CN1801614A - Piezoelectric thin film resonator with mass loading in perimeter - Google Patents
Piezoelectric thin film resonator with mass loading in perimeter Download PDFInfo
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- CN1801614A CN1801614A CN 200510079662 CN200510079662A CN1801614A CN 1801614 A CN1801614 A CN 1801614A CN 200510079662 CN200510079662 CN 200510079662 CN 200510079662 A CN200510079662 A CN 200510079662A CN 1801614 A CN1801614 A CN 1801614A
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- 239000000463 material Substances 0.000 abstract description 14
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 11
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
Abstract
In an FBAR resonator structure (FBAR) made of electrodes sandwiching a piezoelectric material, the intersection of the two conducting electrodes defines the active area of the acoustic resonator. To improve the Q of the resonator the active area is divided into concentric areas by a frame or annulus near the perimeter of one of the electrodes. The materials chosen are such that the acoustic impedance of the material within the annulus or frame has a first value, the acoustic impedance of the material outside the annulus or frame has a second value and the acoustic impedance of the annulus has a third value greater than either the first value or the second value., and a central region. This arrangement is said to suppress lateral modes within the resonator.
Description
Technical field
Do not have
Background technology
Typical thin film bulk acoustic resonator (FBAR) is a kind of bottom electrode made by (for example) molybdenum and three bed devices of a top electrodes of comprising.For example the piezoelectric of aluminium nitride (AlN) is between described two electrodes.As people such as Ruby amortizing of issuing on May 9th, 2000 to the United States Patent (USP) the 6th of AgilentTechnologies, 060, disclose in No. 818 " SBAR Structures and Method ofFabrication of SBAR/FBAR Film Processing Techniques for the Manufacturingof SBAR/FBAR Filters ", this device is positioned on the recess or " swimming pool " that is formed in the substrate (for example silicon), wherein fills this recess with an expendable material.When removing described expendable material, be fixed in the silicon substrate place at the resonator edge around described periphery and produce one " free-standing films ".Fig. 1 shows that one is positioned on the pond and is fixed on the edge in described pond and then is connected to (cleaved) part of splitting of the prior art acoustic resonator of a pad.
The effective area of this resonator is by overlapping the defining between described top electrodes and the bottom electrode.As people such as Ruby amortizing of issuing on May 7th, 2002 to the United States Patent (USP) the 6th of Agilent Technologies, 384, disclose in No. 697 " Cavity spanning Bottom Electrode of a Substrate-Mounted BulkAcoustic Resonator ", bottom electrode strides across whole swimming pool usually so that mechanical strength is maximized.As people such as Ruby amortizing of issuing on July 23rd, 2002 to the United States Patent (USP) the 6th of Agilent Technologies, 424, institute's teaching in No. 237 " Bulk Acoustic Perimeter Reflection System " is to draw in described swimming pool inside (possible place) with the maximized amount of the Q of described system with top electrodes.
Resonator also can comprise a basic mass loading layer that covers described top electrodes entire area.This layer reduced the resonance frequency of described resonator.For the filter that uses ladder, half ladder or lattice type topological structure, there is difference in this layer tolerance frequency.Half terraced filter is made by cascade series resonator (seriesresonator) and parallel resonator (shunt resonator).Mass loading has reduced the frequency of the parallel resonator relevant with series resonator.
For successfully using these filters, the factor of quality or the Q that comprise each resonator of described filter must be very high.The quantity that is stored in radio frequency (rf) energy in the described resonator that Q is removed by the amount of energy of resonator loss in every way.If there is not energy loss in described resonator, Q will be infinity so.The actual energy that is stored in the resonator of this frequency exists with the form of mechanical movement.Yet, always have some losses.A kind of loss mechanism is hot acoustic loss (thermalacoustic loss), and the mechanical energy (for example, system as heat and the energy of loss) that wherein is converted into heat is not easy to be converted into the rf energy again.
