CN112564658A - Film bulk acoustic resonator and preparation method thereof - Google Patents
Film bulk acoustic resonator and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
Abstract
The invention relates to the technical field of film bulk acoustic resonators, in particular to a film bulk acoustic resonator and a preparation method thereof. The film bulk acoustic resonator is arranged on the insulating layer, so that the requirement of the device on the high-resistance characteristic of the substrate layer is lowered, the electrical insulation characteristic of the film bulk acoustic resonator is improved, and the loss of radio frequency signals is reduced; air gaps exist among the cantilever beam structure, the suspended beam structure, the high-low span beam structure and the piezoelectric layer on the second electrode, so that acoustic signals generated by the film body can be effectively reflected, and the attenuation of the acoustic signals is reduced; in addition, the invention also provides a first temperature compensation layer and a second temperature compensation layer with the pressure stress characteristic on one side of the first electrode and one side of the second electrode respectively, so as to balance the distortion of the piezoelectric film caused by the stress in the temperature difference change and carry out temperature compensation, thereby improving the frequency stability of the film bulk acoustic resonator and further improving the reliability of the film bulk acoustic resonator in different application scenes.
Description
Technical Field
The invention relates to the technical field of film bulk acoustic resonators, in particular to a film bulk acoustic resonator and a preparation method thereof.
Background
Film Bulk Acoustic Resonator (FBAR), a piezoelectric Acoustic passive device, is now being used in the communication and sensing fields. Electromagnetic wave filtering in the communication field, and transmitting and receiving electromagnetic wave signals with specific frequency; in the field of sensing measurement and control, the method is widely used for energy collection: acceleration and inertia detection, temperature detection, ultraviolet detection, and the like.
The film bulk acoustic resonator is generally fabricated on a semiconductor (e.g., silicon/silicon carbide/gallium nitride) substrate capable of industrial production, and mainly includes an acoustic wave reflection structure, a metal lower electrode, a piezoelectric film, a metal upper electrode, and lead-out electrical connection lines interconnected with the outside. The piezoelectric film is deformed by applying periodic alternating electric fields at two ends of the piezoelectric film so as to generate sound waves, and when the sound waves propagate in the longitudinal direction of the piezoelectric film, standing wave resonance is generated at a specific frequency, and at the moment, the thickness of the piezoelectric film is half of the wavelength of the sound waves in the piezoelectric film. Therefore, the piezoelectric film can show the same electrical resonance characteristics as a quartz crystal resonator, can be used for manufacturing electromagnetic wave resonators and filters, and is widely applied to the fields of communication and sensing.
The performance of the film bulk acoustic resonator determines the reliability of its application scenario (e.g., voltage class, environmental temperature difference, etc.), and the performance is mainly determined by its structural design and the characteristics of the material being fabricated.
Therefore, how to improve the reliability of the film bulk acoustic resonator in different application scenarios is a technical problem that needs to be solved at present.
Disclosure of Invention
The invention aims to provide a film bulk acoustic resonator and a preparation method thereof, so as to improve the reliability of the film bulk acoustic resonator in different application scenes.
In order to achieve the above object, the embodiments of the present invention provide the following solutions:
in a first aspect, an embodiment of the present invention provides a film bulk acoustic resonator, including: the temperature compensation device comprises a substrate layer, an insulating layer, a first temperature compensation layer, a first electrode, a piezoelectric layer, a second electrode and a second temperature compensation layer;
the substrate layer, the insulating layer, the first temperature compensation layer, the first electrode, the piezoelectric layer, the second electrode and the second temperature compensation layer are stacked along a first direction;
the second electrode comprises a plurality of side faces; at least one side surface comprises a cantilever beam structure, a suspended beam structure and a high-low span beam structure;
gaps are arranged among the cantilever beam structure, the suspended beam structure and the high-low span beam structure and the piezoelectric layer;
a sunken area sunken along a second direction is arranged on the insulating layer; wherein the second direction is anti-parallel to the first direction.
In one possible embodiment, the cantilever beam structure and the high-low span beam structure are respectively located on two sides of the piezoelectric layer; the suspended beam structure is located between the cantilever beam structure and the high-low span beam structure.
