JP5170282B2 - Manufacturing method of electronic parts - Google Patents

Description

  The present invention relates to an electronic component manufacturing method.

  In recent years, electronic devices including surface acoustic wave elements (hereinafter referred to as “SAW (Surface Acoustic Wave) elements” as appropriate) are used as resonators, bandpass filters, and the like in electronic devices such as mobile phones and television receivers. Yes. Patent Documents 1 and 2 below disclose examples of technologies related to electronic components including SAW elements. Patent Document 1 discloses a technique related to an electronic component package in which a SAW element and an integrated circuit that drives and controls the SAW element are arranged in the same space. Patent Document 2 discloses a technique related to a package of an electronic component in which a SAW element is mounted on a first substrate and an integrated circuit is mounted on a second substrate.

JP 2002-290184 A JP 2002-290200 A

  By the way, along with a demand for downsizing of an electronic device on which an electronic part equipped with a SAW element is mounted, downsizing of the electronic part itself is also required. However, in the configuration of the above-mentioned Patent Document 1, since the SAW element and the integrated circuit are arranged in parallel, it is difficult to reduce the size. Similarly, in the configuration of Patent Document 2, since the first substrate on which the SAW element is mounted and the second substrate on which the integrated circuit is mounted are arranged so as to overlap each other, it is difficult to reduce the thickness (downsize).

  In addition to electronic components including SAW elements, miniaturization of electronic components including electronic elements such as crystal resonators, piezoelectric resonators, and piezoelectric tuning forks is also required.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide a method for manufacturing an electronic component that can be reduced in size.

  In order to solve the above problems, an electronic component according to the present invention includes a semiconductor substrate, a through electrode penetrating a first surface of the semiconductor substrate and a second surface opposite to the first surface, and the semiconductor substrate. And an electronic element provided on the first surface side of the first surface and a sealing member that seals the electronic device between the first surface, and the electronic device is electrically connected to the through electrode. It is characterized by being.

  According to the present invention, the electronic device is provided on the first surface side of the semiconductor substrate, and the electronic device is connected to the through electrode penetrating the first surface and the second surface. By providing an integrated circuit for driving and controlling the electronic element, it is possible to electrically connect the electronic element and the integrated circuit through the through electrode. Therefore, it is possible to drive the electronic element satisfactorily while realizing a reduction in size and thickness of the entire electronic component. Since the electronic element is sealed between the first surface by the sealing member, the electronic element can be well sealed while realizing downsizing and thinning, and the electronic element is driven well. can do. According to the present invention, an electronic component of a semiconductor substrate size (real chip size: ultimate small size) having a semiconductor package function, an electronic element function, and a sealing function can be provided.

  In the electronic component of the present invention, the electronic element can employ a configuration provided on the first surface.

  According to the present invention, it is possible to further reduce the size and thickness of an electronic component by forming an electronic element on the first surface of the semiconductor substrate.

  In the electronic component of the present invention, the electronic element may be provided at a position away from the first surface and connected to the through electrode.

  According to the present invention, the degree of freedom in designing the electronic element can be improved by providing the electronic element at a position separated from the first surface of the semiconductor substrate. By connecting the electronic element and the through electrode in a state in which the electronic element is separated from the first surface, the electronic element can be driven well while realizing a reduction in size and thickness of the electronic component. .

  The electronic component of the present invention includes a second member having a third surface facing the first surface, and the electronic element is provided on the third surface and connected to the through electrode. Can be adopted.

  According to the present invention, since the electronic device is provided on the third surface of the second member, the electronic device can be favorably supported by the second member. Therefore, the electronic element can be driven satisfactorily.

  In the electronic component of the present invention, the second member may employ a configuration including the sealing member.

  According to the present invention, by providing the electronic element on the sealing member, the degree of freedom in designing the electronic element can be improved while suppressing the number of parts. By connecting the electronic element and the through electrode while the electronic element is supported by the sealing member, it is possible to drive the electronic element satisfactorily while realizing a reduction in size and thickness of the electronic component. .

  In the electronic component of the present invention, the second member may employ a configuration including a second substrate provided between the first surface and the sealing member.

  According to the present invention, the degree of freedom in designing the electronic element can be improved by providing it on the second substrate provided between the sealing member and the semiconductor substrate. By connecting the electronic element and the through electrode while the electronic element is supported by the second substrate, it is possible to drive the electronic element satisfactorily while realizing a reduction in size and thickness of the electronic component. .

