CN113810014A - Interdigital bulk acoustic wave resonator and filter - Google Patents
Interdigital bulk acoustic wave resonator and filter Download PDFInfo
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- CN113810014A CN113810014A CN202111115882.2A CN202111115882A CN113810014A CN 113810014 A CN113810014 A CN 113810014A CN 202111115882 A CN202111115882 A CN 202111115882A CN 113810014 A CN113810014 A CN 113810014A
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- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000003475 lamination Methods 0.000 claims abstract 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- PILOURHZNVHRME-UHFFFAOYSA-N [Na].[Ba] Chemical compound [Na].[Ba] PILOURHZNVHRME-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000003491 array Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 10
- 238000004891 communication Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
Abstract
An interdigital bulk acoustic wave resonator and a filter relate to the technical field of resonators. The interdigital bulk acoustic wave resonator comprises a substrate and a piezoelectric lamination layer positioned on the substrate, wherein the piezoelectric lamination layer comprises a piezoelectric layer positioned on the substrate, and a first group of interdigital electrodes and a second group of interdigital electrodes positioned on the piezoelectric layer; wherein the first set of interdigitated electrodes and the second set of interdigitated electrodes each include a plurality of first electrodes, and at least two of the first electrodes have different heights on the piezoelectric layer. The interdigital bulk acoustic wave resonator can realize independent tuning of each mode of the multi-mode resonator by arranging a plurality of interdigital arrays with different heights.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to an interdigital bulk acoustic wave resonator and a filter.
Background
With the rapid development of multiband wireless communication technology, the requirement for implementing high integration and miniaturization of rf front-end devices is increasingly highlighted, and as dual-passband filters and multi-passband filters of front-end devices of wireless communication systems, they are becoming indispensable devices in communication systems due to their characteristics of high selectivity, small size, low cost, and being capable of working in multiple communication bands simultaneously.
Conventional dual and multi-passband filters are typically implemented with multiple single-passband filters in series, or with multimode resonators. However, in the manner of designing a multi-passband filter by serially connecting a plurality of single-passband filters, although parameters such as bandwidth and quality factor of a single passband can be individually adjusted, the physical size of the multi-passband filter is generally large; although the multi-band-pass filter is designed by using the multi-mode resonator, the multi-band-pass filter can achieve a smaller physical size, but the conventional multi-mode resonator needs to simultaneously use multiple propagation modes of the bulk acoustic wave, and the bulk acoustic waves of different propagation modes have different propagation forms, propagation paths and propagation speeds, so that parameters such as bandwidth, quality factors and the like of each resonance mode of the multi-mode resonator can be adjusted only within a certain range, and thus, the multi-band-pass filter has certain limitations. Therefore, how to reduce the physical volumes of the dual-passband filter and the multi-passband filter, and realizing independent tuning of multiple modes, so that the multiple modes do not interfere with each other, becomes a technical problem to be solved urgently at present.
Disclosure of Invention
The invention aims to provide an interdigital bulk acoustic wave resonator and a filter, which can realize independent tuning of each mode of a multi-mode resonator by arranging a plurality of interdigital arrays with different heights.
The embodiment of the invention is realized by the following steps:
in one aspect of the invention, an interdigital bulk acoustic wave resonator is provided, which comprises a substrate and a piezoelectric stack layer on the substrate, wherein the piezoelectric stack layer comprises a piezoelectric layer on the substrate and a first group of interdigital electrodes and a second group of interdigital electrodes on the piezoelectric layer, and a cavity is arranged on one side of the substrate close to the piezoelectric stack layer; wherein the first set of interdigitated electrodes and the second set of interdigitated electrodes each include a plurality of first electrodes, and at least two of the first electrodes have different heights on the piezoelectric layer. The interdigital bulk acoustic wave resonator can realize independent tuning of each mode of the multi-mode resonator by arranging a plurality of interdigital arrays with different heights.
Optionally, the plurality of first electrodes have two different height values on the piezoelectric layer.
Optionally, the plurality of first electrodes have three different height values on the piezoelectric layer.
Optionally, the interdigital bulk acoustic wave resonator further comprises a third interdigital electrode and a fourth interdigital electrode located between the piezoelectric layer and the substrate, each of the third interdigital electrode and the fourth interdigital electrode comprises a plurality of second electrodes, and at least two of the second electrodes have different heights on the piezoelectric layer.
Optionally, the plurality of second electrodes exhibit two or three different heights on the piezoelectric layer.
