CN105262455B - A kind of thin film bulk acoustic wave resonator and its manufacturing method of high reliability - Google Patents
A kind of thin film bulk acoustic wave resonator and its manufacturing method of high reliability Download PDFInfo
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Abstract
This application discloses a kind of FBAR of high reliability (thin film bulk acoustic wave resonator), have separation layer in entire substrate, have the air chamber from substrate top surface to lower recess between substrate and separation layer；Lower electrode, piezoelectric layer and top electrode are respectively provided on separation layer；There is the passivation layer for the expose portion at least covering entire top electrode and/or lower electrode on top electrode.Compared with existing FBAR, the application increases separation layer identical with substrate dimension in substrate.This aspect can reduce the requirement in terms of resistivity to substrate material, to reduce the cost of substrate；On the other hand isolation of the substrate between device can be promoted, under the premise of not changing substrate material to promote the open-circuit impedance of resonator.The application also increases passivation layer on the expose portion of top electrode and/or lower electrode, can effectively prevent the influence that top electrode and/or lower electrode bring device performance and long-term reliability by oxidation iso-metamorphism.
Description
Technical field
This application involves a kind of thin film bulk acoustic wave resonator (FBAR or TFBAR, thin-film bulk acoustic
resonator)。
Background technology
FBAR is a kind of semiconductor devices, and main includes the piezoelectric material being clipped among two electrodes, and three constitutes Sanming City
Control structure.FBAR is usually used in making the radio-frequency filter in the wireless devices such as mobile phone, and the filter is made of one group of FBAR, example
It such as uses half trapezoidal (half-ladder), complete trapezoidal (full-ladder), lattice (lattice), stack (stack) topology
Structure, for filtering out unwanted frequency while specific frequency being allowed to pass through.FBAR is additionally operable to make duplexer, replaces early stage with part
Surface acoustic wave (SAW, surface acoustic wave) device, it is advantageous that size is small, technique is advanced, improved efficiency.
In addition, FBAR is additionally operable to make microwave oscillator, sensor, power amplifier, low-noise amplifier etc..
Referring to Fig. 1, this is a kind of diagrammatic cross-section of existing FBAR.Be respectively provided on substrate 1 lower electrode 3,
Piezoelectric layer 4 and top electrode 5.The substrate 1 is, for example, the linings such as silicon, sapphire, GaAs, gallium nitride, silicon carbide, quartz, glass
Bottom material.The lower electrode 3, top electrode 5 are, for example, aluminium, gold, aluminium copper, alusil alloy, Al-Si-Cu alloy, tungsten, titanium, titanium tungsten
The metal materials such as compound, molybdenum, platinum.The piezoelectric layer 4 is, for example, zinc oxide, PZT (Lead zirconate titanate, zirconium
Lead titanates), the piezoelectric materials such as aluminium nitride.There is the air being recessed downwards from the upper table of substrate 1 between substrate 1 and lower electrode 3
Chamber 2.
A is please referred to Fig.1, this is the schematic domain of the part-structure of FBAR shown in FIG. 1.Air chamber 2 (oblique line filling) exists
Edge has at least one sacrificial layer release channel 2a.Lower electrode 3 (solid line is not filled by) is completely covered on air chamber 2,
In addition to sacrificial layer release channel 2a.Top electrode 5 (dotted line is not filled by) is partially covered on air chamber 2.Lower electrode 3 with it is upper
The overlapping region of electrode 5 is most of on air chamber 2, also has fraction to fall except air chamber 2.
B is please referred to Fig.1, the manufacturing method of FBAR shown in FIG. 1 includes the following steps：
Step S101 goes out a pit, for example, by using lithography and etching technique in the surface etch of substrate 1.The shape of pit
Shape is exactly the summation of the sacrificial layer release channel 2a at air chamber 2 and its edge.
Step S102 deposits one layer of sacrificial layer on substrate 1, at least fills the pit full.The sacrificial layer is for example
For silica, aluminium, magnesium, germanium etc..
