CN113708739A - Acoustic wave filter - Google Patents
Acoustic wave filter Download PDFInfo
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- CN113708739A CN113708739A CN202111000441.8A CN202111000441A CN113708739A CN 113708739 A CN113708739 A CN 113708739A CN 202111000441 A CN202111000441 A CN 202111000441A CN 113708739 A CN113708739 A CN 113708739A
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- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000010408 film Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 22
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 13
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 18
- 230000004044 response Effects 0.000 description 14
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 11
- 229910052744 lithium Inorganic materials 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 239000000470 constituent Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
Abstract
The acoustic wave filter disclosed by the embodiment of the application comprises a plurality of resonators, wherein the resonators comprise a plurality of series arm resonators and a plurality of parallel arm resonators, and an included angle between the series arm resonators and the parallel arm resonators is within a preset included angle interval; each resonator includes: the piezoelectric element comprises a support substrate, a piezoelectric film and a plurality of electrodes, wherein the piezoelectric film is arranged on the support substrate, and the plurality of electrodes are arranged on the piezoelectric film. Based on this application embodiment through with the contained angle setting between series arm syntonizer and the parallel arm syntonizer predetermine the contained angle interval, can restrain the rayleigh clutter, improve the comprehensive properties of wave filter.
Description
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to an acoustic wave filter.
Background
With the progress of the material preparation process, the acoustic wave filter based on the piezoelectric thin film-supporting substrate structure can exhibit extremely excellent comprehensive performance compared to the conventional acoustic wave filter based on the piezoelectric material or the piezoelectric thick film-supporting substrate structure. The filter based on the lithium tantalate-silicon dioxide-silicon three-layer structure is not suitable for application scenes with high frequency and large bandwidth, and the filter based on the lithium niobate-silicon carbide two-layer structure is also provided in the prior art.
Disclosure of Invention
The embodiment of the application provides an acoustic wave filter, which can inhibit Rayleigh clutter and improve the comprehensive performance of the filter.
The embodiment of the application provides an acoustic wave filter, includes: the resonator comprises a plurality of resonators, a plurality of resonators and a plurality of control circuit, wherein the resonators comprise a plurality of series arm resonators and a plurality of parallel arm resonators, and the included angle between the series arm resonators and the parallel arm resonators is within a preset included angle interval;
each resonator includes:
a support substrate;
a piezoelectric film disposed on the support substrate;
and a plurality of electrodes disposed on the piezoelectric film.
Further, the thickness of the piezoelectric film is a first value;
the central distance between two adjacent electrodes in the plurality of electrodes is a second value;
the first value is less than 1.6 times the second value.
Further, the cut type of the piezoelectric film is an X-cut type.
Further, the preset included angle interval is [0 degrees, 15 degrees ].
Further, the material of the piezoelectric film is lithium niobate or lithium tantalate.
Further, the material of the support substrate is single crystal silicon carbide or sapphire.
Further, still include:
the thickness of the dielectric layer is within a preset thickness interval, and the preset thickness is (0nm,300 nm).
Further, the dielectric layer is arranged on the upper surface of the support substrate and on the lower surface of the piezoelectric film.
Further, the dielectric layer is arranged on the piezoelectric film; or;
the dielectric layer is disposed on the electrode.
Further, the thickness of the dielectric layer is a third value,
the third value is less than 0.7 times the first value.
The embodiment of the application has the following beneficial effects:
the acoustic wave filter disclosed by the embodiment of the application comprises a plurality of resonators, wherein the resonators comprise a plurality of series arm resonators and a plurality of parallel arm resonators, and an included angle between the series arm resonators and the parallel arm resonators is within a preset included angle interval; each resonator includes a support substrate, a piezoelectric thin film disposed on the support substrate, and a plurality of electrodes disposed on the piezoelectric thin film. Based on this application embodiment with the contained angle setting between series arm syntonizer and the parallel arm syntonizer predetermine the contained angle interval, can restrain the rayleigh clutter, improve the comprehensive properties of wave filter.
