CN113489467B - Method for preparing single crystal film bulk acoustic resonator and filter by adopting improved process - Google Patents
Method for preparing single crystal film bulk acoustic resonator and filter by adopting improved process Download PDFInfo
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- CN113489467B CN113489467B CN202110753183.4A CN202110753183A CN113489467B CN 113489467 B CN113489467 B CN 113489467B CN 202110753183 A CN202110753183 A CN 202110753183A CN 113489467 B CN113489467 B CN 113489467B
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- 239000000463 material Substances 0.000 claims description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 15
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 14
- 238000002207 thermal evaporation Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011787 zinc oxide Substances 0.000 claims description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 claims description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims description 2
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
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- 238000000427 thin-film deposition Methods 0.000 claims description 2
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a method for preparing a single crystal film bulk acoustic resonator and a filter by adopting an improved process. The method comprises the steps of depositing a first layer to be bonded on one side surface of a substrate; depositing a piezoelectric layer on one side surface of a substrate; depositing a first electrode on the surface of the piezoelectric layer; and depositing a second layer to be bonded on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode, or depositing the second layer to be bonded on the surfaces of the piezoelectric layer, the Bragg reflection layer and the first electrode, and attaching the substrate containing the first layer to be bonded to the substrate containing the second layer to be bonded by using a bonding process to obtain a device with compact bonding interface, so that the problems of device collapse, bonding release and the like caused by gaps in interface bonding in the subsequent thinning process of the back substrate of the thin film bulk acoustic resonator device are reduced.
Description
Technical Field
The invention relates to a film bulk acoustic resonator, in particular to a method for preparing a monocrystalline film bulk acoustic resonator and a filter by adopting an improved process.
Background
With the rapid development of mobile communication technology, market demands for high-frequency resonators and filters are increasing. Compared with the traditional microwave ceramic resonator and the surface wave resonator, the Film Bulk Acoustic Resonator (FBAR) has the advantages of small volume, low loss, high quality factor, large power capacity, high resonant frequency and the like, so that the Film Bulk Acoustic Resonator (FBAR) has wide application prospect in the related fields, especially in the aspect of high-frequency communication, and becomes a popular research in the industry and academia.
The film bulk acoustic resonator is a main constituent unit of a film bulk acoustic filter, and its basic structure is a sandwich piezoelectric oscillator in which two metal electrodes sandwich a piezoelectric film layer.
The thickness of the piezoelectric thin film layer determines the operating frequency of the bulk acoustic wave resonator, and the quality of the thin film layer determines the performance of the resonator, such as Q value, electromechanical coupling coefficient, FOM value, etc. The main piezoelectric films such as ZnO and AlN are prepared by magnetron sputtering, and are polycrystalline piezoelectric films, and the thickness of the polycrystalline piezoelectric films is more than 500nm, so that the working frequency of the bulk acoustic wave resonator is low. On the other hand, the defects in the polycrystalline thin film are more, so that the loss of the BAW resonator is larger, and the Q value is difficult to improve. Along with the progress of film preparation technology and equipment, the preparation technology of the single crystal piezoelectric film is also more and more mature, and the single crystal piezoelectric film has good crystal quality, few defects and wide interest in scientific research and industry because of being capable of preparing BAW resonators with higher frequency and Q value. However, the single crystal thin film BAW device is relatively difficult to manufacture, and in particular, how to ensure that the front side single crystal piezoelectric layer is not damaged during the substrate thinning process, so that a suitable bonding process needs to be developed to realize the manufacture of the single crystal thin film bulk acoustic resonator.
Disclosure of Invention
The invention aims to obtain a device with compact bonding interface by using a bonding process, so as to reduce the problems of collapse, unbinding and the like of the device caused by gaps existing in interface bonding in the subsequent thinning process of the back substrate of the thin film bulk acoustic resonator device, and the parasitic capacitance can be avoided from being formed in the subsequent device preparation process by adopting the bonding process.
The invention is realized by adopting the following technical scheme:
the invention relates to a method for preparing a single crystal film bulk acoustic resonator by adopting an improved process, which comprises the following specific steps:
s1, ultrasonically washing a substrate and a base by using acetone and isopropanol; then depositing a first layer to be bonded on one side surface of the substrate;
S2, depositing a piezoelectric layer on one side surface of the substrate;
S3, depositing metal on the surface of the piezoelectric layer, and patterning to serve as a first electrode;
s4 operates in one of three schemes:
First scheme
S4.1.1, depositing polycrystalline silicon or amorphous silicon on the surface of the first electrode by adopting a plasma chemical vapor deposition process, and patterning to serve as a sacrificial layer;
S4.1.2 depositing a silicon oxide film on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by adopting a low-pressure chemical vapor deposition process to serve as a second layer to be bonded, and flattening the second surface of the second layer to be bonded by adopting a chemical mechanical polishing mode.
