CN116232270A - High-frequency multilayer film surface acoustic wave resonator - Google Patents
High-frequency multilayer film surface acoustic wave resonator Download PDFInfo
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 230000008878 coupling Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 22
- 238000005859 coupling reaction Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 11
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a high-frequency multilayer film surface acoustic wave resonator, which comprises a piezoelectric film, a metal electrode and SiO 2 A low acoustic impedance layer, a Pt high acoustic impedance layer, and a Si substrate; wherein the metal electrode is positioned on the piezoelectric film, siO 2 The low acoustic impedance layers and the Pt high acoustic impedance layers are sequentially alternated, and a total of 5 layers are arranged below the piezoelectric film and on the substrate. The invention improves the thickness of the lithium niobate film and SiO under the multi-layer film structure composed of the piezoelectric film, the low acoustic impedance layer and the high acoustic impedance layer 2 The thickness of the low acoustic impedance layer and the thickness of the Pt high acoustic impedance layer improve the performance of the device. When λ=1.77 μm, the thickness of the lithium niobate thin film is 0.35 λ (λ is the period of the interdigital), siO 2 When the thickness of the low acoustic impedance layer is 0.2λ and the thickness of the Pt high acoustic impedance layer is 0.09 λ, the electromechanical coupling coefficient is 8.418%, q=2483, fom=209, and device performance is improved.
Description
Technical Field
The invention belongs to the technical field of resonators, and particularly relates to a high-frequency multilayer film surface acoustic wave resonator.
Background
The 5G age has come to the time of day,the requirements for data transmission are increasing, and next generation systems will need to support higher frequency spectrum bands in order to meet the network capacity requirements of wireless communications. The traditional Surface Acoustic Wave (SAW) filter technology has the characteristics of low Q value (less than 1000) and frequency drift along with the working temperature, and has difficulty in meeting the requirements of the 5G-era radio frequency terminal with more and more crowded frequency bands on the filter. BAW can achieve high frequency and stable performance, but has complex process, high manufacturing cost and low cost performance when applied to civil products. Japanese village Tian Yan gives out an I.H.P.SAW, the working frequency can reach 3.5GHz, the performance is comparable with that of a BAW filter, and the filter can be used for replacing the BAW filter in part of fields. The I.H.P.SAW has high Q value, and mainly adopts a structure of alternately stacking low acoustic impedance layers and high acoustic impedance layers, wherein the low acoustic impedance layers and the high acoustic impedance layers form a reflecting grating, so that the energy is well limited on the surface. SiO is generally selected as the material of the low acoustic impedance layer 2 This is because of SiO 2 Has positive temperature coefficient and can be used for temperature coefficient compensation. The high acoustic impedance layer is made of various materials such as AlN, siN and the like. SiO is selected for use herein 2 Pt as the low acoustic impedance layer and Pt as the high acoustic impedance layer.
CN110798167a, an acoustic wave device and a method for manufacturing the same, the acoustic wave device comprising: a POI structure comprising: the substrate is used as the lowest high sound velocity layer; the first piezoelectric layer is positioned above the material layers with the high sound velocity layers and the low sound velocity layers alternately, and the surface low sound velocity layers are adjacent to the first piezoelectric layer; the bulk wave sound propagated by the high sound velocity layer is higher than the bulk wave sound velocity of the first piezoelectric layer, and the bulk wave sound propagated by the low sound velocity layer is lower than the bulk wave sound velocity of the first piezoelectric layer; the POI structure comprises at least two areas, wherein the two areas are a first area and a second area respectively, and a first device resonating in a first vibration mode is manufactured in the first area; a second device is fabricated in the second region having a second vibrational mode resonance. Coupling interference among devices in different areas can be reduced, and suppression and isolation of a filter or a duplexer are improved; the size of the device can be reduced, the cost is reduced, and the requirement of communication miniaturization is met.
