CN116886066A - Temperature compensation type transverse excitation bulk acoustic wave resonator - Google Patents
Temperature compensation type transverse excitation bulk acoustic wave resonator Download PDFInfo
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- CN116886066A CN116886066A CN202310730690.5A CN202310730690A CN116886066A CN 116886066 A CN116886066 A CN 116886066A CN 202310730690 A CN202310730690 A CN 202310730690A CN 116886066 A CN116886066 A CN 116886066A
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- temperature
- bulk acoustic
- thin plate
- compensated
- piezoelectric thin
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- 230000005284 excitation Effects 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910020177 SiOF Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- OJCDKHXKHLJDOT-UHFFFAOYSA-N fluoro hypofluorite;silicon Chemical compound [Si].FOF OJCDKHXKHLJDOT-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 14
- 238000010168 coupling process Methods 0.000 abstract description 14
- 238000005859 coupling reaction Methods 0.000 abstract description 14
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 235000019687 Lamb Nutrition 0.000 description 17
- 230000001902 propagating effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to the field of piezoelectric acoustic wave devices, and discloses a temperature compensation type transverse excitation bulk acoustic wave resonator which comprises an interdigital transducer, a temperature compensation layer, a piezoelectric thin plate and a supporting substrate, wherein the supporting substrate is , a cavity is formed at the bottom of the supporting substrate, the piezoelectric thin plate is arranged on the supporting substrate, the temperature compensation layer is arranged on the piezoelectric thin plate, and the interdigital transducer is arranged on the upper surface of the piezoelectric thin plate. The invention has the beneficial effects that the sandwich structure for temperature compensation XBAR (TC-XBAR) can obviously improve and enhance the temperature stability of the device, and can obtain better frequency temperature coefficient under the condition of taking other performances (high frequency and high electromechanical coupling coefficient) into consideration.
Description
Technical Field
The invention relates to the field of piezoelectric acoustic wave devices, in particular to a temperature compensation type transverse excitation bulk acoustic wave resonator.
Background
Wireless communication technology has evolved rapidly over the past decades, from second generation mobile communication technology (2G) to fifth generation (5G) and future generation mobile communication technology (6G), and with the rapid development of mobile communication technology, the demand for Radio Frequency (RF) front end modules has also increased. In the radio frequency front end module, the filter is one of the most important components. With the improvement of the data transmission capacity of 5G and 6G communication, higher requirements are also put forward on the performance of the filter, such as requirements of high frequency, large bandwidth, low loss, high temperature stability and the like.
Conventional piezoelectric acoustic wave filters, including surface acoustic wave filters (SAW) and film bulk acoustic wave Filters (FBAR), have been the dominant commercial filters in radio frequency front ends in the past 30 years due to their small size, low cost and excellent performance. In the early stage, the surface acoustic wave filter occupies the main stream of the radio frequency front end filter and the duplexer for wireless communication. However, the operating frequency of SAW is typically below 3.5GHz, limited by the substrate surface wave speed and electrode lithography accuracy. The FBAR filter uses thickness directional longitudinal waves with a high speed of sound. Therefore, the FBAR filter has an advantage in operating frequency. However, as the frequency increases, the acoustic and ohmic losses of the FBAR increase dramatically with increasing operating frequency, resulting in increased filter insertion loss.
In recent years, a transverse excited bulk wave resonator (XBAR) based on a Lithium Niobate (LN) film has been proposed, and since it is suitable for high-frequency devices and excellent in addition to the conventional resonator electromechanical coupling coefficient and quality factor (high-frequency, high electromechanical coupling coefficient is an important performance parameter of the resonator), the frequency Temperature Coefficient (TCF) is also a key performance index of the resonator. However, the XBAR based on lithium niobate thin films reported in the literature has a large electromechanical coupling coefficient (25%) and a high frequency (4.8 GHz), and the temperature coefficient TCF of frequency is poor, usually lower than-90 ppm/°c. The origin of TCF is from the temperature of the modal acoustic phase velocityDegree of dependence, which is affected by the temperature behavior of the elasticity, piezoelectric and dielectric properties of the material itself. To improve the temperature stability of XBAR, conventional SAW devices can incorporate CF silicon dioxide (SiO) on or under the LN film 2 ) A temperature compensating material. However, unlike the conventional surface acoustic wave, for the XBAR based on the lithium niobate thin film, the addition of the temperature compensation layer has a great influence on the performance thereof, and not only the spurious mode is introduced, but also the key performance is deteriorated. .
