JP5000820B2 - Acoustic resonator and manufacturing method thereof - Google Patents

Acoustic resonator and manufacturing method thereof Download PDF

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JP5000820B2
JP5000820B2 JP2001273852A JP2001273852A JP5000820B2 JP 5000820 B2 JP5000820 B2 JP 5000820B2 JP 2001273852 A JP2001273852 A JP 2001273852A JP 2001273852 A JP2001273852 A JP 2001273852A JP 5000820 B2 JP5000820 B2 JP 5000820B2
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JP2002182652A (en
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リチャード・シー・ルビー
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アバゴ・テクノロジーズ・ワイヤレス・アイピー（シンガポール）プライベート・リミテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/959—Mechanical polishing of wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、音響共振器及びその製造方法に関し、更に詳しくは、電子回路におけるフィルタとして使うことができる共振器及びその製造方法に関する。
【０００２】
【従来の技術】
電子機器の価格を下げるともに寸法を小さくすることの要求のために、より小さなフィルタ部品が継続的に必要とされている。携帯電話や小型ラジオのようなコンシューマ・エレクトロニクスは、それらに内蔵される部品の寸法・価格に厳しい基準を設けている。このような機器の多くは、周波数に関して精密に同調しなければならないフィルタを用いている。従って、低コストで、コンパクトなフィルタユニットを提供するための継続的な努力が行なわれている。
【０００３】
これらの要求に適合できるポテンシャルを備えたフィルタ部品の一つは、音響共振器のためのものである。これらの装置は、薄膜圧電（ＰＺ）材料内で大きな縦音波を用いている。一つの簡単な構造において、圧電材料の層は、二つの金属電極の間にサンドイッチされている。このサンドイッチ構造は、その周囲を支えられて空気中に吊り下げられている。電圧を加えられて電界がこの二つの電極の間に発生すると、圧電材料は、電気的なエネルギーを音波の形の機械的なエネルギーに変換する。この音波は、電界と同じ方向に伝わり、電極／空気インターフェースで反射する。
【０００４】
機械的な共振という観点からは、この装置は電子的な共振器と考えられるので、装置はフィルタとして働く。機械的な共振周波数は、装置内を伝わる音波の半波長が材料内の音の所定の位相速度に対する装置の全体的な厚さに等しくなるような周波数である。音の速度は光の速度よりもはるかに低い次数にあるので、構成された共振器は、非常にコンパクトなものになる。ＧＨｚ範囲に適用される共振器は、直径において１００μｍ以下、厚さにおいて数μｍ以下の物理的な寸法を有している。
【０００５】
薄膜バルク音響共振器（ＦＢＡＲ）と積層型薄膜バルク波音響共振器（ＳＢＡＲ）又はそれらを含むフィルタは、１〜２μｍの大きさの薄膜スパッタ圧電フィルムを有している。上部及び下部の電極は圧電体を挟むように導電リードを形成し、この圧電体を通過する方向に電界を形成する。これにより、この圧電体は、電界の一部分を、機械的な場又はエネルギーに変換する。時間的に変化する「応力／ひずみ」の場が、時間的に変化する加えられた電界に対応して形成される。
【０００６】
共振器として働くために、挟まれた圧電フィルムは、このフィルム内に音波をとらえる空気／結晶インターフェースを構成するように空気中に吊り下げられる。装置は、通常、基板表面に、下部電極、圧電体層、次いで、上部電極を堆積させることによって作り出される。従って、空気／結晶インターフェースは、既に、装置の上部に存在していることになる。第２の空気／結晶インターフェースが、装置の底部に構成されなければならない。この第２の空気／結晶インターフェースを得るために、いくつかのアプローチがある。これらのアプローチのいくつかが、以後、参照文献として取り扱われるＲｕｂｙなどに付与された米国特許第６，０６０，８１８号に開示されている。
【０００７】
例えば、直径４インチの単結晶シリコンウエハのような単一の基板上に複数のＦＢＡＲを作り出すことが可能である。基板は、次いで、その上に形成される多数のＦＢＡＲに分離するようにダイシングされる。しかしながら、この基板をダイシングする工程では、非常に薄いＦＢＡＲ共振器を壊すおそれがあるので、ダイシング工程には注意を払わねばならない。
【０００８】
【発明が解決しようとする課題】
従って、音響共振器構造及びその製造方法に対する改善への要求がある。特に、ＦＢＡＲとＳＢＡＲを製造するバッチ処理における改善が求められている。
【０００９】
【課題を解決するための手段】
本発明による音響共振器をバッチ処理するための方法は、基板の表面上に第１の電極を堆積させ、該第１の電極上に圧電材料の層を堆積させ、該圧電材料の層上に第２の電極を堆積させ、及び、前記基板の底面から材料を除去して前記基板の厚さを少なくするとともに結果として得られるフィルタへの電磁的な影響を小さくする構造を形成する過程を含んでいる。
【００１０】
本発明の他の実施形態においては、音響フィルタが設けられる。音響フィルタは、表面に形成されたキャビティを備えたダイ基板を含み、このダイ基板は、約４９０μｍ（１９ミル）以下の厚さを備え、複数の共振器メンブレンがダイ基板の上に形成される。これらの複数の共振器メンブレンは、ダイ基板のキャビティ上に配置された第１の電極と、第１の電極上に形成された圧電材料と、及び、圧電材料上に形成された第２の電極を含んでいる。複数の相互接続体がダイ基板に形成されて複数の共振器メンブレン間の電気的な接続体を構成している。パッケージが設けられ、このパッケージは、その表面に形成されたダイキャビティを備えており、更にダイ基板は、このダイキャビティに設けられ、従って、ダイ基板の表面に沿って流れる一次電流が一次電流磁界を発生させるとともに基板下方の接地面に沿って流れる像電流（又はイメージ電流）が像電流磁界を発生させ、この一次電流磁界と像電流磁界が逆の極性を有しているようにしている。
【００１１】
【発明の実施の形態】
本発明の好適実施例と、それらの利点は、図１乃至図１０を参照することにより最適の理解が得られる。様々な図面における同一の及び対応する部材には、同一の数字が付与されている。
【００１２】
図１は、本発明の理解を容易にしようとするもので、（ａ）、（ｂ）は、それぞれ、ＦＢＡＲメンブレン１００とＳＢＡＲメンブレン１１０を示す断面図である。ＦＢＡＲメンブレン１００は、下部電極と上部電極１０２、１０４をそれぞれ有しており、これらは、例えば、窒化アルミニウムＡｌＮのような圧電（ＰＺ）材料１０６のシートの一部分をサンドイッチしている。ＦＢＡＲメンブレン１００に用いられる電極１０２、１０４は、例えば、モリブデンにより作られている。ＦＢＡＲメンブレン１００は、薄膜圧電材料１０６中において大きな縦音波を用いる。下部電極１０２と上部電極１０４間に加えられた電圧により電界が発生されると、圧電材料１０６は、電気的なエネルギーを音波の形で機械的なエネルギーに変換する。この音波は、電界と同じ方向に伝わって電極／空気インターフェースで反射する。
【００１３】
機械的な共振において、ＦＢＡＲメンブレン１００は、電子的な共振器と考えられるので、装置は、ノッチフィルタとして働く。機械的な共振周波数は、装置内を伝わる音波の半波長が材料内の音の所定の位相速度に対する装置の全体的な厚さに等しくなるような周波数である。音の速度は光の速度よりもはるかに低い次数にあるので、構成された共振器は、非常にコンパクトなものになる。ＧＨｚ範囲に適用される共振器は、直径において２００μｍ以下、厚さにおいて数μｍ以下の物理的な寸法を有するように構成される。
【００１４】
ＳＢＡＲメンブレン１１０の断面図を示す図１（ｂ）によれば、ＳＢＡＲメンブレン１１０は、帯域通過フィルタの電気的な機能と同じ機能を有している。ＳＢＡＲメンブレン１１０は、基本的には、機械的に接続されている二つのＳＢＡＲメンブレンである。電極１１２、１１４間の圧電層１１８の共振周波数を有する信号は、圧電層１２０に音響エネルギーを伝える。圧電層１２０における機械的な振動は、圧電層１２０内の圧電材料によって電極１１４と１１６をまたぐ電気的な信号に変換される。
【００１５】
ＦＢＡＲとＳＢＡＲメンブレンが本発明の実施形態により構成されるやり方が、複数のＦＢＡＲメンブレンが作り出される基板２００の一部分の断面図である図２−図８を参照すると容易に理解できる。
【００１６】
図２は、例えば、４インチ（約１０２ｍｍ）の直径と、約５５０μｍ（約２２ミル）の厚さｔ1を備えた集積回路製造に使われるタイプの周知のシリコンウエハとされ得る基板２００の一部分を示している。複数のキャビティ２０４が、基板２００の表面にエッチングにより設けられている。各々のキャビティ２０４の深さｄは、ＦＢＡＲメンブレン２１７（図６）における圧電層によって生じる移動を吸収できるような大きさでなければならない。図２に示される実施例においては、約５μｍの深さｄが適切である。キャビティ２０４の各々は、約２００μｍの上部幅ｗuと、約１９３μｍの下部幅ｗlとを備えている。
【００１７】
本発明のこの実施例によるＦＢＡＲメンブレン２１７の製造は、バッチ処理であり、従って、複数のＦＢＡＲメンブレン２１７は、単一の基板２００上に同時に形成される。図３乃至図５は１個のＦＢＡＲメンブレン２１７を形成するのに使われる処理を示しているが、複数の同じ処理が基板２００の表面にわたって施されて複数のＦＢＡＲメンブレン２１７を同時に形成できることは明らかであろう。更に、これらの図面が比例して描写されていないことは明らかであろう。簡単のために、図３乃至図５に示されている基板２００は、キャビティ２０４の深さｄの約２倍の厚さｔ１を備えているように見えるが、上述した実施例の寸法により示されているように、基板２００は、通常、ｄよりもはるかに厚い。
【００１８】
熱酸化物２０６の薄膜層は、基板２００の表面で成長して引き続く過程において使われるリン石英ガラス（ＰＳＧ）からリンが基板２００中に拡散することを妨げる。このような拡散は、シリコンにより形成される基板２００を導電体に変換して最終装置における電気的な動作と干渉することになる。
【００１９】
