CN103873010A - Piezoelectric film bulk acoustic resonator and preparation method thereof - Google Patents
Piezoelectric film bulk acoustic resonator and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a piezoelectric film bulk acoustic resonator and a preparation method thereof. The resonator comprises a substrate, an air cavity, a bottom electrode layer, a piezoelectric layer and a top electrode layer, wherein grapheme is used as the electrode layers of the device; a support layer is not needed in the structure of the device, and the air cavity is formed between the grapheme bottom electrode layer and a groove of the substrate; the piezoelectric layer is arranged on the bottom electrode layer, and the top electrode layer is arranged on the piezoelectric layer. A preparation process of a sacrificial layer is adopted, so the dependence of the traditional process on high-precision chemical-mechanical polishing equipment is overcome, the grinding time is shortened, and the flat surface of sacrificial layer is quickly obtained. The piezoelectric film bulk acoustic resonator has the advantages that the structure is novel, the high Q (quality) value and high electromechanical coupling coefficient can be obtained, and the piezoelectric film bulk acoustic resonator can be applied to the manufacturing of filters, duplexes and multiplexes in subsequent radio frequency communication systems, and can also be combined with different sensitive films to manufacture high-performance sensors.
Description
Technical field
The invention belongs to radio-frequency micro electromechanical system technical field, particularly a kind of novel piezoelectric thin-film bulk acoustic wave resonator and preparation method thereof.
Background technology
In recent years, along with the development of wireless communication system, increasing function is required to focus in same system.The development trend of wireless communication system multifunction, miniaturization to be applied to radio-frequency devices wherein proposed microminiaturized, can integrated, high applying frequency, the requirement such as high-performance, low manufacturing cost.Along with the development of radio-frequency micro electromechanical manufacturing technology, the thin film bulk acoustic resonator based on piezoelectric effect becomes the solution of wireless communication system filtering chip gradually because of its excellent performance.Compared with traditional SAW (Surface Acoustic Wave) filter (SAW), thin-film bulk acoustic wave filter has higher Q value, larger power capacity, lower insertion loss and advantage that can be integrated.Compared with the dielectric filter of filtering performance excellence, thin-film bulk acoustic wave filter has the development trend that less volume has adapted to current wireless communication system miniaturization.
The core texture of thin film bulk acoustic resonator is that piezoelectric membrane is sandwiched in the sandwich structure between the hearth electrode of top.By the piezoelectric effect of piezoelectric membrane in device, device can be converted to mechanical energy by the electric energy of input, and in device, forms standing wave with the form of sound wave.Because the speed of sound wave is than the little several orders of magnitude of electromagnetic speed, therefore the size of thin film bulk acoustic resonator can be done littlely than traditional devices.At present, be usually used in having ZnO, AlN, PZT as the material of thin film bulk acoustic resonator piezoelectric layer.In these several piezoelectrics, AlN is because of its longitudinal wave velocity maximum, and chemical stability is high, power capacity large and can with standard CMOS process mutually compatible feature become at present the most frequently used piezoelectric film material.
Based on the difference of interface sound wave total reflection implementation, the structure of thin film bulk acoustic resonator is divided into cavity type and solid-state assembly type (SMR).Cavity type structure mainly contains two kinds: FBAR(Fig. 1), back of the body type at quarter (Fig. 2).Solid-state assembly type forms the total reflection of sound wave alternately with the acoustic impedance rete of four/wavelength thickness and low acoustic impedance rete, as shown in Figure 3.The thin film bulk acoustic resonator of back of the body type structure at quarter causes the mechanical strength of device very low owing to will etching away a large amount of substrates, is unfavorable for the practical application of device, therefore carries on the back quarter type thin film bulk acoustic resonator and has rarely had preparation.Solid-state assembly type thin film bulk acoustic resonator has good mechanical strength and larger power capacity makes it under large-power occasions, have more application.FBAR is owing to having high Q, low insertion loss, and high electromechanical coupling factor, is convenient to the integrated excellent properties of Denging, makes it become most widely used thin film bulk acoustic resonator.
