CN111525905B - Bulk acoustic wave resonator, semiconductor device, mass load manufacturing method, and electronic apparatus - Google Patents
Bulk acoustic wave resonator, semiconductor device, mass load manufacturing method, and electronic apparatus Download PDFInfo
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- CN111525905B CN111525905B CN202010259659.4A CN202010259659A CN111525905B CN 111525905 B CN111525905 B CN 111525905B CN 202010259659 A CN202010259659 A CN 202010259659A CN 111525905 B CN111525905 B CN 111525905B
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; a piezoelectric layer disposed between the bottom electrode and the top electrode, wherein: the overlapping area of the acoustic mirror, the bottom electrode, the top electrode and the piezoelectric layer in the thickness direction of the resonator forms an effective area of the resonator; and the upper surface of the resonator is provided with a mass load array in an effective area, the mass load in the mass load array comprises a first material layer and a second material layer which are arranged from bottom to top, and the material of the first material layer is different from that of the second material layer. The invention also relates to a semiconductor device comprising the resonator, a method for manufacturing a mass load for a bulk acoustic wave resonator, and an electronic device comprising the bulk acoustic wave resonator or the semiconductor device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a semiconductor device having the resonator, an electronic apparatus having the resonator or the semiconductor device, and a method of manufacturing a mass load for a bulk acoustic wave resonator.
Background
As the performance requirements of filters and multiplexers become higher, the requirements of product design for the diversity and accuracy of mass loading (massload) become higher.
The known mass loading methods all have their own disadvantages.
The manufacturing method comprises the following steps: multiple mass loadings were obtained by multiple depositions.
The quality load obtained by the method is greatly influenced by the process fluctuation of film deposition, and the consistency and the accuracy between the chips are more and more difficult to meet the requirement of high yield under the high product specification.
The second manufacturing method comprises the following steps: multiple mass loadings are obtained by multiple trimming (trim, bombardment with a particle beam, for example argon, of the target surface).
In contrast to the first method, the method has higher consistency and accuracy between chips, and can meet the requirement of high yield under high product specification. However, this method is complicated in manufacturing process and requires many cycles of testing and trimming before and after the final result is achieved.
The third preparation method comprises the following steps: and the mass loads with different duty ratios are obtained by one-time deposition.
This approach can simplify the process steps of method one and achieve multiple mass loads.
However, the defects of this solution are that the final mass load value is affected by both the fluctuation of the thin film deposition process and the photolithography and etching process, and the uniformity and accuracy between the wafers and the wafer cannot meet the requirement of high yield under high product specification.
Disclosure of Invention
The present invention has been made to mitigate or solve at least one of the above-mentioned problems in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
the overlapping area of the acoustic mirror, the bottom electrode, the top electrode and the piezoelectric layer in the thickness direction of the resonator forms an effective area of the resonator; and is
The mass load array is arranged on the upper surface of the resonator in the effective area, the mass load in the mass load array comprises a first material layer and a second material layer which are arranged from bottom to top, and the material of the first material layer is different from that of the second material layer.
Embodiments of the present invention are also directed to a semiconductor device including: a plurality of bulk acoustic wave resonators including at least one bulk acoustic wave resonator as described above.
Optionally, in the semiconductor device, the plurality of bulk acoustic wave resonators include at least a first resonator and a second resonator, both the first resonator and the second resonator are the bulk acoustic wave resonators, and a mass of a mass load of the first resonator is different from a mass of a mass load of the second resonator.
The invention also relates to a mass load manufacturing method for the bulk acoustic wave resonator, which comprises the following steps:
step s 1: providing a bulk acoustic wave resonator, wherein the upper surface of the bulk acoustic wave resonator is provided with a finishing treatment layer and an initial mass load arranged on the finishing treatment layer; and
step s 2: the initial mass load and the trim handle layer are etched using a trim process to form a bi-layer mass load.
Embodiments of the invention also relate to a filter comprising a bulk acoustic wave resonator or unit as described above and a bulk acoustic wave resonator manufactured according to the method described above.
