CN113098426A - High-frequency low-loss filter, resonator and preparation method - Google Patents
High-frequency low-loss filter, resonator and preparation method Download PDFInfo
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- CN113098426A CN113098426A CN202110275349.6A CN202110275349A CN113098426A CN 113098426 A CN113098426 A CN 113098426A CN 202110275349 A CN202110275349 A CN 202110275349A CN 113098426 A CN113098426 A CN 113098426A
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 210000000746 body region Anatomy 0.000 claims abstract description 5
- 230000005611 electricity Effects 0.000 claims abstract description 4
- 238000003780 insertion Methods 0.000 abstract description 4
- 230000037431 insertion Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 230000001788 irregular Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a high-frequency low-loss filter, a resonator and a preparation method, which can effectively reduce insertion loss. The high-frequency low-loss filter provided by the invention comprises: a substrate; at least two effective resonance parts formed on the body region of the substrate; and a non-effective resonance section comprising: the substrate comprises a plurality of electrode plates formed on the peripheral area of the substrate, a plurality of connecting wires for connecting the electrode plates, and anchor structures connected between any two effective resonance parts, between the effective resonance parts and the electrode plates and between the effective resonance parts and the connecting wires for conducting electricity, wherein the thickness of the conducting structures in the non-effective resonance parts is larger than that of the conducting structures in the effective resonance parts.
Description
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a high-frequency low-loss filter, a resonator and a preparation method.
Technical Field
With the rapid development of wireless communication, wireless signals become more and more crowded, and new requirements of integration, miniaturization, low power consumption, high performance, low cost and the like are provided for a filter working in a radio frequency band. The traditional surface acoustic wave filter can not reach the technical indexes due to the limitation of frequency, bearing power and the like. Film Bulk Acoustic Resonators (FBARs) are becoming the focus of research in radio frequency filters due to their CMOS process compatibility, high quality factor (Q value), low loss, low temperature coefficient, and high power carrying capability.
Film Bulk Acoustic Wave resonators (FBARs) can be classified into cavity type, silicon back-etched type, and solid-state package type. The cavity type FBAR has a slightly higher Q value compared with a solid packaging type FBAR, the loss is small, and the electromechanical coupling coefficient is slightly higher; compared with the silicon back-etched FBAR, the mechanical stability and mechanical strength are good because the cavity type does not require removal of a large area of the substrate. The cavity-type FBAR is generally made of an electrode-piezoelectric film-electrode sandwich structure on a substrate silicon, and an air gap is etched between the upper surface of the substrate silicon and the lower surface of a lower electrode to form an air interface, which can confine acoustic energy in an FBAR substrate, thereby reducing the loss of the acoustic energy.
The principle of the film bulk acoustic resonator is that a piezoelectric effect of a piezoelectric film is utilized, an electric signal is applied between an upper electrode and a lower electrode, the piezoelectric effect of the piezoelectric film can generate an acoustic signal, the acoustic signal oscillates between the electrodes, the acoustic wave is divided into a thickness vibration mode and a transverse vibration mode, wherein the acoustic wave is reserved only in the thickness vibration mode meeting the total reflection condition of the acoustic wave, the acoustic wave in the transverse vibration mode is consumed, the reserved acoustic signal is converted into the electric signal to be output, and therefore frequency selection of the electric signal is achieved. With the arrival of the 5G/6G era, the requirements of ultrahigh frequency, large bandwidth and low loss are increasing, but in order to realize that the film bulk acoustic resonator works at high frequency, the thickness of an electrode and the thickness of a piezoelectric layer are very thin, so that the resistance of the electrode is increased, and large insertion loss is introduced when a filter is built.
Disclosure of Invention
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a high-frequency low-loss filter, a resonator, and a manufacturing method, which can effectively reduce insertion loss.