In one possible embodiment, a horizontal position of the depression region is located in an overlapping region of the piezoelectric layer and the first electrode in the third direction; wherein the third direction is perpendicular to the first direction.
In a possible embodiment, the first temperature compensation layer includes a first sub-layer and a second sub-layer stacked along the first direction;
the second temperature compensation layer comprises a third sublayer and a fourth sublayer which are stacked along the first direction;
the composition material of the first sublayer, the composition material of the second sublayer, the composition material of the third sublayer and the composition material of the fourth sublayer all comprise one or more of silicon dioxide, silicon oxynitride and silicon nitride.
In one possible embodiment, the thickness of the first temperature compensation layer ranges from 50 nm to 600 nm; the thickness of the second temperature compensation layer ranges from 50 nanometers to 500 nanometers.
In one possible embodiment, the first electrode is composed of one or more of a molybdenum metal material, a platinum metal material, a ruthenium metal material, a gold metal material, a silver metal material, and a copper metal material;
the second electrode is made of one or more of molybdenum metal material, platinum metal material, ruthenium metal material, gold metal material, silver metal material and copper metal material.
In a possible embodiment, the thickness of the first electrode and the thickness of the second electrode both range from 20 nm to 800 nm.
In one possible embodiment, the composition material of the piezoelectric layer includes an aluminum nitride material, an aluminum scandium nitride material, a zinc oxide material, a lithium niobate crystal material, or a lead zirconate titanate material.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a thin film bulk acoustic resonator as described in any one of the first aspects, where the method includes:
manufacturing an insulating layer on the substrate layer;
manufacturing a cavity on the insulating layer through an etching process;
filling a first sacrificial layer in the cavity;
manufacturing a first temperature compensation layer on the insulating layer;
arranging and patterning a first electrode on the first temperature compensation layer;
disposing and patterning a piezoelectric layer on the first electrode;
disposing a second sacrificial layer on the piezoelectric layer;
etching the second sacrificial layer into a liner structure by an etching process; the liner structure comprises a cantilever beam reverse mould structure, a suspended beam reverse mould structure and a high-low span beam reverse mould structure;
disposing and imaging a second electrode on the liner structure;
disposing a second temperature compensation layer on the second electrode;
carrying out graphical processing on the second temperature compensation layer and the second electrode through an etching process to manufacture a contact window structure and a cantilever beam structure of the second electrode;
and releasing the first sacrificial layer and the liner structure to form a cantilever beam structure, a suspended beam structure and an air gap between the high-low span beam structure and the piezoelectric layer of the second electrode.
In one possible embodiment, the releasing the first sacrificial layer and the liner structure includes:
if the composition material of the first sacrificial layer and the composition material of the liner structure are amorphous silicon materials or polycrystalline silicon materials, releasing the first sacrificial layer and the liner structure by adopting gaseous xenon fluoride;
and if the composition material of the first sacrificial layer and the composition material of the liner structure are silicon dioxide materials or phosphorus-doped silicon dioxide materials, releasing the first sacrificial layer and the liner structure by using gaseous hydrogen fluoride.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the film bulk acoustic resonator is arranged on the insulating layer, so that the requirement of the device on the high-resistance characteristic of the substrate layer is lowered, and the electrical insulation characteristic of the film bulk acoustic resonator is improved; according to the invention, air gaps exist among the cantilever beam structure, the suspended beam structure, the high-low span beam structure and the piezoelectric layer on the second electrode, so that acoustic signals generated by the film body can be effectively reflected, and the loss of radio frequency signals is reduced; in addition, the invention also provides a first temperature compensation layer and a second temperature compensation layer with the pressure stress characteristic on one side of the first electrode and one side of the second electrode respectively, so as to balance the distortion of the piezoelectric film caused by the stress in the temperature difference change and carry out temperature compensation, thereby improving the frequency stability of the film bulk acoustic resonator and further improving the reliability of the film bulk acoustic resonator in different application scenes.
