CN115857200A - Electro-optical modulator and manufacturing method thereof - Google Patents
Electro-optical modulator and manufacturing method thereof Download PDFInfo
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- CN115857200A CN115857200A CN202310167311.6A CN202310167311A CN115857200A CN 115857200 A CN115857200 A CN 115857200A CN 202310167311 A CN202310167311 A CN 202310167311A CN 115857200 A CN115857200 A CN 115857200A
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Abstract
The invention provides an electro-optical modulator and a manufacturing method thereof, belonging to the technical field of optical communication and comprising the following steps: a substrate; a lower cladding layer disposed over the substrate; a first electrode disposed over one side of the lower cladding layer; a waveguide disposed over the other side of the lower cladding layer, the waveguide having a height greater than a height of the first electrode; a second electrode disposed over a side of the waveguide distal from the first electrode; an upper cladding layer disposed over the first electrode, waveguide, and second electrode. The invention can make the transverse distance of the two electrodes closer under the condition that the electrode pair does not bring extra absorption loss to the waveguide, enhance the electric field in the waveguide and improve the modulation efficiency.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to an electro-optical modulator and a manufacturing method thereof.
Background
Lithium Niobate (LN) has extremely excellent electro-optic characteristics, and plays an important role in optical modulation, and is a preferred material for high-speed modulators in the field of communications. The transmission of light waves in an optical device requires that a refractive index difference exists between a waveguide core layer and a cladding layer, and the larger the refractive index difference is, the stronger the constraint capacity on a light field is. Early conventional LN devices were based on bulk LN substrates with waveguide structures fabricated by Ti ion diffusion or proton exchange, with regions after doping that produced a weak change in refractive index (less than 0.01). The waveguide structure in the form has small refractive index difference, weak optical field limiting capacity, large mode spot size (larger than 2 microns) in the waveguide and large bending radius (larger than 10 mm). Due to the large size of bulk LNs, high integration is difficult to achieve.
The problem of the oversize of the traditional bulk LN device is solved by a thin film Lithium Niobate On Insulator (LNOI). The LNOI keeps the great advantages of the traditional LN material in the aspects of electro-optic, acousto-optic and nonlinear effects and the like, and meanwhile, compared with the traditional bulk LN device, the LNOI has higher performance and smaller size, and can realize high-quality and high-integration electro-optic modulation. The LNOI adopts an etching mode to manufacture the waveguide structure, so that the light intensity limiting capability is stronger. When applied to a modulator, the electrodes can be very close to the waveguide, and the LNOI has higher modulation efficiency compared with a traditional bulk LN device.
Currently, the main design of the LNOI electro-optical modulator adopts the structure shown in fig. 1, from bottom to top, which is the substrate 1, the lower cladding 2, the waveguide 3, the first electrode 4, the second electrode 5 and the upper cladding 6. Wherein, first electrode 4 and second electrode 5 symmetric distribution are in waveguide 3 both sides, are located the coplanar, and the distance between two electrodes is generally 4 to 7um. The modulation efficiency Vpi.L of the electro-optical modulator with the push-pull working mode manufactured based on the structure is generally larger than 2 V.cm. To obtain higher modulation efficiency, the distance between the two electrodes needs to be reduced to obtain higher overlap integration of the electric and optical fields. However, when the distance between the electrodes is further decreased, the absorption loss of the electrode to the waveguide rapidly increases, as shown in fig. 2. In FIG. 2, for a single-mode waveguide structure with a LN total thickness of 600nm, a width of 1000nm, and an etching depth of 300nm, the horizontal distance Gap between the electrodes needs to be greater than 5.2 μm, and the absorption Loss of the metal electrode to the waveguide is reduced to 0.1dB/cm. Therefore, it is a technical challenge to further improve the modulation efficiency of the thin-film lithium niobate electro-optic modulator.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides an electro-optical modulator and a manufacturing method thereof.
