JP2003078389A - Surface acoustic wave device and its manufacturing method - Google Patents

Surface acoustic wave device and its manufacturing method

Info

Publication number
JP2003078389A
JP2003078389A JP2001263254A JP2001263254A JP2003078389A JP 2003078389 A JP2003078389 A JP 2003078389A JP 2001263254 A JP2001263254 A JP 2001263254A JP 2001263254 A JP2001263254 A JP 2001263254A JP 2003078389 A JP2003078389 A JP 2003078389A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
frame
pad electrode
shaped member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001263254A
Other languages
Japanese (ja)
Inventor
Eiji Tanatsugi
英次 棚次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001263254A priority Critical patent/JP2003078389A/en
Publication of JP2003078389A publication Critical patent/JP2003078389A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve the problem that such a structure that a circuit board is larger than a surface acoustic wave element and hardly made small-sized, and the surface acoustic wave element and board are airtightly sealed with a continuous annular sealing member, makes the external appearance worse and decreases airtightness. SOLUTION: The surface acoustic wave element and circuit board 10 are nearly in the same shape and provided with frame-shaped members 5 and 12 having discontinuous parts 6 and 13 each at leas at one place of the outer circumferential part, and they are put opposite each other and joined and sealed to obtain a surface acoustic wave device in small-sized CSP structure which reduces external appearance defects and has superior airtightness.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は情報通信機器などに
用いられる弾性表面波装置およびその製造方法に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device used for information communication equipment and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、携帯電話に代表される携帯無線端
末は軽薄短小化の傾向にあり、これを実現するために弾
性表面波装置などの使用部品の小型化や表面実装化が要
望されている。
2. Description of the Related Art In recent years, mobile wireless terminals represented by mobile phones have tended to be light, thin, short and small, and in order to realize this, miniaturization and surface mounting of parts such as surface acoustic wave devices have been demanded. There is.

【0003】この要望を満足するために、パッケージ中
に弾性表面波素子を実装し、ワイヤーボンディングした
後、蓋体により封止する構造が知られている。この構造
は弾性表面波素子をパッケージに内蔵、封止する構造で
有るため形状が大きくなり、小型化には不向きと言われ
ている。
In order to satisfy this demand, there is known a structure in which a surface acoustic wave element is mounted in a package, wire-bonded, and then sealed by a lid. Since this structure has a structure in which the surface acoustic wave element is built in and sealed in the package, the shape is large, and it is said that it is not suitable for miniaturization.

【0004】一方この問題を解決する手段として特開平
6−61778号公報に記載された方法が知られてい
る。図5は従来の弾性表面波装置の構成を示す断面図で
ある。
On the other hand, as a means for solving this problem, the method described in Japanese Patent Laid-Open No. 6-61778 is known. FIG. 5 is a sectional view showing the structure of a conventional surface acoustic wave device.

【0005】図5に示すように従来の弾性表面波装置
は、弾性表面波素子60にバンプ61を設け、パッケー
ジ62にフェイスダウン実装し、封止部材63により気
密封止することにより小型の弾性表面波装置を得る方法
が用いられていた。
As shown in FIG. 5, in the conventional surface acoustic wave device, bumps 61 are provided on a surface acoustic wave element 60, a package 62 is mounted facedown, and a sealing member 63 is hermetically sealed to provide a small elastic surface. A method of obtaining a surface wave device has been used.

【0006】[0006]

【発明が解決しようとする課題】しかしながら図5に示
したように、従来のように弾性表面波素子60にバンプ
61を設けパッケージ62にフェイスダウン実装し封止
部材63により気密封止する構造では、封止時にパッケ
ージ62の内圧が高まり封止部材63が外側に膨らみ外
観不良が発生すると共に、弾性表面波素子60に比べパ
ッケージ62の大きさが必ず大きくなることから、これ
以上の小型化は困難であるという課題を有していた。
However, as shown in FIG. 5, in the conventional structure in which the bump 61 is provided on the surface acoustic wave element 60, the package 62 is face-down mounted and the sealing member 63 hermetically seals. In addition, the internal pressure of the package 62 increases at the time of sealing, the sealing member 63 bulges outward, and an appearance defect occurs, and the size of the package 62 is inevitably larger than that of the surface acoustic wave element 60. It had the problem of being difficult.

【0007】本発明は上記従来の課題を解決するもので
あり、封止部材による外観不良をなくし、気密封止する
ことができ、弾性表面波素子の形状に近い小型のCSP
(Chip Size Package)型の弾性表面波装置及びその
製造方法を提供することを目的とするものである。
The present invention solves the above-mentioned problems of the prior art, is capable of eliminating a defective appearance due to a sealing member, hermetically sealing, and a small CSP having a shape similar to that of a surface acoustic wave element.
An object of the present invention is to provide a (Chip Size Package) type surface acoustic wave device and a method for manufacturing the same.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明は以下の構成を有するものである。
In order to achieve the above object, the present invention has the following constitution.

【0009】本発明の請求項1に記載の発明は、圧電基
板に櫛歯状電極と反射器電極と第1のパッド電極を設け
てなる弾性表面波素子と、この弾性表面波素子を実装す
る回路基板とからなり、弾性表面波素子と回路基板を対
向させ、回路基板上で第1のパッド電極と対向する位置
に第2のパッド電極を設け、圧電基板上の櫛歯状電極、
反射器電極及び第1のパッド電極の外周部に少なくとも
一箇所は不連続部を有する第1の枠状部材を配設し、回
路基板上で第1の枠状部材と対向する位置に少なくとも
一箇所は不連続部を有する第2の枠状部材を配設し、第
1のパッド電極と第2のパッド電極どうし及び第1の枠
状部材と第2の枠状部材どうしを相互に接合することに
より電気的に接続すると共に振動空間を形成し、枠状部
材の不連続部を封止したという構成を有しており、これ
により弾性表面波素子と回路基板の大きさが略等しい小
型のCSP型の構造で、枠状部材の不連続部が開放状態
であるため封止時に内圧が上がらず、枠状部材が外側へ
膨れることがないため外観不良を低減することができ、
枠状部材により弾性表面波素子を取り囲むことにより外
界からの影響、例えば高周波の電磁ノイズなどの侵入を
遮断し、気密性に優れた弾性表面波装置を得ることがで
きるという作用効果が得られる。
According to a first aspect of the present invention, a surface acoustic wave element having a comb-shaped electrode, a reflector electrode, and a first pad electrode provided on a piezoelectric substrate, and the surface acoustic wave element are mounted. A circuit board, the surface acoustic wave element and the circuit board are opposed to each other, a second pad electrode is provided on the circuit board at a position opposed to the first pad electrode, and a comb-shaped electrode on the piezoelectric substrate is provided.
A first frame-shaped member having a discontinuous portion is provided at least at one location on the outer peripheral portions of the reflector electrode and the first pad electrode, and at least one position is provided on the circuit board so as to face the first frame-shaped member. A second frame-shaped member having a discontinuous portion is disposed at the location, and the first pad electrode and the second pad electrode are joined to each other and the first frame-shaped member and the second frame-shaped member are joined to each other. It has a structure in which a vibration space is formed by electrically connecting the surface acoustic wave element and a circuit board by sealing the discontinuous portion of the frame-shaped member. With the CSP type structure, since the discontinuous portion of the frame-shaped member is in the open state, the internal pressure does not rise during sealing, and the frame-shaped member does not bulge outward, so that it is possible to reduce appearance defects,
By surrounding the surface acoustic wave element with the frame-shaped member, it is possible to obtain an operation effect that an influence from the outside world, for example, intrusion of high-frequency electromagnetic noise or the like is blocked and a surface acoustic wave device having excellent airtightness can be obtained.

【0010】本発明の請求項2に記載の発明は、第1の
パッド電極の一部は、弾性表面波素子に設けた少なくと
も一箇所は不連続部を有する第1の枠状部材に接続して
いるという構成を有しており、これにより枠状部材の不
連続部が開放状態であるため封止時に内圧が上がらず、
枠状部材が外側へ膨れることがないため外観不良を低減
することができ、これによりパッド電極に接続される部
分の面積を広くすることができるため、例えば圧電基板
が焦電効果により電位を発生させたとしても広い面積の
接続された電極部で電位を分担することにより、静電気
放電などによる破壊を起こりにくくすることができると
いう作用効果が得られる。
According to a second aspect of the present invention, a part of the first pad electrode is connected to a first frame-shaped member having a discontinuous portion provided in at least one location provided on the surface acoustic wave element. The internal pressure does not rise at the time of sealing because the discontinuous portion of the frame-shaped member is in an open state.
Since the frame-shaped member does not bulge outward, it is possible to reduce the appearance defect, and thus it is possible to increase the area of the portion connected to the pad electrode. For example, the piezoelectric substrate generates a potential due to the pyroelectric effect. Even if it is done, the potential is shared by the connected electrode portions having a large area, so that it is possible to obtain the effect that it is possible to prevent the destruction due to electrostatic discharge or the like from occurring easily.

【0011】本発明の請求項3に記載の発明は、弾性表
面波素子に設けた少なくとも一箇所は不連続部を有する
第1の枠状部材に接続した第1のパッド電極は、弾性表
面波装置のアース端子に接続してなるという構成を有し
ており、これによりアース端子に接続される部分の面積
を広くすることができるため、例えば圧電基板が焦電効
果により電位を発生させたとしても広い面積の共通アー
スで電位を分担することにより、静電気放電などによる
破壊を起こりにくくすることができるという作用効果が
得られる。
According to a third aspect of the present invention, in the surface acoustic wave device, the first pad electrode connected to the first frame-shaped member having at least one discontinuous portion is a surface acoustic wave. It has a structure in which it is connected to the ground terminal of the device, which makes it possible to increase the area of the portion connected to the ground terminal. For example, if the piezoelectric substrate generates a potential due to the pyroelectric effect, By sharing the potential with a common ground having a large area, it is possible to obtain the effect that it is possible to prevent the destruction due to electrostatic discharge or the like from occurring easily.

【0012】本発明の請求項4に記載の発明は、第2の
パッド電極の一部は、回路基板上に設けた少なくとも一
箇所は不連続部を有する第2の枠状部材に接続してなる
という構成を有しており、これによりアース端子に接続
される部分の面積を広くすることができるため、例えば
圧電基板が焦電効果により電位を発生させたとしても広
い面積の共通アースで電位を分担することにより、静電
気放電などによる破壊を起こりにくくすることができる
という作用効果が得られる。
According to a fourth aspect of the present invention, a part of the second pad electrode is connected to a second frame-shaped member provided on the circuit board and having a discontinuous portion at least at one location. Since the area of the part connected to the ground terminal can be widened by this, even if the piezoelectric substrate generates a potential by the pyroelectric effect, for example, a common ground of a large area can reduce the potential. By sharing the above, it is possible to obtain an effect that it is possible to prevent the destruction due to electrostatic discharge or the like from occurring easily.

【0013】本発明の請求項5に記載の発明は、回路基
板に設けた少なくとも一箇所は不連続部を有する第2の
枠状部材に接続している第2のパッド電極は、アース端
子に接続してなるという構成を有しており、これにより
アース端子に接続される部分の面積を広くすることがで
きるため、例えば圧電基板が焦電効果により電位を発生
させたとしても広い面積の共通アースで電位を分担する
ことにより、静電気放電などによる破壊を起こりにくく
することができるという作用効果が得られる。
According to a fifth aspect of the present invention, the second pad electrode connected to the second frame-shaped member having at least one discontinuous portion provided on the circuit board is connected to the ground terminal. Since the area connected to the ground terminal can be widened by this configuration, even if the piezoelectric substrate generates a potential due to the pyroelectric effect, a large area can be shared. By sharing the potential with the ground, it is possible to obtain the effect that it is possible to prevent the destruction due to electrostatic discharge or the like from occurring easily.

【0014】本発明の請求項6に記載の発明は、第1及
び第2の枠状部材は金属であるという構成を有してお
り、これにより金属を加熱することにより容易に接合、
封止することができるという作用効果が得られる。
The invention according to claim 6 of the present invention has a structure in which the first and second frame-shaped members are made of metal, which facilitates joining by heating the metal,
The effect that it can be sealed is obtained.

【0015】本発明の請求項7に記載の発明は、金属は
少なくともAl、Al合金、Tiのいずれかであるとい
う構成を有しており、これにより弾性表面波素子の櫛歯
状電極、反射器電極と同じプロセスで同時に作製するこ
とができるという作用効果が得られる。
The invention according to claim 7 of the present invention has a structure in which the metal is at least one of Al, Al alloy, and Ti, whereby the comb-teeth-shaped electrode of the surface acoustic wave element and the reflection are formed. It is possible to obtain the function and effect that it can be manufactured at the same time in the same process as that of the container electrode.

【0016】本発明の請求項8に記載の発明は、第2の
枠状部材は少なくともW、Agのいずれかであるという
構成を有しており、これにより回路基板と同時に作製す
ることができるという作用効果が得られる。
The invention according to claim 8 of the present invention has a structure in which the second frame-shaped member is at least W or Ag, and thus can be manufactured simultaneously with the circuit board. The effect is obtained.

【0017】本発明の請求項9に記載の発明は、第1の
パッド電極上に第1の接続部材を設け、第2のパッド電
極上に第2の接続部材を設けたという構成を有してお
り、これにより第1及び第2のパッド電極を容易にかつ
確実に接合することができるという作用効果が得られ
る。
The invention according to claim 9 of the present invention has a structure in which the first connecting member is provided on the first pad electrode and the second connecting member is provided on the second pad electrode. As a result, it is possible to obtain the effect that the first and second pad electrodes can be bonded easily and reliably.

【0018】本発明の請求項10に記載の発明は、第1
及び第2の接続部材は金属であるという構成を有してお
り、これにより金属を加熱することにより容易に接合、
封止することができるという作用効果が得られる。
The invention according to claim 10 of the present invention is the first
And the second connecting member is made of metal, which allows the metal to be easily joined by heating,
The effect that it can be sealed is obtained.

【0019】本発明の請求項11に記載の発明は、金属
は少なくともNi、Au、Au−Sn、Au−Sn−他
の金属との合金、Au−Pt、Au−Pt−他の金属と
の合金、Pb−Sn半田のいずれかであるという構成を
有しており、これによりこれらの金属を加熱することに
より容易に接合、封止することにより、耐湿性などの耐
候性に優れた弾性表面波装置を得ることができるという
作用効果が得られる。
In the invention according to claim 11 of the present invention, the metal is at least Ni, Au, Au-Sn, Au-Sn-an alloy with another metal, Au-Pt, Au-Pt-with another metal. An elastic surface having excellent weather resistance such as humidity resistance by having a structure of being either an alloy or Pb-Sn solder, and by easily bonding and sealing these metals by heating them. The effect that a wave device can be obtained is obtained.

【0020】本発明の請求項12に記載の発明は、弾性
表面波素子の第1のパッド電極と少なくとも一箇所は不
連続部を有する第1の枠状部材の間に、前記第1の枠状
部材の流動を止めるための第1の流動阻止パターンを設
けたという構成を有しており、これにより第1の枠状部
材が接合時の加熱により溶融状態になって流動したとし
ても第1のパッド電極に到達する前に第1の流動阻止パ
ターンにより堰き止められるため、第1の枠状部材が弾
性表面波素子の周辺部に存在し、弾性表面波素子と回路
基板の接合及び封止性を高めることができるという作用
効果が得られる。
According to a twelfth aspect of the present invention, the first frame electrode is provided between the first pad electrode of the surface acoustic wave element and the first frame-shaped member having at least one discontinuous portion. The first flow-blocking pattern for stopping the flow of the member is provided, so that even if the first frame-shaped member is melted by the heating at the time of joining and flows. Since it is blocked by the first flow blocking pattern before it reaches the pad electrode of, the first frame-shaped member is present in the peripheral portion of the surface acoustic wave element, and the surface acoustic wave element and the circuit board are joined and sealed. The effect that the property can be enhanced is obtained.

