CN111355463A - Device for adjusting effective electromechanical coupling coefficient based on cavity size - Google Patents

Device for adjusting effective electromechanical coupling coefficient based on cavity size Download PDF

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CN111355463A
CN111355463A CN201811558489.9A CN201811558489A CN111355463A CN 111355463 A CN111355463 A CN 111355463A CN 201811558489 A CN201811558489 A CN 201811558489A CN 111355463 A CN111355463 A CN 111355463A
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resonator
cavity
electromechanical coupling
height
piezoelectric layer
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杨清瑞
庞慰
张孟伦
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/644—Coupled resonator filters having two acoustic tracks
    • H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled

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  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Means for adjusting the effective electromechanical coupling coefficient based on the cavity size. The invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode disposed over the substrate; a top electrode; and a piezoelectric layer disposed over the bottom electrode and between the bottom electrode and the top electrode, wherein: a first cavity is arranged between the bottom electrode and the piezoelectric layer, and/or a second cavity is arranged between the piezoelectric layer and the top electrode, wherein the first cavity has a first width and a first height, the second cavity has a second width and a second height, and the overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer, the top electrode, and the first and/or second cavity in the thickness direction of the resonator constitutes the effective area of the resonator. The effective electromechanical coupling coefficient can be adjusted by adjusting the height and/or width of the cavity. The invention also relates to a filter, at least one resonator of which is the resonator and the effective electromechanical coupling coefficient is different from the effective electromechanical coupling coefficients of other resonators. The invention also relates to an electronic device comprising the resonator or the filter.

