CN113489467A - Method for preparing single crystal film bulk acoustic resonator and filter by improved process - Google Patents
Method for preparing single crystal film bulk acoustic resonator and filter by improved process Download PDFInfo
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- CN113489467A CN113489467A CN202110753183.4A CN202110753183A CN113489467A CN 113489467 A CN113489467 A CN 113489467A CN 202110753183 A CN202110753183 A CN 202110753183A CN 113489467 A CN113489467 A CN 113489467A
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The invention discloses a method for preparing a single crystal film bulk acoustic resonator and a single crystal film bulk acoustic filter by adopting an improved process. Depositing a first layer to be bonded on the surface of one side of a substrate; depositing a piezoelectric layer on one side surface of the substrate; depositing a first electrode on the surface of the piezoelectric layer; and depositing a second layer to be bonded on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode, or depositing a second layer to be bonded on the surfaces of the piezoelectric layer, the Bragg reflection layer and the first electrode, and attaching the substrate containing the first layer to be bonded and the substrate containing the second layer to be bonded by using a bonding process to obtain a device with a compact bonding interface, so that the problems of device collapse, bonding debonding and the like caused by the existence of gaps in interface bonding in the subsequent thinning process of the substrate on the back of the thin film bulk acoustic resonator device are solved.
Description
Technical Field
The invention relates to a film bulk acoustic resonator, in particular to a method for preparing a single crystal film bulk acoustic resonator and a single crystal film bulk acoustic filter by adopting an improved process.
Background
With the rapid development of mobile communication technology, the market demand for high-band resonators and filters is increasing. Compared with the traditional microwave ceramic resonator and surface acoustic wave resonator, the Film Bulk Acoustic Resonator (FBAR) has the advantages of small volume, low loss, high quality factor, large power capacity, high resonant frequency and the like, so that the FBAR has wide application prospect in the related fields, particularly in the aspect of high-frequency communication, and becomes a hot research in the industry and academia.
The film bulk acoustic resonator is a main constituent unit of a film bulk acoustic filter, and the basic structure of the film bulk acoustic resonator is a sandwich piezoelectric oscillator in which a piezoelectric film layer is sandwiched by two layers of metal electrodes.
The thickness of the piezoelectric film layer determines the working frequency of the bulk acoustic wave resonator, and the quality of the film layer determines the performance of the resonator, such as Q value, electromechanical coupling coefficient, FOM value and the like. At present, mainstream piezoelectric films such as ZnO, AlN and the like are all prepared in a magnetron sputtering mode, are polycrystalline piezoelectric films, and have good film quality only when the thickness of the polycrystalline piezoelectric films is more than 500nm, so that the working frequency of the bulk acoustic wave resonator is not high. On the other hand, the defects in the polycrystalline film are more, which causes the loss of the BAW resonator to be larger and the Q value to be difficult to promote. With the progress of the film preparation technology and equipment, the preparation technology of the single crystal piezoelectric film is more and more mature, and the single crystal piezoelectric film has good crystal quality and few defects, so that the BAW resonator with higher frequency and Q value can be prepared, and has attracted extensive interest in scientific research and industry. However, the preparation process of the single crystal thin film BAW device is relatively difficult, and especially how to ensure that the front single crystal piezoelectric layer is not damaged in the substrate thinning process, so that a proper bonding process needs to be developed to realize the preparation of the single crystal thin film bulk acoustic resonator.
Disclosure of Invention
The invention aims to obtain a device with a compact bonding interface by using a bonding process, so that the problems of device collapse, bonding release and the like caused by the existence of gaps in interface combination in the subsequent thinning process of the back substrate of the film bulk acoustic resonator device are solved, and the formation of parasitic capacitance in the subsequent preparation process of the device can be avoided by using the bonding process.
The invention is realized by adopting the following technical scheme:
the invention discloses a method for preparing a single crystal film bulk acoustic resonator by adopting an improved process, which comprises the following specific steps:
s1 ultrasonic water washing is carried out on the substrate and the basement by using acetone and isopropanol; then depositing a layer I to be bonded on the surface of one side of the substrate;
s2 depositing a piezoelectric layer on one side surface of the substrate;
s3, depositing metal on the surface of the piezoelectric layer, and patterning to form a first electrode;
s4 operates according to one of three schemes:
first scheme
S4.1.1, depositing polycrystalline silicon or amorphous silicon on the surface of the first electrode by adopting a plasma chemical vapor deposition process, and patterning the polycrystalline silicon or amorphous silicon to be used as a sacrificial layer;
s4.1.2 depositing a silicon oxide film on the piezoelectric layer, the sacrificial layer and the first electrode surface by low pressure chemical vapor deposition process to serve as the second layer to be bonded, and flattening the second layer to be bonded by chemical mechanical polishing.
