WO2020125214A1 - Multi-channel filter and components thereof, and electronic device - Google Patents

Multi-channel filter and components thereof, and electronic device Download PDF

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Publication number
WO2020125214A1
WO2020125214A1 PCT/CN2019/114250 CN2019114250W WO2020125214A1 WO 2020125214 A1 WO2020125214 A1 WO 2020125214A1 CN 2019114250 W CN2019114250 W CN 2019114250W WO 2020125214 A1 WO2020125214 A1 WO 2020125214A1
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Prior art keywords
resonator
parallel
series
resonators
channel filter
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PCT/CN2019/114250
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French (fr)
Chinese (zh)
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庞慰
边子鹏
郑云卓
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天津大学
诺思(天津)微系统有限责任公司
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Publication of WO2020125214A1 publication Critical patent/WO2020125214A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/644Coupled resonator filters having two acoustic tracks
    • H03H9/6456Coupled resonator filters having two acoustic tracks being electrically coupled
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves

Definitions

  • Embodiments of the present invention relate to the semiconductor field, and in particular, to a multi-channel filter, a component with the filter, and an electronic device with the above filter or component.
  • the RF filter plays a vital role. It can filter out-of-band interference and combined noise to satisfy the RF system and Communication protocol requirements for signal-to-noise ratio.
  • RF filters are mainly used in wireless communication systems, for example, radio frequency front-ends of base stations, mobile phones, computers, satellite communications, radar, electronic countermeasure systems, etc.
  • the main performance indicators of RF filters are insertion loss, out-of-band rejection, power capacity, linearity, device size and cost.
  • Good filter performance can improve the data transmission rate, life and reliability of the communication system to a certain extent. Therefore, the design of high-performance and simplified filters for wireless communication systems is crucial.
  • (A) in Fig. 5 is the electrical symbol of the piezoelectric acoustic wave resonator
  • (b) in Fig. 5 is its equivalent electrical model diagram.
  • the electrical model is simplified to Lm, Cm and C0 Resonant circuit composed.
  • the resonance conditions there are two resonance frequency points in the resonance circuit: one is fs when the impedance value of the resonance circuit reaches the minimum value, and fs is defined as the series resonance frequency point of the resonator; the other is when the impedance value of the resonance circuit reaches Fp at the maximum value, fp is defined as the parallel resonance frequency of the resonator. among them,
  • fs is smaller than fp.
  • the effective electromechanical coupling coefficient kt 2 eff of the resonator is defined, which can be expressed by fs and fp:
  • Figure 6 shows the relationship between resonator impedance and frequency. At a certain frequency, the greater the effective electromechanical coupling coefficient, the greater the frequency difference between fs and fp, that is, the farther away the two resonance frequencies are.
  • FIG. 10 shows a schematic cross-sectional view of a structure 600 of a thin film bulk acoustic resonator
  • 611 is a semiconductor substrate material
  • 601 is an air cavity obtained by etching
  • the bottom electrode 631 of the thin film bulk acoustic resonator is deposited on the semiconductor substrate 611
  • 621 is the piezoelectric thin film material
  • 641 is the top electrode
  • 651, 652, and 653 are the first layer mass load, the second layer mass load, and the third layer mass load of the film bulk acoustic resonator, respectively.
  • the dotted framed area is the overlapping area of 601 air cavity, 631 upper electrode, 641 lower electrode, mass load, and 621 piezoelectric layer. This area is the effective resonance area.
  • FIG. 11 shows a schematic cross-sectional view of an acoustic wave piezoelectric resonator structure 700 of a solid-state assembly, and materials with high acoustic impedance 771, 772, 773, 774 and low acoustic impedance materials 761, 762, 763 are alternately stacked instead of FIG. 10.
  • 601 air cavity the thickness of the high acoustic impedance material and the low acoustic impedance material is a quarter of the wavelength of the acoustic wave, and the number of high acoustic impedance material and low acoustic impedance material stacked can be freely selected.
  • 751, 752 and 753 are the first layer mass load, the second layer mass load and the third layer mass load of the solid-state assembly acoustic wave piezoelectric resonator, respectively.
  • the multi-channel filter is designed based on the bulk acoustic wave resonators of FIGS. 10 and 11, and the conventional multi-channel filter is obtained by cascading or paralleling multiple filters.
  • the first-stage ladder circuit network 101 and the second-stage ladder circuit network 102 are cascaded.
  • the first stage Both the ladder circuit network 101 and the second-stage ladder circuit network 102 respectively include four series resonators and three parallel resonators.
  • Such an approach will increase the out-of-band rejection of the multi-channel filter, but the insertion of the filter The damage is worse.
  • FIG. 1 shows that will increase the out-of-band rejection of the multi-channel filter, but the insertion of the filter The damage is worse.
  • the first-stage ladder circuit network 201 and the second-stage ladder circuit network 202 are connected in parallel.
  • the first-stage ladder circuit Both the type circuit network 201 and the second-stage ladder type circuit network 202 include four series resonators and three parallel resonators, respectively, such a method will obtain better insertion loss, but the out-of-band rejection is relatively poor.
  • the present invention proposes a multi-channel filter, including:
  • the series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2;
  • the parallel resonator branch has multiple parallel resonator units.
  • Each parallel resonator unit has n parallel resonators connected in series. One end of each parallel resonator unit is connected to the port of the corresponding series resonator unit, and the other end is suitable for In order to connect to the ground through the corresponding grounding inductance,
  • the i-th series resonator in all series resonator units constitutes the i-th series resonator.
  • the resonators in the i-th series resonator all have a series-i mass load, i is a natural number and 1 ⁇ i ⁇ n;
  • the i-th parallel resonator in all parallel resonator units constitutes the i-th group of parallel resonators, and the resonators in the i-th group of parallel resonators all have a parallel i-th mass load;
  • the mass loads of n series resonators are different from each other, and in the parallel resonator unit, the mass loads of n parallel resonators are different from each other.
  • the series resonance frequency of the i-th series resonator is greater than the series resonance frequency of the i-th parallel resonator.
  • the series resonance frequency of the i-th parallel resonator is greater than the series resonance frequency of the i+1th series resonator, where i ⁇ n-1.
  • the series resonance frequency of the i-th series resonator is greater than the parallel resonance frequency of the i-th parallel resonator.
  • Embodiments of the present invention also relate to a multi-channel filter, including:
  • the series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2;
  • the parallel resonator branch has multiple parallel resonator units, each parallel resonator unit has m parallel resonators connected in series, at least one parallel resonator unit has n parallel resonators, one end of each parallel resonator unit Connected to the port of the corresponding series resonator unit, the other end is suitable to be connected to the ground terminal through the corresponding grounding inductance, where m is a natural number less than n,
  • series resonators having the same mass load constitute a series resonator group, and the series resonator branch has n series resonator groups;
  • parallel resonators with the same mass load form a parallel resonator group, and the parallel resonator branch has n parallel resonator groups;
  • the series resonator group and the corresponding parallel resonator group respectively form a frequency pass band
  • the load mass corresponding to each resonator group is different from each other.
  • the resonance frequencies corresponding to the resonator groups are different from each other.
  • the thickness of the film layer based on the mass load is different and the mass load of the resonator is different.
  • the film thickness of different filters is a function of the frequency difference between the frequency pass bands and the bandwidth of the frequency pass band.
  • the passband bandwidth is determined by the thickness difference of the mass load film between the series resonator group and the corresponding parallel resonator group.
  • the above multi-channel filter further includes: a node connected between two parallel resonators of one parallel resonator branch and a node between two parallel resonators of another parallel resonator branch Of inductance.
  • one parallel resonator branch and the other parallel resonator branch are grounded together.
  • the resonator is a bulk acoustic wave piezoelectric resonator with an air gap or a solid-state bulk acoustic wave piezoelectric resonator with a Bragg impedance reflection layer.
  • the multi-channel filter has an input/output port, and an impedance matching device is provided between the input/output port and the series resonator branch.
  • the impedance matching device is a passive device, and the passive device includes an inductor and a transmission line, and implementation methods of the passive device include bonding wires, chip integrated passive devices (IPD), package carrier integration, or Discrete devices.
  • a grounding inductance is provided at the input/output port of the multi-channel filter.
  • An embodiment of the present invention also relates to a multi-channel filter assembly, including at least two of the above multi-channel filters, wherein: the at least two multi-channel filters are connected in cascade, or the at least two multi-channel filters The devices are connected in parallel.
  • Embodiments of the present invention also relate to an electronic device having the above-mentioned multi-channel filter or the above-mentioned multi-channel filter component.
  • This patent proposes a circuit architecture of a multi-channel filter for devices such as thin-film bulk acoustic resonators and solid-state bulk acoustic piezoelectric resonators.
  • This circuit architecture utilizes a mass load to implement a multi-channel filter on a single die In this way, the size of the device can be reduced by nearly twice, so that the miniaturization of the device can be better achieved; at the same time, the number of grounding inductors required for the design will be doubled, and the design and manufacturing are greatly reduced. The complexity greatly reduces the production cost.
  • FIG. 1 is a schematic structural diagram of a dual-channel filter in the prior art, in which a dual-channel filter design is implemented by cascading two filters;
  • FIG. 2 is a schematic structural diagram of a dual-channel filter in the prior art, in which a dual-channel filter design is implemented by connecting two filters in parallel;
  • 3-1, 3-2, 3-3, 3-4, and 3-5 are schematic diagrams of the structure of a dual-channel filter according to an exemplary embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a three-channel filter according to an exemplary embodiment of the present invention.
  • FIG. 5 is the electrical symbol of the piezoelectric acoustic wave resonator, and (b) in FIG. 5 is its equivalent electrical model diagram;
  • FIG. 6 is the impedance frequency characteristic curve of the resonator shown in FIG. 5;
  • Figure 7-1 shows the impedance frequency characteristic curve based on the resonator in Figure 3 operating at different frequencies
  • Fig. 7-2 (a) exemplarily shows a series resonator unit of a dual-channel filter with a single mass load, and (b) exemplarily shows a parallel resonator of a dual-channel filter with a single mass load unit;
  • MagZ_Series corresponds to the impedance amplitude frequency characteristic curve of the 7-2(a) series resonator unit
  • MagZ_Shunt corresponds to the impedance amplitude frequency characteristic curve of the 7-2(b) parallel resonator unit
  • S21 is The transmission characteristic curve of the dual-channel filter with a single die of mass load
  • FIG. 8a schematically shows a frequency characteristic curve of input-output transmission based on the circuit shown in FIG. 3;
  • FIG. 8b schematically shows an enlargement of the frequency characteristic curve based on the input and output transmission of the circuit shown in FIG. 3;
  • FIG. 8c schematically shows a frequency characteristic curve based on the reflection coefficients of the input port and the output port of the circuit shown in FIG. 3;
  • FIG. 9a schematically shows an input-output transmission frequency characteristic curve based on the circuit shown in FIG. 4;
  • 9b schematically shows an enlargement of the input-output transmission frequency characteristic curve based on the circuit shown in FIG. 4;
  • 9c schematically shows a frequency characteristic curve based on the reflection coefficients of the input port and the output port of the circuit shown in FIG. 4;
  • FIG. 10 is a schematic cross-sectional view of the structure of a thin film bulk acoustic resonator
  • FIG. 11 is a schematic cross-sectional view of the structure of a solid-state assembly acoustic wave piezoelectric resonator
  • FIG. 12 is a schematic diagram of an exemplary form of a series resonator unit in a series resonator branch according to an embodiment of the present invention.
  • FIG. 3 is a circuit diagram 300 of a multi-channel filter with a compound ladder structure.
  • T1 is the input terminal of the dual-channel filter
  • T2 is the output terminal of the dual-channel filter.
