CN110223909A - A kind of crystal round fringes processing method and wafer assembly - Google Patents
A kind of crystal round fringes processing method and wafer assembly Download PDFInfo
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- CN110223909A CN110223909A CN201910458709.9A CN201910458709A CN110223909A CN 110223909 A CN110223909 A CN 110223909A CN 201910458709 A CN201910458709 A CN 201910458709A CN 110223909 A CN110223909 A CN 110223909A
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- round fringes
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- 239000013078 crystal Substances 0.000 title claims abstract description 36
- 238000003672 processing method Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 70
- 239000007788 liquid Substances 0.000 claims abstract description 36
- 238000005538 encapsulation Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 238000007711 solidification Methods 0.000 claims description 26
- 230000008023 solidification Effects 0.000 claims description 26
- 239000004925 Acrylic resin Substances 0.000 claims description 9
- 229920000178 Acrylic resin Polymers 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 7
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 7
- 239000005416 organic matter Substances 0.000 claims description 7
- 239000004814 polyurethane Substances 0.000 claims description 7
- 229920002635 polyurethane Polymers 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 238000004382 potting Methods 0.000 claims description 2
- 239000006188 syrup Substances 0.000 claims description 2
- 235000020357 syrup Nutrition 0.000 claims description 2
- 239000010426 asphalt Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 56
- 230000001681 protective effect Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A kind of crystal round fringes processing method, the crystal round fringes have chamfering, which comprises provide the mold to be horizontally arranged the wafer；The wafer level is put into the mold；Along the mold inner edge pouring liquid curable materials；Solidify the liquid curable material, encapsulates the crystal round fringes chamfering；The wafer encapsulated is taken out from the mold.The invention also discloses the wafer assembly formed after a kind of processing of crystal round fringes, the crystal round fringes have chamfering, and the wafer assembly includes encapsulation piece, and encapsulation piece forms tight enclosing to the crystal round fringes chamfering along the crystal round fringes.The present invention avoids it that chipping phenomenon vacantly occurs at chamfering in thinning process using the method for resin polymers encapsulating crystal round fringes chamfering.
Description
Technical field
The present invention relates to technical field of semiconductors, handle more particularly to a kind of crystal round fringes processing method and crystal round fringes
The wafer assembly formed afterwards.
Background technique
It is main at present that crystalline substance is still thinned by grinding back surface in terms of preparing flexible chip using traditional silicon-based wafer
Circle, pad pasting support the traditional handicrafts such as transfer, machine cuts to realize.
Aspect is thinned in wafer, common method there are 4 kinds in the industry at present: 1) being directly thinned after the pasting protective film of front, due to
Crystal round fringes design chamfering reason, and thickness thinning is easy to happen chipping and extends crackle when being lower than 20um；2) increase support wafer
It is thinned after interim bonding, due to increasing support construction and bonding structure, leads to the wafer thickness fluctuation range obtained after being thinned
Increase；3) reduction process after first precuting, this method is more demanding to cutting equipment and front protecting film, and chip thickness mistake
When thin (< 20um), be easy to happen glue film overflow and chip position slide situations such as, be not easy to subsequent encapsulation；4) side Taiko
Method retains the circle of edge one without grinding, plays the role of fixed support to center abrasive areas, avoid warpage when grinding,
This method is main problem is that the thin slice pad pasting after edge ring cutting cuts link, because the protection of no film is easy to happen damaged sliver.
Summary of the invention
The purpose of the present invention is to provide the sets of wafers formed after a kind of crystal round fringes processing method and crystal round fringes processing
Part had not only been avoided that chamfering chipping, but also did not influenced wafer original structure.
The present invention provides a kind of crystal round fringes processing method, and the crystal round fringes have chamfering, which comprises provide
To be horizontally arranged the mold of the wafer；The wafer level is put into the mold；Along mold inner edge potting syrup
State curable materials；Solidify the liquid curable material, encapsulates the crystal round fringes chamfering；It has been encapsulated described
Wafer takes out from the mold.
Further, the liquid curable material is acrylic resin, epoxy resin or polyurethanes organic matter.
Further, the liquid curable material be viscosity be 500~1000mPas, material hardness is after solidification
The acrylate or viscosity of 60-70 be 1000~2000mPas, the methacrylate that material hardness is 65-75 after solidification,
Or the two component epoxy based resins that viscosity is 4000~6000mPas, material hardness is 83-93 after solidification.
Further, the wafer frontside described when the wafer level is put into the mold is put into downward.
Further, it is described along the mold inner edge pouring liquid curable materials when so that casting after the liquid can
The height of curing materials is not higher than the thickness of the wafer.
