CN113328719B - Solid assembly type bulk acoustic wave resonator with temperature compensation function - Google Patents
Solid assembly type bulk acoustic wave resonator with temperature compensation function Download PDFInfo
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- CN113328719B CN113328719B CN202110681925.7A CN202110681925A CN113328719B CN 113328719 B CN113328719 B CN 113328719B CN 202110681925 A CN202110681925 A CN 202110681925A CN 113328719 B CN113328719 B CN 113328719B
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- acoustic wave
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- 239000007787 solid Substances 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000010355 oscillation Effects 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910001080 W alloy Inorganic materials 0.000 claims description 5
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920006149 polyester-amide block copolymer Polymers 0.000 claims description 3
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 83
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a solid assembly type bulk acoustic wave resonator with a temperature compensation function, which is characterized in that a Bragg reflection layer is arranged on a substrate and is formed by alternately forming a low acoustic impedance layer and a high acoustic impedance layer; the first temperature compensation layer is positioned on the Bragg reflection layer; a piezoelectric oscillation stack formed by a lower electrode, a piezoelectric layer and an upper electrode which are sequentially arranged from bottom to top is positioned on the first temperature compensation layer; the second temperature compensation layer is positioned on the upper electrode; the first temperature compensation layer and the second temperature compensation layer are made of positive temperature coefficient materials. According to the invention, the double-layer temperature compensation structure is added into the resonator, so that the frequency temperature coefficient of the device is obviously reduced, and the device can adapt to the current high-power and high-frequency working environment; meanwhile, the first temperature compensation layer positioned on the Bragg top layer can reflect longitudinal waves, has a higher reflection coefficient for shear waves, and avoids the leakage of shear wave energy of the device into the substrate at the resonance position, so that the Q value of the device is improved.
Description
Technical Field
The invention relates to the technical field of radio frequency filters, in particular to a solid assembly type bulk acoustic wave resonator with a temperature compensation function.
Background
In recent years, with the continuous development of modern wireless communication technology, the requirements of a radio frequency filter and a duplexer are higher, and devices need to work in a higher frequency range and have lower insertion loss. Bulk acoustic wave resonators (BAWs) have become one of the most widely used devices for current rf filters because of their wide operating band, high quality factor, small size, etc.
Bulk acoustic wave resonators currently in use in the market are mainly divided into two structures: cavity-type Film Bulk Acoustic Resonators (FBARs) and Solid Mount Resonators (SMRs). Compared with the traditional cavity structure, the solid assembly resonator can remarkably improve the mechanical strength of the device, and is mainly formed by stacking an active sandwich structure formed by a top electrode, a piezoelectric layer and a bottom electrode on a Bragg reflection layer; wherein the Bragg reflection layer is composed of multiple layers of films with alternating acoustic impedance, and the thickness of each layer is controlled to be one quarter of the wavelength. The reflection mechanism of the bragg layer is: the acoustic wave excited by the electric signal at the piezoelectric layer will be totally reflected at each layer interface of the Bragg structure, and most of the energy will be reflected back to the piezoelectric layer. Since the Bragg structure has a high reflection coefficient for the longitudinal wave at the resonant frequency and a relatively low reflection coefficient for the shear wave, a portion of the shear wave energy leaks into the substrate, resulting in a lower device Q. In addition, since the electrode, piezoelectric layer and high acoustic impedance reflection layer used in the SMR device are all materials with negative temperature coefficient, when the operating temperature of the device increases, the device generates a significant temperature drift phenomenon.
Disclosure of Invention
The invention aims to solve the defects of the prior solid assembly type bulk acoustic wave resonator technology, and provides a solid assembly type bulk acoustic wave resonator with a temperature compensation function, so that a device has better temperature and frequency stability, namely a smaller frequency Temperature Coefficient (TCF); in addition, the structure can restrain transverse parasitic vibration and improve the Q value of the device.
The technical scheme adopted by the invention is as follows:
the invention comprises a substrate, a Bragg reflection layer, a first temperature compensation layer, a lower electrode, a piezoelectric layer, an upper electrode and a second temperature compensation layer; the Bragg reflection layer is positioned on the substrate and is formed by alternately forming a low acoustic impedance layer and a high acoustic impedance layer; the first temperature compensation layer is positioned on the Bragg reflection layer; a piezoelectric oscillation stack formed by a lower electrode, a piezoelectric layer and an upper electrode which are sequentially arranged from bottom to top is positioned on the first temperature compensation layer; the second temperature compensation layer is positioned on the upper electrode; the first temperature compensation layer and the second temperature compensation layer are made of positive temperature coefficient materials.