  In the electronic component of the present invention, it is possible to employ a configuration in which a connection terminal for electrically connecting to an external device is provided on the second surface of the semiconductor substrate.

  According to the present invention, an electronic component can be electrically connected to an external device (circuit board or the like) via a connection terminal provided on the second surface of the semiconductor substrate. Therefore, an electronic component that has been reduced in size and thickness can be mounted on an external device, and the entire external device can be prevented from being enlarged.

  In the electronic component of the present invention, the electronic element can employ a configuration including a surface acoustic wave element.

  According to the present invention, the surface acoustic wave element can be driven satisfactorily while realizing a reduction in size and thickness of the entire electronic component. Since the surface acoustic wave element is sealed between the first surface by the sealing member, the surface acoustic wave element can be satisfactorily sealed while realizing a reduction in size and thickness. The wave element can be driven satisfactorily. The electronic element according to the present invention is not limited to a surface acoustic wave element, but may be an element that requires sealing, for example, a quartz crystal vibrator, a piezoelectric vibrator, a piezoelectric tuning fork, or the like.

  The circuit board of the present invention is characterized in that the electronic component described above is mounted.

  ADVANTAGE OF THE INVENTION According to this invention, the circuit board (printed wiring board etc.) with which the electronic component by which size reduction and thickness reduction were implement | achieved can be provided. Therefore, it is possible to prevent the entire electronic device on which the circuit board is mounted from becoming large.

  An electronic apparatus according to the present invention includes the electronic component described above.

  ADVANTAGE OF THE INVENTION According to this invention, the electronic device with which the electronic component in which size reduction and thickness reduction were implement | achieved can be provided. Accordingly, it is possible to provide an electronic device in which enlargement is suppressed.

  The method of manufacturing an electronic component according to the present invention includes a step of providing a through electrode penetrating a first surface of a semiconductor substrate and a second surface opposite to the first surface, and a first surface side of the semiconductor substrate, Providing an electronic element electrically connected to the through electrode and connecting a sealing member for sealing the electronic element to the first surface between the first surface and the first surface. And

  According to the present invention, the electronic device is provided on the first surface side of the semiconductor substrate, and the electronic device is connected to the through electrode penetrating the first surface and the second surface. By providing an integrated circuit for driving and controlling the electronic element, it is possible to electrically connect the electronic element and the integrated circuit through the through electrode. Therefore, it is possible to drive the electronic element satisfactorily while realizing a reduction in size and thickness of the entire electronic component. Since the electronic element is sealed between the first surface by the sealing member, the electronic element can be well sealed while realizing downsizing and thinning, and the electronic element is driven well. can do.

  In the manufacturing method of the present invention, a hole is provided in the second surface of the semiconductor substrate, and a conductive material for forming the through electrode is disposed inside the hole, and then the first surface of the semiconductor substrate. It is possible to employ a configuration including a step of thinning the semiconductor substrate by processing the above.

  According to the present invention, after forming a hole in the second surface of the semiconductor substrate and disposing a conductive material in the hole, the first surface is subjected to a predetermined process such as a polishing process to thin the semiconductor substrate. Thereby, a penetration electrode can be exposed to the 1st surface side, and a penetration electrode can be formed efficiently.

  In the manufacturing method of the present invention, it is possible to adopt a configuration in which a plurality of the electronic elements are formed substantially simultaneously on the same semiconductor substrate, and then the semiconductor substrate is cut for each electronic element.

  According to the present invention, an electronic component can be efficiently manufactured by forming a plurality of electronic elements on a semiconductor substrate substantially simultaneously and then cutting the semiconductor substrate for each electronic element. Cost reduction can be realized.

  In the manufacturing method of the present invention, the electronic element may employ a configuration including a surface acoustic wave element.

  According to the present invention, the surface acoustic wave element can be driven satisfactorily while realizing a reduction in size and thickness of the entire electronic component. Since the surface acoustic wave element is sealed between the first surface by the sealing member, the surface acoustic wave element can be satisfactorily sealed while realizing a reduction in size and thickness. The wave element can be driven satisfactorily. The electronic element according to the present invention is not limited to a surface acoustic wave element, but may be an element that requires sealing, for example, a quartz crystal vibrator, a piezoelectric vibrator, a piezoelectric tuning fork, or the like.