Embodiments of the present invention also relate to an electronic apparatus including the bulk acoustic wave resonator described above, or the semiconductor device described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
fig. 1 is a schematic top view of a semiconductor device according to an exemplary embodiment of the present invention, showing two bulk acoustic wave resonators, each having a mass load;
fig. 2 is a schematic cross-sectional view of the semiconductor device before trimming (trim) is performed, taken along a-a in fig. 1, wherein the mass loading of the two bulk acoustic wave resonators is a single-layer structure;
fig. 3 is a schematic cross-sectional view of the semiconductor device after trimming is performed, taken along a-a in fig. 1, in which the mass loads of the two bulk acoustic wave resonators are of a double-layer structure;
fig. 4 is a schematic cross-sectional view of a semiconductor device before trimming is performed, for example taken along a-a in fig. 1, wherein the mass loads of the two bulk acoustic wave resonators are of a single layer structure and the trimming process layer includes two layers, according to an exemplary embodiment of the present invention;
fig. 5 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, showing a cross-sectional view of the semiconductor device after trimming has been performed on the basis of fig. 4, wherein the mass loading of the two bulk acoustic wave resonators is a double-layer structure;
fig. 6 is a schematic top view of a semiconductor device according to an exemplary embodiment of the present invention showing two bulk acoustic wave resonators, one having a point-like mass load and the other having a uniform layered mass load;
fig. 7 is a schematic cross-sectional view of the semiconductor device before trimming is performed, taken along a-a in fig. 6, in which the mass load of the bulk acoustic wave resonator is a single-layer structure;
fig. 8 is a schematic cross-sectional view of the semiconductor device after trimming is performed, taken along a-a in fig. 6, wherein the mass load of the bulk acoustic wave resonator is a double-layer structure after trimming is performed on both resonators simultaneously;
fig. 9 is a schematic cross-sectional view exemplarily showing a double-layer mass load formed after trimming is performed in a case where duty ratios of mass loads of two bulk acoustic wave resonators are different, wherein thicknesses of double-layer materials are different in the two resonators;
fig. 10 is a schematic cross-sectional view exemplarily showing a two-layer mass load obtained after trimming is performed by selecting a trimming scheme, in which there is a difference in the shape of the mass load of two resonators.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention. Some, but not all embodiments of the invention are described. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
According to the invention, the mass load structures with different duty ratios corresponding to the resonators with different mass load requirements are obtained by deposition and patterning, so that different mass loads can be manufactured in one step. The material of this mass loading is different from the material of the underlying layer of mass loading.
Then, a plurality of mass loads are subjected to a precise correction process using trimming schemes (trim recipe) having different selection ratios or etch rates for the two materials (the material of the mass load and the material underlying the mass load), thereby improving the mass load accuracy.
In the present invention, trim (trim) is a frequency-modified process that is substantially similar to an etch process except that the trim is etched in, for example, a serpentine path across a wafer (wafer) rather than in a single etch of a wafer. Different amounts of etching or trimming can be applied to different areas of the entire wafer.
The principle of trimming is to reduce the thickness of the film by physical bombardment of particle beams, and the reduction of the thickness of the film can also be realized by physical bombardment and chemical reaction.
As will be described later, in the present invention, the thinning rate or etch rate of two different materials for the same trim scheme can be adjusted by adjusting the chemical gas composition and/or volume ratio.
Fig. 1 is a schematic top view of a semiconductor device according to an exemplary embodiment of the present invention, showing two bulk acoustic wave resonators, each having a mass load; fig. 2 is a schematic cross-sectional view of the semiconductor device before trimming (trim) is performed, taken along a-a in fig. 1, wherein the mass loading of the two bulk acoustic wave resonators is a single-layer structure; fig. 3 is a schematic cross-sectional view of the semiconductor device after trimming is performed, taken along a-a in fig. 1, in which the mass loads of the two bulk acoustic wave resonators are of a double-layer structure.
The structure of a semiconductor device according to the present invention is exemplarily described below with reference to fig. 1 to 3, in which:
101, substrate, selected from Si, quartz, monocrystal AlN and LiNbO3、TaNbO3SiC, GaN, GaAs, PZT, sapphire, diamond, and the like.
102, the acoustic mirror can be a cavity, and a Bragg reflection layer and other equivalent forms can also be adopted.
103: the bottom electrode (electrode pin) is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or an alloy thereof.
104: the piezoelectric layer film or the piezoelectric layer can be made of materials such as aluminum nitride, zinc oxide, PZT and the like and contains rare earth element doped materials with certain atomic ratio of the materials.
105: the top electrode (electrode pin) is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composition of the above metals or the alloy thereof.
106: the passivation layer on the top electrode surface can be AlN or Si3N4，SiO2The dielectric material may be an inert metal material such as gold, silver, copper, or platinum.