Second scheme
S4.2.1 depositing silicon dioxide or doping carbon dioxide on the surface of the first electrode by adopting a plasma chemical vapor deposition process, and patterning to be used as a sacrificial layer;
s4.2.2 operate in one of two ways:
① Depositing films (such as AlN and Al 2O3 films) resistant to corrosion of hydrofluoric acid or hydrogen fluoride gas on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by using a low-pressure chemical vapor deposition process, patterning, and wrapping patterned silicon dioxide or doping carbon dioxide; and then depositing a silicon oxide film as a second layer to be bonded, and polishing the second layer to be bonded by adopting a chemical mechanical polishing mode to enable the surface of the second layer to be bonded to be flat.
② And depositing polysilicon on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by using a low-pressure chemical vapor deposition process to serve as a second layer to be bonded, and polishing the second layer to be bonded by adopting a chemical mechanical polishing mode to enable the second layer to be bonded to be flat.
Third scheme
S4.3.1 alternately depositing high-acoustic-resistivity reflecting layers and low-acoustic-resistivity reflecting layers on the surface of the first electrode by a thin film deposition technology, and patterning to form a Bragg reflecting layer;
s4.3.2 depositing a silicon oxide film on the surfaces of the piezoelectric layer, the Bragg reflection layer and the first electrode by using a low-pressure chemical vapor deposition process to serve as a second layer to be bonded. And then polishing the surfaces of the second layer to be bonded and the Bragg reflection layer in a chemical mechanical polishing mode to enable the surface of the second layer to be bonded to be flat.
S5, attaching the substrate containing the first layer to be bonded to the substrate containing the second layer to be bonded, and connecting the substrate and the substrate through a bonding process, so that a compact interface is formed between the first layer to be bonded and the second layer to be bonded and between the first layer to be bonded and the sacrificial layer; and the first layer to be bonded is directly bonded with the second layer to be bonded or metal is deposited on the surfaces of the first layer to be bonded and the second layer to be bonded, and metal bonding is used.
S6, thinning the substrate by adopting a grinding and chemical mechanical polishing mode;
s7, removing the thinned substrate by adopting an etching process;
s8, depositing metal on the surface of the piezoelectric layer by adopting a thermal evaporation or magnetron sputtering method, and patterning to form a second electrode; the second electrode comprises a first electrode part and a second electrode part which are arranged at intervals.
S9 operates in one of two schemes:
s4, when the first scheme or the second scheme is adopted, the following steps are executed:
S9.1.1 forming a first through hole and a second through hole on the surface of the piezoelectric layer by adopting a plasma etching or wet etching process; the first through hole is a first electrode metal PAD filling hole; the second through hole is a sacrificial layer release hole;
s9.1.2 depositing metal on the surface of the piezoelectric layer, the first through hole and the surface of the first electrode part by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process method to form a first metal PAD part, wherein the first metal PAD part is not connected with the second electrode part; depositing metal on the surface of the piezoelectric layer and the surface of the electrode part II by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process method to form a metal PAD part II;
S9.1.3 removing the sacrificial layer by using the second through hole through a wet etching process or a dry etching process to form a first cavity;
s4, when the third scheme is adopted, executing the following steps:
S9.2.1 forming a first through hole on the surface of the piezoelectric layer by adopting a plasma etching or wet etching process; the first through hole is a first electrode metal PAD filling hole;
S9.2.2 depositing metal on the surface of the piezoelectric layer, the first through hole and the surface of the first electrode part by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process method to form a first metal PAD part, wherein the first metal PAD part is not connected with the second electrode part; depositing metal on the surface of the piezoelectric layer and the surface of the electrode part II by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process method to form a metal PAD part II;
Preferably, the substrate and the base are made of one or more of glass, silicon carbide, silicon nitride or ceramic in any proportion.
Preferably, the piezoelectric layer is made of one or more of single crystal aluminum nitride, polycrystalline aluminum nitride, zinc oxide, single crystal lithium tantalate, lead zirconate titanate and lithium niobate, and the thickness is 10nm-4000nm.
