invention adopts four pairs or the two pairs of temperature sensors to constitute twin shaft or single-axis accelerometer, and the consistency of performance of diaxon is fine, and cross-couplings is less than 1 ‰.
2. the accelerometer no-movable part of the present invention's manufacturing has high impact resistance, can reach the impact strength of material itself, and impact strength is greater than 50000g.
3. the present invention adopts micromachined technology to make, and it is little, in light weight, simple in structure therefore to have a volume, the simple and easy maturation of production technology, and processed finished products rate height, cost is low, is convenient to produce in batches.
Description of drawings
Fig. 1 is a twin-axis accelerometer master TV structure synoptic diagram of the present invention.
Fig. 2 is the plan structure synoptic diagram of twin-axis accelerometer front view of the present invention.
Fig. 3 is the electrical schematic diagram of testing circuit 9 of the present invention.
Fig. 4 is a manufacture craft flow process chart of the present invention.
Fig. 5 is the thermocouple structure synoptic diagram of temperature sensor 7 of the present invention.
Fig. 6 is a single-axis accelerometer structural representation of the present invention.
Embodiment
Referring to figs. 1 through Fig. 6, the invention process method comprises step (as Fig. 4):
(1) on monocrystalline silicon piece 2, adopts low-pressure chemical vapor phase deposition technology or the plasma reinforced chemical vapour deposition technology deposit one deck silicon nitride film or the silicon dioxide film 8 of general chemical vapor deposition device, (as Fig. 4-1).Embodiment adopts low-pressure chemical vapor phase deposition technology deposit one deck silicon nitride film.
(2) on silicon nitride film or silicon dioxide film 8, be coated with the positive glue AZ1500 of one deck type photoresist 13, adopt the photoetching process photoetching formation heater strip 6 of general litho machine, the electric resistance structure figure of temperature sensor 7, (as Fig. 4-2) with glue spreader.
(3) with magnetron sputtering technique sputter ground floor chromium or titanium adhesion layer, second layer metal thermo-sensitive resistor, the 3rd layer of gold layer 14 successively on photoresist 13, silicon nitride film or silicon dioxide film 8, (as Fig. 4-3).Embodiment sputter ground floor chromium layer, sputter second layer platinum layer on the ground floor chromium layer is as the resistive layer of heater strip 6 and temperature sensor 7.
(4) monocrystalline silicon 2 is put into the alcohol container, adopt ultrasonic stripping technology to peel off adhesion layer, second layer metal thermo-sensitive resistor, the 3rd layer of gold layer 14 such as ground floor chromium beyond the electric resistance structure figure of heater strip 6 and temperature sensor 7 or titanium, form heater strip 6, temperature sensor 7 electric resistance structure figures, (as Fig. 4-4), embodiment adopt ultrasonic technology to peel off ground floor chromium layer, second layer platinum layer, the 3rd layer of gold layer 14.
(5) photoetching process and the liquor kalii iodide wet corrosion technique of the general litho machine of employing erode the 3rd layer of gold layer on heater strip 6, the temperature sensor 7 electric resistance structure figures, form heater strip 6, temperature sensor 7 thermo-sensitive resistor structures.
(6) adopt the anisotropic silicon wet corrosion technique of potassium hydroxide solution to corrode monocrystalline silicon piece 2, monocrystalline silicon piece 2 corrosion processing form inner chamber body 1 structure, heater strip 6 on silicon nitride film or the silicon dioxide film 8, temperature sensor 7 form tube core structure (as Fig. 4-5) by silicon nitride film or silicon dioxide film 8 unsettled being fixed on the inner chamber body 1.
(7) tube core structure, is put into 180 ℃ of baking ovens and was solidified 2 hours on shell 4 bottom surfaces with conductive adhesive.
(8) with store energy welding shell cap 5 is encapsulated on the shell 4, form outer chamber 3 structures between monocrystalline silicon piece 2 and shell 4 and the shell cap 5, during encapsulating shell cap 5, fill working gass in inner chamber body 1 and the outer chamber 3 and be nitrogen or helium, argon gas, xenon, krypton gas, carbon dioxide, filling working gas in the outer chamber 1,3 in the embodiment is nitrogen, finishes the processing of miniature heat-flow accelerometer.
Miniature heat-flow accelerometer of the present invention, it comprises inner chamber body 1, monocrystalline silicon piece 2, outer chamber 3, shell 4, shell cap 5, heater strip 6,1 to 4 pairs of temperature sensor 7-1 to 7-4, silicon nitride film or silicon dioxide films 8, testing circuit 9, (as Fig. 1, Fig. 2).
