CN114221631B - Resonator, preparation method thereof and filter - Google Patents
Resonator, preparation method thereof and filter Download PDFInfo
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- CN114221631B CN114221631B CN202111569313.5A CN202111569313A CN114221631B CN 114221631 B CN114221631 B CN 114221631B CN 202111569313 A CN202111569313 A CN 202111569313A CN 114221631 B CN114221631 B CN 114221631B
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- 238000002360 preparation method Methods 0.000 title abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000011049 filling Methods 0.000 claims abstract description 23
- 238000000059 patterning Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
A resonator, a preparation method thereof and a filter relate to the technical field of resonators. The preparation method comprises the following steps: sequentially forming a piezoelectric layer and a first electrode layer on a first substrate; forming a first bonding layer on the first electrode layer; patterning the first bonding layer to form a first groove exposing the piezoelectric layer; forming a sacrificial material filling the first groove to obtain a first device; forming a second bonding layer on a second substrate; patterning the second bonding layer to form a second groove exposing the second substrate; forming a sacrificial material filling the second groove to obtain a second device; bonding the first bonding layer of the first device and the second bonding layer of the second device, and removing the first substrate; forming a second electrode layer on one surface of the piezoelectric layer, which is far away from the first electrode layer, so as to obtain a third device; a release hole is formed in the third device through which the sacrificial material is released to form a cavity of the resonator. The piezoelectric layer of the resonator prepared by the preparation method is made of single crystal materials, and can meet the requirements of high-performance devices.
Description
Technical Field
The application relates to the technical field of resonators, in particular to a resonator, a preparation method thereof and a filter.
Background
The film bulk acoustic resonator is characterized in that an electric signal is applied between a top electrode and a bottom electrode, and an acoustic signal is generated by utilizing the piezoelectric effect of a piezoelectric film, so that the acoustic signal oscillates between the top electrode and the bottom electrode, the acoustic wave is divided into a vibration mode and a transverse vibration mode along the thickness direction, only the acoustic wave meeting the acoustic wave total reflection condition along the thickness direction is reserved, the acoustic wave in the transverse vibration mode is consumed, and the reserved acoustic signal is converted into an electric signal to be output, so that the frequency selection of the electric signal is realized.
The working area of the film bulk acoustic resonator comprises three layers of a bottom electrode, a piezoelectric layer and a top electrode. The common preparation method of the film bulk acoustic resonator is to sequentially prepare a bottom electrode, a piezoelectric layer and a top electrode, and realize the patterning requirement by combining a photoetching process. However, after the bottom electrode is prepared, the piezoelectric layer prepared on the bottom electrode by chemical vapor deposition or magnetron sputtering is often made of polycrystalline material, and the piezoelectric property of the polycrystalline material is inferior to that of the monocrystalline material, so that the requirement of a high-performance device is difficult to meet.
Disclosure of Invention
The application aims to provide a resonator and a preparation method thereof, and the piezoelectric layer of the resonator prepared by the preparation method of the resonator is made of single crystal materials, so that the requirements of high-performance devices can be met.
Embodiments of the present application are implemented as follows:
in one aspect of the present application, there is provided a method of manufacturing a resonator, the method comprising: sequentially forming a piezoelectric layer and a first electrode layer on a first substrate; forming a first bonding layer on the first electrode layer; patterning the first bonding layer to form a first groove exposing the piezoelectric layer; forming a sacrificial material filling the first recess to obtain a first device; forming a second bonding layer on a second substrate; patterning the second bonding layer to form a second groove exposing the second substrate; forming a sacrificial material filling the second recess to obtain a second device; bonding the first bonding layer of the first device and the second bonding layer of the second device together and removing the first substrate; forming a second electrode layer on one surface of the piezoelectric layer, which is far away from the first electrode layer, so as to obtain a third device; a release hole is formed in the third device and the sacrificial material is released through the release hole to form a cavity of the resonator. The piezoelectric layer of the resonator prepared by the preparation method of the resonator is made of single crystal materials, and can meet the requirements of high-performance devices.
Optionally, forming a sacrificial material filling the first recess to obtain a first device, comprising: forming a sacrificial material on the first bonding layer, wherein the sacrificial material fills the first groove; and removing the sacrificial material on the surface of the first bonding layer, which is away from the first substrate, and retaining the sacrificial material in the first groove to obtain the first device.