Preferably, the material of the substrate is monocrystalline silicon, polycrystalline silicon, sapphire, lithium niobate, diamond or sapphire.
Preferably, the material of the high acoustic impedance layer in the Bragg reflection layer is molybdenum, tungsten, titanium-tungsten alloy, aluminum nitride or lithium niobate; the material of the low acoustic impedance layer is aluminum, silicon dioxide, porous silicon or polyester amide.
Preferably, the total number of layers of the Bragg reflection layer is 5-7, and the thickness of each layer is one quarter or three quarters of the wavelength of an acoustic wave signal excited by the resonator at the parallel resonance in the layer material; the ratio of acoustic impedance between adjacent high acoustic impedance layers and low acoustic impedance layers in the Bragg reflection layer is 1.5-4; and the ratio of acoustic impedance of each low acoustic impedance layer of the Bragg reflection layer to the acoustic impedance of the second temperature compensation layer is not more than 1.
More preferably, the top layer of the bragg reflection layer is a low acoustic impedance layer, and the total number of bragg reflection layers is a base number, that is, the first layer and the last layer are both low acoustic impedance layers.
Preferably, the materials of the upper electrode and the lower electrode are aluminum, molybdenum, gold, tungsten, titanium, silver, platinum or titanium-tungsten alloy.
Preferably, the material of the piezoelectric layer is aluminum nitride, lithium niobate, lead zirconate titanate, barium strontium titanate, zinc oxide or PZT.
Preferably, the materials of the first temperature compensation layer and the second temperature compensation layer are silicon dioxide or silicon nitride.
Preferably, the thickness of the first temperature compensation layer is one fourth of the thickness of the low acoustic impedance layer in the bragg reflection layer.
Preferably, the thickness of the second temperature compensation is 50 nm-300 nm.
The invention has the beneficial effects that:
according to the invention, the double-layer temperature compensation structure is added into the resonator, so that the frequency temperature coefficient of the device can be obviously reduced, namely, the resonant frequency of the device cannot be obviously changed along with the temperature change of the device, and the device can adapt to the current high-power and high-frequency working environment; at the same time, the first temperature compensation layer positioned on the Bragg top layer can reflect longitudinal waves and has a higher reflection coefficient for shear waves, and the structure prevents the shear wave energy of the device from leaking into the substrate at the resonance position, so that the Q value of the device is improved.
Drawings
FIG. 1 is a schematic diagram of a solid-state bulk acoustic wave resonator according to the present invention;
FIG. 2 is a schematic diagram of a Bragg reflector according to the present invention;
FIG. 3a is a schematic diagram of transmission loss magnitudes of longitudinal and transverse waves in a conventional Bragg reflection layer structure;
FIG. 3b is a schematic diagram of transmission loss amplitude of longitudinal and transverse waves in the Bragg reflection layer and first temperature compensation layer combination structure of the present invention;
fig. 4 is a graph showing the impedance magnitude comparison of a solid-state mounted bulk acoustic wave resonator according to the present invention and a conventional solid-state mounted bulk acoustic wave resonator.
Detailed Description
For a better description of the invention, the latter will be further described with reference to the accompanying drawings.
As shown in fig. 1 and 2, the solid-state assembled bulk acoustic wave resonator with temperature compensation function includes a substrate 101, a bragg reflection layer 102, a first temperature compensation layer 103, a lower electrode 104, a piezoelectric layer 105, an upper electrode 106, and a second temperature compensation layer 107; the bragg reflection layer 102 is disposed on the substrate 101, the bragg reflection layer 102 being formed of low acoustic impedance layers 108 and high acoustic impedance layers 109 alternately with each other; the first temperature compensation layer 103 is arranged on the Bragg reflection layer, and a piezoelectric oscillation stack formed by a lower electrode 104, a piezoelectric layer 105 and an upper electrode 106 which are sequentially arranged from bottom to top is arranged on the first temperature compensation layer; the second temperature compensation layer 107 is disposed on the upper electrode 106 and can be used as a protective layer for the upper electrode to prevent the upper electrode from being oxidized in air due to leakage; the first temperature compensation layer and the second temperature compensation layer are made of positive temperature coefficient materials.
