CN106575957A - Integrated circuit configured with crystal acoustic resonator device - Google Patents
Integrated circuit configured with crystal acoustic resonator device Download PDFInfo
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- CN106575957A CN106575957A CN201580042442.5A CN201580042442A CN106575957A CN 106575957 A CN106575957 A CN 106575957A CN 201580042442 A CN201580042442 A CN 201580042442A CN 106575957 A CN106575957 A CN 106575957A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 238000001228 spectrum Methods 0.000 description 3
- 229910015844 BCl3 Inorganic materials 0.000 description 2
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- 229910052786 argon Inorganic materials 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0095—Balance-unbalance or balance-balance networks using bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
Abstract
A configurable single crystal acoustic resonator (SCAR) device integrated circuit is provided. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/ cm2.
Description
Cross-Reference to Related Applications
This application claims the U. S. application No.14/298,057 submitted on June 6th, 2014 and passing on June 6th, 2014
The priority of the U. S. application No.14/298,100 of friendship.
Background technology
This patent disclosure relates generally to electronic equipment.More specifically, the present invention provides the technology relevant with monocrystalline acoustic resonator.Only
By way of example, the present invention is applied to resonator device, and especially, the resonator device is used for communication equipment, movement
Equipment, computing device.
Successfully deployment mobile telecommunication apparatus all over the world.The mobile device more than 1,000,000,000 has been manufactured in 1 year
(include cellular handset and smart mobile phone), and unit quantity continues to increase year by year.Due to the climbing of the 4G/LTE in about 2012
The surge of volume production and mobile data services, the growth in the content driven smart mobile phone field of data rich-be expected in future
Annual 2B is reached in several years.New standard is coexisted and for the serious hope of higher data rate demand drives with the standard left
RF complexity in smart mobile phone.Unfortunately, exist in traditional RF technologies and limit, this is problematic and may be in future
Cause defect.
As seen from the above, it would be highly desirable to for improving the technology of electronic equipment.
The content of the invention
According to the present invention, there is provided relate in general to the technology of electronic equipment.More specifically, the present invention relates to monocrystalline sound is humorous
Shake the technology of device.Only by way of example, the present invention is applied to resonator device, and especially, the resonator device is used for
Communication equipment, mobile device, computing device.
In this example, the present invention provides the monocrystalline capacitor dielectric material being configured on substrate by limited area epitaxy
Material.The material is connected between a pair of electrodes, in this example, configures this pair of electrode from the upside of substrate member and dorsal part.Showing
In example, using metal-organic chemical vapor deposition equipment, molecular beam epitaxy, ald, pulsed laser deposition, chemical vapor deposition
Product, or wafer bonding technique providing monocrystalline capacitors dielectrics.In this example, limited area epitaxy is stripped
(lifted-off) substrate and it is transferred to another substrate.In this example, the material is characterized in that less than 1E+11 defects/flat
Square centimetre of defect concentration.In this example, monocrystalline capacitor material is selected from AlN, AlGaN, InN, BN or other III-nitrides
At least one of.In this example, monocrystalline capacitor material is in the monocrystalline oxide ZnO or MgO for including high-k dielectrics
At least one.
In this example, there is provided a kind of monocrystalline sound electronic equipment.The equipment has substrate, and the substrate has surface region.Should
Equipment has the first electrode material and monocrystalline capacitors dielectrics for the part for being connected to substrate, and the monocrystalline capacitor is situated between
Electric material has the thickness and the expose portion of coat surface areas more than 0.4 micron and is connected to first electrode material.Showing
In example, the monocrystalline capacitors dielectrics are characterized in that less than 1012Defect/cm2Dislocation density.Second electrode material covers single
Brilliant capacitors dielectrics.
In this example, the present invention provides a kind of configurable monocrystalline acoustic resonator (SCAR) integration of equipments circuit.The circuit
Multiple SCAR equipment including label from 1 to N, wherein, N is 2 and the integer more than 2.Each SCAR equipment have be formed as
Cover the certain thickness mono-crystalline piezoelectric materials of the surface region of substrate member.The mono-crystalline piezoelectric materials are characterized in that less than 1012
Defect/cm2Dislocation density.
One or more benefits beyond prior art are realized using the present invention.Especially, the present invention can realize being used for
The cost-effective resonator device of communications applications.In a specific embodiment, this equipment can adopt relatively easy and cost
Effective manner is manufacturing.According to embodiment, this apparatus and method can be according to one of ordinary skill in the art using biography
Commons material and/or method are manufacturing.Using the material comprising gallium and nitrogen, the material is monocrystal to this equipment.According to embodiment,
One or more of these benefits can be realized.Of course, it is possible to there is other modifications, modification and alternative.
May be referred to the further part and accompanying drawing of description to realize the further reason of property and advantage to the present invention
Solution.
Description of the drawings
In order to the present invention is more fully understood, referring to the drawings.It should be understood that these accompanying drawings are not considered as the scope of the present invention
Restriction, the best mould of the present invention for presently described embodiment being more fully described by using accompanying drawing and being currently understood that
Formula, in accompanying drawing：
Fig. 1 is the simplification figure of the surface single crystal acoustic resonator for illustrating example of the invention.
Fig. 2 is the simplification figure of the body monocrystalline acoustic resonator for illustrating example of the invention.
Fig. 3 is the simplification figure of the feature of the body monocrystalline acoustic resonator for illustrating example of the invention.
Fig. 4 is the simplification figure of the piezoelectric structure for illustrating example of the invention.
Fig. 5 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.
Fig. 6 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.
Fig. 7 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.
Fig. 8 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.
Fig. 9 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.
Figure 10 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.
Figure 11 is the simplification figure of the substrate member of the example according to the present invention.
Figure 12 is the simplification figure of the substrate member of the example according to the present invention.
Figure 13 is to illustrate that this example of example of the invention compares the simplified table of the feature of conventional filter.
Figure 14 to Figure 22 illustrates the manufacture method for the monocrystalline acoustic resonator equipment in example of the invention.
Figure 23 illustrate the present invention example in monocrystalline acoustic resonator equipment circuit diagram.
Figure 24 to Figure 32 illustrates the manufacture method for the monocrystalline acoustic resonator equipment in example of the invention.
Figure 33 illustrate the present invention example in monocrystalline acoustic resonator equipment circuit diagram.
The reflector structure that configures on the monocrystalline acoustic resonator equipment that Figure 34 and Figure 35 illustrate in the example of the present invention.
Figure 36 illustrates the circuit diagram with the reflector structure of the monocrystalline acoustic resonator integration of equipments in above-mentioned figure.
The reflector structure that configures on the monocrystalline acoustic resonator equipment that Figure 37 and Figure 38 illustrate in the example of the present invention.
Figure 39 illustrates the circuit diagram with the reflector structure of the monocrystalline acoustic resonator integration of equipments in above-mentioned figure.
Figure 40 illustrate the present invention example in monocrystalline acoustic resonator equipment base surface area and the simplification figure of top surface areas.
Figure 41 and Figure 44 illustrate that the monocrystalline acoustic resonator in the wave filter ladder network being configured in the example of the present invention sets
Standby simplified example.
Figure 45 to Figure 52 illustrates the two-part monocrystalline acoustic resonator equipment and three component type lists of example of the invention
The simplified example of brilliant acoustic resonator equipment.
Specific embodiment
According to the present invention, there is provided relate in general to the technology of electronic equipment.More specifically, the present invention relates to monocrystalline sound is humorous
Shake the technology of device.Only by way of example, the present invention is applied to resonator device, and especially, the resonator device is used for
Communication equipment, mobile device, computing device.
As additional background, compared to conventional art, estimate that the quantity of the frequency band supported by smart mobile phone is increased with 7 times.
Therefore, more multiband means the differentiator that high selectivity filtering performance is increasingly becoming in the RF front ends of smart mobile phone.Unfortunately,
Conventional art has strict restriction.
That is, traditional wave filter technology is based on amorphous material, and its mechanical-electric coupling poor efficiency is (for not lead-containing materials only
For 7.5%), this causes the transmission power of nearly half to be dissipated in highly selective filter.In addition, monocrystalline acoustic wave device is expected to reality
The improvement that existing neighboring trace suppresses.Due to there are 20 (20) or more multi-filter and these wave filter quilts in current smart mobile phone
It is inserted between power amplifier and antenna scheme, then with the size by reducing heat dissipation, power amplifier while carrying
The signal quality of high smart mobile phone receptor is improving RF front ends and make the maximized chance of the spectrum efficiency in system.
Using monocrystalline acoustic wave device (hereinafter referred to as " SAW " equipment) and filter scheme, it is possible to achieve in following benefit
One or more：(1) major diameter Silicon Wafer (up to 200mm) is expected to the profitable high-performance scheme of cost of implementation, and (2) are using new
The strain piezoelectric of design, mechanical-electric coupling efficiency are expected to more than three times, and (3) filter insertion loss is expected to reduce 1dB, so as to
Battery can be extended, and heat management is improved using less RF encapsulation and improve signal quality and Consumer's Experience.This
A little benefits and other benefits can pass through the equipment as run through this specification and the present invention for further providing in further detail below
Realize with method.
Fig. 1 is the simplification figure of the surface single crystal acoustic resonator for illustrating example of the invention.The figure is merely illustrative, and which is not
Should unduly limit the scope of the claims.Show the crystal piezoelectric 120 of the covering substrate 110 with the present invention
Surface single crystal acoustic resonator equipment 100.As illustrated, sound wave is along being arranged essentially parallel to the horizontal of a pair of electrical ports 140
Direction travels to second space region from the first area of space, and this forms interdigital transducer configuration 130, and the interdigital transducer is configured
130 have many metal lines 131 being spatially arranged between this pair of electrical port 140.In this example, the electrical port in left side
Signal input can be specified for, and the electrical port on right side is specified for signal output.In this example, a pair of electrodes area
Domain is configured and is routed near the plane parallel to the contact region for being attached to second electrode material.
In SAW device example, surface acoustic wave is being close to generation resonance row in the narrow-band of 880MHz to 915MHz frequency bands
For the narrow-band is the specified passband of the intelligent movable mobile phone with LTE functions for Europe, the Middle East and Africa (EMEA).
Depending on the region of the operation of communication equipment, there may be modification.For example, in the emission band in North America, resonator can be with
It is designed such that resonance behavior in 777MHz to 787MHz frequency passbands are close to.Other the transmitting frequencies found in other regions
Band can be higher in frequency, the Asia emission band such as in 2570MHz to 2620MHz passbands.In addition, provided herein
Example is used for multiple emission bands.In a similar fashion, the passband in the receiver-side of radio front-end is also required to similar holding
Row resonance filter.Of course, it is possible to there is modification, modification and alternative.
The further feature of surface acoustic wave device includes the fundamental frequency of SAW device, and the fundamental frequency is by surface spread speed (by pin
The crystal mass of the piezoelectric selected to resonator is determining) divided by the wavelength (finger piece in interdigital layout in by Fig. 1
To determine) determining.The spread speed (also referred to as SAW speed) of the measurement for being close to 5800m/s in GaN is recorded, while
Similar value is expected to be used for AlN.Therefore, the higher SAW speed of this kind of group III-nitride resonator is processed for
Determine the higher frequency signal of device geometries.
Expect the resonator by made by group III-nitride, because such material (utilizes its high critical electricity with high power
), high temperature (from the low intrinsic carrier concentration of its big band gap) and high frequency (high saturated electrons speed) operate.Lift several next
Say, using this kind of high-power equipment (being more than 10 watts) in radio infrastructure and business and military radar system.In addition,
The stability of this kind equipment, biological treatability and reliability are most important for field deployment.
