CN113328724A - Bulk acoustic wave resonator and manufacturing method thereof - Google Patents
Bulk acoustic wave resonator and manufacturing method thereof Download PDFInfo
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- CN113328724A CN113328724A CN202110831867.1A CN202110831867A CN113328724A CN 113328724 A CN113328724 A CN 113328724A CN 202110831867 A CN202110831867 A CN 202110831867A CN 113328724 A CN113328724 A CN 113328724A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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Abstract
The embodiment of the invention provides a bulk acoustic wave resonator and a manufacturing method thereof, wherein the method comprises the following steps: providing a substrate, and forming an acoustic reflection structure in the substrate or on the surface of the substrate; forming a first electrode on one side of the substrate, the first electrode at least partially covering the acoustic reflection structure; forming a piezoelectric layer on one side of the first electrode, which is far away from the substrate, wherein a temperature compensation layer and at least one first crystal lattice induction layer are arranged in or on the piezoelectric layer, and the lattice mismatch degree of any first crystal lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer; a second electrode is formed on a side of the piezoelectric layer facing away from the substrate. Since the lattice mismatch degree of the first lattice-inducing layer and the piezoelectric layer is smaller than that of the temperature-compensating layer and the piezoelectric layer, the lattice mismatch degree of the first lattice-inducing layer and the piezoelectric layer is more matched than that of the temperature-compensating layer, so that the lattice mismatch between the piezoelectric layer and the temperature-compensating layer can be improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to a bulk acoustic wave resonator and a manufacturing method thereof.
Background
Film Bulk Acoustic resonators (FBARs, also known as Bulk Acoustic resonators or BAWs) are widely used in important fields such as radio frequency, biology and medicine for wireless communication because of their characteristics of small size, high operating frequency, low power consumption, high quality factor (Q value), direct output of frequency signals, and compatibility with CMOS processes.
The bulk acoustic wave resonator includes a sandwich structure having a lower electrode-a piezoelectric layer-an upper electrode fabricated on a substrate. The bulk acoustic wave resonator converts an electrical signal input from an electrode into mechanical resonance using the inverse piezoelectric effect of the piezoelectric layer. Since the operating frequency of the bulk acoustic wave resonator varies with temperature, a temperature compensation layer needs to be added to the bulk acoustic wave resonator to reduce the drift of the operating frequency. However, the addition of a temperature compensation layer results in an electromechanical coupling coefficient (Kt) of the piezoelectric layer2) The deterioration affects the performance of the bulk acoustic wave resonator.
Disclosure of Invention
In view of this, embodiments of the present invention provide a bulk acoustic wave resonator and a method for manufacturing the same to solve the problem of poor electromechanical coupling coefficient of a piezoelectric layer due to the addition of a temperature compensation layer.
In order to solve the above problems, embodiments of the present invention provide the following technical solutions:
a method for manufacturing a bulk acoustic wave resonator comprises the following steps:
providing a substrate, and forming an acoustic reflection structure in the substrate or on the surface of the substrate;
forming a first electrode on one side of the substrate, the first electrode at least partially covering the acoustic reflection structure;
forming a piezoelectric layer on one side, away from the substrate, of the first electrode, wherein a temperature compensation layer and at least one first lattice induction layer are arranged in or on the piezoelectric layer, the at least one first lattice induction layer is arranged on one side, away from the substrate, of the temperature compensation layer, and the lattice mismatch degree of any first lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer;
a second electrode is formed on a side of the piezoelectric layer facing away from the substrate.
Optionally, forming a piezoelectric layer on a side of the first electrode facing away from the substrate, where the piezoelectric layer has a temperature compensation layer and at least one first lattice inducing layer inside, and includes:
forming a first sub-piezoelectric layer on one side of the first electrode, which faces away from the substrate;
forming a temperature compensation layer on one side of the first sub-piezoelectric layer, which faces away from the substrate;
forming at least one first lattice inducing layer on one side of the temperature compensation layer, which faces away from the substrate;
and forming a second sub-piezoelectric layer on the side of the at least one first lattice inducing layer, which faces away from the substrate, wherein the first sub-piezoelectric layer and the second sub-piezoelectric layer form the piezoelectric layer.
Optionally, before forming the temperature compensation layer on the side of the first sub-piezoelectric layer facing away from the substrate, the method further includes:
and forming a second lattice inducing layer on one side of the first sub-piezoelectric layer, which is away from the substrate, wherein the temperature compensating layer is wrapped by the second lattice inducing layer and the first lattice inducing layer, and the lattice mismatch degree of the second lattice inducing layer and the piezoelectric layer is smaller than that of the temperature compensating layer and the piezoelectric layer.
Optionally, forming a piezoelectric layer on a side of the first electrode facing away from the substrate, where the piezoelectric layer has a temperature compensation layer and at least one first lattice inducing layer on a surface thereof, and the method includes:
forming a temperature compensation layer on one side of the first electrode, which is far away from the substrate;
forming at least one first lattice inducing layer on one side of the temperature compensation layer, which faces away from the substrate;
forming a piezoelectric layer on a side of the at least one first lattice inducing layer facing away from the substrate, the piezoelectric layer at least partially covering the temperature compensation layer and the at least one first lattice inducing layer.