Preferably, the material of the first electrode is one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum, which are combined according to any proportion, the thickness is 50nm-500nm, and the transverse width is 30-600 mu m; the second electrode is made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum, the thickness is 50nm-500nm, and the transverse width of the second electrode is 20-500 mu m.
Preferably, the material of the sacrificial layer is one or two of polysilicon, amorphous silicon, silicon dioxide and doped carbon dioxide, which are combined according to any proportion; the thickness of the sacrificial layer is 0.5-3 mu m, and the transverse width is 20-500 mu m; the high-acoustic-resistivity reflecting layer material of the Bragg reflecting layer is silicon carbide, aluminum nitride, silicon nitride, molybdenum, gold, platinum or tungsten; the low-acoustic-resistivity reflecting layer material of the Bragg reflecting layer is silicon dioxide, silicon oxycarbide, aluminum, borosilicate glass or polyphenylene polymer; the Bragg reflection layer has a thickness of 0.5-5 μm and a lateral width of 20-500 μm.
Preferably, the cross sections of the first through hole and the second through hole are round, ladder-shaped, triangular, rectangular or square; when the cross sections of the first through hole and the second through hole are circular, the diameters are all in the range of 5um-50um, and when the cross sections are ladder-shaped, triangular, rectangular or square, the diameters of the circumscribed circles are all in the range of 5um-50 um.
Preferably, the first metal PAD part and the second metal PAD part are made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum in any proportion; the thickness of the first metal PAD part and the second metal PAD part is 10nm-5000nm.
Preferably, the cross section of the sacrificial layer and the first cavity is round, oval, ladder-shaped, triangular, rectangular or square, the depth of the first cavity is 0.5-3 μm, and the transverse width is 20-500 μm.
The method for preparing the filter by adopting the single crystal film bulk acoustic resonator of the invention comprises the following steps:
The first scheme is as follows:
A plurality of single crystal film bulk acoustic wave resonators are built into a ladder type filter circuit, each ladder of the ladder type filter circuit is composed of two single crystal film bulk acoustic wave resonators, one single crystal film bulk acoustic wave resonator is arranged in series, and the other single crystal film bulk acoustic wave resonator is arranged in parallel.
The second scheme is as follows:
The four single crystal film bulk acoustic resonators are built into a cross filter circuit, the first single crystal film bulk acoustic resonator is connected with the second single crystal film bulk acoustic resonator in series, the third single crystal film bulk acoustic resonator and the fourth single crystal film bulk acoustic resonator form a fork-shaped arrangement, one end of the fork shape is connected with two ends of the first single crystal film bulk acoustic resonator, and the other end of the fork shape is connected with two ends of the second single crystal film bulk acoustic resonator;
third scheme:
the ladder-type filter circuit and the cross-type resonator circuit are connected in series to construct a hybrid filter.
Preferably, when the two single crystal film bulk acoustic resonators are connected in series, the passivation material layer is positioned between the piezoelectric layers, the first layer to be bonded and the second layer to be bonded of the two single crystal film bulk acoustic resonators; when the two single crystal film bulk acoustic resonators are connected in parallel, the passivation material layer is positioned between the piezoelectric layers of the two single crystal film bulk acoustic resonators; the passivation material layer is one or more of silicon dioxide, silicon nitride and aluminum nitride, ta 2O5, polyimide and benzocyclobutene according to any proportion.
The invention has the beneficial effects that:
According to the invention, the CMP treatment is firstly carried out on the interface to be bonded, and then the device with compact bonding interface is obtained in a bonding mode, so that the collapse and bonding release of the device in the subsequent substrate thinning process are avoided, the performance of the device is improved, and the film bulk acoustic resonator with high frequency and high Q value can be prepared. The method is particularly suitable for preparing the monocrystalline film bulk acoustic resonator, and provides a method for preparing the monocrystalline FBAR with better performance.
Drawings
FIG. 1 is a cross-sectional view of a first layer to be bonded prepared on a substrate in accordance with the present invention.
Fig. 2 is a cross-sectional view of a piezoelectric layer obtained on a substrate.
Fig. 3 is a cross-sectional view of a metal electrode fabricated on the structure of fig. 2.
Fig. 4 is a cross-sectional view of a sacrificial layer fabricated over the structure of fig. 3.
