JP2018157508A - Acoustic wave device and manufacturing method of the same - Google Patents

Acoustic wave device and manufacturing method of the same Download PDF

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JP2018157508A
JP2018157508A JP2017054821A JP2017054821A JP2018157508A JP 2018157508 A JP2018157508 A JP 2018157508A JP 2017054821 A JP2017054821 A JP 2017054821A JP 2017054821 A JP2017054821 A JP 2017054821A JP 2018157508 A JP2018157508 A JP 2018157508A
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reflector
idt
insulating film
dummy pattern
piezoelectric substrate
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JP6748010B2 (en
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卓也 金子
Takuya Kaneko
卓也 金子
高橋　直樹
Naoki Takahashi
直樹 高橋
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Taiyo Yuden Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To suppress deterioration of a specification of a resonator.SOLUTION: An acoustic wave device comprises: a piezoelectric substrate 10; an IDT 20 that excites an elastic wave provided on the piezoelectric substrate; a reflector 24 provided on an external side in a transmission direction of the elastic wave of the IDT on the piezoelectric substrate; a dummy pattern 26 that includes a film thickness in almost the same film thickness with at least one of the IDT and the reflector, and in which a distance Wd+Dg of an end of the external side and an end of the external side of the reflector is 40 times or more of the film thickness; and an insulation film 14 that is provided so as to cover the IDT, the reflector, and the dummy pattern on the piezoelectric substrate, and in which an unevenness corresponded to the IDT and the reflector is almost uniformed on an upper surface.SELECTED DRAWING: Figure 6

Description

本発明は、弾性波デバイスおよびその製造方法に関し、例えばＩＤＴを有する弾性波デバイスおよびその製造方法に関する。   The present invention relates to an acoustic wave device and a manufacturing method thereof, for example, an acoustic wave device having an IDT and a manufacturing method thereof.

弾性表面波共振器では、圧電基板上にＩＤＴ（Interdigital Transducer）および反射器を設け、ＩＤＴおよび反射器を覆うように絶縁体膜を設けることが知られている（例えば特許文献１、２）。絶縁膜の周波数温度係数を圧電基板と逆符号とすることで、弾性波デバイスの周波数温度係数を改善できる。   In a surface acoustic wave resonator, it is known that an IDT (Interdigital Transducer) and a reflector are provided on a piezoelectric substrate, and an insulator film is provided so as to cover the IDT and the reflector (for example, Patent Documents 1 and 2). By setting the frequency temperature coefficient of the insulating film to the opposite sign to that of the piezoelectric substrate, the frequency temperature coefficient of the acoustic wave device can be improved.

国際公開２０１０／１０１１６６号明細書WO 2010/101166 Specification 特開２０１５−７３３０８号公報JP-A-2015-73308

ＩＤＴおよび反射器上に絶縁膜を形成すると、絶縁膜の上面にＩＤＴに対応する凹凸が形成される。そこで、絶縁膜の上面をＣＭＰ（Chemical Mechanical Polishing)法を用い平坦にする。しかし、ＣＭＰ法を用い絶縁膜を平坦化すると、共振器上の絶縁膜の膜厚がＩＤＴ上の絶縁膜の膜厚より小さくなる。これにより共振器の特性が劣化してしまう。   When an insulating film is formed on the IDT and the reflector, irregularities corresponding to the IDT are formed on the upper surface of the insulating film. Therefore, the upper surface of the insulating film is flattened using a CMP (Chemical Mechanical Polishing) method. However, when the insulating film is planarized using the CMP method, the thickness of the insulating film on the resonator becomes smaller than the thickness of the insulating film on the IDT. This degrades the characteristics of the resonator.

本発明は、上記課題に鑑みなされたものであり、共振器の特性の劣化を抑制することを目的とする。   The present invention has been made in view of the above problems, and an object of the present invention is to suppress deterioration of the characteristics of a resonator.

本発明は、圧電基板と、前記圧電基板上に設けられた弾性波を励振するＩＤＴと、前記圧電基板上の前記ＩＤＴの前記弾性波の伝搬方向における外側に設けられた反射器と、前記圧電基板上の前記反射器の前記伝搬方向における外側に設けられ、前記ＩＤＴおよび前記反射器の少なくとも一方と略同じ膜厚を有し、外側の端と前記反射器の外側の端との距離が前記膜厚の４０倍以上であるダミーパターンと、前記圧電基板上に、前記ＩＤＴ、前記反射器および前記ダミーパターンを覆うように設けられ、上面に前記ＩＤＴおよび前記反射器に対応する凸凹が略平坦化された絶縁膜と、を具備する弾性波デバイスである。   The present invention includes a piezoelectric substrate, an IDT that excites an elastic wave provided on the piezoelectric substrate, a reflector provided outside the IDT on the piezoelectric substrate in the propagation direction of the elastic wave, and the piezoelectric The reflector on the substrate is provided outside in the propagation direction, has substantially the same film thickness as at least one of the IDT and the reflector, and the distance between the outer end and the outer end of the reflector is A dummy pattern having a thickness of 40 times or more, and the piezoelectric substrate are provided so as to cover the IDT, the reflector and the dummy pattern, and unevenness corresponding to the IDT and the reflector is substantially flat on the upper surface. And an insulating film formed into an elastic wave.

上記構成において、前記反射器と前記ダミーパターンとの間のギャップの幅は、前記ＩＤＴおよび前記反射器の隣接する電極指間のギャップの幅の２倍以下である構成とすることができる。   The said structure WHEREIN: The width | variety of the gap between the said reflector and the said dummy pattern can be set as the structure which is 2 times or less of the width of the gap between the electrode fingers which adjoin the said IDT and the said reflector.

