CN207939485U - A kind of adjustable thin film bulk acoustic wave resonator of frequency - Google Patents
A kind of adjustable thin film bulk acoustic wave resonator of frequency Download PDFInfo
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- CN207939485U CN207939485U CN201820800237.1U CN201820800237U CN207939485U CN 207939485 U CN207939485 U CN 207939485U CN 201820800237 U CN201820800237 U CN 201820800237U CN 207939485 U CN207939485 U CN 207939485U
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- temperature
- acoustic wave
- thin film
- bulk acoustic
- frequency
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Abstract
The utility model discloses a kind of adjustable novel thin film bulk acoustic wave resonators of frequency, include successively substrate, temperature compensating layer, regulating course, separation layer and piezoelectricity stack layers, the piezoelectricity stack layers include lower electrode, piezoelectric membrane, top electrode.Temperature-compensating layer material has positive temperature coefficient, it can effectively reduce since temperature frequency caused by negative temperature coefficient piezoelectric membrane drifts about, improve the stability of thin film bulk acoustic wave resonator, temperature-compensating layer material need to have lower thermal conductivity characteristic simultaneously, completely cut off temperature with this, so that the heat that heat source transmits is concentrated mainly in piezoelectricity stack layers, improves the heating efficiency of piezoelectricity stack layers；Regulating course uses metal material, external heat source to heat regulating course, make piezoelectricity stack layers temperature change, then Young's modulus changes, and frequency can also change, accordingly principle, adjusts temperature, realizes the adjusting of thin film bulk acoustic wave resonator frequency；Separation layer can also realize that sound wave limits for separating regulating course and piezoelectricity stack layers, support film bulk acoustic wave resonator agent structure.
Description
Technical field
The utility model is related to a kind of acoustic resonator, more particularly to a kind of adjustable thin film bulk acoustic wave resonator of frequency.
Background technology
Thin film bulk acoustic wave resonator (Film Bulk Acoustic Resonator, FBAR) is a kind of novel sound wave resonance
Device, nuclear structure be upper layer and lower layer metal and piezoelectric membrane sandwich structure, principle be using piezoelectrics electric energy with
Mechanical energy is converted, the sound wave resonance by alternation field excitation ing, with that small, working frequency is high, low in energy consumption, insertion loss is small etc. is excellent
Point.Currently, FBAR has been widely used in wireless communication field, in its numerous research direction, resonance frequency tunings characteristic
Research is constantly subjected to extensive concern, while its huge commercial value makes FBAR frequency modulation technologies also receive the pass of business circles
Note.
The frequency modulation technology of existing FBAR, mainly have external LC elements tunes technology, the tunable technology based on ferroelectric material,
Thermal drivers tunable technology and MEMS tunable technologies etc..External LC elements tunes technology is gone here and there with FBAR by external LC networks
Parallel connection adjusts the resonant frequency of FBAR, but this technology can seriously reduce the Q values of FBAR and system is made to become complicated.Central China
University of Science and Technology proposes to constitute multilayer hetero-structure using bst thin film, BZT films or BZN films in patent CN102946236B,
As piezoelectric layer, principle is to realize the adjustable spy of frequency the characteristics of variation with extra electric field using the dielectric constant of ferroelectric material
Property, but the film preparations such as BST are difficult, it is of high cost, and Q values are relatively low, there is prodigious difficulty in actual use.Thermal drivers
Tunable technology works as temperature by increasing resistive heater heats FBAR because the piezoelectric membrane temperature coefficient of some materials is bigger
When degree changes greatly, resonant frequency can be made to change.But the FBAR device sizes of this technology are big, required driving current is big and work
Make unstable.MEMS tunable technologies introduce MEMS capacitances, variable capacitance size are adjusted by voltage, to realize frequency tune
Section, but this technology can make device architecture complicated, it is also more difficult to apply in practical situations.
The frequency modulation technology of these existing FBAR all Shortcomings, can not meet that tuning range is big, at low cost, Q values simultaneously
High condition.Therefore a kind of Frequency Adjustable thin film bulk acoustic wave resonator small, simple for process, Q values are high is needed.
Invention content
In order to overcome the disadvantages mentioned above and deficiency of the prior art, the purpose of this utility model is to provide a kind of frequency is adjustable
Thin film bulk acoustic wave resonator.