Sacrificial layer is ground to the upper table with substrate 1 using flatening process such as chemical mechanical grindings (CMP) by step S103
Face flushes.
Step S104 first grows one layer of metal, then by this layer of metal etch at lower electrode on substrate 1 and sacrificial layer
3, for example, by using sputtering, lithography and etching technique.Lower electrode 3 substantially covers the position of air chamber 2, but exposes sacrificial layer release
The position of channel 2a.
Step S105 first deposits a layer of piezo-electric material on substrate 1, sacrificial layer and lower electrode 3, then by lamination electricity
Material etch is at piezoelectric layer 4.Piezoelectric layer 4 completely covers pit, but exposes the exit of lower electrode 3.
Step S106 first grows one layer of metal on substrate 1, sacrificial layer, lower electrode 3 and piezoelectric layer 4, then by the layer
Metal etch is at top electrode 5, for example, by using deposit, lithography and etching technique.
Then step S107, etching piezoelectric layer 4 pass through the sacrificial layer to expose the position of sacrificial layer release channel 2a
The whole sacrificial layer of release channel 2a removals, for example, by using photoetching, etching, wet corrosion technique.Originally it is sacrificed what layer occupied
Part is just located at as air chamber 2 between substrate 1 and lower electrode 3.
Above-mentioned FBAR has as a drawback that：
First, lower electrode 3 is directly contacted with substrate 1, thus it is more demanding to the resistivity of substrate 1.The lining of certain materials
Contact stress between bottom 1 and lower electrode 3 is larger so that the growth structure of lower electrode 3 is poor, leads to the poor performance of FBAR.
Second, lower electrode 3 is placed directly on air chamber 2, therefore lower electrode 3 must cover all the side of air chamber 2
Edge (removes sacrificial layer release channel 2a).Therefore the overlapping region of lower electrode 3 and top electrode 5 have sub-fraction not air chamber 2 it
On, this can cause the leakage of sound wave, influence the quality factor of FBAR.
Third, top electrode 5 is exposed in air, it is easy oxidation, rotten etc., to cause shadow to parameters such as the frequencies of FBAR
It rings.
The shortcomings that for existing FBAR, existing document disclose the improvement project of some FBAR.
Publication No. CN101217266A, the Chinese invention patent application that publication date is on July 9th, 2008 disclose one kind
Bulk acoustic wave resonator mainly improves air gap structure.Traditional air gap structure is located in substrate, manufacture
Technique is first to etch pit on substrate, fill sacrificial layer in pit, chemically-mechanicapolish polished to sacrificial layer, is finally removed
Sacrificial layer.The air gap structure of this part of patent application is located at substrate, and manufacturing process is first to prepare sacrifice on substrate
Layer simultaneously etches required shape, and the film support layer to raise up is then prepared on substrate and sacrificial layer, and finally removal is sacrificed
Layer.The air gap structure of this part of patent application is between substrate and film support layer, it is convenient to omit etched substrate, chemical machine
The processing steps such as tool polishing, etching through hole.
The Chinese invention patent application that application publication number is CN102931941A, data of publication of application is on 2 13rd, 2013
A kind of bulk acoustic wave resonator is disclosed, mainly the material of each layer film is improved.Traditional supporting layer is usually selected
Silicon nitride, top electrode and the usual aluminium of lower electrode, platinum, ruthenium.This part of patent application then uses supporting layer instead diamond-film-like
(DLC), top electrode and lower electrode are used instead tungsten.This makes supporting layer make compatible low temperature CMOS technology, and with some other
Advantageous effect.