Optionally, the height of each of the first and second electrodes on the piezoelectric layer is between 1nm and 1 μm.
Optionally, the material of the piezoelectric layer is one or more of aluminum nitride, zinc oxide, lithium niobate, lithium tantalate, lead zirconate titanate piezoelectric ceramics, and barium sodium niobate.
Optionally, the piezoelectric stacks include at least two piezoelectric stacks, and the heights of the first electrodes of any one of the piezoelectric stacks on the piezoelectric layer are different from the heights of the first electrodes of the other piezoelectric stacks on the piezoelectric layer.
In another aspect of the present invention, a filter is provided, which includes a plurality of the interdigital bulk acoustic wave resonators, wherein M interdigital bulk acoustic wave resonators are connected in series to form a series branch, N interdigital bulk acoustic wave resonators are connected in parallel to the series branch, and M and N are positive integers.
Alternatively, the heights of the plurality of first electrodes of the interdigital bulk acoustic wave resonator on the series arm on the piezoelectric layer and the heights of the plurality of first electrodes of the interdigital bulk acoustic wave resonator connected in parallel to the series arm on the piezoelectric layer are different.
The beneficial effects of the invention include:
the interdigital bulk acoustic wave resonator provided by the embodiment comprises a substrate and a piezoelectric stack positioned on the substrate, wherein the piezoelectric stack comprises a piezoelectric layer positioned on the substrate, and a first group of interdigital electrodes and a second group of interdigital electrodes positioned on the piezoelectric layer, and a cavity is arranged on one side of the substrate, which is close to the piezoelectric stack; wherein the first set of interdigitated electrodes and the second set of interdigitated electrodes each include a plurality of first electrodes, and at least two of the first electrodes have different heights on the piezoelectric layer. The first group of interdigital electrodes with the plurality of first electrodes and the second group of interdigital electrodes with the plurality of first electrodes are distributed on the surface of the piezoelectric layer, and the heights of at least two first electrodes on the piezoelectric layer are set to be different, so that multi-mode sound waves can be excited, and therefore an impedance curve obtained by the interdigital bulk acoustic wave resonator provided by the application has a plurality of main resonance peaks, and then each mode of the multi-mode resonator is independently tuned.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of an interdigital bulk acoustic wave resonator according to some embodiments of the present invention;
FIG. 2 is a schematic structural diagram of a piezoelectric stack of an interdigital bulk acoustic wave resonator, according to some embodiments of the present invention;
FIG. 3 is a second schematic structural diagram of a piezoelectric stack of an interdigital bulk acoustic wave resonator, according to some embodiments of the present invention;
fig. 4 is a third schematic structural diagram of a piezoelectric stack of an interdigital bulk acoustic wave resonator, according to some embodiments of the present invention;
FIG. 5 is a fourth schematic structural diagram of a piezoelectric stack of an interdigital bulk acoustic wave resonator, according to some embodiments of the present invention;
FIG. 6 is a fifth schematic structural view of a piezoelectric stack of an interdigital bulk acoustic wave resonator, according to some embodiments of the present invention;
fig. 7 is a second schematic structural diagram of an interdigital bulk acoustic wave resonator according to some embodiments of the present invention;
FIG. 8 is a graph comparing the effect of impedance curves of interdigital bulk acoustic wave resonators in comparison to prior art resonators, according to some embodiments of the present invention;
FIG. 9 is a schematic diagram of a filter according to some embodiments of the invention;
FIG. 10 is a graph of the effect of the filter of FIG. 9;
figure 11 is one of the impedance curve tuning contrast plots for interdigital bulk acoustic wave resonators provided in accordance with some embodiments of the present invention;
figure 12 is a second comparison graph of tuning impedance curves for interdigital bulk acoustic wave resonators, in accordance with some embodiments of the present invention.
Icon: 10-a substrate; 11-a cavity; 20-a piezoelectric stack; 21-a piezoelectric layer; 221-a first set of interdigitated electrodes; 222-a second set of interdigitated electrodes; 223-a first electrode; 231-third interdigitated electrodes; 232-fourth interdigitated electrodes; 233-a second electrode; a-a first direction; b-a second direction.