Disclosure of Invention
The invention aims to overcome the problems in the prior art and provide a temperature compensation type transverse excitation bulk acoustic wave resonator.
The invention relates to a temperature compensation type transverse excitation bulk acoustic wave resonator which comprises a temperature compensation layer, an interdigital transducer, a piezoelectric thin plate and a supporting substrate, wherein the supporting substrate is , a cavity is formed at the bottom of the supporting substrate, the piezoelectric thin plate is arranged on the supporting substrate, the temperature compensation layer is arranged on the piezoelectric thin plate, and the interdigital transducer is arranged on the upper surface of the piezoelectric thin plate.
Preferably, the temperature compensation layer is arranged above the piezoelectric thin plate, the interdigital transducer is wrapped in the temperature compensation layer, and preferably, the thickness of the temperature compensation layer is 0.008 lambda less than or equal to h SiO2 Less than or equal to 0.13 lambda, lambda being the wavelength of the sound wave.
Preferably, the interdigital transducer electrode comprises a plurality of first electrode fingers and a plurality of second electrode fingers which are inserted in a staggered manner, the shapes of the first electrode fingers and the second electrode fingers are the same, and a first bus bar and a second bus bar which are opposite to each other in the extending direction of the first electrode fingers and the second electrode fingers are respectively positioned at two sides of the piezoelectric layer, and the first bus bar and the second bus bar are respectively connected with the signal ends through connecting plates.
Preferably, the Euler angle θ of the piezoelectric sheet satisfies 0.ltoreq.θ.ltoreq.30° (0 °, θ,0 °).
Preferably, the thickness of the piezoelectric thin plate is 0.03λ.ltoreq.h LN ≤0.1λ。
Preferably, the interdigital transducer is composed of electrodes which are arranged periodically, and the materials of the electrodes are one or a combination of more of aluminum Al, copper Cu or aluminum copper alloy.
Preferably, the material of the piezoelectric thin plate is lithium niobate LiNbO 3 Lithium tantalate LiTaO 3 One or a combination of several of aluminum nitride AlN or aluminum nitride/scandium-doped aluminum nitride AlN/ScAlN laminates.
Preferably, the material of the temperature compensation layer is silicon dioxide SiO 2 Silicon nitride Si 3 N 4 Or silicon oxyfluoride SiOF.
Preferably, the material of the temperature compensation layer is silicon dioxide SiO 2 The thickness of the temperature compensation layer is 0.008 lambda less than or equal to h SiO2 ≤0.13λ。
Preferably, a cavity is arranged below the sandwich structure, and the cavity is positioned below the lower temperature compensation layer.
Through the technical scheme, the temperature compensation type transverse excitation bulk acoustic wave resonator is used for a sandwich structure of temperature compensation XBAR (TC-XBAR), can obviously improve and enhance the temperature stability of the device, and can obtain better TCF under the condition of considering other performances (high frequency and high electromechanical coupling coefficient) due to the performance.
