CN110739390A - Temperature compensation type surface acoustic wave filter device and manufacturing method thereof - Google Patents
Temperature compensation type surface acoustic wave filter device and manufacturing method thereof Download PDFInfo
- Publication number
- CN110739390A CN110739390A CN201911018833.XA CN201911018833A CN110739390A CN 110739390 A CN110739390 A CN 110739390A CN 201911018833 A CN201911018833 A CN 201911018833A CN 110739390 A CN110739390 A CN 110739390A
- Authority
- CN
- China
- Prior art keywords
- wafer
- piezoelectric
- silicon wafer
- silicon
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention provides temperature compensation type surface acoustic wave filters and a manufacturing method thereof, which can permanently bond a small-sized piezoelectric wafer on a large-sized silicon wafer as a whole, or divide the small-sized piezoelectric wafer into a plurality of piezoelectric crystal grains which are permanently bonded on the large-sized silicon wafer, so that the manufacturing process of the temperature compensation type surface acoustic wave filter based on a silicon substrate can be completed on a large-sized wafer processing machine platform corresponding to the size of the silicon wafer before the rear-stage packaging process (including ball planting, cutting and the like) is carried out, namely, the manufacturing process of the TC-SAW filter is compatible with the processing process of the large-sized wafer, therefore, the problem that equipment is purchased again when a large-sized wafer foundry replaces the TC-SAW filter is avoided, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to temperature compensation type surface acoustic wave filter devices and a manufacturing method thereof.
Background
The TC-SAW (temperature compensation Surface Acoustic Wave) filter based on a Si (silicon) substrate is a technology that bonds a piezoelectric material wafer and a Si wafer with a lower thermal expansion coefficient at , and then processes the SAW filter on the piezoelectric material wafer.
And the preparation process of the current mainstream Si substrate-based TC-SAW filter device is a 4-inch (inch) wafer process because no mature growth technology of 8-inch piezoelectric material exists at present, and the existing growth technology of 6-inch piezoelectric material has the problem of poor in-chip processing .
However, in order to further steps to reduce the cost, the current wafer foundry of MEMS (Micro-Electro-Mechanical System) is gradually replacing 8-inch wafers, obviously, there are gaps between the Si substrate based TC-SAW filter device and the wafer size of the MEMS wafer foundry, and the fabrication of the TC-SAW filter is incompatible with the process of the MEMS wafer foundry, so that if the MEMS wafer foundry intends to fabricate the TC-SAW filter device, the related equipment needs to be re-purchased, which is greatly disadvantageous to the depreciation of the equipment and the reduction of the cost.
Disclosure of Invention
The invention aims to provide temperature compensation type surface acoustic wave filter devices and a manufacturing method thereof, which can make the manufacturing process of the temperature compensation type surface acoustic wave filter devices compatible with the processing process of large-size wafers and reduce the cost.
In order to achieve the above object, the present invention provides a manufacturing method of temperature compensation type surface acoustic wave filter devices, comprising:
providing a piezoelectric wafer and a silicon wafer, wherein the size of the piezoelectric wafer is smaller than that of the silicon wafer;
permanently bonding the piezoelectric wafer to the silicon wafer as a whole, or permanently bonding each piezoelectric crystal grain to the silicon wafer after the piezoelectric wafer is divided into a plurality of piezoelectric crystal grains to form a wafer bonding structure;
forming an interdigital electrode on the top surface of the piezoelectric wafer or each piezoelectric crystal grain in the wafer bonding structure;
and sending the wafer bonding structure with the interdigital electrodes into a back-end packaging process to obtain a plurality of temperature compensation type surface acoustic wave filters through a wafer cutting process.
Optionally, when the wafer bonding structure is formed by permanently bonding the piezoelectric wafer onto the silicon wafer as a whole, before the wafer bonding structure with the interdigital electrodes is sent to a back-end packaging process, edge trimming is performed on the silicon wafer in the wafer bonding structure so that the edge of the silicon wafer is aligned with the edge of the piezoelectric wafer.
Optionally, the step of permanently bonding the piezoelectric wafer as a whole to the silicon wafer comprises:
forming th permanent bonding layer on the surface of the piezoelectric wafer through spin coating or deposition process;
forming a second permanent bonding layer on the surface of the silicon wafer by a spin coating or deposition process;
assembling the piezoelectric wafer onto the silicon wafer such that the th permanent bonding layer and the second permanent bonding layer are in contact and permanently bonded at a such that the piezoelectric wafer as a whole is permanently bonded to the silicon wafer.
Optionally, the step of permanently bonding each piezoelectric die to the silicon wafer comprises:
forming a permanent bonding layer on the surface of the silicon wafer by a spin coating or deposition process;
assembling each of the piezoelectric dies onto the permanent bonding layer such that each of the piezoelectric dies is permanently bonded to the silicon wafer.