It is sectional drawing which shows 1st Embodiment of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is a figure for demonstrating the manufacturing process of an electronic component. It is sectional drawing which shows 2nd Embodiment of an electronic component. It is sectional drawing which shows 3rd Embodiment of an electronic component. It is a figure which shows the electronic device with which the electronic component was mounted.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Surface Acoustic Wave Device (First Embodiment)>
A first embodiment of the electronic component of the present invention will be described with reference to FIG. In this embodiment, a case where an electronic element is applied to a surface acoustic wave element will be described as an example, and a case where an electronic component is applied to a surface acoustic wave device will be described as an example. In the following description, the surface acoustic wave element is appropriately referred to as a “SAW (Surface Acoustic Wave) element”, and the surface acoustic wave device is appropriately referred to as a “SAW package”.

  In FIG. 1, a SAW package 1 includes a semiconductor substrate 10 made of a silicon substrate, a SAW element 50 provided on the first surface 10A side of the semiconductor substrate 10, and the first surface 10A and the opposite side of the first surface 10A. And a through electrode 12 penetrating the second surface 10B. The SAW element 50 is provided on the first surface 10 </ b> A of the semiconductor substrate 10. The SAW element 50 is configured to include a piezoelectric thin film and a comb electrode in contact with the piezoelectric thin film, and is formed on the first surface 10 </ b> A of the semiconductor substrate 10. Although not shown, an integrated circuit including, for example, a transistor, a memory element, and other electronic elements is formed on the second surface 10B of the semiconductor substrate 10. One end portion of the through electrode 12 is electrically connected to the SAW element 50 provided on the first surface 10A, and the other end portion of the through electrode 12 is provided on the second surface 10B. The circuit and the electrode 15 are electrically connected. Accordingly, the SAW element 50 provided on the first surface 10A of the semiconductor substrate 10 and the integrated circuit provided on the second surface 10B of the semiconductor substrate 10 are electrically connected via the through electrode 12. . Further, an insulating film 13 is provided between the through electrode 12 and the semiconductor substrate 10, and the through electrode 12 and the semiconductor substrate 10 are electrically insulated.

  In addition, the SAW package 1 includes a sealing member 40 that seals the SAW element 50 between the first surface 10A and the first surface 10A. The sealing member 40 is formed of a glass substrate. The sealing member 40 may be a silicon substrate. A third surface 40A of the sealing member 40 facing the first surface 10A of the semiconductor substrate 10 is provided at a position away from the first surface 10A. The peripheral portion of the first surface 10 </ b> A of the semiconductor substrate 10 and the peripheral portion of the third surface 40 </ b> A of the sealing member 40 are bonded by the adhesive layer 30. The adhesive layer 30 is made of a synthetic resin such as a polyimide resin. The internal space 60 surrounded by the first surface 10A of the semiconductor substrate 10, the third surface 40A of the sealing member 40, and the adhesive layer 30 is substantially sealed (air-tightly sealed). The SAW element 50 is arranged at 60.

  An underlayer 11 is provided on the second surface 10 </ b> B of the semiconductor substrate 10. The underlayer 11 is made of an insulating material such as silicon oxide (SiO2). In addition, an electrode 15 is provided in each of a plurality of predetermined regions on the base layer 11, and a first insulating layer 14 is provided in a region other than the region where the electrode 15 is provided. In addition, a plurality of first wirings 16 are provided on the first insulating layer 14, and the specific first wiring 16 among the plurality of first wirings 16 is a part of the plurality of electrodes 15. And are electrically connected. In addition, a specific electrode 15 among the plurality of electrodes 15 is electrically connected to the other end portion of the through electrode 12. A second insulating layer 18 is provided on the first insulating layer 14 so as to cover part of the through electrode 12 and the first wiring 16. A part of the first wiring 16 is exposed from a part of the second insulating layer 18 to form a land part 17. A second wiring 19 is provided on the land portion 17, and the land portion 17 (first wiring 16) and the second wiring 19 are electrically connected. A bump 20 is provided on the second wiring 19 as a connection terminal with an external device. The bumps 20 are provided on the second surface 10 </ b> B of the semiconductor substrate 10, and the SAW package 1 is electrically connected to the printed wiring board P that is an external device via the bumps 20.