Description

Device for adjusting effective electromechanical coupling coefficient based on cavity size
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the filter or the resonator.
Background
The bulk acoustic wave filter has the advantages of low insertion loss, high rectangular coefficient, high power capacity and the like, so the bulk acoustic wave filter is widely applied to a modern wireless communication system and is an important component for determining the quality of a radio frequency signal entering and exiting the communication system.
The performance of a bulk acoustic wave filter is determined by the bulk acoustic wave resonators that make up it, such as: the resonant frequency of the bulk acoustic wave resonator determines the operating frequency of the filter, the effective electromechanical coupling coefficient
Figure BDA0001912625500000011
Determines the bandwidth and roll-off of the filter and the quality factor determines the filter insertion loss. In times of increasingly stringent band resources, high quality filters are often required to have large bandwidths or high roll-off, or both, with the bandwidth and roll-off being provided by a single resonator
Figure BDA0001912625500000012
Of determined, but resonant type
Figure BDA0001912625500000013
Is determined by its stack thickness, and all resonators are typically identical within the entire silicon wafer
Figure BDA0001912625500000014
How to implement resonators
Figure BDA0001912625500000015
The on-chip adjustability in a certain range is an important problem which needs to be solved urgently in the design of a high-performance filter.
Disclosure of Invention
The present invention has been made to solve at least one of the above-mentioned problems occurring in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including: a substrate; a bottom electrode disposed over the substrate; a top electrode; and a piezoelectric layer disposed over the bottom electrode and between the bottom electrode and the top electrode, wherein: at least one of the upper and lower sides of the piezoelectric layer is formed with a cavity having a corresponding width and height, the cavity forming part of the active area of the resonator.
Optionally, the cavities include only a first cavity disposed between the bottom electrode and the piezoelectric layer, the first cavity having a first width and a first height; and the overlapping area of the first cavity, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator.
Optionally, the cavities include a first cavity disposed between the bottom electrode and the piezoelectric layer and a second cavity disposed between the piezoelectric layer and the top electrode; the first cavity has a first width and a first height, and the second cavity has a second width and a second height; and the overlapping area of the first cavity, the second cavity, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator. Further optionally, a projection of the second cavity in the thickness direction of the resonator falls within the area of the first cavity.
Optionally, the resonator further comprises an acoustic mirror; the cavities include only a second cavity disposed between the piezoelectric layer and the top electrode, the second cavity having a second width and a second height; and the overlapping area of the acoustic mirror, the second cavity, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator. Further optionally, a projection of the second cavity in the thickness direction of the resonator falls within the area of the acoustic mirror.
According to a further aspect of the embodiments of the present invention, there is provided a method for adjusting an effective electromechanical coupling coefficient of the bulk acoustic wave resonator, including the steps of: adjusting the effective electromechanical coupling coefficient by adjusting the height and/or width of the cavity.
Optionally, the effective electromechanical coupling coefficient is reduced by increasing the height.
Optionally, the effective electromechanical coupling coefficient is increased by decreasing the height.
According to still another aspect of embodiments of the present invention, there is provided a filter including: a series branch including a plurality of series resonators; and a plurality of parallel branches, each parallel branch including at least one parallel resonator, wherein: the effective electromechanical coupling coefficient of at least one resonator in the at least one parallel resonator and the plurality of series resonators is different from the effective electromechanical coupling coefficients of the other resonators, and the at least one resonator is the bulk acoustic wave resonator.
Embodiments of the invention also relate to an electronic device comprising a filter or resonator as described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1 is a schematic diagram of an equivalent circuit of a filter (for example, 4 th order) in the prior art;
figure 2 is a top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view taken along line 1A-1A in FIG. 2 with both sides of the piezoelectric layer provided with an upper air layer and a lower air layer in accordance with one exemplary embodiment;
FIG. 4 is a schematic cross-sectional view of a bulk acoustic wave resonator taken along line 1A-1A in FIG. 2, with only an upper air layer, according to an alternative exemplary embodiment;
FIG. 5 is a schematic cross-sectional view of a bulk acoustic wave resonator taken along line 1A-1A in FIG. 2, with only a lower air layer, according to an alternative exemplary embodiment;
FIG. 6 is an equivalent electromechanical model of region A in FIG. 3;
FIG. 7 is a simplified equivalent electromechanical model of region A in FIG. 3;
fig. 8 is an mbbd model of the bulk acoustic wave resonator S1;