Detailed Description
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the invention and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the invention and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Relative terms such as "below …" or "above …" or "upper" or "lower" or "horizontal" or "vertical" may be used herein to describe one element, layer or region's relationship to another element, layer or region as illustrated in the figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Referring to fig. 1 and fig. 2, the present embodiment provides an interdigital bulk acoustic wave resonator, which includes a substrate 10 and a piezoelectric stack 20 located on the substrate 10, where the piezoelectric stack 20 includes a piezoelectric layer 21 located on the substrate 10, and a first set of interdigital electrodes 221 and a second set of interdigital electrodes 222 located on the piezoelectric layer 21, and a cavity 11 is formed on a side of the substrate 10 close to the piezoelectric stack 20; wherein the first set 221 and the second set 222 of interdigital electrodes each include a plurality of first electrodes 223, and at least two first electrodes 223 have different heights on the piezoelectric layer 21. The interdigital bulk acoustic wave resonator can realize independent tuning of each mode of the multi-mode resonator by arranging a plurality of interdigital arrays with different heights.
The material of the substrate 10 is not limited in this application, and a person skilled in the art can select a suitable material, such as silicon, by themselves. The cavity 11 in the substrate 10 is formed by pre-filling with a sacrificial material and then by releasing the sacrificial material.
The piezoelectric stack 20 is disposed on the upper surface of the substrate 10 and includes a first set of interdigitated electrodes 221 and a second set of interdigitated electrodes 222. Referring to fig. 2, fig. 2 is a top view of the piezoelectric stack 20, and in this embodiment, two sets of interdigital electrodes (i.e., the first set of interdigital electrodes 221 and the second set of interdigital electrodes 222) are metal electrode patterns crossing each other on the piezoelectric layer 21, similar to fingers of two hands. Note that, in this embodiment, the polarities of the first group of interdigital electrodes 221 and the second group of interdigital electrodes 222 are different. For example, the first set of interdigital electrodes 221 can be a positive electrode, and the second set of interdigital electrodes 222 can be a negative electrode; alternatively, the first set of interdigital electrodes 221 may be negative electrodes, and the second set of interdigital electrodes 222 may be positive electrodes.
In this way, when an electric signal is input to the first set of interdigital electrodes 221 and the second set of interdigital electrodes 222 in the interdigital bulk acoustic wave resonator to apply an electric field in the first direction a to the piezoelectric layer 21 (where the extending direction of the first set of interdigital electrodes 221 and the second set of interdigital electrodes 222 is the second direction b, the first direction a is parallel to the upper surface of the substrate 10, and the first direction a is perpendicular to the second direction b), so that the piezoelectric layer 21 generates an electric field in the first direction a throughout the thickness direction thereof (i.e., the direction perpendicular to the substrate 10), the first set of interdigital electrodes 221 and the second set of interdigital electrodes 222 can excite a surface acoustic wave propagating in the first direction a in the piezoelectric layer 21.
Alternatively, the material of the piezoelectric layer 21 may be any one or a combination of plural kinds of aluminum nitride, zinc oxide, lithium niobate, lithium tantalate, lead zirconate titanate-based piezoelectric ceramics, and barium sodium niobate. The material of the first set of interdigital electrodes 221 and the second set of interdigital electrodes 222 can be any one or a combination of more of molybdenum, platinum, gold, silver, aluminum, tungsten, titanium, ruthenium, copper, and chromium.
Referring to fig. 1 and 2, each of the first set 221 and the second set 222 includes a plurality of first electrodes 223. The first electrodes 223 of the first set of interdigital electrodes 221 and the first electrodes 223 of the second set of interdigital electrodes 222 are respectively metal electrode patterns crossing each other on the piezoelectric layer 21 like fingers of two hands.
In the present embodiment, the at least two first electrodes 223 are different in height on the piezoelectric layer 21, including various forms. For example, at least two first electrodes 223 of the plurality of first electrodes 223, which may be the first set of interdigitated electrodes 221, differ in height above the piezoelectric layer 21 (as shown in fig. 4); for another example, at least two first electrodes 223 of the plurality of first electrodes 223, which may be the second set of interdigitated electrodes 222, have different heights on the piezoelectric layer 21 (not shown); for another example, the height of at least one first electrode 223 of the plurality of first electrodes 223 of the first set of interdigital electrodes 221 on the piezoelectric layer 21 may be different from the height of at least one first electrode 223 of the plurality of first electrodes 223 of the second set of interdigital electrodes 222 on the piezoelectric layer 21 (as shown in fig. 3).