The present invention also provides the wafer assembly formed after a kind of processing of crystal round fringes, the crystal round fringes have chamfering, institute
Stating wafer assembly includes encapsulation piece, and the encapsulation piece forms tight enclosing to the crystal round fringes chamfering along the crystal round fringes.
Further, in the backside of wafer side, the encapsulation piece is not higher than the backside of wafer.
Further, the encapsulation piece is formed by curing by liquid curable material.
Further, the liquid curable material is acrylic resin, epoxy resin or polyurethanes organic matter
Further, the liquid curable material be viscosity be 500~1000mPas, material hardness is after solidification
The acrylate or viscosity of 60-70 be 1000~2000mPas, the methacrylate that material hardness is 65-75 after solidification,
Or the two component epoxy based resins that viscosity is 4000~6000mPas, material hardness is 83-93 after solidification.
The wafer assembly formed after crystal round fringes processing method of the present invention and crystal round fringes processing can be consolidated by using liquid
Change material and encapsulate crystal round fringes chamfering, not only can avoid it and chipping phenomenon vacantly occurs at chamfering in thinning process, but also do not influenced
Wafer original structure does not introduce applied external force, therefore can answer to avoid the fluctuation bring mechanical/thermal by edge cutting processes
Power is to influence the effective core reliability in edge, to improve yields.
Detailed description of the invention
Fig. 1 is a kind of artwork of crystal round fringes processing method of the embodiment of the present invention.
Fig. 2 is a kind of flow chart of crystal round fringes processing method of the embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is not intended to limit the scope of the invention for illustrating the present invention.
As shown in Figure 1, 2, the present embodiment discloses a kind of crystal round fringes processing method, and 1 edge of wafer to edge processing has
There is chamfering 2.This method comprises:
The mold 3 of S1, offer to be horizontally arranged wafer 1；
S2,1 level of wafer is put into mold 3；
S3, along 3 inner edge pouring liquid curable materials 4 of mold, and solidify liquid curable material 4,1 edge of wafer made to fall
It is encapsulated at angle 2；
S4, the wafer 1 encapsulated is taken out from mold 3.
In the present embodiment, step S1, in S2, wafer 1 can be 12 cun and following monocrystalline silicon wafer crystal, be also possible to 12 cun and
The wafer that other common semiconductor materials of following size are constituted.Mold 3 is dedicated releasable clamp, guarantees that wafer 1 demoulds
When it is intact, other molds can also be used in other embodiments.When 1 level of wafer is put into mold 3,1 front of wafer
Place downwards, it is multiple in the front face surface so as to protect wafer 1 kept apart by dicing lane, the chip of processing to be packaged (is not schemed
Show) it is not stain.
In the present embodiment, in step S3, according to liquid after 3 inner edge pouring liquid curable materials 4 of mold, casting complete
The property of curable materials 4 selects different modes to be solidified, and encapsulates 1 edge chamfer 2 of wafer.Liquid curable material
Material 4 for 1 edge of wafer have good binding force, have good insulation performance, have suitable viscosity, solidification before and after
The small material of volume change.
Acrylic resin, epoxy resin or polyurethanes organic matter, the choosing of concrete type can be used in liquid curable material 4
It selects the requirement for needing to meet several aspects: 1) there is good binding force with 1 edge of wafer, while also having after hardening biggish
Elasticity modulus and hardness, to play a good protective effect in thinning process to 1 edge of wafer；2) has good insulating properties
Can, avoid it from having an impact the chip of surrounding；3) there is suitable viscosity, to ensure to use micro- small-bore ink gun can
With smoothly plastic emitting, phenomena such as blocking will not occur, reunite, while being also convenient for controlling the height of stroke step by gel quantity；
4) volume change for solidifying front and back is small, avoids because of the excessive protective effect lost to edge of Material shrinkage after solidifying.According to above
It is required that can choose acrylic resin, epoxy resin, polyurethanes organic matter etc..In other embodiments, other liquid can also be used
State curable materials.
In one embodiment, liquid curable material 4 can be viscosity be 680mPas, can be under the UV light of 1000mJ/cm2
Material hardness is 65, tensile modulus of elasticity 75MPa, tensile strength 7N/mm2, solidifies front and back quality after being solidified, being solidified
3410 acrylic resins than being 0.1% are lost, are weak yellow liquid under room temperature, having enough hardness can be hanging to chamfering 2
Good supporting role is played at place, and elasticity modulus and 1 main component silicon of wafer are close, is had well after encapsulating 1 edge of wafer
Adhesion strength.Using above-mentioned material, a width is prepared in the annulus of 2~3mm along 1 edge of wafer and wafer 1 is formed closely
Encapsulating.
