CN115865036A - Resonator and acoustic filter - Google Patents
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Abstract
A resonator includes a foreign substrate and an electrode assembly disposed on the foreign substrate. The heterogeneous substrate comprises a supporting substrate with small sound velocity scattering angle and anisotropy and a piezoelectric film arranged on the supporting substrate, and a heterogeneous interface is formed between the supporting substrate and the piezoelectric film. The vibration component of the target sound wave in at least one direction in the piezoelectric film has a characteristic of dispersion in sound velocity-thickness wavelength. The heterogeneous interface is used for reflecting target sound wave energy in the piezoelectric film back to the piezoelectric film, and reducing energy loss ways by utilizing the propagation characteristics of sound wave speed-thickness wavelength dispersion regulation and control of permeation and dispersion component ratio of the sound wave energy and the like. The leakage in the thickness direction can be reduced, and various boundary radiation and oblique radiation can be reduced, so that the acoustic filter with high quality factor is obtained, the in-band loss of the acoustic filter is reduced, and the band edge steepness and the squareness are enhanced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a resonator and an acoustic filter.
Background
The main function of the saw filter is filtering, wherein the band pass filter allows signals in a specific frequency band to pass through with very weak attenuation, while signals on both sides of the specific frequency band are removed with very strong attenuation. The indices of the acoustic filter include: insertion loss, squareness, bandwidth, out-of-band rejection, etc. The lower the insertion loss in the band, the higher the signal fidelity in a particular band, the closer the squareness is to 1, and the more accurate the filtering band is in 4G and 5G applications where band allocation is crowded. The quality factor of the acoustic resonator has a decisive influence on the insertion loss, the squareness, the bandwidth and the like of the acoustic filter, and the high-performance filter with the low insertion loss and the squareness close to 1 can be more easily obtained by the high-quality-factor resonator.
In general, a target acoustic wave excited in an acoustic resonator has energy leakage in the following ways, intrinsic transmission loss of the target acoustic wave propagating in a piezoelectric material, leakage of the target acoustic wave in the thickness direction of a substrate, and energy loss caused by coupling with a bulk acoustic wave, energy loss caused by scattering of the target acoustic wave at an interface region of an interdigital electrode and a reflection gate electrode, energy loss caused by lateral scattering at the end of the interdigital electrode, and the like. The leakage and radiation of the energy can cause energy loss after piezoelectric transduction and the quality factor of the resonator is reduced, so that the problems of poor band edge steepness, serious loss, high power consumption and the like of the acoustic filter are caused.
Disclosure of Invention
In order to solve the problem that the quality factor of the existing resonator is low, the application provides a resonator and an acoustic filter:
according to a first aspect of the present application, there is provided a resonator comprising:
the heterogeneous substrate comprises a supporting substrate and a piezoelectric film arranged on the supporting substrate, the sound velocity scattering angle of the supporting substrate is smaller than a preset scattering angle threshold value, the elastic coefficient of the supporting substrate is anisotropic, and a heterogeneous interface is formed between the supporting substrate and the piezoelectric film;
vibration components of target sound waves in at least one direction in the piezoelectric film have the characteristic of sound velocity-thickness wavelength dispersion, and the characteristic of the thickness wavelength dispersion is that the sound velocity of the target sound waves is increased along with the reduction of the ratio of the thickness of the piezoelectric film to the wavelength of the sound waves;
the hetero interface is used for rebounding the energy of the target sound wave in the piezoelectric film to the inside of the piezoelectric film.
On the other hand, the scattering angle of acoustic velocity of the support substrate satisfies the following formula
Where ω is angular frequency, ρ is density, k is wave vector, c 44 ，c 66 The elastic coefficient of anisotropy is, and θ is the scattering angle of sound velocity.
On the other hand, the ratio of the thickness of the piezoelectric film to the periodic line width of the electrode assembly is within the interval [0.02,0.15 ].
On the other hand, the electrode assembly comprises a plurality of interdigital electrodes, and the end part of each interdigital electrode in the plurality of interdigital electrodes is provided with a constraint assembly;
the constraint component is used for increasing the sound velocity difference between the interdigital electrode and the air gap; the air gap is a gap between the end of the interdigital electrode and a bus bar of the interdigital electrode.
On the other hand, the restraint assembly is connected with the end part of each interdigital electrode; or;
the restraining assembly is arranged on the upper surface of the end part of each interdigital electrode.
On the other hand, the density of the material of the constraint component is greater than that of the material of the interdigital electrode.
On the other hand, the material of the piezoelectric film includes lithium niobate, lithium tantalate, aluminum nitride, zinc oxide;
the material of the supporting substrate comprises silicon, silicon carbide, sapphire, diamond and quartz;
the interdigital electrode is made of gold, platinum, silver, copper, aluminum and an alloy of two or more of the gold, the platinum, the silver, the copper and the aluminum.
On the other hand, the ratio of the thickness of the interdigital electrode to the periodic line width of the interdigital electrode is within the interval [0.04,0.1 ].
On the other hand, the target acoustic waves comprise horizontal shear waves, symmetrical quasi-lamb waves, leaky longitudinal waves and anti-symmetrical quasi-lamb waves;
the vibration components in the target sound wave are not coupled with each other.
According to a second aspect of the present application, there is provided an acoustic filter comprising the resonator described above.