上記構成において、前記ダミーパターンは、開口のない一体パターンである構成とすることができる。   The said structure WHEREIN: The said dummy pattern can be set as the structure which is an integrated pattern without an opening.

前記ダミーパターンは、複数のパターンを含み、前記複数のパターンの間のギャップの前記伝搬方向の幅は、前記ＩＤＴおよび前記反射器の隣接する電極指間のギャップの幅の２倍以下である構成とすることができる。   The dummy pattern includes a plurality of patterns, and the width of the gap between the plurality of patterns in the propagation direction is not more than twice the width of the gap between the electrode fingers adjacent to the IDT and the reflector. It can be.

前記ダミーパターンは、開口を含み、前記開口の前記伝搬方向の幅は前記ＩＤＴおよび前記反射器の隣接する電極指間のギャップの幅の２倍以下である構成とすることができる。   The dummy pattern may include an opening, and the width of the opening in the propagation direction may be less than or equal to twice the width of the gap between adjacent electrode fingers of the IDT and the reflector.

上記構成において、前記圧電基板はニオブ酸リチウム基板またはタンタル酸リチウム基板であり、前記絶縁膜は酸化シリコン膜である構成とすることができる。   In the above configuration, the piezoelectric substrate may be a lithium niobate substrate or a lithium tantalate substrate, and the insulating film may be a silicon oxide film.

本発明は、圧電基板上に、弾性波を励振するＩＤＴと、前記ＩＤＴの前記弾性波の伝搬方向における外側に設けられた反射器と、前記反射器の前記伝搬方向における外側に設けられ前記ＩＤＴおよび前記反射器の少なくとも一方と略同じ膜厚を有し、外側の端と前記反射器の外側の端との距離が前記膜厚の４０倍以上であるダミーパターンと、を形成する工程と、前記圧電基板上に、前記ＩＤＴ、前記反射器および前記ダミーパターンを覆うように絶縁膜を形成する工程と、前記絶縁膜の上面に形成された前記ＩＤＴおよび前記反射器に対応する凸凹を略平坦化するように前記絶縁膜の上面をＣＭＰ法を用い平坦化する工程と、を含む弾性波デバイスの製造方法である。   The present invention includes an IDT for exciting an elastic wave on a piezoelectric substrate, a reflector provided outside the IDT in the propagation direction of the elastic wave, and an IDT provided outside the reflector in the propagation direction. Forming a dummy pattern having substantially the same film thickness as at least one of the reflectors, and a distance between an outer end and the outer end of the reflector being 40 times or more of the film thickness; Forming an insulating film on the piezoelectric substrate so as to cover the IDT, the reflector and the dummy pattern, and unevenness corresponding to the IDT and the reflector formed on the upper surface of the insulating film are substantially flat. And flattening the upper surface of the insulating film by using a CMP method so as to achieve the same.

本発明によれば、共振器の特性の劣化を抑制することができる。   According to the present invention, it is possible to suppress the deterioration of the characteristics of the resonator.

図１（ａ）は、比較例１に係る弾性波デバイスの平面図、図１（ｂ）は、図１（ａ）のＡ−Ａ断面図である。FIG. 1A is a plan view of an acoustic wave device according to Comparative Example 1, and FIG. 1B is a cross-sectional view taken along line AA in FIG. 図２（ａ）および図２（ｂ）は、比較例１に係る弾性波デバイスの製造方法を示す断面図である。2A and 2B are cross-sectional views illustrating a method for manufacturing an acoustic wave device according to Comparative Example 1. FIG. 図３（ａ）および図３（ｂ）は、比較例１に係る弾性波デバイスの断面図である。3A and 3B are cross-sectional views of the acoustic wave device according to Comparative Example 1. FIG. 図４（ａ）は、共振器ＡおよびＢの通過特性、反射器ＡおよびＢの反射特性を示す図、図４（ｂ）は共振器ＡおよびＢの共振周波数付近の拡大図である。4A is a diagram showing the pass characteristics of the resonators A and B and the reflection characteristics of the reflectors A and B, and FIG. 4B is an enlarged view of the vicinity of the resonance frequency of the resonators A and B. 図５は、金属膜の膜厚Ｈ１に対する距離Ｌを示す図である。FIG. 5 is a diagram illustrating the distance L with respect to the film thickness H1 of the metal film. 図６（ａ）は、実施例１に係る弾性波デバイスの平面図、図６（ｂ）は、図６（ａ）のＡ−Ａ断面図である。6A is a plan view of the acoustic wave device according to the first embodiment, and FIG. 6B is a cross-sectional view taken along line AA of FIG. 6A. 図７（ａ）から図７（ｄ）は、実施例１に係る弾性波デバイスの製造方法を示す断面図である。FIG. 7A to FIG. 7D are cross-sectional views illustrating the method for manufacturing the acoustic wave device according to the first embodiment. 図８（ａ）および図８（ｂ）は、実施例１の変形例１および２に係る弾性波デバイスの平面図である。FIG. 8A and FIG. 8B are plan views of the acoustic wave devices according to the first and second modifications of the first embodiment. 図９は、実施例２に係るフィルタの平面図である。FIG. 9 is a plan view of the filter according to the second embodiment.

