JP2004207674A - Method for producing electronic component - Google Patents

Method for producing electronic component Download PDF

Info

Publication number
JP2004207674A
JP2004207674A JP2003151705A JP2003151705A JP2004207674A JP 2004207674 A JP2004207674 A JP 2004207674A JP 2003151705 A JP2003151705 A JP 2003151705A JP 2003151705 A JP2003151705 A JP 2003151705A JP 2004207674 A JP2004207674 A JP 2004207674A
Authority
JP
Japan
Prior art keywords
electronic component
exterior resin
resin
outer peripheral
peripheral sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003151705A
Other languages
Japanese (ja)
Inventor
Masafumi Hisataka
将文 久高
Ko Matsuo
香 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2003151705A priority Critical patent/JP2004207674A/en
Publication of JP2004207674A publication Critical patent/JP2004207674A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin electronic component exhibiting excellent mountability in which coating resin is protected against chipping or cracking, and to provide its producing method. <P>SOLUTION: After level difference is reduced by filling the gap between surface acoustic wave elements 2 with side face coating resin 6, upper surface coating resin 7 is printed on the other major surface of the surface acoustic wave element 2 and on the upper surface of the side face coating resin 6. The gap between surface acoustic wave elements 2 is filled with side face coating resin 6 such that the cross-section is curved arcuately. First upper surface of the side face coating resin 6 touching the surface acoustic wave element 2 is flush with the upper surface of the surface acoustic wave element 2 and the second upper surface at a cutting part in sixth process is located lower than the first upper surface. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は電子部品素子をフリップチップ実装し、薄型化を図った電子部品装置の製造方法に関するものである。
【0002】
【従来の技術】
近年、携帯電話等に代表されるように、電子機器の小型化、軽量化に伴い、電子機器に使用される電子部品装置も小型化、薄型化が要求されている。
【0003】
このような状況のなか、従来、電子部品素子とベース基板とを所定の間隔をおいてハンダバンプ部材によりフリップチップ実装し、樹脂で封止した電子部品装置として図7に示す電子部品装置100が知られている。電子部品装置100の電子部品素子101には接続電極102が、ベース基板105には素子接続用電極106が形成されている。電子部品素子101は接続電極102とベース基板105の素子接続用電極106とが対向するように配置され、ハンダバンプ部材103にて接続電極102と素子接続用電極106とが接続されることによって、電子部品素子101はベース基板103にフリップチップ実装されている。ベース基板103には素子接続用電極106を取り囲むようにダム107が形成されている。その後、電子部品素子101の上からエポキシ系の外装樹脂108を滴下し、100℃から150℃の温度で数時間加熱処理を行うことで硬化させ、電子部品素子101を封止する。このとき、ダム107によって外装樹脂108が電子部品素子101とベース基板105との隙間から内部に侵入するのを防止されるため、隙間は気密状態になる(特許文献1参照。)。
【0004】
【特許文献1】
特開平10−98134号公報
【0005】
【発明が解決しようとする課題】
しかしながら、上述の従来の電子部品装置100においては、液状の外装樹脂108を電子部品素子101の上から滴下し、その状態で加熱硬化して形成しているため、硬化後の樹脂層は電子部品素子101上面に均一に広がらずその断面形状は山なりに湾曲した形状になる。従って、樹脂層の厚みも比較的厚く形成されるため、電子部品装置100自体の厚みも厚くなり、また液状の外装樹脂108の粘度やチクソ性の変動による製品間のバラツキも発生していた。
【0006】
従って、従来の電子部品装置100の樹脂形成方法では、外装樹脂108の厚みが必要以上に厚く形成されてしまい、電子部品装置の小型化、薄型化の要求に対して十分対応することができなかった。また、電子部品装置100の上面が山なりに湾曲した形状になり平坦面でないことから、マザーボードへの実装時にマウンターの吸着ノズルによる吸着がうまくゆかず吸着ミスが発生し、その結果、生産性が低下する問題も生じていた。
【0007】
本発明は上述の課題に鑑みて案出されたものであり、その目的は、薄型で寸法ばらつきがなく、実装性に優れた電子部品装置及びその製造方法を提供することにある。
【0008】
【課題を解決するための手段】
上述の課題を解決するために本発明の電子部品装置の製造方法は、 一方主面に接続電極及び外周封止電極が形成された電子部品素子と、
ハンダバンプ部材を介して前記接続電極と接続する素子接続用電極、接合部材を介して前記外周封止電極と接合する外周封止導体膜及び外部端子電極が夫々形成されたベース基板とを、
前記ベース基板と前記電子部品素子との間に所定間隔が形成されるようにして接合するとともに、
前記電子部品素子の側面及び前記接合部材の外周面に側面外装樹脂を、及び前記電子部品素子の他方主面に上面外装樹脂をそれぞれ被覆した電子部品装置の製造方法であって、
前記接続電極及び外周封止電極が形成された電子部品素子を準備する工程と、
前記素子接続用電極、前記外周封止導体膜及び外部端子電極が形成されたベース基板が複数連続する集合基板を準備する工程と、
前記集合基板の各ベース基板領域上の素子接続用電極と外周封止導体膜に、前記ハンダバンプ部材及び接合部材を形成する工程と、
前記集合基板上のハンダバンプ部材及び接合部材に前記電子部品素子の接続電極及び外周封止電極を対向させて、前記電子部品素子を前記集合基板の各ベース基板領域に載置するとともに、前記ハンダバンプ部材を介して前記接続電極と素子接続用電極とを接続し、且つ前記接合部材を介して前記外周封止電極と外周封止導体膜とを接合する工程と、
前記集合基板上に接合された前記電子部品素子間に、側面外装樹脂となる樹脂を充填する工程と、
前記電子部品素子の他方主面及び側面外装樹脂上に、上面外装樹脂となる樹脂を印刷する工程と、
前記側面外装樹脂となる樹脂及び前記上面外装樹脂となる樹脂を同時硬化する工程と、
前記側面外装樹脂及び集合基板を、ベース基板領域毎に切断する工程とから成ることを特徴とする電子部品装置の製造方法である。
【0009】
また、前記電子部品素子間に充填される側面外装樹脂は、前記電子部品素子に接する位置の第1の上面が前記電子部品素子の上面と同一であり、且つ前記側面外装樹脂が切断される部位の第2の上面が、前記第1の上面より低い位置になるように設定されることである。
【0010】
また、前記上面外装樹脂に含有されるフィラーの粒径が、最大粒径30μmである。さらに、前記上面外装樹脂は、カーボンブラックを含有するエポキシ樹脂である。
【0011】
【作用】
