CN102496596A - Wafer bearing structure and preparation method thereof, and wafer thinning method - Google Patents
Wafer bearing structure and preparation method thereof, and wafer thinning method Download PDFInfo
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- CN102496596A CN102496596A CN2011104457991A CN201110445799A CN102496596A CN 102496596 A CN102496596 A CN 102496596A CN 2011104457991 A CN2011104457991 A CN 2011104457991A CN 201110445799 A CN201110445799 A CN 201110445799A CN 102496596 A CN102496596 A CN 102496596A
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Abstract
The invention discloses a wafer bearing structure. The structure comprises: a pallet and a bearing tray fixed on the pallet. A wafer to be processed is fixed on the bearing tray. A requirement to surface smoothness of the pallet is reduced. The pallet is protected to not be damaged during a wafer processing process. Repeatable utilization can be achieved and cost can be saved. Simultaneously, the invention also discloses a preparation method of the wafer bearing structure. The method is characterized by: placing a polymer monomer or a precuring object of the polymer monomer in a cylindrical hollow moldm, heating and curing; directly forming the bearing tray on the pallet or fixing the bearing tray on the pallet through bonding after the bearing tray is formed. The method is simple and convenient. And the invention also provides a wafer thinning method. According to the wafer thinning method, the above wafer bearing structure is used to bear the wafer in the wafer processing technology. The wafer thinning method is convenient and reliable and is completely compatible with the current wafer thinning and through silicon via processing technology.
Description
Technical field
The present invention relates to the semiconductor packaging field, relate in particular to a kind of wafer carrying structure and preparation method thereof and wafer thining method.
Background technology
Along with the raising of silicon integrated level, size of semiconductor device is more and more littler, and when the characteristic line breadth of silicon integrated circuit gets into nanoscale (below 50 nanometers), silicon microelectric technique will receive from the restriction of physics aspect and challenge.Therefore, the miniaturization and the microminiaturization that come further to realize electronic system through encapsulation technology just become most important.
In the encapsulation technology field, the integrated level that improves electronic system through three peacekeeping system in package has become the developing direction of miniaturization of electronic products and multifunction.Wherein, (Through Silicon Via TSV) realizes that the three-dimensional chip stacked package and the system integration become the focus that industry is paid close attention to owing to having various advantages to utilize the interconnecting silicon through holes technology.
3D TSV is through between chip and the chip, make vertical conducting between wafer and the wafer, realizes the state-of-the-art technology that interconnects between the chip.Different with the superimposing technique of using salient point with the bonding of IC encapsulation in the past, TSV can make chip maximum in the density that three-dimensional piles up, and overall dimension is minimum, improves the performance of chip speed and low-power consumption greatly.It also be called as after lead-in wire bonding (Wire Bonding), carrier band weld (TAB) and flip-chip (FC) automatically the 4th generation package interconnect technological.The main advantage of 3D TSV encapsulation is:
1) the TSV technology replaces long 2D interconnection with short perpendicular interconnection, and interconnection length is little, and resistance is low, has reduced ghost effect and power consumption, has promoted the electric property of device;
2) the TSV technology makes the wiring of in chip stack structure, having omitted chip edge, thereby has improved packaging density, reduces product size;
3) compare with traditional Wire Bonding Technology etc., the TSV technology has higher reliability.
In the TSV technology, one of critical process is the attenuate to Silicon Wafer.Along with the size of wafer is increasing, very easily cause silicon wafer warpage in the thinning process.
In order to solve the warpage issues in the wafer thinning process, traditional measure is that the wafer that needs attenuate is adhered on another piece wafer carrying structure, after accomplishing attenuate and subsequent technique process, wafer is taken off again; Wherein, said wafer carrying structure is generally silicon chip or glass etc.
Through above-mentioned measure, solved the clamping problem of large scale wafer attenuate processing, but still had following shortcoming:
1) surface smoothness to the wafer carrying structure has proposed very high requirement, thereby has promoted the processing cost of wafer carrying structure;
2) because technologies such as via etch make the wafer carrying structural damage possibly even scrap, make that the wafer carrying structure can not be repeated to utilize, therefore above-mentioned technology can't compatible TSV manufacturing process.