【0021】本発明の請求項13に記載の発明は、第1
の流動阻止パターンは両端の接続部が狭く接続部の間を
広くしたものであるという構成を有しており、これによ
り第1の枠状部材が流動して第1の流動阻止パターンに
流入すると、狭い部分から広い部分に流入することによ
り流動が一旦周囲へ拡散され、再度狭くなる部分で流動
が堰き止められるため、溶融した第1の枠状部材が第1
の流動阻止パターンより弾性表面波素子側へ流入するこ
とを阻止でき、弾性表面波素子の特性変動を抑制するこ
とができるという作用効果が得られる。
The invention according to claim 13 of the present invention is the first aspect.
Has a structure in which the connecting portions at both ends are narrow and the space between the connecting portions is wide, so that when the first frame-shaped member flows and flows into the first flow inhibiting pattern. , The flow is once diffused to the surroundings by flowing from the narrow portion to the wide portion, and the flow is dammed at the narrowing portion again, so that the molten first frame-shaped member is
It is possible to prevent the inflow to the surface acoustic wave element side from the flow prevention pattern of, and to suppress the characteristic variation of the surface acoustic wave element.

【0022】本発明の請求項14に記載の発明は、弾性
表面波素子の櫛歯状電極と第1のパッド電極の間に、第
1の接続部材の流動を止めるための第2の流動阻止パタ
ーンを設けたという構成を有しており、これにより第1
の接続部材が接合時の加熱により溶融状態になって流動
したとしても櫛歯状電極に接触する前に第1の流動阻止
パターンにより堰き止められるため、ショートや特性の
劣化をなくすことができるという作用効果が得られる。
According to a fourteenth aspect of the present invention, there is provided a second flow blocking member for stopping the flow of the first connecting member between the comb-shaped electrode of the surface acoustic wave element and the first pad electrode. It has a structure in which a pattern is provided.
Even if the connecting member is melted and flows due to heating at the time of joining, it is blocked by the first flow prevention pattern before coming into contact with the comb-shaped electrode, so that short circuit and deterioration of characteristics can be eliminated. The effect is obtained.

【0023】本発明の請求項15に記載の発明は、第2
の流動阻止パターンは、両端の接続部が狭く接続部の間
を広くしたものであるという構成を有しており、これに
より第1の枠状部材が溶融して第2の流動阻止パターン
に流入すると、狭い部分から広い部分に流入することに
より流動が一旦周囲へ拡散され、再度狭くなる部分で流
動が堰き止められるため、溶融した第1の枠状部材が第
2の流動阻止パターンより弾性表面波素子側へ流入する
ことを阻止でき、弾性表面波素子の特性変動を抑制する
ことができるという作用効果が得られる。
The invention according to claim 15 of the present invention is the second aspect.
Has a structure in which the connection portions at both ends are narrow and the space between the connection portions is wide, whereby the first frame-shaped member melts and flows into the second flow inhibition pattern. Then, by flowing from the narrow portion to the wide portion, the flow is once diffused to the surroundings, and the flow is dammed at the narrowing portion again, so that the melted first frame-shaped member has an elastic surface more than the second flow blocking pattern. It is possible to prevent the inflow to the wave element side and suppress the characteristic variation of the surface acoustic wave element.

【0024】本発明の請求項16に記載の発明は、第1
及び第2のパッド電極、第1及び第2の枠状部材は熱圧
着により相互に接続したという構成を有しており、これ
により簡単な方法で確実に接合することができるととも
に、接合状態が金属間接合であるため安定しているた
め、耐久性、耐候性に優れているという作用効果が得ら
れる。
The invention according to claim 16 of the present invention is the first aspect.
The second pad electrode and the first and second frame-shaped members are connected to each other by thermocompression bonding, which makes it possible to surely bond them by a simple method and Since it is a metal-to-metal joint, it is stable, so that the effect of excellent durability and weather resistance can be obtained.

【0025】本発明の請求項17に記載の発明は、1つ
の弾性表面波素子を少なくとも一箇所は不連続部を有す
る1つの第1の枠状部材により囲み、それらを複数組み
合わせたという構成を有しており、これにより個々の弾
性表面波素子が必ず枠状部材で囲まれることから、封止
性能を高めることができると共に金属製の枠状部材を用
いることにより周囲からの電磁波やノイズが内部に侵入
するのを遮断し、特性を安定化することができるという
作用効果が得られる。
According to a seventeenth aspect of the present invention, one surface acoustic wave element is surrounded by at least one first frame-shaped member having a discontinuous portion, and a plurality of them are combined. Since each surface acoustic wave element is always surrounded by the frame-shaped member, the sealing performance can be improved and electromagnetic waves and noise from the surroundings can be reduced by using the metal frame-shaped member. It is possible to obtain the effect of blocking the invasion into the inside and stabilizing the characteristics.

【0026】本発明の請求項18に記載の発明は、少な
くとも圧電基板及び回路基板に設けた少なくとも一箇所
は不連続部を有する第1及び第2の枠状部材の不連続部
を第3の接続部材で接続及び封止したという構成を有し
ており、これにより第2の枠状部材の不連続部を外部端
子と接続し、例えばアース端子とすることによりアース
の状態を安定化することができるため、特性を安定化す
ることができると共に、第2の枠状部材の不連続部を第
3の接続部材で接続、封止することにより封止性能を高
めることができるため、耐候性、耐久性を向上させるこ
とができるという作用効果が得られる。
According to the eighteenth aspect of the present invention, at least one portion provided on at least the piezoelectric substrate and the circuit board has a discontinuous portion, and the discontinuous portion of the first and second frame-shaped members has a third discontinuous portion. It has a structure in which it is connected and sealed by a connecting member, whereby the discontinuous portion of the second frame-shaped member is connected to an external terminal, and for example, it is used as a ground terminal to stabilize the ground state. Therefore, the characteristics can be stabilized, and the sealing performance can be improved by connecting and sealing the discontinuous portion of the second frame-shaped member with the third connecting member, so that the weather resistance can be improved. Thus, the effect of improving durability can be obtained.

【0027】本発明の請求項19に記載の発明は、第3
の接続部材は金属を含むものであるという構成を有して
おり、これにより第2の枠状部材の不連続部を第3の接
続部材で電気的に接続すると共に封止することができる
ため、枠状部材と外部端子を電気的に接続し、耐候性、
耐久性を向上させることができるという作用効果が得ら
れる。
The invention according to claim 19 of the present invention is the third aspect.
The connecting member of No. 2 has a structure containing a metal, whereby the discontinuous portion of the second frame-shaped member can be electrically connected and sealed by the third connecting member. -Shaped member and external terminal are electrically connected, weather resistance,
The effect that the durability can be improved can be obtained.

【0028】本発明の請求項20に記載の発明は、金属
はAu−Sn、Au−Sn−他の金属との合金、Au−
Pt、Au−Pt−他の金属との合金、Pb−Sn半田
のいずれかであるという構成を有しており、これにより
これらの金属又は金属を含む例えば導電性接着剤を加熱
することにより容易に接合、封止することができ、耐湿
性などの耐候性に優れた弾性表面波装置が得られるとい
う作用効果が得られる。
According to a twentieth aspect of the present invention, the metal is Au-Sn, Au-Sn-alloy with other metal, or Au-Sn.
Pt, Au-Pt-an alloy with another metal, or Pb-Sn solder is used, which makes it easy to heat these metals or a metal-containing conductive adhesive, for example. It is possible to obtain a surface acoustic wave device which can be bonded and sealed in a high temperature and is excellent in weather resistance such as moisture resistance.

【0029】本発明の請求項21に記載の発明は、回路
基板の材質はセラミック、ガラス、樹脂のいずれかであ
るという構成を有しており、これにより各種基板材質に
対応した弾性表面波装置を得られるという作用効果が得
られる。
According to a twenty-first aspect of the present invention, the material of the circuit board is any one of ceramic, glass, and resin, which allows the surface acoustic wave device corresponding to various board materials. It is possible to obtain the action and effect.

【0030】本発明の請求項22に記載の発明は、圧電
基板上に櫛歯状電極と反射器電極と第1のパッド電極を
設ける工程と、圧電基板上の櫛歯状電極、反射器電極及
び第1のパッド電極の外周部に少なくとも一箇所は不連
続部を有する第1の枠状部材を形成する工程と、回路基
板に外部電極を設ける工程と、回路基板上で第1のパッ
ド電極と対向する位置に第2のパッド電極を設ける工程
と、回路基板上で第1の枠状部材と対向する位置に少な
くとも一箇所は不連続部を有する第2の枠状部材を設け
る工程と、第1のパッド電極と第2のパッド電極どうし
及び第1の枠状部材と第2の枠状部材どうしを接合する
工程と、不連続部を第3の接続部材で接続、封止する工
程と、個片に切断する工程を含むという方法を有してお
り、これにより弾性表面波素子と回路基板の大きさが略
等しい小型のCSP型の構造で、枠状部材の不連続部が
開放状態であるため封止時に内圧が上がらず、枠状部材
が外側へ膨れることがないため、外観不良を低減すると
共に確実に封止することができるという作用効果が得ら
れる。
According to a twenty-second aspect of the present invention, there is provided a step of providing a comb electrode, a reflector electrode and a first pad electrode on a piezoelectric substrate, a comb electrode and a reflector electrode on the piezoelectric substrate. And a step of forming a first frame-shaped member having a discontinuous portion at least at one location on the outer peripheral portion of the first pad electrode, a step of providing an external electrode on the circuit board, and a first pad electrode on the circuit board. A step of providing a second pad electrode at a position facing the first frame electrode, and a step of providing a second frame-shaped member having a discontinuous portion at least at one position on the circuit board facing the first frame-shaped member, A step of joining the first pad electrode and the second pad electrode, and a step of joining the first frame-shaped member and the second frame-shaped member together, and a step of connecting and sealing the discontinuous portion with the third connecting member. , The process of cutting into individual pieces is included. The surface acoustic wave element and the circuit board are of substantially the same size, and the internal pressure does not rise during sealing because the discontinuous portion of the frame-shaped member is in an open state, and the frame-shaped member may swell outward. Since it is not present, it is possible to obtain the operational effect of reducing the appearance defect and reliably sealing.

【0031】本発明の請求項23に記載の発明は、第1
のパッド電極と第2のパッド電極どうし及び第1の枠状
部材と第2の枠状部材どうしを接合する方法は熱圧着で
あるという方法を有しており、これにより簡単な方法で
確実に接合することができると共に、接合状態が金属間
接合であるため安定しているため、耐久性、耐候性に優
れているという作用効果が得られる。
The invention according to claim 23 of the present invention is the first aspect.
The method of joining the pad electrode and the second pad electrode of the above, and the method of joining the first frame-shaped member and the second frame-shaped member together has a method of thermocompression bonding, which ensures a simple method. In addition to being capable of joining, the joining state is stable because it is a metal-to-metal joining, so that the operational effect of excellent durability and weather resistance can be obtained.

【0032】本発明の請求項24に記載の発明は、圧電
基板に櫛歯状電極と反射器電極と第1のパッド電極を設
けてなる弾性表面波素子と、弾性表面波素子を実装する
回路基板とからなり、弾性表面波素子と回路基板を対向
させ、回路基板上で第1のパッド電極と対向する位置に
第2のパッド電極を設け、第1のパッド電極と第2のパ
ッド電極を接合することにより電気的に接続すると共に
振動空間を形成し、圧電基板上の櫛歯状電極、反射器電
極及び第1のパッド電極の外周部に連続した第3の枠状
部材を配設し、回路基板上で第3の枠状部材と対向する
位置に連続した第4の枠状部材を配設し、減圧下で第1
のパッド電極及び第2のパッド電極どうし、第3及び第
4の枠状部材どうしを相互に接合、封止したという構成
を有しており、これにより弾性表面波素子と回路基板の
大きさが略等しい小型のCSP型の構造で、減圧下で封
止するため内圧が上がらず枠状部材が外側へ膨れること
がないため、外観不良を低減すると共に確実に封止する
ことができるという作用効果が得られる。
According to a twenty-fourth aspect of the present invention, a surface acoustic wave element comprising a piezoelectric substrate provided with comb-teeth electrodes, a reflector electrode and a first pad electrode, and a circuit for mounting the surface acoustic wave element. The surface acoustic wave element and the circuit board are opposed to each other, the second pad electrode is provided on the circuit board at a position opposed to the first pad electrode, and the first pad electrode and the second pad electrode are connected to each other. By connecting them, they are electrically connected and form a vibration space, and a continuous third frame-shaped member is provided on the outer periphery of the comb-teeth-shaped electrode, the reflector electrode and the first pad electrode on the piezoelectric substrate. A continuous fourth frame-shaped member is provided on the circuit board at a position facing the third frame-shaped member,
The pad electrode and the second pad electrode, and the third and fourth frame-shaped members are bonded and sealed to each other, whereby the size of the surface acoustic wave element and the circuit board is reduced. Since the CSP structure is of substantially the same small size, and the sealing is performed under reduced pressure, the internal pressure does not rise and the frame-shaped member does not bulge outward. Therefore, it is possible to reduce defective appearance and surely perform sealing. Is obtained.

【0033】本発明の請求項25に記載の発明は、弾性
表面波素子に設けた第1のパッド電極の一部は、連続す
る第3の枠状部材に接続しているという構成を有してお
り、これにより第1のパッド電極を第3の枠状部材に電
気的に接続し、例えばこれをアースとすることにより電
気的に安定したアースを得ることができるため、特性を
安定化することができるという作用効果が得られる。
According to a twenty-fifth aspect of the present invention, a part of the first pad electrode provided on the surface acoustic wave element is connected to a continuous third frame-shaped member. As a result, an electrically stable ground can be obtained by electrically connecting the first pad electrode to the third frame-shaped member and using this as the ground, thereby stabilizing the characteristics. The effect of being able to do is obtained.

【0034】本発明の請求項26に記載の発明は、弾性
表面波素子に設けた第1のパッド電極のうち、連続する
第3の枠状部材に接続した第1のパッド電極はアース端
子に接続してなるという構成を有しており、これにより
アースの部位を広げることができるため電気的に安定し
たアースを得ることができ、特性を安定化することがで
きるという作用効果が得られる。
In the twenty-sixth aspect of the present invention, of the first pad electrodes provided on the surface acoustic wave element, the first pad electrode connected to the continuous third frame-shaped member is the ground terminal. Since it has a structure of being connected, and thus the grounding portion can be widened, an electrically stable grounding can be obtained, and the characteristic effect can be stabilized.

【0035】本発明の請求項27に記載の発明は、回路
基板に設けた第2のパッド電極の一部は、回路基板上に
設けた連続する第4の枠状部材に接続してなるという構
成を有しており、これにより第2のパッド電極を第4の
枠状部材に電気的に接続し、例えばこれをアースとする
ことにより電気的に安定したアースを得ることができる
ため、特性を安定化することができるという作用効果が
得られる。
According to a twenty-seventh aspect of the present invention, a part of the second pad electrode provided on the circuit board is connected to a continuous fourth frame-shaped member provided on the circuit board. Since the second pad electrode is electrically connected to the fourth frame-shaped member and this is grounded, for example, an electrically stable ground can be obtained. It is possible to obtain the operational effect of being able to stabilize.