Drawings
In order to more clearly illustrate the embodiments of the present specification or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present specification, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a film bulk acoustic resonator according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a film bulk acoustic resonator according to an embodiment of the present invention;
fig. 3 is a schematic process diagram of step 1 in a method for manufacturing a film bulk acoustic resonator according to an embodiment of the present invention;
fig. 4 is a schematic process diagram of step 2 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 5 is a schematic process diagram of step 3 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 6 is a schematic process diagram of step 4 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 7 is a schematic process diagram of step 5 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 8 is a schematic process diagram of step 6 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 9 is a schematic structural diagram of a thin film bulk acoustic resonator after patterning a piezoelectric layer in step 6 in a manufacturing method of the thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 10 is a schematic process diagram of step 7 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 11 is a schematic process diagram of step 8 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 12 is a schematic process diagram of step 9 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 13 is a schematic process diagram of step 10 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention;
fig. 14 is a schematic process diagram of step 11 in the method for manufacturing a film bulk acoustic resonator according to the embodiment of the present invention.
Description of reference numerals:
1 is the substrate layer, 2 is the insulating layer, 21 is the cavity, 31 is first temperature compensation layer, 32 is the second temperature compensation layer, 4 is first electrode, 5 is the piezoelectric layer, 6 is the second electrode, 61 is the cantilever beam structure, 62 is the hanging beam structure, 63 is the height structure of striding the beam, 7 is first sacrificial layer, 8 is the second sacrificial layer, 81 is the contact window structure, 82 is the hanging beam structure of falling the mould, 83 is the height structure of striding the beam structure of falling the mould, 84 is the cantilever beam structure of falling the mould.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments, and all other embodiments obtained by those skilled in the art based on the embodiments of the present invention belong to the scope of protection of the embodiments of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of the film bulk acoustic resonator, which specifically includes: substrate layer 1, insulating layer 2, first temperature compensation layer 31, first electrode 4, piezoelectric layer 5, second electrode 6 and second temperature compensation layer 32.
The substrate layer 1, the insulating layer 2, the first temperature compensation layer 31, the first electrode 4, the piezoelectric layer 5, the second electrode 6, and the second temperature compensation layer 32 are stacked in a first direction, which may be a bottom-up direction.
Specifically, the substrate layer 1 is usually a semiconductor substrate, such as a silicon substrate, a silicon carbide substrate, or a gallium nitride substrate. However, in the embodiment, the film bulk acoustic resonator structure is not directly grown on the substrate layer 1, so that the requirement of the film bulk acoustic resonator on the high resistance value of the substrate layer 1 is reduced, and the overall cost is reduced.
Specifically, the insulating layer 2 is an insulating film, and may be made of a silicon dioxide material, a silicon oxynitride material, or a silicon nitride material, or may be made of a mixture of one or more of these three materials. The preferred thickness of the insulating layer 2 may be in the range of 3 to 8 microns.
Specifically, the first electrode 4 is a lower electrode of the film bulk acoustic resonator, the second electrode 6 is an upper electrode of the film bulk acoustic resonator, and the upper electrode and the lower electrode may be made of a molybdenum metal (Mo) material, a platinum metal (Pt) material, a ruthenium metal (Ru) material, a gold metal (Au) material, a silver metal (Ag) material, or a copper metal (Cu) material, or may be made of an alloy material made of one or more of these metal materials.
Specifically, the composition material of the piezoelectric layer 5 may be an aluminum nitride (AlN) material, an aluminum scandium nitride (AlScN) material, a zinc oxide (ZnO) material, a lithium niobate crystal (LiNbO)3) Material or lead zirconate titanate (Pb (Zr)1-XTiX)O3) A piezoelectric material having piezoelectric characteristics such as a material. Of course, the piezoelectric layer 5 may be further doped with one or more of rare earth elements and transition metal elements based on the above materials, so as to change the elastic modulus of the piezoelectric layer 5 and improve the resonance characteristics of the piezoelectric layer 5. The thickness of the first electrode 4 and the thickness of the second electrode 6 both range from 20 nm to 800 nm.