The energy loss of edge has two to come former.The first, the acoustic energy that changes into the lateral mode form can and escape into the described substrate from described resonator side leakage.Resonator has only recovered few part of described energy.The second, because these edges expose to the open air in various dry types and wet chemical treatment, the profile of film edge and quality are relatively poor usually.Lateral mode will carry out " sampling " and pass through disperseing and the loss of energy by the sound migration (acoustic migration) of edge's atom from described Roughen Edges to these Roughen Edges.Therefore, the interaction with lateral mode and described resonator edge minimizes very important.
Summary of the invention
By producing the Q that increases the lossy lateral mode in the thin film bulk acoustic resonator (FBAR) through the acoustic impedance mismatch that precision defines, the width of the about quarter-wave in edge (or a plurality of quarter-wave) of the described FBAR effective area of distance for example, make any defective is being carried out " sampling " before, lateral mode is edge reflections since then.Q through improving has strengthened the filter that is made of the FBAR resonator construction and the productive rate of duplexer.
Improve total Q of described resonator by the Q that captures described lateral mode better and improve these lateral modes.This has improved the Q of the whole resonator system that comprises dominant mode conversely again.This finishes by at least one that a ring is added in two electrodes along the periphery that defines the effective area of described resonator.
Resonator structure (FBAR) is made by two electrodes that piezoelectric is clipped in the middle.The crossing effective area that defines described acoustic resonator of two conductive electrodes.Described effective area is divided into two concentric regions: a periphery or frame and a central area.To add in two conductive electrodes one to improve described electrical property (Q) once ring.
Description of drawings
Fig. 1 is the SEM of the cross section of a prior art FBAR.An a kind of microphoto of the sample that splits of early stage pattern FBAR resonator.In this photo, described film is suspended from the swimming pool and is fixed in edge.The film of pattern recently is supported on almost each position on the edge.
Fig. 2 a and 2b illustrate that a Utopian Q circle and becomes the Q circle of mark resonator (apodized resonator) on Smith chart.These figure also indicate the R of described resonator
s, f
s, R
pAnd f
pAnd Q
pWith R
pAnd Q
sWith R
sBetween relation.
Fig. 3 a-c is the schematic cross-section of a free-standing FBAR.Fig. 3 a shows a prior art FBAR.Fig. 3 b shows that a prior art with scrobicular ring becomes mark FBAR.Fig. 3 c shows the present invention.
Fig. 4 a be one have among Fig. 3 a the Q circle of square resonator of given cross section.Marked and drawed the amplitude of the relation curve of Γ and frequency among Fig. 4 b.
Fig. 5 a be one have among Fig. 3 a the Q circle of change mark resonator of given cross section.Marked and drawed the amplitude of the relation curve of Γ and frequency among Fig. 5 b.
Fig. 6 is a diagram w-k figure of I class and II class piezoelectric.The diagram w-k figure of the difference between one outstanding I class and the II class piezoelectric.The frequency of ω cut-off point and f
s(resonance frequency of extension pattern or piston mode) is identical.
Fig. 7 is the data through measuring and harmonizing of w-k curve chart (being commonly referred to Lamb wave) that are used for preceding 4 lateral modes (S0, S1 and A0, A1) of the resonator shown in Fig. 3 a.
Fig. 8 a and 8b are the Q circles of resonator shown in Fig. 3 a and the 3b (do not have ring and have a scrobicular ring).Marked and drawed the amplitude of the relation curve of the Γ of described two cross sections and frequency among Fig. 8 b.
Fig. 9 a and 9b are the Q circles of resonator shown in Fig. 3 a and the 3c (do not have ring and have a bulge loop).Marked and drawed the amplitude of the relation curve of the Γ of described two cross sections and frequency among Fig. 9 b.
Figure 10 a is half ladder (half ladder) filter.Figure 10 b shows full ladder (full ladder) filter.
Figure 11 shows half terraced filter response.
Figure 12 a-c shows that expression one is in the parallel resonator that Q is round, a parallel resonator and with mass loading thickness (ML1) has another mass loading (ML1 and ML2) of the series resonator of half terraced topological structure.Black arrow is indicated the position of passband on the Q circle of described filter.