Wherein the substrate 101 is made of materials including, but not limited to, monocrystalline silicon, polycrystalline silicon, sapphire, lithium niobate, diamond, and sapphire; materials selected for the low acoustic impedance layer 108 in the Bragg reflection layer 102 include, but are not limited to, aluminum, silicon dioxide, porous silicon, polyester amide; materials for the high acoustic impedance layer 109 in the Bragg reflection layer 102 include, but are not limited to, molybdenum, tungsten, titanium tungsten alloy, aluminum nitride, and lithium niobate. The materials selected for the upper electrode 106 and the lower electrode 104 include, but are not limited to, aluminum, molybdenum, gold, tungsten, titanium, silver, and platinum. The piezoelectric layer 105 is made of materials including, but not limited to, aluminum nitride, lithium niobate, lead zirconate titanate, barium strontium titanate, and zinc oxide. The materials selected for the first temperature compensation layer 103 and the second temperature compensation layer 107 include, but are not limited to, silicon dioxide.
As shown in fig. 3a and fig. 3b, compared with the transmission loss of the conventional bragg structure at the resonance frequency, the combination structure of the bragg reflection layer and the first temperature compensation layer 103 of the present invention has a larger attenuation effect on both the longitudinal wave and the transverse wave, and compared with the conventional bragg structure having an attenuation effect on only the longitudinal wave, the present invention can reduce the leakage of the shear wave energy of the device and increase the Q value of the device.
As shown in fig. 4, the impedance of the solid-state mounted bulk acoustic wave resonator of the present invention is 2703 ohms at the parallel resonance frequency of the device, whereas the impedance of the conventional solid-state mounted bulk acoustic wave resonator is only 1238 ohms at the same frequency point, so that the phase of the solid-state mounted bulk acoustic wave resonator of the present invention is steeper than that of the conventional solid-state mounted bulk acoustic wave resonator, and the Q value at the parallel resonance point is much higher than that of the conventional solid-state mounted bulk acoustic wave resonator.
In addition, compared with the traditional Bragg structure, the combined structure of the Bragg reflection layer, the first temperature compensation layer and the second temperature compensation layer has a double temperature compensation function, the traditional resonator can only work at room temperature, and the bulk acoustic wave resonator can be applied to a long-time high-power and high-frequency working environment because the bulk acoustic wave resonator has a frequency temperature coefficient close to zero.
Claims (9)
1. The solid assembly type bulk acoustic wave resonator with the temperature compensation function comprises a substrate, a Bragg reflection layer, a lower electrode, a piezoelectric layer and an upper electrode, and is characterized in that: the device further comprises a first temperature compensation layer and a second temperature compensation layer; the Bragg reflection layer is positioned on the substrate and is formed by alternately forming a low acoustic impedance layer and a high acoustic impedance layer; the first temperature compensation layer is positioned on the Bragg reflection layer; a piezoelectric oscillation stack formed by a lower electrode, a piezoelectric layer and an upper electrode which are sequentially arranged from bottom to top is positioned on the first temperature compensation layer; the second temperature compensation layer is positioned on the upper electrode; the first temperature compensation layer and the second temperature compensation layer are made of positive temperature coefficient materials; the thickness of the first temperature compensation layer is one fourth of the thickness of the low acoustic impedance layer in the Bragg reflection layer.
2. The solid state mounted bulk acoustic wave resonator with temperature compensation function according to claim 1, wherein: the substrate is made of monocrystalline silicon, polycrystalline silicon, sapphire, lithium niobate, diamond or sapphire.
3. The solid state mounted bulk acoustic wave resonator with temperature compensation function according to claim 1, wherein: the material of the high acoustic impedance layer in the Bragg reflection layer is molybdenum, tungsten, titanium tungsten alloy, aluminum nitride or lithium niobate; the material of the low acoustic impedance layer is aluminum, silicon dioxide, porous silicon or polyester amide.
