CN108173531A - A kind of hybrid acoustic resonator of bulk acoustic wave resonator and SAW resonator - Google Patents
A kind of hybrid acoustic resonator of bulk acoustic wave resonator and SAW resonator Download PDFInfo
- Publication number
- CN108173531A CN108173531A CN201810127937.3A CN201810127937A CN108173531A CN 108173531 A CN108173531 A CN 108173531A CN 201810127937 A CN201810127937 A CN 201810127937A CN 108173531 A CN108173531 A CN 108173531A
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- resonator
- acoustic wave
- substrate
- bulk acoustic
- saw
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- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims description 16
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 claims description 10
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 10
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The present invention provides the hybrid acoustic resonator of a kind of bulk acoustic wave resonator and SAW resonator, including substrate, hearth electrode, piezoelectric layer and the top electrode set gradually from down to up, the first reflecting layer is formed between substrate and hearth electrode, so as to form bulk acoustic wave resonator；Interdigital electrode is formed on same piezoelectric layer, the second reflecting layer is formed between substrate and piezoelectric layer, so as to form SAW resonator.The present invention passes through integrated process, the top electrode of bulk acoustic wave resonator and the interdigital electrode of SAW resonator are formed directly on same piezoelectric layer, reduce technological process, avoid the piezoelectric substrate occurred in former technique rupture or serious warping phenomenon, it simultaneously can be by adjusting the parameter of SAW resonator, the effect of reaching the transversal parasitic membrane state for inhibiting bulk acoustic wave resonator and inhibit sound wave frequency multiplication.
Description
Technical field
The invention belongs to resonator fields, and in particular to a kind of bulk acoustic wave resonator and SAW resonator it is hybrid
Acoustic resonator.
Background technology
With the evolution of communication frequency band, required frequency is higher and higher, and under high-frequency demand, resonator needs
The loss of wave filter could be reduced by providing better Q values, obtain the higher-quality filter response of a tool.
The various integration thin film bulk acoustic wave resonator for inhibiting lateral parasitic mode mode numerous, traditional（Abbreviation BAW）With
SAW resonator（Abbreviation SAW）Technique, using acoustic substrate as the piezoelectric layer of BAW device, integrate SAW device in phase
With in substrate, but often because of technique high temperature degree environment, cause piezoelectric substrate (such as：LiTaO3) rupture or serious warpage
Phenomenon.
Invention content
The technical problem to be solved by the present invention is to：The hybrid of a kind of bulk acoustic wave resonator and SAW resonator is provided
Acoustic resonator（Hybrid Acoustic Wave Resonator, HAW Resonator）, the integration of technique is realized, is kept away
Exempt from the piezoelectric substrate occurred in former technique rupture or serious warping phenomenon, while can be by adjusting the ginseng of SAW resonator
Number, the effect of reaching the transversal parasitic membrane state for inhibiting bulk acoustic wave resonator and inhibit sound wave frequency multiplication.
The technical solution taken by the invention to solve the above technical problem is：A kind of bulk acoustic wave resonator and surface acoustic wave
The hybrid acoustic resonator of resonator, it is characterised in that：It includes：The substrate that sets gradually from down to up, hearth electrode, piezoelectricity
Layer and top electrode, form the first reflecting layer, so as to form bulk acoustic wave resonator between substrate and hearth electrode；On same piezoelectric layer
Interdigital electrode is formed, the second reflecting layer is formed between substrate and piezoelectric layer, so as to form SAW resonator.
By said program, first reflecting layer etches the air of hole formation for the air chamber of protrusion, in substrate
Chamber overlaps the Bragg mirror formed by high acoustic resistance and low sound-resistance material.
By said program, second reflecting layer etches the air of hole formation for the air chamber of protrusion, in substrate
Chamber overlaps the Bragg mirror formed by high acoustic resistance and low sound-resistance material.
By said program, in the SAW resonator, piezoelectric layer is directly formed in substrate；The hearth electrode
It exists only in the bulk acoustic wave resonator.
By said program, the piezoelectric layer is the material with piezoelectric property.
By said program, the material with piezoelectric property is AlN, AlScN, ZnO, PZT, BST, LiNO3、
LiTaO3In one kind.