The resonator and the acoustic filter provided by the embodiment of the application have the following technical effects:
the heterogeneous substrate comprises a supporting substrate and a piezoelectric film arranged on the supporting substrate, the sound velocity scattering angle of the supporting substrate is smaller than a preset scattering angle threshold value, the elastic coefficient of the supporting substrate is anisotropic, and a heterogeneous interface is formed between the supporting substrate and the piezoelectric film; vibration components of target sound waves in at least one direction in the piezoelectric film have the characteristic of sound velocity-thickness wavelength dispersion, and the characteristic of the thickness wavelength dispersion is that the sound velocity of the target sound waves is increased along with the reduction of the ratio of the thickness of the piezoelectric film to the wavelength of the sound waves; the hetero interface is used for rebounding the energy of the target sound wave in the piezoelectric film to the inside of the piezoelectric film. By selecting the appropriate piezoelectric film and the supporting substrate, the embodiment of the application can directly reflect the target sound wave to the inside of the piezoelectric film at the heterogeneous interface, can reduce the leakage in the body in the thickness direction, and can regulate and control the propagation characteristics such as the penetration and scattering component ratio of the sound wave energy by utilizing the sound velocity-thickness wavelength dispersion characteristic of the sound wave, thereby reducing the energy loss way. The leakage in the thickness direction to the inside of the body can be reduced, and the boundary radiation and oblique radiation caused by the electrical discontinuity of the interdigital electrode and the reflection gate electrode can be reduced, so that the acoustic filter with high quality factor is obtained, the in-band loss of the acoustic filter is reduced, and the band edge steepness and the squareness are enhanced.
Drawings
In order to more clearly illustrate the technical solutions and advantages of the embodiments of the present application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a resonator provided in an embodiment of the present application;
FIG. 2 is a graph showing the variation of the acoustic velocity of the horizontal shear wave with the thickness-wavelength ratio in a lithium tantalate single-crystal substrate structure and a hetero-substrate structure provided in the examples of the present application;
FIG. 3 is a graph illustrating the variation of the horizontal shear sonic velocity with the thickness-to-wavelength ratio in two heterostructure substrate structures provided by embodiments of the present application;
FIG. 4 is a schematic view of a restraint assembly provided in embodiments of the present application;
FIG. 5 is a schematic diagram of the admittance and conductance curves of a resonator with a confinement assembly in accordance with an embodiment of the present invention;
FIG. 6 is a schematic diagram of the displacement mode shape of horizontal shear waves in a heterostructure under different thickness-wavelength ratios in real space provided by an embodiment of the present application;
FIG. 7 is a schematic diagram showing the relative ratio of energies of the y-component and the x + z-component of a horizontal shear wave in the thickness direction of a foreign substrate material structure according to an embodiment of the present application;
FIG. 8 is a schematic diagram of the variation of the mode shape of the total displacement of horizontal shear waves in the heterostructure at different thickness-to-wavelength ratios in wavenumber space provided by an embodiment of the present application;
FIG. 9 is a schematic diagram showing the variation of mode shape of the y-component of horizontal shear wave in the heterostructure at different thickness-to-wavelength ratios in wavenumber space provided by an embodiment of the present application;
FIG. 10 is a schematic diagram of the mode shapes of the x + z components of the shear horizontal wave in the heterostructure at different thickness-to-wavelength ratios in wavenumber space provided by the practice of the present application;
FIG. 11 is a graph showing the variation of the acoustic velocity of the horizontal shear wave with the thickness-wavelength ratio in a lithium tantalate single-crystal substrate structure and a hetero-substrate structure provided in the examples of the present application;
FIG. 12 is a schematic diagram of the displacement mode shape of horizontal shear waves in a heterostructure of substrates with different thickness-to-wavelength ratios in real space according to an embodiment of the present disclosure;
FIG. 13 is a schematic diagram showing the variation of the mode shape of the total displacement of horizontal shear waves in the heterostructure at different thickness-to-wavelength ratios in wavenumber space provided by an embodiment of the present application;
FIG. 14 is a schematic diagram showing the variation of mode shape of the y-component of horizontal shear wave in the heterostructure at different thickness-to-wavelength ratios in wavenumber space provided by an embodiment of the present application;
FIG. 15 is a schematic diagram of the mode shapes of the x + z components of the shear horizontal wave in the heterostructure at different thickness-to-wavelength ratios in wavenumber space provided by the practice of the present application;
FIG. 16 (a) is a filter response for a frequency band;
fig. 16 (b) shows the filter response for resonator set-up for different Q-values.
Detailed Description
To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings. It should be apparent that the described embodiment is only one embodiment of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
An "embodiment" as referred to herein relates to a particular feature, structure, or characteristic that may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it should be understood that the terms "first," "second," and "third," etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, features defined as "first," "second," and "third," etc., may explicitly or implicitly include one or more of the features. Moreover, the terms "first," "second," and "third," etc. are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in other sequences than described or illustrated herein. Furthermore, the terms "comprising," "having," and "being," as well as any variations thereof, are intended to cover non-exclusive inclusions.