Second embodiment
S4.2.1 depositing silicon dioxide or doped carbon dioxide on the surface of the first electrode by plasma chemical vapor deposition process, and patterning to serve as a sacrificial layer;
s4.2.2 operate in one of two scenarios:
depositing hydrofluoric acid or hydrogen fluoride gas corrosion resistant film (such as AlN and Al) on the piezoelectric layer, the sacrificial layer and the first electrode surface by low pressure chemical vapor deposition2O3A film) and patterned to encapsulate the patterned silica or doped carbon dioxide; and then depositing a silicon oxide film as a second layer to be bonded, and polishing the second layer to be bonded by adopting a chemical mechanical grinding mode to ensure that the surface of the second layer to be bonded is smooth.
Depositing polysilicon on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by using a low-pressure chemical vapor deposition process to serve as a second layer to be bonded, and polishing the second layer to be bonded by adopting a chemical mechanical grinding mode to enable the surface of the second layer to be bonded to be flat.
Third embodiment
S4.3.1 alternately depositing high acoustic impedance rate reflecting layer and low acoustic impedance rate reflecting layer on the surface of the first electrode by thin film deposition technology, and patterning to form Bragg reflecting layer;
s4.3.2 depositing silicon oxide film on the piezoelectric layer, Bragg reflector and first electrode surface by low pressure chemical vapor deposition process as the second layer to be bonded. And then polishing the surface of the second layer to be bonded and the surface of the Bragg reflection layer in a chemical mechanical grinding mode to enable the surface of the second layer to be bonded to be flat.
S5, attaching a substrate containing a first layer to be bonded to a substrate containing a second layer to be bonded, and connecting the substrate containing the first layer to be bonded to the substrate containing the second layer to be bonded through a bonding process, so that a dense interface is formed by the first layer to be bonded, the second layer to be bonded and the sacrificial layer; and the first layer to be bonded and the second layer to be bonded are directly bonded or metal is deposited on the surfaces of the first layer to be bonded and the second layer to be bonded, and the metal is used for bonding.
S6, thinning the substrate by adopting a grinding and chemical mechanical polishing mode;
s7, removing the thinned substrate by adopting an etching process;
s8, depositing metal on the surface of the piezoelectric layer by adopting a thermal evaporation or magnetron sputtering method, and patterning to form a second electrode; the second electrode comprises a first electrode part and a second electrode part which are arranged at intervals.
S9 operates according to one of two schemes:
s4, when the first or second scheme is adopted, executing the following steps:
s9.1.1 forming a first through hole and a second through hole on the surface of the piezoelectric layer by plasma etching or wet etching; the first through hole is a first electrode metal PAD filling hole; the second through hole is a sacrificial layer release hole;
s9.1.2 depositing metal on the surface of the piezoelectric layer, the first through hole and the first electrode part by thermal evaporation or magnetron sputtering method, and patterning by metal stripping process to form a first metal PAD part which is not connected with the second electrode part; depositing metal on the surface of the piezoelectric layer and the surface of the electrode part II by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process to form a metal PAD part II;
s9.1.3 removing the sacrificial layer by the second through hole through a wet etching process or a dry etching process to form a first cavity;
when the third scheme is adopted in S4, the following steps are performed:
s9.2.1 forming a first through hole on the surface of the piezoelectric layer by plasma etching or wet etching; the first through hole is a first electrode metal PAD filling hole;
s9.2.2 depositing metal on the surface of the piezoelectric layer, the first through hole and the first electrode part by thermal evaporation or magnetron sputtering method, and patterning by metal stripping process to form a first metal PAD part which is not connected with the second electrode part; depositing metal on the surface of the piezoelectric layer and the surface of the electrode part II by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process to form a metal PAD part II;
preferably, the substrate and the base are made of one or more of glass, silicon carbide, silicon nitride or ceramic in any proportion.