The CN110798167a patent utilizes POI structure and combines bulk wave structure, the process of FBAR device is more complex than that of SAW device, and the cost is also high, the above patent is equivalent to making FBAR device on left, and SAW device on right, and first, the process of mass production of FBAR is not mature, and the cost is also high. Now, a SAW device is added beside the wafer, which increases the process difficulty. The invention improves the device based on the saw vibration mode, the performance of the device can exceed that of some FBAR devices, and then a large number of bulk wave devices can be replaced in the low-end market, so that the cost is reduced.
Disclosure of Invention
The present invention is directed to solving the above problems of the prior art. A high-frequency multilayer film surface acoustic wave resonator is provided. The technical scheme of the invention is as follows:
a high frequency multilayer film surface acoustic wave resonator, comprising: piezoelectric thin film, metal electrode, siO 2 A low acoustic impedance layer, a Pt high acoustic impedance layer, and a Si substrate; wherein the Si substrate is positioned at the bottommost layer, a reflecting layer is arranged on the Si substrate, and the reflecting layer consists of two layers of Pt high acoustic impedance layers and three layers of SiO 2 A low acoustic impedance layer for confining wave energy to a surface, said three layers of SiO 2 The low acoustic impedance layer interval sets up two-layer Pt high acoustic impedance layer, be provided with piezoelectric film on the low acoustic impedance layer, be provided with metal electrode on the piezoelectric film, piezoelectric film layer mainly plays the effect of two aspects in the work of surface acoustic wave device: firstly, mutual coupling of electric energy and mechanical energy is completed through positive piezoelectric effect and inverse piezoelectric effect, and mutual conversion between electric signals and acoustic surface wave signals is realized; secondly, carrying the propagation of acoustic surface wave, wherein the metal electrode is used for forming an interdigital transducer (interdigital transducers, IDT) and a reflecting grating, the interdigital transducer (IDT) is mainly used for exciting and detecting the acoustic surface wave on the surface of the piezoelectric substrate, the filtering function is realized through the frequency response and the impulse response of the interdigital transducer, the reflecting grating is added at the two ends of the interdigital transducer for reflecting the acoustic wave, the insertion loss of the device is reduced, and the silicon dioxide (SiO) 2 The low acoustic impedance layer and the Pt high acoustic impedance layer form a reflecting grating, so that energy is well limited on the surface. SiO (SiO) 2 The low acoustic impedance layer also acts as a temperatureThe compensation layer reduces the temperature coefficient of the piezoelectric layer, thereby improving the temperature stability of the device;
further, the piezoelectric film is made of lithium niobate, the tangential direction of the lithium niobate is 15 degrees Y-X, and the film thickness is 0.35 lambda; the LN-cut structure with the angle of 15 degrees Y-X is adopted, love wave is excited, the velocity of the Love wave is higher than that of Rayleigh wave, high frequency is achieved, and the electromechanical coupling coefficient can be improved.
Further, the metal electrode is made of copper, the ratio of the width of the metal electrode to the metal interdigital period is 0.25, and the ratio of the thickness of the metal electrode to the metal interdigital period is 0.06.
Further, the determination of the film thickness of the piezoelectric thin film layer, the low acoustic impedance layer and the high acoustic impedance layer requires analysis of the influence of the film thickness on various parameters, wherein the resonator electromechanical coupling coefficient k 2 Is an efficiency parameter for measuring the mutual conversion of the mechanical energy and the electric energy of the device;
FOM＝κ 2 *Q (3)
f in r For resonance frequency f a At antiresonant frequency, z φ The impedance phase is represented, the quality factor Q is the most direct factor for measuring the performance of the filter, and the larger the Q value is, the better the device performance is; FOM is a comprehensive index of the resonator, FOM values of SAW and TC-SAW are less than 100, and FOM values of I.H.P.SAW and FBAR are less than or equal to 200.