【0036】本発明の請求項28に記載の発明は、回路
基板に設けた第2のパッド電極のうち、連続する第4の
枠状部材に接続しているパッド電極はアース端子に接続
してなるという構成を有しており、これによりアースの
部位を広げることができるため電気的に安定したアース
を得ることができ、特性を安定化することができるとい
う作用効果が得られる。
According to a twenty-eighth aspect of the present invention, among the second pad electrodes provided on the circuit board, the pad electrode connected to the continuous fourth frame member is connected to the ground terminal. With this configuration, since the grounding portion can be expanded, an electrically stable grounding can be obtained, and the characteristic effect can be stabilized.

【0037】本発明の請求項29に記載の発明は、第1
及び第2のパッド電極、第3及び第4の枠状部材は熱圧
着により相互に接続したという構成を有しており、これ
により簡単な方法で確実に接合することができるととも
に、接合状態が金属間接合であるため安定しているた
め、耐久性、耐候性に優れているという作用効果が得ら
れる。
The invention according to claim 29 of the present invention is the first
The second pad electrode and the third and fourth frame-shaped members are connected to each other by thermocompression bonding, which enables reliable bonding by a simple method and the bonded state. Since it is a metal-to-metal joint, it is stable, so that the effect of excellent durability and weather resistance can be obtained.

【0038】本発明の請求項30に記載の発明は、第1
及び第2のパッド電極上に第1の接続部材を設けたとい
う構成を有しており、これにより第1及び第2のパッド
電極を容易にかつ確実に接合することができるという作
用効果が得られる。
The invention according to claim 30 of the present invention is the first
And a structure in which the first connecting member is provided on the second pad electrode, which provides an effect that the first and second pad electrodes can be easily and reliably joined together. To be

【0039】本発明の請求項31に記載の発明は、第1
の接続部材は金属であるという構成を有しており、これ
により金属を加熱することにより容易に接合、封止する
ことができるという作用効果が得られる。
The invention according to claim 31 of the present invention is the first aspect.
The connecting member of 1 has a structure of being made of metal, which provides an effect that the metal can be easily joined and sealed by heating.

【0040】本発明の請求項32に記載の発明は、金属
は少なくともNi、Au、Au−Sn、Au−Sn−他
の金属との合金、Au−Pt、Au−Pt−他の金属と
の合金、Pb−Sn半田のいずれかであるという構成を
有しており、これによりこれらの金属を加熱することに
より容易に接合、封止することができ、耐湿性などの耐
候性に優れた弾性表面波装置が得られるという作用効果
が得られる。
According to a thirty-second aspect of the present invention, the metal is at least Ni, Au, Au-Sn, Au-Sn-an alloy with another metal, Au-Pt, Au-Pt-with another metal. It has a structure that it is either an alloy or Pb-Sn solder, and by doing so, it is possible to easily join and seal these metals by heating, and elasticity that is excellent in weather resistance such as moisture resistance. The effect that a surface acoustic wave device is obtained can be obtained.

【0041】本発明の請求項33に記載の発明は、弾性
表面波素子の櫛歯状電極と連続する第3の枠状部材の間
に、第3の枠状部材の流動を止めるための第3の流動阻
止パターンを設けたという構成を有しており、これによ
り第3の枠状部材が接合時の加熱により溶融状態になっ
て流動したとしても櫛歯状電極に接触する前に第3の流
動阻止パターンにより堰き止められるため、ショートや
特性の劣化をなくすことができるという作用効果が得ら
れる。
According to a thirty-third aspect of the present invention, the third frame-shaped member for stopping the flow between the third frame-shaped member continuous with the comb-teeth-shaped electrode of the surface acoustic wave element is provided. 3 has a structure in which the flow prevention pattern 3 is provided, so that even if the third frame-shaped member is melted by the heating at the time of joining and flows, Since it is blocked by the flow prevention pattern of No. 3, there is an effect that a short circuit and deterioration of characteristics can be eliminated.

【0042】本発明の請求項34に記載の発明は、弾性
表面波素子の櫛歯状電極と第1のパッド電極の間に、第
1の接続部材の流動を止めるための第4の流動阻止パタ
ーンを設けたという構成を有しており、これにより第1
の接続部材が接合時の加熱により溶融状態になって流動
したとしても櫛歯状電極に接触する前に第4の流動阻止
パターンにより堰き止められるため、ショートや特性の
劣化をなくすことができるという作用効果が得られる。
According to a thirty-fourth aspect of the present invention, there is provided a fourth flow blocking means for stopping the flow of the first connecting member between the comb-shaped electrode of the surface acoustic wave element and the first pad electrode. It has a structure in which a pattern is provided.
Even if the connecting member is melted by the heating at the time of joining and flows, since it is blocked by the fourth flow prevention pattern before coming into contact with the comb-shaped electrode, it is possible to eliminate a short circuit and deterioration of characteristics. The effect is obtained.

【0043】本発明の請求項35に記載の発明は、1つ
の弾性表面波素子を1つの連続する第3の枠状部材によ
り囲み、それらを複数組み合わせたという構成を有して
おり、これにより個々の弾性表面波素子が必ず枠状部材
で囲まれることから、封止性能を高めることができると
共に金属製の枠状部材を用いることにより周囲からの電
磁波やノイズが内部に侵入するのを遮断し、特性を安定
化することができるという作用効果が得られる。
According to a thirty-fifth aspect of the present invention, one surface acoustic wave element is surrounded by one continuous third frame-shaped member, and a plurality of them are combined together. Since each surface acoustic wave element is always surrounded by a frame-shaped member, it is possible to improve the sealing performance and block electromagnetic waves and noise from the surroundings by using a metal frame-shaped member. However, the effect that the characteristics can be stabilized can be obtained.

【0044】本発明の請求項36に記載の発明は、減圧
下で第1のパッド電極及び第2のパッド電極どうし、第
3及び第4の枠状部材どうしを相互に接合、封止する時
の圧力は大気圧より低くしたという構成を有しており、
これにより大気圧よりも低い圧力下で封止するため加熱
しても大気圧以上に内圧が上がらず、枠状部材が外側へ
膨れることがないため、外観不良を低減すると共に確実
に封止することができるという作用効果が得られる。
According to a thirty-sixth aspect of the present invention, when the first pad electrode and the second pad electrode, and the third and fourth frame-shaped members are bonded and sealed to each other under a reduced pressure. The pressure of is lower than the atmospheric pressure.
As a result, since the sealing is performed under a pressure lower than the atmospheric pressure, the internal pressure does not rise above the atmospheric pressure even when heated, and the frame-shaped member does not bulge outward. The effect of being able to do is obtained.

【0045】本発明の請求項37に記載の発明は、圧電
基板上に櫛歯状電極と反射器電極と第1のパッド電極を
設ける工程と、圧電基板上の櫛歯状電極、反射器電極及
び第1のパッド電極の外周部に連続した第3の枠状部材
を形成する工程と、回路基板に外部電極を設ける工程
と、回路基板上で第1のパッド電極と対向する位置に第
2のパッド電極を設ける工程と、回路基板上で第3の枠
状部材と対向する位置に連続した第4の枠状部材を設け
る工程と、減圧下で第1のパッド電極と第2のパッド電
極どうし及び第3の枠状部材と第4の枠状部材どうしを
接合、封止する工程と、切断する工程を含むという方法
を有しており、これにより弾性表面波素子と回路基板の
大きさが略等しい小型のCSP型の構造で、減圧下で封
止するため内圧が上がらず枠状部材が外側へ膨れること
がないため、外観不良を低減すると共に確実に封止する
ことができるという作用効果が得られる。
According to a thirty-seventh aspect of the present invention, the step of providing a comb-tooth electrode, a reflector electrode and a first pad electrode on a piezoelectric substrate, a comb-tooth electrode and a reflector electrode on the piezoelectric substrate And a step of forming a continuous third frame-shaped member on the outer peripheral portion of the first pad electrode, a step of providing an external electrode on the circuit board, and a second step at a position facing the first pad electrode on the circuit board. The step of providing a pad electrode, the step of providing a continuous fourth frame-shaped member at a position facing the third frame-shaped member on the circuit board, and the first pad electrode and the second pad electrode under reduced pressure. The method includes a step of joining and sealing the third frame-shaped member and the fourth frame-shaped member to each other, and a step of cutting the same. Has a small CSP type structure, and the internal pressure is high because it is sealed under reduced pressure. For Razz frame member is prevented from bulging outward, actions and effects that it is possible to securely seal obtained while reducing the appearance defect.

【0046】[0046]

【発明の実施の形態】(実施の形態1)以下に本発明の
実施の形態1を用いて、本発明の請求項1〜16、18
〜23について説明する。
BEST MODE FOR CARRYING OUT THE INVENTION (Embodiment 1) Hereinafter, Embodiment 1 of the present invention will be used to describe claims 1 to 16 and 18 of the present invention.
23 will be described.

【0047】図1は本実施の形態1における弾性表面波
装置を組み立てる前の斜視図である。
FIG. 1 is a perspective view before assembling the surface acoustic wave device according to the first embodiment.

【0048】図1において、1は圧電基板、2は櫛歯状
電極、3は反射器電極、4は圧電基板1に設けた第1の
パッド電極、5は圧電基板1に設けた第1の枠状部材、
6は第1の枠状部材5に設けた不連続部、7は第1の流
動阻止パターン、8は第2の流動阻止パターン、9は第
1の接続部材、10は回路基板、11は第2のパッド電
極、12は第2の枠状部材、13は第2の枠状部材12
に設けた不連続部、14は回路基板10に設けた第3の
流動阻止パターン、15は第2のパッド電極11に設け
た第2の接続部材、16は回路基板10に設けた切り込
み部、17は不連続部6、13を封止するための第3の
接続部材、18は回路基板10に設けた外部電極、19
は回路基板10に設けた振動空間である。
In FIG. 1, 1 is a piezoelectric substrate, 2 is a comb-shaped electrode, 3 is a reflector electrode, 4 is a first pad electrode provided on the piezoelectric substrate 1, and 5 is a first electrode provided on the piezoelectric substrate 1. Frame-shaped member,
6 is a discontinuous portion provided on the first frame member 5, 7 is a first flow blocking pattern, 8 is a second flow blocking pattern, 9 is a first connecting member, 10 is a circuit board, 11 is a first 2 pad electrodes, 12 is a second frame-shaped member, 13 is a second frame-shaped member 12
, 14 is a third flow blocking pattern provided on the circuit board 10, 15 is a second connecting member provided on the second pad electrode 11, 16 is a notch provided on the circuit board 10, Reference numeral 17 is a third connecting member for sealing the discontinuous portions 6 and 13, 18 is an external electrode provided on the circuit board 10, 19
Is a vibration space provided on the circuit board 10.

【0049】なお、図1は実施の形態1の構成を模式的
に示したものであり、それぞれの厚みや寸法の相対的な
関係を示したものではない。
Note that FIG. 1 schematically shows the configuration of the first embodiment, and does not show the relative relationship between the respective thicknesses and dimensions.

【0050】本発明は、圧電基板1の外周部及びそれに
対向する回路基板10の外周部に、少なくとも一箇所は
不連続部6、13を有する枠状部材5、12を配設し、
相互に接合した後不連続部6、13を封止することによ
り、封止時点では枠状部材5、12の不連続部6、13
が開放状態であるため内圧が上がらず、枠状部材5、1
2が外側へ膨れることがないため外観不良を低減するこ
とができると共に、弾性表面波素子と回路基板10の形
状が略等しい小型のCSP型の弾性表面波装置が構成で
きることに着眼したものである。
According to the present invention, frame-shaped members 5 and 12 having discontinuous portions 6 and 13 are provided at least at one location on the outer peripheral portion of the piezoelectric substrate 1 and the outer peripheral portion of the circuit board 10 facing the piezoelectric substrate 1.
By sealing the discontinuous portions 6 and 13 after bonding them to each other, the discontinuous portions 6 and 13 of the frame-shaped members 5 and 12 are sealed at the time of sealing.
The internal pressure does not rise because the is open, and the frame-shaped members 5, 1
Since 2 does not swell to the outside, it is possible to reduce the appearance failure and to configure a small CSP type surface acoustic wave device in which the surface acoustic wave element and the circuit board 10 have substantially the same shape. .

【0051】以下に具体的な製造工程について説明す
る。
Specific manufacturing steps will be described below.

【0052】LiTaO3などからなるウエハ状の圧電
基板1上にAlなどからなる金属を例えばスパッタリン
グ法などにより所定膜厚の金属膜を形成し、金属膜上に
レジストを塗布し、フォトリソグラフィー法により露光
し、現像し、金属膜をエッチングすることにより所望の
櫛歯状電極2、反射器電極3、第1のパッド電極4、そ
れらの周囲を取り囲むように少なくとも一箇所は不連続
部6を有する枠状部材5、第1の流動阻止パターン7、
第2の流動阻止パターン8を形成する。
A metal film made of Al or the like is formed on the piezoelectric substrate 1 in the form of a wafer made of LiTaO 3 or the like to a predetermined thickness by, for example, a sputtering method, a resist is applied on the metal film, and a photolithography method is used. By exposing, developing, and etching the metal film, a desired comb-teeth electrode 2, reflector electrode 3, first pad electrode 4, and at least one discontinuous portion 6 are provided so as to surround them. The frame member 5, the first flow blocking pattern 7,
The second flow blocking pattern 8 is formed.

【0053】さらに、第1のパッド電極4、少なくとも
一箇所は不連続部6を有する枠状部材5、第1の流動阻
止パターン7、第2の流動阻止パターン8の上にスパッ
タリングなどの方法によりAu−Pt−Cuなどからな
る第1の接続部材9を設け、第1のパッド電極4、少な
くとも一箇所は不連続部6を有する枠状部材5、第1の
流動阻止パターン7、第2の流動阻止パターン8を形成
し、弾性表面波素子集合体を得る。
Further, the first pad electrode 4, the frame-shaped member 5 having the discontinuous portion 6 at least at one place, the first flow blocking pattern 7 and the second flow blocking pattern 8 are formed on the first pad electrode 4 by a method such as sputtering. A first connecting member 9 made of Au-Pt-Cu or the like is provided, and a first pad electrode 4, a frame-shaped member 5 having a discontinuous portion 6 at least at one location, a first flow blocking pattern 7, and a second flow inhibiting pattern 7. The flow blocking pattern 8 is formed to obtain a surface acoustic wave element assembly.

【0054】なお、圧電基板1上に設けた櫛歯状電極
2、反射器電極3、第1のパッド電極4の下部を形成す
る金属はAl以外にAl合金、又は、Alと他の金属の
混合物などを単層又は複数層重ねて用いてもかまわな
い。
The metal forming the lower parts of the comb-teeth-shaped electrode 2, the reflector electrode 3 and the first pad electrode 4 provided on the piezoelectric substrate 1 is not only Al but Al alloy, or Al and other metals. A mixture or the like may be used in a single layer or a plurality of layers.

【0055】また、第1の接続部材9は金属を用いた
が、これは加熱することにより容易に溶融し接続するこ
とができるためであり、Au−Pt−Cu以外にAu−
Sn、Au−Sn−他の金属との合金、Au−Pt、A
u−Pt−他の金属との合金、Pb・Sn半田、又はこ
れらの混合物などを単層又は複数層重ねて用いてもかま
わない。
The first connecting member 9 is made of metal because it can be easily melted and connected by heating, and Au-Pt-Cu can be used instead of Au-Pt-Cu.
Sn, Au-Sn-alloy with other metal, Au-Pt, A
u-Pt-an alloy with another metal, Pb / Sn solder, or a mixture thereof may be used in a single layer or a plurality of layers.

