CN103607178A - Film bulk wave resonator and method for raising quality factor of film bulk wave resonator - Google Patents
Film bulk wave resonator and method for raising quality factor of film bulk wave resonator Download PDFInfo
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Abstract
The invention discloses a film bulk wave resonator and a method for raising the quality factor of the film bulk wave resonator. The film bulk wave resonator comprises a first electrode, a piezoelectric layer arranged on the top of the first electrode, and a second electrode arranged on the top of the piezoelectric layer. At least one gap is left between the second electrode and the first electrode, and the effective area of the film bulk wave resonator is at least partially covered with the gap, wherein the effective area is an area where the first electrode, the second electrode and the piezoelectric layer overlap with each other in the thickness direction. According to the invention, the at least one gap is left between the second electrode and the first electrode of the film bulk wave resonator, transverse mode sound wave leakage and energy loss caused by an electrode material are reduced, the Q value of the film bulk wave resonator is increased, and the Q value is greater than 2000.
Description
Technical field
The present invention relates to resonator field, and especially, relate to a kind of thin film wave resonator and improve the method for its quality factor.
Background technology
At present, utilize the thin film wave resonator that piezoelectric membrane makes at the resonance (being longitudinal resonance) of thickness direction (FBAR, Film Bulk Acoustic Resonator, below can be referred to as resonator) extensive use.At communication field, thin film wave resonator substitutes SAW (Surface Acoustic Wave) resonator and quartz-crystal resonator has become feasible program, the filter being comprised of thin film wave resonator, duplexer can provide more superior filtering characteristic, for example, lower insertion loss, larger power capacities etc., due to these advantages, thin film wave resonator is widely used in mobile phone and other wireless terminal devices.And, because thin film wave resonator can meet that oscillating circuit is stable, the requirement of low-power consumption, low phase noise, thus can also be in pierce circuit applied film body wave resonator.In addition, thin film wave resonator has quality absorption sensitlzing effect, and the film bulk acoustic transducer that the thin film wave resonator of take is senser can be used for the fields such as biology, chemistry, medical diagnosis, environment measuring.
The thin film wave resonator that Figure 1 shows that prior art, comprising: substrate 1, acoustic mirror 5, the first electrode 2, the second electrode 4 and the piezoelectric layer between first and second electrode 3.The first electrode 2 and the second electrode 4 also can be called exciting electrode, and their effect is the mechanical oscillation that causes each layer of resonator.Acoustic mirror 5, for to be embedded in the air chamber in substrate, forms acoustics isolation between the first electrode and substrate.
Q value is an important parameter of resonator, and Q value is gross energy that system stores and the each cycle internal resonator ratio of the energy of loss by all means, computational methods as shown in Equation (1):
Wherein, ω is angular frequency, E
totbe the gross energy that system stores, Δ E is the each cycle internal resonator energy of loss by all means.Q value when in addition, thin film wave resonator is operated in series resonance frequency is designated as Q
s, the Q value while being operated in parallel resonance frequency is designated as Q
p.High Q value shows that resonator energy loss is low, and the filter insertion loss consisting of high Q value resonator is low, roll-offs precipitous, and filter effect is good; The oscillator working stability being formed by high Q value resonator, frequency fluctuation is small, and phase noise is low; The transducer consisting of high Q value resonator has higher detection accuracy.Therefore, improve resonator Q value and (especially make Q
svalue and Q
pvalue is all greater than 2000) be the important goal of resonator design.
From Q value, defined, energy loss determines the size of Q value, the energy loss joint effect Q value of different approaches, as shown in Equation (2):
Wherein, Q
irepresent the Q value that i kind loss approach determines.The main energy loss approach of thin film wave resonator can be divided into three major types: electrical losses, acoustical material loss and sound wave are revealed.Wherein, the electrical losses mainly electrode in resonator structure, wire, test panel constant resistance causes, the Q of electrical losses major effect resonator
s.Acoustical material loss is that material damping causes part mechanical energy change into heat energy and cause because sound wave is when the Propagation.Sound wave is revealed and is referred to that acoustic wave segment can not be limited to, in resonator, cause energy leakage, and acoustic wave segment comprises longitudinal sound wave, transverse sound wave and surface acoustic wave leakage.
