CN110266285A - A kind of micromechanical resonator, its preparation and frequency trim bearing calibration - Google Patents
A kind of micromechanical resonator, its preparation and frequency trim bearing calibration Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02338—Suspension means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02283—Vibrating means
Abstract
The invention discloses a kind of micromechanical resonator, its preparation and frequency trim bearing calibrations.The micromechanics piezo-electric resonator includes silicon substrate, resonance oscillator, frequency modulation layer, thinner package film layer and metal pad structure with cavity structure.Using wafer-grade vacuum encapsulation method, by sealing structures such as silicon substrate cavity, resonance oscillator, frequency modulation in vacuum chamber.The frequency trim method of piezo-electric resonator proposed by the invention, using the variation of control host real-time monitoring resonant frequency, by adjusting the size for being passed through hanging frequency modulation layer and either assisting frequency modulation body structure surface frequency modulation layer electric current, by frequency trim to target frequency；And by testing probe station control bus automatically, the position of probe station test platform is automatically moved, realizes the wafer level automation frequency trim of micromechanical resonator.The present invention realizes the wafer-level vacuum package of micromechanical resonator and the precise fine-adjustment of frequency after encapsulation, and method is simple and efficiently, provides technical support for the functionization and commercialization of micromechanical resonator.
Description
Technical field
The invention belongs to micro mechanical sensor fields, and in particular to a kind of piezoelectricity micromechanical resonator, preparation method and
Frequency trim bearing calibration.
Background technique
Resonator refers to the electronic component for generating resonance frequency and frequency control.As the benchmark of generation time and frequency,
Resonator is suffered from consumer electronics, automotive electronics, Industry Control and field of wireless communication and is widely applied.Utilize microelectronics
The micromechanical resonator of mechanical system (Micro-Electro-Mechanical System, MEMS) technology production has size
It is small, low in energy consumption, quality factor (Q value) height and complementary metal oxide semiconductor (Complementary Metal Oxide
Semiconductor, CMOS) circuit production processing compatibility it is good the advantages that, it is growing day by day in the demand of industrial circle.
Different according to mechanical-electric coupling transposition mode, MEMS resonator mainly has condenser type and piezoelectric resonator two at present
Class.Compared with capacitor MEMS resonator, piezoelectric type MEMS resonator electromechanical coupling factor with higher, lower dynamic resistance
It is anti-, there is no capacitance gap narrow required for capacitive MEMS resonator, it is easy to batch micro operations, it is excellent that process uniformity is good etc.
Point.Thus, piezoelectric type MEMS resonator has a good application prospect.Not recently as MEMS piezoelectric resonator technology
Disconnected development, is based particularly on gradualling mature for aluminum nitride thin membrane material MEMS technology, piezoelectric mems resonator has become research
Hot spot.
Vacuum Package is one of practical and commercialized key factor of MEMS resonator.Vacuum Package can not only protect
The movable structure of micromechanical resonator is protected from extraneous physical damnification, guarantees the long-time stability and reliability of device, simultaneously
Vacuum Package can also eliminate energy loss caused by air damping, improve the Q value of micromechanical resonator.Currently, MEMS resonant
The Wafer-Level Packaging Technology of device is broadly divided into two classes.One is the thin film encapsulation technologies based on film deposition and sacrifice layer corrosion；
Another kind is the vacuum sealing technique based on bonding.Packaging method based on bonding techniques is a kind of more traditional Vacuum Package
The selectivity of technology, technical maturity, encapsulating material is wide, and cover board disk can be separated with device disk and simultaneous processing, production
It is high-efficient, but since its is with high costs, and the case where MEMS device structure and material tends to complicate and size is miniaturized
Under, bonding packaging technology is difficult to realize to be electrically interconnected and reroute and the encapsulation of microsize.In addition thin film encapsulation technology is
A kind of wafer-grade vacuum encapsulation method of comparative maturity, has that package dimension is small, is easily achieved and is electrically interconnected and reroutes, reliably
The advantages that property stability is good, while the encapsulation technology can obviously reduce device cost.
In addition, the consistency of original frequency is to realize another commercialized key element of MEMS resonator.To guarantee
MEMS resonator original frequency it is consistent, improve the yield rate of MEMS resonator, other than needing strict control processing technology, also
It needs that the original frequency of MEMS resonator is finely adjusted and is compensated using the method for frequency trim after encapsulation.