Except that having added two Q circles showing a described recessed frame resonator response and a protruding frame resonator response, Figure 13 a-c shows identical content with Figure 12 a-c.As seen, because the Q on major part circle is lower than the prior art FBAR of a standard or has the FBAR of a protruding frame, recessed frame will significantly reduce filter response; On the contrary, protruding frame has then improved Q by correlated frequency.
Figure 14 a and 14b show four filter responses.Figure 14 b is the enlarged drawing of described passband.This figure is two different Design of Filter that have and do not have protruding frame on described parallel resonator.Article two, redness and purpureal curve are standard FBAR resonator, and two blue curve are that wherein parallel resonator has two Design of Filter of a protruding frame.
Embodiment
The dominant mode of one thin film bulk acoustic resonator (FBAR) is longitudinal extension pattern or " piston " pattern.Excite this pattern by two electrodes that alternating voltage are applied to be in the FBAR resonance frequency.Described piezoelectric is a mechanical energy with the Conversion of energy of electric energy form.Have among the desirable FBAR of unlimited thin electrode one, the velocity of sound that equals piezoelectric medium when applied frequency is during divided by the described piezoelectric medium thickness of twice: f=v
Ac/ (2*T), wherein T is the thickness of described piezoelectric medium, and v
AcBe the sound phase velocity, resonance takes place.For the resonator with limited thickness electrode, this equation is revised by the weighting speed and the thickness of described electrode.
We can come from understanding the Q of a resonator aspect quantity and the quality by the ratio of reflected energy when marking and drawing when frequency change on the Smith chart and application energy (Γ).Along with the frequency of using energy increases, the amplitude/phase of FBAR resonator scans out (sweep out) circle on Smith chart, and this circle is called the Q circle.Described Q justifies the first time and the frequency f of real axis (trunnion axis) intersection corresponding to piston mode
sPractical impedance (measuring with ohm) is R
sAlong with the Q circle continues around the Smith chart periphery, it intersects with real axis once more.Described Q circle is denoted as f with second point that real axis intersects
p, i.e. the anti-resonance frequency of FBAR.The residue real part of described resistance is denoted as R
pFig. 2 a shows the Q circle of the desirable FBAR of a no spurious resonance.Fig. 2 b shows the Q circle of a prior art FBAR.The visible spurious resonance in 1/4th places, southwest, bottom at the Q circle is lower than f
sFor filter applies, wish to minimize R
sAnd maximization R
pQualitatively, the limit of described Q circle " embracing " Smith chart is tight more, and the Q of device is high more.If there is the such thing of lossless resonator, so described Q circle will have a radius and will be positioned at the edge of Smith chart.
For any piezoelectric, except piston mode, also there is lateral mode.These patterns are very easy to be excited.The boundary condition of generation lateral mode resonance is defined by the edge of resonator.Fig. 3 a is the cross section embodiment of a prior art FBAR.The zones of different of this resonator of dotted lines.Fig. 3 b explanation one has the prior art FBAR of a depression periphery on the end face of described electrode.For two examples, described FBAR comprises II class piezoelectric, for example AlN.
In Fig. 3 a, the edge that is defined by the patterning of described top electrodes forms one group of boundary condition for lateral mode resonance, and the edge of described swimming pool forms another group boundary condition for lateral mode resonance.Lateral mode resonance is called spurious mode, and since its energy can be coupled out described resonator and generally be undesirable.