Drawings
In order to more clearly illustrate the technical solutions and advantages of the embodiments of the present application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic cross-sectional view of a conventional lithium niobate-silicon carbide double-layer structure-based resonator;
fig. 2 is a schematic top view of a conventional lithium niobate-silicon carbide bilayer structure-based resonator;
FIG. 3 is a schematic diagram of a prior art filter;
FIG. 4 is a schematic diagram of admittance curves of a prior art two-layer resonator at different wavelengths;
FIG. 5 is a top mode diagram of a shear horizontal wave;
FIG. 6 is a cross-sectional mode shape diagram of Rayleigh clutter;
FIG. 7 is a schematic diagram of the electrical response of a two-layer filter and its corresponding resonator;
fig. 8 is a schematic structural diagram of an acoustic wave filter according to an embodiment of the present application;
FIG. 9 is a graphical illustration of admittance responses for different in-plane propagation directions of a two-layer resonator at a wavelength of 2 um;
FIG. 10 is a graphical illustration of admittance responses for different in-plane propagation directions of a two-layer resonator at a wavelength of 1.6 um;
FIG. 11 is a schematic diagram illustrating an electrical response of a filter and its corresponding resonator according to an embodiment of the present application;
FIG. 12 is a schematic diagram of the electrical response of a prior art resonator having a three-layer structure;
fig. 13 is a schematic cross-sectional view of an acoustic wave filter according to an embodiment of the present application.
Detailed Description
To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings. It should be apparent that the described embodiment is only one embodiment of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
An "embodiment" as referred to herein relates to a particular feature, structure, or characteristic that may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it should be understood that the terms "upper", "lower", "top", "bottom", and the like refer to orientations or positional relationships based on those shown in the drawings, and are used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the device/system or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present application. The terms "first", "second" and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second" and "third" may explicitly or implicitly include one or more of the features. Moreover, the terms "first," "second," and "third," etc. are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in other sequences than described or illustrated herein. Furthermore, the terms "comprising" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions.
Fig. 1 is a schematic cross-sectional view of a conventional lithium niobate-silicon carbide double-layer structure-based resonator, fig. 2 is a schematic top view of a conventional lithium niobate-silicon carbide double-layer structure-based resonator, and fig. 3 is a schematic structural view of a conventional filter. As shown in fig. 1 to 3, the existing filter may be formed by topological cascade connection of a plurality of double-layer resonators, wherein the piezoelectric thin film of the resonator may be 500nm of X-cut lithium niobate, the in-plane propagation direction may be 170 °, the region 101 in fig. 1 is an interdigital electrode, the region 103 is a reflective gate electrode, the material of the electrode may be aluminum, the width of the electrode may be 120nm, the duty ratio of the electrode may be 50%, and the supporting substrate may be 4H-SiC.
Fig. 4 is a schematic diagram of admittance curves of a conventional two-layer resonator at different wavelengths, fig. 5 is a top-view mode shape diagram of a shear horizontal wave, fig. 6 is a cross-sectional mode shape diagram of a rayleigh clutter, and fig. 7 is a schematic diagram of an electrical response of a two-layer filter and its corresponding resonator. As can be seen from fig. 4, as the wavelength of the electrode decreases from 2.4um to 1.8um, rayleigh clutter begins to appear in the admittance curve, and as the wavelength decreases, the intensity of the rayleigh clutter gradually increases. As can be seen in fig. 5, the horizontal shear wave vibrates in the horizontal direction. As can be seen from fig. 6, the rayleigh clutter vibrates in the thickness direction. As can be seen from fig. 7, when rayleigh clutter exists in the resonators, a large notch is generated in the pass band of the filter, thereby affecting the normal operation of the filter. For the double-layer structure of lithium niobate/lithium tantalate-silicon, because the sound velocity of silicon is only slightly higher than that of the SH0 mode in lithium niobate or lithium tantalate, the energy of the SH0 mode is easy to leak into the silicon substrate, resulting in poor comprehensive performance of the resonator, silicon is not directly used as a supporting substrate, but a silicon oxide layer is added between the piezoelectric film and the silicon, so as to improve the local effect of the sound wave energy in the piezoelectric film.
In order to solve the problems that a filter formed by topologically cascading a plurality of resonators of a lithium niobate/lithium tantalate-silicon carbide or sapphire double-layer structure has Rayleigh clutter, the flatness of a pass band of the filter is seriously influenced, and the performance of the filter is seriously influenced, the embodiment of the application provides an acoustic wave filter.
Next, a specific embodiment of an acoustic wave filter according to the present application is described, and fig. 8 is a schematic structural diagram of an acoustic wave filter according to the present application. The present description provides constituent structures as illustrated in the examples or structural diagrams, but may include more or fewer devices based on routine or non-inventive labor. The constituent structure recited in the embodiment is only one of a plurality of constituent structures, and does not represent a unique constituent structure, and in actual execution, it can be executed according to the constituent structure shown in the embodiment or the drawings.