fig. 9 is a simulation curve of the insertion loss frequency characteristic of Band7Tx of the filter in fig. 1, in which curves showing different effective electromechanical coupling coefficients of resonators and curves showing the same effective electromechanical coupling coefficients of resonators are shown;
fig. 10 is a simulation curve of the insertion loss frequency characteristic of Band7Rx of the filter in fig. 1, in which curves showing different effective electromechanical coupling coefficients of resonators and curves showing the same effective electromechanical coupling coefficients of resonators are shown;
fig. 11 shows roll-off curves of filters having different effective electromechanical coupling coefficients of resonators and filters having the same effective electromechanical coupling coefficient of resonators.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
FIG. 1 is a schematic diagram of an equivalent circuit of a 4 th order filter, wherein S1, S2, S3 and S4 are series resonators with effective electromechanical coupling coefficients of
Figure BDA0001912625500000031
Wherein P1, P2, P3 and P4 are parallel resonators
Figure BDA0001912625500000032
Has a value of
Figure BDA0001912625500000033
Fig. 2 is a plan view of the bulk acoustic wave resonator S1, which includes both an upper air layer and a lower air layer. The bulk acoustic wave resonator includes a bottom electrode 102, a bottom air layer 109, a piezoelectric layer 103, an upper air layer 107, and a top electrode 104.
Fig. 3 is a cross-sectional view taken along top view 1A-1A of fig. 2. The bulk acoustic wave resonator includes a bottom electrode 102, a lower air layer 109 (corresponding to the first cavity), a piezoelectric layer 103, an upper air layer 107 (corresponding to the second cavity), and a top electrode 104. The bottom electrode 102 is deposited on a high-resistance silicon substrate, and the edge of the bottom electrode 102 may be etched to be a bevel, and the edge of the bottom electrode 102 may be stepped, vertical, or other similar structures. The area shown as a2 in the figure is the active area of the resonator, containing the top electrode 104, the upper air layer 107, the piezoelectric layer 103, the lower air layer 109, the bottom electrode 102 and the high-resistance silicon substrate; the length of the lower air layer 109 is a1, and the height is d 1; the upper air layer 107 has a length a2 and a height d 2. In fig. 3, a indicates the region of the top electrode.
The equivalent electromechanical model of the region A in FIG. 3 is shown in FIG. 6, where Cair_TAIs the capacitance of the upper air layer 107, Cair_BAIs the capacitance of the lower air layer 109, CpIs the capacitance of the piezoelectric layer 103. Total air capacitor C directly used for series connection of upper air capacitor and lower air capacitorairThus, the equivalent electromechanical model of the region A shown in FIG. 3 can also be illustrated by FIG. 7. The equivalent electromechanical model of the area a in fig. 4 and 5 can also be illustrated by fig. 7.
Figure BDA0001912625500000041
The BVD model of the bulk acoustic wave resonator S1 is shown in fig. 8, and the resonator impedance Z is:
Figure BDA0001912625500000042
if Z is equal to 0, the series resonance frequency can be calculated as:
Figure BDA0001912625500000043
if it is
Figure BDA0001912625500000044
Equal to 0, the parallel resonance frequency can be calculated as:
Figure BDA0001912625500000045
the formula I shows that: if other parameters of the resonator are fixed, the air capacitance decreases as the height d1 or d2 of the upper air layer 107 and the lower air layer 109 increases.
The formula three shows that: if the air capacitance is reduced, ω'sWill increase; the formula four shows that: parallel resonance frequency of ω'pThe air capacitor is not influenced and always kept unchanged. Thus, of a resonator
Figure BDA0001912625500000046
It will be reduced.
For each resonator in fig. 1, each resonator can be adjusted by adjusting its d1 or d2
Figure BDA0001912625500000047
Thereby realizing difference for different resonators
Figure BDA0001912625500000048
Compare all resonators
Figure BDA0001912625500000049
All of the same filter design, such
Figure BDA00019126255000000410
Tunable filters can achieve better passband performance.
With the goal of realizing Band7 (frequency Band 7) Tx performance, the fourth-order filter shown in fig. 1 is optimized in a simulation manner, and when the effective electromechanical coupling coefficients of the series resonators are controlled to be 6.5%, 6.0%, 6.5%, and 6.5%, the areas are: 6.01k (where k denotes 1000 μm square, the same applies hereinafter), 6k, 6.5k, 6.5 k; controlling the effective electromechanical coupling coefficients of the parallel resonators to be respectively: 6.5%, 6.1%, 5.8%, area: 6k, 10.7k, 12.3k, 7.7k, the bandwidth is wider than if all resonators had the same effective electromechanical coupling coefficient of 6.12%, as shown in fig. 9. To the maximum
Figure BDA0001912625500000051
(6.5%) as original
Figure BDA0001912625500000052
Form a
Figure BDA0001912625500000053
The gap height of the upper and lower electrodes required to be 6.0% is all 320A, resulting in
Figure BDA0001912625500000054
The required gap height of the upper and lower electrodes is 480A for 5.8%.
In another embodiment, filter optimization is performed in the Band7 (Band 7) Rx Band requirement when series resonators are separately controlled
Figure BDA0001912625500000055
6.0%, 6.5%, area: 6k, 8.7k, 6.4k, 6.6k, for controlling parallel resonators
Figure BDA0001912625500000056
Respectively as follows: 6.5%, area: 6.5k, 9.5k, 7.7k, 14k, the roll-off is better than that of all resonators
Figure BDA0001912625500000057
Both of the designs are 6.5%, and at the same time, the bandwidth of the filter is unchanged, as shown in fig. 10 and 11. To the maximum