The present invention provides an electro-optic modulator comprising:
a substrate;
a lower cladding layer disposed over the substrate;
a first electrode disposed over one side of the lower cladding layer;
a waveguide disposed over the other side of the lower cladding layer, the waveguide having a height greater than a height of the first electrode;
a second electrode disposed over a side of the waveguide distal from the first electrode;
an upper cladding layer disposed over the first electrode, waveguide, and second electrode.
According to an electro-optic modulator provided by the present invention, the upper cladding includes a first upper cladding and a second upper cladding;
the first upper cladding layer is disposed over the first electrode and the waveguide;
the second electrode is arranged on one side of the first upper cladding layer far away from the first electrode;
the second upper cladding layer is disposed over the second electrode.
According to the electro-optic modulator provided by the invention, the waveguide is an asymmetric ridge waveguide, a part of a flat plate on one side of the waveguide is etched, and a flat plate on one side of the waveguide, which is close to one side of the first electrode, is etched.
According to the electro-optical modulator provided by the invention, the waveguide is made of an X-cut thin-film lithium niobate material, and the thickness of the waveguide is 300nm to 800nm.
According to the electro-optic modulator provided by the invention, the horizontal distance between the first electrode and the second electrode is 2.5um to 4um.
According to the electro-optic modulator provided by the invention, the height difference between the first electrode and the waveguide is 0.5um to 2um, and the height difference between the second electrode and the waveguide is 0.5um to 2um.
According to the electro-optic modulator provided by the invention, the first electrode is used for applying voltage, and the second electrode is used for grounding;
or the first electrode is used for grounding, and the second electrode is used for applying voltage;
the thickness of the first electrode and the thickness of the second electrode are 0.6um to 1.5um.
According to the electro-optical modulator provided by the invention, the lower cladding is the silicon oxide buried oxide layer, and the thickness of the silicon oxide buried oxide layer is 2um to 5um.
According to the electro-optic modulator provided by the invention, the upper cladding is the silicon oxide layer, and the thickness of the silicon oxide layer is 800nm to 3um.
The invention also provides a method for manufacturing the electro-optical modulator, which comprises the following steps:
cleaning thin film lithium niobate, and depositing a first hard mask on the cleaned thin film lithium niobate, wherein the thin film lithium niobate comprises lithium niobate, a lower cladding and a substrate in sequence from top to bottom;
photoetching and etching the first hard mask, and etching the lithium niobate below the first hard mask to form a waveguide;
depositing a second hard mask on the waveguide, photoetching and etching one side of the second hard mask, etching the lithium niobate and the lower cladding below the one side, and corroding and removing the residual second hard mask;
manufacturing a first electrode on the etched lower cladding layer, and manufacturing a second electrode on the waveguide;
an upper cladding layer is deposited over the first electrode, waveguide, and second electrode.
According to the manufacturing method of the electro-optical modulator provided by the invention, the upper cladding comprises a first upper cladding and a second upper cladding;
the step of depositing an upper cladding layer over the first electrode, waveguide, and second electrode comprises:
depositing a first upper cladding layer over the first electrode and the waveguide;
fabricating a second electrode over a side of the first upper cladding layer remote from the first electrode;
depositing a second upper cladding layer over the second electrode.
According to the electro-optical modulator and the manufacturing method thereof, the two electrodes are not in the same plane in the longitudinal direction, the longitudinal offset exists relative to the center of the waveguide, the two electrodes are in a diagonal structure, under the condition that the electrode does not bring extra absorption loss to the waveguide, the transverse (Z direction) distance of the two electrodes can be closer, the electric field in the waveguide is enhanced, and the modulation efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of an electro-optic modulator provided in the prior art;
FIG. 2 is a graph of absorption loss of a metal electrode to a waveguide and an inter-electrode distance in an electro-optic modulator provided in the prior art;
FIG. 3 is one of the structural intents of an electro-optic modulator provided by the present invention;
FIG. 4 is a second schematic diagram of the electro-optic modulator structure provided in the present invention;
FIG. 5 is a graph of the relationship between lateral spacing of electrodes and absorption loss in an electro-optic modulator provided by the present invention;
FIG. 6 is a flow chart of a method for manufacturing an electro-optic modulator according to the present invention.