Fig. 5 is a cross-sectional view of a second layer to be bonded prepared on the structure of fig. 4 and subjected to chemical mechanical polishing.
Fig. 6 is a cross-sectional view of the structure of fig. 1 bonded to the structure of fig. 5.
Fig. 7 is a cross-sectional view of a thinned substrate over the structure of fig. 6.
Fig. 8 is a cross-sectional view of the structure of fig. 7 with the substrate removed.
Fig. 9 is a cross-sectional view of a metal electrode fabricated on the structure of fig. 8.
Fig. 10 is a cross-sectional view of a via hole fabricated in the structure of fig. 9.
Fig. 11 is a cross-sectional view of the deposition and patterning of metal PAD on the structure of fig. 10.
Fig. 12 is a cross-sectional view of the structure of fig. 11 after removal of the sacrificial layer.
FIG. 13 is a cross-sectional view of a second layer to be bonded containing a Bragg reflector layer, which has been subjected to a chemical mechanical polishing process.
Fig. 14 is a schematic diagram of a solid state assembled thin film bulk acoustic resonator made by the method of the present invention.
Fig. 15 is a schematic view of a ladder filter composed of thin film bulk acoustic resonators.
Fig. 16 is a schematic diagram of a crossed filter composed of thin film bulk acoustic resonators.
Fig. 17 is a schematic diagram of a hybrid filter composed of thin film bulk acoustic resonators.
Fig. 18 is a schematic diagram of a thin film bulk acoustic resonator in series.
Fig. 19 is a schematic diagram of a thin film bulk acoustic resonator in parallel.
Detailed Description
The invention will be further described with reference to the accompanying drawings and examples.
Example 1:
The method for preparing the single crystal film bulk acoustic resonator by adopting the improved process comprises the following specific steps:
(1) Ultrasonic washing is carried out on the substrate 100 and the substrate 200 by using acetone and isopropanol, and the orientation of the substrate 100 and the substrate 200 is (111) or (100);
(2) As shown in fig. 1, a first layer to be bonded 101 is deposited on one side surface of a substrate 100 by a Low Pressure Chemical Vapor Deposition (LPCVD) process, and the first layer to be bonded 101 is made of one or two of silicon oxide and silicon in any ratio and has a thickness of 0.1-3 μm (preferably 0.5 μm).
(3) As shown in fig. 2, a piezoelectric layer 201 having a crystal orientation along a C-axis (crystal axis) is deposited on one side surface of a substrate 200 with a thickness of 10nm to 4000nm by a Metal Organic Chemical Vapor Deposition (MOCVD) process.
(4) As shown in fig. 3, a metal molybdenum with a thickness of 250nm is deposited on the surface of the piezoelectric layer 201 by a thermal evaporation or magnetron sputtering method, and patterned by a plasma or wet etching method to form a first electrode 202, wherein the lateral width of the first electrode 202 is 30-600 μm (preferably 300 μm).
(5) As shown in fig. 4, an amorphous silicon thin film having a thickness of 3 μm is deposited on the surface of the first electrode 202 by a plasma chemical vapor deposition process, and patterned by a plasma or wet etching method, to form a sacrificial layer 203, the sacrificial layer 203 having a lateral width of 20-500 μm (preferably 200 μm).
(6) As shown in fig. 5, a second layer 204 to be bonded is deposited on the surfaces of the piezoelectric layer 201, the sacrificial layer 203 and the first electrode 202 by using a Low Pressure Chemical Vapor Deposition (LPCVD), and the surface of the second layer 204 to be bonded is planarized by using a chemical mechanical polishing method, and the final thickness of the second layer 204 to be bonded is 2-3 μm (preferably 2.5 μm). Wherein, the material of the second layer 204 to be bonded is one or two of silicon oxide and silicon, which are combined according to any proportion, and the thickness is 4 mu m.
(7) As shown in fig. 6, the substrate 100 containing the first layer to be bonded is attached to the base 200 containing the second layer to be bonded, and is connected by a bonding process at 350 ℃ so that the first layer to be bonded 101, the second layer to be bonded 204 and the sacrificial layer 203 form a dense interface 205; and the first layer to be bonded is directly bonded with the second layer to be bonded or metal is deposited on the surfaces of the first layer to be bonded and the second layer to be bonded, and metal bonding is used.
(8) As shown in FIG. 7, the substrate 200 is thinned by grinding and chemical mechanical polishing to a final residual substrate thickness of 5-20 μm (preferably 10 μm).