本発明によれば、電子部品素子に側面外装樹脂と上面外装樹脂は、電子部品素子間に側面外装樹脂を充填する工程と、電子部品素子の他方主面及び側面外装樹脂上面に上面外装樹脂を印刷する工程と、側面外装樹脂と上面外装樹脂を同時硬化させる工程により形成されている。即ち、電子部品素子間に側面外装樹脂を充填し電子部品素子間のギャップを埋めた後、印刷にて電子部品素子の他方主面及び側面外装樹脂上面に上面外装樹脂を形成する。これにより、上面外装樹脂の印刷時において、電子部品素子間の段差が低減されるため、電子部品素子の他方主面と側面樹脂の上面に、上面外装樹脂を均一に薄い膜厚で被着形成することができる。即ち、電子部品装置の薄型化が可能になるとともに、電子部品素子部分においては平坦な面が形成されるため、マザーボード実装時でのマウンター装置の吸着ミスが発生することがなく、実装性に優れた電子部品装置となる。
【0012】
また本発明によれば、充填する側面外装樹脂の電子部品素子に接する第1の上面は、電子部品素子の上面と同一であり、側面外装樹脂の切断される部位に位置する第2の上面は、第1の上面より低い位置にある。即ち、側面外装樹脂は、電子部品素子間において断面が弓状に湾曲した形状となっており、その上面に被着される上面外装樹脂も湾曲した形状に沿って形成される。従って、個々に切断された後の電子部品装置においては、上面外装樹脂が電子部品素子部分では平坦に形成されているが、側面外装樹脂部分では外側に向かってRのついた形状として形成される。これによって、上面外装樹脂は厚みの薄い層でありながら、エッジ部が面取りされているため、外部からの衝撃に対してもチッピングやクラック等が発生することなく樹脂層を維持することができる。
【0013】
また、上面外装樹脂に含有されるフィラーの粒径が、最大粒径30μmであるため、上述の薄型化が達成でき、しかも、平坦度が安定できる。さらに、上面外装樹脂は、カーボンブラックを含有するエポキシ樹脂であり、カーボンブラックの粒子径は10nm〜500nmと非常に細かい粒子であるため、薄い層厚の外装樹脂を形成できる。
【0014】
【発明の実施の形態】
以下、本発明の電子部品装置の製造方法を図面に基づき詳説する。なお、説明にあたっては電子部品素子として弾性表面波素子を用いた弾性表面波装置(電子部品装置)を例にとって説明を行う。
【0015】
図1は本発明にかかる弾性表面波装置の断面図であり、図2は弾性表面波装置に用いるベース基板の平面図である。
【0016】
弾性表面波装置(電子部品装置)1は、弾性表面波素子(電子部品素子)2、ベース基板3、ハンダバンプ部材4、接合部材5、側面外装樹脂6、上面外装樹脂7より構成される。
【0017】
弾性表面波素子2は弾性表面波共振子、弾性表面波フィルタなどが例示でき、水晶やニオブ酸リチウム、タンタル酸リチウムなどの圧電基板20の一方主面上に図示しないインターデジタルトランスデューサー電極(本発明では櫛歯状電極及び反射器電極を含み、以下単にIDT電極という)が形成され、さらに、このIDT電極と接続する接続電極8が形成されている。また、この圧電基板20の外周には全周にわたって、IDT電極や接続電極8を取り囲むように環状の外周封止電極9が形成されている。これらの各電極は、例えばAl、Cuなどをフォトリソグラフィ技術により形成され、また、必要に応じてその表面にCr、Ni、Auなどの層が形成される。
【0018】
ベース基板3は、図1,図2に示すように、例えば、ガラスーセラミック材料などの多層基板から成り、表面には、弾性表面波素子2の接続電極8と対向する素子接続用電極10、及び外周封止電極9と対向する環状の外周封止導体膜11が形成されている。また、ベース基板3の底面には、外部端子電極12が形成されており、素子接続電極10と外部端子電極12とはビアホール導体13を含む内部配線パターンにて接続されている。
【0019】
ハンダバンプ部材4は、図1に示すように、接続電極8とベース基板3の素子接続用電極10とを接続するとともに、弾性表面波素子1の一方主面とベース基板3の表面との間に所定の空隙を形成する。
【0020】
接合部材5は、図1に示すように、外周封止電極9と外周封止導体膜11とを接合することで、弾性表面波素子2の一方主面とベース基板3の表面との間の空隙を封止し、空隙内部気密に保つことができ、湿気の侵入などによるIDT電極の劣化を防止する。
【0021】
側面外装樹脂6は、弾性表面波素子2、外周封止電極9、外周封止導体膜11、及び接合部材5の側面外周を覆って被着形成している。
【0022】
上面外装樹脂7は、弾性表面波素子2の他方主面と側面外装樹脂6の上面を覆って被着形成している。
【0023】
上述の弾性表面波素子1の製造方法は、図3(a)〜(f)に示す工程を有している。
【0024】
まず、第1の工程にて、接続電極8及び外周封止電極9が形成された弾性表面波素子2を準備する(図3(a)参照。)。続いて、第2の工程にて、接続電極8と接続する素子接続用電極10、及び外周封止電極9と接合する外周封止導体膜11及び外部端子電極12が形成されたベース基板3を複数連続した集合基板14を準備する(図3(b)参照。)。この集合基板14に、第3の工程にて、素子接続用電極10と外周封止導体膜11にハンダバンプ部材4及び接合部材5を形成する。このハンダバンプ部材4及び接合部材5は、例えばハンダから成り、ハンダペーストを塗布し、加熱溶融して形成する。これにより、溶融したハンダペーストは、表面張力により、素子接続用電極10上や外周封止導体膜11上で断面概略半円形状の突起となる(図3(c)参照。)。
【0025】
そして、第4の工程にて、弾性表面波素子2を接続電極8と素子接続電極10とが、外周封止電極9と外周封止導体膜11とが対向するように、集合基板14上に複数載置し、例えばハンダリフロー処理等を施すことによってハンダバンプ部材4を介して接続電極8と素子接続用電極10とを接続するとともに、接合部材5を介して外周封止電極9と外周封止導体膜11とを接合する(図3(d)参照。)。これにより、ハンダバンプ部材4及び接合部材5の高さに相当する空隙が、弾性表面波素子2の一方主面とベース基板3の表面との間にでき、かつ、気密封止されるため、弾性表面波素子2の主面において安定した弾性表面波を振動させることができる。続いて、第5の工程にて、まず側面外装樹脂6を集合基板14上の弾性表面波素子2間に充填する。この側面外装樹脂6は例えば、エポキシ系の樹脂であり、溶剤分を含有し流動性を有する液状樹脂であるため、弾性表面波素子2間に流し込むことによって充填する。次に、上面外装樹脂7を弾性表面波素子2の他方主面及び側面外装樹脂6上面にスクリーン印刷等の手法により形成した後、例えば、温度150℃にて1時間加熱することで、側面外装樹脂6と上面外装樹脂7とを同時硬化する(図3(e)参照。)。そして、第6の工程にて、ダイシングソーなどを用いて弾性表面波素子2間を切断し個々に分離することで、弾性表面波装置1となる(図3(f)参照。)。
【0026】
ここで本発明の特徴的なことは、電子部品素子2に側面外装樹脂6と上面外装樹脂7を形成する第5の工程は、弾性表面波素子2間に側面外装樹脂6を充填する工程と、弾性表面波素子2の他方主面及び側面外装樹脂6上面に上面外装樹脂7を印刷する工程と、側面外装樹脂6と上面外装樹脂7を同時硬化させる工程とを有していることである。即ち、弾性表面波素子2間に側面外装樹脂6を充填して弾性表面波素子2間のギャップを埋め、段差を低減した後で、印刷にて弾性表面波素子2の他方主面及び側面外装樹脂6上面に上面外装樹脂7を形成する。これにより、弾性表面波素子2の他方主面と側面樹脂6の上面に、上面外装樹脂7を均一に薄い膜厚で被着形成することができる。また、この上面外装樹脂7は、最大粒径10μm〜30μm(最大で30μm)のフィラーを含有しているため、層厚は最大フィラー径、即ち30μmの厚みで形成できる。弾性表面波装置1の薄型化のためには、上面外装樹脂7の層厚は薄いほど好ましいが、薄くしすぎると樹脂層の強度が低下し第6の工程にてダイシングソーなどにて弾性表面波素子2間を切断し個々に分離する時に、クラックや剥がれが生じてしまう。従って実用的に耐えうる最小層厚30μmを確保するために、最大粒径10μm〜30μmのフィラーを含有している。
【0027】
更に、上面外装樹脂7がカーボンブラックを含有しているエポキシ樹脂であれば、カーボンブラックの粒子径は10nm〜500nmと非常に細かい粒子であるため、薄い層厚の上面外装樹脂7が形成できる。
【0028】
更にまた、本発明の特徴的なことは、第5の工程において、側面外装樹脂6を充填した際に、側面外装樹脂6は、弾性表面波素子2間において断面が弓状に湾曲した形状に充填され、側面外装樹脂6の弾性表面波素子2に接する第1の上面は、弾性表面波素子2の上面と同一であり、第6の工程において切断される部位に位置する第2の上面は、第1の上面より低い位置にあることである。これは図4(a)に示すように、側面外装樹脂6は溶剤成分を含んだ液状樹脂であり、充填されたときには毛管現象によって、弾性表面波素子2と接する部分の液面が高くなることによる。この状態で図4(b)に示すように上面外装樹脂7を印刷し、側面外装樹脂6と上面外装樹脂7とを同時硬化することによって、上面外装樹脂7も側面外装樹脂6部分においては、断面が弓状に湾曲した形状に形成される。即ち、図5に示すように第6の工程にて切断線X−X’に沿って個々に切断された後の弾性表面波装置1においては、上面外装樹脂7が弾性表面波素子2部分では平坦に形成されているが、側面外装樹脂6部分では外側に向かってRのついた形状として形成される。このとき、側面外装樹脂は、例えば、無機フィラー比率60〜73wt%、エポキシ樹脂成分12〜23wt%、硬化剤成分8〜15wt%、シリコン弾性体成分0.7〜1wt%からなる熱硬化型の樹脂であり、加熱硬化時にエポキシ樹脂成分の硬化により体積収縮が発生し、断面が弓状に湾曲する形態がさらに強まり、より効果的な形状が得られる。