Reference numerals are as follows:
1: a substrate; 2: a lower cladding; 3: a waveguide; 4: a first electrode; 5: a second electrode; 6: an upper cladding layer; 61: a first upper cladding layer; 62: a second upper cladding layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An electro-optic modulator of the present invention is described below in conjunction with fig. 3, comprising:
a substrate 1;
optionally, the substrate 1 is silicon or quartz. The substrate 1 is used for bearing the stress of the chip and ensuring the transfer processing of the chip.
A lower cladding layer 2, the lower cladding layer 2 being disposed over the substrate 1;
a first electrode 4, the first electrode 4 being disposed on one side of the lower cladding layer 2;
a waveguide 3, the waveguide 3 being disposed on the other side of the lower cladding layer 2, the height of the waveguide 3 being greater than the height of the first electrode 4;
alternatively, the thickness of one side of the lower cladding layer 2 is made smaller than that of the other side by etching, so that the height of the first electrode disposed on one side of the lower cladding layer 2 is made smaller than that of the waveguide 3 disposed on the other side of the lower cladding layer 2.
The waveguide 3 is a symmetric ridge waveguide, an asymmetric ridge waveguide or a strip waveguide. The present embodiment does not limit the type of the waveguide 3.
In fig. 3, the waveguide 3 is an asymmetric ridge waveguide, and a portion of the slab, which is on the side of the waveguide close to the first electrode 4, is etched away.
The waveguide is made of crystal material with electro-optic effect, and the ridge waveguide structure has strong transverse limitation on an optical field. A ridge waveguide can be seen as a rectangular waveguide folded with an electromagnetic field pattern similar to that of the rectangular waveguide except that the field distribution is disturbed near the ridge due to edge effects.
Compared with a rectangular waveguide with the same size, the cut-off frequency of a main mode of the ridge waveguide is low; the single-mode working frequency band is wide and can reach a plurality of octaves; the equivalent impedance is low, so the coaxial line and the microstrip line with low impedance are easily matched.
The depth of the etch at one side of the lower cladding layer 2 is determined by the thickness of the first electrode 4 together with the longitudinal offset of the first electrode 4 with respect to the centre of the waveguide 3.
A second electrode 5, said second electrode 5 being arranged on a side of said waveguide 3 remote from said first electrode 4;
the first electrode 4 and the second electrode 5 form a microstrip line traveling wave electrode mechanism for transmitting a microwave signal for modulating an optical signal to be modulated.
The first electrode 4 and the second electrode 5 are not in the same plane in the longitudinal direction (X direction), are offset with respect to the center of the waveguide 3, and are diagonally configured with respect to the center of the waveguide 3.
An upper cladding layer 6, said upper cladding layer 6 being disposed over said first electrode 4, waveguide 3 and second electrode 5.
The lower cladding 2, the waveguide 3 and the upper cladding 6 constitute an optical waveguide for guiding the transmission of the optical signal to be modulated. The lower cladding layer 2 and the upper cladding layer 6 serve to longitudinally confine the optical field in the waveguide. After entering the optical waveguide, the optical signal to be modulated can only propagate in the waveguide 3, as it is limited by the upper cladding 6 and the lower cladding 2. The modulation efficiency of the push-pull electro-optic modulator based on the structure can reach 1V cm.
In the embodiment, the two electrodes are not on the same plane in the longitudinal direction, and have longitudinal offset relative to the center of the waveguide, so that the two electrodes are in a diagonal structure, and under the condition that no extra absorption loss is brought to the waveguide by the electrodes, the transverse (Z direction) distance of the two electrodes can be closer, the electric field in the waveguide can be enhanced, and the modulation efficiency can be improved.