図４において、犠牲的なＰＳＧ層２０８は、次いで、基板２００に堆積させられる。犠牲的なＰＳＧ層２０８は、シランとＰ2Ｏ5を用いて約４５０℃の温度において堆積されて約８％のリンであるソフトガラス状の材料を形成する。この低温度処理は従来周知であるので、以後詳細には説明しない。ＰＳＧは非常なる透明性を備えた不活性の材料であり、比較的低温での堆積が可能であり、希釈されたＨ2Ｏ：ＨＦ溶液内で非常に高速度のエッチング速度でエッチングされることができ、従って、仮配置層として使うことが有益である。１０：１の希釈比において、３μｍ／分のオーダーでのエッチング速度を得ることができる。
【００２０】
残念ながら、そのままのＰＳＧ仮配置層は、通常、音響共振器を構成するのには不充分な基板である。このような堆積された薄膜の面は、原子レベルでは非常に粗い。ＦＢＡＲ／ＳＢＡＲタイプの音響共振器は、結晶が電極の面に対して直交している柱状に成長している圧電材料を用いる。実験において、ＰＳＧ層の表面に上手く並列させられた圧電フィルムを成長させる試みがなされたが、粗い面上で多くの面があらゆる方向に結晶成長を始めるためにほとんど圧電効果を示さない貧弱な多結晶材料を得ただけであった。基板が、圧電層にとっての「種」構造、即ち成長の基礎となる結晶構造を含まずとも、平滑な面を構成することにより優れた圧電効果を示す高度に構造組織化されたｃ軸圧電材料を堆積するための効果的な基板となりうる。
【００２１】
本発明の複数の実施形態が、ＰＳＧ層２０８の表面を研磨することによってこの問題を克服し、原子的に滑らかな面を形成する。図５において、ＰＳＧ層１０５の表面は、まず、スラリーとともに研磨によって平滑化されてキャビティ２０４外部のＰＳＧ層１０５の部分と熱酸化層２０６が除去される。残りのＰＳＧ層２１０が、次いで、より微細なスラリーにより研磨される。或いは、単一のスラリーを両方の研磨過程に使っても良い。これらの研磨過程は、ＰＳＧ部分２１０の表面に「鏡」のような仕上げを作り出すべきである。
【００２２】
研磨後、基板２００は、残留しているスラリーやその他の汚染物を除去するように洗浄される。研磨後、ウエハは、様々な洗浄剤を保持している一連のタンク内にウエハを浸漬する最終的な洗浄過程の用意ができるまで脱イオン水内に漬けられている。タンクの各々は、超音波撹拌を受ける。
【００２３】
洗浄後、例えば、モリブデンからなる電極層２１２が堆積され、次いで、選択的にエッチングされてＦＢＡＲメンブレン２１７の下部電極を形成する。Ａｌ、Ｗ、Ａｕ、Ｐｔ、或いは、Ｔｉのような様々な代替材料を電極２１２に使用できる。モリブデンは、低い熱弾性損失を有しているので、共振器に用いるのに適している。この実施例においては、モリブデンが、スパッタリングにより堆積されて５ｎｍ以下の高さにおけるＲＭＳ変化を備えた滑らかなモリブデン層を構成する。
【００２４】
下部電極層２１２が堆積された後、圧電層２１４が堆積される。一つの実施例において、圧電層２１４は、０．１〜１０μｍの間の厚さを備えたＡｌＮスパッタ堆積層である。最終的に、例えば、下部電極層２１２と同じ材料から構成されている上部電極層２１６が、堆積されて選択的にエッチングされる。次いで、圧電層２１４が選択的にエッチングされ、下部電極層２１２、圧電層２１４、及び、上部電極層２１６が、ＦＢＡＲメンブレン２１７を形成する。得られた構造が、図６に示されている。
【００２５】
従来周知のシリコンウエハ処理において、装置がウエハ表面に形成された後、ウエハは、切断過程においてダイシングされて複数の個々のダイとなる。切断は、通常、高圧ＤＩ水リンスと組み合わせて高速度の旋盤が使われてシリコンチップと切断により生じた残留物を除去する。しかしながら、ＦＢＡＲメンブレン２１７は、非常に薄くて壊れやすいので、このリンス作業は、ＦＢＡＲメンブレン２１７を破壊することがある。
【００２６】
ウエハ切断に代わるものは、「スクライブ・クリーブ」として知られている処理である。例えば、ダイヤモンド切断チップであることができるスクライブは、ウエハの表面に沿って引かれてウエハ面に浅い溝（スクライブ線）を形成する。個々のダイは、溝の位置においてウエハに圧力をかけることによって分離される。ウエハは、ウエハの結晶構造に従うようにした溝の位置において分離する。「分離」過程は、スクライブ線に沿ってウエハの下方を押圧することによって或いはウエハの面上に円筒形のローラをかけることによって実行される。いずれの場合においても、ダイの幅ｗdがウエハの厚さｔ1に対して小さいときは、「スクライブ・クリーブ」は、不確実なものとなり、ダイシングの際に望むようには分離できない。一つの実施例において、ｗdとｔ1の比は、少なくとも２〜１であることが好ましい。
【００２７】
上述したように、基板２００は、約３８０〜７６０μｍ（約１６〜３０ミル）の範囲の厚さｔ1を備えるとともに約１０００μｍ（１ｍｍ）のＦＢＡＲフィルタの各々の幅ｗd（図９）を備える。「スクライブ・クリーブ」過程の使用における問題を克服するために、基板２００は、ダイ分離に先立って薄くすることができる。この薄くすることは、ラッピング、プラズマエッチング、或いは、化学的機械的研磨（ＣＭＰ）処理を行なうことによって基板２００の下側２１８から材料を除去することにより達成される。
【００２８】
基板２００の下部２１８の研磨は、ＦＢＡＲメンブレン２１７の脆弱な性質のために余計な問題を生じる。研磨処理において、基板２００の下側２１８は、研磨スラリーの存在下に回転研磨面に対向して配置されるので、圧力が表面２２０にかかる。この圧力は、下側２１８からの材料の除去を容易にする。損傷を防ぐために、犠牲的なＰＳＧ層２０８の残りの部分は、キャビティ２０４内に残って基板２００を薄くしつつＦＢＡＲメンブレン２１７の構造的な支持を行なう。
【００２９】
図７は、薄くした後の基板２００を示している。一つの実施例において、薄くした厚さｔ2は、約１２７μｍ（約５ミル）に等しく、これは、ＦＢＡＲメンブレン２１７の特性を良好にするばかりでなく、後工程における基板２００に必要な剛性を維持するだけの十分な厚さである。他の実施例において、ｔ2は、約２５μｍ乃至２５４μｍ（約１〜１０ミル）の範囲にある。約２５μｍ乃至４８３μｍ（約１〜１９ミル）の厚さｔ2が、必要とされる形状に対応して許容可能である。
【００３０】
ＦＢＡＲメンブレン２１７ａ−２１７ｃが形成されて基板２００が薄くされた後、仮配置層２０８の残りの部分２１０ａ−２１０ｃと熱酸化層２０６が、除去できる。これを行なうために、通路（図示せず）が犠牲ＰＳＧ部分２１０を露出させるように形成されている。これらの残留犠牲ＰＳＧ部分２１０と熱酸化層２０６は、希釈されたＨ2Ｏ：ＨＦ溶液内でエッチングにより除去される。図７に示すように、これは、当初のキャビティ２０４ａ−２０４ｃの上に吊り下げられたＦＢＡＲメンブレン２１７ａ−２１７ｃを残す。
【００３１】
上述の実施例は、ＦＢＡＲメンブレン２１７ａ−２１７ｃの構造を用いた。しかしながら、ＳＢＡＲメンブレンが同じやり方で構成できることは、当該技術に通常の知識を有する者には明らかであろう。ＳＢＡＲの場合には、追加の圧電層と電極が堆積される。
【００３２】
「スクライブ」過程において、ダイヤモンドチップスクライブが、図８に示されるように基板２００における表面２２０に小さな溝２２２を切断するように使われる。次いで、プラスチック層（図示せず）が、表面２２０上に配置される。このプラスチック層は、例えば、静電気によって発生された電荷を備えた非接着ポリイミドテープであることができる。
【００３３】
基板２００は、次いで、１組の輪の上に配置された接着テープを有するキャリヤ上に取り付けられる。接着テープは、基板２００の下側２１８に接着され、オーバーレイが、さらなる支持のために基板２００の表面２２０に形成される。基板２００上の各々の溝２２２は、次いで、ブレードを用いて衝撃を与えられて溝２２２によって定められるスクライブ線に沿って分離することによりダイスを形成する。ウエハエキスパンダ工具が分離されているダイスが接着されている接着テープを延ばすために使われ、個々のダイスの取り扱いを容易にしている。個々のダイスは、次いで、除去され、以下に説明するように更に処理される。
【００３４】
「クリーブ」又は切断の工程中、粒子が、通常、破壊の位置において基板２００から発散する。これらがＦＢＡＲメンブレン２１７に堆積するときは、これらの粒子は、ＦＢＡＲメンブレン２１７の能力にダメージ或いは負の影響を与える。プラスチック層が、粒子の静電荷によりこれらの粒子を有効に引き付けて保持し、特に電極層２１２、２１６であるＦＢＡＲメンブレン２１７のいかなる部分にも粒子が接触しないようにする。ダイスの分離後、プラスチック層は除去されるので、このプラスチック層に堆積していたすべての粒子が除去される。
【００３５】
分離されたダイの各々は、その上に形成された複数のＦＢＡＲ共振器を備えており、複数の相互接続体に電気的に接続されている。ＦＢＡＲ共振器を備えたダイと相互接続体は、単一のＦＢＡＲフィルタ２２６を形成する。ＦＢＡＲフィルタ２２６は、次いで、図９−図１０に示されるようにセラミックパッケージ２２８内のダイキャビティ２２９に取り付けられる。図９は、パッケージ２２８内に取り付けられたＦＢＡＲフィルタ２２６の平面図であり、図１０は、線Ａ−Ａに沿って見た図９における構造の断面図である。
【００３６】
ＦＢＡＲフィルタ２２６は、熱伝導性エポキシ層２３０を用いてパッケージ２２８に接着され、導電性接着ワイヤ２３１は、パッケージ２２８とＦＢＡＲフィルタ２２６との間を電気的に接続している。蓋２３４が、ＦＢＡＲフィルタ２２６が取り付けられた後パッケージ２２８の上部をシールする。パッケージ２２８は、次いで、従来周知の表面実装ハンダ付け技術を用いてプリント回路板２３６上に取り付けられる。
【００３７】
ＦＢＡＲフィルタ２２６が使用状態にあるとき、大きな電力がＦＢＡＲフィルタ２２６に供給され、熱を発生させる。一つの実施例において、パッケージ２２８は、一つ或いはそれ以上の熱通路２３８ａ−２３８ｃを備え、これらは、ＦＢＡＲフィルタ２２６からプリント回路（“ＰＣ”）板２３６へ熱を伝導させるように使われる。エポキシ層２３０は、また、熱伝導性を有しているので、基板２００から熱通路２３８ａ−２３８ｃへの熱の流れを改善する。ＰＣ板２３６は、例えば、追加の熱通路と従来周知の対流冷却を用いて装置２２６から取り出された熱を消滅させる。使用に先立っての基板２００の厚さを減じることは、基板２００の熱抵抗を小さくすることによってＦＢＡＲメンブレン２１７からの熱移動を改善するように働く。かくして、熱は、更に容易にＦＢＡＲメンブレン２１７からＰＣ板２３６に流れることができる。
【００３８】
本発明のいくつかの実施形態によって与えられるその他の利点は、ＦＢＡＲフィルタ２２６を介して流れる電流によって生じる電磁的な影響の減少である。フィルタの一つの重要な特性は、対象となる周波数の外で、ＦＢＡＲメンブレンは、フィルタを通過するエネルギー量を減衰させることにある。通過帯域外の周波数での減衰量は、５０ｄＢ程度でなければならない。
【００３９】
