CN112436815B - Temperature-compensated surface acoustic wave device and method of manufacturing the same - Google Patents
Temperature-compensated surface acoustic wave device and method of manufacturing the same Download PDFInfo
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- CN112436815B CN112436815B CN202011304555.7A CN202011304555A CN112436815B CN 112436815 B CN112436815 B CN 112436815B CN 202011304555 A CN202011304555 A CN 202011304555A CN 112436815 B CN112436815 B CN 112436815B
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000003989 dielectric material Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 102
- 229920002120 photoresistant polymer Polymers 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- JHJNPOSPVGRIAN-SFHVURJKSA-N n-[3-[(1s)-1-[[6-(3,4-dimethoxyphenyl)pyrazin-2-yl]amino]ethyl]phenyl]-5-methylpyridine-3-carboxamide Chemical compound C1=C(OC)C(OC)=CC=C1C1=CN=CC(N[C@@H](C)C=2C=C(NC(=O)C=3C=C(C)C=NC=3)C=CC=2)=N1 JHJNPOSPVGRIAN-SFHVURJKSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The application discloses a temperature-compensated surface acoustic wave device and a method of manufacturing the same. In the manufacturing method of the temperature compensation type surface acoustic wave device, a layer of dielectric material is added on the side walls of two sides of the IDT metal layer through a step-by-step stripping process, so that temperature drift can be restrained. In addition, the IDT metal layer is not required to be ground to be flush with the dielectric layer by adopting a CMP process, so that the process flow can be reduced, and the production cost can be saved. The temperature-compensated surface acoustic wave device is configured to have a special structure in which the cross section of the IDT electrode is formed in a T shape to widen the upper end of the IDT electrode, and can suppress the transverse mode.
Description
Technical Field
The present invention relates to the technical field of surface acoustic wave devices, and more particularly, to a temperature compensated surface acoustic wave device (TC-SAW) and a method for manufacturing the same.
Background
A surface acoustic wave (SAW: surface acoustic wave) device is an electronic device that operates based on the piezoelectric effect of a piezoelectric material and that uses a surface acoustic wave on the surface of the piezoelectric material, and that converts an electric input signal into a surface acoustic wave using an interdigital transducer (IDT: interdigital transducer), a periodic structure of metal electrodes shaped like a double-hand crossover, formed on the surface of the piezoelectric material, is a key element of present-day communication equipment. Surface acoustic wave devices such as surface acoustic wave filters (hereinafter, simply referred to as SAW filters) are widely used in signal receiver front ends, and in diplexers and reception filters. SAW filters have low insertion loss and good rejection performance, and can achieve wide bandwidths and small volumes. Among them, the temperature compensation type surface wave filter (TC-SAW) is not easily affected by temperature change, the performance is more stable, and the application is more extensive.
When the interdigital transducer structure of the existing surface acoustic wave filter is manufactured, a stripping process is generally adopted, namely, negative photoresist is adopted on a substrate to manufacture a pattern through exposure and development, then a metal film is deposited on the pattern, the photoresist is removed by using a solvent which does not attack the metal film, and along with the removal of the photoresist, the metal on the photoresist is stripped, so that a metal structure with a preset pattern is left. The tuning frequency of the SAW filter is mainly adjusted by IDT electrode linewidth, i.e., the higher the frequency is, the smaller the linewidth is. However, due to limitations of the negative photoresist and the stripping process, when the IDT electrode line width is less than 0.5 μm, the exposure and stripping process cannot be basically completed, and the morphology of the electrode is difficult to control, which limits the application of SAW products in the high frequency field.
Patent document 1 discloses an IDT copper process manufacturing method of TC-SAW, which can effectively realize metal patterning and control of IDT metal morphology by combining positive photoresist with dry etching and CMP process, and meet the requirements of IDT electrodes with smaller line width, so that the target frequency is easier to achieve.
Fig. 3 is a process flow chart showing a method for manufacturing IDT copper in the high-frequency SAW according to patent document 1.
Referring to fig. 3a, a piezoelectric material substrate 21 is provided.
Referring to fig. 3b, a dielectric material is deposited on the substrate 21 to form a first dielectric layer 22.
Referring to fig. 3c, a positive photoresist is coated, an IDT pattern is defined after exposure and development, the first dielectric layer 22 is etched by a dry etching process to form a film morphology corresponding to the IDT pattern, and the positive photoresist is removed.
Referring to fig. 3d, deposition of IDT metal layer 23 is performed.
