CN103296993A - Resonator and manufacturing method thereof - Google Patents

Resonator and manufacturing method thereof Download PDF

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CN103296993A
CN103296993A CN 201310124937 CN201310124937A CN103296993A CN 103296993 A CN103296993 A CN 103296993A CN 201310124937 CN201310124937 CN 201310124937 CN 201310124937 A CN201310124937 A CN 201310124937A CN 103296993 A CN103296993 A CN 103296993A
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庞慰
张孟伦
张�浩
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天津大学
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Abstract

The invention discloses a resonator and a manufacturing method of the resonator. The manufacturing method comprises the steps that an alignment structure is formed above a piezoelectric layer, wherein the alignment structure comprises multiple layers needing to be aligned and an alignment layer used for aligning the layers; the alignment layer is used for removing the edge portions of part of or all the layers, and the edges of the layers after removing are aligned to each other. According to the resonator and the manufacturing method of the resonator, through the arrangement of the alignment layer, automatic alignment can be carried out on the images of different layers in the resonator, the problem that the performance of the resonator (and a filter and other devices formed by the resonator) is damaged due to the fact that the images of the different layers are not aligned is avoided, and the performance of the devices can be effectively improved.

Description

谐振器及其制造方法 Resonator and manufacturing method thereof

技术领域 FIELD

[0001] 本发明涉及谐振器工艺领域,并且特别地,涉及一种谐振器及其制造方法。 [0001] The present invention relates to a process field resonator, and in particular, to a method of manufacturing the resonator.

背景技术 Background technique

[0002] 薄膜体声波(BAW)谐振器和滤波器具有高品质因数、较高的功率承受能力、低成本的硅片封装技术以及与集成电路(IC)技术的兼容性,使得它们广泛应用于无线移动通信设备中。 [0002] The thin film bulk acoustic wave (the BAW) resonators and filters having a high quality factor, high power handling, low cost and compatibility with silicon technology packaging an integrated circuit (IC) technology, so that they are widely used in a wireless mobile communication device. 一个最简单的BAW谐振器结构包括两个金属电极以及夹在两电极间的压电层,如氮化铝(AIN)、氧化锌(zinc oxide)和压电陶瓷(PZT)。 A simple BAW resonator structure comprises two metal electrodes and sandwiched between the two electrodes of the piezoelectric layer, such as aluminum nitride (AIN), zinc oxide (zinc oxide), and piezoelectric ceramic (PZT). BAW谐振器通常使用声反射结构与支撑基底进行声学隔离,声反射结构包括在支撑BAW谐振器的薄膜下方形成的空气腔或者由高、低声阻抗材料交替堆叠形成的声反射镜。 BAW resonators typically use acoustic reflector structure and the supporting substrate is acoustically isolated from acoustic reflective structure comprises an air cavity below the support BAW resonators or film formed from a high, low acoustic impedance material are alternately stacked to form the acoustic mirror.

[0003] 在BAW滤波器中,通常需要由不同谐振频率的BAW谐振器(串联谐振器和并联谐振器)通过电学连接或者声耦合的方式构成,并联谐振器的谐振频率比串联谐振器的谐振频率低。 [0003] In BAW filters typically required by the BAW resonators of different resonance frequencies (series resonators and the parallel resonators) are connected by way of electrical or acoustic coupling configuration, the resonant frequency of the parallel resonance of the resonator than the series resonator low frequency. BAff谐振器的谐振频率主要由谐振器各层膜厚决定,在基底上同时制作串联谐振器和并联谐振器的其中一种方法为同时制作串联谐振器和并联谐振器后在并联谐振器的上电极之上再沉积质量负载。 BAff resonance frequency of the resonator is determined mainly by the thickness of the layers of the resonator, a method wherein on a substrate while making the series resonator and a parallel resonator is made while the series resonators and the parallel resonators of the parallel resonator mass loading on the electrode redeposition. 由于并联谐振器和串联谐振器相比多了质量负载,并联谐振器的谐振频率比串联谐振器的频率低,且并联谐振器的谐振器频率和串联谐振器的谐振频率的差值仅由质量负载的材料和厚度决定,简化了BAW滤波器的设计和加工。 Because the mass load compared to more parallel resonators and the series resonators, the resonant frequency of the parallel resonator is lower than the frequency of series resonators, the resonant frequency and the difference of the resonant frequency of the series resonator only the parallel resonator mass the material and thickness determines the load, simplifying the design and processing BAW filters. 当质量负载的图案边缘和上电极的图案边缘重合时,质量负载不会造成BAW谐振器性能的下降,BAW滤波器也将保持高性能。 When the pattern edge of the pattern and the upper electrode coincides with the edge of the mass of the load, the load will not cause a decline in the quality of performance of the BAW resonators, BAW filter will maintain high performance. 如果质量负载与并联谐振器的上电极的图案未对准,将导致谐振器性能受损,同时未对准的程度也将影响并联谐振器的谐振频率,使得并联谐振器的实际谐振频率偏移设计谐振频率,最终导致BAW滤波器的性能的下降。 If the electrode pattern on the parallel resonator mass load misalignment will result in damage to the performance of the resonator, while the degree of misalignment will affect the resonant frequency of the parallel resonator, so that the actual resonance frequency of the parallel resonator offset design of resonant frequency, resulting in degradation of performance of BAW filters. 并且,在某些情况下,串联谐振器同样可能包括质量负载,而如果串联谐振器中的质量负载与电极未对准,同样会降低串联谐振器的性能。 And, in some cases, the series resonator comprises a mass load is equally possible, if the mass load in series with the resonator electrode misalignment can also degrade the performance of the series resonator.

[0004] 图1A所示为带有质量负载的并联谐振器100的截面图。 [0004] Figure 1A is a cross-sectional view of a parallel resonator with a mass load of 100. 如图1A所示,谐振器100包括压电层110、下电极112、上电极114、质量负载116。 1A, the resonator 100 includes a piezoelectric layer 110, lower electrode 112, upper electrode 114, a mass load 116. 图1B为谐振器100的俯视图,其中示出了上电极114和质量负载116图案未对准的情况。 FIG 1B is a plan view of the resonator 100, which shows a case where the upper electrode 114 and the load 116 mass misaligned pattern. 参照图1A和图1B可以看出,质量负载116位于Ml区域的部分116b没有覆盖上电极114,而上电极114位于NI区域的部分114b之下没有质量负载116。 1A and FIG. 1B it can be seen that mass 116 is located portion 116b Ml load area not covered with the upper electrode 114, and the upper electrode 114 located below the portion 114b NI 116 mass load region is not. 如此加工形成的具有质量负载的并联谐振器性能将比上电极114和质量负载层116图案对准的并联谐振器性能差,进而导致由串联谐振器和并联谐振器组成的滤波器性能受损。 Thus processed to form a parallel resonator having a quality performance than the load on the load mass difference between the electrode 114 and the pattern alignment layer 116 parallel resonance performance, leading to damage to the series resonator and the parallel resonator composed of filter performance.

[0005] 对于谐振器,Q值(品质因数)是BAW谐振器非常重要的性能指标,提高BAW谐振器Q值的一种方法为在谐振器上电极之下沉积周边质量负载。 [0005] For the resonator, the Q value (quality factor) is a very important performance BAW resonators, BAW resonators A method for improving the Q value is outside the mass load is deposited on the resonator under the electrode. 当周边质量负载的图案外边缘与上电极的图案外边缘重合时,Q值能够得到最大化的提升。 When the outer periphery of the pattern outer edges of the mass load pattern coincides with the edge of the upper electrode, Q value can be obtained to maximize the lift. 如果周边质量负载与上电极的图案不是同时生成的,可能造成两层图案未对准,导致谐振器Q值无法大幅提升,甚至造成谐振器Q值的下降。 If the pattern surrounding the mass load and the upper electrode are not simultaneously generated, the two layers may cause misalignment of the pattern, resulting in the Q value of the resonator can not be significantly improved, even resulting in a decline of the Q value of the resonator.

[0006] 图2A所示为带有周边质量负载的谐振器200的截面图。 [0006] Figure 2A is a sectional view of a resonator 200 of the peripheral mass load. 如图2A所示,谐振器包括压电层210、下电极212、上电极214、周边质量负载218(质量负载218呈方框形,图2B中以虚线示出了周边质量负载218被上电极214覆盖的部分)。 2A, the resonator includes a piezoelectric layer 210, lower electrode 212, upper electrode 214, the peripheral mass load 218 (load 218 form a block-shaped mass, shown in phantom in FIG. 2B a peripheral mass 218 is supported on an electrode the cover portion 214). 图2B为谐振器200的俯视图。 2B is a top view of the resonator 200 of FIG. 参照图2A和图2B可以看出,上电极214和周边质量负载218由于未对准,导致在M2区域中上电极214的一部分214b并未完全覆盖周边质量负载的一边218a,而在N2区域中的上电极214的一部分214d超过周边质量负载的一边218b与压电层210接触。 2A and FIG. 2B it can be seen, the upper electrode 214 and a peripheral mass 218 loads due to misalignment, resulting in a portion 214b of the electrode 214 does not completely cover the peripheral side 218a of the load mass M2 in the region, the region in N2 214 mass part 214d beyond the perimeter of the load side 218b contact with the upper electrode 210 with the piezoelectric layer. 如此加工的带有周边质量负载的谐振器性能比上电极和周边质量负载图案对准的带有周边质量负载的谐振器性能差,Q值无法得到最大化的提升。 Thus processing performance resonator with the surrounding mass load than the upper electrode and the peripheral mass of the load pattern alignment with the periphery of the resonator mass load performance difference, Q value can not be maximized lift.

[0007] 另外,除了质量负载与上电极层未对准会对谐振器和滤波器带来不良影响之外,谐振器中其他可能存在的多个层如果不能够对准,同样会影响谐振器以及滤波器的性能。 [0007] In addition to the mass loading layer, upper electrode misalignment resonators and filters would adversely affect the outside, a plurality of other layers in the resonator may not be present if the alignment also affects the resonator and filter performance.

[0008] 针对相关技术中的上述问题,目前尚未提出有效的解决方案。 [0008] In response to these problems in the related art, it has not yet come up with effective solutions.

发明内容 SUMMARY

[0009] 针对相关技术中因为谐振器中需要对准的多个层无法对准而影响谐振器和滤波器性能的问题,本发明提出一种谐振器及其制造方法,能够使得谐振器中多个层的图形自对准,避免多个层的图形未对准导致谐振器性能受损的问题。 [0009] For related art problems because a plurality of resonators layers need to be aligned in the alignment can not affect the performance of the resonators and filters, to provide a resonator and a manufacturing method of the present invention, such a multi-resonator a self-alignment layer pattern, a plurality of pattern layers to avoid misalignment problems cause impaired performance of the resonator.

[0010] 本发明的技术方案是这样实现的: [0010] aspect of the present invention is implemented as follows:

[0011] 根据本发明的一个方面,提供了一种谐振器的制造方法,该方法包括: [0011] In accordance with one aspect of the invention, there is provided a method of manufacturing a resonator, the method comprising:

[0012] 在压电层上方形成对准结构,其中,对准结构包括需要进行对准的多个层、以及用于将多个层进行对准的对准层; [0012] The alignment structure is formed over the piezoelectric layer, wherein the alignment structure comprises a plurality of layers need to be aligned, and a plurality of layers aligned alignment layer;

[0013] 利用对准层将多个层中部分或全部层的边缘部分去除,使经去除后多个层的边缘彼此对准。 [0013] The alignment layer using a plurality of layers in some or all layers of the edge portion is removed, the edges of the layer was removed by a plurality of aligned with each other.

[0014] 其中,对准层为掩模层,对准层形成于需要对准的多个层上。 [0014] wherein the alignment layer is a mask layer, the alignment layer is formed on a plurality of layers need to be aligned.

[0015] 并且,利用对准层将多个层中部分或全部层的边缘部分去除包括:对多个层进行蚀刻,将掩模层未覆盖的多个层中部分或全部层的边缘部分去除,其中,在进行蚀刻之前,多个层中的至少部分层延伸至掩模层之外。 [0015] Then, the alignment layer using a plurality of layers or all layers partially removed edge portion comprising: a plurality of layers is etched, the mask layer not covered by the plurality of layers in part or all of the edge layer is partially removed wherein, prior to etching the plurality of layers at least partially extend outside the mask layer layer.

[0016] 此外,对于延伸至掩模层之外的多个层,通过一个或多个蚀刻步骤将该多个层延伸至掩模层之外的部分去除。 [0016] Further, a plurality of layers extend beyond the mask layer, partially removing the plurality of layers extend beyond the mask layer by one or more etching steps.

[0017] 其中,对准结构中需要对准的多个层包括上电极、以及质量负载/周边质量负载,质量负载/周边质量负载整体或部分位于上电极上方或下方。 [0017] wherein the plurality of layers need to be aligned in the alignment structure includes an upper electrode, and a mass load / peripheral mass loading, the mass load / load mass surrounding wholly or partially located above or below the upper electrode.