(9) As shown in fig. 8, a plasma etching process is used to remove the thinned substrate.
(10) As shown in fig. 9, a metal molybdenum with a thickness of 170nm is deposited on the surface of the piezoelectric layer 201 by adopting a thermal evaporation or magnetron sputtering method, and is patterned by adopting a plasma or wet etching method to form a second electrode; the second electrode comprises a first electrode part 206-1 and a second electrode part 206-2 which are arranged at intervals; the lateral width of the second electrode (the lateral width between the opposite faces of electrode part one 206-1 and electrode part two 206-2) is 20-500 μm (preferably 180 μm).
(11) As shown in fig. 10, a first through hole 207-1 and a second through hole 207-2 are formed on the surface of the piezoelectric layer by adopting a plasma etching or wet etching process; the first through hole 207-1 is positioned at a distance between the first electrode part 206-1 and the second electrode part 206-2, and the bottom of the first through hole 207-1 is opened on the surface of the first electrode 202 to fill the hole for the first electrode 202 metal PAD; the bottom of the second through hole 207-2 is opened on the surface of the sacrificial layer 203, and is a sacrificial layer release hole, and the diameters of the first through hole and the second through hole are all in the range of 5um-50 um.
(12) As shown in fig. 11, gold is deposited on the surface of the piezoelectric layer 201, the through hole 207-1 and the electrode 206-1 by thermal evaporation or magnetron sputtering, and patterned by a metal lift-off process to form a metal PAD portion 208-1, wherein the thickness from the surface of the metal PAD portion 208-1 to the surface of the piezoelectric layer 201 is 1 μm; gold is deposited on the surface of the piezoelectric layer 201 and the surface of the electrode part II 206-2 by adopting a thermal evaporation or magnetron sputtering method, and is patterned by adopting a metal stripping process method to form a metal PAD part II 208-2, wherein the thickness from the surface of the metal PAD part II 208-2 to the surface of the piezoelectric layer 201 is 1 mu m; the metal PAD portion one 208-1 is not connected to the electrode portion two 206-2.
(13) As shown in fig. 12, the sacrificial layer 203 is removed by a wet etching process or a dry etching process using the second via 207-2 to form a first cavity 203-1.
Example 2:
The method for preparing the single crystal film bulk acoustic resonator by adopting the improved process comprises the following specific steps:
step one: steps (1) to (4) in example 1 are performed.
Step two: as shown in fig. 13, the high-resistivity reflective layer and the low-resistivity reflective layer are alternately deposited on the surface of the first electrode 202 by using a thin film deposition technique, and patterned by a plasma etching or wet etching process to form the bragg reflective layer 209 having a thickness of 0.5 to 5 μm (preferably 3 μm) and a lateral width of 20 to 500 μm (preferably 200 μm).
Step three: as shown in fig. 13, a second layer 204 to be bonded is deposited on the surfaces of the piezoelectric layer 201, the bragg reflection layer 209 and the first electrode 202 by using a Low Pressure Chemical Vapor Deposition (LPCVD) process, and the second layer 204 to be bonded is planarized by using a chemical mechanical polishing (cmp) process, and the final thickness of the second layer 204 to be bonded is 2-3 μm (preferably 2.5 μm).
Step four: as shown in fig. 14, steps (7) to (10) in embodiment 1 are performed; then, a first through hole 207-1 is formed on the surface of the piezoelectric layer by adopting a plasma etching or wet etching process; the first through hole 207-1 is located at a distance between the first electrode portion 206-1 and the second electrode portion 206-2, and the bottom of the first through hole 207-1 is opened on the surface of the first electrode 202 to fill the hole with the metal PAD of the first electrode 202, and the diameter of the first through hole is valued in the range of 5um-50 um.
Step five: step (12) in example 1 is performed.
Example 3:
the method for preparing the filter by adopting the single crystal film bulk acoustic resonator of the embodiment 1 or 2 is as follows:
As shown in fig. 15, a ladder-type filter circuit is built by using a plurality of single crystal film bulk acoustic resonators, each ladder of the ladder-type filter circuit is composed of two single crystal film bulk acoustic resonators, one is arranged in series, and the other is arranged in parallel. The ladder-type filter circuit is added with a step, so that the capability of eliminating interference frequencies can be enhanced, and out-of-band attenuation (with steeper skirt curves) generated by the ladder-type filter circuit is better, but the ladder-type filter circuit is based on insertion loss and more energy consumption.