When thin film wave resonator is operated in vertical pattern (main mould), can there is transverse mode (spurious mode).The sound wave that transverse mode causes is revealed the principal element of energy loss while being parallel resonance, i.e. the sound wave of transverse mode leakage is less, Q
pbe worth higher.Conventionally by the first electrode, the second electrode and the piezoelectric layer effective coverage that overlapping zone definitions is resonator on thickness direction, as shown in Figure 1, d represents the effective coverage of resonator.The acoustic impedance of definition effective coverage d is Z
s, the acoustic impedance in non-effective region is Z
l, can be obtained by formula (3) the reflection coefficient γ at effective coverage and place, non-effective zone boundary:
The sound wave of transverse mode is propagated to another edge from an edge of resonator.For making the Q of resonator
pit is maximum that value reaches, and the energy overwhelming majority of transverse mode should be reflected back the effective coverage of resonator, and the absolute value of γ should reach maximum as far as possible.From formula (3), resonator effective coverage acoustic impedance Z
swith non-effective region acoustic impedance Z
lmatching degree is not higher, and reflection coefficient γ is larger.
The boundary that Digital ID 6 in Fig. 1 is illustrated in effective coverage and non-effective region is reflected back the sound wave of the parts transversely pattern of effective coverage.Prior art is due to effective coverage acoustic impedance Z
swith non-effective region acoustic impedance Z
lmatching degree is not low, and the sound wave of parts transversely pattern to non-effective region enter substrate, causes Q at resonator effective coverage boundary leakage
pdecline.In Fig. 1, Digital ID 7 represents to resonator boundary leakage and enters the portion of energy of substrate.
In addition, as shown in Figure 1, in prior art, the upper and lower electrode of thin film wave resonator contacts with piezoelectric layer, and sound wave can be propagated in electrode, and electrode material loss also can cause the Q value of resonator to reduce.
For cause the problem of the Q value reduction of resonator in correlation technique due to the energy loss that sound wave is revealed and electrode material causes of transverse mode in thin film wave resonator, effective solution is not yet proposed at present.
Summary of the invention
For cause the problem of the Q value reduction of resonator in correlation technique due to the energy loss that sound wave is revealed and electrode material causes of transverse mode in thin film wave resonator, the present invention proposes a kind of thin film wave resonator and improves the method for its quality factor, can reduce the energy loss that sound wave is revealed and electrode material causes, improve the Q value of thin film wave resonator.
Technical scheme of the present invention is achieved in that
According to an aspect of the present invention, provide a kind of thin film wave resonator.
This thin film wave resonator comprises:
The first electrode;
Piezoelectric layer, is positioned at the first electrode top;
The second electrode, is positioned at piezoelectric layer top;
Wherein, between the second electrode and the first electrode, there is at least one gap, the effective coverage of at least part of cover film body wave resonator in gap, wherein, effective coverage is the region that the first electrode, the second electrode and piezoelectric layer overlap each other on thickness direction.
Alternatively, above-mentioned gap comprises:
The first gap, between the first electrode and piezoelectric layer; And/or
The second gap, between the second electrode and piezoelectric layer.
Wherein, in the horizontal direction, the length that the second electrode exceeds the second gap is less than or equal to 20 μ m, is more than or equal to 0.1 μ m.
Further, in the horizontal direction, the length that the second electrode exceeds the second gap is less than or equal to 5 μ m, is more than or equal to 1 μ m.
In addition, this thin film wave resonator further comprises:
Sound reflecting structure, is positioned at the first electrode below;
At least part of covering sound reflecting structure of the overlapping region of at least one gap and effective coverage.
And the thickness at least one gap is between 1nm to 500nm.
Preferably, the thickness at least one gap is between 10nm to 300nm.
And the thickness of the first electrode is between 1 μ m to 10 μ m.
And the thickness of the second electrode is between 1 μ m to 10 μ m.
Alternatively, the edge shape at least one gap comprise following one of at least:
Inclination or vertical linear, stepped, arcuation.
Further, the filler at least one gap is air.
According to an aspect of the present invention, provide a kind of for improving the method for the quality factor of thin film wave resonator.
The method comprises:
The first electrode is provided;
Above the first electrode, form piezoelectric layer;
Above piezoelectric layer, form the second electrode;
When forming piezoelectric layer and the second electrode, between the second electrode and the first electrode, leave at least one gap, and the effective coverage of at least part of cover film body wave resonator in gap, wherein, effective coverage is the region that the first electrode, the second electrode and piezoelectric layer overlap each other on thickness direction.
Alternatively, between the second electrode and the first electrode, leaving at least one gap comprises:
When forming piezoelectric layer, between the first electrode and piezoelectric layer, leave the first gap; And/or
When forming piezoelectric layer and the second electrode, between the second electrode and piezoelectric layer, leave the second gap.
Wherein, when forming the second electrode, adjust the second electrode, the length that makes the second electrode in the horizontal direction exceed the second gap is less than or equal to 20 μ m, is more than or equal to 0.1 μ m.