[0018] 此外,该方法可进一步包括:预先在并排设置的第一下电极和第二下电极上方形成压电层; [0018] In addition, the method may further comprise: a pre-forming a piezoelectric layer over the first lower electrode arranged side by side and a second lower electrode;

[0019] 并且,在压电层上方形成对准结构包括: [0019] Further, in the alignment structure is formed over the piezoelectric layer comprises:

[0020] 在压电层上方对应第二下电极的位置处形成质量负载/周边质量负载和上电极层,上电极层位于质量负载/周边质量负载的上方或下方; [0020] The formed mass load / peripheral mass and the upper electrode layer corresponding to the load at a position above the lower electrode of the second piezoelectric layer, the upper electrode layer load mass / mass above or below the periphery of the load;

[0021] 在上电极层和质量负载/周边质量负载上方对应于第一下电极和第二下电极的位置处分别形成掩模层; [0021] on the electrode layer, and a mass load / over the periphery of the mass load at a position corresponding to the first lower electrode and the second lower electrode respectively forming a mask layer;

[0022] 并且,利用掩模层将多个层中部分或全部层的边缘部分去除包括: [0022] Then, using the mask layer edge portions of the plurality of layers in some or all layers removal comprising:

[0023] 将上电极层和质量负载/周边质量负载未被掩模层覆盖的部分蚀刻去除。 [0023] The upper electrode layer and a mass load / load mass partially etched perimeter not covered by the mask layer is removed.

[0024] 其中,质量负载/周边质量负载的形状包括:多边形、圆形、椭圆形。 [0024] wherein a mass load / peripheral shape of the mass load comprising: polygon, circle, ellipse. [0025] 此外,该方法可进一步包括: [0025] In addition, the method may further comprise:

[0026] 在将多个层中的部分层未被掩模层覆盖的部分去除之后,将掩模层去除;或者在多个层中所有未被掩模层覆盖的部分被去除之后,将掩模层去除。 [0026] After the mask layer portion layer is not covered by the plurality of layers is removed, the mask layer is removed; or after the portion of the plurality of layers are not all covered by the mask layer is removed, the mask removing the mold layer.

[0027] 其中,对准结构中需要对准的多个层包括上电极层和钝化层,钝化层整体或部分位于上电极层的上方。 [0027] wherein the plurality of layers need to be aligned in the alignment structure includes an upper electrode layer and the passivation layer, the passivation layer is wholly or partially located above the upper electrode layer.

[0028] 并且,掩模层为光刻胶层。 [0028] Then, the mask layer is a photoresist layer.

[0029] 可选地,需要对准的多个层的至少一部分延伸至对准层之外的距离为0.1 μ m至10000 μ m。 Distance of at least a portion of the [0029] Alternatively, a plurality of aligned layers extend beyond needs alignment layer is 0.1 μ m to 10000 μ m. 优选地,需要对准的多个层的至少一部分延伸至对准层之外的距离为Iym至100 μ m0 Preferably at least part of the distance, the plurality of layers extend beyond the required alignment of the alignment layer to 100 μ m0 Iym

[0030] 此外,对准层还可以为牺牲层,并且形成于需要对准的多个层需要去除的部分下方。 [0030] In addition, the alignment layer may also be a sacrificial layer, and a lower portion of a plurality of aligned layers need to be removed.

[0031] 其中,利用对准层将多个层中部分或全部层的边缘部分去除包括:通过将对准结构中的牺牲层去除,将需要对准的多个层位于牺牲层上方的部分去除,其中,在进行去除之前,多个层中的至少一部分延伸至牺牲层上方。 [0031] wherein the alignment layer using a plurality of layers or all layers partially removed edge portion comprising: removing the sacrificial layer, the alignment structure, a plurality of layers need to be aligned is positioned above the removed portion of the sacrificial layer, wherein, prior to carrying out the removal, at least a portion of the plurality of layers extend to the top of the sacrificial layer.

[0032] 根据本发明的另一方面,提供了一种谐振器的制造方法。 [0032] According to another aspect of the present invention, there is provided a method of manufacturing a resonator. 该方法包括: The method comprising:

[0033] 形成对准结构,其中,对准结构包括需要进行对准的多个层、以及用于将多个层进行对准的对准层; [0033] The alignment structure is formed, wherein the alignment structure comprises a plurality of layers need to be aligned, and a plurality of layers aligned alignment layer;

[0034] 利用对准层将多个层中部分或全部层的边缘部分去除,使经去除后多个层的边缘彼此对准; [0034] The alignment layer using a plurality of layers in some or all layers of the edge portion is removed, the edges of a plurality of layers aligned with each other after removal;

[0035] 在边缘彼此对准的多个层上方形成压电层。 [0035] The piezoelectric layer is formed over the edges of a plurality of layers are aligned with each other.

[0036] 其中,对准层为掩模层,并且,对准层形成于需要对准的多个层上。 [0036] wherein the alignment layer as a mask layer, and a plurality of the alignment layer is formed on the layer needs to be aligned.

[0037] 并且,利用对准层将多个层中部分或全部层的边缘部分去除包括:对多个层进行蚀刻,将掩模层未覆盖的多个层中部分或全部层的边缘部分去除,其中,在进行蚀刻之前,多个层中的至少部分层延伸至掩模层之外。 [0037] Then, the alignment layer using a plurality of layers or all layers partially removed edge portion comprising: a plurality of layers is etched, the mask layer not covered by the plurality of layers in part or all of the edge layer is partially removed wherein, prior to etching the plurality of layers at least partially extend outside the mask layer layer.

[0038] 并且,在进行蚀刻时,对于延伸至掩模层之外的多个层,通过一个或多个蚀刻步骤将该多个层延伸至掩模层之外的部分去除。 [0038] Further, during etching, a plurality of layers extend beyond the mask layer, partially removing the plurality of layers extend beyond the mask layer by one or more etching steps.

[0039] 此外,对准结构中需要对准的多个层包括下电极、以及质量负载/周边质量负载,质量负载/周边质量负载整体或部分位于下电极上方或下方。 [0039] Further, a plurality of layers need to be aligned in the alignment structure includes a lower electrode, and a mass load / peripheral mass loading, the mass load / load mass surrounding wholly or partially located above or below the lower electrode.

[0040] 其中,形成对准结构包括:形成质量负载/周边质量负载和下电极层,下电极层位于质量负载/周边质量负载的上方或下方;在下电极层和质量负载/周边质量负载上方形成掩模层; [0040] wherein the alignment structure is formed comprising: forming a mass load / peripheral mass load and the lower electrode layer, an electrode layer positioned under load mass / mass above or below the periphery of the load; formed on the lower electrode layer and a mass load / load above the surrounding mass the mask layer;

[0041] 并且,利用掩模层将多个层中部分或全部层的边缘部分去除包括: [0041] Then, using the mask layer edge portions of the plurality of layers in some or all layers removal comprising:

[0042] 将下电极层和质量负载/周边质量负载未被掩模层覆盖的部分蚀刻去除。 [0042] The lower electrode layer and a mass load / load mass partially etched perimeter not covered by the mask layer is removed.

[0043] 其中,质量负载/周边质量负载的形状包括:多边形、圆形、椭圆形。 [0043] wherein a mass load / peripheral shape of the mass load comprising: polygon, circle, ellipse.

[0044] 可选地,需要对准的多个层的至少一部分延伸至对准层之外的距离为0.1 μ m至10000 μ m。 Distance of at least a portion of the [0044] Alternatively, a plurality of aligned layers extend beyond needs alignment layer is 0.1 μ m to 10000 μ m. 优选地,需要对准的多个层的至少一部分延伸至对准层之外的距离为Iym至100 μ m0 Preferably at least part of the distance, the plurality of layers extend beyond the required alignment of the alignment layer to 100 μ m0 Iym

[0045] 根据本发明的另一方面,提供了一种谐振器。 [0045] According to another aspect of the present invention, there is provided a resonator. 该谐振器包括: The resonator comprises:

[0046] 压电层;[0047] 对准结构,形成于压电层的至少一侧,其中,对准结构包括多个层,多个层的边缘彼此对准; [0046] The piezoelectric layer; [0047] alignment structure formed on at least one side of the piezoelectric layer, wherein the alignment structure comprises a plurality of layers, the edges of a plurality of layers aligned with each other;

[0048] 其中,多个层包括以下至少之一:上电极和质量负载/周边质量负载;下电极和质量负载/周边质量负载;上电极和钝化层; [0048] wherein at least one of a plurality of layers comprising: an upper electrode and a mass load / peripheral mass loading; lower electrode and a mass load / peripheral mass loading; upper electrode and a passivation layer;

[0049] 并且,质量负载/周边质量负载整体或部分位于上电极/下电极远离或靠近压电层的一侧,钝化层整体或部分位于上电极远离压电层的一侧。 [0049] Further, the mass load / load mass surrounding whole or in part one side of the upper electrode / lower electrode away from or close to the piezoelectric layer, a passivation layer located wholly or partially the upper electrode remote from the side of the piezoelectric layer.

[0050] 本发明通过设置对准层,能够将谐振器中多个未对准的层的多余部分去除,从而使得多个层的图形能够自对准,避免了多个层的图形未对准导致的谐振器(以及由谐振器构成的滤波器等器件)性能受损的问题,能够有效提高器件的性能。 [0050] By providing the alignment layer of the present invention, the resonator can be in the excess portion of the plurality of non-aligned layer is removed, so that the pattern can be a plurality of layers of self-alignment, a plurality of pattern layers to avoid misalignment resulting resonator (filters and resonator device constituted by) impaired performance issues, effectively improves the performance of the device.

附图说明 BRIEF DESCRIPTION

[0051] 为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。 [0051] In order to more clearly illustrate the technical solutions in the embodiments or the prior art embodiment of the present invention, the drawings are briefly introduced as required for use in the embodiments describing the embodiments. Apparently, the accompanying drawings described below are merely Some embodiments of the invention, those of ordinary skill in the art is concerned, without creative efforts, can derive from these drawings other drawings.

[0052] 图1A、图1B、图2A和图2B示出了现有技术中谐振器中未对准的多个层的结构示意图; [0052] FIGS. 1A, 1B, 2A and 2B show a schematic structure of a plurality of layers of the prior art resonator misalignment;

[0053] 图3A-3H示出了根据本发明一个实施例的谐振器的方法中处于各个制造阶段的谐振器; [0053] FIGS. 3A-3H illustrate various stages of manufacture of the resonator method according to one embodiment of the resonator of the present invention in the embodiment;

[0054] 图31-3K是图3A-3H所示的部分制造步骤的制造结果的俯视图; [0054] FIG 31-3K is a top view of the partially fabricated result of the manufacturing steps shown in 3A-3H;

[0055] 图4A-4H示出了根据本发明另一个实施例的谐振器的方法中处于各个制造阶段的谐振器; [0055] FIGS. 4A-4H illustrate various stages of manufacture of the resonator in the method according to another embodiment of the resonator of the embodiment of the present invention;

[0056] 图41-4K是4A-4H所示的部分制造步骤的制造结果的俯视图; [0056] FIG 41-4K is a plan view of the partially fabricated result of the manufacturing steps shown in 4A-4H;

[0057] 图5是对应于图3所示各个制造阶段的工艺流程图; [0057] FIG. 5 is a process flow diagram corresponding to FIG various stages of fabrication shown in Figure 3;

[0058] 图6是对应于图4所示各个制造阶段的工艺流程图; [0058] FIG. 6 is a flow chart corresponding to Fig various stages of fabrication shown in FIG 4;

[0059] 图7A-7H是根据本发明再一实施例的谐振器的制造方法中处于各个制造阶段的谐振器 [0059] FIGS. 7A-7H are in various stages of manufacture of the resonator manufacturing method according to another embodiment of the resonator of the embodiment of the present invention,

[0060] 图8A-8H是根据本发明另一实施例的谐振器的制造方法中处于各个制造阶段的谐振器; [0060] FIGS. 8A-8H are in various stages of manufacture of the resonator The method of manufacturing a resonator according to another embodiment of the present invention;

[0061] 图9A-9H是根据本发明另一实施例的谐振器的制造方法中处于各个制造阶段的谐振器; [0061] FIGS. 9A-9H are in various stages of manufacture of the resonator The method of manufacturing a resonator according to another embodiment of the present invention;

[0062] 图10是根据本发明实施例的谐振器的制造方法的流程图; [0062] FIG. 10 is a flowchart of a method for manufacturing the resonator of the embodiments of the present invention;

[0063] 图11是根据本发明实施例的另一谐振器的制造方法的流程图。 [0063] FIG. 11 is a flowchart of a method for producing another embodiment of the resonator of the present invention.

具体实施方式 detailed description

[0064] 下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。 [0064] below in conjunction with the present invention in the accompanying drawings, technical solutions of embodiments of the present invention are clearly and completely described, obviously, the described embodiments are merely part of embodiments of the present invention, but not all embodiments example. 基于本发明中的实施例,本领域普通技术人员所获得的所有其他实施例,都属于本发明保护的范围。 Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art fall within the scope of protection of the present invention. [0065] 根据本发明的实施例,提供了一种谐振器的制造方法。 [0065] According to an embodiment of the present invention, there is provided a method of manufacturing a resonator.

[0066] 如图10所示,根据本发明实施例的谐振器的制造方法包括: [0066] 10, the method of manufacturing a resonator according to an embodiment of the present invention comprises:

[0067] 步骤S1001,在压电层上方形成对准结构,其中,对准结构包括需要进行对准的多个层、以及用于将多个层进行对准的对准层; [0067] step S1001, the alignment structure is formed over the piezoelectric layer, wherein the alignment structure comprises a plurality of layers need to be aligned, and a plurality of layers aligned alignment layer;

[0068] 步骤S1003,利用对准层将多个层中部分或全部层的边缘部分去除,使经去除后多个层的边缘彼此对准。 [0068] step S1003, the alignment layer using a plurality of layers in some or all layers of the edge portion is removed, the edges of a plurality of layers aligned with each other after the removal.

