CN113364422A - Film bulk acoustic resonator with ring electrode - Google Patents
Film bulk acoustic resonator with ring electrode Download PDFInfo
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- CN113364422A CN113364422A CN202110681638.6A CN202110681638A CN113364422A CN 113364422 A CN113364422 A CN 113364422A CN 202110681638 A CN202110681638 A CN 202110681638A CN 113364422 A CN113364422 A CN 113364422A
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- electrode
- bulk acoustic
- lower electrode
- film bulk
- cavity
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- 239000000758 substrate Substances 0.000 claims abstract description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 230000001788 irregular Effects 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000002407 reforming Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a film bulk acoustic resonator with a ring electrode, which comprises a substrate, a piezoelectric stack structure, the ring electrode and a contact electrode, wherein the piezoelectric stack structure is arranged on the substrate; a cavity is etched on the substrate, and a piezoelectric stack structure is arranged above the cavity; the piezoelectric stack structure comprises a lower electrode, a piezoelectric layer and an upper electrode; the substrate and the cavity are provided with lower electrodes; the area of the lower electrode is larger than that of the cavity; a piezoelectric layer is deposited on the substrate and the lower electrode, and an upper electrode is deposited on the piezoelectric layer; the piezoelectric layer wraps the lower electrode; a plurality of circles of annular electrodes which are not in contact with each other are deposited on the upper electrode; a first through hole is etched in the piezoelectric layer and etched to the upper surface of the lower electrode; a second through hole communicated with the cavity is etched in the piezoelectric layer and the lower electrode; and contact electrodes are deposited in the first through holes and in the direction of the upper surface of the piezoelectric layer far away from the upper electrode, and the contact electrodes are connected with the lower electrode. The plurality of annular electrodes can effectively inhibit the transverse wave generation of the film bulk acoustic resonator and improve the Q value of the film bulk acoustic resonator.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a film bulk acoustic resonator with a ring electrode.
Background
In the field of mobile communication, rf devices such as antennas and filters play an important role, and the popularization of 5G technology requires that rf systems are continuously developed toward the targets of high frequency and wide frequency band, and the performance of rf front-end devices is required to be higher and higher. The performance of the filter, which is the most core component in the rf device, directly determines the performance of the rf front end. The film bulk acoustic wave filter has the advantages of small volume, high resonant frequency, low power loss, high quality factor (Q) and large power capacity, so the film bulk acoustic wave filter has wide application and development prospects in the related field, and has become a hot research door in the industry and academia.
The film bulk acoustic resonator is a main constituent unit of the film bulk acoustic filter, the basic structure of the film bulk acoustic resonator is a three-layer stacked structure of a lower electrode, a piezoelectric layer and an upper electrode, and the Q value is an important index for measuring the performance of the film bulk acoustic resonator. Longitudinal waves of the film bulk acoustic resonator are working modes of the film bulk acoustic resonator, but transverse wave vibration can be generated because the device cannot be infinite, the Q value is reduced, and the performance of the resonator is influenced.
Therefore, how to prevent the generation of the transverse acoustic wave when the resonator works and further increase the Q value of the film bulk acoustic resonator becomes a technical problem to be solved at present.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a film bulk acoustic resonator with a ring electrode so as to solve the problem that a transverse acoustic wave causes Q value reduction when the resonator works.
The invention relates to a film bulk acoustic resonator with a ring electrode, which comprises a substrate, a piezoelectric stack structure, the ring electrode and a contact electrode; a cavity is etched on the substrate, and a piezoelectric stack structure is arranged above the cavity; the piezoelectric stack structure comprises a lower electrode, a piezoelectric layer and an upper electrode; the substrate and the cavity are provided with lower electrodes; the area of the lower electrode is larger than that of the cavity; a piezoelectric layer is deposited on the substrate and the lower electrode, and an upper electrode is deposited on the piezoelectric layer; the area of the piezoelectric layer is larger than that of the upper electrode and the lower electrode, and the piezoelectric layer wraps the lower electrode; a plurality of circles of annular electrodes which are nested layer by layer are deposited on the upper electrode, and two adjacent circles of annular electrodes are not contacted; a first through hole is etched in the piezoelectric layer and etched to the upper surface of the lower electrode; a second through hole is etched in the piezoelectric layer and the lower electrode and is communicated with the cavity; and contact electrodes are deposited in the first through holes and in the direction of the upper surface of the piezoelectric layer far away from the upper electrode, and the contact electrodes are connected with the lower electrode.