Further, when forming the second electrode, adjust the second electrode, make in the horizontal direction, the length that the second electrode exceeds the second gap is less than or equal to 5 μ m, is more than or equal to 1 μ m.
And, when the first electrode being provided and forming piezoelectric layer and the second electrode, adjust the first electrode, piezoelectric layer and/or the second electrode, make the thickness that leaves at least one gap between the first electrode and the second electrode between 1nm to 500nm.
Further, when the first electrode being provided and forming piezoelectric layer and the second electrode, adjust the first electrode, piezoelectric layer and/or the second electrode, make the thickness that leaves at least one gap between the first electrode and the second electrode between 10nm to 300nm.
And, when the first electrode is provided, adjust the thickness of the first electrode, make the thickness of the first electrode between 1 μ m to 10 μ m.
Preferably, when forming the second electrode, adjust the thickness of the second electrode, make the thickness of the second electrode between 1 μ m to 10 μ m.
In addition, the Q value of thin film wave resonator is greater than 2000.
The present invention, by having at least one gap between the second electrode at thin film wave resonator and the first electrode, reduces the energy loss that sound wave is revealed and electrode material causes, and improves the Q value of thin film wave resonator, makes Q value be greater than 2000.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the structure of thin film wave resonator in prior art;
Fig. 2 to Fig. 6 is according to the schematic diagram of the thin film wave resonator of a plurality of embodiment of the present invention;
Fig. 7 A to Fig. 7 I is the flow chart of manufacture thin film wave resonator according to an embodiment of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain, belongs to the scope of protection of the invention.
According to embodiments of the invention, provide a kind of thin film wave resonator.
According to the thin film wave resonator of the embodiment of the present invention, can comprise:
The first electrode;
Piezoelectric layer, is positioned at the first electrode top;
The second electrode, is positioned at piezoelectric layer top;
Wherein, between the second electrode and the first electrode, there is at least one gap, the effective coverage of at least part of cover film body wave resonator in gap, filler in gap is air, wherein, effective coverage is the first electrode, the region that the second electrode and piezoelectric layer overlap each other on thickness direction, embodiments of the invention are introduced the acoustic impedance that effective coverage is adjusted in gap, improve the not matching degree of effective coverage acoustic impedance and non-effective region acoustic impedance, make the energy overwhelming majority of resonator horizontal transmission be reflected back effective coverage, reduce transverse mode sound wave and reveal the energy loss causing, like this, the Q of resonator
pvalue will be greatly improved.
Meanwhile, the existence in gap has avoided sound wave to propagate in electrode to a certain extent, can reduce the spillage of material of the electrode in thin film wave resonator, improves the Q value of thin film wave resonator.
Alternatively, above-mentioned gap can comprise: the first gap, between the first electrode and piezoelectric layer; And/or second gap, between the second electrode and piezoelectric layer.The introducing in gap makes top electrode and/or bottom electrode and the isolation of piezoelectric layer forming section, can reduce to propagate into the energy electrode from piezoelectric layer, make concentration of energy in piezoelectric layer, the spillage of material of electrode does not affect the Q value of resonator substantially, therefore, can improve thin film wave resonator in the Q value at all frequencies place.In addition, technical scheme of the present invention can also avoid the upper and lower electrode of thin film wave resonator in prior art to contact with piezoelectric layer and the problem that causes, because the piezoelectric layer of thin film wave resonator in prior art is grown directly upon on the first electrode, the material of the first electrode and surface topography are very large on the film quality impact of piezoelectric layer.Therefore,, in order to obtain high-quality piezoelectric membrane, the depositional mode of the first electrode, material selection etc. is all restricted.And in the first electrode and piezoelectric layer, introduce major part and the piezoelectric layer isolation that gap makes electrode, and make the growth of piezoelectric layer no longer be subject to the impact of electrode, expanded thin film deposition mode and the material range of choice of piezoelectric layer and the first electrode.
In addition, when the filler in the first gap and/or the second gap is air, and the thickness in gap is greater than sound wave and in gap, propagates four of wavelength/for the moment, can energy mainly be concentrated in piezoelectric layer, and reduce to be coupled to the energy in the first electrode and the second electrode, thereby the spillage of material of electrode does not affect the Q value of resonator substantially, therefore, the Q value of resonator in whole working frequency range can be improved.
Wherein, in the horizontal direction, the length that the second electrode exceeds the second gap can be less than or equal to 20 μ m, is more than or equal to 0.1 μ m.Preferably, in the horizontal direction, the length that the second electrode exceeds the second gap can be less than or equal to 5 μ m, is more than or equal to 1 μ m.