【0029】
尚、上述の実施例では、電子部品素子として弾性表面波素子を用いた弾性表面波装置の例を示したが、電子部品素子の種類を問わず、電子部品素子をハンダパンプ及び接合部材を用いてベース基板に接続し、且つ外装部材で被覆した電子部品装置の製造方法に対して本発明が広く適用できることは言うまでもない。
【0030】
例えば、図6は、弾性表面波素子に代えて圧電共振素子を利用した圧電装置に本発明を適用した例を模式的に示す断面図である。
【0031】
同図において、圧電装置300は、圧電素子30、ベース基板3、ハンダバンプ部材4、ハンダ接合部材5、外装部材6より構成されている。圧電素子30以外の構成は図1に示した弾性表面波装置1と全く同じであり、製造方法についても、弾性表面波素子を圧電素子に置き換えれば、図3に示した製造方法と全く同じである。
【0032】
圧電素子30は、圧電共振子や、複数の圧電共振子を組み合わせたフィルタやデュプレクサなどが例示でき、例えば、シリコンからなる基体31の一方主面上に、間に窒化アルミニウムからなる圧電体層32が介在されている一対の振動電極33、この振動電極33とそれぞれ接続される接続電極8が形成されている。さらに、基体31の一方主面の外周には、圧電素子30とベース基板3との間に形成される間隙を気密封止する為の環状の外周封止電極9が形成されている。尚、振動電極33の振動領域上には空隙34が形成されており、振動の減衰が防止されている。
【0033】
また、振動電極33はモリブデン、タングステン、アルミニウムなどからなるが、接続電極8と外周封止電極9には必要に応じてクロム層、ニッケル層、金層などからなる表面層が形成され、ハンダとの接続性を良好なものとしている。
【0034】
上述のような構成とすることにより、圧電素子30は、圧電体層32の厚み方向の振動を利用した共振器もしくはその共振器を複数個組み合わせたフィルタやデュプレクサなどとして動作し、このような圧電装置300の製造方法においても小型で信頼性及び生産性の高い圧電装置を構成することができる。
【0035】
【発明の効果】
本発明の電子部品装置の製造方法によれば、電子部品素子の他方主面と側面樹脂の上面に、上面外装樹脂を均一に薄い膜厚で被着形成することができる。即ち、電子部品装置の薄型化が可能になるとともに、電子部品素子部分においては平坦な面が形成されるため、マザーボード実装時でのマウンター装置の吸着ミスが発生することがなく、実装性に優れた電子部品装置となる。
【0036】
また、上面外装樹脂は電子部品素子部分では平坦に形成されているが、側面外装樹脂部分では外側に向かってRのついた形状として形成される。これによって、上面外装樹脂は厚みの薄い層でありながら、エッジ部が面取りされているため、外部からの衝撃に対してもチッピングやクラック等が発生することなく樹脂層を維持することができる。
【図面の簡単な説明】
【図1】本発明の電子部品装置の断面図である。
【図2】本発明の電子部品装置に用いるベース基板の平面図である。
【図3】(a)〜(f)は、本発明の電子部品装置の製造方法の各工程を説明する断面図である。
【図4】(a)は側面外装樹脂の形成状態を示す断面図であり、(b)は上面外装樹脂の形成状態を示す断面図である。
【図5】(a)は上面外装樹脂のエッジ部を示す断面図であり、(b)は(a)のA部拡大図である。
【図6】本発明を適用した圧電装置の構造を模式的に示す断面図である。
【図7】従来の電子部品装置の断面図である。
【符号の説明】
1・・・弾性表面波装置
2・・・弾性表面波素子
3・・・ベース基板
4・・・ハンダバンプ部材
5・・・接合部材
6・・・側面外装樹脂
7・・・上面外装樹脂
8・・・接続電極
9・・・外周封止電極
10・・・素子接続用電極
11・・・外周封止導体膜
30・・・圧電素子
300・・・圧電装置
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing an electronic component device in which an electronic component element is flip-chip mounted to reduce the thickness.
[0002]
[Prior art]
2. Description of the Related Art In recent years, as electronic devices have become smaller and lighter, as typified by mobile phones and the like, electronic component devices used in electronic devices have also been required to be smaller and thinner.
[0003]
Under such circumstances, an electronic component device 100 shown in FIG. 7 is conventionally known as an electronic component device in which an electronic component element and a base substrate are flip-chip mounted at predetermined intervals by solder bump members and sealed with resin. Have been. A connection electrode 102 is formed on an electronic component element 101 of the electronic component device 100, and an element connection electrode 106 is formed on a base substrate 105. The electronic component element 101 is arranged such that the connection electrode 102 and the element connection electrode 106 of the base substrate 105 face each other, and the connection electrode 102 and the element connection electrode 106 are connected by the solder bump member 103, so that the electronic component element 101 is electrically connected. The component element 101 is flip-chip mounted on the base substrate 103. A dam 107 is formed on the base substrate 103 so as to surround the element connection electrode 106. Thereafter, an epoxy-based exterior resin 108 is dropped from above the electronic component element 101, and cured by performing a heat treatment at a temperature of 100 ° C. to 150 ° C. for several hours, thereby sealing the electronic component element 101. At this time, since the exterior resin 108 is prevented from entering the inside from the gap between the electronic component element 101 and the base substrate 105 by the dam 107, the gap becomes airtight (see Patent Document 1).
[0004]
[Patent Document 1]
JP-A-10-98134 [0005]
[Problems to be solved by the invention]