  • the input and output terminals are ports for external signals connected to the dual-channel filter.
  • the first series resonator and the second series resonator are connected in parallel, and then connected in series.
  • the series first resonator has a series first series resonance frequency fss1 and a series first parallel resonance frequency fsp1
  • the series second resonator has a series second series resonance frequency fss2 and a series second parallel resonance frequency fsp2; and is located in a parallel path position 1.
  • Parallel first resonator P10 and parallel second resonator P11 are connected in series
  • parallel first resonator P20 and parallel second resonator P21 are connected in series
  • parallel first resonator P30 and parallel second resonator P31 are connected in series
  • Parallel first resonators P10, P20, P30 have parallel first series resonance frequency fps1 and parallel first parallel resonance frequency fpp1
  • parallel second resonators P11, P21, P31 have parallel second series resonance frequency fps2 and parallel second parallel Resonant frequency fpp2.
  • the resonance frequency relationship of the first series resonator, the second series resonator, the first parallel resonator, and the second parallel resonator is shown in Figure 7-1, where fps2 ⁇ fss2 ⁇ fps1 ⁇ fss1.
  • the resonance frequencies of the resonance frequencies of the series first resonator, the series second resonator, the parallel first resonator, and the parallel second resonator are as follows: series first resonator, A first resonator in parallel, a second resonator in series, and a second resonator in parallel.
  • (a) is a series resonator unit, including a series first resonator and a series second resonator.
  • the second series resonator is equivalent to a capacitor in the resonance frequency band of the first series resonator, so that under the action of the second series resonator, the series first parallel resonance frequency of the series first resonator moves to a low frequency band, and the series first A series resonant frequency remains the same; in the same way, the series second parallel resonant frequency of the series second resonator moves to a lower frequency band, and the series second series resonant frequency does not change.
  • (b) is a parallel resonator unit, including a parallel first resonator, a parallel second resonator and a second inductor.
  • the parallel second resonator and the second inductance act on the parallel first resonator in combination, thereby affecting the parallel first series resonance frequency of the parallel first resonator, the parallel first parallel resonance frequency is unchanged; similarly, the parallel first resonator Combined with the second inductance, it acts on the parallel second resonator, thereby affecting the parallel second series resonance frequency of the parallel second resonator, and the parallel second parallel resonance frequency is unchanged.
  • MagZ_Series corresponds to the impedance amplitude-frequency characteristic curve of the 7-2(a) series resonator unit
  • MagZ_Shunt corresponds to the impedance amplitude-frequency characteristic curve of the 7-2(b) parallel resonator unit
  • S21 is the mass The transmission characteristic curve of a dual-channel filter loaded with a single die.
  • the impedance of the parallel resonator unit is a minimum value, and the signal is almost all short-circuited to ground, so the left transmission zero point of the low-frequency passband of the dual-channel filter appears at the fps2 point;
  • the impedance of the parallel resonator unit is the largest.
  • the parallel branch is open, the signal does not flow to the ground, and the impedance of the series resonator unit is the smallest.
  • the signal passes through the series branch almost without loss;
  • the input signal frequency of the dual-channel filter is fsp2
  • the impedance of the series resonator unit is the maximum value, and the impedance of the parallel resonator unit is relatively Smaller, the signal is almost all short-circuited to ground, and the right transmission zero of the low-frequency passband of the dual-channel filter appears at the fsp2 point; therefore, the input signals with frequencies of fpp2 and fss2 are screened out by the dual-channel filter.
  • the impedance of the parallel resonator unit is a minimum value, and the signal is almost all short-circuited to ground, so the left transmission zero point of the high-frequency passband of the dual-channel filter appears at the fps1 point ;
  • the impedance of the parallel resonator unit is the largest.
  • the parallel branch is open, the signal will not flow to the ground, and the impedance of the series resonator unit is the smallest.
  • the series branch is short-circuited, and the signal passes through the series branch almost without loss;
  • the input signal frequency of the dual-channel filter is fsp1
  • the impedance of the series resonator unit is the maximum value
  • the impedance of the parallel resonator unit Relatively small the signal is almost completely short-circuited to ground, and the right transmission zero of the low-frequency passband of the dual-channel filter appears at the point fsp1; therefore, the input signals with frequencies at fpp1 and fss1 are screened out by the dual-channel filter.
  • auxiliary inductors L1 and L2 are added to connect the series resonator to the input and output terminals of the filter, and auxiliary inductors L5, L6, and L7 are added to connect the parallel resonator to the ground.
  • the auxiliary inductance may be a bonding wire used for connecting the chip and the package carrier, or may be a metal conductor used for flip-chip welding the chip on the package carrier, such as a copper pillar, a solder ball, and the like.
  • the auxiliary inductors L1, L2, L5, L6, and L7 may also be referred to as second inductances, and the inductance of the second inductor is generally in the range of 0.1 nH to 0.8 nH.
  • a first inductor L3 for impedance matching is added near the input terminal T1
  • a third inductor for impedance matching is added near the output terminal T2
  • An inductor L4 the inductance values of the first inductor L3 and the first inductor L4 are in the range of 1nH-20nH, and further, in the range of 1nH-10nH. That is, the inductance value of the first inductor is larger than the inductance value of the second inductor.
  • the impedance matching device for user impedance matching is not limited to inductors, it can also include other passive devices, such as capacitors, transmission lines, etc., and the implementation of passive devices includes but is not limited to bonding wires, chip integrated passive devices ( IPD), package carrier integration, discrete devices, etc.
  • passive devices includes but is not limited to bonding wires, chip integrated passive devices ( IPD), package carrier integration, discrete devices, etc.
  • the first inductor and the second inductor may be implemented on a packaging substrate.
  • the first inductor and the second inductor may also be discrete inductor devices, which are provided outside the chip and integrated in a package carrier, and the package carrier includes the chip.
  • the second inductor includes a bonding wire for connecting the chip and the package carrier, or includes a metal conductor for flip-chip bonding the chip on the package carrier.
  • FIG. 8 is a graph of the amplitude-frequency response of the insertion loss and return loss of the multi-channel filter 300, where FIG. 8a is the insertion loss curve of the filter in a wide frequency band, and FIG. 8b is the insertion loss curve of the filter into the passband.
  • S11 is the return loss curve of the filter input port
  • S22 is the return loss curve of the filter output port.
  • FBAR bulk acoustic wave piezoelectric resonators
  • SMR solid-state body acoustic wave piezoelectric resonators
  • the traditional design method for dual-channel filters is to use two filter stages Connected or connected in parallel, the common shortcoming of the two methods is that the multi-channel filter has several channels and it is necessary to design several dies. Both the design and the manufacturing have certain complexity.
  • FBAR and SMR devices a new method for designing a multi-channel filter is proposed.
  • This circuit architecture can use a mass load to implement a multi-channel filter with a single die Design greatly reduces the complexity of design and manufacturing, and the size of the device is nearly doubled, which can better achieve the miniaturization of the device.
  • Figure 3-1 is an embodiment based on the present invention.
  • One or more parallel branches in the dual-channel filter can be composed of a single parallel first resonator or a single parallel second resonator, in this embodiment, the series first resonators S10, S20, S30, S40 and the parallel first resonance P10 and P20 form a high-band filter passband, and series second resonators S11, S21, S31, S41 and P11, P21, P31 form a low-band filter passband.
  • the smaller the number of filter series resonators the smaller the insertion loss and the worse the out-of-band rejection, so a similar architecture can be applied to design dual-channel filters with specific specifications, while also increasing to a certain extent Design flexibility.
  • Figure 3-2 is another embodiment based on the present invention.
  • series first resonators S10, S20, S30, S40 and parallel first resonators P10, P20, P30 form a high-band filter passband
  • series second resonators S11, S21, S31, S41, and P11, P21 and P31 form the low-band filter passband.
  • an inductance L8 is added between the connecting nodes of the parallel first resonator and the parallel second resonator of any two parallel branches.
  • the two branches connected by the inductor L8 are combined. Ground, so that the near-stopband rejection of the filter can be changed as required by the design specifications.
  • Figure 3-3 is another embodiment based on the present invention.
  • series first resonators S10, S20, S30, S40 and parallel first resonators P10, P20, P30 form a high-band filter passband
  • series second resonators S11, S21, S31, S41, and P11, P21 and P31 form the low-band filter passband.
  • any two-channel filter any two parallel branches are connected between the ground terminal nodes. The high-band filter and the low-band filter can realize the ground connection between the two parallel branches at the same time.
  • Figure 3-4 is another embodiment based on the present invention. This embodiment may be composed of two dual-channel filter dies working in different frequency bands to realize a four-channel filter.
  • Figures 3-5 are another embodiment based on the present invention. This embodiment cascades two dual-channel filters (die1, die2). When two dies work in different frequency bands, a four-channel filter design is realized; when two dies work in the same frequency band, ultra-high Dual-channel filter design with out-of-band rejection.
  • FIG. 4 is a schematic diagram of another embodiment 400 based on the present invention.
  • T1 is the input terminal of the filter
  • T2 is the output terminal of the filter.
  • the input and output terminals are ports for external signals connected to the dual-channel filter.
  • the third resonators S10, S20, S30, and S40, the first series resonator, the second series resonator, and the third series resonator are connected in parallel, and then connected in series.
  • the series first resonator has a series first series resonance frequency fss1 and a series first parallel resonance frequency fsp1
  • the series second resonator has a series second series resonance frequency fss2 and a series second parallel resonance frequency fsp2
  • the series third resonator has Series third series resonance frequency fss3 and series third parallel resonance frequency fsp3
  • parallel first resonators P10, P20, P30 located at the position of the parallel path and drawn from certain nodes on the series path, parallel second resonator P11 , P21, P31, and the parallel third resonators P12, P22, P32
  • one end of the parallel first resonator P10 is connected to the node between the series first resonator S12 and the series first resonator S22
  • One end of P20 is connected to the node between the series first resonator S22 and the first series resonator S32
  • Parallel first resonator P10, parallel second resonator P11 and parallel third resonator P12 are connected in series
  • parallel first resonator P20, parallel second resonator P21 and parallel third resonator P22 are connected in series
  • parallel A resonator P30, a parallel second resonator P31 and a parallel third resonator P32 are connected in series.
  • Parallel first resonators P10, P20, P30 have parallel first series resonance frequency fps1 and parallel first parallel resonance frequency fpp1
  • parallel second resonators P11, P21, P31 have parallel second series resonance frequency fps2 and parallel second parallel Resonance frequency fpp2
  • parallel third resonators P12, P22, P32 have parallel third series resonance frequency fps3 and parallel third parallel resonance frequency fpp3, series first resonator, series second resonator, series third resonator, parallel
  • the resonance frequency relationship of the first resonator, the parallel second resonator, and the parallel third resonator is fps3 ⁇ fss3 ⁇ fps2 ⁇ fss2 ⁇ fps1 ⁇ fss1.
  • the present invention proposes a multi-channel filter, including:
  • the series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2;
  • the parallel resonator branch has multiple parallel resonator units.
  • Each parallel resonator unit has n parallel resonators connected in series. One end of each parallel resonator unit is connected to the port of the corresponding series resonator unit, and the other end is suitable for In order to connect to the ground through the corresponding grounding inductance,
  • the i-th series resonator in all series resonator units constitutes the i-th series resonator.
  • the resonators in the i-th series resonator all have a series-i mass load, i is a natural number and 1 ⁇ i ⁇ n;
  • the i-th parallel resonator in all parallel resonator units constitutes the i-th group of parallel resonators, and the resonators in the i-th group of parallel resonators all have a parallel i-th mass load;
  • the mass loads of n series resonators are different from each other, and in the parallel resonator unit, the mass loads of n parallel resonators are different from each other.