このフィルタリング特性は、信号がフィルタ部材をバイパスするような入力から出力への「通路」があるときは、保証されない。このような通路の一つが、入力信号パッド２４０ａと、ＦＢＡＲ共振器２１７ａと２１７ｂを介した第１の接地パッド２０４ｂとによって形成された第１のループ（「ビクティマイザ」ループ）と、ＦＢＡＲ共振器２１７ｃと２１７ｄを介した出力パッド２４０ｃから接地パッド２４０ｄ間への通路によって形成される出力における第２のループ（「ビクティム」ループ）との間に形成される相互インダクタンスによって構成される。このバイパス通路を緩和する一つの構成は、接地面２３０における第１のループ（「ビクティマイザ」ループ）下方の像電流の発生である（図１０）。
【００４０】
図９から明らかなように、パッケージ２２８は、ＦＢＡＲフィルタ２２６上の接点２４０に電気的に接続される複数の接点２４２を有している。接点２４０は、このとき、ＦＢＡＲフィルタ２２６上のＦＢＡＲメンブレンに電気的に接続される。これらの電気的な接続は、ＦＢＡＲフィルタ２２６の表面上に多くの電流を生じ、その二つである電流ループ２３２ａと２３２ｂが、図９に示されている。電流ループ２３２ａ（「ビクティマイザ」電流）は、矢印Ｂの方向に流れ、ＦＢＡＲフィルタ２２６の直下の接地面２３０に像電流を生じさせる。この像電流は、電流ループ２３２ａの通路を逆の方向に流れる。電流ループ２３２ａは、また、共鳴電流２３２ｂ（「ビクティム」ループ）を生じさせる。
【００４１】
図１０には、「ビクティマイザ」電流ループ２３２ａが線Ａ−Ａを横切る点である一次電流点２４４を示している。また、像電流点２４６は、「ビクティマイザ」電流ループ２３２ａの像電流が線Ａ−Ａを横切る点である。更に、図１０には「ビクティマイザ」電流ループ２３２ａによって「ビクティム」ループ２３２ｂに電流が生じる点である「ビクティム」ループの点２４８も示している。一次電流点２４４と像電流点２４６を通過して流れる対向する電流は、一次電流磁界２５０と像電流磁界２５２として示されている対向する磁界を発生させる。これらの磁界２５０と２５２の各々は、「ビクティム」ループの点２４８において電流を生じさせる。しかしながら、一次電流点２４４とビクティム電流点２４８間の距離ｒ1は、像電流点２４６とビクティム電流点２４８間の距離ｒ２よりも短い。従って、発生された磁界２５０と２５２は、点２４８において大きさが等しくないので出力ループ２３２ｂに電流を生じさせる。
【００４２】
本発明のいくつかの実施例において、基板２００は、個々のダイスに分離される前に薄くされる。この薄くするということにより、一次電流点２４４とビクティム電流点２４６間の距離ｔ2は小さくなる。ｔ2はｒ1よりもはるかに小さな距離にされているので、一次電流磁界２５０の大きさは、象電流磁界２５２の大きさに接近することになる。一次電流点２４４を流れる一次電流と像電流点２４６を流れる像電流は反対の方向を有するので、像電流磁界２５２は、一次電流磁界２５０を打ち消すように働くことになる。従って、距離ｔ2が小さくされると、磁界２５０と２５２の大きさは、互いに接近し、磁界２５０と２５２の打ち消しが、更に完全なものとなる。これは、「ビクティム」電流ループ２３２ｂに生じる電流を最小にし、パッケージ２２８の総合的な効率を改善する。
【００４３】
多数の電流通路がＦＢＡＲフィルタ２２６の表面上に存在し、ＦＢＡＲフィルタ２２６下方の接地面において等しい数の像電流通路を発生させることは明らかであろう。これらの電流のすべては、程度を変えて電流付近で影響を与える磁界を発生する。基板の厚さｔ２を小さくすることによって、接地面における像電流は、ＦＢＡＲフィルタ２２６の表面に流れる対応する電流に近づけられる。
【００４４】
「ビクティム」と「ビクティマイザ」ループ間の差は、通常、約３００〜５１０μｍ（約１２〜２０ミル）のオーダーである。これらのループ間の距離を小さくしてダイの大きさを小さくするとともに出力を大きくすることが一般的に望ましい。従って、「ビクティム」と「ビクティマイザ」ループ間の距離の少なくとも１／３に基板の厚さを設定することが好ましい。これは、一次電流によって生じた磁界を打ち消そうとする磁界を誘導すべく像電流の作用を改善する。
【００４５】
上述したように、本発明による実施例は、多くの利点を与える。ＦＢＡＲメンブレン２１７の形成後基板２００を薄くすることは、ＦＢＡＲフィルタ２２６の熱的効率と電気的効率との両方を改善する。ＦＢＡＲメンブレン２１７はこの基板２００を薄くすることに先立って形成されるので、基板２００は、ＦＢＡＲメンブレン２１７の製造中は構造的に強化されていて壊れることがほとんどない。更に、処理中にキャビティ２０４内に犠牲ＰＳＧ部分２１０を保持しているので、犠牲ＰＳＧ部分２１０は、ＦＢＡＲメンブレン２１７を構造的に支持することになる。その上、基板２００を薄くすることは、単一のウエハ上に複数のＦＢＡＲメンブレン２１７を同時に形成するためのバッチ処理の一部分であることができるので、生産効率を高めることができる。上述した基板２００を薄くすることの利点は、ここで開示された特定のＦＢＡＲ製造処理に限定されるものではなく、ＦＢＡＲ共振器及びフィルタを製造するいかなる処理にも適用できることにある。ＦＢＡＲを製造する別の方法は、以後、参照文献として取り扱われるＲｕｂｙなどに付与された米国特許第５，８７３，１５３号に開示されている。
【００４６】
上述したような基板２００を薄くすることの利点は、ここで説明された特定のＦＢＡＲ構造に限定されるものではなく、その他のＦＢＡＲ及び面音波（ＳＡＷ）構造にも適用できるものである。基板を薄くする過程が適用できるＦＢＡＲを製造するその他のやり方は、以後、参照文献として取り扱われるＲｕｂｙなどに付与された上述した米国特許第５，８７３，１５３号に開示されている。
【００４７】
本発明は特定の実施例を参照して説明されたが、この説明は、発明の適用の単なる実施例であり、これに限定されるものではない。特に、上述の議論の対象の多くはＦＢＡＲフィルタに向けられたが、本発明の他の実施形態が、ＳＢＡＲ装置の製造或いはその他の薄膜フィルタ技術に適用可能である。開示されている実施形態に関連した種々のその他の応用、及び構成の特徴の組み合わせは、以下の特許請求の範囲によって定められている技術的な範囲に属するものである。
【００４８】
以上のように好適実施形態に沿って本発明を説明すると、本発明は、一対の電極で挟まれた圧電材料（２１４）が基板（２００）上に実装される構成の音響共振器において、前記基板（２００）の厚さを薄くしてフィルタへの電磁的な影響を小さくしたことを特徴とする音響共振器を提供する。
【００４９】
好ましくは、前記フィルタはビクティムループ（２３２ｂ）及びビクティマイザループ（２３２ａ）を含み、両者間の距離と前記基板の厚さとのアスペクト比が少なくとも３：１であるようにした。
【００５０】
好ましくは、前記圧電材料が配置される位置の下側には凹形状のキャビティが形成される。
【００５１】
好ましくは、音響共振器（２１７）をバッチ処理して製造する方法において、基板（２００）の表面（２２０）上に第１の電極（２１２）を堆積させる工程と、該第１の電極（２１２）上に圧電材料（２１４）の層を堆積させる工程と、該圧電材料（２１４）の層上に第２の電極（２１６）を堆積させる工程と、前記基板（２００）の底面（２１８）から材料を除去して前記基板（２００）の厚さを少なくし、フィルタ機能への電磁的な影響を小さくする工程とを有することを特徴とした製造方法を提供する。
【００５２】
好ましくは、更に、前記第１の電極（２１２）の堆積に先立って、前記基板（２００）の前記表面（２２０）に複数の凹部（２０４）を形成する工程と、前記凹部（２０４）の各々に仮配置材料（２１０）を堆積させる工程と、その際前記第１の電極（２１２）が、前記仮配置材料（２１０）の表面に堆積する工程と、前記仮配置材料（２１０）を除去する工程とを有する。
【００５３】
好ましくは、前記第１及び第２の電極（２１２、２１６）が、モリブデンを含む。
【００５４】
好ましくは、更に、前記基板（２００）の前記表面（２２０）をダイシングする工程を有し、ダイシングライン（２２２）に沿って前記基板（２００）を分割して複数のダイスを形成するようにする。
【００５５】
好ましくは、更に、前記複数のダイスの形成により形成されたそれぞれのダイ（２２６）を、パッケージ（２２８）のダイキャビティ（２２９）内に前記ダイを取り付けて個々のパッケージされたフィルタを形成し、前記ダイ（２２６）の底面（２１８）が前記パッケージ（２２８）内の熱通路（２３８）と熱接続されるように前記ダイキャビティ（２２９）内に取り付ける工程を有する。
【００５６】
好ましくは、前記ダイ（２２６）を前記パッケージ（２２８）における前記ダイキャビティ（２２９）内に取り付ける工程が、前記パッケージ（２２８）における前記ダイキャビティ（２２９）内に熱伝導性のエポキシ（２３０）を堆積させ、及び、前記熱伝導性のエポキシ（２３０）表面に前記ダイ（２２６）を取り付け、その際前記熱伝導性のエポキシ（２３０）の下面が前記熱通路（２３８）に接触していることを含むようにする。
【００５７】
好ましくは、前記フィルタのビクティムループ（２３２ｂ）とビクティマイザループ（２３２ａ）間の距離と前記基板の厚さとのアスペクト比が少なくとも３：１であるようにする。
【００５８】
好ましくは、更に、前記ダイシングライン（２２２）に沿って前記基板を分割して前記複数のダイスを形成する前に、前記基板（２００）の前記表面（２２０）の上に保護層を堆積するようにする。
【００５９】
好ましくは、前記基板（２００）の前記底面（２１８）から材料を除去する工程が、前記基板（２００）を約４８０μｍ以下の厚さに薄くすることを含むようにする。
【００６０】
好ましくは、前記基板（２００）の前記底面（２１８）から材料を除去する過程が、研磨面に対して前記基板（２００）の前記底面（２１８）を配置し、及び、前記底面（２１８）を研磨してそこから材料を除去することを含む。
【図面の簡単な説明】
【図１】（ａ）及び（ｂ）はそれぞれ、ＦＢＡＲ共振器及びＳＢＡＲ共振器の断面図。
【図２】基板にキャビティを形成する工程を示す概略断面図。
【図３】熱酸化物層の形成する工程を示す概略断面図。
【図４】仮配置層を形成する工程を示す概略断面図。
【図５】研磨による平滑化の工程を示す概略断面図。
【図６】ＦＢＡＲメンブランを形成する工程を示す概略断面図。
【図７】仮配置層を除去する工程を示す概略断面図。
【図８】ダイシングラインを構成する溝を作る工程を示す概略断面図。
【図９】本発明の実施形態に従って構成されるＦＢＡＲによって生じる誘導電流を示す平面図。
【図１０】本発明の実施形態に従って構成されるＦＢＡＲを含むパッケージの断面図。
【符号の説明】
２００ 基板
２１２ 第１の電極
２１４ 圧電材料の層
２１６ 第２の電極
２１７ 音響共振器
２１８ 底面
２２０ 表面[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an acoustic resonator and a manufacturing method thereof, and more particularly to a resonator that can be used as a filter in an electronic circuit and a manufacturing method thereof.
