CN110460320A - Film layer structure, its manufacturing method and the filter including the film layer structure - Google Patents
Film layer structure, its manufacturing method and the filter including the film layer structure Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 55
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000003780 insertion Methods 0.000 claims abstract description 8
- 230000037431 insertion Effects 0.000 claims abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 42
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 229910052786 argon Inorganic materials 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910017083 AlN Inorganic materials 0.000 claims description 11
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 5
- 230000026267 regulation of growth Effects 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- -1 is 500~3000w Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
Abstract
The invention belongs to thin-film bulk acoustic wave filter technology field, a kind of film layer structure, its manufacturing method and the filter including the film layer structure are specifically proposed；The film layer structure includes substrate, and a cavity is offered at the top of substrate, and compound top electrode and compound lower electrode are prepared with above substrate, is provided with piezoelectric layer between compound upper and lower electrode；The compound top electrode includes the top electrode being arranged from top to bottom, the first temperature compensating layer and top electrode insert layer；The compound lower electrode includes lower electrode insert layer, second temperature compensation layer and the lower electrode being arranged from top to bottom.The film layer structure proposed through the invention, be conducive to the growth of piezoelectric membrane C axle preferrel orientation, favorable orientation, the complete piezoelectric membrane of grain growth are obtained, additionally be able to guarantee that there is lower insertion loss using the filter of the film layer structure and bandwidth is kept to stablize.
Description
Technical field
The present invention relates to a kind of high-temperature stability thin-film bulk acoustic wave filter (TC-FBAR) film layer structure and techniques；Belong to
In thin-film bulk acoustic wave filter technology field.
Background technique
With military electronic complete machine armament-related work frequency, the continuous improvement of sensitivity and integrated level, phased-array radar, electronics
Confrontation and communication system propose urgent need to the filter of frequency-temperature coefficient, high-performance, small size.Film bulk acoustic filter
Wave device, for being isolated to radiofrequency signal, being gated, limits radiation letter of the transmitter in its working band in radio-frequency front-end
Number, while preventing to receive the interference of noise signal, it is the Primary Component in radio frequency system, plays in the contention of electromagnetism processed power
Vital effect.Traditional films bulk accoustic wave filter frequency-temperature coefficient is at -30ppm/ DEG C or so at present, due to filter
With frequency-temperature coefficient, in the design of filter, need to consider that performance indicator is qualified within the scope of the full temperature of device work, institute
It is both greater than index bandwidth with the bandwidth for the filter made, frequency-temperature coefficient is bigger, and filter bandwidht need to be made to get over
Width, the difficulty of design and processes can all increase.
But for certain narrowband use occasions, the protection bandwidth of system will be made to increase, filter is reduced to proximal end
Inhibition outside band causes the interference signal into receiver to increase, and influences machine-noise ratio and equipment sensitivity.Can generally it pass through
Increase the thin-film bulk acoustic wave filter that temperature compensation layer prepares high-temperature stability, frequency-temperature coefficient is controlled in lesser model
It encloses, frequency resource utilization rate can be increased, improve proximal band outside inhibitory energy.
Currently, certain university scholar reaches temperature-compensating (referred to as using the capacitor of film bulk acoustic series connection cantilever beam structure
Temperature compensation) effect.The electrode of cantilever beam capacitor is made of thermal expansion coefficient two kinds of material films of different Al and SiNx, due to temperature
Degree variation, two kinds of material heat expansions are inconsistent, allow for cantilever beam run-off the straight, are connected on film bulk acoustic resonator to change
The size of capacitance on device has the function that improve frequency-temperature coefficient.But operability is not in practical applications for such mode
By force.2008, Brice Ivira was by increasing SiO on piezoelectric response heap2Realize temperature-compensating, but SiO2With piezoresistive material
Expect that lattice mismatches, stress is not easily controlled, and the preferred orientation that will lead to piezoelectric material is deteriorated, and influences the insertion damage of filter
Consumption.Qiang Zhou et al. proposition is embedded to SiO in the electrodes2The mode of film, SiO required for allowing temperature compensation effect good2Thickness
With regard to thicker, then it is severe to will lead to effective electro-mechanical couple factor decline again.