Referring to fig. 3e, the IDT metal layer 23 is polished by a CMP (chemical mechanical polishing) process, and stopped at the first dielectric layer 22, and IDT metal structures 23a separated from each other corresponding to the IDT pattern are formed, so that the thickness of the IDT metal structures 23a is the same as that of the first dielectric layer 22. The main process principle of CMP is that chemical substances react with substances on the surface of a wafer to form new compounds, and then the new compounds are removed by mechanically grinding microparticles in a slurry.
Referring to fig. 3f, a positive photoresist is coated, a lift-off area of the first dielectric layer 22 is defined after exposure and development on the basis of IDT patterns, the lift-off area of the dielectric layer is defined to be a certain distance outside the side wall of the IDT metal structure 23a, dielectric materials in the lift-off area are lifted off by adopting a dry process or a wet process, thereby leaving a remaining layer 22a on the side wall of the metal structure 23a, and then the positive photoresist is removed.
Referring to fig. 3g, the above-described secondary deposition of the dielectric material is performed to form a second dielectric layer 24, and the second dielectric layer 24 covers the surface of the IDT metal structure 23a for frequency adjustment.
Referring to fig. 3h, a connection hole 25 is opened to the second dielectric layer 24 in a predetermined area (e.g., at the top of a portion of the IDT metal structure), thereby forming a final pattern.
Prior art literature
Patent literature
Patent document 1: CN108923763A
Disclosure of Invention
However, in the manufacturing method disclosed in patent document 1, the IDT metal layer needs to be polished to be flush with the first dielectric layer by a CMP (chemical mechanical polishing) process, CMP equipment is expensive, and cracking is easily caused, which has problems of complicated process, high cost, high temperature drift, high transverse wave spurious, and the like.
In view of the above problems, an object of the present invention is to provide a temperature-compensated surface acoustic wave device and a method of manufacturing the same, which can suppress temperature drift, reduce process flow, save production cost, and suppress a lateral mode.
According to a first aspect of the present invention, there is provided a method of manufacturing a temperature-compensated surface acoustic wave device, comprising the steps of:
providing a piezoelectric material substrate;
depositing a dielectric material on the piezoelectric material substrate to form a dielectric layer;
coating a first photoresist on the dielectric layer, exposing and developing the first photoresist to define an IDT pattern, etching the dielectric layer to form a dielectric finger strip structure corresponding to the IDT pattern, and removing the first photoresist;
depositing metal on the etched dielectric layer to form an IDT metal layer, wherein the thickness of the IDT metal layer is larger than that of the dielectric layer;
coating a second photoresist on the IDT metal layer, exposing and developing the second photoresist to define stripping areas of the IDT metal layer and the dielectric layer, wherein the stripping areas are used for forming an IDT metal finger strip structure corresponding to the IDT graph and are defined outside the side walls of the IDT metal finger strip structure;
peeling the IDT metal layer in the peeling region, and then peeling the dielectric layer in the peeling region; and
And removing the second photoresist.
Preferably, the IDT metal layer and the dielectric layer are stripped by a dry etching process.
Preferably, the IDT metal layer is an aluminum layer or a metal film combination layer with a top layer of an aluminum layer.
Preferably, the thickness of the IDT metal layer is 50 to 200nm greater than the thickness of the dielectric layer.
Preferably, the thickness of the dielectric layer is 100-500 nm.
Preferably, the dielectric material comprises SiO 2 。
Preferably, the thickness of the first photoresist is 1 μm to 2 μm.
Preferably, the thickness of the second photoresist is 2 μm to 4 μm.
According to a second aspect of the present invention, there is provided a temperature-compensated surface acoustic wave device comprising:
a piezoelectric material substrate;
an IDT metal finger strip structure which is formed on the piezoelectric material substrate and has a T-shaped section; and
And the dielectric protection layer is formed on the side wall of the IDT metal finger structure.
Preferably, the dielectric material of the dielectric protection layer comprises SiO 2 。
According to the manufacturing method of the temperature compensation type surface acoustic wave device, a layer of dielectric material is added on the side walls of the two sides of the IDT metal layer through a step-by-step stripping process, so that temperature drift can be restrained. In addition, the IDT metal layer is not required to be ground to be flush with the dielectric layer by adopting a CMP process, so that the process flow can be reduced, and the production cost can be saved.
Further, according to the temperature-compensated surface acoustic wave device of the present invention, the cross section of the IDT electrode is formed in a T shape to widen the upper end portion of the IDT electrode, so that the transverse mode can be suppressed.
Drawings
Fig. 1 is a process flow diagram showing a method for manufacturing a temperature-compensated surface acoustic wave device according to an embodiment of the present invention.
Fig. 2 is a block diagram showing a temperature-compensated surface acoustic wave device obtained by the manufacturing method shown in fig. 1.
FIG. 3 is a process flow diagram showing a method for manufacturing IDT copper of a high-frequency SAW in the prior art.