As shown in fig. 8, the filter may include: the plurality of resonators may include a plurality of series arm resonators and a plurality of parallel arm resonators, and an angle between the series arm resonators and the parallel arm resonators may be within a preset angle interval, that is, an angle θ may exist in an in-plane placing direction of the series arm resonators and the parallel arm resonators. The Rayleigh clutter can be suppressed and the comprehensive performance of the filter can be improved by arranging the directional included angle in the plane of the series arm resonator and the parallel arm resonator.
In the embodiments of the present application, each resonator may include a support substrate, a piezoelectric thin film that may be disposed on the support substrate, and a plurality of electrodes that may be disposed on the piezoelectric thin film. That is, the filter may include a series-arm resonator and a parallel-arm resonator, wherein each of the series-arm resonator and the series-arm resonator may include, from bottom to top, a support substrate, a piezoelectric film, and a plurality of electrodes.
In the embodiment of the present application, the preset included angle interval may be [0 °,15 ° ]. Alternatively, the in-plane placement directions of the series-arm resonators and the parallel-arm resonators may have an angle θ, which may be 4 °, that is, θ ═ 4 °.
In the embodiment of the present application, the thickness of the piezoelectric film may be a first value h, and a center distance between two adjacent electrodes in the plurality of electrodes may be a second value p. Wherein the first value h can be less than 1.6 times the second value p, i.e. h is less than or equal to 1.6 p. The wavelength and in-plane propagation direction of the resonator can be changed by setting the thickness of the piezoelectric film and the thickness of the electrodes.
In the embodiment of the application, the supporting substrate is a low acoustic transmission loss material with the bulk acoustic velocity higher than that of monocrystalline silicon.
In an alternative embodiment, the material of the support substrate may be single crystal silicon carbide, SiC, or Sapphire. Specifically, the material of the support substrate may be 4H — SiC.
In the embodiment of the present application, the material of the piezoelectric film may be lithium niobate or lithium tantalate.
In the embodiment of the application, the acoustic wave filter is mainly formed by cascading a plurality of series arm resonators and parallel arm resonators, horizontal shear waves SH0 are excited in a piezoelectric film through electrodes, and the acoustic field energy is localized in the piezoelectric film by utilizing a high-sound-velocity supporting substrate so as to realize high performance of the device.
For lithium niobate and lithium tantalate materials, a rotating Y-cut type or an X-cut type is generally selected for excitation of the horizontal shear wave SH 0. For the rotary Y-cut lithium niobate or lithium tantalate, the corresponding euler angles are (B, a,0 °). Wherein, B is the included angle between the resonator and the positive direction of the X axis of the crystal in a plane, and A is the included angle between the positive direction of the Y axis of the crystal and the normal direction of the film. For example, Y42 ° cut corresponds to an euler angle of (B,48 °,0 °). In the design process of the device, B is generally 0 degrees, mainly because lithium niobate and lithium tantalate materials are trigonal piezoelectric materials, and when the materials are in other directions in a plane (B is not equal to 0), the response of the horizontal shear wave SH0 is split, namely two resonance peaks of SH0 modes appear. Therefore, for a rotating Y-cut lithium niobate or lithium tantalate based acoustic wave filter to include all resonators, it is necessary to excite horizontal shear wave SH0 along the crystal X-axis direction. For X-cut lithium niobate or lithium tantalate, the corresponding Euler angle is (B, 90 degrees), wherein B is the included angle between the resonator and the positive direction of the Y axis of the crystal in the plane, and the response of the horizontal shear wave SH0 does not generate 'splitting' in all directions in the YOZ plane, but due to the obvious anisotropy of the piezoelectric material, the sound velocity and the electromechanical coupling coefficient of the resonator have obvious changes in different propagation directions, so that in the design process, a proper in-plane propagation direction needs to be selected according to the design requirements and the actual conditions, namely the value of B is determined.
In the embodiment of the present application, the cut of the piezoelectric film may be an X-cut.
Because the filter is composed of the series arm resonator and the parallel arm resonator, the anti-resonance point (lowest admittance point) of the parallel arm resonator and the resonance point (highest admittance point) of the series arm resonator need to be close to the same frequency, in other words, two resonator groups with different wavelengths are needed in the acoustic wave filter. The existing filter formed by cascading a plurality of resonators with a double-layer structure may have Rayleigh clutter, seriously influences the flatness of a pass band of the filter, and seriously influences the performance of the filter. Fig. 9 is a graph illustrating admittance responses of the resonator with the double-layer structure in different in-plane propagation directions at a wavelength of 2um, and fig. 10 is a graph illustrating admittance responses of the resonator with the double-layer structure in different in-plane propagation directions at a wavelength of 1.6 um. As shown in fig. 9 and 10, the admittance response is "clean" for a resonator with a wavelength of 2um only at 170 ° in-plane propagation direction, and "clean" for a resonator with a wavelength of 1.6um only at 174 ° in-plane propagation direction.