Optionally, removing the sacrificial material of the side of the first bonding layer facing away from the first substrate includes: and removing the sacrificial material on the side of the first bonding layer, which is away from the first substrate, in a mechanical grinding mode.
Optionally, forming a sacrificial material filling the second recess to obtain a second device, comprising: forming a sacrificial material on the second bonding layer, wherein the sacrificial material fills the second groove; and removing the sacrificial material on the side of the second bonding layer away from the second substrate, and retaining the sacrificial material in the second groove to obtain the second device.
Optionally, removing the sacrificial material from a side of the second bonding layer facing away from the second substrate includes: and removing the sacrificial material on the side of the second bonding layer away from the second substrate in a mechanical grinding mode.
Optionally, forming the piezoelectric layer and the first electrode layer sequentially on the first substrate includes: forming a support layer on a first substrate; a piezoelectric layer and a first electrode layer are sequentially formed on the support layer.
Optionally, forming a second electrode layer on a side of the piezoelectric layer away from the first electrode layer, including: etching the support layer and the piezoelectric layer to form a first through hole exposing the first electrode layer; etching the support layer to form a second through hole exposing the piezoelectric layer to obtain a third device, wherein orthographic projections of the first through hole and the second through hole on the piezoelectric layer are not overlapped; and depositing a metal material on one surface of the support layer of the third device, which is away from the piezoelectric layer, and etching the metal material to form a second electrode layer and an extraction electrode at intervals, wherein the second electrode layer passes through the second through hole to be in contact connection with the piezoelectric layer, and the extraction electrode passes through the first through hole to be in contact connection with the first electrode layer.
Optionally, forming a release hole on the third device and releasing the sacrificial material through the release hole to form a cavity of the resonator, comprising: forming a release hole on one surface of the third device close to the second electrode layer, wherein the release hole extends from the second electrode layer towards the direction close to the sacrificial material so as to expose the sacrificial material; the sacrificial material is released through the release hole to form a cavity of the resonator.
In another aspect of the present application, a resonator is provided, which is prepared by the method for preparing the resonator.
In yet another aspect of the application, a filter is provided that includes the resonator described above.
The beneficial effects of the application include:
the preparation method of the resonator provided by the application comprises the following steps: sequentially forming a piezoelectric layer and a first electrode layer on a first substrate; forming a first bonding layer on the first electrode layer; patterning the first bonding layer to form a first groove exposing the piezoelectric layer; forming a sacrificial material filling the first recess to obtain a first device; forming a second bonding layer on a second substrate; patterning the second bonding layer to form a second groove exposing the second substrate; forming a sacrificial material filling the second recess to obtain a second device; bonding the first bonding layer of the first device and the second bonding layer of the second device together and removing the first substrate; forming a second electrode layer on one surface of the piezoelectric layer, which is far away from the first electrode layer, so as to obtain a third device; a release hole is formed in the third device and the sacrificial material is released through the release hole to form a cavity of the resonator. When the resonator is prepared, the piezoelectric layer and the first electrode layer are firstly formed on the first substrate, the second bonding layer is formed on the second substrate, then the piezoelectric layer and the first electrode layer are bonded together, and the second electrode layer is formed after bonding is finished, so that the piezoelectric layer is formed on the first substrate and is directly prepared on the bottom electrode in a mode of chemical vapor deposition or magnetron sputtering and the like, and therefore, the single-crystal piezoelectric layer can be obtained, and the requirements of high-performance devices can be met; in addition, the sacrificial layers are filled in the first bonding layer and the second bonding layer in the preparation process of the resonator, so that the mechanical stability of the device can be enhanced in the bonding process and the subsequent preparation process, the structural stability of the resonator prepared by the preparation method of the resonator provided by the application is better, and the requirement of a high-performance device can be met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a resonator according to some embodiments of the present application;
FIG. 2 is a second flow chart of a method for manufacturing a resonator according to some embodiments of the present application;
FIG. 3 is a third flow chart of a method for manufacturing a resonator according to some embodiments of the present application;
FIG. 4 is a flow chart illustrating a method of manufacturing a resonator according to some embodiments of the present application;
FIG. 5 is a flow chart of a method for manufacturing a resonator according to some embodiments of the present application;
FIG. 6 is a flowchart illustrating a method of manufacturing a resonator according to some embodiments of the present application;
FIG. 7 is a schematic diagram of a process for manufacturing a resonator according to some embodiments of the present application;
FIG. 8 is a second schematic diagram of a process for manufacturing a resonator according to some embodiments of the present application;
FIG. 9 is a third schematic diagram illustrating a manufacturing process of a resonator according to some embodiments of the present application;
FIG. 10 is a schematic diagram of a process for manufacturing a resonator according to some embodiments of the present application;
FIG. 11 is a fifth schematic diagram of a process for manufacturing a resonator according to some embodiments of the present application;
FIG. 12 is a schematic diagram of a process for manufacturing a resonator according to some embodiments of the present application;
FIG. 13 is a schematic diagram of a resonator according to some embodiments of the present application;
FIG. 14 is a schematic illustration of a resonator according to some embodiments of the present application;
FIG. 15 is a diagram illustrating a process for fabricating a resonator according to some embodiments of the present application;
fig. 16 is a schematic view of a manufacturing process of a resonator according to some embodiments of the present application.
