CN108173528A - Wave filter - Google Patents
Wave filter Download PDFInfo
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- CN108173528A CN108173528A CN201810103627.8A CN201810103627A CN108173528A CN 108173528 A CN108173528 A CN 108173528A CN 201810103627 A CN201810103627 A CN 201810103627A CN 108173528 A CN108173528 A CN 108173528A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/075—Ladder networks, e.g. electric wave filters
Abstract
The invention discloses a kind of wave filters.The wave filter includes at least one series resonator and at least two parallel resonators, and parallel resonator or series resonator include：Mass-loading layer, wherein, the density of mass-loading layer is adjustable.By the present invention, the resonant frequency that parallel resonator only needs one layer of mass-loading layer that can adjust resonator in wave filter is achieved the effect that.
Description
Technical field
The present invention relates to the communications field, in particular to a kind of wave filter.
Background technology
Duplexer or wave filter are one of important components of handheld mobile communication product.At present, handheld mobile communication
Product is mainly using the duplexer or wave filter made based on piezoelectric material, such as film bulk acoustic duplexer or wave filter.Film
Bulk acoustic wave resonator is the basic unit for forming piezoelectric sound wave wave filter and duplexer, the workspace of thin film bulk acoustic wave resonator
It is made of metallic bottom electrode-piezoelectric film-electrode of metal, device works in thickness vibration mode, working frequency and piezoelectric material
Thickness be inversely proportional.When electric signal is loaded into thin film bulk acoustic wave resonator, the piezoelectric membrane in device is imitated by inverse piezoelectricity
Electric signal should be changed into acoustical signal, acoustic construction shows the acoustical signal of different frequency selectivity, wherein meets in device
The acoustical signal of sound wave total reflection condition will realize resonance in device, and the acoustical signal for being unsatisfactory for condition of resonance will decay,
The acoustical signal attenuation more with resonant acoustic signal frequency phase-difference is faster on frequency spectrum, and such thin film bulk acoustic wave resonator finally just shows
Go out the frequency-selecting effect to electric signal.
Fig. 1 is the trapezium structure wave filter of the prior art being made of resonator.Trapezium structure wave filter by one or
Multiple series resonators and one or more parallel resonators form.As shown in Figure 1, wave filter 100 is by three series resonators
130 and two parallel resonators 110,120 form.
The sectional view of series resonator 130 and two parallel resonators 110,120 has also been drawn in Fig. 1, series resonator
130 include：Substrate 101；The cavity 132 of formation is etched on substrate；First electrode 136；Piezoelectric layer 135；Second electrode 133.
Parallel resonator 110 includes：Substrate 101；The cavity 112 of formation is etched on substrate；First electrode 116；Piezoelectric layer 115；The
Two electrodes 113；First mass-loading layer 114.Because the first mass-loading layer 114 is so that the thickness of resonator second electrode 113
Increase, therefore the resonant frequency of resonator 110 is lower than the resonant frequency of resonator 130.Parallel resonator 120 includes：Substrate
101；The cavity 122 of formation is etched on substrate；First electrode 126；Piezoelectric layer 125；Second electrode 123；First mass loading
Layer 124；Second mass-loading layer 127.Because the second mass-loading layer 127 causes the thickness of resonator first electrode 123 to increase,
Therefore the resonant frequency of resonator 120 is lower than the resonant frequency of resonator 110.
Since the resonant frequency of the parallel resonator of trapezium structure wave filter has to be lower than the resonant frequency of series resonator
A bandpass filter could be formed, therefore one or more layers mass-loading layer is usually introduced in trapezium structure wave filter, however
As soon as often introducing layer mass-loading layer, the processing steps such as additional thin film deposition, photoetching, etching must be increased.Simultaneously as work
The increase of skill step can also influence the performance of wave filter and the acceptance rate of product.
Caused by multilayer mass-loading layer being needed for parallel resonator in the relevant technologies the problem of processing step increase, mesh
It is preceding not yet to propose effective solution.
Invention content
It is a primary object of the present invention to provide a kind of wave filter, multilayer is needed to solve parallel resonator in the relevant technologies
Caused by mass-loading layer the problem of processing step increase.