Beneficial effects of the present invention are：By integrated process, bulk acoustic wave resonator is formed directly on same piezoelectric layer
The interdigital electrode of top electrode and SAW resonator, reduces technological process, and the piezoelectric substrate occurred in former technique is avoided to break
It splits or serious warping phenomenon, while can reach by adjusting the parameter of SAW resonator and inhibit bulk acoustic wave resonator
The effect of transversal parasitic membrane state and inhibition sound wave frequency multiplication.
Description of the drawings
Fig. 1 is the structure diagram of the embodiment of the present invention one.
Fig. 2 is the structure diagram of the embodiment of the present invention two.
Fig. 3 is the structure diagram of the embodiment of the present invention three.
In figure：101- top electrodes, 102- piezoelectric layers, 103- hearth electrodes, the first air chambers of 1041-, the second air of 1042-
Chamber, 105- substrates, 106- interdigital electrodes；201- top electrodes, 202- piezoelectric layers, 203- hearth electrodes, the first air chambers of 2041-,
The second air chambers of 2042-, 205- substrates, 206- interdigital electrodes；301- top electrodes, 302- piezoelectric layers, 303- hearth electrodes, 305- bases
Bottom, 306- interdigital electrodes, 307- Bragg mirrors.
Specific embodiment
With reference to specific example and attached drawing, the present invention will be further described.
Embodiment one：
The present embodiment provides a kind of bulk acoustic wave resonator and the hybrid acoustic resonator of SAW resonator, as shown in Figure 1,
It includes：Substrate 105, hearth electrode 103, piezoelectric layer 102 and the top electrode 101 set gradually from down to up, substrate 105 and bottom electricity
The first air chamber 1041 is formed between pole 103, so as to form bulk acoustic wave resonator；Interdigital electricity is formed on same piezoelectric layer 102
Pole 106 forms the second air chamber 1042, so as to form SAW resonator between substrate 105 and piezoelectric layer 102.Interdigital electricity
Pole 106 is as there is the electrode of periodic patterns in the face of finger-like or pectination.
First air chamber 1041 and the second air chamber 1042 is the air chamber of protrusion or different reflections
The combination at interface.
Preferably, in the SAW resonator, piezoelectric layer 102 is directly formed in substrate 105；The bottom electricity
Pole 103 is existed only in the bulk acoustic wave resonator.
The piezoelectric layer 102 can be made of the material with piezoelectric property, such as：AlN、AlScN、ZnO、PZT、
BST、LiNO3、LiTaO3Deng；Or it mixes and to form the material with piezoelectric property.
Embodiment two：
The present embodiment provides a kind of bulk acoustic wave resonator and the hybrid acoustic resonator of SAW resonator, as shown in Fig. 2,
It includes：Substrate 205, hearth electrode 203, piezoelectric layer 202 and the top electrode 201 set gradually from down to up, substrate 205 and bottom electricity
The first air chamber 2041 is formed between pole 203, so as to form bulk acoustic wave resonator；Interdigital electricity is formed on same piezoelectric layer 202
Pole 206 forms the second air chamber 2042, so as to form SAW resonator between substrate 205 and piezoelectric layer 202.Interdigital electricity
Pole 206 is as there is the electrode of periodic patterns in the face of finger-like or pectination.
First air chamber 2041 and the second air chamber 2042 is the air chamber that hole formation is etched in substrate,
It can also be the combination of different reflecting interfaces.
Preferably, in the SAW resonator, piezoelectric layer 202 is directly formed in substrate 205；The bottom electricity
Pole 203 is existed only in the bulk acoustic wave resonator.
The piezoelectric layer 202 can be made of the material with piezoelectric property, such as：AlN、AlScN、ZnO、PZT、
BST、LiNO3、LiTaO3Deng；Or it mixes and to form the material with piezoelectric property.
Embodiment three：
The present embodiment provides a kind of bulk acoustic wave resonator and the hybrid acoustic resonator of SAW resonator, as shown in figure 3,
It includes：Substrate 305, hearth electrode 303, piezoelectric layer 302 and the top electrode 301 set gradually from down to up, substrate 305 and bottom electricity
It is formed between pole 303 and the Bragg mirror 307 formed is overlapped by high acoustic resistance and low sound-resistance material, so as to form bulk acoustic resonance
Device；Interdigital electrode 306 is formed on same piezoelectric layer 302, so as to form SAW resonator.Interdigital electrode 306 is as referred to
There is the electrode of periodic patterns in the face of shape or pectination.
