CN111595318A - T-shaped micro-mechanical double-shaft film gyroscope with single heat source - Google Patents
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- 238000002955 isolation Methods 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 9
- 239000007787 solid Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
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Abstract
The invention discloses a T-shaped micromechanical double-shaft thin-film gyroscope with a single heat source, which comprises a sensitive layer and a cover plate, wherein an isolation resistor, three heaters and two pairs of thermistors are arranged on the upper surface of the sensitive layer, and a T-shaped groove is etched on the lower surface of the sensitive layer; the three heaters are electrified in a periodic square wave mode; the cover plate is etched with a groove and is hermetically connected with the upper surface of the sensitive layer. The invention inherits the advantages of no solid sensitive mass block, vibration and impact resistance and the like of the micro heat flow gyroscope. The process adopted by the invention is compatible with the integrated circuit process, the driving circuit and the extraction circuit are easily manufactured on the same chip, and the potential of high integration level is realized. Because the sensitive mass of the sensor does not contain a solid mass block, compared with micro inertial sensors with other working principles, the sensor has the advantages of large impact resistance, simple structure, extremely low cost and high reliability.
Description
Technical Field
The invention relates to the technical field of detecting angular velocity attitude parameters of a moving body by utilizing a Coriolis force deflection heat flow sensitive body, in particular to a T-shaped micro-mechanical double-shaft film gyroscope with a single heat source.
Background
The Micro inertial sensor manufactured by using Micro-Electro-Mechanical-System (MEMS) technology has the advantages of mass production, low cost, small volume, low power consumption and the like, and is an ideal product of the future medium and low precision Micro inertial sensors. The gyroscope and the accelerometer are core inertial sensors for measuring and controlling the motion attitude of the carrier, and the gyroscope is a sensor sensitive to angular velocity, angular acceleration and other angular parameters. The traditional micro gyroscope (micromechanical gyroscope) is a micro rate gyroscope based on the principle of the Coriolis effect existing when a high-frequency vibrating mass is driven to rotate by a base, and micro-electronics and a micro machine are combined. The solid mass block in the gyro sensitive element needs to be suspended and vibrated through a mechanical elastic body, is easy to damage under slightly high acceleration impact, and simultaneously needs vacuum packaging for reducing damping, has complex process and can generate fatigue damage and vibration noise when working for a long time. The micro fluid inertia device is a novel device for measuring input acceleration and angular velocity by detecting the flow field offset of fluid in a closed cavity. Because the movable part and the suspension system in the traditional miniature gyro are not provided, the high overload can be resisted; the sensitive mass of the gas sensor is gas, and the mass is almost zero, so the response time is short and the service life is long; due to the simple structure, the application requirement of low cost can be met. The micro fluid gyroscope is an angular velocity sensor which utilizes the deflection of an air flow sensitive body in a closed cavity under the action of Goldson force and senses the deflection quantity caused by angular velocity by a thermistor (hot wire). At present, the market has higher and higher requirements on the capability of the micro inertial gyroscope to adapt to severe and harsh environments, and compared with the traditional micro mechanical vibration gyroscope, the micro fluid gyroscope has higher market competitiveness and very wide application prospect due to the advantages of extremely high vibration resistance and impact resistance, low cost and the like.
The micro fluid gyroscopes based on MEMS technology can be broadly classified into four types, namely micro fluidic gyroscopes, ECF (electro-coupled fluid) fluid gyroscopes, micro thermal convection gyroscopes and micro thermal flow gyroscopes. Chinese patent: a miniature four-channel circulating flow type biaxial silicon jet gyro (patent application number: 201510385582.4) belongs to a miniature jet gyro, a piezoelectric plate in a sensitive element of the miniature jet gyro increases processing difficulty and cost, and the volume of the miniature jet gyro is difficult to further reduce on the premise of keeping flow rate. ECF fluid gyroscopes are relatively large (40mm x 60mm x 7mm) and are difficult to commercialize in large volumes and at low cost because of the high kilovoltage required to form the liquid jet. The miniature thermal convection gyro cannot work without a gravity field, and the sensitivity is low. The above-described microfluidic gyros have their own inherent disadvantages that make them difficult to be the low-cost choice for commercial microfluidic gyros. The miniature heat flow gyro (also called thermal expansion gyro) is a new miniature fluid gyro which is proposed in recent years, the sensing element has no piezoelectric plate, does not need high voltage, can be used in the environment without gravity, and has moderate sensitivity, is between the miniature heat flow gyro and the miniature heat convection gyro, and simultaneously has the advantages of simple structure and processing technology, extremely low cost, high reliability and excellent vibration and impact resistance.