Preferably, the piezoelectric layer is made of one or more of single crystal aluminum nitride, polycrystalline aluminum nitride, zinc oxide, single crystal lithium tantalate, lead zirconate titanate and lithium niobate in any proportion, and the thickness of the piezoelectric layer is 10nm-4000 nm.
Preferably, the first electrode is made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum in any proportion, the thickness is 50nm-500nm, and the transverse width is 30-600 μm; the second electrode is made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum in any proportion, the thickness of the second electrode is 50nm-500nm, and the transverse width of the second electrode is 20-500 mu m.
Preferably, the sacrificial layer is made of one or two of polysilicon, amorphous silicon, silicon dioxide and doped carbon dioxide according to any proportion; the thickness of the sacrificial layer is 0.5-3 μm, and the transverse width is 20-500 μm; the Bragg reflection layer is made of silicon carbide, aluminum nitride, silicon nitride, molybdenum, gold, platinum or tungsten as a high-acoustic-impedance-rate reflection layer material; the Bragg reflection layer is made of silicon dioxide, silicon oxycarbide, aluminum, borosilicate glass or polyphenylene polymer; the Bragg reflection layer has a thickness of 0.5-5 μm and a lateral width of 20-500 μm.
Preferably, the cross sections of the first through hole and the second through hole are circular, trapezoidal, triangular, rectangular or square; when the cross sections of the first through hole and the second through hole are circular, the diameters of the first through hole and the second through hole are all values within the range of 5um-50um, and when the cross sections of the first through hole and the second through hole are trapezoidal, triangular, rectangular or square, the diameters of the circumscribed circles are all values within the range of 5um-50 um.
Preferably, the material of the first metal PAD part and the second metal PAD part is one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum in any proportion; the thickness of the first metal PAD part and the second metal PAD part is 10nm-5000 nm.
Preferably, the sacrificial layer and the first cavity have a circular, elliptical, trapezoidal, triangular, rectangular or square cross section, the depth of the first cavity is 0.5-3 μm, and the lateral width is 20-500 μm.
The method for preparing the filter by adopting the single crystal film bulk acoustic resonator comprises the following specific steps:
the first scheme is as follows:
a plurality of single crystal film bulk acoustic resonators are built into a ladder type filter circuit, each ladder of the ladder type filter circuit is composed of two single crystal film bulk acoustic resonators, one is arranged in series, and the other is arranged in parallel.
The second scheme is as follows:
four single crystal film bulk acoustic resonators are built into a cross type filter circuit, a first single crystal film bulk acoustic resonator is connected with a second single crystal film bulk acoustic resonator in series, a third single crystal film bulk acoustic resonator and a fourth single crystal film bulk acoustic resonator form a fork type arrangement, one end of the fork type is connected with two ends of the first single crystal film bulk acoustic resonator, and the other end of the fork type is connected with two ends of the second single crystal film bulk acoustic resonator;
in the third scheme:
the ladder type filter circuit and the cross type resonator circuit are connected in series to form a hybrid type filter.
Preferably, when two single crystal film bulk acoustic resonators are connected in series, the two resonators are passivatedThe material layer is arranged between the piezoelectric layers of the two single crystal film bulk acoustic resonators, the layer I to be bonded and the layer II to be bonded; when the two single crystal film bulk acoustic resonators are connected in parallel, the passivation material layer is positioned in the middle of the piezoelectric layers of the two single crystal film bulk acoustic resonators; the passivation material layer is silicon dioxide, silicon nitride, aluminum nitride, Ta2O5One or more of polyimide and benzocyclobutene are combined according to any proportion.
The invention has the following beneficial effects:
according to the invention, the CMP treatment is carried out on the interface to be bonded, and then the device with a compact bonded interface is obtained in a bonding mode, so that the conditions of collapse and bonding release of the device in the subsequent substrate thinning process are avoided, the performance of the device is improved, and the film bulk acoustic resonator with high frequency and high Q value can be prepared. The method is particularly suitable for preparing the single crystal film bulk acoustic resonator, and provides a method for preparing the single crystal FBAR with better performance.
Drawings
FIG. 1 is a cross-sectional view of the present invention for preparing a first layer to be bonded on a substrate.
Fig. 2 is a cross-sectional view of a piezoelectric layer obtained on a substrate.