To achieve these goals, according to an aspect of the invention, there is provided a kind of wave filter, including at least one string
Connection resonator and at least two parallel resonators, the parallel resonator or the series resonator include：Mass-loading layer,
In, the density of the mass-loading layer is adjustable.
Further, the wave filter includes the first parallel resonator and the second parallel resonator, and described second is in parallel humorous
Shake device mass-loading layer density be more than first parallel resonator mass-loading layer density, wherein, the quality
The density of load layer=resonator effective coverage is improved quality load area/resonator effective coverage gross area.
Further, the mass-loading layer is made of the adjustable pattern of pattern density.
Further, the mass-loading layer is made of equidistant striped.
Further, the duty ratio of the striped of second parallel resonator is more than the striped of first parallel resonator
Duty ratio.
Further, the mass-loading layer is made of grid.
Further, the density of the mass-loading layer grid of second parallel resonator is more than first parallel resonance
The density of the mass-loading layer grid of device.
Further, the parallel resonator further includes：First electrode；Piezoelectric layer, the piezoelectric layer are located at described first
Between electrode and second electrode；Second electrode, wherein, the mass-loading layer is located on the second electrode.
Further, the parallel resonator further includes：Substrate；The acoustic reflector of formation is deposited over the substrate.
Further, the parallel resonator further includes：Substrate；The cavity of formation is etched over the substrate.
Further, the series resonator and the parallel resonator are filled for thin film bulk acoustic wave resonator or solid-state
With resonator.
Further, the wave filter further includes：Inductance is connected with the parallel resonator.
In the embodiment of the present application, wave filter includes at least one series resonator and at least two parallel resonators, and
Join resonator or series resonator includes mass-loading layer, the density of mass-loading layer is adjustable, by adjusting mass-loading layer
Density can achieve the effect that adjusting resonant frequency deviates, and having reached resonator only needs one layer of mass-loading layer
The effect of the resonant frequency of resonator in wave filter is adjusted, solving resonator in the prior art needs multilayer mass-loading layer to lead
The problem of processing step increase of cause.
Description of the drawings
The attached drawing for forming the part of the application is used to provide further understanding of the present invention, schematic reality of the invention
Example and its explanation are applied for explaining the present invention, is not constituted improper limitations of the present invention.In the accompanying drawings：
Fig. 1 is a kind of schematic diagram of wave filter according to prior art；
Fig. 2 is the schematic diagram according to a kind of optional wave filter of the embodiment of the present application；
Fig. 3 is the schematic diagram according to a kind of optional wave filter of the embodiment of the present application；
Fig. 4 is the schematic diagram according to a kind of optional wave filter of the embodiment of the present application；
Fig. 5 is the schematic diagram according to a kind of optional wave filter of the embodiment of the present application.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order to which those skilled in the art is made to more fully understand application scheme, below in conjunction in the embodiment of the present application
The technical solution in the embodiment of the present application is clearly and completely described in attached drawing, it is clear that described embodiment is only
The embodiment of the application part, instead of all the embodiments.Based on the embodiment in the application, ordinary skill people
Member's all other embodiments obtained without making creative work should all belong to the model of the application protection
It encloses.
It should be noted that term " first " in the description and claims of this application and above-mentioned attached drawing, "
Two " etc. be the object for distinguishing similar, and specific sequence or precedence are described without being used for.It should be appreciated that it uses in this way
Data can be interchanged in the appropriate case, so as to embodiments herein described herein.In addition, term " comprising " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing series of steps or unit
Process, method, system, product or equipment are not necessarily limited to those steps or unit clearly listed, but may include without clear
It is listing to Chu or for the intrinsic other steps of these processes, method, product or equipment or unit.
An embodiment of the present invention provides a kind of wave filter, which includes at least one series resonator and at least two
Parallel resonator, parallel resonator or series resonator include：Mass-loading layer, wherein, the density of mass-loading layer is adjustable.
In the embodiment of the present application, wave filter includes at least one series resonator and at least two parallel resonators, and
Join resonator or series resonator includes mass-loading layer, the density of mass-loading layer is adjustable, by adjusting mass-loading layer
Density can achieve the effect that adjusting resonant frequency deviates, and having reached resonator only needs one layer of mass-loading layer
The effect of the resonant frequency of resonator in wave filter is adjusted, solving resonator in the prior art needs multilayer mass-loading layer to lead
The problem of processing step increase of cause.