In addition, according to the thin film wave resonator of the embodiment of the present invention, may further include: sound reflecting structure, is positioned at the first electrode below; At least part of covering sound reflecting structure of the overlapping region of at least one gap and effective coverage.
And the thickness at least one gap is between 1nm to 500nm.Preferably, the thickness at least one gap is between 10nm to 300nm.
And the thickness of the first electrode is between 1 μ m to 10 μ m, and/or the thickness of the second electrode is between 1 μ m to 10 μ m.Because electrode is thicker, the stability of interstitial structure is stronger, can avoid the inhomogeneous even electrode of gap thickness and the phenomenon such as piezoelectric layer contacts.
Thin film wave resonator comprises effective coverage and non-effective region.Effective coverage has first sound impedance, and non-effective region has rising tone impedance.The acoustic impedance that the effective coverage that can affect resonator is rationally set of the thickness of the first electrode and the second electrode, the first gap and the thickness in the second gap and the structural parameters such as length of effective coverage in thin film wave resonator.Thereby by structural parameters are rationally set, increase the not matching degree of first sound impedance and rising tone impedance, make the energy overwhelming majority of resonator horizontal transmission be reflected back effective coverage, reduce sound wave and reveal the energy loss causing, improve the Q of resonator
pvalue.
Alternatively, the edge shape at least one gap can comprise following one of at least: tilt or vertical linear, stepped, arcuation.
In actual applications, can technical scheme according to the present invention provide various embodiments.
As shown in Figure 2, according to one embodiment of present invention, provide a kind of thin film wave resonator.
Wherein, the thin film wave resonator shown in Fig. 2 comprises: substrate 1, dielectric layer 2, acoustic mirror 3, the first electrode 5, the first gap 6, piezoelectric layer 7, the second gap 8 and the second electrode 9.
The material that substrate 1 is used comprises the conventional base materials such as silicon (Si), GaAs (GaAs), glass, PDMS.Acoustic mirror 3 is that the cavity structure that forms in the dielectric layer 2 of the upper surface of substrate 1 is (in unshowned embodiment, acoustic mirror 3 can also be the cavity structure that embeds substrate 1 inside, in addition, any other acoustic mirror structure is also applicable to the present invention, for example Bragg reflecting layer).Digital ID 4 in Fig. 2 is the border of acoustic mirror 3 and dielectric layer 2.The first electrode 5 is positioned at dielectric layer 2 and acoustic mirror 3 tops.The first electrode 5 comprises the first terminal part, the second terminal part and the main part between the first terminal part and the second terminal part.Although the first terminal part and the second terminal part all extend on dielectric layer 2 in the present embodiment,, in unshowned embodiment, the first electrode 5 can have at least a terminal part to extend on dielectric layer 2.In addition, the end face bevel shape of the first terminal part and the second terminal part, stepped, vertical configuration or other can be well known to a person skilled in the art to other shapes.
The second electrode 9 is positioned at piezoelectric layer 7 tops, and the second electrode 9 comprises the first terminal part, the second terminal part and the main part between the first terminal part and the second terminal part.Within the projection of the second electrode 9 in the vertical directions is positioned at acoustic mirror 3.The first terminal part of the second electrode 9, the second terminal part contact with piezoelectric layer 7 upper surfaces, and the length of the first terminal part is designated as L1, and the length of the second terminal part is designated as L2, and L1 and L2 are in the horizontal direction, and the second electrode exceeds the length in the second gap.The length L 1 of the first terminal part, the length L 2 of the second terminal part are less than the length of main part, and wherein, L1 and L2 can be less than or equal to respectively 20 μ m, are more than or equal to 0.1 μ m.Preferably, L1 and L2 can be less than or equal to respectively 5 μ m, are more than or equal to 1 μ m.L1 can be identical with L2, also can be different from L2.The material that forms electrode 5,9 can comprise the metals such as gold (Au), platinum (Pt), aluminium (Al), copper (Cu), molybdenum (Mo), tungsten (W).
Main part and piezoelectric layer 7 that the main part of piezoelectric layer 7 and the first electrode 5 form the first gap 6, the second electrodes 9 form the second gap 8.First, second gap 6 and 8 includes the first terminal part, the second terminal part and the main part between first and second terminal part.As shown in Figure 2, within the projection of the first gap 6 in the vertical directions is positioned at acoustic mirror 3.Within the projection of the second gap 8 in the vertical directions is positioned at the first gap 6.The thickness in the first gap 6 is d1, and the thickness in the second gap 8 is d2.The filler in the first gap 6 and the second gap 8 can be air.