Fig. 3 is a cross-sectional view of a metal electrode fabricated on the structure of fig. 2.
Fig. 4 is a cross-sectional view of a sacrificial layer fabricated on the structure of fig. 3.
Fig. 5 is a cross-sectional view of a second layer to be bonded on the structure of fig. 4 and a chemical mechanical polishing process is performed.
Fig. 6 is a cross-sectional view of the structure of fig. 1 and the structure of fig. 5 formed by bonding.
Fig. 7 is a cross-sectional view of thinning the substrate on the structure of fig. 6.
Fig. 8 is a cross-sectional view of the substrate removed from the structure of fig. 7.
Fig. 9 is a cross-sectional view of a metal electrode fabricated on the structure of fig. 8.
Fig. 10 is a cross-sectional view of a via fabricated on the structure of fig. 9.
Fig. 11 is a cross-sectional view of a metal PAD deposited and patterned on the structure of fig. 10.
Fig. 12 is a cross-sectional view of the fig. 11 structure after removal of the sacrificial layer.
FIG. 13 is a cross-sectional view of a second bonding layer including a Bragg reflection layer after chemical mechanical polishing.
Fig. 14 is a schematic view of a solid-state fabricated film bulk acoustic resonator made by the method of the present invention.
Fig. 15 is a schematic diagram of a ladder-type filter composed of film bulk acoustic resonators.
Fig. 16 is a schematic diagram of a cross type filter composed of film bulk acoustic resonators.
Fig. 17 is a schematic diagram of a hybrid filter composed of film bulk acoustic resonators.
Fig. 18 is a schematic diagram of thin film bulk acoustic resonators connected in series.
FIG. 19 is a schematic diagram of thin film bulk acoustic resonators connected in parallel.
Detailed Description
The invention is further explained below with reference to the drawings and examples.
Example 1:
the method for preparing the single crystal film bulk acoustic resonator by adopting the improved process comprises the following specific steps:
(1) performing ultrasonic water washing on both the substrate 100 and the base 200 using acetone and isopropanol, wherein the substrate 100 and the base 200 are both (111) or both (100);
(2) as shown in fig. 1, a first layer to be bonded 101 is deposited on one side surface of a substrate 100 by using a low pressure chemical vapor deposition process (LPCVD), and the material of the first layer to be bonded 101 is one or two of silicon oxide and silicon in any ratio, and has a thickness of 0.1-3 μm (preferably 0.5 μm).
(3) As shown in fig. 2, a piezoelectric layer 201 having a crystal orientation along the C axis (crystal axis) is deposited on one side surface of a substrate 200 to a thickness of 10nm to 4000nm by a Metal Organic Chemical Vapor Deposition (MOCVD).
(4) As shown in fig. 3, metallic molybdenum with a thickness of 250nm is deposited on the surface of the piezoelectric layer 201 by thermal evaporation or magnetron sputtering, and is patterned by plasma or wet etching to form a first electrode 202, and the lateral width of the first electrode 202 is 30-600 μm (preferably 300 μm).
(5) As shown in fig. 4, an amorphous silicon thin film with a thickness of 3 μm is deposited on the surface of the first electrode 202 by using a plasma chemical vapor deposition process, and is patterned by using a plasma or wet etching method to form a sacrificial layer 203, wherein the lateral width of the sacrificial layer 203 is 20-500 μm (preferably 200 μm).
(6) As shown in fig. 5, a second layer 204 to be bonded is deposited on the surfaces of the piezoelectric layer 201, the sacrificial layer 203 and the first electrode 202 by using a Low Pressure Chemical Vapor Deposition (LPCVD) process, and the surface of the second layer 204 to be bonded is planarized by using a chemical mechanical polishing method, wherein the final thickness of the second layer 204 to be bonded is 2-3 μm (preferably 2.5 μm). Wherein, the material of the layer II 204 to be bonded is one or two of silicon oxide and silicon which are combined according to any proportion, and the thickness is 4 μm.
(7) As shown in fig. 6, a substrate 100 containing a first layer to be bonded and a substrate 200 containing a second layer to be bonded are attached, and are connected through a bonding process at 350 ℃, so that a dense interface 205 is formed between the first layer to be bonded 101, the second layer to be bonded 204 and the sacrificial layer 203; and the first layer to be bonded and the second layer to be bonded are directly bonded or metal is deposited on the surfaces of the first layer to be bonded and the second layer to be bonded, and the metal is used for bonding.