図１（ａ）は、比較例１に係る弾性波デバイスの平面図、図１（ｂ）は、図１（ａ）のＡ−Ａ断面図である。図１（ａ）および図１（ｂ）に示すように、１ポート共振器２５では、圧電基板１０上にＩＤＴ２０および反射器２４が形成されている。ＩＤＴ２０および反射器２４は、圧電基板１０に形成された金属膜１２により形成される。ＩＤＴ２０は、対向する一対の櫛型電極２２を備える。櫛型電極２２は、複数の電極指２１と、複数の電極指２１が接続されたバスバー２３と、を備える。一対の櫛型電極２２は、電極指２１がほぼ互い違いとなるように、対向して設けられている。   FIG. 1A is a plan view of an acoustic wave device according to Comparative Example 1, and FIG. 1B is a cross-sectional view taken along line AA in FIG. As shown in FIGS. 1A and 1B, in the 1-port resonator 25, the IDT 20 and the reflector 24 are formed on the piezoelectric substrate 10. The IDT 20 and the reflector 24 are formed by the metal film 12 formed on the piezoelectric substrate 10. The IDT 20 includes a pair of opposing comb electrodes 22. The comb-shaped electrode 22 includes a plurality of electrode fingers 21 and a bus bar 23 to which the plurality of electrode fingers 21 are connected. The pair of comb-shaped electrodes 22 are provided facing each other such that the electrode fingers 21 are substantially staggered.

一対の櫛型電極２２の電極指２１が励振する弾性波は、主に電極指２１の配列方向に伝搬する。１つの櫛形電極２２の電極指２１のピッチがほぼ弾性波の波長λとなる。反射器２４は、弾性波を反射する。これにより弾性波のエネルギーがＩＤＴ２０内に閉じ込められる。圧電基板１０上にＩＤＴ２０および反射器２４を覆うように絶縁膜１４が設けられている。圧電基板１０は、例えばタンタル酸リチウム基板またはニオブ酸リチウム基板である。金属膜１２は、例えばアルミニウム膜または銅膜である。絶縁膜１４は、例えば酸化シリコン膜（弗素等の元素が添加されていてもよい）である。上記例示した材料の場合、圧電基板１０の周波数温度係数（例えば共振周波数の温度係数）は負である。一方、絶縁膜１４の周波数温度係数は正である。具体的には、圧電基板１０の弾性定数と絶縁膜１４の弾性定数の温度係数とが逆符号である。これにより、絶縁膜１４を設けることで、周波数温度係数を０に近づけることができる。   The elastic wave excited by the electrode fingers 21 of the pair of comb-shaped electrodes 22 propagates mainly in the arrangement direction of the electrode fingers 21. The pitch of the electrode fingers 21 of one comb-shaped electrode 22 is substantially the wavelength λ of the elastic wave. The reflector 24 reflects elastic waves. Thereby, the energy of the elastic wave is confined in the IDT 20. An insulating film 14 is provided on the piezoelectric substrate 10 so as to cover the IDT 20 and the reflector 24. The piezoelectric substrate 10 is, for example, a lithium tantalate substrate or a lithium niobate substrate. The metal film 12 is, for example, an aluminum film or a copper film. The insulating film 14 is, for example, a silicon oxide film (an element such as fluorine may be added). In the case of the materials exemplified above, the frequency temperature coefficient of the piezoelectric substrate 10 (for example, the temperature coefficient of the resonance frequency) is negative. On the other hand, the frequency temperature coefficient of the insulating film 14 is positive. Specifically, the elastic constant of the piezoelectric substrate 10 and the temperature coefficient of the elastic constant of the insulating film 14 have opposite signs. Thereby, the frequency temperature coefficient can be brought close to 0 by providing the insulating film 14.

図２（ａ）および図２（ｂ）は、比較例１に係る弾性波デバイスの製造方法を示す断面図である。図２（ａ）に示すように、共振器２５の電極指２１を形成する金属膜１２上に絶縁膜１４を例えばＣＶＤ（Chemical Vapor Deposition）法を用い形成する。絶縁膜１４の上面には、電極指２１に対応する凹凸１６が形成される。電極指２１の膜厚Ｈ１と凹凸１６の高さＨ２とはほぼ同じである。絶縁膜１４の上面に凹凸１６が形成されると、弾性波が凹凸１６で反射され、フィルタ特性が劣化する。そこで、図２（ｂ）に示すように、絶縁膜１４の上面をＣＭＰ法を用い平坦化する。これにより、電極指２１に対応する凹凸１６は略平坦化される。   2A and 2B are cross-sectional views illustrating a method for manufacturing an acoustic wave device according to Comparative Example 1. FIG. As shown in FIG. 2A, the insulating film 14 is formed on the metal film 12 forming the electrode fingers 21 of the resonator 25 by using, for example, a CVD (Chemical Vapor Deposition) method. Concavities and convexities 16 corresponding to the electrode fingers 21 are formed on the upper surface of the insulating film 14. The film thickness H1 of the electrode finger 21 and the height H2 of the unevenness 16 are substantially the same. When the unevenness 16 is formed on the upper surface of the insulating film 14, the elastic wave is reflected by the unevenness 16, and the filter characteristics are deteriorated. Therefore, as shown in FIG. 2B, the upper surface of the insulating film 14 is planarized using the CMP method. Thereby, the unevenness 16 corresponding to the electrode finger 21 is substantially flattened.

図３（ａ）および図３（ｂ）は、比較例１に係る弾性波デバイスの断面図である。図２（ｂ）に示すように、電極指２１に対応する絶縁膜１４の上面の凹凸１６は消失するものの、図３（ａ）に示すように、共振器２５に対応する絶縁膜１４の凹凸１７が生じる。共振器２５が形成されている領域は凸となり共振器２５が形成されていない領域は凹となる。このように、ＣＭＰ法により絶縁膜１４の上面を平坦化すると、電極指２１のピッチ相当の数μｍ程度に範囲では平坦化されるものの、共振器２５の大きさ数１００μｍ程度の範囲では凹凸１７が形成されてしまう。   3A and 3B are cross-sectional views of the acoustic wave device according to Comparative Example 1. FIG. As shown in FIG. 2B, the unevenness 16 on the upper surface of the insulating film 14 corresponding to the electrode finger 21 disappears, but the unevenness of the insulating film 14 corresponding to the resonator 25 as shown in FIG. 17 occurs. The region where the resonator 25 is formed is convex, and the region where the resonator 25 is not formed is concave. As described above, when the upper surface of the insulating film 14 is flattened by the CMP method, it is flattened in the range of several μm corresponding to the pitch of the electrode fingers 21, but the unevenness 17 is provided in the range of the size of the resonator 25 of several hundred μm. Will be formed.