The first electrode 5 and piezoelectric layer 7 form the first capacitor C 1, the second electrode 9 by the first gap 6 and piezoelectric layer 7 forms the second capacitor C 2 by the second gap 8.The first capacitor C 1 and the second capacitor C 2 are series relationship with resonator.Regulate the thickness of gap 6 and 8 can change the size of capacitor C 1 and C2, and then change resonator behavior parameter.Thickness d 1 and the d2 in gap are larger, and the first capacitor C 1 and the second capacitor C 2 are less, and the resonance frequency of resonator effective coverage is lower, effective electro-mechanical couple factor
less, and it is less to be coupled to the acoustic wave energy of electrode.When d1 and d2 are greater than 500nm, effective electro-mechanical couple factor
to significantly reduce (for example, being less than 1%), Q value can decline to a great extent, and has a strong impact on resonator and uses.Otherwise, if gap thickness d1 is less than sound wave in the first gap 6 and/or gap thickness d2 is less than sound wave propagates 1/4th of wavelength in the second gap 8, the acoustic wave segment energy in piezoelectric layer 7 can be coupled in the first electrode 5 and the second electrode 9 by the first gap 6 and the second gap 8.The degree that the change of resonance frequency and acoustic wave energy are coupled to electrode is relevant to resonator effective coverage acoustic impedance size.Therefore, by adjusting play thickness d 1 and d2, can change acoustic impedance and the effective electro-mechanical couple factor of resonator effective coverage
according to above consideration, gap thickness d1 and d2 are generally between 1nm to 500nm scope; Consider the factors such as difficulty of processing and yield, preferably, gap thickness d1 and d2 are between 10nm to 300nm scope.Gap thickness d2 can be identical with the size of d1, also can be different.
As shown in Figure 3, according to still another embodiment of the invention, provide a kind of thin film wave resonator, this thin film wave resonator structure forms with embodiment illustrated in fig. 2 identical.Embodiment as shown in Figure 3 and difference embodiment illustrated in fig. 2 are: within the projection of the second gap 8 in the vertical directions is positioned at acoustic mirror 3, and within the projection of the first gap 6 in the vertical directions is positioned at the second gap 8.
As shown in Figure 4, according to still another embodiment of the invention, provide a kind of thin film wave resonator, this thin film wave resonator structure forms with embodiment illustrated in fig. 2 identical.Embodiment as shown in Figure 4 and difference embodiment illustrated in fig. 2 are: the thickness D2 of the thickness D1 of the first electrode 5 and the second electrode 9 is all larger.D1 and D2 can be identical, also can be different.The value of thickness of electrode D1 and D2 is positioned at 1 μ m to 10 μ m scope.Electrode material can comprise metal or their alloys such as copper, tungsten, aluminium, titanium, gold.Can adopt the method growth electrodes such as plating, sputter, evaporation, chemical vapour deposition (CVD).Because electrode is thicker, first, second interstitial structure stability is stronger, is not prone to the inhomogeneous even electrode of gap thickness and the phenomenon such as piezoelectric layer contacts, and the thickness scheme of electrode can be applied in other embodiment in the present invention.
As shown in Figure 5, according to still another embodiment of the invention, provide a kind of thin film wave resonator, this thin film wave resonator structure forms with embodiment illustrated in fig. 2 identical.Embodiment as shown in Figure 5 and difference embodiment illustrated in fig. 2 are: first and second gap 6 of the thin film wave resonator shown in Fig. 5 and 8 is nonaxisymmetric structure.The first terminal part of the first electrode 5 contacts with dielectric layer 2 upper surfaces, and in the vertical direction be projected in the first gap 6 within.The second terminal part in the vertical direction of the first electrode 5 be projected in acoustic mirror 3 within.The first terminal part in the vertical direction of the second electrode 9 be projected in acoustic mirror 3 within, being projected in outside acoustic mirror 3 of the second terminal part in the vertical direction of the second electrode 9.Being projected in outside acoustic mirror 3 of the first terminal part in the vertical direction in the first gap 6, is positioned on dielectric layer 2, the second terminal part in the vertical direction in the first gap 6 be projected in acoustic mirror 3 within.Within the projection of the first terminal part in the vertical direction in the second gap 8 is positioned at acoustic mirror 3, the projection of the second terminal part in the vertical direction in the second gap 8 is positioned at outside acoustic mirror 3.
As shown in Figure 6, according to still another embodiment of the invention, provide a kind of thin film wave resonator, this thin film wave resonator structure forms with embodiment illustrated in fig. 2 identical.Embodiment as shown in Figure 6 and difference embodiment illustrated in fig. 2 are: the first terminal part of the first electrode 5 is on dielectric layer 2, and the second terminal part of the first electrode 5 is the border of acoustic mirror 3 with dielectric layer 2 with 4(border, border 4) substantially overlap.The first terminal part of the second electrode 9, the projection of the second terminal part in the vertical direction overlap substantially with border 4.First and second terminal part in the first gap 6 extends to respectively on dielectric layer 2.The second gap 8 in the vertical directions be projected in acoustic mirror 3 within.