The Chinese invention patent application that application publication number is CN104767500A, data of publication of application is on July 8th, 2015 is public
A kind of bulk acoustic wave resonator has been opened, mainly the manufacturing process of cavity has been improved.Traditional cavity manufacturing process is first to exist
Pit is etched on substrate, sacrificial layer is filled in pit, sacrificial layer is chemically-mechanicapolish polished, and finally removes sacrificial layer.It should
Part patent application uses two wafers --- and substrate and support substrate are prepared, is preparing Grown membrane structure layer, and give
Two embodiments are gone out.Embodiment one is etched recesses on the support substrate, then will prepare substrate and be covered with membrane structure layer
To form cavity on the groove of support substrate.Embodiment will prepare substrate with film second is that do not performed etching to support substrate
Structure sheaf is welded with support substrate, and cavity is formed by the welding material of protrusion.Chemically mechanical polishing, sacrificial can be saved in this way
Domestic animal layer first prepares the processing step removed again.
Invention content
By any of the above existing thin film bulk acoustic wave resonator it is found that main improve focuses on simplified manufacturing process, and for
Device performance and reliability less focus on.Technical problems to be solved in this application are to provide a kind of thin-film body sound of high reliability
Wave resonator, while reducing manufacturing cost.
In order to solve the above technical problems, one of the thin film bulk acoustic wave resonator of the application high reliability be entire substrate it
It is upper that there is separation layer, there is the air chamber from substrate top surface to lower recess between substrate and separation layer；On separation layer respectively
With lower electrode, piezoelectric layer and top electrode；The overlapping region of lower electrode and top electrode is all on air chamber；On top electrode
Passivation layer with the expose portion at least covering entire top electrode and/or lower electrode.
One of the manufacturing method of thin film bulk acoustic wave resonator of the application high reliability includes the following steps：
Step S201 goes out a pit in the surface etch of substrate；
Step S202 deposits one layer of sacrificial layer on substrate, at least fills the pit full；
Step S203, sacrificial layer is ground to and is flushed with substrate top surface；
Step S204, deposits one layer of separation layer, and the size of separation layer is identical as substrate；
Step S205 grows one layer of metal, then by this layer of metal etch at lower electrode；
Step S206 deposits a layer of piezo-electric material, then the layer of piezo-electric material is etched into piezoelectric layer；
Step S207 grows one layer of metal, then by this layer of metal etch at top electrode；The overlay region of lower electrode and top electrode
Domain is all on air chamber；
Step S208 deposits one layer of passivation layer；
Step S209 etches piezoelectric layer or Etch Passivation and piezoelectric layer to expose sacrificial layer release channel, passes through
The whole sacrificial layer of sacrificial layer release channel removal, being sacrificed the part that layer occupies originally just becomes air chamber.
Compared with existing thin film bulk acoustic wave resonator, the application substrate increase it is identical with substrate dimension every
Absciss layer.This aspect can reduce the requirement in terms of resistivity to substrate material, to reduce the cost of substrate；On the other hand
Isolation of the substrate between device can be promoted under the premise of not changing substrate material, to promote the open circuit resistance of resonator
It is anti-.The application also increases passivation layer on the expose portion of top electrode and/or lower electrode, can effectively prevent top electrode
And/or the influence that lower electrode brings device performance and long-term reliability by oxidation iso-metamorphism.The application also optimizes lower electrode
Figure so that the overlapping region of lower electrode and top electrode is fully fallen on air chamber, this will greatly reduce the leakage of sound wave,
Improve the quality factor of FBAR.
Description of the drawings
Fig. 1 is a kind of diagrammatic cross-section of existing FBAR.
Fig. 1 a are the domain schematic diagrames (only part-structure) of FBAR shown in FIG. 1.
Fig. 1 b are the flow charts of the manufacturing method of FBAR shown in FIG. 1.
Fig. 2 is the diagrammatic cross-section of the embodiment one of the FBAR of the application.
Fig. 2 a are the flow charts of the manufacturing method of FBAR shown in Fig. 2.
Fig. 2 b are a kind of distressed structures of FBAR shown in Fig. 2.
Fig. 3 is the diagrammatic cross-section of the embodiment two of the FBAR of the application.