  • the series resonance frequency of the i-th series resonator is greater than the series resonance frequency of the i-th parallel resonator.
  • the series resonance frequency of the i-th parallel resonator is greater than the series resonance frequency of the i+1th series resonator, where i ⁇ n-1.
  • the series resonance frequency of the i-th series resonator is greater than the parallel resonance frequency of the i-th parallel resonator.
  • the expression "i” is used for the expression of the i-th series resonator
  • the "piece” includes not only the case of one series resonator in practice, but also a plurality of series resonators. Equivalent to the case of a series resonator.
  • the series resonator located above in (a) of FIG. 7-2 may be a single series resonator S10 in FIG. 3 or two series resonators shown in FIG. 12 (of course There may be more) corresponding equivalent series resonators.
  • a similar understanding is made for the expression "a” in the i-th parallel resonator. These are all within the protection scope of the present invention.
  • the present invention also proposes a multi-channel filter, including:
  • the series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2;
  • the parallel resonator branch has multiple parallel resonator units, each parallel resonator unit has m parallel resonators connected in series, at least one parallel resonator unit has n parallel resonators, one end of each parallel resonator unit Connected to the port of the corresponding series resonator unit, the other end is suitable to be connected to the ground terminal through the corresponding grounding inductance, where m is a natural number less than n,
  • series resonators having the same mass load constitute a series resonator group, and the series resonator branch has n series resonator groups;
  • parallel resonators with the same mass load form a parallel resonator group, and the parallel resonator branch has n parallel resonator groups;
  • the series resonator group and the corresponding parallel resonator group respectively form a frequency pass band
  • the mass loads corresponding to the respective resonator groups are different from each other.
  • the resonance frequencies corresponding to the resonator groups are different from each other.
  • auxiliary inductors L1 and L2 are added to connect the series resonator to the input and output terminals of the filter, and auxiliary inductors L5, L6, and L7 are added to connect the parallel resonator to the ground.
  • the auxiliary inductance may be a bonding wire used for connecting the chip and the package carrier, or may be a metal conductor used for flip-chip welding the chip on the package carrier, such as a copper pillar, a solder ball, and the like.
  • the auxiliary inductors L1, L2, L5, L6, and L7 may also be called second inductances, and the inductance of the second inductor is generally in the range of 0.1 nH to 0.8 nH.
  • a first inductor L3 for impedance matching is added near the input terminal T1
  • a third inductor for impedance matching is added near the output terminal T2
  • An inductor L4 the inductance values of the first inductor L3 and the first inductor L4 are in the range of 1nH-20nH. That is, the inductance value of the first inductor is larger than the inductance value of the second inductor.
  • the impedance matching device for user impedance matching is not limited to inductors, it can also include other passive devices, such as capacitors, transmission lines, etc., and the implementation of passive devices includes but is not limited to bonding wires, chip integrated passive devices ( IPD), package carrier integration, discrete devices, etc.
  • passive devices includes but is not limited to bonding wires, chip integrated passive devices ( IPD), package carrier integration, discrete devices, etc.
  • FIG. 9 is a graph of the amplitude-frequency response of the insertion loss and return loss of the multi-channel filter 400, where FIG. 9a is the insertion loss curve of the filter in a wide frequency band, and FIG. 9b is the insertion loss curve of the filter into the passband.
  • S11 is the return loss curve of the filter input port
  • S22 is the return loss curve of the filter output port.
  • the n-channel filter is composed of a first series resonator, a second series resonator... ...
  • the nth series resonator is composed of the first parallel resonator, the second parallel resonator...the nth parallel resonator and will not be repeated here.
  • Embodiments of the present invention also relate to an electronic device, including the filter described above.
  • the electronic devices here include but are not limited to intermediate products such as radio frequency front-ends, filter amplification modules, and terminal products such as mobile phones, WIFI, and drones.

Abstract

A multi-channel filter, comprising: a series resonator branch comprising multiple series resonator units, each series resonator unit comprising n series resonators having different mass loads and connected in parallel, wherein n is a natural number not less than 2; and a parallel resonator branch comprising multiple parallel resonator units, wherein each parallel resonator unit comprises parallel resonators connected in series, and at least one parallel resonator unit comprises n parallel resonators having different mass loads. The ith series resonators in the series resonator units constitute an ith group of series resonators, resonators in the ith group of series resonators all have the ith mass loads connected in series, and i is a natural number and 1≤i≤n; the ith parallel resonators in all the parallel resonator units constitute an ith group of parallel resonators, and resonators in the ith group of parallel resonators all have the ith mass loads connected in parallel; the ith group of series resonators and the ith group of parallel resonators together constitute an ith frequency pass band; the mass loads of the n series resonators are different from one another, and the mass loads of the n parallel resonators are different from one another.

Description

多通道滤波器及其组件、电子设备Multi-channel filter and its components, electronic equipment 技术领域Technical field
本发明的实施例涉及半导体领域,尤其涉及一种多通道滤波器,一种具有该滤波器的组件,以及一种具有上述滤波器或者组件的电子设备。Embodiments of the present invention relate to the semiconductor field, and in particular, to a multi-channel filter, a component with the filter, and an electronic device with the above filter or component.
背景技术Background technique
随着无线通讯应用的发展,人们对于数据传输速率的要求越来越高,与数据传输速率相对应的是频谱资源的高利用率和频谱的复杂化。通信协议的复杂化对于射频系统的各种性能提出了严格的要求,在射频前端模块,射频滤波器起着至关重要的作用,它可以将带外干扰和合噪声滤除掉以满足射频系统和通信协议对于信噪比的要求。With the development of wireless communication applications, people have higher and higher requirements for data transmission rate. Corresponding to the data transmission rate is the high utilization rate of spectrum resources and the complexity of spectrum. The complexity of the communication protocol puts strict requirements on various performances of the RF system. In the RF front-end module, the RF filter plays a vital role. It can filter out-of-band interference and combined noise to satisfy the RF system and Communication protocol requirements for signal-to-noise ratio.
射频滤波器主要应用于无线通信系统,例如,基站的射频前端,移动电话,电脑,卫星通讯,雷达,电子对抗系统等等。射频滤波器的主要性能指标为插损、带外抑制、功率容量、线性度、器件尺寸和成本。良好的滤波器性能可以在一定程度上提高通信系统的数据传输速率、寿命及可靠性。所以对于无线通信系统高性能、简单化滤波器的设计是至关重要的。RF filters are mainly used in wireless communication systems, for example, radio frequency front-ends of base stations, mobile phones, computers, satellite communications, radar, electronic countermeasure systems, etc. The main performance indicators of RF filters are insertion loss, out-of-band rejection, power capacity, linearity, device size and cost. Good filter performance can improve the data transmission rate, life and reliability of the communication system to a certain extent. Therefore, the design of high-performance and simplified filters for wireless communication systems is crucial.
图5中的(a)是压电声波谐振器的电学符号,图5中的(b)是其等效电学模型图,在不考虑损耗项的情况下,电学模型简化为Lm、Cm和C0组成的谐振电路。根据谐振条件可知,该谐振电路存在两个谐振频点:一个是谐振电路阻抗值达到最小值时的fs,将fs定义为该谐振器的串联谐振频点;另一个是当谐振电路阻抗值达到最大值时的fp,将fp定义为该谐振器的并联谐振频点。其中,(A) in Fig. 5 is the electrical symbol of the piezoelectric acoustic wave resonator, and (b) in Fig. 5 is its equivalent electrical model diagram. Without considering the loss term, the electrical model is simplified to Lm, Cm and C0 Resonant circuit composed. According to the resonance conditions, there are two resonance frequency points in the resonance circuit: one is fs when the impedance value of the resonance circuit reaches the minimum value, and fs is defined as the series resonance frequency point of the resonator; the other is when the impedance value of the resonance circuit reaches Fp at the maximum value, fp is defined as the parallel resonance frequency of the resonator. among them,
Figure PCTCN2019114250-appb-000001
Figure PCTCN2019114250-appb-000001
并且,fs比fp要小。同时,定义了谐振器的有效机电耦合系数kt 2eff,它可以用fs和fp来表示: Also, fs is smaller than fp. At the same time, the effective electromechanical coupling coefficient kt 2 eff of the resonator is defined, which can be expressed by fs and fp:
Figure PCTCN2019114250-appb-000002
Figure PCTCN2019114250-appb-000002
图6示出了谐振器阻抗与频率之间的关系。在某一特定的频率下,有效机电耦合 系数越大,则fs和fp的频率差越大,即两个谐振频点离得越远。Figure 6 shows the relationship between resonator impedance and frequency. At a certain frequency, the greater the effective electromechanical coupling coefficient, the greater the frequency difference between fs and fp, that is, the farther away the two resonance frequencies are.
图10示出了薄膜体声波谐振器结构600的切面示意图,611是半导体衬底材料,601是通过刻蚀得到的空气腔,薄膜体声波谐振器的底电极631淀积于半导体衬底611之上,621为压电薄膜材料,641为顶电极,651、652和653分别为薄膜体声波谐振器的第一层质量负载、第二层质量负载和第三层质量负载。虚线框选区域为601空气腔、631上电极、641下电极、质量负载和621压电层的重叠区域,此区域为有效谐振区。10 shows a schematic cross-sectional view of a structure 600 of a thin film bulk acoustic resonator, 611 is a semiconductor substrate material, 601 is an air cavity obtained by etching, and the bottom electrode 631 of the thin film bulk acoustic resonator is deposited on the semiconductor substrate 611 Above, 621 is the piezoelectric thin film material, 641 is the top electrode, and 651, 652, and 653 are the first layer mass load, the second layer mass load, and the third layer mass load of the film bulk acoustic resonator, respectively. The dotted framed area is the overlapping area of 601 air cavity, 631 upper electrode, 641 lower electrode, mass load, and 621 piezoelectric layer. This area is the effective resonance area.
图11示出了固态装配体声波压电谐振器结构700的切面示意图,应用具有高声阻抗材料771、772、773、774和低声阻抗材料761、762、763交替堆叠来代替图10中的601空气腔,高声阻抗材料和低声阻抗材料的厚度为四分之一声波波长,高声阻抗材料和低声阻抗材料层叠的数目可以自由选择。751、752和753分别为固态装配体声波压电谐振器的第一层质量负载、第二层质量负载和第三层质量负载。FIG. 11 shows a schematic cross-sectional view of an acoustic wave piezoelectric resonator structure 700 of a solid-state assembly, and materials with high acoustic impedance 771, 772, 773, 774 and low acoustic impedance materials 761, 762, 763 are alternately stacked instead of FIG. 10. 601 air cavity, the thickness of the high acoustic impedance material and the low acoustic impedance material is a quarter of the wavelength of the acoustic wave, and the number of high acoustic impedance material and low acoustic impedance material stacked can be freely selected. 751, 752 and 753 are the first layer mass load, the second layer mass load and the third layer mass load of the solid-state assembly acoustic wave piezoelectric resonator, respectively.