Resonance frequency (the f of MEMS resonator0) mainly by its geometric dimension, mode of oscillation and construction material properties (such as poplar
Family name's modulus E and density p) it is determined.From the perspective of more basic, resonance frequency by MEMS resonator effective rigidity keffWith
Effective mass meffIt determines:
Since there are intrinsic manufacturing tolerances for MEMS manufacturing technology, resonator construction size and structure can be caused to generate micro-
Small variation, so that the effective mass of resonator and effective rigidity change, so as to cause the offset of resonance frequency.In addition, by
It is uneven in device layer density of material or Young's modulus, it can also cause the variation of the initial resonant of MEMS resonator.Generally, due to
The original frequency of MEMS resonator caused by mismachining tolerance or different material characteristics etc. is fluctuated 1% or so.In MEMS resonant
Need the fluctuation of its original frequency within 0.1% during device is practical, within even 0.01%.Therefore, frequency trim
It is to realize another commercialized key technology of MEMS resonator.
Frequency trim is finely tuned after finely tuning and encapsulate before being divided into encapsulation.The shortcomings that finely tuning before encapsulation is, even if adjusting resonance
Device frequency, the residual stress etc. generated in encapsulation process can cause the drift again of encapsulated device resonance frequency.It is asked for this
Topic, the method that people had attempted to frequency modulation after many encapsulation, a kind of method are using laser heating evaporation in advance in resonator
The sacrificial metal layer deposited on device, the effective mass for changing device carry out frequency trim.But it is special that this mode must use
Encapsulating material so that so that laser of frequency modulation is transmissive to encapsulating material reaches device surface, therefore limits the application of this method.
Another method is to make metal and device material by being resistively heated to very high temperature in advance in device surface deposited metal layer
Diffuse to form alloy, change the equivalent stiffness of device, so as to adjust frequency, but this method can change MEMS resonator Q value and
The temperature coefficient (Temperature Coefficient of Frequency, TCF) of resonance frequency, causes MEMS resonator
It can be deteriorated.
Summary of the invention
Aiming at the problem that after traditional MEMS piezo-electric resonator encapsulates and encapsulates in the presence of frequency trim, the invention discloses
A kind of frequency trim method after MEMS piezo-electric resonator, preparation method, film encapsulation method and encapsulation, it is intended to using compared with
Low cost realizes the production of small size MEMS piezo-electric resonator and Vacuum Package, and uses resistance heating evaporation of metal or deposition
Method realize encapsulation after MEMS resonator frequency fine tuning.
Concrete scheme provided by the invention is as follows:
On the one hand, the present invention provides a kind of film MEMS piezo-electric resonator.
A kind of micromechanics piezo-electric resonator includes silicon substrate, resonance oscillator, frequency modulation layer, metal pad and thin-film package
Layer.
The resonance oscillator is from top to bottom successively by structure silicon layer, silicon oxide layer, bottom electrode layer, piezoelectric layer and top electrode layer
It stacks；
The frequency modulation layer is suspended on above resonator oscillator or upper side；
The packaging film is made of supporting layer and encapsulated layer, is located above frequency modulation layer, and forms vacuum with silicon substrate
Resonator structure, frequency modulation layer are sealed in vacuum chamber by chamber；
The bottom electrode layer, top electrode layer and frequency modulation layer are connected to metal pad by electricity wiring and realize electricity interlinkage.
Specifically, the material of the bottom electrode layer, top electrode layer and frequency modulation layer is selected from semiconductor or conductor material；It is described to lead
Body material is aluminium (Al), golden (Au), platinum (Pt) or molybdenum (Mo)；The semiconductor material is the polysilicon of doping；The piezoelectric layer
Selected from aluminium nitride (AlN), zinc oxide (ZnO) or lead zirconate titanate (PZT)；The supporting layer, encapsulated layer are by thin-film material system
At material is selected from amorphous silicon, polysilicon, silicon nitride or aluminium nitride.
Specifically, the structure of the resonance oscillator includes cuboid, disk, annulus, cantilever beam, clamped beam and tuning fork knot
Structure.
Specifically, the resonance oscillator contains auxiliary frequency modulation structure, structure is square plate or round plate structure, and is led to
Lintel is connect with resonance oscillator；Frequency modulation layer is located at vacantly in auxiliary frequency modulation superstructure or positioned at auxiliary frequency modulation body structure surface；It adjusts
The structure of frequency layer includes plate, folded beam and snakelike beam.