Description of the reference numerals
1. Piezoelectric material substrate
2. Dielectric layer
2a medium finger strip structure
3. First photoresist
4 IDT metal layer
4a IDT metal finger strip structure
5. Second photoresist
2b dielectric protective layer
11. Temperature compensated surface acoustic wave device
Detailed Description
In the following, in order to explain the present invention in more detail, modes for carrying out the present invention will be described with reference to the accompanying drawings.
It should be noted that in the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, such as device structures, materials, dimensions, processing techniques and technologies. The present invention may be embodied in other forms than those described herein, and various changes may be made by those skilled in the art without departing from the spirit of the invention, so that the invention is not limited to the specific embodiments disclosed below.
The process flow of the method for manufacturing a temperature-compensated surface acoustic wave device according to the embodiment of the present invention will be described below with reference to fig. 1. Among them, a temperature-compensated surface wave filter (TC-SAW) is described as an example of a temperature-compensated surface acoustic wave device.
Referring to fig. 1a, a piezoelectric material substrate 1 is provided. The piezoelectric material substrate 1 may be, for example, lithium tantalate, a lithium tantalate wafer, or the like.
Referring to fig. 1b, a dielectric material is deposited on a piezoelectric material substrate 1 to form a dielectric layer 2. Specifically, deposition may be performed by CVD (Chemical Vapor Deposition: chemical vapor deposition)/PVD (Physical Vapour Deposition: physical vapor deposition) or the like. The dielectric material comprises SiO 2 Has the function of inhibiting temperature drift. The thickness of the dielectric layer 2 is in the range of 100-500 nm, for example, preferably 300nm, and can be adjusted according to the design requirements of the product.
Referring to fig. 1c, a first photoresist 3 is coated on the dielectric layer 2. The first photoresist 3 is, for example, a positive photoresist. The thickness of the first photoresist 3 ranges from 1 μm to 2 μm, for example, preferably 1.2 μm, and can be adjusted according to the design requirements of the product.
Referring to fig. 1d, the first photoresist 3 is exposed and developed to define an IDT pattern. The line width of the IDT pattern can be defined according to the actual product requirements, and ranges from 200 to 500nm, for example, preferably 350nm.
Referring to fig. 1e, the dielectric layer 2 is etched to form dielectric finger structures 2a corresponding to the IDT pattern. Specifically, etching may be performed by a dry etching process. The etchant of dry etching is plasma, and is a process of forming volatile substances by utilizing the reaction of the plasma and the surface film or directly bombarding the surface of the film to cause the film to be corroded. And compared with wet etching, the method can realize anisotropic etching, thereby ensuring the fidelity of the transferred fine patterns.
Referring to fig. 1f, the first photoresist 3a remaining after exposure and development is removed.
Referring to fig. 1g, metal is deposited on the etched dielectric layer 2, i.e., the dielectric finger stripe structure 2a, to form an IDT metal layer 4, and the thickness of the IDT metal layer 4 is made larger than the thickness of the dielectric layer 2. The IDT metal layer 4 can be deposited by sputtering, vapor deposition, or the like. The IDT metal layer 4 may be an aluminum layer or a metal film combination layer having an aluminum layer as a top layer, for example, al/Cu, ti/Al/Cu, or the like. The thickness of the IDT metal layer 4 is about 50-200 nm greater than that of the dielectric layer 2, for example, preferably 100nm, so that the thickness of the IDT electrode structure can be precisely controlled and can be adjusted according to the design requirements of the product.
Referring to fig. 1h, a second photoresist 5 is coated on the IDT metal layer 4. The second photoresist 5 is for example a positive photoresist. The thickness of the second photoresist 5 ranges from 2 μm to 4 μm, for example, preferably 3 μm, and can be adjusted according to the design requirements of the product.
Referring to fig. 1i, the second photoresist 5 is exposed and developed to define a stripped region of the IDT metal layer and the dielectric layer. The peeling region is used for forming an IDT metal finger structure corresponding to the IDT graph and is defined outside the side wall of the IDT metal finger structure.
Referring to fig. 1j, the IDT metal layer 4 in the above-described peeling region is peeled off first to form IDT metal finger structures 4a, and then the dielectric layer 2 (finger structure 2 a) in the peeling region is peeled off to form a dielectric protection layer 2b. Through the above-described step-and-peel process, the dielectric protection layer 2b is left on the side wall of the IDT metal finger structure 4 a. The step-and-strip process may be performed, for example, by a dry etching process.
Referring to fig. 1k, the second photoresist 5a remaining after exposure and development is removed, thereby forming a final pattern.
