CN116633310B - Film bulk acoustic resonator and preparation method thereof - Google Patents
Film bulk acoustic resonator and preparation method thereof Download PDFInfo
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- CN116633310B CN116633310B CN202310890269.0A CN202310890269A CN116633310B CN 116633310 B CN116633310 B CN 116633310B CN 202310890269 A CN202310890269 A CN 202310890269A CN 116633310 B CN116633310 B CN 116633310B
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 136
- 239000000725 suspension Substances 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a film bulk acoustic resonator and a preparation method thereof, wherein the resonator comprises a resonance area and an edge area surrounding the resonance area, and the resonance area comprises a substrate, a cavity, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially laminated; the part outside the top electrode of the resonator is an edge area, the edge area comprises a supporting part supported on the first surface of the substrate and a suspension part positioned between the supporting part and the resonance area, and the supporting part and the suspension part both comprise piezoelectric layers; the suspension portion further includes a first protrusion having a surface adjacent the substrate at a distance from the first surface of the substrate that is less than a distance between the surface of the other region of the suspension portion adjacent the substrate and the first surface of the substrate; and the surface of the suspension adjacent the substrate is not in contact with the first surface of the substrate. The invention can reflect the transverse sound wave propagating along the resonator plane for multiple times, thereby effectively solving the problem that the transverse sound wave energy of the traditional film bulk sound wave resonator leaks to the substrate and greatly improving the Q value of the resonator.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to a film bulk acoustic resonator and a preparation method thereof.
Background
With the rapid development of 5G communication technology, the application and the requirement of the radio frequency filter are continuously upgraded, the working frequency of the radio frequency filter is higher and higher, the bandwidth is wider and wider, the insertion loss is lower and the performance requirement on the whole radio frequency filter is higher and higher. In order to meet the filter performance requirements at high frequencies, thin Film Bulk Acoustic Resonators (FBARs) are the mainstay of research in the present. Fig. 1 is a schematic structural view of a conventional thin film bulk acoustic resonator, which is connected to a substrate 10 through a bottom electrode 20 and a piezoelectric layer 30, supporting the entire resonance region. The FBAR resonator has a sandwich structure of the top electrode 40-the piezoelectric layer 30-the bottom electrode 20, but the design has limitation, and the FBAR of the prior art generally has lateral parasitic clutter and leaks, which affects the performance of the thin film bulk acoustic resonator.
Disclosure of Invention
The invention provides a film bulk acoustic resonator and a preparation method thereof, which are used for reducing the problem of outwards propagation and leakage of transverse wave energy and improving the Q value of the resonator.
According to an aspect of the present invention, there is provided a thin film bulk acoustic resonator, the resonator comprising a resonance region and an edge region surrounding the resonance region, the resonance region comprising a substrate, a cavity, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially stacked; the first surface of the substrate adjacent to the bottom electrode is a plane; the part outside the top electrode of the resonator is an edge area, the edge area comprises a supporting part supported on the first surface of the substrate and a suspension part positioned between the supporting part and the resonance area, and the supporting part and the suspension part both comprise piezoelectric layers;
the suspension portion further includes a first protrusion having a surface adjacent the substrate at a distance from the first surface of the substrate that is less than a distance between the surface of the other region of the suspension portion adjacent the substrate and the first surface of the substrate; and the surface of the suspension adjacent the substrate is not in contact with the first surface of the substrate.
Optionally, the bottom electrode is only disposed in the resonance region;
alternatively, the edge region further comprises a bottom electrode, and extends from the resonance region to an edge of the edge region away from the resonance region;
alternatively, the suspending portion further includes a bottom electrode extending to an edge of the first protruding portion adjacent to one side of the resonance region.
Optionally, the edge region further includes a second protruding portion located at a side of the supporting portion away from the resonance region, and a supporting layer is disposed between the second protruding portion and the substrate.
Optionally, the surface of the first protrusion adjacent to the substrate is 1-1.5 μm away from the first surface of the substrate;
the distance between the surface of the floating part adjacent to the substrate and the first surface of the substrate except the first protruding part is 2-3 μm;
the width of the first protruding portion and the width of the supporting portion are both 5-10 μm along the direction in which the resonance region points to the edge region.
Optionally, the piezoelectric layer further comprises a release hole;
the release hole is arranged on the first protruding part of the suspension part, or the release hole is arranged between the first protruding part and the supporting part;
the release hole penetrates the piezoelectric layer and the bottom electrode in the thickness direction of the piezoelectric layer.