The conventional piezoelectric single crystal, such as lithium niobate, lithium tantalate and other single crystal materials, has low sound velocity of slow shear wave, and the acoustic wave excited in the acoustic resonator based on the structure has energy leakage, including leakage in vivo in the thickness direction, boundary radiation and oblique radiation caused by electrical discontinuity of the interdigital transducer and the reflection grating, and lateral radiation caused by discontinuity of the end of the interdigital electrode and the bus bar of the interdigital electrode. The leakage and radiation of the energy can cause energy loss after piezoelectric transduction, and the quality factor of the resonator is reduced, so that the problems of poor band edge steepness, serious loss and high power consumption of the acoustic filter are caused.
A specific embodiment of a resonator according to the present application is described below, and fig. 1 is a schematic structural diagram of a resonator according to the present application. The description provides the components shown in the examples or figures, but may include more or less components based on routine or non-inventive efforts. The constituent structure recited in the embodiment is only one of a plurality of constituent structures, and does not represent a unique constituent structure, and in actual execution, the constituent structure can be executed according to the constituent structure shown in the embodiment or the schematic diagram.
As shown particularly in fig. 1, the resonator may include a foreign substrate and an electrode assembly disposed on the foreign substrate. The heterogeneous substrate may include a support substrate and a piezoelectric thin film disposed on the support substrate, a scattering angle of sound velocity of the support substrate may be smaller than a preset scattering angle threshold, an elastic coefficient of the support substrate may be various, and the preset scattering angle threshold may be 20 °. A hetero interface may be formed between the support substrate and the piezoelectric thin film. The target sound wave in the piezoelectric film has a characteristic that a vibration component in at least one direction has sound velocity-thickness wavelength dispersion, and the sound velocity-thickness wavelength dispersion may be such that the sound velocity of the target sound wave increases as the ratio of the thickness of the piezoelectric film to the wavelength of the sound wave decreases. The hetero-interface may be used to rebound the energy of the target acoustic wave within the piezoelectric film to the interior of the piezoelectric film. Through selecting a proper piezoelectric film and a supporting substrate with a small sound velocity scattering angle, the energy of the target sound wave can be effectively rebounded to the inside of the piezoelectric film at a heterogeneous interface, and the leakage in the thickness direction to the inside of a body can be reduced. Due to the existence of the heterogeneous interface, the component of the conversion of the target sound wave mode in the piezoelectric film positioned right below the electrode assembly to the stray mode is less, and the scattering energy loss is effectively reduced. And moreover, by utilizing the characteristic that the target sound wave has sound velocity-thickness wavelength dispersion, when the thickness-wavelength ratio is reduced, the target sound wave and the energy rebound of the component thereof in the piezoelectric film are increased, the leakage in the thickness direction is reduced, the conversion of the target sound wave mode to the stray mode is reduced, and the scattering loss is effectively reduced.
In an embodiment of the present application, an electrode assembly may include a first interdigital electrode, a second interdigital electrode, and a reflective gate electrode, the first interdigital electrode and the second interdigital electrode being disposed crossing on a foreign substrate, the reflective gate electrode being disposed on the foreign substrate around the first interdigital electrode and the second interdigital electrode. A first interdigital electrode assembly in the interdigital electrode assemblies is grounded, a second interdigital electrode assembly in the interdigital electrode assemblies is connected with a power supply, and a reflecting gate electrode is a suspended electrode or a reflecting gate electrode is connected with the power supply;
when the sound velocity scattering angle is sufficiently small, the energy rebound of the target sound wave and the component thereof in the piezoelectric film is increased, and the energy leakage in the thickness direction is reduced. In addition, due to the existence of a heterogeneous interface, the conversion component of a target sound wave mode in the piezoelectric film right below the junction of the interdigital electrode and the reflection gate electrode to a stray mode is less, and the scattering energy loss is effectively reduced.
In some possible embodiments, the electrode assembly may further include a plurality of interdigital electrodes and reflective gate electrodes, and the electrode assembly recited herein may include the first interdigital electrode, the second interdigital electrode and the reflective gate electrode is merely an example, and other numbers of interdigital electrodes and reflective gate electrodes are also within the scope of the present disclosure, and the examples of the present disclosure are not particularly limited.
Fig. 2 is a graph illustrating the variation of the acoustic velocity of the horizontal shear wave with the thickness-wavelength ratio in a lithium tantalate single-crystal substrate structure and a foreign substrate structure provided in the embodiments of the present application, wherein the foreign substrate may include a lithium tantalate piezoelectric thin film and a silicon carbide substrate. As can be seen from fig. 2, the amplitude of the change of the sound velocity of the horizontal shear wave along with the thickness-wavelength ratio in the lithium tantalate single-crystal substrate structure is small, and the amplitude of the change of the sound velocity of the horizontal shear wave along with the thickness-wavelength ratio in the lithium tantalate piezoelectric thin film + silicon carbide heterogeneous substrate structure is large, that is, the sound velocity-thickness wavelength dispersion is strong. Compared with the lithium tantalate single crystal substrate material which is basically free of sound velocity-thickness wavelength dispersion characteristics, the method has the advantages that the heterogeneous substrate structure with sound velocity-thickness wavelength dispersion strong is selected to prepare the acoustic wave device, and then the ratio of the thickness of the piezoelectric film to the periodic line width of the interdigital electrode is adjusted, so that the propagation characteristics of penetration, scattering component ratio and the like of acoustic wave energy can be regulated and controlled, and further the leakage components of energy leakage in the thickness direction, boundary radiation and oblique radiation can be effectively reduced.