(8) As shown in fig. 7, the substrate 200 is thinned by grinding and chemical mechanical polishing, and the final remaining substrate thickness is 5-20 μm (preferably 10 μm).
(9) As shown in fig. 8, the thinned substrate is removed using a plasma etch process.
(10) As shown in fig. 9, metal molybdenum with a thickness of 170nm is deposited on the surface of the piezoelectric layer 201 by using a thermal evaporation or magnetron sputtering method, and is patterned by using a plasma or wet etching method to form a second electrode; the second electrode comprises a first electrode part 206-1 and a second electrode part 206-2 which are arranged at intervals; the lateral width of the second electrode (the lateral width between the two back-facing surfaces of electrode portion one 206-1 and electrode portion two 206-2) is 20-500 μm (preferably 180 μm).
(11) As shown in fig. 10, a first through hole 207-1 and a second through hole 207-2 are formed on the surface of the piezoelectric layer by using a plasma etching or wet etching process; a first via 207-1 is located at a distance between the first electrode portion 206-1 and the second electrode portion 206-2, and the bottom of the first via 207-1 is opened on the surface of the first electrode 202 to fill a metal PAD of the first electrode 202; the bottom of the second through hole 207-2 is opened on the surface of the sacrificial layer 203 and is a sacrificial layer release hole, and the diameters of the first through hole and the second through hole are both within the range of 5-50 um.
(12) As shown in fig. 11, gold is deposited on the surface of the piezoelectric layer 201, the first through hole 207-1 and the first electrode portion 206-1 by a thermal evaporation or magnetron sputtering method, and is patterned by a metal lift-off process to form a first metal PAD portion 208-1, wherein the thickness from the surface of the first metal PAD portion 208-1 to the surface of the piezoelectric layer 201 is 1 μm; depositing gold on the surface of the piezoelectric layer 201 and the surface of the second electrode part 206-2 by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process to form a second metal PAD part 208-2, wherein the thickness from the surface of the second metal PAD part 208-2 to the surface of the piezoelectric layer 201 is 1 mu m; metal PAD portion one 208-1 is not connected to electrode portion two 206-2.
(13) As shown in fig. 12, the sacrificial layer 203 is removed by a wet etching process or a dry etching process using the second via 207-2, forming a first cavity 203-1.
Example 2:
the method for preparing the single crystal film bulk acoustic resonator by adopting the improved process comprises the following specific steps:
the method comprises the following steps: steps (1) to (4) in example 1 were performed.
Step two: as shown in fig. 13, a high acoustic impedance rate reflective layer and a low acoustic impedance rate reflective layer are alternately deposited on the surface of the first electrode 202 by using a thin film deposition technique, and patterned by a plasma etching or wet etching process to form a bragg reflective layer 209 having a thickness of 0.5 to 5 μm (preferably 3 μm) and a lateral width of 20 to 500 μm (preferably 200 μm).
Step three: as shown in fig. 13, a second layer 204 to be bonded is deposited on the surfaces of the piezoelectric layer 201, the bragg reflector 209 and the first electrode 202 by using a Low Pressure Chemical Vapor Deposition (LPCVD) process, and the second layer 204 to be bonded is planarized by using a chemical mechanical polishing method, wherein the final thickness of the second layer 204 to be bonded is 2-3 μm (preferably 2.5 μm).
Step four: as shown in fig. 14, steps (7) to (10) in embodiment 1 are performed; then, forming a first through hole 207-1 on the surface of the piezoelectric layer by adopting a plasma etching or wet etching process; the first via 207-1 is located at a distance between the first electrode portion 206-1 and the second electrode portion 206-2, and the bottom of the first via 207-1 is opened on the surface of the first electrode 202 to fill a metal PAD of the first electrode 202, and the diameter of the first via is within a range of 5um to 50 um.
Step five: step (12) in example 1 was performed.
Example 3:
the method for preparing the filter by using the single crystal thin film bulk acoustic resonator of the embodiment 1 or 2 includes the following steps:
as shown in fig. 15, a ladder type filter circuit is built using a plurality of single crystal thin film bulk acoustic resonators, and each ladder of the ladder type filter circuit is composed of two single crystal thin film bulk acoustic resonators, one of which is arranged in series and the other of which is arranged in parallel. The ladder-type filter circuit adds "ladders" that enhance the ability to reject interfering frequencies, making the ladder-type filter circuit produce better out-of-band attenuation (with steeper skirt curves), but based on insertion loss and more power consumption.