図３（ｂ）に示すように、共振器２５の端部では、絶縁膜１４が薄くなってしまう。共振器２５の端部における絶縁膜１４の平坦面からの高さの減少量をＨ３とする。共振器２５から絶縁膜１４の上面が平坦面から低くなる範囲の距離をＬとする。Ｈ３は最大で７０ｎｍである。   As shown in FIG. 3B, the insulating film 14 becomes thin at the end of the resonator 25. The amount of decrease in height from the flat surface of the insulating film 14 at the end of the resonator 25 is defined as H3. Let L be the distance in the range in which the upper surface of the insulating film 14 is lowered from the flat surface from the resonator 25. H3 is 70 nm at the maximum.

反射器２４上の絶縁膜１４がＩＤＴ２０上の絶縁膜１４より７０ｎｍ薄いときの共振器特性をシミュレーションした。シミュレーション条件は以下である。
圧電基板１０：１２８°Ｙ回転Ｘ伝搬ニオブ酸リチウム基板
金属膜１２：膜厚が３３８ｎｍの銅膜
絶縁膜１４：膜厚が９２７ｎｍの酸化シリコン膜
ＩＤＴ２０：開口長が２０λ、対数が５０対
反射器２４：対数が１０対
以下の共振器ＡおよびＢについてシミュレーションした。
共振器Ａ：反射器２４上の絶縁膜１４の膜厚がＩＤＴ２０上の絶縁膜１４と同じ
共振器Ｂ：反射器２４上の絶縁膜１４の膜厚がＩＤＴ２０上の絶縁膜１４より７０ｎｍ薄い The resonator characteristics when the insulating film 14 on the reflector 24 is 70 nm thinner than the insulating film 14 on the IDT 20 were simulated. The simulation conditions are as follows.
Piezoelectric substrate 10: 128 ° Y rotation X propagation lithium niobate substrate Metal film 12: Copper film insulating film 14 having a thickness of 338 nm Silicon oxide film IDT 20 having a film thickness of 927 nm: Opening length 20λ, logarithm 50 pairs 24: Resonators A and B having a logarithm of 10 or less were simulated.
Resonator A: The thickness of the insulating film 14 on the reflector 24 is the same as that of the insulating film 14 on the IDT 20. Resonator B: The thickness of the insulating film 14 on the reflector 24 is 70 nm thinner than the insulating film 14 on the IDT 20.

図４（ａ）は、共振器ＡおよびＢの通過特性、反射器ＡおよびＢの反射特性を示す図、図４（ｂ）は共振器ＡおよびＢの共振周波数付近の拡大図である。反射器ＡおよびＢはそれぞれ共振器ＡおよびＢの反射器である。図４（ａ）に示すように、反射器Ｂの反射帯域は反射器Ａより高周波側にシフトしている。図４（ｂ）に示すように、共振器Ｂは共振器Ａより共振周波数付近の減衰量が大きくなっている。これにより、共振器Ｂは共振器Ａより共振周波数におけるＱ値が小さくなる。これは、共振器Ｂでは共振周波数付近の反射器Ｂの反射特性が劣化するため、弾性波の閉じ込めが劣化したためと考えられる。このように、反射器２４上の絶縁膜１４の膜厚が薄くなると、共振器２５の共振周波数におけるＱ値が劣化する。   4A is a diagram showing the pass characteristics of the resonators A and B and the reflection characteristics of the reflectors A and B, and FIG. 4B is an enlarged view of the vicinity of the resonance frequency of the resonators A and B. Reflectors A and B are the reflectors of resonators A and B, respectively. As shown in FIG. 4A, the reflection band of the reflector B is shifted to the high frequency side from the reflector A. As shown in FIG. 4B, the resonator B has a larger attenuation near the resonance frequency than the resonator A. As a result, the resonator B has a smaller Q value at the resonance frequency than the resonator A. This is presumably because, in the resonator B, the reflection characteristics of the reflector B in the vicinity of the resonance frequency are deteriorated, and the confinement of the elastic wave is deteriorated. Thus, when the film thickness of the insulating film 14 on the reflector 24 is reduced, the Q value at the resonance frequency of the resonator 25 is deteriorated.

図３（ｂ）における金属膜１２の膜厚Ｈ１に対する距離Ｌを測定した。測定したサンプルは、金属膜１２を銅膜、絶縁膜１４を酸化シリコン膜とした。ＣＭＰ法による酸化シリコン膜の研磨は、スラリーとしてセリアスラリーを用い、絶縁膜１４の上面の凹凸１６がほぼなくなるように行った。   The distance L with respect to the film thickness H1 of the metal film 12 in FIG. In the measured sample, the metal film 12 was a copper film, and the insulating film 14 was a silicon oxide film. Polishing of the silicon oxide film by the CMP method was performed using ceria slurry as the slurry so that the unevenness 16 on the upper surface of the insulating film 14 was almost eliminated.