On the basis of the above embodiment, as shown in fig. 4, the upper cladding layer 6 in the present embodiment includes a first upper cladding layer 61 and a second upper cladding layer 62;
the first upper cladding layer 61 is disposed over the first electrode 4 and the waveguide 3;
as shown in fig. 4, when the thickness of one side of the lower cladding layer 2 is smaller than that of the other side, and the first electrode 4 is located on one side of the lower cladding layer 2 with a gap from the other side, the first upper cladding layer 61 is also disposed at the gap between the first electrode 4 and the other side of the lower cladding layer 2.
The second electrode 5 is arranged on the side of the first upper cladding layer 61 far away from the first electrode 4;
the second upper cladding layer 62 is disposed over the second electrode 5.
The lower cladding 2, the waveguide 3, the first upper cladding 61 and the second upper cladding 62 constitute an optical waveguide for guiding the transmission of the optical signal to be modulated.
On the basis of the above embodiments, the waveguide in this embodiment is made of an X-cut thin-film lithium niobate material, and the thickness of the waveguide is 300nm to 800nm.
In the case of the waveguide made of X-cut thin-film lithium niobate material, the waveguide is along the Y crystal direction.
On the basis of the above embodiments, the horizontal (Z direction) distance between the first electrode and the second electrode in this embodiment is 2.5um to 4um.
On the basis of the above embodiment, in this embodiment, the height difference between the first electrode and the waveguide is 0.5um to 2um, and the height difference between the second electrode and the waveguide is 0.5um to 2um.
As shown in fig. 3, in the longitudinal direction (X direction), the first electrode 4 is located below the waveguide 3, and the second electrode is located above the waveguide 3. The distance of the two electrodes in the longitudinal direction with respect to the center of the waveguide 3 is between 0.5nm and 2um.
On the basis of the above embodiments, in this embodiment, the first electrode is used for applying a voltage, and the second electrode is used for grounding;
or the first electrode is used for grounding, and the second electrode is used for applying voltage;
one electrode of the two electrodes is used for grounding, and the other electrode is used for applying voltage.
The thickness of the first electrode and the thickness of the second electrode are 0.6um to 1.5um.
In the arena of the above embodiments, in this embodiment, the lower cladding layer is a silicon oxide buried oxide layer, and the thickness of the silicon oxide buried oxide layer is 2um to 5um.
On the basis of the above embodiments, in this embodiment, the upper cladding layer is a silicon oxide layer, and the thickness of the silicon oxide layer is 800nm to 3um.
For example, the fixed lithium niobate waveguide has a total thickness of 600nm, an etching depth of 300nm, a ridge width at the upper part of the waveguide of 1000nm, and a remaining width at the side of slab to be etched of 1 μm. The thickness of the buried oxide layer is 4 μm. The substrate is silicon, the thickness is 500 μm, and the electrode thickness is 1.2 μm. The absolute values of the distances of the fixed electrodes which are deviated from the center of the waveguide in the longitudinal direction are the same, and are 1 μm. Fig. 5 shows the relationship between the lateral spacing of the electrodes and the absorption loss. As seen from the results, when the pitch gap is 3.2 μm, the absorption Loss is 0.1dB/cm, which is negligible.
For an electro-optical modulator with a push-pull structure, the modulation efficiency V pi · L can be calculated by the following formula:
wherein the content of the first and second substances,
is the extraordinary light refractive index of lithium niobate->
Is the electro-optical coefficient of the lithium niobate along the Z crystal direction>
An electric field component in the Z-direction in the optical field representing the TE0 mode>
Represents the electric field distribution generated by the electrode in the Z crystal direction, <' > or>
Representing the wavelength of the optical signal to be modulated, V representing the applied voltage of the electrodes, S LN Representing the waveguide area. />
The larger the value of the superposition integral of the electro-optical light and the optical field, the smaller the value of the modulation efficiency V pi · L, and the higher the modulation efficiency.