Further, the thickness of the lithium niobate thin film is 0.35 lambda, siO 2 The thickness of the low acoustic impedance layer is 0.2λ, and the thickness of the Pt high acoustic impedance layer is 0.09 λ; finally designing a resonator, wherein lambda=1.77 μm, to obtain a resonant frequency of 3495MHz, an antiresonant frequency of 3623MHz and an electromechanical coupling coefficient kappa 2 ＝8.418％，Q＝2483，FOM＝209。
The invention has the advantages and beneficial effects as follows:
the traditional surface acoustic wave resonator mainly comprises a piezoelectric substrate and a metal electrode, wherein the working frequency of the piezoelectric substrate is generally below 2.5GHz, and the bandwidth, the electromechanical coupling coefficient and the like are limited. The invention scans SiO through parameterization 2 Film thickness of low acoustic impedance layer, film thickness of Pt high acoustic impedance layer, and LiNbO 3 Piezoelectric film thickness, the resonator performance was analyzed to determine the final film thickness of each layer. SiO is adopted 2 As a low acoustic impedance layer due to SiO 2 The film can be used as a temperature compensation layer, and the sound velocity of the film decreases with the increase of the film thickness. Pt is selected as the high acoustic impedance layer and SiO 2 The reflection layer structure is formed, so that high frequency is realized, and various performances of the resonator are improved. The total number of layers of the acoustic mirror is selected to be 5, because researches show that the total number of layers of at least 5 layers can sufficiently inhibit a large amount of wave radiation to the substrate, so that the Q value is improved, and the energy loss is reduced. Meanwhile, the invention adopts the Cu electrode which is arranged on the 15-degree Y-X LN piezoelectric layer to excite SH wave, and a layer of low sound velocity material on the surface can reduce propagation loss. It has been found that Al can be used to replace low acoustic velocity material to excite love wave mode, but the required film thickness wavelength ratio is as high as 12%, and the device is difficult to manufacture and mass produce. However, if Cu is substituted, the required thickness is about 0.4 times that of Al, and the conductivity of Cu is better than that of Al, so that the thinner film does not increase the ohmic loss of the device, which is advantageous for the process implementation and mass production of the device.
Drawings
Fig. 1 is a schematic cross-sectional structure of a high-frequency multilayer film surface acoustic wave resonator according to a preferred embodiment of the present invention.
FIG. 2 shows the electromechanical coupling coefficient (κ) of a high-frequency multilayer-film SAW resonator as the LN piezoelectric film layer thickness increases 2 ) And a quality factor (Q) graph. Wherein SiO is 2 The thickness of the low acoustic impedance layer was 0.25λ (λ is the interdigital period), and the thickness of the Pt high acoustic impedance layer was 0.09 λ.
FIG. 3 shows the high frequency multilayer film SAW resonator with SiO 2 The thickness of the low acoustic impedance layer increases and its electromechanical coupling coefficient (κ) 2 ) And a quality factor (Q) graph. Wherein the thickness of the piezoelectric film is 0.25λ,the thickness of the Pt high acoustic impedance layer was 0.09 lambda.
FIG. 4 shows the electromechanical coupling coefficient (κ) of a high-frequency multilayer film SAW resonator with increasing Pt high acoustic impedance layer thickness 2 ) And a quality factor (Q) graph. Wherein the thickness of the piezoelectric film is 0.25λ, siO 2 The thickness of the low acoustic impedance layer was 0.25λ.
FIG. 5 is a graph of FOM for a high frequency multilayer film SAW resonator as LN piezoelectric film layer thickness increases.
FIG. 6 shows the high frequency multilayer film SAW resonator with SiO 2 The thickness of the low acoustic impedance layer increases and the FOM profile thereof.
Fig. 7 is a graph of FOM of a high frequency multilayer film saw resonator with increasing Pt high acoustic impedance layer thickness.
FIG. 8 is an admittance diagram of a high-frequency multilayer film SAW resonator, wherein λ=1.77 μm, resulting in a resonant frequency of 3495MHz, an antiresonant frequency of 3623MHz, an electromechanical coupling coefficient equal to 8.418%, Q=2483, FOM=209
In fig. 1: 1. a metal electrode; 2. a piezoelectric film; 3. SiO (SiO) 2 A low acoustic impedance layer; 4. a Pt high acoustic impedance layer; 5. si substrate
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and specifically described below with reference to the drawings in the embodiments of the present invention. The described embodiments are only a few embodiments of the present invention.
