CN108281363A - A kind of piezo-electric resonator/sensor packaging process of low cost - Google Patents
A kind of piezo-electric resonator/sensor packaging process of low cost Download PDFInfo
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- CN108281363A CN108281363A CN201810046581.0A CN201810046581A CN108281363A CN 108281363 A CN108281363 A CN 108281363A CN 201810046581 A CN201810046581 A CN 201810046581A CN 108281363 A CN108281363 A CN 108281363A
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- low cost
- packaging process
- resonator
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- 238000012858 packaging process Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 235000019687 Lamb Nutrition 0.000 claims abstract description 15
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 11
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000003989 dielectric material Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 3
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000002305 electric material Substances 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- FOLMBQLGENFKLO-UHFFFAOYSA-N [Pb].[Mg].[Nb] Chemical compound [Pb].[Mg].[Nb] FOLMBQLGENFKLO-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract description 4
- 239000008367 deionised water Substances 0.000 abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 abstract description 4
- 239000012530 fluid Substances 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 241000233855 Orchidaceae Species 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- -1 SiGe) Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention relates to a kind of piezo-electric resonator/sensor packaging process of low cost.The present invention uses Si on ready-made aluminium nitride lamb wave resonator AlN Lame mode resonator devices, Ge, four race's material such as SiGe is as sacrificial layer material, silica or silicon nitride film are as encapsulating structure layer, after aluminium nitride resonator completely release, deposition 8 high molecular materials of SU are sealed encapsulation, a full set of technique is completed at 400 DEG C, it is completely compatible and at low cost with existing CMOS technology, the thickness of encapsulated layer has the 8 layers of co-determination of silica and SU, 10 microns of encapsulated layers below can occur, it is suitble to use under the high-sensitivity environments such as fluid.After tested, the performance in deionized water environment of the device after encapsulation does not have significant change.
Description
Technical field
The present invention relates to a kind of piezo-electric resonator or the packaging process of piezoelectric transducer.
Background technology
It is higher that packaging technology cost is bonded under existing wafer scale, such as：“Hermetic Wafer Level Thin
Film Packaging for MEMS ", Jeffrey Bo Woon Soon, Navab Singh, EnesCalayir, Gary
K.Fedder, Gianluca Piazza, 2016IEEE 66th Electronic Components and Technology
Conference illustrates a kind of wafer scale silicon based package, is suitble to large-scale processing manufacture.But this method cost is higher, encapsulation
The thickness of layer is difficult to be thinned, thus is not suitable for the measurement of high sensor.
Invention content
The object of the present invention is to provide the highly sensitive sensings used under equal environment in a kind of suitable fluid or organism
The packaging technology of device, and the performance of the device after encapsulation is not influenced.
In order to achieve the above object, the technical solution of the present invention is to provide a kind of piezo-electric resonator/sensings of low cost
Device packaging process, which is characterized in that include the following steps：
Step 1, manufacture piezoelectricity lamb wave resonator or sensor in High Resistivity Si, then in piezoelectricity lamb wave resonator or
One layer of metallic bottom electrode layer is plated on sensor；
Step 2, plated on metallic bottom electrode layer a layer of piezo-electric material layer (such as aluminium nitride, either adulterate aluminium nitride or
Other piezoelectric materials), and use wet-etching technology expose portion metallic bottom electrode；
Step 3, one layer of metal of plating does top electrode on piezoelectric material layer；
Step 4, using containing Cl2、BCl3Ionized gas etch piezoelectric material layer；
Step 5, one layer of amorphous state of sputtering sedimentation, four race's material layer are in piezoelectricity lamb wave resonator or the active area of sensor
Above domain；
Step 6 deposits one layer of insulating dielectric materials layer using plasma enhanced chemical vapor depositing operation, utilizes dry etching
Release aperture is carved on insulating dielectric materials layer；
Step 7 etches the part body silicon material below four race's material layer of amorphous state and metallic bottom electrode layer using xenon difluoride
Material discharges completely until piezoelectricity lamb wave resonator or sensor；
Step 8 is applied one layer SU-8 layers by way of gluing, and is made using photoetching process using SU-8 layers of negtive photoresist characteristic
Carry out electrical measurement is exposed in electrode plate.
Preferably, in the step 2, the piezoelectric material is the piezoelectric material of high electromechanical coupling factor.
Preferably, the piezoelectric material of the high electromechanical coupling factor is aluminium nitride or the aluminium nitride of the doping containing scandium (Sc)
Deng.