Fig. 3 a are the domain schematic diagrames (only part-structure) of FBAR shown in Fig. 3.
Fig. 3 b are a kind of distressed structures of FBAR shown in Fig. 3.
Fig. 4 is the diagrammatic cross-section of the embodiment three of the FBAR of the application.
Fig. 4 a are the flow charts of the manufacturing method of FBAR shown in Fig. 4.
Fig. 4 b are a kind of distressed structures of FBAR shown in Fig. 4.
Reference sign in figure：1 is substrate；2 be air chamber；2a is sacrificial layer release channel；3 be lower electrode；4 be pressure
Electric layer；5 be top electrode；7 be separation layer；8 be passivation layer；9 be etched channels.
Specific implementation mode
Referring to Fig. 2, this is the diagrammatic cross-section of the embodiment one of the FBAR of the application.There is isolation on substrate 1
Layer 7, the size of separation layer 7 is identical as substrate 1, i.e., separation layer 7 is on entire substrate 1.Substrate 1 is, for example, silicon, sapphire, arsenic
Change the substrate materials such as gallium, gallium nitride, silicon carbide, quartz, glass.Separation layer 7 is, for example, silica, silicon nitride, silicon oxynitride, nitrogen
Change the materials such as aluminium.There is the air chamber 2 being recessed downwards from the upper table of substrate 1 between substrate 1 and separation layer 7.Separation layer 7 it
On be respectively provided with lower electrode 3, piezoelectric layer 4 and top electrode 5.Lower electrode 3 and top electrode 5 are, for example, aluminium, gold, aluminium copper, aluminium silicon
The metal materials such as alloy, Al-Si-Cu alloy, tungsten, titanium, titanium tungsten compound, molybdenum, platinum.Piezoelectric layer 4 is, for example, zinc oxide, PZT, nitridation
The piezoelectric materials such as aluminium.There is passivation layer 8 on top electrode 5, at least cover entire top electrode 5 and/or the exposed portion of lower electrode 3
Point.Passivation layer 8 is, for example, the materials such as silica, silicon nitride, silicon oxynitride, aluminium nitride.
The schematic domain of part-structure of FBAR shown in Fig. 2 is also as shown in Figure 1a.Lower electrode 3 (solid line is not filled by) is complete
Site preparation is covered on air chamber 2, in addition to sacrificial layer release channel 2a.Top electrode 5 (dotted line is not filled by) is partially covered over sky
On air cavity 2.Lower electrode 3 and the overlapping region of top electrode 5 are most of on air chamber 2, also have fraction to fall in air chamber 2
Except.
Fig. 2 a are please referred to, the manufacturing method of FBAR shown in Fig. 2 includes the following steps：
Step S201 goes out a pit, for example, by using lithography and etching technique in the surface etch of substrate 1.The shape of pit
Shape is exactly the summation of the sacrificial layer release channel 2a at air chamber 2 and its edge.
Step S202 deposits one layer of sacrificial layer on substrate 1, at least fills the pit full.The sacrificial layer is for example
For silica, aluminium, magnesium, germanium, boro-phosphorus glass, phosphorosilicate glass, silester, polysilicon, photoresist etc..
Sacrificial layer is ground to the upper table with substrate 1 using chemical mechanical grinding or other flatening process by step S203
Face flushes.
Step S204 deposits one layer of separation layer 7 on substrate 1 and sacrificial layer.
Step S205 first grows one layer of metal on separation layer 7, then by this layer of metal etch at lower electrode 3, such as
Using sputtering, lithography and etching technique.Lower electrode 3 substantially covers the position of air chamber 2, but exposes sacrificial layer release channel 2a
Position.
Step S206 first deposits a layer of piezo-electric material, then by the layer of piezo-electric material on separation layer 7 and lower electrode 3
It is etched into piezoelectric layer 4.Piezoelectric layer 4 completely covers pit, but exposes the exit of lower electrode 3.