Preferably, when the lower electrode is prepared, a sacrificial layer is deposited in the cavity, and then the lower electrode is deposited on the substrate and the sacrificial layer; the removing method of the sacrificial layer is as follows: and after the second through hole is etched, releasing corrosive liquid or corrosive gas in the second through hole to corrode the sacrificial layer, thereby reforming an open cavity.
Preferably, the shape of the cavity is one of trapezoid, triangle, rectangle, square, irregular polygon, circle or ellipse.
Preferably, the material of the lower electrode and the upper electrode is one of copper, silver, titanium, molybdenum, tungsten, aluminum, gold or platinum.
Preferably, the material of the piezoelectric layer is one of aluminum nitride, zinc oxide, lithium niobate, lithium nickelate or lead zirconate titanate.
Preferably, the shape of the piezoelectric stack structure is one of a trapezoid, a triangle, a rectangle, a square, a non-regular polygon, a circle, or an ellipse.
Preferably, the material of the ring electrode is one or more of copper, silver, titanium, molybdenum, tungsten, aluminum, gold and platinum, which are combined according to any proportion, and the materials of the adjacent ring electrodes are different.
Preferably, the shape of the ring electrode is one of a triangle, a rectangle, a square, a circle, an elliptical ring or an irregular polygon.
Preferably, the material of the contact electrode is one or more of copper, silver, titanium, molybdenum, tungsten, aluminum, gold and platinum in any proportion.
The invention has the following beneficial effects:
according to the invention, the plurality of annular electrodes are arranged on the upper electrode, the single annular electrode can inhibit the transmission of single-mode transverse waves in the transverse direction, the multi-stage annular electrode structure can inhibit the transmission of the multi-mode transverse waves in the transverse direction, and the annular electrodes of each stage in the multi-stage annular electrode structure are made of different materials and have different acoustic impedances, so that the generation of the transverse waves during the working of the resonator can be effectively reduced, and the Q value of the film bulk acoustic resonator is improved.
Drawings
FIG. 1 is a cross-sectional view of the present invention for fabricating a sacrificial layer and a piezoelectric stack structure on a substrate.
Fig. 2 is a cross-sectional view of a plurality of ring electrodes fabricated on the structure of fig. 1.
Fig. 3 is a cross-sectional view of a first via and a second via fabricated on the structure of fig. 2.
Fig. 4 is a cross-sectional view of the deposition of a contact electrode and release of a sacrificial layer on the structure of fig. 3.
Figure 5 is a graph comparing the impedance curves of the resonator of the present invention and a resonator without a ring electrode.
Detailed Description
The invention will be further explained with reference to the drawings.
As shown in fig. 1, 2, 3 and 4, the film bulk acoustic resonator having a ring electrode includes a substrate 101, a piezoelectric stack structure, a ring electrode 104 and a contact electrode 105; a cavity 109 is etched on the substrate 101, and a piezoelectric stack structure is arranged above the cavity 109 and comprises a lower electrode 103, a piezoelectric layer 107 and an upper electrode 106; the lower electrode 103 is arranged on the substrate 101 and the cavity 109; the area of the lower electrode is larger than the area of the cavity 109; depositing a piezoelectric layer 107 on the substrate 101 and the lower electrode 103, and depositing an upper electrode 106 on the piezoelectric layer 107; the area of the piezoelectric layer is larger than that of the upper electrode and the lower electrode, and the piezoelectric layer 107 wraps the lower electrode 103; a plurality of circles of annular electrodes 104 which are nested layer by layer are deposited on the upper electrode 106 and are used for reflecting longitudinal waves and transverse waves; two adjacent circles of ring electrodes 104 are not in contact, and the centers of the multiple circles of ring electrodes 104 can be located at the same position or different positions; a first through hole 108-1 is etched in the piezoelectric layer 107, and the first through hole 108-1 is etched on the upper surface of the lower electrode 103; a second through hole 108-2 is etched in the piezoelectric layer 107 and the lower electrode 103, and the second through hole 108-2 is communicated with the cavity 109; a contact electrode 105 is deposited in the first through hole 108-1 and on the upper surface of the piezoelectric layer 107 in a direction away from the upper electrode 106, and the contact electrode 105 is connected with the lower electrode 103.