107: columnar initial mass loading (before trimming), which may be SiO2，AlN，Si3N4The dielectric material may be an inert metal material such as gold, silver, copper, platinum, etc., but the material of the dielectric material and the material of 106 cannot be the same material.
109: double layer mass loading (after trimming).
As can be seen from fig. 3, the bi-layer mass load 109 comprises a first material layer (layer corresponding to the material of the passivation layer 106) and a second material layer (layer corresponding to the material of the initial mass load 107) arranged from bottom to top, the material of the first material layer being different from the material of the second material layer.
Since the materials of the first material layer and the second material layer are different from each other, different etching rates can be achieved for the first material and the second material in the trimming process.
In the above-described embodiments shown in fig. 1-3, both the first material and the second material are dielectric materials, however, the invention is not limited thereto. For example, the material of the first material layer is a dielectric material, and the material of the second material layer is a metal material; or the material of the first material layer and the material of the second material layer are both metal materials; or the material of the first material layer is a metal material and the material of the second material layer is a dielectric material. The first material and the second material are selected such that different etching rates can be achieved for the first material and the second material during the trimming process.
As shown in fig. 3, the first material layer of the bi-layer mass load 109 is integral with the passivation layer 106, which itself is a protrusion formed by etching the passivation layer 106.
In an alternative embodiment, the thickness of the first material layer is different from the thickness of the second material layer. As can be appreciated, where the mass load 107 and the passivation layer 106 in fig. 2 can be etched at different rates, the thickness of the first material layer can be made different than the thickness of the second material layer based on the thickness of the mass load 107 and the final etch process.
As shown in fig. 3, the double-layered mass load 109 is a columnar mass load. However, the shape of the mass load is not limited thereto. For example, it may have a rectangular cross-section or other cross-section, which may be the shape shown in fig. 9, or the shape shown in fig. 10. For example, in a longitudinal section of the double-layer mass load 109 shown in fig. 9, the outer peripheral surface of the first material layer (corresponding to 106) and the outer peripheral surface of the second material layer (corresponding to 107) are flush with each other, and the outer peripheral surfaces are vertical outer peripheral surfaces; as shown on the left side of fig. 10, in a longitudinal section of the double-layer mass load, the outer peripheral surfaces of the first material layer and the second material layer are also flush with each other, but the outer peripheral surfaces are inclined outer peripheral surfaces.
In the present invention, the formed mass loads 109 may constitute an array of mass loads. It is within the scope of the invention that the array may be, for example, a uniform array of point-like mass loads, or a non-uniform array. The mass-loaded arrays of the two resonators may also be different, as shown in fig. 1.
Fig. 4 is a schematic cross-sectional view of a semiconductor device before trimming is performed, for example, taken along a-a in fig. 1, wherein the mass loads 107 of the two bulk acoustic wave resonators are of a single layer structure and the trimming process layer includes two layers (106 and 108), according to an exemplary embodiment of the present invention. By the trimming process, 107 is removed entirely and a dual layer mass load 109 is formed at both layers 106 and 108, as shown in figure 5.
Fig. 6 is a schematic top view of another semiconductor device according to an exemplary embodiment of the present invention showing two bulk acoustic wave resonators, one (right side in the figure) having a point-like mass load and the other (left side in the figure) having a uniform layered mass load. Fig. 7 is a schematic cross-sectional view of the semiconductor device before trimming is performed, taken along a-a in fig. 6, in which the mass load 107 of the bulk acoustic wave resonator on the right side is of a single-layer structure. Fig. 8 is a schematic cross-sectional view of the semiconductor device after trimming is performed, taken along a-a in fig. 6, in which the mass load 109 of the bulk acoustic wave resonator has a double-layer structure after trimming is performed on both resonators simultaneously.
Fig. 1-3 and 4-5 and 6-8 all show semiconductor devices comprising resonators. The semiconductor device may be a filter which may include series resonators and parallel resonators, and the resonators shown in fig. 1-8 may be series resonators and/or parallel resonators. The semiconductor device may also be a duplexer or a multiplexer.
As shown in fig. 1 to 3 and 4 to 5, in the two resonators shown in each drawing, the duty ratios of the mass loads of the two resonators (in fig. 2, the duty ratios are ratios of a/b) are different from each other, and as shown in fig. 2 and 4, the duty ratio of the resonator on the left side is smaller than that of the resonator on the right side, and further, the duty ratios can be expressed as the ratio of the area of the mass load to the area of the effective region, without being limited to the expression of a/b in the cross-sectional view. In other words, the claimed duty cycle may include both of the above meanings, and is within the scope of the present invention.