Example 4:
the method for preparing the filter by using the single crystal thin film bulk acoustic resonator of the embodiment 1 or 2 includes the following steps:
as shown in fig. 16, a cross filter circuit is built by using four single crystal film bulk acoustic resonators, a first single crystal film bulk acoustic resonator is connected in series with a second single crystal film bulk acoustic resonator, a third single crystal film bulk acoustic resonator and a fourth single crystal film bulk acoustic resonator form a fork-shaped arrangement, one end of the fork-shaped arrangement is connected with two ends of the first single crystal film bulk acoustic resonator, and the other end of the fork-shaped arrangement is connected with two ends of the second single crystal film bulk acoustic resonator; the skirt curve of the modeling filter is too gentle, and the attenuation outside the band is not good.
Example 5:
as shown in fig. 17, a hybrid filter was constructed by connecting the ladder-type filter circuit of example 4 and the cross resonator circuit of example 5 in series, and the filter had a steep skirt curve and good out-of-band attenuation.
The two single crystal film bulk acoustic resonators are connected in series in a manner that a metal PAD portion one 208-1 of one single crystal film bulk acoustic resonator and a metal PAD portion two 208-2 of the other single crystal film bulk acoustic resonator are connected to form a metal PAD208, the metal PAD208 connects an electrode portion one 206-1 of one single crystal film bulk acoustic resonator and an electrode portion two 206-2 of the other single crystal film bulk acoustic resonator, as shown in fig. 18, and the independent metal PAD portion one 208-1 of one single crystal film bulk acoustic resonator and the independent metal PAD portion two 208-2 of the other single crystal film bulk acoustic resonator are used as two new electrodes after the two single crystal film bulk acoustic resonators are connected in series. The passivation material layer 103 is located between the piezoelectric layer 201 of the two single crystal film bulk acoustic resonators, the first layer to be bonded 101, and the second layer to be bonded 204, and plays a role in isolation.
The two single crystal film bulk acoustic resonators are connected in parallel in a manner that the metal PAD portions two 208-2 of the two single crystal film bulk acoustic resonators are connected to form a metal PAD208, the metal PAD208 connects the electrode portions two 206-2 of the two single crystal film bulk acoustic resonators, and the metal PAD portions one 208-1 of the two single crystal film bulk acoustic resonators are used as two new electrodes after the two single crystal film bulk acoustic resonators are connected in parallel, as shown in fig. 19; or the two single crystal film bulk acoustic resonators are connected in parallel in a mode that metal PAD parts one 208-1 of the two single crystal film bulk acoustic resonators are connected to form a metal PAD208, the metal PAD208 connects electrode parts one 206-1 of the two single crystal film bulk acoustic resonators, and metal PAD parts two 208-2 of the two single crystal film bulk acoustic resonators serve as two new electrodes after the two single crystal film bulk acoustic resonators are connected in parallel. Wherein the passivation material layer 103 is located between the piezoelectric layers 201 of the two single crystal thin film bulk acoustic resonators, and isolates the piezoelectric layers 201 of the two single crystal thin film bulk acoustic resonators.