Here, it should be noted that the height of the first electrode 223 on the piezoelectric layer 21 is the extension length of the first electrode 223 from the surface of the piezoelectric layer 21 away from the substrate 10 to the direction away from the substrate 10.
In the present embodiment, by setting the heights of the at least two first electrodes 223 on the piezoelectric layer 21 to be different, a multi-mode acoustic wave can be generated. On the one hand, the number of filters in the radio frequency front end of the communication system can be reduced, and the requirements of high integration and miniaturization of radio frequency devices are further met. On the other hand, since the actual reflection interface of the acoustic wave in the interdigital bulk acoustic wave resonator is air, the thicknesses of the piezoelectric layer 21, the first set of interdigital electrodes 221, and the second set of interdigital electrodes 222 (i.e., the thickness of the piezoelectric layer 21, the height of the first set of interdigital electrodes 221, and the second set of interdigital electrodes 222 on the piezoelectric layer 21) all affect the resonance frequency. Therefore, the interdigital bulk acoustic wave resonator provided by the present application can excite the resonant peak of the bulk acoustic wave resonator thickness mode having different resonant frequencies through at least two first electrodes 223 having different heights, thereby implementing independent tuning of each mode of the multi-mode resonator.
It should be noted that, as shown in fig. 11, for the case of only the first set of interdigital electrodes 221 and the second set of interdigital electrodes 222, and when the plurality of first electrodes 223 have two different height values on the piezoelectric layer 21, the interdigital bulk acoustic wave resonator provided by the present application can have two resonance peaks with different resonance frequencies, and the tuning purpose can be achieved by adjusting the height of the first electrode 223 on the piezoelectric layer 21. Taking the example that the height value includes the first height value H1 and the second height value H2, the resonance frequency of the first resonance peak can be adjusted by independently adjusting the height of the first height value H1, keeping the second height value H2 unchanged. Wherein the resonance frequencies in the left five states shown in fig. 11 are achieved by setting the first height values H1 to different heights, and in fig. 11, the first height values H1 corresponding to the five resonance peaks in the left are 0.3 μm, 0.29 μm, 0.28 μm, 0.27 μm, and 0.26 μm, respectively, from left to right; the second height value H2 corresponding to the rightmost resonant peak (i.e., the second resonant peak) is 0.10 μm.
As shown in fig. 12, the resonant frequency of the second resonant peak (i.e., the left and right resonant peaks) can also be adjusted by independently adjusting the height value of the second height value H2. Wherein the resonance frequencies of the right five states shown in fig. 12 are achieved by setting the second height value H2 to different heights, and in fig. 12, the first height values H1 corresponding to the right five resonance peaks from left to right are 0.10 μm, 0.09 μm, 0.08 μm, 0.07 μm, and 0.06 μm, respectively; the leftmost harmonic peak (i.e. of the first harmonic peak) corresponds to a first height value H1 of 0.30 μm. Of course, in addition to such a separate adjustment of the resonant frequency of the first resonant peak or the second resonant peak, in other embodiments, the resonant frequencies of the first resonant peak and the second resonant peak may also be adjusted simultaneously. Since the tuning mode when the interdigital bulk acoustic wave resonator provided by the present application has three or more resonance peaks is the same as the tuning mode when the interdigital bulk acoustic wave resonator has two resonance peaks in principle, a person skilled in the art can simply deduce the tuning mode according to the two resonance peaks, and therefore, details are not described in this embodiment.
In summary, the interdigital bulk acoustic wave resonator provided by the present embodiment includes a substrate 10 and a piezoelectric stack 20 located on the substrate 10, where the piezoelectric stack 20 includes a piezoelectric layer 21 located on the substrate 10, and a first set of interdigital electrodes 221 and a second set of interdigital electrodes 222 located on the piezoelectric layer 21, and a cavity 11 is formed on a side of the substrate 10 close to the piezoelectric stack 20; wherein the first set 221 and the second set 222 of interdigital electrodes each include a plurality of first electrodes 223, and at least two first electrodes 223 have different heights on the piezoelectric layer 21. The first group of interdigital electrodes 221 with the plurality of first electrodes 223 and the second group of interdigital electrodes 222 with the plurality of first electrodes 223 are distributed on the surface of the piezoelectric layer 21, and the heights of at least two first electrodes 223 on the piezoelectric layer 21 are set to be different, so that multi-mode sound waves can be excited, an impedance curve obtained through the interdigital bulk acoustic wave resonator provided by the application has a plurality of main resonance peaks, and then mode independent tuning of the multi-mode resonator is achieved.