However, in the above-mentioned conventional electronic component device 100, since the liquid exterior resin 108 is dropped from above the electronic component element 101 and formed by heating and curing in this state, the cured resin layer is formed of the electronic component. The cross-sectional shape does not spread uniformly on the upper surface of the element 101, and has a mountain-like curved shape. Accordingly, since the thickness of the resin layer is relatively large, the thickness of the electronic component device 100 itself is also increased, and variations between products due to fluctuations in the viscosity and thixotropy of the liquid exterior resin 108 have occurred.
[0006]
Therefore, in the conventional resin forming method of the electronic component device 100, the thickness of the exterior resin 108 is formed more than necessary, and it is not possible to sufficiently cope with the demand for downsizing and thinning of the electronic component device. Was. In addition, since the upper surface of the electronic component device 100 is curved in a mountain-like shape and is not flat, the suction by the suction nozzle of the mounter does not work well during mounting on the motherboard, and a suction error occurs. As a result, productivity is reduced. There was also a problem of lowering.
[0007]
The present invention has been devised in view of the above-described problems, and an object of the present invention is to provide an electronic component device which is thin, has no dimensional variation, and has excellent mountability, and a method of manufacturing the same.
[0008]
[Means for Solving the Problems]
In order to solve the above-described problems, a method for manufacturing an electronic component device of the present invention includes: an electronic component element having a connection electrode and an outer peripheral sealing electrode formed on one main surface;
An element connection electrode connected to the connection electrode via a solder bump member, an outer peripheral sealing conductor film joined to the outer peripheral sealing electrode via a joining member, and a base substrate on which an external terminal electrode is formed,
Along with joining such that a predetermined interval is formed between the base substrate and the electronic component element,
A method for manufacturing an electronic component device in which a side surface exterior resin is applied to a side surface of the electronic component element and an outer peripheral surface of the joining member, and an upper surface exterior resin is applied to the other main surface of the electronic component element,
A step of preparing an electronic component element on which the connection electrode and the outer peripheral sealing electrode are formed,
A step of preparing an aggregate substrate in which a plurality of base substrates on which the element connection electrodes, the outer peripheral sealing conductor film and the external terminal electrodes are formed are continuous;
A step of forming the solder bump member and the bonding member on the element connection electrode and the outer peripheral sealing conductor film on each base substrate region of the collective substrate,
The connection electrode and the outer peripheral sealing electrode of the electronic component element are opposed to the solder bump member and the joining member on the collective substrate, and the electronic component element is mounted on each base substrate region of the collective substrate, and the solder bump member A step of connecting the connection electrode and the element connection electrode through, and bonding the outer peripheral sealing electrode and the outer peripheral sealing conductor film through the bonding member;
A step of filling a resin serving as a side surface exterior resin between the electronic component elements bonded on the collective substrate,
On the other main surface and the side exterior resin of the electronic component element, a step of printing a resin to be an upper exterior resin,
Simultaneously curing the resin to be the side exterior resin and the resin to be the top exterior resin,
Cutting the side surface exterior resin and the collective substrate for each base substrate region.
