TW200620820A - A thin film bulk acoustic resonator with a mass loaded perimeter - Google Patents

A thin film bulk acoustic resonator with a mass loaded perimeter

Info

Publication number
TW200620820A
TW200620820A TW094116372A TW94116372A TW200620820A TW 200620820 A TW200620820 A TW 200620820A TW 094116372 A TW094116372 A TW 094116372A TW 94116372 A TW94116372 A TW 94116372A TW 200620820 A TW200620820 A TW 200620820A
Authority
TW
Taiwan
Prior art keywords
acoustic resonator
thin film
bulk acoustic
film bulk
mass loaded
Prior art date
Application number
TW094116372A
Other languages
Chinese (zh)
Other versions
TWI365603B (en
Inventor
hong-jun Feng
R Shane Fazzio
Richard Ruby
Paul Bradley
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/990,201 external-priority patent/US7280007B2/en
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of TW200620820A publication Critical patent/TW200620820A/en
Application granted granted Critical
Publication of TWI365603B publication Critical patent/TWI365603B/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).
TW094116372A 2004-10-01 2005-05-19 A thin film bulk acoustic resonator with a mass loaded perimeter TWI365603B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61525504P 2004-10-01 2004-10-01
US10/990,201 US7280007B2 (en) 2004-11-15 2004-11-15 Thin film bulk acoustic resonator with a mass loaded perimeter

Publications (2)

Publication Number Publication Date
TW200620820A true TW200620820A (en) 2006-06-16
TWI365603B TWI365603B (en) 2012-06-01

Family

ID=35395169

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116372A TWI365603B (en) 2004-10-01 2005-05-19 A thin film bulk acoustic resonator with a mass loaded perimeter

Country Status (5)

Country Link
JP (1) JP5005903B2 (en)
KR (1) KR20060053994A (en)
CN (1) CN1801614B (en)
GB (1) GB2418791A (en)
TW (1) TWI365603B (en)

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CN108574473A (en) * 2017-03-14 2018-09-25 英飞凌科技股份有限公司 Resonator and method for providing resonator

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US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
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JP2012244616A (en) 2011-05-24 2012-12-10 Taiyo Yuden Co Ltd Piezoelectric thin film resonator, filter, and module
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JP5918522B2 (en) 2011-12-12 2016-05-18 太陽誘電株式会社 Filters and duplexers
JP5994850B2 (en) * 2012-05-22 2016-09-21 株式会社村田製作所 Bulk wave resonator
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CN103296993A (en) * 2013-04-11 2013-09-11 天津大学 Resonator and manufacturing method thereof
JP5591977B2 (en) * 2013-04-30 2014-09-17 太陽誘電株式会社 Piezoelectric thin film resonator, filter, duplexer, communication module, and communication device
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JP6325798B2 (en) 2013-11-11 2018-05-16 太陽誘電株式会社 Piezoelectric thin film resonator, filter and duplexer
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JP6368298B2 (en) 2015-12-14 2018-08-01 太陽誘電株式会社 Piezoelectric thin film resonator, filter and duplexer
JP6510987B2 (en) 2016-01-14 2019-05-08 太陽誘電株式会社 Piezoelectric thin film resonator, filter and duplexer
JP6469601B2 (en) 2016-02-05 2019-02-13 太陽誘電株式会社 Piezoelectric thin film resonator, filter and duplexer
JP6556099B2 (en) 2016-06-16 2019-08-07 太陽誘電株式会社 Piezoelectric thin film resonator, filter and multiplexer
CN108023563B (en) * 2016-11-01 2021-03-26 稳懋半导体股份有限公司 Bulk acoustic wave resonator with mass adjusting structure and application thereof to bulk acoustic wave filter
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JP6903471B2 (en) 2017-04-07 2021-07-14 太陽誘電株式会社 Piezoelectric thin film resonators, filters and multiplexers
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Also Published As

Publication number Publication date
GB2418791A (en) 2006-04-05
CN1801614B (en) 2010-06-16
GB0520078D0 (en) 2005-11-09
KR20060053994A (en) 2006-05-22
JP2006109472A (en) 2006-04-20
JP5005903B2 (en) 2012-08-22
CN1801614A (en) 2006-07-12
TWI365603B (en) 2012-06-01

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MM4A Annulment or lapse of patent due to non-payment of fees