Although not shown, in the two bulk acoustic wave resonators of the semiconductor device, the projection height of the mass load of the first resonator may be different from the projection height of the mass load of the second resonator.
Fig. 9 is a schematic cross-sectional view exemplarily showing a double-layer mass load formed after trimming is performed in a case where duty ratios of mass loads of two bulk acoustic wave resonators are different, in which thicknesses of double-layer materials are different in the two resonators.
As shown in fig. 9, the thickness of the first material layer of the mass load of the first resonator (corresponding to 106) is different from the thickness of the first material layer of the mass load of the second resonator; and/or the thickness of the second layer of material of the mass load of the first resonator (corresponding to 107) is different from the thickness of the second layer of material of the mass load of the second resonator.
As shown in fig. 9, the difference in etch rate of the passivation layer 106 for different duty cycles can be amplified by adjusting the trimming scheme. For example, the etch rate of the passivation layer 106 in resonator 1 with a small duty cycle is higher than the etch rate of the passivation layer 106 in resonator 2 with a large duty cycle. The double-layer mass load 109 obtained after trimming in this way also functions to adjust and correct the difference in mass load between the resonators 1 and 2 as shown in fig. 9. Meanwhile, the trimming rate data of different duty ratios are collected and sorted, so that the difference value of the quality load can be controlled more accurately.
Fig. 10 is a schematic cross-sectional view exemplarily illustrating a double-layer mass load obtained after trimming is performed by selecting a trimming scheme. As shown in fig. 10, in a longitudinal section of the semiconductor device, a sectional shape of a corresponding mass load of the first resonator is different from a sectional shape of a corresponding mass load of the second resonator.
As shown in fig. 10, the trimmed double-layer mass load can also be adjusted to obtain a non-rectangular structure by adjusting the trimming scheme, so that the mass changes of the two layers of materials are inconsistent, and thus, the mass of the mass loads of different resonators can be further adjusted by changing the duty ratio, as described in step 5 mentioned later.
In the present invention, in order to make it possible to form different etching rates for the first material and the second material, different etchants may be used in the trimming process. In an alternative embodiment, the etchant may be an etching gas. In an embodiment of the present invention, ion bombardment of the conditioning process uses chemical gas etching. For etching using chemical gases, two etching gases G1 and G2 are used, for example a combination of etching gases, defining that gas G1 is the sensitive etchant for the passivation layer 106 and gas G2 is the sensitive etchant for the material layer 107. Suppose v1 is the etch rate of the passivation layer 106, v2 is the etch rate of the material layer 107, ρ 1 is the density of the passivation layer 106, and ρ 2 is the density of the material layer 107. Sensitive etchant means that it is easier to etch a material, e.g., gas G1 etches the passivation layer 106, i.e., the passivation layer 106 is etched at a greater rate than the material layer 107.
In the present invention, illustratively, the following three trimming schemes may be employed:
scheme A: when v1/v2> ρ 2/ρ 1, then the mass of the newly added portion of the passivation layer 106 is greater than the mass of the portion of the material layer 107 that was etched away, resulting in a final mass load 109 of greater mass than the initial mass load.
Scheme B when v1/v2< p 2/p 1, the mass of the newly added portion of the passivation layer 106 is less than the mass of the portion of the material layer 107 that was etched away, so that the mass of the final mass load 109 is lower than the mass of the initial mass load.
Scheme C: the rate of etching the passivation layer 106 and the initial mass load reaches a balance value at which the mass of the bilayer mass load 109 remains constant relative to the mass of the initial mass load. Specifically, the etching rate ratio of the passivation layer 106 and the material layer 107 is inversely proportional to the density ratio of the two materials, i.e., v1/v2 ═ ρ 2/ρ 1.
In both schemes A, B and C above, different etch rates are achieved by selecting appropriate volume ratios of the etch gases based on the materials of the passivation layer and the material layer.
A mass load fabrication method according to the present invention is illustrated below with reference to fig. 2-3, the method comprising the steps of:
step 1, as shown in fig. 2, an acoustic mirror, a bottom electrode, a piezoelectric layer, a top electrode, a passivation layer, and a mass load 107 (at this time, the resonator frequency is lower than the target frequency) of the bulk acoustic wave resonator are formed, and the mass load layer can realize that different resonators have different mass loads according to different duty ratios (a/b). The mass load 107 may be made by a lift-off process or by a deposition-lithography-etching process.
