CN115001426B - Preparation method of film bulk acoustic resonator based on multiple bonding processes - Google Patents
Preparation method of film bulk acoustic resonator based on multiple bonding processes Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 85
- 230000008569 process Effects 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 262
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000011241 protective layer Substances 0.000 claims abstract description 54
- 238000005530 etching Methods 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 238000000151 deposition Methods 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims description 156
- 239000010409 thin film Substances 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000001020 plasma etching Methods 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 238000003958 fumigation Methods 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000032798 delamination Effects 0.000 claims 1
- 239000005416 organic matter Substances 0.000 claims 1
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- -1 organic matters Chemical compound 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a preparation method of a film bulk acoustic resonator based on a multiple bonding process, which comprises the steps of adopting a first wafer bonding method to prepare a first piezoelectric film structure, removing a first substrate, depositing a second electrode on the surface of a piezoelectric film layer, and depositing a sacrificial layer on the surface of the second electrode to obtain a second piezoelectric film structure; a second wafer bonding method is adopted for the second piezoelectric film structure to obtain a third piezoelectric film structure; and thinning the second substrate, opening a window on the thinned second substrate to the surface of the protective layer to obtain a first window, depositing a metal pad layer on the first electrode through the second window, depositing the metal pad layer on the second electrode through the third window, adding an etching solution into the fourth window to etch the sacrificial layer to form a cavity, and obtaining the final film bulk acoustic resonator. The method can avoid the collapse of the piezoelectric film in the preparation process, and improve the yield and performance of the product.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a preparation method of a film bulk acoustic resonator based on a multiple bonding process.
Background
With the rapid development of mobile communication technology, market demands for high-frequency resonators and filters are increasing. A Film Bulk Acoustic Resonator (FBAR) resonator uses a separate bulk acoustic film that is supported only around the edges where it is used. An air cavity is arranged between the bottom electrode and the carrier wafer, and compared with the traditional microwave ceramic resonator and the traditional surface wave resonator, the Film Bulk Acoustic Resonator (FBAR) has the advantages of small volume, low loss, high quality factor, large power capacity, high resonant frequency and the like, has wide application prospect in the related fields, especially in the aspect of high-frequency communication, and becomes a research hot in the industry and academia.
The film bulk acoustic resonator is a main constituent unit of a film bulk acoustic filter, and its basic structure is a sandwich piezoelectric oscillator in which two metal electrodes sandwich a piezoelectric film layer. The thickness of the piezoelectric thin film layer determines the operating frequency of the bulk acoustic wave resonator, and the quality of the thin film layer determines the performance of the resonator, such as Q value, electromechanical coupling coefficient, FOM value, etc.
Currently, main-stream piezoelectric films such as AlN, znO and the like are prepared by adopting a magnetron sputtering mode, and the thicknesses of the main-stream piezoelectric films are more than 500nm, so that the main-stream piezoelectric films have better film quality, and the working frequency of devices is severely limited.
On the other hand, the thin film has many defects, which causes a large loss of the BAW resonator and makes it difficult to raise the Q value. Along with the progress of film preparation technology and equipment, the preparation technology of the piezoelectric film is mature, the piezoelectric film with the advantages of good film quality, few defects and the like can be prepared, and the BAW resonator with higher frequency and Q value can be prepared by means of the piezoelectric film, so that the piezoelectric film has been widely interested in scientific research and industry.
However, the better the quality of the piezoelectric film prepared by the existing piezoelectric film growth process is, the easier the larger film stress is introduced, so that the subsequent bonding process is extremely high in requirement, and the situation that the piezoelectric film is cracked in the transfer process is easily caused, which can seriously affect the product yield. However, under the condition of the existing device structure, the bonding effect is inevitably influenced, the removal amount of the piezoelectric film growth substrate in the mechanical thinning process is finally reduced, excessive etching of the piezoelectric film is easily caused in the plasma etching process by the residual piezoelectric film growth substrate, and the thickness uniformity of the piezoelectric film is influenced, so that the device performance is influenced.
Therefore, there is a need to design a device structure and a manufacturing process to improve the bonding effect of the device and reduce the cracking phenomenon of the piezoelectric film layer.