Example 4:
the method for preparing the filter by adopting the single crystal film bulk acoustic resonator of the embodiment 1 or 2 is as follows:
As shown in fig. 16, four single crystal film bulk acoustic resonators are used to build a cross filter circuit, the first single crystal film bulk acoustic resonator is connected in series with the second single crystal film bulk acoustic resonator, the third single crystal film bulk acoustic resonator and the fourth single crystal film bulk acoustic resonator form a fork arrangement, one end of the fork is connected with two ends of the first single crystal film bulk acoustic resonator, and the other end of the fork is connected with two ends of the second single crystal film bulk acoustic resonator; the skirt curve of the modeling filter is too gentle and the out-of-band attenuation is poor.
Example 5:
as shown in fig. 17, the ladder-type filter circuit of example 4 and the crossover-type resonator circuit of example 5 were connected in series to construct a hybrid filter, which had a steeper skirt curve and a better out-of-band attenuation.
The two single crystal film bulk acoustic resonators are connected in series in such a way that a first metal PAD part 208-1 of one single crystal film bulk acoustic resonator and a second metal PAD part 208-2 of the other single crystal film bulk acoustic resonator are connected to form a metal PAD208, the metal PAD208 connects a first electrode part 206-1 of one single crystal film bulk acoustic resonator and a second electrode part 206-2 of the other single crystal film bulk acoustic resonator, as shown in fig. 18, and a first metal PAD part 208-1 of one single crystal film bulk acoustic resonator and a second metal PAD part 208-2 of the other single crystal film bulk acoustic resonator are used as two new electrodes after the two single crystal film bulk acoustic resonators are connected in series. The passivation material layer 103 is located between the piezoelectric layers 201, the first to-be-bonded layers 101 and 204 of the two single crystal film bulk acoustic resonators, and plays a role in isolation.
The two single crystal film bulk acoustic resonators are connected in parallel in such a way that a second metal PAD part 208-2 of the two single crystal film bulk acoustic resonators is connected to form a second metal PAD208, the second metal PAD208 connects the second electrode parts 206-2 of the two single crystal film bulk acoustic resonators, and a first metal PAD part 208-1 of the two single crystal film bulk acoustic resonators is used as two new electrodes after the two single crystal film bulk acoustic resonators are connected in parallel, as shown in fig. 19; or the mode of connecting the two single crystal film bulk acoustic resonators in parallel is that the first metal PAD part 208-1 of the two single crystal film bulk acoustic resonators is connected to form the metal PAD208, the first metal PAD208 connects the first electrode parts 206-1 of the two single crystal film bulk acoustic resonators, and the second metal PAD part 208-2 of the two single crystal film bulk acoustic resonators is used as two new electrodes after the two single crystal film bulk acoustic resonators are connected in parallel. Wherein the passivation material layer 103 is located between the piezoelectric layers 201 of the two single crystal thin film bulk acoustic resonators, isolating the piezoelectric layers 201 of the two single crystal thin film bulk acoustic resonators.
Claims (10)
1. The method for preparing the single crystal film bulk acoustic resonator by adopting the improved process is characterized by comprising the following steps of: the method comprises the following specific steps:
s1, ultrasonically washing a substrate and a base by using acetone and isopropanol; then depositing a first layer to be bonded on one side surface of the substrate;
S2, depositing a piezoelectric layer on one side surface of the substrate;
S3, depositing metal on the surface of the piezoelectric layer, and patterning to serve as a first electrode;
s4 operates in one of three schemes:
First scheme
S4.1.1, depositing polycrystalline silicon or amorphous silicon on the surface of the first electrode by adopting a plasma chemical vapor deposition process, and patterning to serve as a sacrificial layer;
S4.1.2 depositing a silicon oxide film on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by adopting a low-pressure chemical vapor deposition process to serve as a second layer to be bonded, and flattening the second surface of the second layer to be bonded by adopting a chemical mechanical polishing mode;
Second scheme
S4.2.1 depositing silicon dioxide or doping carbon dioxide on the surface of the first electrode by adopting a plasma chemical vapor deposition process, and patterning to be used as a sacrificial layer;
s4.2.2 operate in one of two ways:
① Depositing a film resistant to corrosion of hydrofluoric acid or hydrogen fluoride gas on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by using a low-pressure chemical vapor deposition process, patterning, and wrapping patterned silicon dioxide or doping carbon dioxide; then depositing a silicon oxide film as a second layer to be bonded, and polishing the second layer to be bonded in a chemical mechanical polishing mode to enable the surface of the second layer to be bonded to be flat;