Fig. 3 is a graph illustrating the variation of the horizontal shear wave velocity with the thickness-wavelength ratio in two heterostructure substrate structures provided by the embodiments of the present application. The round dot curve can represent a curve of the horizontal shear wave sound velocity of the lithium tantalate/silicon carbide heterogeneous substrate structure changing along with the thickness-wavelength ratio, and the triangular curve can represent a curve of the horizontal shear wave sound velocity of the lithium tantalate/sapphire heterogeneous substrate structure changing along with the thickness-wavelength ratio.
As can be seen from fig. 3, the sound velocity of the vibration component in at least one direction in which the target acoustic wave in the piezoelectric film exists may increase as the ratio of the thickness of the piezoelectric film to the wavelength of the acoustic wave decreases. Meanwhile, it can be seen that lithium tantalate LiTaO is used 3 In the structure of the film and the supporting substrate, the variation range of the sound velocity of the target sound wave in the range of 0.02-0.15 of the ratio of the thickness of the piezoelectric film to the wavelength of the sound wave is large, namely the sound velocity-thickness wavelength is high in dispersion. The support substrate has obvious anisotropic characteristics, and the regulation and control effects of the support substrate with small sound velocity scattering angle, high sound velocity and anisotropy on the sound wave component can be more remarkable. Therefore, the ratio of the thickness of the piezoelectric film to the periodic line width of the interdigital electrode can be set in the interval [0.02,0.15]]And (4) the following steps. Wherein, the periodic line width may refer to: the distance between two adjacent interdigital electrodes. On the basis of selecting a heterogeneous substrate structure with sound velocity-thickness wavelength chromatic dispersion, the propagation characteristics of penetration, scattering component ratio and the like of sound wave energy can be regulated and controlled by adjusting the ratio of the thickness of the piezoelectric film to the periodic line width of the interdigital electrode, and the leakage components of energy leakage in the thickness direction, boundary radiation and oblique radiation can be effectively reduced.
In the embodiment of the application, the constraint component can be a wider interdigital electrode to improve the electrode duty ratio, or a layer of electrode material is added on a part of the interdigital electrode.
Fig. 4 is a schematic diagram of a confinement assembly provided in an embodiment of the present application, and fig. 5 is a schematic diagram of an admittance curve and a conductance curve of a resonator having a confinement assembly in an embodiment of the present application, wherein "V" is a conventional electrode design. In some possible embodiments, the restraining elements may be connected to the ends of each interdigitated electrode, such as the "P" configuration of fig. 5. The density of the material of the constraining assembly may be greater than the density of the material of the interdigitated electrodes. Alternatively, the restraining elements may be disposed on the upper surface of each interdigital electrode, such as the "T" configuration of fig. 5. The density of the material of the constraining assembly may be greater than the density of the material of the interdigitated electrodes. Still alternatively, a part of the restraining member may be connected to the end portion of each interdigital electrode, and a part of the restraining member may be disposed on the upper surface of each interdigital electrode. As can be seen from fig. 5, the total energy of the electrode transducer is constant, and the reduction of the total energy of the electrode transducer into a transverse leakage mode results in more energy of the target acoustic wave mode and a higher quality factor of the resonator.
In the embodiment of the present application, the material of the piezoelectric film may include lithium niobate, lithium tantalate, aluminum nitride, and zinc oxide.
In the embodiment of the present application, the material of the support substrate may include silicon, silicon carbide, sapphire, diamond, and quartz.
In the embodiment of the present application, the material of the interdigital electrode may include gold, platinum, silver, copper, aluminum, and an alloy of two or more thereof.
In the embodiment of the application, too thick or too thin metal is not favorable to excitation and utilization of target sound wave mode, if the metal is too thin, electrode resistance is big, electrode loss is dominant and can restrict the performance promotion of device, the metal is too thick, resonance characteristics can change greatly, ruili clutter and target sound wave mode coupling can lead to the electromechanical coupling coefficient of target sound wave mode to reduce to and the existence of clutter is unfavorable for designing the single-band filter. Therefore, the ratio of the thickness of the interdigital electrode to the periodic line width of the differential electrode can be within the interval [0.04,01 ].
In the embodiment of the application, the target acoustic waves comprise horizontal shear waves, symmetrical quasi-lamb waves, leaky longitudinal waves and anti-symmetrical quasi-lamb waves; the vibration components in the target sound wave are not coupled with each other, and the sound velocity of the vibration components in at least one direction of the target sound wave in the piezoelectric film is increased along with the reduction of the ratio of the thickness of the piezoelectric film to the wavelength of the sound wave.
The high quality factor resonator is described below with reference to several specific examples.
Example one: using lithium tantalate LiTaO 3 And a hetero-substrate structure of silicon carbide SiC.