The sensitive working principle of the micro heat flow gyroscope is that a heater is electrified to generate joule heat to heat gas around the heater to form gas heat diffusion and generate an air flow sensitive body moving along a certain direction, and when an angular velocity is input, the air flow sensitive body deflects under the action of a Coriolis force to change a bridge arm resistor (generally composed of thermistors) of a Wheatstone bridge, so that bridge unbalanced voltage in direct proportion to the input angular velocity is output. In chinese patents 201410140298.6 and 201210130318.2, the main components in the sensor sensing element, i.e., the heater and the thermistor, both adopt a suspended cantilever beam structure, and since the heater and the thermistor are suspended above the cavity, after the cavity release structure is etched, the heater and the thermistor may be deformed or even broken by stress, the yield is low, and the warp deformation may generate an asymmetric gas flow field under the condition of no angular velocity input, thereby causing an angular velocity detection error. Therefore, how to overcome the above problems becomes a technical problem to be solved urgently by those skilled in the art.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Disclosure of Invention
The invention aims to provide a T-shaped micro-mechanical double-shaft film gyroscope with a single heat source, which aims to solve the technical problems in the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a T-shaped micromechanical double-shaft film gyroscope with a single heat source, which comprises a sensitive layer and a cover plate, wherein,
the upper surface of the sensitive layer is provided with an isolation resistor in a T-shaped structure, three heaters and three pairs of thermistors, and the lower surface of the sensitive layer is etched with a T-shaped groove;
defining the directions of two arms of the T-shaped groove as X and Y directions respectively, and the height direction of the sensitive layer as Z direction; the arrangement directions of the heater and the thermistor are parallel or vertical to the X or Y direction; the two pairs of thermistors are arranged oppositely in pairs and are respectively used for detecting the angular speeds of an X axis and a Y axis;
a pair of thermistors for detecting the X axis are arranged on the left side of the T-shaped structure, are parallel to the X direction and are vertical to the Y direction; a pair of thermistors for detecting the Y axis are arranged on the right side of the T-shaped structure, are parallel to the Y direction and are vertical to the X direction;
the middle of two thermistors for detecting the X axis is provided with one isolating resistor, and two sides of the two thermistors are respectively provided with one heater; the heater is arranged in the middle of the T-shaped structure;
the three heaters are electrified in a periodic square wave mode, namely one working period of the heaters comprises pulse voltage excitation time and power-off interval time;
and the cover plate is etched with a groove and is hermetically connected with the upper surface of the sensitive layer.
As a further technical scheme, each heater is driven by a square wave signal with the same frequency, the frequency is 18Hz, the pulse duty ratio is 50%, and the heating power of the heater is 70 mW.
As a further technical scheme, the outer edge of the T-shaped groove is larger than the outer contours of the upper surface heater and the thermistor.
As a further technical scheme, the depth of the T-shaped groove is 2/3-3/4 of the height of the whole sensitive layer.
As a further technical scheme, the distance from the upper surface of the sensitive layer to the top of the groove on the cover plate is the height of the gas medium working cavity, and the height is 200-1000 μm.
As a further technical scheme, the height of the heater on the upper surface of the sensitive layer is 15-20 μm.
As a further technical scheme, the height of the thermistor on the upper surface of the sensitive layer is 95-100 μm.
As a further technical scheme, the height of the isolation resistor on the upper surface of the sensitive layer is 200-210 μm.
As a further technical scheme, the distance between the heater and the thermistor for detecting the angular speed of X, Y in the axial direction is 1/3-1/2 of the length of the heater.
As a further technical scheme, the heaters are all made of TaN material resistance wires with high temperature coefficients.
As a further technical scheme, the thermistors are all formed by n-type heavily doped GaAs material resistance wires.
By adopting the technical scheme, the invention has the following beneficial effects:
1. the gyro sensing element has no cantilever beam structure, simple process, high yield, and low cost.
2. The gas is used as sensitive mass, and the high impact resistance and the long service life are achieved.
3. The non-pressure electric pump structure has the advantages of smaller gyro structure volume, simple structure and low implementation difficulty.
4. A T-shaped groove is innovatively formed in the lower surface of the sensitive layer, so that the thickness of the sensitive layer main body is very thin, the sensitive layer main body is of a silicon thin film structure, and heat diffusion of working heat flow in the sealed cavity is facilitated.
5. The heater and the thermistor are realized on one chip, and the same structure ensures that the resistance discrete degree of the resistance wire is small, and temperature drift caused by different temperature coefficients can not be caused in one temperature field.
6. The spatial X-axis and Y-axis angular velocities can be detected simultaneously.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic three-dimensional structure diagram of a sensitive layer provided in an embodiment of the present invention;
fig. 2 is a schematic three-dimensional structure diagram of a cover plate according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a T-shaped groove structure on the lower surface of the sensitive layer according to an embodiment of the present invention;
FIG. 4 is a top view of a sensitive layer provided by an embodiment of the present invention;
FIG. 5 is a sectional view taken along line A-A of FIG. 4;
FIG. 6 is a schematic structural diagram of a heater according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a thermistor according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of the operation of an embodiment of the present invention;
FIG. 9 is a flow chart of a fabrication process provided by an embodiment of the present invention;
icon: the resistor comprises a 1-sensitive layer, a 2-cover plate, a 3-T-shaped groove, a 4-heater, a 5-heater, a 6-heater, a 7-thermistor, an 8-thermistor, a 9-thermistor, a 10-thermistor, an 11-isolation resistor, a 12-TaN material resistor block, a 13-TaN material resistor block, a 14-n type heavily doped GaAs material resistor block and a 15-n type heavily doped GaAs material resistor block.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Referring to fig. 1-5, the present embodiment provides a single heat source "T" shaped micromechanical biaxial film gyroscope, which includes a sensitive layer 1 and a cover plate 2, wherein,
the upper surface of the sensitive layer 1 is provided with an isolation resistor in a T-shaped structure, three heaters and two pairs of thermistors, and the lower surface of the sensitive layer 1 is etched with a T-shaped groove 3;
defining the directions of two arms of the T-shaped groove as X and Y directions respectively, and the height direction of the sensitive layer as Z direction; the arrangement directions of the heater and the thermistor are parallel or vertical to the X or Y direction; the two pairs of thermistors are arranged oppositely in pairs and are respectively used for detecting the angular speeds of an X axis and a Y axis;
a thermistor 7 and a thermistor 8 for detecting the X axis are arranged on the left side of the T-shaped structure, are parallel to the X direction and are vertical to the Y direction; the thermistor 9 and the thermistor 10 for detecting the Y axis are arranged on the right side of the T-shaped structure, are parallel to the Y direction and are vertical to the X direction;
an isolation resistor, namely an isolation resistor 11, is arranged in the middle of the two thermistors for detecting the X axis, and heaters, namely a heater 4 and a heater 5, are respectively arranged on two sides of the two thermistors; a heater, namely a heater 6 is arranged in the middle of the T-shaped structure;
the three heaters are electrified in a periodic square wave mode, namely one working period of the heaters comprises pulse voltage excitation time and power-off interval time;
the electrifying mode of the thermistor is constant current;
and a groove is etched in the cover plate 2 and is hermetically connected with the upper surface of the sensitive layer 1.
In the embodiment, as a further technical solution, as shown in fig. 8, each of the heaters is driven by a square wave signal with the same frequency, the frequency is 18Hz, the pulse duty ratio is 50%, and the heating power of the heater is 70 mW. The heater is electrified to generate Joule heat, releases heat to surrounding gas, and conducts heat diffusion to form three T-shaped distributed oscillation heat flows. The gyro has the advantages of large heat flow rate, stable airflow state, high gyro sensitivity and good stability. The heat flows emitted by the heater 4 and the heater 5 are isolated by the isolating resistor 11, the heater, the thermistor and the heat insulation resistor are not coplanar with each other, the plane of the thermistor is dozens of micrometers higher than the plane of the heater, and the plane of the isolating resistor is dozens of micrometers higher than the plane of the thermistor. When the gyroscope is operated, if the angular velocity Ω X is input in the X-axis direction, the heat flows from the heater 4 and the heater 5 reach the two relatively parallel thermistors 7 and 8 in opposite directions in the ZOY plane due to the coriolis force principle, and opposite heating effects are also formed in the plane formed by the thermistors, and a temperature difference proportional to the input angular velocity Ω X is generated between the two relatively parallel thermistors 7 and 8. If a sensitive angular velocity Ω Y is input in the Y-axis direction, the heat flow from the heater 6 is deflected in the ZOX plane due to the coriolis force principle, and the two thermistors 9 and 10 arranged in the air flow path in the back-and-forth order are heated in opposition, and the two thermistors 9 and 10 arranged in parallel generate a temperature difference proportional to the input angular velocity Ω Y. Two pairs of thermistors 7 and 8, 9 and 10 are connected respectively to the two equal arms of a wheatstone bridge, and the heating of the heater causes a change in the resistance of the thermistors, which is converted by the wheatstone bridge into two outputs of voltages Vx, Vy proportional to the angular velocities Ω x, Ω y, and thus sensitive to the angular velocities in the two orthogonal directions (X, Y).
In the embodiment, as a further technical scheme, the outer edge of the T-shaped groove 3 is larger than the outer contours of the upper surface heater and the thermistor to form a thin film structure, so that the heat diffusion of the gas medium in the sealed cavity is increased.
In this embodiment, as a further technical solution, the depth of the T-shaped groove 3 is 2/3 to 3/4 of the height of the whole sensitive layer 1.
In this embodiment, as a further technical solution, the distance from the upper surface of the sensitive layer 1 to the top of the groove on the cover plate 2 is the height of the gas medium working cavity, and the height is 200 μm to 1000 μm.
In this embodiment, as a further technical solution, the height of the heater on the upper surface of the sensitive layer 1 is 15 μm to 20 μm.
In this embodiment, as a further technical solution, the height of the thermistor on the upper surface of the sensitive layer 1 is 95 μm to 100 μm.
In this embodiment, as a further technical solution, the height of the isolation resistor on the upper surface of the sensitive layer 1 is 200 μm to 210 μm.
In this embodiment, as a further technical solution, the distance between the heater and the thermistor for detecting the angular velocity of X, Y in the axial direction is 1/4 to 1/3 of the length of the heater.
In this embodiment, as a further technical solution, the heaters are made of resistive wires of TaN material with high temperature coefficient, as shown in fig. 6-7. The thermistors are all composed of n-type heavily doped GaAs material resistance wires. Wherein the heater comprises 2 symmetrical resistive blocks 12, 13 of TaN material. The TaN material resistance block 12 is composed of 4 series-connected resistors, and each resistor is specifically realized in the form of 4 parallel TaN material resistance lines with high temperature coefficients. By designing the TaN material resistance wire in this way, the heater can generate more heat, thereby being beneficial to improving the sensitivity of gyro detection. The thermistor comprises 2 symmetrical resistive blocks 14, 15 of heavily n-doped GaAs material. The n-type heavily doped GaAs material resistance block 14 is composed of 4 series-connected resistors, and each resistor is specifically realized in the form of 4 n-type heavily doped GaAs material resistance lines connected in parallel. By designing the GaAs material resistance wire in such a way, the thermistor can obtain larger voltage signal output, thereby being beneficial to improving the sensitivity of gyro detection.
Referring to fig. 9, the T-shaped micromechanical biaxial film gyroscope disclosed by the present invention can be prepared by using GaAs-MMIC technology, and the specific process flow is as follows:
step (a): preparation of doping Density of 10 on GaAs wafer18cm-3And etching the n + GaAs epitaxial layer to form the thermistor.
Step (b): a TaN (tantalum nitride) layer is sputtered as a heater (heating resistor).
Step (c): respectively sputtering Ti/Au/Ti, photoetching and etching to form
Thick pads and connecting wires.
Step (d): using plasma enhanced chemical vapor deposition (PE)CVD) technique preparation
Thick Si3N4As a separate layer.
A step (e): a 2 μm thick gold layer was electroplated on the second layer.
Step (f): and back etching to form a substrate MEMS membrane, wherein the thickness of the MEMS membrane is close to 20 mu m.
In conclusion, the invention inherits the advantages of no solid sensitive mass block, vibration resistance, impact resistance and the like of the micro heat flow gyroscope, the gyroscope sensitive element has no cantilever beam structure, the process is simple, the yield of the sensitive element is high, and the cost is low because the sensitive element can be produced in batch. A T-shaped groove is innovatively formed in the lower surface of the sensitive layer, so that the thickness of the sensitive layer main body is very thin, the sensitive layer main body is of a silicon thin film structure, and heat diffusion of working heat flow in the sealed cavity is facilitated. The process adopted by the invention is compatible with the integrated circuit process, the driving circuit and the extraction circuit are easily manufactured on the same chip, and the potential of high integration level is realized. Because the sensitive mass of the sensor does not contain a solid mass block, compared with micro inertial sensors with other working principles, the sensor has the advantages of large impact resistance, simple structure, extremely low cost and high reliability.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A T-shaped micromechanical biaxial film gyroscope with a single heat source is characterized by comprising a sensitive layer and a cover plate, wherein,
the upper surface of the sensitive layer is provided with an isolation resistor in a T-shaped structure, three heaters and two pairs of thermistors, and the lower surface of the sensitive layer is etched with a T-shaped groove;
defining the directions of two arms of the T-shaped groove as X and Y directions respectively, and the height direction of the sensitive layer as Z direction; the arrangement directions of the heater and the thermistor are parallel or vertical to the X or Y direction; the two pairs of thermistors are arranged oppositely in pairs and are respectively used for detecting the angular speeds of an X axis and a Y axis;
a pair of thermistors for detecting the X axis are arranged on the left side of the T-shaped structure, are parallel to the X direction and are vertical to the Y direction; a pair of thermistors for detecting the Y axis are arranged on the right side of the T-shaped structure, are parallel to the Y direction and are vertical to the X direction;
the middle of two thermistors for detecting the X axis is provided with one isolating resistor, and two sides of the two thermistors are respectively provided with one heater; the heater is arranged in the middle of the T-shaped structure;
the three heaters are electrified in a periodic square wave mode, namely one working period of the heaters comprises pulse voltage excitation time and power-off interval time;
and the cover plate is etched with a groove and is hermetically connected with the upper surface of the sensitive layer.
2. The single heat source "T" -shaped micromachined biaxial film gyroscope of claim 1, wherein each of the heaters is driven by a square wave signal of the same frequency, the frequency is 18Hz, the pulse duty cycle is 50%, and the heater heating power is 70 mW.
3. The single heat source "T" -shaped micromechanical biaxial film gyroscope of claim 1, wherein the outer edges of the "T" -shaped grooves are larger than the outer contours of the upper surface heater and the thermistor.
4. The single heat source "T" -shaped micromachined biaxial film gyroscope of claim 1, wherein the depth of the "T" -shaped groove is 2/3 to 3/4 of the entire sensitive layer height.
5. The single heat source "T" shaped micromechanical biaxial film gyroscope of claim 1, wherein the distance from the upper surface of the sensitive layer to the top of the upper groove of the cover plate is the height of the working cavity of the gas medium, and the height is 200 μm to 1000 μm.
6. The single heat source "T" -shaped micromachined biaxial film gyroscope of claim 1, wherein the height of the heater on the upper surface of the sensitive layer is 15 μ ι η to 20 μ ι η.
7. The single heat source "T" -shaped micromechanical biaxial film gyroscope of claim 1, wherein the height of the thermistor on the upper surface of the sensitive layer is 95 μ ι η to 100 μ ι η.
8. The single heat source "T" -shaped micromechanical biaxial film gyroscope of claim 1, wherein the height of the isolation resistor at the upper surface of the sensitive layer is 200 μ ι η to 210 μ ι η.
9. The single heat source "T" shaped micromachined biaxial film gyroscope of claim 1 wherein the spacing between the heater and the thermistor to sense X, Y axial angular velocity is 1/4 to 1/3 the length of the heater.
10. The single heat source "T" -shaped micromechanical biaxial film gyroscope of claim 1, wherein the heaters are each composed of a resistive wire of TaN material with a high temperature coefficient; the thermistors are all composed of n-type heavily doped GaAs material resistance wires.
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| CN113124845A (en) * | 2021-05-21 | 2021-07-16 | 北京信息科技大学 | Full-bridge double-push-pull flow z-axis film gyroscope and processing method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6378369B1 (en) * | 1999-01-06 | 2002-04-30 | Murata Manufacturing Co., Ltd | Angular velocity sensor |
| US20070062282A1 (en) * | 2005-09-07 | 2007-03-22 | Hitachi, Ltd. | Combined sensor and its fabrication method |
| CN101071066A (en) * | 2007-06-01 | 2007-11-14 | 北京沃尔康科技有限责任公司 | Gas pendulum inertia sensor |
| CN101593863A (en) * | 2009-06-26 | 2009-12-02 | 北京信息科技大学 | A kind of adjustable microwave band-pass filter |
| CN103900544A (en) * | 2014-04-09 | 2014-07-02 | 西北工业大学 | MEMS three-axis gyroscope based on thermal expansion flow and machining method thereof |
| CN106052669A (en) * | 2016-06-08 | 2016-10-26 | 北京信息科技大学 | High-precision double-pump and double-shaft micro circular jet flow gyroscope |
| CN106441254A (en) * | 2016-08-31 | 2017-02-22 | 歌尔股份有限公司 | MEMS three-axis inertial sensor based on thermal expansion airflow and processing method thereof |
| US20170248422A1 (en) * | 2016-02-29 | 2017-08-31 | The Regents Of The University Of Michigan | Gyroscope And Fabrication Process |
| CN212082392U (en) * | 2020-06-24 | 2020-12-04 | 北京信息科技大学 | T-shaped micro-mechanical double-shaft film gyroscope with single heat source |
-
2020
- 2020-06-24 CN CN202010584358.9A patent/CN111595318B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6378369B1 (en) * | 1999-01-06 | 2002-04-30 | Murata Manufacturing Co., Ltd | Angular velocity sensor |
| US20070062282A1 (en) * | 2005-09-07 | 2007-03-22 | Hitachi, Ltd. | Combined sensor and its fabrication method |
| CN101071066A (en) * | 2007-06-01 | 2007-11-14 | 北京沃尔康科技有限责任公司 | Gas pendulum inertia sensor |
| CN101593863A (en) * | 2009-06-26 | 2009-12-02 | 北京信息科技大学 | A kind of adjustable microwave band-pass filter |
| CN103900544A (en) * | 2014-04-09 | 2014-07-02 | 西北工业大学 | MEMS three-axis gyroscope based on thermal expansion flow and machining method thereof |
| US20170248422A1 (en) * | 2016-02-29 | 2017-08-31 | The Regents Of The University Of Michigan | Gyroscope And Fabrication Process |
| CN106052669A (en) * | 2016-06-08 | 2016-10-26 | 北京信息科技大学 | High-precision double-pump and double-shaft micro circular jet flow gyroscope |
| CN106441254A (en) * | 2016-08-31 | 2017-02-22 | 歌尔股份有限公司 | MEMS three-axis inertial sensor based on thermal expansion airflow and processing method thereof |
| CN212082392U (en) * | 2020-06-24 | 2020-12-04 | 北京信息科技大学 | T-shaped micro-mechanical double-shaft film gyroscope with single heat source |
Non-Patent Citations (3)
| Title |
|---|
| CHENLEI CHU等: "RF MEMS THERMISTOR POWER SENSOR BASED ON WHEATSTONE FULL-BRIDGE STRUCTURE", 2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS), 17 October 2019 (2019-10-17), pages 891 - 894 * |
| HU, YH等: "Effect of Gas on Sensitivity of Thermal Expansion Fluid Gyroscope", PROCEEDINGS OF 2018 IEEE 4TH INFORMATION TECHNOLOGY AND MECHATRONICS ENGINEERING CONFERENCE (ITOEC 2018), 21 June 2019 (2019-06-21), pages 1640 - 1643 * |
| 凤瑞: "微型热膨胀式流体陀螺及其关键技术研究", 中国博士学位论文全文数据库 (信息科技辑), 15 June 2016 (2016-06-15), pages 140 - 22 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113124845A (en) * | 2021-05-21 | 2021-07-16 | 北京信息科技大学 | Full-bridge double-push-pull flow z-axis film gyroscope and processing method thereof |
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