<Method for Manufacturing Surface Acoustic Wave Device>
Next, a method for manufacturing a SAW package will be described with reference to FIGS. Here, in the present embodiment, a plurality of SAW packages 1 (see FIG. 12) are simultaneously formed on the same silicon substrate 100, but for the sake of simplicity, one SAW package 1 is shown in FIGS. The case of forming is shown.

First, as shown in FIG. 2, the base layer 11 is formed on the second surface 10 </ b> B of the semiconductor substrate 10, and the electrode 15 is formed on the base layer 11. Here, an integrated circuit (not shown) including, for example, a transistor, a memory element, and other electronic elements is formed on the second surface 10B of the semiconductor substrate 10. The underlayer 11 is an insulating layer and is formed of a silicon (Si) oxide film (SiO 2). The electrode 15 is electrically connected to the integrated circuit and is made of titanium (Ti), titanium nitride (TiN), aluminum (Al), copper (Cu), or the like. A first insulating layer 14 is provided so as to cover the base layer 11 and the electrode 15.
The first insulating layer 14 can be formed of polyimide resin, silicon-modified polyimide resin, epoxy resin, silicon-modified epoxy resin, acrylic resin, phenol resin, benzocyclobutene (BCB), polybenzoxazole (PBO), or the like. Alternatively, the first insulating layer 14 may be formed of other materials such as silicon oxide (SiO 2) and silicon nitride (SiN) as long as they have insulating properties.

Next, a photoresist (not shown) is applied on the entire surface of the first insulating layer 14 by spin coating or the like. Then, after an exposure process is performed using a mask on which a predetermined pattern is formed, a development process is performed. Thereby, the photoresist is patterned into a predetermined shape.
Then, an etching process is performed, and in the drawing, a part of the first insulating layer 14 covering the right electrode 15 is removed to form an opening. Next, of the plurality of electrodes 15, a part of the right electrode 15 in the drawing is opened by dry etching using the photoresist on the first insulating layer 14 in which the opening is formed as a mask. Further, the underlying layer 11 corresponding to the opening and the semiconductor substrate 10 are partially removed by etching. Thereby, as shown in FIG. 3, a hole 12H is formed in a part of the semiconductor substrate 10 on the second surface 10B side.

  Next, the insulating film 13 is formed on the first insulating layer 14 and on the inner wall and bottom surface of the hole 12H. The insulating film 13 is provided to prevent the occurrence of current leakage, erosion of the semiconductor substrate 10 due to oxygen, moisture, etc., and is formed by using tetraethyl silicate (Tetra Ethyl Ortho) formed by PECVD (Plasma Enhanced Chemical Vapor Deposition). Silicate: Si (OC2H5) 4: hereinafter referred to as TEOS), that is, PE-TEOS and TEOS formed using ozone CVD, that is, O3-TEOS, or silicon oxide (SiO2) formed using CVD are used. Can do. The insulating film 13 may be other material or resin as long as it has insulating properties. For the sake of simplicity, the illustration of the insulating film 13 provided on the first insulating layer 14 is omitted. Then, by removing the insulating film 13 and the first insulating layer 14 provided on the electrode 15 by etching, a form as shown in FIG. 4 is obtained.

  Next, using an electrochemical plating (ECP) method, the inside of the hole 12H and the electrode 15 are plated, and a conductive material for forming the through electrode 12 is formed inside the hole 12H. Be placed. As a conductive material for forming the through electrode 12, for example, copper (Cu) can be used, and copper (Cu) is embedded in the hole 12H. Thereby, the penetrating electrode 12 having a shape protruding on the electrode 15 is formed, and a form as shown in FIG. 5 is obtained. The step of forming the through electrode 12 in the present embodiment includes a step of forming (stacking) TiN and Cu by a sputtering method and a step of forming Cu by a plating method. In addition, the process of forming (stacking) TiW and Cu by a sputtering method and the process of forming Cu by a plating method may be included. The method for forming the through electrode 12 is not limited to the above-described method, and a conductive paste, molten metal, metal wire, or the like may be embedded.

  Next, as shown in FIG. 6, a plurality of first wirings 16 are formed on the first insulating layer 14. Among the plurality of first wirings 16, some of the first wirings 16 are formed so as to be electrically connected to the left electrode 15 in the drawing. The first wiring 16 includes copper (Cu), chromium (Cr), titanium (Ti), nickel (Ni), titanium tungsten (TiW), gold (Au), silver (Ag), aluminum (Al), nickel vanadium ( It is made of a material containing at least one of NiV), tungsten (W), titanium nitride (TiN), and Pb (lead). Further, the first wiring may be formed by stacking at least two of these materials. The step of forming the first wiring 16 in the present embodiment includes a step of forming by the sputtering method in the order of TiW, Cu, and TiW. In addition, the process of forming by the sputtering method in order of TiW and Cu and the process of forming Cu by the plating method may be included.