[0069] 在本发明的一个实施例中,对准层可以为掩模层,并且对准层形成于需要对准的多个层上方。 [0069] In one embodiment of the present invention, the alignment layer may be used as a mask layer, and an alignment layer formed over the plurality of layers need to be aligned. 掩模层可以保护其下方的层不被去除。 Mask layer may protect the underlying layer is not removed.

[0070] 本发明可以采用的去除工艺包括但不限于蚀刻、机械去除等。 [0070] The removal process of the present invention may be employed include, but are not limited to etching, mechanical removal, etc. 其中,蚀刻工艺可以采用干蚀刻、湿蚀刻、气体蚀刻等多种蚀刻工艺。 Wherein the etching process may be dry etching, wet etching, gas etching using other etching processes.

[0071] 以进行蚀刻工艺进行对准为例,在利用对准层将多个层中部分或全部层的边缘部分去除时,可以对上述对准结构进行蚀刻,将掩模层未覆盖的多个层中部分或全部层的边缘部分去除,其中,在进行蚀刻之前,多个层中的至少部分层延伸至掩模层之外。 [0071] In an example alignment etching process, when a plurality of layers or portions of the edge portions of all the layers is removed using the alignment layer, the alignment can be etched structure, the mask layer not covered by the multi some or all layers of the edge layer is partially removed, wherein, prior to etching the plurality of layers at least partially extend outside the mask layer layer.

[0072] 在进行蚀刻时,对于延伸至掩模层之外的多个层,可通过一个步骤将该多个层延伸至掩模层之外的部分去除。 [0072] During etching, a plurality of layers extend beyond the mask layer, a step by the plurality of layers extend to the outside portion of the mask layer is removed. 在另一实施例中,可以通过多个蚀刻步骤将该多个层延伸至掩模层之外的部分去除。 In another embodiment, this portion can be removed more layers extend beyond the mask layer by a plurality of etching steps. 在通过多个蚀刻步骤对多个层进行去除工艺时,可以在这多个步骤之间将掩模层去除,而将已经完成蚀刻的任一层作为将要执行的后续蚀刻步骤的掩模层,将该层下方的部分或全部层未被该层覆盖的部分去除。 When the removal process performed on the plurality of layers by a plurality of etching steps, the mask layer may be removed between the plurality of steps has been completed while any of the etching mask layer as one of the subsequent etching step to be performed, the portion below the layer or all layers of the cover layer portion is not removed.

[0073] 在一个实施例中,对准结构中需要对准的多个层包括上电极和质量负载/周边质量负载,质量负载/周边质量负载整体或部分位于上电极上方或下方。 [0073] In one embodiment, a plurality of layers need to be aligned in the alignment structure includes an upper electrode and a mass load / peripheral mass loading, the mass load / load mass surrounding wholly or partially located above or below the upper electrode.

[0074] 并且,该制造方法进一步包括:预先在并排设置的第一下电极和第二下电极上方形成压电层;并且,在压电层上方形成对准结构包括:在压电层上方对应第二下电极的位置处形成质量负载/周边质量负载和上电极层,其中,上电极层位于质量负载/周边质量负载的上方或下方;在上电极层和质量负载/周边质量负载上方对应于第一下电极和第二下电极的位置处分别形成掩模层;并且,利用掩模层将多个层中部分或全部层的边缘部分去除时,可以将上电极层和质量负载/周边质量负载未被掩模层覆盖的部分蚀刻去除。 [0074] Further, the manufacturing method further comprising: pre-forming the piezoelectric layer over a first electrode arranged side by side and a second lower electrode; and, the piezoelectric layer is formed over the alignment structure comprising: a piezoelectric layer corresponding to the above a second electrode at a position lower forming load mass / mass loading of the surrounding layer and an upper electrode, wherein the electrode layer is located on the load mass / mass above or below the periphery of the load; and on the electrode layer corresponding to a mass load / peripheral mass supported above at a position of the first lower electrode and the second lower electrode forming a mask layer, respectively; and, when a plurality of layers or portions of the edge portions of all the layers is removed using the mask layer, the upper electrode layer and a mass load / peripheral mass the load is not covered by the mask layer partially removed by etching.

[0075] 并且,该方法可进一步包括:在将多个层中的部分层未被掩模层覆盖的部分去除之后,将掩模层去除;或者在多个层中所有未被掩模层覆盖的部分被去除之后,将掩模层去除。 [0075] Further, the method may further comprise: after the layer portion of the mask layer not covered by the plurality of layers is removed, the mask layer is removed; all or not in the mask layer covering the plurality of layers after the part is removed, the mask layer is removed. 其中,质量负载和周边质量负载的形状可以是多种形状,例如,其形状可以包括:多边形、圆形、椭圆形。 Wherein the peripheral mass load and a mass load shape may be of various shapes, e.g., the shape thereof may include: polygon, circle, ellipse. 并且,质量负载和周边质量负载的区别在于周边质量负载的中间部分是空的(例如,呈框形或环形)。 Further, the mass load and a mass load of the peripheral intermediate portion of the peripheral mass difference is that the load is empty (e.g., a frame-shaped or annular).

[0076] 对于将质量负载与上电极对齐的具体过程,将在后面结合图3进行详细描述,而对于将周边质量负载与上电极对齐的具体过程,将在后面结合图4进行详细描述。 [0076] For the particular process to the mass load of the upper electrode is aligned, in conjunction with FIG. 3 will be described in detail later, but for the specific process outside the mass load of the upper electrode is aligned, will be described in detail later in conjunction with FIG.

[0077] 另外,在上述方法中,在需要对准的多个层包括质量负载和上方的上电极层的情况下,一方面,可以在上电极层上形成掩模层,在将掩模层以外的上电极层和质量负载均去除之后,再将掩模层去除;另一方面,也可以先将掩模层以外的上电极层去除,之后将掩模层去除,将去除后的上电极层作为对质量负载进行去除的掩模层,通过这种方式,同样能够将上电极层和质量负载对齐。 [0077] Further, in the above method, in the case where a plurality of quality layers comprises a load needs to be aligned and an upper electrode layer over the one hand, the mask layer may be formed on the upper electrode layer, the mask layer upper electrode other hand, the upper electrode layer other than the first mask layer may be removed, after which the mask layer is removed, and after removal; after the upper electrode layer are removed and a mass load other than the mask layer is then removed layer as a mass load of the mask layer is removed, in this way, can be aligned on the same electrode layer and a mass load.

[0078] 在另一实施例中,对准结构中需要对准的多个层包括上电极层和钝化层,钝化层整体或部分位于上电极层的上方。 [0078] In another embodiment, a plurality of layers need to be aligned in the alignment structure includes an upper electrode layer and the passivation layer, the passivation layer is wholly or partially located above the upper electrode layer. 对于钝化层和上电极层的对准方式同样可以参照之前对质量负载进行对准的方式,这里不再重复。 For aligning manner passivation layer and upper electrode layer may also be a mass load aligned manner prior reference, will not be repeated here.

[0079] 在一个实施例中,上述的掩模层可以为光刻胶层。 [0079] In one embodiment, the mask layer may be a photoresist layer. 在其他实施例中,上述掩模层可以是其他具有阻止蚀刻功能的蚀刻停止层。 In other embodiments, the mask layer may have other functions to prevent etch etch stop layer. 这样就能够通过提供保护的图形保护被保护的图形不被刻蚀,实现了不同层的图形的自对准,避免了由于光刻对准等问题带来的图形未对准导致的谐振器性能受损,提高了产品的良率。 This can not be etched by providing a graphical protection protected graphics protection, to achieve self-alignment of patterns in different layers, to avoid resonance performance since the photolithographic alignment problems caused by misalignment of the pattern caused by damage, improve product yield.

[0080] 另外,上述对准层不仅可以是掩模层,还可以为牺牲层,并且形成于需要对准的多个层需要去除的部分下方。 [0080] Further, the alignment layer may be not only the mask layer, the sacrificial layer may also be, and is formed on the lower portion of a plurality of aligned layers need to be removed. 此时,在利用对准层将多个层中部分或全部层的边缘部分去除时,可以通过将对准结构中的牺牲层去除,将需要对准的多个层位于牺牲层上方的部分去除,其中,在进行蚀刻之前,多个层中的至少部分层延伸至牺牲层上方。 At this time, when the plurality of layers in some or all of the edge layer is partially removed using the alignment layer, the alignment layer may be formed by the sacrificial structure is removed, it would require a plurality of aligned layers located above the sacrificial layer is partially removed wherein, prior to etching the plurality of layers to the at least partial layer extends over the sacrificial layer. 例如,可以采用liftoff工艺来实现这里所描述的步骤,从而实现部分层的剥离。 For example, a liftoff process may be used to implement the steps described herein in order to achieve the release layer portion.

[0081] 在采用牺牲层作为对准层的实施例中,同样可以用于实现多个层的对准,包括但不限于上电极层与质量负载的对准、上电极层与钝化层的对准等。 [0081] In embodiments employing a sacrificial layer as an alignment layer, the alignment can also be used to implement a plurality of layers, including but not limited to the electrode layer and the alignment of the load mass, the upper electrode layer and the passivation layer alignment, etc..

[0082] 可选地,在本发明的实施例中,需要对准的多个层的至少一部分延伸至对准层之外的距离为0.1 μ m至10000 μ m。 From [0082] Alternatively, in the embodiment of the present invention, at least a portion of the plurality of layers extend beyond needs to be aligned alignment layer is 0.1 μ m to 10000 μ m. 优选地,需要对准的多个层的至少一部分延伸至对准层之外的距离为I μ m至100 μ m。 Preferably at least part of the distance, the plurality of layers extend beyond needs to be aligned to the alignment layer I μ m to 100 μ m.

[0083] 根据本发明的实施例,还提供了一种谐振器的制造方法。 [0083] According to an embodiment of the present invention there is also provided a method of manufacturing a resonator.

[0084] 如图11所示,根据本发明实施例的谐振器的制造方法包括: [0084] 11, according to the manufacturing method of an embodiment of the resonator of the present invention comprises:

[0085] 步骤S1101,形成对准结构,其中,对准结构包括需要进行对准的多个层、以及用于将多个层进行对准的对准层; [0085] Step S1101, the alignment structure is formed, wherein the alignment structure comprises a plurality of layers need to be aligned, and a plurality of layers aligned alignment layer;

[0086] 步骤S1103,利用对准层将多个层中部分或全部层的边缘部分去除,使经去除后多个层的边缘彼此对准; [0086] step S1103, the alignment layer using a plurality of layers in some or all layers of the edge portion is removed, the edges of the layer was removed by a plurality of alignment with each other;

[0087] 步骤S1105,在边缘彼此对准的多个层上方形成压电层。 [0087] step S1105, the piezoelectric layer is formed in an edge aligned with one another over a plurality of layers.

[0088] 在本发明的一个实施例中,对准层可以为掩模层,并且对准层形成于需要对准的多个层上方。 [0088] In one embodiment of the present invention, the alignment layer may be used as a mask layer, and an alignment layer formed over the plurality of layers need to be aligned. 掩模层可以保护其下方的层不被去除。 Mask layer may protect the underlying layer is not removed.

[0089] 本发明可以采用的去除工艺包括但不限于蚀刻、机械去除等。 [0089] The removal process of the present invention may be employed include, but are not limited to etching, mechanical removal, etc. 其中,蚀刻工艺可以采用干蚀刻、湿蚀刻、气体蚀刻等多种蚀刻工艺。 Wherein the etching process may be dry etching, wet etching, gas etching using other etching processes. 以进行蚀刻工艺进行对准为例,在利用对准层将多个层中部分或全部层的边缘部分去除时,可以对上述多个层进行蚀刻,将掩模层未覆盖的多个层中部分或全部层的边缘部分去除,其中,在进行蚀刻之前,多个层中的至少部分层延伸至掩模层之外。 Aligned etching process for example, when a plurality of layers or all layers partially removed using the edge portion of the alignment layer, may be etched to the plurality of layers, a mask layer not covered by the plurality of layers an edge portion or all of the removed layer, wherein, prior to etching the plurality of layers at least partially extend outside the mask layer layer.

[0090] 在进行蚀刻时,对于延伸至掩模层之外的多个层,可通过一个蚀刻步骤将该多个层延伸至掩模层之外的部分去除。 [0090] During etching, a plurality of layers extend beyond the mask layer may be a plurality of layers extend to the outside portion of the mask layer is removed by an etching step. 在另一实施例中,可以通过多个蚀刻步骤将该多个层延伸至掩模层之外的部分去除。 In another embodiment, this portion can be removed more layers extend beyond the mask layer by a plurality of etching steps. 在通过多个蚀刻步骤对多个层进行去除工艺时,可以在这多个步骤之间将掩模层去除,而将已经完成蚀刻的任一层作为将要执行的后续蚀刻步骤的掩模层,将该层下方的部分或全部层未被该层覆盖的部分去除。 When the removal process performed on the plurality of layers by a plurality of etching steps, the mask layer may be removed between the plurality of steps has been completed while any of the etching mask layer as one of the subsequent etching step to be performed, the portion below the layer or all layers of the cover layer portion is not removed.

[0091] 在一个实施例中,对准结构中需要对准的多个层包括下电极、以及质量负载/周边质量负载,质量负载/周边质量负载整体或部分位于下电极上方或下方。 [0091] In one embodiment, a plurality of layers need to be aligned in the alignment structure includes a lower electrode, and a mass load / peripheral mass loading, the mass load / load mass surrounding wholly or partially located above or below the lower electrode.

