CN109546985A - Bulk acoustic wave resonator and its manufacturing method - Google Patents
Bulk acoustic wave resonator and its manufacturing method Download PDFInfo
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- CN109546985A CN109546985A CN201811301901.9A CN201811301901A CN109546985A CN 109546985 A CN109546985 A CN 109546985A CN 201811301901 A CN201811301901 A CN 201811301901A CN 109546985 A CN109546985 A CN 109546985A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 54
- 238000000151 deposition Methods 0.000 claims description 4
- 230000000644 propagated effect Effects 0.000 abstract description 20
- 238000010586 diagram Methods 0.000 description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000004891 communication Methods 0.000 description 8
- 229910017083 AlN Inorganic materials 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
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- 229910003978 SiClx Inorganic materials 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
Abstract
The present invention provides a kind of bulk acoustic wave resonator and its manufacturing method.Wherein the bulk acoustic wave resonator includes the silicon substrate being sequentially arranged from bottom to top, hearth electrode, piezoelectric layer, top electrode, and the air chamber in silicon substrate, it is characterized in that, bulk acoustic wave resonator further includes lateral acoustic impedance structure, and the inward flange of lateral acoustic impedance structure is located at except the resonance effective coverage of bulk acoustic wave resonator.Bulk acoustic wave resonator and its manufacturing method of the invention can limit the acoustic wave mode laterally propagated due to being provided with lateral acoustic impedance structure, to improve the performance of resonator, also have the advantages that structure is simple, technique is easy.
Description
Technical field
The present invention relates to field of micro electromechanical technology, particularly a kind of bulk acoustic wave resonator and its manufacturing method.
Background technique
With the fast development of wireless telecommunication system, communications protocol has been carried out large-scale commercial applications deployment, mesh from 3G to 4G
The preceding forward direction 5G epoch stride forward.The continuous evolution of communications protocol, for the realization of communication apparatus, more stringent requirements are proposed, opposite 3G
High frequency and densification trend is presented in agreement, the bandwidth in 4G and 5G agreement: the frequency of communication is continuously improved, and bandwidth is continuous
Increase, the division of bandwidth more crypto set.Therefore, the effect of filter is increasingly prominent in communication system radio-frequency front-end.How
It can be realized low-loss, high-frequency, the filter that height roll-offs becomes the research emphasis of RF Components manufacturer.
One is the height for constituting the quality factor of resonator of filter an important factor for influencing performance of filter.Quality
Factor can measure loss situation of the resonator in resonance.Quality factor are high, show that the loss of resonator is smaller, final to form
Filter have more excellent insertion loss and passband roll-off.Traditional filter is built by the capacitor and inductor device of separate type
It forms, however, this filter is limited to manufacture craft, quality factor are lower, usually tens, it is more difficult to be formed simultaneously outstanding
Pass band insertion loss and stopband inhibit.Another common filter is made of electromagnetic resonant cavity.Although electromagnetic resonant cavity energy
Enough guarantee high quality factor, preferable performance of filter is realized, still, since electromagnetic resonant cavity uses electromagnetic wave as resonance energy
Loading gage body, under certain frequency, resonant cavity size L=c/2f.Wherein, c is the light velocity, and f is resonance frequency.Since c is far longer than
F causes the size of resonant cavity very big, it is more difficult to meet the needs of communication system miniaturization.
In recent years, with the development of MEMS, there is the filter based on film bulk acoustic-wave resonator.Fig. 1
It is according to a kind of schematic diagram of the structure of film bulk acoustic-wave resonator in the prior art.As shown in Figure 1, resonator is produced on silicon lining
On bottom 104,102 and 101 be metal electrode, and thickness is usually several hundred nanometers.103 be piezoelectric material film, usually using oxygen
Change zinc or aluminium nitride material, with a thickness of several hundred nanometers to several microns.In order to enable can be realized resonance in the sound wave wherein generated,
It is required that sound wave generates reflection on top hearth electrode surface.It is the sky for being capable of forming sound wave reflection on top electrode 101 in Fig. 1
Gas, in order to enable sound wave also generates reflection in hearth electrode lower surface, production has air chamber 100 under hearth electrode 102.When alternation electricity
When pressure is applied on top electrode 101 and hearth electrode 102, excitation piezoelectric material film 103 generates piezoelectric effect and generates mechanical sound wave.
