CN108233889A - Resonator - Google Patents
Resonator Download PDFInfo
- Publication number
- CN108233889A CN108233889A CN201810098700.7A CN201810098700A CN108233889A CN 108233889 A CN108233889 A CN 108233889A CN 201810098700 A CN201810098700 A CN 201810098700A CN 108233889 A CN108233889 A CN 108233889A
- Authority
- CN
- China
- Prior art keywords
- electrode
- resonator
- reflecting grating
- substrate
- reflecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 43
- 125000004122 cyclic group Chemical group 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 23
- 239000010409 thin film Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of resonators.The resonator includes：Substrate, first electrode, piezoelectric layer, the second electrode lay, wherein, first electrode on substrate, has sound wave resonance portion between the part and substrate of first electrode；Piezoelectric layer, in first electrode；The second electrode lay, on piezoelectric layer, wherein, the second electrode lay is divided into second electrode and reflecting grating in central area, and the first pre-determined distance is spaced between reflecting grating and second electrode.By the present invention, solve the problems, such as that sound wave is easily to resonator external leakage in the relevant technologies.
Description
Technical field
The present invention relates to electronic communication devices field, in particular to a kind of resonator.
Background technology
Wave filter or duplexer are one of important components of handheld mobile communication product.At present, handheld mobile communication
Product is mainly using the duplexer or wave filter made based on piezoelectric material, such as film bulk acoustic duplexer or wave filter.Film
Bulk acoustic wave resonator is the basic unit for forming piezoelectric sound wave wave filter and duplexer, therefore the product of thin film bulk acoustic wave resonator
Prime factor is directly related to the insertion loss of wave filter and duplexer passband and the roll-off characteristic of wave filter.Piezoelectric sound wave resonance
The quality factor of device are higher, then the wave filter or the insertion loss of duplexer passband being made of it are lower, while possess more precipitous
Roll-off characteristic, and then the service life of extending cell phone battery, while effectively inhibit interference signal.
The workspace of thin film bulk acoustic wave resonator is made of metallic bottom electrode-piezoelectric film-electrode of metal, and device works in
The thickness of thickness vibration mode, working frequency and piezoelectric material is inversely proportional.When electric signal is loaded into thin film bulk acoustic wave resonator
When, electric signal is changed into acoustical signal by the piezoelectric membrane in device by inverse piezoelectric effect, and acoustic construction is to the sound of different frequency
Signal shows selectivity, the acoustical signal of sound wave total reflection condition is wherein met in device, resonance will be realized in device, without
Meeting the acoustical signal of condition of resonance will decay, and decay more with the more acoustical signal of resonant acoustic signal frequency phase-difference on frequency spectrum
Soon, such thin film bulk acoustic wave resonator finally just shows the frequency-selecting effect to electric signal.Although thin film bulk acoustic wave resonator
Main mould is operated in thickness vibration mode, but because the size of resonator is not infinity, in the area that electrode and piezoelectric layer have a common boundary
Domain will appear the discontinuous of acoustic impedance, therefore the sound wave of other patterns can be excited out, and the sound wave of these patterns cannot be fine
Be limited in resonator inside, have acoustic wave segment energy that can be transferred to resonator outside exergy dissipation and consume, so as to make the product of resonator
Prime factor reduces.
Fig. 1 a and Fig. 1 b be illustrated that it is of the prior art it is a kind of enhancing cavity structure thin film bulk acoustic wave resonator quality because
Several methods.As illustrated in figs. 1A and ib, thin film bulk acoustic wave resonator 100 includes substrate 101；The sky of formation is etched on substrate
Chamber 102；First electrode 106；Piezoelectric layer 105；Second electrode 103；In the gasket layer 104 that 103 boundary of second electrode is formed.
The region for the gasket layer 104 that two electrodes, 103 boundary is formed has heavier mass loading compared with other regions, therefore can have
Effect prevents sound wave toward resonator external leakage, so as to improve the quality factor of thin film bulk acoustic wave resonator.