With the minimized method of lateral mode is with described resonator edge " change mark ".Becoming mark is one group of any two design rule that the edge is parallel that do not allow resonator.In addition, as people such as Larson assigning of issuing on April 10 calendar year 2001 to the United States Patent (USP) the 6th of Agilent Technologies, 215, institute's teaching in No. 375 " Bulk Acoustic wave Resonators with Improved Lateral Mode Suppression ", " right angle " turning is replaced by the angle of conscientiously selecting, so that any resonance all reduces 10% or more than its initial strength of being seen in a square or rectangle resonator.Fig. 2 b shows a Q circle that becomes mark FBAR.Although note that to seem to have eliminated and be higher than f
sDiscrete spurious resonance, but be lower than f
sSpurious mode still more obvious.After using apodization, the strong unique spurious mode that exists is the resonance fs of those frequencies less than " piston " pattern
sPattern.This reflects that AlN is the fact of an II class piezoelectric.
Be higher than f for existence
sMore weak side direction acoustic wave mode, apodization forces the many reflections of parasitic lateral mode experience from not parallel edge, reduces basic parasitic resonance frequency thus.Therefore, the resonance of correlated frequency (the PCS frequency band that for example, is used for the CDMA phone in 1850 to the 1910MHz transmission bands) existence is in the high harmonic wave of basic parasitic lateral mode.Yet, energy is coupled to the contrary of the order that shows as nth harmonic in these patterns.If people are by using apodization with a v
Ac50 subharmonic of/2L lateral mode forward 10 to, (path of supposing the reflection lateral mode of beating in resonator has everywhere taken place about 10 to 000 subharmonic before finishing a loop, 000 secondary reflection), then the coupling of this parasitic lateral mode has reduced 50/10,000; Wherein L is the lateral spacing (because lateral dimensions is the size at the piston mode back side than big approximately 50 to 100 times-this thickness of thickness of vertical thickness, so 50 subharmonic are about suitable harmonic wave) between the square resonator edge.
An aspect of the method for this " smearing " lateral mode spurious resonance be each lateral mode resonance almost in each frequency (but not at minority and basic v
AcThe discrete frequency that the nth harmonic of/2L is relevant) all loss less energy.The influence of using apodization on the Q circle is that it makes the Q circle through measuring smooth-out, but cause the Q circle from the Smith chart edge to in-draw, i.e. the lower Q of indication.
Fig. 4 a and b show the Q circle (4a) of a square resonator and the relation curve (4b) of Γ and frequency thereof.Fig. 5 a and b show that one becomes the Q circle (5a) of mark resonator and the relation curve (5b) of Γ and frequency thereof.Γ is a reflection coefficient.
In W0106647A1 " Resonator Structure and Filter Comprising a ResonatorStructure ", people's teachings such as Kaitila reduce owing to occur in the method for the spurious mode that near the lateral mode of piston mode frequency causes.
The w-k curve chart of outstanding I class of Fig. 6 and II class piezoelectric membrane (showing) as people such as Kaitila.For free-standing films, Kaitila teaching ZnO is an I class piezoelectric, and aluminium nitride (AlN) is an II class piezoelectric.In Fig. 6, solid line is represented the actual K value of piezoelectric, and dotted line is represented the K value imagined.For the K value of the imagination, propagating wave is a kind of ripple by the index law decay, and irrelevant with described discussion.For actual K value, described ripple is a kind of capable ripple or standing wave.The point of k=0 is represented cut-off frequency and is the fundamental frequency of extension pattern or vertical pattern among Fig. 6.Under the situation of ZnO, critical lateral mode exists with the frequency that is higher than the piston mode frequency.Under the situation of AlN, critical lateral mode (critical lateral mode) (S1) exists with the frequency that is lower than the piston mode frequency.
Fig. 7 shows that we have II class piezoelectric, wherein can exist to be lower than cut-off frequency (f for the prior art FBAR (as shown in Fig. 3 a) that uses AlN as piezoelectric
s) strong lateral mode.This pattern be as 25 to 30 July in 2004 at Colorado, in the QNDE meeting that Golden holds by the S1 pattern of Telschow institute's teaching in " Laser Acoustic Imaging of Film Bulk Acoustic Resonator (FBAR) Lateral Mode Dispersion ".Yet, have other symmetric pattern (S0, S2) and the dissymmetric mode (A0, A1, A2) that are lower than and are higher than cut-off frequency.A little less than should noticing that these patterns relatively.