Lithium tantalate LiTaO 3 And silicon carbide SiC are both materials with low intrinsic loss, and are materials with small sonic scattering angle, high sonic velocity and strong anisotropy. When the target sound wave is a horizontal shear wave, lithium tantalate (LiTaO) 3 The sound velocity of the horizontal shear wave in the piezoelectric film is about 4000-4800m/s, and the sound velocity of the slow shear wave of the silicon carbide SiC substrate is as high as 7126m/s. Namely, the sound velocity of the target sound wave is far less than that of the slow shear wave of the silicon carbide SiC, and the target sound wave and the slow shear wave are directly combined to introduce lithium tantalate LiTaO 3 The silicon carbide SiC heterojunction interface is a low/high acoustic resistance interface, has excellent acoustic energy localization capability and can convert lithium tantalate (LiTaO) 3 The target sound wave excited by the piezoelectric film is better confined on the surface, and the leakage of energy in the thickness direction can be reduced. And, lithium tantalate LiTaO 3 The strong anisotropy of (a) allows tunability of the scattered and leakage components of acoustic energy at the heterointerface.
The finite element simulation analysis can obtain that the horizontal shear wave of the heterogeneous substrate structure has the characteristic of sound velocity-thickness wavelength dispersion, namely, the sound velocity of the horizontal shear wave is increased along with the reduction of the ratio of the thickness of the piezoelectric film to the wavelength of the sound wave. The displacement of the horizontal shear wave in this material structure can be divided into three components, x, y and z. Where for a shear-horizontal wave, y is the principal component and the x + z component is the projected component of the other sound waves in a particular direction into the shear-horizontal wave, the two can be analyzed in combination, i.e. the x + z component. The x + z component reflects the scattering leakage of the discontinuities of the interdigitated electrodes and the reflective gate electrodes into the support substrate. Further, y component and x + z componentThe quantities may be decoupled, i.e. the target acoustic wave may be derived from lithium tantalate LiTaO 3 When the piezoelectric film leaks to the supporting substrate by scattering and the like, the y component is only converted into the y component to enter the substrate, and the x + z component is only converted into the x + z component to enter the substrate.
Fig. 6 is a schematic diagram of the displacement mode shapes of horizontal shear waves in the heterostructure under different thickness-wavelength ratios in real space provided by the embodiment of the present application. Fig. 6 (a) to 6 (e) show the changes in the acoustic mode shape when the thickness-wavelength ratio is reduced from 0.425 to 0.085, respectively. As can be seen from fig. 6, the energy distribution and the displacement of the target acoustic wave mode have little difference with the change of the thickness-wavelength ratio, and the modes with different modes coupled or vibrating in directions different from the X-Z plane cannot be distinguished, so that the target acoustic wave mode needs to be decomposed into components, and then transformed into a wave number space by using two-dimensional fourier transform, so as to more clearly analyze the source of loss and the change of the components.
Fig. 7 is a schematic diagram of the variation of the relative energy ratio of the y component and the x + z component of the horizontal shear wave with the thickness-wavelength ratio in the thickness direction of the foreign substrate material structure provided by the embodiment of the application, wherein the black long horizontal line with the ordinate scale of 0 is the depth position of the foreign interface. The energy ratio on the abscissa of the graph is normalized by the total displacement of each point on the curve, which is different, so that the image is only suitable for determining the energy ratio at different thickness-wavelength ratios of the depth contrast.
From the energy ratio in the thickness direction, it can be seen that the principal component y of the horizontal shear wave is mainly concentrated on lithium tantalate LiTaO 3 Within the piezoelectric film, i.e., the target acoustic wave, is well reflected and confined at the heterointerface, while what results in acoustic energy loss is the scattering of the x + z vibration component into the substrate at the discontinuities of the interdigital electrodes and the reflective grating.
In the thickness direction, when the depth crosses the hetero interface and enters the silicon carbide SiC, the horizontal shear wave principal component y is rapidly reduced, and the ratio of x + z is rapidly increased. At a fixed position in the depth direction of the surface layer of the silicon carbide SiC, the relationship between the ratio of x + z and the thickness-wavelength ratio is as follows: as the wavelength increases, the x + z ratio decreases, scattering propagation into the supporting substrate at the discontinuity between the interdigital electrode and the reflective grating results in acoustic energy loss, limiting the Q value. When the x + z ratio is reduced, the energy loss ratio is reduced, and a high-quality factor can be obtained. The critical value of the thickness-wavelength ratio required for low loss and high quality factor is around 0.15, i.e., it is easier to obtain a low loss acoustic wave device when the thickness-wavelength ratio is less than 0.15.