The calculated distance was 3.2 μm corresponding to V pi · L =1.15V · cm. In contrast, under the same waveguide structure, when the electrode spacing of the conventional symmetric electrode structure is equal to 5.2 μm (the corresponding absorption loss is also 0.01 dB/cm), the corresponding modulation efficiency V pi · L =2.4V · cm, and it is known that the new structure can effectively improve the modulation efficiency without significant absorption loss.
The modulation efficiency improvement brought about by the electro-optic modulator provided by the present embodiment benefits primarily from the LN-enhanced electric field. Comparing the electro-optic modulator provided by this embodiment and the prior art, when the absorption loss is 0.01dB, the electrostatic field distribution along the Z crystal direction inside the lithium niobate waveguide can be seen, and under the same absorption loss, the novel diagonal electro-optic modulator provided by this embodiment can bring the significant enhancement of the electrostatic field inside the LN waveguide.
The following describes a method for manufacturing an electro-optic modulator provided by the present invention, and the method for manufacturing an electro-optic modulator described below and the electro-optic modulator described above can be referred to correspondingly.
As shown in fig. 6, the method for manufacturing an electro-optical modulator provided by the present invention includes:
and manufacturing the waveguide by using the thin-film lithium niobate as a substrate. The thin film lithium niobate is cleaned first, and a first hard mask is deposited on the cleaned lithium niobate in order to protect the lithium niobate during etching.
and when the formed waveguide is a ridge waveguide, etching the first hard mask at the corresponding position according to the slab width of the ridge waveguide, and continuously etching the lithium niobate with a certain depth downwards to form the symmetrical ridge waveguide. And removing the first hard mask above the ridge of the waveguide by wet etching. The present embodiment does not limit the type of waveguide.
to protect the lithium niobate during etching, a second hard mask is deposited over the symmetric ridge waveguide.
And etching the second hard mask at the corresponding position according to the width of the first electrode, and continuously etching the lithium niobate and the lower cladding with a certain depth downwards to complete the opening of the first electrode.
When the waveguide formed in step 602 is a symmetric ridge waveguide, an asymmetric ridge waveguide is formed by opening the first electrode.
The lower cladding is silica. The depth of the lower cladding layer is determined by the thickness of the first electrode and the longitudinal offset from the waveguide center.
And removing the second hard mask left on the waveguide by adopting wet etching.
and manufacturing the first electrode and the second electrode by adopting a stripping process. The first electrode is positioned below the waveguide, and the second electrode is positioned above the waveguide and has a diagonal structure relative to the center of the waveguide.
The upper cladding is silicon oxide. The lower cladding, the waveguide and the upper cladding form an optical waveguide for guiding the transmission of the optical signal to be modulated.
In the embodiment, the two electrodes are not on the same plane in the longitudinal direction, and have longitudinal offset relative to the center of the waveguide, so that the two electrodes are in a diagonal structure, and under the condition that no extra absorption loss is brought to the waveguide by the electrodes, the transverse (Z direction) distance of the two electrodes can be closer, the electric field in the waveguide can be enhanced, and the modulation efficiency can be improved.
On the basis of the above embodiment, the upper cladding layer in this embodiment includes a first upper cladding layer and a second upper cladding layer;
the step of depositing an upper cladding layer over the first electrode, waveguide, and second electrode comprises:
depositing a first upper cladding layer over the first electrode and the waveguide;
fabricating a second electrode over a side of the first upper cladding layer remote from the first electrode;
a second upper cladding layer is deposited over the second electrode and over the first upper cladding layer.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. An electro-optic modulator, comprising:
a substrate;
a lower cladding layer disposed over the substrate;
a first electrode disposed over one side of the lower cladding layer;
a waveguide disposed over the other side of the lower cladding, the waveguide having a height greater than that of the first electrode;
a second electrode disposed over a side of the waveguide distal from the first electrode;
an upper cladding layer disposed over the first electrode, waveguide, and second electrode.