図５は、金属膜の膜厚Ｈ１に対する距離Ｌを示す図である。図５に示すように、膜厚Ｈ１が大きくなると距離Ｌが大きくなる。距離Ｌ（μｍ）は０．０４×Ｈ１（ｎｍ）と同程度か若干小さい。距離Ｌと膜厚Ｈ１の単位を統一すると、絶縁膜１４の膜厚が薄くなるのは共振器２５の端から約４０×Ｈ１の範囲であることが分かった。   FIG. 5 is a diagram illustrating the distance L with respect to the film thickness H1 of the metal film. As shown in FIG. 5, the distance L increases as the film thickness H1 increases. The distance L (μm) is about the same as 0.04 × H1 (nm) or slightly smaller. It was found that when the units of the distance L and the film thickness H1 were unified, the film thickness of the insulating film 14 was reduced in the range of about 40 × H1 from the end of the resonator 25.

上記知見に基づく実施例について説明する。   Examples based on the above findings will be described.

図６（ａ）は、実施例１に係る弾性波デバイスの平面図、図６（ｂ）は、図６（ａ）のＡ−Ａ断面図である。図６（ａ）および図６（ｂ）に示すように、反射器２４の外側の圧電基板１０上にダミーパターン２６が設けられている。ダミーパターン２６は金属膜１２により形成されている。絶縁膜１４はダミーパターン２６を覆うように設けられている。ダミーパターン２６の幅をＷｄ、反射器２４とダミーパターン２６との間のギャップの幅をＤｇ、および隣接する電極指２１間のギャップの幅をＬｇとする。幅Ｗｄ＋幅Ｄｇを４０×Ｈ１以上とする。その他の構成は比較例１と同じであり説明を省略する。   6A is a plan view of the acoustic wave device according to the first embodiment, and FIG. 6B is a cross-sectional view taken along line AA of FIG. 6A. As shown in FIGS. 6A and 6B, a dummy pattern 26 is provided on the piezoelectric substrate 10 outside the reflector 24. The dummy pattern 26 is formed of the metal film 12. The insulating film 14 is provided so as to cover the dummy pattern 26. The width of the dummy pattern 26 is Wd, the gap width between the reflector 24 and the dummy pattern 26 is Dg, and the gap width between the adjacent electrode fingers 21 is Lg. The width Wd + the width Dg is set to 40 × H1 or more. Other configurations are the same as those of the first comparative example, and the description is omitted.

図７（ａ）から図７（ｄ）は、実施例１に係る弾性波デバイスの製造方法を示す断面図である。図７（ａ）に示すように、圧電基板１０を準備する。圧電基板１０は、例えばニオブ酸リチウム基板またはタンタル酸リチウム基板である。図７（ｂ）に示すように、圧電基板１０上に金属膜１２を、蒸着法およびリフトオフ法、またはスパッタリング法またはエッチング法を用い形成する。金属膜１２により、ＩＤＴ２０、反射器２４およびダミーパターン２６が形成される。金属膜１２は、例えば銅膜またはアルミニウム膜である。   FIG. 7A to FIG. 7D are cross-sectional views illustrating the method for manufacturing the acoustic wave device according to the first embodiment. As shown in FIG. 7A, a piezoelectric substrate 10 is prepared. The piezoelectric substrate 10 is, for example, a lithium niobate substrate or a lithium tantalate substrate. As shown in FIG. 7B, the metal film 12 is formed on the piezoelectric substrate 10 using a vapor deposition method and a lift-off method, or a sputtering method or an etching method. The metal film 12 forms an IDT 20, a reflector 24, and a dummy pattern 26. The metal film 12 is, for example, a copper film or an aluminum film.

図７（ｃ）に示すように、圧電基板１０上にＩＤＴ２０、反射器２４およびダミーパターン２６を覆うように絶縁膜１４を、例えばＣＶＤ法を用い形成する。絶縁膜１４は例えば酸化シリコン膜である。酸化シリコン膜には弗素等の元素が添加されていてもよい。絶縁膜１４の上面にはＩＤＴ２０、反射器２４およびダミーパターン２６に対応する凹凸１６が形成される。   As shown in FIG. 7C, the insulating film 14 is formed on the piezoelectric substrate 10 so as to cover the IDT 20, the reflector 24, and the dummy pattern 26 by using, for example, a CVD method. The insulating film 14 is a silicon oxide film, for example. An element such as fluorine may be added to the silicon oxide film. Concavities and convexities 16 corresponding to the IDT 20, the reflector 24, and the dummy pattern 26 are formed on the upper surface of the insulating film 14.

図７（ｄ）に示すように、絶縁膜１４の上面をＣＭＰ法を用い平坦化する。これにより、電極指２１に対応する凹凸１６はほとんど消失する。また、ダミーパターン２６によりＩＤＴ２０上の絶縁膜１４の膜厚と反射器２４上の絶縁膜１４の膜厚とはほぼ同じとなる。   As shown in FIG. 7D, the upper surface of the insulating film 14 is planarized using a CMP method. Thereby, the unevenness 16 corresponding to the electrode finger 21 is almost lost. The dummy pattern 26 makes the film thickness of the insulating film 14 on the IDT 20 and the film thickness of the insulating film 14 on the reflector 24 substantially the same.