【0056】一方、例えばBaO−Al23−SiO2
系のセラミック組成に、BaO−SiO2−PbO系の
ガラス組成を添加したものなどからなるセラミック組成
物を、例えばドクターブレードなどの方法によりシート
成形し、所定の形状に切断し、シートの所定部分にパン
チングなどの方法で貫通穴を開け、シートの所定部分及
び貫通穴にAgなどからなる導電性ペーストを印刷など
の方法により塗布し、シートを所定枚数積層、プレス
し、所定部分に切り込み部16を設け、900℃で焼成
した後所定寸法に切断し、第2のパッド電極11、少な
くとも一箇所は不連続部13を有する第2の枠状部材1
2、第3の流動阻止パターン14、第2のパッド電極1
1に接続され外部電極18に接続した内部配線(図示せ
ず)、外部電極18などの配線を設けた回路基板10を
得る。
On the other hand, for example, BaO--Al 2 O 3 --SiO 2
The ceramic composition of the system, the ceramic composition made of a material obtained by adding glass composition of BaO-SiO 2 -PbO system, for example, a sheet formed by a method such as a doctor blade, and cut into a predetermined shape, a predetermined portion of the sheet A through hole is formed in the sheet by a method such as punching, a conductive paste made of Ag or the like is applied to a predetermined portion of the sheet and the through hole by a method such as printing, and a predetermined number of sheets are laminated and pressed, and a cut portion 16 is formed in the predetermined portion. , The second pad electrode 11, and the second frame-shaped member 1 having the discontinuous portion 13 at least at one location.
2, third flow blocking pattern 14, second pad electrode 1
The circuit board 10 provided with the internal wiring (not shown) connected to the external electrode 18 and the external electrode 18, etc. is provided.

【0057】次に、第2のパッド電極11、少なくとも
一箇所は不連続部13を有する第2の枠状部材12、第
3の流動阻止パターン14の上にNi、Au、Pb・S
nなどの金属膜をメッキなどの方法で順に重ねて第2の
接続部材15を形成し、第2のパッド電極11、少なく
とも一箇所は不連続部13を有する第2の枠状部材1
2、第3の流動阻止パターン14を設けた回路基板集合
体を得る。
Next, on the second pad electrode 11, the second frame-shaped member 12 having the discontinuous portion 13 at least at one place, and the third flow blocking pattern 14, Ni, Au, Pb.S.
A second frame-shaped member 1 having a second connection member 15 and a second pad electrode 11, at least one of which has a discontinuous portion 13, is formed by sequentially stacking metal films such as n by a method such as plating.
2. A circuit board assembly provided with the third flow blocking pattern 14 is obtained.

【0058】なお、回路基板10の組成はBaO−Al
23−SiO2系のLTCC(LowTemperature Cofir
ed Ceramic)系セラミック以外にAl23などを16
00℃程度で高温焼成する組成を用いてもかまわない。
The composition of the circuit board 10 is BaO--Al.
2 O 3 -SiO 2 system LTCC (Low Temperature Cofir)
In addition to ed Ceramic) ceramics, Al 2 O 3 etc. 16
A composition that is fired at a high temperature of about 00 ° C. may be used.

【0059】Al23などの高温焼成する組成を用いた
場合、配線を形成するのに用いる金属としては例えばW
などを用いることが可能であり、焼成温度に合わせて適
切な金属組成を選ぶ必要がある。
When a high temperature firing composition such as Al 2 O 3 is used, the metal used to form the wiring is, for example, W.
Etc. can be used, and it is necessary to select an appropriate metal composition according to the firing temperature.

【0060】なお、第2の接続部材15としては金属を
用いたが、これは加熱することにより容易に溶融し接続
することができるためであり、Ni、Au、Pb・Sn
以外にAu−Sn、Au−Sn−他の金属との合金、A
u−Pt、Au−Pt−他の金属との合金を単層又は複
数層重ねて用いてもかまわない。
A metal is used as the second connecting member 15, but this is because it can be easily melted and connected by heating, and Ni, Au, Pb.Sn are used.
In addition to Au-Sn, Au-Sn-alloys with other metals, A
u-Pt, Au-Pt-an alloy with another metal may be used in a single layer or a plurality of layers.

【0061】なお、回路基板10は切断してから焼成し
てもかまわない。
The circuit board 10 may be cut and then fired.

【0062】また、回路基板10の材質としては、セラ
ミック以外にガラス、樹脂などを用いてもかまわない。
Further, as the material of the circuit board 10, glass, resin or the like may be used in addition to ceramic.

【0063】次に、得られた弾性表面波素子集合体と回
路基板集合体を対向させ、弾性表面波素子集合体に設け
た第1のパッド電極4及び第1の枠状部材5と回路基板
集合体に設けた第2のパッド電極11及び第2の枠状部
材12の位置、不連続部6及び不連続部13の位置を調
整し、回路基板集合体の上に弾性表面波素子集合体を反
転させフェイスダウン状態になるようにして重ね合わ
せ、約1MPaの圧力で押圧して弾性表面波素子集合体
と回路基板集合体の間隔を所定の間隔としながら、35
0℃で5分加熱硬化し、第1の接続部材9及び第2の接
続部材15を溶融することにより対向する第1のパッド
電極4及び第2のパッド電極11、第1の枠状部材5及
び第2の枠状部材12を接合すると共に、振動空間19
を形成し、弾性表面波素子集合体と回路基板集合体を一
体化する。
Next, the obtained surface acoustic wave element assembly and the circuit board assembly are opposed to each other, and the first pad electrode 4 and the first frame-shaped member 5 provided on the surface acoustic wave element assembly and the circuit board. The positions of the second pad electrode 11 and the second frame-shaped member 12 and the positions of the discontinuous portion 6 and the discontinuous portion 13 provided on the aggregate are adjusted so that the surface acoustic wave element aggregate is provided on the circuit board aggregate. Are faced down so as to be in a face-down state, and are pressed with a pressure of about 1 MPa to keep a predetermined distance between the surface acoustic wave element assembly and the circuit board assembly.
The first pad electrode 4 and the second pad electrode 11 and the first frame-shaped member 5 facing each other by heating and curing at 0 ° C. for 5 minutes to melt the first connecting member 9 and the second connecting member 15 And the second frame-shaped member 12 are joined together, and the vibration space 19
And the surface acoustic wave element assembly and the circuit board assembly are integrated.

【0064】このようにしてウエハ状態で弾性表面波素
子集合体を形成することができる。
In this way, the surface acoustic wave element assembly can be formed in a wafer state.

【0065】その後、所定の寸法に例えばダイシング装
置などを用いて切断し、Pb・Snボールなどの導電性
接着剤からなる第3の接続部材17を回路基板10に設
けた切り込み部16に配設し、第1の枠状部材5の不連
続部6及び第2の枠状部材12の不連続部13を接続す
ると共に弾性表面波装置を封止することにより弾性表面
波素子と回路基板10の形状及び大きさが略同一のCS
P型の弾性表面波装置を得る。
After that, it is cut to a predetermined size by using, for example, a dicing device, and a third connecting member 17 made of a conductive adhesive such as Pb / Sn balls is arranged in the cut portion 16 provided in the circuit board 10. Then, by connecting the discontinuous portion 6 of the first frame-shaped member 5 and the discontinuous portion 13 of the second frame-shaped member 12 and sealing the surface acoustic wave device, the surface acoustic wave element and the circuit board 10 are separated. CS with almost the same shape and size
A P-type surface acoustic wave device is obtained.

【0066】なお第3の接続部材17は、弾性表面波素
子集合体と回路基板集合体を一体化したウエハ状態の弾
性表面波素子集合体を切断する前に回路基板10に設け
た切り込み部16に配設し、第1の枠状部材5の不連続
部6及び第2の枠状部材12の不連続部13を接続する
と共に封止し、その後切断してもかまわない。
The third connecting member 17 is a notch 16 provided on the circuit board 10 before cutting the surface acoustic wave element assembly in a wafer state in which the surface acoustic wave element assembly and the circuit board assembly are integrated. The discontinuous portion 6 of the first frame-shaped member 5 and the discontinuous portion 13 of the second frame-shaped member 12 may be connected and sealed, and then cut.

【0067】また、本実施の形態1ではウエハ状態で弾
性表面波素子集合体と回路基板集合体を一体化したが、
弾性表面波素子集合体又は回路基板集合体のどちらか一
方を予め切断しておき、一体化してもかまわない。ま
た、必要が有れば弾性表面波素子集合体及び回路基板集
合体の両方を予め切断し、その後一体化してもかまわな
い。どのような状態で一体化するかは、回路基板集合体
の反りの程度により決まり、反りが小さければウエハ状
態などの大判状態で一体化できるが、反りが大きい場合
は弾性表面波素子集合体と回路基板集合体の間隔が不均
一となり接続性、密封性にばらつきを生じ、ウエハ状態
での一体化は困難となる。
In the first embodiment, the surface acoustic wave element assembly and the circuit board assembly are integrated in the wafer state.
Either the surface acoustic wave element assembly or the circuit board assembly may be previously cut and integrated. If necessary, both the surface acoustic wave element assembly and the circuit board assembly may be cut in advance and then integrated. The state of integration is determined by the degree of warpage of the circuit board assembly. If the warpage is small, it can be integrated in a large size state such as a wafer state, but if the warpage is large, it will be integrated with the surface acoustic wave element assembly. The circuit board aggregates are not evenly spaced, resulting in variations in connectivity and sealing performance, which makes it difficult to integrate them in a wafer state.

【0068】その場合、弾性表面波素子集合体及び/又
は回路基板集合体を切断して一体化することにより反り
を吸収することができる。一体化する領域の反りが2μ
m以内であれば切断せずに一体化することが可能であ
る。
In this case, the warp can be absorbed by cutting and integrating the surface acoustic wave element assembly and / or the circuit board assembly. Warpage of integrated area is 2μ
If it is within m, it can be integrated without cutting.

【0069】ただし、弾性表面波素子集合体又は回路基
板集合体を切断して一体化すると量産性が損なわれるた
め、最終的には回路基板集合体の反りの程度と量産性を
考慮してどのような状態で一体化するかを決める必要が
ある。
However, if the surface acoustic wave element assembly or the circuit board assembly is cut and integrated, the mass productivity is impaired. Therefore, in the end, the degree of warpage of the circuit board assembly and the mass productivity should be taken into consideration. It is necessary to decide whether to integrate in such a state.

【0070】なお、第3の接続部材17で不連続部6及
び13を封止する方法は、スパッタリング、蒸着、印
刷、塗布などどのような方法を用いてもかまわないし、
材質としてはAu−Sn、Au−Sn−他の金属との合
金、Au−Pt、Au−Pt−他の金属との合金または
導電性接着剤などを用いてもかまわない。
The method of sealing the discontinuous portions 6 and 13 with the third connecting member 17 may be any method such as sputtering, vapor deposition, printing or coating.
As the material, Au-Sn, Au-Sn-alloy with other metal, Au-Pt, Au-Pt-alloy with other metal, or conductive adhesive may be used.

【0071】第1のパッド電極4と第2のパッド電極1
1を第1の接続部材9及び第2の接続部材15を介して
直接接合することにより、バンプなどを設ける必要がな
いためバンプなどの材料コスト、バンプをパッドなどに
設ける工数を削減することにより製造コストを低減する
ことができる。
First pad electrode 4 and second pad electrode 1
By directly joining 1 through the first connecting member 9 and the second connecting member 15, it is not necessary to provide bumps or the like, so that the material cost of bumps or the like and the number of steps for providing bumps or the like on pads or the like are reduced. The manufacturing cost can be reduced.

【0072】なお、第1の枠状部材5の材質としてはA
lに換えてAl合金、Tiなどを用いてもかまわない
し、第2の枠状部材12の材質としてはAgに換えてW
などを用いてもかまわない。
The material of the first frame member 5 is A
Al alloy, Ti or the like may be used instead of l, and the material of the second frame-shaped member 12 is W instead of Ag.
You may use such as.

【0073】第1及び第2の枠状部材5、12に少なく
とも一箇所は不連続部6、13を設けたのは、弾性表面
波素子集合体と回路基板集合体を対向させて封止する際
に最初から密閉状態であると、封止のために行う熱処理
により弾性表面波装置が熱せられ内圧が高くなり、溶融
した第1の接続部材9及び第2の接続部材15が外側へ
押し出され、膨らんだ状態で固まり外観不良になると共
に、第1及び第2の接続部材9、15が少ない部分では
封止状態が悪くなり、密封できない場合が発生し、耐湿
性などの耐候性が劣化する場合がある。
The discontinuities 6 and 13 are provided at least at one location on the first and second frame-shaped members 5 and 12 so that the surface acoustic wave element assembly and the circuit board assembly are opposed to each other and sealed. At this time, if the state is hermetically closed from the beginning, the surface acoustic wave device is heated by the heat treatment for sealing to increase the internal pressure, and the melted first connecting member 9 and second connecting member 15 are extruded to the outside. In addition, the bulging state hardens and the appearance becomes poor, and the sealing state becomes poor in a portion where the first and second connecting members 9 and 15 are small, and a case where sealing cannot be performed occurs, and weather resistance such as moisture resistance deteriorates. There are cases.

【0074】しかし、第1及び第2の枠状部材5、12
に予め少なくとも一箇所は不連続部6、13を設けるこ
とにより、弾性表面波素子集合体と回路基板集合体を対
向させて封止する際に最初は開放状態となるため、弾性
表面波装置の内圧が上がらず溶融した第1の接続部材9
及び第2の接続部材15が外側へ膨らむことがないた
め、外観不良がなくなると共に封止状態が良く、密封で
きるため耐候性に優れた弾性表面波装置が得られる。
However, the first and second frame-shaped members 5, 12
By disposing the discontinuous portions 6 and 13 at least at one place in advance, when the surface acoustic wave element assembly and the circuit board assembly are opposed to each other and sealed, they are initially in an open state. The first connection member 9 in which the internal pressure did not rise and was melted
Also, since the second connecting member 15 does not bulge outward, the surface acoustic wave device having excellent weather resistance can be obtained because appearance defects are eliminated and the sealing state is good and sealing is possible.

【0075】なお、不連続部6、13は封止時に開放状
態になる程度のものでよく、最低1箇所あればよい。
The discontinuous portions 6 and 13 may be in an open state at the time of sealing, and may be at least one location.

【0076】また、本実施の形態1では不連続部6、1
3は第1の枠状部材5と第2の枠状部材12のそれぞれ
に少なくとも1箇所設けることとしたが、封止時に開放
状態が確保できるのであれば少なくともどちらか1箇所
であってもかまわない。
Further, in the first embodiment, the discontinuous portions 6, 1
3 is provided at least at one location on each of the first frame-shaped member 5 and the second frame-shaped member 12, but at least one location may be provided as long as the open state can be secured at the time of sealing. Absent.

【0077】また、本実施の形態1では第1の枠状部材
5に設けた不連続部6と第2の枠状部材12に設けた不
連続部13は封止した際同じ位置になるように設けた
が、別々の位置に設けてもかまわない。ただし、別々の
位置に設けた場合、第3の接続部材により封止する箇所
が増え、製造工数が増えるためできるだけ同じ位置に設
けるのが望ましい。
Further, in the first embodiment, the discontinuous portion 6 provided on the first frame-shaped member 5 and the discontinuous portion 13 provided on the second frame-shaped member 12 are located at the same position when sealed. However, they may be provided at different positions. However, when they are provided at different positions, it is desirable to provide them at the same position as much as possible because the number of places to be sealed by the third connecting member increases and the number of manufacturing steps increases.