[0009]
The side surface exterior resin filled between the electronic component elements has a first upper surface at a position in contact with the electronic component element which is the same as the upper surface of the electronic component element, and a portion where the side surface exterior resin is cut. Is set to be lower than the first upper surface.
[0010]
The particle size of the filler contained in the upper exterior resin is a maximum particle size of 30 μm. Further, the upper exterior resin is an epoxy resin containing carbon black.
[0011]
[Action]
According to the present invention, the side exterior resin and the top exterior resin in the electronic component element are filled with the side exterior resin between the electronic component elements, and the top exterior resin is applied to the other main surface and the side exterior resin upper surface of the electronic component element. It is formed by a printing step and a step of simultaneously curing the side exterior resin and the top exterior resin. That is, after filling the gap between the electronic component elements by filling the side exterior resin between the electronic component elements, the upper exterior resin is formed on the other main surface of the electronic component element and the upper surface of the side exterior resin by printing. As a result, the step between the electronic component elements is reduced during printing of the upper exterior resin, so that the upper exterior resin is uniformly formed with a thin film thickness on the other main surface of the electronic component element and the upper surface of the side resin. can do. In other words, the electronic component device can be made thinner, and a flat surface is formed in the electronic component element portion, so that there is no occurrence of a suction error of the mounter device at the time of mounting on the motherboard, and the mountability is excellent. Electronic component device.
[0012]
Further, according to the present invention, the first upper surface of the side exterior resin to be filled, which is in contact with the electronic component element, is the same as the upper surface of the electronic component element, and the second upper surface located at the site where the side exterior resin is cut is , At a position lower than the first upper surface. That is, the side surface exterior resin has a cross-sectionally curved shape between the electronic component elements, and the upper surface exterior resin adhered to the upper surface thereof is also formed along the curved shape. Therefore, in the electronic component device after the individual cutting, the upper surface exterior resin is formed flat in the electronic component element portion, but is formed in the side exterior resin portion as a shape with a radius toward the outside. . Thus, the upper exterior resin is a thin layer, but the edge portion is chamfered, so that the resin layer can be maintained without chipping, cracking, and the like even when subjected to an external impact.
[0013]
In addition, since the maximum particle diameter of the filler contained in the upper exterior resin is 30 μm, the above-described reduction in thickness can be achieved, and the flatness can be stabilized. Furthermore, the upper surface exterior resin is an epoxy resin containing carbon black, and the carbon black has a very small particle diameter of 10 nm to 500 nm, so that an exterior resin having a thin layer thickness can be formed.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a method for manufacturing an electronic component device of the present invention will be described in detail with reference to the drawings. In the description, a surface acoustic wave device (electronic component device) using a surface acoustic wave element as an electronic component element will be described as an example.
[0015]
FIG. 1 is a sectional view of a surface acoustic wave device according to the present invention, and FIG. 2 is a plan view of a base substrate used in the surface acoustic wave device.
[0016]
The surface acoustic wave device (electronic component device) 1 includes a surface acoustic wave element (electronic component element) 2, a base substrate 3, a solder bump member 4, a joining member 5, a side exterior resin 6, and an upper exterior resin 7.
[0017]
The surface acoustic wave element 2 can be exemplified by a surface acoustic wave resonator, a surface acoustic wave filter, and the like. An interdigital transducer electrode (not shown) is formed on one main surface of a piezoelectric substrate 20 made of quartz, lithium niobate, lithium tantalate, or the like. In the present invention, a comb-shaped electrode and a reflector electrode are included, and the IDT electrode (hereinafter, simply referred to as an IDT electrode) is formed. Further, a connection electrode 8 connected to the IDT electrode is formed. Further, an annular outer peripheral sealing electrode 9 is formed on the entire outer periphery of the piezoelectric substrate 20 so as to surround the IDT electrode and the connection electrode 8. Each of these electrodes is formed of, for example, Al, Cu, or the like by a photolithography technique, and a layer of Cr, Ni, Au, or the like is formed on the surface as necessary.
[0018]
As shown in FIGS. 1 and 2, the base substrate 3 is made of, for example, a multi-layer substrate made of a glass-ceramic material or the like, and has, on its surface, an element connection electrode 10 facing the connection electrode 8 of the surface acoustic wave element 2; In addition, an annular outer peripheral sealing conductor film 11 facing the outer peripheral sealing electrode 9 is formed. An external terminal electrode 12 is formed on the bottom surface of the base substrate 3, and the element connection electrode 10 and the external terminal electrode 12 are connected by an internal wiring pattern including a via-hole conductor 13.
[0019]
As shown in FIG. 1, the solder bump member 4 connects the connection electrode 8 to the element connection electrode 10 of the base substrate 3, and also connects between the one main surface of the surface acoustic wave element 1 and the surface of the base substrate 3. A predetermined gap is formed.
[0020]
As shown in FIG. 1, the joining member 5 joins the outer peripheral sealing electrode 9 and the outer peripheral sealing conductor film 11 to form a connection between one main surface of the surface acoustic wave element 2 and the surface of the base substrate 3. The gap can be sealed, and the inside of the gap can be kept airtight, thereby preventing deterioration of the IDT electrode due to invasion of moisture or the like.
[0021]
The side surface exterior resin 6 is formed so as to cover the surface acoustic wave element 2, the outer periphery sealing electrode 9, the outer periphery sealing conductor film 11, and the outer periphery of the side surface of the bonding member 5.
[0022]
The upper surface exterior resin 7 is formed so as to cover the other main surface of the surface acoustic wave element 2 and the upper surface of the side surface exterior resin 6.
[0023]
The method for manufacturing the surface acoustic wave device 1 described above includes the steps shown in FIGS.
[0024]
First, in the first step, the surface acoustic wave element 2 on which the connection electrode 8 and the outer peripheral sealing electrode 9 are formed is prepared (see FIG. 3A). Subsequently, in a second step, the base substrate 3 on which the element connection electrode 10 connected to the connection electrode 8, the outer peripheral sealing conductor film 11 joined to the outer peripheral sealing electrode 9, and the external terminal electrode 12 are formed. A plurality of continuous collective substrates 14 are prepared (see FIG. 3B). In the third step, the solder bump members 4 and the joining members 5 are formed on the element connection electrodes 10 and the outer peripheral sealing conductor film 11 on the collective substrate 14. The solder bump member 4 and the joining member 5 are made of, for example, solder, and are formed by applying a solder paste and melting by heating. As a result, the molten solder paste becomes a projection having a substantially semicircular cross section on the element connection electrode 10 and the outer peripheral sealing conductor film 11 due to surface tension (see FIG. 3C).