Disclosure of Invention
The invention provides a preparation method of a film bulk acoustic resonator based on a multiple bonding process, which can avoid the cracking of a piezoelectric film in the preparation process and improve the yield and performance of products.
A preparation method of a film bulk acoustic resonator based on a multiple bonding process comprises the following steps:
(1) Preparing a first piezoelectric film structure by adopting a first wafer bonding method, wherein the first piezoelectric film structure comprises a second substrate layer, an etching barrier layer, a first uniform dense film layer, a protective layer, a first electrode layer, a piezoelectric film layer and a first substrate which are sequentially arranged from top to bottom;
(2) Taking the first piezoelectric film structure, removing the first substrate, depositing a second electrode on the surface of the piezoelectric film layer, and depositing a sacrificial layer on the surface of the second electrode to obtain a second piezoelectric film structure;
(3) A second wafer bonding method is adopted for the second piezoelectric film structure to obtain a third piezoelectric film structure, and the third piezoelectric film structure comprises a second substrate, an etching barrier layer, a first dense film layer, a protective layer, a first electrode layer, a piezoelectric film layer, a second electrode layer, a sacrificial layer, a second dense film layer and a third substrate which are sequentially arranged from top to bottom;
(4) Taking a third piezoelectric film structure, thinning a second substrate, windowing a first window on the thinned second substrate to the surface of a protective layer to obtain a second window, windowing the bottom of the first window to obtain a third window and a fourth window, depositing a metal pad layer on a first electrode through the second window, depositing the metal pad layer on the second electrode through a third window, adding corrosive liquid into the fourth window to corrode the sacrificial layer to form a cavity, and obtaining the first monocrystalline film bulk acoustic resonator;
Taking a third piezoelectric film structure, thinning the second substrate, etching the second substrate to the etching barrier layer on the whole surface, removing the etching barrier layer and the second compact layer, windowing a protective layer to obtain a fifth window, windowing the piezoelectric film layer to obtain a sixth window and a seventh window, depositing a metal pad layer on the first electrode through the fifth window, depositing the metal pad layer on the second electrode through the sixth window, adding corrosive liquid into the seventh window to corrode the sacrificial layer to form a cavity, and obtaining the second film bulk acoustic resonator.
The size of the first window is as follows: 50-50000um
After the third piezoelectric film structure is formed, the second substrate is thinned, and then a window is opened on the surface of the second substrate, so that larger internal stress existing in the piezoelectric film and internal stress generated in the subsequent device preparation process are balanced, the piezoelectric film structure is prevented from being broken due to internal stress change after the sacrificial layer is released, and the integrity of the piezoelectric film is ensured.
The second substrate and the third substrate are structures for preventing the piezoelectric film from cracking and supporting the device, the etching barrier layer is positioned between the second substrate and the first dense film layer, the first dense film layer and the first electrode are prevented from being damaged in the etching process of the second substrate, the first electrode is thickened by the metal Pad, and the device is conveniently tested on line and used as a welding spot for subsequent packaging bonding.
In step (1), a first piezoelectric thin film structure is prepared by a first wafer bonding method, including:
Depositing a piezoelectric film layer on the surface of a first substrate, depositing a first electrode on the surface of the piezoelectric film layer, depositing a protective layer on the surface of the first electrode, and depositing a first layer to be bonded on the surface of the piezoelectric film layer and the surface of the protective layer;
Depositing an etching barrier layer on the surface of the second substrate, and depositing a second layer to be bonded on the surface of the etching barrier layer;
and bonding the first layer to be bonded and the second layer to be bonded through a first wafer bonding transfer method to obtain a first uniform dense film layer, and further obtaining the first piezoelectric film structure.
In the process of the first wafer bonding transfer method, only the first electrode layer is deposited, and then the first layer to be bonded is deposited under the condition of thinner thickness, so that the first layer to be bonded has smaller dishing (dishing) defects, the bonding strength is improved, and the film layer breakage of the piezoelectric film caused by self stress change after the first substrate is removed is reduced. The bonding strength is improved, so that the removal amount of the first substrate is increased in the mechanical thinning process, the residual amount of the first substrate after mechanical thinning can be reduced from 100 mu m to below 10 mu m, and even the first substrate can be completely removed by directly adopting a method of jointly processing mechanical thinning and Chemical Mechanical Polishing (CMP). The smaller the residual quantity of the first substrate is, the shorter the plasma etching time is, the better the thickness uniformity of the obtained piezoelectric film is, and the roughness of the surface after CMP treatment can meet the use requirement of a device under the condition that the piezoelectric film is not broken.
