CN115296636A - Preparation method of acoustic wave resonator, structure of acoustic wave resonator and filter - Google Patents
Preparation method of acoustic wave resonator, structure of acoustic wave resonator and filter Download PDFInfo
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- CN115296636A CN115296636A CN202210308897.9A CN202210308897A CN115296636A CN 115296636 A CN115296636 A CN 115296636A CN 202210308897 A CN202210308897 A CN 202210308897A CN 115296636 A CN115296636 A CN 115296636A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The application relates to the field of resonator preparation, and provides a preparation method of an acoustic wave resonator, a structure of the acoustic wave resonator and a filter of the acoustic wave resonator. This application is at regional electrically conductive carborundum layer of support substrate preparation as bottom electrode, and be in the suspension potential state, the device only need apply suitable excitation signal on top electrode at the during operation, compare in traditional FBAR structure and need not to etch out the through-hole with piezoelectric film in order to draw forth bottom electrode, it is simpler to make the domain, and can obtain higher resonant frequency, bigger electromechanical coupling coefficient, littleer loss, can improve the heat dispersion of device, promote the power capacity of device.
Description
Technical Field
The invention relates to the technical field of resonator preparation, in particular to a preparation method of an acoustic wave resonator, a structure of the acoustic wave resonator and a filter.
Background
The core structure of a Film Bulk Acoustic Resonator (FBAR) is a sandwich structure of "electrode-piezoelectric material-electrode", and bulk waves propagating and vibrating in the thickness direction can be generated in a resonant structure by applying appropriate excitation signals to upper and lower electrodes. The FBAR may be classified into a bulk silicon etching structure FBAR and a cavity structure FBAR according to a process characteristic of a Micro-Electro-Mechanical System (MEMS). The typical manufacturing process flow of the bulk silicon etching structure FBAR is that a low-stress silicon nitride Si3N4 film layer is used as a stop layer for etching a silicon substrate, and after the resonance structure film layer on the surface of the silicon substrate is completely deposited, a part of the silicon substrate is removed from the back of the silicon substrate by adopting an MEMS bulk silicon micro-manufacturing technology to form a suspended structure. The typical manufacturing process flow of the cavity structure FBAR is to perform photolithography and etching when each layer of the resonant structure film layer grows on the surface of the silicon substrate to obtain an etching window exposing the sacrificial layer, and then release the sacrificial layer to obtain the cavity structure.
Because the FBAR structure applies an excitation signal to the upper and lower electrodes to excite acoustic wave propagation, a piezoelectric thin film layer in a film layer of the resonant structure needs to be etched to form a through hole so as to lead out the lower electrode, so that the manufacturing layout of the resonator is complex, and double-layer layout wiring is needed when a filter is formed, so that the parasitic capacitance and transmission loss of the filter are increased.
Disclosure of Invention
The embodiment of the application provides a preparation method of an acoustic wave resonator, a structure thereof and a filter, wherein regionalized conductive SiC is used as a supporting layer and a bottom electrode and is in a suspension potential state, only a proper excitation signal needs to be applied to a top electrode, and compared with the traditional FBAR structure, the piezoelectric film is not required to be etched with a through hole to lead out the bottom electrode, the manufacturing layout is simpler, higher resonant frequency can be obtained, larger electromechanical coupling coefficient and smaller loss are obtained, in addition, the heat conductivity coefficient of SiC is superior to that of the supporting layer material and the metal bottom electrode material of the traditional FBAR structure, the heat radiation performance of the device is more excellent, and the power capacity is improved.
The embodiment of the application provides a preparation method of an acoustic wave resonator, which comprises the following steps:
obtaining a support substrate;
preparing a first electrode layer on a support substrate; the material of the first electrode layer is silicon carbide;
regionalizing the first electrode layer such that the first electrode layer is divided into a conductive region and an insulating region;
preparing a piezoelectric film on the first electrode layer;
and preparing a second electrode layer in the area corresponding to the conductive area on the piezoelectric film to obtain the acoustic wave resonator.
Further, the regionalizing the first electrode layer such that the first electrode layer is divided into a conductive region and an insulating region includes:
if the material of the first electrode layer is a conductive material, the first electrode layer is subjected to regional insulation treatment, so that the first electrode layer is divided into a conductive region and an insulation region.