Testing circuit 9 of the present invention connects into bridge circuit, differential amplifier 10, constant pressure source 11, constant current source 12 by 1 to 4 couple of temperature sensor 7-1 to 7-4 and constitutes (as Fig. 3), constant pressure source 11 effects are that excitation heater strip 6 forms thermal field, the temperature variation of detected temperatures sensor 7, the output acceleration signal, Fig. 3 is the electrical schematic diagram of testing circuit 9 embodiment, and by its connection line, differential amplifier 10, constant pressure source 11, constant current source 12 embodiment self-control form.
The concise and to the point principle of work of the present invention is as follows:
Claims (8)
1. miniature heat-flow accelerometer manufacture method is characterized in that comprising step:
1. go up at monocrystalline silicon piece (2) and adopt low-pressure chemical vapor phase deposition technology or plasma reinforced chemical vapour deposition technology deposit one deck silicon nitride film or silicon dioxide film (8);
2. on silicon nitride film or silicon dioxide film (8), be coated with one deck photoresist (13), adopt the photoetching process photoetching to form the electric resistance structure figure of heater strip (6), temperature sensor (7);
3. use magnetron sputtering technique sputter ground floor chromium or titanium adhesion layer, second layer metal thermo-sensitive resistor, the 3rd layer of gold layer (14) successively on photoresist (13), silicon nitride film or silicon dioxide film (8);
4. monocrystalline silicon (2) is put into the alcohol container, adopt ultrasonic stripping technology to peel off adhesion layer, second layer metal thermo-sensitive resistor, the 3rd layer of gold layer (14) such as ground floor chromium beyond the electric resistance structure figure of heater strip (6) and temperature sensor (7) or titanium, form heater strip (6), temperature sensor (7) electric resistance structure figure;
5. adopt photoetching process and potassium iodide wet corrosion technique, erode the gold layer on heater strip (6), temperature sensor (7) the electric resistance structure figure, form heater strip (6), temperature sensor (7) thermo-sensitive resistor structure;
6. adopt anisotropic silicon wet corrosion technique corrosion monocrystalline silicon piece (2), monocrystalline silicon piece (2) corrosion processing forms inner chamber body (1) structure, heater strip (6) on silicon nitride film or the silicon dioxide film (8), temperature sensor (7) are by silicon nitride film or silicon dioxide film (8) is unsettled is fixed on the inner chamber body (1), form tube core structure;
7. tube core structure on shell (4) bottom surface, forms outer chamber (3) between monocrystalline silicon piece (2) and shell (4) and the shell cap (5) with conductive adhesive;
8. with store energy welding shell cap (5) is encapsulated on the shell (4), during encapsulating shell cap (5), fills working gas in inner chamber body (1) and the outer chamber (3), finish the processing of miniature heat-flow accelerometer.
2. miniature heat-flow accelerometer, it comprises monocrystalline silicon piece (2), shell (4), shell cap (5), it is characterized in that also comprising: inner chamber body (1), outer chamber (3), heater strip (6), 1 to 4 pair of temperature sensor (7-1) is to (7-4), silicon nitride film or silicon dioxide film (8), testing circuit (9), wherein adopt low-pressure chemical vapor phase deposition technology or plasma reinforced chemical vapour deposition technology deposit processing one deck silicon nitride film or silicon dioxide film (8) on monocrystalline silicon piece (2) surface, adopt photoetching process on silicon nitride film or silicon dioxide film (8), to be processed to form heater strip (6), 1 to 4 pair of temperature sensor (7-1) to (7-4) electric resistance structure figure, with magnetron sputtering technique sputter ground floor chromium or titanium adhesion layer successively on silicon nitride film or silicon dioxide film (8), the second layer metal thermo-sensitive resistor, the 3rd layer of gold layer (14), peel off heater strip (6) with ultrasonic stripping technology, adhesion layers such as ground floor chromium beyond 1 to 4 pair of temperature sensor (7-1) to (7-4) electric resistance structure figure or titanium, the second layer metal thermo-sensitive resistor, the 3rd layer of gold layer (14), form heater strip (6), temperature sensor (7) electric resistance structure figure, fall heater strip (6) with potassium iodide wet etching solution corrosion, the 3rd layer of gold layer on temperature sensor (7) resistance pattern, form heater strip (6), temperature sensor (7) thermo-sensitive resistor structure, adopt anisotropic silicon wet etching monocrystalline silicon piece (2) to be processed to form inner chamber body (1) structure, heater strip (6), temperature sensor (7) thermo-sensitive resistor structure is by silicon nitride film or silicon dioxide film (8) is unsettled is fixed on above the cavity (1), form tube core structure, tube core structure uses conductive adhesive on shell (4) bottom surface, form outer chamber (3) structure between monocrystalline silicon piece (2) and shell (4) and the shell cap (5), sealing cap (5) and shell (4) are bonding with the store energy welding sealing; Fill working gas in the inner chamber body (1) that forms between shell (4) and the shell cap (5), the outer chamber (3), testing circuit (9) is connected to (7-4) with 1 to 4 pair of temperature sensor (7-1) by lead, and heater strip (6) is connected with constant pressure source by lead.