The piezoelectric film layer is fixed on the first substrate by adopting a magnetron sputtering or Metal Organic Chemical Vapor Deposition (MOCVD) method or an ion implantation stripping method, the material of the piezoelectric film layer is single crystal aluminum nitride, polycrystalline aluminum nitride, doped aluminum nitride, liNbO 3 film, liTbO 3 film, quartz film, PZT film or zinc oxide, and the thickness of the piezoelectric film layer is 0.1 mu m-2 mu m.
Depositing an etching barrier layer on the second substrate by adopting a CVD (chemical vapor deposition) or plasma chemical vapor deposition (PECVD) process, wherein the etching barrier layer is made of inorganic matters or organic matters, the inorganic matters are silicon, silicon oxide, silicon nitride, phosphoric acid glass or doped silicon oxide, and the thickness of the etching barrier layer is 0.2-10 mu m.
And carrying out CMP treatment on the first layer to be bonded and the second layer to be bonded before bonding the first layer to be bonded and the second layer to be bonded through a first wafer bonding transfer method, so that the roughness of a bonding surface is lower than 0.5nm. To improve the bonding strength.
Depositing a protective layer on the first electrode layer by CVD or PECVD, forming patterns on the surface of the protective layer by plasma etching or wet etching, wherein the material of the protective layer is silicon oxide or aluminum nitride, the thickness of the protective layer is 10nm-1000nm, and the transverse width is 50-300 mu m (preferably 150 mu m).
In the step (2), a sacrificial layer is deposited by adopting a CVD or PECVD mode, and the material of the sacrificial layer is amorphous silicon, polysilicon, organic matters or phosphoric acid glass.
In the step (3), a second wafer bonding transfer method is adopted for the second piezoelectric film structure to obtain a third piezoelectric film structure, which comprises the following steps:
Depositing a third to-be-bonded layer on the surfaces of the sacrificial layer, the second electrode and the piezoelectric layer of the second piezoelectric film structure;
and depositing a fourth to-be-bonded layer on the surface of the third substrate, and bonding the fourth to-be-bonded layer and the third to-be-bonded layer by a second wafer bonding method to obtain a second compact film layer, thereby obtaining a third piezoelectric film structure.
The sacrificial layer of the required cavity is provided through the second wafer bonding, and support is provided for thinning of the second substrate and the manufacture of the acoustic wave resonator in the next step.
In the step (4), a window is opened at the bottom of the first window to obtain a second window, a third window and a fourth window, which comprises the following steps:
And opening windows from the surface of the protective layer at the bottom of the first window to the first electrode to obtain a second window, opening windows from the surface of the first uniform dense film layer at the bottom of the first window to the second electrode to obtain a third window, and opening windows from the surface of the first uniform dense film layer at the bottom of the first window to the sacrificial layer to obtain a fourth window.
In the step (4), the metal pad layer deposited on the second electrode is not connected with the protective layer.
In the step (4), a metal pad layer is deposited on the first electrode layer or the second electrode layer by adopting a thermal evaporation or magnetron sputtering method.
The material of the metal pad layer is one or any combination of aluminum, gold, platinum, copper, silver, titanium, tungsten and nickel. The thickness of the metal pad layer is 0.2-2 μm. And forming a pattern on the surface of the metal pad layer by using a Lift-off method.
The cavity is formed by removing the sacrificial layer by fumigation and wet etching. The cross section of the cavity is one or any combination of ladder shape, triangle shape and circular arc shape, the depth of the cavity is 0.5-2 μm, and the transverse width is 50-300 μm.
The first substrate, the second substrate or the third substrate is one or any combination of glass, silicon carbide, sapphire, ceramic, plastic and the like.