Sound wave is propagated and is reflected between the hearth electrode of top, forms standing wave resonance, and then resonance is formed in electrical response.Due to using sky
Chamber forms reflection, and this resonator is referred to as cavity-backed radiator bulk acoustic wave resonator.
Fig. 2 is the schematic diagram according to the structure of another bulk acoustic wave resonator in the prior art.As shown in Figure 2.With sky
Cavate bulk acoustic wave resonator is different, and the resonator is using the alternate material of acoustic impedance height deposited on a silicon substrate as reflection
Layer.Fig. 2 shows the stackings of two groups of acoustic impedance height transformation, and 206 be low acoustic impedance material, and 205 be high acoustic impedance materials.Work as sound
When wave direction substrate 204 is propagated, discontinuous due to acoustic impedance, acoustic wave energy is constantly reflected and is transmitted.The sound wave of transmissive
It is reflected again at next place's impedance discontinuity interface.Finally, most of energy reflection concentrates in piezoelectric membrane, forms resonance.
This structure is referred to as solid stack bulk acoustic wave resonator.
Currently, two kinds of structures are all widely used in wireless telecommunications filtering field.Fig. 3 is according to one in the prior art
The schematic diagram of typical cavity type resonator response.As shown in figure 3, abscissa indicates frequency, ordinate indicates impedance.Resonator
There are two resonance frequency, series resonance frequency Fs and parallel resonance frequency Fp for tool.When use bulk acoustic wave resonator forms filter
When, the quality factor of filter, which have performance of filter, to be directly affected, as shown in figure 4, Fig. 4 is according to filter in the prior art
The schematic diagram of influence of the quality factor of wave device to performance of filter.Wherein, abscissa indicates frequency, and ordinate indicates loss,
Solid line is the performance curve of high quality factor resonator, and dotted line is the performance curve of low-quality factor resonator.It can from Fig. 4
Out, the high resonator of quality factor is capable of providing lower insertion loss and more precipitous roll-off characteristic.
The technological means that can be promoted at present to the quality factor of resonator is mainly to pass through the growth for promoting piezoelectric membrane
Quality is realized, such as improves hearth electrode roughness, improves the board performance etc. of film growth, this usually will increase the realization of technique
Difficulty.
Therefore, how on existing Process ba- sis, by changing filter construction, improve the quality factor of resonator at
For a major issue of filter field.
Summary of the invention
In view of this, the present invention provides a kind of bulk acoustic wave resonator and its manufacturing method, to solve skill in the prior art
Art problem.
The bulk acoustic wave resonator of the embodiment of the present invention, including the silicon substrate, hearth electrode, piezoelectricity being sequentially arranged from bottom to top
Air chamber in layer, top electrode and the silicon substrate, which is characterized in that the bulk acoustic wave resonator further includes lateral acoustic resistance
The inward flange of resistive connection structure, the transverse direction acoustic impedance structure is located at except the resonance effective coverage of the bulk acoustic wave resonator.
Optionally, the lateral acoustic impedance structure includes the acoustic impedance structure being laterally alternately arranged and low acoustic impedance knot
Structure.
Optionally, the material of the lateral acoustic impedance structure is single high acoustic impedance materials or single low acoustic impedance material
Material.
Optionally, the material of the lateral acoustic impedance structure is identical as the material of hearth electrode or top electrode.
Optionally, the thickness of the lateral acoustic impedance structure is less than or equal to the piezoelectric layer thickness.
Optionally, the width of the lateral acoustic impedance structure is the odd-multiple of 1/4 lateral conduct acoustic waves wavelength.
The present invention also proposes a kind of method for manufacturing bulk acoustic wave resonator, comprising: makes groove on a silicon substrate；Described
Expendable material is filled in groove；Hearth electrode is made on the silicon substrate；Lateral acoustic impedance structure is made on the hearth electrode；
Make the piezoelectric layer of the bulk acoustic wave resonator；Top electrode is made in the piezoelectric layer surface；The expendable material is removed,
In, the inward flange of the transverse direction acoustic impedance structure is located at except the resonance effective coverage of the bulk acoustic wave resonator.