4. The solid state mounted bulk acoustic wave resonator with temperature compensation function according to claim 1, wherein: the total number of layers of the Bragg reflection layer is 5-7, and the thickness of each layer is one quarter or three quarters of the wavelength of an acoustic wave signal excited by the resonator at the parallel resonance position in the layer material; the ratio of acoustic impedance between adjacent high acoustic impedance layers and low acoustic impedance layers in the Bragg reflection layer is 1.5-4; and the ratio of acoustic impedance of each low acoustic impedance layer of the Bragg reflection layer to the acoustic impedance of the second temperature compensation layer is not more than 1.
5. The solid state mounted bulk acoustic wave resonator with temperature compensation function according to claim 4, wherein: the topmost layer of the Bragg reflection layer is a low acoustic impedance layer, and the total number of layers of the Bragg reflection layer is a base number.
6. The solid state mounted bulk acoustic wave resonator with temperature compensation function according to claim 1, wherein: the upper electrode and the lower electrode are made of aluminum, molybdenum, gold, tungsten, titanium, silver, platinum or titanium-tungsten alloy.
7. The solid state mounted bulk acoustic wave resonator with temperature compensation function according to claim 1, wherein: the piezoelectric layer is made of aluminum nitride, lithium niobate, lead zirconate titanate, barium strontium titanate, zinc oxide or PZT.
8. The solid state mounted bulk acoustic wave resonator with temperature compensation function according to claim 1, wherein: the first temperature compensation layer and the second temperature compensation layer are made of silicon dioxide or silicon nitride.
9. The solid state mounted bulk acoustic wave resonator with temperature compensation function according to claim 1, wherein: the thickness of the second temperature compensation is 50 nm-300 nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110681925.7A CN113328719B (en) | 2021-06-19 | 2021-06-19 | Solid assembly type bulk acoustic wave resonator with temperature compensation function |
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| CN202110681925.7A CN113328719B (en) | 2021-06-19 | 2021-06-19 | Solid assembly type bulk acoustic wave resonator with temperature compensation function |
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| CN113328719A CN113328719A (en) | 2021-08-31 |
| CN113328719B true CN113328719B (en) | 2023-10-03 |
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| CN115913164A (en) * | 2022-12-07 | 2023-04-04 | 偲百创(深圳)科技有限公司 | Acoustic resonator and manufacturing method thereof |
| CN117310669A (en) * | 2023-11-07 | 2023-12-29 | 海底鹰深海科技股份有限公司 | Manufacturing method of matching layer of underwater acoustic transducer |
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|---|---|---|---|---|
| CN102904546A (en) * | 2012-08-30 | 2013-01-30 | 中兴通讯股份有限公司 | Piezoelectric acoustic wave resonator with adjustable temperature compensation capability |
| CN107317560A (en) * | 2017-05-11 | 2017-11-03 | 华南理工大学 | A kind of temperature-compensating surface acoustic wave device and preparation method thereof |
| CN107733392A (en) * | 2016-08-11 | 2018-02-23 | 三星电机株式会社 | bulk acoustic wave filter device and method for manufacturing the same |
| CN109639251A (en) * | 2018-12-10 | 2019-04-16 | 开元通信技术（厦门）有限公司 | Bulk acoustic wave resonator and preparation method thereof, filter |
| CN110061713A (en) * | 2019-04-02 | 2019-07-26 | 嘉兴宏蓝电子技术有限公司 | A kind of thin film bulk acoustic wave resonator and communication device |
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| TW202007079A (en) * | 2018-07-04 | 2020-02-01 | 國立中山大學 | Solidly mounted resonator |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8253513B2 (en) * | 2010-03-16 | 2012-08-28 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102904546A (en) * | 2012-08-30 | 2013-01-30 | 中兴通讯股份有限公司 | Piezoelectric acoustic wave resonator with adjustable temperature compensation capability |
| CN107733392A (en) * | 2016-08-11 | 2018-02-23 | 三星电机株式会社 | bulk acoustic wave filter device and method for manufacturing the same |
| CN107317560A (en) * | 2017-05-11 | 2017-11-03 | 华南理工大学 | A kind of temperature-compensating surface acoustic wave device and preparation method thereof |
| TW202007079A (en) * | 2018-07-04 | 2020-02-01 | 國立中山大學 | Solidly mounted resonator |
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