The material of the first compact film layer or the second compact film layer is one or any combination of silicon, silicon oxide, silicon nitride, organic matters, phosphoric acid glass or doped silicon oxide.
And depositing a first electrode layer or a second electrode layer by adopting a thermal evaporation or magnetron sputtering method, and forming a pattern on the surface of the first electrode layer or the second electrode layer by adopting plasma etching, lift-off or wet etching. The material of the first electrode layer or the second electrode layer is one or any combination of molybdenum, gold, platinum, copper, aluminum, silver, titanium and tungsten. The thickness of the first electrode layer or the second electrode layer is 100nm-300nm, and the transverse width is 50 μm-300 μm.
A thin film bulk acoustic resonator prepared according to a preparation method of a thin film bulk acoustic resonator based on a multiple bonding process.
Compared with the prior art, the invention has the beneficial effects that:
(1) According to the scheme provided by the invention, the window is opened on the thinned second substrate, so that the piezoelectric film is prevented from being broken due to larger change of the internal stress of the piezoelectric film after the sacrificial layer is released under the condition that the piezoelectric film has higher internal stress. In the scheme II provided by the invention, the film bulk acoustic resonator is obtained by directly etching to the protective layer and opening a window on the protective layer, has a smaller half-width piezoelectric film, is easy to improve the subsequent photoetching alignment precision, and is beneficial to the subsequent structural design.
(2) According to the invention, only the first electrode with a thinner thickness is deposited during the first bonding, so that dishing of the first bonding layer after CMP treatment is smaller, the first bonding strength is further improved, and the film layer rupture generated in the transfer process due to the stress change of the piezoelectric film layer when the first substrate is removed in a large amount is avoided.
(3) Compared with the prior art that a transition structure (such as a sacrificial layer and a lower electrode) is further arranged between the piezoelectric film and the first substrate, the piezoelectric film can be prepared in a diversified mode, the preparation mode of the piezoelectric film is prevented from being limited due to the fact that the transition structure and other factors are needed to be considered in the prior art, for example, the piezoelectric film can be prepared at a higher temperature, deposition defects caused by the transition layer can be avoided, and therefore the ultra-small half-width piezoelectric film layer can be prepared.
Drawings
Fig. 1 shows a piezoelectric thin film prepared on a first substrate according to examples 1 and 2, 100 is the first substrate, and 101 is the piezoelectric thin film.
Fig. 2 shows the preparation of the first electrode provided in examples 1 and 2, 100 being a first substrate, 101 being a piezoelectric film, 102 being a first electrode, and 103 being a protective layer.
Fig. 3 is a schematic diagram showing the preparation of a first layer to be bonded according to embodiments 1 and 2, wherein 100 is a first substrate, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, and 104 is a first layer to be bonded.
Fig. 4 is a schematic diagram of preparation of a second to-be-bonded layer according to embodiments 1 and 2, 200 is a second substrate, 201 is an etching stopper, and 202 is a second to-be-bonded layer.
Fig. 5 shows a first bonding in embodiments 1 and 2, 100 is a first substrate, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a second substrate, 201 is an etch stop layer, and 203 is a first dense film layer.
Fig. 6 shows the first substrate thinning provided in embodiments 1 and 2, 100 is a thinned first substrate, 101 is a piezoelectric thin film, 102 is a first electrode, 103 is a protective layer, 200 is a second substrate, 201 is an etching stopper layer, and 203 is a first dense film layer.
Fig. 7 shows the preparation of the second electrode in examples 1 and 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a second substrate, 201 is an etching stopper, 203 is a first dense film, and 204 is a second electrode.
Fig. 8 shows the preparation of the sacrificial layer according to examples 1 and 2, wherein 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a second substrate, 201 is an etching stopper, 203 is a first bonding layer, 204 is a second electrode, and 205 is a sacrificial layer.
Fig. 9 shows a third to-be-bonded layer prepared in embodiments 1 and 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a second substrate, 201 is an etching barrier layer, 203 is a first bonding layer, 204 is a second electrode, 205 is a sacrificial layer, and 206 is a third to-be-bonded layer.
Fig. 10 shows a second bonding in examples 1 and 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a second substrate, 201 is an etching stopper, 203 is a first bonding layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, and 300 is a third substrate.