In order to address the above problem; The people such as J.Charbonnier of France propose a kind of improvement project (J.Charbonnier, et al, " Integration of a Temporary Carrier in a TSV Process Flow "; Proceedings of 59th Electronic Components and Technology Conference; 2009, pp.865-871), between wafer carrying structure and wafer to be processed, adopt the thicker glue of one deck to realize protection to the wafer carrying structure; Make via etch process only hurt glue-line, thereby realize the recycle of wafer carrying structure.
Yet said method still exists following problem and shortcoming:
1) do not have to solve to the high problem of wafer carrying body structure surface evenness requirement, and the surface smoothness of glue is wayward;
2) thick glued membrane very easily deforms at high-temperature technology, thereby produces warpage;
3) thick glued membrane is difficult for removing fully, possibly have residual, thereby the wafer carrying structure is exerted an influence in follow-up recycle.
Therefore, be necessary existing wafer carrying structure is improved.
Summary of the invention
The object of the present invention is to provide a kind of wafer carrying structure and preparation method thereof and wafer thining method, to solve the problem that existing wafer carrying structure can not satisfy the TSV technological requirement.
For addressing the above problem, the present invention proposes a kind of wafer carrying structure, is used to carry wafer, comprising:
Pallet is the disk shape, and its diameter is not less than the diameter of said wafer, and its Young's modulus is not less than 6Gpa, and mechanical tolerable temperature scope is 350 ℃ and following.
Carrier is the disk shape, is fixed on the said pallet; Wherein said wafer is fixed on the said carrier; The diameter of said carrier and the equal diameters of said wafer; Said carrier is made up of polymer, and its mechanical tolerable temperature scope is 350 ℃ and following, and the scope of Young's modulus is 2～25Gpa.
Optional, the matrix resin of said polymer is any in polyimides, benzoxazine, the benzocyclobutene.
Optional, be added with inorganic filler particle in the said polymer.
Optional, the thickness of said carrier is 10～15mm.
Optional, said pallet is silicon chip or sheet glass or sheet metal.
Simultaneously, for addressing the above problem, the present invention also proposes a kind of preparation method of above-mentioned wafer carrying structure, comprises the steps:
Prepare said pallet, and its surface is cleaned;
One cylindrical, hollow mould is fixed on the surface of said pallet, the internal diameter of said cylindrical, hollow mould and the equal diameters of said wafer;
In said cylindrical, hollow mould, put into the polymer monomer that constitutes by said polymer or the precuring thing of said polymer monomer, and be heating and curing, form said carrier;
Remove said cylindrical, hollow mould, obtain said wafer carrying structure.
Optional, the height of said cylindrical, hollow mould is 10～15mm.
Simultaneously, the preparation method of above-mentioned wafer carrying structure can also realize through following steps:
Prepare said pallet, and its surface is cleaned;
Prepare said carrier;
Said carrier is adhered on the said pallet, form said wafer carrying structure.
Optional, the said carrier of said preparation comprises the steps:
Prepare a cylindrical, hollow mould, the internal diameter of said cylindrical, hollow mould and the equal diameters of said wafer;
In said cylindrical, hollow mould, put into the polymer monomer that constitutes by polymer or the precuring thing of said polymer monomer, and be heating and curing, form said carrier.
Optional, the height of said cylindrical, hollow mould is 10～15mm.
And the present invention also proposes a kind of wafer thining method, comprises the steps:
(1) utilize the preparation method of above-mentioned wafer carrying structure to prepare said wafer carrying structure;
(2) planarization and polishing are carried out in the surface of the carrier in the said wafer carrying structure;
(3) wafer that will treat attenuate processing adheres to the surface of the carrier after the said polishing;
(4) said wafer is carried out attenuate and TSV technology;
(5) wafer of said wafer carrying structure after the said processing removed;
(6) said carrier surface is cleaned, when the thickness of carrier after the cleaning during more than or equal to 1mm, repeating step (2) is to (5);
When (7) thickness of the carrier after cleaning is less than 1mm, remove said remaining carrier, and repeating step (1) is to (6).
The present invention makes it compared with prior art owing to adopted above technical scheme, has following advantage and good effect:
1) wafer carrying structure provided by the invention directly links to each other with wafer to be processed through carrier; Thereby the requirement of the surface smoothness of pallet reduced; Even can adopt common materials such as glass or metal to substitute silicon chip, thereby greatly reduce cost as material pallet;
2) owing to wafer carrying structure provided by the invention, its pallet is provided with the consumable carrier that is made up of polymer, thereby can protect pallet, makes pallet can be recycled, and has further reduced cost;
3) because said carrier is can be consumptive, therefore when wafer is carried out various processing technology, need not worry damage that carrier is caused, thus can be compatible mutually with existing TSV manufacture craft; And, only need to use the back process promptly to can be recycled, thereby also practiced thrift operation its surface each because said carrier has certain thickness;
4) in wafer attenuate and follow-up TSV manufacture craft, said pallet links to each other with the anchor clamps of technology board, thereby can be compatible mutually with existing board.