Optionally, the at least one first lattice inducing layer includes a 1 st layer of the first lattice inducing layer through an nth layer of the first lattice inducing layer, and the forming the at least one first lattice inducing layer includes:
sequentially forming a 1 st layer of first lattice induction layer to an Nth layer of first lattice induction layer in the direction of the substrate pointing to the temperature compensation layer;
wherein the lattice mismatch between the ith first lattice inducing layer and the piezoelectric layer is less than the lattice mismatch between the ith-1 first lattice inducing layer and the piezoelectric layer; wherein N is a natural number greater than 1, and i is any natural number between 1 and N.
Optionally, forming a temperature compensation layer includes:
forming a temperature compensation layer having a mesh-like structure with a plurality of meshes;
or forming a temperature compensation layer comprising a plurality of sub compensation layers, wherein the plurality of sub compensation layers are arranged in an array;
and/or forming a temperature compensation layer with a surface with inclined side surfaces.
A bulk acoustic wave resonator comprising:
a substrate, wherein an acoustic reflection structure is arranged inside or on the surface of the substrate;
a first electrode disposed on one side of the substrate, the first electrode at least partially covering the acoustic reflection structure;
the piezoelectric layer is arranged on one side, away from the substrate, of the first electrode, the temperature compensation layer and at least one first lattice induction layer are arranged in or on the piezoelectric layer, the at least one first lattice induction layer is arranged on one side, away from the substrate, of the temperature compensation layer, and the lattice mismatch degree of any first lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer;
and the second electrode is arranged on one side of the piezoelectric layer, which is far away from the substrate.
Optionally, the temperature compensation layer is located on a side of the substrate, the temperature compensation layer is wrapped by the second lattice induction layer and the first lattice induction layer, and a lattice mismatch degree between the second lattice induction layer and the piezoelectric layer is smaller than a lattice mismatch degree between the temperature compensation layer and the piezoelectric layer.
Optionally, the at least one first lattice inducing layer includes a 1 st layer first lattice inducing layer to an nth layer first lattice inducing layer;
the 1 st layer first lattice induction layer to the Nth layer first lattice induction layer are sequentially arranged in the direction of the substrate pointing to the temperature compensation layer; the lattice mismatch degree of the ith layer of the first lattice induction layer and the piezoelectric layer is smaller than that of the (i-1) th layer of the first lattice induction layer and the piezoelectric layer; wherein N is a natural number greater than 1, and i is any natural number between 1 and N.
Optionally, the material of the lattice-inducing layer comprises a metal; the metal comprises Mo, W, Au, Sc, Al, Pt and Ti; the material of the temperature compensation layer comprises polycrystalline silicon, boron phosphate glass, silicon dioxide, chromium and tellurium oxide.
Optionally, the temperature compensation layer is a grid-like structure with a plurality of meshes;
or the temperature compensation layer comprises a plurality of sub compensation layers which are arranged in an array;
and/or the side surface of the temperature compensation layer is an inclined surface.
According to the bulk acoustic wave resonator and the manufacturing method thereof provided by the embodiment of the invention, the temperature compensation layer and the at least one first lattice induction layer are arranged in or on the piezoelectric layer, the first lattice induction layer is arranged on one side of the temperature compensation layer, which is far away from the substrate, and the lattice mismatch degree of the first lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer, so that compared with the temperature compensation layer, the lattices of the first lattice induction layer and the piezoelectric layer are more matched, the lattice mismatch between the piezoelectric layer and the temperature compensation layer can be improved, the electromechanical coupling coefficient of the piezoelectric layer can be further improved, and the performance of the bulk acoustic wave resonator is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present invention;
fig. 2 to 12 are schematic cross-sectional structural diagrams illustrating a manufacturing process of a bulk acoustic wave resonator according to an embodiment of the present invention;
fig. 13 is a schematic cross-sectional view of a first lattice inducing layer according to an embodiment of the present invention;
fig. 14 is a schematic cross-sectional view of a first lattice inducing layer according to another embodiment of the present invention;
FIG. 15 is a schematic diagram illustrating a top view of a temperature compensation layer according to an embodiment of the present invention;
fig. 16 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another embodiment of the present invention;
FIG. 17 is a schematic top view of a temperature compensation layer according to another embodiment of the present invention;
FIG. 18 is a schematic top view of a temperature compensation layer according to another embodiment of the present invention;
fig. 19 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another embodiment of the present invention;
fig. 20 is a schematic top view of a bulk acoustic wave resonator according to an embodiment of the present invention;
fig. 21 is a schematic cross-sectional structure diagram of a bulk acoustic wave resonator according to an embodiment of the present invention.
Detailed Description
As described in the background, the addition of the temperature compensation layer in the bulk acoustic wave resonator can result in the deterioration of the electromechanical coupling coefficient of the piezoelectric layer, which affects the performance of the bulk acoustic wave resonator. The inventors have found that the cause of such a problem is mainly that the lattice mismatch of the piezoelectric layer and the temperature compensation layer is severe, resulting in deterioration of the crystal orientation of the piezoelectric layer.
Based on this, the present invention provides a bulk acoustic wave resonator and a method for manufacturing the same to overcome the above problems in the prior art, the method comprising:
providing a substrate, and forming an acoustic reflection structure in the substrate or on the surface of the substrate;
forming a first electrode on one side of the substrate, the first electrode at least partially covering the acoustic reflection structure;
forming a piezoelectric layer on one side of the first electrode, which is far away from the substrate, wherein a temperature compensation layer and at least one first lattice induction layer are arranged in or on the piezoelectric layer, the first lattice induction layer is arranged on one side of the temperature compensation layer, which is far away from the substrate, and the lattice mismatch degree of any first lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer;
a second electrode is formed on a side of the piezoelectric layer facing away from the substrate.