In order to achieve the purpose, the invention adopts the following scheme:
< Filter >
The invention provides a high-frequency low-loss filter, which is characterized by comprising: a substrate; at least two effective resonance parts formed on the body region of the substrate; and a non-effective resonance section comprising: the substrate comprises a plurality of electrode plates formed on the peripheral area of the substrate, a plurality of connecting wires for connecting the electrode plates, and anchor structures connected between any two effective resonance parts, between the effective resonance parts and the electrode plates and between the effective resonance parts and the connecting wires for conducting electricity, wherein the thickness of the conducting structures in the non-effective resonance parts is larger than that of the conducting structures in the effective resonance parts.
Preferably, the high-frequency low-loss filter provided by the invention can also have the following characteristics: the thickness of the conductive structure in the non-effective resonance part is 0.1-3 um greater than that of the conductive structure in the effective resonance part.
Further, the high-frequency low-loss filter provided by the invention can also have the following characteristics: the conductive structure in the non-effective resonance portion includes at least one of an electrode plate, a connection line, and an anchor structure.
Preferably, the high-frequency low-loss filter provided by the invention can also have the following characteristics: the conductive structure in the non-effective resonance part includes an electrode plate, a connection line and an anchor structure.
Preferably, the high-frequency low-loss filter provided by the invention can also have the following characteristics: the substrate is a silicon or sapphire substrate.
Preferably, the high-frequency low-loss filter provided by the invention can also have the following characteristics: the effective resonance part sequentially comprises a bottom electrode, a piezoelectric layer and a top electrode from bottom to top, wherein the bottom electrode and the top electrode are both metal films, and the metal films are any one of molybdenum, platinum, gold, silver and tungsten films; the piezoelectric layer is made of any one of AlN, ZnO and PZT piezoelectric films with C-axis orientation.
< resonator >
Further, the present invention also provides a high-frequency low-loss resonator, comprising: a substrate; an effective resonance part formed on the body region of the substrate; and a non-effective resonance section comprising: the resonator comprises a substrate, a plurality of electrode plates formed on the peripheral region of the substrate, a plurality of connecting wires connecting the electrode plates, and an anchor structure connected between the effective resonance part and the electrode plates and between the effective resonance part and the connecting wires for conducting electricity, wherein the thickness of the conducting structure in the ineffective resonance part is larger than that of the conducting structure in the effective resonance part.
Preferably, the high-frequency low-loss resonator provided by the invention can also have the following characteristics: the thickness of the conductive structure in the non-effective resonance part is 0.1-3 um greater than that of the conductive structure in the effective resonance part.
Further, the high-frequency low-loss resonator provided by the invention can also have the following characteristics: the conductive structure in the non-effective resonance portion includes at least one of an electrode plate, a connection line, and an anchor structure.
Preferably, the high-frequency low-loss resonator provided by the invention can also have the following characteristics: the conductive structure in the non-effective resonance part includes an electrode plate, a connection line and an anchor structure.
Preferably, the high-frequency low-loss resonator provided by the invention can also have the following characteristics: the substrate is a silicon or sapphire substrate.
Preferably, the high-frequency low-loss resonator provided by the invention can also have the following characteristics: the effective resonance part sequentially comprises a bottom electrode, a piezoelectric layer and a top electrode from bottom to top, wherein the bottom electrode and the top electrode are both metal films, and the metal films are any one of molybdenum, platinum, gold, silver and tungsten films; the bottom electrode and the top electrode can be patterned into a circle, an irregular pentagon, an ellipse or an irregular hexagon; the piezoelectric layer is made of any one of AlN, ZnO and PZT piezoelectric films with C-axis orientation.
< preparation method >
Further, the invention also provides a preparation method of the high-frequency low-loss filter/resonator, which is characterized by comprising the following steps: thinning the conductive structure in the effective resonance part to enable the thickness of the conductive structure in the effective resonance part to be smaller than that of the conductive structure in the non-effective resonance part; or the conductive structure in the non-effective resonance part is thickened, so that the thickness of the conductive structure in the non-effective resonance part is larger than that of the conductive structure in the effective resonance part.