And 2, performing frequency test before trimming on all the series-parallel resonators.
And 3, trimming the whole wafer to be close to the target frequency by taking the resonator with the maximum mass load as a reference (the aim is to ensure that the whole wafer does not need to be subjected to excessive overall trimming after the step 5 is finished so as to avoid influencing the mass load precision), for example, 5MHz allowance is left. In step 3, the trimming scheme is selected from the aforementioned scheme C.
And 4, carrying out frequency test after trimming on the resonators of different types.
And 5, if the difference value among the mass loads of all the resonators deviates from the expected value or the overall mass load value deviates from the expected value due to process fluctuation (such as photoetching, etching, thin film deposition and the like), adjusting the height c of the mass load 109 by selecting the scheme A or B to adjust the mass of the mass load, and finally adjusting the difference value among the mass loads of the resonators or the overall mass load value to reach the target value.
And 6, measuring after trimming.
If the accuracy requirement is higher, the single trimming amount can be reduced and the trimming can be completed in a plurality of times in a mode of repeating the steps 5 and 6.
And 7, performing final fine trimming on the whole wafer to reach the target frequency.
Fig. 4 and 5 show another embodiment of the semiconductor device of the present invention. The process of making the dual layer mass load is described in detail below with reference to figures 4 and 5.
A particular case exists in the embodiment shown in fig. 1-3 where the initial mass load 107 is completely etched away at step 3 when the overall trim shift frequency is large. In this case, only one passivation layer material is left after step 3, and the function of step 5 cannot be completed by adjusting the etching rate ratio of the two layers of materials. The structure shown in fig. 4 below is therefore proposed. To simplify the process complexity, the structure is added with 108 layers, which are made of the same material as the mass load 107 (or different dielectric materials, but with increased process complexity). Furthermore, the thickness ratio of the passivation layer 106 to the initial mass load 107 is equal to the density ratio of the material used for the initial mass load 107 to the material used for the passivation layer 106. It is to be noted that here, the case of being equal to, or slightly equal to, is also included, for example, the difference in the ratio of the thickness ratio to the density ratio is within a range of 10%. In this case, if the mass load 107 is completely consumed in step 3, the passivation layer 108 will be exposed in the area outside the mass load structure. Therefore, this case still satisfies the condition for completing step 5.
As can be appreciated by those skilled in the art, bulk acoustic wave resonators according to the present invention can be used to form filters.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
the overlapping area of the acoustic mirror, the bottom electrode, the top electrode and the piezoelectric layer in the thickness direction of the resonator forms an effective area of the resonator; and is
The mass load array is arranged on the upper surface of the resonator in the effective area, the mass load in the mass load array comprises a first material layer and a second material layer which are arranged from bottom to top, and the material of the first material layer is different from that of the second material layer.
2. The resonator of claim 1, wherein:
the mass load array is a regular uniform array.
3. The resonator of claim 1, wherein:
the resonator is further provided with a passivation layer, and the first material layer is integrally formed with the passivation layer.
4. The resonator of claim 1, wherein:
the material of the first material layer is a dielectric material, and the material of the second material layer is a metal material; or
The material of the first material layer and the material of the second material layer are both metal materials; or
The material of the first material layer is a metal material and the material of the second material layer is a dielectric material.
5. The resonator of claim 1, wherein:
the thickness of the first material layer is different from the thickness of the second material layer.
6. The resonator of any of claims 1-5, wherein:
the mass load is a columnar mass load.
7. The resonator of claim 6, wherein:
in the mass load, the outer peripheral surface of the first material layer is flush with the outer peripheral surface of the second material layer.
8. The resonator of claim 6, wherein:
in the mass load, the outer periphery of the first material layer is not flush with the outer periphery of the second material layer.
9. A semiconductor device, comprising:
a plurality of bulk acoustic wave resonators including at least one bulk acoustic wave resonator according to any of claims 1-8.
10. The semiconductor device of claim 9, wherein:
the plurality of bulk acoustic wave resonators include at least a first resonator and a second resonator, the first resonator and the second resonator are the bulk acoustic wave resonators according to any one of 1-8, and the mass of the mass load of the first resonator is different from the mass of the mass load of the second resonator.
11. The semiconductor device of claim 10, wherein:
the duty cycle of the mass load of the first resonator is different from the duty cycle of the mass load of the second resonator.
12. The semiconductor device of claim 10, wherein:
the protrusion height of the mass load of the first resonator is different from the protrusion height of the mass load of the second resonator.