Second aspect, the present invention provide the production method of above-mentioned micromechanics piezo-electric resonator, comprising the following steps:
(1) method of thermal oxide or chemical vapor deposition silicon (Cavity- in the insulating substrate with cavity is used
Silicon-on-insulator, CSOI) one layer of silica of upper surface preparation；
(2) in silicon oxide surface depositions of bottom electrode layer, and patterning lithography and etching is carried out, retains corresponding pre-prepared resonance
Oscillator region and electricity interlinkage region；
(3) piezoelectric layer is prepared on bottom electrode layer surface；
(4) top electrode layer is prepared over the piezoelectric layer；
(5) the first sacrificial layer is deposited in top electrode layer, etches on the sacrificial layer connection top electrode below
Contact hole；
(6) one layer of metal is deposited on the first sacrificial layer, and metal layer is patterned and is etched as frequency modulation layer；
(7) the second sacrificial layer is prepared in frequency modulation layer upper surface；Groove is etched to pressure in the second sacrificial layer surface figure first
Electric layer upper surface etches through slot from the second sacrificial layer surface using patterning lithography and etching technology later and passes to substrate silicon
Cavity etches resonance oscillator structure；
(8) supporting layer of one layer of whole face covering is prepared in the second sacrificial layer surface, and etches several release on supporting layer
Then discharge hole erodes all sacrificial layers in resonance chamber region using gas chemistry corrosive medium and forms resonant cavity, and discharges
Resonance oscillator and frequency modulation layer；
(9) supporting layer upper surface deposit one layer of encapsulated layer, then encapsulated layer surface region etch contact hole, expose with
The metal pad that the external world is electrically interconnected, i.e. completion micromechanics piezo-electric resonator.
Specifically, the piezoelectric layer is selected from aluminium nitride (AlN), zinc oxide (ZnO) or lead zirconate titanate (PZT)；Hearth electrode
The material of layer, top electrode layer and frequency modulation layer is selected from semiconductor or conductor material；The conductor material is aluminium (Al), gold (Au), platinum
(Pt) or molybdenum (Mo)；The semiconductor material is the polysilicon of doping；One or two sacrificial layer is selected from silica；The support
Layer, encapsulated layer are made of thin-film material, and material is selected from amorphous silicon, polysilicon, silicon nitride or aluminium nitride.
Specifically, the preparation of the step (1), (2) silicon oxide layer and hearth electrode metal layer can also use ion implanting
Or the method for diffusion carries out heavy doping to CSOI top layer silicon, using the silicon of heavy doping as the hearth electrode of piezo-electric resonator.
Specifically, step (8) (9) thin-film package is using molecular beam epitaxial growth, low-pressure chemical vapor deposition or waits
Gas ions enhance chemical vapour deposition technique with depositing support layer and encapsulated layer.
The third aspect, the present invention provide the device that resonator realizes resonant frequency fine tuning and correction after encapsulation, including control
Host processed, frequency measuring instrument, current output unit and probe station is tested automatically,
Wherein:
(1) control host is connected by frequency measurement control bus with frequency measuring instrument；
(2) control host is connected by circuit control bus with current output unit；
(3) control host is connected by probe station control bus with automatic probe test platform；
It (4) include that the resonator disk of micromechanical resonator is placed on automatic prober platform testboard；
(5) frequency measuring instrument and current output unit are real by probe station measurement circuit and test probe and resonator
Now it is electrically connected.
The device of fourth aspect, present invention offer said frequencies fine tuning and correction realizes what resonant frequency was finely tuned and corrected
Method, comprising the following steps:
(1) be passed through electric current at metal pad both ends, frequency modulation layer electric heating evaporation, by atomic deposition in resonator surface or
Assist frequency modulation structure resonant frequency can be made to reduce using mass loading effect；
(2) by additional auxiliary frequency modulation structure, frequency modulation layer is deposited on supplementary structure surface, metal pad both ends are passed through electricity
Stream, electric heating evaporate frequency modulation layer, resonance frequency can be made to increase；
(3) by controlling the variation of host real-time monitoring resonant frequency and feeding back to control host；It is passed through by adjusting
Hanging frequency modulation layer either assists the size of frequency modulation body structure surface frequency modulation layer electric current, finally by frequency trim to target frequency；It is logical
Automatic test probe station control bus is crossed, the position of probe station test platform is automatically moved, realizes the automatic of resonator wafer level
Change frequency trim.