When the lower electrode 103 is prepared, firstly, a sacrificial layer 102 is deposited in the cavity 109, and then the lower electrode 103 is deposited on the substrate 101 and the sacrificial layer 102; the sacrificial layer 102 is removed by: after the second via 108-2 is etched, the etching solution or etching gas is released in the second via 108-2 to etch the sacrificial layer 103, thereby reforming the open cavity 109.
As a preferred embodiment, the cavity 109 is one of trapezoidal, triangular, rectangular, square, irregular polygonal, circular, or oval.
As a preferred embodiment, the material of the lower electrode 103 and the upper electrode 106 is one of copper, silver, titanium, molybdenum, tungsten, aluminum, gold, or platinum.
As a preferred embodiment, the material of the piezoelectric layer 107 is one of aluminum nitride, zinc oxide, lithium niobate, lithium nickelate, or lead zirconate titanate.
As a preferred embodiment, the shape of the piezoelectric stack structure is one of a trapezoid, a triangle, a rectangle, a square, a non-regular polygon, a circle, or an ellipse.
In a preferred embodiment, the material of the ring electrode 104 is one or more of copper, silver, titanium, molybdenum, tungsten, aluminum, gold, and platinum, which are combined according to any proportion, and the material of the adjacent ring electrodes 104 is different.
As a preferred embodiment, the material of the contact electrode 105 is one or more of copper, silver, titanium, molybdenum, tungsten, aluminum, gold, and platinum, which are combined according to any proportion.
Fig. 5 is a graph comparing impedance curves of the thin film bulk acoustic filter of the present invention and a thin film bulk acoustic filter without a ring electrode structure, in which the ordinate represents the impedance of a resonator in ohms and the abscissa represents frequency in MHz (megahertz). According to the 3-dB bandwidth method, the Q values of the series resonance frequency point and the parallel resonance frequency point are calculated, in fig. 5, the Qs of the series resonance frequency point of the thin film bulk acoustic wave filter is 1354, the Qp of the parallel resonance frequency point is 1170, the Qs of the thin film bulk acoustic wave filter without the annular electrode structure is 1084, and the Qp of the parallel resonance frequency point is 940.
Claims (9)
1. The film bulk acoustic resonator with the ring electrode comprises a substrate, a piezoelectric stack structure and a contact electrode, and is characterized in that: also includes a ring electrode; a cavity is etched on the substrate, and a piezoelectric stack structure is arranged above the cavity; the piezoelectric stack structure comprises a lower electrode, a piezoelectric layer and an upper electrode; the substrate and the cavity are provided with lower electrodes; the area of the lower electrode is larger than that of the cavity; a piezoelectric layer is deposited on the substrate and the lower electrode, and an upper electrode is deposited on the piezoelectric layer; the area of the piezoelectric layer is larger than that of the upper electrode and the lower electrode, and the piezoelectric layer wraps the lower electrode; a plurality of circles of annular electrodes which are nested layer by layer are deposited on the upper electrode, and two adjacent circles of annular electrodes are not contacted; a first through hole is etched in the piezoelectric layer and etched to the upper surface of the lower electrode; a second through hole is etched in the piezoelectric layer and the lower electrode and is communicated with the cavity; and contact electrodes are deposited in the first through holes and in the direction of the upper surface of the piezoelectric layer far away from the upper electrode, and the contact electrodes are connected with the lower electrode.
2. The film bulk acoustic resonator having a ring electrode of claim 1, wherein: when the lower electrode is prepared, firstly, a sacrificial layer is deposited in the cavity, and then the lower electrode is deposited on the substrate and the sacrificial layer; the removing method of the sacrificial layer is as follows: and after the second through hole is etched, releasing corrosive liquid or corrosive gas in the second through hole to corrode the sacrificial layer, thereby reforming an open cavity.
3. The film bulk acoustic resonator having a ring electrode of claim 1, wherein: the shape of the cavity is one of trapezoid, triangle, rectangle, square, irregular polygon, circle or ellipse.
4. The film bulk acoustic resonator having a ring electrode of claim 1, wherein: the lower electrode and the upper electrode are made of one of copper, silver, titanium, molybdenum, tungsten, aluminum, gold or platinum.
5. The film bulk acoustic resonator having a ring electrode of claim 1, wherein: the piezoelectric layer is made of one of aluminum nitride, zinc oxide, lithium niobate, lithium nickelate or lead zirconate titanate.