Drawings
FIG. 1 is a schematic diagram of the structure of a laterally excited bulk acoustic wave resonator of the present invention;
FIG. 2 is a schematic diagram of the structure of a transverse excited bulk acoustic wave resonator of the present invention for one cycle;
FIG. 3 is a graph showing the temperature coefficient of frequency of lamb waves propagating on the piezoelectric substrate according to the first embodiment of the present invention as a function of the temperature compensation layer thickness when the Euler angle is set to (0 °, -10 °,0 °);
FIG. 4 is a graph of the frequency of the lamb wave propagating on the piezoelectric substrate of the first embodiment of the present invention as a function of temperature compensation layer thickness when the Euler angle is set to (0 °, -10 °,0 °);
FIG. 5 is a graph showing the variation of the electromechanical coupling coefficient of the lamb wave propagating on the piezoelectric substrate according to the first embodiment of the present invention with the temperature compensation layer thickness when the Euler angle is set to (0 °, -10 °,0 °);
FIG. 6 is a graph of temperature coefficient of frequency versus temperature compensation layer thickness for lamb waves propagating on the piezoelectric substrate of embodiment two of the present invention when the Euler angle is set to (0, -10, 0);
FIG. 7 is a graph of the frequency of the lamb wave propagating on the piezoelectric substrate of the second embodiment of the present invention as a function of temperature compensated layer thickness when the Euler angle is set to (0 °, -10 °,0 °);
fig. 8 is a graph showing the variation of the electromechanical coupling coefficient of the lamb wave propagating on the piezoelectric substrate of the second embodiment of the present invention with the temperature compensation layer thickness when the euler angle is set to (0 °, -10 °,0 °).
Description of the reference numerals
1. Temperature compensation layer 2, interdigital transducer 3, and piezoelectric sheet
4. A support substrate 5, a cavity.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and detailed description. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.
In the present invention, unless otherwise indicated, terms of orientation such as "upper and lower" are used to refer generally to upper and lower as shown in the drawings.
According to the invention, as shown in fig. 1 to 2, a temperature compensation type transverse excitation bulk acoustic wave resonator is provided, and comprises a temperature compensation layer 1, an interdigital transducer 2, a piezoelectric thin plate 3 and a supporting substrate 4, wherein the supporting substrate 4 is of a type, a cavity 5 is formed at the bottom of the supporting substrate 4, the cavity 5 can enable the invention to work more stably when in use, the piezoelectric thin plate 3 is arranged on the supporting substrate 4, the temperature compensation layer 1 is arranged on the piezoelectric thin plate 3, the interdigital transducer 2 is arranged on the upper surface of the piezoelectric thin plate 3, and the temperature compensation layer 1 can inhibit transverse mode excitation.
Preferably, the temperatureThe temperature compensation layer 1 is arranged above the piezoelectric thin plate 3, the interdigital transducer 2 is wrapped in the temperature compensation layer 1, and the thickness of the temperature compensation layer (1) is 0.008 lambda less than or equal to h SiO2 Less than or equal to 0.13 lambda to ensure that the obtained resonant frequency can be more than 2GHz and the electromechanical coupling coefficient K 2 Can be maintained above 10%, and the temperature coefficient of the frequency can reach-20 ppm/DEG C.
Preferably, the Euler angle θ of the piezoelectric sheet 3 satisfies 0.ltoreq.θ.ltoreq.30° (0 °, θ,0 °). More precisely, the interdigital transducer 2 can exert an electrical excitation on the piezoelectric sheet 3, so that the piezoelectric sheet 3 releases an acoustic excitation. Preferably, the number of the electrodes is more than two, and each electrode interval is set to 3 micrometers. The material of the electrode may be aluminum. Preferably, the thickness of the piezoelectric sheet 3 is set to 0.03λ.ltoreq.h LN Less than or equal to 0.1 lambda. Preferably, the material of the piezoelectric thin plate 3 is lithium niobate, lithium tantalate, aluminum nitride or scandium-doped aluminum nitride. Preferably, the material of the temperature compensation layer 1 is silicon dioxide. Preferably, the thickness of the silicon dioxide is set to be 0.008 lambda.ltoreq.h SiO2 ≤0.13λ。
As shown in fig. 3, the euler angle of the lithium niobate piezoelectric thin plate is set to (0 °, -10 °,0 °), and the thickness of the lithium niobate is set to 0.03λ, and as the thickness of the silicon dioxide layer increases, the temperature coefficient of the frequency of the first-order antisymmetric mode lamb wave propagating on the present invention increases, which means that the temperature stability of the device is better.