Thin film wave resonator as shown in Fig. 2-Fig. 6 comprises effective coverage A and non-effective region B.Effective coverage A has first sound impedance, and non-effective region B has rising tone impedance.The acoustic impedance of adjusting effective coverage A can increase the not matching degree of first sound impedance and rising tone impedance, makes the energy overwhelming majority of resonator horizontal transmission be reflected back effective coverage A, reduces sound wave and reveals the energy loss causing, improves the Q of resonator
pvalue, makes Q
pvalue is greater than 2000.Can be by the thickness of piezoelectric layer, the thickness of the thickness of the first electrode, the second electrode in adjustment resonator, the thickness in the first gap, the thickness in the second gap and the structural parameters such as length of effective coverage change the acoustic impedance of the effective coverage of resonator.
In addition, filler in the first gap and the second gap is that air and its thickness are greater than sound wave and in gap, propagate four of wavelength/for the moment, can energy mainly be concentrated in piezoelectric layer, and reduce to be coupled to the energy in the first electrode and the second electrode, and the spillage of material of electrode does not affect the Q value of resonator substantially, therefore, the Q value of resonator in whole working frequency range can be improved.
In addition, between the first electrode and piezoelectric layer, there is the first gap, make piezoelectric membrane quality (as crystal orientation and surface roughness etc.) not be subject to the impact of material and the surface topography of the first electrode, thereby greatly reduce technology difficulty, expanded thin film deposition mode and the material range of choice of piezoelectric layer and the first electrode.
According to embodiments of the invention, provide a kind of for improving the method for the quality factor of thin film wave resonator.
According to the method for the embodiment of the present invention, can comprise:
The first electrode is provided;
Above the first electrode, form piezoelectric layer;
Above piezoelectric layer, form the second electrode;
When forming piezoelectric layer and the second electrode, between the second electrode and the first electrode, leave at least one gap, and the effective coverage of at least part of cover film body wave resonator in gap, wherein, effective coverage is the region that the first electrode, the second electrode and piezoelectric layer overlap each other on thickness direction.
Alternatively, between the second electrode and the first electrode, leaving at least one gap can comprise:
When forming piezoelectric layer, between the first electrode and piezoelectric layer, leave the first gap; And/or
When forming piezoelectric layer and the second electrode, between the second electrode and piezoelectric layer, leave the second gap.
Wherein, when forming the second electrode, adjust the second electrode, the length that makes the second electrode in the horizontal direction exceed the second gap is less than or equal to 20 μ m, is more than or equal to 0.1 μ m.
Further, when forming the second electrode, adjust the second electrode, make in the horizontal direction, the length that the second electrode exceeds the second gap is less than or equal to 5 μ m, is more than or equal to 1 μ m.
And, when the first electrode being provided and forming piezoelectric layer and the second electrode, can adjust the first electrode, piezoelectric layer and/or the second electrode, make the thickness that leaves at least one gap between the first electrode and the second electrode between 1nm to 500nm.
Further, when the first electrode being provided and forming piezoelectric layer and the second electrode, can adjust the first electrode, piezoelectric layer and/or the second electrode, make the thickness that leaves at least one gap between the first electrode and the second electrode between 10nm to 300nm.
And, when the first electrode is provided, can adjust the thickness of the first electrode, make the thickness of the first electrode between 1 μ m to 10 μ m.
Preferably, when forming the second electrode, can adjust the thickness of the second electrode, make the thickness of the second electrode between 1 μ m to 10 μ m.
In addition, the Q value of thin film wave resonator is greater than 2000.
According to one embodiment of present invention, provide a kind of process of manufacturing thin film wave resonator.As shown in Fig. 7 A-7I, for for improving the schematic diagram of concrete technology flow process of method of the quality factor of thin film wave resonator.
In the step shown in Fig. 7 A, utilize sputtering technology, chemical vapor deposition method (CVD), physical gas-phase deposition (PVD), spin coating proceeding or other suitable technique deposition of sacrificial layer in substrate 1, the material of sacrifice layer can be silicon dioxide (Silicon Oxide), phosphorosilicate glass (PSG), polysilicon (Polysilicon), germanium (Germanium), metal (as magnesium (Magnesium), aluminium (Aluminum) etc.), polymer (Polymer) etc. or their composition.Utilize suitable technique (for example, photoetching), the profile of sacrifice layer is made to the shape of predetermined acoustic mirror, thereby form acoustic mirror sacrifice layer 10, wherein, Digital ID 4 is the border of acoustic mirror sacrifice layer 10.