Figure BDA0001912625500000058
(6.5%) as original
Figure BDA0001912625500000059
For a resonator with an area of 6k, form
Figure BDA00019126255000000510
The gap height of the upper and lower electrodes required for 6% was 320A.
Based on the above, the invention provides a method for realizing effective electromechanical coupling coefficient of an on-chip filter
Figure BDA00019126255000000511
Tunable bulk acoustic wave resonant structures. An upper air layer structure is provided between the resonator top electrode 104 and the piezoelectric layer 103, or a lower air layer structure is provided between the piezoelectric layer 103 and the bottom electrode 102, or both the upper air layer structure and the lower air layer structure are processed. The width and height of the air layer structure can change the equivalent capacitance of the resonator, and if the height of the air layer is only increased, the equivalent capacitance of the resonator can be changed
Figure BDA00019126255000000512
Reduce to realize the effective electromechanical coupling coefficient of the filter
Figure BDA00019126255000000513
And the tunable filter is adjustable, and can realize better passband performance.
Accordingly, referring to fig. 4, the bulk acoustic wave resonator shown in fig. 4 includes:
a substrate 100;
an acoustic mirror 101;
a bottom electrode 102 disposed over the substrate;
a top electrode 104; and
a piezoelectric layer 103 disposed above the bottom electrode and between the bottom electrode and the top electrode,
wherein:
a second cavity (upper air layer) 107 is disposed between the piezoelectric layer and the top electrode, wherein the second cavity has a second width a2 and a second height d 2; and is
The overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer, the top electrode, and the second cavity in the thickness direction of the resonator constitutes an effective area a2 of the resonator.
Optionally, a projection of the second cavity 107 in the thickness direction of the resonator falls within the area of the acoustic mirror 101.
Accordingly, referring to fig. 5, the present invention also provides a bulk acoustic wave resonator, comprising:
a substrate;
a bottom electrode 102 disposed over the substrate;
a top electrode 104;
a piezoelectric layer 103 disposed above the bottom electrode and between the bottom electrode and the top electrode; and
a first cavity 109 disposed between the bottom electrode and the piezoelectric layer,
wherein:
the overlapping area of the first cavity, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area A of the resonator;
the first cavity 109 has a first width a1 and a first height d 1.
Correspondingly, the invention provides a method for adjusting the effective electromechanical coupling coefficient of the bulk acoustic wave resonator, which comprises the following steps: adjusting the effective electromechanical coupling coefficient by adjusting the height and/or width of the cavity. For example, the effective electromechanical coupling coefficient may be reduced by increasing the height. As another example, the effective electromechanical coupling coefficient may be increased by decreasing the height.
It is to be specifically noted that the "width" herein means a first width and/or a second width in the case where the first width and the second width exist, and the width in the case where there is only one width; the "height" herein means a first height and/or a second height in the case where there are the first height and the second height, and is the height in the case where there is only one height.
Accordingly, the present invention provides a filter, comprising: a series branch including a plurality of series resonators; a plurality of parallel branches, each parallel branch including a parallel resonator, wherein: the effective electromechanical coupling coefficient of at least one resonator in the parallel resonator and the plurality of series resonators is different from the effective electromechanical coupling coefficients of the other resonators, and the at least one resonator is the bulk acoustic wave resonator.
Further, at least two resonators of the parallel resonator and the plurality of series resonators may be the resonators described above, and the at least two resonators have different effective electromechanical coupling coefficients from each other based on the difference in the width and/or the height.
The following is an exemplary brief description of the materials of the components of the bulk acoustic wave resonator according to the invention.
In the present invention, the electrode constituent material may be formed of gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium Tungsten (TiW), aluminum (Al), titanium (Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), germanium (Ge), copper (Cu), aluminum (Al), chromium (Cr), arsenic-doped gold, and the like.
In the present invention, the piezoelectric layer material may be aluminum nitride (AlN), doped aluminum nitride (doped AlN) zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), Quartz (Quartz), potassium niobate (KNbO3), or lithium tantalate (LiTaO3), wherein the doped AlN contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), and the like.
In the present invention, the substrate materials include, but are not limited to: single crystal silicon (Si), gallium arsenide (GaAs), sapphire, quartz, and the like.
Embodiments of the invention also relate to an electronic device comprising a filter or resonator as described above. It should be noted that the electronic device herein includes, but is not limited to, intermediate products such as a radio frequency front end and a filtering and amplifying module, and terminal products such as a mobile phone, WIFI, and an unmanned aerial vehicle.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