Optionally, the step of permanently bonding each piezoelectric die to the silicon wafer comprises:
forming th permanent bonding layers on the surface of the piezoelectric wafer by a spin coating or deposition process before the piezoelectric wafer is divided into a plurality of piezoelectric crystal grains, so that after the piezoelectric wafer is divided into a plurality of piezoelectric crystal grains, the top surface of each piezoelectric crystal grain is covered with th permanent bonding layers;
forming a second permanent bonding layer on the surface of the silicon wafer by a spin coating or deposition process;
assembling each piezoelectric die having the th permanent bonding layer onto the silicon wafer such that the th permanent bonding layer and the second permanent bonding layer are in contact and permanently bonded at , respectively, such that each piezoelectric die is permanently bonded to the silicon wafer.
Optionally, the th permanent bonding layer and the second permanent bonding layer each comprise at least of silicon oxide, silicon nitride, and silicon oxynitride.
Optionally, the step of dividing the piezoelectric wafer into a plurality of piezoelectric dies includes: firstly, a blue film is pasted on the bottom surface of the piezoelectric wafer, then the piezoelectric wafer is cut from the top surface of the piezoelectric wafer to the top surface of the blue film, and then the blue film is removed to obtain a plurality of piezoelectric crystal grains.
Optionally, after permanently bonding each piezoelectric die to the silicon wafer and before forming the interdigital electrodes, an insulating layer is further formed on the silicon wafer, the insulating layer filling gaps between adjacent piezoelectric dies and exposing a surface of the piezoelectric die facing away from the silicon wafer.
Optionally, before forming the interdigital electrode on the top surface of the piezoelectric wafer or each of the piezoelectric dies in the wafer bonding structure, the top surface of the piezoelectric wafer or each of the piezoelectric dies in the wafer bonding structure is thinned and polished.
Optionally, forming an interdigital electrode on the top surface of the piezoelectric wafer or each piezoelectric die in the wafer bonding structure, and simultaneously forming a bonding pad on the top surface of the piezoelectric wafer or each piezoelectric die in the wafer bonding structure; after the wafer bonding structure with the interdigital electrodes is sent to a back-end packaging process, firstly, balls are planted on the bonding pads, and then, the cutting is carried out, so that a plurality of temperature compensation type surface acoustic wave filter devices are obtained.
Based on the same conception, the invention also provides temperature compensation type surface acoustic wave filter devices which are manufactured by the manufacturing method of the temperature compensation type surface acoustic wave filter devices, wherein the temperature compensation type surface acoustic wave filter devices comprise silicon wafer parts and piezoelectric crystal grains, the silicon wafer parts are permanently bonded on points, the piezoelectric crystal grains are located above the silicon wafer parts, and interdigital electrodes are arranged on the top surfaces of the piezoelectric crystal grains.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the method can bond the small-sized piezoelectric wafer on the silicon wafer with the size meeting the size requirement of a large-sized wafer processing machine integrally or divide the small-sized piezoelectric wafer into a plurality of piezoelectric crystal grains which are permanently bonded on the silicon wafer with the size meeting the size requirement of the large-sized wafer processing machine, so that the manufacturing process of the temperature compensation type surface acoustic wave filter based on the silicon substrate can be completed on the corresponding large-sized wafer processing machine before the rear-stage packaging process (including ball planting, cutting and the like) is carried out, namely the manufacturing process of the TC-SAW filter is compatible with the processing process of the large-sized wafer, and therefore, the problem that equipment is purchased again when the large-sized wafer foundry replaces the TC-SAW filter is avoided, and the cost is reduced.
2. Because the piezoelectric wafer or the piezoelectric crystal grains and the silicon wafer which are divided from the piezoelectric wafer are bonded to the wafer in a permanent bonding mode, the bonding is reliable, the problems of peeling and the like cannot occur between the piezoelectric wafer or the piezoelectric crystal grains and the silicon wafer which are divided from the piezoelectric wafer in the subsequent process, and the reliability of the subsequent process can be ensured.
3. When the small-sized piezoelectric wafer is permanently bonded to the silicon wafer with the size meeting the size requirement of the large-sized wafer processing machine platform on the whole, after the manufacturing process of the temperature compensation type surface acoustic wave filter based on the silicon substrate is completed on the large-sized wafer processing machine platform, the edge of the silicon wafer can be cut firstly, so that the edge of the silicon wafer is aligned with the edge of the piezoelectric wafer, the influence of the excessive edge of the silicon wafer on the subsequent packaging process can be reduced, and the difficulty of subsequent packaging is reduced.
Drawings
Fig. 1 is a flowchart of a method of manufacturing a TC-SAW filter device according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a wafer bonded structure in a method of fabricating a TC-SAW filter device in accordance with an embodiment of the invention;
fig. 3A to 3D are schematic sectional views of a manufacturing method of a TC-SAW filter device according to embodiment of the present invention;
fig. 4 is a flowchart of a manufacturing method of a TC-SAW filter device according to a second embodiment of the present invention;
fig. 5 is a schematic top view of a piezoelectric wafer in a manufacturing method of a TC-SAW filter device according to a second embodiment of the present invention;
fig. 6 is a schematic top view of a wafer bonding structure in a method of manufacturing a TC-SAW filter device according to a second embodiment of the present invention;
fig. 7A to 7C are schematic sectional views illustrating a manufacturing method of a TC-SAW filter device according to a second embodiment of the present invention.