According to the bulk acoustic wave resonator and the manufacturing method thereof provided by the invention, the temperature compensation layer and the at least one first lattice induction layer are arranged in or on the piezoelectric layer, the first lattice induction layer is arranged on one side of the temperature compensation layer, which is far away from the substrate, and the lattice mismatch degree of any first lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer, so that compared with the temperature compensation layer, the lattices of the first lattice induction layer and the piezoelectric layer are more matched, the lattice mismatch between the piezoelectric layer and the temperature compensation layer can be improved, the electromechanical coupling coefficient of the piezoelectric layer can be further improved, and the performance of the bulk acoustic wave resonator is improved.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a method for manufacturing a bulk acoustic wave resonator, as shown in fig. 1, the method comprises the following steps:
s101: providing a substrate, and forming an acoustic reflection structure in the substrate or on the surface of the substrate;
in some embodiments of the present invention, as shown in fig. 2, after providing the substrate 10, a groove 100 may be formed inside the substrate 10, then a sacrificial layer 102 may be formed inside the groove 100, and the surface of the substrate 10 may be planarized, so that the surfaces of the substrate 10 and the sacrificial layer 102 are flat surfaces, and after forming the first electrode, the piezoelectric layer, and the second electrode on the surfaces, the sacrificial layer may be removed to form the acoustic reflection structure 101 shown in fig. 10 to 12. Of course, the invention is not limited to this, and in other embodiments, the acoustic reflection structure may be formed in other manners, which will not be described herein.
The groove 100 may be formed by a wet etching process or a dry etching process, which is not described herein again. Alternatively, the material of the substrate 10 is single crystal silicon, quartz, gallium arsenide, sapphire, or the like.
It should be noted that, in the structure shown in fig. 2, only the formation of the groove 100 inside the substrate 10 is taken as an example for description, but the present invention is not limited thereto, and in other embodiments, a structural layer may be formed on the surface of the substrate 10, and the structural layer may be etched to form the groove 100 on the surface of the substrate 10.
S102: forming a first electrode on one side of the substrate, the first electrode at least partially covering the acoustic reflection structure;
as shown in fig. 3, a first electrode 11 is formed on one side of the substrate 10, and the first electrode 11 at least partially covers the sacrificial layer 102, so that the first electrode 11 at least partially covers the acoustic reflection structure 101 formed later. The first electrode 11 may cover a partial region of the sacrificial layer 102, may cover a whole region of the sacrificial layer 102, and may also cover the sacrificial layer 102 and the substrate 10 around the sacrificial layer 102, which is not described herein again.
It should be noted that, in some embodiments of the present invention, before forming the first electrode 11, a seed layer may also be formed on the side of the substrate 10 having the groove 100, and then the first electrode 11 is formed on the seed layer, so as to improve the film quality of the first electrode 11 through the seed layer. Optionally, the material of the seed layer is aluminum nitride, scandium-doped aluminum nitride, zinc oxide material, and the like.
S103: forming a piezoelectric layer on one side, away from the substrate, of the first electrode, wherein a temperature compensation layer and at least one first lattice induction layer are arranged in or on the piezoelectric layer, the first lattice induction layer is arranged on one side, away from the substrate, of the temperature compensation layer, and the lattice mismatch degree of the first lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer;
in some embodiments of the present invention, forming a piezoelectric layer on a side of the first electrode facing away from the substrate, the piezoelectric layer having a temperature compensation layer and at least one first lattice inducing layer therein, includes:
forming a first sub-piezoelectric layer on one side of the first electrode, which faces away from the substrate;
forming a temperature compensation layer on one side of the first sub-piezoelectric layer, which is far away from the substrate;
forming at least one first lattice inducing layer on one side of the temperature compensation layer, which is far away from the substrate;
and forming a second sub-piezoelectric layer on the side, facing away from the substrate, of the at least one first lattice inducing layer, wherein the first sub-piezoelectric layer and the second sub-piezoelectric layer form a piezoelectric layer.
As shown in fig. 4, a first sub-piezoelectric layer 12A is formed on a side of the first electrode 11 away from the substrate 10, and the first sub-piezoelectric layer 12A at least covers the first electrode 11, but may only cover the first electrode 11, or may cover the first electrode 11 and the substrate 10 around the first electrode 11. The material of the first sub-piezoelectric layer 12A includes aluminum nitride, doped aluminum nitride, zinc oxide, and the like.
After that, as shown in fig. 5, the temperature compensation layer 120 is formed on the side of the first sub-piezoelectric layer 12A facing away from the substrate 10, and then, as shown in fig. 6, the first lattice inducing layer 121A is formed on the side of the temperature compensation layer 120 facing away from the substrate 10, the first lattice inducing layer 121A at least partially covering the surface of the side of the temperature compensation layer 120 facing away from the substrate 10. In the embodiment shown in the drawings, only one first lattice inducing layer 121A is taken as an example for illustration, but the invention is not limited thereto, and in other embodiments, a plurality of first lattice inducing layers 121A may be further formed on the side of the temperature compensating layer 120 away from the substrate 10.