Fig. 2 a and Fig. 2 b are illustrated that another enhancing has acoustic mirror structure film bulk acoustic resonator in the prior art
The method of device quality factor.As shown in Figure 2 a and 2 b, thin film bulk acoustic wave resonator 200 includes substrate 201；It deposits on substrate
The acoustic reflection mirror 220 of formation, acoustic reflection mirror 220 is by film 221, film 222, film 223, film 224, film
225 composition, wherein film 221, film 223, film 225 be low acoustic impedance material, such as silica.Film 222, film 224
For high acoustic impedance materials, such as tungsten；First electrode 202；Piezoelectric layer 205；Second electrode 203.It is formed on 203 boundary of second electrode
Gasket layer 204.There is heavier quality compared with other regions in the region for the gasket layer 204 that 203 boundary of second electrode is formed
Load, therefore can effectively prevent sound wave toward resonator external leakage, so as to improve the quality of thin film bulk acoustic wave resonator because
Number.
Since Fig. 1 a middle washers layer 104 and Fig. 2 a middle washers layer 204 need additional deposition layer of material, also need to simultaneously
Lithography and etching is carried out so as to form the layer pattern, therefore gasket layer needs to introduce additional processing step, increase device manufacture
Complexity.Simultaneously as the mass loading that gasket areas introduces so that the resonant frequency ratio of gasket areas resonator is without washer
The resonant frequency of region resonator is relatively low, is equivalent to for resonator and introduces additional parasitic capacitance, therefore can reduced
The effective electro-mechanical couple factor of resonator, so as to which the bandwidth of wave filter and duplexer can be reduced.
For sound wave in the relevant technologies easily to resonator external leakage the problem of, not yet propose effective solution party at present
Case.
Invention content
It is a primary object of the present invention to provide a kind of resonator, to solve in the relevant technologies sound wave easily outside resonator
The problem of leakage.
To achieve these goals, according to an aspect of the invention, there is provided a kind of resonator.The resonator includes：
Substrate, first electrode, piezoelectric layer, the second electrode lay, wherein, first electrode, on substrate, the part and lining of first electrode
There is sound wave resonance portion between bottom；Piezoelectric layer, in first electrode；The second electrode lay, on piezoelectric layer, wherein, second
Electrode layer is divided into second electrode and reflecting grating in central area, and it is default that first is spaced between reflecting grating and second electrode
Distance.
Further, reflecting grating is cyclic structure, and reflecting grating surrounds second electrode.
Further, the second electrode lay is spaced the second pre-determined distance there are multiple reflecting gratings between two neighboring reflecting grating.
Further, the cyclic structure of reflecting grating has notch.
Further, the second electrode lay is spaced the second pre-determined distance there are multiple reflecting gratings between two neighboring reflecting grating,
And the gap position alignment of each reflecting grating.
Further, second electrode includes multiple reflecting gratings, is spaced the second pre-determined distance between two neighboring reflecting grating, often
The cyclic structure of a reflecting grating includes at least the first notch and the second notch, and the first gap position alignment of each reflecting grating,
The second gap position alignment of each reflecting grating.
Further, substrate has groove, and the part covering groove of first electrode forms cavity, and cavity is humorous as sound wave
Shake portion.
Further, resonator further includes：Acoustic reflector between substrate and first electrode, wherein, acoustics is anti-
Mirror is penetrated as sound wave resonance portion.
Further, acoustic emission mirror includes at least two layers of acoustic impedance material.
Further, at least two layers of acoustic impedance material is alternately formed for the first acoustic impedance material and the second acoustic impedance material,
Wherein, the acoustic impedance of the first acoustic impedance material is less than the second acoustic impedance material.
Further, the material of first electrode and the second electrode lay is at least one of：Molybdenum, tungsten, aluminium；And/or piezoelectricity
The material of layer is at least one of：Aluminium nitride, zinc oxide, PZT；And/or the material of substrate includes at least one of：Silicon,
Glass, sapphire, GaAs.