Detailed Description
To further clarify the objects, advantages and features of the present invention, a more particular description of the invention briefly described above will be rendered by reference to the appended drawings, which are illustrated in a simplified form and are not to scale, but rather are provided for convenience and clarity in describing particular embodiments of the invention.
Example
Referring to fig. 1, the present embodiment provides a manufacturing method of TC-SAW filters, including the following steps:
s11, providing a piezoelectric wafer and a silicon wafer, wherein the size of the piezoelectric wafer is smaller than that of the silicon wafer;
s12, permanently bonding the piezoelectric wafer to the silicon wafer to form a wafer bonding structure;
s13, forming an interdigital electrode on the top surface of the piezoelectric wafer in the wafer bonding structure;
s14, performing edge removing processing on the silicon wafer in the wafer bonding structure to enable the edge of the silicon wafer to be aligned with the edge of the piezoelectric wafer;
and S15, sending the wafer bonding structure with the interdigital electrodes into a back-end packaging process to obtain a plurality of temperature compensation type surface acoustic wave filter devices through a wafer cutting process.
Referring to fig. 2, in step S11, a 4-inch or 6-inch piezoelectric wafer 10 and an 8-inch or 12-inch silicon wafer 20 may be provided, that is, the size of the piezoelectric wafer 10 is smaller than that of the provided silicon wafer 20, wherein the material of the piezoelectric wafer 10 includes at least of lithium niobate, lithium tantalate, aluminum nitride, barium titanate, lead zirconate titanate and zinc oxide, the piezoelectric wafer 10 is also often referred to as a piezoelectric wafer, the material of the silicon wafer 20 is a silicon wafer, which may be a bulk silicon wafer or a silicon-on-insulator wafer, the silicon wafer 20 is a large-sized wafer relative to the piezoelectric wafer 10, the size of the silicon wafer 20 meets the wafer processing size requirement of a large-sized wafer processing machine, and the size of the piezoelectric wafer 10 is smaller than that of the silicon wafer 20 and does not meet the wafer processing size requirement of the large-sized wafer processing machine.
Referring to fig. 2 and 3A, in step S2, first, a th permanent bonding layer 11 may be formed on the surface of the piezoelectric wafer 10 by a spin coating or deposition (e.g., chemical vapor deposition, atomic layer deposition, etc.) process, and a second permanent bonding layer 21 may be formed on the surface of the silicon wafer 20 by a spin coating or deposition process, where the th permanent bonding layer 11 includes of silicon oxide, silicon nitride, and silicon oxynitride, respectively, and the second permanent bonding layer 21 includes 1 of silicon oxide, silicon nitride, and silicon oxynitride, respectively, where optionally, the second permanent bonding layer 21 and the th permanent bonding layer 11 are made of the same material to reduce the number of materials and enhance the reliability and the permanent property of the subsequent bonding of the second permanent bonding layer 21 and the th permanent bonding layer 11 to silicon wafers, and then, the permanent bonding layer 896 having the th permanent bonding layer 11 on the silicon wafer 10 is bonded to the wafer 20 by a single-wafer bonding stage bonding process, and the bonding layer 21 is etched onto the wafer may be etched on a wafer 99 wafer, so as to avoid the wafer 20, and wafer bonding layer bonding wafer size may be etched by other processes such as mentioned above.
Referring to fig. 3B, in step S13, a metal layer (not shown) is covered on the surface of the wafer bonding structure where the piezoelectric wafer 10 is located, i.e., the metal layer covers at least of the piezoelectric wafer 10 and the back-to-silicon wafer 20 and the surface of the silicon wafer 20 exposed by the piezoelectric wafer 10, by a process such as vacuum evaporation or sputter deposition, on a large-sized wafer processing machine corresponding to the size of the silicon wafer 20, the metal layer is made of a material including at least of tungsten, silver, zirconium, molybdenum, platinum (i.e., platinum), ruthenium, iridium, titanium, tungsten, copper, chromium, hafnium, and aluminum, and then the metal layer (not shown) is patterned by a process of dry etching through photolithography to form the interdigital electrodes 30 and the pads 30 ', the interdigital electrodes 30 and pads 30', the gap between two adjacent pads 30 'is a dicing street, the pads 30' are used for bump bonding with pads 30 on a cover plate in a subsequent packaging process, the pads 30 are formed with periodic patterns of interdigital electrodes 30 such as a pair of comb-shaped electrodes 30, and the interdigital electrodes 30 are formed by a photoresist-etched wafer bonding process, and the photoresist 30, the photoresist 30 is removed by a photoresist process, the photoresist 30 is used to form a wafer bonding pad pattern of a wafer bonding pad 30, the wafer 30 is removed by a wafer bonding process of which is typically used for forming a wafer 30, and the wafer 30, the wafer bonding pad of a wafer 30, the wafer bonding pad 30, the wafer bonding pad of a wafer 30, the wafer 30 is removed by a wafer bonding pad of which is removed by a wafer bonding pad of a wafer 30, and a wafer bonding pad of a wafer 30, and a wafer 30 of a wafer bonding pad of a wafer 30, and a wafer bonding pad of a wafer bonding pad.