The technical solution of the utility model is as follows：
A kind of adjustable thin film bulk acoustic wave resonator of frequency, the resonator include substrate, temperature benefit successively from bottom to up
Layer, regulating course, separation layer and piezoelectricity stack layers are repaid, the piezoelectricity stack layers include lower electrode, piezoelectric membrane and top electrode, the piezoelectricity
Film is arranged on separation layer, and the left end of the bottom surface of piezoelectric membrane opens up a groove from outside to inside, and groove is not through entire pressure
Conductive film, groove are used for the placement of lower electrode, the end face of the right end and piezoelectric membrane of lower electrode, and the top electrode setting exists
The surface of piezoelectric membrane, the left end of top electrode and the end face of piezoelectric membrane, the right end of the upper surface of the piezoelectric membrane from
A through-hole is opened up under, via bottoms extend to the upper surface of lower electrode, and the right end of top electrode is not up to the aperture of through-hole.
The material of above-mentioned temperature compensating layer is SiO2, thickness is 1 μm -3 μm.
The material of above-mentioned regulating course is metal, changes adjusting of the temperature into line frequency by external heat source.
The material of above-mentioned separation layer is polyimides, and thickness is between 4 μm -10 μm.
Above-mentioned lower electrode and the material of top electrode are metal material.
The material of above-mentioned piezoelectric membrane is one kind in ZnO, AlN, composite material.
The temperature-compensating layer material of the utility model has positive temperature coefficient, can effectively reduce due to negative temperature coefficient pressure
Temperature-frequency caused by conductive film drifts about, and improves the stability of thin film bulk acoustic wave resonator, while temperature-compensating layer material needs to have
There is lower thermal conductivity characteristic, temperature is completely cut off with this, the heat that heat source transmits is made to be concentrated mainly in piezoelectricity stack layers, improves piezoelectricity stack layers
Heating efficiency；Regulating course uses metal material, external heat source to heat regulating course, make piezoelectricity stack layers temperature change, then Young mould
Amount changes, and frequency can also change, accordingly principle, adjusts temperature, realizes the adjusting of thin film bulk acoustic wave resonator frequency.This reality
With the adjustable novel thin film bulk acoustic wave resonator of the improved frequency of novel proposition, have frequency adjustable, stable structure, manufacture craft
The advantages that simple.
Compared with prior art, the utility model has the advantage of：The novel thin film bulk acoustic wave resonator, frequency can
It adjusts, and processing step is simple and reliable.The temperature-compensating layer material has positive temperature coefficient, can effectively reduce due to negative temperature
Temperature-frequency caused by coefficient piezoelectric membrane drifts about, and improves the stability of thin film bulk acoustic wave resonator, while temperature compensating layer material
Material need to have lower thermal conductivity characteristic, completely cut off temperature with this, and the heat that heat source transmits is made to be concentrated mainly in piezoelectricity stack layers, improve pressure
The heating efficiency of pile layer；Regulating course uses metal material, external heat source to heat regulating course, make piezoelectricity stack layers temperature change, then
Young's modulus changes, and frequency can also change, accordingly principle, adjusts temperature, realizes the tune of thin film bulk acoustic wave resonator frequency
Section；The separation layer can separate regulating course and piezoelectricity stack layers, and support film bulk acoustic wave resonator agent structure improves device
Machinable durability, be formed simultaneously sound wave isolation, to promote Q values.
Description of the drawings
Fig. 1 is the overall structure signal for the adjustable thin film bulk acoustic wave resonator of frequency that the utility model embodiment provides
Figure；
Fig. 2 is the production process schematic diagram of the utility model.
In figure：1 is monocrystalline substrate, 2 silica, 3 regulating courses, 4 separation layers, 5 times electrodes, 6 piezoelectric layers, 7 through-holes, 8
Top electrode.
Specific implementation mode
The utility model is illustrated with reference to example：
Fig. 1 is the overall structure diagram of the utility model embodiment 1, as shown, a kind of adjustable thin-film body of frequency
Acoustic resonator, the resonator include substrate 1, temperature compensating layer 2, regulating course 3, separation layer 4 and piezoelectricity successively from bottom to up
Stack layers, the piezoelectricity stack layers include lower electrode 5, piezoelectric membrane 6 and top electrode 8, and the piezoelectric membrane 6 is arranged on separation layer 4,
The left end of the bottom surface of piezoelectric membrane 6 opens up a groove from outside to inside, and not through entire piezoelectric membrane 6, groove is used for down groove
The table in piezoelectric membrane 6 is arranged in the placement of electrode 5, the end face of the right end and piezoelectric membrane 6 of lower electrode 5, the top electrode 8
Face, the end face of the left end and piezoelectric membrane 6 of top electrode 8, the right end of the upper surface of the piezoelectric membrane 6 open up from top to bottom
One through-hole 7,7 bottom of through-hole extend to the upper surface of lower electrode 5, and the right end of top electrode 8 is not up to the aperture of through-hole 7.