[0002]
[Prior art]
Smaller filter components are continually needed due to the need to reduce the price and size of electronic equipment. Consumer electronics, such as mobile phones and small radios, have strict standards for the size and price of the components built into them. Many such devices use filters that must be precisely tuned with respect to frequency. Therefore, there is an ongoing effort to provide a low cost, compact filter unit.
[0003]
One filter component with the potential to meet these requirements is for acoustic resonators. These devices use large longitudinal acoustic waves within thin film piezoelectric (PZ) material. In one simple structure, a layer of piezoelectric material is sandwiched between two metal electrodes. The sandwich structure is suspended in the air while being supported around the periphery. When a voltage is applied and an electric field is generated between the two electrodes, the piezoelectric material converts electrical energy into mechanical energy in the form of sound waves. This sound wave travels in the same direction as the electric field and reflects off the electrode / air interface.
[0004]
From the point of view of mechanical resonance, the device can be considered as an electronic resonator, so the device acts as a filter. The mechanical resonance frequency is such that the half wavelength of the sound wave traveling through the device is equal to the overall thickness of the device for a given phase velocity of sound in the material. Since the speed of sound is in a much lower order than the speed of light, the constructed resonator becomes very compact. A resonator applied in the GHz range has physical dimensions of 100 μm or less in diameter and several μm or less in thickness.
[0005]
A thin film bulk acoustic resonator (FBAR) and a stacked thin film bulk acoustic wave resonator (SBAR) or a filter including them has a thin film sputtered piezoelectric film having a size of 1 to 2 μm. The upper and lower electrodes form conductive leads so as to sandwich the piezoelectric body, and an electric field is formed in the direction passing through the piezoelectric body. Thereby, the piezoelectric body converts a part of the electric field into a mechanical field or energy. A time-varying “stress / strain” field is formed in response to an applied electric field that varies over time.
[0006]
To act as a resonator, the sandwiched piezoelectric film is suspended in air to form an air / crystal interface that captures sound waves within the film. The device is typically created by depositing a lower electrode, a piezoelectric layer, and then an upper electrode on the substrate surface. Thus, the air / crystal interface already exists at the top of the device. A second air / crystal interface must be configured at the bottom of the device. There are several approaches to obtain this second air / crystal interface. Some of these approaches are disclosed in US Pat. No. 6,060,818 issued to Ruby et al.
[0007]
For example, multiple FBARs can be created on a single substrate, such as a 4 inch diameter single crystal silicon wafer. The substrate is then diced to separate into multiple FBARs formed thereon. However, in the process of dicing the substrate, attention must be paid to the dicing process because there is a risk of breaking a very thin FBAR resonator.
[0008]
[Problems to be solved by the invention]
Accordingly, there is a need for improvements to acoustic resonator structures and methods for manufacturing the same. In particular, there is a need for improvements in batch processing for manufacturing FBARs and SBARs.
[0009]
[Means for Solving the Problems]
A method for batch processing an acoustic resonator according to the present invention comprises depositing a first electrode on a surface of a substrate, depositing a layer of piezoelectric material on the first electrode, and on the layer of piezoelectric material. Depositing a second electrode and removing material from the bottom surface of the substrate to reduce the thickness of the substrate and form a structure that reduces the electromagnetic effects on the resulting filter. It is out.
[0010]
In another embodiment of the invention, an acoustic filter is provided. The acoustic filter includes a die substrate with a cavity formed in the surface, the die substrate having a thickness of about 490 μm (19 mils) or less, and a plurality of resonator membranes formed on the die substrate. . The plurality of resonator membranes include a first electrode disposed on the cavity of the die substrate, a piezoelectric material formed on the first electrode, and a second electrode formed on the piezoelectric material. Is included. A plurality of interconnects are formed on the die substrate to constitute an electrical connection between the plurality of resonator membranes. A package is provided, the package comprising a die cavity formed on the surface thereof, and further the die substrate is provided in the die cavity so that the primary current flowing along the surface of the die substrate is a primary current magnetic field. The image current (or image current) flowing along the ground plane below the substrate generates an image current magnetic field, and the primary current magnetic field and the image current magnetic field have opposite polarities.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
The preferred embodiments of the present invention and their advantages can be best understood with reference to FIGS. Identical and corresponding elements in the various drawings are given the same numerals.
[0012]
FIG. 1 is intended to facilitate understanding of the present invention, and (a) and (b) are cross-sectional views showing an FBAR membrane 100 and an SBAR membrane 110, respectively. The FBAR membrane 100 includes a lower electrode and an upper electrode 102, 104, respectively, which sandwich a portion of a sheet of piezoelectric (PZ) material 106, such as aluminum nitride AlN. The electrodes 102 and 104 used for the FBAR membrane 100 are made of, for example, molybdenum. The FBAR membrane 100 uses a large longitudinal acoustic wave in the thin film piezoelectric material 106. When an electric field is generated by a voltage applied between the lower electrode 102 and the upper electrode 104, the piezoelectric material 106 converts electrical energy into mechanical energy in the form of sound waves. This sound wave travels in the same direction as the electric field and reflects off the electrode / air interface.
[0013]
In mechanical resonance, the FBAR membrane 100 is considered an electronic resonator, so the device acts as a notch filter. The mechanical resonance frequency is such that the half wavelength of the sound wave traveling through the device is equal to the overall thickness of the device for a given phase velocity of sound in the material. Since the speed of sound is in a much lower order than the speed of light, the constructed resonator becomes very compact. A resonator applied to the GHz range is configured to have physical dimensions of 200 μm or less in diameter and several μm or less in thickness.
[0014]
According to FIG. 1B showing a cross-sectional view of the SBAR membrane 110, the SBAR membrane 110 has the same function as the electrical function of the bandpass filter. The SBAR membrane 110 is basically two SBAR membranes that are mechanically connected. A signal having the resonant frequency of the piezoelectric layer 118 between the electrodes 112, 114 transmits acoustic energy to the piezoelectric layer 120. Mechanical vibrations in the piezoelectric layer 120 are converted into electrical signals across the electrodes 114 and 116 by the piezoelectric material in the piezoelectric layer 120.
[0015]
The manner in which the FBAR and SBAR membranes are constructed according to embodiments of the present invention can be readily understood with reference to FIGS. 2-8, which are cross-sectional views of a portion of a substrate 200 on which a plurality of FBAR membranes are created.
[0016]
FIG. 2 shows, for example, a diameter of 4 inches (about 102 mm) and a thickness t of about 550 μm (about 22 mils). 1 FIG. 2 shows a portion of a substrate 200 that can be a well-known silicon wafer of the type used in the manufacture of integrated circuits comprising: A plurality of cavities 204 are provided on the surface of the substrate 200 by etching. The depth d of each cavity 204 must be large enough to absorb the movement caused by the piezoelectric layer in the FBAR membrane 217 (FIG. 6). In the embodiment shown in FIG. 2, a depth d of about 5 μm is appropriate. Each of the cavities 204 has an upper width w of about 200 μm. u And a lower width w of about 193 μm l And.
[0017]
The manufacture of the FBAR membrane 217 according to this embodiment of the invention is a batch process, and thus a plurality of FBAR membranes 217 are formed on a single substrate 200 simultaneously. 3-5 illustrate the process used to form a single FBAR membrane 217, it is clear that multiple identical processes can be applied over the surface of the substrate 200 to form multiple FBAR membranes 217 simultaneously. Will. Furthermore, it will be apparent that these drawings are not drawn to scale. For simplicity, the substrate 200 shown in FIGS. 3-5 appears to have a thickness t 1 that is approximately twice the depth d of the cavity 204, but is shown by the dimensions of the embodiment described above. As can be seen, the substrate 200 is typically much thicker than d.
[0018]
The thin film layer of thermal oxide 206 prevents phosphorus from diffusing into the substrate 200 from phosphor quartz glass (PSG) used in the subsequent process of growing on the surface of the substrate 200. Such diffusion causes the substrate 200 formed of silicon to be converted into a conductor and interfere with the electrical operation in the final device.
[0019]
In FIG. 4, a sacrificial PSG layer 208 is then deposited on the substrate 200. Sacrificial PSG layer 208 includes silane and P 2 O Five Is used to form a soft glassy material that is deposited at a temperature of about 450 ° C. and is about 8% phosphorus. This low temperature process is well known in the art and will not be described in detail hereinafter. PSG is an inert material with great transparency, can be deposited at relatively low temperatures, and diluted H 2 It can be etched at very high etch rates in O: HF solution and is therefore beneficial to use as a temporary placement layer. Etching rates on the order of 3 μm / min can be obtained at a dilution ratio of 10: 1.
[0020]
Unfortunately, the intact PSG temporary placement layer is usually a substrate that is insufficient to construct an acoustic resonator. The surface of such deposited thin film is very rough at the atomic level. An FBAR / SBAR type acoustic resonator uses a piezoelectric material in which a crystal grows in a columnar shape orthogonal to the electrode surface. In the experiment, an attempt was made to grow a piezoelectric film well aligned with the surface of the PSG layer. However, on the rough surface, many surfaces started crystal growth in all directions, and thus poor piezoelectricity showed little piezoelectric effect. Only a crystalline material was obtained. A highly structured c-axis piezoelectric material that exhibits a superior piezoelectric effect by forming a smooth surface, even if the substrate does not include a “seed” structure for the piezoelectric layer, ie, a crystal structure that is the basis of growth It can be an effective substrate for depositing.