6. The film bulk acoustic resonator having a ring electrode of claim 1, wherein: the shape of the piezoelectric stack structure is one of trapezoid, triangle, rectangle, square, irregular polygon, circle or ellipse.
7. The film bulk acoustic resonator having a ring electrode of claim 1, wherein: the material of the ring electrode is one or more of copper, silver, titanium, molybdenum, tungsten, aluminum, gold and platinum which are combined according to any proportion, and the materials of the adjacent ring electrodes are different.
8. The film bulk acoustic resonator having a ring electrode of claim 1, wherein: the shape of the ring electrode is one of triangle, rectangle, square, circular ring, elliptical ring or irregular polygon.
9. The film bulk acoustic resonator having a ring electrode of claim 1, wherein: the contact electrode is made of one or more of copper, silver, titanium, molybdenum, tungsten, aluminum, gold and platinum according to any proportion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110681638.6A CN113364422A (en) | 2021-06-18 | 2021-06-18 | Film bulk acoustic resonator with ring electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110681638.6A CN113364422A (en) | 2021-06-18 | 2021-06-18 | Film bulk acoustic resonator with ring electrode |
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| Publication Number | Publication Date |
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| CN113364422A true CN113364422A (en) | 2021-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110681638.6A Pending CN113364422A (en) | 2021-06-18 | 2021-06-18 | Film bulk acoustic resonator with ring electrode |
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| CN (1) | CN113364422A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117478100A (en) * | 2023-12-25 | 2024-01-30 | 深圳新声半导体有限公司 | Multiplexer with resonant cavity acoustic wave filter and preparation method thereof |
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|---|---|---|---|---|
| CN108233889A (en) * | 2018-01-31 | 2018-06-29 | 湖北宙讯科技有限公司 | Resonator |
| CN108964629A (en) * | 2018-07-04 | 2018-12-07 | 武汉大学 | A kind of tunable thin film bulk acoustic wave resonator |
| CN110417374A (en) * | 2019-08-27 | 2019-11-05 | 南方科技大学 | A kind of thin film bulk acoustic wave resonator and preparation method thereof |
| CN111010138A (en) * | 2019-12-05 | 2020-04-14 | 武汉大学 | High Q bulk acoustic wave resonator |
| CN111342800A (en) * | 2018-12-19 | 2020-06-26 | 天津大学 | Bulk acoustic wave resonator with discrete structure, filter, and electronic device |
| CN112311347A (en) * | 2020-10-16 | 2021-02-02 | 浙江大学杭州国际科创中心 | Structure capable of improving quality factor Q value of film bulk acoustic resonator |
| CN112803910A (en) * | 2020-12-29 | 2021-05-14 | 杭州电子科技大学 | Preparation method of single crystal film bulk acoustic resonator |
-
2021
- 2021-06-18 CN CN202110681638.6A patent/CN113364422A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108233889A (en) * | 2018-01-31 | 2018-06-29 | 湖北宙讯科技有限公司 | Resonator |
| CN108964629A (en) * | 2018-07-04 | 2018-12-07 | 武汉大学 | A kind of tunable thin film bulk acoustic wave resonator |
| CN111342800A (en) * | 2018-12-19 | 2020-06-26 | 天津大学 | Bulk acoustic wave resonator with discrete structure, filter, and electronic device |
| CN110417374A (en) * | 2019-08-27 | 2019-11-05 | 南方科技大学 | A kind of thin film bulk acoustic wave resonator and preparation method thereof |
| CN111010138A (en) * | 2019-12-05 | 2020-04-14 | 武汉大学 | High Q bulk acoustic wave resonator |
| CN112311347A (en) * | 2020-10-16 | 2021-02-02 | 浙江大学杭州国际科创中心 | Structure capable of improving quality factor Q value of film bulk acoustic resonator |
| CN112803910A (en) * | 2020-12-29 | 2021-05-14 | 杭州电子科技大学 | Preparation method of single crystal film bulk acoustic resonator |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117478100A (en) * | 2023-12-25 | 2024-01-30 | 深圳新声半导体有限公司 | Multiplexer with resonant cavity acoustic wave filter and preparation method thereof |
| CN117478100B (en) * | 2023-12-25 | 2024-04-16 | 深圳新声半导体有限公司 | Multiplexer with resonant cavity acoustic wave filter and preparation method thereof |
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