  Next, as shown in FIG. 7, a second insulating layer 18 is provided so as to cover the through electrode 12, the first wiring 16, and the first insulating layer 14. The second insulating layer 18 can be formed of polyimide resin, silicon-modified polyimide resin, epoxy resin, silicon-modified epoxy resin, acrylic resin, phenol resin, benzocyclobutene (BCB), polybenzoxazole (PBO), or the like. Alternatively, the second insulating layer 18 may be formed of silicon oxide (SiO 2), silicon nitride (SiN), or the like. The second insulating layer 18 may be another material as long as it has insulating properties.

  Next, a region of the second insulating layer 18 corresponding to the land portion 17 is removed, and a part of the first wiring 16 is exposed to form the land portion 17. Note that, when the region corresponding to the land portion 17 in the second insulating layer 18 is removed, a photolithography method including an exposure process and a development process can be used. And the 2nd wiring 19 is formed on the 2nd insulating layer 18 so that it may connect with the land part 17, and a form as shown in FIG. 8 is obtained.

Next, a glass plate (not shown) is attached to the second surface 10B side of the semiconductor substrate 10 with an adhesive that can be peeled off by irradiation with ultraviolet light (UV light). This glass plate is a part of what is called WSS (Wafer Support System), and the semiconductor substrate 10 is supported by the glass plate. Then, a predetermined process such as a polishing process, a dry etching process, or a wet etching process is performed on the first surface 10A of the semiconductor substrate 10 with the glass plate attached.
As a result, as shown in FIG. 9, the semiconductor substrate 10 is thinned, and one end portion of the through electrode 12 is exposed from the first surface 10A.

  Next, as shown in FIG. 10, the SAW element 50 is formed on the first surface 10 </ b> A side of the semiconductor substrate 10. The step of forming the SAW element 50 includes a step of forming a piezoelectric thin film, a step of forming a comb electrode in contact with the piezoelectric thin film, and a step of forming a protective film. Further, the step of forming the SAW element 50 includes a step of adjusting the frequency by irradiating the SAW element 50 with plasma or the like. Examples of the material for forming the piezoelectric thin film include zinc oxide (ZnO), aluminum nitride (AlN), lithium niobate (LiNbO3), lithium tantalate (LiTaO3), and potassium niobate (KNbO3). Examples of the material for forming the comb electrode include metals including aluminum. Examples of the material for forming the protective film include silicon oxide (SiO2), silicon nitride (Si3N4), and titanium nitride (TiN). The formed SAW element 50 is electrically connected to one end of the through electrode 12 exposed on the first surface 10A side.

  Next, an adhesive for forming the adhesive layer 30 is provided on at least one of the first surface 10A of the semiconductor substrate 10 and the third surface 40A of the sealing member 40. As the adhesive layer 30, for example, a photosensitive polyimide adhesive or the like can be used. Then, the semiconductor substrate 10 and the sealing member 40 are bonded via the adhesive layer 30 so that the first surface 10A of the semiconductor substrate 10 and the third surface 40A of the sealing member 40 face each other. . Thereby, a form as shown in FIG. 11 is obtained. Here, the sealing may be a vacuum sealing that evacuates the internal space 60, a gas replacement sealing that replaces the internal space 60 with a predetermined gas such as N 2, Ar, or He. When joining the semiconductor substrate 10 and the sealing member 40, metal protrusions are provided along the peripheral edge of the first surface 10 </ b> A of the semiconductor substrate 10, and the metal protrusions are provided on the third surface 40 </ b> A of the sealing member 40. A metal layer for bonding may be provided, and the semiconductor substrate 10 and the sealing member 40 may be bonded via the metal protrusion and the metal layer. When glass is used for the sealing member 40, the SAW frequency can be adjusted with a laser or the like after sealing. And after peeling the glass plate which comprises the said WSS from the semiconductor substrate 10, the bump 20 which consists of lead-free solder, for example on the 2nd wiring 19 provided in the 2nd surface 10B side of the semiconductor substrate 10 is mounted. . When the bumps 20 are provided, the solder ball may be mounted on the second wiring 19 or the solder paste may be printed on the second wiring 19.