[0021]
Embodiments of the present invention overcome this problem by polishing the surface of the PSG layer 208 to form an atomically smooth surface. In FIG. 5, the surface of the PSG layer 105 is first smoothed by polishing together with the slurry, and the PSG layer 105 portion outside the cavity 204 and the thermal oxide layer 206 are removed. The remaining PSG layer 210 is then polished with a finer slurry. Alternatively, a single slurry may be used for both polishing processes. These polishing processes should create a “mirror” -like finish on the surface of the PSG portion 210.
[0022]
After polishing, the substrate 200 is cleaned to remove residual slurry and other contaminants. After polishing, the wafer is immersed in deionized water until ready for a final cleaning process in which the wafer is immersed in a series of tanks holding various cleaning agents. Each of the tanks is subjected to ultrasonic agitation.
[0023]
After cleaning, an electrode layer 212 made of, for example, molybdenum is deposited and then selectively etched to form the lower electrode of the FBAR membrane 217. Various alternative materials such as Al, W, Au, Pt, or Ti can be used for the electrode 212. Molybdenum has a low thermoelastic loss and is suitable for use in a resonator. In this example, molybdenum is deposited by sputtering to constitute a smooth molybdenum layer with an RMS change at a height of 5 nm or less.
[0024]
After the lower electrode layer 212 is deposited, the piezoelectric layer 214 is deposited. In one embodiment, the piezoelectric layer 214 is an AlN sputter deposited layer with a thickness between 0.1 and 10 μm. Finally, for example, an upper electrode layer 216 made of the same material as the lower electrode layer 212 is deposited and selectively etched. Next, the piezoelectric layer 214 is selectively etched, and the lower electrode layer 212, the piezoelectric layer 214, and the upper electrode layer 216 form the FBAR membrane 217. The resulting structure is shown in FIG.
[0025]
In conventionally known silicon wafer processing, after the device is formed on the wafer surface, the wafer is diced into a plurality of individual dies in a cutting process. Cutting typically uses a high speed lathe in combination with high pressure DI water rinse to remove silicon chips and residues generated by cutting. However, since the FBAR membrane 217 is very thin and fragile, this rinsing operation may destroy the FBAR membrane 217.
[0026]
An alternative to wafer cutting is a process known as “scribe-cleave”. For example, a scribe, which can be a diamond cutting tip, is drawn along the surface of the wafer to form shallow grooves (scribe lines) on the wafer surface. Individual dies are separated by applying pressure to the wafer at the location of the grooves. The wafers are separated at the location of the grooves adapted to follow the crystal structure of the wafer. The “separation” process is performed by pressing under the wafer along the scribe line or by applying a cylindrical roller on the surface of the wafer. In either case, die width w d Is the wafer thickness t 1 When it is small, the “scribe cleave” becomes uncertain and cannot be separated as desired during dicing. In one embodiment, w d And t 1 The ratio is preferably at least 2-1.
[0027]
As described above, the substrate 200 has a thickness t in the range of about 380-760 μm (about 16-30 mils). 1 And a width w of each FBAR filter of about 1000 μm (1 mm) d (FIG. 9). To overcome the problems in using the “scribe cleave” process, the substrate 200 can be thinned prior to die separation. This thinning is accomplished by removing material from the lower side 218 of the substrate 200 by performing a lapping, plasma etching, or chemical mechanical polishing (CMP) process.
[0028]
Polishing the lower portion 218 of the substrate 200 creates additional problems due to the fragile nature of the FBAR membrane 217. In the polishing process, the lower side 218 of the substrate 200 is disposed opposite the rotating polishing surface in the presence of the polishing slurry, so that pressure is applied to the surface 220. This pressure facilitates the removal of material from the lower side 218. To prevent damage, the remaining portion of the sacrificial PSG layer 208 remains in the cavity 204 to provide structural support for the FBAR membrane 217 while making the substrate 200 thinner.
[0029]
FIG. 7 shows the substrate 200 after thinning. In one embodiment, the reduced thickness t 2 Is equal to about 127 μm (about 5 mils), which is sufficient to not only improve the properties of the FBAR membrane 217, but also maintain the rigidity required for the substrate 200 in a later process. In other embodiments, t 2 Is in the range of about 25 μm to 254 μm (about 1 to 10 mils). Thickness t of about 25 μm to 483 μm (about 1 to 19 mils) 2 Is acceptable for the required shape.
[0030]
After the FBAR membranes 217a-217c are formed and the substrate 200 is thinned, the remaining portions 210a-210c of the temporary placement layer 208 and the thermal oxide layer 206 can be removed. To do this, a passage (not shown) is formed to expose the sacrificial PSG portion 210. These residual sacrificial PSG portions 210 and thermal oxide layer 206 are diluted with H 2 It is removed by etching in the O: HF solution. As shown in FIG. 7, this leaves the FBAR membranes 217a-217c suspended above the original cavities 204a-204c.
[0031]
In the above-described embodiment, the structure of the FBAR membrane 217a-217c is used. However, it will be apparent to those skilled in the art that the SBAR membrane can be constructed in the same manner. In the case of SBAR, additional piezoelectric layers and electrodes are deposited.
[0032]
In the “scribe” process, diamond tip scribe is used to cut small grooves 222 in the surface 220 in the substrate 200 as shown in FIG. A plastic layer (not shown) is then placed on the surface 220. This plastic layer can be, for example, a non-adhesive polyimide tape with a charge generated by static electricity.
[0033]
The substrate 200 is then mounted on a carrier having an adhesive tape placed on a set of rings. The adhesive tape is adhered to the lower side 218 of the substrate 200 and an overlay is formed on the surface 220 of the substrate 200 for further support. Each groove 222 on the substrate 200 is then impacted with a blade to form a die by separating along the scribe line defined by the groove 222. A wafer expander tool is used to extend the adhesive tape to which the dice are separated, facilitating handling of the individual dice. Individual dice are then removed and further processed as described below.
[0034]
During the “cleaving” or cutting process, the particles typically diverge from the substrate 200 at the point of failure. When they are deposited on the FBAR membrane 217, these particles damage or negatively affect the ability of the FBAR membrane 217. The plastic layer effectively attracts and holds the particles due to the electrostatic charge of the particles and prevents the particles from contacting any part of the FBAR membrane 217, particularly the electrode layers 212, 216. After the dice are separated, the plastic layer is removed, so that all particles deposited on the plastic layer are removed.
[0035]
Each separated die has a plurality of FBAR resonators formed thereon and is electrically connected to a plurality of interconnects. The die and interconnect with the FBAR resonator form a single FBAR filter 226. The FBAR filter 226 is then attached to the die cavity 229 in the ceramic package 228 as shown in FIGS. 9-10. 9 is a plan view of the FBAR filter 226 mounted in the package 228, and FIG. 10 is a cross-sectional view of the structure in FIG. 9 as viewed along line AA.
[0036]
The FBAR filter 226 is adhered to the package 228 using a thermally conductive epoxy layer 230, and the conductive adhesive wire 231 electrically connects the package 228 and the FBAR filter 226. A lid 234 seals the top of the package 228 after the FBAR filter 226 is installed. Package 228 is then mounted on printed circuit board 236 using surface mount soldering techniques well known in the art.
[0037]
When the FBAR filter 226 is in use, large power is supplied to the FBAR filter 226 to generate heat. In one embodiment, the package 228 includes one or more thermal passages 238a-238c that are used to conduct heat from the FBAR filter 226 to a printed circuit ("PC") board 236. The epoxy layer 230 is also thermally conductive, thus improving the heat flow from the substrate 200 to the thermal passages 238a-238c. The PC plate 236 extinguishes heat removed from the device 226 using, for example, an additional heat path and conventionally known convective cooling. Reducing the thickness of the substrate 200 prior to use serves to improve heat transfer from the FBAR membrane 217 by reducing the thermal resistance of the substrate 200. Thus, heat can more easily flow from the FBAR membrane 217 to the PC board 236.
[0038]
Another advantage provided by some embodiments of the present invention is the reduction of electromagnetic effects caused by the current flowing through the FBAR filter 226. One important characteristic of the filter is that, outside the frequency of interest, the FBAR membrane attenuates the amount of energy that passes through the filter. The attenuation at frequencies outside the passband must be around 50 dB.
[0039]
This filtering characteristic is guaranteed when there is a “path” from the input to the output where the signal bypasses the filter member. Absent . One such path is a first loop ("victimizer" loop) formed by the input signal pad 240a and the first ground pad 204b through the FBAR resonators 217a and 217b, and the FBAR resonator 217c. , And a second loop (“victim” loop) at the output formed by the path from output pad 240c to ground pad 240d via 217d. this bypass One configuration to mitigate the path is the generation of an image current below the first loop (“victimizer” loop) on the ground plane 230 (FIG. 10).
[0040]
As is apparent from FIG. 9, the package 228 has a plurality of contacts 242 that are electrically connected to the contacts 240 on the FBAR filter 226. The contact 240 is then electrically connected to the FBAR membrane on the FBAR filter 226. These electrical connections produce a lot of current on the surface of the FBAR filter 226, two of which are current loops 232a and 232b are shown in FIG. The current loop 232 a (“victimizer” current) flows in the direction of arrow B and produces an image current on the ground plane 230 immediately below the FBAR filter 226. This image current flows in the opposite direction through the path of the current loop 232a. The current loop 232a also produces a resonant current 232b (a “victim” loop).
[0041]
FIG. 10 shows the primary current point 244, which is the point where the “victimizer” current loop 232a crosses line AA. The image current point 246 is a point where the image current of the “victimizer” current loop 232a crosses the line AA. Also shown in FIG. 10 is the “victim” loop point 248, which is the point at which the “victim” loop 232b generates current by the “victimizer” current loop 232a. Opposing currents flowing through primary current point 244 and image current point 246 generate opposing magnetic fields, shown as primary current magnetic field 250 and image current magnetic field 252. Each of these magnetic fields 250 and 252 cause a current at point 248 of the “victim” loop. However, the distance r between the primary current point 244 and the victim current point 248 1 Is shorter than the distance r2 between the image current point 246 and the victim current point 248. Thus, the generated magnetic fields 250 and 252 cause currents in the output loop 232b because they are not equal in magnitude at point 248.
[0042]
In some embodiments of the present invention, the substrate 200 is thinned before being separated into individual dice. By reducing the thickness, the distance t between the primary current point 244 and the victim current point 246 is t. 2 Becomes smaller. t 2 Is r 1 The primary current magnetic field 250 will approach the magnitude of the elephant current magnetic field 252. Since the primary current flowing through the primary current point 244 and the image current flowing through the image current point 246 have opposite directions, the image current magnetic field 252 will act to cancel the primary current magnetic field 250. Therefore, the distance t 2 Is reduced, the magnitudes of the magnetic fields 250 and 252 approach each other, and the cancellation of the magnetic fields 250 and 252 becomes more complete. This minimizes the current generated in the “victim” current loop 232b and improves the overall efficiency of the package 228.