As shown in fig. 4, the euler angle of the lithium niobate piezoelectric thin plate was set to (0 °, -10 °,0 °), and the thickness of the lithium niobate was set to 0.03λ, and the frequency of the first-order antisymmetric mode lamb wave propagating on the present invention was plotted as a function of the thickness of the silicon dioxide, and as the thickness of the silicon dioxide layer was increased, the resonance frequency was gradually decreased, but still maintained at 3GHz or more, as seen from fig. 4.
As shown in fig. 5, the euler angle of the lithium niobate piezoelectric thin plate was set to (0 °, -10 °,0 °), and the thickness of lithium niobate was set to 0.03λ, the first order opposition propagated on the present inventionElectromechanical coupling coefficient (K) of the mode lamb wave 2 ) As can be seen from fig. 5, the electromechanical coupling coefficient tends to decrease with increasing thickness of the silicon dioxide layer, but still remains at 15% or more.
Embodiment one:
as shown in fig. 3 to 5, in the present embodiment, the transverse excited bulk acoustic wave resonator uses a first-order antisymmetric lamb wave, preferably a three-layer structure, and the euler angle of the lithium niobate piezoelectric sheet takes the value: α=0°, β= -10±10°, γ=0°. When the Euler angle of the lithium niobate thin plate is set to be (0 DEG, -10+/-10 DEG, 0 DEG), the first-order antisymmetric lamb wave with high electromechanical coupling coefficient and high frequency can be excited, the obtained curve of the temperature coefficient of frequency changing with the thickness of the silicon dioxide is shown in figure 3, and the abscissa is the thickness of each layer of silicon dioxide. The bandwidth and the working frequency of the transverse excitation bulk acoustic wave resonator are ensured while the temperature compensation is optimized.
Embodiment two:
as shown in fig. 6 to 8, in the present embodiment, the transverse excited bulk acoustic wave resonator uses a first-order antisymmetric lamb wave, preferably a two-layer structure, and the euler angle of the lithium niobate piezoelectric sheet takes the value: α=0°, β= -10±10°, γ=0°. When the Euler angle of the lithium niobate piezoelectric thin plate is set to be (0 degree, -10+/-10 degrees and 0 degree), the first-order antisymmetric lamb wave with high electromechanical coupling coefficient and high frequency can be excited, the bandwidth and the working frequency of the transverse excitation bulk acoustic wave resonator are ensured, and meanwhile, better temperature compensation can be achieved, as shown in figure 6. Therefore, when the transverse excitation bulk acoustic wave resonator utilizes the first-order antisymmetric lamb wave mode, the silicon dioxide thickness is preferably 0.025 lambda, so that the first-order antisymmetric lamb wave mode with excellent electromechanical coupling coefficient can be excited, and the working frequency and the bandwidth of the transverse excitation bulk acoustic wave resonator are further improved.
In summary, the temperature compensation type transverse excitation bulk acoustic wave resonator has the advantages of low cost, convenient processing, greatly reduced production cost, improved product yield, capability of inhibiting transverse mode excitation, capability of optimizing the orientation of the piezoelectric thin plate by using a rotary Euler angle, capability of adjusting sound field distribution, capability of obtaining excellent lamb waves, and capability of obtaining a first-order antisymmetric mode with high electromechanical coupling coefficient and high frequency, and is very suitable for high-frequency and large-bandwidth lamb wave devices, and has great application prospect.
The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited thereto. Within the scope of the technical idea of the invention, a plurality of simple variants of the technical proposal of the invention can be carried out, comprising that each specific technical feature is combined in any suitable way, and in order to avoid unnecessary repetition, the invention does not need to be additionally described for various possible combinations. Such simple variations and combinations are likewise to be regarded as being within the scope of the present disclosure.