Action and Effect of the invention
According to the high-frequency low-loss filter, the resonator and the preparation method, the problem of overlarge resistance caused by too thin conductive structures when the film bulk acoustic resonator and the resonator work at high frequency is solved by increasing the thickness of the conductive structures in the non-effective resonance parts and reducing the resistance of the electrodes, the quality factors of the resonator and the resonator are improved, the insertion loss is effectively reduced, and the working performance of the high-frequency filter and the resonator is improved.
Drawings
Fig. 1 is a top view of a high-frequency low-loss resonator according to a first embodiment of the present invention;
fig. 2 is a cross-sectional view of a high-frequency low-loss resonator according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view (a) and a top view (b) of a silicon substrate according to a first embodiment of the present invention;
FIG. 4 is a cross-sectional view (a) and a top view (b) of a silicon substrate after a trench is etched in accordance with a first embodiment of the present invention;
FIG. 5 is a cross-sectional view (a) and a top view (b) after depositing a sacrificial layer according to one embodiment of the present invention;
FIG. 6 is a cross-sectional view (a) and a top view (b) of a sacrificial layer polished by CMP in accordance with one embodiment of the present invention;
FIG. 7 is a cross-sectional view after depositing a bottom electrode metal film according to one embodiment of the present invention;
FIG. 8 is a cross-sectional view illustrating the patterning of the bottom electrode according to one embodiment of the present invention;
FIG. 9 is a cross-sectional view of the bottom electrode after etching a portion of the thickness of the electrode in the effective resonance area according to the first embodiment of the present invention;
FIG. 10 is a cross-sectional view of an AlN piezoelectric layer deposited in accordance with one embodiment of the invention;
FIG. 11 is a cross-sectional view after deposition of a top electrode film in accordance with one embodiment of the present invention;
FIG. 12 is a cross-sectional view of a top electrode being patterned according to one embodiment of the present invention;
FIG. 13 is a cross-sectional view of the top electrode after etching in accordance with one embodiment of the present invention;
FIG. 14 is a cross-sectional view of an Al electrode deposited in accordance with one embodiment of the present invention;
FIG. 15 is a cross-sectional view after etching a release hole in accordance with one embodiment of the present invention;
FIG. 16 is a cross-sectional view illustrating a sacrificial layer being etched to form a cavity according to one embodiment of the present invention;
fig. 17 is a top plan view of a high-frequency low-loss resonator according to a second embodiment of the present invention;
fig. 18 is a sectional view of a high-frequency low-loss resonator according to a second embodiment of the present invention.
Detailed Description
Specific embodiments of the high-frequency low-loss filter, the resonator, and the manufacturing method according to the present invention will be described in detail below with reference to the accompanying drawings.
< example one >
As shown in fig. 1 and 2, a high-frequency low-loss resonator 10 provided in the first embodiment includes a substrate 11, an effective resonance portion 12, and a non-effective resonance portion 13.
The central portion of the substrate 11 has a groove opened upward.
An effective resonance section 12 (piezoelectric oscillation stack section) is formed on the main area of the substrate 11, and the effective resonance section 12 includes, from bottom to top, a bottom electrode 121, a piezoelectric layer 122, and a top electrode 123 in this order. The recess in the substrate 11 and the effective resonance part 12 together enclose a cavity 14. The effective resonance part 12 is uniformly provided with release holes which are provided for preparing the cavity 14. In this embodiment, the patterned effective resonance portion 12 is an irregular pentagon.
The non-effective resonance section 13 is formed on the substrate 11 and includes six electrode plates 131, two connection lines 132, and two anchor structures 133. The six electrode plates 131 are uniformly distributed and formed on the peripheral region of the substrate 11, and lead out the bottom electrode 121 and the top electrode 123. Two connecting wires 132 connect the upper and lower rows of electrode plates 131. Two anchor structures 133 are connected between the effective resonance section 12 and the two electrode plates 131 located in the middle.