[0043]
It will be apparent that multiple current paths exist on the surface of the FBAR filter 226 and generate an equal number of image current paths at the ground plane below the FBAR filter 226. All of these currents generate magnetic fields that affect the current in varying degrees. By reducing the thickness t2 of the substrate, the image current on the ground plane is brought close to the corresponding current flowing on the surface of the FBAR filter 226.
[0044]
The difference between the “victim” and “victimizer” loops is typically on the order of about 300-510 μm (about 12-20 mils). It is generally desirable to reduce the distance between these loops to reduce the die size and increase the output. Therefore, it is preferable to set the substrate thickness to at least one third of the distance between the “victim” and “victimizer” loops. This improves the effect of the image current to induce a magnetic field that attempts to counteract the magnetic field generated by the primary current.
[0045]
As mentioned above, embodiments according to the present invention provide many advantages. Thinning the substrate 200 after forming the FBAR membrane 217 improves both the thermal and electrical efficiency of the FBAR filter 226. Since the FBAR membrane 217 is formed prior to thinning the substrate 200, the substrate 200 is structurally reinforced during the manufacture of the FBAR membrane 217 and is hardly broken. Further, since the sacrificial PSG portion 210 is retained in the cavity 204 during processing, the sacrificial PSG portion 210 structurally supports the FBAR membrane 217. In addition, thinning the substrate 200 can be part of a batch process for simultaneously forming a plurality of FBAR membranes 217 on a single wafer, which can increase production efficiency. The advantages of thinning the substrate 200 described above are not limited to the specific FBAR manufacturing process disclosed herein, but can be applied to any process for manufacturing FBAR resonators and filters. Another method of manufacturing FBARs is disclosed in US Pat. No. 5,873,153 issued to Ruby et al.
[0046]
The advantages of thinning the substrate 200 as described above are not limited to the specific FBAR structure described herein, but can be applied to other FBAR and surface acoustic wave (SAW) structures. Another way of manufacturing an FBAR to which the process of thinning the substrate can be applied is disclosed in the above-mentioned US Pat. No. 5,873,153 assigned to Ruby et al.
[0047]
Although the invention has been described with reference to particular embodiments, the description is only an example of the invention's application and should not be taken as a limitation. In particular, much of the subject discussed above has been directed to FBAR filters, but other embodiments of the present invention are applicable to the manufacture of SBAR devices or other thin film filter technologies. Various other applications and combinations of structural features related to the disclosed embodiments belong to the technical scope defined by the following claims.
[0048]
As described above, the present invention will be described along a preferred embodiment. The present invention relates to an acoustic resonator having a configuration in which a piezoelectric material (214) sandwiched between a pair of electrodes is mounted on a substrate (200). There is provided an acoustic resonator characterized in that a substrate (200) is thinned to reduce electromagnetic influence on a filter.
[0049]
Preferably, the filter includes a victim loop (232b) and a victimizer loop (232a) such that the aspect ratio between the distance between them and the thickness of the substrate is at least 3: 1.
[0050]
Preferably, a concave cavity is formed below the position where the piezoelectric material is disposed.
[0051]
Preferably, in a method of batch manufacturing acoustic resonators (217), depositing a first electrode (212) on a surface (220) of a substrate (200), and the first electrode (212) ) Depositing a layer of piezoelectric material (214) on the substrate, depositing a second electrode (216) on the layer of piezoelectric material (214), and from the bottom surface (218) of the substrate (200). And a step of reducing the thickness of the substrate (200) by removing the material and reducing the electromagnetic influence on the filter function.
[0052]
Preferably, a step of forming a plurality of recesses (204) in the surface (220) of the substrate (200) prior to the deposition of the first electrode (212), and each of the recesses (204) Depositing the temporary placement material (210) on the surface, the first electrode (212) being deposited on the surface of the temporary placement material (210), and removing the temporary placement material (210) Process.
[0053]
Preferably, the first and second electrodes (212, 216) include molybdenum.
[0054]
Preferably, the method further includes a step of dicing the surface (220) of the substrate (200), and dividing the substrate (200) along a dicing line (222) to form a plurality of dice. .
[0055]
Preferably, each die (226) formed by forming the plurality of dies is further attached to the die cavity (229) of the package (228) to form individual packaged filters, Mounting in the die cavity (229) such that a bottom surface (218) of the die (226) is thermally connected to a thermal passage (238) in the package (228).
[0056]
Preferably, the step of attaching the die (226) into the die cavity (229) of the package (228) includes thermally conductive epoxy (230) in the die cavity (229) of the package (228). Depositing and attaching the die (226) to the surface of the thermally conductive epoxy (230), wherein the lower surface of the thermally conductive epoxy (230) is in contact with the thermal path (238) To include.
[0057]
Preferably, the aspect ratio between the distance between the victim loop (232b) and the victimizer loop (232a) of the filter and the thickness of the substrate is at least 3: 1.
[0058]
Preferably, a protective layer is further deposited on the surface (220) of the substrate (200) before dividing the substrate along the dicing line (222) to form the plurality of dice. To.
[0059]
Preferably, removing the material from the bottom surface (218) of the substrate (200) includes thinning the substrate (200) to a thickness of about 480 μm or less.
[0060]
Preferably, the process of removing material from the bottom surface (218) of the substrate (200) places the bottom surface (218) of the substrate (200) with respect to a polishing surface and the bottom surface (218). Polishing and removing material therefrom.
[Brief description of the drawings]
1A and 1B are cross-sectional views of an FBAR resonator and an SBAR resonator, respectively.
FIG. 2 is a schematic sectional view showing a step of forming a cavity in a substrate.
FIG. 3 is a schematic cross-sectional view showing a process of forming a thermal oxide layer.
FIG. 4 is a schematic cross-sectional view showing a process of forming a temporary arrangement layer.
FIG. 5 is a schematic cross-sectional view showing a smoothing process by polishing.
FIG. 6 is a schematic cross-sectional view showing a step of forming an FBAR membrane.
FIG. 7 is a schematic cross-sectional view showing a step of removing the temporary arrangement layer.
FIG. 8 is a schematic cross-sectional view showing a step of forming a groove constituting a dicing line.
FIG. 9 is a plan view showing induced current generated by an FBAR configured in accordance with an embodiment of the present invention.
FIG. 10 is a cross-sectional view of a package including an FBAR configured in accordance with an embodiment of the present invention.
[Explanation of symbols]
200 substrates
212 first electrode
214 Layers of piezoelectric material
216 second electrode
217 Acoustic resonator
218 Bottom
220 surface

Claims (12)

音響共振器（２１７）をバッチ処理して製造する方法において、
基板（２００）の表面上に第１の電極（２１２）を堆積させる工程と、
該第１の電極（２１２）上に圧電材料の層（２１４）を堆積させる工程と、
該圧電材料の層（２１４）上に第２の電極（２１６）を堆積させる工程と、
前記基板（２００）の底面から材料を除去して前記基板（２００）の厚さを少なくし、前記基板下方の接地面（２３０）に沿って流れる像電流の作用を改善して、フィルタ（２２６）内で生じる電磁的な影響を小さくする工程とを有する方法であって、
前記フィルタ内に、前記音響共振器（２１７ａ、２１７ｂ）を介して入力信号パッド（２０４ａ）と接地パッド（２０４ｂ）とから形成されるビクティマイザループ（２３２ａ）、並びに別の音響共振器（２１７ｃ、２１７ｄ）を介して信号出力パッド（２４０ｃ）と別の接地パッド（２０４ｄ）とから形成されるビクティムループ（２３２ｂ）が形成され、前記ビクティマイザループ（２３２ａ）と前記ビクティムループ（２３２ｂ）との間の距離（ｒ１）と前記基板（２００）の厚さ（ｔ２）とのアスペクト比が少なくとも３：１であるようにする、方法。In a method for batch processing acoustic resonators (217),
Depositing a first electrode (212) on a surface of a substrate (200);
Depositing a layer of piezoelectric material (214) on the first electrode (212);
Depositing a second electrode (216) on the layer of piezoelectric material (214);
The material is removed from the bottom surface of the substrate (200) to reduce the thickness of the substrate (200), the effect of the image current flowing along the ground plane (230) below the substrate is improved, and the filter (226 ) a method of perforated and a step of reducing the electromagnetic effects caused by the,
In the filter, a victimizer loop (232a) formed from an input signal pad (204a) and a ground pad (204b) through the acoustic resonator (217a, 217b), and another acoustic resonator (217c, A victim loop (232b) formed from the signal output pad (240c) and another ground pad (204d) through 217d), and between the victimizer loop (232a) and the victim loop (232b). The aspect ratio of the distance (r1) of the substrate and the thickness (t2) of the substrate (200) is at least 3: 1 . 更に、前記第１の電極（２１２）の堆積に先立って、前記基板（２００）の前記表面に複数の凹部を形成する工程と、
前記凹部の各々に仮配置材料（２１０）を堆積させる工程であって、それにより前記第１の電極（２１２）が前記仮配置材料（２１０）の表面に堆積する、工程と、
前記仮配置材料（２１０）を除去する工程とを含む請求項１に記載の方法。And forming a plurality of recesses in the surface of the substrate (200) prior to the deposition of the first electrode (212);
Depositing temporary placement material (210) in each of the recesses, whereby the first electrode (212) is deposited on the surface of the temporary placement material (210);
Removing the temporary placement material (210). 前記基板（２００）の底面から材料を除去して前記基板（２００）の厚さを少なくした後に、前記仮配置材料（２１０）を除去することを含む請求項２に記載の方法。  The method of claim 2, comprising removing the temporary placement material (210) after removing material from a bottom surface of the substrate (200) to reduce the thickness of the substrate (200). 前記仮配置材料（２１０）を堆積させた後、当該仮配置材料（２１０）の表面を研磨して平滑な面を得ることを含む請求項２又は３に記載の方法。  The method of claim 2 or 3, comprising depositing the temporary placement material (210) and then polishing the surface of the temporary placement material (210) to obtain a smooth surface. 前記基板（２００）の厚さを少なくし、フィルタ内で生じる電磁気的な影響を小さくすることが、前記フィルタ内で生じるフィルタリング特性を損なう電流を最小にすることを含む、請求項１から４のいずれか１項に記載の方法。  Reducing the thickness of the substrate (200) and reducing the electromagnetic effects that occur in the filter comprise minimizing currents that impair the filtering characteristics that occur in the filter. The method according to any one of the above. 前記第１及び第２の電極（２１２、２１６）が、モリブデンを含む請求項１から５のいずれか１項に記載の方法。  The method according to any one of the preceding claims, wherein the first and second electrodes (212, 216) comprise molybdenum. 更に、前記基板（２００）の前記表面をダイシングする工程を有し、ダイシングラインに沿って前記基板（２００）を分割して複数のダイスを形成するようにした請求項１から６のいずれか１項に記載の方法。  7. The method according to claim 1, further comprising a step of dicing the surface of the substrate (200), wherein the substrate (200) is divided along a dicing line to form a plurality of dice. The method according to item. 更に、前記複数のダイスの形成により形成されたそれぞれのダイを、パッケージのダイキャビティ内に前記ダイを取り付けて個々のパッケージされたフィルタを形成し、前記ダイの底面が前記パッケージ内の熱通路と熱接続されるように前記ダイキャビティ内に取り付ける工程を含む請求項７に記載の方法。  Further, each die formed by forming the plurality of dies is attached to the die in a die cavity of the package to form an individual packaged filter, and the bottom surface of the die is a heat path in the package. The method of claim 7 including mounting in the die cavity to be thermally connected. 前記ダイを前記パッケージにおける前記ダイキャビティ内に取り付ける工程が、前記パッケージにおける前記ダイキャビティ内に熱伝導性のエポキシを堆積させ、及び、前記熱伝導性のエポキシ表面に前記ダイを取り付け、その際前記熱伝導性のエポキシの下面が前記熱通路に接触していることを含む請求項８に記載の方法。  Mounting the die in the die cavity in the package deposits a thermally conductive epoxy in the die cavity in the package and attaches the die to the thermally conductive epoxy surface, wherein The method of claim 8, comprising comprising a thermally conductive epoxy undersurface in contact with the thermal passage. 更に、前記ダイシングラインに沿って前記基板（２００）を分割して前記複数のダイスを形成する前に、前記基板（２００）の前記表面の上に保護層を堆積するようにした請求項７に記載の方法。  The method of claim 7, further comprising depositing a protective layer on the surface of the substrate (200) before dividing the substrate (200) along the dicing line to form the plurality of dice. The method described. 前記基板（２００）の前記底面から材料を除去する工程が、前記基板を約４８０μｍ以下の厚さに薄くすることを含む請求項１に記載の方法。  The method of claim 1, wherein removing material from the bottom surface of the substrate (200) comprises thinning the substrate to a thickness of about 480 microns or less. 前記基板（２００）の前記底面から材料を除去する過程が、研磨面に対して前記基板（２００）の前記底面を配置し、及び、前記底面を研磨してそこから材料を除去することを含む請求項１に記載の方法。  The process of removing material from the bottom surface of the substrate (200) includes disposing the bottom surface of the substrate (200) relative to a polishing surface and polishing the bottom surface to remove material therefrom. The method of claim 1.