Optionally, the material of the piezoelectric layer includes at least one of polycrystalline or monocrystalline materials of AlN, alScN, liNbO and LiTaO3, and ferroelectric monocrystalline materials;
the materials of the bottom electrode and the top electrode each include at least one of molybdenum, tungsten, platinum, and gold.
According to another aspect of the present invention, there is provided a method of manufacturing a thin film bulk acoustic resonator, the resonator including a resonance region and an edge region, comprising:
providing a substrate; the first surface of the substrate is a plane;
a sacrificial layer is arranged on the first surface of the substrate, a first groove and a second groove are formed on the sacrificial layer, the first groove and the second groove are located in the edge area, the first groove is arranged on one side, away from the resonance area, of the second groove, the first groove penetrates through the sacrificial layer, and the depth of the second groove is smaller than the thickness of the sacrificial layer;
sequentially forming a bottom electrode, a piezoelectric layer and a top electrode on the sacrificial layer; the resonator comprises a substrate, a sacrificial layer, a bottom electrode, a piezoelectric layer and a top electrode, wherein the substrate, the sacrificial layer, the bottom electrode, the piezoelectric layer and the top electrode are sequentially stacked, the part outside the top electrode of the resonator is an edge region, the edge region comprises a supporting part supported on the first surface of the substrate and a suspension part positioned between the supporting part and the resonance region, and the supporting part and the suspension part both comprise the piezoelectric layer; the suspension portion further includes a first protrusion, a distance between a surface of the first protrusion adjacent to the substrate and the first surface of the substrate being smaller than a distance between a surface of the other region of the suspension portion adjacent to the substrate and the first surface of the substrate, the surface of the suspension portion adjacent to the substrate being not in contact with the first surface of the substrate; the supporting part is positioned in the first groove, and the first protruding part is positioned in the second groove;
the sacrificial layer is removed and a cavity is formed in the resonator between the bottom electrode and the substrate.
Optionally, sequentially forming the bottom electrode, the piezoelectric layer, and the top electrode on the sacrificial layer includes:
forming a first electrode layer in the resonance region and the edge region;
removing the first electrode layer positioned on one side of the boundary, adjacent to the resonance region, of the second groove and away from the resonance region to form a bottom electrode;
forming a piezoelectric layer on the surface of the bottom electrode;
forming a second electrode layer on the surface of the piezoelectric layer;
and removing the second electrode layer outside the resonance region to form a top electrode.
Optionally, sequentially forming the bottom electrode, the piezoelectric layer, and the top electrode on the sacrificial layer includes:
forming a bottom electrode and a piezoelectric layer in the resonance region and the edge region;
forming a second electrode layer on the surface of the piezoelectric layer;
and removing the second electrode layer outside the resonance region to form a top electrode.
Optionally, disposing a sacrificial layer on the substrate includes:
depositing a first sacrificial layer on a substrate;
etching the first sacrificial layer to form a third groove, wherein the depth of the third groove is equal to the thickness of the first sacrificial layer;
depositing a second sacrificial layer on the first sacrificial layer, and removing the second sacrificial layer at the third groove to form a first groove;
etching the second sacrificial layer on one side of the first groove adjacent to the resonance area to form a second groove;
alternatively, disposing a sacrificial layer on the substrate, comprising:
a sacrificial layer is deposited over the substrate,
etching the sacrificial layer to form a first groove;
and etching the sacrificial layer on one side of the first groove adjacent to the resonance area to form a second groove.