The Kaitila teaching must be used a recessed frame in order to reduce the lateral mode spurious resonance of the free-standing films of using AlN (II class piezoelectric).This structure is showed in Fig. 3 b.
In Fig. 8, we can see described structure (with comparing of no recessed frame) Q circle (Fig. 8 on a) effect and the graph of relation of Γ and frequency.As Kaitila institute teaching, be lower than f
sSpurious resonance (1/4th places, southwest of Smith chart) significantly reduced really.
Yet seen in Fig. 8 a, the Q circle with FBAR of recessed frame has lower Q.In big many places (locating from 9 up to about 4), the Q circle with FBAR of recessed frame has significantly lower Q.If the Q of resonator (locating at 4 at 9 locates) in this zone reduces, filter will seriously suffer falling of frequency response and insert loss so.
The reason that Q reduces in this zone is: the acoustic impedance in 2 (the seeing Fig. 3 b) of zone is positioned between the acoustic impedance of resonator middle section (zone 1) and frame exterior domain (zone 3).If the width in zone 2 is near a certain width, sunk area can alleviate the acoustic impedance mismatch in resonator middle section and outlying zone so.Therefore, the energy that becomes lateral mode from the basic extension mode-conversion of middle section is easier of resonator " leakage ".Say that specifically though recessed frame helps the S1 lateral mode that suppresses very strong, with respect to the more symmetry and the asymmetric lateral mode of height mode, in fact it increased the leakage of energy.
In the present invention, add a protruding frame to periphery producing a ring, thereby make the S1 lateral mode significantly strengthen.Yet as shown in Fig. 3 c, protruding frame (supposing correctly to have selected width) serves as the acoustic impedance mismatch between area I and the area I II.Protruding frame adds quality and produces described acoustic impedance mismatch.The extra increase of this quality can be more with the electrode identical materials or have more hyperbaric material (as tungsten) or have more low-gravity such as dielectric material (for example, SiO by adding
2Or AlN) finishes.
Fig. 9 a and 9b show that periphery has and do not have the influence of change mark resonator on the Q circle of protruding frame.The Smith chart of two Q circles of Fig. 9 a displaying is represented, and Fig. 9 b shows the relation curve of Γ and frequency.Seen at arbitrary figure (a or b), add protruding frame increased greatly seen at Smith chart southwest 1/4th " vibration " or " turning a somersault " (loop-de-loops).Yet from " 9 point " beginning approximately, the Q with FBAR of protruding frame more closely " embraces " edge of Smith chart, therefore demonstrates higher Q on most of frequency range.
In this illustrative example, be for the FBAR filter that transmits transmission signals in 1930 to 1990MHz zones (WCDMA application) for its function, the thickness of described frame is about 5 μ m for～400A and width.The material that is used for described frame and top electrodes is a molybdenum.Zhou Bianhuan continues～1000 ohm of R that add 50 ohm of resonators of PCM (PCM=process control monitor) to
pPeople can be at the Q circle (as measured on the network analyser such as Agilent 8510 network analysers) and the crossing for the second time some place measure R of the real axis of Smith chart right-hand side of a resonator
pThe Q circle is f with the frequency of real axis intersection
p, and the real part of resonator impedance is R
pConsider f for integrality
sAnd R
sBe resonator and Smith chart left-hand side the real axis frequency and the value of the real part of the complex impedance of intersection for the first time.R
pBy simple through testing definite relational expression R
p=1.18kt
2* Q
p* Z
oAnd directly relevant with Q, kt wherein
2Be effective coupling coefficient and Z
oBe the resonator impedance, for example 50 ohm.When relatively have frame (Fig. 3 c) and do not have frame (during the parallel resonator of a) two of Fig. 3, kt
2For two PCM resonators is identical.Because described zone is identical for two parallel resonators, Z
oBe identical, so Q
pIt is the parameter that has improved.Usually, visible R on Standard PC M resonator
pThe scope of s is 1000 to 2000 ohm, and has on the PCM resonator of protruding frame R
pThe scope of s is 2000 to 3000 ohm.The present invention has improved R
pRather than resonator is at f
sThe real resistance R at place
s
Fig. 3 c illustrates one embodiment of the present of invention.Thin film bulk acoustic resonator (FBAR) is a three-ply sandwich structure, and it comprises a bottom electrode and top electrodes of being made by molybdenum.For example the piezoelectric of aluminium nitride (AlN) is between described two electrodes.This three-ply sandwich structure is positioned on the depression or " swimming pool " that is formed in the substrate (for example silicon), wherein fills this depression with an expendable material.When removing described expendable material, be fixed in the silicon substrate place at the resonator edge around described periphery and produce one " free-standing films ".