The mode of frequency trim is to pass through resistance being electrically connected the energization of frequency modulation layer both ends after present invention realization encapsulation
The hanging frequency modulation layer of the micro- evaporation of the form of joule heat, so that frequency modulation layer material atomic deposition is in piezo-electric stack resonance oscillator surface,
Due to mass loading effect, according to (1) formula it is found that the m of resonance oscillatoreffAnd keffIt changes, to finely tune resonance frequency
Rate f0, according to Sauerbrey equation (k/keff<<Δm/meff)), frequency changes delta f can be indicated by (2) formula:
Since frequency modulation layer is in high vacuum environment, the saturated vapor of material can be reached when not needing very high temperature
Pressure, such as: Al saturated vapour pressure p=10 when 821 DEG C-6Torr, at 1010 DEG C, vapour pressure is 10-4Torr, simultaneously because
Very thin thickness (μm), the heated current that need to be only passed through very little can reach 1000 DEG C or more of high temperature to frequency modulation layer by layer；Further, since
MEMS film bulk acoustic-wave resonator very thin thickness only needs very thin one layer of deposition quality to can be achieved with frequency trim, for example, working as resonance
When device is with a thickness of 5 μm, the Al after the deposition 1nm of surface can make frequency lower 116ppm.The present invention is using frequency modulation layer as evaporation
Layer, according to the physical property of different materials, the resistance heating temperature of use at least should be at 500 DEG C or more.
It further, is the precise fine-adjustment for realizing frequency, the invention proposes a kind of wafer levels to automate frequency trim side
Method.Using control host real-time monitoring resonant frequency and feedback regulation is passed through the method progress frequency trim of frequency modulation layer electric current,
Its structure and schematic diagram are as shown in Figure 5.It is characterized in that comprising controlling host, frequency measuring instrument (Network Analyzer or resistance
Analysis resistant instrument), the components such as current output unit and automatic test probe station, in which: control host by frequency measurement control always
Line is connected with frequency measuring instrument, be connected by circuit control bus with current output unit, pass through probe station control bus and
Automatic probe test platform is connected；The resonator disk of micromechanical resonator is placed on automatic prober platform testboard simultaneously；Frequency
Measuring instrument and current output unit are electrically connected by probe station measurement circuit and test probe with resonator realization.
By controlling the variation of host real-time monitoring resonant frequency and feeding back to control host；It is passed through vacantly by adjusting
Frequency modulation layer either assists the size of frequency modulation body structure surface frequency modulation layer electric current, finally by frequency trim to target frequency；By certainly
Dynamic test probe station control bus, automatically moves the position of probe station test platform, realizes the automation frequency of resonator wafer level
Rate fine tuning.
The invention has the following advantages:
(1) method while having made device architecture using thin-film package realizes close to the wafer level vacuum of device
Envelope, without the vacuum encapsulation process of subsequent complexity, reduces the complexity of design and processing, while reducing device size, drops
Low cost；
(2) monocrystalline silicon layer and silicon oxide layer are remained below harmonic oscillator in the device made, is conducive to the Q for improving device
It is worth and realizes passive type temperature-compensating；
(3) by controlling the variation of host real-time monitoring resonant frequency and feeding back to control host；It is passed through by adjusting
The method that hanging frequency modulation layer either assists the size of frequency modulation body structure surface frequency modulation layer electric current carries out frequency trim, and this method is simple
And efficiently, the consistency of the original frequency of resonator is improved.
Detailed description of the invention
Fig. 1 is the detailed process flow schematic diagram sectional view of embodiment 1, in which:
Fig. 1-1: the SOI substrate structure with cavity；
Fig. 1-2: thermal oxide or chemical vapor deposition method prepare one layer of silica；
Fig. 1-3: it is deposited as the bottom electrode structural metal-layer structure of resonance oscillator；
Fig. 1-4: depositing piezoelectric membrane structure, and etch electricity via hole；
Fig. 1-5: it is deposited as the top electrode structure of resonance oscillator, while being connected to hearth electrode metal；
Fig. 1-6: the first sacrificial layer of deposition；
Fig. 1-7: deposited frequency trim effect frequency modulation layer, and with resonance oscillator electrode conduction；
Fig. 1-8: depositing second sacrificial layer；
Fig. 1-9: etching production main body resonator structure；
Fig. 1-10: supporting layer is prepared in the second sacrificial layer surface, and etches relief hole；
Fig. 1-11: the device architecture after eroding sacrificial layer；
Fig. 1-12: last thin-film package, and etch electricity via hole.This figure is 1 resulting devices structure chart of case study on implementation；
Fig. 2-1 is that case study on implementation 2 carries out heavy doping to SOI upper layer of silicon；
Fig. 2-2 is the resulting devices structure chart of case study on implementation 2；
Fig. 3 is the resulting devices structure chart of case study on implementation 3；
Fig. 4 is the resulting devices structure chart of case study on implementation 4；
Fig. 5 is that wafer level automates frequency trim method schematic diagram.