Summary of the invention
In view of the deficiencies of the prior art, the present invention intends to provide a kind of thin-film bulk acoustic wave filter high-temperature
The film layer structure and process of stability, the present invention is using the insertion temperature compensation layer SiO between upper/lower electrode respectively2, can make thin
Loss and bandwidth variation are all smaller afterwards increasing temperature compensating layer (abbreviation temperature compensation layer) for membrane body acoustic wave filter.
To achieve the goals above, the technical solution adopted by the present invention includes the following:
A kind of film layer structure, the film layer structure include substrate, a cavity are offered at the top of substrate, in the upper of substrate
Side is prepared with compound top electrode and compound lower electrode, is provided with piezoelectric layer between compound upper and lower electrode；The compound top electrode
Including the top electrode, the first temperature compensating layer and top electrode insert layer being arranged from top to bottom；The compound lower electrode include from
Up to lower electrode insert layer, second temperature compensation layer and the lower electrode of lower setting.
Further, the piezoelectric layer is aluminium nitride AlN film, with a thickness of 600~1000nm.
Further, the top electrode with a thickness of 100~350nm, the lower electrode with a thickness of 100~350nm.
Further, the top electrode insert layer with a thickness of 100~350nm, the lower electrode insert layer with a thickness of
100~350nm.
Further, first temperature compensating layer and second temperature compensation layer are SiO2Temperature compensating layer；Described
One temperature compensating layer with a thickness of 100~300nm, the second temperature compensation layer with a thickness of 100~300nm.
The invention also provides a kind of high-temperature stability thin-film bulk acoustic wave filters, including such as above-mentioned any film layer knot
Structure further includes seed layer and pad electrode.
In addition, the invention also provides a kind of manufacturing method of film layer structure, the manufacturing method the following steps are included:
1) cavity is prepared on substrate, and lower electrode is prepared by way of magnetron sputtering plating, passes through photoetching and quarter
Erosion, obtains required lower electrode pattern；
2) by one temperature compensating layer of high density plasma CVD (HDPCVD) growth regulation, by photoetching and
Etch the first required temperature-compensating layer pattern；
3) electrode insert layer under being prepared by way of magnetron sputtering plating in the first temperature compensating layer, by photoetching and
Etching, compound lower electrode pattern required for obtaining；
4) piezoelectric layer is prepared by AC magnetic controlled sputter coating mode on compound lower electrode pattern；
5) top electrode insert layer is prepared by way of magnetron sputtering plating over the piezoelectric layer, by lithography and etching, is obtained
Layer pattern is inserted into required top electrode；
6) pass through high density plasma CVD (HDPCVD) growth regulation two on top electrode insertion layer pattern
Temperature compensating layer goes out required second temperature by lithography and etching and compensates layer pattern；
7) top electrode is prepared by way of magnetron sputtering plating on second temperature compensation layer, by lithography and etching,
Compound top electrode figure required for obtaining.
Further, preparing top electrode or the condition of lower electrode includes the In by way of magnetically controlled DC sputtering plated film
Under conditions of sputtering power is 500~3000w, 15~35sccm of argon flow and the back side 10~20sccm of argon flow, into
Row preparation.
Further, prepare the first temperature compensating layer or second temperature compensation layer condition include by high density etc. from
Daughter chemical vapor deposition (HDPCVD) is in N2Flow is 1000~3000sccm, SiH4Flow is 10~30sccm, N2O flow
Under conditions of being 500~2000sccm for 1000~3000sccm, Ar flow, silica SiO is produced2Temperature compensating layer.
Further, the condition for preparing piezoelectric layer includes on compound lower electrode pattern by AC magnetic controlled sputter coating side
Formula is prepared under the conditions of sputtering power is 3000~6500w, argon flow is 4~12sccm, nitrogen flow is 10~30sccm
The aluminium nitride AlN film of piezoelectric layer.