実施例１によれば、反射器２４の弾性波の伝搬方向における外側にダミーパターン２６が設けられている。ダミーパターン２６、ＩＤＴ２０および反射器２４の膜厚Ｈ１は、製造ばらつきの範囲内で略同じである。反射器２４の外側の端とダミーパターン２６の外側の端との距離（すなわちＷｄ＋Ｄｇ）は、膜厚Ｈ１の４０倍以上である。絶縁膜１４の上面にＩＤＴ２０および反射器２４に対応する凹凸１６はＣＭＰ法で平坦化した程度に平坦化されている。例えば、図７（ｄ）のように、絶縁膜１４の上面に形成されたＩＤＴ２０および反射器２４に対応する凹凸１６を平坦化するように絶縁膜１４の上面をＣＭＰ法を用い平坦化する。これにより、図４（ｂ）のような反射器２４上の膜厚が薄くなることによる共振器２５の特性の劣化を抑制できる   According to the first embodiment, the dummy pattern 26 is provided outside the reflector 24 in the elastic wave propagation direction. The film thickness H1 of the dummy pattern 26, the IDT 20, and the reflector 24 is substantially the same within the range of manufacturing variations. The distance between the outer end of the reflector 24 and the outer end of the dummy pattern 26 (ie, Wd + Dg) is 40 times or more the film thickness H1. The unevenness 16 corresponding to the IDT 20 and the reflector 24 is flattened on the upper surface of the insulating film 14 to the extent that it is flattened by the CMP method. For example, as shown in FIG. 7D, the upper surface of the insulating film 14 is flattened by CMP so as to flatten the irregularities 16 corresponding to the IDT 20 and the reflector 24 formed on the upper surface of the insulating film 14. Thereby, the deterioration of the characteristics of the resonator 25 due to the thin film thickness on the reflector 24 as shown in FIG. 4B can be suppressed.

ダミーパターン２６の膜厚は、ＩＤＴ２０および反射器２４の少なくとも一方の膜厚と略同じであればよい。また、ダミーパターン２６とＩＤＴ２０および反射器２４の少なくとも一方とを同時に形成するため、ダミーパターン２６は、ＩＤＴ２０および反射器２４の少なくとも一方と同じ材料からなることが好ましい、   The film thickness of the dummy pattern 26 may be substantially the same as the film thickness of at least one of the IDT 20 and the reflector 24. In order to form the dummy pattern 26 and at least one of the IDT 20 and the reflector 24 at the same time, the dummy pattern 26 is preferably made of the same material as at least one of the IDT 20 and the reflector 24.

ＩＤＴ２０上の絶縁膜１４の膜厚と反射器２４上の膜厚とを略同じとするため、Ｗｄ＋Ｄｇは５０×Ｈ１以上が好ましく、１００×Ｈ１以上がより好ましい。Ｗｄ＋Ｄｇが大きいとチップサイズが大きくなる。このため、Ｗｄ＋Ｄｇは１０００×Ｈ１以下が好ましく、２００×Ｈ１以下がより好ましい。   In order to make the film thickness of the insulating film 14 on the IDT 20 and the film thickness on the reflector 24 substantially the same, Wd + Dg is preferably 50 × H1 or more, and more preferably 100 × H1 or more. If Wd + Dg is large, the chip size increases. For this reason, Wd + Dg is preferably 1000 × H1 or less, and more preferably 200 × H1 or less.

反射器２４とダミーパターン２６との間のギャップの幅Ｄｇが大きいと、反射器２４とダミーパターン２６との間の絶縁膜１４の上面に凹部が形成されてしまう。このため、幅Ｄｇは隣接する電極指２１間のギャップの幅Ｌｇの２倍以下であることが好ましく、Ｌｇ以下がより好ましい。幅Ｄｇは０より大きく、Ｌｇ／２以上であることがより好ましい。   If the width Dg of the gap between the reflector 24 and the dummy pattern 26 is large, a recess is formed on the upper surface of the insulating film 14 between the reflector 24 and the dummy pattern 26. For this reason, the width Dg is preferably equal to or less than twice the width Lg of the gap between the adjacent electrode fingers 21, and more preferably equal to or less than Lg. The width Dg is more than 0 and more preferably Lg / 2 or more.

絶縁膜１４を温度補償膜として用いる場合、絶縁膜１４の弾性定数を圧電基板１０と逆符号とすることが好ましい。圧電基板１０がニオブ酸リチウム基板またはタンタル酸リチウム基板の場合、絶縁膜１４は酸化シリコン膜（弗素等の元素を含んでもよい）であることが好ましい。絶縁膜１４は、保護膜として機能してもよい。   When the insulating film 14 is used as a temperature compensation film, it is preferable that the elastic constant of the insulating film 14 is opposite to that of the piezoelectric substrate 10. When the piezoelectric substrate 10 is a lithium niobate substrate or a lithium tantalate substrate, the insulating film 14 is preferably a silicon oxide film (which may contain an element such as fluorine). The insulating film 14 may function as a protective film.

［実施例１の変形例］
図８（ａ）および図８（ｂ）は、実施例１の変形例１および２に係る弾性波デバイスの平面図である。図８（ａ）に示すように、ダミーパターン２６は複数のパターン２６ａを含む。絶縁膜１４の上面に複数のパターン２６ａに対応する凹凸が形成されないように、複数のパターン２６ａ間のギャップの幅Ｗｇは隣接する電極指２１間のギャップの幅Ｌｇの２倍以下であることが好ましく、Ｌｇ以下がより好ましい。幅Ｗｇは０より大きく、Ｌｇ／２以上であることがより好ましい。複数のパターン２６ａの弾性波の伝搬方向の幅は、電極指２１の弾性波の伝搬方向の幅以上が好ましい。 [Modification of Example 1]
FIG. 8A and FIG. 8B are plan views of the acoustic wave devices according to the first and second modifications of the first embodiment. As shown in FIG. 8A, the dummy pattern 26 includes a plurality of patterns 26a. The width Wg of the gap between the plurality of patterns 26 a may be less than or equal to twice the width Lg of the gap between the adjacent electrode fingers 21 so that the unevenness corresponding to the plurality of patterns 26 a is not formed on the upper surface of the insulating film 14. Preferably, Lg or less is more preferable. The width Wg is more than 0 and more preferably Lg / 2 or more. The width of the plurality of patterns 26a in the propagation direction of the elastic wave is preferably equal to or greater than the width of the electrode finger 21 in the propagation direction of the elastic wave.