Optionally, which is characterized in that the transverse direction acoustic impedance structure include the acoustic impedance structure that is laterally alternately arranged and
Low acoustic impedance structure；Alternatively, the material of the transverse direction acoustic impedance structure is single high acoustic impedance materials or single resistance in a low voice
Anti- material.
Optionally, the step of making the piezoelectric layer of the bulk acoustic wave resonator includes: on the silicon substrate and hearth electrode
Depositing piezoelectric layer material；The piezoelectricity layer material is polished to obtain the piezoelectric layer of surfacing.
Optionally, the thickness of the lateral acoustic impedance structure is less than or equal to the piezoelectric layer thickness.
From the foregoing, it will be observed that bulk acoustic wave resonator and its manufacturing method of the invention can due to being provided with lateral acoustic impedance structure
The acoustic wave mode laterally propagated is limited with converting, to improve device performance, and with easy excellent of simple process
Point.
Detailed description of the invention
Attached drawing for a better understanding of the present invention, does not constitute an undue limitation on the present invention.Wherein:
Fig. 1 is traditional air reflection formula bulk acoustic wave resonator schematic diagram；
Fig. 2 is traditional solid stack bulk acoustic resonator structure schematic diagram；
Fig. 3 is the impedance-frequency electrical response curve of traditional resonator；
Fig. 4 is the schematic diagram that the quality factor of resonator influence performance of filter；
Fig. 5 is the dispersion curve figure for the acoustic wave mode laterally propagated present in resonator；
Fig. 6 is the structural schematic diagram of bulk acoustic wave resonator according to a first embodiment of the present invention；
Fig. 7 is the performance Smith chart of the bulk acoustic wave resonator of first embodiment of the invention；
Fig. 8 (a) and Fig. 8 (b) is the electrical impedance of resonator of the embodiment of the present invention Yu conventional air cavity reflection formula resonator
Comparison diagram；
Fig. 9 is the structural schematic diagram of bulk acoustic wave resonator according to a second embodiment of the present invention；
Figure 10 is the structural schematic diagram of bulk acoustic wave resonator according to a third embodiment of the present invention；
Figure 11 is the structural schematic diagram of bulk acoustic wave resonator according to a fourth embodiment of the present invention；
Figure 12 is the structural schematic diagram of bulk acoustic wave resonator according to a fifth embodiment of the present invention；
Figure 13 (a) to Figure 13 (i) is the schematic diagram of the production method of bulk acoustic wave resonator according to an embodiment of the present invention.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be machine
Tool connection, is also possible to be electrically connected；It can be directly connected, two members can also be can be indirectly connected through an intermediary
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include that fisrt feature is directly below and diagonally below the second feature, or is merely representative of
First feature horizontal height is less than second feature.
Inventor in the implementation of the present invention, analyzes sound wave acoustic wave mode present in bulk acoustic wave resonator
Dispersion curve.Fig. 5 be according to it is in the prior art using matrix method calculate sound wave in bulk acoustic wave resonator present in sound wave
The schematic diagram of the dispersion curve of mode.As shown in figure 5, the longitudinal axis indicates the resonance frequency of resonator, horizontal axis is indicated along resonator cross
The sound wave space wave number propagated to direction.Minimum four mode of Lamb wave sound wave is shown in Fig. 5, is TE1, A1 respectively,
S0, A0.Show the sound wave propagated outward in Fp frequency there are four kinds there are intersection point with four curves at resonance frequency Fp,
These sound waves carry energy, eventually by boundary dissipation into silicon substrate.Inventor has found due to lateral communication mode and consumption
The presence for dissipating energy reduces the acoustic-electric transfer efficiency of device, therefore weakens the quality factor of device.
In this regard, proposing to increase lateral acoustic impedance structure in bulk acoustic wave resonator in embodiment of the present invention, thus to cross
It is limited to the acoustic wave mode of propagation.It is described further below in conjunction with several embodiments.