Claims (10)
1. The method for preparing the single crystal film bulk acoustic resonator by adopting the improved process is characterized by comprising the following steps of: the method comprises the following specific steps:
s1 ultrasonic water washing is carried out on the substrate and the basement by using acetone and isopropanol; then depositing a layer I to be bonded on the surface of one side of the substrate;
s2 depositing a piezoelectric layer on one side surface of the substrate;
s3, depositing metal on the surface of the piezoelectric layer, and patterning to form a first electrode;
s4 operates according to one of three schemes:
first scheme
S4.1.1, depositing polycrystalline silicon or amorphous silicon on the surface of the first electrode by adopting a plasma chemical vapor deposition process, and patterning the polycrystalline silicon or amorphous silicon to be used as a sacrificial layer;
s4.1.2 depositing a silicon oxide film on the piezoelectric layer, the sacrificial layer and the first electrode surface by low pressure chemical vapor deposition process to serve as a second layer to be bonded, and flattening the surface of the second layer to be bonded by chemical mechanical polishing;
second embodiment
S4.2.1 depositing silicon dioxide or doped carbon dioxide on the surface of the first electrode by plasma chemical vapor deposition process, and patterning to serve as a sacrificial layer;
s4.2.2 operate in one of two scenarios:
depositing a film which resists the corrosion of hydrofluoric acid or hydrogen fluoride gas on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by using a low-pressure chemical vapor deposition process, and patterning the film to wrap patterned silicon dioxide or doped carbon dioxide; then depositing a silicon oxide film as a second layer to be bonded, and polishing the second layer to be bonded by adopting a chemical mechanical grinding mode to ensure that the surface of the second layer to be bonded is smooth;
depositing polycrystalline silicon on the surfaces of the piezoelectric layer, the sacrificial layer and the first electrode by using a low-pressure chemical vapor deposition process to serve as a second layer to be bonded, and polishing the second layer to be bonded by adopting a chemical mechanical grinding mode to enable the surface of the second layer to be bonded to be flat;
third embodiment
S4.3.1 alternately depositing high acoustic impedance rate reflecting layer and low acoustic impedance rate reflecting layer on the surface of the first electrode by thin film deposition technology, and patterning to form Bragg reflecting layer;
s4.3.2 depositing a silicon oxide film on the piezoelectric layer, Bragg reflector and first electrode surface by low pressure chemical vapor deposition process to serve as a second layer to be bonded; polishing the surface of the second layer to be bonded and the surface of the Bragg reflection layer in a chemical mechanical grinding mode to enable the surface of the second layer to be bonded to be flat;
s5, attaching a substrate containing a first layer to be bonded to a substrate containing a second layer to be bonded, and connecting the substrate containing the first layer to be bonded to the substrate containing the second layer to be bonded through a bonding process, so that a dense interface is formed by the first layer to be bonded, the second layer to be bonded and the sacrificial layer; the first layer to be bonded and the second layer to be bonded are directly bonded or metal is deposited on the surfaces of the first layer to be bonded and the second layer to be bonded, and the first layer to be bonded and the second layer to be bonded are bonded by using the metal;
s6, thinning the substrate by adopting a grinding and chemical mechanical polishing mode;
s7, removing the thinned substrate by adopting an etching process;
s8, depositing metal on the surface of the piezoelectric layer by adopting a thermal evaporation or magnetron sputtering method, and patterning to form a second electrode; the second electrode comprises a first electrode part and a second electrode part which are arranged at intervals;
s9 operates according to one of two schemes:
s4, when the first or second scheme is adopted, executing the following steps:
s9.1.1 forming a first through hole and a second through hole on the surface of the piezoelectric layer by plasma etching or wet etching; the first through hole is a first electrode metal PAD filling hole; the second through hole is a sacrificial layer release hole;
s9.1.2 depositing metal on the surface of the piezoelectric layer, the first through hole and the first electrode part by thermal evaporation or magnetron sputtering method, and patterning by metal stripping process to form a first metal PAD part which is not connected with the second electrode part; depositing metal on the surface of the piezoelectric layer and the surface of the electrode part II by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process to form a metal PAD part II;
s9.1.3 removing the sacrificial layer by the second through hole through a wet etching process or a dry etching process to form a first cavity;
when the third scheme is adopted in S4, the following steps are performed:
s9.2.1 forming a first through hole on the surface of the piezoelectric layer by plasma etching or wet etching; the first through hole is a first electrode metal PAD filling hole;
s9.2.2 depositing metal on the surface of the piezoelectric layer, the first through hole and the first electrode part by thermal evaporation or magnetron sputtering method, and patterning by metal stripping process to form a first metal PAD part which is not connected with the second electrode part; and depositing metal on the surface of the piezoelectric layer and the surface of the electrode part II by adopting a thermal evaporation or magnetron sputtering method, and patterning by adopting a metal stripping process to form a metal PAD part II.
2. The method for manufacturing a single crystal thin film bulk acoustic resonator according to claim 1, wherein the method comprises: the substrate and the base are made of one or more of glass, silicon carbide, silicon nitride or ceramic according to any proportion.