It should be noted that the interdigital bulk acoustic wave resonator provided by the present application can be applied to the construction of duplexers, dual-passband filters, and multi-passband filters. A filter built by utilizing the resonator has an adjustable dual-passband or multi-passband, and the market demand of modern wireless communication is met.
Illustratively, in one possible embodiment, referring to fig. 1, the plurality of first electrodes 223 have two different height values on the piezoelectric layer 21. For ease of understanding, it is assumed that the two different height values are a first height value and a second height value, respectively. The plurality of first electrodes 223 have two different height values on the piezoelectric layer 21, in other words, it can be considered that the height of any one first electrode 223 among all the first electrodes 223 is either the first height value or the second height value.
In the present embodiment, the plurality of first electrodes 223 having two different height values on the piezoelectric layer 21 also includes various cases. For example, it may be that the heights of all first electrodes 223 of the first set of interdigitated electrodes 221 are a first height value and the heights of all first electrodes 223 of the second set of interdigitated electrodes 222 are a second height value (as depicted in fig. 3); for another example, the heights of some of the first electrodes 223 in all the first electrodes 223 of the first group of interdigital electrodes 221 may be a first height value, and the heights of other portions of the first electrodes 223 may be a second height value. Among all the first electrodes 223 of the second group of interdigital electrodes 222, the heights of a part of the first electrodes 223 are a first height value, and the heights of another part of the first electrodes 223 are a second height value; for another example, all the first electrodes 223 of the first set of interdigital electrodes 221 include the first electrode 223 having a first height value and the first electrode 223 having a second height value, and all the first electrodes 223 of the second set of interdigital electrodes 222 have the first height value or the second height value; also for example, all the first electrodes 223 of the second set of interdigitated electrodes 222 may include a first electrode 223 having a first height value and a first electrode 223 having a second height value, and all the first electrodes 223 of the first set of interdigitated electrodes 221 may have a first height value or a second height value.
Illustratively, in another possible embodiment, the plurality of first electrodes 223 have three different height values on the piezoelectric layer 21.
Assume that the three different height values are a first height value, a second height value, and a third height value, respectively. The plurality of first electrodes 223 have three different height values on the piezoelectric layer 21, in other words, the height of any one first electrode 223 among all the first electrodes 223 can be considered to be any one of the first height value, the second height value, and the third height value. In the present embodiment, the same reason that the plurality of first electrodes 223 have two different height values on the piezoelectric layer 21 includes a plurality of cases when the plurality of first electrodes 223 have three different height values on the piezoelectric layer 21, and a person skilled in the art can easily derive the cases according to the description above that the plurality of first electrodes 223 have two different height values, so that the description of the present application is omitted.
It should be understood that the above-mentioned plurality of first electrodes 223 having two or three different height values on the piezoelectric layer 21 are only examples given herein and should not be construed as limiting the present application. For example, the plurality of first electrodes 223 may also have four or five different height values or the like on the piezoelectric layer 21, which is not enumerated in this application. Still further, the height values of all the first electrodes 223 on the piezoelectric layer 21 may also be different.
Referring to fig. 5 and 6, optionally, the interdigital bulk acoustic wave resonator further includes a third interdigital electrode 231 and a fourth interdigital electrode 232 located between the piezoelectric layer 21 and the substrate 10, each of the third interdigital electrode 231 and the fourth interdigital electrode 232 includes a plurality of second electrodes 233, and at least two of the second electrodes 233 have different heights on the piezoelectric layer 21.
Wherein, the third interdigital electrode 231 and the fourth interdigital electrode 232 are respectively located on a side of the piezoelectric layer 21 close to the substrate 10. Here, it should be noted that the height of the second electrode 233 above the piezoelectric layer 21 is the length of the second electrode 233 extending from the piezoelectric layer 21 toward the substrate 10.
It should be noted that the third interdigital electrode 231 and the fourth interdigital electrode 232 are arranged on the piezoelectric layer 21 in the same manner as the first group of interdigital electrodes 221 and the second group of interdigital electrodes 222 are arranged on the piezoelectric layer 21, that is, in the same manner as the arrangement of the first group of interdigital electrodes 221 and the second group of interdigital electrodes 222 on the piezoelectric layer 21 shown in fig. 2.
The at least two second electrodes 233 have different heights on the piezoelectric layer 21, and the included forms are the same as the above-mentioned forms included in the at least two first electrodes 223 having different heights on the piezoelectric layer 21, so the description of the present application is omitted.