The thin film bulk acoustic resonator provided by the technical scheme of the embodiment of the invention comprises a resonance area and an edge area surrounding the resonance area, wherein the resonance area comprises a substrate, a cavity, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially laminated; the first surface of the substrate adjacent to the bottom electrode is a plane; the part outside the top electrode of the resonator is an edge area, the edge area comprises a supporting part supported on the first surface of the substrate and a suspension part positioned between the supporting part and the resonance area, and the supporting part and the suspension part both comprise piezoelectric layers; the suspension portion further includes a first protrusion having a surface adjacent the substrate at a distance from the first surface of the substrate that is less than a distance between the surface of the other region of the suspension portion adjacent the substrate and the first surface of the substrate; and the surface of the suspension adjacent the substrate is not in contact with the first surface of the substrate. According to the film bulk acoustic resonator provided by the invention, the supporting part and the suspending part (comprising the first protruding part) are arranged in the edge area, so that the impedance value of the resonator at the parallel resonant frequency is improved, the supporting part and the first protruding part can reflect the transverse acoustic wave propagating along the resonator plane for multiple times, the problem that the transverse acoustic wave energy of the traditional film bulk acoustic resonator leaks to the substrate can be effectively solved, and the Q value of the resonator is greatly improved.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a conventional thin film bulk acoustic resonator;
fig. 2 is a schematic structural diagram of a thin film bulk acoustic resonator according to a first embodiment of the present invention;
FIG. 3 is a simulated impedance diagram of a conventional thin film bulk acoustic resonator;
FIG. 4 is a simulated impedance diagram of a thin film bulk acoustic resonator according to a first embodiment of the present invention;
FIG. 5 is a schematic diagram of a structure of a thin film bulk acoustic resonator according to a first embodiment of the present invention;
FIG. 6 is a schematic diagram of a structure of a thin film bulk acoustic resonator according to a first embodiment of the present invention;
FIG. 7 is a schematic diagram of a structure of a thin film bulk acoustic resonator according to a first embodiment of the present invention;
FIG. 8 is a flowchart of a method for fabricating a thin film bulk acoustic resonator according to a second embodiment of the present invention;
fig. 9 is a schematic diagram of a sacrificial layer structure of a thin film bulk acoustic resonator according to a second embodiment of the present invention;
fig. 10 is a schematic diagram of a manufacturing process of a thin film bulk acoustic resonator according to a second embodiment of the present invention;
FIG. 11 is a schematic diagram of a manufacturing process of a thin film bulk acoustic resonator according to a second embodiment of the present invention;
fig. 12 is a schematic view of a preparation process of a thin film bulk acoustic resonator according to a second embodiment of the present invention;
fig. 13 is a schematic view of a preparation process of a thin film bulk acoustic resonator according to a second embodiment of the present invention;
fig. 14 is a schematic view of a preparation process of a thin film bulk acoustic resonator according to a second embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Example 1
An embodiment of the present invention provides a thin film bulk acoustic resonator, and fig. 2 is a schematic structural diagram of a thin film bulk acoustic resonator provided in the first embodiment of the present invention, referring to fig. 2, the resonator includes a resonance region 50 and an edge region 60 surrounding the resonance region 50, and the resonance region 50 includes a substrate 10, a cavity 11, a bottom electrode 20, a piezoelectric layer 30, and a top electrode 40 that are sequentially stacked; the first surface of the substrate 10 adjacent to the bottom electrode 20 is planar; the portion other than the resonator top electrode 40 is an edge region 60, the edge region 60 including a support portion 31 supported on the first surface of the substrate 10 and a suspended portion 32 located between the support portion 31 and the resonance region 50, the support portion 31 and the suspended portion 32 each including the piezoelectric layer 30; the suspension 32 further includes a first protrusion 33, a distance between a surface of the first protrusion 33 adjacent to the substrate 10 and the first surface of the substrate 10 being smaller than a distance between a surface of the other region of the suspension 32 adjacent to the substrate 10 and the first surface of the substrate 10; and the surface of the suspended portion 32 adjacent to the substrate 10 is not in contact with the first surface of the substrate 10.
Wherein the material of the substrate 10 may be glass, alumina (Al 2 O 3 ) Or high resistance silicon, may prevent electric leakage or interference of the bottom electrode 20, and the materials of the bottom electrode 20 and the top electrode 40 may be metal materials, and may be, for example, molybdenum, tungsten, platinum, and gold. The thickness of the piezoelectric layer 30 is uniformly arranged in the direction in which the top electrode 40 is directed toward the bottom electrode 20, and the thickness is uniform at each location, so that if there is a protrusion on the first surface of the piezoelectric layer 30 adjacent to the bottom electrode 20, there is the same recess at the corresponding location on the second surface of the piezoelectric layer 30 away from the bottom electrode 20.
The thin film bulk acoustic resonator operates on the principle that when alternating voltages are applied to the bottom electrode 20 and the top electrode 40 of the resonator, the piezoelectric layer 30 generates an inverse piezoelectric effect, and in this process, the piezoelectric layer 30 contracts and expands and deforms according to the change of the alternating electric field, and this periodic deformation forms periodic vibration, which excites bulk acoustic waves, and when the frequency of the excited bulk acoustic waves is the same as the resonance frequency of the resonance region 50 determined by the total thickness of the bottom electrode 20, the piezoelectric layer 30 and the top electrode 40, resonance is formed. Fig. 3 is a simulated impedance diagram of a conventional film bulk acoustic resonator, referring to fig. 3, the abscissa is frequency, and the ordinate is impedance value, so that it can be seen that the impedance value of the conventional film bulk acoustic resonator at the parallel resonant frequency is 2187 Ω, and fig. 4 is a simulated impedance diagram of the film bulk acoustic resonator provided by the first embodiment of the present invention, referring to fig. 4, it can be seen that the impedance value of the film bulk acoustic resonator at the parallel resonant frequency is 2708 Ω in the embodiment of the present invention, compared with the conventional film bulk acoustic resonator structure, the impedance value is obviously improved, which indicates that the structure of the film bulk acoustic resonator in the embodiment of the present invention effectively reduces leakage of transverse wave energy, and is helpful for improving the Q value of the resonator. The Q value is an important index for evaluating the performance of the resonator, and the conventional FBAR resonator suffers from interference of transverse parasitic clutter on the electrical characteristics of the resonator, so that the Q value of the FBAR resonator is reduced, and the quality of the high-frequency FBAR resonator is greatly affected.