In the embodiment of the present application, for an acoustic wave filter of an X-cut piezoelectric thin film and a high acoustic velocity support substrate structure, the wavelength and the in-plane propagation direction of the series arm resonator and the parallel arm resonator may be set, respectively. Alternatively, the wavelength of the series-arm resonator may be set to 1.6um, the in-plane propagation direction may be 174 °, the wavelength of the parallel-arm resonator may be set to 1.95um, and the in-plane propagation direction may be 170 °, that is, the angle between the propagation directions defined by the electrodes of the series-arm resonator and the parallel-arm resonator is 4 °. Fig. 11 is a schematic diagram of the electrical response of the filter and the corresponding resonators according to the embodiment of the present application, in which the passband of the 4 th-order acoustic wave filter formed by the 4 ° included angle between the series-arm resonators and the parallel-arm resonators is flat and no rayleigh clutter is significant.
In the embodiment of the application, through setting up the in-plane propagation direction of series arm syntonizer and parallel arm syntonizer respectively to and with the contained angle setting between series arm syntonizer and the parallel arm syntonizer predetermine the contained angle within a range, can restrain the rayleigh clutter, improve the comprehensive properties of wave filter.
Schematic diagram of admittance curves of existing three-layer structure resonator based on lithium tantalate-silicon dioxide-silicon with different wavelengths, wherein the supporting substrate of the resonator is 300nmSiO2500 umSi. Fig. 12 is a schematic diagram of the electrical response of a conventional three-layer resonator, in which horizontal shear waves SH0 can be excited for acoustic wave resonators with different wavelengths, and the admittance response of the resonator is "clean", and no rayleigh clutter exists between resonance and anti-resonance. The reason is that: in the piezoelectric film, the sound velocity of the SH0 mode is only slightly higher than that of the rayleigh mode, and the sound velocity thereof is more susceptible to the influence of the dielectric layer below the piezoelectric film than that of the SH0 mode because the rayleigh mode vibrates in the XZ plane (cross section), for example: if a high-sound-velocity material is arranged below the piezoelectric film, the sound velocity of the rayleigh wave is improved more remarkably than that of the SH0 wave, and the sound velocity of the rayleigh wave and the SH0 wave are close to each other; on the other hand, in the case of a low-sound-velocity material, the rayleigh-mode sound velocity is more reduced, and therefore, the resonance peak of the SH0 mode is further separated in the admittance curve of the resonator. However, the filter based on the lithium tantalate-silica-silicon three-layer structure is not suitable for high-frequency and large-bandwidth application scenarios. Moreover, when the dielectric layer below the piezoelectric film is thin, the rayleigh clutter is still not far away from the SH0 mode and still affects the construction of the filter, so the aboveThe arrangement of the direct included angle of the series-arm resonator and the parallel-arm resonator within the preset included angle interval described herein is also applicable to the lithium tantalate-silica-silicon three-layer structure.
Next, a specific embodiment of an acoustic wave filter according to the present application will be described, and fig. 13 is a schematic cross-sectional view of an acoustic wave filter according to an embodiment of the present application. The present description provides constituent structures as illustrated in the examples or structural diagrams, but may include more or fewer devices based on routine or non-inventive labor. The constituent structure recited in the embodiment is only one of a plurality of constituent structures, and does not represent a unique constituent structure, and in actual execution, it can be executed according to the constituent structure shown in the embodiment or the drawings.
Specifically, as shown in fig. 13, the filter may include a plurality of resonators, and the plurality of resonators may include a plurality of series-arm resonators and a plurality of parallel-arm resonators, and an angle between the series-arm resonators and the parallel-arm resonators is within a preset angle interval. Each resonator may include: a support substrate 1301, a dielectric layer 1303, a piezoelectric film 1305, interdigital electrodes 1307, and reflective grid electrodes 1309. The piezoelectric film may be disposed on the support substrate, the dielectric layer may be disposed on an upper surface of the support substrate, and the plurality of electrodes may be disposed on the piezoelectric film on a lower surface of the piezoelectric film. That is, the filter may include a series-arm resonator and a parallel-arm resonator, wherein each of the series-arm resonator and the series-arm resonator may include, from bottom to top, a support substrate, a piezoelectric film, and a plurality of electrodes.