The resonator of the present invention includes substrate, first electrode, piezoelectric layer, the second electrode lay, wherein, first electrode is located at
On substrate, there is sound wave resonance portion between the part and substrate of first electrode；Piezoelectric layer, in first electrode；Second electricity
Pole layer, on piezoelectric layer, wherein, the second electrode lay is divided into second electrode and reflecting grating in central area, reflection
The first pre-determined distance is spaced between grid and second electrode, solves the problems, such as that sound wave easily to resonator external leakage, passes through reflection
The structure of grid can effectively organize sound wave to resonator external leakage, so reached improve thin film bulk acoustic wave resonator quality because
Several effects.
Description of the drawings
The attached drawing for forming the part of the application is used to provide further understanding of the present invention, schematic reality of the invention
Example and its explanation are applied for explaining the present invention, is not constituted improper limitations of the present invention.In the accompanying drawings：
Fig. 1 a are a kind of schematic diagrames of resonator according to prior art；
Fig. 1 b are diagrammatic cross-section of the resonator at dotted line shown in Fig. 1 a；
Fig. 2 a are the schematic diagrames of another resonator according to prior art；
Fig. 2 b are diagrammatic cross-section of the resonator at dotted line shown in Fig. 2 a；
Fig. 3 a are the schematic diagrames of resonator according to a first embodiment of the present invention；
Fig. 3 b are diagrammatic cross-section of the resonator at dotted line shown in Fig. 3 a；
Fig. 4 a are the schematic diagrames of resonator according to a second embodiment of the present invention；
Fig. 4 b are diagrammatic cross-section of the resonator at dotted line shown in Fig. 4 a；
Fig. 5 a are the schematic diagrames of resonator according to a third embodiment of the present invention；
Fig. 5 b are diagrammatic cross-section of the resonator at dotted line shown in Fig. 5 a；
Fig. 6 a are the schematic diagrames of resonator according to a fourth embodiment of the present invention；
Fig. 6 b are diagrammatic cross-section of the resonator at dotted line shown in Fig. 6 a.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order to which those skilled in the art is made to more fully understand application scheme, below in conjunction in the embodiment of the present application
The technical solution in the embodiment of the present application is clearly and completely described in attached drawing, it is clear that described embodiment is only
The embodiment of the application part, instead of all the embodiments.Based on the embodiment in the application, ordinary skill people
Member's all other embodiments obtained without making creative work should all belong to the model of the application protection
It encloses.
It should be noted that term " first " in the description and claims of this application and above-mentioned attached drawing, "
Two " etc. be the object for distinguishing similar, and specific sequence or precedence are described without being used for.It should be appreciated that it uses in this way
Data can be interchanged in the appropriate case, so as to embodiments herein described herein.In addition, term " comprising " and " tool
Have " and their any deformation, it is intended that cover non-exclusive include.
The embodiment provides a kind of resonators.
Fig. 3 a and Fig. 3 b respectively illustrate the vertical view and dotted line position in a top view of the resonator of first embodiment
Sectional view.As shown in Figure 3a and Figure 3b shows, which includes substrate 301, first electrode 306, piezoelectric layer 305, second electrode
Layer, wherein, the second electrode lay includes second electrode 303 and reflecting grating 304.
First electrode 306 is located on substrate 301, has sound wave resonance between a part for first electrode 306 and substrate 301
Portion 302.
Piezoelectric layer 305 is located in first electrode 306.
The second electrode lay is located on piezoelectric layer 305, wherein, the second electrode lay is divided into the second electricity in central area
Pole 303 and reflecting grating 304, are spaced the first pre-determined distance between reflecting grating 304 and second electrode 303.
The sound wave that resonator leaks can be reflected back resonance again in the reflecting grating 304 of 303 peripheral region of second electrode
Device, therefore can effectively prevent sound wave toward resonator external leakage, so as to improve the quality of thin film bulk acoustic wave resonator because
Number.
Since reflecting grating 304 directly uses the second electrode lay of resonator 300, the structure of reflecting grating will not draw
Enter additional manufacturing process.In addition, since the reflection grid structure is in the effective resonance range of resonator (that is, second electrode 303)
Outside, therefore additional parasitic capacitance will not be introduced, would not also damage the effective electro-mechanical couple factor of resonator.