Fig. 6 is the schematic diagram of bulk acoustic wave resonator according to a first embodiment of the present invention.As shown in fig. 6, in silicon substrate 604
Production above has hearth electrode 602, and hearth electrode material is acoustic impedance metal material, can be the metals such as molybdenum, aluminium, gold.In bottom electricity
Production has a piezoelectric layer 603 on pole 602, and 603 material of piezoelectric layer is received with a thickness of several hundred for piezo-electric crystals such as zinc oxide or aluminium nitride
Rice is to several microns.Production has top electrode 601 above piezoelectric layer 603.Production has air chamber 600 below hearth electrode.Air chamber
Surface on a silicon substrate on lateral dimension be defined as air chamber width L2.602 width of hearth electrode is greater than air chamber width, from
And guarantee the support strength of superstructure.601 width of top electrode is less than air chamber width.Top electrode, hearth electrode and air chamber weight
The common region of conjunction is effective resonance range of resonator.Although the top electrode width smaller than air chamber can guarantee in top bottom electricity
The sound wave main energetic propagated between pole is limited in effective district, but still remains the energy laterally revealed.Hearth electrode 602 it
On, production has acoustic impedance structure 606 and low acoustic impedance structure 605.Acoustic impedance structure 606 and low acoustic impedance structure 605 are total
With the lateral acoustic impedance structure of composition.Wherein, the inner boundary of acoustic impedance structure 606 and the outer boundary of top electrode are defined as
L1.The value of L1 is the numerical value more than or equal to 0.I.e. the interior location of acoustic impedance structure will not be located at top electrode 601, piezoelectric layer
603 and the resonance effective district that collectively forms of hearth electrode 602 in.The value of L1 ensure that the sound wave of vertically propagating not will receive
The influence of transverse impedance mapped structure.On the other hand, the width of acoustic impedance structure is defined as W1, the width of low acoustic impedance structure
It is defined as W2.In order to reach the limitation preferably to the acoustic wave mode laterally propagated, the width of W1 and W2 can choose 1/4 laterally
The odd-multiple (it should be noted that the width of W1 and W2 will not be too wide, to save material cost) of conduct acoustic waves wavelength in this way,
The acoustic wave mode laterally propagated from resonator central to edge when propagating, reflection by acoustic impedance structure 606 and in a low voice
The reflection of impedance structure 605, most of energy are constrained in effective coverage, are improved electromechanical conversion efficiency, are reduced energy
Loss, realizes the raising to quality factor.
Fig. 7 is the performance Smith chart of the resonator of first embodiment of the invention.In the Smith chart, curve closer to
Circular edge illustrates to be lost smaller.As shown in Figure 7, traditional cavity-backed radiator bulk acoustic wave resonator is compared, with laterally resistance
The resonator of anti-mapped structure is especially near parallel resonance frequency Fp more than series resonance frequency Fs, and curve location is more leaned on
Subcircular edge.Illustrate that transverse impedance mapped structure can effectively lower since lateral communication mode is dissipated to the energy of substrate,
To improve the quality factor of resonator.
Fig. 8 (a) and Fig. 8 (b) is the electrical impedance and conventional air cavity reflection formula resonator of resonator of the embodiment of the present invention
Electrical impedance comparison diagram, wherein Fig. 8 (b) is the partial enlarged view of the curve peak position of Fig. 8 (a).By Fig. 8 (a) and Fig. 8
(b) it is found that under film structure thickness and the identical situation of stepped construction, there are the resonator of transverse impedance mapped structure with
Capacitive part except the resonance frequency of traditional resonator is equal in magnitude.The difference of the two is concentrated mainly on series resonance frequency Fs
More than, near especially parallel resonance frequency Fp, increase has the resonator impedance of transverse impedance mapped structure by 1800 ohm, mentions
Rise to 3000 ohms.The quality factor of parallel resonance are promoted.