Specifically, the first temperature compensation layer 31 and the second temperature compensation layer 32 may be made of silicon dioxide, silicon oxynitride, or silicon nitride, or a mixture of one or more of these three materials may also be used. The preferred thickness of the first temperature compensation layer 31 is 50 nm to 600 nm, and the preferred thickness of the second temperature compensation layer 32 is 50 nm to 500 nm, and the specific thickness selection should be preferably obtained through simulation of the thermodynamic mechanical properties of the film bulk acoustic resonator.
The first temperature compensation layer 31 includes a first sublayer and a second sublayer stacked in a first direction; the second temperature compensation layer 32 includes a third sublayer and a fourth sublayer stacked in the first direction; the composition material of the first sub-layer, the composition material of the second sub-layer, the composition material of the third sub-layer and the composition material of the fourth sub-layer comprise one or more of silicon dioxide, silicon oxynitride and silicon nitride.
Due to the different thermal expansion coefficients of the piezoelectric layer 5 and other film layers of the film bulk acoustic resonator, the film bulk acoustic resonator generates stress deformation at different temperatures, and the deformation causes the resonance frequency of the resonator to shift. The first temperature compensation layer 31 and the second temperature compensation layer 32 in this embodiment have a compressive stress characteristic, and can balance distortion of the piezoelectric film due to stress in temperature difference change, so as to inhibit deformation of the piezoelectric film under the influence of temperature, and simultaneously not affect the resonance quality characteristic of the piezoelectric film, thereby realizing temperature compensation of the piezoelectric film.
A sunken area sunken along the second direction is arranged on the insulating layer 2 to form a cavity 21 structure; the second direction is anti-parallel to the first direction, and may be a top-down direction. The recessed area can provide a vibration space for the acoustic vibration of the piezoelectric layer 5, avoiding affecting the piezoelectric performance of the piezoelectric layer 5.
The second electrode 6 comprises a plurality of side faces; wherein at least one side comprises a cantilever beam structure 61, a suspended beam structure 62 and a high-low span beam structure 63. Gaps are arranged between the cantilever beam structure 61, the suspension beam structure 62 and the high-low bridge structure 63 and the piezoelectric layer 5.
Specifically, the cantilever structure 61 includes a cantilever and a pillar, the pillar is a portion where one end of the first electrode is closely attached to the upper surface of the piezoelectric layer, and one end of the cantilever is fixedly connected to the upper end of the pillar. Thus, the upper surface of the piezoelectric layer under the cantilever is directly exposed to air.
Specifically, the suspended beam structure 62 includes a beam structure and two side pillars, the two side pillars are the adjacent portions of the middle of the first electrode that are close to the upper surface of the piezoelectric layer, and the beam structure is directly and fixedly connected to the two side pillars. Thus, the beam structure, the two side posts, and the upper surface of the piezoelectric layer form an air gap.
Specifically, the term "high-low" in the high-low span beam structure 63 means that the bottoms of the support structures on both sides of the span beam are not located on the same horizontal plane, and there is a relative height deviation. Thus, the bridge, the two-sided support structure, and the upper surface of the piezoelectric layer form an L-shaped air gap.
When sound waves enter another medium with different acoustic impedances from one medium, a reflection phenomenon and/or a transmission phenomenon occurs on an interface of the two media, the magnitude of the reflectivity and the magnitude of the transmissivity are related to the magnitude of the difference between the acoustic impedances of the two media, and the reflection angle and the transmission angle are related to the incident angle. Specifically, reflection of a high-frequency sound wave of 2 khz or more has a relationship with acoustic impedances of two media through which the sound wave propagates, and if the acoustic impedances of the two media are the same, a transmission phenomenon occurs all over, if the acoustic impedance ratio between the first medium and the second medium is 1 to 20 times, the reflection phenomenon and the transmission phenomenon occur simultaneously, and if the acoustic impedance ratio between the first medium and the second medium is 20 times or more, a total reflection phenomenon occurs.