Description of drawings
The profile of the wafer carrying structure that Fig. 1 provides for the embodiment of the invention;
Preparation method's flow chart of the wafer carrying structure that Fig. 2 provides for first embodiment of the invention;
Fig. 3 A to Fig. 3 D is the profile of the corresponding wafer carrying structure of each step of preparation method of the wafer carrying structure that provides of first embodiment of the invention;
The flow chart of the wafer thining method that Fig. 4 provides for the embodiment of the invention;
Fig. 5 A to Fig. 5 D is the corresponding section of structure of each step of wafer thining method that the embodiment of the invention provides.
Embodiment
Wafer carrying structure that the present invention is proposed below in conjunction with accompanying drawing and specific embodiment and preparation method thereof and wafer thining method are done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing adopts the form of simplifying very much and all uses non-ratio accurately, only is used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is; A kind of wafer carrying structure is provided, comprises pallet and be fixed on the carrier on the pallet, wafer to be processed is fixed on the said carrier; Thereby the surface smoothness to said pallet requires to reduce; And protect said pallet in wafer fabrication processes, not to be damaged, and it can be reused, practiced thrift cost; Simultaneously; A kind of preparation method of wafer carrying structure also is provided; This method is through putting into a cylindrical, hollow mould with the precuring thing of polymer monomer or polymer monomer; And be heating and curing, directly after forming carrier on the said pallet or forming carrier through being adhesively fixed on the said pallet, simple and convenient; Simultaneously, a kind of wafer thining method is provided also, this method utilizes above-mentioned wafer carrying structure in the wafer processing technology, to carry wafer, and is convenient and reliable, and compatible fully with existing wafer attenuate and TSV processing technology.
Please refer to Fig. 1, the profile of the wafer carrying structure that Fig. 1 provides for the embodiment of the invention, as shown in Figure 1, the wafer carrying structure that the embodiment of the invention provides is used to carry wafer, and said wafer carrying structure comprises:
Because wafer carrying structure provided by the invention comprises pallet 101 and is fixed on the carrier 102 on the pallet 101; Wafer 200 to be processed is fixed on the said carrier 102; Thereby the surface smoothness to said pallet 101 requires to reduce; And protect said pallet 101 in wafer fabrication processes, not to be damaged, and it can be reused, practiced thrift cost.
Further, the matrix resin of said polymer is any in polyimides, benzoxazine, the benzocyclobutene.Certainly, the present invention is as limit, as long as can make matrix resin that polymer satisfies above-mentioned mechanical tolerable temperature and mechanical strength all within protection scope of the present invention.And, in order further to regulate the thermomechanical property of material, also can in above-mentioned polymer, add inorganic filler particle, thereby form polymer composites.Wherein, mechanical tolerable temperature is meant that mechanical performance does not change in given temperature range, and Young's modulus has reflected the mechanical property of material, and just said polymer is necessary for heat cured non-brittle material.
Further, the thickness of said carrier 102 is 10～15mm, thereby makes it can stand repeatedly to consume.
Further, said pallet 101 is silicon chip or sheet glass or sheet metal, thereby can reduce cost greatly with respect to traditional silicon chip.
Preparation method about wafer carrying structure provided by the invention sees also following specifying.
Embodiment 1
Please refer to Fig. 2 and Fig. 3 A to Fig. 3 D; Wherein, Preparation method's flow chart of the wafer carrying structure that Fig. 2 provides for first embodiment of the invention; Fig. 3 A to Fig. 3 D is the profile of the corresponding wafer carrying structure of each step of preparation method of the wafer carrying structure that provides of first embodiment of the invention, and in conjunction with Fig. 2 and Fig. 3 A to Fig. 3 D, the preparation method of the wafer carrying structure that first embodiment of the invention provides comprises the steps:
S101, prepare said pallet 101, and its surface is cleaned, shown in Fig. 3 A;
S102, a cylindrical, hollow mould 300 is fixed on the surface of said pallet 101, the internal diameter of said cylindrical, hollow mould 300 and the equal diameters of said wafer are shown in Fig. 3 B; Wherein, the height of said cylindrical, hollow mould is 10～15mm.