[0092] 其中,形成对准结构包括:形成质量负载/周边质量负载和下电极层,下电极层位于质量负载/周边质量负载的上方或下方;并且,在下电极层和质量负载/周边质量负载上方形成掩模层;并且,利用掩模层将多个层中部分或全部层的边缘部分去除时,可以将下电极层和质量负载/周边质量负载未被掩模层覆盖的部分蚀刻去除。 [0092] wherein the alignment structure is formed comprising: forming a mass load / peripheral mass load and the lower electrode layer, an electrode layer positioned under load mass / mass above or below the periphery of the load; and, the lower electrode layer and a mass load / peripheral mass load forming a mask over the layer; and, when a plurality of layers in some or all layers of the edge portion is removed using the mask layer, the lower electrode layer and a mass load / peripheral mass loading portion not covered by the mask layer is removed by etching.

[0093] 其中,质量负载/周边质量负载的形状包括:多边形、圆形、椭圆形。 [0093] wherein a mass load / peripheral shape of the mass load comprising: polygon, circle, ellipse. 并且,质量负载和周边质量负载的区别在于周边质量负载的中间部分是空的。 Further, the mass load and a mass load of the peripheral intermediate portion of the peripheral mass difference is that the load is empty.

[0094] 例如,在需要对准的多个层包括质量负载和上方的下电极层的情况下,一方面,可以在下电极层上形成掩模层,在将掩模层以外的下电极层和质量负载均去除之后,再将掩模层去除;另一方面,也可以先将掩模层以外的下电极层去除,之后将掩模层去除,将去除后的下电极层作为对质量负载进行去除的掩模层,通过这种方式,同样能够将下电极层和质量负载对齐。 [0094] For example, in the case where a plurality of layers need to be aligned comprises a lower electrode layer above the mass load and, on the one hand, the mask layer may be formed on the lower electrode layer, the lower electrode layer and the outside of the mask layer after the mass load are removed, and then removing the mask layer; on the other hand, can be removed under the first electrode layer other than the mask layer, the mask layer is removed after the lower electrode layer was removed as a mass load removing the mask layer, in this way, the lower electrode layer can likewise be supported and the quality of alignment. 可选地,在本发明的实施例中,需要对准的多个层的至少一部分延伸至对准层之外的距离为0.1 μ m至10000 μ m。 Distance of at least a portion of the plurality of layers, optionally, in the embodiment of the present invention, it is required to extend beyond the alignment of the alignment layer is 0.1 μ m to 10000 μ m. 优选地,需要对准的多个层的至少一部分延伸至对准层之外的距离为I μ m至100 μ m。 Preferably at least part of the distance, the plurality of layers extend beyond needs to be aligned to the alignment layer I μ m to 100 μ m.

[0095] 与上电极进行对准的情况类似,掩模层可以是光刻胶层,也可以是其他具有保护下方结构不被去除的功能的层。 [0095] the like alignment of the upper electrode, the mask layer may be a photoresist layer, it may be another layer having a function of protecting the underlying structure is not removed. 另外,对于需要对准的多个层包括下电极的情况,根据本实施例的制造方法同样可以进一步包括: Further, the case needs to be aligned for the plurality of layers comprising a lower electrode, the manufacturing method according to the present embodiment may also further comprise:

[0096] 在将多个层中的部分层未被掩模层覆盖的部分去除之后,将掩模层去除;或者 [0096] After the mask layer portion layer is not covered by the plurality of layers is removed, the mask layer is removed; or

[0097] 在多个层中所有未被掩模层覆盖的部分被去除之后,将掩模层去除。 [0097] After all of the plurality of layers is not covered by the mask layer portion is removed, the mask layer is removed.

[0098] 与上电极对准的情况类似,对于需要对准的多个层包括下电极的情况,在利用对准层将多个层中部分或全部层的边缘部分去除时,可以通过将对准结构中的牺牲层去除,将需要对准的多个层位于牺牲层上方的部分去除,其中,在进行去除之前,多个层中的至少一部分延伸至牺牲层上方。 [0098] in the case of the upper electrode aligned Similarly, a plurality of layers need to be aligned for the case where the lower electrode comprises, when a plurality of layers or all layers partially removed using the edge portion of the alignment layer, will be by the sacrificial layer is removed in the registration structure, a plurality of layers need to be aligned is positioned above the removed portion of the sacrificial layer, wherein, prior to carrying out the removal, at least a portion of the plurality of layers extend to the top of the sacrificial layer.

[0099] 并且,本发明实施例提供的上述谐振器的制造方法可以应用于并联谐振器、串联谐振器以及其他具有多个需要对准的层的谐振器。 [0099] Further, the method for producing the above-described embodiment of the resonator of the present invention is provided may be applied to the parallel resonators, series resonators, and other resonators need to be aligned with a plurality of layers.

[0100] 下面将结合具体实例对本发明的制造方法进行详细描述。 [0100] The following specific examples in conjunction with the manufacturing method of the present invention will be described in detail.

[0101] 图3A-3H示出了根据本发明一个实施例的串联谐振器和带有质量负载的并联谐振器的在各个工艺阶段的结构图,而图31-3K是其中关键步骤所形成结构的俯视图。 [0101] FIGS. 3A-3H illustrate one embodiment in accordance with the series resonator of the embodiment of the present invention and having a configuration diagram of the parallel resonator mass loading at various stages of the process, and is a key step in the FIG 31-3K structures formed top view. 为了明确和简化描述,图3中并未示出谐振器的基底和声反射结构,但并不代表谐振器不需要基底或者声反射结构。 In order to clarify and simplify the description, not shown in FIG. 3 substrate acoustic resonator reflecting structure, but does not represent acoustic resonator does not require a substrate or a reflective structure. 同样,在图31-3K中,为了明确和简化描述,同样省略了不相关的结构 Similarly, in FIG 31-3K, in order to clarify and simplify the description, the same structure is omitted unrelated

[0102] 图5示出了与图3中所示各个阶段对应的工艺流程。 [0102] FIG. 5 shows the stage corresponding to each of the process shown in FIG.

[0103] 首先,如图5的步骤S501,在基底上形成串联谐振器和并联谐振器的下电极311和312,加工结构如图3A所示。 [0103] First, in step S501 in FIG. 5, a lower electrode 311 and the series resonator and a parallel resonator on the substrate 312, the processing structure shown in Figure 3A. 串联谐振器和并联谐振器的下电极可以同时形成,也可以在不同的步骤中分别形成。 The lower electrode series resonator and the parallel resonator may be formed at the same time, may be separately formed in different steps. 下电极311和312可以由金(Au)、钨(W)、钥(Mo)、钼(Pt)、钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等多种金属或其合金形成,并且可用于形成下电极的材料并不局限于以上材料。 Lower electrodes 311 and 312 may be formed of gold (Au), tungsten (W), the key (Mo), molybdenum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium ( ti) or alloys thereof and other metals, and may be a material for the lower electrode is formed is not limited to the above materials. 并且,下电极311和312可以由同种材料构成,也可以由不同材料构成。 Further, the lower electrodes 311 and 312 may be made of the same material, they may be formed of different materials.

[0104] 然后,参照图5的步骤S502,在下电极311和312上形成串联谐振器和并联谐振器的压电层310,加工结构如图3B所示。 [0104] Then, with reference to step S502 of FIG. 5, the lower electrode 311 and the piezoelectric layer 310 to form a series resonator and a parallel resonator 312, the processing structure shown in Figure 3B. 串联谐振器和并联谐振器的压电层可以相互连接(共用压电层),也可以通过刻蚀等方法使串联谐振器和并联谐振器的压电层相互断开。 Series resonator and the parallel resonator can be connected to each piezoelectric layer (piezoelectric layer common), the piezoelectric layer may be series resonator and the parallel resonator disconnected from each other by etching or the like. 串联谐振器和并联谐振器的压电层可以通过一次沉积的方法同时形成,也可以在不同的步骤中分别形成。 Series resonator and the parallel resonator of the piezoelectric layer can be formed simultaneously by a deposition method, may be separately formed in different steps. 压电层310可以由以下材料构成:氮化铝(A1N)、氧化锌(ZnO)、锆钛酸铅(PZT)、银酸锂(LiNb03)、石英(quartz)、银酸钾(KNb03)或钽酸锂(LiTa03)等材料,但不局限于以上材料。 The piezoelectric layer 310 may be made of the following materials: aluminum nitride (A1N), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium silver (LiNb03), quartz (quartz), potassium silver (KNb03) or lithium tantalate (LiTa03) materials such as, but not limited to the above materials.

[0105] 然后,如图5的步骤S503,在并联谐振器的压电层上形成伪质量负载318,加工结构如图3C所示,其俯视图如图31所示。 [0105] Then, as shown in step S503. 5, formed on the piezoelectric layer as shown in the pseudo-parallel resonator mass load 318, the processing structure shown in Figure 3C, a top view in FIG. 31. 伪质量负载318的图案大于质量负载的图案,通过之后将要描述的去除工艺,伪质量负载318的部分图案将被去除,从而形成加工后的质量负载的图案。 Dummy pattern 318 mass load greater than the mass load pattern removal process will be described by the following pseudo mass loading pattern portion 318 is removed, thereby forming a processed mass load pattern.

[0106] 然后,如图5的步骤S504,沉积上电极层319,加工结构如图3D所示。 [0106] Then, in step S504 in FIG. 5, the deposition of the electrode layer 319, the processing structure shown in Figure 3D. 上电极层319由如下金属构成:金(Au)、钨(W)、钥(Mo)、钼(Pt)、钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属或其合金,但并不局限于以上材料。 An electrode layer 319 formed of the following metals: gold (Au), tungsten (W), the key (Mo), molybdenum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium (Ti) and the like or an alloy thereof, but is not limited to the above materials.

[0107] 然后,如图5的步骤S505,执行光刻工艺,加工的结构如图3E所示。 [0107] Then, as shown in the step S505 5, performing a photolithography process, the processing of the structure shown in Figure 3E. 在串联谐振器和并联谐振器上形成的光刻胶分别为321和322。 The photoresist formed on the series resonators and the parallel resonators 321 and 322, respectively. 光刻胶321和322的图案分别为串联谐振器和并联谐振器的上电极的图案。 The photoresist patterns 321 and 322 are upper electrodes of the series resonator and the parallel resonator pattern.

[0108] 然后,如图5的步骤S506,刻蚀形成串联谐振器和并联谐振器的上电极313和314,加工结构如图3F所示,其俯视图如图3J所示。 [0108] Then, in step S506 in FIG. 5, upper electrode 313 is etched to form a series resonator and a parallel resonator 314 and a processing configuration shown in Figure 3F, a top view in FIG. 3J. 并联谐振器的上电极314没有完全覆盖并联谐振器的伪质量负载318。 The upper electrode 314 parallel resonator mass does not completely cover the dummy load parallel resonator 318.

[0109] 然后,如图5的步骤S507,刻蚀形成并联谐振器的质量负载316,加工结构如图3G所示,其俯视图如图3K所示。 [0109] Then, the step of FIG. 5 S507, FIG etching to form parallel resonator mass load 316, the processing structure shown in Figure 3G, a top view in FIG. 3K. 在刻蚀形成并联谐振器的质量负载316的过程中,并联谐振器上的光刻胶322和并联谐振器的上电极314作为阻挡,保护其下的伪质量负载不被刻蚀,形成质量负载316。 In the process of etching to form parallel resonator mass load 316, the photoresist 322 and the upper electrode of the parallel resonator on a parallel resonator as the barrier 314, the protective quality of the dummy load is not under etched to form the mass load 316. 如此,被保护的并联谐振器的质量负载316与提供保护的并联谐振器的上电极314的图案能够自对准,保证并联谐振的性能,进而保证采用此种加工方法形成的滤波器的性能。 Thus, the quality of the parallel resonators protected load 316 can be self-aligned with the pattern provides protection parallel resonator electrode 314, to ensure that the performance of parallel resonance, thereby ensuring the performance of such a processing method using the formed filter. 质量负载316由金属或非金属构成,例如,其材料可以包括金(Au)、钨(W)、钥(Mo)、钼(Pt)、钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属或其合金,或者可以包括碳化硅(SiC)、二氧化硅、氮化硅、聚合物等类似非金属,但并不局限于以上材料。 Mass load 316 composed of a metal or metalloid, e.g., which materials may include gold (Au), tungsten (W), the key (Mo), molybdenum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW ), aluminum (Al), titanium (Ti) and the like or an alloy thereof, or the like may comprise a non-metal carbide (SiC), silicon dioxide, silicon nitride, and other polymers, but are not limited to the above materials.

[0110] 最后,如图5的步骤S508,执行去胶步骤,加工结构如图3H所示。 [0110] Finally, in step S508 in FIG. 5, performing ashing step, processing the structure shown in Figure 3H. 得到加工完成的串联谐振器301和带有质量负载的并联谐振器302。 To give the finished series resonator 301 and a parallel resonator with a mass load of 302. 在P3区域和Q3区域,并联谐振器302的质量负载316与上电极314精确对准,不会出现如图1A和图1B所示的未对准的问题,从而改善了器件的性能。 In the region P3 and Q3 regions, parallel resonator mass 302 and the upper electrode 316 of the load 314 precisely aligned, without problems of misalignment shown in Fig. 1A and 1B, the thus improving the performance of the device.