In this embodiment, the cantilever beam structure 61, the suspended beam structure 62, and the high-low beam structure 63 are disposed on the second electrode 6, so that the piezoelectric resonance structure (the stacked structure formed by the piezoelectric layer 5 and the upper and lower electrodes) is partially exposed to air or vacuum in the up-down direction and the left-right direction, and the piezoelectric layer 5, the first electrode 4, and the second electrode 6 are all solid media, and the acoustic impedance thereof is relatively large with respect to air or vacuum, so that the sound wave generated by the vibration of the piezoelectric layer 5 is totally reflected around the piezoelectric resonance structure, thereby reducing the outward loss of the sound wave signal, and facilitating the sound wave to more accurately form mechanical resonance in the piezoelectric resonance structure.
Specifically, the cantilever beam structure 61 and the high-low bridge structure 63 are respectively located at two sides of the piezoelectric layer 5; the suspended beam structure 62 is located between the cantilever beam structure 61 and the high-low span beam structure 63. The horizontal position of the recessed region is located in the overlapping region of the piezoelectric layer 5 and the first electrode 4 in the third direction; the third direction is perpendicular to the first direction, and may be a left-to-right direction or a right-to-left direction.
The working principle of the embodiment is as follows:
when certain voltage is applied to the first electrode 4 and the second electrode 6, the piezoelectric layer 5 generates mechanical deformation due to inverse piezoelectric effect, and due to the existence of the concave area below the piezoelectric layer 5, the piezoelectric layer 5 can excite an acoustic wave vibration signal and reflect back and forth between the two electrode planes, and due to the existence of gaps between the cantilever beam structure 61, the suspended beam structure 62 and the high-low bridge structure 63 of the second electrode 6 and the piezoelectric layer 5, the acoustic wave can be totally reflected when being transmitted to the structures, so that the outward loss of the acoustic wave signal is reduced, the acoustic wave signal forms accurate mechanical resonance between the piezoelectric layer 5 and the upper and lower electrodes, and the specific fundamental frequency wavelength of the resonance is in relation with the thickness of the piezoelectric layer 5.
Based on the same inventive concept as the method, an embodiment of the present invention further provides a method for manufacturing the film bulk acoustic resonator, where as shown in fig. 2, a flowchart of the method embodiment is provided, and the method specifically includes steps 1 to 12.
Specifically, as shown in fig. 3, which is a process diagram of this step, a Chemical Vapor Deposition (PECVD) is performed on the substrate layer 1 to prepare an insulating layer 2, and then a Chemical Mechanical Polishing (CMP) is performed on the upper surface of the insulating layer 2.
And 2, manufacturing a cavity 21 on the insulating layer 2 through an etching process.
Specifically, as shown in fig. 4, which is a process diagram of this step, a cavity 21 is etched on the insulating layer 2, the bottom of the cavity 21 must be above the substrate layer 1, and the bottom of the cavity 21 must not penetrate the insulating layer 2, and the depth of the cavity 21 in the vertical direction, which is determined by the design of the specific resonator, can be set to 1 micron to 5 microns.
And step 3, filling the cavity 21 with the first sacrificial layer 7.
Specifically, as shown in fig. 5, which is a process diagram of this step, a film of the first sacrificial layer 7 is grown on the insulating layer 2, and the first sacrificial layer 7 needs to have a certain thickness, which cannot be too thin, and at least fills the cavity 21 on the insulating layer 2 and overflows, i.e. the lowest position of the upper surface of the first sacrificial layer 7 on the semiconductor substrate should be higher than the level of the opening of the cavity 21. The selection range of the preparation method of the first sacrificial layer 7 is relatively large, and various methods such as chemical Vapor Deposition (cvd) and Physical Vapor Deposition (PVD) can be selected as long as the design requirements are met. The first sacrificial layer 7 is prepared using a process of Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
Thereafter, the excess material on the upper surface of the first sacrificial layer 7 is removed by a chemical mechanical polishing process, so that the opening of the cavity 21 is exposed in the horizontal direction. The chemical mechanical polishing process requires extremely fine polishing at the opening of the cavity 21, so that the upper surface of the first sacrificial layer 7 exposed at the opening of the cavity 21 and the upper surface of the insulating layer 2 reach the highest flatness which can be reached by the process, and a flat and smooth substrate foundation is laid for the subsequent process.