3. miniature heat-flow accelerometer according to claim 2 and manufacture method thereof is characterized in that temperature sensor (7) usefulness thermo-sensitive resistor or thermocouple, thermoelectric pile making.
4. miniature heat-flow accelerometer according to claim 3 and manufacture method thereof, the metal thermo-sensitive resistor that it is characterized in that heater strip (6) and temperature sensor (7) can adopt platinum or tungsten, nickel-chrome to make, and heater strip (6) and temperature sensor (7) also can adopt the polysilicon resistance making.
5. miniature heat-flow accelerometer according to claim 4 and manufacture method thereof is characterized in that inner chamber body (1), the interior working gas employing nitrogen of filling of outer chamber (3) or helium, argon gas, xenon, krypton gas, carbon dioxide.
6. miniature heat-flow accelerometer according to claim 5 and manufacture method thereof is characterized in that heater strip (6) is made into broken line shape or rectangle, square, circular resistance wire planform.
7. miniature heat-flow accelerometer according to claim 6 and manufacture method thereof, it is characterized in that heater strip (6) upper and lower, left and right symmetry four pairs of temperature sensors of equidistant installation and processing (7) constitute the cross-compound arrangement accelerometer, or heater strip (6) symmetria bilateralis two pairs of temperature sensors of equidistant installation and processing (7) constitute the single-shaft configuration accelerometer.
8. miniature heat-flow accelerometer according to claim 7 and manufacture method thereof, it is characterized in that testing circuit (9) connects into bridge circuit by 1 to 4 pair of temperature sensor (7-1) to (7-4), differential amplifier (10), constant pressure source (11), constant current source (12) constitutes, wherein two pairs of temperature sensors (7) constitute one group of bridge circuit, constant pressure source (11) two ends are connected to form thermal field with heater strip (6) two ends respectively, constant current source (12) one ends and temperature sensor (7-1) are gone into end 1 pin or temperature sensor (7-3) and are gone into end 5 pin and temperature sensor (7-2) and go into end 12 pin or temperature sensor (7-4) and go into end 13 pin and connect, constant current source (12) other end and temperature sensor (7-1) are gone into end 3 pin or temperature sensor (7-3) and are gone into end 7 pin and temperature sensor (7-2) and go into end 10 pin or temperature sensor (7-4) and go into end 15 pin and connect, temperature sensor (7-1) is gone into end 4 pin or temperature sensor (7-3) and is gone into end 8 pin and temperature sensor (7-2) and go into end 11 pin or temperature sensor (7-4) and go into end 14 pin and go into to hold 2 pin with differential amplifier (10) and connect, temperature sensor (7-2) is gone into end 9 pin or temperature sensor (7-4) and is gone into end 16 pin and temperature sensor (7-1) and go into end 2 pin or temperature sensor (7-3) and go into end 6 pin and go into end 1 pin with differential amplifier (10) and connect, and differential amplifier (10) goes out to hold 3 pin external-connected port A, go into end 4 pin earth terminals, go into to hold 5 pin to connect power supply and go into end+V voltage end.