Appended drawing reference: 1- silicon substrate, 2- cavity, 3- silicon oxide layer, 4- bottom electrode layer, 5- piezoelectric layer, 6- top electrode layer,
7- contact metal, the first sacrificial layer of 8-, 9- frequency modulation layer, 10- metal pad, the second sacrificial layer of 11-, 12- supporting layer, 13- are released
Discharge hole, 14- thin-film encapsulation layer, 15- electricity via hole, 16- resonance oscillator structure, 17- heavily doped silicon hearth electrode, 18- auxiliary are adjusted
Frequency structure I, 19- frequency modulation layer structure I I, 20- frequency modulation layer structure III.
Specific embodiment
In order to illustrate more clearly of the present invention and/or technical solution in the prior art, Detailed description of the invention sheet will be compareed below
Inventive embodiments.It should be evident that the accompanying drawings in the following description is only section Example of the invention, it is common for this field
For technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings, and obtain
Obtain other embodiments.
With reference to the accompanying drawing and case study on implementation, the present invention will be described in detail, and the contents of the present invention are completely without being limited thereto.
Embodiment 1
It should be noted that the basic conception that only the invention is illustrated in a schematic way is illustrated provided in the present embodiment,
Then it is only shown in figure with related component in the present invention rather than component count, shape when according to actual implementation and size are drawn,
The kenel, quantity and ratio of each component can be arbitrarily to change when its actual implementation, and its assembly layout kenel may also be more
It is complicated.
The present invention provides a kind of preparation method of MEMS piezo-electric resonator, comprising the following steps:
(1) as Figure 1-1, prepare a silicon substrate (SOI substrate) for having cavity, cavity shapes can be cylinder
Body, cuboid and irregular body (corresponding with resonance oscillator shape).
(2) as shown in Figs. 1-2, one layer of oxidation is prepared on the surface SOI using the method for thermal oxide or chemical vapor deposition
Silicon.
(3) as shown in Figure 1-3, depositing one layer of submicron thickness molybdenum in silicon oxide surface using sputtering or evaporation technology
Layer, and using patterning photoetching and lithographic technique, etching leaves pattern structure, the bottom electrode layer 4 as resonance oscillator.
(4) as shown in Figs 1-4, using sputtering or evaporation technology, micro-meter scale aluminum nitride piezoelectric film structure 5 is deposited,
Go out to pattern using lithography and etching, etches through-hole and connect with hearth electrode.
(5) as shown in Figs. 1-5, using sputtering or evaporation technology, micron thickness metal molybdenum is deposited, lithography and etching is utilized
Patterning, as top electrode layer 6, while molybdenum also is deposited upon lead to the hole site, is connected with hearth electrode.
(6) as shown in figures 1 to 6, the first sacrificial layer 8 is deposited on top electrode using LPCVD, and etches through-hole and resonance
Oscillator hearth electrode is connected with top electrode.Wherein sacrificial layer is silica.
(7) as shown in figs. 1-7, the aluminium that one layer of micron thickness is deposited in the first sacrificial layer surface, is gone out using lithography and etching
Pattern, in resonance oscillator region aluminium layer as frequency modulation layer 9, the metal pad 10 at lead to the hole site is for connecting resonance oscillator electricity
Pole.
(8) as shown in figures 1-8, using LPCVD method on frequency modulation layer 9 depositing second sacrificial layer 11.Second sacrificial layer is
Silica.
(9) as shown in figs 1-9, groove is etched to piezoelectric layer upper surface, after being used in the second sacrificial layer surface figure first
Continuous support layer material is filled up to the groove；It is etched later using patterning lithography and etching technology from the second sacrificial layer surface logical
Slot passes to the cavity of substrate silicon, etches resonance oscillator structure.