Further, the condition for preparing top electrode insert layer or lower electrode insert layer includes passing through magnetically controlled DC sputtering plated film
Mode, sputtering power be 500~3000w, 15~35sccm of argon flow, the back side 10~20sccm of argon flow condition
Under prepared.
Beneficial effects of the present invention:
(1) present invention uses the film layer structure of compound upper and lower electrode, and piezoelectric layer is deposited on lower electrode insert layer, under
Electrode insert layer is equivalent to the substrate of piezoelectric layer growth, since the Lattice Matching between lower electrode insert layer and piezoelectric layer is preferable,
Be conducive to the growth of piezoelectric membrane C axis (002 direction) preferred orientation, obtain favorable orientation, the complete piezoelectric membrane of grain growth.It keeps away
Exempt from piezoelectric layer to be grown directly upon on silica membrane, since the roughness of silica membrane is larger, is unfavorable for upper lamination
The orientation of the growth of electric layer film, especially piezoelectric membrane.
(2) thin-film bulk acoustic wave filter of high-temperature stability of the invention, frequency-temperature coefficient is largely
Depending on temperature compensation layer SiO2Film acts on the temperature compensation of piezoelectric layer, if it is desired to obtain higher temperature stability, it is necessary to increase
Temperature compensation SiO2Film thickness, blocked up SiO2Film will lead to device insertion loss increase, influence device performance.The present invention uses
Double compound electrode structure improves device temperature stability by way of being inserted into temperature compensating layer in conventional upper/lower electrode, can
Influence of the temperature compensation layer to device insertion loss and bandwidth is reduced, while reducing technology difficulty.
(3) by the film layer structure of combination electrode, reduce the thickness of top electrode or lower electrode temperature compensation layer, reduce because
Influence of the introducing of temperature compensation layer to electromechanical coupling factor reduces the influence to thin-film bulk acoustic wave filter performance.
Detailed description of the invention
Fig. 1 is film layer structure schematic diagram of the invention；
Fig. 2 is the structure chart of high-temperature stability thin-film bulk acoustic wave filter of the invention；
Fig. 3 is the flow chart of film layer structure making process of the present invention；
In figure, 1, substrate, 2, cavity, 3, compound lower electrode, 30, second temperature compensation layer, 31, lower electrode, 32, lower electrode
Insert layer, 4, piezoelectric layer, 5, compound lower electrode, the 50, first temperature compensating layer, 51, top electrode insert layer, 52, top electrode, 6, kind
Sublayer, 7, pad electrode.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to of the invention real
The technical solution applied in example is clearly and completely described, it is clear that described embodiment is only that present invention a part is implemented
Example, instead of all the embodiments.
As shown in Figure 1, a kind of film layer structure of the invention, which includes substrate 1, is opened up at the top of substrate 1
There is a cavity 2, is prepared with compound top electrode 5 and compound lower electrode 3 in the top of substrate 1, is set between compound upper and lower electrode
Be equipped with piezoelectric layer 4, the compound top electrode 5 include the top electrode 52 being arranged under upper, the first temperature compensating layer 50 and on
Electrode insert layer 51；The compound lower electrode includes the lower electrode insert layer 32 being arranged from top to bottom, second temperature compensation layer 30
And lower electrode 31.
In one embodiment, the piezoelectric layer is aluminium nitride film, with a thickness of 600~1000nm；Its preferred 650nm
And 800nm.
In one embodiment, the consistency of thickness of the top electrode and the lower electrode, is 100~350nm；It is preferred that
300nm。
In another embodiment, the thickness of the top electrode is slightly less than the thickness of the lower electrode.
Preferably, first temperature compensating layer and second temperature compensation layer are SiO2Temperature compensating layer；Described first
Temperature compensating layer with a thickness of 100~300nm, the second temperature compensation layer with a thickness of 100~300nm；It both can be excellent
It is selected as 280nm.
The invention also provides a kind of high-temperature stability thin-film bulk acoustic wave filter, which includes that the present invention proposes
Any film layer structure, which further includes seed layer 6 and pad electrode 7, is attached by pads wire, to manufacture
The filter out.