According to the method for manufacturing a temperature-compensated surface acoustic wave device as described above, a dielectric material is added to the side walls on both sides of the IDT metal layer by a step-by-step lift-off process, so that temperature drift can be suppressed.
In addition, since it is not necessary to polish the IDT metal layer to be flush with the dielectric layer by using a CMP process as in patent document 1, the process flow can be reduced and the production cost can be saved.
Next, the structure of the temperature-compensated surface acoustic wave device obtained by the manufacturing method shown in fig. 1 will be described with reference to fig. 2.
According to the manufacturing method shown in fig. 1, since the thickness of the IDT metal layer 4 is greater than the thickness of the dielectric layer 2, and the separation regions of the IDT metal layer and the dielectric layer are defined outside the sidewalls of the IDT metal finger structures, after the IDT metal layer 4 and the dielectric layer 2 are separated in succession by using a step separation process, the dielectric protection layer 2b remains on the sidewalls of the IDT metal finger structures 4a, and at the same time, the IDT metal finger structures 4a are formed into a special structure with widened upper ends, and the cross sections thereof are formed into T shapes.
Specifically, as shown in fig. 2, the temperature-compensated surface acoustic wave device 11 includes: a piezoelectric material substrate 1; an IDT metal finger structure 4a formed on the piezoelectric material substrate 1 and having a T-shaped cross section; and a dielectric protection layer 2b formed on the side wall of the IDT metal finger structure 4 a. Wherein the dielectric material of the dielectric protection layer 2b may comprise SiO 2 。
According to the temperature-compensated surface acoustic wave device 11 of the present invention, the cross section of the IDT metal finger structure 4a (IDT electrode) is formed in a T shape, and a special structure in which the upper end portion of the IDT electrode is widened is realized, so that the transverse mode can be suppressed.
The present invention has been described in detail, but the above embodiments are merely examples of all embodiments, and the present invention is not limited thereto. The present invention can freely combine the embodiments, change any component of the embodiments, or omit any component of the embodiments within the scope of the present invention.
Claims (10)
1. A method of manufacturing a temperature-compensated surface acoustic wave device, comprising the steps of:
providing a piezoelectric material substrate;
depositing a dielectric material on the piezoelectric material substrate to form a dielectric layer;
coating a first photoresist on the dielectric layer, exposing and developing the first photoresist to define an IDT pattern, etching the dielectric layer to form a dielectric finger strip structure corresponding to the IDT pattern, and removing the first photoresist;
depositing metal on the etched dielectric layer to form an IDT metal layer, wherein the thickness of the IDT metal layer is larger than that of the dielectric layer;
coating a second photoresist on the IDT metal layer, exposing and developing the second photoresist to define stripping areas of the IDT metal layer and the dielectric layer, wherein the stripping areas are used for forming an IDT metal finger strip structure corresponding to the IDT graph and are defined outside the side walls of the IDT metal finger strip structure;
peeling the IDT metal layer in the peeling region, and then peeling the dielectric layer in the peeling region; and
And removing the second photoresist.
2. The method for manufacturing a temperature-compensated surface acoustic wave device according to claim 1, wherein,
and stripping the IDT metal layer and the dielectric layer by using a dry etching process.
3. The method for manufacturing a temperature-compensated surface acoustic wave device according to claim 1, wherein,
the IDT metal layer is an aluminum layer or a metal film combination layer with the top layer being an aluminum layer.
4. The method for manufacturing a temperature-compensated surface acoustic wave device according to claim 1, wherein,
the thickness of the IDT metal layer is 50-200 nm larger than that of the dielectric layer.
5. The method for manufacturing a temperature-compensated surface acoustic wave device according to claim 4, wherein,
the thickness of the dielectric layer is 100-500 nm.
6. The method for manufacturing a temperature-compensated surface acoustic wave device according to any one of claims 1 to 5,
the dielectric material comprises SiO 2 。
7. The method for manufacturing a temperature-compensated surface acoustic wave device according to any one of claims 1 to 5,
the thickness of the first photoresist is 1-2 mu m.
8. The method for manufacturing a temperature-compensated surface acoustic wave device according to any one of claims 1 to 5,
the thickness of the second photoresist is 2-4 mu m.
9. A temperature-compensated surface acoustic wave device obtained by the manufacturing method according to any one of claims 1 to 8, comprising:
a piezoelectric material substrate;
an IDT metal finger strip structure which is formed on the piezoelectric material substrate and has a T-shaped section; and
And a dielectric protection layer formed on the side wall except the upper end part of the IDT metal finger structure.
10. The temperature-compensated surface acoustic wave device of claim 9, wherein,
the dielectric material of the dielectric protective layer comprises SiO 2 。
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