In the present embodiment, the thicknesses of the six electrode plates 131, the two connecting lines 132 and the two anchor structures 133 in the non-effective resonance part 13 are all greater than the thickness of the bottom electrode 121 in the effective resonance part 12 and are also all greater than the thickness of the top electrode 123, and the thickness of the conductive structure in the effective resonance part 12 is as thin as that in the prior art, such a structure enables the high-frequency low-loss resonator 10 to meet the requirements of ultrahigh frequency, large bandwidth and low loss.
Further, in this embodiment, a method for manufacturing the high-frequency low-loss resonator 10 with the above structure is also provided, which specifically includes the following steps:
1) as shown in fig. 3, a silicon substrate 11 is prepared;
4) as shown in fig. 4, a predetermined groove 11a is etched on the silicon substrate 11;
5) as shown in fig. 5, a sacrificial layer a is deposited in the groove 11a, and the chemical property of the material of the sacrificial layer a is different from that of the silicon substrate 11, so as to ensure that the substrate 11 is not affected during subsequent etching;
6) as shown in fig. 6, the excess sacrificial layer a material is removed by using a chemical mechanical polishing technique, so that the sacrificial layer a material just fills the silicon recess 11 a;
7) as shown in fig. 7 to 13, first, a bottom electrode 121 is deposited on the substrate 11 and the sacrificial layer a, patterning (irregular pentagon) is performed, and then an effective oscillation region electrode thinning etching operation is performed (the bottom electrode portion located in the effective resonance region is etched in the thickness direction, so that the bottom electrode portion located in the effective resonance region becomes thinner than the bottom electrode portion located in the ineffective resonance region, and the electrode portion located in the ineffective resonance region forms an anchor structure 133); next, a piezoelectric layer 122 is deposited on the bottom electrode 121, and patterning (irregular pentagon) is performed; subsequently, a top electrode 123 is deposited on the piezoelectric layer 122, patterning (irregular pentagon) is performed, and then an effective oscillation region electrode thinning etching operation (etching is performed on the top electrode portion located in the effective resonance region in the thickness direction so that the top electrode portion located in the effective resonance region becomes thinner than the electrode portion located in the non-effective resonance region, and the electrode portion located in the non-effective resonance region forms an anchor structure 133) is performed to form an effective resonance section 12;
8) as shown in fig. 14, the bottom electrode 121 and the top electrode 123 are led out to be connected to the electrode plate 131 through the anchor structure 133 (the electrode plate 131 is not shown); and is connected with the upper and lower rows of electrode plates 131 through a connecting wire 132;
9) as shown in fig. 15, a release hole 124 is etched on the effective resonance part 12;
10) as shown in fig. 16, the etching liquid or etching gas is introduced through the release holes to completely release the sacrificial layer a, thereby forming the cavity 14.
< example two >
As shown in fig. 17 and 18, the high-frequency low-loss filter 20 provided in the second embodiment includes a substrate 21, six effective resonance sections 22, and a non-effective resonance section 23.
The central region of the substrate 21 is provided with six upwardly open recesses, corresponding to the six effective resonance sections 22, respectively.
Six effective resonance sections 22 (piezoelectric oscillation stack sections) are formed on the main body area of the substrate 21, and each effective resonance section 22 includes, from bottom to top, a bottom electrode 221, a piezoelectric layer 222, and a top electrode 223 in this order. The recess in the substrate 21 and the effective resonance part 22 together enclose a cavity 24. The effective resonance part 22 is uniformly provided with release holes which are provided for preparing the cavity 24. In this embodiment, the patterned effective resonant portion 22 is an irregular pentagon.