Preferably, after the piezoelectric wafer 10 is permanently bonded to the silicon wafer 20 as a whole to form a wafer bonding structure, and before the interdigital electrodes 30 and the bonding pads 30 'are formed, the side of the piezoelectric wafer 10 facing away from the silicon wafer 20 (which may be referred to as the top side or the back side of the piezoelectric wafer 10) in the wafer bonding structure is thinned and polished, the thinned thickness of the piezoelectric wafer 10 is, for example, about 20 μm, , which can ensure that the silicon wafer 20 can perform a temperature compensation effect on the piezoelectric wafer 10, and , which can provide a relatively flat process surface for the formation of the interdigital electrodes 30 and the bonding pads 30'.
Referring to fig. 3B and 3C, in step S14, the edge of the silicon wafer 20 in the wafer bonding structure is trimmed on a wafer processing machine corresponding to the size of the silicon wafer 20, so that the edge of the silicon wafer 20 is aligned with the edge of the piezoelectric wafer 10. The edge of the silicon wafer 20 exposed by the piezoelectric wafer 10 may be removed by edge cutting (i.e., cutting the silicon wafer 20 along the dotted line in fig. 3B) or edge etching.
Referring to fig. 3C and 3D, in step S15, the trimmed wafer bonding structure is sent to a subsequent packaging process, and a wafer processing machine corresponding to the size of the silicon wafer 20 is used to perform corresponding processing, such as ball mounting on the bonding pad 30', wafer dicing on the wafer bonding structure, and so on, so as to obtain a plurality of corresponding temperature compensation surface acoustic wave filters. After the ball is planted on each bonding pad 30', a corresponding solder ball 31 is formed, and the solder ball 31 may be a tin solder ball, a lead solder ball, a tin-lead solder ball, a silver solder ball, a tin-silver-copper solder ball or a copper column.
Based on the same conception, the embodiment also provides TC-SAW filters which are manufactured by the manufacturing method of the TC-SAW filter, the temperature compensation type surface acoustic wave filter comprises a silicon wafer 20 part permanently bonded at and a piezoelectric crystal grain (namely a piezoelectric wafer 10 part cut from the wafer), the piezoelectric crystal grain is positioned above the silicon wafer 20 part, wherein the interdigital electrode 30 and a bonding pad 30 'are arranged on the top surface of the piezoelectric crystal grain, and a solder ball 31 is arranged on the bonding pad 30'.
According to the TC-SAW filter and the manufacturing method thereof, the small-sized piezoelectric wafer can be permanently bonded to the silicon wafer of which the size meets the size requirement of the large-sized wafer processing machine on the whole, so that the manufacturing process of the temperature compensation type surface acoustic wave filter based on the silicon substrate can be completed on the corresponding large-sized wafer processing machine before the rear-stage packaging process (including ball planting, cutting and the like) is carried out, namely the manufacturing process of the TC-SAW filter is compatible with the processing process of the large-sized wafer, therefore, the problem that equipment is purchased again when the large-sized wafer is used for replacing the TC-SAW filter by a factory is avoided, and the cost is reduced.
Example two
Referring to fig. 4, the present embodiment provides a manufacturing method of TC-SAW filters, including the following steps:
s21, providing a piezoelectric wafer and a silicon wafer, wherein the size of the piezoelectric wafer is smaller than that of the silicon wafer;
s22, after the piezoelectric wafer is divided into a plurality of piezoelectric crystal grains, permanently bonding each piezoelectric crystal grain to the silicon wafer to form a wafer bonding structure;
s23, forming an interdigital electrode on the top surface of each piezoelectric crystal grain in the wafer bonding structure;
and S24, sending the wafer bonding structure with the interdigital electrodes into a back-end packaging process to obtain a plurality of temperature compensation type surface acoustic wave filter devices through a wafer cutting process.
Referring to fig. 5 and 7A, in step S21, at least piezoelectric wafers 10 of 4 inches or 6 inches and silicon wafers 20 of 8 inches or 12 inches may be provided, that is, each piezoelectric wafer 10 is provided with a size smaller than that of the provided silicon wafer 20, wherein the material of the piezoelectric wafer 10 includes at least of lithium niobate, lithium tantalate, aluminum nitride, barium titanate, lead zirconate titanate and zinc oxide, the piezoelectric wafer 10 is also often referred to as a piezoelectric wafer, the material of the silicon wafer 20 is a silicon wafer, which may be a bulk silicon wafer or a silicon-on-insulator wafer, the silicon wafer 20 is a large-sized wafer relative to the piezoelectric wafer 10, the size of the silicon wafer 20 meets the wafer processing size requirement of a large-sized wafer processing machine, the size of the piezoelectric wafer 10 is smaller than that of the silicon wafer 20, and does not meet the wafer processing size requirement of the large-sized wafer processing machine.