The material of above-mentioned temperature compensating layer 2 is SiO2, and thickness is 1 μm -3 μm.
The material of above-mentioned regulating course 3 is metal, changes adjusting of the temperature into line frequency by external heat source.
The material of above-mentioned separation layer 4 is polyimides, and thickness is between 4 μm -10 μm.
Above-mentioned lower electrode 5 and the material of top electrode 8 are metal material.
The material of above-mentioned piezoelectric membrane 6 is one kind in ZnO, AlN, composite material.
Fig. 2 is the production method processing step schematic diagram of the utility model, as shown, frequency provided by the utility model
The production method of adjustable novel thin film bulk acoustic wave resonator, includes the following steps：
(a) N-type is used（100）Monocrystalline silicon is as substrate 1；
(b) on a silicon substrate, the method for practical PECVD prepares one layer of supporting layer silica 2, and thickness is about 2 μm；
(c) Au layers 3 are sputtered on supporting layer；
(d) separation layer 4 is prepared, material is polyimides, and thickness is about 6 μm；
(e) electrode 5 is simultaneously graphical under depositing Al；
(f) ZnO piezoelectric film 6 is deposited；
(g) lower electrode is exposed in etching through hole 7；
(h) depositing Al top electrode 8 and graphical, the lower electrode, piezoelectric membrane and powers on grade and forms piezoelectricity stack layers.
Compared with prior art, the utility model has the advantage of：The novel thin film bulk acoustic wave resonator, frequency can
It adjusts, and processing step is simple and reliable.The temperature-compensating layer material has positive temperature coefficient, can effectively reduce due to negative temperature
Temperature-frequency caused by coefficient piezoelectric membrane drifts about, and improves the stability of thin film bulk acoustic wave resonator, while temperature compensating layer material
Material need to have lower thermal conductivity characteristic, completely cut off temperature with this, and the heat that heat source transmits is made to be concentrated mainly in piezoelectricity stack layers, improve pressure
The heating efficiency of pile layer；Regulating course uses metal material, external heat source to heat regulating course, make piezoelectricity stack layers temperature change, then
Young's modulus changes, and frequency can also change, accordingly principle, adjusts temperature, realizes the tune of thin film bulk acoustic wave resonator frequency
Section；The separation layer can separate regulating course and piezoelectricity stack layers, and support film bulk acoustic wave resonator agent structure improves device
Machinable durability, be formed simultaneously sound wave isolation, to promote Q values.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all using equivalent
The technical solution that replacement or equivalent transformation mode are obtained, is within the scope of the present invention.
Claims (6)
1. a kind of adjustable thin film bulk acoustic wave resonator of frequency, it is characterised in that：The resonator includes lining successively from bottom to up
Bottom（1）, temperature compensating layer（2）, regulating course（3）, separation layer（4）With piezoelectricity stack layers, the piezoelectricity stack layers include lower electrode（5）、
Piezoelectric membrane（6）, top electrode（8）, the piezoelectric membrane（6）It is arranged in separation layer（4）On, piezoelectric membrane（6）Bottom surface a left side
End opens up a groove from outside to inside, and groove is not through entire piezoelectric membrane（6）, groove is for lower electrode（5）Placement, lower electricity
Pole（5）Right end and piezoelectric membrane（6）End face, the top electrode（8）It is arranged in piezoelectric membrane（6）Surface, power on
Pole（8）Left end and piezoelectric membrane（6）End face, the piezoelectric membrane（6）The right end of upper surface open up from top to bottom
One through-hole（7）, through-hole（7）Bottom extends to lower electrode（5）Upper surface, top electrode（8）Right end be not up to through-hole（7）'s
Aperture.
2. the adjustable thin film bulk acoustic wave resonator of a kind of frequency according to claim 1, it is characterised in that：The temperature is mended
Repay layer（2）Material be SiO2, thickness is 1 μm -3 μm.
3. the adjustable thin film bulk acoustic wave resonator of a kind of frequency according to claim 1, it is characterised in that：The regulating course
（3）Material be metal, adjusting of the temperature into line frequency is changed by external heat source.
4. the adjustable thin film bulk acoustic wave resonator of a kind of frequency according to claim 1, it is characterised in that：The separation layer
（4）Material be polyimides, thickness be 4 μm -10 μm.