The non-effective resonance section 23 is formed on the substrate 21, and includes six electrode plates 231, two connection lines 232, and ten anchor structures 233. Six electrode plates 231 are uniformly distributed and formed on the peripheral area of the substrate 21 to lead out the bottom electrode 221 and the top electrode 223. Two connecting wires 232 connect the upper and lower rows of electrode plates 231. Ten anchor structures 233 are connected between adjacent effective resonance sections 22, between the effective resonance sections 22 and the electrode plate 231, and between the effective resonance sections 22 and the connection lines 232.
In the present embodiment, the thicknesses of the six electrode plates 231, the two connecting lines 232 and the ten anchor structures 233 in the non-effective resonance part 23 are all greater than the thickness of the bottom electrode 221 in the effective resonance part 22, and are also all greater than the thickness of the top electrode 223, and the thickness of the conductive structure in the effective resonance part 22 is as thin as that in the prior art, such a structure enables the high-frequency low-loss filter 20 to meet the requirements of ultrahigh frequency, large bandwidth and low loss.
The above embodiments are merely illustrative of the technical solutions of the present invention. The high-frequency low-loss filter, the resonator and the manufacturing method according to the present invention are not limited to the description of the embodiments above, but the scope of the invention is defined by the claims. Any modification or supplement or equivalent replacement made by a person skilled in the art on the basis of this embodiment is within the scope of the invention as claimed in the claims.
Claims (10)
1. A high frequency low loss filter, comprising:
a substrate;
at least two effective resonance parts formed on a body region of the substrate; and
a non-operative resonance section comprising: a plurality of electrode plates formed on a peripheral region of the substrate, a plurality of connection lines connecting the electrode plates, and an anchor structure electrically connected between any two of the effective resonance sections, between the effective resonance section and the electrode plates, and between the effective resonance section and the connection lines,
wherein the thickness of the conductive structure in the non-effective resonance part is larger than that of the conductive structure in the effective resonance part.
2. The high frequency low loss filter of claim 1, wherein:
wherein, the thickness of the conductive structure in the non-effective resonance part is 0.1-3 um greater than that of the conductive structure in the effective resonance part.
3. The high frequency low loss filter of claim 1, wherein:
wherein the conductive structure includes at least one of the electrode plate, the connection line, and the anchor structure.
4. The high frequency low loss filter of claim 1, wherein:
wherein the conductive structure in the non-effective resonance part includes the electrode plate, the connection line, and the anchor structure.
5. The high frequency low loss filter of claim 1, wherein:
wherein the effective resonance section includes a bottom electrode, a piezoelectric layer, and a top electrode.
6. A high frequency low loss resonator, comprising:
a substrate;
an effective resonance part formed on a body region of the substrate; and
a non-operative resonance section comprising: a plurality of electrode plates formed on a peripheral region of the substrate, a plurality of connection lines connecting the electrode plates, and an anchor structure connected between the effective resonance part and the electrode plates and between the effective resonance part and the connection lines for conducting electricity,
wherein the thickness of the conductive structure in the non-effective resonance part is larger than that of the conductive structure in the effective resonance part.
7. The high frequency low loss resonator of claim 1, wherein:
wherein, the thickness of the conductive structure in the non-effective resonance part is 0.1-3 um greater than that of the conductive structure in the effective resonance part.
8. The high frequency low loss resonator of claim 1, wherein:
wherein the conductive structure in the non-effective resonance part includes the electrode plate, the connection line, and the anchor structure.
9. The high frequency low loss filter of claim 1, wherein:
wherein the effective resonance section includes a bottom electrode, a piezoelectric layer, and a top electrode.
10. The high-frequency low-loss filter according to any one of claims 1 to 5 or the high-frequency low-loss resonator according to any one of claims 5 to 8, characterized in that:
thinning the conductive structure in the effective resonance part to enable the thickness of the conductive structure in the effective resonance part to be smaller than that of the conductive structure in the non-effective resonance part; or the conductive structure in the non-effective resonance part is thickened, so that the thickness of the conductive structure in the non-effective resonance part is larger than that of the conductive structure in the effective resonance part.
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