Step S207 first grows one layer of metal on separation layer 7, lower electrode 3 and piezoelectric layer 4, then by this layer of metal
It is etched into top electrode 5, for example, by using deposit, lithography and etching technique.5 part of top electrode covers the position of air chamber 2, and exposure
Go out the position of sacrificial layer release channel 2a.
Step S208 first deposits one layer of passivation layer 8, at this time on separation layer 7, lower electrode 3, piezoelectric layer 4, top electrode 5
The size of passivation layer 8 is identical as substrate 1.Optionally, this layer of passivation layer 8 is etched at least completely cover top electrode 5 and/or
The expose portion of lower electrode 3, for example, by using deposit, lithography and etching technique.
Step S209, etching piezoelectric layer 4 (or Etch Passivation 8 and piezoelectric layer 4) are logical to expose sacrificial layer release
The position of road 2a, then by the whole sacrificial layer of sacrificial layer release channel 2a removals, for example, by using photoetching, etching technics.
Originally the part that layer occupies is sacrificed just to be located between substrate 1 and lower electrode 3 as air chamber 2.
Compared with existing FBAR, above-described embodiment one has the following advantages that：
First, increasing separation layer 7 between lower electrode 3 and substrate 1.First, separation layer 7 can increase device architecture
Stability realizes the function of existing supporting layer.Secondly, separation layer 7 increases being isolated between device and substrate 1, can drop
The low resistivity requirement to substrate 1, and prevent having electric leakage between the electrode of device, to provide better base for IC is integrated
Plinth.Again, separation layer 7 can improve the consistency of device architecture growth, to carry as the transition between device and substrate 1
High device performance and reliability.
Second, passivation layer 8 completely covers the expose portion of top electrode 5 and/or lower electrode 3, avoid top electrode 5 and/
Or lower electrode 3 expose portion it is exposed in air caused by oxidation, it is rotten phenomena such as, keep the performance of FBAR steady in a long-term
Reliably.
Fig. 2 b are please referred to, this is a kind of deformation of Fig. 2.In Fig. 2, the sacrificial layer release channel 2a at 2 edge of air chamber adds
Injecting medical liquid carries out wet corrosion technique to sacrificial layer.In Fig. 2 b, at least one quarter is increased newly in the central area of the air chamber 2 of FBAR
Channel 9 is lost, through-hole of the bottom in sacrificial layer is etched for example, by using lithography and etching technique, then passes through the etched channels
9 (can also pass through the sacrificial layer release channel 2a at 2 edge of air chamber simultaneously) filling liquids carry out wet corrosion technique to sacrificial layer.
The advantage of this distressed structure is that sacrificial layer rate of release can be improved, to other device junctions when to reduce sacrificial layer release
It is constructed of damage.At the same time, this distressed structure may reduce the performance of FBAR, therefore suitable for relatively low to performance requirement
But in the case of very high to reliability requirement.
Referring to Fig. 3, this is the diagrammatic cross-section of the embodiment two of the FBAR of the application.There is isolation on substrate 1
Layer 7, the size of separation layer 7 is identical as substrate 1, i.e., separation layer 7 is on entire substrate 1.Substrate 1 is, for example, silicon, sapphire, arsenic
Change the substrate materials such as gallium, gallium nitride, silicon carbide, quartz, glass.Separation layer 7 is, for example, silica, silicon nitride, silicon oxynitride, nitrogen
Change the materials such as aluminium.There is the air chamber 2 being recessed downwards from the upper table of substrate 1 between substrate 1 and separation layer 7.Separation layer 7 it
On be respectively provided with lower electrode 3, piezoelectric layer 4 and top electrode 5.Lower electrode 3 and top electrode 5 are, for example, aluminium, gold, aluminium copper, aluminium silicon
The metal materials such as alloy, Al-Si-Cu alloy, tungsten, titanium, titanium tungsten compound, molybdenum, platinum.Piezoelectric layer 4 is, for example, zinc oxide, PZT, nitridation
The piezoelectric materials such as aluminium.There is passivation layer 8 on top electrode 5, at least cover entire top electrode 5.Passivation layer 8 is, for example, to aoxidize
The materials such as silicon, silicon nitride, silicon oxynitride, aluminium nitride.