Optionally, reflecting grating 304 is cyclic structure as shown in fig. 3a, and reflecting grating 304 surrounds second electrode 303.
The second electrode lay may have one or more reflecting gratings 304 (being as shown in fig. 3a three reflecting gratings), if
For multiple reflecting gratings, then multiple reflecting gratings are cyclic structure nested against one another, and it is default to be spaced second between two neighboring reflecting grating
Distance.
In the resonator that the embodiment provides, substrate has groove, and the part covering groove of first electrode forms cavity
302, the cavity 302 is as sound wave resonance portion.
The material of substrate 301 includes but not limited to silicon, glass, sapphire, GaAs etc..First electrode 306 and second electrode
303 material includes but not limited to molybdenum, tungsten, aluminium etc., wherein, it is anti-since reflecting grating 304 is directly to use the second electrode lay
Penetrate the material of grid 304 and the material identical of second electrode 303.The material of piezoelectric layer 305 include but not limited to aluminium nitride (AlN),
The materials such as zinc oxide (ZnO), PZT.
Fig. 4 a and Fig. 4 b respectively illustrate the vertical view and dotted line position in a top view of the resonator of second embodiment
Sectional view.As shown in figures 4 a and 4b, which includes substrate 401, first electrode 402, piezoelectric layer 405, second electrode
Layer, wherein, the second electrode lay includes second electrode 403 and reflecting grating 404.
First electrode 402 is located on substrate 401, has sound wave resonance between a part for first electrode 402 and substrate 401
Portion.
Piezoelectric layer 405 is located in first electrode 402.
The second electrode lay is located on piezoelectric layer 405, wherein, the second electrode lay is divided into the second electricity in central area
Pole 403 and reflecting grating 404, are spaced the first pre-determined distance between reflecting grating 404 and second electrode 403.
It is reflected back again in the sound wave that the reflecting grating 404 of 403 peripheral region of second electrode can leak resonator 400 humorous
Shake device 400, therefore can effectively prevent sound wave toward 400 external leakage of resonator, so as to improve thin film bulk acoustic wave resonator
400 quality factor.
Since reflecting grating 404 directly uses the second electrode lay of resonator 400, the structure of reflecting grating 404 is not
Additional manufacturing process can be introduced.In addition, due to 404 structure of reflecting grating in 400 effective resonance range of resonator (that is,
Two electrodes 403) outside, therefore additional parasitic capacitance will not be introduced, would not also damage effective electromechanical coupling of resonator 400
Collaboration number.
Optionally, reflecting grating 404 is cyclic structure as is shown in fig. 4 a, and reflecting grating 404 surrounds second electrode 403.
The second electrode lay may have one or more reflecting gratings 404 (being as is shown in fig. 4 a three reflecting gratings 404), such as
Fruit is multiple reflecting gratings 404, then multiple reflecting gratings 404 are cyclic structure nested against one another, between two neighboring reflecting grating 404 between
Every the second pre-determined distance.
Acoustic reflector 420 is further included in the resonator 400 that the embodiment provides, acoustic reflector 420 is located at substrate 401
Between first electrode 402, wherein, acoustic reflector 420 is sound wave resonance portion.
The acoustic emission mirror 420 can include at least two layers of acoustic impedance material, it is preferable that the acoustic emission mirror can be the
One acoustic impedance material and the second acoustic impedance material are alternately formed, wherein, the acoustic impedance of the first acoustic impedance material is less than the second acoustic resistance
Anti- material.
For example, acoustic reflection mirror 420 can be by film 421, film 422, film 423, film as is shown in fig. 4 a
424th, film 425 forms, wherein film 421, film 423, film 425 be low acoustic impedance material, such as silica.Film 422,
Film 424 be high acoustic impedance materials, such as tungsten.
The material of substrate 401 includes but not limited to silicon, glass, sapphire, GaAs etc..First electrode 402 and second electrode
403 material includes but not limited to molybdenum, tungsten, aluminium etc., wherein, it is anti-since reflecting grating 404 is directly to use the second electrode lay
Penetrate the material of grid 404 and the material identical of second electrode 403.The material of piezoelectric layer 405 include but not limited to aluminium nitride (AlN),
The materials such as zinc oxide (ZnO), PZT.