In step shown in Fig. 7 B, utilize sputtering technology, chemical vapor deposition method (CVD), physical gas-phase deposition (PVD) or other suitable technique, dielectric layer 2 in acoustic mirror sacrifice layer 10 and substrate 1.
In the step shown in Fig. 7 C, can utilize the technique of chemico-mechanical polishing (CMP) to remove the part of dielectric layer 2 above acoustic mirror sacrifice layer 10, thereby form smooth smooth surface, be beneficial on acoustic mirror sacrifice layer 10 and dielectric layer 2, deposit in subsequent step the first electrode 5.
In the step shown in Fig. 7 D, utilize sputtering technology, chemical vapor deposition method (CVD), physical gas-phase deposition (PVD) or other appropriate process, on sacrifice layer 10 and dielectric layer 2, depositing the first electrode 5, the first electrode materials can comprise: tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminium (Al) or other similar metal materials or their alloy.Need to utilize photoetching and lithographic technique to form the first electrode 5.For example, can utilize dry plasma etch or wet chemical etching technics to process the first electrode 5, thereby form the terminal part with angled end-face.
In the step shown in Fig. 7 E, utilize sputtering technology, chemical vapor deposition method (CVD), physical gas-phase deposition (PVD), spin coating proceeding or other suitable technique deposited sacrificial layer material on the first electrode 5, sacrificial layer material can comprise silicon dioxide (Silicon Oxide), phosphorosilicate glass (PSG), polysilicon (Polysilicon), germanium (Germanium), metal (as magnesium (Magnesium), aluminium (Aluminum) etc.), polymer (Polymer) etc. or their combination.Utilize suitable method (for example, photoetching), the profile of sacrifice layer is made to the shape in the first predetermined gap, thereby form the first sacrifice layer 11.In addition, can utilize the method for chemico-mechanical polishing (CMP) to process the first sacrifice layer 11, make its upper surface obtain good surface roughness, for follow-up piezoelectric layer deposition provides good surface.
In step shown in Fig. 7 F, utilize the techniques such as rf magnetron sputtering to deposit piezoelectric layer 7 above sacrifice layer 11, the first electrode 5 and dielectric layer 2.
In step shown in Fig. 7 G, utilize sputtering technology, chemical vapor deposition method (CVD), physical gas-phase deposition (PVD), spin coating proceeding or other suitable technique deposited sacrificial layer material on piezoelectric layer 7, sacrificial layer material can comprise silicon dioxide (Silicon Oxide), phosphorosilicate glass (PSG), polysilicon (Polysilicon), germanium (Germanium), metal (as magnesium (Magnesium), aluminium (Aluminum) etc.), polymer (Polymer) etc.Utilize suitable method (for example, photoetching), the profile of sacrifice layer is made to the shape in the second predetermined gap, thereby form the second sacrifice layer 12.
In step shown in Fig. 7 H, utilization utilizes sputtering technology, chemical vapor deposition method (CVD), physical gas-phase deposition (PVD) or other appropriate process, the material that deposits the second electrode 9, the second electrodes 9 above the second sacrifice layer 12 and piezoelectric layer 7 can comprise: tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminium (Al) or other similar metal materials or their combination.Need to utilize photoetching and lithographic technique to form the second electrode 9.
In step shown in Fig. 7 I, thereby utilize etching solution or etching gas to remove each sacrifice layer, form air gap, form acoustic mirror 3, the first gap 6 and the second gap 8.The first sacrifice layer, the second sacrifice layer and acoustic mirror sacrifice layer can be used same or different sacrificial layer material, thereby utilize different etching solutions or etching gas to remove step by step sacrifice layer.
The first gap and the second gap also can adopt the method outside sacrifice layer to form.When being subject to dynamic excitation (radiation, heating etc.) when resonator, there are chemical reactions in structure 11 and the first electrode 5, causes structure 11 volume-diminished, forms the first gap 6.The second gap 8 also can adopt identical method to realize.It is the requirement below 100nm that this technique can meet gap thickness.
In sum, by means of technique scheme of the present invention, the present invention is by leaving at least one gap between the second electrode at thin film wave resonator and the first electrode, avoid to a certain extent sound wave to propagate in electrode, can reduce the energy loss that sound wave is revealed and electrode material causes of transverse mode, improve the Q value of thin film wave resonator.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (20)
1. a thin film wave resonator, is characterized in that, comprising:
The first electrode;
Piezoelectric layer, is positioned at described the first electrode top;
The second electrode, is positioned at described piezoelectric layer top;
Wherein, between described the second electrode and described the first electrode, there is at least one gap, the effective coverage of the described thin film wave resonator of at least part of covering in described gap, wherein, described effective coverage is the region that described the first electrode, described the second electrode and described piezoelectric layer overlap each other on thickness direction.