13. The semiconductor device of any of claims 10-12, wherein:
the thickness of the first layer of material of the mass load of the first resonator is different from the thickness of the first layer of material of the mass load of the second resonator; and/or
The thickness of the second layer of material of the mass load of the first resonator is different from the thickness of the second layer of material of the mass load of the second resonator.
14. The semiconductor device of any of claims 10-12, wherein:
in a longitudinal cross section of the semiconductor device, a cross sectional shape of a corresponding mass load of the first resonator is different from a cross sectional shape of a corresponding mass load of the second resonator.
15. The semiconductor device of claim 10, wherein:
the semiconductor device is a filter or a multiplexer.
16. A mass loading fabrication method for a bulk acoustic wave resonator, comprising:
step s 1: providing a bulk acoustic wave resonator, wherein the upper surface of the bulk acoustic wave resonator is provided with a finishing treatment layer and an initial mass load arranged on the finishing treatment layer; and
step s 2: the initial mass load and the trim handle layer are etched using a trim process to form a bi-layer mass load.
17. The method of claim 16, wherein:
in step s1, the finishing layer is formed of a first material and the initial mass load is formed of a second material, the first material being different from the second material; and
in step s2, the double layer mass load comprises a first material layer and a second material layer from bottom to top.
18. The method of claim 16, wherein:
in step s1, the finishing treatment layer includes a first finishing layer and a second finishing layer arranged from bottom to top, the first finishing layer is formed of a first material, the second finishing layer is formed of a second material, the initial mass load is formed of the first material (including the first material and a material similar to the first material of the first finishing layer having substantially the same etching rate for the first gas in the finishing process), the initial mass load is formed of the first material, the first material is different from the second material, and a thickness ratio of the second finishing layer to the initial mass load is equal to a density ratio of the first material to the second material; and is
In step s2, the double layer mass load comprises a first material layer and a second material layer from bottom to top.
19. The method of claim 17 or 18, wherein:
the trimming process uses a first etchant suitable for etching the first material and a second etchant suitable for etching the second material.
20. The method of claim 19, wherein:
the first etchant is a first gas and the second etchant is a second gas.
21. The method of 20, wherein:
the first gas etches the first material faster than the second material, and the second gas etches the second material faster than the first material.
22. The method of claim 21, wherein:
the step s2 includes a step s 21: selecting the volume ratio of the first gas to the second gas so that the mass of the double-layer mass load is greater than the mass of the initial mass load in the etching process by utilizing the trimming process; or the volume ratio of the first gas and the second gas is selected such that the mass of the bilayer mass load is less than the mass of the initial mass load during etching using the trim process.
23. The method of claim 22, wherein:
the method further comprises, before step s21, step s 22: the volume ratio of the first gas to the second gas is selected such that the mass of the bilayer mass load is equal to the mass of the initial mass load during etching using the trim process.
24. The method of any one of claims 16-23, wherein:
providing a plurality of bulk acoustic wave resonators on the same substrate, wherein the upper surface of at least one bulk acoustic wave resonator is provided with a trimming treatment layer and an initial mass load arranged on the trimming treatment layer in step s 1; and
in step s2, the initial mass load and the trim treatment layer of the at least one bulk acoustic wave resonator are etched using a trim process to form a dual layer mass load.
25. The method of claim 24, wherein:
in step s1, the upper surface of at least two of the plurality of bulk acoustic wave resonators is provided with a trimming processing layer and an initial mass load provided on the trimming processing layer, the at least two resonators including a first resonator and a second resonator, the mass of the initial mass load of the first resonator being different from the mass of the initial mass load of the second resonator; and is
In step s2, the initial mass load and the trim process layer of the first resonator and the second resonator are simultaneously etched using a trim process to form a dual layer mass load on both the first resonator and the second resonator.
26. The method of claim 25, wherein:
the duty cycle of the mass load of the first resonator is different from the duty cycle of the mass load of the second resonator.
27. The method of claim 25, wherein:
the method further comprises a first measuring step: before step s2, the resonance frequencies of the plurality of bulk acoustic wave resonators are measured.
28. The method of 27, wherein:
the method is the method of 23;
the method further comprises a second measuring step: after step s22, before step s21, the resonance frequencies of the plurality of bulk acoustic wave resonators are measured.
29. The method of claim 28, wherein:
the method further comprises a third measuring step: after step s21, the resonance frequencies of the plurality of bulk acoustic wave resonators are measured.