As with the first electrode 223 on the voltage plane, in this embodiment, the plurality of second electrodes 233 may also exhibit two or three different heights on the piezoelectric layer 21. Specifically, the distribution pattern of the two or three different heights of the second electrode 233 is the same as that described above, and the description thereof is omitted.
Alternatively, the heights of the first electrode 223 and the second electrode 233 on the piezoelectric layer 21 are both between 1nm and 1 μm. The specific height values of the first electrode 223 and the second electrode 233 can be selected by those skilled in the art within the above range, and the present application is not limited thereto.
Referring to fig. 7, optionally, the piezoelectric stacks 20 include at least two piezoelectric stacks, and the heights of the first electrodes 223 of any one of the piezoelectric stacks 20 on the piezoelectric layer 21 are different from the heights of the first electrodes 223 of the other piezoelectric stacks 20 on the piezoelectric layer 21.
Since the specific structure of the piezoelectric stack 20 has been described in detail above, it will not be described again. In the present embodiment, the height of the plurality of first electrodes 223 of any one piezoelectric stack 20 on the piezoelectric layers 21 is different from the height of the plurality of first electrodes 223 of the remaining piezoelectric stacks 20 on the piezoelectric layers 21. For ease of understanding, the description will now be made. Assuming that the piezoelectric stack 20 includes two, as shown in fig. 7, if the first electrode 223 included in the first piezoelectric stack 20 (left piezoelectric stack 20) has a first height value and a second height value, and the first electrode 223 included in the second piezoelectric stack 20 (right piezoelectric stack 20) has a third height value and a fourth height value, neither the first height value nor the second height value is equal to the third height value nor the fourth height value.
Referring to fig. 8, fig. 8 is a graph comparing the impedance curve effect of the interdigital bulk acoustic wave resonator provided in the present embodiment with that of the conventional resonator. The dotted line is an impedance curve effect diagram of the resonator in the prior art, and the solid line is an impedance curve effect diagram of the interdigital bulk acoustic wave resonator provided by the present application. As can be seen from the figure, the interdigital bulk acoustic wave resonator provided by the application has a resonance peak at 2.7GHz and at 3.6GHz respectively, and the two peaks are 900MHz apart.
Also, when the piezoelectric stack 20 includes at least two, each piezoelectric stack 20 may include the third interdigital electrode 231 and the fourth interdigital electrode 232, or may not include the third interdigital electrode 231 and the fourth interdigital electrode 232. When the third interdigital electrode 231 and the fourth interdigital electrode 232 are included, reference may be made to the specific form of the third interdigital electrode 231 and the fourth interdigital electrode 232, and a description thereof will not be repeated here.
Referring to fig. 9, in another aspect of the present invention, a filter is further provided, where the filter includes a plurality of the interdigital bulk acoustic wave resonators, where M interdigital bulk acoustic wave resonators are connected in series to form a series branch, N interdigital bulk acoustic wave resonators are connected in parallel to the series branch, and M and N are positive integers. Since the specific structure and effective effect of the interdigital bulk acoustic wave resonator have been described in detail in the foregoing, detailed description thereof is omitted here.
For example, the filter may be as shown in fig. 9, comprising two series-connected interdigital bulk acoustic wave resonators and three parallel-connected interdigital bulk acoustic wave resonators. Of course, it should be understood that fig. 9 is merely an example, and that the specific manner of constructing the filter may be selected by one skilled in the art.
Referring to fig. 10, fig. 10 is a diagram illustrating the effect obtained by the filter shown in fig. 9. It can be seen that the filter built by using the interdigital bulk acoustic wave resonator has two pass bands at 2.4GHz to 2.58GHz and 3.56 to 3.9GHz respectively, and can meet the communication requirements of 2.4G, Wifi and 5G, n77 frequency bands respectively.
Alternatively, the heights of the plurality of first electrodes 223 of the interdigital bulk acoustic wave resonator on the series arm on the piezoelectric layer 21 and the heights of the plurality of first electrodes 223 of the interdigital bulk acoustic wave resonator connected in parallel to the series arm on the piezoelectric layer 21 are different.