Claims (10)
1. The utility model provides a temperature compensation formula transverse excitation bulk acoustic wave resonator, its characterized in that includes temperature compensation layer (1), interdigital transducer (2), piezoelectric thin plate (3) and supporting substrate (4), supporting substrate (4) are "", supporting substrate (4) bottom forms cavity (5), be provided with piezoelectric thin plate (3) on supporting substrate (4), be provided with on piezoelectric thin plate (3) temperature compensation layer (1), piezoelectric thin plate (3) upper surface is provided with interdigital transducer (2).
2. Temperature-compensated laterally excited bulk acoustic resonator according to claim 1, characterized in that the temperature-compensation layer (1) is arranged above the piezoelectric thin plate (3), the interdigital transducer (2) being wrapped in the temperature-compensation layer (1), preferably the temperature-compensation layer (1) has a thickness of 0.008 λ +.ltoreq.h SiO2 Less than or equal to 0.13 lambda, lambda being the wavelength of the sound wave.
3. The temperature-compensated laterally excited bulk acoustic wave resonator according to claim 1, wherein the interdigital transducer electrode comprises a plurality of first electrode fingers and a plurality of second electrode fingers which are inserted in a staggered manner, the first electrode fingers and the second electrode fingers have the same shape, and a first bus bar and a second bus bar which are opposite to each other in the extending directions of the first electrode fingers and the second electrode fingers, the first bus bar and the second bus bar being respectively located at both sides of the piezoelectric layer, and the first bus bar and the second bus bar being respectively connected to signal terminals through connection plates.
4. Temperature-compensated laterally excited bulk acoustic resonator according to claim 1, characterized in that the euler angle θ of the piezoelectric sheet (3) satisfies 0 ° - θ -30 ° (0 °, θ,0 °).
5. Temperature-compensated laterally excited bulk acoustic resonator according to claim 1, characterized in that the thickness of the piezoelectric thin plate (3) is 0.03λ+.h LN ≤0.1λ。
6. A temperature-compensated laterally excited bulk acoustic resonator according to claim 3, characterized in that the interdigital transducer (2) consists of electrodes arranged periodically, the material of the electrodes being one or a combination of several of aluminium Al, copper Cu or aluminium copper alloy.
7. Temperature-compensated laterally excited bulk acoustic resonator according to claim 1, characterized in that the material of the piezoelectric thin plate (3) is lithium niobate LiNbO 3 Lithium tantalate LiTaO 3 One or a combination of several of aluminum nitride AlN or aluminum nitride/scandium-doped aluminum nitride AlN/ScAlN laminates.
8. Temperature-compensated laterally excited bulk acoustic resonator according to claim 1, characterized in that the material of the temperature-compensated layer (1) is silicon dioxide SiO 2 Silicon nitride Si 3 N 4 Or silicon oxyfluoride SiOF.
9. Temperature-compensated laterally excited bulk acoustic resonator according to claim 1, characterized in that the material of the temperature-compensated layer (1) is silicon dioxide SiO 2 The thickness of the temperature compensation layer (1) is 0.008 lambda less than or equal to h SiO2 ≤0.13λ。
10. The temperature-compensated laterally excited bulk acoustic resonator of claim 1 wherein a cavity is provided below the sandwich structure, the cavity being located below the underlying temperature compensation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202310730690.5A CN116886066A (en) | 2023-06-20 | 2023-06-20 | Temperature compensation type transverse excitation bulk acoustic wave resonator |
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| CN202310730690.5A CN116886066A (en) | 2023-06-20 | 2023-06-20 | Temperature compensation type transverse excitation bulk acoustic wave resonator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240248A (en) * | 2023-11-13 | 2023-12-15 | 深圳新声半导体有限公司 | Surface acoustic wave resonator and MEMS device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240248A (en) * | 2023-11-13 | 2023-12-15 | 深圳新声半导体有限公司 | Surface acoustic wave resonator and MEMS device |
| CN117240248B (en) * | 2023-11-13 | 2024-03-29 | 深圳新声半导体有限公司 | Surface acoustic wave resonator and MEMS device |
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