Fig. 5 a and Fig. 5 b respectively illustrate the vertical view and dotted line position in a top view of the resonator of 3rd embodiment
Sectional view.As shown in figure 5 a and 5b, which includes substrate 501, first electrode 506,505 and second electricity of piezoelectric layer
Pole layer, wherein, the second electrode lay includes second electrode 503 and reflecting grating 504.
Difference lies in what the embodiment provided the resonator that the embodiment provides with the resonator that first embodiment provides
Reflecting grating 504 in resonator has notch as illustrated in fig. 5 a.Preferably, if the resonator includes multiple reflecting gratings
504, the gap position of each reflecting grating 504 is to be aligned (as shown in Figure 5 a).
The resonator phase that the other components and connection relation for the resonator 500 that the embodiment provides are provided with first embodiment
Seemingly, for example, the second electrode lay includes second electrode 503 and reflecting grating 504, there is cavity between substrate 501 and first electrode 506
502, cavity 502 is as sound wave resonance portion, etc., and details are not described herein.
Fig. 6 a and Fig. 6 b respectively illustrate the vertical view and dotted line position in a top view of the resonator of fourth embodiment
Sectional view.As shown in figures 6 a and 6b, which includes substrate 601, first electrode 606,605 and second electricity of piezoelectric layer
Pole layer, wherein, the second electrode lay includes second electrode 603 and reflecting grating 604.
Difference lies in the embodiment carries the resonator that the resonator 600 that the embodiment provides is provided with first embodiment
Each reflecting grating 604 in the resonator 600 of confession has two notches as shown in FIG. 6 a.Preferably, if the resonator
600 include multiple reflecting gratings 604, and each 604 corresponding gap position of reflecting grating is to be aligned (as shown in Figure 6 a).
The resonator phase that the other components and connection relation for the resonator 600 that the embodiment provides are provided with first embodiment
Seemingly, for example, the second electrode lay includes second electrode 603 and reflecting grating 604, there is cavity between substrate 601 and first electrode 606
602, cavity 602 is as sound wave resonance portion, etc., and details are not described herein.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, that is made any repaiies
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (11)
1. a kind of resonator, which is characterized in that including：Substrate, first electrode, piezoelectric layer, the second electrode lay, wherein,
The first electrode, it is humorous with sound wave between a part for the first electrode and the substrate on the substrate
Shake portion；
The piezoelectric layer, in the first electrode；
The second electrode lay, on the piezoelectric layer, wherein, the second electrode lay is divided into second in central area
Electrode and reflecting grating are spaced the first pre-determined distance between the reflecting grating and the second electrode.
2. resonator according to claim 1, which is characterized in that the reflecting grating be cyclic structure, the reflecting grating packet
Surround the second electrode.
3. resonator according to claim 2, which is characterized in that the second electrode lay there are multiple reflecting gratings,
The second pre-determined distance is spaced between two neighboring reflecting grating.
4. resonator according to claim 2, which is characterized in that the cyclic structure of the reflecting grating has notch.
5. resonator according to claim 4, which is characterized in that the second electrode lay there are multiple reflecting gratings,
The second pre-determined distance, and the gap position alignment of each reflecting grating are spaced between two neighboring reflecting grating.
6. resonator according to claim 4, which is characterized in that the second electrode includes multiple reflecting gratings, phase
The second pre-determined distance is spaced between adjacent two reflecting gratings, the cyclic structure of each reflecting grating includes at least the first notch and second and lacks
Mouthful, and the first gap position alignment of each reflecting grating, the second gap position alignment of each reflecting grating.
7. resonator according to claim 1, which is characterized in that the substrate have groove, the one of the first electrode
Part covers the groove and forms cavity, and the cavity is as the sound wave resonance portion.
8. resonator according to claim 1, which is characterized in that the resonator further includes：
Acoustic reflector between the substrate and the first electrode, wherein, the acoustic reflector is the sound wave
Resonant structure.