3. The method for manufacturing a single crystal thin film bulk acoustic resonator according to claim 1, wherein the method comprises: the piezoelectric layer is made of one or more of single crystal aluminum nitride, polycrystalline aluminum nitride, zinc oxide, single crystal lithium tantalate, lead zirconate titanate and lithium niobate according to any proportion, and the thickness of the piezoelectric layer is 10nm-4000 nm.
4. The method for manufacturing a single crystal thin film bulk acoustic resonator according to claim 1, wherein the method comprises: the first electrode is made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum in any proportion, the thickness is 50nm-500nm, and the transverse width is 30-600 mu m; the second electrode is made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum in any proportion, the thickness of the second electrode is 50nm-500nm, and the transverse width of the second electrode is 20-500 mu m.
5. The method for manufacturing a single crystal thin film bulk acoustic resonator according to claim 1, wherein the method comprises: the sacrificial layer is made of one or two of polycrystalline silicon, amorphous silicon, silicon dioxide and doped carbon dioxide according to any proportion; the thickness of the sacrificial layer is 0.5-3 μm, and the transverse width is 20-500 μm; the Bragg reflection layer is made of silicon carbide, aluminum nitride, silicon nitride, molybdenum, gold, platinum or tungsten as a high-acoustic-impedance-rate reflection layer material; the Bragg reflection layer is made of silicon dioxide, silicon oxycarbide, aluminum, borosilicate glass or polyphenylene polymer; the Bragg reflection layer has a thickness of 0.5-5 μm and a lateral width of 20-500 μm.
6. The method for manufacturing a single crystal thin film bulk acoustic resonator according to claim 1, wherein the method comprises: the cross sections of the first through hole and the second through hole are circular, trapezoidal, triangular, rectangular or square; when the cross sections of the first through hole and the second through hole are circular, the diameters of the first through hole and the second through hole are all values within the range of 5um-50um, and when the cross sections of the first through hole and the second through hole are trapezoidal, triangular, rectangular or square, the diameters of the circumscribed circles are all values within the range of 5um-50 um.
7. The method for manufacturing a single crystal thin film bulk acoustic resonator according to claim 1, wherein the method comprises: the first metal PAD part and the second metal PAD part are made of one or more of copper, aluminum, silver, titanium, tungsten, gold, nickel and molybdenum according to any proportion; the thickness of the first metal PAD part and the second metal PAD part is 10nm-5000 nm.
8. The method for manufacturing a single crystal thin film bulk acoustic resonator according to claim 1, wherein the method comprises: the cross sections of the sacrificial layer and the first cavity are circular, oval, trapezoidal, triangular, rectangular or square, the depth of the first cavity is 0.5-3 mu m, and the transverse width of the first cavity is 20-500 mu m.
9. A method for manufacturing a filter using the single crystal thin film bulk acoustic resonator of any one of claims 1 to 8, characterized in that: the method comprises the following specific steps:
the first scheme is as follows:
a plurality of single crystal film bulk acoustic resonators are built into a ladder type filter circuit, each ladder of the ladder type filter circuit is composed of two single crystal film bulk acoustic resonators, one is arranged in series, and the other is arranged in parallel;
the second scheme is as follows:
four single crystal film bulk acoustic resonators are built into a cross type filter circuit, a first single crystal film bulk acoustic resonator is connected with a second single crystal film bulk acoustic resonator in series, a third single crystal film bulk acoustic resonator and a fourth single crystal film bulk acoustic resonator form a fork type arrangement, one end of the fork type is connected with two ends of the first single crystal film bulk acoustic resonator, and the other end of the fork type is connected with two ends of the second single crystal film bulk acoustic resonator;
in the third scheme:
the ladder type filter circuit and the cross type resonator circuit are connected in series to form a hybrid type filter.
10. The method for manufacturing a filter of the single crystal thin film bulk acoustic resonator of claim 9, wherein: when the two single crystal film bulk acoustic resonators are connected in series, the passivation material layer is positioned between the piezoelectric layers of the two single crystal film bulk acoustic resonators, the first layer to be bonded and the second layer to be bonded; when the two single crystal film bulk acoustic resonators are connected in parallel, the passivation material layer is positioned in the middle of the piezoelectric layers of the two single crystal film bulk acoustic resonators; the passivation material layer is silicon dioxide, silicon nitride, aluminum nitride, Ta2O5One or more of polyimide and benzocyclobutene are combined according to any proportion.
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