Fig. 9 is the schematic diagram of bulk acoustic wave resonator according to a second embodiment of the present invention.As shown in figure 9, in silicon substrate 904
Production above has hearth electrode 902, and hearth electrode material is acoustic impedance metal material, can be the metals such as molybdenum, aluminium, gold.In bottom electricity
Production has piezoelectric layer 903 on pole 902, and the material of piezoelectric layer 903 is the piezo-electric crystals such as zinc oxide or aluminium nitride, is received with a thickness of several hundred
Rice is to several microns.Production has top electrode 901 above piezoelectric layer 903.Production has air chamber 900 below hearth electrode.Hearth electrode
902 width are greater than air chamber width, to guarantee the support strength of superstructure.901 width of top electrode is less than air chamber width.
The common region that top electrode, hearth electrode are overlapped with air chamber is effective resonance range of resonator.Although top electrode compares air chamber
Small width can guarantee that the sound wave main energetic propagated between the hearth electrode of top is limited in effective district, but still remain transverse direction
The energy of leakage.On hearth electrode 902, production has acoustic impedance structure 905 and low acoustic impedance structure 906.Acoustic impedance knot
Structure 905 and low acoustic impedance structure 906 collectively form lateral acoustic impedance structure.Wherein, the inner boundary of acoustic impedance structure 906 with
The outer boundary of top electrode is defined as L1.The value of L1 is the numerical value more than or equal to 0, and L1 is 0 herein.The value of L1 ensure that vertical
Histogram not will receive the influence of transverse impedance mapped structure to the sound wave of propagation.In order to reach preferably to the sound wave laterally propagated
The limitation of mode, the width of acoustic impedance structure and the width of low acoustic impedance structure can choose 1/4 lateral conduct acoustic waves wavelength.
In the present embodiment, high and low impedance mapped structure has two layers respectively.When laterally propagating propagation outward, internal layer height is first passed around
Acoustic impedance structure 905 passes through internal layer low acoustic impedance structure 906 later, later, low with outer layer by outer layer acoustic impedance structure 905
Acoustic impedance structure 906 reflects.Therefore, acoustic wave energy is effectively limited in resonance at least through 5 secondary reflections by the sound wave laterally propagated
Device resonance effective district, realizes the raising to quality factor.
Figure 10 is the schematic diagram of the bulk acoustic wave resonator of third embodiment according to the present invention.As shown in Figure 10, it is served as a contrast in silicon
Bottom 1004 makes above hearth electrode 1002, and hearth electrode material is acoustic impedance metal material, can be the metals such as molybdenum, aluminium, gold.
Production has piezoelectric layer 1003 on hearth electrode 1002, and the material of piezoelectric layer 1003 is the piezo-electric crystals such as zinc oxide or aluminium nitride, thick
Degree is several hundred nanometers to several microns.Production has top electrode 1001 above piezoelectric membrane 1003.It is made below hearth electrode free
Air cavity 1000.The common region that top electrode, hearth electrode are overlapped with air chamber is effective resonance range of resonator.Although top electrode
The width smaller than air chamber can guarantee that the sound wave main energetic propagated between the hearth electrode of top is limited in effective district, but still
In the presence of the energy laterally revealed.On hearth electrode 1002, production has low acoustic impedance structure 1005, in low acoustic impedance structure 1005
Outside production has the air gap 1006.Low acoustic impedance structure 1005 and the height of the air gap 1006 are less than piezoelectric layer thickness.It is low
Acoustic impedance structure 1005 and the air gap 1006 collectively form lateral acoustic impedance structure.The acoustic wave mode laterally propagated is from resonance
It is most of by the reflection of 1005 inside of low acoustic impedance structure and the reflection of the air gap 1006 when device center is propagated to edge
Energy is constrained in effective coverage, improves electromechanical conversion efficiency, reduces energy loss, is realized and is mentioned to quality factor
It is high.
Figure 11 is the schematic diagram of the bulk acoustic wave resonator of fourth embodiment according to the present invention.As shown in figure 11, it is served as a contrast in silicon
Bottom 1104 makes above hearth electrode 1102, and hearth electrode material is acoustic impedance metal material, can be the metals such as molybdenum, aluminium, gold.