Fig. 11 shows a second substrate thinning provided in embodiments 1 and 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a thinned second substrate, 201 is an etching stopper, 203 is a first bonding layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, and 300 is a third substrate.
Fig. 12 shows a second substrate window provided in embodiment 1, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a second substrate, 201 is an etching stopper, 203 is a first bonding layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, 207 is a first window, and 300 is a third substrate.
Fig. 13 shows a first electrode window provided in embodiment 1, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a thinned second substrate, 201 is an etching barrier layer, 203 is a first bonding layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, 207 is a first window, 208 is a second window, and 300 is a third substrate.
Fig. 14 shows a second electrode window provided in embodiment 1, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a thinned second substrate, 201 is an etching stop layer, 203 is a first bonding layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, 207 is a first window, 208 is a second window, 209 is a third window, 209-1 is a sacrificial layer release window, and 300 is a third substrate.
Fig. 15 shows a metal PAD preparation of embodiment 1, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a thinned second substrate, 201 is an etching barrier layer, 203 is a first bonding layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, 207 is a first window 209-1 is a sacrificial layer release window, 210 is a metal PAD, and 300 is a third substrate.
Fig. 16 shows a sacrificial layer release structure provided in embodiment 1, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 200 is a thinned second substrate, 201 is an etching barrier layer, 203 is a first bonding layer, 204 is a second electrode, 205-1 is a first cavity formed after the sacrificial layer release, 206-1 is a second bonding layer, 207 is a first window, 209-1 is a sacrificial layer release window, 210 is a metal PAD, and 300 is a third substrate.
Fig. 17 shows the whole surface removal of the second substrate provided in embodiment 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 201 is an etching stopper, 203 is a first dense film layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, and 300 is a third substrate.
Fig. 18 shows the removal of the etching stopper and the first dense film layer provided in embodiment 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, and 300 is a third substrate.
Fig. 19 shows a fifth window formed in the protective layer according to embodiment 2, wherein 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, 210 is a fifth window, and 300 is a third substrate.
Fig. 20 shows a window in a piezoelectric film provided in embodiment 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, 210 is a fifth window, 211 is a sixth window, 211-1 is a sacrificial layer release window, and 300 is a third substrate.
Fig. 21 shows a metal PAD preparation of example 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 204 is a second electrode, 205 is a sacrificial layer, 206-1 is a second bonding layer, 212-1 is a sacrificial layer release window, 209 is a metal PAD, and 300 is a third substrate.
Fig. 22 shows a sacrificial layer release structure provided in embodiment 2, 101 is a piezoelectric film, 102 is a first electrode, 103 is a protective layer, 204 is a second electrode, 205-1 is a first cavity formed after the sacrificial layer release, 206-1 is a second bonding layer 212-1 is a sacrificial layer release window, 209 is a metal PAD, and 300 is a third substrate;
FIG. 23 is an XRD pattern of the piezoelectric thin film obtained in example 1;
fig. 24 is an XRD pattern of the piezoelectric thin film obtained in example 2.
Detailed Description
The invention will be further described with reference to the accompanying drawings and examples.
Example 1:
a preparation method of a film bulk acoustic resonator based on a multiple bonding process comprises the following specific steps:
(1) Ultrasonically cleaning the substrates 100, 200 and 300 by using acetone and isopropanol, wherein the substrates are oriented to be (111) or (100);
(2) As shown in fig. 1, a piezoelectric layer 101 having a crystal orientation along a C-axis (crystal axis) is deposited on a surface of a silicon carbide substrate 100 using a Metal Organic Chemical Vapor Deposition (MOCVD) process; the thickness is 0.1-4 μm.
(3) As shown in fig. 2, a magnetron sputtering method is adopted to deposit a metal molybdenum layer with the thickness of 150nm and an aluminum nitride protective layer with the thickness of 100nm on the surface of a piezoelectric layer 101, and a plasma etching mode is adopted to carry out patterning to form a first electrode 102 and a protective layer 103; the lateral width is 150. Mu.m.
