JP2015232579A - Sensor device, motion sensor, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sensor device and a motion sensor capable of reducing stress such as external impact, and to provide an electronic apparatus using the sensor device and the motion sensor.SOLUTION: A sensor device 1 includes: first electrodes 11b, 11d, and 11f provided on an active surface 10a of a silicon substrate 10; a stress relaxation layer 15; and external connection terminals 12b, 12d, and 12f provided on the stress relaxation layer 15. On the stress relaxation layer 15, wires 36b, 36d, and 36f are formed so as to be connected to the external connection terminals 12b, 12d, and 12f. Wires 16b, 16d, and 16f provided on the active surface 10a are connected to the corresponding wires 36b, 36d, and 36f on the stress relaxation layer 15 through via-holes 30b, 30d, and 30f. The via-holes 30b, 30d, and 30f are arranged outside bonding regions between the external connection terminals 12b, 12d, and 12f and extraction electrodes 29b, 29d, and 29f as connection electrodes of a vibration gyro element 20.

Description

  The present invention relates to a sensor device, a motion sensor, and an electronic apparatus using them.

Conventionally, in a motion sensor that senses acceleration, angular velocity, and the like, a configuration using a sensor device including a sensor element and a circuit element having a function of driving the sensor element is known.
For example, Patent Literature 1 discloses a motion sensor in which a sensor device including a vibration gyro element (gyro vibrating piece) as a sensor element and a semiconductor device (hereinafter referred to as a semiconductor substrate) as a circuit element is housed in a package. A gyro sensor (piezoelectric oscillator) is disclosed.
In this configuration, the semiconductor substrate is fixed to the support substrate and electrically connected to the lead wiring portion formed on the support substrate. Further, the sensor element (vibrating gyro element) is disposed so as to maintain a gap with the semiconductor substrate in a plan view by being connected to a lead wire fixed to the support substrate.

  However, in the gyro sensor described in Patent Document 1, in order to mitigate the influence on the sensor element due to an externally applied impact or the like, the lead wire has elasticity, and the externally applied impact is absorbed by the bending. ing. For this reason, the gyro sensor needs to have a gap that exceeds the bending amount of the lead wire so that the semiconductor substrate and the sensor element do not interfere with each other even when the lead wire is bent due to an external impact. There is. As a result, the gyro sensor has a problem that the thickness of the sensor device increases and the total thickness increases.

As a configuration of a gyro sensor that solves such a problem, a stress relaxation layer is provided on a semiconductor substrate, and is electrically connected to the first electrode of the semiconductor substrate via a rearrangement wiring on the stress relaxation layer. The inventor has found that a configuration including an external connection terminal provided and connecting and holding the sensor element via the external connection terminal is effective.
More specifically, this gyro sensor includes a semiconductor substrate having a first electrode on the active surface side, a sensor element including a base, a vibration part extending from the base, and a connection electrode. Yes. The gyro sensor includes an external connection terminal that is electrically connected to the first electrode and provided on the active surface side, a stress relaxation layer provided between the semiconductor substrate and the external connection terminal, And a connection terminal provided on the active surface side. The sensor element is held on the semiconductor substrate by connection between the connection electrode and the external connection terminal.
According to this configuration, the stress applied from the outside is absorbed and relaxed by the stress relaxation layer provided between the semiconductor substrate and the external connection terminal, and the configuration of the gyro sensor described in Patent Literature 1 is also achieved. In addition, since it is possible to connect directly without using a lead wire or the like, a gap considering the amount of bending of the lead wire is not required, and the thickness can be reduced.

Japanese Patent Laying-Open No. 2005-292079 (FIG. 12)

In the gyro sensor capable of reducing stress such as externally applied impact while reducing the thickness, the electrical connection between the first electrode of the semiconductor substrate and the external connection terminal provided on the stress relaxation layer The rearrangement wiring used for connection includes an interlayer wiring, for example, a via hole for electrical connection between the semiconductor substrate side and the external connection terminal side of the stress relaxation layer.
In the gyro sensor having the above configuration, when the via hole of the rearrangement wiring is provided in the junction region between the external connection terminal and the connection electrode, the stress is relieved by a conductive member such as a metal embedded in the via hole. The stress relaxation effect by the layer is not sufficiently exhibited. In other words, when a via hole exists immediately below the support portion of the sensor element, the elastic mode of the stress relaxation layer immediately below the support portion is restricted and the stress relaxation effect is reduced, so that the vibration mode and frequency temperature characteristics are not good. The inventor has found that there are problems that the frequency becomes stable due to stability and the impact resistance against an impact applied to the sensor element from the outside is lowered.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A sensor device according to this application example includes a semiconductor substrate, a first electrode provided on the active surface side of the semiconductor substrate, and a first electrode electrically connected to the first electrode via a rearrangement wiring. An external connection terminal connected and provided on the active surface side, a stress relaxation layer provided between the semiconductor substrate and the external connection terminal, and a connection provided on the active surface side of the semiconductor substrate A sensor element including a terminal, a base, a vibration part extending from the base, and a connection electrode, and the sensor element is held on the semiconductor substrate by connection between the connection electrode and the external connection terminal The rearrangement wiring includes a via hole as an interlayer wiring of the stress relaxation layer, and the via hole is provided outside a bonding region between the external connection terminal and the connection electrode. It is characterized in that is.

In the sensor device having the above-described configuration, a connection terminal is provided on the active surface side of the semiconductor substrate, an external connection terminal electrically connected to the first electrode via the stress relaxation layer by the rearrangement wiring, and a sensor element The connection electrode is connected. In addition, since the via hole as the interlayer wiring of the stress relaxation layer is provided outside the bonding region between the external connection terminal and the connection electrode in the rearranged wiring, the stress relaxation effect of the supporting portion of the sensor element by the stress relaxation layer Is not disturbed by via holes. Such rearrangement wiring allows the sensor device to freely design the position and arrangement of the external connection terminals (arbitrary), and to provide a stress relaxation layer provided between the semiconductor substrate and the external connection terminals. As a result, an external impact or the like is absorbed and relaxed, and a stable vibration mode and frequency temperature characteristics can be obtained.
Also, the sensor device with the above configuration makes it difficult for externally applied impacts to be transmitted to the sensor element, so the external connection terminal of the semiconductor substrate and the sensor element can be directly connected without a lead wire or the like It becomes. Therefore, the sensor device does not require a gap in consideration of the amount of bending of the lead wire, and thus the thickness can be reduced as compared with the conventional configuration.

  Application Example 2 In the sensor device according to the application example, it is preferable that the external connection terminal is a protruding electrode.

According to this, since the external connection terminal is a protruding electrode in the sensor device, a gap can be provided between the sensor element and the semiconductor substrate, and contact between the sensor element and the semiconductor substrate can be avoided. It becomes possible.
As a result, the sensor device can stably drive the sensor element.

  Application Example 3 In the sensor device according to the application example described above, a part of the rearrangement wiring led out from the first electrode is meandering.

  For example, in the rearrangement wiring, the length of the wiring from the external connection terminal, that is, the junction region between the semiconductor substrate and the sensor element to the via hole can be made longer than when the wiring is extended linearly. . As a result, it is possible to suppress the elastic deformation of the stress relaxation layer when stress is applied from being transmitted to the joining region by the force regulated by the via hole, so that the stress in the joining region (support portion) can be suppressed. The stress relaxation effect by the relaxation layer can be ensured.

  Application Example 4 In the sensor device according to this application example, a passivation film is provided on the active surface of the semiconductor substrate, and most of the rearrangement wiring except the via hole is provided on the passivation film. It is characterized by that.

  According to this, the length of the rearrangement wiring can be shortened in the configuration of the rearrangement wiring of the present invention in which the via hole is arranged outside the junction region between the external connection terminal and the connection electrode.