Effective area is defined as the overlapping of top electrodes and bottom electrode.Ring corresponding to the effective area periphery is added in two electrodes one.Ring material can be identical with the material (for example, molybdenum) of forming top electrodes and bottom electrode, but also can be by comprising such as SiO
2, AlN or Si
3N
4Other dielectric material make.Perhaps, also can use an outer shroud to replace protruding frame, but described outer shroud is made by having more the material of acoustic impedance (for example, tungsten) around described effective area and its thickness are identical with arbitrary electrode.
Ring size is through selecting to improve as to go up measured electrical characteristics at resonator (or making on the filter of these resonators).Method, finite element modeling analysis or other analytical solution determine that the width of described frame and thickness determines by experiment for these.
The resonance frequency f0 and the acoustic impedance η 1 that have piston mode corresponding to the zone 1 of effective area middle body.Zone 2 peripheries corresponding to effective area.3 perimeters, zone corresponding to effective area, and zone 4 is the zone on the silicon substrate.For each zone, all there are corresponding resonance frequency and acoustic impedance.In zone 4, owing to the thickness of described substrate causes described fundamental resonance extremely low.
Though described illustrative embodiment is showed the top surface that ring is added to top electrodes, described ring can be positioned on the top or lower surface of arbitrary electrode.Described ring can be made by conduction or dielectric material.
Referring to Fig. 3 c, increase the acoustic impedance that quality has effectively increased zone 2 along periphery.Therefore, produced bigger impedance mismatching between middle section and the middle section outside.
Following situation will appear: resonator or use a kind of level and smooth especially lateral mode of filter needs of a large amount of described resonators freely to respond; It is less factor that smoothness in the filter response is compared with required Q.
Figure 10 a and 10b show two examples of filter topology: be respectively half ladder and full ladder.The present invention is applicable to the wave filter technology of the high Q of any needs.
Figure 11 shows that one has the response of typical case's half terraced filter of two " zero points " and two " limits ".Be two minimum values and described limit is two maximums described zero point.The zero point of lower frequency is relevant with the extension resonance (" piston " pattern) of parallel resonator.Any " the turning a somersault " that be lower than this frequency of adding or vibration can not influence passband response.Because AlN is an II class resonator, the spurious mode that has therefore strengthened the increase that S1 caused by add a frame on parallel resonator all is lower than the f of parallel resonator
s
Figure 12 a-c is the position of described passband on the Q circle.For the series resonator shown in Figure 10.In Figure 12 a, passband is positioned on the Q circle " 7 point " and locates and between " 11 point " located approximately.Ripple in the passband is subjected to the negative influence of spurious resonance owing to the S1 lateral mode.
Yet, if observe the band connection frequency place on the Q circle that is positioned at expression parallel resonator (Figure 12 b and 12c), can understand for a kind of mass loading, the scope of band connection frequency is to locate to about " 4 point " from about " 10 point ", and for another kind of mass loading, the scope of described band connection frequency is to locate to " 5 point " from " 1 point ".In all cases, be lower than f
sExtra " vibration " can not influence filter.