[0025]
Then, in the fourth step, the surface acoustic wave element 2 is placed on the collective substrate 14 such that the connection electrode 8 and the element connection electrode 10 are opposed to the outer peripheral sealing electrode 9 and the outer peripheral sealing conductor film 11. The connection electrodes 8 and the element connection electrodes 10 are connected via the solder bump members 4 by performing a solder reflow process or the like by mounting a plurality of them, and the outer peripheral sealing electrodes 9 and the outer peripheral sealing electrodes 9 are joined via the joining members 5. The conductor film 11 is joined (see FIG. 3D). Thereby, a gap corresponding to the height of the solder bump member 4 and the joining member 5 is formed between one main surface of the surface acoustic wave element 2 and the surface of the base substrate 3 and is hermetically sealed. A stable surface acoustic wave can be vibrated on the main surface of the surface acoustic wave element 2. Subsequently, in a fifth step, first, the side surface exterior resin 6 is filled between the surface acoustic wave elements 2 on the collective substrate 14. The side surface exterior resin 6 is, for example, an epoxy-based resin, and is a liquid resin containing a solvent and having fluidity. Next, after the upper surface exterior resin 7 is formed on the other main surface of the surface acoustic wave element 2 and the upper surface of the side surface exterior resin 6 by a method such as screen printing, the upper surface exterior resin 7 is heated at a temperature of 150 ° C. for 1 hour, for example. The resin 6 and the upper exterior resin 7 are simultaneously cured (see FIG. 3E). Then, in the sixth step, the surface acoustic wave elements 2 are cut using a dicing saw or the like and separated into individual parts, thereby forming the surface acoustic wave device 1 (see FIG. 3F).
[0026]
Here, a characteristic feature of the present invention is that the fifth step of forming the side surface exterior resin 6 and the top surface exterior resin 7 on the electronic component element 2 includes a step of filling the side surface exterior resin 6 between the surface acoustic wave elements 2. A step of printing the upper surface exterior resin 7 on the other main surface and the upper surface of the side surface exterior resin 6 of the surface acoustic wave element 2, and a step of simultaneously curing the side surface exterior resin 6 and the upper surface exterior resin 7. . That is, after filling the gap between the surface acoustic wave elements 2 by filling the side surface covering resin 6 between the surface acoustic wave elements 2 and reducing the level difference, the other main surface and the side surface covering of the surface acoustic wave element 2 are printed. An upper exterior resin 7 is formed on the upper surface of the resin 6. Thereby, the upper surface exterior resin 7 can be uniformly formed with a small thickness on the other main surface of the surface acoustic wave element 2 and the upper surface of the side surface resin 6. Further, since the upper surface exterior resin 7 contains a filler having a maximum particle size of 10 μm to 30 μm (a maximum of 30 μm), the layer thickness can be formed with a maximum filler diameter, that is, a thickness of 30 μm. In order to make the surface acoustic wave device 1 thinner, it is preferable that the layer thickness of the upper surface exterior resin 7 is thinner. However, if the thickness is too thin, the strength of the resin layer is reduced. When the wave elements 2 are cut and separated individually, cracks and peeling occur. Therefore, in order to secure a minimum layer thickness of 30 μm that can be practically used, a filler having a maximum particle size of 10 μm to 30 μm is contained.
[0027]
Furthermore, if the upper surface exterior resin 7 is an epoxy resin containing carbon black, the particle size of the carbon black is very fine, 10 nm to 500 nm, so that the upper surface exterior resin 7 having a small layer thickness can be formed.
[0028]
Furthermore, a characteristic of the present invention is that, in the fifth step, when the side surface exterior resin 6 is filled, the side surface exterior resin 6 has a cross section curved between the surface acoustic wave elements 2 in an arcuate shape. The first upper surface of the side surface exterior resin 6 which is in contact with the surface acoustic wave element 2 is the same as the upper surface of the surface acoustic wave element 2, and the second upper surface located at the portion to be cut in the sixth step is , Lower than the first upper surface. This is because, as shown in FIG. 4 (a), the side surface exterior resin 6 is a liquid resin containing a solvent component, and when filled, the liquid level at a portion in contact with the surface acoustic wave element 2 becomes high due to a capillary phenomenon. by. In this state, as shown in FIG. 4B, the top exterior resin 7 is printed, and the side exterior resin 6 and the top exterior resin 7 are simultaneously cured. The cross section is formed in an arcuate shape. That is, in the surface acoustic wave device 1 after being individually cut along the cutting line XX ′ in the sixth step as shown in FIG. Although it is formed flat, it is formed in the side exterior resin 6 portion as a shape with a radius toward the outside. At this time, the side surface exterior resin is, for example, a thermosetting type resin composed of an inorganic filler ratio of 60 to 73 wt%, an epoxy resin component of 12 to 23 wt%, a curing agent component of 8 to 15 wt%, and a silicon elastic component of 0.7 to 1 wt%. It is a resin, and volume shrinkage occurs due to the curing of the epoxy resin component at the time of heat curing, so that the cross-section is more curvedly curved, and a more effective shape is obtained.
[0029]
In the above-described embodiment, an example of a surface acoustic wave device using a surface acoustic wave element as an electronic component element has been described. However, regardless of the type of the electronic component element, the electronic component element can be formed by using a solder pump and a joining member. Needless to say, the present invention can be widely applied to a method of manufacturing an electronic component device connected to a base substrate and covered with an exterior member.
[0030]
For example, FIG. 6 is a cross-sectional view schematically showing an example in which the present invention is applied to a piezoelectric device using a piezoelectric resonance element instead of a surface acoustic wave element.
[0031]
In the figure, a piezoelectric device 300 includes a piezoelectric element 30, a base substrate 3, a solder bump member 4, a solder bonding member 5, and an exterior member 6. The configuration other than the piezoelectric element 30 is exactly the same as the surface acoustic wave device 1 shown in FIG. 1, and the manufacturing method is exactly the same as the manufacturing method shown in FIG. 3 if the surface acoustic wave element is replaced with a piezoelectric element. is there.