And 4, manufacturing a first temperature compensation layer 31 on the insulating layer 2.
Specifically, as shown in fig. 6, which is a process diagram of this step, the deposition of the first temperature compensation layer 31 is continued, and the chemical mechanical polishing is performed. The growth process of the first temperature compensation layer 31 is preferably ion-enhanced chemical vapor deposition, and the chemical mechanical polishing after the film growth is finished requires the fine polishing reaching the highest process level to reach the highest flatness, so as to prepare for the next step of manufacturing the first electrode 4 of the resonator.
And step 5, arranging and patterning a first electrode 4 on the first temperature compensation layer 31.
Specifically, as shown in fig. 7 as a process schematic diagram of this step, the first electrode 4 is usually prepared by depositing an AlN film as a lattice matching layer or a mechanical support layer of the metal electrode by using magnetron Sputtering (Sputtering), and then depositing a metal film, such as molybdenum (Mo), platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), copper (Cu), and the like, by using magnetron Sputtering, including but not limited to one or more combinations of these metal materials. The thickness of the mechanical support layer is preferably between 20-800 nm, and the thickness of the metal electrode is preferably between 200-1200 nm. It should be noted that the mechanical support layer of the metal electrode and the metal electrode need to be prepared into a quasi-single crystal with a preferred orientation, or an approximate single crystal with a columnar texture, and the preparation of the crystalline piezoelectric layer 5 provides a strict lattice construction foundation; meanwhile, the upper surface of the first electrode 4 is subjected to planarization finishing (trimming) so that the in-chip surface waviness of the upper surface of the bottom electrode thin film (metal thin film) is at least less than 5 nanometers, even less than 1 nanometer. Such high surface uniformity requires very high flatness of the bottom layer of the film deposition, strict control of the thickness uniformity and surface flatness of the film by the preparation process of the AlN mechanical support layer and the metal bottom electrode film, and good performance of the planarization finishing process. A typical planarization finishing process employs a surface modification process using argon plasma.
And then, carrying out glue homogenizing, exposure, development and reactive plasma etching on the mechanical supporting layer and the metal bottom electrode film with good crystal characteristics and surface flatness characteristics to form a first electrode 4 pattern.
And 6, arranging and patterning a piezoelectric layer 5 on the first electrode 4.
Specifically, as shown in fig. 8, the process of this step is schematically illustrated, and the piezoelectric layer 5 may be AlN, AlScN, ZnO, LiNbO3，Pb(Zr1-XTiX)O3The piezoelectric material is used to make crystal film. The preparation of c-axis oriented AlN or scandium (Sc) -doped AlN, namely AlScN, is a core process of the film bulk acoustic resonator. Doping rare earth elements such as scandium (Sc) or yttrium (Y) improves the elasticity and resonance characteristics of the AlN piezoelectric layer 5.
It should be noted here that the piezoelectric layer 5 should be a quasi-single crystal with a preferred orientation, or an approximately single crystal with a columnar texture, or a single crystal that produces the highest level. At the same time, the upper surface of the piezoelectric layer 5 film must be planarized to achieve an in-sheet surface relief of the upper surface of the piezoelectric layer 5 film of at least less than 5 nm, and even less than 1 nm. The piezoelectric layer 5 with extremely high surface flatness provides the most critical improvement to the resonance characteristics of the film bulk acoustic resonator.
After glue spreading, exposure, development, and reactive plasma etching are performed on the piezoelectric layer 5 film with good crystal characteristics and surface flatness characteristics, a pattern of the piezoelectric layer 5 is formed, and as shown in fig. 9, the structural diagram of the piezoelectric layer 5 after patterning in this step is shown.
Specifically, as shown in fig. 10, the process of this step is schematically illustrated, the thickness of the second sacrificial layer 8 is 500-3000 nm, and most of the preparation methods are chemical vapor deposition and physical vapor deposition. Is prepared by using a low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition process.
And 8, etching the second sacrificial layer 8 into a liner structure by an etching process.
As shown in fig. 11, which is a schematic process diagram of this step, the pad structure includes a suspended beam inverse model structure 82 and a high-low span beam inverse model structure 83.