  By the way, as described above, in the process described with reference to FIGS. 2 to 11, a plurality of SAW elements 50, corresponding electrodes 15, sealing members 40, and the like are provided on the same silicon substrate 100 at substantially the same time. This is a configuration in which a plurality of SAW packages 1 are formed on one silicon substrate 100. Therefore, after the step shown in FIG. 11, as shown in FIG. 12, the silicon substrate 100 is diced (cut) for each SAW element 50 (for each SAW package 1) by the dicing apparatus 110. Thereby, the SAW package 1 can be manufactured at low cost. The manufactured SAW package 1 is mounted on a printed wiring board P or the like via bumps 20. In this embodiment, dicing is performed in the final process, but it may be divided into pieces in an appropriate process (intermediate process).

  As described above, the SAW element 50 is provided on the first surface 10A side of the semiconductor substrate 10, and the SAW element 50 is connected to the through electrode 12 that penetrates the first surface 10A and the second surface 10B. By providing an integrated circuit for driving and controlling the SAW element 50 on the second surface 10 </ b> B of the substrate 10, the SAW element 50 and the integrated circuit can be electrically connected via the through electrode 12. Therefore, the SAW element 50 can be driven satisfactorily while realizing a reduction in size and thickness of the entire SAW package 1. Since the SAW element 50 is sealed between the first surface 10A by the sealing member 40, the SAW element 50 can be satisfactorily sealed while realizing a reduction in size and thickness. 50 can be driven well.

<Surface Acoustic Wave Device (Second Embodiment)>
A second embodiment of the SAW package 1 will be described with reference to FIG. Here, in the following description, the same or equivalent components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

A characteristic part of the present embodiment is that the SAW element 50 is not formed on the first surface 10A of the semiconductor substrate 10, but on the third surface 40A of the sealing member 40 facing the first surface 10A. The first surface 10A is provided apart from the first surface 10A. In the present embodiment, by providing the SAW element 50 on a member different from the semiconductor substrate 10, it is difficult to be affected by thermal stress and film stress applied to the semiconductor substrate 10, so that favorable characteristics can be obtained. In this case, the sealing member 40 is composed of a silicon substrate, a quartz substrate, a substrate including silicon and diamond. Then, the SAW element 50 is formed in advance on the third surface 40A of the sealing member 40, and then one end portion of the through electrode 12 provided so as to protrude from the first surface 10A of the semiconductor substrate 10, The semiconductor substrate 10 and the sealing member 40 are bonded via the adhesive layer 30 so that the terminal 51 of the SAW element 50 formed on the third surface 40A of the sealing member 40 is electrically connected. The
One end portion of the through electrode 12 and the terminal 51 are preferably provided with a surface treatment such as gold or a brazing material on the surface so as to facilitate metal connection. Alternatively, the one end portion of the through electrode 12 and the terminal 51 may be pressed by contraction of the adhesive layer 30. In addition, when forming the SAW element 50 on the sealing member 40, after providing a plurality of SAW elements 50 in advance on a large silicon substrate for forming the sealing member 40, each SAW element 50 is formed. A configuration for cutting (dicing) can be adopted. Also in this embodiment, in addition to the form of dicing in the final process, it may be separated into pieces in an appropriate process (intermediate process).

  In addition, when the sealing member 40 is comprised by the glass substrate, when dicing (cutting | disconnecting) the sealing member 40 which consists of the glass substrate, it can also dice with the dicing apparatus 110 demonstrated with reference to FIG. In addition, dicing can be performed by irradiating a laser, or dicing can be performed using a dry etching or wet etching technique.