(4) As shown in fig. 3, silicon oxide is deposited on the surfaces of the piezoelectric layer 101 and the protective layer 103 by Chemical Vapor Deposition (CVD) to form a first layer 104 to be bonded; the thickness was 6. Mu.m.
(5) As shown in fig. 4, an etching barrier layer 201 with a thickness of 200nm is deposited on the surface of a silicon substrate 200 by a magnetron sputtering method, and silicon oxide is deposited on the etching barrier layer 201 as a second layer 202 to be bonded by a Chemical Vapor Deposition (CVD) method, with a thickness of 0.1-5 μm.
(6) As shown in fig. 5, the first layer 104 to be bonded and the second layer 202 to be bonded are attached, and the two substrates are tightly connected together by an anodic bonding process at 400 ℃, so that the first layer 104 to be bonded and the second layer 202 to be bonded form a dense film layer 203. In order to enhance the bonding effect, CMP treatment is performed on the first layer 104 to be bonded and the second layer 202 to be bonded before bonding, the roughness after the treatment is less than 0.3nm, and dishing of the first layer 104 to be bonded needs to be reduced to within ±50 nm.
(7) As shown in fig. 6, the silicon carbide substrate is thinned by chemical mechanical thinning to 100 to 5 μm; and then removing the residual silicon carbide substrate by adopting a plasma etching mode, wherein the method for judging the etching end point is that the piezoelectric film on the surface of the device is pink, and in order to ensure the quality and the roughness of the piezoelectric layer, the plasma etching is finished, the CMP treatment is required, and the roughness after the treatment is less than 1nm.
(8) As shown in fig. 7, a metal molybdenum with a thickness of 200nm is deposited on the surface of the piezoelectric layer 101 by using a magnetron sputtering method, and patterned by using a plasma etching method, so as to form a second electrode 204 with a lateral width of 200 μm.
(9) As shown in fig. 8, an amorphous silicon film with a thickness of 1.5 μm is deposited on the surface of the piezoelectric layer 101 by a plasma chemical vapor deposition (PECVD) process on the surface of the second electrode 204, and in order to reduce the stress of the amorphous silicon, a silicon oxide film of about 100nm is deposited as a buffer layer (not shown) before the amorphous silicon film is deposited. Patterning the amorphous silicon film by adopting a plasma etching method after the amorphous silicon film deposition is completed to form a sacrificial layer 205; the lateral width is 160 μm.
(10) As shown in fig. 9, a 6 μm silicon oxide film is deposited as a third to-be-bonded layer 206 on the surface of the piezoelectric layer 101, the second electrode 204, and the sacrificial layer 205 by a plasma chemical vapor deposition (PECVD) process.
(11) As shown in fig. 10, the substrate 200 including the third layer to be bonded 206 and the substrate 300 including the fourth layer to be bonded are tightly connected together by an anodic bonding process at 400 degrees celsius to form the second bonding layer 206-1. In order to enhance the bonding effect, CMP treatment is performed on the third layer 206 to be bonded and the layer to be bonded on the substrate 300 before bonding, the roughness after the treatment is less than 0.5nm, and dishing of the third layer 206 to be bonded needs to be reduced to ±100 nm.
(12) As shown in fig. 11, the silicon substrate is thinned by chemical mechanical thinning 200 to 60 μm;
(13) As shown in fig. 12, a BOSCH process is first used to window the thinned substrate 200 to the surface of the etching barrier layer 201, and then a plasma etching or wet etching method is used to continue to open to the surface of the protective layer 103, so as to form a window 207 shown in fig. 12, where the lateral width of the window 207 is 400 μm.
(14) As shown in fig. 13, a window 208 is formed on the surface of the protective layer 103 by plasma etching or wet etching, and the lateral width of the window 208 is 100 μm.
(15) As shown in fig. 14, windows 209 and 209-1 are formed on the bonding layer 203 and the surface of the piezoelectric layer 101 by adopting a method of plasma etching or a combination of plasma etching and wet etching, and the bottom of the window 209 is connected with the surface of the second electrode 204 to fill holes for the metal PAD of the second electrode 204; the bottom of the window 209-1 is connected to the surface of the sacrificial layer 205, and the window 209 has a lateral width of 50-200 μm (preferably 100 μm) and the window 209-1 has a lateral width of 25 μm as a sacrificial layer release hole.