The further of this specification and each element for more specifically finding below to provide in this equipment can be provided
Details.
Fig. 2 is the simplification figure of the body monocrystalline acoustic resonator for illustrating example of the invention.The figure is merely illustrative, and which should not
When unduly limiting the scope of the claims.Show that the body monocrystalline acoustic resonator with crystal piezoelectric of the present invention sets
Standby 200.As illustrated, sound wave between upper electrode material 231 and substrate member 210 along vertical direction from the first space region
Domain travels to second space region.As illustrated, crystal piezoelectric 220 is configured in upper electrode material 231 with bottom electricity
Between pole material 232.Upper electrode material 231 is configured in below multiple optional reflecting layer, and these reflecting layer are formed
To cover upper electrode 231 to form sound reflector area 240.
In bulk acoustic wave (hereinafter referred to as " BAW ") device examples, sound wave is being close to the narrow of 3600MHz to 3800MHz frequency bands
Resonance behavior is produced on frequency band, the narrow-band is the specified passband for the intelligent movable mobile phone with LTE functions.Depending on logical
The region of the operation of letter equipment, there may be modification.For example, in the emission band in North America, resonator can be designed so that
Resonance behavior in 2000MHz to 2020MHz frequency passbands are close to.Other emission bands are found in other regions, such as
The emission band in the Asia in 2500MHz to 2570MHz passbands.In addition, example is used for multiple emission bands provided herein.
In a similar fashion, the passband in the receiver-side of radio front-end is also required to similar execution resonance filter.Of course, it is possible to
There is modification, modification and alternative.
The further feature of monocrystalline BAW equipment includes the electromechanical acoustical coupling in equipment, and which (receives monocrystalline piezoelectric layer with piezoelectric constant
Design and strain affect) it is proportional divided by SVEL (by the scattering in piezoelectric and reflections affect).Have been observed that
The SVEL more than 5300m/s in GaN.Therefore, the loud wave velocity of this kind of group III-nitride is enabled at resonator
Manage for giving the higher frequency signal of device geometries.
Similar to SAW device, the resonator by made by group III-nitride is desirable, because these materials are in high power
(utilizing its high critical electric field), high temperature (from the low intrinsic carrier concentration of its big band gap) and high frequency (high saturated electrons speed)
Operation.For act is several, (it is more than using this kind of high-power equipment in radio infrastructure and business and military radar system
10 watts).In addition, the stability of this kind equipment, biological treatability and reliability are most important for field deployment.
The further of this specification and each material for more specifically finding below to provide in this equipment can be provided
Details.
In this example, the equipment has substrate, and the substrate has surface region.In this example, substrate can be certain thick
The material of degree, complex or other structures.In this example, substrate can selected from dielectric material, conductive material, semi-conducting material,
Or any combinations of these materials.In this example, substrate can also be polymeric member etc..In preferred exemplary, substrate is selected from
The material provided from silicon, GaAs, aluminium oxide etc. and combinations thereof.
In this example, substrate is silicon.Substrate has surface region, and the surface region can be that offset configuration or cut is matched somebody with somebody
Put.In this example, angle of eccentricity of the surface region with scope from 0.5 degree to 1.0 degree is configuring.In this example, substrate has<
111>It is orientated and have high resistivity (to be more than 103ohm-cm).Of course, it is possible to there is other modifications, modification and alternative.
In this example, the first electrode material and thickness that equipment has the part for being connected to substrate is more than 0.4 micron
Monocrystalline capacitors dielectrics.In this example, monocrystalline capacitors dielectrics have suitable dislocation density.The dislocation density
Less than 1012Defect/cm2And it is more than 104Defect/cm2, and its modification.The equipment has and covers the of monocrystalline capacitor dielectric material
Two electrode materials.This specification can be run through and more specifically find the further detail below of each of these materials below.
In this example, monocrystalline capacitor material is the suitable single crystal materials with desired electric property.In this example, it is single
Brilliant capacitor material usually the material comprising gallium and nitrogen, such as AlN, AlGaN or GaN, including InN, InGaN, BN or other
Group III-nitride.In this example, monocrystalline capacitor material selected from include high-k dielectrics monocrystalline oxide (ZnO, MgO or
The alloy of MgZnGaInO) at least one monocrystalline oxide.In this example, high K is characterized in that less than 1012Defect/cm2And
More than 104Defect/cm2Defect concentration.Of course, it is possible to there is other modifications, modification and alternative.
In this example, monocrystalline capacitor dielectric material be characterized in that at least 50 microns × 50 microns surface region and
Modification.In this example, the surface region can be 200 microns × 200 μm or up to 1000 μm of 1000 μ ms.Of course, it is possible to deposit
In modification, modification and alternative.
In this example, monocrystalline capacitors dielectrics configure to compensate substrate with the first strain regime.That is, monocrystal material
It is the compression strain state relevant with the backing material for covering or elongation strain state.In this example, GaN is when being deposited on silicon
Strain regime be elongation strain, and AlN layers are the compression strain relative to silicon substrate.
In preferred exemplary, monocrystalline capacitors dielectrics are deposited as the expose portion for covering substrate.In this example, it is single
Brilliant capacitor dielectric is and the unmatched lattice of the crystal structure of substrate, and can be using compression strain piezoelectricity nucleating layer
The strain that (such as AlN or SiN) is compensated.
In this example, first electrode material of the equipment with the dorsal part configuration by substrate.In this example, the first electrode
Material by substrate dorsal part configuring.The configuration includes the through-hole structure being configured in the thickness of substrate.
In this example, electrode material can be made up of suitable one or more material.In this example, first electrode material
Refractory metal or other noble metals are selected from each of second electrode material.In this example, first electrode material and second
Each of electrode material is selected from one of tantalum, molybdenum, platinum, titanium, gold, aluminum, tungsten or platinum, its combination etc..
In this example, first electrode material and monocrystalline capacitors dielectrics include there is no oxidiferous material
The first interface zone.In this example, first electrode material and monocrystalline capacitors dielectrics include there is no containing oxidation
The second contact surface region of the material of thing.In this example, the equipment can include be connected to first electrode material the first contact and
It is connected to the second contact of second electrode material so that each of the first contact and the second contact are matched somebody with somebody with co-planar arrangement
Put.
In this example, the equipment has the reflector region for being configured at first electrode material.In this example, the equipment also has
There is the reflector region for being configured at second electrode material.Reflector region is by alternate Low ESR reflector layer (such as electrolyte)
Make with high impedance reflector layer (such as metal), wherein per layer of thickness is with a length of target of quarter-wave, but can be to deposit
In modification.
In this example, the equipment has the nucleation material being arranged between monocrystalline capacitors dielectrics and first electrode material
Material.The nucleation material is usually AlN or SiN.
In this example, the equipment has to be arranged on and adds a cover material between monocrystalline capacitors dielectrics and second electrode material
Material.In this example, the capping material is GaN.
In this example, monocrystalline capacitors dielectrics preferably have other properties.That is, monocrystalline capacitors dielectrics
It is characterized in that the FWHM less than 1 degree.
In this example, monocrystalline capacitor dielectric is configured to propagate longitudinal direction with the velocity of sound of 5000m/second and the bigger velocity of sound
Signal.In the other embodiment of strain is designed with, signal can be higher than 6000m/s and be less than 12000m/s.Of course, it is possible to
There is modification, modification and alternative.
When being tested using two-port network analhyzer, equipment also has desired resonance behavior.The resonance behavior
Two resonant frequencies (so-called serial and concurrent) are characterized in that, so as to a resonant frequency represents infinitely-great electrical impedance, and
Another resonant frequency is presented as zero impedance.Between this quefrency, equipment inductively operates.In this example, the equipment has
Have from s parameters derived from two-port analysis, the s parameters can be converted into impedance.From s11 parameters, can be with the reality of extraction equipment
Portion's impedance and imaginary impedance.From s21 parameters, the transmission gain of resonator can be calculated.Using along known piezoelectric layer thickness
Parallel resonance frequency, the velocity of sound for the equipment can be calculated.
Fig. 3 is the simplification figure of the feature of the body monocrystalline acoustic resonator for illustrating example of the invention.The figure is merely illustrative,
Which should not unduly limit the scope of the claims herein.As illustrated, Figure 30 0 shows that application is the band logical for RF signals
The present invention of wave filter.Specific frequency range is allowed through the wave filter, as by the RF spectrum under shown in from wavelength
Shown in the black surround of rise.The frame is matched with the signal of the wave filter in allowing by illustrating above.Monocrystalline equipment is due to relatively low
Filter loss and can provide relative to the more preferable tonequality of BAW equipment and mitigate the specification requirement to power amplifier.These
Can cause for utilizing the benefit of the equipment of the present invention, the battery for such as extending, high-efficiency frequency spectrum are used, continual caller experience
Deng.
Fig. 4 is the simplification figure of the piezoelectric structure for illustrating example of the invention.The figure is merely illustrative, and which should not be uncomfortable
The local scope for limiting claim.In this example, structure 400 is configured in the bulk substrate component 410 including surface region
On.In this example, mono-crystalline piezoelectric materials extension 420 is formed using growth technique.The growth technique can include chemical vapor deposition
Other technologies on the surface of product, molecular beam epitaxial growth or covering substrate.In this example, mono-crystalline piezoelectric materials can include single
Brilliant gallium nitride (GaN) material, monocrystalline Al (x) Ga (1-x) N (wherein 0<x<1.0 (x=" Al molar fractions ")) material, monocrystalline nitrogen
Change aluminum (AlN) material or material mentioned above any combinations to each other.It is of course also possible to exist modification, alternative and
Modification.This specification can be run through and the further detail below of substrate is more specifically found below.
Fig. 5 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.The figure is merely illustrative, and which should not
Unduly limit the scope of the claims.In this example, structure 500 is configured to cover nucleated areas 530, the nucleated areas
530 surfaces for covering substrate 510.In this example, nucleated areas 530 are one layer or can be multiple layers.Nucleated areas are using pressure
Electric material is made such that it is able to acoustical coupling is carried out in resonator circuit.In this example, nucleated areas are thin piezoelectricity nucleation
Layer, the scope of its thickness can be from about 0nm to 100nm, the mono-crystalline piezoelectric materials on the surface that can be used for initiation covering substrate
520 growth.In this example, nucleated areas can be made using thin SiN or AlN materials, but can include modification.In example
In, from 0.2 μm to 20 μm, but can there is modification in the scope of the thickness of mono-crystalline piezoelectric materials.In this example, with big
The piezoelectric of about 2 μm of thickness is generally used for 2GHz acoustic resonator equipment.Can be through this specification and more specific below
Ground finds the further detail below of substrate.
Fig. 6 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.The figure is merely illustrative, and which should not
Unduly limit the scope of the claims.In this example, carry out configuration structure 600 using GaN piezoelectrics 620.In this example,
Regional is monocrystalline or substantially monocrystalline.In this example, using thin AlN or SiN piezoelectricity nucleated areas 630 arranging the knot
Structure, the nucleated areas 630 can be one or more layers.In this example, region is (UID) that adulterate unintentionally and to be set to strain
GaN in the surface region of compensation substrate 610.In this example, nucleated areas have covered GaN single crystal piezoelectric regions and (have
Nd-Na：1014/cm3With 1018/cm3Between), and thickness range is between 1.0 μm and 10 μm, but there may be modification.Can
With the further detail below for running through this specification and more specifically finding substrate below.