Further, the regionalizing the first electrode layer such that the first electrode layer is divided into a conductive region and an insulating region includes:
if the material of the first electrode layer is an insulating material, conducting regional conducting treatment on the first electrode layer to enable the first electrode layer to be divided into a conducting region and an insulating region; the regionalized conductive treatment includes ion implantation and thermal diffusion.
Further, the support substrate includes a first surface and a second surface, the first surface and the second surface being disposed opposite to each other;
preparing a first electrode layer on a support substrate, comprising:
depositing a stop layer on both the first surface and the second surface of the support substrate;
etching the supporting substrate from the stop layer on the second surface to obtain a suspended structure to be processed;
a first electrode layer is prepared on the first surface of the support substrate from the stop layer on the first surface.
Further, preparing a second electrode layer in a region corresponding to the conductive region on the piezoelectric film to obtain the acoustic wave resonator, including:
preparing a second electrode layer in a region corresponding to the conductive region on the piezoelectric film;
etching the suspension structure to be processed from the stop layer on the second surface to obtain the acoustic wave resonator;
further, the support substrate includes a first surface and a second surface, the first surface and the second surface being disposed opposite to each other;
preparing a first electrode layer on a support substrate, comprising:
etching the first surface of the support substrate to obtain a groove;
preparing a sacrificial layer on the supporting substrate from the groove;
and polishing the sacrificial layer, and preparing a first electrode layer on the polished sacrificial layer.
Further, preparing a second electrode layer on the piezoelectric film in a region corresponding to the conductive region to obtain the acoustic wave resonator, including:
preparing a second electrode layer in a region corresponding to the conductive region on the piezoelectric film;
and releasing the sacrificial layer to form a cavity structure between the support substrate and the first electrode layer to obtain the acoustic wave resonator.
Correspondingly, the embodiment of the present application further provides a structure of an acoustic wave resonator, including:
a support substrate;
a first electrode layer disposed on the support substrate; the first electrode layer is made of silicon carbide and comprises a conductive area and an insulating area, the conductive area is suspended, and part of the insulating area is arranged on the supporting substrate;
a piezoelectric thin film disposed on the first electrode layer;
and the second electrode layer is arranged on the area corresponding to the conductive area on the piezoelectric film.
Correspondingly, the embodiment of the present application further provides a structure of an acoustic wave resonator, including:
a support substrate;
a first electrode layer disposed on the support substrate; the first electrode layer is made of silicon carbide and comprises a conductive area and an insulating area, and a cavity structure is formed between part of the suspended conductive area and the insulating area and the supporting substrate;
a piezoelectric thin film disposed on the first electrode layer;
and the second electrode layer is arranged on the area corresponding to the conductive area on the piezoelectric film.
Correspondingly, the embodiment of the present application further provides a filter, including: a plurality of the above resonators; the plurality of resonators are cascaded, bridged or coupled based on a predetermined topology.
The embodiment of the application has the following beneficial effects:
the preparation method of the acoustic wave resonator comprises the steps of obtaining a supporting substrate, preparing a first electrode layer on the supporting substrate, wherein the first electrode layer is made of silicon carbide, conducting regionalization treatment on the first electrode layer to enable the first electrode layer to be divided into a conducting region and an insulating region, preparing a piezoelectric film on the first electrode layer, and preparing a second electrode layer on the piezoelectric film in a region corresponding to the conducting region to obtain the acoustic wave resonator. Based on this application embodiment through preparing regional electrically conductive carborundum layer at the support substrate as the bottom electrode to be in the suspension potential state, the device only need apply excitation signal on the top electrode at the during operation, compare in traditional FBAR structure and need not to etch out the through-hole with piezoelectric film in order to draw forth the bottom electrode, and can obtain higher resonant frequency, bigger electromechanical coupling coefficient, less loss. Meanwhile, the characteristic that the heat conductivity coefficient of the conductive silicon carbide layer is higher than that of the metal bottom electrode material is utilized, so that the heat dissipation performance of the device can be improved, and the power capacity of the device can be improved.