In step S22, referring to fig. 5 and 6, the piezoelectric wafer 10 may be divided into a plurality of piezoelectric crystal grains 10a by a dicing process, the size and shape of the piezoelectric crystal grains 10a are substantially the same, the dicing process specifically includes attaching a blue film (not shown) on a bottom surface of the piezoelectric wafer 10 to a top surface of the blue film, then cutting the piezoelectric wafer 10 from the top surface of the piezoelectric wafer 10 to obtain a plurality of piezoelectric crystal grains 10a, wherein the blue film may better fix the piezoelectric wafer 10, and hold the cut piezoelectric crystal grains 10a, preventing the cut piezoelectric crystal grains 10a from flying out of the platen, facilitating the protection and collection of the piezoelectric crystal grains 10a, after the dicing process of forming a permanent insulating layer 22 on a surface of the silicon wafer 20 (e.g. a vapor deposition silicon device, an oxidation furnace, a coating film division process, etc.) by a corresponding film forming process, such as vapor deposition, or plasma deposition, and plasma deposition process, and wafer bonding, the wafer 20 may be further manufactured by a chemical vapor deposition process, wherein the bonding process, the wafer 10a wafer 10 is aligned with a wafer 10 is formed with a wafer 10 is aligned, a wafer 10, wafer 10 is aligned to a wafer 10, wafer 10 is aligned, a wafer 10, wafer 10 is not shown in a wafer 10, a wafer 10 is not shown, a wafer 10 is bonded, a wafer 10 is not shown, a wafer 10 is bonded, a wafer 10 is not shown, a wafer 10 is not shown, a wafer 10 is bonded, a wafer 10 is not shown, a wafer 10 is not shown, a wafer 10 is bonded, a wafer 12, or a wafer 10 is not shown, a wafer 10, or a wafer 12 is bonded, a wafer 10 is not shown, a wafer 12 is not shown, a wafer 10 is not shown, a wafer is not shown, or a wafer 10, or a wafer bonded, and a wafer bonded, a wafer is bonded, or a wafer 10, a wafer bonded, a wafer is bonded, a wafer is not shown, and a wafer is not shown, and is not shown, or a wafer is not shown, and is not shown, or a wafer is not shown, and is not shown, a wafer is not shown, and is not shown, and not shown, is not shown, and not shown, wherein the wafer is not shown, wherein the wafer is not shown, wherein the size is not shown, wherein the wafer is not shown, wherein the size is not shown, wherein the wafer is not shown, wherein the size is not shown, wherein the.
Referring to fig. 7B, in step S23, a metal layer (not shown) is covered on the surface of the wafer bonding structure where the piezoelectric crystal grains 10a and the insulating layer 13 are located by vacuum evaporation or sputter deposition on a large-sized wafer processing machine corresponding to the size of the silicon wafer 20, wherein the metal layer is made of at least materials selected from tungsten, silver, zirconium, molybdenum, platinum (i.e., platinum), ruthenium, iridium, titanium, tungsten, copper, chromium, hafnium and aluminum, and then the metal layer (not shown) is patterned by a process of photolithography combined with dry etching to form the interdigital electrode 30 and the pad 30 ', a gap between two adjacent pads 30 ' exposes the surface of the insulating layer 13 in a scribe line, and the pad 30 ' is used for bonding with a pad on a cover plate in a subsequent packaging process.
Preferably, after each of the piezoelectric crystal grains 10a is permanently bonded to the silicon wafer 20 to form a wafer bonding structure, and before the interdigital electrode 30 and the bonding pad 30 'are formed, the side of each of the piezoelectric crystal grains 10a in the wafer bonding structure, which faces away from the silicon wafer 20 (which may be referred to as the top side or the back side of the piezoelectric crystal grain 10 a), is thinned and polished, the thinned thickness of each of the piezoelectric crystal grains 10a is, for example, about 20 μm, can ensure that the silicon wafer 20 can have a temperature compensation effect on each of the piezoelectric crystal grains 10a, and in addition, , a relatively flat process surface can be provided for the formation of the interdigital electrode 30 and the bonding pad 30'.
Referring to fig. 7B, in step S24, the wafer bonding structure with the interdigital electrodes 30 and the bonding pads 30 'is sent to a subsequent packaging process, and a wafer processing machine corresponding to the size of the silicon wafer 20 is correspondingly processed to plant balls on the bonding pads 30', and the wafer bonding structure is wafer-diced along the gaps (i.e., dicing streets) between the corresponding piezoelectric crystal grains 10a, so as to obtain a plurality of corresponding temperature-compensated surface acoustic wave filters. After the ball is planted on each bonding pad 30', a corresponding solder ball 31 is formed, and the solder ball 31 may be a tin solder ball, a lead solder ball, a tin-lead solder ball, a silver solder ball, a tin-silver-copper solder ball or a copper column.