Simultaneously as processing step is reduced, the acceptance rate of performance of filter and product is improved.
Optionally, wave filter includes the first parallel resonator and the second parallel resonator, the quality of the second parallel resonator
The density of load layer is more than the density of the mass-loading layer of the first parallel resonator, wherein, density=resonance of mass-loading layer
Device effective coverage is improved quality the load area/resonator effective coverage gross area=mass loading density.
First parallel resonator and the second parallel resonator are two resonators in parallel.According to mass loading density formula
It is found that the density if necessary to adjust mass-loading layer, then can be improved quality load area by adjusting resonator effective coverage
To realize.
Optionally, mass-loading layer is made of the adjustable pattern of pattern density, such as grid, striped etc..
Optionally, mass-loading layer is made of equidistant striped.It is made of in mass-loading layer equidistant striped
In the case of, the duty ratio of the striped of the second parallel resonator is more than the duty ratio of the striped of the first parallel resonator.Striped accounts for
Empty ratio is bigger, and resonator effective coverage load area of improving quality is bigger, so as to which the density of mass-loading layer is also bigger.
Optionally, mass-loading layer is made of grid.In the case where mass-loading layer is made of grid, second is in parallel humorous
Shake device mass-loading layer grid density be more than the first parallel resonator mass-loading layer grid density.The density of grid
Bigger, resonator effective coverage load area of improving quality is bigger, so as to which the density of mass-loading layer is also bigger.
Mass-loading layer can also be made of the adjustable pattern of other pattern densities other than grid, striped, principle
Identical, details are not described herein.
Fig. 2 is the schematic diagram according to a kind of optional wave filter of the embodiment of the present application.
As shown in Fig. 2, wave filter 200 is made of three series resonators 230 and two parallel resonators 210,220.Its
In, thin film bulk acoustic wave resonator (FBAR), solid-state assembling resonator (SMR) may be used in series resonator and parallel resonator.
In addition, wave filter 200 further includes the inductance of ground connection, wherein, which is connected respectively with parallel resonator 210,220, these
The inductance of ground connection can form transmission zero with parallel resonator 210,220, inhibit so as to improve the stopband of wave filter 200, together
When can also extended filtering device bandwidth.
The sectional view and top view of series resonator 230 and two parallel resonators 210,220 have also been drawn in Fig. 2, are gone here and there
Connection resonator 230 includes：Substrate 201；The cavity 232 of formation is etched on substrate；First electrode 236；Piezoelectric layer 235；Second
Electrode 233.The material of substrate 201 includes but not limited to silicon, glass, sapphire, GaAs etc..The material of first electrode and second electrode
Material includes but not limited to molybdenum, tungsten, aluminium etc..Piezoelectricity layer material includes but not limited to aluminium nitride (AlN), zinc oxide (ZnO), PZT etc.
Material.Parallel resonator 210 includes：Substrate 201；The cavity 212 of formation is etched on substrate；First electrode 216；Piezoelectric layer
215；Second electrode 213；Mass-loading layer 214.Mass-loading layer 214 is made of equidistant striped, and the duty ratio of striped is
D1.Because load layer 214 is so that the thickness of resonator second electrode 213 increases, therefore the resonant frequency of resonator 210 compares resonance
The resonant frequency of device 230 is low.Parallel resonator 220 includes：Substrate 201；The cavity 222 of formation is etched on substrate；First electricity
Pole 226；Piezoelectric layer 225；Second electrode 223；Mass-loading layer 224.Mass-loading layer 224 is made of equidistant striped, item
The duty ratio of line is D2.Because D2>D1, the mass loading density of mass-loading layer 224 are born more than the quality of mass-loading layer 214
Density is carried, therefore the resonant frequency of resonator 220 is lower than the resonant frequency of resonator 210.The present embodiment is born by adjusting quality
The density of carrier layer mass loading can achieve the purpose that adjust parallel resonator frequency shift (FS).The density of mass loading is defined as：
The density of mass-loading layer=mass loading density=resonator effective coverage load area/resonator of improving quality has
Imitate the region gross area.