Drawings
In order to more clearly illustrate the technical solutions and advantages of the embodiments of the present application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a first schematic flow chart of a method for manufacturing an acoustic wave resonator according to an embodiment of the present disclosure;
fig. 2 is a schematic flow diagram of a second method for manufacturing an acoustic wave resonator according to an embodiment of the present disclosure;
fig. 3 is a third schematic flowchart of a method for manufacturing an acoustic wave resonator according to an embodiment of the present disclosure;
FIG. 4 is a graph illustrating admittance simulations of resonators having different thicknesses of silicon carbide as provided by embodiments of the present application;
FIG. 5 is a graph of admittance simulations for resonators with top electrodes of different thicknesses as provided by embodiments of the present application;
FIG. 6 is a top view of a top electrode provided by an embodiment of the present application;
FIG. 7 is a graph of admittance simulations of resonators with different areas of the top electrode provided by embodiments of the present application;
fig. 8 is a first structural diagram of an acoustic wave resonator according to an embodiment of the present application;
fig. 9 is a schematic structural diagram ii of an acoustic wave resonator according to an embodiment of the present application;
fig. 10 is a schematic structural diagram of an acoustic wave resonator according to an embodiment of the present application;
fig. 11 is a schematic structural diagram of an acoustic wave resonator according to an embodiment of the present application;
fig. 12 is a schematic structural diagram five of an acoustic wave resonator provided in an embodiment of the present application;
fig. 13 is a sixth schematic structural diagram of an acoustic wave resonator according to an embodiment of the present application;
fig. 14 is a schematic diagram of a topology of a ladder filter according to an embodiment of the present application;
fig. 15 is a schematic structural diagram of a ladder filter based on the one shown in fig. 14 according to an embodiment of the present application;
FIG. 16 is a graph of admittance simulation of example 1 and comparative example 1 provided in the examples of the present application;
FIG. 17 is a graph showing steady-state temperature simulation results of example 1 and comparative example 1 provided in the examples of the present application;
fig. 18 is a graph of admittance simulation of example 1 and comparative example 2 provided in the examples of the present application.
Detailed Description
To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings. It should be apparent that the described embodiment is only one embodiment of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
An "embodiment" as referred to herein relates to a particular feature, structure, or characteristic that may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it should be understood that the terms "upper", "lower", "left", "right", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only used for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices/systems or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be taken as limiting the present application. The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in other sequences than described or illustrated herein. Furthermore, the terms "comprises" and "comprising," as well as any variations thereof, are intended to cover non-exclusive inclusions.
Next, a specific embodiment of a method for manufacturing an acoustic wave resonator according to the present application is described, fig. 1 is a schematic flow diagram of a method for manufacturing an acoustic wave resonator according to the present application, fig. 2 is a schematic flow diagram of a second method for manufacturing an acoustic wave resonator, and fig. 3 is a schematic flow diagram of a third method for manufacturing an acoustic wave resonator according to the present application. The present description provides the method steps as shown in the examples or schematic illustrations, but may include more or fewer method steps based on routine or non-inventive work. The method steps listed in the examples are merely one of many method steps, and do not represent the only method steps, which can be performed in practice according to the method steps shown in the examples or the schematic diagrams.
As shown in fig. 1, 2 and 3, the method for manufacturing the acoustic wave resonator may include the following steps:
s101: a support substrate is obtained.
In the embodiment of the present application, the support substrate may be a high sound velocity substrate made of diamond, silicon carbide, or the like. The support substrate may have a first surface and a second surface, which may be oppositely disposed. In an alternative embodiment, the first surface of the support substrate may be an upper surface and the second surface of the support substrate may be a lower surface.
S103: preparing a first electrode layer on a support substrate; the material of the first electrode layer is silicon carbide.
In the embodiment of the application, the first electrode layer made of silicon nitride SiC can be prepared on the support substrate. The first electrode layer has both the supporting layer and the role as bottom electrode. In particular, the material of the support substrate may be conductive silicon carbide SiC, or may be non-conductive silicon carbide SiC.
In an alternative embodiment, as shown in fig. 2, a stop layer may be deposited on both the first surface and the second surface of the supporting substrate, then the supporting substrate is etched from the stop layer on the second surface to obtain a suspension structure to be processed, and a first electrode layer may be prepared on the first surface of the supporting substrate from the stop layer on the first surface. The material of the stop layer can be silicon carbide Si3N4, and the stop layer is used for preventing other parts of the device from being damaged by etching, so that the device is failed to be prepared.