Traditional F BAR structure as shown in Figure 1, is followed successively by supporting layer, hearth electrode, piezoelectric layer and top electrode on substrate.Sound wave is realized total reflection at the interface place of supporting layer and air chamber.First the manufacture craft of traditional F BAR etches hole on silicon substrate, fills sacrificial layer material in hole, and conventional sacrificial layer material is SiO
2.After sacrificial layer material deposition, device surface forms flat surface through chemico-mechanical polishing (CMP).Then continue to pass through magnetron sputtering deposition bottom electrode layer film on device surface, hearth electrode thin film photolithography goes out the follow-up continuous piezoelectric layer thin film that deposits of figure thereon.Making by lithography after piezoelectric layer figure, on piezoelectric layer, deposit top electrode film.Finally erode away a window by being dry-etched on piezoelectric layer, from the window etching, device sacrifice layer is discharged, after release, just complete the making of device.It is large that conventional films bulk acoustic wave resonator preparation technology exists sacrifice layer to discharge difficulty, needs the challenges such as high accuracy chemistry mechanical polishing device.For reducing preparation difficulty and the cost of thin film bulk acoustic resonator, improve device performance, many researchers have proposed corrective measure.Existing patent CN1373556 proposes for the benefit of preparation of sacrifice layer release aperture can increase raceway groove in device substrate.Patent US7140084 B2 proposes to improve device performance by reducing Film roughness.At present, by the device architecture after improving still existent defect as: 1. after sacrifice layer deposition, need high accuracy CMP equipment to grind for a long time, increased cost and process complexity prepared by device.2. in conventional films bulk acoustic wave resonator, have supporting layer, although supporting layer can increase the mechanical strength of device, it has reduced the electric property of device simultaneously.How to simplify the requirement of device to CMP technique, reduce device preparation cost, improving device performance becomes current thin film bulk acoustic wave resonator preparation technology's emphasis.
Summary of the invention
The object of this invention is to provide a kind of preparation method of piezoelectric film bulk acoustic wave resonator, thereby can effectively simplify film bulk acoustic resonator structure and preparation technology, improve device performance.
Technical scheme of the present invention is: a kind of piezoelectric film bulk acoustic wave resonator, its structure comprises substrate, air chamber, bottom electrode layer, piezoelectric layer and top electrode layer, on substrate, end face is provided with groove and bottom electrode layer, this groove and the bottom electrode layer on it form the air chamber of device, the contact-making surface of bottom electrode layer and air chamber has level and smooth border, piezoelectric layer is set on bottom electrode layer, top electrode layer is set on piezoelectric layer, described bottom electrode layer and top electrode layer are graphene layer.
Further, described substrate is silicon substrate, and piezoelectric layer is the aln layer with c-axis orientation.
Further, be provided with sacrifice layer and discharge window, sacrifice layer discharges window between bottom electrode layer, top electrode layer border and air chamber border.
Further, the degree of depth of described air chamber is 200nm-3 μ m.
Further, described bottom electrode layer and top electrode layer all have 1-10 layer graphite carbon-coating.
A preparation method for piezoelectric film bulk acoustic wave resonator, comprises following step:
A. on silicon substrate, make sacrifice layer figure by lithography, adopt to be dry-etched on substrate, to etch sacrifice layer groove;
B. adopt the method deposited amorphous sacrificial silicon layer of electron beam evaporation, control sedimentation time and obtain the sacrificial layer thickness needing;
C. remaining photoresist in dissolving step a, removes the amorphous silicon on the outer photoresist of sacrifice layer groove.Polishing is removed the residual amorphous silicon of sacrificial layer surface and is obtained even curface;
D. adopt the method for molecular beam epitaxy on sacrifice layer, to deposit Graphene bottom electrode layer and make hearth electrode figure by lithography, this electrode layer and the sacrifice layer below it form air chamber;
E. on hearth electrode by sputter growth of device piezoelectric layer and make piezoelectric layer figure by lithography, bottom electrode layer is exposed in one end of this piezoelectric layer;
F. the method growth of device top electrode layer by molecular beam epitaxy make top electrode figure by lithography on piezoelectric layer;