Specifically, after glue spreading, exposure, development, and reactive plasma etching are performed on the prepared second sacrificial layer 8, a pad structure is formed, and at this time, the pad structure includes a cantilever beam reverse mode structure 84, a suspended beam reverse mode structure 82, and a high-low span beam reverse mode structure 83.
A second electrode 6 is provided and patterned on the spacer structure, step 9.
Specifically, as shown in fig. 12, which is a process diagram of this step, the process of forming the second electrode 6 is similar to that of the first electrode 4, and is not repeated herein.
Step 10, a second temperature compensation layer 32 is disposed on the second electrode 6.
Specifically, as shown in fig. 13, which is a process diagram of this step, the generation and processing process of the second temperature compensation layer 32 is similar to that of the first temperature compensation layer 31, and is not repeated herein.
Step 11, performing patterning processing on the second temperature compensation layer 32 and the second electrode 6 by an etching process to manufacture the contact window structure 81 and the cantilever beam structure 61 of the second electrode 6.
Specifically, as shown in fig. 14, the process diagram of this step is combined with the processes of spin coating, exposure, development, and reactive plasma etching, and the second temperature compensation layer 32 and the metal film of the second electrode 6 are patterned to form a contact window structure 81 where the second electrode 6 on the right side of the device is interconnected with the outside, and the metal film of the first electrode 4 and the second electrode 6 on the left side of the device is separated, and the exposed head of the left end portion of the piezoelectric layer 5 on the left side of the device is formed, so as to form the cantilever structure 61 of the second electrode 6.
And step 12, releasing the first sacrificial layer 7 and the liner structure, and forming air gaps between the cantilever beam structure 61, the suspended beam structure 62 and the high-low span beam structure 63 of the second electrode 6 and the piezoelectric layer 5.
Specifically, if the composition material of the first sacrificial layer 7 and the composition material of the pad structure are amorphous silicon materials or polycrystalline silicon materials, gaseous xenon fluoride is adopted to release the first sacrificial layer 7 and the pad structure; if the constituent material of the first sacrificial layer 7 and the constituent material of the pad structure are silicon dioxide material or phosphorus-doped silicon dioxide material, gaseous hydrogen fluoride is used to release the first sacrificial layer 7 and the pad structure.
Specifically, after the growth of the second temperature compensation layer 32 is completed, the load layer (Mass Loading) and the Passivation layer (Passivation) continue to grow. The carrier layer is typically selected to be the same metallic material as the second electrode 6 and the passivation layer is typically selected to be an AlN ceramic material.
And then, performing necessary process steps to ensure that windows of the first electrode 4 and the second electrode 6, which are interconnected with the outside, are opened, and ensure that the first electrode 4 and the second electrode 6 are separated.
The technical scheme provided by the embodiment of the invention at least has the following technical effects or advantages:
according to the embodiment of the invention, the film bulk acoustic resonator is arranged on the insulating layer, so that the requirement of a device on the high-resistance characteristic of a substrate layer is lowered, and the electric insulation characteristic of the film bulk acoustic resonator is improved; according to the embodiment of the invention, air gaps exist among the cantilever beam structure, the suspended beam structure, the high-low span beam structure and the piezoelectric layer on the second electrode, so that acoustic signals generated by the film body can be effectively reflected, and the loss of radio frequency signals is reduced; in addition, in the embodiment of the invention, the first temperature compensation layer and the second temperature compensation layer with the pressure stress characteristic are respectively arranged on one side of the first electrode and one side of the second electrode to balance the distortion of the piezoelectric film caused by the stress in the temperature difference change and carry out temperature compensation, so that the frequency stability of the film bulk acoustic resonator is improved, and the reliability of the film bulk acoustic resonator in different application scenes is improved.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A thin film bulk acoustic resonator, comprising: the temperature compensation device comprises a substrate layer, an insulating layer, a first temperature compensation layer, a first electrode, a piezoelectric layer, a second electrode and a second temperature compensation layer;
the substrate layer, the insulating layer, the first temperature compensation layer, the first electrode, the piezoelectric layer, the second electrode and the second temperature compensation layer are stacked along a first direction;
the second electrode comprises a plurality of side faces; at least one side surface comprises a cantilever beam structure, a suspended beam structure and a high-low span beam structure;
gaps are arranged among the cantilever beam structure, the suspended beam structure and the high-low span beam structure and the piezoelectric layer;
a sunken area sunken along a second direction is arranged on the insulating layer; wherein the second direction is anti-parallel to the first direction.