<Surface Acoustic Wave Device (Third Embodiment)>
FIG. 14 is a diagram showing a third embodiment of the SAW package 1. A characteristic part in the present embodiment is that the SAW element 50 is provided on the second substrate 80 provided between the first surface 10A of the semiconductor substrate 10 and the sealing member 40. Also in the present embodiment, by providing the SAW element 50 on a member different from the semiconductor substrate 10, it is difficult to be affected by thermal stress and film stress applied to the semiconductor substrate 10, so that good characteristics can be obtained. The SAW element 50 is provided on the surface 80A of the second substrate 80 that faces the first surface 10A of the semiconductor substrate 10. The second substrate 80 is constituted by a silicon substrate, a quartz substrate, and a substrate including silicon and diamond. In the case of forming the SAW element 50 on the second substrate 80, a plurality of SAW elements 50 are provided in advance on a large silicon substrate for forming the second substrate 80, and then each SAW element 50 formed is cut ( Dicing) can be adopted. Also in this embodiment, in addition to the form of dicing in the final process, it may be separated into pieces in an appropriate process (intermediate process). Then, one end of the through electrode 12 provided so as to protrude from the first surface 10A of the semiconductor substrate 10 and the terminal 51 of the SAW element 50 formed on the surface 80A of the second substrate 80 are electrically connected. Connected. Also in the present embodiment, it is preferable that the one end portion of the through electrode 12 and the terminal 51 are provided with a surface treatment such as gold or a brazing material on the surface so as to facilitate metal connection. Alternatively, the one end portion of the through electrode 12 and the terminal 51 may be pressed by contraction of the adhesive layer 30. Thereafter, the semiconductor substrate 10 and the sealing member 40 are joined via the adhesive layer 30, and the SAW element 50 is provided in the internal space 60 surrounded by the semiconductor substrate 10, the sealing member 40, and the adhesive layer 30. A second substrate 80 is disposed.

  In the first to third embodiments described above, the case where the electronic element is applied to a surface acoustic wave element has been described as an example. However, the electronic element is not limited to a surface acoustic wave element, and is sealed. For example, a crystal resonator, a piezoelectric resonator, a piezoelectric tuning fork, or the like may be used.

<Electrical equipment>
FIG. 15 is a diagram illustrating an example of an electronic device on which the above-described SAW package 1 is mounted, and is a diagram illustrating a mobile phone 300. Since the SAW package 1 of the present invention that has been downsized and thinned is mounted, the mobile phone 300 that has been downsized can be realized.

DESCRIPTION OF SYMBOLS 1 ... Surface acoustic wave apparatus (electronic component, SAW package), 10 ... Semiconductor substrate, 10A ... 1st surface, 10B ... 2nd surface, 12 ... Through-electrode, 20 ... Bump (connection terminal), 40 ... Sealing member ( (Second member), 40A ... third surface, 50 ... surface acoustic wave element (electronic element, SAW element), 80 ... second substrate (second member), 80A ... surface (third surface), 300 ... mobile phone ( Electronic equipment), P ... Printed wiring board (circuit board)

Claims (6)

A semiconductor substrate having a first surface and a second surface opposite to the first surface;
An electronic element provided in front Symbol first surface,
An integrated circuit provided before Symbol second surface,
A through electrode penetrating the second surface to the first surface,
An electrode being electrically connected, provided in front Symbol second side to the integrated circuit,
An insulating layer provided to cover at least the integrated circuit;
An external electrode provided on the insulating layer,
An end of the through electrode on the first surface side is electrically connected to the electronic element,
An end portion on the second surface side of the through electrode is laminated and electrically connected to the electrode ,
The electronic component , wherein the through electrode is provided on a side closer to the outer periphery of the semiconductor substrate than the center of the external electrode and the integrated circuit when viewed from the surface direction of the semiconductor substrate . A semiconductor substrate having a first surface and a second surface opposite to the first surface;
An integrated circuit provided before Symbol second surface,
A sealing member having a third surface facing away from the first surface;
A through electrode penetrating from the first surface to the second surface,
An electrode being electrically connected, provided in front Symbol second side to the integrated circuit,
An insulating layer provided to cover at least the integrated circuit;
An external electrode provided on the insulating layer;
Provided in front Symbol third surface, and an electronic element sealed between the front Symbol first side and front Symbol third surface,
An end on the first surface side of the through electrode protruding from the first surface is electrically connected to the electronic element,
An end portion on the second surface side of the through electrode is laminated and electrically connected to the electrode ,
The electronic component , wherein the through electrode is provided closer to the outer periphery of the semiconductor substrate than the center of the external electrode and the integrated circuit when viewed from the surface direction of the semiconductor substrate . The insulating film is provided on the inner wall of the through hole,
3. The electronic component according to claim 1 , wherein the through electrode has a conductive material filled inside the insulating film .   The electronic component according to claim 3, wherein the insulating film is a resin film.   The circuit board by which the electronic component as described in any one of Claims 1-4 was mounted.   The electronic device which has an electronic component as described in any one of Claims 1-4.

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