The first lattice inducing layer 121A may cover only a surface of the temperature compensating layer 120 away from the substrate 10, or may cover a surface of the temperature compensating layer 120 away from the substrate 10 and a peripheral side surface of the surface. Optionally, the material of the temperature compensation layer 120 is polysilicon, borophosphate glass, silicon dioxide, chromium or tellurium oxide, or the like. The material of the first lattice-inducing layer 121A is a metal, and the metal is a material such as Mo, W, Au, Sc, Al, Pt, or Ti that is more matched with the lattice of the piezoelectric layer 12.
After that, as shown in fig. 7, the second sub-piezoelectric layer 12B is formed on the side of the first lattice-inducing layer 121A facing away from the substrate 10. Alternatively, the material of the second sub-piezoelectric layer 12B is the same as the material of the first sub-piezoelectric layer 12A, and the first sub-piezoelectric layer 12A and the second sub-piezoelectric layer 12B form the piezoelectric layer 12. At this time, the temperature compensation layer 120 and the first lattice-inducing layer 121A are located inside the piezoelectric layer 12.
Because the lattice mismatch between the first lattice inducing layer 121A and the piezoelectric layer 12 is smaller than the lattice mismatch between the temperature compensating layer 120 and the piezoelectric layer 12, compared with the temperature compensating layer 120, the lattice mismatch between the piezoelectric layer 12 and the side of the temperature compensating layer 120 away from the substrate 10 can be improved by matching the lattices of the first lattice inducing layer 121A and the piezoelectric layer 12, and thus the electromechanical coupling coefficient of the piezoelectric layer 12 above the temperature compensating layer 120 can be improved, and the performance of the bulk acoustic wave resonator can be improved.
On this basis, in other embodiments of the present invention, before forming the temperature compensation layer on the side of the first sub-piezoelectric layer facing away from the substrate, the method further includes:
and a second crystal lattice inducing layer is formed on one side of the first sub-piezoelectric layer, which is far away from the substrate, the temperature compensating layer is wrapped by the second crystal lattice inducing layer and the first crystal lattice inducing layer, and the lattice mismatch degree of the second crystal lattice inducing layer and the piezoelectric layer is smaller than that of the temperature compensating layer and the piezoelectric layer.
As shown in fig. 8, a second lattice inducing layer 121B is formed on a side of the first sub-piezoelectric layer 12A facing away from the substrate 10, a temperature compensating layer 120 is formed on a side of the second lattice inducing layer 121B facing away from the substrate 10, a first lattice inducing layer 121A is formed on a side of the temperature compensating layer 120 facing away from the substrate 10, and a second sub-piezoelectric layer 12B is formed on a side of the first lattice inducing layer 121A facing away from the substrate 10.
The second lattice inducing layer 121B and the first lattice inducing layer 121A may be made of the same material or different materials. Optionally, the material of the second lattice inducing layer 121B is a metal, and the metal is a material that is more matched with the lattice of the piezoelectric layer 12, such as Mo, W, Au, Sc, Al, Pt, or Ti, of course, the invention is not limited thereto, and in other embodiments, the material of the second lattice inducing layer 121B may also be a nonmetal, and details are not repeated herein.
Because the lattice mismatch degrees of the first lattice inducing layer 121A and the second lattice inducing layer 121B with the piezoelectric layer 12 are both smaller than the lattice mismatch degrees of the temperature compensating layer 120 with the piezoelectric layer 12, compared with the temperature compensating layer 120, the lattices of the first lattice inducing layer 121A and the second lattice inducing layer 121B with the piezoelectric layer 12 are more matched, so that the lattice mismatch between the piezoelectric layer 12 and one side of the temperature compensating layer 120 away from the substrate 10 and one side close to the substrate 10 can be improved, the electromechanical coupling coefficient of the piezoelectric layer 12 above and below the temperature compensating layer 120 can be improved, and the performance of the bulk acoustic wave resonator can be improved.
Of course, the invention is not limited thereto, and in other embodiments, a piezoelectric layer is formed on a side of the first electrode facing away from the substrate, and a surface of the piezoelectric layer has a temperature compensation layer and at least one first lattice inducing layer, including:
forming a temperature compensation layer on one side of the first electrode, which is far away from the substrate;
forming at least one first lattice inducing layer on one side of the temperature compensation layer, which is far away from the substrate;
and forming a piezoelectric layer on the side of the at least one first lattice inducing layer, which faces away from the substrate, wherein the piezoelectric layer at least covers the temperature compensation layer and the at least one first lattice inducing layer.
As shown in fig. 9, it is also possible to form the temperature compensation layer 120 on the side of the first electrode 11 away from the substrate 10, form the first lattice inducing layer 121A on the side of the temperature compensation layer 120 away from the substrate 10, and form the piezoelectric layer 12 on the side of the first lattice inducing layer 121A away from the substrate 10, where the surface of the piezoelectric layer 12 on the side close to the substrate 10 has the temperature compensation layer 120 and the first lattice inducing layer 121A.
S104: a second electrode is formed on the side of the piezoelectric layer facing away from the substrate.
As shown in fig. 10 to 12, a second electrode 13 is formed on a side of the piezoelectric layer 12 facing away from the substrate 10. In the embodiment of the present invention, the material of the first electrode 11 and the second electrode 13 is a conductive material. The materials of the first electrode 11 and the second electrode 13 may be the same or different.
As shown in fig. 10 to 12, after the second electrode 13 is formed, the sacrificial layer 102 at the groove 100 is removed, and the acoustic reflection structure 101 is formed at the groove 100, where the acoustic reflection structure 101 is a cavity.