② Depositing polysilicon on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by using a low-pressure chemical vapor deposition process to serve as a second layer to be bonded, and polishing the second layer to be bonded in a chemical mechanical polishing mode to enable the second layer to be bonded to be flat;
Third scheme
S4.3.1 alternately depositing high-acoustic-resistivity reflecting layers and low-acoustic-resistivity reflecting layers on the surface of the first electrode by a thin film deposition technology, and patterning to form a Bragg reflecting layer;
S4.3.2 depositing a silicon oxide film on the surfaces of the piezoelectric layer, the Bragg reflection layer and the first electrode by using a low-pressure chemical vapor deposition process to serve as a second layer to be bonded; polishing the surfaces of the second layer to be bonded and the Bragg reflection layer in a chemical mechanical polishing mode to enable the surface of the second layer to be bonded to be flat;
S5, attaching the substrate containing the first layer to be bonded to the substrate containing the second layer to be bonded, and connecting the substrate and the substrate through a bonding process, so that a compact interface is formed between the first layer to be bonded and the second layer to be bonded and between the first layer to be bonded and the sacrificial layer; wherein, the first layer to be bonded is directly bonded with the second layer to be bonded or metal is deposited on the surfaces of the first layer to be bonded and the second layer to be bonded, and metal bonding is used;
S6, thinning the substrate by adopting a grinding and chemical mechanical polishing mode;
s7, removing the thinned substrate by adopting an etching process;
s8, depositing metal on the surface of the piezoelectric layer by adopting a thermal evaporation or magnetron sputtering method, and patterning to form a second electrode; the second electrode comprises a first electrode part and a second electrode part which are arranged at intervals;
s9 operates in one of two schemes:
s4, when the first scheme or the second scheme is adopted, the following steps are executed:
S9.1.1 forming a first through hole and a second through hole on the surface of the piezoelectric layer by adopting a plasma etching or wet etching process; the first through hole is a first electrode metal PAD filling hole; the second through hole is a sacrificial layer release hole;
s9.1.2 depositing metal on the surface of the piezoelectric layer, the first through hole and the surface of the first electrode part by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process method to form a first metal PAD part, wherein the first metal PAD part is not connected with the second electrode part; depositing metal on the surface of the piezoelectric layer and the surface of the electrode part II by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process method to form a metal PAD part II;
S9.1.3 removing the sacrificial layer by using the second through hole through a wet etching process or a dry etching process to form a first cavity;
s4, when the third scheme is adopted, executing the following steps:
S9.2.1 forming a first through hole on the surface of the piezoelectric layer by adopting a plasma etching or wet etching process; the first through hole is a first electrode metal PAD filling hole;
S9.2.2 depositing metal on the surface of the piezoelectric layer, the first through hole and the surface of the first electrode part by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process method to form a first metal PAD part, wherein the first metal PAD part is not connected with the second electrode part; and depositing metal on the surfaces of the piezoelectric layer and the electrode part II by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process method to form a metal PAD part II.
2. The method of manufacturing a single crystal thin film bulk acoustic resonator using an improved process as claimed in claim 1, wherein: the substrate and the base are made of one or more of glass, silicon carbide, silicon nitride or ceramic according to any proportion.
3. The method of manufacturing a single crystal thin film bulk acoustic resonator using an improved process as claimed in claim 1, wherein: the piezoelectric layer is made of one or more of monocrystalline aluminum nitride, polycrystalline aluminum nitride, zinc oxide, monocrystalline lithium tantalate, lead zirconate titanate and lithium niobate, and the thickness is 10nm-4000nm.
4. The method of manufacturing a single crystal thin film bulk acoustic resonator using an improved process as claimed in claim 1, wherein: the first electrode is made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum, and is prepared by mixing the materials according to any proportion, wherein the thickness is 50nm-500nm, and the transverse width is 30-600 mu m; the second electrode is made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum, the thickness is 50nm-500nm, and the transverse width of the second electrode is 20-500 mu m.