2. The electro-optic modulator of claim 1, wherein the upper cladding layer comprises a first upper cladding layer and a second upper cladding layer;
the first upper cladding layer is disposed over the first electrode and the waveguide;
the second electrode is arranged on one side of the first upper cladding layer far away from the first electrode;
the second upper cladding layer is disposed over the second electrode.
3. The electro-optic modulator of claim 1, wherein the waveguide is an X-cut thin film lithium niobate material, and the waveguide has a thickness of 300nm to 800nm.
4. The electro-optic modulator of claim 1, wherein the horizontal spacing between the first electrode and the second electrode is 2.5um to 4um.
5. The electro-optic modulator of claim 1, wherein the height difference between the first electrode and the waveguide is 0.5um to 2um, and the height difference between the second electrode and the waveguide is 0.5um to 2um.
6. The electro-optic modulator of any of claims 1-5, wherein the first electrode is configured to apply a voltage and the second electrode is configured to ground;
or the first electrode is used for grounding, and the second electrode is used for applying voltage;
the thickness of the first electrode and the thickness of the second electrode are 0.6um to 1.5um.
7. The electro-optic modulator of any of claims 1-5, wherein the lower cladding layer is a buried oxide silicon oxide layer having a thickness of 2um to 5um.
8. The electro-optic modulator of any of claims 1-5, wherein the upper cladding layer is a silicon oxide layer having a thickness of 800nm to 3um.
9. A method of making an electro-optic modulator, comprising:
cleaning thin film lithium niobate, and depositing a first hard mask on the cleaned thin film lithium niobate, wherein the thin film lithium niobate comprises lithium niobate, a lower cladding and a substrate in sequence from top to bottom;
photoetching and etching the first hard mask, and etching the lithium niobate below the first hard mask to form a waveguide;
depositing a second hard mask on the waveguide, photoetching and etching one side of the second hard mask, etching the lithium niobate and the lower cladding below the one side, and corroding and removing the residual second hard mask;
manufacturing a first electrode on the etched lower cladding layer, and manufacturing a second electrode on the waveguide;
an upper cladding layer is deposited over the first electrode, waveguide, and second electrode.
10. The method of claim 9, wherein the upper cladding layer comprises a first upper cladding layer and a second upper cladding layer;
the step of depositing an upper cladding layer over the first electrode, waveguide, and second electrode comprises:
depositing a first upper cladding layer over the first electrode and the waveguide;
fabricating a second electrode over a side of the first upper cladding layer away from the first electrode;
depositing a second upper cladding layer over the second electrode.
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| CN107741656A (en) * | 2017-09-21 | 2018-02-27 | 北京大学 | A kind of electro-optic intensity modulator of the polarization insensitive based on transparent conductive oxide |
| CN211698498U (en) * | 2020-03-13 | 2020-10-16 | 天津领芯科技发展有限公司 | High-speed optical modulator |
| CN113810014A (en) * | 2021-09-23 | 2021-12-17 | 武汉敏声新技术有限公司 | Interdigital bulk acoustic wave resonator and filter |
| CN114609805A (en) * | 2020-12-09 | 2022-06-10 | 上海交通大学 | Lithium niobate electro-optical modulator and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20030041555A (en) * | 2001-11-20 | 2003-05-27 | 엘지전자 주식회사 | Thermo-Optical Switch |
| CN104583856A (en) * | 2013-08-23 | 2015-04-29 | 华为技术有限公司 | Optical modulator and optical signal transmission apparatus |
| CN107741656A (en) * | 2017-09-21 | 2018-02-27 | 北京大学 | A kind of electro-optic intensity modulator of the polarization insensitive based on transparent conductive oxide |
| CN211698498U (en) * | 2020-03-13 | 2020-10-16 | 天津领芯科技发展有限公司 | High-speed optical modulator |
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