It should be noted that the degree of lattice mismatch, i.e., the degree of lattice mismatch, is a parameter describing the lattice match between two film layers. Lattice mismatch can affect the growth of the film, resulting in a large number of defects in the film, affecting the performance and lifetime of the device. That is, the larger the lattice mismatch, the worse the quality of the grown film layer, and the worse the device performance, and the smaller the lattice mismatch, the better the quality of the grown film layer, and the better the device performance.
When judging whether the two film layers are lattice mismatched, the judgment can be made from three aspects: firstly, judging whether the crystal faces of the two film layers are matched, such as (0001)hex//(0001)hexThen the two regular triangles are lattice matched; II, judging whether the crystal orientations of the two film layers are matched, such as
Calculating the mismatching degree delta according to the lattice constant, such as delta ═ alphas-αe)/αeOr, delta ═ αs-αe) As, or δ 2| αs-αe|/(αs+αe). Wherein alpha issIs the lattice constant, alpha, of the underlying film layereIs the lattice constant of the top film layer. Of course, in other embodiments, the lattice mismatch δ may be calculated according to other formulas, which are not described herein again. However, in general, if the degree of lattice mismatch is greater than 25%, the matching ability of the two film layers is completely lost.
Based on this, in some embodiments of the present invention, the lattice mismatch between the lattice-inducing layer and the piezoelectric layer is less than 25%, for example, the lattice mismatch between the first lattice-inducing layer 121A and the piezoelectric layer 12 is less than 25%, and the lattice mismatch between the second lattice-inducing layer 121B and the piezoelectric layer 12 is less than 25%. Further optionally, the lattice mismatch between the lattice-inducing layer and the piezoelectric layer is less than 5%, for example, the lattice mismatch between the first lattice-inducing layer 121A and the piezoelectric layer 12 is less than 5%, and the lattice mismatch between the second lattice-inducing layer 121B and the piezoelectric layer 12 is less than 5%.
In some embodiments of the present invention, the at least one first lattice inducing layer includes a 1 st layer to an nth layer, and the forming the at least one first lattice inducing layer includes:
in a direction in which the substrate 10 is directed to the temperature compensation layer 120, the 1 st to nth first lattice induction layers are sequentially formed, and as shown in fig. 13, the 1 st to 3 rd first lattice induction layers 1211 to 1213 are sequentially formed.
As shown in fig. 13, the lattice mismatch between the i-th first lattice inducing layer and the piezoelectric layer 12 is smaller than that between the i-1-th first lattice inducing layer and the piezoelectric layer 12, and the lattice mismatch between the 3-rd first lattice inducing layer 1213 and the piezoelectric layer 12 is smaller than that between the 2-nd first lattice inducing layer 1212 and the piezoelectric layer 12. That is, the degree of lattice mismatch of the first lattice-inducing layer 121A with the piezoelectric layer 12 gradually decreases in the direction approaching the piezoelectric layer 12. Wherein N is a natural number greater than 1, and i is any natural number between 1 and N.
Of course, the present invention is not limited to this, and in other embodiments, the present invention may further include a 1 st second lattice inducing layer 121B to an nth second lattice inducing layer 121B, a lattice mismatch degree between the i-th second lattice inducing layer and the piezoelectric layer 12 is smaller than a lattice mismatch degree between the i +1 st second lattice inducing layer and the piezoelectric layer 12, as shown in fig. 14, a lattice mismatch degree between the 1 st second lattice inducing layer 1214 and the piezoelectric layer 1215 is smaller than a lattice mismatch degree between the 2 nd second lattice inducing layer 1215 and the piezoelectric layer 12. That is, the lattice mismatch degree of the second lattice-inducing layer 121B with the piezoelectric layer 12 gradually decreases in the direction approaching the piezoelectric layer 12.
Moreover, the lattice mismatch degrees of any one of the first lattice inducing layer 121A and any one of the second lattice inducing layer 121B and the piezoelectric layer 12 are both smaller than the lattice mismatch degrees of the temperature compensating layer 120 and the piezoelectric layer 12, so that the lattice mismatch degree of the entire lattice inducing layer and the piezoelectric layer 12 is smaller than the lattice mismatch degrees of the temperature compensating layer 120 and the piezoelectric layer 12.
In some embodiments of the present invention, as shown in fig. 15, forming the temperature compensation layer includes: forming the temperature compensation layer 120 in a grid-like structure having a plurality of mesh holes 200, although the present invention is not limited thereto, and in other embodiments, as shown in fig. 16, forming the temperature compensation layer includes: a temperature compensation layer including a plurality of sub compensation layers 1200 is formed, and as shown in fig. 17 and 18, the plurality of sub compensation layers 1200 are arranged in an array. As shown in fig. 17, the shape of the sub-compensation layer 1200 is square, or as shown in fig. 18, the shape of the sub-compensation layer 1200 is circular, and of course, the projected shape may also be polygonal, and the like, which is not described herein again.
On the basis of any of the above embodiments, as shown in fig. 19, the forming of the temperature compensation layer includes: the temperature compensation layer 120 is formed with a surface inclined on the side. On this basis, the side surface of the first lattice-inducing layer 121A is also an inclined surface, so that the deposition effect of the thin film of the piezoelectric layer 12 at the boundary between the temperature compensation layer 120 and the piezoelectric layer 12 can be improved.