The technical scheme for solving the technical problems is as follows:
a high frequency multilayer film surface acoustic wave resonator, comprising: piezoelectric thin film, metal electrode, siO 2 A low acoustic impedance layer, a Pt high acoustic impedance layer, and a Si substrate.
Further, the piezoelectric film is made of lithium niobate, the tangential direction of the lithium niobate is 15 DEG Y-X, and the film thickness is 0.35 lambda. The tangential direction of lithium niobate materials used in the conventional surface acoustic wave filter is 0-64 DEG Y-X, and Rayleigh waves are mostly utilized. Research shows that the bandwidth of the low-loss surface acoustic wave device is greatly influenced by the electromechanical coupling factor kappa 2 Depending on the piezoelectric substrate material and its takingTo (c). The research adopts a 15-degree Y-X LN cut structure, excites Love waves, has a speed higher than Rayleigh waves, achieves high frequency, and improves electromechanical coupling coefficients.
Further, the metal electrode is positioned on the piezoelectric film, and the material is copper. The ratio of the width of the metal electrode to the metal interdigital period was 0.25, and the ratio of the thickness of the metal electrode to the metal interdigital period was 0.06. The 15 DEG Y-X cut LN can effectively inhibit the spurious resonance caused by Rayleigh waves, and the appropriate thickness of the Cu electrode can further inhibit the spurious response of Rayleigh waves Li Mo. Since Cu has a higher conductivity than Al, the ohmic loss of the grating electrode does not increase significantly when the electrode thickness is reduced. The effect on the Q value is small.
Further, siO 2 The low acoustic impedance layer and the Pt high acoustic impedance layer are sequentially and alternately arranged under the piezoelectric film, and the total number of layers is 5.
Determining the film thickness of each thin film requires analysis of the effect of film thickness on various parameters, wherein the resonator electromechanical coupling coefficient κ 2 Is an efficiency parameter for measuring the mutual conversion of the mechanical energy and the electric energy of the device.
FOM＝κ 2 *Q (3)
F in r For resonance frequency f a Is the antiresonant frequency. The quality factor Q is the most direct factor for measuring the performance of the filter, and the larger the Q value is, the better the device performance is. FOM is a comprehensive index of the resonator, the FOM values of SAW and TC-SAW are generally less than 100, and the FOM values of the I.H.P.SAW and the FBAR are both less than or equal to 200. Resonators with FOM values greater than 200 are very rare.
Piezoelectric materials having large electromechanical coupling coefficients need to be selected in the fabrication of surface acoustic wave devices with large bandwidths and low power consumption. But simultaneously, the Q value and the electromechanical coupling coefficient are inversely proportional, and the balance of the Q value and the electromechanical coupling coefficient is required to be paid attention to, so that the good performance of the device is ensured, and the FOM parameter is very important.
The metal Pt acts as a high-impedance layer, which can significantly improve the reflectivity, and the wave energy is well confined near the top surface, with little visible leakage to the substrate. Thus allowing for a significant improvement in the performance of the saw device.
According to the simulation data obtained in FIGS. 2-7, the thickness of the lithium niobate thin film was finally determined to be 0.35λ, siO 2 The thickness of the low acoustic impedance layer was 0.2λ, and the thickness of the Pt high acoustic impedance layer was 0.09 λ. Finally designing a resonator, wherein lambda=1.77 μm, to obtain a resonant frequency of 3495MHz, an antiresonant frequency of 3623MHz and an electromechanical coupling coefficient kappa 2 ＝8.418％，Q＝2483，FOM＝209。
The system, apparatus, module or unit set forth in the above embodiments may be implemented in particular by a computer chip or entity, or by a product having a certain function.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
The above examples should be understood as illustrative only and not limiting the scope of the invention. Various changes and modifications to the present invention may be made by one skilled in the art after reading the teachings herein, and such equivalent changes and modifications are intended to fall within the scope of the invention as defined in the appended claims.