Embodiment as one preferred, as shown in Fig. 2, the filter further includes between compound lower electrode 3 and substrate 1
Seed layer 6 plays support；In the present embodiment, upper surface is the upper surface of lower electrode insert layer 32 on the left of compound lower electrode
It directly is welded with pad electrode 7, upper surface, that is, top electrode is welded with pad electrode 7 on the right side of compound top electrode.
In one embodiment, top electrode, the first temperature compensating layer, the width of top electrode insert layer are consistent.
In another embodiment, top electrode, the first temperature compensating layer, the width of top electrode insert layer are inconsistent, at this point,
The width of first temperature compensating layer is most short, so that it is powered on pole and top electrode insert layer wraps.
In one embodiment, lower electrode, second temperature compensation layer, the width of lower electrode insert layer are consistent.
Electrode, second temperature compensation layer, the width of lower electrode insert layer are inconsistent in another embodiment the lower, at this point,
The width of second temperature compensation layer is most short, so that it is wrapped by lower electrode and lower electrode insert layer.
It is understood that according to different performances, top electrode (lower electrode) in the present invention, the first temperature compensating layer (the
Two temperature compensating layers), top electrode insert layer (lower electrode insert layer) its width and height can be with appropriate adjustment；In addition, for side
Just manufacture and performance are more preferable, and the side of part layer is that slope surface is best.
As shown in figure 3, present invention is alternatively directed to film layer structures to propose the manufacturing method of the film layer structure, the manufacturing method packet
Include following steps:
1) cavity is prepared on substrate, and lower electrode is prepared by way of magnetron sputtering plating, passes through photoetching and quarter
Erosion, obtains required lower electrode pattern；
2) by one temperature compensating layer of high density plasma CVD HDPCVD growth regulation, pass through photoetching and quarter
Lose the first required out temperature-compensating layer pattern；
3) electrode insert layer under being prepared by way of magnetron sputtering plating in the first temperature compensating layer, by photoetching and
Etching, compound lower electrode pattern required for obtaining；
4) piezoelectric layer is prepared by AC magnetic controlled sputter coating mode on compound lower electrode pattern；
5) top electrode insert layer is prepared by way of magnetron sputtering plating over the piezoelectric layer, by lithography and etching, is obtained
Layer pattern is inserted into required top electrode；
6) pass through two temperature of high density plasma CVD HDPCVD growth regulation on top electrode insertion layer pattern
Compensation layer is spent, required second temperature is gone out by lithography and etching and compensates layer pattern；
7) top electrode is prepared by way of magnetron sputtering plating on temperature compensation layer, by lithography and etching, needed for obtaining
The compound top electrode figure wanted.
In one embodiment, preparation top electrode or the condition of lower electrode include the side by magnetically controlled DC sputtering plated film
Formula, in the condition that sputtering power is 500~3000w, 15~35sccm of argon flow and the back side 10~20sccm of argon flow
Under, it is prepared.
In the present embodiment, use that sputtering power is 20sccm for 1000W, argon flow and back side argon flow is
15sccm。
In one embodiment, preparing the first temperature compensating layer or the condition of second temperature compensation layer includes by highly dense
Plasma activated chemical vapour deposition HDPCVD is spent in nitrogen N2Flow is 1000~3000sccm, SiH4Flow be 10~30sccm,
N2Under conditions of O flow is 1000~3000sccm, Ar flow is 500~2000sccm, silica SiO is produced2Temperature is mended
Repay layer.
In the present embodiment, using nitrogen N2Flow is 2000sccm, SiH4Flow is 20sccm, N2O flow is
2000sccm, Ar flow are 1000sccm.
In one embodiment, the condition for preparing piezoelectric layer includes on compound lower electrode pattern by AC magnetic controlled sputtering
Plated film mode, sputtering power is 3000~6500w, argon flow is 4~12sccm, nitrogen flow is 10~30sccm condition
The lower aluminium nitride AlN film for preparing piezoelectric layer.