図８（ｂ）に示すように、ダミーパターン２６は開口２６ｂを含む。絶縁膜１４の上面に開口２６ｂに対応する凹凸が形成されないように、開口２６ｂの幅Ｗｇは隣接する電極指２１間のギャップの幅Ｌｇの２倍以下であることが好ましく、Ｌｇ以下がより好ましい。幅Ｗｇは０より大きく、Ｌｇ／２以上であることがより好ましい。隣接する開口２６ｂ間のダミーパターン２６の弾性波の伝搬方向の幅は、電極指２１の弾性波の伝搬方向の幅以上が好ましい。   As shown in FIG. 8B, the dummy pattern 26 includes an opening 26b. The width Wg of the opening 26b is preferably not more than twice the width Lg of the gap between the adjacent electrode fingers 21, and more preferably not more than Lg, so that the unevenness corresponding to the opening 26b is not formed on the upper surface of the insulating film 14. . The width Wg is more than 0 and more preferably Lg / 2 or more. The width of the dummy pattern 26 in the propagation direction of the elastic wave between the adjacent openings 26b is preferably equal to or greater than the width of the electrode finger 21 in the propagation direction of the elastic wave.

実施例１のように、ダミーパターン２６は開口のない一体パターンでもよいし、実施例１の変形例１および２のように、ダミーパターン２６は複数のパターン２６ａおよび／または開口２６ｂを含んでもよい。パターン２６ａおよび開口２６ｂの平面形状は、スリット状、多角形状その他でもよい。   As in the first embodiment, the dummy pattern 26 may be an integrated pattern without an opening, or as in the first and second modifications of the first embodiment, the dummy pattern 26 may include a plurality of patterns 26a and / or openings 26b. . The planar shape of the pattern 26a and the opening 26b may be a slit shape, a polygonal shape, or the like.

図９は、実施例２に係るフィルタの平面図である。図９に示すように、圧電基板１０上に、共振器２５、配線３０、パッド３２、ダミーパターン２６、３４および３６が設けられている。共振器２５は直列共振器Ｓ１からＳ４および並列共振器Ｐ１からＰ３を含む。パッド３２は入力端子Ｉｎ、出力端子Ｏｕｔおよびグランド端子Ｇｎｄを含む。   FIG. 9 is a plan view of the filter according to the second embodiment. As shown in FIG. 9, the resonator 25, the wiring 30, the pad 32, and the dummy patterns 26, 34 and 36 are provided on the piezoelectric substrate 10. The resonator 25 includes series resonators S1 to S4 and parallel resonators P1 to P3. The pad 32 includes an input terminal In, an output terminal Out, and a ground terminal Gnd.

入力端子Ｉｎと出力端子Ｏｕｔとの間に直列共振器Ｓ１からＳ４が配線３０を介し直列に接続されている。直列共振器Ｓ１およびＳ２は各々直列に２分割されている。入力端子Ｉｎと出力端子Ｏｕｔとの間に並列共振器Ｐ１からＰ３が配線３０を介し並列に接続されている。共振器２５の反射器の外側にダミーパターン２６が設けられている。共振器２５、配線３０およびパッド３２の隙間にダミーパターン３４が設けられている。圧電基板１０の周縁にドット状のダミーパターン３６が設けられている。   Series resonators S1 to S4 are connected in series via the wiring 30 between the input terminal In and the output terminal Out. Series resonators S1 and S2 are each divided into two in series. Parallel resonators P1 to P3 are connected in parallel via the wiring 30 between the input terminal In and the output terminal Out. A dummy pattern 26 is provided outside the reflector of the resonator 25. A dummy pattern 34 is provided in the gap between the resonator 25, the wiring 30 and the pad 32. A dot-like dummy pattern 36 is provided on the periphery of the piezoelectric substrate 10.

ダミーパターン２６を設けることで、絶縁膜１４の上面を平坦化するときに反射器２４上の絶縁膜１４が薄くなることを抑制できる。ダミーパターン２６は共振器２５の両側の反射器２４のうち、圧電基板１０の縁側の反射器２４の外側に設けることが好ましい。ダミーパターン２６と同じ膜厚のダミーパターン３４および／または３６を設けることで、絶縁膜１４の上面をより平坦化できる。   By providing the dummy pattern 26, it is possible to prevent the insulating film 14 on the reflector 24 from being thinned when the upper surface of the insulating film 14 is planarized. The dummy pattern 26 is preferably provided outside the reflector 24 on the edge side of the piezoelectric substrate 10 among the reflectors 24 on both sides of the resonator 25. By providing the dummy patterns 34 and / or 36 having the same film thickness as the dummy pattern 26, the upper surface of the insulating film 14 can be further planarized.

実施例２のように、実施例１およびその変形例の共振器２５およびダミーパターン２６をフィルタに用いることで、フィルタ特性の劣化を抑制できる。   As in the second embodiment, the use of the resonator 25 and the dummy pattern 26 according to the first embodiment and the modifications thereof for the filter can suppress the deterioration of the filter characteristics.

ラダー型フィルタの直列共振器および並列共振器の個数は任意に設計できる。フィルタとしてラダー型フィルタを例に説明したが、フィルタは多重モードフィルタを含んでもよい。実施例２をデュプレクサ等のマルチプレクサに用いてもよい。   The number of series resonators and parallel resonators of the ladder filter can be arbitrarily designed. Although a ladder type filter has been described as an example of the filter, the filter may include a multimode filter. The second embodiment may be used for a multiplexer such as a duplexer.