Fig. 7 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.The figure is merely illustrative, and which should not
Unduly limit the scope of the claims.As illustrated, carrying out configuration structure 700 using AlN piezoelectrics 720.Regional
For monocrystalline or substantially monocrystalline.In this example, using thin AlN or SiN piezoelectricity nucleated areas 730 arranging the structure, the nucleation
Region 730 can be one or more layers.In this example, region is (UID) that adulterate unintentionally and to be set with strain compensation substrate
AlN in 710 surface region.In this example, nucleated areas have covered AlN monocrystalline piezoelectrics region and (have Nd-Na：
1014/cm3With 1018/cm3Between), and thickness range is between 1.0 μm and 10 μm, but there may be modification.Can be through this
Description and below more specifically find substrate further detail below.
Fig. 8 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.The figure is merely illustrative, and which should not
Unduly limit the scope of the claims.As illustrated, carrying out configuration structure 800 using AlGaN piezoelectrics 820.Each area
Domain is monocrystalline or substantially monocrystalline.In this example, using thin AlN or SiN piezoelectricity nucleated areas 830 arranging the structure, this into
Core region 830 can be one or more layers.In this example, region is (UID) that adulterate unintentionally and to be set and served as a contrast with strain compensation
AlN in the surface region at bottom 810.In this example, in other features, AlGaN monocrystalline piezoelectric layers, wherein, Al (x) Ga (1-
X) N has Al mole of composition 0<x<1.0(Nd-Na：1014/cm3With 1018/cm3Between), thickness range 1 μm and 10 μm it
Between.This specification can be run through and the further detail below of substrate is more specifically found below.
Fig. 9 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.The figure is merely illustrative, and which should not
Unduly limit the scope of the claims.Carry out configuration structure 900 using AlN/AlGaN piezoelectrics 920.Regional is single
Crystalline substance or substantially monocrystalline.In this example, using thin AlN or SiN piezoelectricity nucleated areas 930 arranging the structure, the nucleated areas
930 can be one or more layers.In this example, region is (UID) that adulterate unintentionally and to be set with strain compensation substrate 910
AlN in surface region.In this example, one or more alternating stacks are formed to cover nucleated areas.In this example, should
Duplexer includes AlGaN/AlN monocrystalline piezoelectric layers, wherein, Al (x) Ga (1-x) N has Al mole of composition 0<x<1.0；(Nd-Na：
1014/cm3With 1018/cm3Between), thickness range is between 1.0 μm and 10 μm；AlN(1nm<Thickness<30nm) for straining
Compensation lattice and the thicker AlGaN piezoelectric layers of permission.In this example, last monocrystalline piezoelectric layer is AlGaN.In this example, especially
Which, total laminate thickness of the structure is at least 1 μm and is less than 10 μm.This specification can be run through and more specifically sent out below
The further detail below of existing substrate.
Figure 10 is the simplification figure of the piezoelectric structure for illustrating alternative example of the invention.The figure is merely illustrative, and which should not
When unduly limiting the scope of the claims.As illustrated, structure 1000 has optional one or more GaN piezoelectricity cap rocks
1040.In this example, especially, cap rock 1040 or region can be configured in arbitrary aforementioned exemplary.In this example, cover area can
With including at least one or more benefit.This kind of benefit especially include it is improved from upside metal (electrode 1) in piezoelectric
Electro sonic Coupling, the surface oxidation for reducing, improved manufacture etc..In this example, GaN cover areas have scope in 1nm to 10nm
Between thickness and have Nd-Na：1014/cm3With 1018/cm3Between, although there may be modification.This explanation can be run through
Book and below more specifically find substrate further detail below.
Figure 11 is the simplification figure of the substrate member of the example according to the present invention.The figure is merely illustrative, and which should not be inappropriate
Ground limits the scope of claim.In this example, monocrystalline acoustic resonator material 1120 can be that growth (is used on substrate 1110
CVD or MBE technologies) mono-crystalline piezoelectric materials extension.Substrate 1110 can be bulk substrate, complex or other components.It is block
Substrate 1110 is preferably gallium nitride (GaN), carborundum (SiC), silicon (Si), sapphire (Al2O3), aluminium nitride (AlN), its group
Close etc..
Figure 12 is the simplification figure of the substrate member of the example according to the present invention.The figure is merely illustrative, and which should not be inappropriate
Ground limits the scope of claim.In this example, monocrystalline acoustic resonator material 1220 can be that growth (is used on substrate 1210
CVD or MBE technologies) mono-crystalline piezoelectric materials extension.Substrate 1210 can be bulk substrate, complex or other components.It is block
Substrate 1210 is preferably gallium nitride (GaN), carborundum (SiC), silicon (Si), sapphire (Al2O3), aluminium nitride (AlN), its group
Close etc..In this example, the surface region of substrate is exposed and exposed crystalline material.
Figure 13 is to illustrate that this example of example of the invention compares the simplified table of the feature of conventional filter.As schemed
Show, the specification of " this example " and " tradition " embodiment is shown relative to the standard under " filter scheme ".
In this example, GaN, SiC and Al2O3Be oriented to c-axis so as to improve or or even maximize piezoelectric in polarization
.In this example, for it is same or like the reasons why, silicon substrate is<111>Orientation, in this example, substrate can cut
Or skew.Although c-axis or<111>For nominal orientation, but it is in order at one or more of following reason and can selects +/-
Cutting angle between 1.5 degree：(1) controllability of process；(2) maximization of the K2 of acoustic resonator, and other reasons.Showing
In example, substrate growth is made on a face (such as aufwuchsplate).Ga faces are preferred growing surface (due to more ripe technique).
In this example, substrate has the resistance substrate rate more than 104ohm-cm, although there may be modification.In this example, in monocrystalline pressure
When electrodeposited material grows, the scope of substrate thickness is 100 μm and arrives 1mm.Of course, it is possible to there is other modifications, modification and alternative
Scheme.
As used herein, term " first ", " second ", " the 3rd " and " n-th " should be understood under its ordinary meaning.This
Class term (individually or together) does not necessarily imply that order, unless be readily understood by one of ordinary skilled in the art as this mode.In addition,
Term " top " and " bottom " can not have the implication in reference to gravitational direction, and should be understood under its ordinary meaning.This
A little terms should not unduly limit the scope of the claims herein.
As used herein, term substrate is associated with the material based on group III-nitride, should be nitrogenized based on III
The material of thing includes GaN, InGaN, AlGaN or is used as other alloys comprising III or compositionss or AlN of raw material
Deng.This kind of raw material includes polar GaN substrate (that is, maximum region area substrate on paper for (h k l) plane, wherein h
=k=0 and l are non-zero), (that is, maximum region area is by from above-mentioned polarity orientation towards (h k l) plane for non-polar GaN substrate
, the backing material that scope is orientated from about 80 degree to 100 degree of angle, wherein l=0 and at least one of h and k are non-
Zero), or semi-polarity GaN substrate (that is, maximum region area by from above-mentioned polarity orientation towards (h k l) plane, scope from big
The angle of about+0.1 degree to 80 degree or 110 degree to 179.9 degree is come the backing material that is orientated, at least in wherein l=0 and h and k
Person is non-zero).
As illustrated, this equipment can be closed in suitable encapsulation.As an example, the equipment of encapsulation can include upper
The combination in any of the element outside the element and this specification of text description.As used herein, term " substrate " can refer to
Be bulk substrate or can include cover growth structure, epitaxial region or functional areas comprising gallium and nitrogen, combination etc..
In this example, present disclose provides the progressively manufacture of monocrystalline acoustic resonator (SCAR) equipment.In addition, the disclosure is provided
, among miscellaneous equipment, for manufacturing two or more resonators together to provide the manufacture process of SCAR wave filter.
In example, for efficient operation and competitive cost, this process can be come using traditional high power capacity wafer manufacturing facility
Implement.Of course, it is possible to there is other modifications, modification and alternative.
Figure 14 to Figure 22 shows the manufacture method for the monocrystalline acoustic resonator equipment in example of the invention.These figures
Show merely illustrative, and should not unduly limit the scope of the claims herein.
Referring to the drawings, the example of manufacture process can be compactly described below：
1st, start；
2nd, the substrate member with surface region, such as material of a diameter of 150mm or 200mm are provided；
3rd, process surface region；
4th, the epitaxial material for including mono-crystalline piezoelectric materials is formed, the mono-crystalline piezoelectric materials coat surface areas are thick up to expecting
Degree；
5th, pattern epitaxial material using mask and etch process, with by by the pattern provided in epitaxial material
Cause the formation of expose portion of surface region forming trench region；
6th, upside bond pad metal is formed, which can include the duplexer with metal level, the metal level is served as a contrast in dorsal part
Lentamente react with etchant in end eclipse carving technology, it is as defined below；
7th, side electrode component is formed, including covers the first electrode component of a part for epitaxial material and cover upper side joint
Close the second electrode component of pad metal；
8th, a part for mask substrate the part from dorsal part removal (by etching) substrate, make covering first to be formed
The exposed first groove region of dorsal part of the epitaxial material of electrode member, and the dorsal part exposed second for making bond pad metal
Trench region；
9th, formed for covering the dorsal part resonator metal of the second electrode of the expose portion of epitaxial material (or piezoelectric film)
Material, to form the connection of the dorsal part from epitaxial material to bond pad metal, the dorsal part of the bond pad metal is connected to and covers
Cover the second electrode component of side engagement pad metal；
10th, resonator active regions are formed using mask and etch process, while making electrically and spatially first
Electrode member is isolated with the second electrode component of upside, while also finely tuning resonant capacitor；
11st, form dielectric material (such as SiO of the protection for covering the surface area on uper side surface2, SiN) covering
Thickness；And
12nd, other steps are performed on demand.
Step mentioned above is provided for forming resonator device using monocrystalline capacitor dielectric.As illustrated,
A pair of electrodes component is configurable for providing from the contact of the side of equipment.One of electrode member uses back side contact, should
Back side contact is connected to stacked laminations of metal to configure this pair of electrode.Certainly, depending on embodiment, one or more steps can be with
It is added, is removed, being combined, being rearranged, or being replaced, or there is other modifications, alternative and modification.Can run through
This specification and the further detail below of this manufacture method is more specifically found below.
As shown in figure 14, the method starts from providing substrate member 1410.The substrate member has surface region, in example
In, substrate member thickness (t) is 400 μm, its can have 150mm or 200mm diameter materials diameter, but there may be from
The modification of 50mm to 300mm.
In this example, process the surface region of substrate member.The process is generally included to clean and/or is adjusted.In this example,
Process occur in MOCVD or LPCVD reactors, the reactor with high temperature (such as in the scope from 940 DEG C to 1100 DEG C
In), and the ammonia of the pressure flow of a barometric pressure range is pressed onto with the air from 1/10th.Depending on embodiment,
Other processing procedures can be used.
In this example, the method includes forming epitaxial material, as illustrated, the epitaxial material includes that coat surface areas reach
The mono-crystalline piezoelectric materials 1420 of expectation thickness.Using trimethyl gallium (TMG), trimethyl aluminium (TMA), ammonia (NH3) and hydrogen (H2)
Configuration, using MOCVD or LPCVD growers, in air controlled environment, made with 940 DEG C of high temperature to 1100 DEG C of scopes
Up to 0.4 μm of thickness to 7.0 μ ms, this depends on the target resonance frequency of capacitor equipment to epitaxial material growth.The material
Also have every square centimeter 104To 1012Defect concentration, although there may be modification.