G. releasing sacrificial layer being dried.
Further, specifically comprise following step:
A. in surface of silicon, rotary coating photoresist, this silicon substrate can be (100), (110) or (111) orientation, use the method for photoetching that the photoresist in corresponding sacrifice layer region is removed, expose silicon substrate, the silicon substrate that uses the method etching of dry etching to expose, etching depth is 200nm-3 μ m, this sacrifice layer recess edge is level and smooth;
B. make the method deposited amorphous sacrificial silicon layer of deposited by electron beam evaporation, this sacrificial layer thickness is 300nm-3 μ m, and this sacrifice layer is greater than 100 ° of C in temperature, and deposition rate is less than 5/s, and base vacuum is less than 10
-3under the condition of Pa, deposition obtains, and sacrificial layer thickness is by sedimentation time control;
C. use remaining photoresist on acetone solution substrate, photoresist dissolved fall time the amorphous silicon film layer of adhering on it be also removed, use CMP to grind away a little burr residual on sacrifice layer and obtain smooth amorphous silicon sacrificial layer surface;
D. use the method deposition Graphene electrodes layer of molecular beam epitaxy, this layer of electrode has 1-10 layer graphite carbon-coating, its thickness <10nm, and this Graphene electrodes layer is greater than 500 ° of C in temperature, graphite evaporation rate is less than 0.3nm/min, and base vacuum is lower than 5 × 10
-5under Pa condition, prepare, meanwhile, etch hearth electrode figure;
The AlN piezoelectric layer of one deck c-axis of e. growing on Graphene electrodes layer orientation, this AlN piezoelectric layer is at ammonia concentration >40%, power density >9W/cm
2under temperature >200 ° of C, obtained by the method deposition of rf magnetron sputtering, this piezoelectric layer border is greater than sacrifice layer border and exposed portions serve bottom electrode layer, use the method for wet etching to etch the figure of piezoelectric layer, the release window of device sacrifice layer is also etched out simultaneously, discharges window between boundary electrode and air chamber border;
F. use the method deposition device top electrode layer of steps d molecular beam epitaxy, and etch top electrode layer figure;
G. discharge device sacrifice layer dry.
The present invention compared with prior art tool has the following advantages:
1,, compared with conventional films bulk acoustic wave device preparation technology, this invention can significantly reduce the complexity of CMP technique in device preparation process.The preparation technology who uses this invention to propose only needs to grind away a little residual burr of sacrifice layer in above-mentioned steps 3, just can obtain smooth device surface.Overcome the requirement of traditional preparation technology to high accuracy CMP equipment, avoided long-time grinding to cause sacrifice layer to cross the appearance of throwing phenomenon simultaneously.
2, in device architecture of the present invention without the supporting layer using in traditional devices structure, and propose to use Graphene as the electrode layer of device, can greatly improve the performance of device.Than traditional electrode layer material, Graphene has higher conductivity, and larger conductive coefficient makes the device making have larger Q value and higher power capacity.Meanwhile, the very thin device that makes of Graphene electrodes can make higher frequency.Thin electrode has reduced the loss of sound wave in electrode, can effectively improve the electromechanical coupling factor of device.
3, the present invention can meet on market requirements such as radio-frequency devices high frequency, high power capacity, low-loss, high electromechanical coupling factor and miniaturizations.
Brief description of the drawings
Fig. 1 tradition cavity type film bulk acoustic resonator structure figure;
Fig. 2 tradition back of the body type film bulk acoustic resonator structure figure at quarter;
Fig. 3 conventional solid-state assembly type film bulk acoustic resonator structure figure;
Fig. 4 to Figure 10 is the preparation flow schematic diagram of the inventive method;
Fig. 4 is the device profile map that obtains pit after photoetching silicon substrate, and the dark part in pit both sides is photoresist;
Fig. 5 makes the device profile map after the method deposition of sacrificial layer of deposited by electron beam evaporation;
Fig. 6 uses acetone solution to fall device profile map after photoresist;
Fig. 7 device after polishing is removed device profile map after burr;
Device profile map after Fig. 8 molecular beam epitaxial growth Graphene hearth electrode photoetching;
Device profile map after Fig. 9 magnetron sputtering deposition c-axis orientation AlN film photoetching;
Device profile map after Figure 10 molecular beam epitaxial growth Graphene top electrode photoetching;
Figure 11 the present invention prepares cavity type thin film bulk acoustic resonator profile;
Figure 12 the present invention prepares cavity type thin film bulk acoustic resonator vertical view.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described:
A kind of piezoelectric film bulk acoustic wave resonator, its structure comprises substrate, air chamber, bottom electrode layer, piezoelectric layer and top electrode layer, on substrate, end face is provided with groove and bottom electrode layer, this groove and the bottom electrode layer on it form the air chamber of device, the contact-making surface of bottom electrode layer and air chamber has level and smooth border, piezoelectric layer is set on bottom electrode layer, top electrode layer is set on piezoelectric layer, described bottom electrode layer and top electrode layer are graphene layer, described substrate is silicon substrate, piezoelectric layer is the aln layer with c-axis orientation, be provided with sacrifice layer and discharge window, sacrifice layer discharges window and is positioned at bottom electrode layer, between top electrode layer border and air chamber border, the degree of depth of described air chamber is 200nm-3 μ m, described bottom electrode layer and top electrode layer all have 1-10 layer graphite carbon-coating.