Preferably, the thickness of the piezoelectricity lamb wave resonator or sensor piezoelectric material layer is 500nm~1 μm, described
The thickness of metallic bottom electrode layer is 100~300nm.
Preferably, in the step 6, the thickness of the insulating dielectric materials layer is 2 μm.
Preferably, in the step 6, the insulating dielectric materials are silica or silicon nitride.
Preferably, in the step 8, SU-8 layers of the thickness is 4~8 μm.
Preferably, four race's material of the amorphous state be amorphous state a materials, wherein a be column IV element compound (such as
SiGe), or it is amorphous state column IV element material (such as Ge).
The present invention uses Si, Ge, SiGe on ready-made piezoelectricity lamb wave resonator Lame mode resonator devices
It is complete in resonator Deng four race's materials as sacrificial layer material, silica or silicon nitride film as encapsulating structure layer
After full release, deposition SU-8 high molecular materials are sealed encapsulation, and a full set of technique is completed at 400 DEG C, complete with existing CMOS technology
Complete compatible and at low cost, the thickness of encapsulated layer has silica and SU-8 layers of co-determination, can occur 10 microns or less in fact
Encapsulated layer, be suitble to use under the high-sensitivity environments such as fluid.After tested, the performance in deionized water environment of the device after encapsulation
There is no significant change.
Description of the drawings
Fig. 1 a to Fig. 1 h are the process drawing of the present invention；
Fig. 2 is the packaged device that process actual fabrication through the invention is produced, in deionization water ring
Device performance figure under border；
Fig. 3 was the packaged device produced of process actual fabrication through the invention after 9 months,
Device performance figure under deionized water environment.
Specific implementation mode
In order to make the present invention more obvious and understandable, hereby with preferred embodiment, and attached drawing is coordinated to be described in detail below.
The present invention provides a kind of piezo-electric resonator/sensor packaging process of low cost, include the following steps：
Step 1, as shown in Figure 1a, manufactures piezoelectricity lamb wave resonator or sensor in High Resistivity Si, then in piezoelectricity orchid
One layer of metallic bottom electrode layer is plated on nurse wave resonator or sensor.The thickness of piezoelectricity lamb wave resonator or sensor is 1 μm, gold
The thickness for belonging to bottom electrode layer is 100nm.
Step 2, as shown in Figure 1 b, one layer of aln layer of plating on metallic bottom electrode layer, and it is sudden and violent using wet-etching technology
Reveal part metals hearth electrode.The thickness of aln layer is 100nm.
Step 3, as illustrated in figure 1 c on aln layer plates one layer of metal and does top electrode.
Step 4, as shown in Figure 1 d, using containing Cl2、BCl3Ionized gas etch nitride aluminium layer.
Step 5, as shown in fig. le, sputtering sedimentation one layer of non-crystalline silicon a-Si (such as Ge or SiGe) layers are in aluminium nitride orchid nurse
Above the active region of wave resonator or sensor.
Step 6, as shown in Figure 1 f, utilize plasma enhanced chemical vapor depositing operation deposit layer of silicon dioxide layer, utilize
It is dry-etched in silicon dioxide layer and carves release aperture.The thickness of silicon dioxide layer is 2 μm.
Step 7, as shown in Figure 1 g, utilizes xenon difluoride a-Si layer of non-crystalline silicon of etching and the part below metallic bottom electrode layer
Body silicon materials discharge completely until aluminium nitride lamb wave resonator or sensor；
Step 8, as shown in figure 1h, applies one layer SU-8 layers, and adopt using SU-8 layers of negtive photoresist characteristic by way of gluing
So that electrode plate is exposed with photoetching process and carries out electrical measurement.SU-8 layers of thickness is 4~8 μm.
Fig. 2 shows the packaged device that an actual fabrication is produced, and device performance does not have under deionized water environment
Have significant change.
Fig. 3 indicates that packaged resonator behavior is still no after 9 months and significant changes occurs.
Claims (8)
1. a kind of piezo-electric resonator/sensor packaging process of low cost, which is characterized in that the packaging process exists
400 DEG C of completions, include the following steps：
Step 1, manufacture piezoelectricity lamb wave resonator or sensor are in High Resistivity Si, then in piezoelectricity lamb wave resonator or sensing
One layer of metallic bottom electrode layer is plated on device；
Step 2 plates a layer of piezo-electric material layer on metallic bottom electrode layer, and using wet-etching technology expose portion metal bottom electricity
Pole；
Step 3, one layer of metal of plating does top electrode on piezoelectric material layer；
Step 4, using containing Cl2、BCl3Ionized gas etch piezoelectric material layer；
Step 5, one layer of amorphous state of sputtering sedimentation, four race's material layer are on the active region of piezoelectricity lamb wave resonator or sensor
Face；
Step 6 deposits one layer of insulating dielectric materials layer using plasma enhanced chemical vapor depositing operation, exhausted using being dry-etched in
Release aperture is carved in edge layer of dielectric material；
Step 7, to etch the part body silicon materials below four race's material layer of amorphous state and metallic bottom electrode layer using xenon difluoride straight
It is discharged completely to piezoelectricity lamb wave resonator or sensor；
Step 8 is applied one layer SU-8 layers by way of gluing, and makes electrode using photoetching process using SU-8 layers of negtive photoresist characteristic
Carry out electrical measurement is exposed in plate.