9. resonator according to claim 8, which is characterized in that the acoustic emission mirror includes at least two layers of acoustic impedance material
Material.
10. resonator according to claim 9, which is characterized in that at least two layers of acoustic impedance material is the first acoustic resistance
Anti- material and the second acoustic impedance material are alternately formed, wherein, the acoustic impedance of first acoustic impedance material is less than the rising tone
Impedance material.
11. resonator according to any one of claim 1 to 10, which is characterized in that the first electrode and described
The material of two electrode layers is at least one of：Molybdenum, tungsten, aluminium；And/or the material of the piezoelectric layer is at least one of：Nitrogen
Change aluminium, zinc oxide, PZT；And/or the material of the substrate includes at least one of：Silicon, glass, sapphire, GaAs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810098700.7A CN108233889A (en) | 2018-01-31 | 2018-01-31 | Resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810098700.7A CN108233889A (en) | 2018-01-31 | 2018-01-31 | Resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108233889A true CN108233889A (en) | 2018-06-29 |
Family
ID=62670387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810098700.7A Pending CN108233889A (en) | 2018-01-31 | 2018-01-31 | Resonator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108233889A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546985A (en) * | 2018-11-02 | 2019-03-29 | 天津大学 | Bulk acoustic wave resonator and its manufacturing method |
| CN110868186A (en) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Bulk acoustic wave resonator, method of manufacturing the same, and semiconductor device |
| CN111010128A (en) * | 2019-06-05 | 2020-04-14 | 天津大学 | Resonator with ring structure, filter and electronic equipment |
| CN111010138A (en) * | 2019-12-05 | 2020-04-14 | 武汉大学 | High Q bulk acoustic wave resonator |
| KR20200072904A (en) * | 2018-12-13 | 2020-06-23 | (주)와이솔 | Piezoelectric thin film resonator |
| WO2021027319A1 (en) * | 2019-08-15 | 2021-02-18 | 天津大学 | Resonator having composite annular structure, filter and electronic device |
| CN113364422A (en) * | 2021-06-18 | 2021-09-07 | 深圳市封神微电子有限公司 | Film bulk acoustic resonator with ring electrode |
| CN113726308A (en) * | 2021-02-22 | 2021-11-30 | 武汉衍熙微器件有限公司 | Bulk acoustic wave resonant structure and method of manufacturing the same |
| WO2022007234A1 (en) * | 2020-07-10 | 2022-01-13 | 瑞声声学科技(深圳)有限公司 | Resonator |
| CN114614792A (en) * | 2022-03-10 | 2022-06-10 | 电子科技大学 | Acoustic wave resonator and filter |
| EP4175171A4 (en) * | 2020-06-30 | 2024-01-03 | Rofs Microsystem (Tianjin) Co., Ltd | Bulk acoustic wave resonator and manufacturing method therefor, filter and electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020079986A1 (en) * | 2000-12-21 | 2002-06-27 | Ruby Richard C. | Bulk acoustic resonator perimeter reflection system |
| US20060170519A1 (en) * | 2005-01-31 | 2006-08-03 | Infineon Technologies Ag | BAW resonator |
| CN207853856U (en) * | 2018-01-31 | 2018-09-11 | 湖北宙讯科技有限公司 | Resonator |
-
2018
- 2018-01-31 CN CN201810098700.7A patent/CN108233889A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020079986A1 (en) * | 2000-12-21 | 2002-06-27 | Ruby Richard C. | Bulk acoustic resonator perimeter reflection system |
| US20060170519A1 (en) * | 2005-01-31 | 2006-08-03 | Infineon Technologies Ag | BAW resonator |
| CN207853856U (en) * | 2018-01-31 | 2018-09-11 | 湖北宙讯科技有限公司 | Resonator |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546985A (en) * | 2018-11-02 | 2019-03-29 | 天津大学 | Bulk acoustic wave resonator and its manufacturing method |