Production has piezoelectric layer 1103 on hearth electrode 1102, and the material of piezoelectric layer 1103 is the piezo-electric crystals such as zinc oxide or aluminium nitride, thick
Degree is several hundred nanometers to several microns.Production has top electrode 1101 above piezoelectric layer 1103.Production has air below hearth electrode
Chamber 1100.The common region that top electrode, hearth electrode are overlapped with air chamber is effective resonance range of resonator.Although top electrode ratio
The small width of air chamber can guarantee that the sound wave main energetic propagated between the hearth electrode of top is limited in effective district, but still deposit
In the energy laterally revealed.On hearth electrode 1102, production has lateral acoustic impedance structure 1105, the transverse direction acoustic impedance structure
1105 material is identical as the material of hearth electrode 1102 and top electrode 1101.The thickness and piezoelectricity of the transverse direction acoustic impedance structure 1105
The thickness of layer 1103 is identical.The acoustic wave mode laterally propagated from resonator central to edge when propagating, by lateral acoustic impedance
1105 inner reflection of structure, most of energy are constrained in effective coverage, improve electromechanical conversion efficiency, reduce energy damage
Consumption, realizes the raising to quality factor.
Figure 12 is the schematic diagram of the bulk acoustic wave resonator of fifth embodiment according to the present invention.As shown in figure 12, it is served as a contrast in silicon
Bottom 1204 makes above hearth electrode 1202, and hearth electrode material is acoustic impedance metal material, can be the metals such as molybdenum, aluminium, gold.
Production has piezoelectric layer 1203 on hearth electrode 1202, and the material of piezoelectric layer 1203 is the piezo-electric crystals such as zinc oxide or aluminium nitride, thick
Degree is several hundred nanometers to several microns.Production has top electrode 1201 above piezoelectric layer 1203.Production has air below hearth electrode
Chamber 1200.The common region that top electrode, hearth electrode are overlapped with air chamber is effective resonance range of resonator.Although top electrode ratio
The small width of air chamber can guarantee that the sound wave main energetic propagated between the hearth electrode of top is limited in effective district, but still deposit
In the energy laterally revealed.On hearth electrode 1202, production has very thin lateral acoustic impedance structure 1205, the transverse direction acoustic impedance
The material of structure 1205 is identical as the material of hearth electrode 1202 and top electrode 1201.The thickness of the transverse direction acoustic impedance structure 1205 is remote
Less than piezoelectric layer 1203.The acoustic wave mode laterally propagated from resonator central to edge when propagating, by lateral acoustic resistance resistive connection
1205 inner reflection of structure, most of energy are constrained in effective coverage, improve electromechanical conversion efficiency, reduce energy damage
Consumption, realizes the raising to quality factor.
The method of manufacture bulk acoustic wave resonator according to an embodiment of the present invention, may include steps of: on a silicon substrate
Groove is made, expendable material is filled in the groove, makes hearth electrode on the silicon substrate, is made on the hearth electrode horizontal
To acoustic impedance structure, the piezoelectric layer of the bulk acoustic wave resonator is made, top electrode is made in the piezoelectric layer surface, finally removes
The expendable material.And in above-mentioned steps, the production of lateral acoustic impedance structure and top electrode will make lateral acoustic resistance resistive connection
The inward flange of structure is located at except the resonance effective coverage of bulk acoustic wave resonator, in order to avoid influence normal resonance.
Lateral acoustic impedance structure may include the acoustic impedance structure and low acoustic impedance structure being laterally alternately arranged；Alternatively, horizontal
It is also possible to single high acoustic impedance materials or single low acoustic impedance material to the material of acoustic impedance structure.
It, can be to piezoelectricity layer material on silicon substrate and hearth electrode after depositing piezoelectric layer material when making piezoelectric layer
It is polished to obtain the piezoelectric layer of surfacing, also can be omitted the step of polishing, such piezoelectric layer surface has slightly
Protrusion, as shown in Figure 10, Figure 12.In addition, the thickness of lateral acoustic impedance structure can be equal to piezoelectric layer thickness, such as Fig. 6, Fig. 9, figure
Shown in 11；The thickness of lateral acoustic impedance structure might be less that piezoelectric layer thickness, i.e., lateral acoustic impedance structure are submerged in piezoelectric layer
In, as shown in Figure 10, Figure 12.