An embodiment of the present invention provides a bulk acoustic wave resonator, as shown in fig. 20 and 21, where fig. 20 is a schematic top-view structure of the bulk acoustic wave resonator provided in an embodiment of the present invention, and fig. 21 is a schematic cross-sectional structure of the bulk acoustic wave resonator shown in fig. 20 along a cutting line AA', and the bulk acoustic wave resonator includes a substrate 10, a first electrode 11, a piezoelectric layer 12, and a second electrode 13.
Wherein an interior or surface of the substrate 10 is provided with an acoustically reflective structure 101, which acoustically reflective structure 101 comprises a cavity. As shown in fig. 21, the acoustic reflection structure 101 may be located inside the substrate 10, that is, the acoustic reflection structure 101 may be formed by forming a groove inside the substrate 10, but the present invention is not limited thereto, and in other embodiments, a structural layer may be formed on the surface of the substrate, and then the acoustic reflection structure may be formed on the surface of the substrate by forming a groove on the structural layer. Alternatively, the material of the substrate 10 is single crystal silicon, quartz, gallium arsenide, sapphire, or the like.
The first electrode 11 is arranged on the side of the substrate 10 having the acoustic reflection structure 101, and the first electrode 11 at least partially covers the acoustic reflection structure 101. The piezoelectric layer 12 is disposed on a side of the first electrode 11 facing away from the substrate 10, and the piezoelectric layer 12 has a temperature compensation layer 120 and at least one first lattice inducing layer 121A inside or on a surface thereof.
As shown in fig. 21, the temperature compensation layer 120 and the at least one first lattice-inducing layer 121A may be located inside the piezoelectric layer 12, but the present invention is not limited thereto, and in other embodiments, as shown in fig. 12, the temperature compensation layer 120 and the at least one first lattice-inducing layer 121A may also be located on the surface of the piezoelectric layer 12 on the side close to the substrate 10. It should be noted that, whether the temperature compensation layer 120 and the at least one first lattice inducing layer 121A are located inside or on the surface of the piezoelectric layer 12, the first lattice inducing layer 121A is disposed on the side of the temperature compensation layer 120 facing away from the substrate 10.
Moreover, the lattice mismatch between the first lattice-inducing layer 121A and the piezoelectric layer 12 is smaller than the lattice mismatch between the temperature compensation layer 120 and the piezoelectric layer 12. Based on this, compared with the temperature compensation layer 120, the lattice of the first lattice-inducing layer 121A is more matched with the piezoelectric layer 12, so that the lattice mismatch between the piezoelectric layer 12 and the temperature compensation layer 120 can be improved, and further, the electromechanical coupling coefficient of the piezoelectric layer 12 can be increased, and the performance of the bulk acoustic wave resonator can be improved.
Since the piezoelectric layer 12 has a highly uniform crystal orientation, for example, the piezoelectric layer 12 made of aluminum nitride, scandium-doped aluminum nitride, and zinc oxide has a highly uniform 002 crystal orientation, so that the piezoelectric layer 12 has a better electromechanical coupling coefficient, in the embodiment of the present invention, the lattice inducing layer is disposed between the temperature compensation layer 120 and the piezoelectric layer 12, so that the piezoelectric layer 12 has a highly uniform crystal orientation, and further, the piezoelectric layer 12 has a better electromechanical coupling coefficient.
In the embodiment of the present invention, the material of the first electrode 11 and the second electrode 13 is a conductive material. The materials of the first electrode 11 and the second electrode 13 may be the same or different. The material of the piezoelectric layer 12 includes aluminum nitride, doped aluminum nitride, zinc oxide, and the like. The temperature coefficient of frequency of the temperature compensation layer 120 is opposite to that of other film layers of the bulk acoustic wave resonator, such as the piezoelectric layer 12, so that the temperature compensation layer 120 can achieve the temperature compensation effect. Optionally, the material of the temperature compensation layer 120 is polysilicon, borophosphate glass, silicon dioxide, chromium or tellurium oxide, or the like.
In some embodiments of the present invention, the lattice mismatch degree between the first lattice-inducing layer 121A and the piezoelectric layer 12 is smaller than a preset threshold, and the preset threshold may be as small as possible to reduce the lattice mismatch between the piezoelectric layer 12 and the temperature compensation layer 120 as much as possible. Optionally, the preset threshold is 25%, and further optionally, the preset threshold is 5%. Optionally, the material of the first lattice-inducing layer 121A is a metal. When the material of the piezoelectric layer 12 is aluminum nitride, the material of the first lattice-inducing layer 121A is a material such as Mo, W, Au, Sc, Al, Pt, or Ti that is more lattice-matched to the piezoelectric layer 12. Of course, the invention is not limited thereto, and in other embodiments, the material of the first lattice-inducing layer 121A may also be a nonmetal, and will not be described herein again.
In order to ensure that the temperature compensation layer 120 does not affect the piezoelectric effect of the piezoelectric layer 12, in some embodiments of the present invention, the thickness of the temperature compensation layer 120 is in a range of 50 angstroms to 5 microns, the thickness of the first lattice inducing layer 121A is in a range of 50 angstroms to 1 micron, and the uniformity of the temperature compensation layer 120 and the first lattice inducing layer 121A is required to be less than 8%. Further alternatively, the thickness of the temperature compensation layer 120 may range from 10 angstroms to 10 microns, the thickness of the first lattice inducing layer 121A may range from 10 angstroms to 1 micron, and the uniformity of the temperature compensation layer 120 and the first lattice inducing layer 121A is required to be less than 5%.