以上、本発明の実施例について詳述したが、本発明はかかる特定の実施例に限定されるものではなく、特許請求の範囲に記載された本発明の要旨の範囲内において、種々の変形・変更が可能である。   Although the embodiments of the present invention have been described in detail above, the present invention is not limited to such specific embodiments, and various modifications and changes can be made within the scope of the gist of the present invention described in the claims. It can be changed.

１０ 圧電基板
１２ 金属膜
１４ 絶縁膜
１６ 凹凸
２０ ＩＤＴ
２１ 電極指
２２ 櫛形電極
２３ バスバー
２４ 反射器
２５ 共振器
２６ ダミーパターン
２６ａ パターン
２６ｂ 開口
10 Piezoelectric substrate 12 Metal film 14 Insulating film 16 Concavity and convexity 20 IDT
21 Electrode finger 22 Comb electrode 23 Bus bar 24 Reflector 25 Resonator 26 Dummy pattern 26a Pattern 26b Opening

Claims (7)

圧電基板と、
前記圧電基板上に設けられた弾性波を励振するＩＤＴと、
前記圧電基板上の前記ＩＤＴの前記弾性波の伝搬方向における外側に設けられた反射器と、
前記圧電基板上の前記反射器の前記伝搬方向における外側に設けられ、前記ＩＤＴおよび前記反射器の少なくとも一方と略同じ膜厚を有し、外側の端と前記反射器の外側の端との距離が前記膜厚の４０倍以上であるダミーパターンと、
前記圧電基板上に、前記ＩＤＴ、前記反射器および前記ダミーパターンを覆うように設けられ、上面に前記ＩＤＴおよび前記反射器に対応する凸凹が略平坦化された絶縁膜と、
を具備する弾性波デバイス。 A piezoelectric substrate;
An IDT for exciting an elastic wave provided on the piezoelectric substrate;
A reflector provided outside the IDT in the propagation direction of the elastic wave on the piezoelectric substrate;
The distance between the outer end and the outer end of the reflector is provided on the outer side in the propagation direction of the reflector on the piezoelectric substrate and has substantially the same film thickness as at least one of the IDT and the reflector. A dummy pattern that is 40 times or more of the film thickness;
An insulating film provided on the piezoelectric substrate so as to cover the IDT, the reflector, and the dummy pattern, and having an uneven surface corresponding to the IDT and the reflector on the upper surface thereof,
An elastic wave device comprising: 前記反射器と前記ダミーパターンとの間のギャップの幅は、前記ＩＤＴおよび前記反射器の隣接する電極指間のギャップの幅の２倍以下である請求項１記載の弾性波デバイス。   2. The acoustic wave device according to claim 1, wherein a width of a gap between the reflector and the dummy pattern is equal to or less than twice a width of a gap between the IDT and an electrode finger adjacent to the reflector. 前記ダミーパターンは、開口のない一体パターンである請求項１または２記載の弾性波デバイス。   3. The acoustic wave device according to claim 1, wherein the dummy pattern is an integrated pattern without an opening. 前記ダミーパターンは、複数のパターンを含み、前記複数のパターンの間のギャップの前記伝搬方向の幅は、前記ＩＤＴおよび前記反射器の隣接する電極指間のギャップの幅の２倍以下である請求項１または２記載の弾性波デバイス。   The dummy pattern includes a plurality of patterns, and the width of the gap between the plurality of patterns in the propagation direction is not more than twice the width of the gap between adjacent electrode fingers of the IDT and the reflector. Item 3. The acoustic wave device according to Item 1 or 2. 前記ダミーパターンは、開口を含み、前記開口の前記伝搬方向の幅は前記ＩＤＴおよび前記反射器の隣接する電極指間のギャップの幅の２倍以下である請求項１または２記載の弾性波デバイス。   3. The acoustic wave device according to claim 1, wherein the dummy pattern includes an opening, and a width of the opening in the propagation direction is equal to or less than twice a width of a gap between adjacent electrode fingers of the IDT and the reflector. . 前記圧電基板はニオブ酸リチウム基板またはタンタル酸リチウム基板であり、前記絶縁膜は酸化シリコン膜である請求項１から５のいずれか一項記載の弾性波デバイス。   6. The acoustic wave device according to claim 1, wherein the piezoelectric substrate is a lithium niobate substrate or a lithium tantalate substrate, and the insulating film is a silicon oxide film. 圧電基板上に、弾性波を励振するＩＤＴと、前記ＩＤＴの前記弾性波の伝搬方向における外側に設けられた反射器と、前記反射器の前記伝搬方向における外側に設けられ前記ＩＤＴおよび前記反射器の少なくとも一方と略同じ膜厚を有し、外側の端と前記反射器の外側の端との距離が前記膜厚の４０倍以上であるダミーパターンと、を形成する工程と、
前記圧電基板上に、前記ＩＤＴ、前記反射器および前記ダミーパターンを覆うように絶縁膜を形成する工程と、
前記絶縁膜の上面に形成された前記ＩＤＴおよび前記反射器に対応する凸凹を略平坦化するように前記絶縁膜の上面をＣＭＰ法を用い平坦化する工程と、
を含む弾性波デバイスの製造方法。
An IDT for exciting an elastic wave on a piezoelectric substrate, a reflector provided outside the IDT in the propagation direction of the elastic wave, and the IDT and the reflector provided outside the reflector in the propagation direction Forming a dummy pattern having substantially the same film thickness as at least one of the above, and a distance between the outer end and the outer end of the reflector being 40 times or more of the film thickness;
Forming an insulating film on the piezoelectric substrate so as to cover the IDT, the reflector, and the dummy pattern;
Flattening the upper surface of the insulating film using CMP so as to substantially flatten the irregularities corresponding to the IDT and the reflector formed on the upper surface of the insulating film;
A method for manufacturing an acoustic wave device.
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