For ease of understanding, the filter shown in fig. 9 is used for illustration. The two interdigital bulk acoustic wave resonators connected in series are assumed to be divided into a first resonator (assuming that the height values of the plurality of first electrodes 223 of the resonator on the piezoelectric layer 21 include a first height value and a second height value) and a second resonator (assuming that the height values of the plurality of first electrodes 223 of the resonator on the piezoelectric layer 21 include a third height value and a fourth height value), the three interdigital bulk acoustic wave resonators connected in parallel are assumed to be divided into a third resonator (assuming that the height values of the plurality of first electrodes 223 of the resonator on the piezoelectric layer 21 include a fifth height value and a sixth height value), a fourth resonator (assuming that the height values of the plurality of first electrodes 223 of the resonator on the piezoelectric layer 21 include a seventh height value and an eighth height value), and a fifth resonator (assuming that the height values of the plurality of first electrodes 223 of the resonator on the piezoelectric layer 21 include a ninth height value and a tenth height value). Each of the four height values (first, second, third and fourth height values) is not equal to any of the six height values (fifth, sixth, seventh, eighth, ninth and tenth height values).
The above description is only an alternative embodiment of the present invention and is not intended to limit the present invention, and various modifications and variations of the present invention may occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
Claims (10)
1. An interdigital bulk acoustic wave resonator is characterized by comprising a substrate and a piezoelectric lamination layer arranged on the substrate, wherein the piezoelectric lamination layer comprises a piezoelectric layer arranged on the substrate and a first group of interdigital electrodes and a second group of interdigital electrodes arranged on the piezoelectric layer, and a cavity is arranged on one side of the substrate, which is close to the piezoelectric lamination layer; wherein the first set of interdigitated electrodes and the second set of interdigitated electrodes each include a plurality of first electrodes, and at least two of the first electrodes differ in height on the piezoelectric layer.
2. The interdigital bulk acoustic wave resonator of claim 1, wherein a plurality of the first electrodes have two different height values on the piezoelectric layer.
3. The interdigital bulk acoustic wave resonator of claim 1, wherein a plurality of the first electrodes have three different height values on the piezoelectric layer.
4. The interdigital bulk acoustic wave resonator of claim 1, further comprising a third interdigital electrode and a fourth interdigital electrode positioned between the piezoelectric layer and the substrate, wherein each of the third interdigital electrode and the fourth interdigital electrode comprises a plurality of second electrodes, and wherein at least two of the second electrodes have different heights on the piezoelectric layer.
5. The interdigital bulk acoustic wave resonator of claim 4, wherein a plurality of the second electrodes exhibit two or three different heights above the piezoelectric layer.
6. The interdigital bulk acoustic wave resonator of claim 4, wherein the first and second electrodes each have a height on the piezoelectric layer of between 1nm and 1 μm.
7. The interdigital bulk acoustic wave resonator of claim 1, wherein the piezoelectric layer is made of one or more of aluminum nitride, zinc oxide, lithium niobate, lithium tantalate, lead zirconate titanate based piezoelectric ceramic, and barium sodium niobate.
8. The interdigital bulk acoustic wave resonator according to any one of claims 1 to 7, wherein the piezoelectric stacks comprise at least two, and the height of the first electrodes of any one of the piezoelectric stacks on the piezoelectric layer is different from the height of the first electrodes of the rest of the piezoelectric stacks on the piezoelectric layer.
9. A filter comprising a plurality of the interdigital bulk acoustic wave resonators according to any one of claims 1 to 8, wherein M of the interdigital bulk acoustic wave resonators are connected in series to form a series branch, N of the interdigital bulk acoustic wave resonators are connected in parallel to the series branch, and M and N are positive integers, respectively.
10. The filter according to claim 9, wherein the heights of the first electrodes of the interdigital bulk acoustic wave resonators in the series arm on the piezoelectric layer and the heights of the first electrodes of the interdigital bulk acoustic wave resonators connected in parallel to the series arm on the piezoelectric layer are different.
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| CN114584102A (en) * | 2022-03-11 | 2022-06-03 | 武汉敏声新技术有限公司 | Radio frequency resonator and filter |
| CN114793101A (en) * | 2022-04-24 | 2022-07-26 | 武汉敏声新技术有限公司 | Lamb wave resonator |
| CN114978089A (en) * | 2022-05-20 | 2022-08-30 | 武汉敏声新技术有限公司 | Resonator, preparation method thereof and filter |
| CN115857200A (en) * | 2023-02-27 | 2023-03-28 | 中科鑫通微电子技术(北京)有限公司 | Electro-optical modulator and manufacturing method thereof |
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