Icon: 10-a first substrate; 11-cavity; 20-a piezoelectric layer; 30-a first electrode layer; 40-total bond layer; 41-a first bonding layer; 411-first groove; 42-a second bonding layer; 421-second groove; 50-sacrificial material; 100-a first device; 60-a second substrate; 200-a second device; 70-a second electrode layer; 300-a third device; 310-release holes; 80-a support layer; 81-a first through hole; 82-a second through hole; 90-extraction electrode.
Detailed Description
The embodiments set forth below represent the information necessary to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the application and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the application and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or extending "onto" another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly extending onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or extending "over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Related terms such as "below" or "above" … "or" upper "or" lower "or" horizontal "or" vertical "may be used herein to describe one element, layer or region's relationship to another element, layer or region as illustrated in the figures. It should be understood that these terms, and those terms discussed above, are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Referring to fig. 1, the present embodiment provides a method for manufacturing a resonator, which includes:
s100, a piezoelectric layer 20 and a first electrode layer 30 are sequentially formed on a first substrate 10, see fig. 7.
The material of the first substrate 10, the material of the piezoelectric layer 20, and the material of the first electrode layer 30 are not limited in the present application, and a person skilled in the art may select a suitable material according to the need.
Referring to fig. 4, optionally, the step S100 of forming the piezoelectric layer 20 and the first electrode layer 30 on the first substrate 10 sequentially may specifically include the following steps:
s110, a support layer 80 is formed on the first substrate 10.
S120, the piezoelectric layer 20 and the first electrode layer 30 are sequentially formed on the support layer 80.
That is, the support layer 80 is formed on the first substrate 10, and then the piezoelectric layer 20 and the first electrode layer 30 are sequentially formed on the support layer 80.
S200, a first bonding layer 41 is formed on the first electrode layer 30, please refer to fig. 7.
Wherein the first bonding layer 41 is used for bonding with a subsequently formed second device 200. The material of the first bonding layer 41 can be selected by one skilled in the art.
S300, the first bonding layer 41 is patterned to form a first recess 411 exposing the piezoelectric layer 20, refer to fig. 7.
In this embodiment, the patterning of the first bonding layer 41 may be achieved by a photolithography process. The first recess 411 is located at an intermediate position of the first bonding layer 41, and an orthographic projection of the first recess 411 on the piezoelectric layer 20 is located within the piezoelectric layer 20.
It should be noted that the size of the first recess 411 may be set by a person skilled in the art according to the size of the cavity 11 of the resonator to be obtained, and in particular, the present application is not limited.
S400, a sacrificial material 50 filling the first recess 411 is formed to obtain the first device 100, please refer to fig. 9.
The present application fills the sacrificial material 50 in the first recess 411 such that, when the first device 100 and the second device 200 are subsequently bonded together, mechanical stability of the device during fabrication can be improved since the sacrificial material 50 is disposed in both the bonding layer of the first device 100 (i.e., the first bonding layer 41) and the bonding layer of the second device 200 (i.e., the second bonding layer 42, which will be described later).
Referring to fig. 2, in the present embodiment, step S400, forming the sacrificial material 50 filling the first recess 411 to obtain the first device 100, specifically includes the following steps:
s410, a sacrificial material 50 is formed on the first bonding layer 41, and the sacrificial material 50 fills the first recess 411, as shown in fig. 8.