Fig. 8 is a schematic diagram of the mode shape variation of the total displacement of the horizontal shear wave in the heterostructure under different thickness-wavelength ratios in wavenumber space provided by an embodiment of the present application, fig. 9 is a schematic diagram of the mode shape variation of the y-component of the horizontal shear wave in the heterostructure under different thickness-wavelength ratios in wavenumber space provided by an embodiment of the present application, and fig. 10 is a schematic diagram of the mode shape of the x + z-component of the horizontal shear wave in the heterostructure under different thickness-wavelength ratios in wavenumber space provided by an embodiment of the present application. Fig. 8 (a) - (e), fig. 9 (a) - (e) and fig. 10 (a) - (e) show the mode shape change when the thickness-wavelength ratio is reduced from 0.425 to 0.085, respectively. In wavenumber space, two lines along the β z direction represent the principal mode of the target acoustic wave mode and may represent shear horizontal waves, and bright spots or arcs inside the two lines may represent waves other than the target acoustic wave mode. Fig. 8 (a) shows the total displacement of the shear horizontal wave in the plane β x- β z in the wavenumber space, i.e., the x, y, and z components of the target acoustic wave mode, at a thickness-to-wavelength ratio of 0.425. The inner points of the lines correspond to fig. 9 and 10, respectively, except for the target acoustic wave mode. Fig. 9 shows a main component y of a target acoustic wave mode in a beta x-beta z plane, except horizontal shear waves, two middle bright spots are bulk waves in silicon carbide SiC of a supporting substrate, fig. 10 shows a component x + z of the target acoustic wave mode in the beta x-beta z plane, and besides the horizontal shear waves, a single middle bright spot shows scattering of the x + z component into the supporting substrate at a discontinuity of an interdigital electrode and a reflecting grid. When the thickness-to-wavelength ratio is reduced from 0.425 to 0.085, there is no significant change in the total displacement and y-component, indicating that the principal components of the target acoustic mode are well reflected, confined and utilized in this hetero-substrate structure. However, the bright points of scattering leakage of the x + z components are gradually weakened or even disappear, which shows that the scattering of the discontinuity of the interdigital electrode and the reflecting grating to the supporting substrate is gradually weakened along with the dispersion change of the thickness-wavelength ratio, so that the low-loss high-Q device can be obtained under the condition that the thickness-wavelength ratio with small value is designed in the heterogeneous substrate structure.
As can be seen from fig. 9-10, the leakage component ratio of x + z is very small, which indicates that the leakage in the thickness direction into the body has been solved, and the quality factor of the resonator is already 4-6 times higher than that of the conventional resonator, i.e. the hetero-interface is a low/high acoustic resistance interface, which has excellent acoustic energy localization capability, so that the y component does not substantially enter the substrate, therefore, in this hetero-substrate structure, the energy loss path is mainly the boundary radiation and oblique radiation caused by the electrical discontinuity of the interdigital transducer and the reflective grating, and once the energy loss of this path is solved, the quality factor of the resonator can be further improved.
When the thickness-wavelength ratio is changed and the sound velocity is improved, the sound wave components have different evolution and transformation at the heterogeneous interface and the electrical discontinuous interface of the interdigital electrode/reflective grid. In lithium tantalate LiTaO 3 In a hetero-substrate of + silicon carbide SiC, the y component is in the piezoelectric thin film LiTaO no matter how the thickness-wavelength ratio of the resonator changes 3 The internal stable transmission, namely the horizontal shear wave is stably restrained on the surface of the foreign substrate, does not enter the supporting substrate and does not introduce energy leakage. The main sources of energy loss at this time are boundary radiation and tilt radiation caused by electrical discontinuities of the interdigital transducer and the reflective grating, while leakage of the x + z component at this time is a component corresponding to energy scattering and dissipation. The x + z component fraction increases with increasing thickness-to-wavelength ratio, resulting in increased energy leakage. Then, by using the dispersion characteristic of the x + z component ratio along with the thickness-wavelength ratio, low-loss propagation can be obtained at a very small thickness-wavelength ratio.
Example two: using lithium tantalate LiTaO 3 And Sapphire foreign substrate structures.
Lithium tantalate LiTaO 3 And Sapphire, which has a high acoustic velocity and has a small acoustic scattering angle and an anisotropic elastic modulus, are both low in material loss and radio frequency loss. When the target sound wave is horizontal shear wave, water in the lithium tantalate piezoelectric filmThe sound velocity of the flat shear wave is about 4000-4800m/s, and the sound velocity of the slow shear wave of the sapphire supporting substrate is as high as 6045m/s. The sound velocity of the target sound wave is far smaller than that of the slow shear wave of sapphire, and the target sound wave and the slow shear wave are directly combined to introduce lithium tantalate (LiTaO) 3 The hetero-interface of Sapphire is a low/high acoustic resistance interface, has excellent acoustic energy localization capability and can convert lithium tantalate (LiTaO) 3 The sound wave excited by the piezoelectric film is better confined on the surface, and the leakage of energy in the thickness direction can be reduced. In addition, the strong anisotropy of sapphire can also enable the scattering and leakage of acoustic wave energy to have controllability at a heterogeneous interface.
The method can be obtained through finite element simulation, and similar to the structure of the lithium tantalate and silicon carbide heterogeneous substrate, the horizontal shear wave of the lithium tantalate and sapphire structure also has the dispersion characteristic of the thickness-wavelength ratio of the piezoelectric film, namely, the sound velocity of the horizontal shear wave is increased along with the reduction of the ratio of the thickness of the piezoelectric film to the wavelength of the sound wave.
Fig. 11 is a graph illustrating the variation of the acoustic velocity of the horizontal shear wave with the thickness-wavelength ratio in a lithium tantalate single-crystal substrate structure and a foreign substrate structure provided in the embodiments of the present application, wherein the foreign substrate may include a lithium tantalate piezoelectric thin film and sapphire. As can be seen from fig. 11, the amplitude of the change of the sound velocity of the horizontal shear wave along with the thickness-wavelength ratio in the lithium tantalate single crystal substrate structure is small, and the amplitude of the change of the sound velocity of the horizontal shear wave along with the thickness-wavelength ratio in the lithium tantalate piezoelectric thin film + sapphire hetero-substrate structure is large, that is, the sound velocity-thickness wavelength dispersion is strong. Compared with the lithium tantalate single crystal substrate material which is basically free of sound velocity-thickness wavelength dispersion characteristics, the method has the advantages that the heterogeneous substrate structure with sound velocity-thickness wavelength dispersion strong is selected to prepare the acoustic wave device, and then the ratio of the thickness of the piezoelectric film to the periodic line width of the interdigital electrode is adjusted, so that the propagation characteristics of penetration, scattering component ratio and the like of acoustic wave energy can be regulated and controlled, and further the leakage components of energy leakage in the thickness direction, boundary radiation and oblique radiation can be effectively reduced.