  Application Example 5 In the sensor device according to Application Example 4, the first electrode is disposed in the vicinity of the peripheral portion of the semiconductor substrate, and the via hole is disposed above the vicinity of the center of the semiconductor substrate. It is characterized by being.

  According to this configuration, in particular, when the junction region between the external connection terminal and the connection electrode is located in the vicinity of the first electrode in plan view, the position from the junction region to the via hole can be further separated. The stress relaxation effect by the stress relaxation layer can be ensured in the support portion of the sensor element.

  Application Example 6 In the sensor device according to the application example described above, a plurality of the stress relaxation layers and the relocation wirings are stacked.

  According to this, the degree of freedom in the design of the rearrangement wiring can be further increased by providing the wiring directly above the electrode and the wiring through the stress relaxation layer.

  Application Example 7 A motion sensor according to this application example includes the sensor device according to any of the application examples described above and a package that stores the sensor device, and the sensor device is stored in the package. It is characterized by.

According to this, the motion sensor can provide a motion sensor including a sensor device that exhibits the effect described in any one of the application examples.
In addition, since the motion sensor is made thin and uses a sensor device having high impact resistance, it is possible to realize thinning and improvement in impact resistance.

  Application Example 8 A motion sensor according to this application example includes a package that houses the plurality of sensor devices, and the plurality of sensor devices has an angle formed between main surfaces of the sensor elements at a substantially right angle. It is arrange | positioned and accommodated in the said package so that it may become.

According to this, the motion sensor can provide a motion sensor including a plurality of sensor devices that achieve the effects described in any one of the application examples.
In addition, since the motion sensor is arranged and housed in the package so that the angle formed between the principal surfaces of the sensor elements is approximately a right angle, one motion sensor is capable of sensing multiple axes. Is possible.

  Application Example 9 The motion sensor according to this application example is characterized in that a main surface of at least one of the sensor elements is substantially parallel to a connected surface connected to an external member of the package.

  According to this, the number of motion sensors is one, and sensing corresponding to a plurality of axes including an axis substantially orthogonal to the connected surface of the package is possible.

  Application Example 10 An electronic apparatus according to this application example includes the sensor device according to any one of the application examples described above or a motion sensor.

  The electronic apparatus having the above configuration includes the sensor device or the motion sensor of the above application example, that is, the highly sensitive sensor device or the motion sensor in which the vibration mode and the frequency temperature characteristic are stable and the frequency variation is suppressed. Therefore, it has high performance and stable characteristics.

It is a schematic diagram which shows schematic structure of one Embodiment of a sensor device, (a) is the top view seen from the silicon substrate side (upper side) as a semiconductor substrate, (b) is from the arrow F side of (a). The side view seen, (c) is the side view seen from the arrow S side of (a). It is a schematic diagram which decomposes | disassembles and demonstrates the stress relaxation structure and rearrangement wiring of a sensor device, (a) is the top view which looked down at the silicon substrate from the upper side, (b) is the silicon substrate to which the stress relaxation structure was given The top view which looked down at from the upper side. FIG. 3 is a schematic cross-sectional view showing a state in which a vibrating gyro element is mounted in a cross section taken along line BB in FIGS. 1 and 2. The schematic plan view explaining operation | movement of the vibration gyro element as a sensor element. The schematic plan view explaining operation | movement of a vibration gyro element. It is a schematic diagram which shows the gyro sensor as a motion sensor carrying the sensor device of 1st Embodiment, (a) is a top view which looked down from upper side, (b) is the sectional view on the AA line of (a). Figure. The top view which looked down at the silicon substrate of the modification 1 of the stress relaxation structure in a sensor device from the upper side. It is a schematic diagram which shows schematic structure of the stress relaxation structure and rearrangement wiring modification 2 in a sensor device, (a) is a top view which looked down at the silicon substrate from the upper side, (b) is a stress relaxation structure. The top view which looked down at the silicon substrate from above. It is a schematic diagram which shows schematic structure of the modification 3 of the stress relaxation structure and rearrangement wiring in a sensor device, (a) is a top view which looked down at the silicon substrate from the upper side, (b) is a stress relaxation structure. The top view which looked down at the silicon substrate from above. It is a schematic diagram which shows schematic structure of the modification 4 of the stress relaxation structure and rearrangement wiring in a sensor device, (a) is typical when seeing from the upper side the vibration gyro element as a sensor element which has a support part in the center of an element. FIG. 4B is a plan view of the silicon substrate viewed from above, and FIG. 5C is a plan view of the silicon substrate on which the stress relaxation structure is applied. It is a schematic diagram which shows the example of the electronic device carrying the sensor device of the said embodiment and a modification, or a gyro sensor (motion sensor), (a) is a perspective view of a digital video camera, (b) is carrying The perspective view of a telephone, (c) is a perspective view of a personal digital assistant (PDA).

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings.

(First embodiment)
[Sensor device]
FIG. 1 is a schematic diagram illustrating a schematic configuration of an embodiment of a sensor device, where (a) is a plan view seen from a silicon substrate side (upper side) as a semiconductor substrate, and (b) is a plan view of (a). The side view seen from the arrow F side, (c) is the side view seen from the arrow S side of (a).
FIG. 2 is a schematic diagram illustrating the stress relaxation structure and relocation wiring of the sensor device in an exploded manner. FIG. 2A is a plan view of the silicon substrate viewed from above, and FIG. 2B is a stress relaxation structure. It is the top view which looked down at the silicon substrate to which was given from the upper side.
FIG. 3 is a schematic cross-sectional view showing a state in which the gyro vibrating piece is mounted on the cross section taken along the line BB in FIGS. 1 and 2.

  As shown in FIG. 1, the sensor device 1 includes a silicon substrate 10 as a semiconductor substrate and a vibrating gyro element (gyro vibrating piece) 20. The vibrating gyro element 20 is held while being electrically connected via a plurality of external connection terminals 12 a to 12 f provided on the stress relaxation layer 15 formed on the active surface 10 a side of the silicon substrate 10.

First, the vibration gyro element 20 as a sensor element in the sensor device 1 will be described in detail.
The vibration gyro element 20 is formed by using a quartz crystal, which is a piezoelectric material, as a base material (material constituting a main part). The crystal has an X axis called an electric axis, a Y axis called a mechanical axis, and a Z axis called an optical axis.
The vibrating gyro element 20 is cut out along a plane defined by the X-axis and the Y-axis orthogonal to the crystal crystal axis and processed into a flat plate shape, and has a predetermined thickness in the Z-axis direction orthogonal to the plane. ing. The predetermined thickness is appropriately set depending on the oscillation frequency (resonance frequency), the outer size, workability, and the like.

Further, the flat plate forming the vibrating gyro element 20 can tolerate errors in the angle of cut-out from the quartz crystal in a certain range for each of the X axis, the Y axis, and the Z axis. For example, it is possible to use what is cut out by rotating in the range of 0 to 2 degrees around the X axis. The same applies to the Y axis and the Z axis.
The vibrating gyro element 20 is formed by etching (wet etching or dry etching) using a photolithography technique. It should be noted that a plurality of vibrating gyro elements 20 can be taken from a single quartz wafer.

As shown in FIG. 1A, the vibrating gyro element 20 of the present embodiment has a configuration called a double T type.
The vibration gyro element 20 includes a base portion 21 located at a central portion, a pair of detection vibration arms 22a and 22b as vibration portions extending from the base portion 21 along the Y axis, and detection vibration arms 22a and 22b. A pair of connecting arms 23a, 23b extended from the base 21 along the X axis so as to be orthogonal to each other and from the distal ends of the connecting arms 23a, 23b so as to be parallel to the detection vibrating arms 22a, 22b. Each pair of drive vibrating arms 24a, 24b, 25a, 25b is provided as a vibrating portion extending along the Y axis.

  On the distal end side of each of the detection vibrating arms 22a and 22b, there are substantially rectangular weight portions 26a and 26b that are wider than the other portions (the length in the X-axis direction is large). Similarly, on the tip side of each of the two pairs of driving vibration arms 24a and 24b and the driving vibration arms 25a and 25b, substantially rectangular weight portions 27a and 27b and weight portions 28a and 28b having a larger width than the other portions. have. By these weight portions 26a, 26b, 27a, 27b, 28a, 28b, the vibration gyro element 20 can improve the detection sensitivity of the angular velocity while reducing the size.

  The vibrating gyro element 20 includes a pair of support portions 19a and 19b. Of these, one support portion 19a is disposed in the positive direction of the Y axis with respect to one detection vibrating arm 22a of the pair of detection vibrating arms 22a, 22b. The other support portion 19b is disposed on the negative direction side of the Y axis with respect to the other detection vibrating arm 22b of the pair of detection vibrating arms 22a and 22b. The lengths of the support portions 19a and 19b in the X-axis direction are larger than the lengths of the weight portions 26a and 26b of the detection vibrating arms 22a and 22b in the X-axis direction, for example, a pair of connecting arms 23a and 23b and a base portion This is about the same as the total length of 21 in the X-axis direction. In the illustrated example, the planar shape of each of the support portions 19a and 19b is substantially rectangular, but is not particularly limited. The support portions 19a and 19b are disposed apart from the detection vibrating arms 22a and 22b and the driving vibrating arms 24a, 24b, 25a, and 25b. Each support part 19a, 19b becomes a part fixed to the silicon substrate 10 via the external connection terminals 12a-12f.

As shown in FIG. 1A, a pair of beams 9a and 9c are provided between the base portion 21 and the one support portion 19a. One of the beams 9a extends from the base portion 21 through the detection vibrating arm 22a and the driving vibrating arm 24a and is connected to the support portion 19a. The other beam 9c is connected to the base portion 21 for detection. It extends between the vibrating arm 22a and the driving vibrating arm 25a and is connected to the support portion 19a.
Similarly, a pair of beams 9b and 9d are provided between the base portion 21 and the other support portion 19b. One of the beams 9c extends from the base portion 21 between the detection vibrating arm 22b and the driving vibration arm 24b and is connected to the support portion 19a, and the other beam 9d is connected to the detection portion from the base portion 21. It extends between the vibrating arm 22b and the driving vibrating arm 25b and is connected to the support portion 19b. Each beam 9a, 9b, 9c, 9d can have an S-shape as shown. As described above, the support portions 19a and 19b and the base portion 21 are connected by the beams 9a to 9d having an elongated and meandering shape, whereby the main portion of the vibration gyro element 20 is elastic in the X-axis direction and the Y-axis direction. be able to.

  The center of the base 21 can be the center of gravity as the center of gravity position of the vibrating gyro element 20. The X axis, the Y axis, and the Z axis are orthogonal to each other and pass through the center of gravity. The vibrating gyro element 20 can be point symmetric with respect to the center of gravity. That is, the vibrating gyro element 20 can be plane-symmetric with respect to the XZ plane and plane-symmetric with respect to the YZ plane.

In the vibrating gyro element 20, detection electrodes (not shown) are formed on the detection vibrating arms 22a and 22b, and drive electrodes (not shown) are formed on the driving vibration arms 24a, 24b, 25a and 25b.
The vibration gyro element 20 constitutes a detection vibration system that detects angular velocity by the detection vibration arms 22a and 22b, and the vibration arm gyro element 20 includes the connection arms 23a and 23b and the drive vibration arms 24a, 24b, 25a, and 25b. The drive vibration system which drives is comprised.

The vibrating gyro element 20 is disposed on the active surface 10a side of the silicon substrate 10 so as to overlap the silicon substrate 10 in plan view.
The vibrating gyro element 20 has the base 21 and the front and back surfaces of each vibrating arm as main surfaces. Here, a surface electrically connected to the outside in the base 21 is referred to as one main surface 20a, and a surface facing the one main surface 20a is referred to as the other main surface 20b.

On one main surface 20a of each of the support portions 19a and 19b of the vibrating gyro element 20, lead electrodes (not shown in FIG. 1) as connection electrodes drawn from the detection electrodes and drive electrodes are formed. Each lead electrode and the corresponding external connection terminal 12 of the silicon substrate 10 are electrically and mechanically connected.
Thereby, the vibrating gyro element 20 is held on the silicon substrate 10.

Next, the silicon substrate 10 as a semiconductor substrate will be described with reference to the drawings.
On the silicon substrate 10, an integrated circuit (not shown) configured to include semiconductor elements such as transistors and memory elements is formed on the active surface 10a side. This integrated circuit includes a drive circuit for driving and vibrating the vibrating gyro element 20 and a detection circuit for detecting a detected vibration generated in the vibrating gyro element 20 when an angular velocity is applied.
As shown in FIGS. 2 and 3, the silicon substrate 10 is electrically connected to a plurality of first electrodes 11a to 11f provided on the active surface 10a side and to the first electrodes 11a to 11f. External connection terminals 12a to 12f provided on the surface 10a side, a stress relaxation layer 15 provided between the active surface 10a and the external connection terminals 12a to 12f, and a connection terminal 13 provided on the active surface 10a side And.

  The first electrodes 11 a to 11 f are formed by being directly conducted to the integrated circuit of the silicon substrate 10. In addition, a first insulating layer 14 serving as a passivation film is formed on the active surface 10 a, and an opening is formed on the first electrode 11 in the first insulating layer 14. As a result, the first electrodes 11 a to 11 f are exposed to the outside in the opening of the first insulating layer 14.

On the first insulating layer 14, a stress relaxation layer 15 made of an insulating resin is formed at a position avoiding the first electrodes 11 a to 11 f and other electrodes, in this embodiment, at the center of the silicon substrate 10. .
In addition, the first electrodes 11a to 11f are connected to wirings 16a to 16f as a part of the rearrangement wiring in the opening of the first insulating layer 14, respectively, and a part of them (in FIG. 2A) The wirings 16b to 16f) are drawn on the first insulating layer 14.
On the stress relaxation layer 15, wirings 36 a to 36 f are formed as part of the rearrangement wiring corresponding to the wirings 16 a to 16 f on the active surface 10 a, and lead electrodes as connection electrodes of the vibration gyro element 20 are formed. The sensor elements are connected to sensor element connection terminals 37 to 37f as a part of rearrangement wiring provided at positions where 29a to 29d are arranged.
Each of the wirings 16a to 16f on the active surface 10a and the corresponding wirings 36a to 36f on the stress relaxation layer 15 are interlayer wirings of the stress relaxation layer 15 and via holes (Via hole) as part of the rearrangement wirings. ) 30a to 30f.
The rearrangement wiring composed of the wirings 16a to 16f, the wirings 36a to 36f, the sensor element connection terminals 37a to 37f, and the via holes 30a to 30f is for rearranging the electrodes of the integrated circuit. It is formed by being routed from the first electrodes 11a to 11f arranged in a predetermined portion to the stress relaxation layer 15. With such rearrangement wiring, the positions of the external connection terminals 12a to 12f used for connection with the vibration gyro element 20 are arbitrarily shifted with respect to the first electrodes 11a to 11f whose positional restrictions are large due to fine design. This is an important component for increasing the degree of freedom of the connection position of the silicon substrate 10 with the vibrating gyro element 20.

  Here, via holes 30a to 30f as interlayer wirings for connecting the wirings 16a to 16f on the active surface 10a and the corresponding wirings 36a to 36f on the stress relaxation layer 15 are connected to the external connection terminals 12a to 12d and the vibration gyroscope. It is arranged outside the junction region with the lead electrodes 29 a to 29 d as the connection electrodes of the element 20.

Further, on the active surface 10 a side of the silicon substrate 10, a second heat resistant second made of resin covers the wirings 36 a to 36 f and part of the sensor element connection terminals 37 a to 37 f, the stress relaxation layer 15, and the first insulating layer 14. An insulating layer 17 is formed. The second insulating layer 17 may be a solder resist.
In the second insulating layer 17, an opening is formed on the wiring 16 on the stress relaxation layer 15. In the present embodiment value, sensor element connection terminals 37 a to 37 f are formed by the openings of the second insulating layer 17.

The external connection terminals 12a to 12f are disposed on the sensor element connection terminals 37a to 37f exposed in the opening. The external connection terminals 12a to 12f are, for example, protruding electrodes formed by Au stud bumps. The external connection terminals 12a to 12f can be formed of other conductive materials such as copper, aluminum, or solder balls in addition to the Au stud bumps.
Under such a configuration, the integrated circuit formed on the silicon substrate 10 includes first electrodes 11a to 11f, wirings 16a to 16f, via holes 30a to 30f, wirings 36a to 36f, and sensor element connection terminals 37a to 37f. In addition, the vibration gyro element 20 is electrically connected via the external connection terminals 12a to 12f.
At this time, in the sensor device 1, since the external connection terminal 12 is a protruding electrode, a gap is provided between the vibration gyro element 20 and the silicon substrate 10.

  In addition to the first electrode 11, other electrodes (not shown) are formed on the integrated circuit formed on the silicon substrate 10. Similar to the case of the first electrode 11, the other electrode is connected to the rearrangement wiring, and is connected to the connection terminal 13 exposed to the outside in the opening of the second insulating layer 17. The connection terminal 13 has a pad shape for electrical or mechanical connection.

The first electrodes 11a to 11f, other electrodes, or the connection terminals 13 are formed of titanium (Ti), titanium nitride (TiN), aluminum (Al), copper (Cu), or an alloy containing these. Has been. In particular, the connection terminal 13 is preferably plated with nickel (Ni) or gold (Au) on the surface in order to improve the bondability during wire bonding.
By doing in this way, especially the fall of the contact property and joining property by rust can be prevented. Further, the outermost surface treatment such as solder plating or solder pre-coating may be performed.

Further, the rearrangement wirings such as the wirings 16a to 16f, the via holes 30a to 30f, the wirings 36a to 36f, and the sensor element connection terminals 37a to 37f are gold (Au), copper (Cu), silver (Ag), titanium (Ti). , Tungsten (W), titanium tungsten (TiW), titanium nitride (TiN), nickel (Ni), nickel vanadium (NiV), chromium (Cr), aluminum (Al), palladium (Pd), and the like. Among these, the via holes 30a to 30f form through holes between both main surfaces of the stress relaxation layer 15 (the surface on the active surface 10a side of the silicon substrate 10 and the surface on the vibrating gyro element 20 side). It can be formed by forming a conductor film (conductor layer) of the above-described metal or the like on the inner wall by plating, vapor deposition or sputtering, or by embedding a conductive member.
The wirings 16a to 16f, the via holes 30a to 30f, the wirings 36a to 36f, the sensor element connection terminals 37a to 37f, and the like are rearranged wirings, not only a single layer structure using the above materials but also a combination of a plurality of types of the above materials. A laminated structure may also be used. Note that the rearrangement wirings such as the wirings 16a to 16f, the wirings 36a to 36f, and the sensor element connection terminals 37a to 37f are usually formed in the same process, and thus are made of the same material.

Examples of the resin for forming the first insulating layer 14 and the second insulating layer 17 include a polyimide resin, a silicone-modified polyimide resin, an epoxy resin, a silicone-modified epoxy resin, an acrylic resin, a phenol resin, BCB (benzocyclobutene), and PBO (polybenzoxole) or the like is used.
The first insulating layer 14 can also be formed of an inorganic insulating material such as silicon oxide (SiO ₂₎ or silicon nitride (Si ₃ N ₄ ).
The stress relaxation layer 15 may also be formed on the outer peripheral portion of the silicon substrate 10 on which the connection terminals 13 are formed.

Here, the operation of the vibration gyro element 20 of the sensor device 1 will be described.
4 and 5 are schematic plan views for explaining the operation of the vibrating gyro element. FIG. 4 shows a driving vibration state, and FIGS. 5A and 5B show a detected vibration state in a state where an angular velocity is applied.
In FIGS. 4 and 5, each vibrating arm is represented by a line in order to simply express the vibration state.

In FIG. 4, the drive vibration state of the vibration gyro element 20 will be described.
First, when a driving signal is applied from an integrated circuit (driving circuit) of the silicon substrate 10, the vibrating arms 24a, 24b, 25a, and 25b are indicated by an arrow E in a state where the angular velocity is not applied to the vibrating gyro element 20. Bend vibration in the direction. In this bending vibration, a vibration state indicated by a solid line and a vibration state indicated by a two-dot chain line are repeated at a predetermined frequency.

Next, when the angular velocity ω about the Z-axis is applied to the vibrating gyro element 20 in the state where the driving vibration is performed, the vibrating gyro element 20 performs vibration as shown in FIG.
First, as shown in FIG. 5A, the Coriolis force in the direction of arrow B acts on the driving vibrating arms 24a, 24b, 25a, 25b and the connecting arms 23a, 23b constituting the driving vibration system. At the same time, the detection vibrating arms 22a and 22b are deformed in the arrow C direction in response to the Coriolis force in the arrow B direction.

Thereafter, as shown in FIG. 5 (b), a driving force is applied to the driving vibrating arms 24a, 24b, 25a, 25b and the connecting arms 23a, 23b in the direction of the arrow B ′. At the same time, the detection vibrating arms 22a and 22b are deformed in the direction of the arrow C 'in response to the force in the direction of the arrow B'.
The vibration gyro element 20 repeats this series of operations alternately to excite new vibration.
The vibrations in the directions of arrows B and B ′ are vibrations in the circumferential direction with respect to the center of gravity G. In the vibrating gyro element 20, the angular velocity is obtained by the detection electrode formed on the vibrating arms for detection 22a and 22b detecting the distortion of the crystal generated by the vibration.

(Second Embodiment)
[Gyro sensor]
Next, a motion sensor equipped with the sensor device 1 will be described with reference to the drawings.
6A and 6B are schematic views showing a gyro sensor as a motion sensor using the sensor device of the first embodiment, wherein FIG. 6A is a plan view seen from above, and FIG. 6B is A in FIG. FIG.
FIG. 6 is a schematic diagram illustrating a schematic configuration of a gyro sensor as a motion sensor according to the third embodiment. 6A is a plan view seen from the cap (lid) side (upper side), and FIG. 6B is a cross-sectional view taken along the line AA of FIG. 6A.
In the plan view, the cap is omitted for convenience of explaining the internal structure of the gyro sensor, and only the mounting position of the cap is shown. In the cross-sectional view, some parts are omitted and simplified in order to avoid complexity.
In addition, portions common to the configuration of the sensor device 1 described in the first embodiment are denoted by the same reference numerals, description thereof will be omitted, and description will be focused on the characteristic form of the gyro sensor.

  As shown in FIG. 6, the gyro sensor 3 as a motion sensor includes three sensor devices, and a package 70 including a package base 72 and a cap 73 that house each sensor device, and each sensor device 1A. ˜1C is arranged and stored inside the package 70. In addition, sensor device 1A-1C is a thing of the same structure as the sensor device 1 of 1st Embodiment.

The package 70 includes a package base 72 having a recess 71 and a cap 73 that covers the recess 71. Note that since the cap 73 is used for the lid of the gyro sensor package 70 of the present embodiment, the package base 72 does not have to have a recess, and a flat package base can be used. .
As the package base 72, for example, an aluminum oxide sintered body obtained by forming, laminating and firing ceramic green sheets is used. The cap 73 is made of metal such as Kovar or ceramic.

The sensor device 1A includes a package 70 such that one main surface 20a or the other main surface 20b of the vibration gyro element 20 and a bottom surface 74 as a connected surface connected to an external member of the package 70 are substantially parallel to each other. It is arranged and stored inside.
More specifically, the sensor device 1A is horizontally adhered and fixed to an inner bottom surface 75 parallel to the bottom surface 74 of the package base 72 with an adhesive (not shown) or the like, and the connection terminal 13 of the silicon substrate 10 and the package base 72 are fixed. A corresponding internal electrode 76 provided on the inner bottom surface 75 is bonded by a bonding member such as a bonding wire 40, for example. Thereby, the sensor device 1 is electrically connected to the internal electrode 76a.

  In two sensor devices 1B and 1C different from the sensor device 1A, an angle θ1 formed by one main surface 20a or the other main surface 20b of each vibration gyro element 20 is substantially perpendicular, and each vibration gyro element 20 An angle θ2 (not shown) formed by one main surface 20a or the other main surface 20b of the sensor and one main surface 20a or the other main surface 20b of the vibration gyro element 20 of the sensor device 1A is substantially perpendicular. The package 70 is arranged and stored.

Specifically, the two sensor devices 1 </ b> B and 1 </ b> C are fixed in the package 70 via a vertical holding substrate 45 that can be fixed vertically to the inner bottom surface 75 of the package base 72. That is, the two sensor devices 1B and 1C are fixed to the vertical holding substrate 45 by a bonding member (not shown) such as an adhesive, and one end side of the active surface 10a of the silicon substrate 10 (the end side which is the upper side in the package 70). ) And the internal electrode 76a of the vertical holding substrate 45 are connected by a bonding member such as a bonding wire 40, for example, and the other end side of the silicon substrate 10 (the package base 72 in the package 70). The connection terminal 13 disposed on the inner bottom surface 75 side (lower side) of the substrate and the internal electrode 76 disposed on the inner bottom surface 75 of the package base 72 include, for example, copper having a metallized surface. The lead 34 is made of a conductive material such as solder and is connected by a bonding member (not shown).
As a result, one end 34 of the sensor device 1B is fixed to the internal electrode 76b arranged in the same direction as the internal electrode 76a on the inner bottom surface 75 of the package base 72 by the joining member 51, and the other sensor device In 1C, the electrodes are fixed to the internal electrodes 76c arranged in a direction orthogonal to the direction in which the internal electrodes 76a are arranged. Although not shown, connection means for electrically connecting each vertical holding substrate 45 on which the two sensor devices 1B and 1C are mounted and the package base 72 may be provided.
Thus, the two sensor devices 1B and 1C are arranged on the inner bottom surface 75 of the package base 72 like the sensor device 1A, and are electrically connected to the internal electrodes 76b and 76c. Angles θ1 and θ2 formed by one main surface 20a or the other main surface 20b of each vibration gyro element 20 are substantially perpendicular.
Note that the above-described method for connecting and fixing the two sensor devices 1B and 1C is for explaining an embodiment, and the present invention is not limited to this. If the angles θ1 and θ2 formed by the principal surfaces of the vibration gyro elements 20 of the two sensor devices 1B and 1C can be fixed in a substantially right angle state, the sensor devices 1B and 1C are directly joined to the package base 72 and the cap 73, for example. It is good.

On the bottom surface 74 of the package base 72, a plurality of external terminals 74a used when mounted on an external device (external member) or the like is formed.
The internal electrodes 76a, 76b, and 76c are connected to the external terminal 74a and the like by internal wiring (not shown).
Thereby, as for the gyro sensor 3, the external terminal 74a, each internal electrode, and each sensor device 1A-1C are electrically connected mutually.
The external terminal 74a and each internal electrode are made of a metal film in which a film made of nickel (Ni), gold (Au) or the like is laminated on a metallized layer such as tungsten (W) by plating or the like.

The gyro sensor 3 is a package in which each of the sensor devices 1A to 1C is arranged and housed in the package base 72 as described above, and the cap 73 is joined by a joining member (not shown) such as a seam ring or low-melting glass. Bonded to the base 72.
Thereby, the inside of the package 70 is hermetically sealed. Note that the inside of the package 70 is preferably maintained in a vacuum state (a high degree of vacuum) so that the vibration of the vibration gyro element 20 of each sensor device is not hindered.

Here, an outline of the operation of the gyro sensor 3 will be described.
Here, the bottom surface 74 of the package 70 (package base 72) is parallel to the X ′ axis, the Y ′ axis, and the Z ′ axis, which are three axes orthogonal to each other, parallel to the X ′ axis and the Y ′ axis, and Z ′. It shall be orthogonal to the axis.
As a result, when the attitude of the gyro sensor 3 changes due to an external force or the like and an angular velocity is applied, the one main surface 20a or the other main surface 20b of the vibration gyro element 20 and the bottom surface 74 of the package 70 become substantially parallel. Thus, in the sensor device 1 housed in the package 70, the one main surface 20a or the other main surface 20b of the vibration gyro element 20 and the Z ′ axis are substantially orthogonal to each other, Detect angular velocity.

  On the other hand, the angle θ1 formed by one main surface 20a or the other main surface 20b of each vibration gyro element 20 is substantially a right angle, and one main surface 20a or the other main surface 20b of each vibration gyro element 20 and the sensor. The two sensor devices 1B and 1C housed in the package 70 are arranged so that an angle θ2 formed with one main surface 20a or the other main surface 20b of the vibration gyro element 20 of the device 1 is substantially a right angle. One of the principal surfaces 20a or the other principal surface 20b of the vibrating gyro element 20 and the X ′ axis are substantially orthogonal to each other, so that the angular velocity with respect to the X ′ axis is detected, and the other is the vibration gyro element 20. Since one main surface 20a or the other main surface 20b is substantially orthogonal to the Y ′ axis, the angular velocity with respect to the Y ′ axis is detected.

Thus, the gyro sensor 3 can detect the angular velocities with respect to the X ′ axis, the Y ′ axis, and the Z ′ axis, which are three axes orthogonal to each other, by one.
Therefore, the gyro sensor 3 is used for camera shake correction of an imaging device, vehicle attitude detection, attitude control, and the like in a mobile navigation system using GPS (Global Positioning System) satellite signals.

  As described above, since the gyro sensor 3 according to the second embodiment includes the plurality of sensor devices 1 according to the first embodiment, the gyro including the sensor device that achieves the same effect as that of the first embodiment. Can provide sensor.

Further, the gyro sensor 3 includes three sensor devices, and the packages 70 are arranged such that the angles θ1 and θ2 formed by one main surface 20a or the other main surface 20b of each vibration gyro element 20 are substantially perpendicular. Is housed inside.
Therefore, the gyro sensor 3 can provide a gyro sensor that can perform sensing corresponding to three axes orthogonal to each other.
In addition, the gyro sensor 3 determines the three axes from the Z ′ axis substantially orthogonal to the bottom surface 74 of the package 70 and the X ′ axis and Y ′ axis substantially parallel to the bottom surface 74 of the package 70 and orthogonal to each other. Can be.

The gyro sensor 3 fixes both ends of the lead 34 of the sensor device 1 to an inner bottom surface 75 substantially parallel to the bottom surface 74 of the package 70, and the bent leads of the sensor devices 1B and 1C are fixed to the same inner bottom surface 75. 34 is fixed to the internal electrode 76b and the internal electrode 76c in which the arrangement directions are orthogonal to each other, whereby the angle formed by one main surface 20a or the other main surface 20b of the vibration gyro element 20 of each sensor device. θ1 and θ2 can be substantially perpendicular.
As a result, the gyro sensor 3 changes the attitude of the package 70 for each sensor device when mounting each sensor device, as compared with the case where the three sensor devices 1 are arranged and fixed on each surface inside the package 70. Since the work such as can be abolished, mounting man-hours can be reduced.

In addition, since the gyro sensor 3 can mount each sensor device on the inner bottom surface 75 that is the same surface inside the package 70, each gyro sensor 3 has each sensor device 1 compared to the case where the three sensor devices 1 are mounted on each surface inside the package 70. Variations in the angles θ1 and θ2 formed by one main surface 20a or the other main surface 20b of the vibration gyro element 20 of the sensor device do not depend on the processing accuracy of the package 70.
Therefore, the gyro sensor 3 does not need to improve the processing accuracy such as the angle between the surfaces of the package 70, and can easily provide a gyro sensor corresponding to three axes.

  The sensor device described in the above embodiment can be implemented as the following modifications.

Hereinafter, modified examples of the rearrangement wiring in the sensor device 1 of the first embodiment will be described.
(Modification 1)
FIG. 7 is a plan view schematically illustrating a silicon substrate on which a stress relaxation structure has been applied, viewed from above, illustrating a first modification of the relocation wiring of the stress relaxation structure in the sensor device. In addition, about the common part with the said 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different part from the said 1st Embodiment.

In the silicon substrate 10 ′ of this modification shown in FIG. 7, the basic configuration of the rearrangement wiring is the same as that of the silicon substrate 10 of the above embodiment. That is, in the silicon substrate 10 ′, the first electrodes 11 a to 11 f provided on the active surface 10 a are connected to the wirings 16 a to 16 f (see FIG. 2A), the via holes 30 a to 30 f, and the wirings 136 a to 136 f, respectively. The sensor element connection terminals 37a to 37f on the stress relaxation layer 15 are rearranged.
Here, the arrangement of the via holes 30a to 30f on the stress relaxation layer 15 and the sensor element connection terminals 37a to 37f in plan view is the same as that of the silicon substrate 10 of the above embodiment, but in the above embodiment, the via hole 30a. To 30f and the sensor element connection terminals 37a to 37f are connected in the shortest distance with a straight line (see FIG. 2B), the wirings 36a to 36f are connected to the sensor element connection terminals 37a to 37f. Wirings 136a to 136f that connect the via holes 30a to 30f and the sensor element connection terminals 37a to 37f are provided to meander on the stress relaxation layer 15.

In this configuration, the external connection terminals 12a to 12f are arranged on the sensor element connection terminals 37a to 37f, and are used for connection to the extraction electrodes 29a to 29f as the connection electrodes of the vibration gyro element 20 (FIGS. 1 and 3). See). Here, as in the configuration described above, the wirings 136a to 136f that connect the sensor element connection terminals 37a to 37f and the via holes 30a to 30f are provided meandering, thereby providing the external connection terminals 12a to 12f and the lead electrodes 29a to 29f. The lengths of the interconnections 136a to 136f between the junction region and the via holes 30a to 30f are increased. Thereby, it is possible to suppress the force that restricts the elastic deformation of the stress relaxation layer 15 when stress is applied by the via hole from reaching the bonding region by the wiring. Therefore, the stress relaxation effect by the stress relaxation layer 15 can be ensured in the junction region (support portion) between the external connection terminals 12a to 12f and the extraction electrodes 29a to 29f.
The wiring 136a to 136f on the stress relaxation layer 15 has been described as meandering, but the wiring on the active surface 10a connected to these wirings 136a to 136f by the via holes 30a to 30f (FIG. 2A ), The wirings 16a to 16f may be provided meandering.

(Modification 2)
FIGS. 8A and 8B illustrate a second modification of the relocation wiring of the stress relaxation structure in the sensor device. FIG. 8A is a plan view of the silicon substrate viewed from above, and FIG. It is the top view which looked down at the made silicon substrate from the upper side. In addition, about the common part with the said 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different part from the said 1st Embodiment.

  In FIG. 8, the basic configuration of the rearrangement wiring of the silicon substrate 10B as the semiconductor substrate in the sensor device of the present modification is the same as that of the silicon substrate 10 of the above embodiment. The feature of the silicon substrate 10B of this modification is that in the rearrangement wiring, the via hole for conducting electrical connection between the wiring provided on the active surface 10a side and the wiring provided on the stress relaxation layer 15 is a silicon substrate in a plan view. It is the point arrange | positioned in the center of 10B.

  More specifically, among the first electrodes 11a to 11f provided on the active surface 10a on the peripheral edge of the silicon substrate 10B of the present modification, similarly to the silicon substrate 10 of the above embodiment, the first electrodes 11c to 11f. The wirings 216c to 216d are led out from 11f toward the center of the active surface 10a. In addition, via holes 130c to 130d are formed on the stress relaxation layer 15 from the ends of the wirings 216c to 216f on the center side of the active surface 10a. Then, wirings 236c to 236f are drawn out from the via holes 130c to 130d exposed on the stress relaxation layer 15 toward the peripheral edge of the silicon substrate 10B, and the sensor elements are arranged almost immediately above the first electrodes 11c to 11f. The connection terminals 237c to 237f are connected.

  Further, in the silicon substrate 10B of this modification, a wiring 216g is drawn from one of the connection terminals 13 of the active surface 10a toward the center of the active surface 10a, and the end of the wiring 216g on the center side of the active surface 10a A via hole 130g is formed on the stress relaxation layer 15 from the portion, and wirings 236a and 236b are led out from the via hole 130g exposed on the stress relaxation layer 15 toward the peripheral edge of the silicon substrate 10B. It is connected to sensor element connection terminals 237a and 237b which are arranged almost immediately above 11a and 11b. Here, the connection terminal 13 can be, for example, a ground electrode.

  In the configuration of this modification, when the first electrodes 11a to 11f are disposed in the vicinity of the peripheral portion of the silicon substrate 10B as a semiconductor substrate, a via hole as an in-layer wiring of the stress relaxation layer 15 in the rearrangement wiring. 130c to 130f are arranged near the center of the silicon substrate 10B. In this configuration, in particular, when the junction region between the external connection terminals 12a to 12f and the lead electrodes 29a to 29f as connection electrodes is located in the vicinity of the first electrodes 11a to 11f in plan view (FIGS. 1 and 3), the position from the junction region to the via holes 130c to 130f can be further separated. Further, since the lengths of the wirings 236a to 236f from the junction region to the via holes 130c to 130f can be increased, the stress relaxation effect by the stress relaxation layer 15 can be sufficiently obtained in the support portion of the vibration gyro element 20 as the sensor element. Can be secured.

(Modification 3)
FIGS. 9A and 9B illustrate a third modification of the relocation wiring of the stress relaxation structure in the sensor device. FIG. 9A is a plan view of the silicon substrate viewed from above, and FIG. It is the top view which looked down at the made silicon substrate from the upper side. In addition, about the common part with the said 1st Embodiment and the modification 2, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different part from the said 1st Embodiment.

In FIG. 9, the basic configuration of the rearrangement wiring of the silicon substrate 10B as the semiconductor substrate in the sensor device of this modification is the same as that of the silicon substrate 10 of the above embodiment and the silicon substrate 10B of the modification 2. . In particular, as in the silicon substrate 10B of the modified example 2, in the rearrangement wiring, the via hole for connecting the wiring provided on the active surface 10a side and the wiring provided on the stress relaxation layer 15 is seen in a plan view. The silicon substrate 10B in the state where the stress relaxation structure shown in FIG. 9B is applied is common to the silicon substrate 10B (FIG. 8B). ))).
The feature of this modification is that the first electrodes 81c to 81f are arranged in the vicinity of the center of the silicon substrate 10C on the active surface 10a of the silicon substrate 10C shown in FIG. 9A. In this way, the first electrodes 81c to 81f and the connection terminals 13 disposed in the vicinity of the center of the silicon substrate 10C are connected to the wirings 86c to 86g drawn on the active surface 10a and the wirings 86c to 86g. Via holes 130c to 130g penetrating on the upper surface of the stress relaxation layer 15 from the front end side near the center, and wirings 236a drawn from the via holes 130c to 130g exposed on the stress relaxation layer 15 to the vicinity of the peripheral edge of the silicon substrate 10C. Are rearranged on sensor element connection terminals 237a to 237f provided in the vicinity of the peripheral portion of the silicon substrate 10C.

  Even in the configuration of this modification, the stress caused by the stress relaxation layer 15 in the supporting portion of the sensor element is achieved by the rearrangement wiring in which the via holes 130c to 130g are disposed outside the bonding region between the silicon substrate 10C as the semiconductor substrate and the sensor element. A relaxation effect can be produced.

(Modification 4)
In the first embodiment and the first to third modifications, the sensor element connection terminals 37a to 37f and 137a to 137f are provided near the outer periphery of the active surface 10a of the silicon substrates 10, 10 ', 10B, and 10C as semiconductor substrates. , 237a to 237f have been described. That is, the vibration gyro element 20 (see FIGS. 1A and 4) as a sensor element having support portions 19a and 19b provided with lead electrodes 29a to 29f as connection electrodes at the peripheral edge of the element was used. The sensor device 1 has been described as an example. For example, even when a sensor element having a support portion at the center of the element is used, the rearrangement wiring structure of the present invention is effective in suppressing a decrease in sensitivity of the sensor device.
FIG. 10 illustrates a modification of a sensor element having a support portion at the center of the element and a silicon substrate as a semiconductor substrate on which the sensor element is mounted. FIG. 10A shows a support portion at the center of the element. The top view which illustrates typically the vibration gyro element as a sensor element which has this from the upper side, (b) is the top view which looked down at the silicon substrate from the upper side, (c) is the silicon substrate to which the stress relaxation structure was given It is the top view which looked down at from the upper side. In addition, about the common part with the said 1st Embodiment and a modification, the same code | symbol is attached | subjected and description is abbreviate | omitted.

First, the vibration gyro element 101 as a sensor element of this modification will be described.
In FIG. 10A, a vibrating gyro element 101 according to the present modification includes a support portion (base portion) 121 located at a central portion formed by etching a quartz crystal that is a piezoelectric material, and a Y axis from the support portion 121. A pair of detection vibrating arms 122a and 122b as vibration parts extended along the line and a pair of connections extended along the X axis from the support part 121 so as to be orthogonal to the detection vibration arms 122a and 122b Each pair of drive vibrating arms 124a as vibrating portions extended along the Y-axis from the distal ends of the connecting arms 123a and 123b so as to be parallel to the arms 123a and 123b and the detection vibrating arms 122a and 122b. , 124b, 125a, 125b.
Further, on one main surface (the main surface facing the silicon substrate 10B ′) of the support portion 121, a connection electrode that is drawn out from each detection electrode and each drive electrode and is used for electrical connection with the silicon substrate 10B ′. A lead electrode 112 is provided.

In the vibration gyro element 101, detection electrodes (not shown) are formed on the detection vibration arms 122a and 122b, and drive electrodes (not shown) are formed on the drive vibration arms 124a, 124b, 125a, and 125b. The vibration gyro element 101 constitutes a detection vibration system that detects angular velocity by the detection vibration arms 122a and 122b, and the vibration gyro element 20 includes the connection arms 123a and 123b and the drive vibration arms 124a, 124b, 125a, and 125b. The drive vibration system which drives is comprised.
Further, weight portions 126a and 126b are formed at the respective distal ends of the detection vibrating arms 122a and 122b, and weight portions 127a and 127b are formed at the respective distal ends of the driving vibrating arms 124a, 124b, 125a and 125b. , 128a, 128b are formed. Thereby, the vibration gyro element 101 is reduced in size and the detection sensitivity of the angular velocity is improved.

Next, the configuration of the silicon substrate 10B ′ as the semiconductor substrate and the rearrangement wiring of the silicon substrate 10B ′ will be described.
A silicon substrate 10B ′ according to this modification shown in FIG. 10B has the same configuration as the silicon substrate 10B according to Modification 2 (FIG. 8A). That is, in the silicon substrate 10B ′, the wirings 216c to 216d are led out from the first electrodes 11c to 11f provided on the peripheral portion of the active surface 10a toward the center of the active surface 10a, respectively. A wiring 216g is drawn from one of the connection terminals 13 toward the center of the active surface 10a.
Then, as shown in FIG. 10C, via holes 130c to 130d are provided on the stress relaxation layer 15 from the end of the wirings 216c to 216f on the center side of the active surface 10a, and the active surface 10a of the wiring 216g. A via hole 130g is formed on the stress relaxation layer 15 from the end on the center side.
The via holes 130c to 130d and 130g exposed on the stress relaxation layer 15, the sensor element connection terminals 87c to 87f and the sensor element connection terminals 87a and 87b disposed in the center of the silicon substrate 10B ′ are extremely short. The wirings 86c to 86f and the wirings 86a and 86b are electrically connected.

  The vibrating gyro element 101 shown in FIG. 10A is disposed on the active surface 10a side of the silicon substrate 10 so as to overlap the silicon substrate 10 shown in FIG. At this time, the lead electrode 112 as a connection electrode provided on one main surface of the support portion 121 of the vibration gyro element 101 and the corresponding sensor element connection terminals 87a to 87f of the silicon substrate 10B ′ are aligned, and the external It is electrically and mechanically connected via a connection terminal 12 (see FIGS. 1 and 4). Thereby, the vibrating gyro element 101 is held on the silicon substrate 10B ′.

In the fourth modification, the first electrodes 11a to 11f are arranged in the vicinity of the peripheral portion of the silicon substrate 10B ′ as the semiconductor substrate, and the lead as the connection electrode of the vibration gyro element 101 as the sensor element to be mounted is used. This is an example of the rearrangement wiring having the stress relaxation layer of the semiconductor substrate in the sensor device when the electrode 112 is disposed in the center of the silicon substrate 10B ′. According to this configuration, the first electrodes 11a to 10f and the via holes 130c to 130f and 130g are separated from each other in plan view in the stress relaxation layer 15 and the stress relaxation structure by the rearrangement wiring of the silicon substrate 10B ′ as the semiconductor substrate. Since the via holes 130c to 130f and 130g are arranged at the positions, the stress relaxation effect is not impaired. Therefore, by applying the silicon substrate 10B ′ having this stress relaxation structure to a sensor device, it is possible to contribute to the provision of a sensor device that can suppress a decrease in sensitivity due to an impact such as dropping or vibration.
In addition, in the silicon substrate 10B ′ of this modification, most of the rearrangement wiring is provided on the passivation film. With this configuration, a via hole is formed outside the junction region between the external connection terminals (12a to 12f, see FIGS. 1 and 3) and the connection electrodes (extraction electrodes 29a to 29f, see FIGS. 1 and 3). In the configuration of the rearrangement wiring according to the present invention, the entire length of the rearrangement wiring can be shortened.

(Third embodiment)
〔Electronics〕
Sensor comprising silicon substrate 10, 10 ', 10B, 10B', 10C as a semiconductor substrate having stress relaxation layer 15 and stress relaxation structure by rearrangement wiring as described in the first embodiment and modifications 1 to 4 The electronic device equipped with the device 1 and the gyro sensor as the motion sensor according to the second embodiment including the device 1 can be reduced in size and performance.
For example, FIG. 11A shows an application example to a digital video camera. The digital video camera 240 includes an image receiving unit 241, an operation unit 242, an audio input unit 243, and a display unit 1001. By mounting the sensor device 1 of the above embodiment or the gyro sensor 3 as a motion sensor on such a digital video camera 240, a so-called camera shake correction function can be mounted.
FIG. 11B shows an application example to a mobile phone as an electronic device, and FIG. 11C shows an application example to a personal digital assistant (PDA).
First, the cellular phone 3000 shown in FIG. 11B includes a plurality of operation buttons 3001, scroll buttons 3002, and a display unit 1002. By operating the scroll button 3002, the screen displayed on the display unit 1002 is scrolled.
A PDA 4000 shown in FIG. 11C includes a plurality of operation buttons 4001, a power switch 4002, and a display unit 1003. When the power switch 4002 is operated, various kinds of information such as an address book and a schedule book are displayed on the display unit 1003.
Various functions can be provided by mounting the gyro sensor as the sensor device or motion sensor of the above-described embodiment on such a cellular phone 3000 or PDA 4000. For example, when a camera function (not shown) is given to the mobile phone 3000 of FIG. 11B, camera shake correction can be performed by a sensor device or a gyro sensor mounted on the mobile phone 3000. In addition, when the mobile phone 3000 of FIG. 11B or the PDA 4000 of FIG. 11C is equipped with a global positioning system widely known as GPS (Global Positioning System), the sensor device and the motion sensor of the above-described embodiment. By mounting the gyro sensor as described above, the position and orientation of the mobile phone 3000 and the PDA 4000 can be recognized in the GPS.

  The electronic device shown in FIG. 11 is not limited to an electronic device to which the sensor device and the motion sensor of the present invention can be applied. A mobile computer, a car navigation device, an electronic notebook, a calculator, a workstation, a video phone, a POS terminal, a game Machine.

  Although the embodiments of the present invention made by the inventor have been specifically described above, the present invention is not limited to the above-described embodiments and modifications thereof, and various modifications can be made without departing from the spirit of the present invention. It is possible to make changes.

For example, in the above embodiment and the modification, the configuration in which the single stress relaxation layer 15 is provided on the silicon substrates 10, 10B, 10B ′, and 10C as the semiconductor substrate has been described. However, the present invention is not limited to this, and a configuration may be adopted in which a plurality of stress relaxation layers are provided and rearrangement wirings are formed between the plurality of stress relaxation layers.
According to this configuration, the wiring can be provided immediately above the electrode and the wiring via the plurality of stress relaxation layers, and the degree of freedom in designing the rearrangement wiring can be further increased.

In each of the above-described embodiments and modifications, the base material of the vibrating gyro element 20 is quartz, but is not limited to this. For example, lithium tantalate (LiTaO ₃ ), lithium tetraborate (Li ₂ B) ₄ O ₇ ), lithium niobate (LiNbO ₃ ), lead zirconate titanate (PZT), zinc oxide (ZnO), aluminum nitride (AlN) and other piezoelectric materials, or zinc oxide (ZnO), aluminum nitride (AlN) For example, silicon having a piezoelectric material such as a silicon film may be used.

In each of the above-described embodiments and modifications, the vibration gyro element 20 is given as an example of the sensor element of each sensor device. However, the present invention is not limited to this. It may be a pressure sensing element, a weight sensing element that reacts to weight, or the like.
In the second embodiment and the gyro sensor, the gyro sensor is taken as an example of the motion sensor. However, the present invention is not limited to this. For example, the acceleration sensor using the sensor device including the acceleration sensing element, the pressure sensing A pressure sensor using a sensor device including an element, a weight sensor using a sensor device including a weight sensing element, or the like may be used.

  DESCRIPTION OF SYMBOLS 1,1A, 1B, 1C ... Sensor device, 3 ... Gyro sensor as motion sensor, 9a-9d ... Beam, 10, 10B, 10B, 10B ', 10C ... Silicon substrate as semiconductor substrate, 10a ... Active surface, 11a -11f, 81c-81f ... 1st electrode, 12a-12f ... external connection terminal, 13 ... connection terminal, 14 ... 1st insulating layer, 15 ... stress relaxation layer, 16a-16f, 36a-36f, 86c-86g , 136a to 136f, 216c to 216g, 236a to 236f ... wiring, 17 ... second insulating layer, 19a, 19b ... each support part, 20, 101 ... vibration gyro element as a sensor element, 20a ... one main surface, 20b ... other main surface, 21 ... base, 22a, 22b, 122a, 122b ... vibrating arm for detection, 23a, 23b, 123a, 123b Connecting arm, 24a, 24b, 25a, 25b, 124a, 124d, 125a, 125b... Vibration arm for driving, 26a, 26b, 27a, 27b, 28a, 28b, 126a, 126b, 127a, 127b, 128a, 128b. , 29a to 29f, 112 ... extraction electrodes as connection electrodes, 30a to 30f, 130c to 130g ... via holes, 37a to 37f, 87a to 87f, 237a to 237f ... sensor element connection terminals, 40 ... bonding wires, 45 ... vertical holding Substrate, 51 ... joining member, 70 ... package, 71 ... recess, 72 ... package base, 73 ... cap, 74 ... bottom surface, 74a ... external terminal, 75 ... inner bottom surface, 76, 76a to 76c ... internal electrode, 121 ... support Part (base part), 240... Digital video camera as electronic equipment, 3 000: Cellular phone as an electronic device, 4000: PDA as an electronic device.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
A sensor device according to an aspect of the present invention includes a semiconductor substrate including an integrated circuit, a first electrode provided on the semiconductor substrate and electrically connected to the integrated circuit, an external connection terminal, and the semiconductor substrate. And a stress relaxation layer provided between the external connection terminal and a through hole formed in the stress relaxation layer to electrically connect the first electrode and the external connection terminal. A conductive element and a sensor element having a connection electrode, wherein the sensor element is a sensor device held on the semiconductor substrate by connection between the connection electrode and the external connection terminal, The conductive member is disposed outside a bonding region between the external connection terminal and the connection electrode in a plan view of the semiconductor substrate, and the semiconductor substrate has a surface opposite to a surface on which the first electrode is positioned fixed. Face And wherein the door.

Claims (10)

A semiconductor substrate;
A first electrode provided on the active surface side of the semiconductor substrate;
An external connection terminal that is electrically connected to the first electrode via a rearrangement wiring and is provided on the active surface side;
A stress relaxation layer provided between the semiconductor substrate and the external connection terminal;
A connection terminal provided on the active surface side of the semiconductor substrate;
A sensor element including a base, a vibration part extended from the base, and a connection electrode;
The sensor element is a sensor device held on the semiconductor substrate by connection between the connection electrode and the external connection terminal,
The rearrangement wiring includes a via hole as an interlayer wiring of the stress relaxation layer, and the via hole is provided outside a bonding region between the external connection terminal and the connection electrode. . The sensor device according to claim 1.
The external connection terminal is a protruding electrode. The sensor device according to claim 1 or 2,
A part of the rearrangement wiring drawn from the first electrode meanders. In the sensor device according to any one of claims 1 to 3,
A passivation film is provided on the active surface of the semiconductor substrate;
The sensor device according to claim 1, wherein most of the rearrangement wiring except the via hole is provided on the passivation film. In the sensor device according to any one of claims 1 to 4,
The first electrode is disposed in the vicinity of a peripheral portion of the semiconductor substrate,
The sensor device, wherein the via hole is arranged above the vicinity of the center of the semiconductor substrate. In the sensor device according to any one of claims 1 to 5,
A sensor device, wherein a plurality of the stress relaxation layers and the relocation wirings are stacked. The sensor device according to any one of claims 1 to 6,
A package for housing the sensor device,
A motion sensor, wherein the sensor device is housed in the package. A plurality of sensor devices according to any one of claims 1 to 6;
A package for accommodating the plurality of sensor devices,
The motion sensor, wherein the plurality of sensor devices are arranged and housed in the package such that an angle formed between main surfaces of the sensor elements is substantially a right angle. The motion sensor according to claim 7 or 8,
The motion sensor according to claim 1, wherein a main surface of at least one of the sensor elements is substantially parallel to a connected surface connected to an external member of the package.   An electronic apparatus comprising the sensor device according to any one of claims 1 to 6 or the motion sensor according to any one of claims 7 to 9.

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