S420, the sacrificial material 50 on the side of the first bonding layer 41 facing away from the first substrate 10 is removed, and the sacrificial material 50 in the first recess 411 is remained, so as to obtain the first device 100, as shown in fig. 9.
That is, when forming the sacrificial material 50 filling the first recess 411, specifically, the sacrificial material 50 may be formed (may be formed by deposition) on the side of the first bonding layer 41 away from the first substrate 10, and the sacrificial material 50 is made to fill the first recess 411; then, the sacrificial material 50 of the side of the first bonding layer 41 facing away from the first substrate 10 is removed, and the sacrificial material 50 located in the first recess 411 remains. Thus, the structure shown in fig. 9 can be obtained.
Optionally, the removing the sacrificial material 50 on the side of the first bonding layer 41 facing away from the first substrate 10 in the step S420 may be achieved by:
the sacrificial material 50 on the side of the first bonding layer 41 facing away from the first substrate 10 is removed by mechanical grinding.
S500, forming a second bonding layer 42 on the second substrate 60.
S600, patterning the second bonding layer 42 to form a second groove 421 exposing the second substrate 60, refer to fig. 10.
Wherein the second groove 421 is located at a middle position of the second bonding layer 42. In the present embodiment, the dimensions of the second recess 421 and the dimensions and shape of the first recess 411 are the same, so that after subsequent bonding, and after release of the sacrificial material 50 within the first recess 411 and the second recess 421, a cavity 11 of the resonator can be obtained.
S700, a sacrificial material 50 filling the second recess 421 is formed to obtain the second device 200, as shown in fig. 12.
For example, referring to fig. 3, the step S700 of forming the sacrificial material 50 filling the second groove 421 to obtain the second device 200 may specifically include the following steps:
s710, a sacrificial material 50 is formed on the second bonding layer 42, and the sacrificial material 50 fills the second groove 421, please refer to fig. 11.
At S720, the sacrificial material 50 on the side of the second bonding layer 42 facing away from the second substrate 60 is removed, and the sacrificial material 50 in the second recess 421 is remained, so as to obtain the second device 200, please refer to fig. 12.
In this embodiment, the specific steps of forming the sacrificial material 50 filling the second recess 421 and forming the sacrificial material 50 filling the first recess 411 are the same as those described above, and are achieved by forming the sacrificial material 50 entirely and then removing the sacrificial material 50 on the side facing away from the substrate, so that only the sacrificial material 50 located in the recess remains.
Optionally, in the step S720, the sacrificial material 50 on the side of the second bonding layer 42 facing away from the second substrate 60 is removed, which may be specifically implemented by the following manner:
the sacrificial material 50 is removed by mechanical grinding from the side of the second bonding layer 42 facing away from the second substrate 60.
Since the mechanical polishing method is well known to those skilled in the art, the present application will not be described in detail.
S800, bonding the first bonding layer 41 of the first device 100 and the second bonding layer 42 of the second device 200 together, and removing the first substrate 10, as shown in fig. 13.
It should be noted that, after bonding the first device 100 and the second device 200 together, the first bonding layer 41 of the first device 100 and the second bonding layer 42 of the second device 200 will be combined to form the total bonding layer 40. Also, the sacrificial material 50 of the first device 100 located in the first recess 411 and the sacrificial material 50 of the second device 200 located in the second recess 421 will also merge.
S900, a second electrode layer 70 is formed on a surface of the piezoelectric layer 20 away from the first electrode layer 30 to obtain a third device 300, please refer to fig. 15.
Wherein the first electrode layer 30 and the second electrode layer 70 are respectively located at two opposite sides of the piezoelectric layer 20, when an electrical signal is applied between the first electrode layer 30 and the second electrode layer 70, an acoustic signal is generated due to the piezoelectric effect of the piezoelectric layer 20, and the acoustic signal oscillates between the first electrode layer 30 and the second electrode layer 70 and is converted into an electrical signal for output, so that the frequency selection of the electrical signal of the resonator can be realized.