[0111] 另外,尽管图中没有示出,实际上,串联谐振器301同样可以具有质量负载,其加工工艺与并联谐振器302的工艺类似,这里不再重复。 [0111] Further, although not shown, in fact, the series resonator 301 may have the same mass load, a similar process which process the parallel resonator 302, will not be repeated here.

[0112] 在第一实例中,伪质量负载的图案大于质量负载的图案。 [0112] In a first example, a pattern of the dummy load mass greater than the mass of the load pattern. 伪质量负载的图案上任何一点与质量负载的图案上任何一点之间的距离在0.1ym至IOOOOym以内。 The distance between any point on the mass loading on the dummy pattern at any point in the pattern of the mass load to less than 0.1ym IOOOOym. 在实际的谐振器加工中,伪质量负载的图案上任何一点与质量负载的图案上任何一点之间的距离通常可以在Iym至ΙΟΟμπι以内。 In the actual processing of the resonator, the distance between any point on the mass of the load at any point on the pattern of the dummy load pattern quality can generally be within Iym to ΙΟΟμπι. 伪质量负载的图案形状可以与质量负载的图案形状相同,也可以不同。 Mass load pattern shape dummy pattern may be the same as the shape of the mass load, or may be different.

[0113] 通过以上描述可以看出,图3和图5所示的工艺过程为形成串联谐振器和并联谐振器的上电极之后,先刻蚀形成并联谐振器的质量负载再去胶。 After [0113] As can be seen from the above description, the process of FIG. 3 and FIG. 5 is shown in the upper electrode of the series resonator and the parallel resonator is formed, etching to form the first parallel resonator mass load gum again. 在另一实施例中,可以采用其他的加工流程,例如,可以在形成串联谐振器和并联谐振器的上电极之后,先去胶再刻蚀形成并联谐振器的质量负载[0114] 在刻蚀形成并联谐振器的质量负载的过程中,并联谐振器的上电极作为阻挡,保护其下的伪质量负载不被刻蚀,形成质量负载。 In another embodiment, other manufacturing processes may be employed, for example, after the upper electrode of the series resonator and the parallel resonator is formed, and then etched to form the gel mass go parallel resonators load [0114] etching process mass load parallel resonator is formed, the upper electrode of the parallel resonator as a barrier to protect the lower dummy load mass is not etched to form a mass load. 如此,并联谐振器的质量负载与并联谐振器的上电极的图案能够自对准。 Thus, the electrode pattern on mass load and parallel resonators of the parallel resonator can be self-aligned.

[0115] 在图3和图5所示出的实现方式中,质量负载和上电极实现自对准;实际上,当并联谐振器的结构为质量负载在下电极之下时,可采取同样的方式实现质量负载和下电极的自对准。 [0115] In the implementation shown in FIG. 3 and FIG. 5, the mass of the load and to achieve self-alignment of the upper electrode; in fact, when the parallel resonator structure of the lower electrode under a load mass, the same approach may be mass load and a lower electrode to achieve self-alignment.

[0116] 在图3和图5所示出的实现方式中,一层质量负载和上电极实现自对准;实际上,当并联谐振器的结构为多层质量负载时,可采取同样的方式实现多层质量负载的自对准以及多层质量负载与上电极的自对准。 [0116] In the implementation shown in FIG. 3 and FIG. 5, the mass load and the upper electrode layer to achieve self-alignment; in fact, when the parallel resonator is a multilayer structure of the mass load can be taken in the same manner self-aligned and self-aligned to the mass load on the multilayer electrode of the multi-tier load mass.

[0117] 在图3和图5所示出的实现方式中,上电极和质量负载通过光刻和刻蚀的方式形成;在另一种实现方式中,上电极和质量负载可以通过其他的方式形成,如liftoff、电镀 [0117] In the implementation shown in FIG. 3 and FIG. 5, the mass of the load and the upper electrode are formed by photolithography and etching manner; In another implementation, the mass load and the upper electrode may be by other means form, such as a liftoff, electroplating

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[0118] 在图3和图5所示出的实现方式中,串联谐振器和并联谐振器的上电极同时形成;在另一种实现方式中,串联谐振器和并联谐振器的上电极可以在不同步骤中分别形成,串联谐振器和并联谐振器的上电极可以由同种材料构成,也可以由不同材料构成。 [0118] In FIGS. 3 and 5 in the illustrated implementation, the upper electrode of the series resonator and the parallel resonator formed simultaneously; In another implementation, an upper electrode, the series resonator and the parallel resonator may be different steps are formed, the upper electrode series resonator and the parallel resonator may be formed of the same material, they may be formed of different materials.

[0119] 在图31-3K示出的俯视图中,质量负载和上电极的形状为矩形;质量负载和上电极的形状可以由其他形状构成,例如,可以是多边形,圆形,椭圆形等。 [0119] In the plan view shown in FIG 31-3K, the mass load and the electrode shape is rectangular; loading mass and shape of the upper electrode may be formed of other shapes, for example, be polygonal, circular, elliptical, and the like.

[0120] 在图3和图5所示出的实现方式中,串联谐振器以及并联谐振器的上电极和下电极边缘对准。 [0120] In the implementation shown in FIG. 3 and FIG. 5, the upper and lower electrodes of the series resonator and the parallel resonator edge is aligned. 实际上,串联谐振器以及并联谐振器的上电极的任何一部分可以位于下电极以内,也可以超出下电极的边缘,位于下电极以外。 In fact, any portion of the upper electrode of the series resonator and the parallel resonator may be located within the lower electrode, it may be beyond the edge of the lower electrode, located outside the lower electrode. 例如上电极的一部分需要超出下电极的边缘,位于下电极以外,以引出上电极的电学信号且不影响谐振器的有效面积;上电极的一部分需要位于下电极以内,以引出下电极的电学信号且不影响谐振器的有效面积。 For example, a portion of the upper electrode required beyond the edge of the lower electrode, located outside the lower electrode, an electrical signal to the upper electrode lead-out without affecting the effective area of ​​the resonator; upper electrode needs to be in the lower portion within the electrode, the electrical signal to the lower electrode lead-out It does not affect the effective area of ​​the resonator.

[0121] 图中未示出的基底可以由硅、锗、砷化镓、氮化镓、蓝宝石等构成,并不局限于以上材料。 [0121] FIG substrate (not shown) may be composed of silicon, germanium, gallium arsenide, gallium nitride, sapphire or the like, not limited to the above materials. 声反射结构可以为在谐振器的薄膜下方形成的空气腔或者由高、低声阻抗材料交替堆叠形成的声反射镜。 Acoustic reflector structure may be an air chamber is formed below the thin film resonator or a high, low acoustic impedance material are alternately stacked to form the acoustic mirror.

[0122] 图4A-4H示出了根据本发明另一实施例的带有周边质量负载的谐振器400在各个工艺阶段的结构图,而图41-4K示出了其中关键步骤的结构俯视图。 [0122] FIGS. 4A-4H illustrates a configuration diagram of the periphery of the resonator with a mass load to another embodiment of the present invention in each process stage 400, and FIG 41-4K shows a structure in which the key step is a plan view of FIG. 为了明确和简化描述,图4中基底和声反射结构并未在图中画出,但并不代表谐振器不需要基底或者声反射结构。 In order to clarify and simplify the description, the sound-reflecting substrate structure of FIG. 4 are not shown in the drawings, but does not represent acoustic resonator does not require a substrate or a reflective structure. 同样在图41-4K中,为了明确和简化描述,不相关的结构并未在图中示出。 Also in Figure 41-4K, in order to clarify and simplify the description, unrelated structures are not shown in FIG. 图6则示出了相应的加工流程图。 FIG 6 shows a flowchart corresponding processing.

[0123] 首先,如图6的步骤S601,在基底上形成下电极412,加工结构如图4A所示。 [0123] First, in step S601 6 in the figure, the lower electrode 412 is formed on the substrate, processing the structure shown in Figure 4A. 下电极412由如下金属构成:金(Au)、钨(W)、钥(Mo)、钼(Pt)、钌(Ru)、铱(Ir)、钛钨(Tiff)、铝(Al)、钛(Ti)等类似金属或其合金,但并不局限于以上材料。 The lower electrode 412 is composed of the following metals: gold (Au), tungsten (W), the key (Mo), molybdenum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (Tiff), aluminum (Al), titanium (Ti) and the like or an alloy thereof, but is not limited to the above materials.

[0124] 然后,如图6的步骤S602,在下电极412上形成压电层410,加工结构如图4B所示。 [0124] Then, in step S602 in FIG. 6, the piezoelectric layer 410 is formed on the lower electrode 412, the processing structure shown in Figure 4B. 压电层410由以下材料构成:氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNb03)、石英(quartz)、银酸钾(KNb03)或钽酸锂(LiTa03)等材料,但不局限于以上材料。 The piezoelectric layer 410 is composed of the following materials: aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNb03), quartz (quartz), potassium silver (KNb03) or tantalum lithium (LiTa03) materials such as, but not limited to the above materials.

[0125] 然后,如图6的步骤S603,在压电层410上形成伪周边质量负载422,加工结构如图4C所示,其俯视图如图41所示。 [0125] Then, in step S603 in FIG. 6, the piezoelectric layer 410 is formed on the periphery of the quality of the dummy load 422, the processing structure shown in FIG. 4C, a top view shown in Figure 41. 伪周边质量负载422的图案比周边质量负载的图案大,即伪周边质量负载422的图案包括周边质量负载的图案,可以在之后的叙述中变得明了。 Dummy pattern 422 surrounding mass load than the surrounding mass of the load pattern of large, i.e., dummy patterns 422 comprises a peripheral surrounding mass load mass load pattern may become apparent in the following description.

[0126] 然后,如图6的步骤S604,沉积上电极层420,加工结构如图4D所示。 [0126] Then, in step S604, as shown in FIG. 6, is deposited on the electrode layer 420, the processing structure shown in Figure 4D. 上电极层420由如下金属构成:金(Au)、钨(W)、钥(Mo)、钼(Pt)、钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属或其合金,但并不局限于以上材料。 The upper electrode layer 420 is composed of the following metals: gold (Au), tungsten (W), the key (Mo), molybdenum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium (Ti) and the like or an alloy thereof, but is not limited to the above materials.

[0127] 然后,如图6的步骤S605,光刻,加工结构如图4E所示。 [0127] Then, in step S605 in FIG. 6, photolithography, machining the structure shown in Figure 4E. 光刻胶424的图案为上电极的图案。 The resist pattern 424 is patterned on the electrode.

[0128] 然后,如图6的步骤S606,刻蚀形成上电极414,加工结构如图4F所示,其俯视图如图4J所不。 [0128] Then, in step S606 in FIG. 6, the upper electrode 414 is etched, the processing structure shown in FIG. 4F, which are not shown in FIG 4J plan view. 上电极414的一部分414a与压电层410接触,上电极414的另一部分414b和414c在伪周边质量负载422上,但没有完全覆盖伪周边质量负载422 (图4J中的虚线示出了周边质量负载422的内径)。 414 414a contact with the upper portion of the electrode with the piezoelectric layer 410, upper electrode 414 of another portion 414b and 414c in the periphery of the dummy load mass 422, but does not completely cover the broken line in the dummy load 422 surrounding mass (FIG. 4J illustrates the surrounding mass the inner diameter of the load 422).

[0129] 然后,如图6的步骤S607,刻蚀形成周边质量负载418,加工结构如图4G所示,其俯视图如图4K所示。 [0129] Then, in step S607 in FIG. 6, formed by etching as shown in the surrounding mass load 418, the processing structure shown in Figure 4G, a top view in FIG. 4K. 在刻蚀形成周边质量负载418的过程中,光刻胶424和上电极的一部分414b和414c作为阻挡,保护其下的伪周边质量负载不被刻蚀,形成周边质量负载418。 Etching process of forming the peripheral mass load 418, the photoresist 424 and the upper portion of the electrode 414b and 414c as a barrier to protect the lower periphery of the dummy load is not etched by mass, 418 formed in the periphery of the mass load. 如此,被保护的周边质量负载418与提供保护的上电极414的图案的外边缘对准(图4K中的虚线示出了周边质量负载422的内径),谐振器的Q值能够得到最大化的提升。 Thus, the peripheral mass of the load to be protected with the outer edges of the pattern 418 provided on the protective electrode 414 are aligned (dashed line in FIG. 4K illustrates the inner diameter of the peripheral mass 422 of the load), Q value of the resonator can be maximized upgrade. 周边质量负载418由金属或非金属构成:金(Au)、钨(W)、钥(Mo)、钼(Pt)、钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属或其合金、碳化硅(SiC)、二氧化硅、氮化硅、聚合物等类似非金属,但并不局限于以上材料。 Peripheral mass load 418 made of a metal or metalloid: gold (Au), tungsten (W), the key (Mo), molybdenum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al similar non-metallic), titanium (Ti) and the like metals or alloys thereof, silicon carbide (SiC), silicon dioxide, silicon nitride, and other polymers, but are not limited to the above materials.

[0130] 最终,如图6的步骤S608,去胶,加工结构如图4H所示。 [0130] Finally, the step S608 in FIG. 6, stripping, 4H processing structure shown in FIG. 带有周边质量负载的谐振器400加工完成。 Resonator 400 with the surrounding mass of the finished load. 在P4区域和Q4区域,周边质量负载与上电极精确对准,不会出现如图2A和图2B所示的未对准。 P4 and Q4 region in the region surrounding the mass load precisely aligned with the upper electrode, as shown in FIG. 2A and will not be misaligned in Figure 2B.