In this example, epitaxial material 1521 is patterned (Figure 15).Patterning is related to mask and etch process.Mask is usual
For 1 μm to 3 μm of photoresist.Under controlled conditions of temperature and pressure, used in RIE or ICP etch tools, chlorine based chemistries are anti-
Should (gas can include BCl3、Cl2And/or argon) be etched, to adjust etch-rate and side wall profile.Patterning passes through
Cause by the pattern provided in epitaxial material surface region expose portion formation come formed trench region (or through hole knot
Structure).
In this example, the method forms upside bond pad metal 1630 (Figure 16), and which can be included with metal level
Duplexer, as defined below, the metal level is lentamente reacted with etchant in dorsal part substrate etch technique.In this example,
Metal is refractory metal (such as tantalum, molybdenum, tungsten) or other metals (such as gold, aluminum, titanium or platinum).As institute it will be noted that, the gold
Category is subsequently used as the termination area for back side etch technique.
In this example, the method forms upside metal structure (Figure 17).As illustrated, the structure has side electrode structure
Part, which includes that the first electrode component 1741 for the part for covering epitaxial material is electric with cover upside bond pad metal second
Pole component 1742.The metal structure is made using refractory metal (such as tantalum, molybdenum, tungsten), and the thickness with 300nm, selected
Select for limiting the resonant frequency of capacitor equipment.
In this example, the method performs back-side process (Figure 18) by by downward upside-down mounting on the upside of substrate.In this example, should
Method includes the Patternized technique of the dorsal part of substrate.The technique is by from a part of using mask of back side etch substrate 1811
With remove technique, to form the exposed first groove region of dorsal part of the epitaxial material for making covering first electrode component, and make
The exposed second groove region of dorsal part of bond pad metal.In this example, the gas of the chloro used in RIE or ICP reactors
Body, and to be defined to control the temperature and pressure of etch-rate, selectivity and sidewall ramp performing etching.
Then, the method includes being formed for covering the back of the body of the second electrode of the expose portion of epitaxial material (or piezoelectric film)
Side resonator metal material 1943 (Figure 19), to form the connection of the dorsal part from epitaxial material to bond pad metal, the engagement
The dorsal part of pad metal is connected to the second electrode component for covering upside bond pad metal.
As illustrated, piezoelectric film 1921 be sandwiched in this pair of electrode configuring from the upside of substrate member 1911 and dorsal part it
Between.The component is<111>The silicon substrate of orientation, the silicon substrate have the resistivity more than 10ohm-cm.
In this example, the method uses mask and etch process (Figure 20) to be formed or pattern resonator active regions
2022.Final goal be making electrically and spatially first electrode component isolate with the second electrode component of upside, while
Resonant capacitor is finely tuned also.In this example, resonator active regions are 200 μm of 200 μ m.Patterning is using chloro RIE or ICP
Etching technique.
The method forms certain thickness protection materials 2150 (Figure 21).In this example, the method forms silicon dioxide (its
Formed compliant structure) and covering silicon nitride cover material combination.Silicon dioxide and silicon nitride material use silane, nitrogen
Combination with oxygen source being formed, and using PECVD chamber depositing.
The method forms the first electrode for being electrically coupled to the first upper electrode 2241 and the second upper electrode 2242 respectively
2261 and second electrode 2262 (Figure 22).The intrinsic device flag is 2201.As desired, in this example, the method can be with
Including other steps or other materials.
In this example, this method can also include for formed upper electrode structure, passivating material and back-side process this
One or more of a little techniques.In this example, surface cleaning part can be included including the substrate of covered structure, which uses HCl：
H2O(1：1) up to the time of scheduled volume, rinse afterwards and be put in sputter tool.
In the sputter tool for forming electrode metallization, the method is included in the exposed upside of mono-crystalline piezoelectric materials
Molybdenum (Mo) metal of upper use sputtering technologyCap layer deposition.In this example, if it is desired, can then formed
Thin titanium binding metal is deposited before Mo metalsAmong other characteristics, this kind of titanium is used as adhesive layer.
In example, the method performs mask and Mo (is stayed in detecting plate, co-planar waveguide so that Mo is etched away in place by Patternized technique
(CPW) in cross tie part, top board/first electrode, through hole bond pad/second electrode and alignment masked areas).In this example,
Titanium-aluminumIt is deposited on the Mo metals in detecting plate and CPW regions.In this example, Ti/Al is formed on
It is used for the copper for the wafer level inversion chip package-tin metal post-CuSn posts and crystal grain cutting of subsequent deposition on bond pad
It is deposited.In this example, the method forms dielectric passivation (25 μm of the spin polymer light-electrolyte of uper side surface
(ELECTRA WLP SH32-1-1)), or as an alternative, the combination of SiN or SiO2 is formed as covering upper surface.
In this example, the method include by expose optical-electronic medium and develop fall disk on dielectric material come pattern with
Open pad and detecting plate.Before back-side process is performed, the Patternized technique completes the upper area of substrat structure.Can pass through
Wear this specification and more specifically find the further detail below of this method below.
In this example, substrate is arranged on face down chip and is mounted (using photoresist) on carrier wafer to start
Dorsal part technique.In this example, back-side process uses multistep (such as two steps) technique.In this example, made using dorsal part grinding process
Into from about 500 μm to about 300 μm and less, the dorsal part grinding process can also include polishing and clean wafer skiving.
In example, dorsal part be coated with mask material (such as photoresist) and be patterned to open for piezoelectric trench region and
Bond pad areas.In this example, the method includes etching into the light engraving etching technique in substrate (which can for example be silicon).Showing
In example, the method coats dorsal part to open and expose the dorsal part region of piezoelectric using photoresist, and this makes whole diaphragm area sudden and violent
Dew, the whole diaphragm area include piezoelectric and the bond pad areas closed.In this example, the method also perform etching until
Till exposing piezoelectric and bond pad.In this example, as described further below, " rib " support member is to stem from
The feature of two-step process, although there may be modification.
In this example, dorsal part is patterned with the backside bond pad metal that aligns (electrode #2), cross tie part and is connect using photoresist
Close pad.In this example, using the HCl for utilizing dilution:H2O(1:1) cleaning procedure or other suitable techniques are processing
Dorsal part.In this example, if the dorsal part of wafer is patterned in a selectable manner using metal rather than large-area layer
Shape is deposited, then the method deposits the Mo metals of about 3000A in being additionally included in the region of selection.In this example, metal is formed to subtract
Few parasitic capacitance simultaneously makes it possible to connect up for circuit realiration dorsal part, and this is beneficial to different circuit node interconnection.Showing
In example, if it is desired, then can deposit thin titanium binding metal as binding material before Mo
In this example, the method also includes, for mechanical stability, formed back surface dielectric passivation (25 μm from
Rotation polymer light-electrolyte (such as ELECTRA WLP SH32-1-1)).In this example, in alternative example, the method includes
Deposition SiN and/or SiO2Suitable protection, isolation are provided and further feature are provided (if needing to fill dorsal part trench region
Will).
In this example, the method is subsequently isolated and/or unloads the substrate for completing to be transferred in silicon wafer carrier.The lining for completing
Bottom has the protection materials of multiple equipment and covering.In this example, substrate be now ready for cutting and cut off and other after
End technique, such as wafer-level packaging or other technologies.Of course, it is possible to there is other modifications, modification and alternative.
Figure 23 illustrate the present invention example in monocrystalline acoustic resonator equipment circuit diagram.The figure is merely illustrative, and should not
When the scope for being unduly limited claim herein.Circuit 2301 illustrates the block diagram with piezoelectric film 2322, the piezoelectricity
Film 2322 is sandwiched between the first upper electrode 2361 and the second upper electrode 2362.The join domain 2303 of block diagram 2301 is illustrated
In circuit diagram 2302, the circuit diagram 2302 shows equivalent circuit configuration.
Figure 24 to Figure 32 illustrates the manufacture method for monocrystalline acoustic resonator equipment in the example of the present invention.The figure is only
Example, and the scope of claim herein should not be unduly limited.
The example of the manufacturing process of alternative compactly can be described as follows：
1st, start；
2nd, the substrate member with surface region, such as material of a diameter of 150mm or 200mm are provided；
3rd, surface region is processed to prepare epitaxial growth；
4th, form the epitaxial material for including coat surface areas up to the mono-crystalline piezoelectric materials of expectation thickness；
5th, pattern epitaxial material using mask and etch process, with by by the pattern provided in epitaxial material
Cause the formation of expose portion of surface region forming trench region；As an alternative, the patterning of epitaxial material can also be used
Laser drilling processes and occur；
6th, upside bond pad metal is formed, which can include the duplexer with metal level, as defined below, the gold
Category layer is lentamente reacted with etchant in dorsal part substrate etch technique；
7th, side electrode component is formed, including covers the first electrode component of a part for epitaxial material and cover upper side joint
Close the second electrode component of pad metal；
8th, a part for mask substrate the part from dorsal part removal (by etching) substrate, make covering first to be formed
The dorsal part of the epitaxial material of electrode member exposes and makes the exposed single trench region of dorsal part of bond pad metal；Can use
Forming shallow " rib " structure, its target is to provide mechanical support for epitaxial material for two-step mask and etch process；
9th, formed for covering the dorsal part resonator metal of the second electrode of the expose portion of epitaxial material (or piezoelectric film)
Material, to form the connection of the dorsal part from epitaxial material to bond pad metal, the dorsal part of the bond pad metal is connected to and covers
Cover the second electrode component of side engagement pad metal；
10th, the resonator active regions with low surface leakage current are formed using passivation technology, the passivation technology is in electricity
First electrode component is made to isolate with the second electrode component of upside in power and spatially, while also finely tuning resonant capacitor；
Silane gas used in controlled temperature and pressure environment, using PECVD technique deposit dielectric passivation layer (such as SiN or SiO2) with control
The dielectric index of system refraction；
11st, (option includes SiO to the dielectric material of the protection of the surface area on formation covering uper side surface2, SiN or
Spin polymer coating) cladding thickness；And
12nd, other steps are performed on demand.
Step mentioned above is provided for forming resonator device using monocrystalline capacitor dielectric.As illustrated,
A pair of electrodes component is configured to supply the contact from the side of equipment.One of electrode member uses back side contact, the dorsal part
Contact is connected to stacked laminations of metal to configure this pair of electrode.Certainly, depending on embodiment, one or more steps can be added
Plus, be removed, be combined, being rearranged, or being replaced, or there is other modifications, alternative and modification.This theory can be run through
Bright book and the further detail below of this manufacture method is more specifically found below.
As shown in figure 24, the method starts from providing substrate member 2410.The substrate member has surface region, in example
In, substrate member thickness be 400 μm, its can have 150mm or 200mm diameter materials diameter, although there may be from
The modification of 50mm to 300mm.
In this example, process the surface region of substrate member.The process is generally included to clean and/or is adjusted.In this example,
Process occur in MOCVD or LPCVD reactors, the reactor with high temperature (such as in the scope from 940 DEG C to 1100 DEG C
In), and the ammonia of the pressure flow of a barometric pressure range is pressed onto with the air from 1/10th.