Fig. 3 a are please referred to, this is the schematic domain of the part-structure of FBAR shown in Fig. 3.Domain is divided into the plane
Orthogonal X-axis and Y-axis, lower electrode 3 for example extend exit in X-direction, and top electrode 5 is for example drawn in Y direction extension
Outlet.Air chamber 2 (oblique line filling) has at least one sacrificial layer release channel 2a at edge.Lower electrode 3 (solid line is not filled by)
The edge of air chamber 2 is completely covered in all directions in addition to 5 lead direction of top electrode, but in 5 side of extraction of top electrode
To the edge for not covering air chamber 2 within the edge of air chamber 2.Certainly, lower electrode 3 does not cover sacrificial layer release channel yet
2a.Top electrode 5 (dotted line is not filled by) is partially covered on air chamber 2.Lower electrode 3 and the overlapping region of top electrode 5 are whole
On air chamber 2.
The manufacturing method of FBAR shown in Fig. 3 is also as shown in Figure 2 a.
Compared with embodiment one, above-described embodiment two optimizes the figure of lower electrode 3 so that lower electrode 3 and top electrode 5
Overlapping region is fully fallen on air chamber 2, this will greatly reduce the leakage of sound wave, improves the quality factor of FBAR.With implementation
Example one has deformation identical, and embodiment two is also with same deformation and with same advantage and disadvantage, as shown in Figure 3b.
Referring to Fig. 4, this is the diagrammatic cross-section of the embodiment three of the FBAR of the application.There is isolation on substrate 1
Layer 7, the size of separation layer 7 is identical as substrate 1, i.e., separation layer 7 is on entire substrate 1.Substrate 1 is, for example, silicon, sapphire, arsenic
Change the substrate materials such as gallium, gallium nitride, silicon carbide, quartz, glass.Separation layer 7 is, for example, silica, silicon nitride, silicon oxynitride, nitrogen
Change the materials such as aluminium.Lower electrode 3, piezoelectric layer 4 and top electrode 5 are respectively provided on separation layer 7.Lower electrode 3 and top electrode 5 are for example
For metal materials such as aluminium, gold, aluminium copper, alusil alloy, Al-Si-Cu alloy, tungsten, titanium, titanium tungsten compound, molybdenum, platinum.Piezoelectric layer 4
The for example, piezoelectric materials such as zinc oxide, PZT, aluminium nitride.Between substrate 1 and lower electrode 3 downwards with the upper table from separation layer 7
Recess and the air chamber 2 for penetrating separation layer 7.There is passivation layer 8 on top electrode 5, at least cover entire top electrode 5.Passivation
Layer 8 is, for example, the materials such as silica, silicon nitride, silicon oxynitride, aluminium nitride.
The schematic domain of part-structure of FBAR shown in Fig. 4 is also as shown in Figure 1a.Lower electrode 3 (solid line is not filled by) is complete
Site preparation is covered on air chamber 2, in addition to sacrificial layer release channel 2a.Top electrode 5 (dotted line is not filled by) is partially covered over sky
On air cavity 2.Lower electrode 3 and the overlapping region of top electrode 5 are most of on air chamber 2, also have fraction not in air chamber 2
On.
Fig. 4 a are please referred to, the manufacturing method of FBAR shown in Fig. 4 includes the following steps：
Step S401 deposits one layer of separation layer 7 on substrate 1.
Step S402 goes out a pit in the surface etch of separation layer 7, and pit penetrates separation layer 7 and falls in substrate 1, example
Such as use lithography and etching technique.The shape of pit is exactly the summation of the sacrificial layer release channel 2a at air chamber 2 and its edge.