Similar to the structure of the lithium tantalate + silicon carbide heterostructure, when the thickness-wavelength ratio is changed and the sound velocity is increased, the sound wave component has different evolution at the lithium tantalate/sapphire heterostructure interface and the electrical discontinuity interface of the interdigital electrode/reflective grating. In the hetero-substrate structure of lithium tantalate and silicon carbide, no matter how the thickness-wavelength ratio of the resonator changes, the y component is stably transmitted in the lithium tantalate film, namely, the horizontal shear wave is stably confined on the surface of the hetero-substrate, does not enter the supporting substrate and does not introduce energy leakage. At this time, the energy loss mainly comes from boundary radiation and oblique radiation caused by electrical discontinuity of the interdigital transducer and the reflection grating, the ratio of the x + z component at this time is increased along with the increase of the thickness-wavelength ratio, so that the energy leakage is increased, and the dispersion characteristic of the ratio of the x + z component along with the thickness-wavelength ratio is utilized, so that the acoustic wave can be propagated with low loss at a small value of the thickness-wavelength ratio.
Fig. 12 is a schematic diagram of the displacement mode shape of the horizontal shear wave in the heterostructure of the foreign substrate under different thickness-wavelength ratios in real space provided by the embodiment of the present application. Fig. 12 (a) to 12 (e) show changes in acoustic mode shapes when the thickness-wavelength ratio is reduced from 0.425 to 0.085, respectively. As can be seen from fig. 12, although the energy slightly permeates toward the reflective grating as the thickness-wavelength ratio decreases, the magnitude of the displacement and the energy distribution of the target acoustic wave mode do not greatly differ depending on the thickness-wavelength ratio. Moreover, unlike the conventional lithium tantalate single crystal substrate in which the reflective grating has a strong reflection effect on the acoustic wave energy, the slight penetration of energy into the reflective grating in this lithium tantalate/sapphire hetero-substrate structure will cause the reflected acoustic wave energy to bounce back to the middle interdigital electrode, thereby reducing the scattering leakage. By transforming it into the wavenumber space by two-dimensional fourier transformation, the source of the loss and the variation of the components can also be clearly analyzed.
Fig. 13 is a schematic diagram of the mode shape variation of the total displacement of the horizontal shear wave in the heterostructure under different thickness-wavelength ratios in wavenumber space provided by an embodiment of the present application, fig. 14 is a schematic diagram of the mode shape variation of the y-component of the horizontal shear wave in the heterostructure under different thickness-wavelength ratios in wavenumber space provided by an embodiment of the present application, and fig. 15 is a schematic diagram of the mode shape of the x + z-component of the horizontal shear wave in the heterostructure under different thickness-wavelength ratios in wavenumber space provided by an embodiment of the present application. Fig. 13 (a) - (e), fig. 14 (a) - (e) and fig. 15 (a) - (e) show the mode shape change when the thickness-wavelength ratio is reduced from 0.425 to 0.085, respectively. In wavenumber space, two lines along the β z direction represent the principal mode of the target acoustic wave mode, which may represent shear horizontal waves, and bright spots inside the two lines may represent other waves. Fig. 13 (a) shows the total displacement of the shear horizontal wave in the β x- β z plane in the wavenumber space, i.e., the x, y, and z components of the target acoustic wave pattern, at a thickness-to-wavelength ratio of 0.425. The inner points of the lines correspond to fig. 14 and 15, respectively, except for the target acoustic wave mode. Fig. 14 shows the principal component y of the target acoustic wave mode in the β x- β z plane, the two bright spots in the middle are bulk waves in the sapphire of the supporting substrate except the target acoustic wave mode, fig. 15 shows the principal component x + z of the target acoustic wave mode in the β x- β z plane, and the single bright spot in the middle is the scattering of the x + z component into the supporting substrate at the discontinuity of the interdigital electrode and the reflective grating except the target acoustic wave mode. When the thickness-to-wavelength ratio is reduced from 0.425 to 0.085, there is no significant change in the total displacement and y-component, indicating that the target acoustic mode is well reflected, confined and utilized in this hetero-substrate structure. However, the bright points of scattering leakage of the x + z components are gradually weakened or even disappear, which shows that the scattering of the discontinuity of the interdigital electrode and the reflecting grating to the supporting substrate is gradually weakened along with the dispersion change of the thickness-wavelength ratio, so that the low-loss high-Q device can be obtained under the condition that the thickness-wavelength ratio with small value is designed in the heterogeneous substrate structure.