(10) as Figure 1-10 shows, it is sacrificed using method of PECVD, LPCVD or molecular beam epitaxial growth etc. second
Chart wheat flour is for polysilicon supporting layer 12.Several relief holes 13 are etched on this layer simultaneously, size, position and the quantity in hole can
Structure according to resonator carries out relevant design.
(11) method for utilizing chemical attack passes through relief hole for resonance oscillator area using etchant gas (gas phase hydrofluoric acid)
All sacrificial layers 8 and 11 remove in domain, and dispensing device structure forms hanging resonance oscillator 16, hanging 9 structure of frequency modulation layer, institute
It states structure and fixed (not shown) is supported by cantilever beam.As shown in figs. 1-11.
(12) final silicon nitride film encapsulated layer 14 is prepared on 12 surface of supporting layer using the methods of molecular beam epitaxy, specifically
Ground encapsulates film vacuum, and due to being vacuum in package cavity body, packaging film needs to carry the pressure of an atmospheric pressure
Power, therefore film vacuum packaging technology is higher to the thickness and quality requirement of packaging film.In addition, after depositing encapsulation film,
The packaging film of deposition is processed by shot blasting, after encapsulation, electricity via hole 15 is etched to metal using ion etching technology
10 position of pad.So far, preparation process terminates, and obtains complete final structure schematic diagram, as shown in figs. 1-12.
Small spacing is formd between the frequency modulation layer 9 and resonance oscillator 16, frequency modulation layer is etch patterning in step (8)
During also carried out electricity wiring, at 9 both ends of frequency modulation layer, the realization of external positive and negative anodes is electrically interconnected.
In the MEMS piezoelectric sensor structure prepared with the method for the present embodiment, by being passed through electricity at 9 both ends of frequency modulation layer
Stream, resistance heating evaporates material, due to resonance oscillator spacing very little, most of evaporation atom can be correspondingly deposited in resonance
Oscillator upper surface corresponding position forms additional mass load layer, is obtained by formula (2), resonator resonance frequency can be made to subtract
It is small.Further, since frequency modulation layer 9 and resonance oscillator 16 are relatively independent structure, the Q value and other performances of resonator will not be produced
It is raw to influence.
By controlling the variation of host real-time monitoring resonant frequency and feeding back to control host；It is passed through vacantly by adjusting
Frequency modulation layer either assists the size of frequency modulation body structure surface frequency modulation layer electric current, can be by frequency trim to target frequency；By certainly
Dynamic test probe station control bus, automatically moves the position of probe station test platform, the automatic of resonator wafer level can be realized
Change frequency trim.
Embodiment 2
According to the resonator structure in embodiment 1, process and structure can be carried out to it and be changed, reduce processing step and
Production cost, preparation step process is substantially the same manner as Example 1, and difference is:
1, step (3), which is replaced with, carries out heavy doping to SOI upper layer of silicon using ion implanting or the method for diffusion, such as Fig. 2-
Shown in 1.
2, (4) step in embodiment 1 is removed, does not use metal as hearth electrode, is directly made using the bottom silicon of heavy doping
For hearth electrode.Final structure is as shown in Fig. 2-2.
Embodiment 3
Embodiment 1 only provides the method that fine tuning reduces resonant frequency, in the present embodiment, resonance oscillator can be changed and adjust
The mode of the additional auxiliary frequency modulation structure in resonance oscillator symmetrical configuration both ends is carried out frequency trim, realizes resonance frequency by 9 structure of frequency layer
Rate increases and reduced bidirectional modulation.Its preparation step process is substantially the same manner as Example 1, and difference is:
1, after completing step (6), one layer of aluminium is being deposited using the method for evaporation and sputtering in top electrode metal layer upper surface
Frequency modulation layer will retain the aluminium layer of resonance oscillator both ends auxiliary frequency modulation structural region using patterning lithography and etching, carry out simultaneously
External positive and negative anodes are distinguished at electricity wiring, both ends.
2, resonance oscillator structure is etched simultaneously by lithographic technique in step (10), further patterns lithography and etching
Through slot between resonance oscillator and supplementary structure out is allowed to separate, and cantilever beam is used between resonance oscillator main body and supplementary structure
Connection.