In this example, the method includes forming epitaxial material, as illustrated, which includes that coat surface areas reach expectation thickness
The mono-crystalline piezoelectric materials 2420 of (t).Using trimethyl gallium (TMG), trimethyl aluminium (TMA), ammonia (NH3) and hydrogen (H2) match somebody with somebody
Put, using MOCVD or LPCVD growers, in air controlled environment, extension is made with 940 DEG C of high temperature to 1100 DEG C of scopes
Up to 0.4 μm of thickness to 7.0 μ ms, this depends on the target resonance frequency of capacitor equipment to Material growth.The material also has
Have every square centimeter 104To 1012Defect concentration.
In this example, epitaxial material 2521 is patterned (Figure 25).Patterning is related to mask and etch process.Mask is usual
For 1 μm to 3 μm of photoresist.Under controlled conditions of temperature and pressure, used in RIE or ICP etch tools, chlorine based chemistries are anti-
Should (gas can include BCl3、Cl2And/or argon) be etched, to adjust etch-rate and side wall profile.Patterning passes through
Cause by the pattern provided in epitaxial material surface region expose portion formation come formed trench region (or through hole knot
Structure).
In this example, the method forms upside bond pad metal 2630 (Figure 26), and which can be included with metal level
Duplexer, as defined below, the metal level is lentamente reacted with etchant in dorsal part substrate etch technique.In this example,
Metal is refractory metal (such as tantalum, molybdenum, tungsten) or other metals (such as gold, aluminum, titanium or platinum).As noted, the metal
It is subsequently used as the termination area for back side etch technique.
In this example, the method forms upside metal structure (Figure 27).As illustrated, the structure has side electrode structure
Part, the side electrode component include the first electrode component 2741 for the part for covering epitaxial material and cover upside bond pad
The second electrode component 2742 of metal.The metal structure is made using refractory metal (such as tantalum, molybdenum, tungsten), and has 300nm
Thickness, be selected for limit capacitor equipment resonant frequency.
In this example, the method performs back-side process (Figure 28) by by downward upside-down mounting on the upside of substrate.In this example, should
Method includes the Patternized technique of the dorsal part of substrate 2811.The technique is by from a part of using mask of back side etch substrate
With remove technique, to form the exposed first groove region of dorsal part of the epitaxial material for making covering first electrode component, and make
The exposed second groove region of dorsal part of bond pad metal.Supporting member 2821 can be configured in two trench regions it
Between.In this example, supporting member can be recessed from bottom side surface region, although there may be modification.In this example, in RIE or
Chlorine-based gas used in ICP reactors, and come with the temperature and pressure for being defined to control etch-rate, selectivity and sidewall ramp
Perform etching.
Then, the method includes being formed for covering the back of the body of the second electrode of the expose portion of epitaxial material (or piezoelectric film)
Side resonator metal material 2943 (Figure 29), to form the connection of the dorsal part from epitaxial material to bond pad metal, the engagement
The dorsal part of pad metal is connected to the second electrode component for covering upside bond pad metal.
As illustrated, piezoelectric film 2921 is sandwiched in from the upside of substrate member and dorsal part between this pair of electrode for configuring.Should
Component is<111>The silicon substrate of orientation, the silicon substrate have the resistivity more than 10ohm-cm.
In this example, the method uses mask and etch process to be formed or pattern resonator active regions.Final goal
It is first electrode component is isolated with the second electrode component of upside, while also finely tuning resonant capacitance
Device.In this example, resonator active regions are 200 μm of 200 μ m.Patterning is using chloro RIE or ICP etching technique.
The method forms passivation layer 3050 (Figure 30) and certain thickness protection materials 3170 (Figure 31).In this example, should
Method forms the combination of silicon dioxide (which forms the structure of compliant) and the silicon nitride cover material for covering.Silicon dioxide and nitrogen
Silicon nitride material is formed using the combination of silane, nitrogen and oxygen source, and using PECVD chamber depositing.
The method forms the first electrode for being electrically coupled to the first upper electrode 3241 and the second upper electrode 3242 respectively
3261 and second electrode 3262 (Figure 32).Intrinsic equipment is marked as 3201.In this example, as desired, the method can be with
Including other steps or other materials.
In this example, this method can also include for formed upper electrode structure, passivating material and back-side process this
One or more of a little techniques.In this example, surface cleaning part can be included including this substrate of covered structure, its use
HCl：H2O(1：1) up to the time of scheduled volume, rinse afterwards and be put in sputter tool.
In the sputter tool for forming electrode metallization, the method is included in the exposed upside of mono-crystalline piezoelectric materials
Molybdenum (Mo) metal of upper use sputtering technologyCap layer deposition.In this example, if it is desired, can then formed
Thin titanium binding metal is deposited before Mo metalsAmong other characteristics, this kind of titanium is used as adhesive layer.
In example, the method performs mask and Mo (is stayed in detecting plate, co-planar waveguide so that Mo is etched away in place by Patternized technique
(CPW) in cross tie part, top board/first electrode, through hole bond pad/second electrode and alignment masked areas).In this example,
Titanium-aluminumIt is deposited on the Mo metals in detecting plate and CPW regions.In this example, Ti/Al is formed on
It is used for the copper for the wafer level inversion chip package-tin metal post-CuSn posts and crystal grain cutting of subsequent deposition on bond pad
It is deposited.In this example, the method forms dielectric passivation (25 μm of the spin polymer light-electrolyte of uper side surface
(ELECTRA WLP SH32-1-1)), or as an alternative, SiN or SiO2Combination be formed as cover upper surface.
In this example, the method include by expose optical-electronic medium and develop fall disk on dielectric material come pattern with
Open pad and detecting plate.Before back-side process is performed, the Patternized technique completes the upper area of substrat structure.Can pass through
Wear this specification and more specifically find the further detail below of this method below.
In this example, substrate is arranged on face down chip and is mounted (using photoresist) on carrier wafer to start
Dorsal part technique.In this example, back-side process uses multistep (such as two steps) technique.In this example, made using dorsal part grinding process
By skiving into from about 500 μm to about 300 μm and less, the dorsal part grinding process can also include polishing and clean wafer.
In this example, dorsal part is coated with mask material (such as photoresist) and is patterned to open the trench region for piezoelectric
And bond pad areas.In this example, the method includes etching into the light engraving etching technique in substrate (which can for example be silicon).
In example, the method coats dorsal part to open and expose the dorsal part region of piezoelectric using photoresist, and this makes whole diaphragm area
Exposure, the whole diaphragm area include piezoelectric and the bond pad areas closed.In this example, the method also performs etching directly
To exposing piezoelectric and bond pad.In this example, " rib " support member is the feature for stemming from two-step process, to the greatest extent
Pipe there may be modification.
In this example, dorsal part is patterned with dorsal part disk metal (electrode #2), cross tie part and the engagement of aliging using photoresist
Pad.In this example, using the HCl for utilizing dilution:H2O(1:1) cleaning procedure or other suitable techniques are processing the back of the body
Side.In this example, if the dorsal part of wafer is patterned in a selectable manner using metal rather than large-area stratiform
Deposition, then the method deposits the Mo metals of about 3000A in being additionally included in the region of selection.In this example, metal is formed to reduce
Parasitic capacitance simultaneously makes it possible to connect up for circuit realiration dorsal part, and this is beneficial to different circuit node interconnection.In example
In, if it is desired, then thin titanium binding metal can be deposited as binding material before Mo
In this example, the method also includes, for mechanical stability, formed back surface dielectric passivation (25 μm from
Rotation polymer light-electrolyte (such as ELECTRA WLP SH32-1-1)).In this example, in alternative example, the method includes
Deposition SiN and/or SiO2Suitable protection, isolation are provided and further feature are provided (if needing to fill dorsal part trench region
Will).
In this example, the method is subsequently isolated and/or unloads the substrate for completing to be transferred in silicon wafer carrier.The lining for completing
Bottom has the protection materials of multiple equipment and covering.In this example, substrate be now ready for cutting and cut off and other after
End technique, such as wafer-level packaging or other technologies.Of course, it is possible to there is other modifications, modification and alternative.
Figure 33 illustrate the present invention example in monocrystalline acoustic resonator equipment circuit diagram.The figure is merely illustrative, and should not
When the scope for being unduly limited claim herein.Circuit 3301 illustrates the block diagram with piezoelectric film 3322, the piezoelectricity
Film 3322 is sandwiched between the first upper electrode 3361 and the second upper electrode 3362.The join domain 3303 of block diagram 3301 is illustrated
In circuit diagram 3302, the circuit diagram 3302 shows equivalent circuit configuration.
In this example, the disclosure illustrates sound reflector structure, only if necessary to or expect, then can add the sound reflector
Structure.In this example, the sound reflector on monocrystalline acoustic resonator (SCAR) equipment can provide improved acoustical coupling, so-called
K2.In traditional BAW equipment, acoustic resonator is inserted in substrate/carrier material, although using, which is possibly stupid
It is weight and invalid.In this example, because a part for substrate is removed from the dorsal part of the mono-crystalline piezoelectric materials of equipment, therefore
The either side of acoustic resonator may not be needed or not expect sound reflector.However, being integrated in the substrate compared to reflector
Traditional bulk acoustic wave device, the sound reflector are integrated in the upside of equipment, and among other functions, the equipment can be serviced
In two kinds of functions：I () reduces moisture sensitivity to SCAR equipment, and (ii) is provided and filter apparatus and surrounding
It is acoustically separated from (similar to faraday cup).This specification can be run through and these features and further spy is more specifically found below
Levy.
Figure 34 and Figure 35 illustrate the present invention example in monocrystalline acoustic resonator equipment on configure reflector structure 3400,
3500.As illustrated, the equipment is with the feature similar with the equipment of previous example (Figure 14 to Figure 22).In addition, the equipment is matched somebody with somebody
Reflector structure is equipped with, which includes high acoustic impedance materials 3452,3552 (such as metal, such as Mo, W, Cu, Ta) and Low ESR material
The alternate a quarter of material 3451,3551 (such as electrolyte, such as in order to form sound reflector on acoustic resonator equipment)
Wavelength layer.Figure 35 also illustrates that the first electrode 3561 for being flatly connected to the first upper electrode 3541 and is vertically connected to second
The second electrode 3562 of upper electrode 3542.Intrinsic equipment is marked as 3501.Of course, it is possible to exist other modifications, modification and
Alternative.
Figure 36 illustrates the circuit diagram with the reflector structure of the monocrystalline acoustic resonator integration of equipments in above-mentioned figure.The figure is only
Example, and the scope of claim herein should not be unduly limited.As illustrated, circuit 3601 is with piezoelectric film
3622 block diagram, the piezoelectric film 3622 are sandwiched between the first upper electrode 3661 and the second upper electrode 3662.Block diagram 3601
Join domain 3603 be illustrated in circuit diagram 3602, the circuit diagram 3602 shows equivalent circuit configuration.
In this example, the present invention can provide acoustic resonator equipment, and which includes body substrate member, and there is surface region with
And certain thickness material.In this example, body substrate has the first sunk area and the second sunk area and is arranged in first
Supporting member between sunk area and the second sunk area.
In this example, the equipment has certain thickness mono-crystalline piezoelectric materials, and which is formed as coat surface areas.In example
In, the mono-crystalline piezoelectric materials of the thickness have the exposed dorsal part region for being configured with the first sunk area, and are configured with second
The contact region of sunk area.The equipment has the first electrode structure on the top of the mono-crystalline piezoelectric materials for being formed as covering the thickness
Part, and be formed as the second electrode component of the bottom of the mono-crystalline piezoelectric materials for covering the thickness, with using first electrode component
The mono-crystalline piezoelectric materials of the thickness are sandwiched with second electrode component.In this example, second electrode component is from including exposed dorsal part
The bottom in region extends to contact region.In this example, the equipment have be configured with contact region second electrode structure and
It is configured with the first electrode structure of first electrode component.