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Families Citing this family (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1202455A3 (en) * 2000-10-31 2004-09-15 Agilent Technologies, Inc. (a Delaware corporation) A packaging methodology for duplexers using fbars
DE10058339A1 (en) * 2000-11-24 2002-06-06 Infineon Technologies Ag Bulk acoustic wave filters
KR100398363B1 (en) * 2000-12-05 2003-09-19 삼성전기주식회사 Film bulk acoustic resonator and method for fabrication thereof
US6550664B2 (en) * 2000-12-09 2003-04-22 Agilent Technologies, Inc. Mounting film bulk acoustic resonators in microwave packages using flip chip bonding technology
JP2005236337A (en) * 2001-05-11 2005-09-02 Ube Ind Ltd Thin-film acoustic resonator and method of producing the same
JP3939939B2 (en) * 2001-07-17 2007-07-04 富士通株式会社 Method for manufacturing piezoelectric thin film resonant element
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
KR100506729B1 (en) * 2002-05-21 2005-08-08 삼성전기주식회사 Film bulk acoustic resonator and method for fabrication thereof
JP4039322B2 (en) * 2002-07-23 2008-01-30 株式会社村田製作所 Piezoelectric filter, duplexer, composite piezoelectric resonator and communication device, and frequency adjustment method of piezoelectric filter
US7312674B2 (en) * 2002-08-06 2007-12-25 The Charles Stark Draper Laboratory, Inc. Resonator system with a plurality of individual mechanically coupled resonators and method of making same
AU2003252992A1 (en) * 2002-08-13 2004-02-25 Trikon Technologies Limited Acoustic resonators
US6846423B1 (en) 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
US6877209B1 (en) 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
JP4541147B2 (en) * 2002-09-12 2010-09-08 エヌエックスピー ビー ヴィ Bulk acoustic wave resonator with means to suppress passband ripple in bulk acoustic wave filters
KR100517841B1 (en) * 2003-02-22 2005-09-30 주식회사 엠에스솔루션 FBAR band pass filter, Duplexer having the FBAR band pass filter and Methods for manufacturing the same
US7275292B2 (en) 2003-03-07 2007-10-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method for fabricating an acoustical resonator on a substrate
KR100599083B1 (en) * 2003-04-22 2006-07-12 삼성전자주식회사 Cantilevered type Film Bulk Acoustic Resonator fabrication method and Resonator fabricated by the same
US6924716B2 (en) * 2003-07-10 2005-08-02 Motorola, Inc. Method and apparatus for reduction of electromagnetic feed through in a SAW filter
KR100616511B1 (en) * 2003-09-24 2006-08-29 삼성전기주식회사 Film bulk acoustic resonator and a manufacturing method thereof
US7358831B2 (en) * 2003-10-30 2008-04-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with simplified packaging
US7362198B2 (en) * 2003-10-30 2008-04-22 Avago Technologies Wireless Ip (Singapore) Pte. Ltd Pass bandwidth control in decoupled stacked bulk acoustic resonator devices
US7019605B2 (en) * 2003-10-30 2006-03-28 Larson Iii John D Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth
DE602004000851T2 (en) 2003-10-30 2007-05-16 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically coupled thin film transformer with two piezoelectric elements having opposite C-axes orientation
US6946928B2 (en) * 2003-10-30 2005-09-20 Agilent Technologies, Inc. Thin-film acoustically-coupled transformer
US7113055B2 (en) * 2003-11-07 2006-09-26 Matsushita Electric Industrial Co., Ltd. Piezoelectric resonator, method of manufacturing piezoelectric resonator, and filter, duplexer, and communication device using piezoelectric resonator
US20050170670A1 (en) * 2003-11-17 2005-08-04 King William P. Patterning of sacrificial materials
US7057477B2 (en) * 2003-12-24 2006-06-06 Intel Corporation Integration of FBAR filter(s) and on-chip inductors
US20050181572A1 (en) * 2004-02-13 2005-08-18 Verhoeven Tracy B. Method for acoustically isolating an acoustic resonator from a substrate
WO2005099088A1 (en) * 2004-03-26 2005-10-20 Cypress Semiconductor Corp. Integrated circuit having one or more conductive devices formed over a saw and/or mems device
US7332061B2 (en) * 2004-03-30 2008-02-19 Intel Corporation Integration of multiple frequency band FBAR filters
KR100622955B1 (en) * 2004-04-06 2006-09-18 삼성전자주식회사 Film bulk acoustic resonator and the method thereof
US7114252B2 (en) * 2004-06-17 2006-10-03 Toko, Inc. Large scale simultaneous circuit encapsulating apparatus
US7615833B2 (en) 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same
US20060017352A1 (en) * 2004-07-20 2006-01-26 Aram Tanielian Thin device and method of fabrication
US7388454B2 (en) * 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
DE102004049196B4 (en) * 2004-10-08 2010-01-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Filter structure and method for designing a filter
US8981876B2 (en) * 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US7791434B2 (en) * 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
WO2006067949A1 (en) * 2004-12-24 2006-06-29 Murata Manufacturing Co., Ltd. Piezoelectric thin film resonator and method for manufacturing same
US7427819B2 (en) * 2005-03-04 2008-09-23 Avago Wireless Ip Pte Ltd Film-bulk acoustic wave resonator with motion plate and method
US7369013B2 (en) * 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US7436269B2 (en) 2005-04-18 2008-10-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustically coupled resonators and method of making the same
US7562429B2 (en) * 2005-06-20 2009-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Suspended device and method of making
US7443269B2 (en) * 2005-07-27 2008-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit
US7868522B2 (en) 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
US7391286B2 (en) * 2005-10-06 2008-06-24 Avago Wireless Ip Pte Ltd Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters
US7423503B2 (en) 2005-10-18 2008-09-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating film acoustically-coupled transformer
US7675390B2 (en) * 2005-10-18 2010-03-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator
US7425787B2 (en) 2005-10-18 2008-09-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator
US7525398B2 (en) * 2005-10-18 2009-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically communicating data signals across an electrical isolation barrier
US7737807B2 (en) 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
US7463499B2 (en) * 2005-10-31 2008-12-09 Avago Technologies General Ip (Singapore) Pte Ltd. AC-DC power converter
US7561009B2 (en) * 2005-11-30 2009-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with temperature compensation
US7612636B2 (en) * 2006-01-30 2009-11-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Impedance transforming bulk acoustic wave baluns
US7746677B2 (en) 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US20070210724A1 (en) * 2006-03-09 2007-09-13 Mark Unkrich Power adapter and DC-DC converter having acoustic transformer
US7479685B2 (en) * 2006-03-10 2009-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
US7760049B2 (en) * 2006-05-30 2010-07-20 Panasonic Corporation Film bulk acoustic resonator, filter, and fabrication method thereof
US7629865B2 (en) * 2006-05-31 2009-12-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters
JP2008005186A (en) * 2006-06-22 2008-01-10 Ube Ind Ltd Thin film piezoelectric resonator and thin film piezoelectric filter
US7508286B2 (en) * 2006-09-28 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. HBAR oscillator and method of manufacture
US20080202239A1 (en) * 2007-02-28 2008-08-28 Fazzio R Shane Piezoelectric acceleration sensor
US7651891B1 (en) * 2007-08-09 2010-01-26 National Semiconductor Corporation Integrated circuit package with stress reduction
US7791435B2 (en) * 2007-09-28 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single stack coupled resonators having differential output
US7855618B2 (en) * 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
US7732977B2 (en) * 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
US10129656B2 (en) 2009-01-30 2018-11-13 Avago Technologies International Sales Pte. Limited Active temperature control of piezoelectric membrane-based micro-electromechanical devices
US20100277034A1 (en) * 2009-03-11 2010-11-04 Rajarishi Sinha Array of baw resonators with mask controlled resonant frequencies
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US9327316B2 (en) * 2009-06-30 2016-05-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Multi-frequency acoustic array
US8193877B2 (en) * 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
DE102010008774B4 (en) * 2010-02-22 2015-07-23 Epcos Ag Microacoustic filter with compensated crosstalk and compensation method
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
CN102315830A (en) * 2011-04-25 2012-01-11 浙江大学 Manufacturing method of film bulk acoustic resonator
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
CN104767500B (en) * 2014-01-03 2018-11-09 佛山市艾佛光通科技有限公司 Cavity type thin film bulk acoustic wave resonator and preparation method thereof
US9673384B2 (en) 2014-06-06 2017-06-06 Akoustis, Inc. Resonance circuit with a single crystal capacitor dielectric material
US9571061B2 (en) 2014-06-06 2017-02-14 Akoustis, Inc. Integrated circuit configured with two or more single crystal acoustic resonator devices
US9537465B1 (en) 2014-06-06 2017-01-03 Akoustis, Inc. Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate
US9805966B2 (en) 2014-07-25 2017-10-31 Akoustis, Inc. Wafer scale packaging