Fig. 3 is the schematic diagram according to a kind of optional wave filter of the embodiment of the present application.
As shown in figure 3, wave filter 300 is made of three series resonators 330 and two parallel resonators 310,320.Its
In, thin film bulk acoustic wave resonator (FBAR), solid-state assembling resonator (SMR) may be used in series resonator and parallel resonator.
In addition, wave filter 300 further includes the inductance of ground connection, wherein, which is connected respectively with parallel resonator 310,320, these
The inductance of ground connection can form transmission zero with parallel resonator 310,320, inhibit so as to improve the stopband of wave filter 300, together
When can also extended filtering device bandwidth.
The sectional view and top view of series resonator 330 and two parallel resonators 310,320 have also been drawn in Fig. 3, are gone here and there
Connection resonator 330 includes：Substrate 301；The cavity 332 of formation is etched on substrate；First electrode 336；Piezoelectric layer 335；Second
Electrode 333.The material of substrate 301 includes but not limited to silicon, glass, sapphire, GaAs etc..The material of first electrode and second electrode
Material includes but not limited to molybdenum, tungsten, aluminium etc..Piezoelectricity layer material includes but not limited to aluminium nitride (AlN), zinc oxide (ZnO), PZT etc.
Material.Parallel resonator 310 includes：Substrate 301；The cavity 312 of formation is etched on substrate；First electrode 316；Piezoelectric layer
315；Second electrode 313；Mass-loading layer 314.Equidistant square areas is the place of massless load in Fig. 3.Quality is born
The mass loading density of carrier layer 314 is set as A1.Because load layer 314 is so that the thickness of resonator second electrode 313 increases, therefore
The resonant frequency of resonator 310 is lower than the resonant frequency of resonator 330.Parallel resonator 320 includes：Substrate 301；On substrate
Etch the cavity 322 formed；First electrode 326；Piezoelectric layer 325；Second electrode 323；Mass-loading layer 324.In Fig. 3 equidistantly
Square areas be massless load place.The mass loading density of mass-loading layer 324 is set as A2, and A2>A1, quality are born
The mass loading density of carrier layer 324 is more than the mass loading density of mass-loading layer 314, therefore the resonant frequency of resonator 320
Resonant frequency than resonator 310 is low.
Fig. 4 is the schematic diagram according to a kind of optional wave filter of the embodiment of the present application.
As shown in figure 4, wave filter 400 is made of three series resonators 430 and two parallel resonators 410,420.Its
In, thin film bulk acoustic wave resonator (FBAR), solid-state assembling resonator (SMR) may be used in series resonator and parallel resonator.
In addition, wave filter 400 further includes the inductance of ground connection, wherein, which is connected respectively with parallel resonator 410,420, these
The inductance of ground connection can form transmission zero with parallel resonator 410,420, inhibit so as to improve the stopband of wave filter 400, together
When can also extended filtering device bandwidth.
The sectional view and top view of series resonator 430 and two parallel resonators 410,420 have also been drawn in Fig. 4, are gone here and there
Connection resonator 430 includes：Substrate 401；Deposit on substrate the acoustic reflection mirror 439,439 of formation by film 431,432,
433rd, 434,435 composition, wherein 431,433,435 be low acoustic impedance material, such as silica.432nd, 434 be acoustic impedance material
Material, such as tungsten；First electrode 436；Piezoelectric layer 435；Second electrode 433.The material of substrate 401 includes but not limited to silicon, glass, indigo plant
Jewel, GaAs etc..The material of first electrode and second electrode includes but not limited to molybdenum, tungsten, aluminium etc..Piezoelectricity layer material is included but not
It is limited to the materials such as aluminium nitride (AlN), zinc oxide (ZnO), PZT.Parallel resonator 410 includes：Substrate 401；It deposits on substrate
The acoustic reflection mirror 419,419 of formation is made of film 411,412,413,414,415.Wherein 411,413,415 is in a low voice
Impedance material, such as silica.412nd, 414 be high acoustic impedance materials, such as tungsten；First electrode 416；Piezoelectric layer 415；Second electrode
413；Mass-loading layer 414.Equidistant square areas is the place of massless load in Fig. 4.Mass-loading layer 414 is by between grade
Away from striped composition, the duty ratio of striped is D1.Because load layer 414 causes the thickness of resonator second electrode 413 to increase, because
The resonant frequency of this resonator 410 is lower than the resonant frequency of resonator 430.Parallel resonator 420 includes：Substrate 401；In substrate
The acoustic reflection mirror 429,429 that upper deposition is formed is made of film 421,422,423,424,425.Wherein 421,423,425
For low acoustic impedance material, such as silica.422nd, 424 be high acoustic impedance materials, such as tungsten；First electrode 426；Piezoelectric layer 425；The
Two electrodes 423；Mass-loading layer 424.Mass-loading layer 424 is made of equidistant striped, and the duty ratio of striped is D2.Because
D2>D1, the mass loading density of mass-loading layer 424 are more than the mass loading density of mass-loading layer 414, therefore resonator
420 resonant frequency is lower than the resonant frequency of resonator 410.