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| CNA031432875A CN1523360A (en) | 2003-09-10 | 2003-09-10 | Minisize heat flow accelerometer and method for making same |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101187673B (en) * | 2007-12-12 | 2010-06-02 | 美新半导体（无锡）有限公司 | Single-chip tri-axis acceleration sensor |
| CN102556942A (en) * | 2010-12-10 | 2012-07-11 | 中国科学院上海微系统与信息技术研究所 | Manufacturing method of convective acceleration sensor chip based on temperature sensitive resistor |
| CN101551403B (en) * | 2009-05-22 | 2012-09-05 | 中国科学院上海微系统与信息技术研究所 | Integrated silicon chip for testing acceleration, pressure and temperature, and manufacturing method thereof |
| CN102730621A (en) * | 2012-06-15 | 2012-10-17 | 西安交通大学 | Silicon-based micro-heating plate provided with embedded heating wire, and processing method thereof |
| CN102749473A (en) * | 2012-06-30 | 2012-10-24 | 东南大学 | Two-dimensional hot-film wind speed and direction sensor and preparation method thereof |
| CN102781124A (en) * | 2011-05-11 | 2012-11-14 | 中国科学院沈阳自动化研究所 | Wafer-baking hot plate unit used for integrated circuit |
| CN102053167B (en) * | 2009-11-10 | 2012-11-21 | 中华大学 | Hot air bubble type angular accelerometer applying radio frequency identification tag technology |
| CN103663353A (en) * | 2013-12-31 | 2014-03-26 | 中国电子科技集团公司第三研究所 | Air sound particle vibration velocity sensor and manufacturing method of air sound particle vibration velocity sensor |
| CN103675343B (en) * | 2012-08-31 | 2017-04-12 | 瑞萨电子株式会社 | Acceleration sensor |
| CN107860483A (en) * | 2017-12-26 | 2018-03-30 | 上海理好智能科技有限公司 | A kind of heating element with temperature sensor and preparation method thereof |
| CN109158753A (en) * | 2018-07-24 | 2019-01-08 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of encapsulating method of monocrystalline silicon flexure accelerometers |
| CN113759145A (en) * | 2021-09-08 | 2021-12-07 | 华东师范大学 | Thermal type wind speed and wind direction sensor and preparation method of graphene film |
| WO2022156819A1 (en) * | 2021-01-25 | 2022-07-28 | The Hong Kong University Of Science And Technology | Liquid-based cmos mems micro thermal convective accelerometer |
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2003
- 2003-09-10 CN CNA031432875A patent/CN1523360A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101187673B (en) * | 2007-12-12 | 2010-06-02 | 美新半导体（无锡）有限公司 | Single-chip tri-axis acceleration sensor |
| CN101551403B (en) * | 2009-05-22 | 2012-09-05 | 中国科学院上海微系统与信息技术研究所 | Integrated silicon chip for testing acceleration, pressure and temperature, and manufacturing method thereof |
| CN102053167B (en) * | 2009-11-10 | 2012-11-21 | 中华大学 | Hot air bubble type angular accelerometer applying radio frequency identification tag technology |
| CN102556942B (en) * | 2010-12-10 | 2014-10-22 | 中国科学院上海微系统与信息技术研究所 | Manufacturing method of convective acceleration sensor chip based on temperature sensitive resistor |
| CN102556942A (en) * | 2010-12-10 | 2012-07-11 | 中国科学院上海微系统与信息技术研究所 | Manufacturing method of convective acceleration sensor chip based on temperature sensitive resistor |
| CN102781124A (en) * | 2011-05-11 | 2012-11-14 | 中国科学院沈阳自动化研究所 | Wafer-baking hot plate unit used for integrated circuit |
| CN102781124B (en) * | 2011-05-11 | 2014-05-14 | 中国科学院沈阳自动化研究所 | Wafer-baking hot plate unit used for integrated circuit |
| CN102730621A (en) * | 2012-06-15 | 2012-10-17 | 西安交通大学 | Silicon-based micro-heating plate provided with embedded heating wire, and processing method thereof |
| CN102730621B (en) * | 2012-06-15 | 2015-05-27 | 西安交通大学 | Silicon-based micro-heating plate provided with embedded heating wire, and processing method thereof |
| CN102749473A (en) * | 2012-06-30 | 2012-10-24 | 东南大学 | Two-dimensional hot-film wind speed and direction sensor and preparation method thereof |
| CN103675343B (en) * | 2012-08-31 | 2017-04-12 | 瑞萨电子株式会社 | Acceleration sensor |
| CN103663353A (en) * | 2013-12-31 | 2014-03-26 | 中国电子科技集团公司第三研究所 | Air sound particle vibration velocity sensor and manufacturing method of air sound particle vibration velocity sensor |
| CN103663353B (en) * | 2013-12-31 | 2016-03-09 | 中国电子科技集团公司第三研究所 | A kind of air-borne sound particle vibration velocity sensor and manufacture method thereof |
| CN107860483A (en) * | 2017-12-26 | 2018-03-30 | 上海理好智能科技有限公司 | A kind of heating element with temperature sensor and preparation method thereof |
| CN109158753A (en) * | 2018-07-24 | 2019-01-08 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of encapsulating method of monocrystalline silicon flexure accelerometers |
| WO2022156819A1 (en) * | 2021-01-25 | 2022-07-28 | The Hong Kong University Of Science And Technology | Liquid-based cmos mems micro thermal convective accelerometer |
| CN113759145A (en) * | 2021-09-08 | 2021-12-07 | 华东师范大学 | Thermal type wind speed and wind direction sensor and preparation method of graphene film |
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