As illustrated, the equipment is also with the dielectric material for covering the upper surface area for forming structure, the formation structure
Nappe substrate member.The equipment has sound reflector structure, the sound reflector structure be configured to cover first electrode component, on
Portion, bottom and second electrode component.As illustrated, sound reflector structure has multiple four be spatially configured in dielectric material
/ mono- wavelength layer.
Figure 37 and Figure 38 illustrate the present invention example in monocrystalline acoustic resonator equipment on configure reflector structure 3700,
3800.The figure is merely illustrative, and should not be unduly limited the scope of claim herein.As illustrated, the equipment
With the feature similar with the equipment of previous example (Figure 24 to Figure 32).In addition, the device configuration has reflector structure, the reflection
Device structure includes high acoustic impedance materials 3752,3852 (such as metal, such as Mo, W, Cu, Ta) and low resistivity materials 3751,3752
(such as electrolyte, such as in order to form sound reflector on acoustic resonator equipment) alternate quarter-wave layer.Figure 38
Also illustrate that the first electrode 3861 for being flatly connected to the first upper electrode 3841 and be vertically connected to the second upper electrode
3842 second electrodes 3862.Intrinsic device is marked as 3801.Of course, it is possible to there is other modifications, modification and alternative.
Figure 39 shows the circuit diagram with the reflector structure of the monocrystalline acoustic resonator integration of equipments in above-mentioned figure.The figure is only
For example, and the scope of claim herein should not be unduly limited.As illustrated, circuit 3901 is with piezoelectricity
The block diagram of film 3922, the piezoelectric film 3922 are sandwiched between the first upper electrode 3961 and the second upper electrode 3962.Block diagram
3901 join domain 3903 is illustrated in circuit diagram 3902, and the circuit diagram 3902 shows equivalent circuit configuration.
In this example, the present invention can provide acoustic resonator equipment, and the acoustic resonator equipment includes body substrate member, and has
There are surface region and certain thickness material.In this example, body substrate have the first sunk area and the second sunk area, with
And the supporting member being arranged between the first sunk area and the second sunk area.
In this example, the equipment has certain thickness mono-crystalline piezoelectric materials, and the mono-crystalline piezoelectric materials are formed as covering table
Face region.In this example, the mono-crystalline piezoelectric materials of the thickness have the exposed dorsal part region for being configured with the first sunk area, with
And it is configured with the contact region of the second sunk area.The equipment has the top of the mono-crystalline piezoelectric materials for being formed as covering the thickness
First electrode component and be formed as the mono-crystalline piezoelectric materials for covering the thickness bottom second electrode component, to utilize the
One electrode member and second electrode component sandwich the mono-crystalline piezoelectric materials of the thickness.In this example, second electrode component is from including
The bottom in exposed dorsal part region extends to contact region.In this example, the equipment is electric be configured with contact region second
Pole structure and it is configured with the first electrode structure of first electrode component.
As illustrated, the equipment is also with the dielectric material for covering the upper surface area for forming structure, the formation structure
Nappe substrate member.The equipment has sound reflector structure, the sound reflector structure be configured to cover first electrode component, on
Portion, bottom and second electrode component.As illustrated, sound reflector structure has multiple four be spatially configured in dielectric material
/ mono- wavelength layer.
Figure 40 illustrate the present invention example in monocrystalline acoustic resonator equipment base surface area and the simplification figure of top surface areas.
As illustrated, Figure 40 includes top view 4001 and upward view 4003, each view has corresponding viewgraph of cross-section 4002 respectively
With 4004.These figures show the resonator device similar to said resonator equipment.Piezoelectric film 4020 is arranged to covering
Substrate 4010.The upside of the equipment includes the first upper electrode 4041 and the second lower electrode 4042.The downside of the etching of substrate
Including lower electrode 4043.Of course, it is possible to there is modification, modification and alternative.
Figure 41 and Figure 44 show the monocrystalline acoustic resonator in the wave filter ladder network being configured in the example of the present invention
The simplified example of equipment.The figure is merely illustrative, and should not be unduly limited the scope of claim herein.In example
In, following description provides for manufacturing together, among other components, two or more resonators are filtered with producing SCAR
The diagram and manufacture process of ripple device.
With reference to Figure 41, as illustrated, the method start from taking for SCAR equipment 4100 physics realization (in fig. 22
It was found that details) and it is converted into component 4102.The component includes first electrode 4161, second electrode 4162, and two
Resonance circuit equipment 4101 between individual electrode.In this example, each acoustic resonator equipment includes the lining of the body with surface region
Bottom structure, and certain thickness material.In this example, body substrat structure there is the first sunk area and the second sunk area with
And the supporting member being arranged between the first sunk area and the second sunk area.Of course, it is possible to there is modification.
In this example, the equipment has certain thickness mono-crystalline piezoelectric materials, and the mono-crystalline piezoelectric materials are formed as covering table
Face region.In this example, the certain thickness mono-crystalline piezoelectric materials have the exposed dorsal zone for being configured with the first sunk area
Domain, and it is configured with the contact region of the second sunk area.In this example, mono-crystalline piezoelectric materials have the thickness more than 0.4 micron
Degree, although there may be modification.In this example, mono-crystalline piezoelectric materials are characterized in that less than 1012Defect/cm2Dislocation density, to the greatest extent
Pipe there may be modification.
In this example, the equipment has the first electrode on the top for being formed as covering the certain thickness mono-crystalline piezoelectric materials
Component, and the second electrode component of the bottom for being formed as covering the certain thickness mono-crystalline piezoelectric materials, with electric using first
Pole component and second electrode component sandwich the certain thickness mono-crystalline piezoelectric materials, and the second electrode component is from including the exposed back of the body
The bottom of side region extends to contact region.In this example, second electrode structure is configured with contact region, and first electrode structure is matched somebody with somebody
It is equipped with first electrode component.In this example, the equipment also with cover formed structure upper surface area dielectric material and
Sound reflector structure, the formation structure nappe substrate member, the sound reflector structure be configured to cover first electrode component, on
Portion, bottom and second electrode component.
As an alternative, the equipment can include any one of other preceding features and other.Of course, it is possible to there are other
Modification, modification and alternative.This specification can be run through and more specifically find the further detail below of this example below.
With reference to Figure 42, the series shunt configuration 4200 of component R1, R2, R3, R4, R5, R6 and R7 is shown, although can
There is deformation and change.That is, the configuration can include more substantial resonator or less resonator, and this depends on example.
As shown in the figure, it is illustrated that wave filter ladder network of the configuration in acoustic filter, the acoustic filter configure SCAR by series shunt
Composition.
Referring now to Figure 43, monolithic filter ladder network have be configured on common substrate component be numbered R1, R2,
Multiple monocrystalline acoustic resonator equipment of R3, R4, R5, R6 and R7.Circuit diagram 4300 corresponds to device configuration 4301.Of course, it is possible to
Greater amount or less equipment that presence has been configured together.
In this example, each acoustic resonator equipment includes the body substrat structure with surface region, and certain thickness
Material.In this example, body substrat structure has the first sunk area and the second sunk area and is arranged in the first sunk area
And second supporting member between sunk area.Of course, it is possible to there is modification.
In this example, the equipment has certain thickness mono-crystalline piezoelectric materials, and the mono-crystalline piezoelectric materials are formed as covering table
Face region.In this example, the certain thickness mono-crystalline piezoelectric materials have the exposed dorsal zone for being configured with the first sunk area
Domain and it is configured with the contact region of the second sunk area.In this example, mono-crystalline piezoelectric materials have the thickness more than 0.4 micron
Degree, although there may be modification.In this example, mono-crystalline piezoelectric materials are characterized in that less than 1012Defect/cm2Dislocation density, to the greatest extent
Pipe there may be modification.
In this example, the equipment has the first electrode on the top for being formed as covering the certain thickness mono-crystalline piezoelectric materials
Component, and the second electrode component of the bottom for being formed as covering the certain thickness mono-crystalline piezoelectric materials, with electric using first
Pole component and second electrode component sandwich the certain thickness mono-crystalline piezoelectric materials, and the second electrode component is from including the exposed back of the body
The bottom of side region extends to contact region.In this example, second electrode structure is configured with contact region, and first electrode structure is matched somebody with somebody
It is equipped with first electrode component.In this example, the equipment also with cover formed structure upper surface area dielectric material and
Sound reflector structure, the formation structure nappe substrate member, the sound reflector structure be configured to cover first electrode component, on
Portion, bottom and second electrode component.As an alternative, the equipment can include any one of other preceding features or other.
As illustrated, R1, R3, R5 and R7 are configured in a series arrangement so that the second electrode structure of R1 is connected to the of R3
One electrode structure, the second electrode structure of R3 are connected to the first electrode structure of R5, and the second electrode structure of R5 is connected to R7's
First electrode structure.The circuit also includes the first segment between the first electrode structure of the second electrode structure and R3 for being configured in R2
Point, the secondary nodal point between the first electrode structure of the second electrode structure and R5 that are configured in R3, and be configured in R5 second
The 3rd node between the first electrode structure of electrode structure and R7.
In this example, R2 is configured between primary nodal point and lower common electrode so that the first electrode structure of R2 connects
Primary nodal point is connected to, and the second electrode structure of R2 is connected to lower common electrode.In this example, R4 is configured in second section
Between point and lower common electrode so that first electrode structure is connected to secondary nodal point, and second electrode structure is connected to bottom
Public electrode.In this example, R6 is configured between the 3rd node and lower common electrode so that the first electrode structure of R6 connects
The 3rd node is connected to, and the second electrode structure of R6 is connected to lower common electrode.
In the example, it is assumed that as using dorsal part through hole (from backside electrode 2 to side electrode 2), individual equipment is in upper table
With two electrodes, then this circuit is routed accordingly in each the SCAR equipment with dorsal part through hole, such as in face (or public side)
Shown in upper right side.In this example, including 7 dorsal part through holes, these through holes can consume the greater part of substrat structure.Can be with
The further example of this circuit arrangement is found through this specification and below more specifically.
It is with reference to Figure 44, illustrated below to be reduced for wave filter configuration or or even minimal save substrate surface using through hole
Product.Circuit diagram 4400 corresponds to device configuration 4401.In this example, the value scope for wave filter configuration drops to 1 from 7, or
Single through hole (illustrating in right).In this example, this diagram is using with downstream condition：(1) input of R1 and the output quilt of R7
It is arranged such that they are side gusset 1；(2) maximize the quantity of internal node, these internal nodes use common node；
And (3) common node (bottom of R2, R4, R6) is combined in the upper surface of substrate.As illustrated, only include single through hole, this
Cause the saving of expense, technique and Substrate Area.Certainly, existence range can be from single through hole to 7 through holes or more multiple
Example.
In this example, connect and metallize using dorsal part, second electrode is shared on public internal node.In this example,
Connect shared first electrode on the upside of use, connection on the upside of this is linked together each first electrode.In this example, only R4 has
Through-hole structure, the through-hole structure are connected to relatively low public electrode component.Of course, it is possible to there is modification, modification and alternative.
In this example, less through hole causes less parasitic capacitance or other loads, and reduces technique, and improves substrate use
Rate, this is beneficial to manufacture highly integrated equipment.