In the present embodiment, use sputtering power for 5000w, argon flow 10sccm, nitrogen flow 25sccm.
In one embodiment, preparing top electrode insert layer or the condition of lower electrode insert layer includes being splashed by direct magnetic control
The mode for penetrating plated film is 500~3000w, 15~35sccm of argon flow, the back side 10~20sccm of argon flow in sputtering power
Under conditions of prepared.
In the present embodiment, use sputtering power for 1000w, argon flow 20sccm, back side argon flow 15sccm.
The present invention can substantially reduce the frequency-temperature coefficient of thin-film bulk acoustic wave filter, dropped to from -30ppm/ DEG C -
10ppm/ DEG C~+10ppm/ DEG C.So that frequency-temperature coefficient greatly reduces, in filter design, the present invention can ignore
Because of frequency drift caused by the variation of temperature.For broadband filter, bandwidth required for itself is just
Wider, after the influence for eliminating frequency-temperature coefficient, the difficulty designed in complete warm range can be substantially reduced, and can be improved frequency
Rate resource utilization and filter to proximal band outside inhibition, reduce the interference signal for entering receiver, improve machine-noise ratio
With equipment sensitivity.
Those of ordinary skill in the art will appreciate that all or part of the steps in the various methods of above-described embodiment is can
It is completed with instructing relevant hardware by program, which can be stored in a computer readable storage medium, storage
Medium may include: ROM, RAM, disk or CD etc..
Embodiment provided above has carried out further detailed description, institute to the object, technical solutions and advantages of the present invention
It should be understood that embodiment provided above is only the preferred embodiment of the present invention, be not intended to limit the invention, it is all
Any modification, equivalent substitution, improvement and etc. made for the present invention, should be included in the present invention within the spirit and principles in the present invention
Protection scope within.
Claims (10)
1. a kind of film layer structure, the film layer structure includes substrate, and a cavity is offered at the top of substrate, which is characterized in that
It is prepared with compound top electrode and compound lower electrode above substrate, is provided with piezoelectric layer between compound upper and lower electrode；It is described
Compound top electrode includes the top electrode being arranged from top to bottom, the first temperature compensating layer and top electrode insert layer；It is described it is compound under
Electrode includes lower electrode insert layer, second temperature compensation layer and the lower electrode being arranged from top to bottom.
2. film layer structure according to claim 1, which is characterized in that the piezoelectric layer is aluminium nitride AlN film, thickness
For 600~1000nm；The top electrode with a thickness of 100~350nm, the lower electrode with a thickness of 100~350nm.
3. film layer structure according to claim 1, which is characterized in that the top electrode insert layer with a thickness of 100~
350nm, the lower electrode insert layer with a thickness of 100~350nm.
4. film layer structure according to claim 1, which is characterized in that first temperature compensating layer and second temperature compensation
Layer is SiO2Temperature compensating layer；First temperature compensating layer with a thickness of 100~300nm, the second temperature compensation layer
With a thickness of 100~300nm.
5. a kind of high-temperature stability thin-film bulk acoustic wave filter, including the film layer knot as described in above-mentioned Claims 1 to 4 is any
Structure further includes seed layer and pad electrode.
6. a kind of manufacturing method of film layer structure, which is characterized in that the manufacturing method the following steps are included:
1) cavity is prepared on substrate, lower electrode is prepared by way of magnetron sputtering plating, by lithography and etching, is obtained
To required lower electrode pattern；
2) by one temperature compensating layer of high density plasma CVD HDPCVD growth regulation, gone out by lithography and etching
The first required temperature-compensating layer pattern；
3) electrode insert layer, passes through photoetching and quarter under being prepared by way of magnetron sputtering plating in the first temperature compensating layer
Erosion, compound lower electrode pattern required for obtaining；
4) piezoelectric layer is prepared by AC magnetic controlled sputter coating mode on compound lower electrode pattern；
5) top electrode insert layer is prepared by way of magnetron sputtering plating over the piezoelectric layer, by lithography and etching, obtains institute
The top electrode needed is inserted into layer pattern；
6) second temperature is grown by high density plasma CVD HDPCVD on top electrode insertion layer pattern to mend
Layer is repaid, required second temperature is gone out by lithography and etching and compensates layer pattern；
7) top electrode is prepared by way of magnetron sputtering plating on second temperature compensation layer pattern, by lithography and etching,
Compound top electrode figure required for obtaining.