基于图10和图11体声波谐振器设计多通道滤波器,传统的多通道滤波器是通过多个滤波器级联或者并联的方式得到的。如图1所示,为一通过滤波器级联方式得到的双通道滤波器100,第一级梯型电路网络101与第二级梯型电路网络102级联,在此例中,第一级梯型电路网络101和第二级梯型电路网络102都分别包含四个串联谐振器和三个并联谐振器,这样的做法会使多通道滤波器的带外抑制增大,但是滤波器的插损恶化较严重。如图2所示,为一通过滤波器并联的方式得到的双通道滤波器200,第一级梯型电路网络201与第二级梯型电路网络202并联,在此例中,第一级梯型电路网络201和第二级梯型电路网络202都分别包含四个串联谐振器和三个并联谐振器,这样的做法会得到较好的插损,但是带外抑制相对较差。The multi-channel filter is designed based on the bulk acoustic wave resonators of FIGS. 10 and 11, and the conventional multi-channel filter is obtained by cascading or paralleling multiple filters. As shown in FIG. 1, for a dual-channel filter 100 obtained by cascading filters, the first-stage ladder circuit network 101 and the second-stage ladder circuit network 102 are cascaded. In this example, the first stage Both the ladder circuit network 101 and the second-stage ladder circuit network 102 respectively include four series resonators and three parallel resonators. Such an approach will increase the out-of-band rejection of the multi-channel filter, but the insertion of the filter The damage is worse. As shown in FIG. 2, for a dual-channel filter 200 obtained by connecting filters in parallel, the first-stage ladder circuit network 201 and the second-stage ladder circuit network 202 are connected in parallel. In this example, the first-stage ladder circuit Both the type circuit network 201 and the second-stage ladder type circuit network 202 include four series resonators and three parallel resonators, respectively, such a method will obtain better insertion loss, but the out-of-band rejection is relatively poor.
此外,对于薄膜体声波谐振器和固态装配体声波压电谐振器类器件,上述两种设计方法共同的缺点是多通道滤波器有几个通道就要设计几颗管芯(die),无论是设计还是制造上都具有一定的复杂性。In addition, for thin-film bulk acoustic resonators and solid-state bulk acoustic resonator piezoelectric devices, the common disadvantage of the above two design methods is that the multi-channel filter has several channels and it is necessary to design several dies. Both design and manufacturing have certain complexity.
发明内容Summary of the invention
为缓解或解决使用现有技术中的上述问题的至少一个方面,提出本发明。In order to alleviate or solve at least one aspect of using the above problems in the prior art, the present invention is proposed.
本发明提出了一种多通道滤波器,包括:The present invention proposes a multi-channel filter, including:
串联谐振器支路,具有多个串联谐振器单元,每一个串联谐振器单元具有并联的 n个串联谐振器,其中n为不小于2的自然数;和The series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2; and
并联谐振器支路,具有多个并联谐振器单元,每个并联谐振器单元具有串联的n个并联谐振器,每一个并联谐振器单元的一端连接到对应串联谐振器单元的端口,另一端适于通过对应的接地电感连接到接地端,The parallel resonator branch has multiple parallel resonator units. Each parallel resonator unit has n parallel resonators connected in series. One end of each parallel resonator unit is connected to the port of the corresponding series resonator unit, and the other end is suitable for In order to connect to the ground through the corresponding grounding inductance,
其中:among them:
所有串联谐振器单元中的第i个串联谐振器构成第i组串联谐振器,第i组串联谐振器中的谐振器均具有串联第i质量负载,i为自然数且1≤i≤n;The i-th series resonator in all series resonator units constitutes the i-th series resonator. The resonators in the i-th series resonator all have a series-i mass load, i is a natural number and 1≤i≤n;
所有并联谐振器单元中的第i个并联谐振器构成第i组并联谐振器,第i组并联谐振器中的谐振器均具有并联第i质量负载;The i-th parallel resonator in all parallel resonator units constitutes the i-th group of parallel resonators, and the resonators in the i-th group of parallel resonators all have a parallel i-th mass load;
第i组串联谐振器与第i组并联谐振器共同构成第i频率通带;且The i-th series resonator and the i-th parallel resonator together constitute the i-th frequency passband; and
串联谐振器单元中,n个串联谐振器的质量负载彼此不同,且并联谐振器单元中,n个并联谐振器的质量负载彼此不同。In the series resonator unit, the mass loads of n series resonators are different from each other, and in the parallel resonator unit, the mass loads of n parallel resonators are different from each other.
可选的,第i个串联谐振器的串联谐振频率大于第i个并联谐振器的串联谐振频率。Optionally, the series resonance frequency of the i-th series resonator is greater than the series resonance frequency of the i-th parallel resonator.
可选的,第i个并联谐振器的串联谐振频率大于第i+1个串联谐振器的串联谐振频率,其中i≤n-1。Optionally, the series resonance frequency of the i-th parallel resonator is greater than the series resonance frequency of the i+1th series resonator, where i≤n-1.
可选的,第i个串联谐振器的串联谐振频率大于第i个并联谐振器的并联谐振频率。Optionally, the series resonance frequency of the i-th series resonator is greater than the parallel resonance frequency of the i-th parallel resonator.
本发明的实施例还涉及一种多通道滤波器,包括:Embodiments of the present invention also relate to a multi-channel filter, including:
串联谐振器支路,具有多个串联谐振器单元,每一个串联谐振器单元具有并联的n个串联谐振器,其中n为不小于2的自然数;和The series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2; and
并联谐振器支路,具有多个并联谐振器单元,每个并联谐振器单元具有串联的m个并联谐振器,至少一个并联谐振器单元具有n个并联谐振器,每一个并联谐振器单元的一端连接到对应串联谐振器单元的端口,另一端适于通过对应的接地电感连接到接地端,其中m为小于n的自然数,The parallel resonator branch has multiple parallel resonator units, each parallel resonator unit has m parallel resonators connected in series, at least one parallel resonator unit has n parallel resonators, one end of each parallel resonator unit Connected to the port of the corresponding series resonator unit, the other end is suitable to be connected to the ground terminal through the corresponding grounding inductance, where m is a natural number less than n,
其中:among them:
串联谐振器支路中,具有相同质量负载的串联谐振器构成一个串联谐振器组,所述串联谐振器支路具有n个串联谐振器组;In the series resonator branch, series resonators having the same mass load constitute a series resonator group, and the series resonator branch has n series resonator groups;
并联谐振器支路中,具有相同质量负载的并联谐振器构成一个并联谐振器组,所述并联谐振器支路具有n个并联谐振器组;In the parallel resonator branch, parallel resonators with the same mass load form a parallel resonator group, and the parallel resonator branch has n parallel resonator groups;
串联谐振器组与对应的并联谐振器组分别共同构成频率通带;The series resonator group and the corresponding parallel resonator group respectively form a frequency pass band;
各个谐振器组对应的负载质量彼此不同。The load mass corresponding to each resonator group is different from each other.
可选的,各谐振器组对应的谐振频率彼此之间不同。Optionally, the resonance frequencies corresponding to the resonator groups are different from each other.
可选的,在上述多通道滤波器中,基于质量负载的膜层厚度不同而谐振器的质量负载不同。进一步的,不同滤波器的膜层厚度为频率通带之间的频差以及频率通带的带宽的函数。Optionally, in the above multi-channel filter, the thickness of the film layer based on the mass load is different and the mass load of the resonator is different. Further, the film thickness of different filters is a function of the frequency difference between the frequency pass bands and the bandwidth of the frequency pass band.
通带带宽由串联谐振器组和对应并联谐振器组之间的质量负载膜层厚度差决定,定义n通道滤波器的频带由高到低分别为第1、2…i、i+1…n通带,其中i≤n-1,第i通带和第i+1通带之间的频差由第i并联谐振器组和第i+1串联谐振器组之间的质量负载膜层厚度差来决定,一般情况下,加质量负载谐振器的谐振器频率相对于质量负载膜层厚度呈线性变化,近似满足如下关系f ML=f 0-T ML*K,其中f 0为不加质量负载谐振器的谐振频率,f ML为加质量负载膜层厚度为T ML后的谐振器谐振频率,K为系数。 The passband bandwidth is determined by the thickness difference of the mass load film between the series resonator group and the corresponding parallel resonator group. The frequency bands that define the n-channel filter from high to low are 1, 2...i, i+1...n Pass band, where i≤n-1, the frequency difference between the i th pass band and the i+1 th pass band is determined by the thickness of the mass load film between the i th parallel resonator group and the i+1 th series resonator group Determined by the difference, in general, the resonator frequency of a mass-loaded resonator changes linearly with respect to the thickness of the mass-loaded film layer, which approximately meets the following relationship f ML = f 0 -T ML *K, where f 0 is without mass The resonant frequency of the load resonator, f ML is the resonant frequency of the resonator after adding the mass load film thickness to T ML , and K is the coefficient.
可选的,上述多通道滤波器还包括:连接在一个并联谐振器支路的两个并联谐振器之间的节点与另一个并联谐振器支路的两个并联谐振器之间的节点之间的电感。Optionally, the above multi-channel filter further includes: a node connected between two parallel resonators of one parallel resonator branch and a node between two parallel resonators of another parallel resonator branch Of inductance.
可选的,在上述多通道滤波器中,一个并联谐振器支路与另一个并联谐振器支路共接地端。Optionally, in the above multi-channel filter, one parallel resonator branch and the other parallel resonator branch are grounded together.
可选的,在上述多通道滤波器中,所述谐振器为具有空气隙的体声波压电谐振器或者具有布拉格阻抗反射层的固态装配体声波压电谐振器。Optionally, in the above multi-channel filter, the resonator is a bulk acoustic wave piezoelectric resonator with an air gap or a solid-state bulk acoustic wave piezoelectric resonator with a Bragg impedance reflection layer.
可选的,在上述多通道滤波器中,所述多通道滤波器具有输入/输出端口,输入/输出端口与串联谐振器支路之间设置有阻抗匹配器件。进一步的,所述阻抗匹配器件为无源器件,所述无源器件包括电感器、传输线,所述无源器件的实现方式包括键合线、芯片集成无源器件(IPD)、封装载体集成或分立器件。Optionally, in the above multi-channel filter, the multi-channel filter has an input/output port, and an impedance matching device is provided between the input/output port and the series resonator branch. Further, the impedance matching device is a passive device, and the passive device includes an inductor and a transmission line, and implementation methods of the passive device include bonding wires, chip integrated passive devices (IPD), package carrier integration, or Discrete devices.
可选的,在上述多通道滤波器中,所述多通道滤波器的输入/输出端口处设置有接地电感。Optionally, in the above multi-channel filter, a grounding inductance is provided at the input/output port of the multi-channel filter.
本发明的实施例还涉及一种多通道滤波器组件,包括至少两个上述的多通道滤波器,其中:所述至少两个多通道滤波器级联连接,或者所述至少两个多通道滤波器并联连接。An embodiment of the present invention also relates to a multi-channel filter assembly, including at least two of the above multi-channel filters, wherein: the at least two multi-channel filters are connected in cascade, or the at least two multi-channel filters The devices are connected in parallel.
本发明的实施例还涉及一种电子设备,具有上述的多通道滤波器或者上述的多通道滤波器组件。Embodiments of the present invention also relate to an electronic device having the above-mentioned multi-channel filter or the above-mentioned multi-channel filter component.
本专利针对例如薄膜体声波谐振器和固态装配体声波压电谐振器类器件,提出了一种多通道滤波器的电路架构,这种电路架构利用质量负载可在单一管芯实现多通道滤波器设计,如此,器件尺寸可缩小近一倍,从而可更好的实现器件的微型化;同时设计所需的接地电感数量也会倍减,而且在很大程度上减小了设计以及制造上的复杂度,大幅度减少了生产成本。This patent proposes a circuit architecture of a multi-channel filter for devices such as thin-film bulk acoustic resonators and solid-state bulk acoustic piezoelectric resonators. This circuit architecture utilizes a mass load to implement a multi-channel filter on a single die In this way, the size of the device can be reduced by nearly twice, so that the miniaturization of the device can be better achieved; at the same time, the number of grounding inductors required for the design will be doubled, and the design and manufacturing are greatly reduced. The complexity greatly reduces the production cost.