[0131] 在该实施例中,伪周边质量负载的图案大于周边质量负载的图案。 [0131] In this embodiment, the dummy pattern is greater than the outside periphery of the mass load mass load pattern. 伪周边质量负载的图案上任何一点与周边质量负载的图案上任何一点之间的距离在0.1 μ π!至10000 μ m以内。 Mass load on the dummy pattern surrounding a distance between any point to any point on the periphery of the mass load in a pattern 0.1 μ π! To less than 10000 μ m. 在实际的谐振器加工中,伪周边质量负载的图案上任何一点与周边质量负载的图案上任何一点之间的距离通常在Iym至IOOym以内。 In the actual processing of the resonator, the distance between any point on the periphery of the mass load of the dummy pattern at any point on the periphery of the mass load pattern usually within Iym to IOOym. 伪周边质量负载的图案形状可以与周边质量负载的图案形状相同,也可以不同。 Shaped dummy pattern surrounding the mass load can be the same shape as the pattern of the periphery of the mass load, or may be different.

[0132] 本实施例所示的制造工艺还可以有其他形式的实现方式,不只局限于图4和图6所示出的实现方式。 Manufacturing process [0132] The present embodiment illustrated embodiment can also have other forms of implementation, the implementation illustrated in FIG. 4 and FIG. 6 is not limited.

[0133] 在图4和图6所示出的实现方式中,加工流程为形成上电极之后,先刻蚀形成周边质量负载再去胶;在另一种实现方式中,加工流程为形成上电极之后,先去胶再刻蚀形成周边质量负载。 After another implementation, the processing flow to form an upper electrode; [0133] The implementation shown in FIGS. 4 and 6, the machining process of the upper electrode is formed after the first etching to form the surrounding gum mass load again , and then etched to form peripheral go plastic mass load. 在刻蚀形成周边质量负载的过程中,上电极作为阻挡保护其下的伪周边质量负载不被刻蚀,形成周边质量负载。 During the etching process is formed in the periphery of the mass load, as the upper electrode of the dummy barrier protect the surrounding mass loading is not etched, formed outside the mass load. 如此,周边质量负载与上电极的图案能够自对准。 Thus, the pattern surrounding the mass load and the upper electrode can be self-aligned.

[0134] 在图4和图6所示出的实现方式中,周边质量负载和上电极实现自对准;实际上,当谐振器的结构为周边质量负载在下电极之下时,可采取同样的方式实现周边质量负载和下电极的自对准。 [0134] implementations shown in FIGS. 4 and 6, the peripheral mass of the load and to achieve self-alignment of the upper electrode; in fact, when the electrode structure of the resonator is below the lower periphery of the mass load, can take the same manner surrounding the mass load and the lower electrode self-alignment.

[0135] 在图4和图6所示出的实现方式中,一层周边质量负载和上电极实现自对准;实际上,当谐振器的结构为多层周边质量负载时,可采取同样的方式实现多层周边质量负载的自对准以及多层周边质量负载与上电极的自对准。 [0135] In the implementation shown in FIGS. 4 and 6, the peripheral mass loading layer and the upper electrode to achieve self-alignment; in fact, when the multilayer structure of the resonator of the surrounding mass load, can take the same and a multilayer self-aligned self-aligned with the upper periphery of the mass load of electrode multilayer manner surrounding the mass load.

[0136] 在图4和图6所示出的实现方式中,上电极和周边质量负载通过光刻和刻蚀的方式形成;在另一种实现方式中,上电极和周边质量负载可以通过其他的方式形成,如liftoff,电镀等。 [0136] implementations shown in FIGS. 4 and 6, the upper electrode and the peripheral mass of the load formed by photolithography and etching methods; In another implementation, the upper electrode and the peripheral mass of the load by other forming means, such as a liftoff, electroplating and the like.

[0137] 在图41-4K示出的俯视图中,周边质量负载的外边缘和上电极的形状为矩形;质量负载的外边缘和上电极的形状可以由其他形状构成,例如,可以是多边形,圆形,椭圆形 [0137] In the plan view shown in FIG 41-4K, the shape of the outer peripheral edge of the upper electrode and a mass load is rectangular; and the shape of the outer edge of the upper electrode may be constituted by a mass load other shapes, for example, be polygonal, circular, oval

坐寸ο Sit inch ο

[0138] 在图4和图6所示出的实现方式中,上电极和下电极边缘对准。 [0138] implementations shown in FIGS. 4 and 6, the upper and lower electrodes aligned edge. 实际上,上电极的任何一部分可以位于下电极以内,也可以超出下电极的边缘,位于下电极以外。 In fact, the upper electrode may be located within any part of the lower electrode, may be beyond the edge of the lower electrode, located outside the lower electrode. 例如上电极的一部分需要超出下电极的边缘,位于下电极以外,以引出上电极的电学信号且不影响谐振器的有效面积;上电极的一部分需要位于下电极以内,以引出下电极的电学信号且不影响谐振器的有效面积。 For example, a portion of the upper electrode required beyond the edge of the lower electrode, located outside the lower electrode, an electrical signal to the upper electrode lead-out without affecting the effective area of ​​the resonator; upper electrode needs to be in the lower portion within the electrode, the electrical signal to the lower electrode lead-out It does not affect the effective area of ​​the resonator.

[0139] 同样,谐振器的基底可以由硅、锗、砷化镓、氮化镓、蓝宝石等构成,并不局限于以上材料。 [0139] Similarly, the resonator may be constituted by a substrate of silicon, germanium, gallium arsenide, gallium nitride, sapphire or the like, not limited to the above materials. 声反射结构可以为在谐振器的薄膜下方形成的空气腔或者由高、低声阻抗材料交替堆叠形成的声反射镜。 Acoustic reflector structure may be an air chamber is formed below the thin film resonator or a high, low acoustic impedance material are alternately stacked to form the acoustic mirror.

[0140] 下面将详细描述根据本发明再一实施例的谐振器制造方法。 [0140] Next, the manufacturing method according to the present invention, a resonator according to a further embodiment described in detail.

[0141] 首先,在基底上形成串联谐振器和并联谐振器的下电极311和312,加工结构如图7A所示。 [0141] First, a lower electrode 311 in FIG. 7A series resonators and the parallel resonators 312 and processed on the substrate structure shown in FIG.

[0142] 然后,在下电极311和312上形成串联谐振器和并联谐振器的压电层310,加工结构如图7B所示。 [0142] Then, the lower electrode 311 is formed of the piezoelectric layer 310 and the series resonator and the parallel resonator 312, the processing structure shown in Figure 7B.

[0143] 然后,在压电层310上形成上电极层319,加工结构如图7C所示。 [0143] Then, the upper electrode layer 319 is formed on the piezoelectric layer 310, the processing structure shown in Figure 7C.

[0144] 然后,在并联谐振器的上电极层上形成伪质量负载318,加工结构如图7D所示。 [0144] Then, the upper electrode layer is formed on the parallel resonator quality dummy load 318, the processing structure shown in Figure 7D. 伪质量负载318的图案大于质量负载的图案,即伪质量负载318的图案包括质量负载的图案, Dummy pattern 318 mass load greater than the mass of the load pattern, i.e. a pattern comprising a pattern 318 of the pseudo mass load mass load,

[0145] 然后,进行光刻,加工结构如图7E所示。 [0145] Then, photolithography, machining the structure shown in Figure 7E. 串联谐振器和并联谐振器上形成的光刻胶分别为321和322。 A photoresist is formed on the series resonators and the parallel resonators 321 and 322, respectively. 光刻胶321和322的图案分别为串联谐振器和并联谐振器上电极的图案。 The photoresist patterns 321 and 322 are patterned on the series resonator and the parallel resonator electrode.

[0146] 然后,刻蚀形成并联谐振器的质量负载316,加工结构如图7F所示。 [0146] Then, etching to form parallel resonator mass load 316, the processing structure shown in Figure 7F.

[0147] 然后,刻蚀形成串联谐振器和并联谐振器的上电极313和314,加工结构如图7G所示。 [0147] Then, etched to form the upper electrode 313 and a series resonator and a parallel resonator 314, the processing structure shown in Figure 7G. 在刻蚀形成并联谐振器的上电极314的过程中,并联谐振器上的光刻胶322和并联谐振器的质量负载316作为阻挡,保护其下的上电极不被刻蚀,形成上电极314。 In the process of etching the upper electrode 314 are formed parallel resonator, a photoresist mass 322 and the parallel resonators of the parallel resonator on the load 316 is not etched as a barrier to protect the lower electrode, the upper electrode 314 is formed . 如此,被保护的并联谐振器的上电极314与提供保护的并联谐振器的质量负载316的图案能够自对准,保证并联谐振的性能,进而保证采用此种加工方法形成的滤波器的性能。 Thus, the quality of the upper electrode 314 to be protected and parallel resonators of the parallel resonator protect a load of 316 self-aligned pattern can, to ensure the performance of parallel resonance, thereby ensuring the performance of such a processing method using the formed filter.

[0148] 最终,去胶,加工结构如图7H所示。 [0148] Finally, the ashing, the processing structure shown in FIG. 7H. 串联谐振器301和带有质量负载的并联谐振器302加工完成。 301 series resonator and the parallel resonator 302 with a mass load of the finished. 在P3区域和Q3区域,并联谐振器302的质量负载316与上电极314精确对准,不会出现如图1A和图1B所示的未对准。 In the region P3 and Q3 regions, parallel resonator mass 302 and the upper electrode 316 of the load 314 precisely aligned, misalignment does not occur as shown in FIG 1A and FIG 1B.

[0149] 其中,伪质量负载的图案可以大于质量负载的图案。 [0149] wherein, the dummy pattern may be mass load greater than the mass of the load pattern. 伪质量负载的图案上任何一点与质量负载的图案上任何一点之间的距离在0.Ιμπι至10000 μ m以内。 The distance between any point on the mass loading on the dummy pattern at any point in the mass of the load pattern to 0.Ιμπι 10000 μ m or less. 在实际的谐振器加工中,伪质量负载的图案上任何一点与质量负载的图案上任何一点之间的距离通常在I μ m至100 μ m以内。 In the actual processing of the resonator, the distance between any point on the mass of the load at any point on the pattern of the pattern of the dummy load mass is usually less than I μ m to 100 μ m. 伪质量负载的图案形状可以与质量负载的图案形状相同,也可以不同。 Mass load pattern shape dummy pattern may be the same as the shape of the mass load, or may be different.

[0150] 本实施例所描述的工艺过程还可以有其他形式的实现方式,不只局限于图7所示出的实现方式。 [0150] Example embodiments of the present process described can also have other forms of implementation, the implementation illustrated in FIG. 7 is not limited.

[0151] 在图7所示出的实现方式中,质量负载和上电极实现自对准;实际上,当并联谐振器的结构为质量负载在下电极之上时,可采取同样的方式实现质量负载和下电极的自对准。 [0151] In the implementation shown in FIG. 7, the upper electrode, and a mass load to achieve self-alignment; in fact, when the parallel resonator structure is a mass load on the lower electrode, the same approach can be achieved by mass loading and a lower electrode self-alignment.

[0152] 下面将详细描述根据本发明另一实施例的谐振器制造方法。 [0152] The method of manufacturing a resonator according to another embodiment of the present invention will be described in detail below.

[0153] 首先,在基底上形成下电极412,加工结构如图8A所示。 [0153] First, the lower electrode 412 is formed on the substrate, processing the structure shown in Figure 8A.

[0154] 然后,在下电极412上形成压电层410,加工结构如图8B所示。 [0154] Then, the piezoelectric layer 410 is formed on the lower electrode 412, the processing structure shown in Figure 8B.

[0155] 然后,在压电层410上形成上电极层420,加工结构如图8C所示。 [0155] Then, the upper electrode layer 420 is formed on the piezoelectric layer 410, the processing structure shown in Figure 8C.

[0156] 然后,在上电极层420上形成伪周边质量负载422,加工结构如图8D所示。 [0156] Then, a dummy load 422 mass surrounding the upper electrode layer 420, the processing structure shown in Figure 8D. 伪周边质量负载422的图案比周边质量负载的图案大,即伪周边质量负载422的图案包括周边质量负载的图案。 Dummy pattern surrounding the load 422 mass load than the surrounding mass of large pattern, i.e. the pattern 422 includes a peripheral mass loading dummy pattern surrounding the mass load.

[0157] 然后,光刻,加工结构如图8E所示。 [0157] Then, photolithography, machining the structure shown in Figure 8E. 光刻胶424的图案为上电极的图案。 The resist pattern 424 is patterned on the electrode.

[0158] 然后,刻蚀形成周边质量负载418,加工结构如图8F所示。 [0158] Then, etching to form the periphery of the mass load 418, the processing structure shown in Figure 8F.

[0159] 然后,刻蚀形成上电极414,加工结构如图8G所示。 [0159] Then, the upper electrode 414 formed by etching, the processing structure shown in FIG. 8G. 在刻蚀形成上电极414的过程中,光刻胶424和周边质量负载418作为阻挡,保护其下的上电极不被刻蚀,形成上电极414。 Etching process of forming the electrodes 414, 424 and a peripheral mass load photoresist 418 is not etched as a barrier to protect the lower electrode, the upper electrode 414 is formed. 如此,被保护的上电极414与提供保护的周边质量负载418的图案能够自对准,谐振器的Q值能够得到最大化的提升。 Thus, the upper electrode 414 and protected to provide protection of the surrounding mass load 418 can be self-aligned pattern, Q value of the resonator can be maximized lift.