The thin film bulk acoustic resonator provided by the technical scheme of the embodiment of the invention comprises a resonance area 50 and an edge area 60 surrounding the resonance area 50, wherein the resonance area 50 comprises a substrate 10, a cavity 11, a bottom electrode 20, a piezoelectric layer 30 and a top electrode 40 which are sequentially stacked; the first surface of the substrate 10 adjacent to the bottom electrode 20 is planar; the portion other than the resonator top electrode 40 is an edge region 60, the edge region 60 including a support portion 31 supported on the first surface of the substrate 10 and a suspended portion 32 located between the support portion 31 and the resonance region 50, the support portion 31 and the suspended portion 32 each including the piezoelectric layer 30; the suspension 32 further includes a first protrusion 33, a distance between a surface of the first protrusion 33 adjacent to the substrate 10 and the first surface of the substrate 10 being smaller than a distance between a surface of the other region of the suspension 32 adjacent to the substrate 10 and the first surface of the substrate 10; and the surface of the suspended portion 32 adjacent to the substrate 10 is not in contact with the first surface of the substrate 10. According to the film bulk acoustic resonator provided by the invention, the supporting part 31 and the suspending part 32 (comprising the first protruding part 33) are arranged in the edge region 60, so that the impedance value of the resonator at the parallel resonance frequency is improved, the supporting part 31 and the first protruding part 33 can reflect transverse acoustic waves propagating along the resonator plane for multiple times, the problem that transverse acoustic wave energy of the traditional film bulk acoustic resonator leaks to the substrate can be effectively solved, and the Q value of the resonator is greatly improved.
Alternatively, the bottom electrode 20 is disposed only in the resonance region 50; alternatively, referring to fig. 2, the edge region 60 further includes the bottom electrode 20, and extends from the resonance region 50 to an edge of the edge region 60 remote from the resonance region 50; alternatively, fig. 5 is a schematic structural diagram of yet another film bulk acoustic resonator according to a first embodiment of the present invention, and referring to fig. 5, the suspended portion 32 further includes a bottom electrode 20, and the bottom electrode 20 extends to an edge of the first protruding portion 33 adjacent to a side of the resonance region 50.
The edge region 60 further includes the bottom electrode 20, and extends from the resonance region 50 to the edge of the edge region 60 away from the resonance region 50, so that the bottom electrode 20 can be directly deposited on the whole surface, and the process is simple.
The bottom electrode 20 may be disposed only in the resonance region 50 by etching the bottom electrode 20 of the edge region, or the bottom electrode 20 may be extended to an edge of the first protrusion 33 adjacent to one side of the resonance region 50, and removing the bottom electrode 20 under the support portion 31 and the suspended portion 32 may ensure uniformity of crystallization of the piezoelectric layer 30, thereby increasing the strength of the resonator edge region 60. Since the crystal orientation tends to be perpendicular to the electrode surface when the piezoelectric layer 30 is grown, the electrodes under the supporting portion 31 and the suspending portion 32 are liable to cause the occurrence of defects in the piezoelectric layer 30.
Optionally, fig. 6 is a schematic structural diagram of still another film bulk acoustic resonator according to the first embodiment of the present invention, and referring to fig. 6, the edge region 60 further includes a second protruding portion located on a side of the supporting portion 31 away from the resonance region 50, and a supporting layer 70 is disposed between the second protruding portion and the substrate 10.
The material of the support layer 70 may be silicon dioxide.
Specifically, a sacrificial layer may be provided on the first surface of the substrate 10, and the bottom electrode 20, the piezoelectric layer 30, and the top electrode may be formed on the sacrificial layer, and then the sacrificial layer may be removed. The sacrificial layer between the second protruding portion of the support portion 31 on the side away from the resonance region 50 and the substrate 10, that is, the support layer 70 may not be removed.