2. thin film wave resonator according to claim 1, is characterized in that, described gap comprises:
The first gap, between described the first electrode and described piezoelectric layer; And/or
The second gap, between described the second electrode and described piezoelectric layer.
3. thin film wave resonator according to claim 2, is characterized in that, in the horizontal direction, the length that described the second electrode exceeds described the second gap is less than or equal to 20 μ m, is more than or equal to 0.1 μ m.
4. thin film wave resonator according to claim 2, is characterized in that, in the horizontal direction, the length that described the second electrode exceeds described the second gap is less than or equal to 5 μ m, is more than or equal to 1 μ m.
5. thin film wave resonator according to claim 1, is characterized in that, further comprises:
Sound reflecting structure, is positioned at described the first electrode below;
The described sound reflecting structure of at least part of covering of the overlapping region of described at least one gap and described effective coverage.
6. according to arbitrary described thin film wave resonator in claim 1-5, it is characterized in that, the thickness in described at least one gap is between 1nm to 500nm.
7. according to arbitrary described thin film wave resonator in claim 1-5, it is characterized in that, the thickness in described at least one gap is between 10nm to 300nm.
8. according to the thin film wave resonator described in claim 1,2 or 5, it is characterized in that, the thickness of described the first electrode is between 1 μ m to 10 μ m.
9. according to the thin film wave resonator described in any one in claim 1-4, it is characterized in that, the thickness of described the second electrode is between 1 μ m to 10 μ m.
10. according to arbitrary described thin film wave resonator in claim 1-5, it is characterized in that, the edge shape in described at least one gap comprise following one of at least:
Inclination or vertical linear, stepped, arcuation.
11. according to arbitrary described thin film wave resonator in claim 1-5, it is characterized in that, the filler in described at least one gap is air.
12. 1 kinds of methods that improve the quality factor of thin film wave resonator, is characterized in that, comprising:
The first electrode is provided;
Above described the first electrode, form piezoelectric layer;
Above described piezoelectric layer, form the second electrode;
When forming described piezoelectric layer and described the second electrode, between described the second electrode and described the first electrode, leave at least one gap, and the effective coverage of the described thin film wave resonator of at least part of covering in described gap, wherein, described effective coverage is the region that described the first electrode, described the second electrode and described piezoelectric layer overlap each other on thickness direction.
13. methods according to claim 12, is characterized in that, leave at least one gap and comprise between described the second electrode and described the first electrode:
When forming described piezoelectric layer, between described the first electrode and described piezoelectric layer, leave the first gap; And/or
When forming described piezoelectric layer and described the second electrode, between described the second electrode and described piezoelectric layer, leave the second gap.
14. methods according to claim 13, is characterized in that, when forming described the second electrode, adjust described the second electrode, and the length that makes the above second electrode in the horizontal direction exceed described the second gap is less than or equal to 20 μ m, is more than or equal to 0.1 μ m.
15. methods according to claim 13, is characterized in that, when forming described the second electrode, adjust described the second electrode, make in the horizontal direction, and the length that described the second electrode exceeds described the second gap is less than or equal to 5 μ m, is more than or equal to 1 μ m.
16. according to the method described in claim 12 or 13, it is characterized in that, described the first electrode is provided and form described piezoelectric layer and described the second electrode in, adjust described the first electrode, described piezoelectric layer and/or described the second electrode, make the thickness that leaves described at least one gap between described the first electrode and described the second electrode between 1nm to 500nm.
17. according to the method thin film wave resonator described in claim 12 or 13, it is characterized in that, described the first electrode is provided and form described piezoelectric layer and described the second electrode in, adjust described the first electrode, described piezoelectric layer and/or described the second electrode, make the thickness that leaves described at least one gap between described the first electrode and described the second electrode between 10nm to 300nm.
18. methods according to claim 12, is characterized in that, when described the first electrode is provided, adjust the thickness of described the first electrode, make the thickness of described the first electrode between 1 μ m to 10 μ m.
19. according to the method described in claim 12-15, it is characterized in that, when forming described the second electrode, adjusts the thickness of described the second electrode, makes the thickness of described the second electrode between 1 μ m to 10 μ m.
20. according to the method described in any one in claim 12-18, it is characterized in that, the Q value of described thin film wave resonator is greater than 2000.
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