Claims (11)

1. A bulk acoustic wave resonator comprising:
a substrate;
a bottom electrode disposed over the substrate;
a top electrode; and
a piezoelectric layer disposed above the bottom electrode and between the bottom electrode and the top electrode,
wherein:
at least one of the upper and lower sides of the piezoelectric layer is formed with a cavity having a corresponding width and height, the cavity forming part of the active area of the resonator.
2. The resonator of claim 1, wherein:
the cavities include only a first cavity disposed between the bottom electrode and the piezoelectric layer, the first cavity having a first width and a first height; and is
The overlapping area of the first cavity, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator.
3. The resonator of claim 1, wherein:
the cavities include a first cavity disposed between the bottom electrode and the piezoelectric layer and a second cavity disposed between the piezoelectric layer and the top electrode;
the first cavity has a first width and a first height, and the second cavity has a second width and a second height; and is
The overlapping area of the first cavity, the second cavity, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator.
4. The resonator of claim 1, wherein:
the resonator further comprises an acoustic mirror;
the cavities include only a second cavity disposed between the piezoelectric layer and the top electrode, the second cavity having a second width and a second height; and is
The overlapping area of the acoustic mirror, the second cavity, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator.
5. The resonator of claim 1, wherein:
the effective electromechanical coupling coefficient of the resonator is smaller than that of the resonator corresponding to the non-cavity structures on the upper side and the lower side of the piezoelectric layer.
6. A method of adjusting the effective electromechanical coupling coefficient of the bulk acoustic wave resonator according to any of claims 1-5, comprising the steps of:
adjusting the effective electromechanical coupling coefficient by adjusting the height and/or width of the cavity.
7. The method of claim 6, wherein:
the effective electromechanical coupling coefficient is reduced by increasing the height.
8. The method of claim 7, wherein:
increasing the effective electromechanical coupling coefficient by decreasing the height.
9. A filter, comprising:
a series branch including a plurality of series resonators;
a plurality of parallel branches, each parallel branch including at least one parallel resonator,
wherein:
the effective electromechanical coupling coefficient of at least one resonator of the parallel resonator and the plurality of series resonators is different from the effective electromechanical coupling coefficients of the other resonators, the at least one resonator being the bulk acoustic wave resonator according to any one of claims 1-5.
10. The filter of claim 9, wherein:
at least two resonators of the parallel resonator and the plurality of series resonators are resonators according to any of claims 1-5 and have different effective electromechanical coupling coefficients from each other based on the difference in the width and/or the height.
11. An electronic device comprising a filter according to claim 9 or 10 or a bulk acoustic wave resonator according to any of claims 1-6.
CN201811558489.9A 2018-12-20 2018-12-20 Device for adjusting effective electromechanical coupling coefficient based on cavity size Pending CN111355463A (en)

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CN113726307A (en) * 2021-08-18 2021-11-30 武汉大学 Ultra-high frequency resonator with adjustable effective electromechanical coupling coefficient
WO2022028401A1 (en) * 2020-08-06 2022-02-10 诺思(天津)微系统有限责任公司 Bulk acoustic resonator assembly having acoustic decoupling layer and manufacturing method, filter, and electronic device
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WO2022152178A1 (en) * 2021-01-13 2022-07-21 诺思(天津)微系统有限责任公司 Filter, multiplexer, and electronic device
CN114894229A (en) * 2022-04-26 2022-08-12 武汉敏声新技术有限公司 Film bulk acoustic wave sensor and preparation method thereof

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CN103607178A (en) * 2013-09-17 2014-02-26 诺思（天津）微系统有限公司 Film bulk wave resonator and method for raising quality factor of film bulk wave resonator
US20160164487A1 (en) * 2014-12-05 2016-06-09 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave filter

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CN101908865A (en) * 2010-08-20 2010-12-08 庞慰 Body wave resonator and processing method thereof
CN103607178A (en) * 2013-09-17 2014-02-26 诺思（天津）微系统有限公司 Film bulk wave resonator and method for raising quality factor of film bulk wave resonator
US20160164487A1 (en) * 2014-12-05 2016-06-09 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave filter

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Publication number Priority date Publication date Assignee Title
WO2022028401A1 (en) * 2020-08-06 2022-02-10 诺思(天津)微系统有限责任公司 Bulk acoustic resonator assembly having acoustic decoupling layer and manufacturing method, filter, and electronic device
WO2022148387A1 (en) * 2021-01-07 2022-07-14 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator and manufacturing method therefor, filter, and electronic device
WO2022152178A1 (en) * 2021-01-13 2022-07-21 诺思(天津)微系统有限责任公司 Filter, multiplexer, and electronic device
CN113726307A (en) * 2021-08-18 2021-11-30 武汉大学 Ultra-high frequency resonator with adjustable effective electromechanical coupling coefficient
CN113726307B (en) * 2021-08-18 2024-01-23 武汉敏声新技术有限公司 Ultrahigh frequency resonator with adjustable effective electromechanical coupling coefficient
CN114894229A (en) * 2022-04-26 2022-08-12 武汉敏声新技术有限公司 Film bulk acoustic wave sensor and preparation method thereof
CN114894229B (en) * 2022-04-26 2024-05-03 武汉敏声新技术有限公司 Film bulk acoustic wave sensor and preparation method thereof

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