【0078】また、回路基板10の第2の枠状部材12
に設けた不連続部13付近に切り込み部16を設けたの
は、不連続部6及び13を第3の接続部材17で封止し
た時第3の接続部材17が回路基板10からはみ出さな
いようにするためであるが、必ずしも切り込み部16を
設けなくてもかまわない。
The second frame-shaped member 12 of the circuit board 10
The notch 16 is provided in the vicinity of the discontinuous portion 13 provided in the third connection member 17 when the discontinuous portions 6 and 13 are sealed with the third connection member 17 so that the third connection member 17 does not protrude from the circuit board 10. However, the notch 16 does not necessarily have to be provided.

【0079】また、弾性表面波素子が必ず金属製の枠状
部材5、12で囲まれることにより、周囲からの電磁波
やノイズが内部に侵入するのを遮断するシールド効果を
有し、特性を安定化することができる。
Further, since the surface acoustic wave element is always surrounded by the frame members 5 and 12 made of metal, it has a shield effect of blocking invasion of electromagnetic waves and noise from the surroundings, and stabilizes the characteristics. Can be converted.

【0080】また、第1の枠状部材5及び第2の枠状部
材12に接続して第1の流動阻止パターン7及び第3の
流動阻止パターン14を設けたのは、弾性表面波素子集
合体と回路基板集合体を対向させて封止する際に第1の
枠状部材5の上の溶融した第1の接続部材9が第1のパ
ッド電極4及び第2のパッド電極11側へ流れ込むのを
阻止するためである。
The surface acoustic wave element assembly is provided with the first flow blocking pattern 7 and the third flow blocking pattern 14 connected to the first frame-shaped member 5 and the second frame-shaped member 12. When the body and the circuit board assembly are opposed to each other and sealed, the melted first connecting member 9 on the first frame-shaped member 5 flows into the first pad electrode 4 and the second pad electrode 11 side. This is to prevent this.

【0081】第1の流動阻止パターン7及び第3の流動
阻止パターン14の形状は両端の接続部が狭く接続部の
間を広くした形状であり、これにより溶融して流れ込ん
だ第1の接続部材9及び第2の接続部材15は第1の流
動阻止パターン7及び第3の流動阻止パターン14の中
で一旦周囲に広がって流動し、端部で再度集まって流動
することになるため流出する部分では流動に対する抵抗
が増大し、第1の流動阻止パターン7及び第3の流動阻
止パターン14より先へは流動しにくくなり、流動を止
めることができる。
The shapes of the first flow blocking pattern 7 and the third flow blocking pattern 14 are such that the connecting portions at both ends are narrow and the space between the connecting portions is wide, whereby the first connecting member melted and flowed in. 9 and the second connecting member 15 spread in the first flow blocking pattern 7 and the third flow blocking pattern 14 and flow once, and then gather and flow again at the ends, so that they flow out. In, the resistance to flow increases, and it becomes difficult to flow beyond the first flow blocking pattern 7 and the third flow blocking pattern 14, and the flow can be stopped.

【0082】また同様に、第1のパッド電極4と櫛歯状
電極2に接続して第2の流動阻止パターン8を設けたの
は、第1のパッド電極4上に設けた第1の接続部材9が
溶融して第1のパッド電極4から櫛歯状電極2に流動す
るのを抑制するためのものであり、第2の流動阻止パタ
ーン8の形状は第1の流動阻止パターン7及び第3の流
動阻止パターン14と同様に両端の接続部が狭く、接続
部の間が広い形状が効果的である。
Similarly, the reason why the second flow blocking pattern 8 is connected to the first pad electrode 4 and the comb-shaped electrode 2 is that the first connection is provided on the first pad electrode 4. The member 9 is for preventing the member 9 from being melted and flowing from the first pad electrode 4 to the comb-shaped electrode 2, and the shape of the second flow blocking pattern 8 is the same as that of the first flow blocking pattern 7 and the first flow blocking pattern 7. It is effective that the connection portions at both ends are narrow and the space between the connection portions is wide as in the case of the flow prevention pattern 14 of FIG.

【0083】また、第1のパッド電極4の一部は弾性表
面波素子に設けた少なくとも一箇所は不連続部を有する
第1の枠状部材5に接続させることにより、パッド電極
に接続される部分の面積を広くすることができるため、
例えば圧電基板1が焦電効果により電位を発生させたと
しても広い面積の接続された電極部で電位を分担するこ
とにより、静電気放電などによる破壊を起こりにくくす
ることができる。第2のパッド電極11についても第1
のパッド電極4の場合と同様のことが言える。
Further, a part of the first pad electrode 4 is connected to the pad electrode by connecting at least one portion provided in the surface acoustic wave element to the first frame-shaped member 5 having a discontinuous portion. Since the area of the part can be increased,
For example, even if the piezoelectric substrate 1 generates an electric potential by the pyroelectric effect, the connected electrode portions having a large area share the electric potential, so that the destruction due to electrostatic discharge or the like can be made less likely to occur. The first pad electrode 11 is also the first
The same can be said as in the case of the pad electrode 4 of.

【0084】また、弾性表面波素子に設けた少なくとも
一箇所は不連続部を有する第1の枠状部材5に接続した
第1のパッド電極4は、弾性表面波装置のアース端子に
接続することにより、アース端子に接続される部分の面
積を広くすることができるため、例えば圧電基板1が焦
電効果により電位を発生させたとしても広い面積の共通
アースで電位を分担することにより、静電気放電などに
よる破壊を起こりにくくすることができる。第2のパッ
ド電極11についても第1のパッド電極4の場合と同様
のことが言える。
Also, the first pad electrode 4 connected to the first frame-shaped member 5 having a discontinuous portion at least at one place provided in the surface acoustic wave element should be connected to the ground terminal of the surface acoustic wave device. As a result, it is possible to increase the area of the portion connected to the ground terminal. Therefore, for example, even if the piezoelectric substrate 1 generates a potential due to the pyroelectric effect, the potential is shared by the common ground having a large area, so that electrostatic discharge can be performed. It is possible to make it less likely to be destroyed by such as. The same applies to the second pad electrode 11 as in the case of the first pad electrode 4.

【0085】なお、弾性表面波素子に設けた振動空間1
9は第1及び第2の枠状部材5、12の厚み、第1及び
第2のパッド電極4、11の厚みを調整することにより
形成した。
The vibration space 1 provided in the surface acoustic wave element 1
9 was formed by adjusting the thickness of the first and second frame-shaped members 5 and 12 and the thickness of the first and second pad electrodes 4 and 11.

【0086】また、封止する際に押圧しながら加熱する
ことにより接合、封止したのは、弾性表面波素子と回路
基板10の間隔を一定にすると共に、接合面に気泡など
がかみ込み密封性が悪くなるのを避けるためである。
Further, the sealing and the bonding are performed by heating while pressing so that the distance between the surface acoustic wave element and the circuit board 10 is constant and air bubbles are caught in the bonding surface and sealed. This is to avoid the deterioration of sex.

【0087】以上に示したように本実施の形態1によれ
ば、圧電基板1の外周部及びそれに対向する回路基板1
0の外周部に、少なくとも一箇所は不連続部6、13を
有する枠状部材5、12を配設し、相互に接合した後不
連続部6、13を封止することにより、封止時点では枠
状部材5、12の不連続部6、13が開放状態であるた
め内圧が上がらず、枠状部材5、12が外側へ膨れるこ
とがないため外観不良を低減することができると共に、
弾性表面波素子と回路基板10の形状が略等しい小型の
CSP型の弾性表面波装置が構成できるという作用効果
が得られる。
As described above, according to the first embodiment, the outer peripheral portion of the piezoelectric substrate 1 and the circuit board 1 facing it.
At the time of sealing, by arranging the frame-shaped members 5 and 12 having the discontinuous portions 6 and 13 at least at one location on the outer peripheral portion of 0, and sealing the discontinuous portions 6 and 13 after bonding them to each other. Then, since the discontinuous portions 6 and 13 of the frame-shaped members 5 and 12 are in the open state, the internal pressure does not rise, and the frame-shaped members 5 and 12 do not bulge outward, so that appearance defects can be reduced, and
It is possible to obtain a function and effect that a small CSP type surface acoustic wave device in which the surface acoustic wave element and the circuit board 10 have substantially the same shape can be configured.

【0088】(実施の形態2)以下に本発明の実施の形
態2を用いて、本発明の請求項1、17、22、23に
ついて説明する。図2は本発明の実施の形態2における
弾性表面波装置を組み立てる前の弾性表面波素子の斜視
図である。
(Embodiment 2) Claims 1, 17, 22, and 23 of the present invention will be described below with reference to Embodiment 2 of the present invention. FIG. 2 is a perspective view of a surface acoustic wave element before assembling a surface acoustic wave device according to a second exemplary embodiment of the present invention.

【0089】図2において、実施の形態1の図1で説明
したものと同一のものについては同一番号を付し、詳細
な説明は省略する。
In FIG. 2, the same components as those described in FIG. 1 of the first embodiment are designated by the same reference numerals and detailed description thereof will be omitted.

【0090】なお、図2は構成を模式的に示したもので
あり、それぞれの厚みや寸法の相対的な関係を示したも
のではない。
Note that FIG. 2 schematically shows the configuration, and does not show the relative relationship between the thicknesses and dimensions.

【0091】本実施の形態2と実施の形態1との相違す
る点は、弾性表面波素子の数、弾性表面波素子を囲む第
1及び第2の枠状部材の形状であり、その他については
実施の形態1と同様の操作を行った。
The difference between the second embodiment and the first embodiment is the number of surface acoustic wave elements, the shapes of the first and second frame-shaped members surrounding the surface acoustic wave elements, and the other points. The same operation as in the first embodiment was performed.

【0092】すなわち実施の形態1においては、弾性表
面波素子1個を1個の第1及び第2の枠状部材で囲んだ
構成になっているが、実施の形態2においては同一圧電
基板上に2個の弾性表面波素子を形成し、それぞれの弾
性表面波素子を別々に1個の枠状部材で囲み、それらを
組み合わせた構成にしたものである。
That is, in the first embodiment, one surface acoustic wave element is surrounded by the first and second frame members, but in the second embodiment, the same piezoelectric substrate is used. Two surface acoustic wave elements are formed in each of them, each surface acoustic wave element is separately surrounded by one frame-shaped member, and they are combined.

【0093】具体的には、同一圧電基板20上に櫛歯状
電極2、反射器電極3、第1のパッド電極4、第1の流
動阻止パターン7、第2の流動阻止パターン8からなる
弾性表面波素子を1個の少なくとも1箇所は不連続部6
を有する第3の枠状部材21で囲んだ弾性表面波素子を
2組近接して設け、第1のパッド電極4、第3の枠状部
材21に対向する形状に形成した回路基板10とを、弾
性表面波素子がフェイスダウン状態になるようにして接
合、封止したものである。
More specifically, the elasticity of the comb-shaped electrode 2, the reflector electrode 3, the first pad electrode 4, the first flow blocking pattern 7, and the second flow blocking pattern 8 on the same piezoelectric substrate 20. One surface acoustic wave element has at least one discontinuous portion 6
Two surface acoustic wave elements surrounded by a third frame-shaped member 21 having the following are provided, and the first pad electrode 4 and the circuit board 10 formed in a shape facing the third frame-shaped member 21 are provided. The surface acoustic wave device is joined and sealed so that the surface acoustic wave device is in a face-down state.

【0094】なお、第3の枠状部材21に設けた不連続
部6は2組の弾性表面波素子が近接する部分以外の部分
に設けてある。
The discontinuous portion 6 provided on the third frame member 21 is provided at a portion other than the portion where the two sets of surface acoustic wave elements are close to each other.

【0095】このような構成にすることにより、2組の
弾性表面波素子がそれぞれ別々の金属製の枠状部材で周
囲を囲まれるため、それぞれの弾性表面波素子が独立し
て密封性を確保すると共に、周囲からの電磁波やノイズ
の侵入を遮断することができる。従って、個々の弾性表
面波素子の耐久性を高められると共に、弾性表面波素子
自身の内部で不具合が発生したとしてもその影響を1個
の弾性表面波素子の内部に閉じ込め、他へ影響を及ぼさ
ないようにすることができる。
With this structure, the two sets of surface acoustic wave elements are surrounded by the respective metal frame members, so that the surface acoustic wave elements are independently sealed. In addition, it is possible to block the intrusion of electromagnetic waves and noise from the surroundings. Therefore, the durability of each surface acoustic wave element can be enhanced, and even if a failure occurs inside the surface acoustic wave element itself, the effect is confined inside one surface acoustic wave element and the other surface acoustic wave elements are affected. You can avoid it.

【0096】以上本発明の実施の形態2においては、同
一の圧電基板20上に2個の弾性表面波素子を形成し、
それぞれの弾性表面波素子を別々に1個の枠状部材21
で囲み、それらを組み合わせた構成にしたものであり、
実施の形態1と比較すると個々の弾性表面波素子がより
堅牢で耐久性に優れ、安定した特性の小型の弾性表面波
装置を得ることができるという作用効果が得られる。
As described above, in the second embodiment of the present invention, two surface acoustic wave elements are formed on the same piezoelectric substrate 20,
Each of the surface acoustic wave elements is separately provided as a single frame-shaped member 21.
It is a combination of them,
Compared with the first embodiment, the individual surface acoustic wave elements are more robust and excellent in durability, and a small surface acoustic wave device having stable characteristics can be obtained.

【0097】(実施の形態3)以下に本発明の実施の形
態3を用いて、本発明の請求項24〜34、36、37
について説明する。図3は本発明の実施の形態3におけ
る弾性表面波装置を組み立てる前の弾性表面波素子の斜
視図である。
(Third Embodiment) Hereinafter, the third embodiment of the present invention will be used to describe claims 24 to 34, 36 and 37 of the present invention.
Will be described. FIG. 3 is a perspective view of a surface acoustic wave element before assembling a surface acoustic wave device according to a third exemplary embodiment of the present invention.

【0098】図3において、実施の形態1の図1で説明
したものと同一のものについては同一番号を付し、詳細
な説明は省略する。
In FIG. 3, the same components as those described in FIG. 1 of the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

【0099】なお、図3は構成を模式的に示したもので
あり、それぞれの厚みや寸法の相対的な関係を示したも
のではない。
Note that FIG. 3 schematically shows the structure, and does not show the relative relationship between the thicknesses and dimensions.

【0100】本実施の形態3と実施の形態1との相違す
る点は、第1及び第2の枠状部材の形状及び封止する工
法であり、その他については実施の形態1と同様の操作
を行った。
The difference between the third embodiment and the first embodiment is the shape of the first and second frame-shaped members and the construction method, and the other operations are the same as those of the first embodiment. I went.

【0101】すなわち実施の形態1においては、弾性表
面波素子を少なくとも1箇所は不連続部を有する第1及
び第2の枠状部材で周囲を囲み、大気圧で封止を行う構
成になっているが、実施の形態3においては弾性表面波
素子を連続した第3及び第4の枠状部材で囲み、減圧下
で封止するようにしたものである。
That is, in the first embodiment, the surface acoustic wave element is configured such that at least one portion is surrounded by the first and second frame-shaped members having discontinuous portions and sealed at atmospheric pressure. However, in the third embodiment, the surface acoustic wave element is surrounded by the continuous third and fourth frame-shaped members and sealed under reduced pressure.