Figure 45 to Figure 52 illustrates the two-part monocrystalline acoustic resonator equipment and three component type lists of example of the invention
The simplified example of brilliant acoustic resonator equipment.The figure is merely illustrative, and should not be unduly limited claim herein
Scope.In this example, below description is provided for two-part or the diagram of three component type SCAR equipment, and these SCAR equipment exist
It is used for realizing wave filter in circuit-level.In this example, some equipment do not include through-hole structure, and this is beneficial and more efficient.
With reference to Figure 45, it is illustrated that show the wave filter trapezium structure 4500 being discussed above, in this example, the wave filter is trapezoidal
Structure 4500 can be by two-part equipment, and R1, R2, R3, R4, R5, R6 and R7 are configuring.As illustrated, in this example, R1 and
R2 can be configured to form the two-part equipment 4501 of series shunt.As illustrated, in this example, R6 and R7 can be matched somebody with somebody
It is set to the two-part equipment 4502 to form series shunt.Of course, it is possible to there are other modifications.
With reference to Figure 46, it is illustrated that show the identical wave filter trapezium structure 4600 being discussed above, in this example, the filtering
Device trapezium structure 4600 can be configured to three component types " Y " equipment and " Pi " equipment.In this example, R1, R2 and R3 can match somebody with somebody
It is set to composition series connection-shunting-series connection " Y " element SCAR equipment 4601.In this example, R4, R5 and R6 are configurable to a group composition
Stream-series connection-shunting three component types " Pi " SCAR equipment 4602.In this example, other three component types " Y " and " Pi " SCAR equipment can
Construct with by the network, such as R5-R6-R7 composition " Y " equipment, R2-R3-R4 composition " Pi " equipment.Of course, it is possible to there is which
Its alternative, modification and modification.In the example with reference to Figure 47, it is illustrated that lowest count can be provided in SCAR wave filter
Through hole or any desired counting, this depends on embodiment.Figure 47 can be illustrated and the configuration (4400/ shown in Figure 44
4401) similar configuration (4700/4701).This specification can be run through and the further of this example is more specifically found below
Details.
In this example, the description shows three end SCAR equipment of series connection-shunting two-part by Figure 48.In this example,
Except other combinations, R1 as noted and R2 can be configured by two easy SCAR structures.In this example, this kind of two
Component type equipment 4801 does not have through hole, and has two terminals (including T1, T2), and the two terminals are in the upper of substrate member
Side, and third terminal (T3) is in the dorsal part of substrate.In this example, the description shows shunting-three end of series connection two-part
SCAR equipment 4800.In this example, series connection-shunting device is shown with reference to R1 to R2 from left to right.Left side is arrived from right to left,
Shunting-series devices be illustrated and with aforementioned device identical physical arrangement.Of course, it is possible to there is other modifications, modification
And alternative.
Referring now to Figure 49, the description shows not " Y " three end SCAR equipment with through-hole structure, this reduces equipment
Size.Describe as shown in the figure and, in addition to other combinations, in this example, R1, R2 and R3 form three component types, three end
The SCAR equipment 4900 that " Y " is configured.This kind of example has significant feature, and such as without through-hole structure, T1, T2, T3 are to be configured in
Substrate member it is upside, for the connection of closing line.In this example, the equipment also has node two (2), and which is for R1, R2
With R3 be it is public, and " internally " configuration and be connected on the dorsal part of substrate member.In this example, the equipment is series connection point
Stream arranged in series, and there are three single SCAR regions, three corresponding to composition " Y " configuration equipment, these three SCAR regions
Equipment.
Referring now to Figure 50, the description shows " Y " the three end SCAR equipment with single through-hole structure, this reduces and sets
Standby size.Describe as shown in the figure and, in addition to other combinations, in this example, R3, R4 and R5 form three component types three
The SCAR equipment 5000 that end " Y " configures.This kind of example has significant feature, such as on dorsal part is connected to substrate member
Front side or the single through hole of upside.In this example, the equipment also has T1 and T2 contacts, and which is configured to the dorsal part of substrate and can connect
Enter the dorsal part to substrate.T3 is configured to the front side of substrate and is accessible to the front side of substrate.For R3, R4 and R5 are public section
One (1) " internally " of point is configured and is connected on the front side of substrate member.In this example, the equipment is that series shunt series connection is matched somebody with somebody
Put, and there are three single SCAR regions, these three SCAR regions configure three equipment of equipment corresponding to composition " Y ".
With reference to Figure 51, in this example, the description shows " Pi " the three end SCAR equipment with single through-hole structure.As schemed
Shown, in addition to other combinations, R2, R3 and R4 form the SCAR equipment 5100 that three component type, three ends " Pi " is configured.It is this kind of to set
Getting everything ready has significant feature, such as by the single dorsal part through-hole structure of the front side of dorsal part connection route to substrate.In example
In, the node two (2) for each of equipment R2 and equipment R3 is connected to each other on dorsal part and forms terminal 1 (T1).
In example, terminal 3 (which is T3) is the contact of the front side for being accessible to substrate.In this example, for equipment R3 and R4 in it is every
The node one (1) of one is configured to front side and is connected to front side above and forms terminal 2 (T2).In this example, the equipment is to divide
Stream series shunt configuration.In this example, the equipment includes three single SCAR regions, and these three SCAR regions correspond to and formed
Three equipment of three (3) individual elements, these three elements are formed and constitute " Pi " configuration.Shown is shunting series shunt three
(3) simplified illustration of three end of component type " Pi " SCAR equipment, the SCAR equipment have single logical on R4 diverter branchs or component
Pore structure.Of course, it is possible to there is modification, alternative and modification.
With reference to Figure 52, in this example, the description shows that " Pi " the three end SCAR with two (2) individual dorsal part through-hole structures sets
It is standby.As illustrated, describing equipment in previous example, however, in this example, this equipment has on terminal 1 (T1)
There are additional vias, the terminal 1 is configured to the contact region from dorsal part to front side.In this example, the equipment has significant feature,
Such as it is used for routeing back side contact region to be connected to the two (2) of the front side of substrate individual dorsal part through-hole structures.In this example, this sets
Getting everything ready has node two (2) for each equipment component R2 and R3, and the node two (2) is connected to each other on dorsal part and and then uses
Through-hole structure is routed to the front side of substrate to form terminal 1 (T1).In this example, terminal 3 (T3) is configured to and is accessible to base
The contact of the front side of plate substrate.In this example, the node 1 (1) for each equipment component R3 and R4 is configured to front side and connects
On front side and formed terminal 2 (T2).In this example, the equipment provides shunting series shunt configuration.In addition, the equipment includes
Using with the three of device-dependent single SCAR regions, these equipment form and constitute " Pi " configuration.In this example, it is shown
Be three end " Pi " SCAR equipment 5200 of shunting series shunt three component type, the SCAR equipment 5200 has on R4 diverter branchs
Single through hole and single through-hole structure 1, the single through-hole structure 1 are connected to the internal node two (2) of the R2 and R3 for configuring
And make T1 be connected to the front side of substrate.
Although the comprehensive description for specific embodiment above, can be using various modifications, alternative constructions and equivalent
Thing.Therefore, it is hereinabove described and illustrated to be not construed as limiting the scope of the present invention being defined by the appended claims.
Claims (38)
1. a kind of monolithic filter ladder network, including：
Multiple monocrystalline acoustic resonator equipment of the label on common substrate component from R1 to RN are configured in, wherein, N is more than 1
Integer, each described acoustic resonator equipment include：
Body substrat structure with surface region and the material of a thickness, the body substrat structure have the first sunk area and the
Two sunk areas and the supporting member being arranged between first sunk area and second sunk area；
The mono-crystalline piezoelectric materials of the thickness for being formed as covering the surface region, the mono-crystalline piezoelectric materials of the thickness have matches somebody with somebody
The exposed dorsal part region for being equipped with first sunk area and the contact region for being configured with second sunk area, it is described
Mono-crystalline piezoelectric materials have the thickness more than 0.4 micron, and the mono-crystalline piezoelectric materials are characterized in that less than 1012Defect/cm2Position
Dislocation density；
First electrode component, the first electrode component are formed as the top of the mono-crystalline piezoelectric materials for covering the thickness；
Second electrode component, the second electrode component are formed as the bottom of the mono-crystalline piezoelectric materials for covering the thickness, with profit
The mono-crystalline piezoelectric materials of the thickness, the second electrode structure are sandwiched with the first electrode component and the second electrode component
Part extends to the contact region from the bottom including the exposed dorsal part region；
It is configured with the second electrode structure of the contact region；
It is configured with the first electrode structure of the first electrode component；
Covering forms the dielectric material of the upper surface area of structure, and the formation structure covers the body substrate member；And
Sound reflector structure, the sound reflector structure are configured to cover the first electrode component, the top, the bottom
With the second electrode component.
2. equipment as claimed in claim 1, wherein, the supporting member is configured in the bottom surface area with the body substrat structure
In the consistent plane in domain.
3. equipment as claimed in claim 1, wherein, the supporting member is configured in the bottom relative to the body substrat structure
In the plane that face region offsets and is recessed.
4. equipment as claimed in claim 1, wherein, the mono-crystalline piezoelectric materials are characterized in that in the inspection being associated with single crystal film
The X-ray diffraction that device angle (2- θ) place has clear peak value is surveyed, and the full width at half maximum (FWHM) of the mono-crystalline piezoelectric materials is tested
Amount is less than 1.0 °.
5. equipment as claimed in claim 1, wherein, at least equal to 7, R1, R3, R5 and R7 are in a series arrangement configuring for N so that
The second electrode structure of R1 is connected to the first electrode structure of R3, and the second electrode structure of R3 is connected to R5's
The first electrode structure, the second electrode structure of R5 are connected to the first electrode structure of R7；The equipment is also wrapped
Include：Primary nodal point between the first electrode structure of the second electrode structure and R3 that are configured in R2；It is configured in R3's
Secondary nodal point between the second electrode structure and the first electrode structure of R5；And it is configured in the described second electric of R5
The 3rd node between pole structure and the first electrode structure of R7.
6. equipment as claimed in claim 1, wherein, at least equal to 7, R1, R3, R5 and R7 are in a series arrangement configuring for N so that
The second electrode structure of R1 is connected to the first electrode structure of R3, and the second electrode structure of R3 is connected to R5's
The first electrode structure, the second electrode structure of R5 are connected to the first electrode structure of R7；The equipment is also wrapped
Include：Primary nodal point between the first electrode structure of the second electrode structure and R3 that are configured in R2；It is configured in R3's
Secondary nodal point between the second electrode structure and the first electrode structure of R5；And it is configured in the described second electric of R5
The 3rd node between pole structure and the first electrode structure of R7；Wherein, R2 is configured in the primary nodal point and bottom
Between public electrode；R4 is configured between the secondary nodal point and the lower common electrode；And R6 be configured in it is described
Between 3rd node and the lower common electrode.