2. a kind of piezo-electric resonator/sensor packaging process of low cost as described in claim 1, which is characterized in that
In the step 2, the piezoelectric material is the piezoelectric material of high electromechanical coupling factor.
3. a kind of piezo-electric resonator/sensor packaging process of low cost as claimed in claim 2, which is characterized in that
The piezoelectric material of the high electromechanical coupling factor is the aluminium nitride aluminium nitride that either Sc containing scandium is adulterated or lithium niobate or niobium magnesium
Lead plumbate.
4. a kind of piezo-electric resonator/sensor packaging process of low cost as described in claim 1, which is characterized in that
The piezoelectric material thickness of the piezoelectricity lamb wave resonator or sensor is 500nm~1 μm, the thickness of the metallic bottom electrode layer
For 100~300nm.
5. a kind of piezo-electric resonator/sensor packaging process of low cost as described in claim 1, which is characterized in that
In the step 6, the thickness of the insulating dielectric materials layer is 2 μm.
6. a kind of piezo-electric resonator/sensor packaging process of low cost as described in claim 1, which is characterized in that
In the step 6, the insulating dielectric materials are silica or silicon nitride.
7. a kind of piezo-electric resonator/sensor packaging process of low cost as described in claim 1, which is characterized in that
In the step 8, SU-8 layers of the thickness is 4~8 μm.
8. a kind of piezo-electric resonator/sensor packaging process of low cost as described in claim 1, which is characterized in that
Four race's material of the amorphous state is amorphous state a materials, wherein a is column IV element, or is amorphous state column IV element material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810046581.0A CN108281363B (en) | 2018-01-17 | 2018-01-17 | Low-cost piezoelectric resonator/sensor packaging process method |
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|---|---|---|---|
| CN201810046581.0A CN108281363B (en) | 2018-01-17 | 2018-01-17 | Low-cost piezoelectric resonator/sensor packaging process method |
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| Publication Number | Publication Date |
|---|---|
| CN108281363A true CN108281363A (en) | 2018-07-13 |
| CN108281363B CN108281363B (en) | 2020-04-14 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109450401A (en) * | 2018-09-20 | 2019-03-08 | 天津大学 | Flexible unitary lamb wave resonator and forming method thereof |
| CN110071703A (en) * | 2019-02-19 | 2019-07-30 | 天津大学 | A kind of duplexer |
| CN110266285A (en) * | 2019-05-31 | 2019-09-20 | 武汉大学 | A kind of micromechanical resonator, its preparation and frequency trim bearing calibration |
| CN111934635A (en) * | 2020-06-30 | 2020-11-13 | 上海科技大学 | Micro-electromechanical wireless signal awakening receiver and preparation method thereof |
| WO2022226914A1 (en) * | 2021-04-29 | 2022-11-03 | 天津大学 | Piezoelectric mems silicon resonator having beam structure, forming method therefor, and electronic device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109450401A (en) * | 2018-09-20 | 2019-03-08 | 天津大学 | Flexible unitary lamb wave resonator and forming method thereof |
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| CN110266285A (en) * | 2019-05-31 | 2019-09-20 | 武汉大学 | A kind of micromechanical resonator, its preparation and frequency trim bearing calibration |
| CN111934635A (en) * | 2020-06-30 | 2020-11-13 | 上海科技大学 | Micro-electromechanical wireless signal awakening receiver and preparation method thereof |
| CN111934635B (en) * | 2020-06-30 | 2024-03-01 | 上海科技大学 | Micro-electromechanical wireless signal wake-up receiver and preparation method thereof |
| WO2022226914A1 (en) * | 2021-04-29 | 2022-11-03 | 天津大学 | Piezoelectric mems silicon resonator having beam structure, forming method therefor, and electronic device |
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| Publication number | Publication date |
|---|---|
| CN108281363B (en) | 2020-04-14 |
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