附图说明BRIEF DESCRIPTION
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点,图中相同的附图标记始终表示相同的部件,其中:The following description and drawings can better help to understand these and other features and advantages in the various embodiments disclosed in the present invention. The same reference numerals in the figures always denote the same parts, among which:
图1为现有技术中的双通道滤波器的结构示意图,其中通过两个滤波器级联实现双通道滤波器设计;FIG. 1 is a schematic structural diagram of a dual-channel filter in the prior art, in which a dual-channel filter design is implemented by cascading two filters;
图2为现有技术中的双通道滤波器的结构示意图,其中通过两个滤波器并联实现双通道滤波器设计;2 is a schematic structural diagram of a dual-channel filter in the prior art, in which a dual-channel filter design is implemented by connecting two filters in parallel;
图3、图3-1、图3-2、图3-3、图3-4、图3-5分别为根据本发明的示例性实施例的双通道滤波器的结构示意图;3, 3-1, 3-2, 3-3, 3-4, and 3-5 are schematic diagrams of the structure of a dual-channel filter according to an exemplary embodiment of the present invention;
图4为根据本发明的一个示例性实施例的三通道滤波器的结构示意图;4 is a schematic structural diagram of a three-channel filter according to an exemplary embodiment of the present invention;
图5中的(a)为压电声波谐振器的电学符号,图5中的(b)是其等效电学模型图;(A) in FIG. 5 is the electrical symbol of the piezoelectric acoustic wave resonator, and (b) in FIG. 5 is its equivalent electrical model diagram;
图6是图5所示谐振器的阻抗频率特性曲线;FIG. 6 is the impedance frequency characteristic curve of the resonator shown in FIG. 5;
图7-1示出了基于图3中工作于不同频率的谐振器的阻抗频率特性曲线;Figure 7-1 shows the impedance frequency characteristic curve based on the resonator in Figure 3 operating at different frequencies;
图7-2中,(a)示例性示出了质量负载单一管芯双通道滤波器的串联谐振器单元,(b)示例性示出了质量负载单一管芯双通道滤波器的并联谐振器单元;In Fig. 7-2, (a) exemplarily shows a series resonator unit of a dual-channel filter with a single mass load, and (b) exemplarily shows a parallel resonator of a dual-channel filter with a single mass load unit;
图7-3的示例性曲线图中,MagZ_Series对应7-2(a)串联谐振器单元的阻抗幅度频率特性曲线,MagZ_Shunt对应7-2(b)并联谐振器单元阻抗幅度频率特性曲线,S21为质量负载单一管芯双通道滤波器的传输特性曲线;In the exemplary graph of Figure 7-3, MagZ_Series corresponds to the impedance amplitude frequency characteristic curve of the 7-2(a) series resonator unit, MagZ_Shunt corresponds to the impedance amplitude frequency characteristic curve of the 7-2(b) parallel resonator unit, and S21 is The transmission characteristic curve of the dual-channel filter with a single die of mass load;
图8a示意性示出了基于图3所示电路的输入输出传输的频率特性曲线;FIG. 8a schematically shows a frequency characteristic curve of input-output transmission based on the circuit shown in FIG. 3;
图8b示意性示出了将基于图3所示电路的输入输出传输的频率特性曲线放大;FIG. 8b schematically shows an enlargement of the frequency characteristic curve based on the input and output transmission of the circuit shown in FIG. 3;
图8c示意性示出了基于图3所示电路的输入端口和输出端口的反射系数的频率 特性曲线;FIG. 8c schematically shows a frequency characteristic curve based on the reflection coefficients of the input port and the output port of the circuit shown in FIG. 3;
图9a示意性示出了基于图4所示电路的输入输出传输频率特性曲线;FIG. 9a schematically shows an input-output transmission frequency characteristic curve based on the circuit shown in FIG. 4;
图9b示意性示出了基于图4所示电路的输入输出传输频率特性曲线的放大;9b schematically shows an enlargement of the input-output transmission frequency characteristic curve based on the circuit shown in FIG. 4;
图9c示意性示出了基于图4所示电路的输入端口和输出端口的反射系数的频率特性曲线;9c schematically shows a frequency characteristic curve based on the reflection coefficients of the input port and the output port of the circuit shown in FIG. 4;
图10是薄膜体声波谐振器结构的剖面示意图;10 is a schematic cross-sectional view of the structure of a thin film bulk acoustic resonator;
图11是固态装配体声波压电谐振器结构的剖面示意图;11 is a schematic cross-sectional view of the structure of a solid-state assembly acoustic wave piezoelectric resonator;
图12为根据本发明的一个实施例的串联谐振器支路中串联谐振器单元的示例性形式的示意图。12 is a schematic diagram of an exemplary form of a series resonator unit in a series resonator branch according to an embodiment of the present invention.
具体实施方式detailed description
下面通过实施例,并结合附图,对本发明的技术方案作进一步具体的说明。在说明书中,相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释,而不应当理解为对本发明的一种限制。The technical solutions of the present invention will be further specifically described below through the embodiments and the accompanying drawings. In the description, the same or similar reference numerals indicate the same or similar components. The following description of the embodiments of the present invention with reference to the drawings is intended to explain the general inventive concept of the present invention, and should not be construed as a limitation of the present invention.
图3是一种复合梯形结构多通道滤波器的电路图300。T1为双通道滤波器的输入端子,T2为双通道滤波器的输出端子,该输入和输出端子为连接至双通道滤波器的外部信号的端口。在输入端子T1和输出端子T2之间,有一系列位于串联通路位置上、并联串联相接的串联第一谐振器S11、S21、S31、S41,串联第二谐振器S10、S20、S30、S40,串联第一谐振器与串联第二谐振器分别并联相接,然后再串联相接。串联第一谐振器具有串联第一串联谐振频率fss1和串联第一并联谐振频率fsp1,串联第二谐振器具有串联第二串联谐振频率fss2和串联第二并联谐振频率fsp2;以及位于并联通路位置、从串联通路上的某些节点引出的并联第一谐振器P10、P20、P30,和并联第二谐振器P11、P21、P31;并联第一谐振器P10的一端连接至串联第一谐振器S11和串联第一谐振器S21之间的节点;并联第一谐振器P20的一端连接至串联第一谐振器S21和串联第一谐振器S31之间的节点;并联第一谐振器P30的一端连接至串联第一谐振器S31和串联第一谐振器S41之间的节点。并联第一谐振器P10和并联第二谐振器P11串联相接,并联第一谐振器P20和并联第二谐振器P21串联相接,并联第一谐振器P30和并联第二谐振器P31串联相接。并联第一谐振器P10、P20、P30具有 并联第一串联谐振频率fps1和并联第一并联谐振频率fpp1,并联第二谐振器P11、P21、P31具有并联第二串联谐振频率fps2和并联第二并联谐振频率fpp2。FIG. 3 is a circuit diagram 300 of a multi-channel filter with a compound ladder structure. T1 is the input terminal of the dual-channel filter, and T2 is the output terminal of the dual-channel filter. The input and output terminals are ports for external signals connected to the dual-channel filter. Between the input terminal T1 and the output terminal T2, there are a series of first series resonators S11, S21, S31, S41 connected in series and connected in parallel in series, and second series resonators S10, S20, S30, S40 connected in series. The first series resonator and the second series resonator are connected in parallel, and then connected in series. The series first resonator has a series first series resonance frequency fss1 and a series first parallel resonance frequency fsp1, the series second resonator has a series second series resonance frequency fss2 and a series second parallel resonance frequency fsp2; and is located in a parallel path position 1. Parallel first resonators P10, P20, P30, and parallel second resonators P11, P21, P31 drawn from certain nodes on the series path; one end of the parallel first resonator P10 is connected to the series first resonator S11 And a node between the series first resonator S21; one end of the parallel first resonator P20 is connected to the node between the series first resonator S21 and the series first resonator S31; one end of the parallel first resonator P30 is connected to The node between the series first resonator S31 and the series first resonator S41. Parallel first resonator P10 and parallel second resonator P11 are connected in series, parallel first resonator P20 and parallel second resonator P21 are connected in series, parallel first resonator P30 and parallel second resonator P31 are connected in series . Parallel first resonators P10, P20, P30 have parallel first series resonance frequency fps1 and parallel first parallel resonance frequency fpp1, parallel second resonators P11, P21, P31 have parallel second series resonance frequency fps2 and parallel second parallel Resonant frequency fpp2.
串联第一谐振器、串联第二谐振器、并联第一谐振器和并联第二谐振器的谐振频率关系如图7-1所示,其中fps2<fss2<fps1<fss1。换言之,在图3的示例中,串联第一谐振器、串联第二谐振器、并联第一谐振器和并联第二谐振器的谐振频率的谐振频率由高到底分别为:串联第一谐振器、并联第一谐振器、串联第二谐振器、并联第二谐振器。The resonance frequency relationship of the first series resonator, the second series resonator, the first parallel resonator, and the second parallel resonator is shown in Figure 7-1, where fps2<fss2<fps1<fss1. In other words, in the example of FIG. 3, the resonance frequencies of the resonance frequencies of the series first resonator, the series second resonator, the parallel first resonator, and the parallel second resonator are as follows: series first resonator, A first resonator in parallel, a second resonator in series, and a second resonator in parallel.