[0032]
Examples of the piezoelectric element 30 include a piezoelectric resonator, a filter and a duplexer in which a plurality of piezoelectric resonators are combined, and, for example, a piezoelectric layer 32 made of aluminum nitride on one main surface of a substrate 31 made of silicon. Are formed, and a pair of vibrating electrodes 33 and connection electrodes 8 connected to the vibrating electrodes 33 are formed. Further, an annular outer peripheral sealing electrode 9 for hermetically sealing a gap formed between the piezoelectric element 30 and the base substrate 3 is formed on the outer periphery of one main surface of the base 31. A gap 34 is formed on the vibration area of the vibration electrode 33 to prevent the vibration from attenuating.
[0033]
The vibrating electrode 33 is made of molybdenum, tungsten, aluminum, or the like. A surface layer made of a chromium layer, a nickel layer, a gold layer, or the like is formed on the connection electrode 8 and the outer peripheral sealing electrode 9 as necessary. Has good connectivity.
[0034]
With the above-described configuration, the piezoelectric element 30 operates as a resonator using the vibration in the thickness direction of the piezoelectric layer 32 or a filter or a duplexer in which a plurality of the resonators are combined. Also in the method of manufacturing the device 300, a small-sized piezoelectric device having high reliability and high productivity can be formed.
[0035]
【The invention's effect】
According to the method for manufacturing an electronic component device of the present invention, the upper surface exterior resin can be uniformly formed with a small thickness on the other main surface of the electronic component element and the upper surface of the side resin. In other words, the electronic component device can be made thinner, and a flat surface is formed in the electronic component element portion, so that there is no occurrence of a suction error of the mounter device at the time of mounting on the motherboard, and the mountability is excellent. Electronic component device.
[0036]
Also, the upper surface exterior resin is formed flat in the electronic component element portion, but is formed in the side exterior resin portion as a shape with a radius toward the outside. Thus, the upper exterior resin is a thin layer, but the edge portion is chamfered, so that the resin layer can be maintained without chipping, cracking, and the like even when subjected to an external impact.
[Brief description of the drawings]
FIG. 1 is a sectional view of an electronic component device of the present invention.
FIG. 2 is a plan view of a base substrate used in the electronic component device of the present invention.
FIGS. 3A to 3F are cross-sectional views illustrating steps of a method for manufacturing an electronic component device according to the present invention.
FIG. 4A is a cross-sectional view illustrating a state of forming a side surface exterior resin, and FIG. 4B is a cross-sectional view illustrating a state of forming an upper side exterior resin.
FIG. 5A is a cross-sectional view showing an edge portion of a top exterior resin, and FIG. 5B is an enlarged view of a portion A of FIG.
FIG. 6 is a cross-sectional view schematically illustrating a structure of a piezoelectric device to which the present invention is applied.
FIG. 7 is a cross-sectional view of a conventional electronic component device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Surface acoustic wave device 2 ... Surface acoustic wave element 3 ... Base substrate 4 ... Solder bump member 5 ... Joining member 6 ... Side exterior resin 7 ... Top exterior resin 8 .. Connection electrode 9 ... outer peripheral sealing electrode 10 ... element connecting electrode 11 ... outer peripheral sealing conductor film 30 ... piezoelectric element 300 ... piezoelectric device

Claims (4)

一方主面に接続電極及び外周封止電極が形成された電子部品素子と、
ハンダバンプ部材を介して前記接続電極と接続する素子接続用電極、接合部材を介して前記外周封止電極と接合する外周封止導体膜及び外部端子電極が夫々形成されたベース基板とを、
前記ベース基板と前記電子部品素子との間に所定間隔が形成されるようにして接合するとともに、
前記電子部品素子の側面及び前記接合部材の外周面に側面外装樹脂を、及び前記電子部品素子の他方主面に上面外装樹脂をそれぞれ被覆した電子部品装置の製造方法であって、
前記接続電極及び外周封止電極が形成された電子部品素子を準備する工程と、
前記素子接続用電極、前記外周封止導体膜及び外部端子電極が形成されたベース基板が複数連続する集合基板を準備する工程と、
前記集合基板の各ベース基板領域上の素子接続用電極と外周封止導体膜に、前記ハンダバンプ部材及び接合部材を形成する工程と、
前記集合基板上のハンダバンプ部材及び接合部材に前記電子部品素子の接続電極及び外周封止電極を対向させて、前記電子部品素子を前記集合基板の各ベース基板領域に載置するとともに、前記ハンダバンプ部材を介して前記接続電極と素子接続用電極とを接続し、且つ前記接合部材を介して前記外周封止電極と外周封止導体膜とを接合する工程と、
前記集合基板上に接合された前記電子部品素子間に、側面外装樹脂となる樹脂を充填する工程と、
前記電子部品素子の他方主面及び側面外装樹脂上に、上面外装樹脂となる樹脂を印刷する工程と、
前記側面外装樹脂となる樹脂及び前記上面外装樹脂となる樹脂を同時硬化する工程と、
前記側面外装樹脂及び集合基板を、ベース基板領域毎に切断する工程とから成ることを特徴とする電子部品装置の製造方法。
On the other hand, an electronic component element having a connection electrode and an outer peripheral sealing electrode formed on a main surface,
An element connection electrode connected to the connection electrode via a solder bump member, an outer peripheral sealing conductor film joined to the outer peripheral sealing electrode via a joining member, and a base substrate on which an external terminal electrode is formed, respectively.
Along with joining such that a predetermined interval is formed between the base substrate and the electronic component element,
A method of manufacturing an electronic component device in which a side surface exterior resin is applied to a side surface of the electronic component element and an outer peripheral surface of the bonding member, and an upper surface exterior resin is applied to the other main surface of the electronic component element,
A step of preparing an electronic component element on which the connection electrode and the outer peripheral sealing electrode are formed,
A step of preparing an aggregate substrate in which a plurality of base substrates on which the element connection electrodes, the outer peripheral sealing conductor film and the external terminal electrodes are formed are continuous;
A step of forming the solder bump member and the bonding member on the element connection electrode and the outer peripheral sealing conductor film on each base substrate region of the collective substrate,
The connection electrode and the outer peripheral sealing electrode of the electronic component element are opposed to the solder bump member and the joining member on the collective substrate, and the electronic component element is mounted on each base substrate region of the collective substrate, and the solder bump member A step of connecting the connection electrode and the element connection electrode through, and bonding the outer peripheral sealing electrode and the outer peripheral sealing conductor film through the bonding member;
A step of filling a resin serving as a side surface exterior resin between the electronic component elements bonded on the collective substrate,
On the other main surface and the side exterior resin of the electronic component element, a step of printing a resin to be an upper exterior resin,
Simultaneously curing the resin to be the side exterior resin and the resin to be the top exterior resin,
Cutting the side exterior resin and the collective substrate for each base substrate region.