30. An electronic device comprising the bulk acoustic wave resonator according to any one of claims 1 to 8, or the semiconductor device according to any one of claims 9 to 15.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (29)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
the overlapping area of the acoustic mirror, the bottom electrode, the top electrode and the piezoelectric layer in the thickness direction of the resonator forms an effective area of the resonator; and is
The mass load array is arranged on the upper surface of the resonator in an effective area, the mass load in the mass load array comprises a first material layer and a second material layer which are arranged from bottom to top, and the material of the first material layer is different from that of the second material layer;
the mass load is a columnar mass load, and the outer periphery of the columnar mass load comprises a first outer periphery defined by a first material layer and a second outer periphery defined by a second material layer, the first outer periphery and the second outer periphery collectively defining the outer periphery of the columnar mass load.
2. The resonator of claim 1, wherein:
the mass load array is a regular uniform array.
3. The resonator of claim 1, wherein:
the resonator is further provided with a passivation layer, and the first material layer is integrally formed with the passivation layer.
4. The resonator of claim 1, wherein:
the material of the first material layer is a dielectric material, and the material of the second material layer is a metal material; or
The material of the first material layer and the material of the second material layer are both metal materials; or
The material of the first material layer is a metal material and the material of the second material layer is a dielectric material.
5. The resonator of claim 1, wherein:
the thickness of the first material layer is different from the thickness of the second material layer.
6. The resonator of claim 1, wherein:
in the mass load, the outer peripheral surface of the first material layer is flush with the outer peripheral surface of the second material layer.
7. The resonator of claim 1, wherein:
in the mass load, the outer periphery of the first material layer is not flush with the outer periphery of the second material layer.
8. A semiconductor device, comprising:
a plurality of bulk acoustic wave resonators including at least one bulk acoustic wave resonator according to any one of claims 1-7.
9. The semiconductor device of claim 8, wherein:
the plurality of bulk acoustic wave resonators includes at least a first resonator and a second resonator, both the first resonator and the second resonator being the bulk acoustic wave resonator according to any of claims 1-7, and the mass of the mass load of the first resonator is different from the mass of the mass load of the second resonator.
10. The semiconductor device of claim 9, wherein:
the duty cycle of the mass load of the first resonator is different from the duty cycle of the mass load of the second resonator.
11. The semiconductor device of claim 9, wherein:
the protrusion height of the mass load of the first resonator is different from the protrusion height of the mass load of the second resonator.
12. The semiconductor device of any of claims 9-11, wherein:
the thickness of the first layer of material of the mass load of the first resonator is different from the thickness of the first layer of material of the mass load of the second resonator; and/or
The thickness of the second layer of material of the mass load of the first resonator is different from the thickness of the second layer of material of the mass load of the second resonator.
13. The semiconductor device of any of claims 9-11, wherein:
in a longitudinal cross section of the semiconductor device, a cross sectional shape of a corresponding mass load of the first resonator is different from a cross sectional shape of a corresponding mass load of the second resonator.
14. The semiconductor device of claim 9, wherein:
the semiconductor device is a filter or a multiplexer.
15. A mass loading fabrication method for a bulk acoustic wave resonator, comprising:
step s 1: providing a bulk acoustic wave resonator, wherein the upper surface of the bulk acoustic wave resonator is provided with a finishing treatment layer and an initial mass load arranged on the finishing treatment layer; and
step s 2: etching the initial mass load and the trim finish layer using a trim process to form a dual layer mass load,
wherein:
the initial mass load and the finishing treatment layer are made of different materials;
the mass load is a columnar mass load, the columnar mass load forming an array of mass loads, a perimeter of the columnar mass load including a first perimeter defined by a finishing layer and a second perimeter defined by an initial mass load, the first and second perimeters collectively defining a perimeter of the columnar mass load.
16. The method of claim 15, wherein:
in step s1, the finishing layer is formed of a first material and the initial mass load is formed of a second material, the first material being different from the second material; and
in step s2, the double layer mass load comprises a first material layer and a second material layer from bottom to top.
17. The method of claim 15, wherein:
in step s1, the finishing treatment layer includes a first finishing layer and a second finishing layer arranged from bottom to top, the first finishing layer is formed of a first material, the second finishing layer is formed of a second material, the initial mass load is formed of the first material, the first material is different from the second material, and a thickness ratio of the second finishing layer to the initial mass load is equal to a density ratio of the first material to the second material; and is
In step s2, the double layer mass load comprises a first material layer and a second material layer from bottom to top.