Figure 13 is the manufacturing flow chart of the bulk acoustic resonator structure of the embodiment of the present invention.As shown, Figure 13 (a) is in silicon
Groove is produced by etching technics on substrate, and expendable material will be filled in groove, expendable material therein can be dioxy
SiClx.Surface rubbing will be sunk to the bottom using polishing process later, as shown in Figure 13 (b).Then, photoetching work is utilized on silicon substrate
Skill makes hearth electrode Figure 13 (c).High acoustic impedance materials are deposited on hearth electrode and constitute transverse structure using photoetching technique,
It is deposited on the basis of this and etches low acoustic impedance material Figure 13 (d-e).Depositing piezoelectric layer material after the completion of transverse structure manufacture, and
It carries out polishing Figure 13 (f-g).Then, in smooth piezoelectric layer surface, deposition-etch top electrode.Finally gone using wet etching
Except sacrificial layer material obtains resonator Figure 13 (h-i) with transverse impedance mapped structure.
Above-mentioned specific embodiment, does not constitute a limitation on the scope of protection of the present invention.Those skilled in the art should be bright
It is white, design requirement and other factors are depended on, various modifications, combination, sub-portfolio and substitution can occur.It is any
Made modifications, equivalent substitutions and improvements etc. within the spirit and principles in the present invention, should be included in the scope of the present invention
Within.
Claims (10)
1. a kind of bulk acoustic wave resonator, including silicon substrate, hearth electrode, piezoelectric layer, the top electrode being sequentially arranged from bottom to top, and
Air chamber in the silicon substrate, which is characterized in that
The bulk acoustic wave resonator further includes lateral acoustic impedance structure, and the inward flange of the transverse direction acoustic impedance structure is located at the body
Except the resonance effective coverage of acoustic resonator.
2. bulk acoustic wave resonator according to claim 1, which is characterized in that the transverse direction acoustic impedance structure includes laterally handing over
For the acoustic impedance structure and low acoustic impedance structure of arrangement.
3. bulk acoustic wave resonator according to claim 1, which is characterized in that the material of the transverse direction acoustic impedance structure is single
One high acoustic impedance materials or single low acoustic impedance material.
4. bulk acoustic wave resonator according to claim 1, which is characterized in that the material of the transverse direction acoustic impedance structure and bottom
The material of electrode or top electrode is identical.
5. bulk acoustic wave resonator according to any one of claim 1 to 4, which is characterized in that the transverse direction acoustic resistance resistive connection
The thickness of structure is less than or equal to the piezoelectric layer thickness.
6. bulk acoustic wave resonator according to any one of claim 1 to 4, which is characterized in that the transverse direction acoustic resistance resistive connection
The width of structure is the odd-multiple of 1/4 lateral conduct acoustic waves wavelength.
7. a kind of method for manufacturing bulk acoustic wave resonator characterized by comprising
Groove is made on a silicon substrate；
Expendable material is filled in the groove；
Hearth electrode is made on the silicon substrate；
Lateral acoustic impedance structure is made on the hearth electrode；
Make the piezoelectric layer of the bulk acoustic wave resonator；
Top electrode is made in the piezoelectric layer surface；
The expendable material is removed,
Wherein, the inward flange of the lateral acoustic impedance structure is located at except the resonance effective coverage of the bulk acoustic wave resonator.
8. the method according to the description of claim 7 is characterized in that
The transverse direction acoustic impedance structure includes the acoustic impedance structure and low acoustic impedance structure being laterally alternately arranged；Alternatively,
The material of the transverse direction acoustic impedance structure is single high acoustic impedance materials or single low acoustic impedance material.
9. the method according to the description of claim 7 is characterized in that the step of making the piezoelectric layer of bulk acoustic wave resonator packet
It includes:
The depositing piezoelectric layer material on the silicon substrate and hearth electrode；
The piezoelectricity layer material is polished to obtain the piezoelectric layer of surfacing.
10. the method according to the description of claim 7 is characterized in that the thickness of the transverse direction acoustic impedance structure is less than or equal to
The piezoelectric layer thickness.
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