Referring to fig. 5, in the step S900, the second electrode layer 70 is formed on the surface of the piezoelectric layer 20 away from the first electrode layer 30, and the method may specifically include the following steps:
s901, etching the support layer 80 and the piezoelectric layer 20 to form a first via 81 exposing the first electrode layer 30, as shown in fig. 14.
S902, etching the support layer 80 to form a second through hole 82 exposing the piezoelectric layer 20, so as to obtain a third device 300, where orthographic projections of the first through hole 81 and the second through hole 82 on the piezoelectric layer 20 do not overlap, as shown in fig. 14.
The first through-hole 81 is provided for the subsequent extraction of the first electrode layer 30, and the second through-hole 82 is provided for the contact connection of the second electrode layer 70 and the piezoelectric layer 20. The sizes of the first and second through holes 81 and 82 may be determined by one skilled in the art, and the present application is not limited thereto.
S903, depositing a metal material on a surface of the support layer 80 of the third device 300 facing away from the piezoelectric layer 20, and etching the metal material to form a second electrode layer 70 and an extraction electrode 90, where the second electrode layer 70 is connected to the piezoelectric layer 20 in contact through the second through hole 82, and the extraction electrode 90 is connected to the first electrode layer 30 in contact through the first through hole 81, as shown in fig. 15.
By drawing the first electrode layer 30 to one side of the second electrode layer 70, subsequent application of an electrical signal to the first electrode layer 30 and the second electrode layer 70 can be facilitated.
S910, a release hole 310 is formed in the third device 300, and the sacrificial material 50 is released through the release hole 310 to form the cavity 11 of the resonator, please refer to fig. 16.
Referring to fig. 6, in the embodiment, the step S910 of forming the release hole 310 on the third device 300 and releasing the sacrificial material 50 through the release hole 310 to form the cavity 11 of the resonator may specifically include the following steps:
at S911, a release hole 310 is formed in a surface of the third device 300 adjacent to the second electrode layer 70, and the release hole 310 extends from the second electrode layer 70 toward a direction adjacent to the sacrificial material 50 to expose the sacrificial material 50.
S912, the sacrificial material 50 is released through the release hole 310 to form the cavity 11 of the resonator.
In summary, the preparation method of the resonator provided by the application comprises the following steps: forming a piezoelectric layer 20 and a first electrode layer 30 in this order on a first substrate 10; forming a first bonding layer 41 on the first electrode layer 30; patterning the first bonding layer 41 to form a first recess 411 exposing the piezoelectric layer 20; forming a sacrificial material 50 filling the first recess 411 to obtain a first device 100; forming a second bonding layer 42 on the second substrate 60; patterning the second bonding layer 42 to form a second groove 421 exposing the second substrate 60; forming a sacrificial material 50 filling the second recess 421 to obtain a second device 200; bonding the first bonding layer 41 of the first device 100 and the second bonding layer 42 of the second device 200 together and removing the first substrate 10; forming a second electrode layer 70 on a side of the piezoelectric layer 20 remote from the first electrode layer 30 to obtain a third device 300; a release hole 310 is formed on the third device 300 and the sacrificial material 50 is released through the release hole 310 to form the cavity 11 of the resonator. In the preparation of the resonator, the piezoelectric layer 20 and the first electrode layer 30 are firstly formed on the first substrate 10, the second bonding layer 42 is formed on the second substrate 60 at the same time, then the piezoelectric layer 20 is formed on the first substrate 10 instead of being directly prepared on the bottom electrode by chemical vapor deposition, magnetron sputtering or the like, and the single crystal piezoelectric layer 20 can be obtained, so that the requirements of high-performance devices can be met; in addition, the first bonding layer 41 and the second bonding layer 42 are filled with the sacrificial layers in the preparation process of the resonator, so that the mechanical stability of the device can be enhanced in the bonding process and the subsequent preparation process, the structural stability of the resonator prepared by the preparation method of the resonator provided by the application is better, and the requirement of a high-performance device can be met.
In another aspect of the present application, a resonator is provided, which is prepared by the method for preparing the resonator. Since the specific steps and the beneficial effects of the preparation method of the resonator are described in detail in the foregoing, the description of the present application is not repeated here.
In yet another aspect of the application, a filter is provided that includes the resonator described above. Since the specific structure and the beneficial effects of the resonator have been described in detail in the foregoing, the description of the present application is not repeated here. The filter can be built by a plurality of resonators, the building mode of the resonators is not particularly limited, and the filter can be selected by a person skilled in the art according to requirements.