5. the adjustable thin film bulk acoustic wave resonator of a kind of frequency according to claim 1, it is characterised in that：The lower electrode
（5）And top electrode（8）Material be metal material.
6. the adjustable thin film bulk acoustic wave resonator of a kind of frequency according to claim 1, it is characterised in that：The piezoelectricity is thin
Film（6）Material be ZnO, AlN, one kind in composite material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820800237.1U CN207939485U (en) | 2018-05-25 | 2018-05-25 | A kind of adjustable thin film bulk acoustic wave resonator of frequency |
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| CN201820800237.1U CN207939485U (en) | 2018-05-25 | 2018-05-25 | A kind of adjustable thin film bulk acoustic wave resonator of frequency |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109167586A (en) * | 2018-10-22 | 2019-01-08 | 开元通信技术（厦门）有限公司 | A kind of capacitor-piezoelectric type film bulk acoustic wave device and preparation method thereof |
| CN110233605A (en) * | 2019-05-13 | 2019-09-13 | 电子科技大学 | The optimization method and resonator of monocrystal thin films type bulk acoustic wave resonator |
| CN110460320A (en) * | 2019-08-06 | 2019-11-15 | 中国电子科技集团公司第二十六研究所 | Film layer structure, its manufacturing method and the filter including the film layer structure |
| CN110768644A (en) * | 2019-10-25 | 2020-02-07 | 河海大学常州校区 | Film bulk acoustic resonator and separation preparation process thereof |
| CN111049490A (en) * | 2019-12-31 | 2020-04-21 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN111262542A (en) * | 2020-02-27 | 2020-06-09 | 杭州见闻录科技有限公司 | Bulk acoustic wave resonator with heat dissipation structure and manufacturing process |
| CN113285687A (en) * | 2021-03-05 | 2021-08-20 | 天津大学 | Temperature compensation type film bulk acoustic resonator, forming method thereof and electronic equipment |
| WO2022174440A1 (en) * | 2021-02-22 | 2022-08-25 | 京东方科技集团股份有限公司 | Piezoelectric element, piezoelectric vibrator, manufacturing and driving methods therefor, and electronic device |
-
2018
- 2018-05-25 CN CN201820800237.1U patent/CN207939485U/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109167586A (en) * | 2018-10-22 | 2019-01-08 | 开元通信技术（厦门）有限公司 | A kind of capacitor-piezoelectric type film bulk acoustic wave device and preparation method thereof |
| CN110233605B (en) * | 2019-05-13 | 2022-05-03 | 电子科技大学 | Method for optimizing single crystal film type bulk acoustic wave resonator and resonator |
| CN110233605A (en) * | 2019-05-13 | 2019-09-13 | 电子科技大学 | The optimization method and resonator of monocrystal thin films type bulk acoustic wave resonator |
| CN110460320A (en) * | 2019-08-06 | 2019-11-15 | 中国电子科技集团公司第二十六研究所 | Film layer structure, its manufacturing method and the filter including the film layer structure |
| CN110768644A (en) * | 2019-10-25 | 2020-02-07 | 河海大学常州校区 | Film bulk acoustic resonator and separation preparation process thereof |
| CN110768644B (en) * | 2019-10-25 | 2022-09-16 | 河海大学常州校区 | Film bulk acoustic resonator and separation preparation process thereof |
| CN111049490B (en) * | 2019-12-31 | 2020-09-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN111049490A (en) * | 2019-12-31 | 2020-04-21 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN111262542A (en) * | 2020-02-27 | 2020-06-09 | 杭州见闻录科技有限公司 | Bulk acoustic wave resonator with heat dissipation structure and manufacturing process |
| CN111262542B (en) * | 2020-02-27 | 2022-03-25 | 见闻录(浙江)半导体有限公司 | Bulk acoustic wave resonator with heat dissipation structure and manufacturing process |
| US11742824B2 (en) | 2020-02-27 | 2023-08-29 | Jwl (Zhejiang) Semiconductor Co., Ltd. | Bulk acoustic resonator with heat dissipation structure and fabrication process |
| WO2022174440A1 (en) * | 2021-02-22 | 2022-08-25 | 京东方科技集团股份有限公司 | Piezoelectric element, piezoelectric vibrator, manufacturing and driving methods therefor, and electronic device |
| CN113285687A (en) * | 2021-03-05 | 2021-08-20 | 天津大学 | Temperature compensation type film bulk acoustic resonator, forming method thereof and electronic equipment |
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