Alternatively, referring to fig. 5, the distance S1 between the surface of the first protrusion 33 adjacent to the substrate 10 and the first surface of the substrate 10 is 1 to 1.5 μm; the distance S2 between the surface of the suspended portion 32 adjacent to the substrate 10 and the first surface of the substrate 10 except for the first protruding portion 33 is 2 to 3 μm; the width S3 of the first projection and the width S4 of the support are both 5-10 μm in the direction in which the resonance region points to the edge region.
Wherein, the distance S1 between the surface of the first protruding part 33 adjacent to the substrate 10 and the first surface of the substrate 10, and the distance S2 between the surface of the floating part 32 adjacent to the substrate 10 and the first surface of the substrate 10 except for the first protruding part 33 are determined by the thickness of the sacrificial layer. The first protruding portion 33 and the supporting portion 31 are each formed by providing a groove on the sacrificial layer, and the width S3 of the first protruding portion 33 and the width S4 of the supporting portion 31 are determined by the etching width of the groove.
Optionally, the piezoelectric layer further includes a release hole, where the release hole is disposed on the first protruding portion of the suspension portion, or fig. 7 is a schematic structural diagram of yet another film bulk acoustic resonator according to the first embodiment of the present invention, and referring to fig. 7, the release hole 80 is disposed between the first protruding portion 33 and the supporting portion 31; the release hole 80 penetrates the piezoelectric layer 30 and the bottom electrode 20 in the thickness direction of the piezoelectric layer 30.
The supporting portion 31 and the first protruding portion 33 can reflect the transverse sound wave propagating along the resonator plane for multiple times due to the difference of acoustic impedances in the thickness direction, so that the problem that the transverse sound wave energy of the traditional film bulk acoustic resonator leaks to the substrate can be effectively solved, and the Q value of the resonator is greatly improved. In the resonator structure forming process, it is necessary to provide a sacrificial layer on the first surface of the substrate 10, and form the bottom electrode 20, the piezoelectric layer 30, and the top electrode 40 on the sacrificial layer, the sacrificial layer may be removed by etching the release hole 80 formed by the piezoelectric layer 30 and the bottom electrode 20, and after the sacrificial layer is removed, a cavity may be formed between the substrate 10 and the bottom electrode 20.
Optionally, the material of the piezoelectric layer includes at least one of polycrystalline or monocrystalline materials of AlN, alScN, liNbO and LiTaO3, and ferroelectric monocrystalline materials; the material of the bottom electrode and the top electrode may be at least one of molybdenum, tungsten, platinum, and gold.
Among them, alN, alScN, liNbO and LiTaO3 are polycrystalline or monocrystalline materials, the piezoelectric performance is better, the process is mature, but In order to improve that the electromechanical coupling coefficient of the traditional piezoelectric layer material can not meet the requirement of larger bandwidth, the piezoelectric layer can also adopt ferroelectric monocrystal with high piezoelectric coefficient, and for example, PMN-PT monocrystal with indium (In) doped composite perovskite structure can be adopted.
Example two
The embodiment of the invention provides a method for manufacturing a film bulk acoustic resonator on the basis of the above embodiment, and fig. 8 is a flowchart of a method for manufacturing a film bulk acoustic resonator according to a second embodiment of the invention, where the resonator includes a resonance region and an edge region. Referring to fig. 8, the method includes:
step 110, providing a substrate; the first surface of the substrate is planar.
Wherein, the substrate can be a silicon substrate, and the material of the bottom electrode can be molybdenum.
Step 120, a sacrificial layer is disposed on the first surface of the substrate, and a first groove and a second groove are formed on the sacrificial layer, wherein the first groove and the second groove are located in the edge area, the first groove is disposed on one side, away from the resonance area, of the second groove, the first groove penetrates through the sacrificial layer, and the depth of the second groove is smaller than the thickness of the sacrificial layer.
Fig. 9 is a schematic diagram of a sacrificial layer structure of a thin film bulk acoustic resonator according to a second embodiment of the present invention, and referring to fig. 9, a material of the sacrificial layer 90 may be silicon dioxide, deposition of the sacrificial layer 90 may be performed on the substrate 10, and the first recess 91 and the second recess 92 are etched by patterning the sacrificial layer 90.
130, sequentially forming a bottom electrode, a piezoelectric layer and a top electrode on the sacrificial layer; the resonator comprises a substrate, a sacrificial layer, a bottom electrode, a piezoelectric layer and a top electrode, wherein the substrate, the sacrificial layer, the bottom electrode, the piezoelectric layer and the top electrode are sequentially stacked, the part outside the top electrode of the resonator is an edge region, the edge region comprises a supporting part supported on the first surface of the substrate and a suspension part positioned between the supporting part and the resonance region, and the supporting part and the suspension part both comprise the piezoelectric layer; the suspension portion further includes a first protrusion, a distance between a surface of the first protrusion adjacent to the substrate and the first surface of the substrate being smaller than a distance between a surface of the other region of the suspension portion adjacent to the substrate and the first surface of the substrate, the surface of the suspension portion adjacent to the substrate being not in contact with the first surface of the substrate; the supporting part is positioned in the first groove, and the first protruding part is positioned in the second groove.