3 device final structure figure of embodiment as shown in figure 3, for flat plane modal piezo-electric resonator (such as width and
Length stretches mode of resonance), its resonance mode will not be had an impact according to symmetrical auxiliary frequency modulation structure, frequency modulation layer knot
Structure II 19 is including corresponding above the hanging metal layer and supplementary structure above auxiliary frequency modulation body structure surface metallic aluminium, resonance oscillator
Hanging metal layer.Supplementary structure surface or its corresponding hanging metal layer in top can be arbitrarily heated at this time, when heating assists
When the metal layer of body structure surface, the evaporation of supplementary structure surface metal, the equivalent mass of resonator can reduce, humorous according to formula (2)
Vibration frequency becomes larger；When the hanging metal layer of heating top, metallic atom is deposited on resonator surface, and resonance frequency becomes smaller, from
And realize the effect of resonance frequency bidirectional trimming.
Embodiment 4
The also changeable frequency modulation layer structure of the present invention, resulting devices structure are as shown in Figure 4.By frequency modulation layer II 19 in embodiment 3
Locate the hanging layer at vertical correspondence and resonance oscillator region to remove, retains the corresponding frequency modulation layer with supplementary structure region, be changed to adjust
Frequency layer III20 structure, preparation methods steps are with the difference of embodiment 3: patterning light will be utilized in 1 step of embodiment (8)
It carves and etches, be only retained in frequency modulation layer III 20 of the hanging layer of supplementary structure overlying regions as frequency trim.Work as heating
When the frequency modulation layer on supplementary structure surface, supplementary structure surface frequency modulation material evaporation, the equivalent mass of resonator can reduce, resonance frequency
Rate becomes larger；When heating the hanging layer above supplementary structure, material atom is deposited on supplementary structure surface, and resonance frequency becomes smaller,
To realize the effect of resonance frequency bidirectional trimming.
The advantages of this structure, is to be deposited on the quality on resonance oscillator surface to humorous after being simply ignored the evaporation of frequency modulation layer
The influence for oscillator equivalent stiffness of shaking, while realizing frequency trim, increase the stability of this method for trimming.
The foregoing is only a preferred embodiment of the present invention, but the scope of protection of the invention be not limited thereto,
Any modification that anyone skilled in the art is made in the technical scope disclosed by the present invention, equivalent replacement and
Improve etc., it should be included within the protection scope of invention.
Claims (10)
1. a kind of micromechanics piezo-electric resonator, it is characterised in that:
Include silicon substrate, resonance oscillator, frequency modulation layer, metal pad and thin-film encapsulation layer；
The resonance oscillator is successively stacked by structure silicon layer, silicon oxide layer, bottom electrode layer, piezoelectric layer and top electrode layer from top to bottom
It forms；
The frequency modulation layer is suspended on above resonator oscillator or upper side；
The packaging film is made of supporting layer and encapsulated layer, is located above frequency modulation layer, and forms vacuum chamber with silicon substrate,
Resonator structure, frequency modulation layer are sealed in vacuum chamber；
The bottom electrode layer, top electrode layer and frequency modulation layer are connected to metal pad by electricity wiring and realize electricity interlinkage.
2. micromechanics piezo-electric resonator according to claim 1, it is characterised in that: the bottom electrode layer, top electrode layer and
The material of frequency modulation layer is selected from semiconductor or conductor material；The conductor material is aluminium (Al), golden (Au), platinum (Pt) or molybdenum (Mo)；
The semiconductor material is the polysilicon of doping；The piezoelectric layer is selected from aluminium nitride (AlN), zinc oxide (ZnO) or zirconium metatitanic acid
Lead (PZT)；The supporting layer, encapsulated layer are made of thin-film material, and material is selected from amorphous silicon, polysilicon, silicon nitride or nitrogen
Change aluminium.
3. micromechanics piezo-electric resonator according to claim 1, which is characterized in that the structure of the resonance oscillator includes length
Cube, disk, annulus, cantilever beam, clamped beam and tuning fork structure.
4. micromechanics piezo-electric resonator according to claim 1, which is characterized in that the resonance oscillator contains auxiliary frequency modulation
Structure, structure is square plate or round plate structure, and is connect by beam with resonance oscillator；Frequency modulation layer, which is located at, vacantly to be assisted
Frequency modulation superstructure is located at auxiliary frequency modulation body structure surface；The structure of frequency modulation layer includes plate, folded beam and snakelike beam.