Claims (5)
1. A high frequency multilayer film surface acoustic wave resonator, comprising: piezoelectric thin film, metal electrode, siO 2 A low acoustic impedance layer, a Pt high acoustic impedance layer, and a Si substrate; wherein said at least one ofThe Si substrate is positioned at the bottommost layer, a reflecting layer is arranged on the Si substrate, and the reflecting layer consists of two layers of Pt high acoustic impedance layers and three layers of SiO 2 A low acoustic impedance layer for confining wave energy to a surface, said three layers of SiO 2 The low acoustic impedance layer interval sets up two-layer Pt high acoustic impedance layer, be provided with piezoelectric film on the low acoustic impedance layer, be provided with metal electrode on the piezoelectric film, piezoelectric film layer mainly plays the effect of two aspects in the work of surface acoustic wave device: firstly, mutual coupling of electric energy and mechanical energy is completed through positive piezoelectric effect and inverse piezoelectric effect, and mutual conversion between electric signals and acoustic surface wave signals is realized; the metal electrode forms an interdigital transducer IDT and a reflecting grating, the interdigital transducer IDT is mainly used for exciting and detecting the surface acoustic wave on the surface of the piezoelectric substrate, the filtering function is realized through the frequency response and the impulse response of the interdigital transducer IDT, the reflecting grating is added at two ends of the interdigital transducer for reflecting the acoustic wave, the insertion loss of the device is reduced, and the substrate is made of SiO 2 The low acoustic impedance layer and the Pt high acoustic impedance layer form a reflection grid, so that energy is limited on the surface; siO (SiO) 2 The low acoustic impedance layer also acts as a temperature compensation layer, lowering the temperature coefficient of the piezoelectric layer, thereby improving the device temperature stability.
2. The high-frequency multilayer film surface acoustic wave resonator according to claim 1, wherein the piezoelectric thin film is made of lithium niobate, has a tangential direction of 15 ° Y-X, and has a film thickness of 0.35 λ; the LN-cut structure with the angle of 15 degrees Y-X is adopted, love wave is excited, the velocity of the Love wave is higher than that of Rayleigh wave, high frequency is achieved, and the electromechanical coupling coefficient can be improved.
3. The high-frequency multilayer film surface acoustic wave resonator according to claim 1, wherein the metal electrode is made of copper, the ratio of the width of the metal electrode to the period of the metal interdigital is 0.25, and the ratio of the thickness of the metal electrode to the period of the metal interdigital is 0.06.
4. A high frequency multilayer film surface acoustic wave resonator as defined in claim 1A vibrator is characterized in that the film thickness of the piezoelectric thin film layer, the low acoustic impedance layer and the high acoustic impedance layer needs to be analyzed to influence the film thickness on various parameters, wherein the electromechanical coupling coefficient kappa of the resonator 2 Is an efficiency parameter for measuring the mutual conversion of the mechanical energy and the electric energy of the device;
FOM＝κ 2 *Q (3)
f in r For resonance frequency f a At antiresonant frequency, z φ The impedance phase is represented, the quality factor Q is the most direct factor for measuring the performance of the filter, and the larger the Q value is, the better the device performance is; FOM is a comprehensive index of the resonator, FOM values of SAW and TC-SAW are less than 100, and FOM values of I.H.P.SAW and FBAR are less than or equal to 200.
5. A high-frequency multilayer film surface acoustic wave resonator according to claim 1, characterized in that,
the thickness of the lithium niobate thin film is 0.35 lambda, siO 2 The thickness of the low acoustic impedance layer is 0.2λ, and the thickness of the Pt high acoustic impedance layer is 0.09 λ; finally designing a resonator, wherein lambda=1.77 μm, to obtain a resonant frequency of 3495MHz, an antiresonant frequency of 3623MHz and an electromechanical coupling coefficient kappa 2 ＝8.418％，Q＝2483，FOM＝209。
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| CN116707488A (en) * | 2023-08-07 | 2023-09-05 | 荣耀终端有限公司 | Filter, preparation method thereof, radio frequency module and electronic equipment |
| CN116707488B (en) * | 2023-08-07 | 2024-03-29 | 荣耀终端有限公司 | Filter, preparation method thereof, radio frequency module and electronic equipment |
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