如图7-2所示,(a)为串联谐振器单元,包含一个串联第一谐振器和一个串联第二谐振器。第二串联谐振器在第一串联谐振器谐振频段内等效为一个电容器,从而在第二串联谐振器的作用下,串联第一谐振器的串联第一并联谐振频率向低频段移动,串联第一串联谐振频率不变;同理,串联第二谐振器的串联第二并联谐振频率向低频段移动,串联第二串联谐振频率不变。(b)为并联谐振器单元,包含一个并联第一谐振器、一个并联第二谐振器和一个第二电感器。并联第二谐振器和第二电感综合作用于并联第一谐振器,从而影响并联第一谐振器的并联第一串联谐振频率,并联第一并联谐振频率不变;同理,并联第一谐振器和第二电感综合作用于并联第二谐振器,从而影响并联第二谐振器的并联第二串联谐振频率,并联第二并联谐振频率不变。如图7-3所示,其中MagZ_Series对应7-2(a)串联谐振器单元的阻抗幅度-频率特性曲线,MagZ_Shunt对应7-2(b)并联谐振器单元阻抗幅度频率特性曲线,S21为质量负载单一管芯双通道滤波器的传输特性曲线。当该双通道滤波器的输入信号频率为fps2时,并联谐振器单元的阻抗为极小值,信号几乎全部被短路到地,因此fps2点处出现双通道滤波器低频通带的左传输零点;当该双通道滤波器的输入信号频率在fpp2和fss2附近时,并联谐振器单元的阻抗最大,此时并联支路为开路状态,信号不会流经到地,串联谐振器单元阻抗最小,此时串联支路为短路状态,信号几乎无损地通过串联支路;当该双通道滤波器的输入信号频率为fsp2时,串联谐振器单元的阻抗为极大值,而并联谐振器单元的阻抗相对较小,信号几乎全部被短路到地,fsp2点处出现双通道滤波器低频通带的右传输零点;因此,频率在fpp2和fss2的输入信号被双通道滤波器筛选出来。当该双通道滤波器的输入信号频率为fps1时,并联谐振器单元的阻抗为极小值,信号几乎全部被短路到地,因此fps1点处出现双通道滤波器高频通带的左传输零点;当该双通道滤波器的输入信号频率在fpp1和fss1附近时,并联谐振器单元的阻抗最大,此时并联支路为开路状态,信号不会流经到地,串联谐振器单元阻 抗最小,此时串联支路为短路状态,信号几乎无损地通过串联支路;当该双通道滤波器的输入信号频率为fsp1时,串联谐振器单元的阻抗为极大值,而并联谐振器单元的阻抗相对较小,信号几乎全部被短路到地,fsp1点处出现双通道滤波器低频通带的右传输零点;因此,频率在fpp1和fss1的输入信号被双通道滤波器筛选出来。As shown in Figure 7-2, (a) is a series resonator unit, including a series first resonator and a series second resonator. The second series resonator is equivalent to a capacitor in the resonance frequency band of the first series resonator, so that under the action of the second series resonator, the series first parallel resonance frequency of the series first resonator moves to a low frequency band, and the series first A series resonant frequency remains the same; in the same way, the series second parallel resonant frequency of the series second resonator moves to a lower frequency band, and the series second series resonant frequency does not change. (b) is a parallel resonator unit, including a parallel first resonator, a parallel second resonator and a second inductor. The parallel second resonator and the second inductance act on the parallel first resonator in combination, thereby affecting the parallel first series resonance frequency of the parallel first resonator, the parallel first parallel resonance frequency is unchanged; similarly, the parallel first resonator Combined with the second inductance, it acts on the parallel second resonator, thereby affecting the parallel second series resonance frequency of the parallel second resonator, and the parallel second parallel resonance frequency is unchanged. As shown in Figure 7-3, where MagZ_Series corresponds to the impedance amplitude-frequency characteristic curve of the 7-2(a) series resonator unit, MagZ_Shunt corresponds to the impedance amplitude-frequency characteristic curve of the 7-2(b) parallel resonator unit, and S21 is the mass The transmission characteristic curve of a dual-channel filter loaded with a single die. When the input signal frequency of the dual-channel filter is fps2, the impedance of the parallel resonator unit is a minimum value, and the signal is almost all short-circuited to ground, so the left transmission zero point of the low-frequency passband of the dual-channel filter appears at the fps2 point; When the input signal frequency of the dual-channel filter is near fpp2 and fss2, the impedance of the parallel resonator unit is the largest. At this time, the parallel branch is open, the signal does not flow to the ground, and the impedance of the series resonator unit is the smallest. When the series branch is short-circuited, the signal passes through the series branch almost without loss; when the input signal frequency of the dual-channel filter is fsp2, the impedance of the series resonator unit is the maximum value, and the impedance of the parallel resonator unit is relatively Smaller, the signal is almost all short-circuited to ground, and the right transmission zero of the low-frequency passband of the dual-channel filter appears at the fsp2 point; therefore, the input signals with frequencies of fpp2 and fss2 are screened out by the dual-channel filter. When the input signal frequency of the dual-channel filter is fps1, the impedance of the parallel resonator unit is a minimum value, and the signal is almost all short-circuited to ground, so the left transmission zero point of the high-frequency passband of the dual-channel filter appears at the fps1 point ; When the input signal frequency of the dual-channel filter is near fpp1 and fss1, the impedance of the parallel resonator unit is the largest. At this time, the parallel branch is open, the signal will not flow to the ground, and the impedance of the series resonator unit is the smallest. At this time, the series branch is short-circuited, and the signal passes through the series branch almost without loss; when the input signal frequency of the dual-channel filter is fsp1, the impedance of the series resonator unit is the maximum value, and the impedance of the parallel resonator unit Relatively small, the signal is almost completely short-circuited to ground, and the right transmission zero of the low-frequency passband of the dual-channel filter appears at the point fsp1; therefore, the input signals with frequencies at fpp1 and fss1 are screened out by the dual-channel filter.
另外,为了将串联谐振器与滤波器的输入、输出端子相接,添加了辅助电感器L1和L2,为了将并联谐振器连接到接地点,添加了辅助电感器L5、L6、L7。上述辅助电感可以是用于芯片与封装载体相连接的键合线,也可以是用于将芯片倒装焊接在封装载体上的金属导体,如铜柱、锡球等。辅助电感器L1、L2、L5、L6、L7也可称为第二电感,该第二电感器的电感值一般在0.1nH--0.8nH范围内。In addition, auxiliary inductors L1 and L2 are added to connect the series resonator to the input and output terminals of the filter, and auxiliary inductors L5, L6, and L7 are added to connect the parallel resonator to the ground. The auxiliary inductance may be a bonding wire used for connecting the chip and the package carrier, or may be a metal conductor used for flip-chip welding the chip on the package carrier, such as a copper pillar, a solder ball, and the like. The auxiliary inductors L1, L2, L5, L6, and L7 may also be referred to as second inductances, and the inductance of the second inductor is generally in the range of 0.1 nH to 0.8 nH.
为了使滤波器在通带范围内都能达到较好的特性,在靠近输入端子T1附近添加了用于阻抗匹配的第一电感器L3,在靠近输出端子T2附近添加了用于阻抗匹配的第一电感器L4,第一电感L3和第一电感L4的电感值在1nH—20nH范围内,更进一步的,在1nH—10nH范围内。即第一电感器的电感值比第二电感器的电感值大。其中,用户阻抗匹配的阻抗匹配器件不限于电感器,其还可以包括其他无源器件,诸如电容器、传输线等,并且无源器件的实现方式包括但不限于键合线、芯片集成无源器件(IPD)、封装载体集成、分立器件等。In order for the filter to achieve better characteristics in the passband range, a first inductor L3 for impedance matching is added near the input terminal T1, and a third inductor for impedance matching is added near the output terminal T2 An inductor L4, the inductance values of the first inductor L3 and the first inductor L4 are in the range of 1nH-20nH, and further, in the range of 1nH-10nH. That is, the inductance value of the first inductor is larger than the inductance value of the second inductor. Among them, the impedance matching device for user impedance matching is not limited to inductors, it can also include other passive devices, such as capacitors, transmission lines, etc., and the implementation of passive devices includes but is not limited to bonding wires, chip integrated passive devices ( IPD), package carrier integration, discrete devices, etc.
在本发明中,根据本发明的一个实施例,所述第一电感和第二电感可在封装基板上实现。根据本发明的一个实施例,所述第一电感和第二电感也可以为分立的电感器件,设置在芯片外部并且集成在封装载体中,所述封装载体包括所述芯片。In the present invention, according to an embodiment of the present invention, the first inductor and the second inductor may be implemented on a packaging substrate. According to an embodiment of the present invention, the first inductor and the second inductor may also be discrete inductor devices, which are provided outside the chip and integrated in a package carrier, and the package carrier includes the chip.
根据本发明的一个实施例,所述第二电感器包括用于芯片与封装载体相连接的键合线、或者包括用于将所述芯片倒装焊接在所述封装载体上的金属导体。According to an embodiment of the present invention, the second inductor includes a bonding wire for connecting the chip and the package carrier, or includes a metal conductor for flip-chip bonding the chip on the package carrier.
图8是多通道滤波器300的插入损耗和回波损耗的幅度-频率响应曲线图,其中图8a是滤波器宽频带的插入损耗曲线,图8b是滤波器进通带插入损耗的曲线,图8c中S11是滤波器输入端口的回波损耗曲线,S22是滤波器输出端口的回波损耗曲线。对于具有空气隙的体声波压电谐振器(FBAR)或者具有布拉格阻抗反射层的固态装配体声波压电谐振器(SMR)类器件,双通道滤波器传统的设计方法是采用两个滤波器级联或是并联的方法,这两种方法共同的缺点是多通道滤波器有几个通道就要设计几颗管芯,无论是设计还是制造上都具有一定的复杂性。基于本发明的一个实施例的滤波器300,对于FBAR和SMR类器件,提出了一种新的设计多通道滤波器的方法,这种电路架构利用质量负载可单颗管芯实现多通道滤波器设计,在很大程度上减小了 设计以及制造上的复杂度,而且器件尺寸缩小近一倍,能够更好的实现器件的微型化。FIG. 8 is a graph of the amplitude-frequency response of the insertion loss and return loss of the multi-channel filter 300, where FIG. 8a is the insertion loss curve of the filter in a wide frequency band, and FIG. 8b is the insertion loss curve of the filter into the passband. In 8c, S11 is the return loss curve of the filter input port, and S22 is the return loss curve of the filter output port. For bulk acoustic wave piezoelectric resonators (FBAR) with air gaps or solid-state body acoustic wave piezoelectric resonators (SMR) devices with Bragg impedance reflection layers, the traditional design method for dual-channel filters is to use two filter stages Connected or connected in parallel, the common shortcoming of the two methods is that the multi-channel filter has several channels and it is necessary to design several dies. Both the design and the manufacturing have certain complexity. Based on the filter 300 of an embodiment of the present invention, for FBAR and SMR devices, a new method for designing a multi-channel filter is proposed. This circuit architecture can use a mass load to implement a multi-channel filter with a single die Design greatly reduces the complexity of design and manufacturing, and the size of the device is nearly doubled, which can better achieve the miniaturization of the device.
图3-1是基于本发明的一个实施例。双通道滤波器中一个或多个并联支路可由单个并联第一谐振器或单个并联第二谐振器单独组成,此实施例中串联第一谐振器S10、S20、S30、S40和并联第一谐振器P10、P20组成高频段滤波器通带,串联第二谐振器S11、S21、S31、S41和P11、P21、P31组成低频段滤波器通带。一般情况下,滤波器串联谐振器的数量越少,其插损越小,带外抑制越差,故可应用类似架构来设计具有特定指标要求的双通道滤波器,同时在一定程度上也增加了设计灵活性。Figure 3-1 is an embodiment based on the present invention. One or more parallel branches in the dual-channel filter can be composed of a single parallel first resonator or a single parallel second resonator, in this embodiment, the series first resonators S10, S20, S30, S40 and the parallel first resonance P10 and P20 form a high-band filter passband, and series second resonators S11, S21, S31, S41 and P11, P21, P31 form a low-band filter passband. In general, the smaller the number of filter series resonators, the smaller the insertion loss and the worse the out-of-band rejection, so a similar architecture can be applied to design dual-channel filters with specific specifications, while also increasing to a certain extent Design flexibility.
图3-2是基于本发明的又一实施例。此实施例中串联第一谐振器S10、S20、S30、S40和并联第一谐振器P10、P20、P30组成高频段滤波器通带,串联第二谐振器S11、S21、S31、S41和P11、P21、P31组成低频段滤波器通带。双通道滤波器中任意两个并联支路的并联第一谐振器和并联第二谐振器的连接节点之间加一电感L8,高频段滤波器工作时,电感L8相连的两个支路实现合地,从而可应设计指标要求改变滤波器近阻带抑制。Figure 3-2 is another embodiment based on the present invention. In this embodiment, series first resonators S10, S20, S30, S40 and parallel first resonators P10, P20, P30 form a high-band filter passband, and series second resonators S11, S21, S31, S41, and P11, P21 and P31 form the low-band filter passband. In the two-channel filter, an inductance L8 is added between the connecting nodes of the parallel first resonator and the parallel second resonator of any two parallel branches. When the high-band filter works, the two branches connected by the inductor L8 are combined. Ground, so that the near-stopband rejection of the filter can be changed as required by the design specifications.
图3-3是基于本发明的又一实施例。此实施例中串联第一谐振器S10、S20、S30、S40和并联第一谐振器P10、P20、P30组成高频段滤波器通带,串联第二谐振器S11、S21、S31、S41和P11、P21、P31组成低频段滤波器通带。双通道滤波器中任意两个并联支路接地端节点之间相连,高频段滤波器和低频段滤波器可同时实现两个并联支路之间的合地。Figure 3-3 is another embodiment based on the present invention. In this embodiment, series first resonators S10, S20, S30, S40 and parallel first resonators P10, P20, P30 form a high-band filter passband, and series second resonators S11, S21, S31, S41, and P11, P21 and P31 form the low-band filter passband. In any two-channel filter, any two parallel branches are connected between the ground terminal nodes. The high-band filter and the low-band filter can realize the ground connection between the two parallel branches at the same time.
图3-4是基于本发明的又一实施例。此实施例可由两颗工作于不同频段双通道滤波器管芯组成,实现四通道滤波器。Figure 3-4 is another embodiment based on the present invention. This embodiment may be composed of two dual-channel filter dies working in different frequency bands to realize a four-channel filter.