Fig. 5 is the schematic diagram according to a kind of optional wave filter of the embodiment of the present application.
As shown in figure 5, wave filter 500 is by three series resonators 530,540 and two 510,520 groups of parallel resonators
Into.Wherein, thin film bulk acoustic wave resonator (FBAR), solid-state assembling resonator may be used in series resonator and parallel resonator
(SMR).In addition, wave filter 500 further includes the inductance of ground connection, wherein, which is connected respectively with parallel resonator 510,520
It connects, the inductance of these ground connection can form transmission zero with parallel resonator 510,520, so as to improve the stopband of wave filter 500
Inhibit, at the same can also extended filtering device bandwidth.
The sectional view and top view of series resonator 530,540 and two parallel resonators 510,520 have also been drawn in Fig. 3
In, series resonator 530 includes：Substrate 501；The cavity 532 of formation is etched on substrate；First electrode 536；Piezoelectric layer 535；
Second electrode 533.The material of substrate 501 includes but not limited to silicon, glass, sapphire, GaAs etc..First electrode and second electrode
Material include but not limited to molybdenum, tungsten, aluminium etc..Piezoelectricity layer material include but not limited to aluminium nitride (AlN), zinc oxide (ZnO),
The materials such as PZT.Parallel resonator 510 includes：Substrate 501；The cavity 512 of formation is etched on substrate；First electrode 516；Pressure
Electric layer 515；Second electrode 513；Mass-loading layer 514.Equidistant square areas is the place of massless load in Fig. 5.Matter
The mass loading density of amount load layer 514 is set as A1.Because load layer 514 causes the thickness of resonator second electrode 513 to increase,
Therefore the resonant frequency of resonator 510 is lower than the resonant frequency of resonator 530.Parallel resonator 520 includes：Substrate 501；It is serving as a contrast
The cavity 522 of formation is etched on bottom；First electrode 526；Piezoelectric layer 525；Second electrode 523；Mass-loading layer 524.Fig. 3 is medium
The square areas of spacing is the place of massless load.The mass loading density of mass-loading layer 524 is set as A2, and A2>A1, matter
The mass loading density for measuring load layer 524 is more than the mass loading density of mass-loading layer 514, therefore the resonance of resonator 520
Frequency is lower than the resonant frequency of resonator 510.Series resonator 540 includes：Substrate 501；The cavity of formation is etched on substrate
542；First electrode 546；Piezoelectric layer 545；Second electrode 543；Mass-loading layer 544.The mass loading of mass-loading layer 544 is close
Degree is set as A3.Because load layer 514 is so that the thickness of resonator second electrode 513 increases, therefore the resonant frequency of resonator 540
Resonant frequency than resonator 530 is low.Usually, A2>A1>A3.
The embodiment of the present application is not in the case where introducing additional manufacturing process, by adjusting mass-loading layer mass loading
Density can achieve the purpose that adjust parallel resonator frequency shift (FS), it is only necessary to which one layer of mass-loading layer can be adjusted arbitrarily
The resonant frequency of any resonator in wave filter.And in traditional technical solution, to realize the resonator of several different frequencies
With regard to needing the mass-loading layer of identical quantity.Therefore, wave filter manufacturing process provided by the embodiments of the present application is simpler, cost
It is lower.