| KR20200072904A (en) * | 2018-12-13 | 2020-06-23 | (주)와이솔 | Piezoelectric thin film resonator |
| KR102212376B1 (en) * | 2018-12-13 | 2021-02-04 | (주)와이솔 | Piezoelectric thin film resonator |
| CN110868186B (en) * | 2019-04-23 | 2023-03-14 | 中国电子科技集团公司第十三研究所 | Bulk acoustic wave resonator, method of manufacturing the same, and semiconductor device |
| CN110868186A (en) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Bulk acoustic wave resonator, method of manufacturing the same, and semiconductor device |
| CN111010128A (en) * | 2019-06-05 | 2020-04-14 | 天津大学 | Resonator with ring structure, filter and electronic equipment |
| WO2021027319A1 (en) * | 2019-08-15 | 2021-02-18 | 天津大学 | Resonator having composite annular structure, filter and electronic device |
| CN111010138A (en) * | 2019-12-05 | 2020-04-14 | 武汉大学 | High Q bulk acoustic wave resonator |
| EP4175171A4 (en) * | 2020-06-30 | 2024-01-03 | Rofs Microsystem (Tianjin) Co., Ltd | Bulk acoustic wave resonator and manufacturing method therefor, filter and electronic device |
| WO2022007234A1 (en) * | 2020-07-10 | 2022-01-13 | 瑞声声学科技(深圳)有限公司 | Resonator |
| CN113726308A (en) * | 2021-02-22 | 2021-11-30 | 武汉衍熙微器件有限公司 | Bulk acoustic wave resonant structure and method of manufacturing the same |
| WO2022174587A1 (en) * | 2021-02-22 | 2022-08-25 | 武汉衍熙微器件有限公司 | Bulk acoustic wave resonant structure and manufacturing method therefor |
| CN113364422A (en) * | 2021-06-18 | 2021-09-07 | 深圳市封神微电子有限公司 | Film bulk acoustic resonator with ring electrode |
| CN114614792A (en) * | 2022-03-10 | 2022-06-10 | 电子科技大学 | Acoustic wave resonator and filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108233889A (en) | Resonator | |
| US11699988B2 (en) | Resonator and method for manufacturing the same | |
| US10355195B2 (en) | Acoustic resonator and method of manufacturing the same | |
| CN100505531C (en) | Piezoelectric thin-film resonator and filter using the same | |
| CN104639087B (en) | Piezoelectric thin film resonator, wave filter and duplexer | |
| WO2020161283A1 (en) | Low loss acoustic device | |
| KR101856060B1 (en) | Bulk acoustic wave resonator | |
| US6741145B2 (en) | Filter structure and arrangement comprising piezoelectric resonators | |
| US10756702B2 (en) | Acoustic resonator and acoustic resonator filter including the same | |
| CN108173528A (en) | Wave filter | |
| CN207853856U (en) | Resonator | |
| US20080051039A1 (en) | Film bulkacoustic wave resonator and method for manufacturing the same | |
| US10897002B2 (en) | Acoustic resonator and method of manufacturing the same | |
| JP2005159402A (en) | Acoustic resonator | |
| KR102029503B1 (en) | Bulk acoustic wave resonator and filter | |
| JP2018182463A (en) | Piezoelectric thin film resonator, filter and multiplexer | |
| JP2004515149A (en) | Improvements in or related to filters | |
| JP2018101952A (en) | Piezoelectric thin film resonator, filter and multiplexer | |
| JP2016096466A (en) | Piezoelectric thin film resonator, filter and duplexer | |
| US8471651B2 (en) | Microelectromechanical filter | |
| JP2018006919A (en) | Acoustic wave device | |
| US6737940B2 (en) | Piezoelectric resonator, manufacturing method for the same, piezoelectric filter, manufacturing method for the same, duplexer, and electronic communication device | |
| JP2020099050A (en) | Bipolar boundary region in piezoelectric device | |
| US20050099092A1 (en) | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor | |
| JP2018110317A (en) | Bulk elastic wave resonator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20180629 Assignee: Suzhou zexun Technology Co., Ltd Assignor: Hubei zeaun science and Technology Co., Ltd. Contract record no.: X2019320010013 Denomination of invention: A superconductive micro-strip resonantor License type: Common License Record date: 20191226 |