In the present embodiment, the first reflecting layer and the second reflecting layer can combine together, i.e., only need one by high acoustic resistance with
Low sound-resistance material overlaps the combination of the Bragg mirror 307 to be formed or different reflecting interfaces.
The piezoelectric layer 302 can be made of the material with piezoelectric property, such as：AlN、AlScN、ZnO、PZT、
BST、LiNO3、LiTaO3Deng；Or it mixes and to form the material with piezoelectric property.
Preferably, in the SAW resonator, piezoelectric layer 302 is directly formed on Bragg mirror 307；Institute
The hearth electrode 303 stated is existed only in the bulk acoustic wave resonator.
Above example is merely to illustrate the design philosophy and feature of the present invention, and its object is to make technology in the art
Personnel can understand present disclosure and implement according to this, and protection scope of the present invention is not limited to the above embodiments.So it is all according to
The equivalent variations made according to disclosed principle, mentality of designing or modification, within protection scope of the present invention.
Claims (6)
1. a kind of hybrid acoustic resonator of bulk acoustic wave resonator and SAW resonator, it is characterised in that：It includes：By
Under to substrate, hearth electrode, piezoelectric layer and the top electrode above set gradually, the first reflecting layer is formed between substrate and hearth electrode, from
And form bulk acoustic wave resonator；Interdigital electrode is formed on same piezoelectric layer, the second reflecting layer is formed between substrate and piezoelectric layer,
So as to form SAW resonator.
2. the hybrid acoustic resonator of bulk acoustic wave resonator according to claim 1 and SAW resonator, special
Sign is：First reflecting layer etches the air chamber of hole formation for the air chamber of protrusion, in substrate or by high acoustic resistance
The Bragg mirror to be formed is overlapped with low sound-resistance material.
3. the hybrid acoustic resonator of bulk acoustic wave resonator according to claim 1 and SAW resonator, special
Sign is：Second reflecting layer etches the air chamber of hole formation for the air chamber of protrusion, in substrate or by high acoustic resistance
The Bragg mirror to be formed is overlapped with low sound-resistance material.
4. the hybrid acoustic resonator of bulk acoustic wave resonator according to claim 1 and SAW resonator, special
Sign is：In the SAW resonator, piezoelectric layer is directly formed in substrate；The hearth electrode exists only in described
Bulk acoustic wave resonator in.
5. the hybrid sound of bulk acoustic wave resonator as claimed in any of claims 1 to 4 and SAW resonator
Wave resonator, it is characterised in that：The piezoelectric layer is the material with piezoelectric property.
6. the hybrid acoustic resonator of bulk acoustic wave resonator according to claim 5 and SAW resonator, special
Sign is：The material with piezoelectric property is AlN, AlScN, ZnO, PZT, BST, LiNO3、LiTaO3In one kind.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810127937.3A CN108173531A (en) | 2018-02-08 | 2018-02-08 | A kind of hybrid acoustic resonator of bulk acoustic wave resonator and SAW resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810127937.3A CN108173531A (en) | 2018-02-08 | 2018-02-08 | A kind of hybrid acoustic resonator of bulk acoustic wave resonator and SAW resonator |
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| Publication Number | Publication Date |
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| CN108173531A true CN108173531A (en) | 2018-06-15 |
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| CN201810127937.3A Pending CN108173531A (en) | 2018-02-08 | 2018-02-08 | A kind of hybrid acoustic resonator of bulk acoustic wave resonator and SAW resonator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109167128A (en) * | 2018-08-20 | 2019-01-08 | 武汉衍熙微器件有限公司 | A kind of method and its filter improving performance of filter |
| CN109257027A (en) * | 2018-10-30 | 2019-01-22 | 开元通信技术（厦门）有限公司 | A kind of mixing acoustic resonator and preparation method thereof |
| CN111669144A (en) * | 2020-05-06 | 2020-09-15 | 河源市众拓光电科技有限公司 | BAW bulk acoustic wave resonator, preparation method thereof and filter |
| CN111817679A (en) * | 2020-06-09 | 2020-10-23 | 杭州见闻录科技有限公司 | Film bulk acoustic resonator and manufacturing process thereof |
| CN114389561A (en) * | 2021-12-21 | 2022-04-22 | 无锡市好达电子股份有限公司 | Mixed structure acoustic wave device |
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