【0102】具体的には、圧電基板1上に櫛歯状電極3
1、反射器電極32、第1のパッド電極33、連続した
第3の枠状部材34、第1の流動阻止パターン35、第
2の流動阻止パターン36を実施の形態1と同様にして
形成する。
Specifically, the comb-teeth-shaped electrode 3 is formed on the piezoelectric substrate 1.
1, the reflector electrode 32, the first pad electrode 33, the continuous third frame-shaped member 34, the first flow blocking pattern 35, and the second flow blocking pattern 36 are formed in the same manner as in the first embodiment. .

【0103】回路基板10上に第2のパッド電極41、
連続した第4の枠状部材42、第3の流動阻止パターン
43を実施の形態1と同様にして形成する。
On the circuit board 10, the second pad electrode 41,
The fourth frame member 42 and the third flow blocking pattern 43 that are continuous are formed in the same manner as in the first embodiment.

【0104】このようにして得られた弾性表面波素子集
合体と回路基板集合体を対向させ、位置を調整し、回路
基板集合体の上に弾性表面波素子集合体を反転させフェ
イスダウン状態になるようにして重ね合わせ、約1MP
aの圧力で押圧して弾性表面波素子集合体と回路基板集
合体の間隔を所定の間隔としながら密閉容器に挿入し、
真空ポンプで103Paまで減圧し、その状態で350
℃で5分加熱することにより、第1の接続部材37及び
第2の接続部材44を溶融させ対向させた弾性表面波素
子集合体と回路基板集合体を封止する。その後、大気圧
にもどし、ダイシング装置などを用いて所定の寸法に切
断し、個片の弾性表面波装置を得る。
The surface acoustic wave element assembly thus obtained and the circuit board assembly are opposed to each other, their positions are adjusted, and the surface acoustic wave element assembly is inverted on the circuit board assembly to bring the surface down state. So that they overlap, about 1MP
The surface acoustic wave element assembly and the circuit board assembly are pressed into place with a predetermined pressure so that the surface acoustic wave element assembly and the circuit board assembly are inserted into the closed container.
Reduce the pressure to 10 3 Pa with a vacuum pump, and then 350
By heating at a temperature of 5 ° C. for 5 minutes, the surface acoustic wave element assembly and the circuit board assembly in which the first connection member 37 and the second connection member 44 are melted and faced each other are sealed. Then, the pressure is returned to atmospheric pressure, and the surface acoustic wave device is cut into pieces each having a predetermined size by using a dicing device or the like.

【0105】弾性表面波素子を連続する枠状部材で囲む
ことにより、密封性は高められるがそのまま封止すると
内圧が高くなり接続部材37、44が外側へ膨らみ封止
性が逆に悪くなるが、減圧下で封止することにより接続
部材37、44の外側への膨らみを防止しかつ同時に密
封性を高めることができる。
By enclosing the surface acoustic wave element with a continuous frame-like member, the sealing performance is improved, but if it is sealed as it is, the internal pressure increases and the connecting members 37 and 44 bulge outward, deteriorating the sealing performance. By sealing under reduced pressure, outward expansion of the connection members 37, 44 can be prevented and, at the same time, the sealing performance can be improved.

【0106】ここで、減圧にする圧力は大気圧より低け
れば接続部材37、44が外部に膨らまないためどの圧
力でもかまわないが、減圧下で加熱することによりガス
が発生するため、その影響を避けるためには104Pa
程度まで減圧することが望ましい。
[0106] Here, the pressure in the pressure reduction is the connecting member 37, 44 when lower than atmospheric pressure may be any pressure since it does not inflate to the outside, since the gas by heating under reduced pressure is generated, the influence 10 4 Pa to avoid
It is desirable to reduce the pressure to some degree.

【0107】以上に示したように本発明の実施の形態3
によれば、第1及び第2の流動阻止パターン35、36
を備えた弾性表面波素子を連続した第3及び第4の枠状
部材34、42で囲み、減圧下で封止することにより、
接続部材9、15が外部に膨らまず外観不良が低減でき
ると共に、連続した枠状部材34、42で周囲を囲むこ
とにより密封性が高められることから、実施の形態1と
比較すると、減圧にする工程が必要になるが、密封性を
さらに高められるため、耐湿性などの耐候性をさらに高
めることができる。
As described above, the third embodiment of the present invention
According to the first and second flow blocking patterns 35, 36,
By enclosing the surface acoustic wave device provided with the third and fourth frame-shaped members 34 and 42 in succession and sealing under reduced pressure,
Since the connection members 9 and 15 do not swell to the outside and the appearance defect can be reduced, and the sealing performance is improved by surrounding the periphery with the continuous frame-shaped members 34 and 42, the pressure is reduced as compared with the first embodiment. Although a step is required, since the sealing property can be further enhanced, weather resistance such as moisture resistance can be further enhanced.

【0108】(実施の形態4)以下に本発明の実施の形
態4を用いて、本発明の請求項35について説明する。
図4は本発明の実施の形態4における弾性表面波装置を
組み立てる前の弾性表面波素子の斜視図である。図4に
おいて、実施の形態1の図1で説明したものと同一のも
のについては同一番号を付し、詳細な説明は省略する。
なお、図4は構成を模式的に示したものであり、それぞ
れの厚みや寸法の相対的な関係を示したものではない。
(Embodiment 4) The claim 35 of the present invention will be described below with reference to Embodiment 4 of the present invention.
FIG. 4 is a perspective view of a surface acoustic wave element before assembling a surface acoustic wave device according to a fourth exemplary embodiment of the present invention. 4, the same components as those described in FIG. 1 of the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.
Note that FIG. 4 schematically shows the configuration, and does not show the relative relationship between the thicknesses and dimensions.

【0109】本実施の形態4と実施の形態1との相違す
る点は、弾性表面波素子の数、弾性表面波素子を囲む第
1及び第2の枠状部材の形状、封止する工法であり、そ
の他については実施の形態1と同様の操作を行った。
The differences between the fourth embodiment and the first embodiment are the number of surface acoustic wave elements, the shapes of the first and second frame members surrounding the surface acoustic wave elements, and the method of sealing. Yes, the other operations were the same as those in the first embodiment.

【0110】すなわち実施の形態1においては、弾性表
面波素子1個を1個の少なくとも1箇所は不連続部を有
する枠状部材で囲んだ構成になっているが、実施の形態
4においては同一圧電基板上に2個の弾性表面波素子を
形成し、それぞれの弾性表面波素子を別々に連続する枠
状部材で囲み、それらを組み合わせ、減圧下で封止した
構成にしたものである。
That is, in the first embodiment, one surface acoustic wave element is surrounded by a frame-shaped member having at least one discontinuous portion, but in the fourth embodiment, it is the same. In this structure, two surface acoustic wave elements are formed on a piezoelectric substrate, each surface acoustic wave element is separately surrounded by a continuous frame-shaped member, which are combined and sealed under reduced pressure.

【0111】具体的には、同一圧電基板51上に櫛歯状
電極31、反射器電極32、第1のパッド電極33、第
1の流動阻止パターン35、第2の流動阻止パターン3
6からなる弾性表面波素子を1個の連続した第3の枠状
部材52で囲んだ弾性表面波素子を2組近接して設け、
第1のパッド電極33、第3の枠状部材52に対向する
形状に形成した回路基板10と対向させ、位置を調整し
て重ね合わせ、弾性表面波素子がフェイスダウン状態に
なるように配置し、減圧下で封止した後切断し、個片の
弾性表面波装置を得る。なお、封止以降の工程は実施の
形態3と同様の条件で行った。
Specifically, the comb-teeth-shaped electrode 31, the reflector electrode 32, the first pad electrode 33, the first flow blocking pattern 35, and the second flow blocking pattern 3 are formed on the same piezoelectric substrate 51.
Two sets of surface acoustic wave elements each having a surface acoustic wave element made of 6 surrounded by one continuous third frame-shaped member 52 are provided in close proximity,
The surface acoustic wave device is arranged so that the surface acoustic wave device is in a face-down state by facing the circuit board 10 formed in a shape facing the first pad electrode 33 and the third frame-shaped member 52, adjusting their positions, and stacking them. After sealing under reduced pressure, cutting is performed to obtain individual surface acoustic wave devices. The steps after the sealing were performed under the same conditions as in the third embodiment.

【0112】以上に示したように、本実施の形態4によ
れば同一圧電基板51上に2個の弾性表面波素子を形成
し、それぞれの弾性表面波素子を別々に連続する枠状部
材52で囲み、それらを組み合わせ、減圧下で封止する
ことにより、2組の弾性表面波素子がそれぞれ別々の金
属製の枠状部材52で周囲を囲まれるため、それぞれの
弾性表面波素子が独立して密封性を保持すると共に、周
囲からの電磁波やノイズの侵入を遮断することができ
る。
As described above, according to the fourth embodiment, two surface acoustic wave elements are formed on the same piezoelectric substrate 51, and each surface acoustic wave element is continuously connected to the frame-shaped member 52. By surrounding them with each other and sealing them under reduced pressure, since two sets of surface acoustic wave elements are surrounded by different metal frame members 52, the respective surface acoustic wave elements are independent. As a result, it is possible to maintain the airtightness and block the invasion of electromagnetic waves and noise from the surroundings.

【0113】また、減圧下で封止することにより接続部
材37、44が外部から膨らまず外観不良が低減できる
ことから、実施の形態1と比較すると、減圧にする工程
が必要になるが、密封性をさらに高められると共に、個
々の弾性表面波素子がより堅牢で耐久性に優れ、安定し
た特性の小型の弾性表面波装置を得ることができるとい
う作用効果が得られる。
Further, by sealing under reduced pressure, the connection members 37 and 44 do not swell from the outside and the appearance defect can be reduced. Therefore, compared with the first embodiment, a step of reducing the pressure is required, but the sealing property is reduced. Further, it is possible to obtain a function and effect that each surface acoustic wave element is more robust and has excellent durability, and a small surface acoustic wave device having stable characteristics can be obtained.

【0114】[0114]

【発明の効果】以上のように本発明によれば、圧電基板
の外周部及びそれに対向する回路基板の外周部に少なく
とも一箇所は不連続部を有する枠状部材を配設し、相互
に接合した後不連続部を封止することにより、封止時点
では枠状部材の不連続部が開放状態であるため内圧が上
がらず、枠状部材が外側へ膨れることがないため外観不
良を低減することができると共に、弾性表面波素子と回
路基板の形状が略等しい小型のCSP型の弾性表面波装
置を得ることができる。
As described above, according to the present invention, a frame-shaped member having at least one discontinuous portion is provided on the outer peripheral portion of the piezoelectric substrate and the outer peripheral portion of the circuit substrate facing the piezoelectric substrate, and the frame-shaped members are bonded to each other. After that, by sealing the discontinuous portion, the internal pressure does not rise because the discontinuous portion of the frame-shaped member is in an open state at the time of sealing, and the frame-shaped member does not bulge outward, thereby reducing appearance defects. In addition, it is possible to obtain a small CSP type surface acoustic wave device in which the surface acoustic wave element and the circuit board have substantially the same shape.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態1における弾性表面波装置
を組み立てる前の斜視図
FIG. 1 is a perspective view before assembling a surface acoustic wave device according to a first embodiment of the present invention.

【図2】本発明の実施の形態2における弾性表面波装置
を組み立てる前の弾性表面波素子の斜視図
FIG. 2 is a perspective view of a surface acoustic wave element before assembling a surface acoustic wave device according to a second embodiment of the present invention.

【図3】本発明の実施の形態3における弾性表面波装置
を組み立てる前の斜視図
FIG. 3 is a perspective view before assembling the surface acoustic wave device according to the third embodiment of the present invention.

【図4】本発明の実施の形態4における弾性表面波装置
を組み立てる前の弾性表面波素子の斜視図
FIG. 4 is a perspective view of a surface acoustic wave element before assembling a surface acoustic wave device according to a fourth embodiment of the present invention.

【図5】従来例における弾性表面波装置の断面図FIG. 5 is a sectional view of a surface acoustic wave device in a conventional example.

【符号の説明】[Explanation of symbols]

1 圧電基板 2 櫛歯状電極 3 反射器電極 4 第1のパッド電極 5 第1の枠状部材 6 不連続部 7 第1の流動阻止パターン 8 第2の流動阻止パターン 9 第1の接続部材 10 回路基板 11 第2のパッド電極 12 第2の枠状部材 13 不連続部 14 第3の流動阻止パターン 15 第2の接続部材 16 切り込み部 17 第3の接続部材 18 外部電極 19 振動空間 20 圧電基板 21 第3の枠状部材 31 櫛歯状電極 32 反射器電極 33 第3のパッド電極 34 第3の枠状部材 35 第1の流動阻止パターン 36 第2の流動阻止パターン 37 第1の接続部材 41 第4のパッド電極 42 第4の枠状部材 43 第3の流動阻止パターン 44 第2の接続部材 45 外部電極 46 振動空間 1 Piezoelectric substrate 2 Comb-shaped electrodes 3 reflector electrode 4 First pad electrode 5 First frame-shaped member 6 discontinuities 7 First flow blocking pattern 8 Second flow blocking pattern 9 First connection member 10 circuit board 11 Second pad electrode 12 Second frame-shaped member 13 discontinuous part 14 Third flow blocking pattern 15 Second connection member 16 notch 17 Third Connection Member 18 External electrode 19 vibration space 20 Piezoelectric substrate 21 Third Frame Member 31 Comb-shaped electrode 32 reflector electrode 33 Third pad electrode 34 Third Frame Member 35 First flow blocking pattern 36 Second flow blocking pattern 37 First Connection Member 41 Fourth pad electrode 42 Fourth Frame Member 43 Third Flow Blocking Pattern 44 Second Connection Member 45 External electrode 46 Vibration space

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 23/08 H01L 23/08 C H03H 3/08 H03H 3/08 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 23/08 H01L 23/08 C H03H 3/08 H03H 3/08