Based on the same inventive concept, the embodiment also provides TC-SAW filters which are manufactured by adopting the manufacturing method of the TC-SAW filter, the temperature compensation type surface acoustic wave filter comprises a silicon wafer 20 part permanently bonded at and a piezoelectric crystal grain 10a, the piezoelectric crystal grain 10a is positioned above the silicon wafer 20 part, wherein the top surface of the piezoelectric crystal grain 10a is provided with an interdigital electrode 30 and a bonding pad 30 ', and a solder ball 31 is arranged on the bonding pad 30'.
The TC-SAW filter and the manufacturing method thereof according to the present embodiment can divide a small-sized piezoelectric wafer into a plurality of piezoelectric crystal grains, and then permanently bond the piezoelectric crystal grains to a large-sized silicon wafer, so that before entering a back-end packaging process (including ball-planting, dicing, and the like), a manufacturing process of a temperature compensation type surface acoustic wave filter based on a silicon substrate can be completed on a large-sized wafer processing machine corresponding to the size of the silicon wafer, that is, the manufacturing process of the TC-SAW filter is compatible with the processing process of the large-sized wafer, thereby avoiding a problem of equipment re-purchase when a large-sized wafer foundry replaces the TC-SAW filter, and reducing cost.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1, methods for manufacturing a temperature compensation type surface acoustic wave filter device, comprising:
providing a piezoelectric wafer and a silicon wafer, wherein the size of the piezoelectric wafer is smaller than that of the silicon wafer;
permanently bonding the piezoelectric wafer to the silicon wafer as a whole, or permanently bonding each piezoelectric crystal grain to the silicon wafer after the piezoelectric wafer is divided into a plurality of piezoelectric crystal grains to form a wafer bonding structure;
forming an interdigital electrode on the top surface of the piezoelectric wafer or each piezoelectric crystal grain in the wafer bonding structure;
and sending the wafer bonding structure with the interdigital electrodes into a back-end packaging process to obtain a plurality of temperature compensation type surface acoustic wave filters through a wafer cutting process.
2. The manufacturing method according to claim 1, wherein when the wafer bonding structure is formed by permanently bonding the piezoelectric wafer as a whole to the silicon wafer, before the wafer bonding structure formed with the interdigital electrodes is subjected to a back-end packaging process, an edge removing process is performed on the silicon wafer in the wafer bonding structure so that an edge of the silicon wafer is aligned with an edge of the piezoelectric wafer.
3. The method of manufacturing of claim 1, wherein permanently bonding the piezoelectric wafer as a whole to the silicon wafer comprises:
forming th permanent bonding layer on the surface of the piezoelectric wafer through spin coating or deposition process;
forming a second permanent bonding layer on the surface of the silicon wafer by a spin coating or deposition process;
assembling the piezoelectric wafer onto the silicon wafer such that the th permanent bonding layer and the second permanent bonding layer are in contact and permanently bonded at a such that the piezoelectric wafer as a whole is permanently bonded to the silicon wafer.
4. The method of manufacturing of claim 1, wherein the step of permanently bonding each piezoelectric die to the silicon wafer comprises:
forming a permanent bonding layer on the surface of the silicon wafer by a spin coating or deposition process;
assembling each of said piezoelectric dies onto said permanent bonding layer such that each of said piezoelectric dies is permanently bonded to said silicon wafer;
alternatively, the step of permanently bonding each piezoelectric grain to the silicon wafer comprises:
forming th permanent bonding layers on the surface of the piezoelectric wafer by a spin coating or deposition process before the piezoelectric wafer is divided into a plurality of piezoelectric crystal grains, so that after the piezoelectric wafer is divided into a plurality of piezoelectric crystal grains, the top surface of each piezoelectric crystal grain is covered with th permanent bonding layers;
forming a second permanent bonding layer on the surface of the silicon wafer by a spin coating or deposition process;
assembling each piezoelectric die having the th permanent bonding layer onto the silicon wafer such that the th permanent bonding layer and the second permanent bonding layer are in contact and permanently bonded at , respectively, such that each piezoelectric die is permanently bonded to the silicon wafer.
5. The method of manufacturing of claim 3 or 4, wherein the th permanent bonding layer and the second permanent bonding layer are each comprised of at least of silicon oxide, silicon nitride, and silicon oxynitride.
6. The manufacturing method according to claim 1, wherein the step of dividing the piezoelectric wafer into a plurality of piezoelectric crystal grains comprises: firstly, a blue film is pasted on the bottom surface of the piezoelectric wafer, then the piezoelectric wafer is cut from the top surface of the piezoelectric wafer to the top surface of the blue film, and then the blue film is removed to obtain a plurality of piezoelectric crystal grains.
7. The manufacturing method according to claim 1 or 4, wherein after the individual piezoelectric crystal grains are permanently bonded to the silicon wafer and before the interdigital electrodes are formed, an insulating layer is further formed on the silicon wafer, the insulating layer filling gaps between adjacent piezoelectric crystal grains and exposing a surface of the piezoelectric crystal grains facing away from the silicon wafer.