It these are only embodiments herein, be not limited to the application.To those skilled in the art,
The application can have various modifications and variations.All any modifications made within spirit herein and principle, equivalent replacement,
Improve etc., it should be included within the scope of claims hereof.
Claims (12)
1. a kind of wave filter, including at least one series resonator and at least two parallel resonators, which is characterized in that it is described simultaneously
Connection resonator or the series resonator include：
Mass-loading layer, wherein, the density of the mass-loading layer is adjustable.
2. wave filter according to claim 1, which is characterized in that the wave filter includes the first parallel resonator and second
Parallel resonator, the density of the mass-loading layer of second parallel resonator are born more than the quality of first parallel resonator
The density of carrier layer, wherein, density=resonator effective coverage of mass-loading layer load area/resonator of improving quality is effective
The region gross area.
3. wave filter according to claim 2, which is characterized in that the mass-loading layer is by the adjustable pattern of pattern density
Composition.
4. wave filter according to claim 3, which is characterized in that the mass-loading layer is made of equidistant striped.
5. wave filter according to claim 4, which is characterized in that the duty ratio of the striped of second parallel resonator is big
In the duty ratio of the striped of first parallel resonator.
6. wave filter according to claim 3, which is characterized in that the mass-loading layer is made of grid.
7. wave filter according to claim 6, which is characterized in that the mass-loading layer grid of second parallel resonator
Density be more than first parallel resonator mass-loading layer grid density.
8. wave filter according to claim 1, which is characterized in that the parallel resonator further includes：
First electrode；
Piezoelectric layer, the piezoelectric layer is between the first electrode and second electrode；
Second electrode, wherein, the mass-loading layer is located on the second electrode.
9. wave filter according to claim 1, which is characterized in that the parallel resonator further includes：
Substrate；
The acoustic reflector of formation is deposited over the substrate.
10. wave filter according to claim 1, which is characterized in that the parallel resonator further includes：
Substrate；
The cavity of formation is etched over the substrate.
11. wave filter according to claim 1, which is characterized in that the series resonator and the parallel resonator are
Thin film bulk acoustic wave resonator or solid-state assembling resonator.
12. wave filter according to claim 1, which is characterized in that the wave filter further includes：
Inductance is connected with the parallel resonator.
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| CN201810103627.8A CN108173528A (en) | 2018-02-01 | 2018-02-01 | Wave filter |
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| CN201810103627.8A CN108173528A (en) | 2018-02-01 | 2018-02-01 | Wave filter |
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| CN109470367A (en) * | 2018-11-12 | 2019-03-15 | 中国科学院长春光学精密机械与物理研究所 | A kind of preparation method of the broadband non-refrigerated infrared detector based on FBAR |
| CN111092605A (en) * | 2019-12-31 | 2020-05-01 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with acoustic interference array, bulk acoustic wave resonator group, filter and electronic equipment |
| CN111147037A (en) * | 2020-01-07 | 2020-05-12 | 诺思(天津)微系统有限责任公司 | Method for adjusting resonator frequency in bulk acoustic wave filter and bulk acoustic wave filter |
| CN111211757A (en) * | 2020-02-05 | 2020-05-29 | 杭州见闻录科技有限公司 | Top electrode structure of bulk acoustic wave resonator and manufacturing process |
| WO2020125214A1 (en) * | 2018-12-18 | 2020-06-25 | 天津大学 | Multi-channel filter and components thereof, and electronic device |
| CN111525905A (en) * | 2020-04-03 | 2020-08-11 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, semiconductor device, mass load manufacturing method, and electronic apparatus |
| CN111934641A (en) * | 2020-07-08 | 2020-11-13 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, frequency adjustment method for bulk acoustic wave resonator, filter, and electronic device |
| CN111934643A (en) * | 2020-07-13 | 2020-11-13 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with mass loads arranged on two sides of piezoelectric layer, filter and electronic equipment |
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Application publication date: 20180615 Assignee: Suzhou zexun Technology Co., Ltd Assignor: Hubei zeaun science and Technology Co., Ltd. Contract record no.: X2019320010013 Denomination of invention: Modularized parallel extended, unified controlled active power filter License type: Common License Record date: 20191226 |