In order to further reduce the lattice mismatch between the piezoelectric layer 12 and the temperature compensation layer 120, in some embodiments of the invention, as shown in fig. 11, a second lattice inducing layer 121B is further included, the first lattice inducing layer 121A covers a side surface of the temperature compensation layer 120 facing away from the substrate 10 and an adjacent surface thereof, the second lattice inducing layer 121B is located on a side surface of the temperature compensation layer 120 close to the substrate 10, so that the first lattice inducing layer 121A and the second lattice inducing layer 121B wrap the temperature compensation layer 120, and since the lattice mismatch between the second lattice inducing layer 121B and the piezoelectric layer 12 is smaller than that between the temperature compensation layer 120 and the piezoelectric layer 12, the lattice mismatch between the piezoelectric layer 12 on the upper and lower sides of the temperature compensation layer 120 can be further alleviated.
The materials of the first lattice inducing layer 121A and the second lattice inducing layer 121B may be the same or different. Similarly, the material of the first lattice-inducing layer 121A and the second lattice-inducing layer 121B may be metal or nonmetal. When the material of the piezoelectric layer 12 is aluminum nitride, the materials of the first lattice-inducing layer 121A and the second lattice-inducing layer 121B may be materials such as Mo, W, Au, Sc, Al, Pt, or Ti that are closer to the lattice constant of the piezoelectric layer 12.
In some embodiments of the present invention based on any of the above embodiments, as shown in fig. 13, the at least one first lattice inducing layer may include a 1 st first lattice inducing layer to an nth first lattice inducing layer, and only N is equal to 3 in fig. 13.
As shown in fig. 13, the lattice mismatch between the i-th first lattice inducing layer and the piezoelectric layer 12 is smaller than that between the i-1-th first lattice inducing layer and the piezoelectric layer 12, and the lattice mismatch between the 3-rd first lattice inducing layer 1213 and the piezoelectric layer 12 is smaller than that between the 2-nd first lattice inducing layer 1212 and the piezoelectric layer 12. That is, the degree of lattice mismatch of the first lattice-inducing layer 121A with the piezoelectric layer 12 gradually decreases in the direction approaching the piezoelectric layer 12.
Of course, the present invention is not limited thereto, and in other embodiments, the present invention may include a 1 st second lattice inducing layer 121B to an nth second lattice inducing layer 121B, a lattice mismatch degree between the i-th second lattice inducing layer and the piezoelectric layer 12 is smaller than a lattice mismatch degree between the i +1 st second lattice inducing layer and the piezoelectric layer 12, as shown in fig. 14, a lattice mismatch degree between the 1 st second lattice inducing layer 1214 and the piezoelectric layer 1215 is smaller than a lattice mismatch degree between the 2 nd second lattice inducing layer 1215 and the piezoelectric layer 12. That is, the lattice mismatch degree of the second lattice-inducing layer 121B with the piezoelectric layer 12 gradually decreases in the direction approaching the piezoelectric layer 12.
Moreover, the lattice mismatch between the piezoelectric layer 12 and any one of the first lattice inducing layer 121A and any one of the second lattice inducing layer 121B is smaller than the lattice mismatch between the temperature compensating layer 120 and the piezoelectric layer 12, so that the lattice mismatch between the entire lattice inducing layer and the piezoelectric layer 12 is smaller than the lattice mismatch between the temperature compensating layer 120 and the piezoelectric layer 12. Wherein N is a natural number greater than 1, and i is any natural number between 1 and N.
In some embodiments of the present invention, the lattice constants of the first lattice inducing layer from the 1 st layer to the nth layer are between the temperature compensating layer 120 and the piezoelectric layer 12, and the lattice constants of the first lattice inducing layer from the 1 st layer to the nth layer are gradually increased or decreased in the direction in which the temperature compensating layer 120 points to the piezoelectric layer 12, so as to gradually decrease the difference between the lattice constant of the first lattice inducing layer and the lattice constant of the piezoelectric layer 12, i.e., gradually decrease the lattice mismatch between the first lattice inducing layer and the piezoelectric layer 12.
In some embodiments of the present invention, the temperature compensation layer 120 is a continuous, one-piece, planar structure, as shown in fig. 20, however, the present invention is not limited thereto, and in other embodiments, the temperature compensation layer 120 may also be a grid-like structure having a plurality of mesh openings 200, as shown in fig. 15.
In other embodiments, as shown in fig. 16, 17 or 18, the temperature compensation layer 120 includes a plurality of sub-compensation layers 1200, and the plurality of sub-compensation layers 1200 are arranged in an array.
In some embodiments of the present invention, as shown in fig. 19, the side of the temperature compensation layer 120 is an inclined surface facing away from the substrate 10. On this basis, the side surface of the first lattice-inducing layer 121A is also an inclined surface, so that the deposition effect of the thin film of the piezoelectric layer 12 at the boundary between the temperature compensation layer 120 and the piezoelectric layer 12 can be improved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. A method of fabricating a bulk acoustic wave resonator, comprising:
providing a substrate, and forming an acoustic reflection structure in the substrate or on the surface of the substrate;
forming a first electrode on one side of the substrate, the first electrode at least partially covering the acoustic reflection structure;
forming a piezoelectric layer on one side, away from the substrate, of the first electrode, wherein a temperature compensation layer and at least one first lattice induction layer are arranged in or on the piezoelectric layer, the at least one first lattice induction layer is arranged on one side, away from the substrate, of the temperature compensation layer, and the lattice mismatch degree of any first lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer;
a second electrode is formed on a side of the piezoelectric layer facing away from the substrate.