Step S403 deposits one layer of sacrificial layer on separation layer 7, at least fills the pit full.The sacrificial layer example
Such as it is silica, aluminium, magnesium, germanium, boro-phosphorus glass, phosphorosilicate glass, silester, polysilicon, photoresist.
Sacrificial layer is ground to upper with separation layer 7 by step S404 using chemical mechanical grinding or other flatening process
Surface flushes.
Step S405 is identical to step S209 as step S205 respectively to step 409.
Compared with embodiment one, above-described embodiment three optimizes the three-dimensional position of air chamber 2.In embodiment one, air
Chamber 2 is between substrate 1 and separation layer 7.And embodiment three eliminates the separation layer 7 of 2 top of air chamber so that air chamber 2
Between substrate and lower electrode 3, while remaining other advantages of separation layer 7.Lower electrode 3 is directly exposed to 2 interface of air chamber
Sound wave leakage can be reduced, the quality factor of FBAR are improved.Have deformation identical with embodiment one, embodiment three also has same
Deformation and have same advantage and disadvantage, as shown in Figure 4 b.
The preferred embodiment that these are only the application is not used to limit the application.Those skilled in the art is come
It says, the application can have various modifications and variations.Within the spirit and principles of this application, any modification made by is equal
Replace, improve etc., it should be included within the protection domain of the application.
Claims (6)
1. a kind of thin film bulk acoustic wave resonator of high reliability, characterized in that entire substrate have separation layer, substrate and
There is the air chamber from substrate top surface to lower recess between separation layer；Be respectively provided on separation layer lower electrode, piezoelectric layer and
Top electrode；The overlapping region of lower electrode and top electrode is all on air chamber；Have on top electrode at least covering entirely
The passivation layer of the expose portion of electrode and/or lower electrode.
2. the thin film bulk acoustic wave resonator of high reliability according to claim 1, characterized in that lower electrode is except top electrode
All directions other than lead direction completely cover the edge of air chamber, but do not cover air chamber in top electrode lead direction
Edge and within the edge of air chamber；Top electrode is partially covered on air chamber.
3. the thin film bulk acoustic wave resonator of high reliability according to claim 1, characterized in that the separation layer, passivation
Layer is one or more in silica, silicon nitride, silicon oxynitride, aluminium nitride.
4. the thin film bulk acoustic wave resonator of high reliability according to claim 1, characterized in that in the center of air chamber
Domain increases at least one etched channels newly, and the etched channels penetrate passivation layer, top electrode, piezoelectric layer, lower electrode and separation layer.
5. a kind of manufacturing method of the thin film bulk acoustic wave resonator of high reliability, characterized in that include the following steps：
Step S201 goes out a pit in the surface etch of substrate；
Step S202 deposits one layer of sacrificial layer on substrate, at least fills the pit full；
Step S203, sacrificial layer is ground to and is flushed with substrate top surface；
Step S204, deposits one layer of separation layer, and the size of separation layer is identical as substrate；
Step S205 grows one layer of metal, then by this layer of metal etch at lower electrode；
Step S206 deposits a layer of piezo-electric material, then the layer of piezo-electric material is etched into piezoelectric layer；
Step S207 grows one layer of metal, then by this layer of metal etch at top electrode；The overlapping region of lower electrode and top electrode is complete
Portion is on air chamber；
Step S208 deposits one layer of passivation layer；
Step S209, etching piezoelectric layer or Etch Passivation and piezoelectric layer are sacrificial by this to expose sacrificial layer release channel
The whole sacrificial layer of domestic animal layer release channel removal, being sacrificed the part that layer occupies originally just becomes air chamber.
6. the manufacturing method of the thin film bulk acoustic wave resonator of high reliability according to claim 5, characterized in that the step
Further include etching through-hole of the bottom in sacrificial layer in sacrificial layer center in rapid S209, then by the through-hole and/or
The whole sacrificial layer of sacrificial layer release channel removal.
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