As shown in figure 11, as shown in figure 12, its structure comprises 1 substrate to the vertical view of device to piezoelectric film bulk acoustic wave resonator section of the present invention, 2 bottom electrode layers, 3 air chambers, 4 piezoelectric layers, 5 top electrode layer, 6,7 sacrifice layer release aperture.
The specific embodiment of the invention is as follows:
1. use the method for photoetching that the photoresist in corresponding sacrifice layer region is removed in surface of silicon, expose silicon substrate.The silicon substrate that uses the method etching of dry etching to expose, etching depth can be between 200nm-3 μ m, as shown in Figure 4.Described surface of silicon can be (100), (110) or (111) orientation.
2. the method deposited amorphous sacrificial silicon layer that makes deposited by electron beam evaporation, this sacrificial layer thickness can be controlled in 300nm-3 μ m.This sacrifice layer is greater than 100 ° of C in temperature, and deposition rate is less than 5/s, and base vacuum is less than 10
-3under the condition of Pa, deposition obtains.Sacrificial layer thickness is by sedimentation time control, as shown in Figure 5.
3. use remaining photoresist on acetone solution substrate, photoresist dissolved fall time the amorphous silicon film layer of adhering on it be also removed, and on device surface, leave a little burr, as shown in Figure 6.
4. a little burr that uses chemico-mechanical polishing to grind away device surface obtains smooth device surface, as shown in Figure 7.Polishing fluid used is SiO
2suspension polishing liquid, milling time 5-10min, rotating speed is controlled at 30-60r/min.
5. use the method deposition Graphene electrodes layer of molecular beam epitaxy.This layer of electrode has 1-10 layer graphite carbon-coating, and its thickness is 5-10nm.This Graphene electrodes layer is greater than 500 ° of C in temperature, and graphite evaporation rate is less than 0.3nm/min, and base vacuum is lower than 5 × 10
-5under Pa condition, prepare.Meanwhile, etch hearth electrode figure, as shown in Figure 8.
6. the AlN piezoelectric layer of one deck c-axis of growing on Graphene electrodes layer orientation.This AlN piezoelectric layer is at ammonia concentration >40%, power density >9W/cm
2, under temperature >200 ° of C, obtained by the method deposition of rf magnetron sputtering.The piezoelectric layer thickness according to actual needs frequency of device determines.This piezoelectric layer border is greater than sacrifice layer border and exposed portions serve bottom electrode layer.Use the method for wet etching to etch the figure of piezoelectric layer, the release window of device sacrifice layer is also etched out simultaneously, discharges window between boundary electrode and air chamber border, as shown in Figure 9.
7. use the method deposition device top electrode layer of step 5 molecular beam epitaxy, and etch top electrode layer figure, as shown in figure 10.
8. releasing sacrificial layer dry, as shown in figure 11.
The above embodiment has only expressed the application's embodiment, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the application's protection range.It should be pointed out that for the person of ordinary skill of the art, not departing under the prerequisite of present techniques plan plot, can also make some distortion and improvement, these all belong to the application's protection range.
Claims (7)
1. a piezoelectric film bulk acoustic wave resonator, its structure comprises substrate, air chamber, bottom electrode layer, piezoelectric layer and top electrode layer, it is characterized in that: on substrate, end face is provided with groove and bottom electrode layer, this groove and the bottom electrode layer on it form the air chamber of device, the contact-making surface of bottom electrode layer and air chamber has level and smooth border, piezoelectric layer is set on bottom electrode layer, top electrode layer is set on piezoelectric layer, described bottom electrode layer and top electrode layer are graphene layer.