[0160] 最终,去胶,加工结构如图8H所示。 [0160] Finally, the ashing, 8H processing structure shown in FIG. 带有周边质量负载的谐振器400加工完成。 Resonator 400 with the surrounding mass of the finished load. 在P4区域和Q4区域,周边质量负载与上电极精确对准,不会出现如图2A和图2B所示的未对准。 P4 and Q4 region in the region surrounding the mass load precisely aligned with the upper electrode, as shown in FIG. 2A and will not be misaligned in Figure 2B.

[0161] 其中,伪周边质量负载的图案大于周边质量负载的图案。 [0161] wherein the dummy pattern is greater than the outside periphery of the mass load mass load pattern. 伪周边质量负载的图案上任何一点与周边质量负载的图案上任何一点之间的距离在0.1ym至IOOOOym以内。 The distance between any point on the periphery of the mass load of the dummy pattern at any point on the periphery of a pattern of mass load to IOOOOym within 0.1ym. 在实际的谐振器加工中,伪周边质量负载的图案上任何一点与周边质量负载的图案上任何一点之间的距离通常在Iym至IOOym以内。 In the actual processing of the resonator, the distance between any point on the periphery of the mass load of the dummy pattern at any point on the periphery of the mass load pattern usually within Iym to IOOym. 伪周边质量负载的图案形状可以与周边质量负载的图案形状相同,也可以不同。 Shaped dummy pattern surrounding the mass load can be the same shape as the pattern of the periphery of the mass load, or may be different.

[0162] 本实施例的工艺过程还可以有其他形式的实现方式,不只局限于图8所示出的实现方式。 [0162] Example embodiment of the present process may also be other forms of implementation, the implementation illustrated in FIG. 8 is not limited.

[0163] 在图8所示出的实现方式中,周边质量负载和上电极实现自对准;实际上,当谐振器的结构为周边质量负载在下电极之上时,可采取同样的方式实现周边质量负载和下电极的自对准。 [0163] In the implementation shown in FIG. 8, the periphery of the mass load and the upper electrode to achieve self-alignment; in fact, when the structure of the resonator is above the lower electrode surrounding the mass load can be taken outside the same manner self-alignment of the mass load and the lower electrode.

[0164] 下面将详细描述根据本发明另一实施例的谐振器制造方法。 [0164] The method of manufacturing a resonator according to another embodiment of the present invention will be described in detail below.

[0165] 在本实施例中,提供了一种不需要“伪图案”的自对准方法。 [0165] In the present embodiment, it is provided which does not require "dummy pattern" self-aligned method.

[0166] 图9Α-9Η示出了带有钝化结构的谐振器300的加工结构图。 [0166] FIG 9Α-9Η illustrates a processing configuration diagram of a resonator with a passivation structure 300. 出于清楚和简化的目的,图9中基底和声反射结构并未在图中画出,但并不代表谐振器不需要基底或者声反射结构。 For purposes of clarity and simplicity, the sound-reflecting substrate structure of FIG. 9 is not shown in the drawings, but does not represent acoustic resonator does not require a substrate or a reflective structure.

[0167] 钝化结构的目的是保护谐振器不受周围环境中水汽、沾污等的影响。 Objective [0167] The passivation structure of the resonator is protected from the ambient environment, moisture, contamination and the like. 如果谐振器没有钝化结构或者钝化结构的图案与上电极的图案没有对准,谐振器的谐振频率会发生变化,性能也可能会下降。 If the resonator is not the passivation structure or pattern as a passivation structure is not aligned with the upper electrode, the resonant frequency of the resonator will change, performance may be degraded.

[0168] 首先,在基底上形成下电极312,加工结构如图9Α所示。 [0168] First, the lower electrode 312 is formed on the substrate, the processing structure shown in FIG 9Α. 下电极312由如下金属构成:金(Au)、钨(W)、钥(Mo)、钼(Pt)、钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属或其合金,但并不局限于以上材料。 The lower electrode 312 is composed of the following metals: gold (Au), tungsten (W), the key (Mo), molybdenum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium (Ti) and the like or an alloy thereof, but is not limited to the above materials.

[0169] 然后,在下电极312上形成压电层310,加工结构如图9B所示。 [0169] Then, the piezoelectric layer 310 is formed on the lower electrode 312, the processing structure shown in Figure 9B. 压电层310由以下材料构成:氮化招(AlN)、氧化锌(ZnO)、错钛酸铅(PZT)、银酸锂(LiNb03)、石英(quartz)、铌酸钾(KNb03)或钽酸锂(LiTa03)等材料,但不局限于以上材料。 The piezoelectric layer 310 is composed of the following materials: strokes nitride (AlN), zinc oxide (ZnO), lead titanate error (PZT), lithium silver (LiNb03), quartz (quartz), potassium niobate (KNb03) or tantalum lithium (LiTa03) materials such as, but not limited to the above materials.

[0170] 然后,在压电层310上形成上电极层318,加工结构如图9C所示。 [0170] Then, an upper electrode layer 318, the processing structure shown in Figure 9C on the piezoelectric layer 310. 上电极层318由如下金属构成:金(Au)、钨(W)、钥(Mo)、钼(Pt)、钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属或其合金,但并不局限于以上材料。 The upper electrode layer 318 is composed of the following metals: gold (Au), tungsten (W), the key (Mo), molybdenum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium (Ti) and the like or an alloy thereof, but is not limited to the above materials.

[0171] 然后,在上电极层318上形成钝化层320,加工结构如图9D所示。 [0171] Then, a passivation layer 320 is formed on the upper electrode layer 318, the processing structure shown in Figure 9D. 钝化层320由如下材料构成,碳化硅(SiC)、氧化铝、金刚石、类金刚石炭(DLC)、氧化硅、氮化硅及疏水聚合物等类似材料,但并不局限于以上材料。 The passivation layer 320 is made of a material, silicon carbide (SiC), alumina, diamond, diamond-like material on carbon (the DLC), silicon oxide, and a hydrophobic polymer like, but not limited to the above materials.

[0172] 然后,光刻,加工结构如图9E所示。 [0172] Then, photolithography, machining the structure shown in Figure 9E. 光刻胶322的图案为上电极的图案。 The resist pattern 322 is patterned on the electrode.

[0173] 然后,刻蚀形成钝化结构316,加工结构如图9F所示。 [0173] Then, a passivation structure 316 formed by etching, the processing structure as shown in FIG 9F.

[0174] 然后,刻蚀形成上电极314,加工结构如图9G所示。 [0174] Then, an upper electrode 314 is etched, the processing structure as shown in FIG 9G. 在刻蚀形成上电极314的过程中,光刻胶322和钝化结构316作为阻挡,保护其下的上电极不被刻蚀,形成上电极314。 Etching process is formed on the electrode 314, the photoresist 322 and the passivation structure 316 as a barrier to protect the upper electrode is not etched under the upper electrode 314 is formed. 如此,被保护的上电极314与提供保护的钝化结构316的图案能够自对准,保护谐振器不受周围环境的影响。 Thus, the upper electrode 314 is protected with the protection of the passivation structure 316 can be self-aligned pattern, the resonator protection from the surrounding environment.

[0175] 最终,去胶,加工结构如图9H所示。 [0175] Finally, the ashing, the processing structure as shown in FIG 9H. 带有钝化结构的谐振器300加工完成。 Resonator structure 300 with the passivation process is completed. 在P3区域和Q3区域,钝化结构与上电极精确对准。 In the region P3 and Q3 regions, the passivation structure and precise alignment of the upper electrode.

[0176] 本实施例所描述的制造工艺还有其他形式的实现方式,不只局限于图9所示出的实现方式。 [0176] The present manufacturing processes and other forms of implementation of this embodiment as described, is not limited to the implementation shown in FIG. 9.

[0177] 在图9所示出的实现方式中,加工流程为形成钝化结构之后,先刻蚀形成上电极再去胶;在另一种实现方式中,加工流程为形成钝化结构之后,先去胶再刻蚀形成上电极。 [0177] In the implementation shown in FIG. 9, the flow of processing after formation of the passivation structure, the first electrode is formed on the etched again gum; In another implementation, the processing flow for the formation of a passivation structure after the first stripping and then etched to form the upper electrode. 在刻蚀形成上电极的过程中,钝化结构作为阻挡保护其下的上电极不被刻蚀。 During the etching process is formed on the electrode, the passivation structure as the upper electrode under protective barrier is not etched. 如此,钝化结构与上电极的图案能够自对准。 Thus, the pattern of the passivation structure and the upper electrode can be self-aligned.

[0178] 在9所示出的实现方式中,钝化结构和上电极实现自对准;实际上,当谐振器的结构为钝化结构在下电极之下时,可采取同样的方式实现钝化结构和下电极的自对准,同样能够保护谐振器不受周围环境的影响。 [0178] In the implementation shown in FIG. 9, the passivation structure and the electrodes in a self-aligned on; in fact, when the structure of the resonator is lower passivation structure under the electrode, the same approach can be implemented passivated structure and the lower electrode self-alignment, the same resonator can be protected from the surrounding environment.

[0179] 在图9所示出的实现方式中,钝化结构和上电极实现自对准;实际上,当谐振器的结构为多层钝化结构时,可采取同样的方式实现多层钝化结构的自对准以及多层钝化结构与上电极的自对准。 [0179] In the implementation shown in FIG. 9, the passivation structure and the electrodes in a self-aligned on; in fact, when a multilayer structure of the resonator of the passivation structure, the same approach can be implemented multilayer blunt self-aligned and self-aligned structure of the multilayer structure and the upper electrode passivation.

[0180] 在图9所示出的实现方式中,上电极和下电极边缘对准。 [0180] In the implementation shown in FIG. 9, the upper and lower electrodes aligned edge. 实际上,上电极的任何一部分可以位于下电极以内,也可以超出下电极的边缘,位于下电极以外。 In fact, the upper electrode may be located within any part of the lower electrode, may be beyond the edge of the lower electrode, located outside the lower electrode. 例如上电极的一部分需要超出下电极的边缘,位于下电极以外,以引出上电极的电学信号且不影响谐振器的有效面积;上电极的一部分需要位于下电极以内,以引出下电极的电学信号且不影响谐振器的有效面积。 For example, a portion of the upper electrode required beyond the edge of the lower electrode, located outside the lower electrode, an electrical signal to the upper electrode lead-out without affecting the effective area of ​​the resonator; upper electrode needs to be in the lower portion within the electrode, the electrical signal to the lower electrode lead-out It does not affect the effective area of ​​the resonator.

[0181] 在图9所示出的实现方式中,上电极和钝化结构通过光刻和刻蚀的方式形成;在另一种实现方式中,上电极和钝化结构可以通过其他的方式形成,如liftoff,电镀等。 [0181] In the implementation shown in FIG. 9, the upper electrode and the passivation structure are formed by photolithography and etching manner; In another implementation, the upper electrode and the passivation structure may be formed by other means as a liftoff, electroplating and the like.

[0182] 另外,谐振器的基底由硅、锗、砷化镓、氮化镓、蓝宝石等构成,并不局限于以上材料。 [0182] Further, the resonator is constituted by a substrate of silicon, germanium, gallium arsenide, gallium nitride, sapphire or the like, not limited to the above materials. 声反射结构可以为在谐振器的薄膜下方形成的空气腔或者由高、低声阻抗材料交替堆叠形成的声反射镜。 Acoustic reflector structure may be an air chamber is formed below the thin film resonator or a high, low acoustic impedance material are alternately stacked to form the acoustic mirror.

[0183] 此外,本领域技术人员应当明白,图3至图8所示的工艺同样可以用于将钝化层以及其他层与上/下电极层进行对准,而图9所示的工艺同样可以用于将质量负载以及其他层与上/下电极层进行对准。 [0183] Furthermore, those skilled in the art will appreciate, the process shown in FIGS. 3 to 8 may be used also with a passivation layer and the upper / lower electrode layers of other alignment layer, and the same process shown in FIG. 9 It may be used to mass load and other layers and the upper / lower electrode layers are aligned.

[0184] 借助于本发明实施例的上述制造方法,制造出的谐振器包括压电层;对准结构,形成于压电层的至少一侧,其中,对准结构包括多个层,多个层的边缘彼此对准。 [0184] With the above embodiment of the manufacturing method of the present invention, the resonator comprises producing a piezoelectric layer; alignment structure formed on at least one side of the piezoelectric layer, wherein the alignment structure comprises a plurality of layers, a plurality of edge layer aligned with each other.

[0185] 其中,上述多个层包括以下至少之一:上电极和质量负载/周边质量负载;下电极和质量负载/周边质量负载;上电极和钝化层;并且,质量负载/周边质量负载整体或部分位于所述上电极/下电极远离或靠近所述压电层的一侧,所述钝化层整体或部分位于所述上电极远离所述压电层的一侧。 [0185] wherein the plurality of layers comprises at least one of the following: an upper electrode and a mass load / peripheral mass loading; lower electrode and a mass load / peripheral mass loading; upper electrode and a passivation layer; and, the mass load / peripheral mass load located in whole or in part the upper electrode / lower electrode away from or closer to the side of the piezoelectric layer, the passivation layer wholly or partially located away from the upper electrode side of the piezoelectric layer.