7. equipment as claimed in claim 1, wherein, at least equal to 7, R1, R3, R5 and R7 are in a series arrangement configuring for N so that
The second electrode structure of R1 is connected to the first electrode structure of R3, and the second electrode structure of R3 is connected to R5's
The first electrode structure, and the second electrode structure of R5 is connected to the first electrode structure of R7；The equipment
Also include：Primary nodal point between the first electrode structure of the second electrode structure and R3 that are configured in R2；It is configured in
Secondary nodal point between the first electrode structure of the second electrode structure and R5 of R3；And it is configured in described the of R5
The 3rd node between two electrode structures and the first electrode structure of R7；Wherein, R2 be configured in the primary nodal point and
Between lower common electrode so that the first electrode structure of R2 is connected to the second electrode of the primary nodal point and R2
Structure is connected to the lower common electrode；R4 is configured between the secondary nodal point and the lower common electrode so that
The first electrode structure is connected to the secondary nodal point and the second electrode structure is connected to the lower common electrode；With
And R6 is configured between the 3rd node and the lower common electrode so that the first electrode structure of R6 is connected to
The second electrode structure of the 3rd node and R6 is connected to the lower common electrode.
8. equipment as claimed in claim 1, wherein, at least equal to 7, R1, R2 and R3 are configured to shared first public section to N
Point；Wherein, R5, R6 and R7 are configured to share first common node；Wherein, R1, R2 and R3 are configured to shared second
Common node；Wherein, R5, R6 and R7 are configured to shared second common node；And R4 to be configured to shared described first public
Conode.
9. equipment as claimed in claim 1, wherein, including the plurality of acoustic resonator of R1, R2, R3, R4, R5, R6 or R7
At least one of equipment includes the through-hole structure for contact structure.
10. equipment as claimed in claim 1, wherein, at least equal to 7, R1, R2 and R3 are configured to shared first public section to N
Point；Wherein, R5, R6 and R7 are configured to share first common node；Wherein, R1, R2 and R3 are configured to shared second
Common node；Wherein, R5, R6 and R7 are configured to shared second common node；R4 is configured to share the first public section
Point；And R4 is configured with the through-hole structure for being connected to first common node.
11. equipment as claimed in claim 1, wherein, the mono-crystalline piezoelectric materials of the thickness are selected from AlN, AlGaN, InN, BN
At least one of or other III-nitrides.
12. equipment as claimed in claim 1, wherein, the mono-crystalline piezoelectric materials of the thickness are selected from the list for including high-k dielectrics
At least one of eutectic oxide ZnO or MgO.
13. equipment as claimed in claim 1, wherein, it is each in the first electrode structure and the second electrode structure
Person is selected from one of tantalum or molybdenum；Wherein, the body substrat structure is selected from silicon, GaAs, gallium nitride, aluminium nitride, aluminium oxide etc..
A kind of 14. configurable monolithic filter ladder networks, including：
Multiple monocrystalline acoustic resonator (SCAR) equipment of the label on common substrate component from R1 to RN are configured in, wherein, N is big
In 1 integer, each described acoustic resonator equipment includes：
Body substrat structure with surface region and the material of a thickness, the body substrat structure have the first sunk area and the
Two sunk areas and the supporting member being arranged between first sunk area and second sunk area；
The mono-crystalline piezoelectric materials of the thickness for being formed as covering the surface region, the mono-crystalline piezoelectric materials of the thickness have matches somebody with somebody
The exposed dorsal part region for being equipped with first sunk area and the contact region for being configured with second sunk area, it is described
Mono-crystalline piezoelectric materials have the thickness more than 0.4 micron, and the mono-crystalline piezoelectric materials are characterized in that less than 1012Defect/cm2Position
Dislocation density；
First electrode component, the first electrode component are formed as the top of the mono-crystalline piezoelectric materials for covering the thickness；
Second electrode component, the second electrode component are formed as the bottom of the mono-crystalline piezoelectric materials for covering the thickness, with profit
The mono-crystalline piezoelectric materials of the thickness, the second electrode structure are sandwiched with the first electrode component and the second electrode component
Part extends to the contact region from the bottom including the exposed dorsal part region；And
It is configured with the second electrode structure of the contact region；
It is configured with the first electrode structure of the first electrode component；
Covering forms the dielectric material of the upper surface area of structure, and the formation structure covers the body substrate member.
15. equipment as claimed in claim 14, wherein, N is at least equal to 7；Wherein, R1 and R2 are configured to form series shunt
First two-part equipment；And R6 and R7 are configured to form series shunt the second two-part equipment.
16. equipment as claimed in claim 14, wherein, N is at least equal to 7；And wherein, R1, R2 and R3 are configured to composition
First series connection-shunting-series connection Y-component formula SCAR equipment；And R4, R5 and R6 are configured to composition shunting-series connection-shunting ternary
Part Pi formula SCAR equipment.
17. equipment as claimed in claim 14, wherein, the mono-crystalline piezoelectric materials of the thickness are selected from AlN, AlGaN, InN, BN
At least one of or other III-nitrides.
18. equipment as claimed in claim 14, wherein, the mono-crystalline piezoelectric materials of the thickness are selected from and include high-k dielectrics
At least one of monocrystalline oxide ZnO or MgO.
19. equipment as claimed in claim 14, wherein, it is each in the first electrode structure and the second electrode structure
Person is selected from one of tantalum or molybdenum；Wherein, the body substrat structure is selected from silicon, GaAs, gallium nitride, aluminium nitride, aluminium oxide etc..
A kind of 20. configurable monocrystalline acoustic resonator (SCAR) integration of equipments circuits, including multiple SCARs of the label from 1 to N set
It is standby, wherein, N is 2 and the integer more than 2, and each described SCAR equipment has the surface region for being formed as covering substrate member
A thickness mono-crystalline piezoelectric materials, the mono-crystalline piezoelectric materials are characterized in that less than 1012Defect/cm2Dislocation density.
A kind of 21. monocrystalline sound electronic equipments, including：
Substrate, the substrate have surface region；
It is connected to the first electrode material of a part for the substrate；
Monocrystalline capacitors dielectrics, the monocrystalline capacitors dielectrics have the thickness more than 0.4 micron and cover described
The expose portion of surface region is connected in parallel to the first electrode material, and the monocrystalline capacitors dielectrics are characterized in that and are less than
1012Defect/cm2Dislocation density；And
Cover the second electrode material of the monocrystalline capacitors dielectrics.
22. equipment as claimed in claim 21, wherein, the monocrystalline capacitor material be selected from AlN, AlGaN, InN, BN or its
At least one of its III-nitride.
23. equipment as claimed in claim 21, wherein, the monocrystalline capacitor material is selected from the monocrystalline for including high-k dielectrics
At least one of oxide ZnO or MgO.
24. equipment as claimed in claim 21, wherein, the monocrystalline capacitors dielectrics are configured in the first strain
State is compensating the substrate；Wherein, the monocrystalline capacitors dielectrics are arranged to the exposure for covering the substrate
Part.
25. equipment as claimed in claim 21, wherein, the first electrode material by the substrate dorsal part configuring,
And the monocrystalline capacitors dielectrics are attached to by the through-hole structure being configured on the dorsal part of the substrate.
26. equipment as claimed in claim 21, wherein, the first electrode material by the substrate dorsal part configuring,
The configuration is including the through-hole structure being configured in the thickness of the substrate.
27. equipment as claimed in claim 21, wherein, the surface region is configured with deviation angle.
28. equipment as claimed in claim 21, also including reflector region, it is electric that the reflector region is configured to described first
Pole material.
29. equipment as claimed in claim 21, also including reflector region, it is electric that the reflector region is configured to described second
Pole material；Wherein, each of the first electrode material and the second electrode material are selected from refractory metal.
30. equipment as claimed in claim 21, wherein, it is each in the first electrode material and the second electrode material
Person is selected from one of tantalum or molybdenum.
31. equipment as claimed in claim 21, wherein, the first electrode material and the monocrystalline capacitors dielectrics bag
Include the first interface area that there is no oxidiferous material.
32. equipment as claimed in claim 21, wherein, the first electrode material and the monocrystalline capacitors dielectrics bag
Include the second contact surface area that there is no oxidiferous material.
33. equipment as claimed in claim 21, the equipment also include nucleation material, and the nucleation material is arranged on the list
Between brilliant capacitors dielectrics and the first electrode material；And the equipment also includes cover material, the cover material sets
Put between the monocrystalline capacitors dielectrics and the second electrode material.
34. equipment as claimed in claim 21, wherein, the monocrystalline capacitors dielectrics are characterized in that less than once
FWHM；And the equipment is also included from parameter derived from two-port analysis.
35. equipment as claimed in claim 21, wherein, the first electrode material includes first electrode structure, described first
Electrode structure is configured and is routed near the plane parallel to the contact region for being attached to the second electrode material.
36. equipment as claimed in claim 21, wherein, the surface region of the substrate is exposed and exposed crystal
Material.
37. equipment as claimed in claim 21, wherein, the monocrystalline capacitors dielectrics are configured to 6000 meter per seconds
The velocity of sound and the bigger velocity of sound propagate longitudinal signal；And the equipment also includes being connected to the first of the first electrode material
Contact and the second contact for being connected to the second electrode material so that each in first contact and second contact
Person is configured with co-planar arrangement.
38. equipment as claimed in claim 21, wherein, the Semiconductor substrate selected from silicon, GaAs, gallium nitride, aluminium nitride,
Aluminium oxide etc..
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911148479.2A CN110912529B (en) | 2014-06-06 | 2015-06-05 | Monolithic filter ladder network and method of manufacturing the same |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/298,100 | 2014-06-06 | ||
| US14/298,057 | 2014-06-06 | ||
| US14/298,057 US9673384B2 (en) | 2014-06-06 | 2014-06-06 | Resonance circuit with a single crystal capacitor dielectric material |
| US14/298,100 US9571061B2 (en) | 2014-06-06 | 2014-06-06 | Integrated circuit configured with two or more single crystal acoustic resonator devices |
| PCT/US2015/034560 WO2015188147A1 (en) | 2014-06-06 | 2015-06-05 | Integrated circuit configured with a crystal acoustic resonator device |
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| CN201911148479.2A Division CN110912529B (en) | 2014-06-06 | 2015-06-05 | Monolithic filter ladder network and method of manufacturing the same |
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| CN201911148479.2A Active CN110912529B (en) | 2014-06-06 | 2015-06-05 | Monolithic filter ladder network and method of manufacturing the same |
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| CN113411064A (en) * | 2020-03-17 | 2021-09-17 | 济南晶正电子科技有限公司 | Film bulk acoustic wave device and preparation method thereof |
| WO2022174519A1 (en) * | 2021-02-20 | 2022-08-25 | 偲百创(深圳)科技有限公司 | Resonant device and acoustic filter |
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| DE112021005011T5 (en) * | 2020-10-23 | 2023-07-27 | Murata Manufacturing Co., Ltd. | ACOUSTIC WAVE COMPONENT |
| WO2022165120A1 (en) * | 2021-01-29 | 2022-08-04 | Murata Manufacturing Co., Ltd. | Acoustic wave device |
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| CN113411064A (en) * | 2020-03-17 | 2021-09-17 | 济南晶正电子科技有限公司 | Film bulk acoustic wave device and preparation method thereof |
| WO2022174519A1 (en) * | 2021-02-20 | 2022-08-25 | 偲百创(深圳)科技有限公司 | Resonant device and acoustic filter |
| WO2024055388A1 (en) * | 2022-09-14 | 2024-03-21 | Huawei Technologies Co., Ltd. | Acoustic resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110912529B (en) | 2023-07-18 |
| KR20220108210A (en) | 2022-08-02 |
| KR102427297B1 (en) | 2022-07-29 |
| KR20170026459A (en) | 2017-03-08 |
| WO2015188147A1 (en) | 2015-12-10 |
| CN110912529A (en) | 2020-03-24 |
| CN106575957B (en) | 2019-12-17 |
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