S103, in said cylindrical, hollow mould 300, put into the polymer monomer that constitutes by said polymer or the precuring thing of said polymer monomer, and be heating and curing, form said carrier 200, shown in Fig. 3 C;
S104, remove said cylindrical, hollow mould 300, obtain said wafer carrying structure, shown in Fig. 3 D.
Readiness tray, and its surface cleaned;
Prepare said carrier; Particularly, prepare a cylindrical, hollow mould, the internal diameter of said cylindrical, hollow mould and the equal diameters of said wafer earlier; In said cylindrical, hollow mould, put into the polymer monomer that constitutes by polymer or the precuring thing of said polymer monomer again, and be heating and curing, form said carrier; Wherein, the height of said cylindrical, hollow mould is 10～15mm;
Said carrier is adhered on the said pallet, form said wafer carrying structure.
Please continue with reference to figure 4 and Fig. 5 A to Fig. 5 D, wherein, the flow chart of the wafer thining method that Fig. 4 provides for the embodiment of the invention, Fig. 5 A to Fig. 5 D are the corresponding section of structure of each step of wafer thining method that the embodiment of the invention provides; In conjunction with Fig. 4 and Fig. 5 A to Fig. 5 D, the wafer thining method that the embodiment of the invention provides comprises the steps:
(1) preparation wafer carrying structure; Particularly, utilize the preparation method of the foregoing description 1 or embodiment 2 described wafer carrying structures to prepare said wafer carrying structure;
(2) planarization and polishing are carried out in the surface of the carrier 102 in the said wafer carrying structure; Make its surfacing; The sketch map of the wafer carrying structure after the polishing is shown in Fig. 5 A;
(3) wafer 200 that will treat attenuate processing adheres to the surface of the carrier 102 after the said polishing, shown in Fig. 5 B;
(4) said wafer 200 is carried out attenuate and TSV technology, shown in Fig. 5 C;
(5) wafer 200 of said wafer carrying structure after the said processing removed, shown in Fig. 5 D, the surface of said carrier 102 possibly be damaged in technologies such as TSV via etch;
(6) said carrier 102 surfaces are cleaned, when the thickness of carrier 102 after the cleaning during more than or equal to 1mm, repeating step (2) is to (5); Wherein, the bonding agent that refers to clean said carrier 102 remained on surface is particularly cleaned on said carrier 102 surfaces;
When (7) thickness of the carrier 102 after cleaning is less than 1mm, remove said remaining carrier 102, and repeating step (1) is to (6); Promptly on said pallet 101, prepare carrier again and carry out subsequent handling.
In sum; The invention provides a kind of wafer carrying structure, comprise pallet and be fixed on the carrier on the pallet, wafer to be processed is fixed on the said carrier; Thereby the surface smoothness to said pallet requires to reduce; And protect said pallet in wafer fabrication processes, not to be damaged, and it can be reused, practiced thrift cost; Simultaneously; A kind of preparation method of wafer carrying structure also is provided; This method is through putting into a cylindrical, hollow mould with the precuring thing of polymer monomer or polymer monomer; And be heating and curing, directly after forming carrier on the said pallet or forming carrier through being adhesively fixed on the said pallet, simple and convenient; Simultaneously, a kind of wafer thining method is provided also, this method utilizes above-mentioned wafer carrying structure in the wafer processing technology, to carry wafer, and is convenient and reliable, and compatible fully with existing wafer attenuate and TSV processing technology.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (11)
1. a wafer carrying structure is used to carry wafer, it is characterized in that, comprising:
Pallet is the disk shape, and its diameter is not less than the diameter of said wafer, and its Young's modulus is not less than 6GPa, and mechanical tolerable temperature scope is 350 ℃ and following.
Carrier is the disk shape, is fixed on the said pallet; Wherein said wafer is fixed on the said carrier; The diameter of said carrier and the equal diameters of said wafer; Said carrier is made up of polymer, and its mechanical tolerable temperature scope is 350 ℃ and following, and the scope of Young's modulus is 2～25GPa.
2. wafer carrying structure as claimed in claim 1 is characterized in that, the matrix resin of said polymer is any in polyimides, benzoxazine, the benzocyclobutene.