前記電子部品素子間に充填される側面外装樹脂は、前記電子部品素子に接する位置の第1の上面が前記電子部品素子の上面と同一であり、且つ前記側面外装樹脂の切断部位の第2の上面が、前記第1の上面より低い位置になるように設定されていることを特徴とする請求項1記載の電子部品装置の製造方法。The side exterior resin filled between the electronic component elements has a first upper surface at a position in contact with the electronic component element which is the same as the upper surface of the electronic component element, and a second cut portion of the side exterior resin. 2. The method according to claim 1, wherein an upper surface is set to be lower than the first upper surface. 前記上面外装樹脂は、最大粒径30μmのフィラーを含有していることを特徴とする請求項1または請求項2記載の電子部品装置の製造方法。The method for manufacturing an electronic component device according to claim 1, wherein the upper surface exterior resin contains a filler having a maximum particle diameter of 30 μm. 前記上面外装樹脂は、カーボンブラックを含有するエポキシ樹脂であることを特徴とする請求項1または請求項2記載の電子部品装置の製造方法。The method for manufacturing an electronic component device according to claim 1, wherein the upper surface exterior resin is an epoxy resin containing carbon black.
JP2003151705A 2002-10-30 2003-05-28 Method for producing electronic component Pending JP2004207674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003151705A JP2004207674A (en) 2002-10-30 2003-05-28 Method for producing electronic component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002316792 2002-10-30
JP2003151705A JP2004207674A (en) 2002-10-30 2003-05-28 Method for producing electronic component

Publications (1)

Publication Number Publication Date
JP2004207674A true JP2004207674A (en) 2004-07-22

Family

ID=32828257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003151705A Pending JP2004207674A (en) 2002-10-30 2003-05-28 Method for producing electronic component

Country Status (1)

Country Link
JP (1) JP2004207674A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006203149A (en) * 2004-12-24 2006-08-03 Fujitsu Media Device Kk Electronic component and its manufacturing method
JP2006210756A (en) * 2005-01-31 2006-08-10 Fujitsu Ltd Electronic device and manufacturing method therefor
JP2013138239A (en) * 2008-08-15 2013-07-11 Qualcomm Inc Corrosion control of stacked integrated circuits
CN105375903A (en) * 2007-11-20 2016-03-02 日本无线株式会社 Surface Acoustic Wave Element and Equipment for Measuring Characteristics of Liquid Material
JP6237969B1 (en) * 2017-03-29 2017-11-29 三菱電機株式会社 Hollow sealing device and manufacturing method thereof
US10199562B2 (en) 2016-07-28 2019-02-05 Taiyo Yuden Co., Ltd. Electronic device and method of fabricating the same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006203149A (en) * 2004-12-24 2006-08-03 Fujitsu Media Device Kk Electronic component and its manufacturing method
US7816794B2 (en) 2004-12-24 2010-10-19 Fujitsu Media Devices Limited Electronic device and method of fabricating the same
JP2006210756A (en) * 2005-01-31 2006-08-10 Fujitsu Ltd Electronic device and manufacturing method therefor
US7935573B2 (en) 2005-01-31 2011-05-03 Fujitsu Limited Electronic device and method for fabricating the same
CN105375903A (en) * 2007-11-20 2016-03-02 日本无线株式会社 Surface Acoustic Wave Element and Equipment for Measuring Characteristics of Liquid Material
CN105375903B (en) * 2007-11-20 2018-09-14 日本无线株式会社 Surface acoustic wave device and equipment for measuring characteristics of liquid material
JP2013138239A (en) * 2008-08-15 2013-07-11 Qualcomm Inc Corrosion control of stacked integrated circuits
US8618670B2 (en) 2008-08-15 2013-12-31 Qualcomm Incorporated Corrosion control of stacked integrated circuits
US10199562B2 (en) 2016-07-28 2019-02-05 Taiyo Yuden Co., Ltd. Electronic device and method of fabricating the same
JP6237969B1 (en) * 2017-03-29 2017-11-29 三菱電機株式会社 Hollow sealing device and manufacturing method thereof
WO2018179153A1 (en) * 2017-03-29 2018-10-04 三菱電機株式会社 Hollow sealed device and manufacturing method therefor
US10950567B2 (en) 2017-03-29 2021-03-16 Mitsubishi Electric Corporation Hollow sealed device and manufacturing method therefor

Similar Documents

Publication Publication Date Title
US7486160B2 (en) Electronic component and manufacturing method thereof
US7042056B2 (en) Chip-size package piezoelectric component
JP6743830B2 (en) Elastic wave device
US8749114B2 (en) Acoustic wave device
JP2004129222A (en) Piezoelectric component and manufacturing method thereof
JP2004214469A (en) Electronic device and its manufacturing method
JP5206377B2 (en) Electronic component module
JP2004129224A (en) Piezoelectric component and manufacturing method thereof
JP2017152870A (en) Acoustic wave device
JP2007081555A (en) Surface acoustic wave device
JP2004207674A (en) Method for producing electronic component
JP2005130341A (en) Piezoelectric component and its manufacturing method, communications equipment
US11362637B2 (en) Bulk acoustic wave structure, bulk acoustic wave device, and manufacturing method thereof
JP4496652B2 (en) Surface acoustic wave device and manufacturing method thereof
JP4012753B2 (en) Surface acoustic wave device
JP4195605B2 (en) Surface acoustic wave device
JP2007104458A (en) Thin-film piezo-resonator device and its manufacturing method
JP2007027211A (en) Electronic component and its manufacturing method
JP2002343827A (en) Electronic component and method of manufacturing it
JP2004129193A (en) Elastic surface wave apparatus
JPH11214955A (en) Surface-acoustic-wave device
JP4384443B2 (en) Electronic component equipment
JP2003264442A (en) Manufacturing method of surface acoustic wave device and multi-chamfer base board
JP5277883B2 (en) Elastic wave filter device
JP4731216B2 (en) Surface acoustic wave device