In the embodiment of the present application, the dielectric layer may also be disposed on the piezoelectric film without covering the electrode, and the dielectric layer may also be disposed on the electrode, that is, covering the piezoelectric film and the electrode.
In the embodiment of the present application, the preset included angle interval may be [0 °,15 ° ].
In the embodiment of the application, the supporting substrate is a low acoustic transmission loss material with the bulk acoustic velocity higher than that of monocrystalline silicon.
In an alternative embodiment, the material of the support substrate may be single crystal silicon carbide, SiC, or Sapphire. Specifically, the material of the support substrate may be 4H — SiC.
In the embodiment of the present application, the material of the piezoelectric film may be lithium niobate or lithium tantalate.
In the embodiment of the present application, the cut of the piezoelectric film may be an X-cut.
In this embodiment of the application, the thickness of the dielectric layer may be within a preset thickness interval, and optionally, the preset thickness may be (0nm,300 nm).
In an alternative embodiment, the dielectric layer may be silicon dioxide, silicon nitride, or aluminum oxide.
In the embodiment of the application, the thickness of the dielectric layer is reduced, the in-plane propagation directions of the series arm resonators and the parallel arm resonators are respectively set, and the included angle between the series arm resonators and the parallel arm resonators is set in the preset included angle interval, so that the application scene of the integration of the miniaturized device can be suitable.
As can be seen from the above embodiments of the acoustic wave filter provided by the present application, the acoustic wave filter includes a plurality of resonators, the plurality of resonators include a plurality of series arm resonators and parallel arm resonators, an included angle between the series arm resonators and the parallel arm resonators is within a preset included angle interval, each resonator includes a supporting substrate, a piezoelectric thin film and a plurality of electrodes, the piezoelectric thin film is disposed on the supporting substrate, and the plurality of electrodes are disposed on the piezoelectric thin film. Based on this application embodiment through with the contained angle setting between series arm syntonizer and the parallel arm syntonizer predetermine the contained angle interval, can restrain the rayleigh clutter, improve the comprehensive properties of wave filter.
In the present invention, unless otherwise expressly stated or limited, the terms "connected" and "connected" are to be construed broadly, e.g., as meaning either a fixed connection or a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
It should be noted that: the foregoing sequence of the embodiments of the present application is for description only and does not represent the superiority and inferiority of the embodiments, and the specific embodiments are described in the specification, and other embodiments are also within the scope of the appended claims. In some cases, the actions or steps recited in the claims can be performed in the order of execution in different embodiments and achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown or connected to enable the desired results to be achieved, and in some embodiments, multitasking and parallel processing may also be possible or may be advantageous.
All the embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment is described with emphasis on differences from other embodiments.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. An acoustic wave filter, comprising: the resonator structures comprise a plurality of series arm resonators and a plurality of parallel arm resonators, and included angles between the series arm resonators and the parallel arm resonators are within a preset included angle interval;
each of the resonators includes:
a support substrate;
a piezoelectric film disposed on the support substrate;
a plurality of electrodes disposed on the piezoelectric film.
2. The filter of claim 1, wherein the thickness of the piezoelectric film is a first value;
the central distance between two adjacent electrodes in the plurality of electrodes is a second numerical value;
the first value is less than 1.6 times the second value.
3. The filter of claim 1, wherein the cut of the piezoelectric film is an X-cut.
4. The filter according to claim 1, wherein the predetermined angle interval is [0 °,15 ° ].
5. The filter according to claim 1, wherein the material of the piezoelectric thin film is lithium niobate or lithium tantalate.
6. The filter of claim 1, wherein the material of the support substrate is single crystal silicon carbide or sapphire.
7. The filter of claim 2, further comprising:
the thickness of the dielectric layer is within a preset thickness interval, and the preset thickness is (0nm,300 nm).
8. The filter of claim 7, wherein the dielectric layer is disposed on an upper surface of the support substrate and on a lower surface of the piezoelectric film.
9. The filter of claim 7, wherein the dielectric layer is disposed on the piezoelectric film; or;
the dielectric layer is disposed on the electrode.
10. The filter of claim 7, wherein the dielectric layer has a thickness of a third value,
the third value is less than 0.7 times the first value.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115001438A (en) * | 2022-06-21 | 2022-09-02 | 中国科学院上海微系统与信息技术研究所 | Structure of longitudinal leakage surface acoustic wave resonator and filter |
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