Wherein, the bottom electrode, the piezoelectric layer and the top electrode can be uniformly formed in sequence through a deposition process.
And 140, removing the sacrificial layer, and forming a cavity between the bottom electrode and the substrate in the resonator.
Wherein, referring to fig. 7 and 9, a release hole 80 is formed by etching the piezoelectric layer 30 and the bottom electrode 20, a solution that can corrode the sacrificial layer 90 is introduced from the release hole 80 such that the sacrificial layer 90 is removed to form a cavity between the bottom electrode 20 and the substrate 10, and the sacrificial layer 90 located outside the first groove 91 away from the resonance region is left to form the support layer 70, thereby improving the strength of the edge region 60 and reducing acoustic leakage of the thin film bulk acoustic resonator, and improving the Q value of the resonator.
Optionally, sequentially forming the bottom electrode, the piezoelectric layer, and the top electrode on the sacrificial layer includes: fig. 10 is a schematic view of a manufacturing process of a thin film bulk acoustic resonator according to a second embodiment of the present invention, and referring to fig. 10, a first electrode layer 21 is formed in a resonance region and an edge region; fig. 11 is a schematic view of a manufacturing process of a thin film bulk acoustic resonator according to a second embodiment of the present invention, and referring to fig. 10 and 11, the first electrode layer 21 located on a side of the boundary of the second recess 92 adjacent to the resonance region, which is far away from the resonance region, is removed to form the bottom electrode 20; referring to fig. 5, a piezoelectric layer 30 is formed on the surface of the bottom electrode 20; forming a second electrode layer on the surface of the piezoelectric layer 30; the second electrode layer outside the resonance region 50 is removed to form the top electrode 40.
Wherein, referring to fig. 5, 9-11, a first electrode layer 21 is deposited on the sacrificial layer 90, the first electrode layer 21 located at a side of the boundary of the second recess 92 adjacent to the resonance region 50 away from the resonance region 50 is removed by an etching process, a bottom electrode 20 is formed, a piezoelectric layer 30 is deposited on the bottom electrode 20, and a second electrode layer is deposited on the piezoelectric layer 30; the second electrode layer outside the resonance region 50 is removed by etching the pattern to form the top electrode 40.
Optionally, sequentially forming the bottom electrode, the piezoelectric layer, and the top electrode on the sacrificial layer includes: forming a bottom electrode and a piezoelectric layer in the resonance region and the edge region; forming a second electrode layer on the surface of the piezoelectric layer; and removing the second electrode layer outside the resonance region to form a top electrode.
Fig. 12 is a schematic view of a manufacturing process of a thin film bulk acoustic resonator according to a second embodiment of the present invention, and referring to fig. 12, a bottom electrode 20 is deposited on a sacrificial layer 90, a piezoelectric layer 30 is deposited on the bottom electrode 20, and a second electrode layer is deposited on the piezoelectric layer 30; the second electrode layer outside the resonance region is removed by etching the pattern to form the top electrode 40.
Optionally, fig. 13 is a schematic view of a manufacturing process of a thin film bulk acoustic resonator according to a second embodiment of the present invention, and referring to fig. 13, a sacrificial layer is disposed on a substrate 10, including: depositing a first sacrificial layer 94 on the substrate 10; etching the first sacrificial layer 94 to form a third groove 93, wherein the depth of the third groove 93 is equal to the thickness of the first sacrificial layer 94; fig. 14 is a schematic view of a manufacturing process of a thin film bulk acoustic resonator according to a second embodiment of the present invention, and referring to fig. 14, a second sacrificial layer 95 is deposited on the first sacrificial layer 94, and the second sacrificial layer 95 at the third recess 93 is removed to form a first recess 91; and simultaneously, the second sacrificial layer 95 is etched at a side of the first recess 91 adjacent to the resonance region to form a second recess 92.
Alternatively, referring to fig. 9, disposing a sacrificial layer 90 on a substrate 10 includes: depositing a sacrificial layer 90 on a substrate, and etching the sacrificial layer 90 to form a first groove 91; the sacrificial layer 90 is etched a second time at a side of the first recess 91 adjacent to the resonance region 50, forming a second recess 92.