Claims (37)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板に櫛歯状電極と反射器電極と第
1のパッド電極を設けてなる弾性表面波素子と、この弾
性表面波素子を実装する回路基板とからなり、前記弾性
表面波素子と回路基板を対向させ、前記回路基板上で前
記第1のパッド電極と対向する位置に第2のパッド電極
を設け、前記圧電基板上の櫛歯状電極、反射器電極及び
第1のパッド電極の外周部に少なくとも一箇所は不連続
部を有する第1の枠状部材を配設し、前記回路基板上で
第1の枠状部材と対向する位置に少なくとも一箇所は不
連続部を有する第2の枠状部材を配設し、前記第1のパ
ッド電極と第2のパッド電極どうし及び前記第1の枠状
部材と第2の枠状部材どうしを相互に接合することによ
り電気的に接続すると共に振動空間を形成し、前記枠状
部材の不連続部を封止した弾性表面波装置。
1. A surface acoustic wave device comprising a piezoelectric substrate provided with comb-teeth-shaped electrodes, a reflector electrode and a first pad electrode, and a circuit board on which the surface acoustic wave device is mounted. The element and the circuit board are opposed to each other, a second pad electrode is provided on the circuit board at a position opposed to the first pad electrode, and a comb-shaped electrode, a reflector electrode and a first pad on the piezoelectric substrate are provided. A first frame-shaped member having at least one discontinuous portion is provided on the outer peripheral portion of the electrode, and at least one position has a discontinuous portion at a position facing the first frame-shaped member on the circuit board. A second frame-shaped member is provided, and the first pad electrode and the second pad electrode are electrically connected to each other, and the first frame-shaped member and the second frame-shaped member are electrically connected to each other. It connects to form a vibration space and seals the discontinuous part of the frame-shaped member. Stopped surface acoustic wave device.
【請求項2】 第1のパッド電極の一部は弾性表面波素
子に設けた少なくとも一箇所は不連続部を有する第1の
枠状部材に接続してなる請求項1に記載の弾性表面波装
置。
2. The surface acoustic wave according to claim 1, wherein a part of the first pad electrode is connected to a first frame-shaped member having a discontinuous portion provided in at least one location provided on the surface acoustic wave element. apparatus.
【請求項3】 弾性表面波素子に設けた少なくとも一箇
所は不連続部を有する第1の枠状部材に接続した第1の
パッド電極は、アース端子に接続してなる請求項2に記
載の弾性表面波装置。
3. The first pad electrode connected to a first frame-shaped member having a discontinuity at least at one location provided on the surface acoustic wave element is connected to a ground terminal. Surface acoustic wave device.
【請求項4】 第2のパッド電極の一部は、回路基板上
に設けた少なくとも一箇所は不連続部を有する第2の枠
状部材に接続してなる請求項1に記載の弾性表面波装
置。
4. The surface acoustic wave according to claim 1, wherein a part of the second pad electrode is connected to a second frame-shaped member provided on the circuit board and having at least one discontinuous portion. apparatus.
【請求項5】 回路基板に設けた少なくとも一箇所は不
連続部を有する第2の枠状部材に接続している第2のパ
ッド電極は、アース端子に接続してなる請求項4に記載
の弾性表面波装置。
5. The second pad electrode, which is connected to a second frame-shaped member having a discontinuous portion at least at one place provided on the circuit board, is connected to a ground terminal. Surface acoustic wave device.
【請求項6】 第1及び第2の枠状部材は金属である請
求項1に記載の弾性表面波装置。
6. The surface acoustic wave device according to claim 1, wherein the first and second frame-shaped members are made of metal.
【請求項7】 第1の枠状部材は少なくともAl、Al
合金、Tiのいずれかである請求項6に記載の弾性表面
波装置。
7. The first frame-shaped member is at least Al, Al
The surface acoustic wave device according to claim 6, which is one of an alloy and Ti.
【請求項8】 第2の枠状部材は少なくともW、Agの
いずれかである請求項6に記載の弾性表面波装置。
8. The surface acoustic wave device according to claim 6, wherein the second frame-shaped member is at least W or Ag.
【請求項9】 第1のパッド電極上に第1の接続部材を
設け、第2のパッド電極上に第2の接続部材を設けた請
求項1に記載の弾性表面波装置。
9. The surface acoustic wave device according to claim 1, wherein the first connecting member is provided on the first pad electrode, and the second connecting member is provided on the second pad electrode.
【請求項10】 第1の接続部材及び第2の接続部材は
金属である請求項9に記載の弾性表面波装置。
10. The surface acoustic wave device according to claim 9, wherein the first connecting member and the second connecting member are made of metal.
【請求項11】 金属は少なくともNi、Au、Au−
Sn、Au−Sn−他の金属との合金、Au−Pt、A
u−Pt−他の金属との合金、Pb−Sn半田のいずれ
かである請求項10に記載の弾性表面波装置。
11. The metal is at least Ni, Au, Au--.
Sn, Au-Sn-alloy with other metal, Au-Pt, A
The surface acoustic wave device according to claim 10, wherein the surface acoustic wave device is u-Pt-an alloy with another metal or Pb-Sn solder.
【請求項12】 弾性表面波素子の第1のパッド電極と
少なくとも一箇所は不連続部を有する第1の枠状部材の
間に、前記第1の枠状部材の流動を止めるための第1の
流動阻止パターンを設けた請求項1に記載の弾性表面波
装置。
12. A first pad electrode of a surface acoustic wave element and a first frame-shaped member having a discontinuous portion at least at one location are provided between the first pad electrode and the first frame-shaped member for stopping the flow of the first frame-shaped member. The surface acoustic wave device according to claim 1, wherein the flow prevention pattern is provided.
【請求項13】 第1の流動阻止パターンは、両端の接
続部が狭く接続部の間を広くしたものである請求項12
に記載の弾性表面波装置。
13. The first flow-preventing pattern has a narrow connecting portion at both ends and a wide connecting portion.
The surface acoustic wave device according to.
【請求項14】 弾性表面波素子の櫛歯状電極と第1の
パッド電極の間に、第1の接続部材の流動を止めるため
の第2の流動阻止パターンを設けた請求項1に記載の弾
性表面波装置。
14. The second flow blocking pattern for stopping the flow of the first connecting member is provided between the comb-teeth-shaped electrode of the surface acoustic wave element and the first pad electrode. Surface acoustic wave device.
【請求項15】 第2の流動阻止パターンは、両端の接
続部が狭く接続部の間を広くしたものである請求項14
に記載の弾性表面波装置。
15. The second flow-preventing pattern has a narrow connecting portion at both ends and a wide connecting portion.
The surface acoustic wave device according to.
【請求項16】 第1及び第2のパッド電極、第1及び
第2の枠状部材は熱圧着により相互に接続した請求項1
に記載の弾性表面波装置。
16. The first and second pad electrodes and the first and second frame-shaped members are connected to each other by thermocompression bonding.
The surface acoustic wave device according to.
【請求項17】 1つの弾性表面波素子を少なくとも一
箇所は不連続部を有する1つの第1の枠状部材により囲
み、それらを複数組み合わせた請求項1に記載の弾性表
面波装置。
17. The surface acoustic wave device according to claim 1, wherein one surface acoustic wave element is surrounded by one first frame-shaped member having a discontinuous portion at least at one location, and a plurality of them are combined.
【請求項18】 少なくとも圧電基板及び回路基板に設
けた少なくとも一箇所は不連続部を有する第1及び第2
の枠状部材の前記不連続部を第3の接続部材で接続及び
封止した請求項1に記載の弾性表面波装置。
18. A first and a second having at least one discontinuous portion provided on at least a piezoelectric substrate and a circuit substrate.
The surface acoustic wave device according to claim 1, wherein the discontinuous portion of the frame-shaped member is connected and sealed by a third connecting member.
【請求項19】 第3の接続部材は金属を含むものであ
る請求項18に記載の弾性表面波装置。
19. The surface acoustic wave device according to claim 18, wherein the third connecting member contains a metal.
【請求項20】 金属はAu−Sn、Au−Sn−他の
金属との合金、Au−Pt、Au−Pt−他の金属との
合金、Pb−Sn半田のいずれかである請求項19に記
載の弾性表面波装置。
20. The metal is any one of Au—Sn, Au—Sn—an alloy with another metal, Au—Pt, Au—Pt—an alloy with another metal, and Pb—Sn solder. The surface acoustic wave device described.
【請求項21】 回路基板の材質はセラミック、ガラ
ス、樹脂のいずれかである請求項1に記載の弾性表面波
装置。
21. The surface acoustic wave device according to claim 1, wherein the material of the circuit board is ceramic, glass, or resin.
【請求項22】 圧電基板上に櫛歯状電極と反射器電極
と第1のパッド電極を設ける工程と、前記圧電基板上の
櫛歯状電極、反射器電極及び第1のパッド電極の外周部
に少なくとも一箇所は不連続部を有する第1の枠状部材
を形成する工程と、回路基板に外部電極を設ける工程
と、前記回路基板上で前記第1のパッド電極と対向する
位置に第2のパッド電極を設ける工程と、前記回路基板
上で前記第1の枠状部材と対向する位置に少なくとも一
箇所は不連続部を有する第2の枠状部材を設ける工程
と、前記第1のパッド電極と第2のパッド電極どうし及
び前記第1の枠状部材と第2の枠状部材どうしを接合す
る工程と、前記不連続部を第3の接続部材で接続、封止
する工程と、個片に切断する工程を含む弾性表面波装置
の製造方法。
22. A step of providing a comb-teeth electrode, a reflector electrode and a first pad electrode on a piezoelectric substrate, and an outer peripheral portion of the comb-teeth electrode, the reflector electrode and the first pad electrode on the piezoelectric substrate. A step of forming a first frame-shaped member having a discontinuous portion at least at one position, a step of providing an external electrode on the circuit board, and a step of forming a second electrode on the circuit board at a position facing the first pad electrode. The step of providing a pad electrode, the step of providing a second frame-shaped member having a discontinuous portion at least at one position on the circuit board, the position facing the first frame-shaped member, and the first pad. A step of joining the electrodes and the second pad electrodes to each other and the first frame-shaped member and the second frame-shaped members to each other; a step of connecting and sealing the discontinuous portion with a third connecting member; A method of manufacturing a surface acoustic wave device, comprising the step of cutting into pieces.
【請求項23】 第1のパッド電極と第2のパッド電極
どうし及び第1の枠状部材と第2の枠状部材どうしを接
合する方法は熱圧着である請求項22に記載の弾性表面
波装置の製造方法。
23. The surface acoustic wave according to claim 22, wherein the method of joining the first pad electrode and the second pad electrode together and the method of joining the first frame member and the second frame member together is thermocompression bonding. Device manufacturing method.
【請求項24】 圧電基板に櫛歯状電極と、反射器電極
と、第1のパッド電極を設けてなる弾性表面波素子と、
前記弾性表面波素子を実装する回路基板とからなり、前
記弾性表面波素子と回路基板を対向させ、前記回路基板
上で前記第1のパッド電極と対向する位置に第2のパッ
ド電極を設け、前記第1のパッド電極と第2のパッド電
極を接合することにより電気的に接続すると共に振動空
間を形成し、前記圧電基板上の櫛歯状電極、反射器電極
及び第1のパッド電極の外周部に連続した第3の枠状部
材を配設し、前記回路基板上で前記第3の枠状部材と対
向する位置に連続した第4の枠状部材を配設し、減圧下
で前記第1のパッド電極及び第2のパッド電極どうし、
前記第3及び第4の枠状部材どうしを相互に接合、封止
した弾性表面波装置。
24. A surface acoustic wave element comprising a piezoelectric substrate provided with comb-teeth electrodes, a reflector electrode, and a first pad electrode.
A circuit board on which the surface acoustic wave element is mounted, the surface acoustic wave element and the circuit board are opposed to each other, and a second pad electrode is provided on the circuit board at a position opposed to the first pad electrode. The first pad electrode and the second pad electrode are joined to electrically connect to each other to form a vibrating space, and the comb-teeth electrode, the reflector electrode, and the outer periphery of the first pad electrode on the piezoelectric substrate are formed. A continuous third frame-shaped member, and a continuous fourth frame-shaped member on the circuit board at a position facing the third frame-shaped member. Between the first pad electrode and the second pad electrode,
A surface acoustic wave device in which the third and fourth frame-shaped members are mutually joined and sealed.
【請求項25】 弾性表面波素子に設けた第1のパッド
電極の一部は連続する第3の枠状部材に接続している請
求項24に記載の弾性表面波装置。
25. The surface acoustic wave device according to claim 24, wherein a part of the first pad electrode provided on the surface acoustic wave element is connected to a continuous third frame-shaped member.
【請求項26】 弾性表面波素子に設けた第1のパッド
電極のうち、連続する第3の枠状部材に接続した前記第
1のパッド電極はアース端子に接続してなる請求項24
に記載の弾性表面波装置。
26. Of the first pad electrodes provided on the surface acoustic wave element, the first pad electrode connected to a continuous third frame member is connected to a ground terminal.
The surface acoustic wave device according to.
【請求項27】 回路基板に設けた第2のパッド電極の
一部は回路基板上に設けた連続する第4の枠状部材に接
続してなる請求項24に記載の弾性表面波装置。
27. The surface acoustic wave device according to claim 24, wherein a part of the second pad electrode provided on the circuit board is connected to a continuous fourth frame-shaped member provided on the circuit board.
【請求項28】 回路基板に設けた第2のパッド電極の
うち、連続する第4の枠状部材に接続している前記第2
のパッド電極はアース端子に接続してなる請求項24に
記載の弾性表面波装置。
28. Of the second pad electrodes provided on the circuit board, the second pad electrodes connected to a continuous fourth frame-shaped member.
The surface acoustic wave device according to claim 24, wherein the pad electrode is connected to a ground terminal.
【請求項29】 第1及び第2のパッド電極、第3及び
第4の枠状部材は熱圧着により相互に接続した請求項2
4に記載の弾性表面波装置。
29. The first and second pad electrodes and the third and fourth frame members are connected to each other by thermocompression bonding.
4. The surface acoustic wave device according to item 4.
【請求項30】 第1のパッド電極上に第1の接続部材
を設け、第2のパッド電極上に第2の接続部材を設けた
請求項24に記載の弾性表面波装置。
30. The surface acoustic wave device according to claim 24, wherein the first connection member is provided on the first pad electrode, and the second connection member is provided on the second pad electrode.
【請求項31】 第1及び第2の接続部材は金属である
請求項30に記載の弾性表面波装置。
31. The surface acoustic wave device according to claim 30, wherein the first and second connecting members are made of metal.
【請求項32】 金属は少なくともNi、Au、Au−
Sn、Au−Sn−他の金属との合金、Au−Pt、A
u−Pt−他の金属との合金、Pb−Sn半田のいずれ
かである請求項31に記載の弾性表面波装置。
32. The metal is at least Ni, Au, Au-.
Sn, Au-Sn-alloy with other metal, Au-Pt, A
32. The surface acoustic wave device according to claim 31, which is one of u-Pt-an alloy with another metal and Pb-Sn solder.
【請求項33】 弾性表面波素子の櫛歯状電極と連続す
る第3の枠状部材の間に、前記第3の枠状部材の流動を
止めるための第3の流動阻止パターンを設けた請求項2
4に記載の弾性表面波装置。
33. A third flow blocking pattern for stopping the flow of the third frame-shaped member is provided between the comb-shaped electrode of the surface acoustic wave element and the third frame-shaped member continuous with the electrode. Item 2
4. The surface acoustic wave device according to item 4.
【請求項34】 弾性表面波素子の櫛歯状電極と第1の
パッド電極の間に、第1の接続部材の流動を止めるため
の第4の流動阻止パターンを設けた請求項24に記載の
弾性表面波装置。
34. The fourth flow blocking pattern for stopping the flow of the first connecting member is provided between the comb-teeth-shaped electrode of the surface acoustic wave element and the first pad electrode. Surface acoustic wave device.
【請求項35】 1つの弾性表面波素子を1つの連続す
る第3の枠状部材により囲み、それらを複数組み合わせ
た請求項24に記載の弾性表面波装置。
35. The surface acoustic wave device according to claim 24, wherein one surface acoustic wave element is surrounded by one continuous third frame-shaped member, and a plurality of them are combined.
【請求項36】 減圧下で第1のパッド電極及び第2の
パッド電極どうし、第3及び第4の枠状部材どうしを相
互に接合、封止する時の圧力は大気圧より低い状態とし
た請求項24に記載の弾性表面波装置。
36. The pressure for bonding and sealing the first pad electrode and the second pad electrode, and the third and fourth frame-shaped members to each other under reduced pressure is set to be lower than atmospheric pressure. The surface acoustic wave device according to claim 24.
【請求項37】 圧電基板上に櫛歯状電極と反射器電極
と第1のパッド電極を設ける工程と、前記圧電基板上の
櫛歯状電極、反射器電極及び第1のパッド電極の外周部
に連続した第3の枠状部材を形成する工程と、回路基板
に外部電極を設ける工程と、前記回路基板上で第1のパ
ッド電極と対向する位置に第2のパッド電極を設ける工
程と、前記回路基板上で前記第3の枠状部材と対向する
位置に連続した第4の枠状部材を設ける工程と、減圧下
で前記第1のパッド電極と第2のパッド電極どうし及び
前記第3の枠状部材と第4の枠状部材どうしを接合、封
止する工程と、切断する工程を含む弾性表面波装置の製
造方法。
37. A step of providing a comb-teeth electrode, a reflector electrode, and a first pad electrode on a piezoelectric substrate, and an outer peripheral portion of the comb-teeth electrode, the reflector electrode, and the first pad electrode on the piezoelectric substrate. A step of forming a continuous third frame-shaped member, a step of providing an external electrode on the circuit board, and a step of providing a second pad electrode on the circuit board at a position facing the first pad electrode. Providing a continuous fourth frame-shaped member at a position facing the third frame-shaped member on the circuit board; and, under reduced pressure, the first pad electrode and the second pad electrode, and the third pad electrode. A method for manufacturing a surface acoustic wave device, comprising: a step of joining and sealing the frame-shaped member and the fourth frame-shaped member together; and a step of cutting.
JP2001263254A 2001-08-31 2001-08-31 Surface acoustic wave device and its manufacturing method Pending JP2003078389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001263254A JP2003078389A (en) 2001-08-31 2001-08-31 Surface acoustic wave device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001263254A JP2003078389A (en) 2001-08-31 2001-08-31 Surface acoustic wave device and its manufacturing method