图3-5是基于本发明的又一实施例。此实施例将两颗双通道滤波器(die1、die2)级联,当两颗管芯工作于不同频段时实现四通道滤波器设计;当两颗管芯工作于相同频段时,可实现超高带外抑制的双通道滤波器设计。Figures 3-5 are another embodiment based on the present invention. This embodiment cascades two dual-channel filters (die1, die2). When two dies work in different frequency bands, a four-channel filter design is realized; when two dies work in the same frequency band, ultra-high Dual-channel filter design with out-of-band rejection.
图4是基于本发明的又一个实施例400的原理图。T1为滤波器的输入端子,T2为滤波器的输出端子。该输入和输出端子为连接至双通道滤波器的外部信号的端口。在输入端子T1和输出端子T2之间,有一系列位于串联通路位置上并联串联相接的串联第一谐振器S12、S22、S32、S42,串联第二谐振器S11、S21、S31、S41,串联第三谐振器S10、S20、S30、S40,串联第一谐振器、串联第二谐振器和串联第三谐振器分别并联相接,然后再串联相接。串联第一谐振器具有串联第一串联谐振频率fss1和串联第一并联谐振频率fsp1,串联第二谐振器具有串联第二串联谐振频率fss2和串 联第二并联谐振频率fsp2,串联第三谐振器具有串联第三串联谐振频率fss3和串联第三并联谐振频率fsp3;以及位于并联通路位置、从串联通路上的某些节点引出的并联第一谐振器P10、P20、P30,并联第二谐振器P11、P21、P31,和并联第三谐振器P12、P22、P32;并联第一谐振器P10的一端连接至串联第一谐振器S12和串联第一谐振器S22之间的节点;并联第一谐振器P20的一端连接至串联第一谐振器S22和串联第一谐振器S32之间的节点;并联第一谐振器P30的一端连接至串联第一谐振器S32和串联第一谐振器S42之间的节点。并联第一谐振器P10、并联第二谐振器P11和并联第三谐振器P12串联相接,并联第一谐振器P20、并联第二谐振器P21和并联第三谐振器P22串联相接,并联第一谐振器P30、并联第二谐振器P31和并联第三谐振器P32串联相接。并联第一谐振器P10、P20、P30具有并联第一串联谐振频率fps1和并联第一并联谐振频率fpp1,并联第二谐振器P11、P21、P31具有并联第二串联谐振频率fps2和并联第二并联谐振频率fpp2,并联第三谐振器P12、P22、P32具有并联第三串联谐振频率fps3和并联第三并联谐振频率fpp3,串联第一谐振器、串联第二谐振器、串联第三谐振器、并联第一谐振器、并联第二谐振器和并联第三谐振器的谐振频率关系为fps3<fss3<fps2<fss2<fps1<fss1。FIG. 4 is a schematic diagram of another embodiment 400 based on the present invention. T1 is the input terminal of the filter, and T2 is the output terminal of the filter. The input and output terminals are ports for external signals connected to the dual-channel filter. Between the input terminal T1 and the output terminal T2, there is a series of series-connected first resonators S12, S22, S32, S42 connected in series at the position of the series path, series-connected second resonators S11, S21, S31, S41, connected in series The third resonators S10, S20, S30, and S40, the first series resonator, the second series resonator, and the third series resonator are connected in parallel, and then connected in series. The series first resonator has a series first series resonance frequency fss1 and a series first parallel resonance frequency fsp1, the series second resonator has a series second series resonance frequency fss2 and a series second parallel resonance frequency fsp2, and the series third resonator has Series third series resonance frequency fss3 and series third parallel resonance frequency fsp3; and parallel first resonators P10, P20, P30 located at the position of the parallel path and drawn from certain nodes on the series path, parallel second resonator P11 , P21, P31, and the parallel third resonators P12, P22, P32; one end of the parallel first resonator P10 is connected to the node between the series first resonator S12 and the series first resonator S22; the parallel first resonator One end of P20 is connected to the node between the series first resonator S22 and the first series resonator S32; one end of the parallel first resonator P30 is connected to the node between the first series resonator S32 and the first series resonator S42 . Parallel first resonator P10, parallel second resonator P11 and parallel third resonator P12 are connected in series, parallel first resonator P20, parallel second resonator P21 and parallel third resonator P22 are connected in series, parallel A resonator P30, a parallel second resonator P31 and a parallel third resonator P32 are connected in series. Parallel first resonators P10, P20, P30 have parallel first series resonance frequency fps1 and parallel first parallel resonance frequency fpp1, parallel second resonators P11, P21, P31 have parallel second series resonance frequency fps2 and parallel second parallel Resonance frequency fpp2, parallel third resonators P12, P22, P32 have parallel third series resonance frequency fps3 and parallel third parallel resonance frequency fpp3, series first resonator, series second resonator, series third resonator, parallel The resonance frequency relationship of the first resonator, the parallel second resonator, and the parallel third resonator is fps3<fss3<fps2<fss2<fps1<fss1.
基于以上,本发明提出了一种多通道滤波器,包括:Based on the above, the present invention proposes a multi-channel filter, including:
串联谐振器支路,具有多个串联谐振器单元,每一个串联谐振器单元具有并联的n个串联谐振器,其中n为不小于2的自然数;和The series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2; and
并联谐振器支路,具有多个并联谐振器单元,每个并联谐振器单元具有串联的n个并联谐振器,每一个并联谐振器单元的一端连接到对应串联谐振器单元的端口,另一端适于通过对应的接地电感连接到接地端,The parallel resonator branch has multiple parallel resonator units. Each parallel resonator unit has n parallel resonators connected in series. One end of each parallel resonator unit is connected to the port of the corresponding series resonator unit, and the other end is suitable for In order to connect to the ground through the corresponding grounding inductance,
其中:among them:
所有串联谐振器单元中的第i个串联谐振器构成第i组串联谐振器,第i组串联谐振器中的谐振器均具有串联第i质量负载,i为自然数且1≤i≤n;The i-th series resonator in all series resonator units constitutes the i-th series resonator. The resonators in the i-th series resonator all have a series-i mass load, i is a natural number and 1≤i≤n;
所有并联谐振器单元中的第i个并联谐振器构成第i组并联谐振器,第i组并联谐振器中的谐振器均具有并联第i质量负载;The i-th parallel resonator in all parallel resonator units constitutes the i-th group of parallel resonators, and the resonators in the i-th group of parallel resonators all have a parallel i-th mass load;
第i组串联谐振器与第i组并联谐振器共同构成第i频率通带;且The i-th series resonator and the i-th parallel resonator together constitute the i-th frequency passband; and
串联谐振器单元中,n个串联谐振器的质量负载彼此不同,且并联谐振器单元中,n个并联谐振器的质量负载彼此不同。In the series resonator unit, the mass loads of n series resonators are different from each other, and in the parallel resonator unit, the mass loads of n parallel resonators are different from each other.
可选的,第i个串联谐振器的串联谐振频率大于第i个并联谐振器的串联谐振频 率。Optionally, the series resonance frequency of the i-th series resonator is greater than the series resonance frequency of the i-th parallel resonator.
可选的,第i个并联谐振器的串联谐振频率大于第i+1个串联谐振器的串联谐振频率,其中i≤n-1。Optionally, the series resonance frequency of the i-th parallel resonator is greater than the series resonance frequency of the i+1th series resonator, where i≤n-1.
可选的,第i个串联谐振器的串联谐振频率大于第i个并联谐振器的并联谐振频率。Optionally, the series resonance frequency of the i-th series resonator is greater than the parallel resonance frequency of the i-th parallel resonator.
需要专门指出的是,在本发明中,第i个串联谐振器的表述虽然使用了“个”,但是该“个”不仅包括实际中的一个串联谐振器的情形,也包括多个串联谐振器等效为一个串联谐振器的情形。具体的,在图7-2的(a)中的位于上方的串联谐振器,可以为图3中的单个串联谐振器S10,也可以是图12中示出的两个串联谐振器(当然也可以有更多个)对应的等效串联谐振器。对于第i个并联谐振器中的表述“个”也做类似的理解。这些均在本发明的保护范围之内。It should be specifically pointed out that in the present invention, although the expression "i" is used for the expression of the i-th series resonator, the "piece" includes not only the case of one series resonator in practice, but also a plurality of series resonators. Equivalent to the case of a series resonator. Specifically, the series resonator located above in (a) of FIG. 7-2 may be a single series resonator S10 in FIG. 3 or two series resonators shown in FIG. 12 (of course There may be more) corresponding equivalent series resonators. A similar understanding is made for the expression "a" in the i-th parallel resonator. These are all within the protection scope of the present invention.
相应的,本发明还提出了一种多通道滤波器,包括:Correspondingly, the present invention also proposes a multi-channel filter, including:
串联谐振器支路,具有多个串联谐振器单元,每一个串联谐振器单元具有并联的n个串联谐振器,其中n为不小于2的自然数;和The series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2; and
并联谐振器支路,具有多个并联谐振器单元,每个并联谐振器单元具有串联的m个并联谐振器,至少一个并联谐振器单元具有n个并联谐振器,每一个并联谐振器单元的一端连接到对应串联谐振器单元的端口,另一端适于通过对应的接地电感连接到接地端,其中m为小于n的自然数,The parallel resonator branch has multiple parallel resonator units, each parallel resonator unit has m parallel resonators connected in series, at least one parallel resonator unit has n parallel resonators, one end of each parallel resonator unit Connected to the port of the corresponding series resonator unit, the other end is suitable to be connected to the ground terminal through the corresponding grounding inductance, where m is a natural number less than n,
其中:among them:
串联谐振器支路中,具有相同质量负载的串联谐振器构成一个串联谐振器组,所述串联谐振器支路具有n个串联谐振器组;In the series resonator branch, series resonators having the same mass load constitute a series resonator group, and the series resonator branch has n series resonator groups;
并联谐振器支路中,具有相同质量负载的并联谐振器构成一个并联谐振器组,所述并联谐振器支路具有n个并联谐振器组;In the parallel resonator branch, parallel resonators with the same mass load form a parallel resonator group, and the parallel resonator branch has n parallel resonator groups;
串联谐振器组与对应的并联谐振器组分别共同构成频率通带;且The series resonator group and the corresponding parallel resonator group respectively form a frequency pass band; and
各个谐振器组对应的质量负载彼此不同。The mass loads corresponding to the respective resonator groups are different from each other.
可选的,各谐振器组对应的谐振频率彼此之间不同。Optionally, the resonance frequencies corresponding to the resonator groups are different from each other.
另外,为了将串联谐振器与滤波器的输入、输出端子相接,添加了辅助电感器L1和L2,为了将并联谐振器连接到接地点,添加了辅助电感器L5、L6、L7。上述辅助电感可以是用于芯片与封装载体相连接的键合线,也可以是用于将芯片倒装焊接在封装载体上的金属导体,如铜柱、锡球等。辅助电感器L1、L2、L5、L6、L7也可 称为第二电感,该第二电感器的电感值一般在0.1nH--0.8nH范围内。为了使滤波器在通带范围内都能达到较好的特性,在靠近输入端子T1附近添加了用于阻抗匹配的第一电感器L3,在靠近输出端子T2附近添加了用于阻抗匹配的第一电感器L4,第一电感L3和第一电感L4的电感值在1nH—20nH范围内。即第一电感器的电感值比第二电感器的电感值大。其中,用户阻抗匹配的阻抗匹配器件不限于电感器,其还可以包括其他无源器件,诸如电容器、传输线等,并且无源器件的实现方式包括但不限于键合线、芯片集成无源器件(IPD)、封装载体集成、分立器件等。In addition, auxiliary inductors L1 and L2 are added to connect the series resonator to the input and output terminals of the filter, and auxiliary inductors L5, L6, and L7 are added to connect the parallel resonator to the ground. The auxiliary inductance may be a bonding wire used for connecting the chip and the package carrier, or may be a metal conductor used for flip-chip welding the chip on the package carrier, such as a copper pillar, a solder ball, and the like. The auxiliary inductors L1, L2, L5, L6, and L7 may also be called second inductances, and the inductance of the second inductor is generally in the range of 0.1 nH to 0.8 nH. In order for the filter to achieve better characteristics in the passband range, a first inductor L3 for impedance matching is added near the input terminal T1, and a third inductor for impedance matching is added near the output terminal T2 An inductor L4, the inductance values of the first inductor L3 and the first inductor L4 are in the range of 1nH-20nH. That is, the inductance value of the first inductor is larger than the inductance value of the second inductor. Among them, the impedance matching device for user impedance matching is not limited to inductors, it can also include other passive devices, such as capacitors, transmission lines, etc., and the implementation of passive devices includes but is not limited to bonding wires, chip integrated passive devices ( IPD), package carrier integration, discrete devices, etc.