Wherein the first sacrificial layer 94 and the second sacrificial layer 95 may be formed by two depositions, the first groove 91 and the second groove 92 may be formed by etching the first sacrificial layer 94 and the second sacrificial layer 95, respectively, or the first groove 91 and the second groove 92 may be formed by etching the sacrificial layer 90 two times, respectively, by one deposition of the sacrificial layer 90.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. The thin film bulk acoustic resonator comprises a resonance area and an edge area surrounding the resonance area, and is characterized in that the resonance area comprises a substrate, a cavity, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially stacked; the first surface of the substrate adjacent to the bottom electrode is a plane; the part outside the top electrode of the resonator is an edge area, the edge area comprises a supporting part supported on the first surface of the substrate and a suspension part positioned between the supporting part and the resonance area, and the supporting part and the suspension part both comprise piezoelectric layers;
the suspension portion further includes a first protrusion having a surface adjacent the substrate at a distance from the first surface of the substrate that is less than a distance between the surface of the other region of the suspension portion adjacent the substrate and the first surface of the substrate; and the surface of the suspension adjacent the substrate is not in contact with the first surface of the substrate.
2. The resonator according to claim 1, characterized in that:
the bottom electrode is only arranged in the resonance area;
alternatively, the edge region further comprises a bottom electrode and extends from the resonance region to an edge of the edge region away from the resonance region;
alternatively, the suspending portion further includes a bottom electrode extending to an edge of the first protruding portion adjacent to one side of the resonance region.
3. The resonator according to claim 1, characterized in that:
the edge region further comprises a second protruding portion located on one side, away from the resonance region, of the supporting portion, and a supporting layer is arranged between the second protruding portion and the substrate.
4. A resonator according to claim 2, characterized in that:
the distance between the surface of the first protruding part adjacent to the substrate and the first surface of the substrate is 1-1.5 mu m;
the distance between the surface of the floating part adjacent to the substrate and the first surface of the substrate except the first protruding part is 2-3 mu m;
the width of the first protruding portion and the width of the supporting portion are 5-10 μm along the direction that the resonance region points to the edge region.
5. The resonator according to claim 1, characterized in that:
the piezoelectric layer further includes a release hole;
the release hole is arranged on the first protruding part of the suspension part, or the release hole is arranged between the first protruding part and the supporting part;
the release hole penetrates through the piezoelectric layer and the bottom electrode along the thickness direction of the piezoelectric layer.
6. The resonator according to claim 1, characterized in that the material of the piezoelectric layer comprises at least one of a polycrystalline or monocrystalline material of AlN, alScN, liNbO and LiTaO3, and a ferroelectric monocrystalline material;
the materials of the bottom electrode and the top electrode each include at least one of molybdenum, tungsten, platinum, and gold.
7. A method of manufacturing a thin film bulk acoustic resonator, the resonator comprising a resonant region and an edge region, comprising:
providing a substrate; the first surface of the substrate is a plane;
a sacrificial layer is arranged on the first surface of the substrate, a first groove and a second groove are formed on the sacrificial layer, the first groove and the second groove are located in the edge area, the first groove is arranged on one side, away from the resonance area, of the second groove, the first groove penetrates through the sacrificial layer, and the depth of the second groove is smaller than the thickness of the sacrificial layer;
forming a bottom electrode, a piezoelectric layer and a top electrode on the sacrificial layer in sequence; the resonance region comprises a substrate, a sacrificial layer, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially stacked, the part outside the top electrode of the resonator is an edge region, the edge region comprises a supporting part supported on the first surface of the substrate and a suspension part positioned between the supporting part and the resonance region, and the supporting part and the suspension part both comprise the piezoelectric layer; the suspension portion further includes a first protrusion, a distance between a surface of the first protrusion adjacent to the substrate and the first surface of the substrate being smaller than a distance between a surface of the other region of the suspension portion adjacent to the substrate and the first surface of the substrate, the surface of the suspension portion adjacent to the substrate being not in contact with the first surface of the substrate; the supporting part is positioned in the first groove, and the first protruding part is positioned in the second groove;
and removing the sacrificial layer, and forming a cavity between the bottom electrode and the substrate in the resonator.
8. The method of claim 7, wherein sequentially forming the bottom electrode, the piezoelectric layer, and the top electrode on the sacrificial layer comprises:
forming a first electrode layer in the resonance region and the edge region;
removing the first electrode layer positioned on one side of the boundary, adjacent to the resonance region, of the second groove and away from the resonance region to form the bottom electrode;
forming a piezoelectric layer on the surface of the bottom electrode;
forming a second electrode layer on the surface of the piezoelectric layer;
and removing the second electrode layer outside the resonance region to form the top electrode.