18. The method of claim 16 or 17, wherein:
the trimming process uses a first etchant suitable for etching the first material and a second etchant suitable for etching the second material.
19. The method of claim 18, wherein:
the first etchant is a first gas and the second etchant is a second gas.
20. The method of claim 19, wherein:
the first gas etches the first material faster than the second material, and the second gas etches the second material faster than the first material.
21. The method of claim 20, wherein:
the step s2 includes a step s 21: selecting the volume ratio of the first gas to the second gas so that the mass of the double-layer mass load is greater than the mass of the initial mass load in the etching process by utilizing the trimming process; or the volume ratio of the first gas and the second gas is selected such that the mass of the bilayer mass load is less than the mass of the initial mass load during etching using the trim process.
22. The method of claim 21, wherein:
the method further comprises, before step s21, step s 22: the volume ratio of the first gas to the second gas is selected such that the mass of the bilayer mass load is equal to the mass of the initial mass load during etching using the trim process.
23. The method of claim 15, wherein:
providing a plurality of bulk acoustic wave resonators on the same substrate, wherein the upper surface of at least one bulk acoustic wave resonator is provided with a trimming treatment layer and an initial mass load arranged on the trimming treatment layer in step s 1; and
in step s2, the initial mass load and the trim treatment layer of the at least one bulk acoustic wave resonator are etched using a trim process to form a dual layer mass load.
24. The method of claim 23, wherein:
in step s1, the upper surface of at least two of the plurality of bulk acoustic wave resonators is provided with a trimming processing layer and an initial mass load provided on the trimming processing layer, the at least two resonators including a first resonator and a second resonator, the mass of the initial mass load of the first resonator being different from the mass of the initial mass load of the second resonator; and is
In step s2, the initial mass load and the trim process layer of the first resonator and the second resonator are simultaneously etched using a trim process to form a dual layer mass load on both the first resonator and the second resonator.
25. The method of claim 24, wherein:
the duty cycle of the mass load of the first resonator is different from the duty cycle of the mass load of the second resonator.
26. The method of claim 24, wherein:
the method further comprises a first measuring step: before step s2, the resonance frequencies of the plurality of bulk acoustic wave resonators are measured.
27. The method of claim 26, wherein:
the step s2 includes a step s 21: selecting the volume ratio of the first gas to the second gas so that the mass of the double-layer mass load is greater than the mass of the initial mass load in the etching process by utilizing the trimming process; or selecting the volume ratio of the first gas to the second gas so that the mass of the double-layer mass load is less than the mass of the initial mass load in the etching process by using the trimming process;
the method further comprises, before step s21, step s 22: selecting the volume ratio of the first gas to the second gas so that the mass of the double-layer mass load is equal to the mass of the initial mass load in the etching process by using the trimming process;
the method further comprises a second measuring step: after step s22, before step s21, the resonance frequencies of the plurality of bulk acoustic wave resonators are measured.
28. The method of claim 27, wherein:
the method further comprises a third measuring step: after step s21, the resonance frequencies of the plurality of bulk acoustic wave resonators are measured.
29. An electronic device comprising the bulk acoustic wave resonator according to any one of claims 1 to 7, or the semiconductor device according to any one of claims 8 to 14.
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| CN103701425A (en) * | 2013-10-25 | 2014-04-02 | 诺思（天津）微系统有限公司 | Wave filter and manufacture method thereof |
| CN108173528A (en) * | 2018-02-01 | 2018-06-15 | 湖北宙讯科技有限公司 | Wave filter |
| CN109889178A (en) * | 2018-12-26 | 2019-06-14 | 天津大学 | Bulk acoustic wave resonator |
| CN110944274A (en) * | 2019-11-20 | 2020-03-31 | 武汉大学 | Tunable MEMS piezoelectric transducer with mass load based on Pitton-mode |
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| CN103701425A (en) * | 2013-10-25 | 2014-04-02 | 诺思（天津）微系统有限公司 | Wave filter and manufacture method thereof |
| CN108173528A (en) * | 2018-02-01 | 2018-06-15 | 湖北宙讯科技有限公司 | Wave filter |
| CN109889178A (en) * | 2018-12-26 | 2019-06-14 | 天津大学 | Bulk acoustic wave resonator |
| CN110944274A (en) * | 2019-11-20 | 2020-03-31 | 武汉大学 | Tunable MEMS piezoelectric transducer with mass load based on Pitton-mode |
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