8. The method of manufacturing of claim 1, wherein the top surface of the or each piezoelectric die in the wafer bonded structure is thinned and polished prior to forming the interdigitated electrodes on the top surface of the or each piezoelectric wafer in the wafer bonded structure.
9. The method of manufacturing according to claim 1, wherein an interdigital electrode is formed on a top surface of the or each piezoelectric wafer in the wafer bonding structure, and a bonding pad is also formed on a top surface of the or each piezoelectric wafer in the wafer bonding structure; after the wafer bonding structure with the interdigital electrodes is sent to a back-end packaging process, firstly, balls are planted on the bonding pads, and then, the cutting is carried out, so that a plurality of temperature compensation type surface acoustic wave filter devices are obtained.
10, temperature compensated surface acoustic wave filter device, characterized in that, it is manufactured by the method of manufacturing temperature compensated surface acoustic wave filter device of any of claims 1-9, the temperature compensated surface acoustic wave filter device includes a silicon wafer portion permanently bonded at and a piezoelectric crystal grain, the piezoelectric crystal grain is located above the silicon wafer portion, wherein, the top surface of the piezoelectric crystal grain is provided with interdigital electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911018833.XA CN110739390B (en) | 2019-10-24 | 2019-10-24 | Temperature compensation type surface acoustic wave filter device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911018833.XA CN110739390B (en) | 2019-10-24 | 2019-10-24 | Temperature compensation type surface acoustic wave filter device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110739390A true CN110739390A (en) | 2020-01-31 |
| CN110739390B CN110739390B (en) | 2022-08-26 |
Family
ID=69271271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911018833.XA Active CN110739390B (en) | 2019-10-24 | 2019-10-24 | Temperature compensation type surface acoustic wave filter device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110739390B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112311466A (en) * | 2020-11-11 | 2021-02-02 | 中国科学院上海微系统与信息技术研究所 | Integrated optical transceiver |
| CN112436815A (en) * | 2020-11-19 | 2021-03-02 | 广东广纳芯科技有限公司 | Temperature compensation type surface acoustic wave device and manufacturing method thereof |
| CN112448687A (en) * | 2020-11-23 | 2021-03-05 | 广东广纳芯科技有限公司 | TC-SAW filter manufacturing method |
| CN112951713A (en) * | 2021-02-07 | 2021-06-11 | 长春长光圆辰微电子技术有限公司 | Processing method of small-size wafer |
| CN113270539A (en) * | 2021-04-08 | 2021-08-17 | 偲百创(深圳)科技有限公司 | Method for preparing piezoelectric transducer |
| CN114157258A (en) * | 2022-02-09 | 2022-03-08 | 深圳新声半导体有限公司 | Wafer-level packaging structure of temperature compensation type surface acoustic wave filter and manufacturing method |
| CN115831772A (en) * | 2023-02-23 | 2023-03-21 | 江苏元核芯技术有限责任公司 | Semiconductor packaging structure and packaging method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496596A (en) * | 2011-12-27 | 2012-06-13 | 复旦大学 | Wafer bearing structure and preparation method thereof, and wafer thinning method |
| JP2013166290A (en) * | 2012-02-15 | 2013-08-29 | Seiko Epson Corp | Processing method and method for manufacturing liquid droplet ejection head |
| JP2015050761A (en) * | 2013-09-05 | 2015-03-16 | 日本電波工業株式会社 | Piezoelectric vibration piece, piezoelectric device, method for manufacturing piezoelectric vibration piece, and method for manufacturing piezoelectric device |
| CN105612605A (en) * | 2013-09-11 | 2016-05-25 | 信越半导体株式会社 | Production method for mirror polished wafers |
| CN105978520A (en) * | 2016-05-12 | 2016-09-28 | 电子科技大学 | SAW device of multilayer structure and preparation method of SAW device |
| CN105984837A (en) * | 2015-02-17 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Wafer of stack structure and thinning method thereof |
| CN108365083A (en) * | 2018-02-07 | 2018-08-03 | 济南晶正电子科技有限公司 | The manufacturing method of composite piezoelectric substrate for SAW device |
-
2019
- 2019-10-24 CN CN201911018833.XA patent/CN110739390B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496596A (en) * | 2011-12-27 | 2012-06-13 | 复旦大学 | Wafer bearing structure and preparation method thereof, and wafer thinning method |
| JP2013166290A (en) * | 2012-02-15 | 2013-08-29 | Seiko Epson Corp | Processing method and method for manufacturing liquid droplet ejection head |
| JP2015050761A (en) * | 2013-09-05 | 2015-03-16 | 日本電波工業株式会社 | Piezoelectric vibration piece, piezoelectric device, method for manufacturing piezoelectric vibration piece, and method for manufacturing piezoelectric device |
| CN105612605A (en) * | 2013-09-11 | 2016-05-25 | 信越半导体株式会社 | Production method for mirror polished wafers |