The propylene that viscosity is 500~1000mPas, material hardness is 60-70 after solidification can be selected in other embodiments
The methacrylate or viscosity that acid esters or viscosity are 1000~2000mPas, material hardness is 65-75 after solidification be
Material hardness is the two component epoxy based resins of 83-93 after 4000~6000mPas, solidification.Wherein, the parameter of acrylate
Are as follows: in the case of 25 DEG C, 500~1000mPas, material hardness is 60-70, preferably 65 after solidification, and tensile modulus of elasticity is big
It is greater than 7N/mm2, solidification front and back mass loss ratio less than 0.1% in 75MPa, tensile strength.The parameter of methacrylate are as follows:
In the case of 25 DEG C, 1000~2000mPas, material hardness is 65-75, preferably 60 after solidification, and tensile modulus of elasticity is
90MPa, tensile strength are greater than 7N/mm2, solidification front and back mass loss ratio less than 0.1%.The parameter of two component epoxy based resins
Are as follows: in the case of 25 DEG C, 4000~6000mPas, material hardness is 83-93, preferably 88 after solidification, and tensile modulus of elasticity is
75MPa, compressive strength are greater than 17N/mm2, solidification front and back mass loss ratio less than 0.1%.
When along 3 inner edge pouring liquid curable materials 4 of mold, make liquid curable material after being poured by controlling gel quantity
The height of material 4 is not higher than the thickness of wafer 1, to reduce the subsequent thinned workload for waiting operations.
In the present embodiment, in step S4, the wafer 1 encapsulated is taken out from mold 3, comprising: mold is removed, is obtained
The wafer 1 that edge chamfer 2 has been encapsulated.
As shown in Figure 1, 2, in the present embodiment, the wafer assembly formed after a kind of 1 edge processing of wafer, 1 edge of wafer tool
There is chamfering 2.Wafer assembly includes encapsulation piece, and encapsulation piece forms tight enclosing to chamfering 2 along 1 edge of wafer.Encapsulation piece is by wafer 1
It is placed horizontally in mold 3, and pouring liquid curable materials are formed.Other modes can also be taken to make in other embodiments
Encapsulation piece.
In the present embodiment, in 1 reverse side of wafer, encapsulation piece is not higher than 1 back side of wafer, grasps to reduce subsequent thinned wait
The workload of work.
In the present embodiment, encapsulation piece is formed by curing by liquid curable material 4, and liquid curable material 4 is and 1 side of wafer
Edge with good binding force, have good insulation performance, with suitable viscosity, solidify front and back volume change it is small
Material.Acrylic resin is used in the present embodiment, and epoxy resin or polyurethanes organic matter also can be selected in other embodiments,
Other materials can also be used in other embodiments, the selection of concrete type needs to meet the requirement of several aspects: 1) with wafer 1
Edge has good binding force, while also having biggish elasticity modulus and hardness after hardening, in thinning process to crystalline substance
The edge of the circle plays a good protective effect；2) have good insulation performance, it is avoided to have an impact the chip of surrounding；3) have
Have suitable viscosity, with ensure using micro- small-bore ink gun can smoothly plastic emitting, blocking will not occur, reunite etc. and is existing
As, while being also convenient for controlling the height of stroke step by gel quantity；4) volume change for solidifying front and back is small, avoids because after solidification
The excessive protective effect lost to edge of Material shrinkage.In other embodiments, other liquid curable materials can also be used.This reality
It applies in example, liquid curable material 4 is material after viscosity is 680mPas, can be solidified, be solidified under the UV light of 1000mJ/cm2
Material hardness is 65, tensile modulus of elasticity 75MPa, tensile strength 7N/mm2, solidifies front and back mass loss than being 0.1%
3410 acrylic resins.
The propylene that viscosity is 500~1000mPas, material hardness is 60-70 after solidification can be selected in other embodiments
The methacrylate or viscosity that acid esters or viscosity are 1000~2000mPas, material hardness is 65-75 after solidification be
Material hardness is the two component epoxy based resins of 83-93 after 4000~6000mPas, solidification.
In the present embodiment, after being encapsulated using liquid curable material to 1 edge chamfer 2 of wafer, it both can avoid it and be thinned
Chipping phenomenon vacantly occurs at chamfering 2 in the process, and does not influence 1 original structure of wafer, does not introduce applied external force, therefore can be with
Avoid the fluctuation bring mechanical/thermal stress by edge cutting processes to influence the effective core reliability in edge, to improve good
Product rate.Chamfering encapsulates the wafer chamfer structure for being applicable to various shapes, and flexibility is high.