2. The method of claim 1, wherein forming a piezoelectric layer having a temperature compensation layer and at least one first lattice inducing layer therein on a side of the first electrode facing away from the substrate comprises:
forming a first sub-piezoelectric layer on one side of the first electrode, which faces away from the substrate;
forming a temperature compensation layer on one side of the first sub-piezoelectric layer, which faces away from the substrate;
forming at least one first lattice inducing layer on one side of the temperature compensation layer, which faces away from the substrate;
and forming a second sub-piezoelectric layer on the side of the at least one first lattice inducing layer, which faces away from the substrate, wherein the first sub-piezoelectric layer and the second sub-piezoelectric layer form the piezoelectric layer.
3. The method of claim 2, further comprising, before forming a temperature compensation layer on a side of the first sub-piezoelectric layer facing away from the substrate:
and forming a second lattice inducing layer on one side of the first sub-piezoelectric layer, which is away from the substrate, wherein the temperature compensating layer is wrapped by the second lattice inducing layer and the first lattice inducing layer, and the lattice mismatch degree of the second lattice inducing layer and the piezoelectric layer is smaller than that of the temperature compensating layer and the piezoelectric layer.
4. The method of claim 1, wherein forming a piezoelectric layer on a side of the first electrode facing away from the substrate, the piezoelectric layer having a surface with a temperature compensation layer and at least one first lattice inducing layer, comprises:
forming a temperature compensation layer on one side of the first electrode, which is far away from the substrate;
forming at least one first lattice inducing layer on one side of the temperature compensation layer, which faces away from the substrate;
forming a piezoelectric layer on a side of the at least one first lattice inducing layer facing away from the substrate, the piezoelectric layer at least partially covering the temperature compensation layer and the at least one first lattice inducing layer.
5. The method according to any one of claims 1 to 4, wherein the at least one first lattice inducing layer comprises from a 1 st first lattice inducing layer to an Nth first lattice inducing layer, and wherein forming the at least one first lattice inducing layer comprises:
sequentially forming a 1 st layer of first lattice induction layer to an Nth layer of first lattice induction layer in the direction of the substrate pointing to the temperature compensation layer;
wherein the lattice mismatch between the ith first lattice inducing layer and the piezoelectric layer is less than the lattice mismatch between the ith-1 first lattice inducing layer and the piezoelectric layer; wherein N is a natural number greater than 1, and i is any natural number between 1 and N.
6. The method according to any one of claims 1 to 4, wherein forming the temperature compensation layer comprises:
forming a temperature compensation layer having a mesh-like structure with a plurality of meshes;
or forming a temperature compensation layer comprising a plurality of sub compensation layers, wherein the plurality of sub compensation layers are arranged in an array;
and/or forming a temperature compensation layer with a surface with inclined side surfaces.
7. A bulk acoustic wave resonator, comprising:
a substrate, wherein an acoustic reflection structure is arranged inside or on the surface of the substrate;
a first electrode disposed on one side of the substrate, the first electrode at least partially covering the acoustic reflection structure;
the piezoelectric layer is arranged on one side, away from the substrate, of the first electrode, the temperature compensation layer and at least one first lattice induction layer are arranged in or on the piezoelectric layer, the at least one first lattice induction layer is arranged on one side, away from the substrate, of the temperature compensation layer, and the lattice mismatch degree of any first lattice induction layer and the piezoelectric layer is smaller than that of the temperature compensation layer and the piezoelectric layer;
and the second electrode is arranged on one side of the piezoelectric layer, which is far away from the substrate.
8. The bulk acoustic wave resonator according to claim 7, further comprising a second lattice inducing layer, wherein the second lattice inducing layer is located on a side of the temperature compensation layer close to the substrate, the second lattice inducing layer and the first lattice inducing layer wrap the temperature compensation layer, and a lattice mismatch degree of the second lattice inducing layer and the piezoelectric layer is smaller than a lattice mismatch degree of the temperature compensation layer and the piezoelectric layer.
9. The bulk acoustic resonator according to claim 7 or 8, wherein the at least one first lattice inducing layer comprises a 1 st to an nth first lattice inducing layer;
the 1 st layer first lattice induction layer to the Nth layer first lattice induction layer are sequentially arranged in the direction of the substrate pointing to the temperature compensation layer; the lattice mismatch degree of the ith layer of the first lattice induction layer and the piezoelectric layer is smaller than that of the (i-1) th layer of the first lattice induction layer and the piezoelectric layer; wherein N is a natural number greater than 1, and i is any natural number between 1 and N.
10. The bulk acoustic resonator according to claim 7 or 8, wherein the material of the lattice-inducing layer comprises a metal; the metal comprises Mo, W, Au, Sc, Al, Pt and Ti; the material of the temperature compensation layer comprises polycrystalline silicon, boron phosphate glass, silicon dioxide, chromium and tellurium oxide.
11. The bulk acoustic wave resonator according to claim 7 or 8, characterized in that the temperature compensation layer is a grid-like structure having a plurality of meshes;
or the temperature compensation layer comprises a plurality of sub compensation layers which are arranged in an array;
and/or the side surface of the temperature compensation layer is an inclined surface.
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