The above description is only of alternative embodiments of the present application and is not intended to limit the present application, and various modifications and variations will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
In addition, the specific features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various possible combinations are not described further.
Claims (9)
1. A method of manufacturing a resonator, comprising:
sequentially forming a piezoelectric layer and a first electrode layer on a first substrate;
forming a first bonding layer on the first electrode layer;
patterning the first bonding layer to form a first groove exposing the first electrode layer;
forming a sacrificial material filling the first groove to obtain a first device;
forming a second bonding layer on a second substrate;
patterning the second bonding layer to form a second groove exposing the second substrate;
forming a sacrificial material filling the second groove to obtain a second device;
correspondingly arranging a sacrificial material of the first device and a sacrificial material of the second device, bonding a first bonding layer of the first device and a second bonding layer of the second device together, and removing the first substrate;
forming a second electrode layer on one surface of the piezoelectric layer, which is far away from the first electrode layer, so as to obtain a third device;
forming a release hole on the third device and releasing the sacrificial material through the release hole to form a cavity of the resonator;
the forming of the sacrificial material filling the first recess to obtain a first device comprises:
forming a sacrificial material on the first bonding layer, and filling the first groove with the sacrificial material;
and removing the sacrificial material on the side, facing away from the first substrate, of the first bonding layer, and retaining the sacrificial material in the first groove to obtain the first device.
2. The method of manufacturing a resonator according to claim 1, wherein said removing the sacrificial material on a side of the first bonding layer facing away from the first substrate comprises:
and removing the sacrificial material on the side of the first bonding layer, which is away from the first substrate, in a mechanical grinding mode.
3. The method of manufacturing a resonator according to claim 1, wherein forming a sacrificial material filling the second recess to obtain a second device comprises:
forming a sacrificial material on the second bonding layer, and filling the second groove with the sacrificial material;
and removing the sacrificial material on the side, facing away from the second substrate, of the second bonding layer, and retaining the sacrificial material in the second groove to obtain the second device.
4. A method of manufacturing a resonator according to claim 3, wherein said removing the sacrificial material on a side of the second bonding layer facing away from the second substrate comprises:
and removing the sacrificial material on the side of the second bonding layer, which is away from the second substrate, in a mechanical grinding mode.
5. The method of manufacturing a resonator according to claim 1, wherein the sequentially forming the piezoelectric layer and the first electrode layer on the first substrate comprises:
forming a support layer on a first substrate;
and forming a piezoelectric layer and a first electrode layer on the supporting layer in sequence.
6. The method of manufacturing a resonator according to claim 5, wherein forming a second electrode layer on a side of the piezoelectric layer away from the first electrode layer comprises:
etching the support layer and the piezoelectric layer to form a first through hole exposing the first electrode layer;
etching the support layer to form a second through hole exposing the piezoelectric layer to obtain a third device, wherein orthographic projections of the first through hole and the second through hole on the piezoelectric layer are not overlapped;
and depositing a metal material on one surface of the support layer of the third device, which is away from the piezoelectric layer, and etching the metal material to form a second electrode layer and an extraction electrode at intervals, wherein the second electrode layer passes through the second through hole to be in contact connection with the piezoelectric layer, and the extraction electrode passes through the first through hole to be in contact connection with the first electrode layer.
7. The method of manufacturing a resonator according to claim 6, wherein the forming a release hole in the third device and releasing the sacrificial material through the release hole to form a cavity of the resonator comprises:
forming a release hole on one surface of the third device, which is close to the second electrode layer, wherein the release hole extends from the second electrode layer towards the direction close to the sacrificial material so as to expose the sacrificial material;
releasing the sacrificial material through the release hole to form a cavity of the resonator.
8. A resonator produced by the method of producing a resonator according to any one of claims 1 to 7.
9. A filter comprising the resonator of claim 8.
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| CN111147040A (en) * | 2019-12-23 | 2020-05-12 | 河源市众拓光电科技有限公司 | Air gap type film bulk acoustic resonator and preparation method thereof |
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| US20200313648A1 (en) * | 2019-03-28 | 2020-10-01 | Global Communication Semiconductors, Llc | Single-Crystal Bulk Acoustic Wave Resonator and Method of Making Thereof |
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