2. piezoelectric film bulk acoustic wave resonator according to claim 1, is characterized in that, described substrate is silicon substrate, and piezoelectric layer is the aln layer with c-axis orientation.
3. thin film bulk acoustic resonator according to claim 1, is characterized in that, is provided with sacrifice layer and discharges window, and sacrifice layer discharges window between bottom electrode layer, top electrode layer border and air chamber border.
4. piezoelectric film bulk acoustic wave resonator according to claim 1, is characterized in that, the degree of depth of described air chamber is 200nm-3 μ m.
5. piezoelectric film bulk acoustic wave resonator according to claim 1, is characterized in that, described bottom electrode layer and top electrode layer all have 1-10 layer graphite carbon-coating.
6. a preparation method for piezoelectric film bulk acoustic wave resonator, is characterized in that, comprises following step:
A. on silicon substrate, make sacrifice layer figure by lithography, adopt to be dry-etched on substrate, to etch sacrifice layer groove;
B. adopt the method deposited amorphous sacrificial silicon layer of electron beam evaporation, control sedimentation time and obtain the sacrificial layer thickness needing;
C. remaining photoresist in dissolving step a, removes the amorphous silicon on the outer photoresist of sacrifice layer groove, and polishing is removed the residual amorphous silicon of sacrificial layer surface and obtained even curface;
D. adopt the method for molecular beam epitaxy on sacrifice layer, to deposit Graphene bottom electrode layer and make hearth electrode figure by lithography, this electrode layer and the sacrifice layer below it form air chamber;
E. on hearth electrode by sputter growth of device piezoelectric layer and make piezoelectric layer figure by lithography, bottom electrode layer is exposed in one end of this piezoelectric layer;
F. the method growth of device top electrode layer by molecular beam epitaxy make top electrode figure by lithography on piezoelectric layer;
G. releasing sacrificial layer being dried.
7. a preparation method for thin film bulk acoustic resonator, is characterized in that, specifically comprises following step:
A. substrate can be in surface of silicon, rotary coating photoresist,
Use the method for photoetching that the photoresist in corresponding sacrifice layer region is removed, expose silicon substrate, the silicon substrate that uses the method etching of dry etching to expose, etching depth is 200nm-3 μ m, this sacrifice layer recess edge is level and smooth;
B. make the method deposited amorphous sacrificial silicon layer of deposited by electron beam evaporation, this sacrificial layer thickness is 300nm-3 μ m, and this sacrifice layer is greater than 100 ° of C in temperature, and deposition rate is less than 5/s, and base vacuum is less than 10
-3under the condition of Pa, deposition obtains, and sacrificial layer thickness is by sedimentation time control;
C. use remaining photoresist on acetone solution substrate, photoresist dissolved fall time the amorphous silicon film layer of adhering on it be also removed, use CMP to grind away a little burr residual on sacrifice layer and obtain smooth amorphous silicon sacrificial layer surface;
D. use the method deposition Graphene electrodes layer of molecular beam epitaxy, this layer of electrode has 1-10 layer graphite carbon-coating, its thickness <10nm, and this Graphene electrodes layer is greater than 500 ° of C in temperature, graphite evaporation rate is less than 0.3nm/min, and base vacuum is lower than 5 × 10
-5under Pa condition, prepare, meanwhile, etch hearth electrode figure;
The AlN piezoelectric layer of one deck c-axis of e. growing on Graphene electrodes layer orientation, this AlN piezoelectric layer is at ammonia concentration >40%, power density >9W/cm
2under temperature >200 ° of C, obtained by the method deposition of rf magnetron sputtering, this piezoelectric layer border is greater than sacrifice layer border and exposed portions serve bottom electrode layer, use the method for wet etching to etch the figure of piezoelectric layer, the release window of device sacrifice layer is also etched out simultaneously, discharges window between boundary electrode and air chamber border;
F. use the method deposition device top electrode layer of steps d molecular beam epitaxy, and etch top electrode layer figure;
G. discharge device sacrifice layer dry.
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