(16) As shown in fig. 15, aluminum with a thickness of 500nm is deposited on the surface of the piezoelectric layer 101 in the window 209 and in the window 208 by thermal evaporation or magnetron sputtering, and patterned by lift-off to form a metal Pad 210, and the metal Pad connected to the second electrode 204 through the 209-hole metal Pad 210 is not connected to the protective layer 103.
(13) As shown in fig. 16, the sacrificial layer 205 is removed by a wet etching process or a fumigation process using the window 209-1, and the cavity one 205-1 is reformed.
Example 2:
a preparation method of a film bulk acoustic resonator based on a multiple bonding process comprises the following specific steps:
(1) The device structure fabrication steps are the same as steps 1-12 in scheme one, but the silicon substrate 200 in step 12 is thinned to 10 μm.
(2) As shown in fig. 17, the silicon substrate 200 is entirely removed by a process of plasma etching or fumigation.
(3) As shown in fig. 18, the etch stop layer 201 and the first dense layer 203 are removed by a process of plasma etching or wet etching.
(4) As shown in fig. 19, a window 210 is formed on the surface of the protective layer 103 by plasma etching or wet etching, and the window 210 has a lateral width of 100 μm.
(5) As shown in fig. 20, windows 211 and 211-1 are formed on the surface of the piezoelectric layer 101 by adopting a method of plasma etching or a combination of plasma etching and wet etching, and the bottom of the window 211 is connected with the surface of the second electrode 204 to fill holes for the metal PAD of the second electrode 204; the bottom of the window 211-1 is connected to the surface of the sacrificial layer 205, and the window 211 has a lateral width of 50-200 μm (preferably 100 μm) and the window 211-1 has a lateral width of 25 μm as a sacrificial layer release hole.
(6) As shown in fig. 21, gold with a thickness of 500nm is deposited on the surface of the piezoelectric layer 101 in the window 210 and in the window 211 by thermal evaporation or magnetron sputtering, and patterned by lift-off to form a metal Pad 209, and the metal Pad connected to the second electrode 204 through the metal Pda 209 of the window 211 is not connected to the protective layer 103.
(7) As shown in fig. 22, the sacrificial layer 205 is removed by a wet etching process or a fumigation process using the window 211-1, and the cavity one 205-1 is reformed.
Performance test:
as shown in fig. 23, the piezoelectric thin film prepared in example 1 has a full width at half maximum (FWHM) of 0.0216 degrees by a high resolution XRD test method;
as shown in fig. 24, the piezoelectric thin film prepared in example 2 was measured to have a full width at half maximum (FWHM) of 0.079 degrees by a high resolution XRD test method.
Claims (10)
1. The preparation method of the film bulk acoustic resonator based on the multiple bonding process is characterized by comprising the following steps of:
(1) Preparing a first piezoelectric film structure by adopting a first wafer bonding method, wherein the first piezoelectric film structure comprises a second substrate layer, an etching barrier layer, a first uniform dense film layer, a protective layer, a first electrode layer, a piezoelectric film layer and a first substrate which are sequentially arranged from top to bottom;
(2) Taking the first piezoelectric film structure, removing the first substrate, depositing a second electrode on the surface of the piezoelectric film layer, and depositing a sacrificial layer on the surface of the second electrode to obtain a second piezoelectric film structure;
(3) A second wafer bonding method is adopted for the second piezoelectric film structure to obtain a third piezoelectric film structure, and the third piezoelectric film structure comprises a second substrate, an etching barrier layer, a first dense film layer, a protective layer, a first electrode layer, a piezoelectric film layer, a second electrode layer, a sacrificial layer, a second dense film layer and a third substrate which are sequentially arranged from top to bottom;
(4) Taking a third piezoelectric film structure, thinning a second substrate, windowing the thinned second substrate until reaching the surface of the protective layer to obtain a first window, windowing the bottom of the first window to obtain a second window, a third window and a fourth window, depositing a metal pad layer on a first electrode through the second window, depositing the metal pad layer on a second electrode through the third window, adding corrosive liquid into the fourth window to corrode the sacrificial layer to form a cavity, and obtaining the first film bulk acoustic resonator;
Or taking a third piezoelectric film structure, thinning the second substrate, etching the second substrate to the etching barrier layer on the whole surface, removing the etching barrier layer and the second compact layer, windowing the protective layer to obtain a fifth window, windowing the piezoelectric film layer to obtain a sixth window and a seventh window, depositing a metal pad layer on the first electrode through the fifth window, depositing the metal pad layer on the second electrode through the sixth window, adding corrosive liquid into the seventh window to corrode the sacrificial layer to form a cavity, and obtaining the second film bulk acoustic resonator.