Figure 13 a-c shows the Q circle of outstanding recessed frame and protruding frame.Obvious recessed frame can cause that filter response reduces.This point in Figure 14 a and 14b as can be seen.Two and half ladder designs are shown as has and does not have protruding frame (therefore 4 curves are arranged) on parallel resonator.For two designs, the interpolation of frame significantly helps the insertion loss and the passband response of filter.
Claims (16)
1. device that is used to capture the energy in the frequency band, it comprises:
One first electrode;
One is positioned near described first electrode and second electrode of top;
The overlapping effective area that defines of described first electrode and described second electrode;
One inserts the piezoelectric sheet between described first electrode and described second electrode;
One is positioned a lip-deep ring of one in described first electrode and second electrode;
Zone in the wherein said ring has one first acoustic impedance, and described ring has a rising tone impedance, and the outer zone of described ring has one the 3rd acoustic impedance; With
Described rising tone impedance is greater than described first and described the 3rd acoustic impedance.
2. device according to claim 1, wherein said ring is along the location, periphery of described second electrode.
3. peripheral directly relative in described first electrode and with described second electrode of device according to claim 1, wherein said loop mapping.
4. device according to claim 1, wherein said ring be integrated in described first and described second electrode in described one in.
5. device according to claim 1, wherein:
Described one in described first and second electrodes has one first proportion; With
Described ring has second proportion greater than described first proportion.
6. device according to claim 1, wherein:
Described one in described first and second electrodes has one first proportion; With
Described ring has second proportion less than described first proportion.
7. device according to claim 6, described ring comprises a dielectric material.
8. device according to claim 6, described ring comprises a metal material.
9. device according to claim 1, it further comprises a substrate that has a cavity in a surface, the described cavity of the described first electrode bridge joint.
10. device according to claim 9, wherein said ring is along the location, periphery of described second electrode.
11. peripheral directly relative in described first electrode and with described second electrode of device according to claim 9, wherein said loop mapping.
12. device according to claim 9, wherein said ring be integrated in described first and described second electrode in described one in.
13. device according to claim 9, wherein:
Described one in described first and second electrodes has one first proportion; With
Described ring has second proportion greater than described first proportion.
14. device according to claim 9, wherein:
Described one in described first and second electrodes has one first proportion; With
Described ring has second proportion less than described first proportion.
15. device according to claim 14, described ring comprises a dielectric material.
16. device according to claim 14, described ring comprises a metal material.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61525504P | 2004-10-01 | 2004-10-01 | |
| US60/615,255 | 2004-10-01 | ||
| US10/990,201 | 2004-11-15 | ||
| US10/990,201 US7280007B2 (en) | 2004-11-15 | 2004-11-15 | Thin film bulk acoustic resonator with a mass loaded perimeter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1801614A true CN1801614A (en) | 2006-07-12 |
| CN1801614B CN1801614B (en) | 2010-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200510079662 Active CN1801614B (en) | 2004-10-01 | 2005-06-24 | Piezoelectric thin film resonator with mass loading in perimeter |
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| Country | Link |
|---|---|
| JP (1) | JP5005903B2 (en) |
| KR (1) | KR20060053994A (en) |
| CN (1) | CN1801614B (en) |
| GB (1) | GB2418791A (en) |
| TW (1) | TWI365603B (en) |
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- 2005-05-19 TW TW094116372A patent/TWI365603B/en not_active IP Right Cessation
- 2005-06-24 CN CN 200510079662 patent/CN1801614B/en active Active
- 2005-09-30 JP JP2005286738A patent/JP5005903B2/en active Active
- 2005-09-30 KR KR1020050092358A patent/KR20060053994A/en not_active Application Discontinuation
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2006109472A (en) | 2006-04-20 |
| TW200620820A (en) | 2006-06-16 |
| CN1801614B (en) | 2010-06-16 |
| JP5005903B2 (en) | 2012-08-22 |
| GB2418791A (en) | 2006-04-05 |
| KR20060053994A (en) | 2006-05-22 |
| GB0520078D0 (en) | 2005-11-09 |
| TWI365603B (en) | 2012-06-01 |
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