Adopt the resonator that this application embodiment provided, through selecting suitable piezoelectric film and little sound velocity scattering angle, anisotropic supporting substrate material, can directly kick-back the inside to piezoelectric film at the heterointerface with the energy of target sound wave, can reduce the internal leakage of thickness direction, and utilize the sound velocity-thickness wavelength of target sound wave to disperse the characteristics, through the ratio of the thickness of adjusting piezoelectric film and the periodic line width of interdigital electrode, can regulate and control the propagation characteristics such as infiltration of sound wave energy, scattering component ratio, can reduce boundary radiation and the oblique radiation that the electricity of interdigital transducer and reflecting grating is discontinuous and arouses, can effectively reduce the leakage component of boundary radiation and oblique radiation.
A specific embodiment of an acoustic filter according to the present application is described below. The acoustic filter may include the resonator described in the above embodiment, wherein the foreign substrate may include a support substrate having a small acoustic scattering angle and anisotropy, and a piezoelectric thin film disposed on the support substrate, and a hetero interface may be formed between the support substrate and the piezoelectric thin film. The vibration component of the target sound wave in at least one direction in the piezoelectric film has a characteristic of dispersion in sound velocity-thickness wavelength. The heterointerface can be used to reflect a target acoustic wave within the piezoelectric film back to the piezoelectric film. By selecting a proper piezoelectric film and a proper supporting substrate, the target sound wave can be directly reflected back to the inside of the piezoelectric film at a heterogeneous interface, the leakage in the thickness direction to the inside of a body can be reduced, and boundary radiation and oblique radiation caused by electrical discontinuity of an interdigital transducer and a reflecting grating can be reduced.
Fig. 16 (a) is a filter response for a certain frequency band, where 1 may represent a center frequency, 2 may represent an in-band insertion loss, 3 may represent a bandwidth, 4 may represent a band edge steepness, 5 may represent an out-of-band rejection, and 6 may represent a squareness. Fig. 16 (b) and (c) show the response of a filter constructed by resonators with different Q values, and it can be seen from fig. 16 (c) that a resonator with a high quality factor is obtained by regulating and controlling the vibration component to reduce loss, and that an acoustic filter is manufactured by using the high-quality resonator design, so that the in-band loss of the filter can be reduced, the band edge steepness and the squareness of the filter can be enhanced, and the problems of poor band edge steepness, serious loss, high power consumption and the like of the filter can be effectively solved.
It should be noted that: the foregoing sequence of the embodiments of the present application is for description only and does not represent the superiority and inferiority of the embodiments, and the specific embodiments are described in the specification, and other embodiments are also within the scope of the appended claims. In some cases, the constituent structures recited in the claims may be executed in accordance with the constituent structures in different embodiments and can achieve a desired result. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or order of connection, to achieve desirable results.
All the embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment is described with emphasis on differences from other embodiments.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A resonator, comprising: a foreign substrate and an electrode assembly disposed on the foreign substrate;
the heterogeneous substrate comprises a supporting substrate and a piezoelectric film arranged on the supporting substrate, the sound velocity scattering angle of the supporting substrate is smaller than a preset scattering angle threshold value, the elastic coefficient of the supporting substrate is anisotropic, and a heterogeneous interface is formed between the supporting substrate and the piezoelectric film;
vibration components of target sound waves in at least one direction in the piezoelectric film have the characteristic of sound velocity-thickness wavelength dispersion, wherein the characteristic of the thickness wavelength dispersion is that the sound velocity of the target sound waves is increased along with the reduction of the ratio of the thickness of the piezoelectric film to the wavelength of the sound waves;
the heterogeneous interface is used for rebounding the energy of the target sound wave in the piezoelectric film to the interior of the piezoelectric film.
2. The device of claim 1, wherein the sonic scattering angle of the support substrate satisfies the following formula
Where ω is angular frequency, ρ is density, k is wave vector, c 44 ，c 66 The elastic coefficient of anisotropy is, and θ is the scattering angle of sound velocity.
3. The device of claim 1, wherein the ratio of the thickness of the piezoelectric film to the periodic line width of the electrode assembly is in the interval [0.02,0.15 ].
4. The device according to claim 1, wherein the electrode assembly comprises a plurality of interdigital electrodes, and a restraining assembly is arranged at the end of each interdigital electrode in the plurality of interdigital electrodes;
the constraint component is used for increasing the acoustic velocity difference between the interdigital electrode and an air gap; the air gap is a gap between the end of the interdigital electrode and a bus bar of the interdigital electrode.
5. The device according to claim 4, characterized in that said constraining means are connected to the ends of each interdigital electrode; or;
the constraint component is arranged on the upper surface of the end part of each interdigital electrode.
6. The device according to claim 4, characterized in that the density of the material of said constraining means is greater than the density of the material of said interdigitated electrodes.
7. The device of claim 4,
the piezoelectric film is made of lithium niobate, lithium tantalate, aluminum nitride and zinc oxide;
the material of the supporting substrate comprises silicon, silicon carbide, sapphire, diamond and quartz;
the interdigital electrode is made of gold, platinum, silver, copper, aluminum and two or more alloys thereof.
8. The device according to claim 4, characterized in that the ratio of the thickness of the interdigital electrode to the periodic line width of the interdigital electrode is within the interval [0.04,0.1 ].
9. The device of claim 1, wherein the target acoustic wave comprises a shear horizontal wave, a symmetric quasi-lamb wave, a leaky longitudinal wave, an anti-symmetric quasi-lamb wave;
the vibration components in the target sound wave are not coupled with each other.
10. An acoustic filter, characterized in that it comprises a resonator according to any of claims 1-9.
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