[0186] 综上所述,借助于本发明的上述技术方案,通过设置对准层,能够借助于去除工艺将谐振器中多个未对准的层的多余部分去除,从而使得不同层的图形能够自对准,避免了不同层的图形未对准导致的谐振器(以及由谐振器构成的滤波器等器件)性能受损的问题,能够有效提高器件的性能。 [0186] In summary, by means of the above technical solutions of the present invention, by providing the alignment layer, the removal process by means of the excess portion of the resonator in the plurality of non-aligned layer is removed, so that the pattern of the different layers can be self-aligned, avoiding (filter devices and the like constituted by the resonator) pattern impaired performance problems in different layers due to misalignment of the resonator, can effectively improve the performance of the device.

[0187] 以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。 [0187] The foregoing is only preferred embodiments of the present invention but are not intended to limit the present invention, any modifications within the spirit and principle of the present invention, the, equivalent substitutions, improvements should be included in the within the scope of the present invention.

Claims (24)

  1. 1.一种谐振器的制造方法,其特征在于,包括: 在压电层上方形成对准结构,其中,所述对准结构包括需要进行对准的多个层、以及用于将所述多个层进行对准的对准层; 利用所述对准层将所述多个层中部分或全部层的边缘部分去除,使经去除后所述多个层的边缘彼此对准。 1. A method of manufacturing a resonator, characterized by comprising: a piezoelectric layer formed over the alignment structure, wherein the alignment structure comprises a plurality of layers need to be aligned, and for the multi- an alignment layer, the alignment layer; layer using the alignment of said plurality of layers in some or all layers of the edge portion is removed, after removing the edges of the plurality of layers are aligned with each other.
  2. 2.根据权利要求1所述的制造方法,其特征在于,所述对准层为掩模层,所述对准层形成于需要对准的所述多个层上。 2. The method according to claim 1, wherein the alignment layer is a mask layer, the alignment layer is formed on the upper layer of the plurality of alignment required.
  3. 3.根据权利要求2所述的制造方法,其特征在于,利用所述对准层将所述多个层中部分或全部层的边缘部分去除包括: 对所述多个层进行蚀刻,将所述掩模层未覆盖的所述多个层中部分或全部层的边缘部分去除,其中,在进行蚀刻之前,所述多个层中的至少部分层延伸至所述掩模层之外。 The manufacturing method according to claim 2, wherein the alignment layer by using an edge portion of said plurality of layers in some or all layers removal comprising: etching the plurality of layers, The said plurality of layers of the masking layer not covered in part or all of the edge layer is partially removed, wherein, prior to etching, the plurality of layers at least partially extend outside the mask layer layer.
  4. 4.根据权利要求3所述的制造方法,其特征在于,在进行蚀刻时,对于延伸至所述掩模层之外的多个层,通过一个或多个蚀刻步骤将该多个层延伸至所述掩模层之外的部分去除。 4. The method according to claim 3, characterized in that, during etching, a plurality of layers extend to the outside of the mask layer, by one or more etching steps to extend the plurality of layers removing the portion other than the mask layer.
  5. 5.根据权利要求2所述的制造方法,其特征在于,所述对准结构中需要对准的多个层包括上电极、以及质量负载/周边质量负载,所述质量负载/周边质量负载整体或部分位于所述上电极上方或下方。 The manufacturing method according to claim 2, wherein the plurality of layers in the structure need to be aligned includes an upper electrode, and a mass load / load mass surrounding the alignment, the mass load / load mass surrounding the entire or the upper electrode portion is located above or below.
  6. 6.根据权利要求5所述的制造方法,其特征在于,进一步包括: 预先在并排设置的第一下电极和第二下电极上方形成所述压电层; 并且,在压电层上方形成对准结构包括: 在所述压电层上方对应所述第二下电极的位置处形成所述质量负载/周边质量负载和上电极层,所述上电极层位于所述质量负载/周边质量负载的上方或下方; 在所述上电极层和所述质量负载/周边质量负载上方对应于所述第一下电极和所述第二下电极的位置处分别形成掩模层; 并且,利用所述掩模层将所述多个层中部分或全部层的边缘部分去除包括: 将所述上电极层和所述质量负载/周边质量负载未被所述掩模层覆盖的部分蚀刻去除。 The manufacturing method according to claim 5, characterized in that, further comprising: pre-forming the piezoelectric layer over the first electrode disposed side by side and a second lower electrode; and, over the piezoelectric layer is formed of registration structure comprising: a corresponding piezoelectric layer above the lower electrode of the second position forming the mass load / peripheral mass loading layer and an upper electrode, said upper electrode layer on the mass load / peripheral mass load above or below; in the upper electrode layer and the mass load / peripheral mass at a position above the load corresponding to the first lower electrode and the second lower electrode respectively forming a mask layer; and, using the mask the plurality of layers of the layer of mold part or all of the removed layer edge portion comprising: said upper electrode layer and the mass load / peripheral mass load is not covered by the mask layer partially removed by etching.
  7. 7.根据权利要求5所述的制造方法,其特征在于,所述质量负载/周边质量负载的形状包括:多边形、圆形、椭圆形。 The manufacturing method according to claim 5, wherein the shape of said mass load / peripheral mass load comprises: polygon, circle, ellipse.
  8. 8.根据权利要求1-6中任一项所述的制造方法,其特征在于,进一步包括: 在将所述多个层中的部分层未被所述掩模层覆盖的部分去除之后,将所述掩模层去除;或者在多个层中所有未被所述掩模层覆盖的部分被去除之后,将所述掩模层去除。 8. A method of manufacturing according to any one of the 1-6 claims, characterized in that, further comprising: after the portion not covered with the mask layer portions of the plurality of layers layer is removed, the removing the mask layer; after all or a portion not covered by the mask layer is removed in a plurality of layers, the mask layer is removed.
  9. 9.根据权利要求2所述的制造方法,其特征在于,所述对准结构中需要对准的多个层包括上电极层和钝化层,所述钝化层整体或部分位于所述上电极层的上方。 9. The method according to claim 2, wherein the plurality of layers in the structure need to be aligned includes an upper electrode layer and the passivation layer is aligned, the passivation layer positioned on the whole or in part the upper electrode layer.
  10. 10.根据权利要求2所述的制造方法,其特征在于,所述掩模层为光刻胶层。 10. The method according to claim 2, wherein the mask layer is a photoresist layer.
  11. 11.根据权利要求1-7、9-10中任一项所述的制造方法,其特征在于,需要对准的所述多个层的至少一部分延伸至所述对准层之外的距离为0.1 μ m至10000 μ m。 11. The production method according to any of claims 1-7,9-10, characterized in that a portion of the plurality of layers need to be aligned to extend at least to a distance beyond the alignment layer is 0.1 μ m to 10000 μ m.
  12. 12.根据权利要求1-7、9-10中任一项所述的制造方法,其特征在于,需要对准的所述多个层的至少一部分延伸至所述对准层之外的距离为I μ m至100 μ m。 12. The production method according to any of claims 1-7,9-10, characterized in that a portion of the plurality of layers need to be aligned to extend at least to a distance beyond the alignment layer is I μ m to 100 μ m.
  13. 13.根据权利要求1所述的制造方法,其特征在于,所述对准层为牺牲层,并且形成于需要对准的所述多个层需要去除的部分下方。 13. A method according to claim 1, wherein the alignment layer is a sacrificial layer, and a lower portion of said plurality of aligned layers need to be removed.
  14. 14.根据权利要求13所述的制造方法,其特征在于,利用所述对准层将所述多个层中部分或全部层的边缘部分去除包括: 通过将所述对准结构中的牺牲层去除,将需要对准的多个层位于所述牺牲层上方的部分去除,其中,在进行去除之前,所述多个层中的至少一部分延伸至所述牺牲层上方。 14. A method according to claim 13, wherein the alignment layer by using an edge portion of the plurality of layers in some or all layers removal comprising: a sacrificial layer in the alignment structure removing the plurality of layers need to be aligned is located partially removed above the sacrificial layer, wherein, prior to performing the removing of the plurality of layers to at least a portion extending over the sacrificial layer.
  15. 15.一种谐振器的制造方法,其特征在于,包括: 形成对准结构,其中,所述对准结构包括需要进行对准的多个层、以及用于将所述多个层进行对准的对准层; 利用所述对准层将所述多个层中部分或全部层的边缘部分去除,使经去除后所述多个层的边缘彼此对准; 在边缘彼此对准的所述多个层上方形成压电层。 15. A method of manufacturing a resonator, characterized by comprising: an alignment structure, wherein the alignment structure comprises a plurality of layers need to be aligned, and means for aligning the plurality of layers the alignment layer; alignment layer using the plurality of layers in the edge portions of all the layers or partially removed, after removing the edges of the plurality of layers are aligned with each other; said aligned with each other at the edges a plurality of layers is formed over the piezoelectric layer.
  16. 16.根据权利要求15所述的制造方法,其特征在于,所述对准层为掩模层,所述对准层形成于需要对准的所述多个层上。 16. A method according to claim 15, wherein the alignment layer is a mask layer, the alignment layer is formed on the upper layer of the plurality of alignment required.
  17. 17.根据权利要求16所述的制造方法,其特征在于,利用所述对准层将所述多个层中部分或全部层的边缘部分去除包括: 对所述多个层进行蚀刻,将`所述掩模层未覆盖的所述多个层中部分或全部层的边缘部分去除,其中,在进行蚀刻之前,所述多个层中的至少部分层延伸至所述掩模层之外。 17. A method according to claim 16, wherein the alignment layer by using an edge portion of the plurality of layers in some or all layers removal comprising: a plurality of the layer is etched, the ` the mask layer not covered by said plurality of layers or all layers in an edge portion partially removed, wherein, prior to etching, the plurality of layers at least partially extend outside the mask layer layer.
  18. 18.根据权利要求17所述的制造方法,其特征在于,在进行蚀刻时,对于延伸至所述掩模层之外的多个层,通过一个或多个蚀刻步骤将该多个层延伸至所述掩模层之外的部分去除。 18. A method according to claim 17, characterized in that, during etching, a plurality of layers extend to the outside of the mask layer, by one or more etching steps to extend the plurality of layers removing the portion other than the mask layer.
  19. 19.根据权利要求16所述的制造方法,其特征在于,所述对准结构中需要对准的多个层包括下电极、以及质量负载/周边质量负载,所述质量负载/周边质量负载整体或部分位于所述下电极上方或下方。 19. A method according to claim 16, wherein the alignment structures need to be aligned plurality of layers comprising a lower electrode, and a mass load / peripheral mass loading, the mass load / load mass surrounding the entire or the lower electrode portion is located above or below.
  20. 20.根据权利要求19所述的制造方法,其特征在于,形成对准结构包括: 形成所述质量负载/周边质量负载和下电极层,所述下电极层位于所述质量负载/周边质量负载的上方或下方; 在所述下电极层和所述质量负载/周边质量负载上方形成掩模层; 并且,利用所述掩模层将所述多个层中部分或全部层的边缘部分去除包括: 将所述下电极层和所述质量负载/周边质量负载未被所述掩模层覆盖的部分蚀刻去除。 20. A method according to claim 19, wherein the alignment structure is formed comprising: forming the mass load / peripheral mass loading layer and lower electrode, the lower electrode layer is the mass load / peripheral mass load above or below; forming a mask layer load / load over the peripheral mass and the mass of the electrode layer next; and, using the mask layer of the plurality of layers in some or all layers of the edge portion is removed comprises : the lower electrode layer and the mass load / peripheral mass load is not covered by the partially etched mask layer is removed.
  21. 21.根据权利要求20所述的制造方法,其特征在于,所述质量负载/周边质量负载的形状包括:多边形、圆形、椭圆形。 21. A method according to claim 20, wherein said loading mass / mass load outside shape comprising: polygon, circle, ellipse.
  22. 22.根据权利要求15-21中任一项所述的制造方法,其特征在于,需要对准的所述多个层的至少一部分延伸至所述对准层之外的距离为0.1 μ m至10000 μ m。 22. The manufacturing method according to any one of claims 15-21 claims, wherein said plurality of layers need to be aligned than at least a portion extending a distance to the alignment layer is 0.1 μ m to 10000 μ m.
  23. 23.根据权利要求15-21中任一项所述的制造方法,其特征在于,需要对准的所述多个层的至少一部分延伸至所述对准层之外的距离为I μ m至100 μ m。 23. The manufacturing method according to any one of claims 15-21 claims, wherein said plurality of layers need to be aligned at least a portion extending a distance beyond the alignment layer to as I μ m to 100 μ m.
  24. 24.一种谐振器,其特征在于,包括:压电层; 对准结构,形成于所述压电层的至少一侧,其中,所述对准结构包括多个层,所述多个层的边缘彼此对准; 其中,所述多个层包括以下至少之一:上电极和质量负载/周边质量负载;下电极和质量负载/周边质量负载;上电极和钝化层; 并且,所述质量负载/周边质量负载整体或部分位于所述上电极/下电极远离或靠近所述压电层的一侧, 所述钝化层整体或部分位于所述上电极远离所述压电层的一侧。 24. A resonator comprising: a piezoelectric layer; alignment structure formed on at least one side of the piezoelectric layer, wherein said alignment structure comprises a plurality of layers, the plurality of layers an edge aligned with each other; wherein said plurality of layers comprises at least one of the following: an upper electrode and a mass load / peripheral mass loading; lower electrode and a mass load / peripheral mass loading; upper electrode and a passivation layer; and wherein mass load / load mass surrounding whole or in part positioned on one side of the electrode / lower electrode away from or closer to the piezoelectric layer, the passivation layer wholly or partially located away from the upper electrode of a piezoelectric layer side.
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