Herein, term " on ", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outside", " perpendicular
Directly ", the orientation or positional relationship of the instructions such as "horizontal" is to be based on the orientation or positional relationship shown in the drawings, merely to expression skill
The clear and description of art scheme is convenient, therefore is not considered as limiting the invention.
Herein, the terms "include", "comprise" or any other variant thereof is intended to cover non-exclusive inclusion, are removed
It comprising those of listed element, but also may include other elements that are not explicitly listed.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of crystal round fringes processing method, the crystal round fringes have chamfering, which is characterized in that the described method includes: providing
To be horizontally arranged the mold of the wafer；The wafer level is put into the mold；Along mold inner edge potting syrup
State curable materials；Solidify the liquid curable material, encapsulates the crystal round fringes chamfering；It has been encapsulated described
Wafer takes out from the mold.
2. the method as described in claim 1, which is characterized in that the liquid curable material is acrylic resin, asphalt mixtures modified by epoxy resin
Rouge or polyurethanes organic matter.
3. the method as described in claim 1, which is characterized in that the liquid curable material be viscosity be 500~
The acrylate or viscosity that material hardness is 60-70 after 1000mPas, solidification are material after 1000~2000mPas, solidification
Expect that hardness is the methacrylate of 65-75 or viscosity is 4000~6000mPas, material hardness is 83-93's after solidification
Two component epoxy based resins.
4. the method as described in claim 1, which is characterized in that described that the wafer level is put into Shi Suoshu in the mold
Wafer frontside is put into downward.
5. the method as described in claim 1, which is characterized in that described after the mold inner edge pouring liquid curable materials
The height of the liquid curable material is not higher than the thickness of the wafer.
6. the wafer assembly formed after a kind of crystal round fringes processing, the crystal round fringes have chamfering, which is characterized in that the crystalline substance
Circle component includes encapsulation piece, and the encapsulation piece forms tight enclosing to the crystal round fringes chamfering along the crystal round fringes.
7. wafer assembly as claimed in claim 6, which is characterized in that in the backside of wafer side, the encapsulation piece is not high
In the backside of wafer.
8. wafer assembly as claimed in claim 6, which is characterized in that the encapsulation piece solidifies shape by liquid curable material
At.
9. wafer assembly as claimed in claim 8, which is characterized in that the liquid curable material is acrylic resin, ring
Oxygen resin or polyurethanes organic matter.
10. wafer assembly as claimed in claim 8, which is characterized in that the liquid curable material be viscosity be 500~
The acrylate or viscosity that material hardness is 60-70 after 1000mPas, solidification are material after 1000~2000mPas, solidification
Expect that hardness is the methacrylate of 65-75 or viscosity is 4000~6000mPas, material hardness is 83-93's after solidification
Two component epoxy based resins.
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| CN201910458709.9A CN110223909B (en) | 2019-05-29 | 2019-05-29 | Wafer edge processing method and wafer assembly |
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| CN201910458709.9A CN110223909B (en) | 2019-05-29 | 2019-05-29 | Wafer edge processing method and wafer assembly |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112959211A (en) * | 2021-02-22 | 2021-06-15 | 长江存储科技有限责任公司 | Wafer processing apparatus and processing method |
| CN113843115A (en) * | 2021-09-22 | 2021-12-28 | 浙江华帅特新材料科技有限公司 | Mold for substrate surface functionalization and substrate surface functionalization method |
| CN114347279A (en) * | 2021-12-31 | 2022-04-15 | 苏州北汀羽电子有限公司 | Wafer slotting method and yellow glue film edge cutting equipment |
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| CN102496596A (en) * | 2011-12-27 | 2012-06-13 | 复旦大学 | Wafer bearing structure and preparation method thereof, and wafer thinning method |
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| CN104599982A (en) * | 2014-12-11 | 2015-05-06 | 南通富士通微电子股份有限公司 | Whole-sealing semiconductor wafer packaging mold |
| CN107275234A (en) * | 2016-04-08 | 2017-10-20 | 株式会社迪思科 | The manufacture method of encapsulated wafer and the manufacture method of device chip |
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| CN112959211B (en) * | 2021-02-22 | 2021-12-31 | 长江存储科技有限责任公司 | Wafer processing apparatus and processing method |
| CN113843115A (en) * | 2021-09-22 | 2021-12-28 | 浙江华帅特新材料科技有限公司 | Mold for substrate surface functionalization and substrate surface functionalization method |
| CN113843115B (en) * | 2021-09-22 | 2022-09-23 | 浙江华帅特新材料科技有限公司 | Mold for substrate surface functionalization and substrate surface functionalization method |
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