| CN105984837A (en) * | 2015-02-17 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Wafer of stack structure and thinning method thereof |
| CN105978520A (en) * | 2016-05-12 | 2016-09-28 | 电子科技大学 | SAW device of multilayer structure and preparation method of SAW device |
| CN108365083A (en) * | 2018-02-07 | 2018-08-03 | 济南晶正电子科技有限公司 | The manufacturing method of composite piezoelectric substrate for SAW device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112311466A (en) * | 2020-11-11 | 2021-02-02 | 中国科学院上海微系统与信息技术研究所 | Integrated optical transceiver |
| CN112436815A (en) * | 2020-11-19 | 2021-03-02 | 广东广纳芯科技有限公司 | Temperature compensation type surface acoustic wave device and manufacturing method thereof |
| CN112436815B (en) * | 2020-11-19 | 2024-03-15 | 广东广纳芯科技有限公司 | Temperature-compensated surface acoustic wave device and method of manufacturing the same |
| CN112448687A (en) * | 2020-11-23 | 2021-03-05 | 广东广纳芯科技有限公司 | TC-SAW filter manufacturing method |
| CN112448687B (en) * | 2020-11-23 | 2024-05-03 | 广东广纳芯科技有限公司 | TC-SAW filter manufacturing method |
| CN112951713A (en) * | 2021-02-07 | 2021-06-11 | 长春长光圆辰微电子技术有限公司 | Processing method of small-size wafer |
| CN113270539A (en) * | 2021-04-08 | 2021-08-17 | 偲百创(深圳)科技有限公司 | Method for preparing piezoelectric transducer |
| CN114157258A (en) * | 2022-02-09 | 2022-03-08 | 深圳新声半导体有限公司 | Wafer-level packaging structure of temperature compensation type surface acoustic wave filter and manufacturing method |
| CN114157258B (en) * | 2022-02-09 | 2022-04-15 | 深圳新声半导体有限公司 | Wafer-level packaging structure of temperature compensation type surface acoustic wave filter and manufacturing method |
| CN115831772A (en) * | 2023-02-23 | 2023-03-21 | 江苏元核芯技术有限责任公司 | Semiconductor packaging structure and packaging method |
| CN115831772B (en) * | 2023-02-23 | 2023-05-26 | 江苏元核芯技术有限责任公司 | Semiconductor packaging structure and packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110739390B (en) | 2022-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110739390A (en) | Temperature compensation type surface acoustic wave filter device and manufacturing method thereof | |
| CN111130483B (en) | Method of manufacturing a novel electronic component package | |
| CN111130485B (en) | Method for packaging electronic components in a package having an organic back end | |
| CN111130496B (en) | Package with organic back end for electronic assembly | |
| JP4638530B2 (en) | Piezoelectric component and manufacturing method thereof | |
| CN110739391B (en) | Surface acoustic wave filter device and method of manufacturing the same | |
| CN111130484B (en) | Encapsulated electronic assembly | |
| JP4311376B2 (en) | Semiconductor device, semiconductor device manufacturing method, electronic component, circuit board, and electronic apparatus | |
| US7595220B2 (en) | Image sensor package and fabrication method thereof | |
| US20080283944A1 (en) | PHOTOSTRUCTURABLE GLASS MICROELECTROMECHANICAL (MEMs) DEVICES AND METHODS OF MANUFACTURE | |
| JP2006109400A (en) | Electronic component, circuit board, electronic apparatus, and method for manufacturing the electronic component | |
| US10262959B2 (en) | Semiconductor devices and methods of forming thereof | |
| CN112039464B (en) | Packaging module and packaging method of BAW resonator | |
| US9065420B2 (en) | Fabrication method of acoustic wave device | |
| CN114337585B (en) | Single crystal film bulk acoustic resonator, preparation method thereof and filter | |
| JP5170282B2 (en) | Manufacturing method of electronic parts | |
| CN117277985A (en) | Bulk acoustic wave resonator and method of manufacturing the same | |
| US20230080099A1 (en) | Surface acoustic wave filter wafer-level packaging structure and method | |
| CN114512474A (en) | Wafer-level packaging method for passive device stacked filter | |
| CN113131890A (en) | Manufacturing method of packaging structure | |
| JP2021027383A (en) | Elastic wave device | |
| US20230317753A1 (en) | Methods Of Forming Optical Modules | |
| US20230091476A1 (en) | Bulk acoustic wave resonator with metal bonding layer | |
| JP7328443B2 (en) | SENSOR ELEMENT AND METHOD FOR MANUFACTURING SENSOR ELEMENT | |
| US20220199892A1 (en) | Piezoelectric vibrator and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518 Shaoxing Road, Zhejiang Province Applicant after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Address before: 518 Shaoxing Road, Zhejiang Province Applicant before: SMIC manufacturing (Shaoxing) Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220714 Address after: 312000 No. 508, Linjiang Road, Gaobu Town, Yuecheng District, Shaoxing City, Zhejiang Province Applicant after: SMIC Yuezhou integrated circuit manufacturing (Shaoxing) Co.,Ltd. Address before: 518 Shaoxing Road, Zhejiang Province Applicant before: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |