JP2008211806A - Semiconductor device, method of manufacturing same, electronic component, circuit board, and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be made small-sized, thin and highly functional, a method of manufacturing the same, an electronic component, a circuit board, and an electronic device. <P>SOLUTION: A semiconductor device includes: a semiconductor substrate 10; an external connecting terminal 37 provided to the first surface 10a of the semiconductor substrate 10; a first electrode 22 provided to the first surface 10a of the semiconductor substrate 10 and electrically connected with the external connecting terminal 37; a second electrode 23 electrically connected with an electronic element provided to a second surface 10b facing the first surface 10a of the semiconductor substrate 10; a groove 11 provided to the second surface 10b of the semiconductor substrate 10 and reaching the second electrode 23; and a conductive unit 12 provided inside the groove 11 and electrically connected with the rear side 23a of the second electrode 23. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device, a semiconductor device manufacturing method, an electronic component, a circuit board, and an electronic apparatus.

2. Description of the Related Art In recent years, electronic devices including surface acoustic wave elements (hereinafter referred to as “SAW (Surface Acoustic Wave) elements” as appropriate) have been used in electronic devices such as cellular phones and television receivers. Has been. Patent Documents 1 and 2 below disclose examples of technologies related to electronic components including SAW elements. Patent Document 1 discloses a technique related to an electronic component package in which a SAW element and an integrated circuit that drives and controls the SAW element are arranged in the same space. Patent Document 2 discloses a technique related to a package of an electronic component in which a SAW element is mounted on a first substrate and an integrated circuit is mounted on a second substrate.
JP 2002-290184 A JP 2002-290200 A

  By the way, along with the demand for downsizing of electronic devices on which electronic parts equipped with SAW elements are mounted, downsizing of semiconductor devices on which electronic elements such as SAW elements are mounted and electronic parts themselves on which electronic elements are mounted are also downsized. It is requested. However, in the configuration of Patent Document 1 described above, since the SAW element and the integrated circuit are arranged in parallel, it is difficult to reduce the size. Similarly, in the configuration of Patent Document 2, since the first substrate on which the SAW element is mounted and the second substrate on which the integrated circuit is mounted are arranged so as to overlap each other, it is difficult to reduce the thickness (downsize).

  Further, not only electronic components including SAW elements but also electronic components including electronic elements that require hermetic sealing such as crystal resonators, piezoelectric resonators, and piezoelectric tuning forks are required to be downsized.

  The present invention has been made to solve the above-described problem, and is capable of realizing miniaturization, thinning, and high functionality, a semiconductor device manufacturing method, an electronic component, a circuit board, and a semiconductor device. An object is to provide electronic equipment.

In order to achieve the above object, the present invention provides the following means.
The semiconductor device of the present invention is provided on the first surface of the semiconductor substrate, the external connection terminal provided on the first surface of the semiconductor substrate, and electrically connected to the external connection terminal. A first electrode, a second electrode electrically connected to an electronic element provided on a second surface opposite to the first surface of the semiconductor substrate, and a second surface of the semiconductor substrate. In addition, a groove reaching the second electrode and a conductive portion provided inside the groove and electrically connected to the back surface of the second electrode are provided.

  In the semiconductor device according to the present invention, by forming the conductive portion inside the groove reaching the second electrode, the second electrode can be electrically connected to the electronic element through the conductive portion. Since one electrode is electrically connected to an external connection terminal, it is possible to achieve downsizing, thinning, and high functionality of the entire semiconductor device that can be connected to an external device (for example, a circuit board). .

  The semiconductor device of the present invention is provided on the first surface of the semiconductor substrate, and electrically connects the first electrode and the external connection terminal; the semiconductor substrate and the external connection terminal; It is preferable to provide the stress relaxation layer provided between these.

  In the semiconductor device according to the present invention, since the rearrangement wiring is formed in the semiconductor device by electrically connecting the first electrode and the external connection terminal via the wiring, the shape and arrangement of the external connection terminal are free. The degree spreads. Further, by providing the stress relaxation layer, the connection reliability between the external device and the semiconductor device becomes high.

In the semiconductor device of the present invention, it is preferable that a metal film of the same material as the wiring is provided on the surface of the second electrode.
In the semiconductor device according to the present invention, a material having high corrosion resistance is generally used as a wiring material. Therefore, by providing a metal film of the same material as the wiring on the surface of the second electrode, it is possible to prevent corrosion of the surface of the second electrode, and thus it is possible to prevent the occurrence of electrical defects. .

Moreover, it is preferable that the semiconductor device of this invention is provided with the other surface electrode electrically connected with the said electroconductive part in the 2nd surface of the said semiconductor substrate.
In the semiconductor device according to the present invention, by providing the other surface electrode electrically connected to the conductive portion, for example, by forming the other surface electrode according to the electrode shape of the electronic element, the connection form with the electronic element The degree of freedom in designing (mounting form) can be improved.

  According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the step of forming a first electrode on a first surface of a semiconductor substrate, the step of forming a second electrode on the first surface of the semiconductor substrate, and the semiconductor substrate. Forming a wiring for electrically connecting the first electrode and the external connection terminal thereon; forming a stress relaxation layer between the semiconductor substrate and the external connection terminal; and A step of forming a groove in the semiconductor substrate from the second surface facing the first surface toward the second electrode, a step of forming an insulating film on a side wall of the groove, and the electronic element in the groove Forming a conductive portion electrically connecting the second electrode.

  In the method for manufacturing a semiconductor device according to the present invention, since the groove is formed from the second surface of the semiconductor substrate on which the second electrode is not formed, it is easy to form a conductive portion that is electrically connected to the second electrode. In addition, after forming the insulating film on the side wall of the groove, a conductive portion electrically connected to the second electrode is formed in the groove, so that the conductive portion and the semiconductor substrate are in a well-insulated state. The voltage can be accurately supplied from the second electrode to the electronic element through the conductive portion, and the electronic element can be driven satisfactorily.

In the method for manufacturing a semiconductor device of the present invention, it is preferable that the step of forming the groove uses a photolithography method and an etching method.
In the method for manufacturing a semiconductor device according to the present invention, since the groove is formed in the silicon substrate by photolithography and etching, it can be formed with high accuracy.

In the method for manufacturing a semiconductor device of the present invention, it is preferable that the other surface electrode provided on the second surface of the semiconductor device and the conductive portion are integrally formed.
In the method for manufacturing a semiconductor device according to the present invention, it is possible to manufacture the semiconductor device efficiently by integrally forming the other surface electrode and the conductive portion, and to realize cost reduction of the semiconductor device. Become.

In the method of manufacturing a semiconductor device according to the present invention, it is preferable that a plurality of the semiconductor devices are simultaneously formed on the same substrate, and then the substrate is cut for each of the semiconductor devices.
In the method for manufacturing a semiconductor device according to the present invention, a semiconductor device can be efficiently manufactured by simultaneously forming a plurality of semiconductor devices on a substrate and then cutting the substrate for each semiconductor device. Cost reduction.

  The electronic component of the present invention is provided on the first surface of the semiconductor substrate, the external connection terminal provided on the first surface of the semiconductor substrate, and electrically connected to the external connection terminal. A first electrode, a second electrode electrically connected to an electronic element provided on a second surface opposite to the first surface of the semiconductor substrate, and a second surface of the semiconductor substrate. And a groove extending to the second electrode, provided in the groove, a conductive portion electrically connected to the back surface of the second electrode, and provided on the second surface of the semiconductor substrate, An electronic element electrically connected to the conductive portion and a sealing member that seals the electronic element are provided.

  In the electronic component according to the present invention, an electronic element is provided on the second surface of the semiconductor substrate, and the electronic element is electrically connected to the conductive portion, whereby the second electrode is electrically connected to the electronic element through the conductive portion. Can be connected to each other. In addition, since the first electrode is electrically connected to the external connection terminal, it is possible to reduce the size and thickness of the entire electronic component that can be connected to an external device or the like. Furthermore, since the electronic element is sealed by the sealing member, it is possible to drive the electronic element satisfactorily while realizing a reduction in size and thickness of the entire electronic component.

  In the electronic component according to the aspect of the invention, it is preferable that the sealing member is disposed apart from the second surface of the semiconductor substrate, and the electronic element is provided on the sealing member side.

  In the electronic component according to the present invention, since the electronic element is provided on the sealing member side, the electronic element can be sealed by electrically connecting the electronic element and the conductive portion. Therefore, a sealed electronic component can be obtained with a simple configuration.

  In the electronic component of the present invention, a support substrate is provided between the second surface of the semiconductor substrate and the sealing member that is disposed apart from the second surface of the semiconductor substrate, and the electronic element Is preferably provided on the support substrate.

  In the electronic component according to the present invention, since the electronic element is provided on the support substrate, the electronic element and the conductive portion can be electrically connected in a state where the electronic element is favorably supported. Therefore, the electronic element can be driven satisfactorily.

  In the electronic component of the present invention, the electronic element is held on a support substrate that is spaced apart from the second surface of the semiconductor substrate, and the sealing member is held on the support substrate. It is preferable to provide an electronic device electrode electrically connected to the electronic device.

  In the electronic component according to the present invention, since the electronic element held on the support substrate is sealed by the sealing member, the electronic element electrode provided on the sealing member is electrically connected to the conductive portion. Thus, it is possible to drive the electronic element satisfactorily while realizing miniaturization and thinning.

It is preferable that the second surface of the semiconductor substrate includes an other surface electrode in which the conductive portion and the electronic element are electrically connected.
In the electronic component according to the present invention, by providing the other surface electrode in which the conductive portion and the electronic element are electrically connected, for example, by forming the other surface electrode according to the electrode shape of the electronic element, the electronic device It is possible to improve the conduction state between the first electrode and the second electrode.

The circuit board of the present invention is characterized in that the electronic component described above is mounted.
With the circuit board according to the present invention, it is possible to provide a circuit board (printed wiring board or the like) on which electronic components that have been reduced in size and thickness are mounted. Therefore, even when this circuit board is mounted on an electronic device or the like, it is possible to prevent the entire electronic device from becoming large.

An electronic apparatus according to the present invention is characterized in that the electronic component described above is mounted.
The electronic device according to the present invention can provide an electronic device on which an electronic component that has been reduced in size and thickness is mounted. Therefore, a miniaturized electronic device can be obtained.

[One Embodiment of Semiconductor Device]
Next, an embodiment of the semiconductor device of the present invention will be described with reference to FIGS.
As shown in FIG. 1, the semiconductor device 1 according to the present embodiment is formed on a silicon substrate (semiconductor substrate) 10 and a first surface 10a of the silicon substrate 10, and is a printed wiring board (circuit board) that is an external device. And a connecting portion 20 electrically connected to P.

As shown in FIG. 1, the silicon substrate 10 has a groove 11 extending from the first surface 10 a to the second surface 10 b facing the second electrode 23, and a conductive material is formed inside the groove 11. Is provided. An insulating film 13 is provided on the side wall of the groove 11 so that the conductive portion 12 and the silicon substrate 10 are electrically insulated.
Further, a back insulating layer 14 is formed on the surface of the second surface 10b of the silicon substrate 10 in a region other than the region where the groove 11 is formed. On the back insulating layer 14, as an electronic element, for example, a back electrode (other surface electrode) 15 corresponding to an electrode of a surface acoustic wave element “SAW (Surface Acoustic Wave) element” is formed as shown in FIG. Has been.

The connection unit 20 includes a base layer 21 provided on the first surface 10a of the silicon substrate 10, a first electrode 22 and a second electrode 23 provided in each of a plurality of predetermined regions of the base layer 21, and these A first insulating layer 24 provided in a region other than the region where the electrodes 22 and 23 are provided, and a wiring portion 30 formed on the first insulating layer 24 are provided. The underlayer 21 is made of an insulating material such as silicon oxide (SiO 2) or silicon nitride (Si 3 N 4). Examples of the material of the first and second electrodes 22 and 23 include titanium (Ti), titanium nitride (TiN), aluminum (Al), copper (Cu), and alloys containing these.
Although a plurality of electrodes may be formed on the silicon substrate 10 as shown in FIG. 2, in the present embodiment, only the first electrode 22 and the second electrode 23 will be described.
The second electrode 23 may be covered with the first insulating layer 24.
Although not shown, an integrated circuit including, for example, a transistor and a memory element is formed under the base layer 21. The integrated circuit is electrically connected to the first electrode 22 and the second electrode 23.

  As shown in FIGS. 1 and 2, the wiring unit 30 includes a first wiring (wiring) 31 electrically connected to the first electrode 22 provided on the first insulating layer 24, and a second electrode 23. It is formed on the metal film 32 provided on the surface, the first wiring (wiring) 31, the second insulating layer (stress relaxation layer) 33 provided on the metal film 32, and the second insulating layer 33. The second wiring (wiring) 34 electrically connected to the first wiring 31 and the third insulating layer 35 formed on the second wiring 34 are provided. Further, a part of the first wiring 31 is exposed from the second insulating layer 33 to form a land portion 36, and the land portion 36 and the second wiring 34 are electrically connected. Further, bumps (external connection terminals) 37 are provided on the second wiring 34, and the semiconductor device 1 is electrically connected to the printed wiring board P via the bumps 37. The third insulating layer 35 is provided so as to cover a region other than the region where the bumps 37 are formed on the second insulating layer 33 and the second wiring 34.

  The first electrode 22 is electrically connected to the bumps 37 via the first wiring 31 and the second wiring 34. Further, the second electrode 23 is formed on the base layer 21 provided on the first surface 10 a of the silicon substrate 10, and a part thereof is exposed by the groove 11. Thereby, the second electrode 23 is electrically connected to the one end portion 12 a of the conductive portion 12 inside the groove 11 on the back surface 23 a of the second electrode 23. Further, the other end portion 12 b of the conductive portion 12 is electrically connected to the back surface electrode 15 provided on the second surface 10 b of the silicon substrate 10. That is, the second electrode 23 is electrically connected to an electronic element provided on the second surface 10 b of the silicon substrate 10.

The materials of the first and second wirings 31 and 34 are gold (Au), copper (Cu), silver (Ag), titanium (Ti), tungsten (W), titanium tungsten (TiW), titanium nitride ( TiN), nickel (Ni), nickel vanadium (NiV), chromium (Cr), aluminum (Al), palladium (Pd), and the like. As these 1st, 2nd wiring 31 and 34, the single layer structure of the material mentioned above may be sufficient, and you may make a laminated structure combining two or more.
The first, second, and third insulating layers 24, 33, and 35 are made of resin (synthetic resin). Examples of the material for forming the first, second, and third insulating layers 24, 33, and 35 include polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, acrylic resin, phenol resin, BCB ( Any insulating material such as benzocyclobutene and PBO (polybenzoxazole) may be used.
The first insulating layer 24 may be formed of an insulating material such as silicon oxide (SiO 2) or silicon nitride (Si 3 N 4).

  The material of the metal film 32 is preferably the same material as the first and second wirings 31 and 34. As a material of the metal film 32, metals such as Au, TiW, Cu, Cr, Ni, Ti, W, NiV, and Al can be used. The metal film 32 can also be formed by stacking these metals. The metal film (at least one layer in the case of a laminated structure) 32 is preferably formed using a material having higher corrosion resistance than the electrode, for example, Au, TiW, or Cr. This is because it is possible to prevent the corrosion of the electrode and prevent the occurrence of electrical failure.

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing the semiconductor device 1 will be described with reference to FIGS. Here, in this embodiment, a plurality of semiconductor devices 1 (see FIG. 6) are simultaneously formed on the same silicon substrate (substrate) 100, but for simplicity, one semiconductor device 1 is shown in FIGS. The case where the semiconductor device 1 is formed is shown.

  First, as shown in FIG. 4A, after forming a base layer 21 on the first surface 10 a of the silicon substrate 10, first and second electrodes 22 and 23 are formed on the base layer 21. Then, the first insulating layer 24 is formed on the first and second electrodes 22 and 23, and the insulating material covering the first and second electrodes 22 and 23 is removed by a known photolithography method and etching method. Note that the insulating material covering the second electrode 23 is not necessarily removed. Next, the first wiring 31 is formed on the first insulating layer 24 including the first electrode 22, and the metal film 32 is formed on the surface of the second electrode 23. The first wiring 31 is formed, for example, by forming TiW and Cu in this order by sputtering, and then forming Cu by plating.

  Next, a second insulating layer 33 is formed so as to cover the first wiring 31 and the metal film 32, and a region corresponding to the land portion 36 of the second insulating layer 33 is removed by a well-known photolithography method. A part of the wiring 31 is exposed to form a land portion 36. Then, the second wiring 34 is formed on the second insulating layer 33 so as to be connected to the land portion 36, and then the region other than the region where the bumps 37 on the second insulating layer 33 and the second wiring 34 are formed. By providing the third insulating layer 35 so as to cover the region, a form as shown in FIG.

Next, as shown in FIG. 4B, the silicon substrate 10 and the underlying layer 21 corresponding to the second electrode 23 are formed by dry etching using the photoresist 40 as a mask on the second surface 10b of the silicon substrate 10. Remove. Thus, as shown in FIG. 4C, etching is performed from the second surface 10b of the silicon substrate 10 until the back surface 23a of the second electrode 23 provided on the first surface 10a is exposed. Form.
Although the photoresist 40 is used as a mask, the present invention is not limited to this. For example, a SiO 2 film may be used as a hard mask, or a photoresist mask and a hard mask may be used in combination. Further, the etching method is not limited to dry etching, and wet etching, laser processing, or a combination thereof may be used.

  Next, as shown in FIG. 5A, the back surface insulating layer 14 and the insulating film 13 are formed on the second surface 10 b of the silicon substrate 10 and the inner wall of the groove 11. The back insulating layer 14 and the insulating film 13 are provided to prevent the occurrence of current leakage, the erosion of the semiconductor substrate 10 due to oxygen, moisture, etc., and are formed by using PECVD (Plasma Enhanced Chemical Vapor Deposition). Ethyl (Tetra Ethyl Ortho Silicate: Si (OC2H5) 4: hereinafter referred to as TEOS), that is, PE-TEOS, and TEOS formed using ozone CVD, that is, silicon oxide formed using O3-TEOS or CVD (SiO2) ) Can be used. The back insulating layer 14 and the insulating film 13 may be other materials or resin as long as they have insulating properties. Then, by removing the insulating film 13 provided on the back surface 23a of the second electrode 23 by dry etching or laser processing, the insulating layer 13 is provided only on the side wall of the groove 11 as shown in FIG. It becomes the form that was made.

Next, using the electrochemical plating (ECP) method, the inside of the groove 11 is plated, and a conductive material for forming the conductive portion 12 is disposed inside the groove 11. One end portion 12 a of the second electrode 23 and the exposed second electrode 23 are electrically connected to each other at the back surface 23 a of the second electrode 23. As a conductive material for forming the conductive portion 12, for example, copper (Cu) can be used, and copper (Cu) is embedded in the conductive portion 12. The step of forming the conductive portion 12 in the present embodiment includes, for example, a step of forming (stacking) TiN and Cu by a sputtering method and a step of forming Cu by a plating method. In addition, the process of forming (stacking) TiW and Cu by a sputtering method and the process of forming Cu by a plating method may be included. The method for forming the conductive portion 12 is not limited to the above-described method, and a conductive paste, molten metal, metal wire, or the like may be embedded.
Further, in the present embodiment, the inside of the groove 11 is embedded with the conductive portion 12, but the conductive portion 12 is provided on the inner wall of the groove 11 even if it is not completely embedded, and is electrically connected to the back surface 23 a of the second electrode 23. It may be in the form of being connected to.

  After the conductive portion 12 is formed, a back electrode 15 is formed on the second surface 10b of the silicon substrate 10 so as to be electrically connected to the conductive portion 12, thereby forming a configuration as shown in FIG. It becomes. The back electrode 15 may be formed simultaneously with the conductive portion 12, that is, integrally. Next, bumps 37 made of, for example, lead-free solder are mounted on the second wiring 34 provided on the first surface 10a side of the silicon substrate 10. When the bumps 37 are provided, the solder ball may be mounted on the second wiring 34 or the solder paste may be printed on the second wiring 34.

  Then, as shown in FIG. 6, the silicon substrate 100 is diced (cut) for each semiconductor device 1 by the dicing device 110. Thus, the semiconductor device 1 shown in FIG. 1 can be obtained by forming a plurality of semiconductor devices 1 on the silicon substrate 100 substantially simultaneously and then cutting the silicon substrate 100 for each semiconductor device 1. In this way, the semiconductor device 1 can be efficiently manufactured, and the cost of the semiconductor device 1 can be reduced.

  According to the semiconductor device 1 according to the present embodiment, the second electrode 23 is electrically connected to the electronic element via the conductive portion 12 by forming the conductive portion 12 inside the groove 11 reaching the second electrode 23. In addition, since the first electrode 22 is electrically connected to the bump 37, the entire semiconductor device 1 that can be connected to an external device or the like can be reduced in size, thickness, and functionality. It becomes possible.

[First Embodiment of Electronic Component]
Next, a first embodiment of an electronic component 50 in which a SAW element (electronic element) 60 is mounted as an electronic element on the semiconductor device 1 described above will be described with reference to FIG. Note that, in each embodiment described below, portions having the same configuration as those of the semiconductor device 1 according to the embodiment described above are denoted by the same reference numerals and description thereof is omitted.
The semiconductor device 51 used for the electronic component 50 of the present embodiment has the same configuration as the semiconductor device 1 described above except that the back electrode 15 is not provided.

  As shown in FIG. 8, the electronic component 50 includes a piezoelectric thin film (not shown) and a comb electrode 61 in contact with the piezoelectric thin film. Then, as shown in FIG. 7, the electronic component 50 is directly formed with the electronic element 60 on the second surface 10 b side of the silicon substrate 10 so as to be electrically connected to the other end portion 12 b of the conductive portion 12. Has been. Although not shown, an integrated circuit having, for example, a transistor and a memory element is formed on the first surface 10a side of the silicon substrate 10. One end portion 12 a of the conductive portion 12 is electrically connected to the integrated circuit via the second electrode 23. Therefore, the electronic element 60 provided on the second surface 10 b of the silicon substrate 10 and the integrated circuit provided on the first surface 10 a side of the silicon substrate 10 are electrically connected via the conductive portion 12. Yes.

  In addition, the electronic component 50 includes a sealing member 52 that seals the SAW element 60 between the second surface 10 b of the silicon substrate 10. In the present embodiment, the sealing member 52 is formed of a glass substrate, but may be a silicon substrate. The sealing member 52 is provided at a position separated from the second surface 10 b of the silicon substrate 10. The peripheral edge portion of the second surface 10 b of the silicon substrate 10 and the peripheral edge portion of the inner surface 52 a of the sealing member 52 are bonded by an adhesive layer 53. The adhesive layer 53 is formed of a synthetic resin such as a polyimide resin. The internal space 55 surrounded by the second surface 10 b of the silicon substrate 10, the inner surface 52 a of the sealing member 52, and the adhesive layer 53 is substantially sealed (air-tightly sealed). In this configuration, the SAW element 60 is disposed.

[Method of manufacturing electronic parts]
Next, a method for manufacturing the electronic component 50 will be described.
First, the conductive portion 12 is formed by the same process as the method for manufacturing the semiconductor device 1 described above, and then the SAW element 60 is formed on the second surface 10 b of the silicon substrate 10. In the step of forming the SAW element 60, a step of forming a piezoelectric thin film, a step of forming a comb electrode 61 as shown in FIG. 8 so as to be in contact with the piezoelectric thin film, and a protective film (not shown) are formed. And a process of performing. Further, the step of forming the SAW element 60 includes a step of adjusting the frequency by irradiating the SAW element 60 with plasma or the like. Examples of the material for forming the piezoelectric thin film include zinc oxide (ZnO), aluminum nitride (AlN), lithium niobate (LiNbO3), lithium tantalate (LiTaO3), and potassium niobate (KNbO3). Examples of the material for forming the comb-tooth electrode 61 include metals containing aluminum. Examples of the material for forming the protective film include silicon oxide (SiO2), silicon nitride (Si3N4), and titanium nitride (TiN). The formed SAW element 60 is electrically connected to the other end portion 12 b of the conductive portion 12 on the second surface 10 b of the silicon substrate 10.

  Next, an adhesive for forming the adhesive layer 53 is provided on at least one of the second surface 10 b of the silicon substrate 10 and the inner surface 52 a of the sealing member 52. As the adhesive layer 53, for example, a photosensitive polyimide adhesive or the like can be used. Then, through the adhesive layer 53, the silicon substrate 10 and the sealing member 52 are bonded so that the second surface 10b of the silicon substrate 10 and the inner surface 52a of the sealing member 52 face each other. Thereby, a form as shown in FIG. 7 is obtained.

  Here, the sealing may be vacuum sealing for making the internal space 55 vacuum, gas replacement sealing for replacing the internal space 55 with a predetermined gas such as N 2, Ar, or He. When bonding the silicon substrate 10 and the sealing member 52, metal protrusions are provided along the peripheral edge of the second surface 10 b of the silicon substrate 10, and the metal protrusions are bonded to the inner surface 52 a of the sealing member 52. A metal layer may be provided, and the silicon substrate 10 and the sealing member 52 may be bonded to each other through the metal protrusion and the metal layer. When glass is used for the sealing member 52, the frequency of the SAW element 60 can be adjusted with a laser or the like after sealing. Thereafter, bumps 37 made of, for example, lead-free solder are mounted on the second wiring 34 provided on the first surface 10a side of the silicon substrate 10. When the bumps 37 are provided, the solder ball may be mounted on the second wiring 34 or the solder paste may be printed on the second wiring 34.

  Thereafter, similarly to the semiconductor device 1, the electronic component 50 also simultaneously forms the semiconductor device 50, the SAW element 60, the sealing member 52, and the like on the same silicon substrate (substrate). Therefore, the electronic component 50 is diced (cut) for each electronic component 50 by the dicing device 110 in the same manner as the semiconductor device 1. Thereby, the electronic component 50 can be manufactured at low cost. The manufactured electronic component 50 is mounted on the printed wiring board P or the like via the bumps 37.

  According to the electronic component 50 according to the present embodiment, the SAW element 60 is provided on the second surface 10b side of the silicon substrate 10, and the other end 12b of the conductive portion 12 and the SAW element 60 are connected. By providing an integrated circuit for driving and controlling the SAW element 60 on the first surface 10 a side of the 10, the SAW element 60 and the integrated circuit can be electrically connected via the conductive portion 12. Therefore, the SAW element 60 can be driven satisfactorily while realizing a reduction in size and thickness of the electronic component 50 as a whole. Since the SAW element 60 is sealed between the second surface 10b by the sealing member 52, the SAW element 60 can be well sealed while realizing a reduction in size and thickness. The element 60 can be driven satisfactorily.

[Second Embodiment of Electronic Component]
Next, a second embodiment of the electronic component 70 in which the SAW element 71 is mounted as an electronic element on the semiconductor device 1 described above will be described with reference to FIG. In each embodiment described below, portions having the same configuration as those of the electronic component 50 according to the first embodiment described above are denoted by the same reference numerals and description thereof is omitted.
In the electronic component 70 according to the present embodiment, the SAW element 71 is not formed on the second surface 10b of the silicon substrate 10 and is sealed at a position separated from the second surface 10b of the silicon substrate 10. It differs from 1st Embodiment by the point provided in the stop member 52. FIG.

The SAW element 71 is provided on the inner surface 52 a of the sealing member 52 that faces the second surface 10 b of the silicon substrate 10. Further, the SAW element 71 is provided with a terminal 72 on the surface facing the second surface 10 b of the silicon substrate 10.
In the semiconductor device 73, a back electrode (other surface electrode) 54 is formed on the groove 11 of the second surface 10 b of the silicon substrate 10. And this back electrode 54 and the other end part 12b of the electroconductive part 12 are electrically connected. The back electrode 54 is formed at a position corresponding to the terminal 72 of the SAW element 71. That is, the second electrode 23 is electrically connected to the SAW element 71 provided on the second surface 10 b of the silicon substrate 10 via the conductive portion 12 and the back electrode 54.
Moreover, the sealing member 52 is comprised by the board | substrate which has a silicon substrate, a quartz substrate, silicon | silicone, and a diamond.

  As a manufacturing method of the electronic component 70, the SAW element 71 is formed in advance on the inner surface 52a of the sealing member 52, and then the rear surface electrode 54 formed on the second surface 10b of the silicon substrate 10 and the sealing member are formed. 9 by bonding the silicon substrate 10 and the sealing member 52 via the adhesive layer 53 so that the terminal 72 of the SAW element 71 formed on the inner surface 52a of the 52 is electrically connected. The electronic component 70 shown is obtained. The back electrode 54 and the terminal 51 may be pressed by contraction of the adhesive layer 30.

  According to the electronic component 70 according to the present embodiment, by providing the SAW element 71 on a member different from the silicon substrate 10, that is, the sealing member 52, the electronic component 70 is affected by thermal stress and film stress applied to the silicon substrate 10. Since it is difficult, good characteristics can be obtained.

[Third Embodiment of Electronic Component]
Next, a third embodiment of an electronic component 80 in which a SAW element 81 as an electronic element is mounted on the semiconductor device 1 described above will be described with reference to FIG.
In the electronic component 80 according to the present embodiment, the SAW element 81 is not formed on the second surface 10 b of the silicon substrate 10, and the SAW element 81 is provided on the support substrate 82. Different from form.

  The support substrate 82 is provided between the second surface 10 b of the silicon substrate 10 and the sealing member 52 disposed at a position separated from the second surface 10 b of the silicon substrate 10. The SAW element 81 is provided on the surface 82 a side of the support substrate 82 that faces the second surface 10 b of the silicon substrate 10. Further, the SAW element 81 is provided with a terminal 83 on a surface facing the second surface 10 b of the silicon substrate 10 as in the second embodiment of the electronic component 70. The terminal 83 and the back electrode 54 are electrically connected.

  According to the electronic component 80 according to the present embodiment, by providing the SAW element 81 on a member different from the silicon substrate 10, that is, the support substrate 82, the electronic component 80 is hardly affected by thermal stress and film stress applied to the silicon substrate 10. Therefore, good characteristics can be obtained. Further, the SAW element 81 and the conductive portion 12 can be electrically connected while the SAW element 81 is favorably supported by the support substrate 82.

[Fourth Embodiment of Electronic Component]
Next, a fourth embodiment of an electronic component 90 in which an AT vibrator (quartz crystal vibrator) 91 is mounted as an electronic element on the semiconductor device 1 described above will be described with reference to FIG.
The electronic component 90 according to the present embodiment is different from the second embodiment in that the AT vibrator 91 is sealed by the sealing member 93 while being held by the support substrate 92.

  The support substrate 92 is disposed apart from the second surface 10b of the silicon substrate 10, and the AT vibrator 91 is provided on the inner surface 92a of the support substrate 92 that faces the second surface 10b of the silicon substrate 10. ing. The AT vibrator 91 is sealed with a sealing member 93 made of a glass substrate provided between the support substrate 92 and the second surface 10 b of the silicon substrate 10. The internal space 95 surrounded by the inner surface 92a of the support substrate 92 and the inner surface 93a of the sealing member 93 is substantially sealed (air-tightly sealed).

The sealing member 93 is provided with an electronic element electrode 94 on the surface facing the second surface 10 b of the silicon substrate 10. The electronic element electrode 94 and the back electrode 54 are electrically connected. That is, the second electrode 23 is electrically connected to the AT vibrator 91 via the conductive portion 12 and the back electrode 54 provided on the second surface 10 b of the silicon substrate 10.
Further, the peripheral portion of the second surface 10 b of the silicon substrate 10, the peripheral portion of the support substrate 92, and the second surface 10 b and the sealing member 93 are sealed with a sealing resin 96.

  According to the electronic component 90 according to the present embodiment, since the AT vibrator held on the support substrate 92 is sealed by the sealing member 93, the electronic element electrode 94 and the conductive portion provided on the sealing member 93 are sealed. Thus, the electronic device can be driven satisfactorily while realizing a reduction in size and thickness.

<Electronic equipment>
FIG. 12 is a diagram illustrating an example of an electronic device on which the above-described electronic components 50, 70, 80, and 90 are mounted, and is a diagram illustrating a mobile phone 300. Since the electronic component of the present invention that has been reduced in size, thickness, and functionality is mounted, a small mobile phone 300 is realized.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, although the back surface electrode 15 is provided in the embodiment of the semiconductor device 1, the electrode of the electronic component may be directly connected to the other end portion 12 b of the conductive portion 12.
Further, the surface of the back electrodes 15 and 54 connected to the electronic elements 60, 71, 81 and 91 or the surface of the other end portion 12 b of the conductive portion 12 is subjected to surface treatment such as gold or soldering so as to facilitate metal connection. It is preferable to provide a material (SnAg plating or the like). Also in each of the embodiments described above, in addition to the form of dicing in the final process, it may be separated into pieces in an appropriate process (intermediate process).

Furthermore, when the sealing members 52 and 93 are formed of a glass substrate, when the sealing members 52 and 93 made of the glass substrate are diced (cut), the dicing is performed by the dicing apparatus 110 described with reference to FIG. Alternatively, dicing can be performed by irradiating a laser, or dicing can be performed using a dry etching method or a wet etching method.
Further, the electronic device according to the present invention has been described using the SAW device in the first, second, and third embodiments. However, the present invention is not limited to this, and an element that requires sealing, such as a crystal resonator, A piezoelectric vibrator, a piezoelectric tuning fork, or the like may be used. In the fourth embodiment, the AT vibrator (quartz crystal vibrator) has been described. However, the present invention is not limited to this, and an element that requires sealing, such as a SAW element, a piezoelectric vibrator, a piezoelectric tuning fork, or the like. May be.

  If necessary, the silicon substrate 10 can be thinned after the connection portion 30 is formed on the silicon substrate 10. As a method of thinning the silicon substrate 10, first, a glass plate (not shown) is attached to the first surface 10 a side of the silicon substrate 10 with an adhesive that can be peeled off by irradiation with ultraviolet light (UV light). This glass plate is a part of what is called WSS (Wafer Support System). After the silicon substrate 10 is supported on the glass plate, the glass plate is attached to the second surface 10b of the silicon substrate 10. On the other hand, a predetermined process such as a polishing process, a dry etching process, or a wet etching process is performed. Thereby, the silicon substrate 10 is thinned.

It is sectional drawing which shows the semiconductor device which concerns on one Embodiment of this invention. It is a top view in the A arrow of the semiconductor device of FIG. It is a top view in the B arrow of the semiconductor device of FIG. It is sectional drawing which shows the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows the electronic component which concerns on 1st Embodiment of this invention. It is a top view which shows the electrode of the electronic component of FIG. It is sectional drawing which shows the electronic component which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows the electronic component which concerns on 3rd Embodiment of this invention. It is sectional drawing which shows the electronic component which concerns on 4th Embodiment of this invention. It is a figure which shows the electronic device by which the electronic component of this invention was mounted.

Explanation of symbols

  P ... printed wiring board (circuit board), 1, 51, 73 ... semiconductor device, 10 ... silicon substrate (semiconductor substrate), 10a ... first surface of the silicon substrate, 10b ... second surface of the silicon substrate, 11 ... Groove, 12 ... conductive portion, 15, 54 ... back electrode (other surface electrode), 22 ... first electrode, 23 ... second electrode, 23a ... back surface of second electrode, 31 ... first wiring layer (wiring layer), 33 ... second insulating layer (stress relaxation layer), 34 ... second wiring layer (wiring layer), 37 ... bump (external connection terminal), 50, 70, 80, 90 ... electronic component, 52, 93 ... sealing member , 60, 71, 81, 91 ... SAW element (electronic element), 92 ... support substrate, 94 ... electronic element electrode, 100 ... silicon substrate (substrate), 300 ... electronic equipment

Claims (15)

A semiconductor substrate;
A first electrode provided on a first surface of the semiconductor substrate;
A second electrode provided at a position away from the first electrode on the first surface of the semiconductor substrate;
An external connection terminal provided on the first surface side of the semiconductor substrate;
A groove extending from the second surface opposite to the first surface of the semiconductor substrate to the second electrode on the first surface;
A conductive portion provided inside the groove and electrically connected to the second electrode;
The first electrode is electrically connected to the external connection terminal provided on the first surface side of the semiconductor substrate,
The semiconductor device, wherein the second electrode is electrically connected to an electronic element mounted on the second surface side of the semiconductor substrate via the conductive portion. A wiring provided on the first surface of the semiconductor substrate and electrically connecting the first electrode and the external connection terminal;
The semiconductor device according to claim 1, further comprising a stress relaxation layer provided between the semiconductor substrate and the external connection terminal.   3. The semiconductor device according to claim 2, wherein a metal film made of the same material as that of the wiring is provided on the surface of the second electrode.   4. The semiconductor device according to claim 1, further comprising a second surface electrode electrically connected to the conductive portion on the second surface of the semiconductor substrate. 5. Forming a first electrode electrically connected to an external connection terminal to be formed later on the first surface of the semiconductor substrate;
Forming a second electrode electrically connected to a conductive portion to be formed later on the first surface of the semiconductor substrate;
Forming a wiring for electrically connecting the first electrode and an external connection terminal to be formed later on the semiconductor substrate;
Forming a stress relaxation layer between the semiconductor substrate and the external connection terminal;
Forming a groove in the semiconductor substrate from the second surface opposite to the first surface of the semiconductor substrate toward the second electrode;
Forming an insulating film on the side wall of the groove;
Forming a conductive part electrically connecting the electronic element and the second electrode in the groove;
Forming an external connection terminal electrically connected to the first electrode and the wiring on the wiring;
A method for manufacturing a semiconductor device, comprising:   6. The method of manufacturing a semiconductor device according to claim 5, wherein the step of forming the groove uses a photolithography method and an etching method.   The semiconductor device manufacturing method according to claim 5, wherein in the step of forming the conductive portion, an other surface electrode is formed integrally with the conductive portion on the second surface of the semiconductor substrate. Method.   8. The method of manufacturing a semiconductor device according to claim 5, wherein a plurality of the semiconductor devices are simultaneously formed on the same substrate, and then the substrate is cut for each of the semiconductor devices. A semiconductor substrate;
A first electrode provided on a first surface of the semiconductor substrate;
A second electrode provided at a position away from the first electrode on the first surface of the semiconductor substrate;
An external connection terminal provided on the first surface side of the semiconductor substrate;
A groove extending from the second surface opposite to the first surface of the semiconductor substrate to the second electrode on the first surface;
A conductive portion provided in the groove and electrically connected to the second electrode;
An electronic element mounted on the second surface side of the semiconductor substrate and electrically connected to the conductive portion;
A sealing member for sealing the electronic element,
The first electrode is electrically connected to the external connection terminal provided on the first surface side of the semiconductor substrate,
The electronic component, wherein the second electrode is electrically connected to an electronic element mounted on the second surface side of the semiconductor substrate via the conductive portion.   The electronic component according to claim 9, wherein the sealing member is disposed apart from the second surface of the semiconductor substrate, and the electronic element is provided on the sealing member side. A support substrate is provided between the second surface of the semiconductor substrate and the sealing member disposed to be separated from the second surface of the semiconductor substrate;
The electronic component according to claim 9, wherein the electronic element is provided on the support substrate. The electronic element is held on a support substrate disposed away from the second surface of the semiconductor substrate;
The electronic component according to claim 9, wherein the sealing member seals the electronic element held on the support substrate and includes an electronic element electrode electrically connected to the electronic element.   The other surface electrode which electrically connected the said electroconductive part and the said electronic element is provided in the 2nd surface of the said semiconductor substrate, The any one of Claims 9-12 characterized by the above-mentioned. Electronic components.   14. A circuit board on which the electronic component according to claim 9 is mounted.   An electronic device comprising the electronic component according to any one of claims 9 to 13.

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