US9912314B2 (en) 2014-07-25 2018-03-06 Akoustics, Inc. Single crystal acoustic resonator and bulk acoustic wave filter
US9716581B2 (en) 2014-07-31 2017-07-25 Akoustis, Inc. Mobile communication device configured with a single crystal piezo resonator structure
US9917568B2 (en) 2014-08-26 2018-03-13 Akoustis, Inc. Membrane substrate structure for single crystal acoustic resonator device
US9444428B2 (en) * 2014-08-28 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonators comprising backside vias
US10979022B2 (en) 2016-03-11 2021-04-13 Akoustis, Inc. 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit
US10979025B2 (en) 2016-03-11 2021-04-13 Akoustis, Inc. 5G band n79 acoustic wave resonator RF filter circuit
US11356071B2 (en) 2016-03-11 2022-06-07 Akoustis, Inc. Piezoelectric acoustic resonator with improved TCF manufactured with piezoelectric thin film transfer process
US10523180B2 (en) 2016-03-11 2019-12-31 Akoustis, Inc. Method and structure for single crystal acoustic resonator devices using thermal recrystallization
US10985732B2 (en) 2016-03-11 2021-04-20 Akoustis, Inc. 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit
US11476825B2 (en) 2016-03-11 2022-10-18 Akoustis, Inc. 5.5 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit
US11677372B2 (en) 2016-03-11 2023-06-13 Akoustis, Inc. Piezoelectric acoustic resonator with dielectric protective layer manufactured with piezoelectric thin film transfer process
US11558023B2 (en) 2016-03-11 2023-01-17 Akoustis, Inc. Method for fabricating an acoustic resonator device
US10979026B2 (en) 2016-03-11 2021-04-13 Akoustis, Inc. 5.5 GHz Wi-fi 5G coexistence acoustic wave resonator RF filter circuit
US11316496B2 (en) 2016-03-11 2022-04-26 Akoustis, Inc. Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material
US11184079B2 (en) 2016-03-11 2021-11-23 Akoustis, Inc. Front end module for 5.5 GHz Wi-Fi acoustic wave resonator RF filter circuit
US11177868B2 (en) 2016-03-11 2021-11-16 Akoustis, Inc. Front end module for 6.5 GHz Wi-Fi acoustic wave resonator RF filter circuit
US11451213B2 (en) 2016-03-11 2022-09-20 Akoustis, Inc. 5G n79 Wi-Fi acoustic triplexer circuit
US11394451B2 (en) 2016-03-11 2022-07-19 Akoustis, Inc. Front end module for 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit
US10355659B2 (en) 2016-03-11 2019-07-16 Akoustis, Inc. Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
US11418169B2 (en) 2016-03-11 2022-08-16 Akoustis, Inc. 5G n41 2.6 GHz band acoustic wave resonator RF filter circuit
US11581866B2 (en) 2016-03-11 2023-02-14 Akoustis, Inc. RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same
US11689186B2 (en) 2016-03-11 2023-06-27 Akoustis, Inc. 5.5 GHz Wi-Fi 5G coexistence acoustic wave resonator RF filter circuit
US10615773B2 (en) 2017-09-11 2020-04-07 Akoustis, Inc. Wireless communication infrastructure system configured with a single crystal piezo resonator and filter structure
US20210257993A1 (en) 2016-03-11 2021-08-19 Akoustis, Inc. Acoustic wave resonator rf filter circuit device
US11411168B2 (en) 2017-10-16 2022-08-09 Akoustis, Inc. Methods of forming group III piezoelectric thin films via sputtering
US11424728B2 (en) 2016-03-11 2022-08-23 Akoustis, Inc. Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
US10581398B2 (en) 2016-03-11 2020-03-03 Akoustis, Inc. Method of manufacture for single crystal acoustic resonator devices using micro-vias
US11736177B2 (en) 2016-03-11 2023-08-22 Akoustis Inc. Front end modules for 5.6 GHz and 6.6 GHz Wi-Fi acoustic wave resonator RF filter circuits
US11832521B2 (en) 2017-10-16 2023-11-28 Akoustis, Inc. Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers
US11683021B2 (en) 2016-03-11 2023-06-20 Akoustis, Inc. 4.5G 3.55-3.7 GHz band bulk acoustic wave resonator RF filter circuit
US11070184B2 (en) 2016-03-11 2021-07-20 Akoustis, Inc. Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
US11063576B2 (en) 2016-03-11 2021-07-13 Akoustis, Inc. Front end module for 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit
US10110189B2 (en) 2016-11-02 2018-10-23 Akoustis, Inc. Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications
US10217930B1 (en) 2016-03-11 2019-02-26 Akoustis, Inc. Method of manufacture for single crystal acoustic resonator devices using micro-vias
US10979024B2 (en) 2016-03-11 2021-04-13 Akoustis, Inc. 5.2 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit
US10979023B2 (en) 2016-03-11 2021-04-13 Akoustis, Inc. 5.9 GHz c-V2X and DSRC acoustic wave resonator RF filter circuit
US10673513B2 (en) 2016-03-11 2020-06-02 Akoustis, Inc. Front end module for 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit
US11411169B2 (en) 2017-10-16 2022-08-09 Akoustis, Inc. Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
US11895920B2 (en) 2016-08-15 2024-02-06 Akoustis, Inc. Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
US10431580B1 (en) 2017-01-12 2019-10-01 Akoustis, Inc. Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
US11856858B2 (en) 2017-10-16 2023-12-26 Akoustis, Inc. Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films
US11557716B2 (en) 2018-02-20 2023-01-17 Akoustis, Inc. Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction
WO2020046995A1 (en) 2018-08-27 2020-03-05 Akoustis, Inc. High power bulk acoustic wave resonator filter devices
WO2020082245A1 (en) * 2018-10-23 2020-04-30 华为技术有限公司 Method for preparing monolithic integrated baw resonator
US11611330B2 (en) * 2019-01-15 2023-03-21 University Of Florida Research Foundation, Incorporated Micro-electro-mechanical resonators
CN112039457A (en) * 2019-07-19 2020-12-04 中芯集成电路（宁波）有限公司上海分公司 Method for manufacturing film bulk acoustic wave resonator
US11618968B2 (en) 2020-02-07 2023-04-04 Akoustis, Inc. Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers
US12102010B2 (en) 2020-03-05 2024-09-24 Akoustis, Inc. Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices
CN111446360A (en) * 2020-06-12 2020-07-24 深圳市汇顶科技股份有限公司 Ultrasonic transducer preparation method, ultrasonic transducer and information acquisition element
US11496108B2 (en) 2020-08-17 2022-11-08 Akoustis, Inc. RF BAW resonator filter architecture for 6.5GHz Wi-Fi 6E coexistence and other ultra-wideband applications
US11901880B2 (en) 2021-01-18 2024-02-13 Akoustis, Inc. 5 and 6 GHz Wi-Fi coexistence acoustic wave resonator RF diplexer circuit

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732114A (en) * 1980-08-05 1982-02-20 Fuji Elelctrochem Co Ltd Manufacture of chip ceramic filter
JPS62158332A (en) * 1986-01-06 1987-07-14 Oki Electric Ind Co Ltd Method of grinding back surface of semiconductor substrate
JPH01303745A (en) * 1988-06-01 1989-12-07 Hitachi Ltd Package for solid-state image sensing element
US5034753A (en) * 1989-06-01 1991-07-23 Weber Robert J Acoustically coupled antenna
JPH03108807A (en) * 1989-09-21 1991-05-09 Seiko Electronic Components Ltd Manufacture of thin profile crystal resonator package
US5233259A (en) 1991-02-19 1993-08-03 Westinghouse Electric Corp. Lateral field FBAR
US5153476A (en) 1991-03-11 1992-10-06 The United States Of America As Represented By The Secretary Of The Army Acoustic vibrator with variable sensitivity to external acceleration
US5166646A (en) 1992-02-07 1992-11-24 Motorola, Inc. Integrated tunable resonators for use in oscillators and filters
US5382930A (en) * 1992-12-21 1995-01-17 Trw Inc. Monolithic multipole filters made of thin film stacked crystal filters
JPH06204776A (en) * 1992-12-28 1994-07-22 Oki Electric Ind Co Ltd Manufacture of piezoelectric thin film vibrator
JPH06350371A (en) * 1993-06-10 1994-12-22 Matsushita Electric Ind Co Ltd Manufacture of piezoelectric device
JPH0746072A (en) * 1993-08-03 1995-02-14 Matsushita Electric Ind Co Ltd Manufacture of crystal resonator
US5446306A (en) 1993-12-13 1995-08-29 Trw Inc. Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR)
US5587620A (en) 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
US5692279A (en) * 1995-08-17 1997-12-02 Motorola Method of making a monolithic thin film resonator lattice filter
JPH10200369A (en) * 1997-01-13 1998-07-31 Mitsubishi Materials Corp Piezoelectric thin film resonator
US5714917A (en) 1996-10-02 1998-02-03 Nokia Mobile Phones Limited Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation
US5780713A (en) 1996-11-19 1998-07-14 Hewlett-Packard Company Post-fabrication tuning of acoustic resonators
JPH10178327A (en) * 1996-12-19 1998-06-30 Toshiba Corp Surface acoustic wave device
JP3249758B2 (en) * 1997-03-11 2002-01-21 ティーディーケイ株式会社 Surface acoustic wave filter device
US5872493A (en) * 1997-03-13 1999-02-16 Nokia Mobile Phones, Ltd. Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
JPH10270939A (en) * 1997-03-25 1998-10-09 Mitsubishi Materials Corp Voltage controlled oscillator
US5853601A (en) * 1997-04-03 1998-12-29 Northrop Grumman Corporation Top-via etch technique for forming dielectric membranes
US5883575A (en) 1997-08-12 1999-03-16 Hewlett-Packard Company RF-tags utilizing thin film bulk wave acoustic resonators
JPH11195947A (en) * 1998-01-06 1999-07-21 Hokuriku Electric Ind Co Ltd Manufacture of surface acoustic wave device
US6060818A (en) 1998-06-02 2000-05-09 Hewlett-Packard Company SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
JP2000049561A (en) * 1998-07-24 2000-02-18 Toyo Commun Equip Co Ltd Structure of piezoelectric vibrator and its manufacture
JP3289684B2 (en) * 1998-09-11 2002-06-10 日本電気株式会社 Plasma display panel, plasma display module and driving method thereof

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