9. The method of claim 7, wherein sequentially forming the bottom electrode, the piezoelectric layer, and the top electrode on the sacrificial layer comprises:
forming a bottom electrode and a piezoelectric layer in the resonance region and the edge region;
forming a second electrode layer on the surface of the piezoelectric layer;
and removing the second electrode layer outside the resonance region to form the top electrode.
10. The method of manufacturing according to claim 7, wherein disposing a sacrificial layer on the substrate comprises:
depositing a first sacrificial layer on the substrate;
etching the first sacrificial layer to form a third groove, wherein the depth of the third groove is equal to the thickness of the first sacrificial layer;
depositing a second sacrificial layer on the first sacrificial layer, and removing the second sacrificial layer at the third groove to form the first groove;
etching the second sacrificial layer on one side of the first groove adjacent to the resonance area to form a second groove;
alternatively, disposing a sacrificial layer on the substrate, comprising:
a sacrificial layer is deposited over the substrate,
etching the sacrificial layer to form the first groove;
and etching the sacrificial layer on one side of the first groove adjacent to the resonance area to form the second groove.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005045694A (en) * | 2003-07-25 | 2005-02-17 | Sony Corp | Thin film bulk sound resonator and its manufacturing method |
| CN112003581A (en) * | 2020-08-18 | 2020-11-27 | 武汉衍熙微器件有限公司 | Bulk acoustic wave resonator |
| CN112039468A (en) * | 2020-06-16 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Film bulk acoustic resonator and method for manufacturing the same |
| CN112564658A (en) * | 2020-12-02 | 2021-03-26 | 赛莱克斯微系统科技（北京）有限公司 | Film bulk acoustic resonator and preparation method thereof |
| CN113162568A (en) * | 2021-04-25 | 2021-07-23 | 浙江信唐智芯科技有限公司 | Film bulk acoustic resonator with passivation layer and preparation method |
| CN114257195A (en) * | 2020-09-21 | 2022-03-29 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing film bulk acoustic resonator |
| CN115250100A (en) * | 2021-04-27 | 2022-10-28 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, bulk acoustic wave resonator assembly, filter, and electronic device |
| CN115833775A (en) * | 2022-12-22 | 2023-03-21 | 见闻录(浙江)半导体有限公司 | Bulk acoustic wave resonator, related equipment and preparation method of bulk acoustic wave resonator |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3945486B2 (en) * | 2004-02-18 | 2007-07-18 | ソニー株式会社 | Thin film bulk acoustic resonator and manufacturing method thereof |
| US9520856B2 (en) * | 2009-06-24 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
| US8692631B2 (en) * | 2009-10-12 | 2014-04-08 | Hao Zhang | Bulk acoustic wave resonator and method of fabricating same |
| US11764750B2 (en) * | 2018-07-20 | 2023-09-19 | Global Communication Semiconductors, Llc | Support structure for bulk acoustic wave resonator |
| CN114553163B (en) * | 2022-04-28 | 2022-09-06 | 深圳新声半导体有限公司 | Method for manufacturing bulk acoustic wave resonator |
-
2023
- 2023-07-20 CN CN202310890269.0A patent/CN116633310B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005045694A (en) * | 2003-07-25 | 2005-02-17 | Sony Corp | Thin film bulk sound resonator and its manufacturing method |
| CN112039468A (en) * | 2020-06-16 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Film bulk acoustic resonator and method for manufacturing the same |
| CN112003581A (en) * | 2020-08-18 | 2020-11-27 | 武汉衍熙微器件有限公司 | Bulk acoustic wave resonator |
| CN114257195A (en) * | 2020-09-21 | 2022-03-29 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing film bulk acoustic resonator |
| CN112564658A (en) * | 2020-12-02 | 2021-03-26 | 赛莱克斯微系统科技（北京）有限公司 | Film bulk acoustic resonator and preparation method thereof |
| CN113162568A (en) * | 2021-04-25 | 2021-07-23 | 浙江信唐智芯科技有限公司 | Film bulk acoustic resonator with passivation layer and preparation method |
| CN115250100A (en) * | 2021-04-27 | 2022-10-28 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, bulk acoustic wave resonator assembly, filter, and electronic device |
| CN115833775A (en) * | 2022-12-22 | 2023-03-21 | 见闻录(浙江)半导体有限公司 | Bulk acoustic wave resonator, related equipment and preparation method of bulk acoustic wave resonator |
Non-Patent Citations (1)
| Title |
|---|
| Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate;Humberto Campanella;《IEEE Electron Device Letters 》;第第28-30页卷;第28-30页 * |
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