7. according to a kind of manufacturing method of film layer structure of claim 6, which is characterized in that the condition of preparation top electrode or lower electrode
Include by way of magnetically controlled DC sputtering plated film, sputtering power be 500~3000w, 15~35sccm of argon flow with
And it is prepared under conditions of the 10~20sccm of argon flow of the back side.
8. according to a kind of manufacturing method of film layer structure of claim 6, which is characterized in that preparation the first temperature compensating layer or second
The condition of temperature compensating layer includes by high density plasma CVD HDPCVD in nitrogen N2Flow is 1000
~3000sccm, SiH4Flow is 10~30sccm, N2O flow is 1000~3000sccm, argon flow be 500~
Under conditions of 2000sccm, silica SiO is grown2Temperature compensating layer.
9. according to a kind of manufacturing method of film layer structure of claim 6, which is characterized in that the condition for preparing piezoelectric layer is included in again
Close on lower electrode pattern through AC magnetic controlled sputter coating mode, sputtering power be 3000~6500w, argon flow be 4~
12sccm, nitrogen flow prepare the aluminium nitride AlN film of piezoelectric layer under the conditions of being 10~30sccm.
10. according to a kind of manufacturing method of film layer structure of claim 6, which is characterized in that preparation top electrode insert layer or lower electricity
The condition of pole insert layer includes by way of magnetically controlled DC sputtering plated film, is 500~3000w, argon flow in sputtering power
It is prepared under conditions of 15~35sccm, the back side 10~20sccm of argon flow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910720371.XA CN110460320A (en) | 2019-08-06 | 2019-08-06 | Film layer structure, its manufacturing method and the filter including the film layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910720371.XA CN110460320A (en) | 2019-08-06 | 2019-08-06 | Film layer structure, its manufacturing method and the filter including the film layer structure |
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| CN111010130A (en) * | 2019-12-19 | 2020-04-14 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with temperature compensation layer and electrical layer, filter and electronic equipment |
| CN111245394A (en) * | 2019-12-16 | 2020-06-05 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrode having void layer and temperature compensation layer, filter, and electronic device |
| CN111277240A (en) * | 2020-03-07 | 2020-06-12 | 中国电子科技集团公司第二十六研究所 | Film layer structure of film bulk acoustic wave filter and preparation method thereof |
| CN111490748A (en) * | 2020-02-28 | 2020-08-04 | 武汉大学 | Film bulk acoustic resonator |
| CN112134540A (en) * | 2020-09-17 | 2020-12-25 | 武汉大学 | Bulk acoustic wave resonator with composite electrode and preparation method thereof |
| CN112803915A (en) * | 2021-01-07 | 2021-05-14 | 中国电子科技集团公司第二十六研究所 | Temperature compensation type thin film filter and film layer preparation method |
| CN112865743A (en) * | 2021-01-07 | 2021-05-28 | 中国电子科技集团公司第二十六研究所 | Film structure of low-temperature drift film bulk acoustic wave filter and preparation method thereof |
| WO2021109444A1 (en) * | 2019-12-04 | 2021-06-10 | 诺思(天津)微系统有限责任公司 | Bulk acoustic resonator, fabrication method therefor, filter and electronic device |
| CN113328724A (en) * | 2021-07-22 | 2021-08-31 | 绍兴汉天下微电子有限公司 | Bulk acoustic wave resonator and manufacturing method thereof |
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| CN112865743A (en) * | 2021-01-07 | 2021-05-28 | 中国电子科技集团公司第二十六研究所 | Film structure of low-temperature drift film bulk acoustic wave filter and preparation method thereof |
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Application publication date: 20191115 |