2. The method of manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to claim 1, wherein in step (1), the first piezoelectric thin film structure is manufactured by using a first wafer bonding method, comprising:
Depositing a piezoelectric film layer on the surface of a first substrate, depositing a first electrode on the surface of the piezoelectric film layer, depositing a protective layer on the surface of the first electrode, and depositing a first layer to be bonded on the surface of the piezoelectric film layer and the surface of the protective layer;
Depositing an etching barrier layer on the surface of the second substrate, and depositing a second layer to be bonded on the surface of the etching barrier layer;
and bonding the first layer to be bonded and the second layer to be bonded through a first wafer bonding transfer method to obtain a first compact film layer so as to obtain a first piezoelectric film structure.
3. The method for manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to claim 2, wherein the piezoelectric thin film layer is fixed on the first substrate by magnetron sputtering or metal organic chemical vapor deposition or ion implantation delamination, the material of the piezoelectric thin film layer is single crystal aluminum nitride, polycrystalline aluminum nitride, doped aluminum nitride, liNbO 3 thin film, liTbO 3 thin film, quartz thin film, PZT thin film or zinc oxide, and the thickness of the piezoelectric thin film layer is 0.1 μm to 2 μm.
4. The method for manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to claim 2, wherein a protective layer is deposited on the first electrode layer by a chemical vapor deposition method or a plasma chemical vapor deposition method, a pattern is formed on the surface of the protective layer by plasma etching or wet etching, the protective layer is made of silicon oxide or aluminum nitride, the thickness of the protective layer is 10nm-1000nm, and the lateral width is 50 μm-300 μm.
5. The method for manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to claim 1, wherein in the step (2), a sacrificial layer is deposited by a chemical vapor deposition method or a plasma chemical vapor deposition method, and the material of the sacrificial layer is amorphous silicon, polysilicon or phosphoric acid glass.
6. The method for manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to claim 1, wherein in the step (3), a second wafer bonding transfer method is used for the second piezoelectric thin film structure to obtain a third piezoelectric thin film structure, which includes:
Depositing a third to-be-bonded layer on the surface of the sacrificial layer, the surface of the second electrode and the surface of the piezoelectric layer of the second piezoelectric film structure;
And depositing a fourth to-be-bonded layer on the surface of the third substrate, and bonding the fourth to-be-bonded layer and the third to-be-bonded layer by a second wafer bonding method to obtain a second compact film layer so as to obtain a third piezoelectric film structure.
7. The method for manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to claim 1, wherein in the step (4), a metal pad layer is deposited on the first electrode layer or the second electrode layer by thermal evaporation or magnetron sputtering, the metal pad layer is made of one or any combination of molybdenum, aluminum, gold, platinum, copper, silver, titanium, tungsten and nickel, and the thickness of the metal pad layer is 0.2-2 μm.
8. The method for manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to claim 1, wherein in the step (4), the cavity is formed by removing the sacrificial layer by fumigation and wet etching, the cross section of the cavity is one or any combination of a trapezoid, a triangle and a circular arc, the depth of the cavity is 0.5-2 μm, and the lateral width of the cavity is 50-300 μm.
9. The method for manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to claim 1, wherein the material of the first dense film layer or the second dense film layer is one or any combination of silicon, silicon oxide, silicon nitride, organic matter, phosphoric acid glass or doped silicon oxide.
10. A thin film bulk acoustic resonator manufactured by the method for manufacturing a thin film bulk acoustic resonator based on a multiple bonding process according to any one of claims 1 to 9.
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