3. wafer carrying structure as claimed in claim 2 is characterized in that, is added with inorganic filler particle in the said polymer.
4. like each described wafer carrying structure of claim 1 to 3, it is characterized in that the thickness of said carrier is 10～15mm.
5. wafer carrying structure as claimed in claim 1 is characterized in that, said pallet is silicon chip or sheet glass or sheet metal.
6. the preparation method like each described wafer carrying structure of claim 1 to 5 is characterized in that, comprises the steps:
Prepare said pallet, and its surface is cleaned;
One cylindrical, hollow mould is fixed on the surface of said pallet, the internal diameter of said cylindrical, hollow mould and the equal diameters of said wafer;
In said cylindrical, hollow mould, put into the polymer monomer that constitutes by said polymer or the precuring thing of said polymer monomer, and be heating and curing, form said carrier;
Remove said cylindrical, hollow mould, obtain said wafer carrying structure.
7. the preparation method of wafer carrying structure as claimed in claim 6 is characterized in that, the height of said cylindrical, hollow mould is 10～15mm.
8. the preparation method like each described wafer carrying structure of claim 1 to 5 is characterized in that, comprises the steps:
Prepare said pallet, and its surface is cleaned;
Prepare said carrier;
Said carrier is adhered on the said pallet, form said wafer carrying structure.
9. the preparation method of wafer carrying structure as claimed in claim 8 is characterized in that, the said carrier of said preparation comprises the steps:
Prepare a cylindrical, hollow mould, the internal diameter of said cylindrical, hollow mould and the equal diameters of said wafer;
In said cylindrical, hollow mould, put into the polymer monomer that constitutes by polymer or the precuring thing of said polymer monomer, and be heating and curing, form said carrier.
10. the preparation method of wafer carrying structure as claimed in claim 9 is characterized in that, the height of said cylindrical, hollow mould is 10～15mm.
11. a wafer thining method is characterized in that, comprises the steps:
(1) utilize preparation method to prepare said wafer carrying structure like each described wafer carrying structure in the claim 6 to 10;
(2) planarization and polishing are carried out in the surface of the carrier in the said wafer carrying structure;
(3) wafer that will treat attenuate processing adheres to the surface of the carrier after the said polishing;
(4) said wafer is carried out attenuate and TSV technology;
(5) wafer of said wafer carrying structure after the said processing removed;
(6) said carrier surface is cleaned, when the thickness of carrier after the cleaning during more than or equal to 1mm, repeating step (2) is to (5);
When (7) thickness of the carrier after cleaning is less than 1mm, remove said remaining carrier, and repeating step (1) is to (6).
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| CN103050392A (en) * | 2013-01-10 | 2013-04-17 | 武汉电信器件有限公司 | Grinding polishing method for wafer |
| CN105977168A (en) * | 2016-07-18 | 2016-09-28 | 华进半导体封装先导技术研发中心有限公司 | Substrate plastic packaging body thinning method |
| CN108257888A (en) * | 2016-12-29 | 2018-07-06 | 江苏鲁汶仪器有限公司 | A kind of wafer cutting device and method |
| CN110223909A (en) * | 2019-05-29 | 2019-09-10 | 浙江荷清柔性电子技术有限公司 | A kind of crystal round fringes processing method and wafer assembly |
| CN110739390A (en) * | 2019-10-24 | 2020-01-31 | 中芯集成电路制造(绍兴)有限公司 | Temperature compensation type surface acoustic wave filter device and manufacturing method thereof |
| CN112133666A (en) * | 2020-09-28 | 2020-12-25 | 北京国联万众半导体科技有限公司 | Millimeter wave chip manufacturing method |
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| CN103050392A (en) * | 2013-01-10 | 2013-04-17 | 武汉电信器件有限公司 | Grinding polishing method for wafer |
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| CN110223909A (en) * | 2019-05-29 | 2019-09-10 | 浙江荷清柔性电子技术有限公司 | A kind of crystal round fringes processing method and wafer assembly |
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| CN110739390A (en) * | 2019-10-24 | 2020-01-31 | 中芯集成电路制造(绍兴)有限公司 | Temperature compensation type surface acoustic wave filter device and manufacturing method thereof |
| CN112133666A (en) * | 2020-09-28 | 2020-12-25 | 北京国联万众半导体科技有限公司 | Millimeter wave chip manufacturing method |
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