In another alternative embodiment, as shown in fig. 3, the first surface of the supporting substrate may be subjected to an etching process to obtain a groove, then a sacrificial layer is prepared on the supporting substrate from the groove, the sacrificial layer is subjected to a polishing process, and the first electrode layer is prepared on the polished sacrificial layer.
Fig. 4 is a graph illustrating admittance simulations of resonators with different thicknesses of sic according to an embodiment of the present application, and based on fig. 4, it can be seen that if the thickness of sic is too large, the resonant frequency and the electromechanical coupling coefficient of the resonator are reduced more. Alternatively, the thickness Ts of the first electrode layer may satisfy Ts < 400nm.
S105: the first electrode layer is subjected to a regionalization process so that the first electrode layer is divided into a conductive region and an insulating region.
In the embodiment of the present application, the material of the electrode layer may be conductive silicon carbide SiC, and may also be non-conductive silicon carbide SiC. Therefore, if the material of the first electrode layer is a conductive material, that is, conductive silicon carbide SiC, the first electrode layer may be subjected to a regional insulation treatment so that the first electrode layer is divided into a conductive region and an insulating region. Wherein the conductive region and the insulating region may be adjacently disposed. If the material of the first electrode layer is an insulating material, i.e., non-conductive silicon carbide SiC, the first electrode layer may be subjected to a regionalized conductive treatment, so that the first electrode layer is divided into a conductive region and an insulating region. Wherein the conductive region and the insulating region may be adjacently disposed. Alternatively, the first electrode layer may be subjected to a localized conductive treatment, and a partial region of the first electrode layer may be subjected to an ion implantation treatment, so that the partial region is converted into a conductive region. A partial region of the first electrode layer may also be subjected to a thermal diffusion process, so that the partial region is converted into a conductive region.
S107: and preparing a piezoelectric film on the first electrode layer.
In the embodiment of the application, after the first electrode layer is prepared on the support substrate, the piezoelectric film may be prepared on the first electrode layer, wherein the material of the piezoelectric film may be lithium niobate, lithium tantalate, or aluminum nitride. When the piezoelectric film is made of aluminum nitride, the first electrode layer, i.e., the silicon carbide support layer, can be directly used as the epitaxial growth layer material.
S109: and preparing a second electrode layer in the area corresponding to the conductive area on the piezoelectric film to obtain the acoustic wave resonator.
As shown in fig. 2, in an alternative embodiment, after the piezoelectric film is prepared on the first electrode layer, a second electrode layer may be prepared in a region corresponding to the conductive region on the piezoelectric film, and then the suspension structure to be processed is etched from the stop layer on the second surface, so that the support substrate corresponding to the conductive region and a part of the insulating region is etched away, so that the conductive region and a part of the insulating region are exposed in the air in a suspension manner, thereby obtaining the suspension-type acoustic wave resonator.
In an alternative embodiment, the material of the second electrode layer may be at least one of aluminum, tungsten, chromium, titanium, copper, silver, molybdenum, and gold. That is, the top electrode may be made of one of the above-described metal materials, or may be made of two of the above-described metal materials. The geometric shape of the second electrode layer can be rectangular, square or irregular pentagon.
Fig. 5 is a graph showing the admittance simulation of the resonator with the top electrodes of different thicknesses according to the embodiment of the present application, and based on fig. 5, if the thickness of the second electrode layer, i.e., the top electrode, is too large, the stray modes around the main mode are more generated, and the resonant frequency of the resonator is more reduced. Alternatively, the ratio of the thickness Te of the second electrode layer to the thickness Tp of the piezoelectric thin film may satisfy Te/Tp < 0.2. Fig. 7 is a graph illustrating admittance simulation of a resonator with top electrodes of different areas according to an embodiment of the present application, and based on fig. 7, it can be seen that if the area of the second electrode layer, i.e., the top electrode, is smaller, the parasitic mode of the resonator is severe.FIG. 6 is a top view of the top electrode provided in the embodiments of the present application, wherein the second electrode layer has an area Se that can satisfy Se > 240 μm 2 。
In another alternative embodiment, as shown in fig. 3, after the piezoelectric film is prepared on the first electrode layer, a second electrode layer may be prepared on the piezoelectric film in the area corresponding to the conductive area, and the sacrificial layer is released, so that a cavity structure is formed between the support substrate and the first electrode layer, resulting in a cavity-type acoustic wave resonator.
By adopting the preparation method of acoustic wave resonance provided by the embodiment of the application, the regionalized conductive silicon carbide layer is prepared on the supporting substrate and is used as the bottom electrode, and the structure is in a suspension potential state, only an excitation signal needs to be applied to the top electrode, compared with the traditional FBAR resonator structure, a through hole does not need to be etched on the piezoelectric film to lead out the bottom electrode, and higher resonance frequency, larger electromechanical coupling coefficient and smaller loss can be obtained. Meanwhile, the characteristic that the heat conductivity coefficient of the conductive silicon carbide layer is higher than that of the metal bottom electrode material is utilized, so that the heat dissipation performance of the device can be improved, and the power capacity of the device can be improved.
Next, a specific embodiment of the structure of an acoustic wave resonator according to the present application is introduced, fig. 8 is a first structural schematic diagram of an acoustic wave resonator according to the present application, fig. 9 is a second structural schematic diagram of an acoustic wave resonator according to the present application, and fig. 10 is a third structural schematic diagram of an acoustic wave resonator according to the present application. The present description provides components as illustrated in the examples or figures, but may include more or less components based on routine or non-inventive labor. The components recited in the embodiments are merely one of many method steps and do not represent unique components that can be implemented in the embodiments or the components shown in the diagrams when actually executed.
As shown particularly in fig. 8, the acoustic wave resonator may include a support substrate, a first electrode layer, a piezoelectric film, and a second electrode layer. The material of the first electrode layer is silicon carbide SiC.
In a specific embodiment, the first electrode layer may include a conductive region and an insulating region, wherein the conductive region and the insulating region may be disposed adjacent to each other, the conductive region may be exposed to air in the air, and a partial region of the insulating region may be disposed on the supporting substrate. The second electrode layer may be disposed on a region of the piezoelectric film corresponding to the conductive region.
In another embodiment, as shown in fig. 9 and 10, the conductive regions in the first electrode layer and the second electrode layer may be vertically offset from each other.
By adopting the structure of the acoustic wave resonator provided by the embodiment of the application, the regional conductive SiC is used as the supporting layer and the bottom electrode and is in a suspension potential state, and only a proper excitation signal needs to be applied to the top electrode, so that the manufacturing layout is simpler as compared with the traditional FBAR structure without etching a through hole on a piezoelectric film to lead out the bottom electrode. And higher resonant frequency, larger electromechanical coupling coefficient and smaller loss can be obtained, and in addition, because the heat conductivity coefficient of SiC is superior to that of the traditional FBAR structure supporting layer material and the metal bottom electrode material, the heat dissipation performance of the device is better, and the power capacity is improved.
Next, a specific embodiment of a structure of an acoustic wave resonator according to the present application is introduced, fig. 11 is a fourth schematic structural diagram of an acoustic wave resonator according to the embodiment of the present application, fig. 12 is a fifth schematic structural diagram of an acoustic wave resonator according to the embodiment of the present application, and fig. 13 is a sixth schematic structural diagram of an acoustic wave resonator according to the embodiment of the present application. The description provides components as illustrated in the examples or figures, but may include more or less components based on routine or non-inventive labor. The components recited in the embodiments are merely one type of method step and do not represent the only components, and the components shown in the embodiments or the schematic diagrams can be executed in the actual execution.
As shown in fig. 11 in particular, the acoustic wave resonator may include a support substrate, a first electrode layer, a piezoelectric film, and a second electrode layer. The material of the first electrode layer is silicon carbide SiC.
In a specific embodiment, the first electrode layer may include a conductive region and an insulating region, wherein the conductive region and the insulating region may be disposed adjacent to each other, and a cavity structure is formed between a partial region of the conductive region and the insulating region. The second electrode layer may be disposed on a region of the piezoelectric film corresponding to the conductive region.
In another embodiment, as shown in fig. 12 and 13, the conductive regions in the first electrode layer and the second electrode layer may be vertically offset from each other.
Adopt the structure of the acoustic wave syntonizer that this application embodiment provided, utilize regional electrically conductive SiC as supporting layer and bottom electrode, and be in the suspension potential state, only need apply suitable excitation signal on the top electrode, compare in traditional FBAR structure and need not to the through-hole of piezoelectric film etching in order to draw forth the bottom electrode, and can obtain higher resonant frequency, bigger electromechanical coupling coefficient, less loss, in addition because the coefficient of heat conductivity of SiC is superior to traditional FBAR structure supporting layer material and metal bottom electrode material, the heat dispersion of device is more excellent, power capacity is promoted.
Next, a specific embodiment of a structure of a filter according to the present application is described, fig. 14 is a schematic topological structure diagram of a ladder filter according to the embodiment of the present application, and fig. 15 is a schematic structural diagram based on the ladder filter shown in fig. 14 according to the embodiment of the present application. The description provides components as illustrated in the examples or figures, but may include more or less components based on routine or non-inventive labor. The components recited in the embodiments are merely one of many method steps and do not represent unique components that can be implemented in the embodiments or the components shown in the diagrams when actually executed.
As shown in fig. 14 in particular, the filter may include a plurality of acoustic wave resonators, and each acoustic wave resonator may be a floating acoustic wave resonator as shown in fig. 8, 9, and 10, or a cavity acoustic wave resonator as shown in fig. 11, 12, and 13. The plurality of acoustic wave resonators may be cascaded, bridged, or coupled based on a predetermined topology.
It can be seen from fig. 15 that with the filter provided by the embodiment of the present application, when a plurality of acoustic wave resonators are connected to form a filter, wiring is only required on the top electrode layer, so that wiring difficulty can be reduced, wiring length can be reduced, and transmission loss and parasitic capacitance caused by too long connection length can be further weakened.
Next, taking the acoustic wave resonator shown in fig. 8 as an example, 2 comparative examples were provided to explain the performance and superiority of the acoustic wave resonator.
Example 1: the thickness of the regionalized conductive first electrode layer SiC is 180nm; the piezoelectric film is Y-cut lithium niobate, the propagation direction is parallel to the + z axis, and the thickness is 530nm; the second electrode layer was made of Al, 50nm thick, rectangular and 400 μm in area 2 。
Comparative example 1: in the conventional FBAR structure, the first electrode layer is made of Al and has an area of 400 μm 2 The thickness was 180nm, and the rest of the settings were the same as in example 1.
Comparative example 2: the SiC of the first electrode layer, which is entirely conductive, was provided in the same manner as in example 1.
Fig. 16 is an admittance simulation graph of example 1 and comparative example 1 provided in an embodiment of the present application, and based on fig. 16, it can be known that the resonant frequency of example 1 is greater than that of comparative example 1 due to the high acoustic velocity of silicon carbide SiC, and that the electromechanical coupling coefficient of example 1 is greater than that of comparative example 1 due to the structure of example 1 that can simultaneously excite the electric fields in the x direction and the z direction and can utilize the piezoelectric expansion of the electric field in the z direction and the piezoelectric expansion of the electric field in the x direction, i.e., the simulation result shown in fig. 16 confirms superiority of the acoustic wave resonator provided in the present application in the resonant frequency and the electromechanical coupling coefficient.
Fig. 17 is a schematic diagram of steady-state temperature simulation results of example 1 and comparative example 1 provided in the embodiment of the present application, and based on fig. 17, it can be known that the steady-state operating temperature of example 1 is significantly much lower than that of comparative example 1, that is, the simulation results shown in fig. 17 confirm that the heat dissipation performance of the acoustic wave resonator provided in the present application is better than that of the conventional FBAR resonator.
Fig. 18 is a graph of admittance simulation of example 1 and comparative example 2 provided in an embodiment of the present application, and based on fig. 18, it can be seen that, since the first electrode layer in example 1 includes a conductive region and an insulating region, parasitic capacitance of the device can be reduced, such that the device has a higher electromechanical coupling coefficient compared to the fully conductive first electrode layer.
As can be seen from the above embodiments of the acoustic wave resonator, the acoustic wave resonator structure, or the filter provided by the present application, the acoustic wave resonator manufacturing method includes obtaining a support substrate, manufacturing a first electrode layer on the support substrate, where the first electrode layer is made of silicon carbide, performing regionalization on the first electrode layer, so that the first electrode layer is divided into a conductive region and an insulating region, manufacturing a piezoelectric thin film on the first electrode layer, and manufacturing a second electrode layer on the piezoelectric thin film in a region corresponding to the conductive region, thereby obtaining the acoustic wave resonator. Based on this application embodiment through at regional electrically conductive carborundum layer of support substrate preparation as the bottom electrode to be in the suspension potential state, the device only needs apply excitation signal on the top electrode at the during operation, compare in traditional FBAR structure and need not to etch out the through-hole with piezoelectric film in order to draw forth the bottom electrode, it is simpler to make the domain, and can obtain higher resonant frequency, bigger electromechanical coupling coefficient, littleer loss. Meanwhile, the characteristic that the heat conductivity coefficient of the conductive silicon carbide layer is higher than that of the metal bottom electrode material is utilized, so that the heat dissipation performance of the device can be improved, and the power capacity of the device can be improved.
In the present invention, unless otherwise explicitly stated or limited, the terms "connected" and the like are to be understood broadly, and may be, for example, fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
It should be noted that: the foregoing sequence of the embodiments of the present application is for description only and does not represent the superiority and inferiority of the embodiments, and the specific embodiments are described in the specification, and other embodiments are also within the scope of the appended claims. In some cases, the actions or steps recited in the claims can be performed in the order of execution in different embodiments and achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown or connected to enable the desired results to be achieved, and in some embodiments, multitasking and parallel processing may also be possible or may be advantageous.
All the embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment is described with emphasis on differences from other embodiments. Especially, for the embodiment of the filter, since it is based on the similar method embodiment, the description is simple, and the relevant points can be referred to the partial description of the method embodiment.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A method of manufacturing an acoustic wave resonator, comprising:
obtaining a support substrate;
preparing a first electrode layer on the support substrate; the first electrode layer is made of silicon carbide;
performing regionalization on the first electrode layer so that the first electrode layer is divided into a conductive region and an insulating region;
preparing a piezoelectric film on the first electrode layer;
and preparing a second electrode layer in a region corresponding to the conductive region on the piezoelectric film to obtain the acoustic wave resonator.
2. The method according to claim 1, wherein the regionalizing the first electrode layer such that the first electrode layer is divided into a conductive region and an insulating region includes:
and if the material of the first electrode layer is a conductive material, performing regional insulation treatment on the first electrode layer to divide the first electrode layer into the conductive region and the insulation region.
3. The method according to claim 1, wherein the regionalizing the first electrode layer such that the first electrode layer is divided into a conductive region and an insulating region includes:
if the material of the first electrode layer is an insulating material, conducting regional conducting treatment on the first electrode layer to divide the first electrode layer into the conducting region and the insulating region; the regionalized conductive treatment includes ion implantation and thermal diffusion.
4. The production method according to claim 1, wherein the support substrate includes the first surface and a second surface, the first surface and the second surface being disposed oppositely;
the preparing of the first electrode layer on the support substrate includes:
depositing a stop layer on both the first surface and the second surface of the support substrate;
etching the supporting substrate from the stop layer on the second surface to obtain a suspended structure to be processed;
preparing the first electrode layer on the first surface of the support substrate from the stop layer on the first surface.
5. The method according to claim 4, wherein the step of forming a second electrode layer on the piezoelectric film in a region corresponding to the conductive region to obtain an acoustic wave resonator comprises:
preparing a second electrode layer in a region corresponding to the conductive region on the piezoelectric film;
etching the suspended structure to be processed from the stop layer on the second surface to obtain the acoustic wave resonator;
6. the production method according to claim 1, wherein the support substrate includes the first surface and a second surface, the first surface and the second surface being disposed oppositely;
the preparing a first electrode layer on the support substrate includes:
etching the first surface of the support substrate to obtain a groove;
preparing a sacrificial layer on the supporting substrate from the groove;
and polishing the sacrificial layer, and preparing the first electrode layer on the polished sacrificial layer.
7. The method according to claim 6, wherein the step of preparing a second electrode layer on the piezoelectric film in a region corresponding to the conductive region to obtain an acoustic wave resonator comprises:
preparing a second electrode layer in a region corresponding to the conductive region on the piezoelectric film;
and releasing the sacrificial layer to form a cavity structure between the support substrate and the first electrode layer to obtain the acoustic wave resonator.
8. A structure of an acoustic wave resonator, comprising:
a support substrate;
a first electrode layer disposed on the support substrate; the first electrode layer is made of silicon carbide and comprises a conductive area and an insulating area, the conductive area is suspended, and a part of area of the insulating area is arranged on the supporting substrate;
a piezoelectric thin film disposed on the first electrode layer;
and the second electrode layer is arranged on the piezoelectric film in a region corresponding to the conductive region.
9. A structure of an acoustic wave resonator, comprising:
a support substrate;
a first electrode layer disposed on the support substrate; the material of the first electrode layer is silicon carbide, the first electrode layer comprises a conductive region and an insulating region, the conductive region is suspended, and a cavity structure is formed between a partial region of the insulating region and the supporting substrate;
a piezoelectric film disposed on the first electrode layer;
and the second electrode layer is arranged on the piezoelectric film in a region corresponding to the conductive region.
10. A filter comprising a plurality of resonators, said resonators being the resonators of claim 8 or 9;
the plurality of resonators are cascaded, bridged, or coupled based on a preset topology.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117879523A (en) * | 2024-03-12 | 2024-04-12 | 华南理工大学 | Preparation system of tunable film bulk acoustic resonator |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102420582A (en) * | 2011-11-29 | 2012-04-18 | 浙江大学 | Structure of surface acoustic wave device on basis of flexible substrate and manufacturing method of surface acoustic wave device |
| CN103873010A (en) * | 2014-03-17 | 2014-06-18 | 电子科技大学 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
| US20200395911A1 (en) * | 2019-06-14 | 2020-12-17 | Skyworks Global Pte. Ltd. | Bulk acoustic wave device with floating raised frame |
| CN113708740A (en) * | 2021-09-07 | 2021-11-26 | 上海集成电路材料研究院有限公司 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
| CN113904645A (en) * | 2021-10-26 | 2022-01-07 | 中国科学院上海微系统与信息技术研究所 | Preparation method of aluminum nitride/silicon carbide composite acoustic wave resonator and resonator |
| CN114070227A (en) * | 2021-10-26 | 2022-02-18 | 中国科学院上海微系统与信息技术研究所 | Preparation method of aluminum nitride acoustic wave resonator and resonator |
| CN114124021A (en) * | 2021-11-29 | 2022-03-01 | 中国科学院上海微系统与信息技术研究所 | Elastic wave resonator and multi-passband filter |
-
2022
- 2022-03-22 CN CN202210308897.9A patent/CN115296636A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102420582A (en) * | 2011-11-29 | 2012-04-18 | 浙江大学 | Structure of surface acoustic wave device on basis of flexible substrate and manufacturing method of surface acoustic wave device |
| CN103873010A (en) * | 2014-03-17 | 2014-06-18 | 电子科技大学 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
| US20200395911A1 (en) * | 2019-06-14 | 2020-12-17 | Skyworks Global Pte. Ltd. | Bulk acoustic wave device with floating raised frame |
| CN113708740A (en) * | 2021-09-07 | 2021-11-26 | 上海集成电路材料研究院有限公司 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
| CN113904645A (en) * | 2021-10-26 | 2022-01-07 | 中国科学院上海微系统与信息技术研究所 | Preparation method of aluminum nitride/silicon carbide composite acoustic wave resonator and resonator |
| CN114070227A (en) * | 2021-10-26 | 2022-02-18 | 中国科学院上海微系统与信息技术研究所 | Preparation method of aluminum nitride acoustic wave resonator and resonator |
| CN114124021A (en) * | 2021-11-29 | 2022-03-01 | 中国科学院上海微系统与信息技术研究所 | Elastic wave resonator and multi-passband filter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117879523A (en) * | 2024-03-12 | 2024-04-12 | 华南理工大学 | Preparation system of tunable film bulk acoustic resonator |
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