图9是多通道滤波器400的插入损耗和回波损耗的幅度-频率响应曲线图,其中图9a是滤波器宽频带的插入损耗曲线,图9b是滤波器进通带插入损耗的曲线,图9c中S11是滤波器输入端口的回波损耗曲线,S22是滤波器输出端口的回波损耗曲线。9 is a graph of the amplitude-frequency response of the insertion loss and return loss of the multi-channel filter 400, where FIG. 9a is the insertion loss curve of the filter in a wide frequency band, and FIG. 9b is the insertion loss curve of the filter into the passband. In 9c, S11 is the return loss curve of the filter input port, and S22 is the return loss curve of the filter output port.
另外,基于此发明更多通道滤波器的实现可以通过增加串联通路上的并联支路和并联通路上的串联支路来实现,n通道滤波器由第一串联谐振器、第二串联谐振器……第n串联谐振器和第一并联谐振器、第二并联谐振器……第n并联谐振器组成,在此不再赘述。In addition, the realization of more channel filters based on this invention can be realized by adding parallel branches on the series path and series branches on the parallel path. The n-channel filter is composed of a first series resonator, a second series resonator... ...The nth series resonator is composed of the first parallel resonator, the second parallel resonator...the nth parallel resonator and will not be repeated here.
此外,本发明中出现的“近似”、“相近”、“大约”等是指在本领域技术人员所公认的误差范围内。In addition, “approximately”, “close to”, “approximately” and the like appearing in the present invention mean within the error range recognized by those skilled in the art.
本发明的实施例也涉及一种电子设备,包括上述的滤波器。需要指出的是,这里的电子设备,包括但不限于射频前端、滤波放大模块等中间产品,以及手机、WIFI、无人机等终端产品。Embodiments of the present invention also relate to an electronic device, including the filter described above. It should be noted that the electronic devices here include but are not limited to intermediate products such as radio frequency front-ends, filter amplification modules, and terminal products such as mobile phones, WIFI, and drones.
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化,本发明的范围由所附权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that these embodiments can be changed without departing from the principle and spirit of the present invention. The appended claims and their equivalents are limited.

Claims (16)

  1. 一种多通道滤波器,包括:A multi-channel filter, including:
    串联谐振器支路,具有多个串联谐振器单元,每一个串联谐振器单元具有并联的n个串联谐振器,其中n为不小于2的自然数;和The series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2; and
    并联谐振器支路,具有多个并联谐振器单元,每个并联谐振器单元具有串联的n个并联谐振器,每一个并联谐振器单元的一端连接到对应串联谐振器单元的端口,另一端适于通过对应的接地电感连接到接地端,The parallel resonator branch has multiple parallel resonator units. Each parallel resonator unit has n parallel resonators connected in series. One end of each parallel resonator unit is connected to the port of the corresponding series resonator unit, and the other end is suitable for In order to connect to the ground through the corresponding grounding inductance,
    其中:among them:
    所有串联谐振器单元中的第i个串联谐振器构成第i组串联谐振器,第i组串联谐振器中的谐振器均具有串联第i质量负载,i为自然数且1≤i≤n;The i-th series resonator in all series resonator units constitutes the i-th series resonator. The resonators in the i-th series resonator all have a series-i mass load, i is a natural number and 1≤i≤n;
    所有并联谐振器单元中的第i个并联谐振器构成第i组并联谐振器,第i组并联谐振器中的谐振器均具有并联第i质量负载;The i-th parallel resonator in all parallel resonator units constitutes the i-th group of parallel resonators, and the resonators in the i-th group of parallel resonators all have a parallel i-th mass load;
    第i组串联谐振器与第i组并联谐振器共同构成第i频率通带;且The i-th series resonator and the i-th parallel resonator together constitute the i-th frequency passband; and
    串联谐振器单元中,n个串联谐振器的质量负载彼此不同,且并联谐振器单元中,n个并联谐振器的质量负载彼此不同。In the series resonator unit, the mass loads of n series resonators are different from each other, and in the parallel resonator unit, the mass loads of n parallel resonators are different from each other.
  2. 根据权利要求1所述的多通道滤波器,其中:The multi-channel filter according to claim 1, wherein:
    第i个串联谐振器的串联谐振频率大于第i个并联谐振器的串联谐振频率。The series resonance frequency of the i-th series resonator is greater than the series resonance frequency of the i-th parallel resonator.
  3. 根据权利要求2所述的多通道滤波器,其中:The multi-channel filter according to claim 2, wherein:
    第i个并联谐振器的串联谐振频率大于第i+1个串联谐振器的串联谐振频率,其中i≤n-1。The series resonance frequency of the i-th parallel resonator is greater than the series resonance frequency of the i+1th series resonator, where i≤n-1.
  4. 根据权利要求2或3所述的多通道滤波器,其中:The multi-channel filter according to claim 2 or 3, wherein:
    第i个串联谐振器的串联谐振频率大于第i个并联谐振器的并联谐振频率。The series resonance frequency of the i-th series resonator is greater than the parallel resonance frequency of the i-th parallel resonator.
  5. 一种多通道滤波器,包括:A multi-channel filter, including:
    串联谐振器支路,具有多个串联谐振器单元,每一个串联谐振器单元具有并联的n个串联谐振器,其中n为不小于2的自然数;和The series resonator branch has a plurality of series resonator units, and each series resonator unit has n series resonators connected in parallel, where n is a natural number not less than 2; and
    并联谐振器支路,具有多个并联谐振器单元,每个并联谐振器单元具有串联的m个并联谐振器,至少一个并联谐振器单元具有n个并联谐振器,每一个并联谐振器单元的一端连接到对应串联谐振器单元的端口,另一端适于通过对应的接地电感连接到接地端,其中m为小于n的自然数,其中:The parallel resonator branch has multiple parallel resonator units, each parallel resonator unit has m parallel resonators connected in series, at least one parallel resonator unit has n parallel resonators, one end of each parallel resonator unit Connected to the port of the corresponding series resonator unit, the other end is adapted to be connected to the ground terminal through a corresponding grounding inductance, where m is a natural number less than n, where:
    串联谐振器支路中,具有相同质量负载的串联谐振器构成一个串联谐振器组,所述串联谐振器支路具有n个串联谐振器组;In the series resonator branch, series resonators having the same mass load constitute a series resonator group, and the series resonator branch has n series resonator groups;
    并联谐振器支路中,具有相同质量负载的并联谐振器构成一个并联谐振器组,所述并联谐振器支路具有n个并联谐振器组;In the parallel resonator branch, parallel resonators with the same mass load form a parallel resonator group, and the parallel resonator branch has n parallel resonator groups;
    串联谐振器组与对应的并联谐振器组分别共同构成频率通带;The series resonator group and the corresponding parallel resonator group respectively form a frequency pass band;
    各个谐振器组对应的质量负载彼此不同。The mass loads corresponding to the respective resonator groups are different from each other.
  6. 根据权利要求1或5所述的多通道滤波器,其中:The multi-channel filter according to claim 1 or 5, wherein:
    各谐振器组对应的谐振频率彼此之间不同。The resonance frequency corresponding to each resonator group is different from each other.
  7. 根据权利要求1或5所述的多通道滤波器,其中:The multi-channel filter according to claim 1 or 5, wherein:
    基于质量负载的膜层厚度不同而谐振器的质量负载不同。The thickness of the film layer based on the mass load is different and the mass load of the resonator is different.
  8. 根据权利要求6所述的多通道滤波器,其中:The multi-channel filter according to claim 6, wherein:
    不同滤波器的膜层厚度为频率通带之间的频差以及频率通带的带宽的函数。The film thickness of different filters is a function of the frequency difference between the frequency passbands and the bandwidth of the frequency passband.
  9. 根据权利要求1或5所述的多通道滤波器,还包括:The multi-channel filter according to claim 1 or 5, further comprising:
    连接在一个并联谐振器支路的两个并联谐振器之间的节点与另一个并联谐振器支路的两个并联谐振器之间的节点之间的电感。The inductance between a node connected between two parallel resonators of one parallel resonator branch and a node between two parallel resonators of another parallel resonator branch.
  10. 根据权利要求1或5所述的多通道滤波器,其中:The multi-channel filter according to claim 1 or 5, wherein:
    一个并联谐振器支路与另一个并联谐振器支路共接地端。One parallel resonator branch and the other parallel resonator branch are grounded together.
  11. 根据权利要求1或5所述的多通道滤波器,其中:The multi-channel filter according to claim 1 or 5, wherein:
    所述谐振器为具有空气隙的体声波压电谐振器或者具有布拉格阻抗反射层的固态装配体声波压电谐振器。The resonator is a bulk acoustic wave piezoelectric resonator with an air gap or a solid-state bulk acoustic wave piezoelectric resonator with a Bragg impedance reflection layer.
  12. 根据权利要求1或5所述的多通道滤波器,其中:The multi-channel filter according to claim 1 or 5, wherein:
    所述多通道滤波器具有输入/输出端口,输入/输出端口与串联谐振器支路之间设置有阻抗匹配器件。The multi-channel filter has an input/output port, and an impedance matching device is provided between the input/output port and the series resonator branch.
  13. 根据权利要求12所述的多通道滤波器,其中:The multi-channel filter according to claim 12, wherein:
    所述阻抗匹配器件为无源器件,所述无源器件包括电感器、传输线,所述无源器件的实现方式包括键合线、芯片集成无源器件(IPD)、封装载体集成或分立器件。The impedance matching device is a passive device, and the passive device includes an inductor and a transmission line. The implementation of the passive device includes a bonding wire, a chip integrated passive device (IPD), a package carrier integrated, or a discrete device.
  14. 根据权利要求1或5所述的多通道滤波器,其中:The multi-channel filter according to claim 1 or 5, wherein:
    所述多通道滤波器的输入/输出端口处设置有接地电感。A grounding inductance is provided at the input/output port of the multi-channel filter.
  15. 一种多通道滤波器组件,包括至少两个根据权利要求1-10中任一项所述的多通道滤波器,其中:所述至少两个多通道滤波器级联连接,或者所述至少两个多通道滤波器并联连接。A multi-channel filter assembly comprising at least two multi-channel filters according to any one of claims 1-10, wherein: the at least two multi-channel filters are connected in cascade, or the at least two A multi-channel filter is connected in parallel.
  16. 一种电子设备,具有根据权利要求1-14中任一项所述的多通道滤波器或者根据权利要求15所述的多通道滤波器组件。An electronic device having the multi-channel filter according to any one of claims 1-14 or the multi-channel filter component according to claim 15.
PCT/CN2019/114250 2018-12-18 2019-10-30 Multi-channel filter and components thereof, and electronic device WO2020125214A1 (en)

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