Publications (1)

Publication Number Publication Date
JP2003078389A true JP2003078389A (en) 2003-03-14

Family

ID=19090038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001263254A Pending JP2003078389A (en) 2001-08-31 2001-08-31 Surface acoustic wave device and its manufacturing method

Country Status (1)

Country Link
JP (1) JP2003078389A (en)

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005252335A (en) * 2004-03-01 2005-09-15 Matsushita Electric Ind Co Ltd Integrated circuit device and manufacturing method thereof
JP2006067258A (en) * 2004-08-26 2006-03-09 Kyocera Corp Surface acoustic wave device and communication apparatus
JP2006210994A (en) * 2005-01-25 2006-08-10 Kyocera Corp Mounting structure of surface acoustic wave element, high frequency module and communication apparatus
US7211934B2 (en) 2003-01-07 2007-05-01 Hitachi, Ltd. Electronic device and method of manufacturing the same
JP2008219943A (en) * 2004-09-13 2008-09-18 Seiko Epson Corp Method for manufacturing electronic component
JP2009302248A (en) * 2008-06-12 2009-12-24 Mitsubishi Electric Corp Electronic component package and its manufacturing method
US8227878B2 (en) 2004-09-13 2012-07-24 Seiko Epson Corporation Sealed surface acoustic wave element package
JP2013247359A (en) * 2012-05-23 2013-12-09 Freescale Semiconductor Inc Cavity-type semiconductor package and method of packaging the same
JP2022525465A (en) * 2019-04-05 2022-05-16 レゾナント インコーポレイテッド Laterally Excited Film Bulk Acoustic Resonator Package and Method
US11811391B2 (en) 2020-05-04 2023-11-07 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with etched conductor patterns
US11817840B2 (en) 2018-06-15 2023-11-14 Murata Manufacturing Co., Ltd. XBAR resonators with non-rectangular diaphragms
US11824520B2 (en) 2018-06-15 2023-11-21 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11831289B2 (en) 2018-06-15 2023-11-28 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US11870423B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator
US11870424B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
US11876498B2 (en) 2018-06-15 2024-01-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US11881835B2 (en) 2020-11-11 2024-01-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
US11888463B2 (en) 2018-06-15 2024-01-30 Murata Manufacturing Co., Ltd. Multi-port filter using transversely-excited film bulk acoustic resonators
US11901874B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer
US11901878B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer
US11909381B2 (en) 2018-06-15 2024-02-20 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US11916540B2 (en) 2018-06-15 2024-02-27 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with periodic etched holes
US11929731B2 (en) 2018-02-18 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
US11936361B2 (en) 2018-06-15 2024-03-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators
US11949403B2 (en) 2019-08-28 2024-04-02 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US11949402B2 (en) 2020-08-31 2024-04-02 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US11949399B2 (en) 2018-06-15 2024-04-02 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US11955952B2 (en) 2019-06-24 2024-04-09 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited bulk acoustic resonator split ladder filter
US11967942B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic filters with symmetric layout
US11967946B2 (en) 2020-02-18 2024-04-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a bonding layer and an etch-stop layer
US11984868B2 (en) 2018-06-15 2024-05-14 Murata Manufacturing Co., Ltd. Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
US11984872B2 (en) 2018-06-15 2024-05-14 Murata Manufacturing Co., Ltd. Film bulk acoustic resonator fabrication method
US11990888B2 (en) 2018-06-15 2024-05-21 Murata Manufacturing Co., Ltd. Resonator using YX-cut lithium niobate for high power applications
US11996825B2 (en) 2020-06-17 2024-05-28 Murata Manufacturing Co., Ltd. Filter using lithium niobate and rotated lithium tantalate transversely-excited film bulk acoustic resonators
US11996822B2 (en) 2018-06-15 2024-05-28 Murata Manufacturing Co., Ltd. Wide bandwidth time division duplex transceiver
US12003226B2 (en) 2020-11-11 2024-06-04 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic resonator with low thermal impedance
US12015393B2 (en) 2018-06-15 2024-06-18 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
US12028040B2 (en) 2020-07-18 2024-07-02 Murata Manufacturing Co., Ltd. Acoustic resonators and filters with reduced temperature coefficient of frequency
US12034428B2 (en) 2018-06-15 2024-07-09 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic filter using pitch to establish frequency separation between resonators
US12040783B2 (en) 2020-04-20 2024-07-16 Murata Manufacturing Co., Ltd. Low loss transversely-excited film bulk acoustic resonators and filters
US12040778B2 (en) 2018-06-15 2024-07-16 Murata Manufacturing Co., Ltd. High frequency, high power film bulk acoustic resonators
US12040781B2 (en) 2018-06-15 2024-07-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US12040779B2 (en) 2020-04-20 2024-07-16 Murata Manufacturing Co., Ltd. Small transversely-excited film bulk acoustic resonators with enhanced Q-factor
US12081187B2 (en) 2018-06-15 2024-09-03 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator
US12088272B2 (en) 2018-06-15 2024-09-10 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonator
US12088281B2 (en) 2021-02-03 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multi-mark interdigital transducer
US12088280B2 (en) 2018-06-15 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US12095446B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US12113512B2 (en) 2021-03-29 2024-10-08 Murata Manufacturing Co., Ltd. Layout of XBARs with multiple sub-resonators in parallel
US12119798B2 (en) 2023-01-12 2024-10-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method

Cited By (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7211934B2 (en) 2003-01-07 2007-05-01 Hitachi, Ltd. Electronic device and method of manufacturing the same
JP2005252335A (en) * 2004-03-01 2005-09-15 Matsushita Electric Ind Co Ltd Integrated circuit device and manufacturing method thereof
JP4576849B2 (en) * 2004-03-01 2010-11-10 パナソニック株式会社 Integrated circuit device
JP4518877B2 (en) * 2004-08-26 2010-08-04 京セラ株式会社 Surface acoustic wave device
JP2006067258A (en) * 2004-08-26 2006-03-09 Kyocera Corp Surface acoustic wave device and communication apparatus
JP2008219943A (en) * 2004-09-13 2008-09-18 Seiko Epson Corp Method for manufacturing electronic component
US8227878B2 (en) 2004-09-13 2012-07-24 Seiko Epson Corporation Sealed surface acoustic wave element package
US8492856B2 (en) 2004-09-13 2013-07-23 Seiko Epson Corporation Sealed electric element package
JP2006210994A (en) * 2005-01-25 2006-08-10 Kyocera Corp Mounting structure of surface acoustic wave element, high frequency module and communication apparatus
JP4624117B2 (en) * 2005-01-25 2011-02-02 京セラ株式会社 Surface acoustic wave device mounting structure, high frequency module and communication device
JP2009302248A (en) * 2008-06-12 2009-12-24 Mitsubishi Electric Corp Electronic component package and its manufacturing method
JP2013247359A (en) * 2012-05-23 2013-12-09 Freescale Semiconductor Inc Cavity-type semiconductor package and method of packaging the same
US11929731B2 (en) 2018-02-18 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
US11949399B2 (en) 2018-06-15 2024-04-02 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US11936361B2 (en) 2018-06-15 2024-03-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators
US11824520B2 (en) 2018-06-15 2023-11-21 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11831289B2 (en) 2018-06-15 2023-11-28 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US11870423B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator
US11870424B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
US11876498B2 (en) 2018-06-15 2024-01-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US11881834B2 (en) 2018-06-15 2024-01-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US12095446B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11888465B2 (en) 2018-06-15 2024-01-30 Murata Manufacturing Co., Ltd. Bandpass filter with frequency separation between shunt and series resonators set by dielectric layer thickness
US11888463B2 (en) 2018-06-15 2024-01-30 Murata Manufacturing Co., Ltd. Multi-port filter using transversely-excited film bulk acoustic resonators
US11901874B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer
US11901878B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer
US11909381B2 (en) 2018-06-15 2024-02-20 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
US12095448B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
US11916540B2 (en) 2018-06-15 2024-02-27 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with periodic etched holes
US11923821B2 (en) 2018-06-15 2024-03-05 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US11929727B2 (en) 2018-06-15 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US12021502B2 (en) 2018-06-15 2024-06-25 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multi-mark electrodes and optimized electrode thickness
US11929735B2 (en) 2018-06-15 2024-03-12 Murata Manufacturing Co., Ltd. XBAR resonators with non-rectangular diaphragms
US12015393B2 (en) 2018-06-15 2024-06-18 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
US11817840B2 (en) 2018-06-15 2023-11-14 Murata Manufacturing Co., Ltd. XBAR resonators with non-rectangular diaphragms
US11942922B2 (en) 2018-06-15 2024-03-26 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US12095445B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. High power acoustic resonators
US12088280B2 (en) 2018-06-15 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US12021504B2 (en) 2018-06-15 2024-06-25 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a front-side dielectric layer and optimized pitch and mark
US12034428B2 (en) 2018-06-15 2024-07-09 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic filter using pitch to establish frequency separation between resonators
US11967942B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic filters with symmetric layout
US12040778B2 (en) 2018-06-15 2024-07-16 Murata Manufacturing Co., Ltd. High frequency, high power film bulk acoustic resonators
US11967945B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd. Transversly-excited film bulk acoustic resonators and filters
US12088272B2 (en) 2018-06-15 2024-09-10 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonator
US11984868B2 (en) 2018-06-15 2024-05-14 Murata Manufacturing Co., Ltd. Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
US11984872B2 (en) 2018-06-15 2024-05-14 Murata Manufacturing Co., Ltd. Film bulk acoustic resonator fabrication method
US11990888B2 (en) 2018-06-15 2024-05-21 Murata Manufacturing Co., Ltd. Resonator using YX-cut lithium niobate for high power applications
US12081187B2 (en) 2018-06-15 2024-09-03 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator
US12040781B2 (en) 2018-06-15 2024-07-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US11996822B2 (en) 2018-06-15 2024-05-28 Murata Manufacturing Co., Ltd. Wide bandwidth time division duplex transceiver
US12088270B2 (en) 2019-04-05 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
JP2022525465A (en) * 2019-04-05 2022-05-16 レゾナント インコーポレイテッド Laterally Excited Film Bulk Acoustic Resonator Package and Method
US12095438B2 (en) 2019-04-05 2024-09-17 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
US12095437B2 (en) 2019-04-05 2024-09-17 Murata Manufacturing Co., Ltd. Method of fabricating transversely-excited film bulk acoustic resonator
US11955952B2 (en) 2019-06-24 2024-04-09 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited bulk acoustic resonator split ladder filter
US12113517B2 (en) 2019-06-24 2024-10-08 Murata Manufacturing Co., Ltd. Transversely-excited bulk acoustic resonator split ladder filter
US11949403B2 (en) 2019-08-28 2024-04-02 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US12009804B2 (en) 2019-08-28 2024-06-11 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US11996826B2 (en) 2020-02-18 2024-05-28 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with thermally conductive etch-stop layer
US12081198B2 (en) 2020-02-18 2024-09-03 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a back-side dielectric layer and an etch-stop layer
US11967946B2 (en) 2020-02-18 2024-04-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a bonding layer and an etch-stop layer
US12028049B2 (en) 2020-02-28 2024-07-02 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator filters with sub-resonators having different mark and pitch
US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US12040783B2 (en) 2020-04-20 2024-07-16 Murata Manufacturing Co., Ltd. Low loss transversely-excited film bulk acoustic resonators and filters
US12040779B2 (en) 2020-04-20 2024-07-16 Murata Manufacturing Co., Ltd. Small transversely-excited film bulk acoustic resonators with enhanced Q-factor
US11811391B2 (en) 2020-05-04 2023-11-07 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with etched conductor patterns
US11967943B2 (en) 2020-05-04 2024-04-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with etched conductor patterns
US11996825B2 (en) 2020-06-17 2024-05-28 Murata Manufacturing Co., Ltd. Filter using lithium niobate and rotated lithium tantalate transversely-excited film bulk acoustic resonators
US12028040B2 (en) 2020-07-18 2024-07-02 Murata Manufacturing Co., Ltd. Acoustic resonators and filters with reduced temperature coefficient of frequency
US11949402B2 (en) 2020-08-31 2024-04-02 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US12119808B2 (en) 2020-10-28 2024-10-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US11936358B2 (en) 2020-11-11 2024-03-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
US11881835B2 (en) 2020-11-11 2024-01-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
US12003226B2 (en) 2020-11-11 2024-06-04 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic resonator with low thermal impedance
US12088281B2 (en) 2021-02-03 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multi-mark interdigital transducer
US12113512B2 (en) 2021-03-29 2024-10-08 Murata Manufacturing Co., Ltd. Layout of XBARs with multiple sub-resonators in parallel
US12119798B2 (en) 2023-01-12 2024-10-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method

Similar Documents

Publication Publication Date Title
JP2003078389A (en) Surface acoustic wave device and its manufacturing method
US7211934B2 (en) Electronic device and method of manufacturing the same
US8749114B2 (en) Acoustic wave device
US6815869B2 (en) Surface acoustic wave device
JPWO2006001125A1 (en) Piezoelectric device
JPH1155066A (en) Surface elastic wave device and its producing method
JPH04293310A (en) Surface acoustic wave device
JP3418373B2 (en) Surface acoustic wave device and method of manufacturing the same
KR20010081032A (en) Surface acoustic wave device and method of producing the same
JPH11122072A (en) Surface acoustic wave device
JP2001345673A (en) Surface acoustic wave device
JPH02186662A (en) Elastic surface wave element package
JP2003283289A (en) Surface acoustic wave device
JP2004253937A (en) Surface acoustic wave filter and its manufacturing method
JPH05291864A (en) Sample-and hold circuit element mount circuit and its manufacture
JP3710560B2 (en) Surface acoustic wave device mounting structure and mounting method
JP2001102905A (en) Surface acoustic wave device
JP4084188B2 (en) Surface acoustic wave device
JP4556637B2 (en) Functional element body
JP4673670B2 (en) Method for manufacturing piezoelectric device
JPH10215142A (en) Surface acoustic wave device
JP2004207674A (en) Method for producing electronic component
JP2000353934A (en) Surface acoustic wave device
JP3728813B2 (en) Electronic components
JP3456361B2 (en) Electronic component package

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040901

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041026

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041220

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20050701

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051220

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060516