2. The film bulk acoustic resonator of claim 1, wherein the cantilever beam structure and the high-low span beam structure are respectively located on both sides of the piezoelectric layer; the suspended beam structure is located between the cantilever beam structure and the high-low span beam structure.
3. The thin film bulk acoustic resonator according to claim 1, wherein a horizontal position of the depression region is located in an overlapping region of the piezoelectric layer and the first electrode in a third direction; wherein the third direction is perpendicular to the first direction.
4. The film bulk acoustic resonator of claim 1, wherein the first temperature compensation layer comprises a first sublayer and a second sublayer disposed one on top of the other in the first direction;
the second temperature compensation layer comprises a third sublayer and a fourth sublayer which are stacked along the first direction;
the composition material of the first sublayer, the composition material of the second sublayer, the composition material of the third sublayer and the composition material of the fourth sublayer all comprise one or more of silicon dioxide, silicon oxynitride and silicon nitride.
5. The film bulk acoustic resonator according to claim 4, wherein the thickness of the first temperature compensation layer ranges from 50 nm to 600 nm; the thickness of the second temperature compensation layer ranges from 50 nanometers to 500 nanometers.
6. The thin film bulk acoustic resonator of claim 1, wherein constituent materials of the first electrode include one or more of a molybdenum metal material, a platinum metal material, a ruthenium metal material, a gold metal material, a silver metal material, and a copper metal material;
the second electrode is made of one or more of molybdenum metal material, platinum metal material, ruthenium metal material, gold metal material, silver metal material and copper metal material.
7. The film bulk acoustic resonator according to claim 6, wherein the thickness of the first electrode and the thickness of the second electrode both range from 20 nm to 800 nm.
8. The thin film bulk acoustic resonator of claim 1, wherein the piezoelectric layer is composed of an aluminum nitride material, an aluminum scandium nitride material, a zinc oxide material, a lithium niobate crystal material, or a lead zirconate titanate material.
9. A method for manufacturing a thin film bulk acoustic resonator according to any one of claims 1 to 8, comprising:
manufacturing an insulating layer on the substrate layer;
manufacturing a cavity on the insulating layer through an etching process;
filling a first sacrificial layer in the cavity;
manufacturing a first temperature compensation layer on the insulating layer;
arranging and patterning a first electrode on the first temperature compensation layer;
disposing and patterning a piezoelectric layer on the first electrode;
disposing a second sacrificial layer on the piezoelectric layer;
etching the second sacrificial layer into a liner structure by an etching process; the liner structure comprises a cantilever beam reverse mould structure, a suspended beam reverse mould structure and a high-low span beam reverse mould structure;
disposing and imaging a second electrode on the liner structure;
disposing a second temperature compensation layer on the second electrode;
carrying out graphical processing on the second temperature compensation layer and the second electrode through an etching process to manufacture a contact window structure and a cantilever beam structure of the second electrode;
and releasing the first sacrificial layer and the liner structure to form a cantilever beam structure, a suspended beam structure and an air gap between the high-low span beam structure and the piezoelectric layer of the second electrode.
10. The method of manufacturing a thin film bulk acoustic resonator according to claim 9, wherein the releasing the first sacrificial layer and the pad structure includes:
if the composition material of the first sacrificial layer and the composition material of the liner structure are amorphous silicon materials or polycrystalline silicon materials, releasing the first sacrificial layer and the liner structure by adopting gaseous xenon fluoride;
and if the composition material of the first sacrificial layer and the composition material of the liner structure are silicon dioxide materials or phosphorus-doped silicon dioxide materials, releasing the first sacrificial layer and the liner structure by using gaseous hydrogen fluoride.
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