5. The method of manufacturing a single crystal thin film bulk acoustic resonator using an improved process as claimed in claim 1, wherein: the material of the sacrificial layer is one or two of polysilicon, amorphous silicon, silicon dioxide and doped carbon dioxide, which are combined according to any proportion; the thickness of the sacrificial layer is 0.5-3 mu m, and the transverse width is 20-500 mu m; the high-acoustic-resistivity reflecting layer material of the Bragg reflecting layer is silicon carbide, aluminum nitride, silicon nitride, molybdenum, gold, platinum or tungsten; the low-acoustic-resistivity reflecting layer material of the Bragg reflecting layer is silicon dioxide, silicon oxycarbide, aluminum, borosilicate glass or polyphenylene polymer; the Bragg reflection layer has a thickness of 0.5-5 μm and a lateral width of 20-500 μm.
6. The method of manufacturing a single crystal thin film bulk acoustic resonator using an improved process as claimed in claim 1, wherein: the cross sections of the first through hole and the second through hole are round, ladder-shaped, triangular, rectangular or square; when the cross sections of the first through hole and the second through hole are circular, the diameters are all in the range of 5um-50um, and when the cross sections are ladder-shaped, triangular, rectangular or square, the diameters of the circumscribed circles are all in the range of 5um-50 um.
7. The method of manufacturing a single crystal thin film bulk acoustic resonator using an improved process as claimed in claim 1, wherein: the first metal PAD part and the second metal PAD part are made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum in any proportion; the thickness of the first metal PAD part and the second metal PAD part is 10nm-5000nm.
8. The method of manufacturing a single crystal thin film bulk acoustic resonator using an improved process as claimed in claim 1, wherein: the section of the sacrificial layer and the first cavity is round, oval, ladder-shaped, triangular, rectangular or square, the depth of the first cavity is 0.5-3 mu m, and the transverse width of the first cavity is 20-500 mu m.
9. A method of producing a filter using the method of any one of claims 1 to 8, characterized in that: the method comprises the following steps:
The first scheme is as follows:
The single crystal film bulk acoustic resonators are built into a ladder-type filter circuit, each ladder of the ladder-type filter circuit is composed of two single crystal film bulk acoustic resonators, one single crystal film bulk acoustic resonator is arranged in series, and the other single crystal film bulk acoustic resonator is arranged in parallel;
The second scheme is as follows:
The four single crystal film bulk acoustic resonators are built into a cross filter circuit, the first single crystal film bulk acoustic resonator is connected with the second single crystal film bulk acoustic resonator in series, the third single crystal film bulk acoustic resonator and the fourth single crystal film bulk acoustic resonator form a fork-shaped arrangement, one end of the fork shape is connected with two ends of the first single crystal film bulk acoustic resonator, and the other end of the fork shape is connected with two ends of the second single crystal film bulk acoustic resonator;
third scheme:
the ladder-type filter circuit and the cross-type resonator circuit are connected in series to construct a hybrid filter.
10. A method of preparing a filter according to claim 9, wherein: when the two single crystal film bulk acoustic resonators are connected in series, the passivation material layer is positioned between the piezoelectric layers, the first layer to be bonded and the second layer to be bonded of the two single crystal film bulk acoustic resonators; when the two single crystal film bulk acoustic resonators are connected in parallel, the passivation material layer is positioned between the piezoelectric layers of the two single crystal film bulk acoustic resonators; the passivation material layer is one or more of silicon dioxide, silicon nitride and aluminum nitride, ta 2O5, polyimide and benzocyclobutene according to any proportion.
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| CN114499440A (en) * | 2021-12-24 | 2022-05-13 | 河源市艾佛光通科技有限公司 | Single crystal film bulk acoustic resonator and preparation method and application thereof |
| CN115001426B (en) * | 2022-04-26 | 2024-05-17 | 浙江大学杭州国际科创中心 | Preparation method of film bulk acoustic resonator based on multiple bonding processes |
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| CN117254784B (en) * | 2023-11-13 | 2024-03-26 | 广州市艾佛光通科技有限公司 | Thin film bulk acoustic resonator and preparation method of metal electrode thereof |
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| CN111654258A (en) * | 2020-06-23 | 2020-09-11 | 北京航天微电科技有限公司 | Method for manufacturing film bulk acoustic resonator, film bulk acoustic resonator and filter |
| CN112803910A (en) * | 2020-12-29 | 2021-05-14 | 杭州电子科技大学 | Preparation method of single crystal film bulk acoustic resonator |
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| CN111654258A (en) * | 2020-06-23 | 2020-09-11 | 北京航天微电科技有限公司 | Method for manufacturing film bulk acoustic resonator, film bulk acoustic resonator and filter |
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