5. a kind of production method of the described in any item resonators of claim 1-4, which comprises the following steps:
(1) using the method for thermal oxide or chemical vapor deposition in the insulating substrate silicon wafer (Cavity-Silicon- with cavity
On-insulator, CSOI) one layer of silica of upper surface preparation；
(2) in silicon oxide surface depositions of bottom electrode layer, and patterning lithography and etching is carried out, retains corresponding pre-prepared resonance oscillator
Region and electricity interlinkage region；
(3) piezoelectric layer is prepared on bottom electrode layer surface；
(4) top electrode layer is prepared over the piezoelectric layer；
(5) the first sacrificial layer is deposited in top electrode layer, and the contact for connecting top electrode below is etched on the sacrificial layer
Hole；
(6) one layer of frequency modulation layer is deposited on the first sacrificial layer, and frequency modulation layer is patterned and etched；
(7) the second sacrificial layer is prepared in frequency modulation layer upper surface；Groove is etched to piezoelectric layer in the second sacrificial layer surface figure first
Upper surface etches the sky that through slot passes to substrate silicon from the second sacrificial layer surface using patterning lithography and etching technology later
Chamber etches resonance oscillator knot；
(8) supporting layer of one layer of whole face covering is prepared in the second sacrificial layer surface, and etches several relief holes on supporting layer,
Then all sacrificial layers in resonance chamber region are eroded using gas chemistry corrosive medium and forms resonant cavity, and discharge resonance vibration
Son and frequency modulation layer；
(9) one layer of encapsulated layer is deposited in supporting layer upper surface, is then electrically connected region etch contact hole in encapsulation layer surface, reveals
The metal pad being electrically interconnected out with the external world, i.e. completion micromechanics piezo-electric resonator.
6. according to the method described in claim 5, it is characterized by: the piezoelectric layer is selected from aluminium nitride (AlN), zinc oxide
(ZnO) or lead zirconate titanate (PZT)；The material of bottom electrode layer, top electrode layer and frequency modulation layer is selected from semiconductor or conductor material；Institute
Conductor material is stated as aluminium (Al), golden (Au), platinum (Pt) or molybdenum (Mo)；The semiconductor material is the polysilicon of doping；Described
One or two sacrificial layers are selected from silica；The supporting layer, encapsulated layer are made of thin-film material, and material is selected from amorphous silicon, polycrystalline
Silicon, silicon nitride or aluminium nitride.
7. according to the method described in claim 5, it is characterized by: the step (1), (2) silicon oxide layer and hearth electrode metal
The preparation of layer can also carry out heavy doping to CSOI top layer silicon using ion implanting or the method for diffusion, be made using the silicon of heavy doping
For the hearth electrode of piezo-electric resonator.
8. method according to claim 5, which is characterized in that step (8), (9) described thin-film package use molecular beam epitaxy
Growth, low-pressure chemical vapor deposition or plasma enhanced chemical vapor deposition method are with depositing support layer and encapsulated layer.
9. the described in any item resonators of claim 1-4 realize the device of resonant frequency fine tuning and correction after encapsulation, special
Sign is: including control host, frequency measuring instrument, current output unit and automatically test probe station,
Wherein:
(1) control host is connected by frequency measurement control bus with frequency measuring instrument；
(2) control host is connected by circuit control bus with current output unit；
(3) control host is connected by probe station control bus with automatic probe test platform；
It (4) include that the resonator disk of micromechanical resonator is placed on automatic prober platform testboard；
(5) frequency measuring instrument and current output unit are realized electric by probe station measurement circuit and test probe and resonator
Learn connection.
10. the device of resonant frequency fine tuning and correction realizes resonance after realizing encapsulation using resonator as claimed in claim 9
The method of device frequency trim and correction, which comprises the following steps:
(1) electric current, frequency modulation layer electric heating evaporation, by atomic deposition in resonator surface or auxiliary are passed through at metal pad both ends
Frequency modulation structure can be such that resonant frequency reduces using mass loading effect；
(2) by additional auxiliary frequency modulation structure, frequency modulation layer is deposited on supplementary structure surface, metal pad both ends are passed through electric current,
Frequency modulation layer is evaporated in electric heating, resonance frequency can be made to increase；
(3) by controlling the variation of host real-time monitoring resonant frequency and feeding back to control host；It is passed through vacantly by adjusting
Frequency modulation layer either assists the size of frequency modulation body structure surface frequency modulation layer electric current, finally by frequency trim to target frequency；By certainly
Dynamic test probe station control bus, automatically moves the position of probe station test platform, realizes the automation frequency of resonator wafer level
Rate fine tuning.
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